TW201704876A - Positive-tone photosensitive resin composition, dry film, cured product, and printed wiring board - Google Patents
Positive-tone photosensitive resin composition, dry film, cured product, and printed wiring board Download PDFInfo
- Publication number
- TW201704876A TW201704876A TW105107404A TW105107404A TW201704876A TW 201704876 A TW201704876 A TW 201704876A TW 105107404 A TW105107404 A TW 105107404A TW 105107404 A TW105107404 A TW 105107404A TW 201704876 A TW201704876 A TW 201704876A
- Authority
- TW
- Taiwan
- Prior art keywords
- photosensitive resin
- resin composition
- organic group
- group
- integer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
本發明係關於正型感光性樹脂組成物、乾式薄膜、硬化物及印刷配線板。 The present invention relates to a positive photosensitive resin composition, a dry film, a cured product, and a printed wiring board.
聚醯亞胺乃是基於高絕緣性、耐熱性、高機械強度等之優異的特性而廣泛地被應用於各種領域。例如,並不停滯於最初被應用的航空宇宙領域,現在也涉及於半導體元件之塗佈膜或可撓性印刷配線板、耐熱絕緣性層間材之適用上。 Polyimine is widely used in various fields based on excellent properties such as high insulation properties, heat resistance, and high mechanical strength. For example, it does not stagnate in the aerospace field that was originally applied, and is now also applied to a coating film of a semiconductor element, a flexible printed wiring board, or a heat-resistant insulating interlayer.
聚醯亞胺是熱可塑性,且對有機溶劑的溶解性差,所以有加工困難的一面。因此,聚醯亞胺乃是藉由下述手法而廣泛地被使用:在對摻合聚醯胺酸與光反應性之化合物所得之感光性樹脂組成物照射活性光線後,藉由顯像來形成所期望的圖型膜,之後施予高溫使其閉環而予以醯亞胺化。 Polyimine is thermoplastic and has poor solubility in organic solvents, so it is difficult to process. Therefore, polyimine is widely used by irradiating active light rays to a photosensitive resin composition obtained by mixing a poly-proline and a photoreactive compound, and then developing the image by irradiation. A desired pattern film is formed, and then a high temperature is applied to cause ring closure to be imidized.
例如,專利文獻1中記載著包含聚胺酸縮合物與醌二疊氮化合物之正型之感光性樹脂組成物,其中, 該聚胺酸縮合物係芳香族二酐與芳香族二胺之聚胺酸縮合物。又,專利文獻2中記載著包含特定構造之聚(醯胺-醯亞胺)樹脂與光酸產生劑之正型之感光性樹脂組成物。 For example, Patent Document 1 describes a positive photosensitive resin composition containing a polyamic acid condensate and a quinonediazide compound, wherein The polyamic acid condensate is a polyamine condensate of an aromatic dianhydride and an aromatic diamine. Further, Patent Document 2 describes a positive photosensitive resin composition containing a poly(amine-imine) resin having a specific structure and a photoacid generator.
[專利文獻1]日本特開昭52-13315號公報 [Patent Document 1] Japanese Patent Laid-Open No. 52-13315
[專利文獻2]日本特開2010-196041號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-196041
近年來,伴隨著半導體實裝技術之高度化、高密度化,乃要求要圖型膜更微細化。但是,如上述之感光性樹脂組成物,難以獲得高度的解像性。 In recent years, with the increase in the size and density of semiconductor mounting technology, it has been required to make the pattern film finer. However, as described above, the photosensitive resin composition is difficult to obtain high resolution.
因此,本發明之目的在於提供解像性優異之正型感光性樹脂組成物、具有由該組成物所得之樹脂層的乾式薄膜、具有該組成物或該乾式薄膜之樹脂層的硬化物、及具有該硬化物之印刷配線板。 Therefore, an object of the present invention is to provide a positive photosensitive resin composition excellent in resolution, a dry film having a resin layer obtained from the composition, a cured product having the composition or the resin layer of the dry film, and A printed wiring board having the cured product.
本發明者等有鑑於上述問題而專致於檢討的結果發現,若使用由具有環狀脂肪族骨架與芳香族骨架之酸酐與二胺所得之聚醯胺酸來取代由具有芳香族骨架之酸 酐與二胺所得之聚醯胺酸,意外地獲得解像性優異之硬化物。 As a result of reviewing the above problems, the present inventors have found that the use of polyamic acid obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and a diamine to replace an acid having an aromatic skeleton is used. The polyamic acid obtained from the anhydride and the diamine unexpectedly obtains a cured product excellent in resolution.
