TW201706316A - 氟樹脂多孔質體、使用其之附金屬層的多孔質體及配線基板 - Google Patents
氟樹脂多孔質體、使用其之附金屬層的多孔質體及配線基板 Download PDFInfo
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- TW201706316A TW201706316A TW105119728A TW105119728A TW201706316A TW 201706316 A TW201706316 A TW 201706316A TW 105119728 A TW105119728 A TW 105119728A TW 105119728 A TW105119728 A TW 105119728A TW 201706316 A TW201706316 A TW 201706316A
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- fluororesin
- porous body
- dielectric constant
- metal layer
- relative dielectric
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Abstract
為了獲得屬於以往難以獲得之兼顧優異的低相對介電係數與低線膨脹係數之材料即氟樹脂多孔質體、使用其之附金屬層的多孔質體及配線基板，本發明乃提供一種氟樹脂多孔質體，其具備：氟樹脂基質；及空心無機粒子，其分散於該氟樹脂基質中；上述氟樹脂基質具有多數個空孔。
Description
本發明是有關於一種屬於以往難以獲得之兼顧優異的低相對介電係數與低線膨脹係數之材料即氟樹脂多孔質體、使用其之附金屬層的多孔質體及配線基板。
由於電子技術之發達，使用高頻寬之電腦或移動通信機器等電子機器正逐漸增加。一般而言，於此種電子機器中使用的高頻用配線基板乃要求低相對介電係數材料，舉例言之，低相對介電係數之樹脂材料可列舉如：聚乙烯、聚丙烯、聚苯乙烯、聚四氟乙烯等非極性之高分子樹脂材料。
然而，上述樹脂材料之線膨脹係數高，與形成於基板上之金屬配線材料之線膨脹係數大幅不同，因此，會有因線膨脹係數差所造成的配線之剝離、切斷等問題。
為了降低上述線膨脹係數，包括無機粉末之填充或玻璃布強化等利用線膨脹係數低之無機物之方法。另一方面，一般而言，無機物之相對介電係數高，因此，亦會
有所獲得材料之相對介電係數提高之問題。
故，目前揭示有一種技術，其使用粒子中心部分為空心之空心無機粒子，並製作屬於低相對介電係數同時線膨脹係數低之基板(專利文獻1)。
專利文獻1：日本特開平6-119810號公報
然而，即便使用該技術，最低之相對介電係數亦停留在1.94左右，於其他技術中，欲獲得相對介電係數低於此之材料亦非常困難，因此，長久以來期望更進一步之低相對介電係數化。
本發明乃有鑑於此種情形，並提供一種以往難以獲得之兼顧優異的低相對介電係數與低線膨脹係數之材料。
本發明之第1要旨是一種氟樹脂多孔質體，其具備：氟樹脂基質、及分散於該氟樹脂基質中的空心無機粒子；上述氟樹脂基質具有多數個空孔。
又，本發明之第2要旨是一種附金屬層的多孔質體，其於上述氟樹脂多孔質體之至少一面具有金屬層；第3要旨是一種配線基板，其係由該附金屬層的多孔質體之金
屬層進行圖形處理而成。
低相對介電係數與低線膨脹係數乃呈現取捨關係，欲兼顧低相對介電係數與低線膨脹係數是困難的，發明人乃著眼於上述長久以來之課題，目標是兼顧低相對介電係數與低線膨脹係數而專心研究。其結果，想起於有機/無機複合技術中控制材料之空孔率並反覆檢討時，發現以下氟樹脂多孔質體可兼顧原本呈現取捨關係之低相對介電係數與低線膨脹係數，即：具備氟樹脂基質及空心無機粒子，且上述氟樹脂基質具有多數個空孔。
本發明之氟樹脂多孔質體具備：氟樹脂基質、及分散於該氟樹脂基質中的空心無機粒子；上述氟樹脂基質具有多數個空孔，因此，可兼顧優異之低相對介電係數與低線膨脹係數。
又，若上述氟樹脂多孔質體於頻率10GHz之相對介電係數為1.6~1.9，則所獲得製品之精度會變得優異。
又，若上述氟樹脂多孔質體之線膨脹係數為40~60ppm/K，則所獲得製品之可靠性會變得優異。