又,本發明者等發現,相較於使用聚醯胺酸之一部分予以醯亞胺化而成的聚(醯胺-醯亞胺)樹脂,實質上係以使用未醯亞胺化之聚醯胺酸才得以獲得解像性優異之硬化物。 Further, the inventors of the present invention have found that a poly(decylamine-imide) resin which is imidized by using a part of polyamic acid is substantially a polyfluorene which is imidized. Amino acid is obtained as a cured product excellent in resolution.
所以,本發明係以含有(A)由具有環狀脂肪族骨架與芳香族骨架之酸酐與二胺所得之聚醯胺酸、和(B)光酸產生劑之特徵的正型感光性樹脂組成物。 Therefore, the present invention is composed of a positive photosensitive resin containing (A) a polyamic acid obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and a diamine, and (B) a photoacid generator. Things.
本發明之正型感光性樹脂組成物,其中,前述(A)聚醯胺酸係以具有下述一般式(I)所示構造之化合物者佳,
(式中,R1係含由芳香族環與脂肪族烴環所成縮合環之4價有機基、或含芳香族基與脂環式烴基之4價有機基、R2係2價有機基、X係2價有機基、m係1以上之整數、n係0或1以上之整數)。 (wherein R 1 is a tetravalent organic group containing a condensed ring of an aromatic ring and an aliphatic hydrocarbon ring, or a tetravalent organic group containing an aromatic group and an alicyclic hydrocarbon group, and an R 2 -based divalent organic group; And X is a divalent organic group, m is an integer of 1 or more, n is 0 or an integer of 1 or more).
本發明之正型感光性樹脂組成物,其中,前述(A)聚醯胺酸係以具有下述一般式(II)所示構造之化合物者佳,
(式中,R2係2價有機基、X係2價有機基、m係1以上之整數、n係0或1以上之整數)。 (wherein R 2 is a divalent organic group, an X-based divalent organic group, m is an integer of 1 or more, n is 0 or an integer of 1 or more).
本發明之正型感光性樹脂組成物,其中,前述(A)聚醯胺酸係以下述一般式(III)所示構造之化合物者佳,
(式中,R1係含由芳香族環與脂肪族烴環所成縮合環之4價有機基、或含芳香族基與脂環式烴基之4價有機基、R2、R4及R6係2價有機基、R3及R5係4價有機基、m係1以上之整數、n及s各自獨立,係0或1以上之整數,且n及s之至少一者係1以上之整數)。 (wherein R 1 is a tetravalent organic group containing a condensed ring of an aromatic ring and an aliphatic hydrocarbon ring, or a tetravalent organic group containing an aromatic group and an alicyclic hydrocarbon group, R 2 , R 4 and R 6 is a divalent organic group, R 3 and R 5 are a tetravalent organic group, m is an integer of 1 or more, n and s are each independently, and are 0 or 1 or more, and at least one of n and s is 1 or more. The integer).
本發明之正型感光性樹脂組成物,其中,前述(A)聚醯胺酸係以具有下述一般式(V)所示構造之化合物者佳,
(式中,R2、R4及R6係2價有機基、R3及R5係4價有機基、m係1以上之整數、n及s各自獨立,係0或1以上之整數,且n及s之至少一者係1以上之整數)。 (wherein R 2 , R 4 and R 6 are a divalent organic group, R 3 and R 5 are a tetravalent organic group, m is an integer of 1 or more, n and s are each independently, and are an integer of 0 or 1 or more, And at least one of n and s is an integer of 1 or more).
本發明之正型感光性樹脂組成物,其中,前述(B)光酸產生劑的摻合量,對前述(A)聚醯胺酸100質量份而言係1~50質量份者佳。 In the positive photosensitive resin composition of the present invention, the amount of the (B) photoacid generator to be blended is preferably from 1 to 50 parts by mass based on 100 parts by mass of the (A) polyglycine.
本發明之正型感光性樹脂組成物係以使用於包含下述步驟之圖型膜的形成方法者佳:對正型感光性樹脂組成物的塗膜進行曝光之曝光步驟、於前述曝光步驟後將前述塗膜加熱之加熱步驟、以及於前述加熱步驟後進行顯像之顯像步驟。 The positive photosensitive resin composition of the present invention is preferably used in a method of forming a pattern film comprising the following steps: an exposure step of exposing a coating film of a positive photosensitive resin composition, after the aforementioned exposure step A heating step of heating the coating film and a developing step of developing the image after the heating step.
本發明之乾式薄膜,其特徵係具有將前述正型感光性樹脂組成物塗佈於薄膜並予以乾燥所得之樹脂層。 The dry film of the present invention is characterized in that it has a resin layer obtained by applying the positive photosensitive resin composition to a film and drying the film.
本發明之硬化物,其特徵係將前述正型感光性樹脂組成物或前述乾式薄膜的樹脂層予以硬化所得者。 The cured product of the present invention is characterized in that the positive photosensitive resin composition or the resin layer of the dry film is cured.
本發明之印刷配線板,其特徵係具有前述硬化物者。 The printed wiring board of the present invention is characterized in that it has the above-mentioned cured product.
根據本發明,可提供一種解像性優異之正型感光性樹脂組成物、具有由該組成物所得之樹脂層的乾式薄膜、具有該組成物或該乾式薄膜之樹脂層的硬化物、及具有該硬化物之印刷配線板。 According to the present invention, it is possible to provide a positive photosensitive resin composition excellent in resolution, a dry film having a resin layer obtained from the composition, a cured product having the composition or the resin layer of the dry film, and A printed wiring board of the cured product.
[圖1]以顯微鏡觀察使用實施例8之正型感光性樹脂組成物所得(A)L/S=3/3μm、(B)7/7μm及(C)9/9μm之正型圖型膜的圖像。 [Fig. 1] A positive pattern film of (A) L/S = 3/3 μm, (B) 7/7 μm, and (C) 9/9 μm obtained by using a positive photosensitive resin composition of Example 8 under a microscope. Image.
本發明之正型感光性樹脂組成物,其特徵係含有(A)由具有環狀脂肪族骨架與芳香族骨架之酸酐與二胺所得之聚醯胺酸、(B)光酸產生劑。 The positive photosensitive resin composition of the present invention contains (A) a polyamic acid obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and a diamine, and (B) a photoacid generator.
本發明中,聚醯胺酸之原料的酸酐方面,因使用具有環狀脂肪族骨架與芳香族骨架者,而得以獲得解像性優異之硬化物。例如,可獲得L/S為10/10μm以下之圖型膜。 In the present invention, in the case of using an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton, a cured product having excellent resolution is obtained. For example, a pattern film having an L/S of 10/10 μm or less can be obtained.
又,本發明之正型感光性樹脂組成物,在光照射後且顯像前予以加熱的情況下,會發揮特別優異的解像性。意即,藉由對本發明之正型感光性樹脂組成物的塗膜照射活性光線,照射部的溶解性會上昇,並於照射部與非照射部之間產生溶解性之差。然後,予以加熱,將未曝光部的聚醯胺酸之一部分予以醯亞胺化之後,藉由顯像而得以形成 解像性優異之正型圖型膜。顯像後再以高溫進行加熱,若為可完全地實施醯亞胺化即可。 Moreover, the positive photosensitive resin composition of the present invention exhibits particularly excellent resolution when heated after light irradiation and before development. In other words, when the coating film of the positive photosensitive resin composition of the present invention is irradiated with active light rays, the solubility of the irradiated portion increases, and a difference in solubility between the irradiated portion and the non-irradiated portion occurs. Then, it is heated, and a part of the polylysine of the unexposed part is imidized, and then formed by development. Positive pattern film with excellent resolution. After the development, the heating is carried out at a high temperature, and if the imidization is completely carried out.
以下,乃就本發明之正型感光性樹脂組成物含有之成分進行詳細說明。 Hereinafter, the components contained in the positive photosensitive resin composition of the present invention will be described in detail.
[(A)由具有環狀脂肪族骨架與芳香族骨架之酸酐與二胺所得之聚醯胺酸] [(A) Polyglycine obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and a diamine]
本發明所使用之(A)由具有環狀脂肪族骨架與芳香族骨架之酸酐與二胺所得之聚醯胺酸(以下亦稱「(A)聚醯胺酸」),實質上並未被醯亞胺化。(A)聚醯胺酸,係以具有下述一般式(I)所示構造者佳。 (A) Poly (amic acid) obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and a diamine (hereinafter also referred to as "(A) poly-proline)" is substantially not used in the present invention.醯imination. (A) Polylysine is preferably a structure having the following general formula (I).