若上述氟樹脂基質之空孔為揮發性添加劑之揮發痕跡，則工業生產性優異。
若上述氟樹脂基質之空孔之平均孔徑為10~1000nm，則低相對介電係數會更優異。
若上述空心無機粒子之耐壓強度為30MPa以上，則空心結構不易損壞，且低相對介電係數會更加優異。
若於上述氟樹脂多孔質體之至少一面具有金屬層，則可獲得低相對介電係數與低線膨脹係數優異且作為基板材料之附金屬層的多孔質體。
若將上述附金屬層的多孔質體之金屬層進行圖形處理，則可獲得可靠性優異之配線基板。
1‧‧‧氟樹脂基質
2‧‧‧空孔
3‧‧‧空心無機粒子
圖1是屬於本發明實施形態之一的氟樹脂多孔質體之截面圖。
圖2是屬於本發明實施形態之一的附金屬層的多孔質體之截面圖。
圖3是屬於本發明實施形態之一的配線基板之截面圖。
其次，詳細說明本發明之實施形態。不過，本發明並不限於該實施形態。
如圖1中例示，本發明之氟樹脂多孔質體具備：氟樹脂基質1、及分散於該氟樹脂基質1中的空心無機粒子3；上述氟樹脂基質1具有多數個空孔2。以下，依序說明各構造。
<氟樹脂基質>
於本發明中，構成氟樹脂基質之氟樹脂只要是含有氟原子之樹脂，則無特殊之限制，然而，若由降低系統全體之相對介電係數之觀點來看，則氟樹脂於頻率10GHz之相對介電係數宜為2.6以下。於本說明書中，所謂基質(Matrix)
是指分散保持空心無機粒子之母材。
舉例言之，此種相對介電係數為2.6以下之氟樹脂可列舉如：聚四氟乙烯(PTFE)、四氟乙烯．全氟烷基乙烯醚共聚物(PFE)、四氟乙烯．六氟丙烯共聚物(FEP)等。該等氟樹脂可單獨使用或併用2種以上。又，於上述氟樹脂中，在不會使相對介電係數大幅上升之範圍內，亦可混合使用其他樹脂。
又，氟樹脂與親水性表面之親和性低，且不易獲得與屬於無機物之空心無機粒子之接著性，因此，為了提升接著性，亦可使用樹脂之一部分或全部業經變性之氟樹脂。
在此，空孔只要是存在於氟樹脂基質中之空隙，則形狀可為球或是不定形，並無特殊之限制，然而，較為理想的是在藉由蝕刻將配線基板製作時之金屬層進行圖形處理時，若由防止蝕刻液穿透之觀點來看，則宜包含非貫通孔。
舉例言之，於上述氟樹脂基質開設空孔之方法可列舉如：藉由雷射等以物理方式開設空孔之方法；於氟樹脂中混合揮發性添加劑，並藉由使該揮發性添加劑揮發而形成空孔之方法，即，形成利用揮發性添加劑之揮發痕跡之空孔之方法等，特別是若由工業生產性優異之觀點來看，則形成利用揮發性添加劑之揮發痕跡之空孔之方法是較為理想的。
空孔之平均孔徑宜為10~1000nm，若由不降低氟
樹脂多孔質體之機械特性之觀點來看，則更宜為50~500nm。由於可期待防止鍍液滲入氟樹脂多孔質體中且無法配線加工之障礙效果，因此，平均孔徑宜小。
上述平均孔徑乃藉由利用掃描型電子顯微鏡(SEM)等之直接觀測，求取複數個空孔(100個)之孔徑，並將其平均值作成平均孔徑。
上述揮發性添加劑宜為對氟樹脂具有膨潤性且沸點為300℃以下之液體，舉例言之，可列舉如：聚乙二醇、酯、異烷烴系碳氫化合物、己烷等低分子量之碳氫化合物，特別是宜為異烷烴系碳氫化合物。該等揮發性添加劑可單獨使用或併用2種以上。
揮發性添加劑之摻合量宜相對於氟樹脂100重量份為30~150重量份，更宜為80~120重量份。若揮發性添加劑摻合量過少，則空孔率減小，並有相對介電係數無法充分減小之傾向，若過多，則會有產生製造上之問題之傾向。
若由基質中的空孔分散性之觀點來看，則基質中的空孔率宜為5%以上，更宜為10%以上，特別是20%以上(通常為90%以下)。
<空心無機粒子>
其次，說明構成本發明之氟樹脂多孔質體之空心無機粒子。
所謂空心無機粒子是指粒子中心部具有空心結構之低相對介電係數之無機粒子。舉例言之，空心無機粒子之材質可列舉如：玻璃、二氧化矽、陶瓷、氧化鋯、該等之混
合物等，其中，若由低相對介電係數之觀點來看，則宜為玻璃。該等空心無機粒子可單獨使用或併用2種以上。
空心無機粒子於頻率10GHz之相對介電係數宜為1.9以下，更宜為1.7以下。若上述相對介電係數過高，則所獲得多孔質體之相對介電係數提高，並有不易獲得所期望之低相對介電係數之傾向。
空心無機粒子之耐壓強度宜為30MPa以上，更宜為35MPa以上，特別是100MPa以上。若上述耐壓強度過低，則於製造中發生空心無機粒子之破裂，並有空心結構損壞之傾向。若空心結構損壞，則系統全體之相對介電係數提高，無法獲得所期望之相對介電係數。
另一方面，上述耐壓強度之上限通常為200MPa，且宜為190MPa以下。若提高耐壓強度，則空心結構之壁面厚度變厚，因此，包含於空心結構中的空氣量減少，並有不易獲得所期望之低相對介電係數之傾向。
耐壓強度乃藉由ASTM D 3102-78來定義，於甘油中適量加入空心無機粒子並加壓，並將空心無機粒子破碎且體積減少10%之壓力作成耐壓強度。
若由低相對介電係數化之觀點來看，則空心無機粒子之中值粒徑(d50)宜為10μm以上。中值粒徑之上限通常為70μm。若中值粒徑過大，則會有空心結構容易損壞之傾向。上述中值粒徑之測定可使用雷射繞射、散射式粒子徑分布測定裝置來測定。
若由所獲得材料之低相對介電係數化之觀點來
看，則空心無機粒子中的無機量宜為10~30體積%，更宜為15~25體積%。
若由提高氟樹脂與空心無機粒子之密接性並抑制線膨脹係數之觀點來看，則宜於空心無機粒子表面預先進行耦合處理或氟處理。
若由容易將空心無機粒子進行表面修飾之觀點來看，則上述耦合處理中使用的耦合劑更宜為鈦耦合劑、矽烷耦合劑等，特別是若由更容易與空心無機粒子反應之觀點來看，則宜為矽烷耦合劑。該等耦合劑可單獨使用或併用2種以上。
又，上述氟處理是指使用液狀、粒子狀等之氟樹脂而將空心無機粒子進行表面處理。於空心無機粒子與含氟化合物間，宜產生化學相互作用及化學鍵結中之至少一者。
空心無機粒子亦可進行調製，然而，亦可利用市售品。舉例言之，空心無機粒子市售的有：空心玻璃微小球及空心陶瓷微小球、二氧化矽微小球、硼矽酸鹽微小球等，其中，宜為空心玻璃微小球及空心陶瓷微小球，再者，空心玻璃微小球適合於本發明中使用。該等空心無機粒子可單獨使用或併用2種以上。
舉例言之，代表性市售品可列舉如：3M公司製「iM16K」、「iM30K」、「S60HS」、「VS5500」等、康寧玻璃廠(Corning Glass Works)公司製「Corning VYCOR 7930」、愛瑪森康明(Emerson&Cuming)公司製「SI Eccosphere」、哈
比森沃克(Harbison-Walker)公司製「GP-7I」等。
空心無機粒子之含量宜為所獲得氟樹脂多孔質體之40~80體積%，更宜為50~70體積%。若上述含量過少，則會有相對介電係數無法充分降低之傾向，另一方面，若過多，則會有薄片化等成形困難之傾向。
於本發明中，在無損本發明之氟樹脂多孔質體之物性範圍內，亦可含有輔助成分作為任意成分。
<氟樹脂多孔質體>
其次，說明製造本發明之氟樹脂多孔質體之方法理想之一例。
舉例言之，本發明之氟樹脂多孔質體之製造方法具備：(I)混合含有氟樹脂、空心無機粒子及揮發性添加劑之組成物並調製糊之步驟；(II)將上述糊壓延成形之步驟；及(III)除去上述揮發性添加劑之步驟。
藉此，可獲得圖1所示之氟樹脂多孔質體，其於氟樹脂基質1中分散有空心無機粒子3，同時形成複數個空孔2。
於步驟(I)之糊調製中，當混合含有氟樹脂、空心無機粒子及揮發性添加劑之組成物時，該組成物的意思是除了僅由氟樹脂、空心無機粒子及揮發性添加劑所構成之情形外，亦包括組合氟樹脂、空心無機粒子及揮發性添加劑與其他輔助成分之情形。
其次，於步驟(II)中，製作最終作為目標之厚度
(例如0.1~2mm左右之厚度)之成形體，然後，於步驟(III)中除去揮發性添加劑，藉此，可獲得本發明之氟樹脂多孔質體。於步驟(III)中揮發性添加劑之除去可遵循按照所使用揮發性添加劑適當地選自於公知方法之方法來實施，其中，宜將壓延所獲得的薄片狀物(有時稱作「薄膜狀物」)加熱而使揮發性添加劑揮發。
於上述步驟(III)中，宜藉由PTFE之焙燒溫度範圍內之溫度(例如300~500℃)燒結。
又，製造附金屬層的多孔質體時，乃具有於藉由上述步驟(I)~(III)所獲得氟樹脂多孔質體之至少一面設置金屬層之步驟(IV)(參照圖2，另，圖2乃於氟樹脂多孔質體之上下兩面設置金屬層)。再者，製造配線基板時，乃具有將上述附金屬層的多孔質體之金屬層進行圖形處理之步驟(V)(參照圖3)。
舉例言之，上述步驟(IV)於氟樹脂多孔質體之至少一面設置金屬層之步驟可列舉如：黏合銅箔等金屬箔之方法；進行積層之方法；使用金屬物質而進行濺鍍或電鍍之方法等，其中，若由形成均一厚度之金屬層之觀點來看，則宜使用積層方法。
舉例言之，上述金屬層之金屬可列舉如：金、銀、鉑、銅、鋁及該等之合金等，其中，宜使用銅。該等金屬可單獨使用或併用2種以上。金屬層之厚度宜為5~50μm。
當氟樹脂多孔質體為薄片狀物時，金屬層可設置於薄片之單面或兩面。上述步驟(V)形成配線之圖形處理方
法可列舉如：使用光阻劑等的添加(Additive)法；或利用蝕刻之消去(Subtractive)法。
依上述作成而可獲得本發明之氟樹脂多孔質體，然而，氟樹脂多孔質體之製造方法並不限於上述。
本發明之氟樹脂多孔質體乃兼顧良好之低相對介電係數與低線膨脹係數。
具體而言，若由所獲得製品之精度之觀點來看，則氟樹脂多孔質體於頻率10GHz之相對介電係數宜為1.6~1.9，更宜為1.85以下，特別是1.70以下。上述相對介電係數乃將測定頻率作成10GHz，並藉由空腔共振器微擾法來求取。
又，若由所獲得製品之可靠性之觀點來看，則氟樹脂多孔質體之線膨脹係數宜為40~60ppm/K。上述線膨脹係數乃將30℃~100℃之平均線膨脹係數作成線膨脹係數，並藉由TMA(熱機械分析，Thermal Mechanical Analysis)法來求取。
本發明之氟樹脂多孔質體乃兼顧良好之低相對介電係數與低線膨脹係數，因此，於上述氟樹脂多孔質體之至少一面設置金屬層之附金屬層的多孔質體乃構成低相對介電係數與低線膨脹係數優異之基板材料。
又，將上述附金屬層的多孔質體之金屬層進行圖形處理之配線基板乃精度良好且可靠性優異，因此，本發明之配線基板可適當地使用在行動電話、電腦、天線等模組中。又，本發明之配線基板乃相對介電係數低，相對介電係數之誤差亦少，因此，檢測距離延伸，同時可提升精
度，故，可適當地使用在構成毫米波天線之高頻用配線基板中。
以下，列舉實施例及比較例，詳細說明本發明，然而，本發明並不限於該等實施例。
首先，於實施例及比較例前，準備下述原料成分。
(1)氟樹脂是準備PTFE粒子(大金(DAIKIN)工業公司製，POLYFLON PTFEF-104)。
(2)空心無機粒子
．空心無機粒子a是準備3M公司製之「Glass Bubbles iM30K」(相對介電係數1.9、耐壓強度186MPa)。
．空心無機粒子b是準備3M公司製之「Glass Bubbles iM16K」(相對介電係數1.7、耐壓強度110MPa)。
．空心無機粒子c是準備3M公司製之「Glass Bubbles VS5500」(相對介電係數1.5、耐壓強度38MPa)。
．空心無機粒子d是準備3M公司製之「Glass Bubbles K1」(相對介電係數1.2、耐壓強度1.7MPa)。
．空心無機粒子e(比較例1用)是準備二氧化矽微小球(愛瑪森康明(Emerson&Cuming)公司製「SDT-60 Eccosphere」)。
(3)揮發性添加劑是準備艾克森美孚(Exxon Mobil)公司製之「ISOPAR M」。
[實施例1~3、比較例1~2]
將上述各原料成分摻合、混合成構成後述表1所示之比
例，藉此，調製多孔質體組成物(糊)，於室溫(23℃)下將該糊進行壓延而形成150μm之薄片，並藉由400℃燒結該薄片而使揮發性添加劑揮發，並製作具有複數個空孔(平均孔徑100nm)之薄片狀氟樹脂多孔質體。
使用依此作成所獲得的各薄片，遵循後述所示之方法進行特性評價。於後述表1中一併顯示其結果。
<相對介電係數>
將測定頻率作成10GHz，並藉由空腔共振器微擾法，測定複介電係數，並將其實數部分(εr’)作成相對介電係數。使用相對介電係數測定裝置(安捷倫科技(Agilent Technologies)公司製「網路分析器N5230C」及關東電子應用開發公司製「空腔共振器10GHz」)，自各薄片切出薄長方形狀之試樣(試樣尺寸寬度2mm×長度70mm)並測定。
<線膨脹係數>
藉由TMA法，使用熱機械分析裝置(布魯克AXS(BRUKER AXS)公司製，「TMA4000SA」)，將30℃~100℃之薄片平面方向之平均線膨脹係數作成線膨脹係數(ppm/K)。
由上述結果可清楚明白，實施例1~3品項皆為可兼顧良好之低相對介電係數與低線膨脹係數之材料。又，製作業已於屬於該實施例1品項之氟樹脂多孔質體之薄片兩面形成銅箔(Cu層)之附金屬層的多孔質體(基板)，然後，藉由蝕刻，將該銅箔進行圖形處理，藉此，獲得配線基板。該配線基板乃使用可兼顧良好之低相對介電係數與低線膨脹係數之氟樹脂多孔質體，因此，可靠性優異，在將其使用於車輛用毫米波天線時，配線位置不會出毛病，可獲得檢測距離延伸之結果。
相對於此，比較例1品項並未於氟樹脂基質中具有多數個空孔，可得知即便是最低之相對介電係數，1.94亦成為界限。另，一面降低、抑制線膨脹係數，一面降低相對介電係數，且即便是0.01，在技術上亦屬困難，然而，
本實施例品項卻可將相對介電係數降低0.1左右或其以下，可得知能兼顧優異之低相對介電係數與低線膨脹係數。
比較例2品項乃未含有空心無機粒子之PTFE單體之薄片，雖然相對介電係數低，但線膨脹係數卻非常高，兩者通常呈現取捨關係，可得知不易兼顧低相對介電係數與低線膨脹係數。
於上述實施例中，乃顯示本發明之具體形態，然而，上述實施例不過是單純之例示而並非限定解釋。該發明所屬技術領域中具有通常知識者可清楚明白的各種變形應屬於本發明之範圍內。
本發明之氟樹脂多孔質體乃兼具優異之低相對介電係數與低線膨脹係數，因此，適合作為高頻用配線基板材料，並可適當地利用在車輛用毫米波天線中。
1‧‧‧氟樹脂基質
2‧‧‧空孔
3‧‧‧空心無機粒子
Claims (8)
- 一種氟樹脂多孔質體，其特徵在於具備：氟樹脂基質；及空心無機粒子，其分散於該氟樹脂基質中；並且上述氟樹脂基質具有多數個空孔。
- 如請求項1之氟樹脂多孔質體，其於頻率10GHz之相對介電係數為1.6~1.9。
- 如請求項1或2之氟樹脂多孔質體，其線膨脹係數為40~60ppm/K。
- 如請求項1或2之氟樹脂多孔質體，其中上述氟樹脂基質之空孔為揮發性添加劑之揮發痕跡。
- 如請求項1或2之氟樹脂多孔質體，其中上述氟樹脂基質之空孔之平均孔徑為10~1000nm。
- 如請求項1或2之氟樹脂多孔質體，其中上述空心無機粒子之耐壓強度為30MPa以上。
- 一種附金屬層的多孔質體，其於如請求項1至6中任一項之氟樹脂多孔質體之至少一面具有金屬層。
- 一種配線基板，其係由如請求項7之附金屬層的多孔質體之金屬層進行圖形處理而成。
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| JP2015150077A JP2017031256A (ja) | 2015-07-29 | 2015-07-29 | フッ素樹脂多孔質体、それを用いた金属層付多孔質体及び配線基板 |
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| EP (1) | EP3330313A1 (zh) |
| JP (1) | JP2017031256A (zh) |
| KR (1) | KR20180035798A (zh) |
| CN (1) | CN107849284A (zh) |
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| CN111052878A (zh) * | 2017-09-06 | 2020-04-21 | 日本皮拉工业株式会社 | 电路基板及其制造方法 |
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| CN107926110B (zh) * | 2015-08-21 | 2021-04-30 | 康宁股份有限公司 | 具有低介电性质的玻璃基材组装件 |
| CN108882515A (zh) * | 2018-09-21 | 2018-11-23 | 维沃移动通信有限公司 | 一种信号传输器件、信号传输器件的加工方法及移动终端 |
| WO2020213669A1 (ja) * | 2019-04-19 | 2020-10-22 | 日東電工株式会社 | 板状の複合材料 |
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| JPS6460648A (en) * | 1987-08-28 | 1989-03-07 | Junkosha Co Ltd | Low-permittivity composite material |
| JPH01225645A (ja) * | 1988-03-04 | 1989-09-08 | Junkosha Co Ltd | 低誘電率複合材料 |
| JPH06119810A (ja) * | 1990-02-21 | 1994-04-28 | Rogers Corp | 誘電複合体 |
| JP3198121B2 (ja) * | 1991-05-10 | 2001-08-13 | 株式会社潤工社 | 四フッ化エチレン樹脂発泡体及びその製造方法 |
| JP3195006B2 (ja) * | 1991-10-31 | 2001-08-06 | 株式会社潤工社 | 四フッ化エチレン樹脂発泡体及びその製造方法 |
| WO2004067638A1 (ja) * | 2003-01-28 | 2004-08-12 | Matsushita Electric Works, Ltd. | 中空粒子を含有する樹脂組成物、同組成物を含むプリプレグおよび積層板 |
| US7732531B2 (en) * | 2003-08-25 | 2010-06-08 | Daikin Industries, Ltd. | Molded object process for producing the same product for high-frequency signal transmission and high-frequency transmission cable |
| CN100543070C (zh) * | 2004-04-05 | 2009-09-23 | 积水化学工业株式会社 | 中空树脂微粒、有机·无机混合微粒及中空树脂微粒的制造方法 |
| EP1794221B1 (en) * | 2004-09-10 | 2016-02-03 | Jsp Corporation | Expanded polypropylene bead for forming a dielectric material and dielectric lens member formed by the expanded polypropylene beads |
| JP5306789B2 (ja) * | 2008-12-03 | 2013-10-02 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法 |
| CN103319742A (zh) * | 2009-05-01 | 2013-09-25 | 阿科玛股份有限公司 | 泡沫聚偏二氟乙烯结构 |
| CN102477166A (zh) * | 2011-09-28 | 2012-05-30 | 深圳光启高等理工研究院 | 一种超材料基板及其制备方法 |
| JPWO2014069477A1 (ja) * | 2012-10-31 | 2016-09-08 | 日本バルカー工業株式会社 | 圧電積層体 |
| KR20150037657A (ko) * | 2013-09-30 | 2015-04-08 | 주식회사 엘지화학 | 연성 금속 적층체 및 이의 제조 방법 |
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| CN111052878A (zh) * | 2017-09-06 | 2020-04-21 | 日本皮拉工业株式会社 | 电路基板及其制造方法 |
| CN111052878B (zh) * | 2017-09-06 | 2023-09-15 | 日本皮拉工业株式会社 | 电路基板及其制造方法 |
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| EP3330313A1 (en) | 2018-06-06 |
| CN107849284A (zh) | 2018-03-27 |
| WO2017018105A1 (ja) | 2017-02-02 |
| JP2017031256A (ja) | 2017-02-09 |
| KR20180035798A (ko) | 2018-04-06 |
| US20180200985A1 (en) | 2018-07-19 |
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