(式中,R1係含由芳香族環與脂肪族烴環所成縮合環之4價有機基、或含芳香族基與脂環式烴基之4價有機基、R2係2價有機基、X係2價有機基、m係1以上之整數、n係0或1以上之整數)。 (wherein R 1 is a tetravalent organic group containing a condensed ring of an aromatic ring and an aliphatic hydrocarbon ring, or a tetravalent organic group containing an aromatic group and an alicyclic hydrocarbon group, and an R 2 -based divalent organic group; And X is a divalent organic group, m is an integer of 1 or more, n is 0 or an integer of 1 or more).
(A)聚醯胺酸乃是由具有環狀脂肪族骨架與芳香族骨架之酸酐、以及二胺所得者,換言之,一般式(I)中,即使是n為0者亦可。 (A) Polyproline is obtained from an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton, and a diamine. In other words, in the general formula (I), even if n is 0.
R1的含由芳香族環與脂肪族烴環所成縮合環之4價有機基方面,係以下述之中的至少1種所示者佳
式(1-1): Formula (1-1):
Z1係與Z2共通之與伸乙基一起形成芳香族環(較佳為苯環、萘環,特別是苯環)之碳原子數4~12個之不飽和烴基,芳香族環係可具有至少1個之烷基(碳原子數1~4 個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。 Z 1 is an unsaturated hydrocarbon group having a carbon number of 4 to 12 which is an aromatic ring (preferably a benzene ring, a naphthalene ring, particularly a benzene ring) which is common to Z 2 and which forms an aromatic ring. It has at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), a hydroxyl group, and a halogen atom as a substituent.
Z2係與Z1共通之與伸乙基一起形成脂肪族烴環(脂環式烴)之碳原子數3~10個(較佳為4~6個、特別是,4個)之脂肪族烴基,脂肪族烴環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。2個「-」所示之1價的鍵結鍵(即,一組的鍵結鍵、Z2之右側的鍵結鍵)雖相互地鍵結於鄰接的碳上,但「=CR6-」所示之2價的鍵結鍵,則以鍵結於2個「-」的鍵結鍵鍵結之鄰接碳原子旁的碳原子或其旁邊的碳原子者佳。特別是以後者為佳。例如,當脂肪族烴環為環己烷環時,係以3,4位有2個「-」的鍵結鍵鍵結,在2或1位(較佳為1位)則有「=CR6-」鍵結者佳。R6一般而言為氫原子、烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、羥基、鹵素原子,其中以氫原子為佳。 An aliphatic group having 3 to 10 (preferably 4 to 6, especially 4) carbon atoms of the aliphatic hydrocarbon ring (alicyclic hydrocarbon) which is formed by the Z 2 system and Z 1 in combination with the extended ethyl group. The hydrocarbon group and the aliphatic hydrocarbon ring system may have at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), and an aryl group (having 6 to 10 carbon atoms). A hydroxyl group or a halogen atom is used as a substituent. The two-valent bond keys shown in the two "-" (that is, the bond key of one set and the bond key on the right side of Z 2 ) are mutually bonded to the adjacent carbon, but "=CR 6 - The two-valent bond bond shown is preferably bonded to a carbon atom adjacent to a carbon atom adjacent to a carbon bond of two "-" bond bonds or a carbon atom adjacent thereto. Especially the latter is better. For example, when the aliphatic hydrocarbon ring is a cyclohexane ring, there are two "-" bond bonds at the 3,4 position, and "=CR" at the 2 or 1 position (preferably 1 position). 6 - "The key is good. R 6 is generally a hydrogen atom, an alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), a hydroxyl group or a halogen atom, and a hydrogen atom is preferred.
式(1-2): Equation (1-2):
Z3係與Z4共通之與伸乙基一起形成芳香族環(較佳為苯環、萘環,特別是苯環)之碳原子數4~12個之不飽和烴基,芳香族環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。 Z 3 is an unsaturated hydrocarbon group having a carbon number of 4 to 12 which is an aromatic ring (preferably a benzene ring, a naphthalene ring, particularly a benzene ring) which is common to Z 4 and which forms an aromatic ring. It has at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), a hydroxyl group, and a halogen atom as a substituent.
Z4係與Z3共通之與伸乙基一起形成脂肪族烴 環(脂環式烴)之碳原子數3~10個(較佳為4~6個、特別是,4個)之脂肪族烴基,脂肪族烴環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。2個「-」所示之1價的鍵結鍵(一組鍵結鍵,Z4之右側的一組鍵結鍵或左側的一組鍵結鍵)係各自鍵結於鄰接的碳上,一組的鍵結鍵彼此也可鄰接而配置,環若愈大,亦可互相間隔至少1個的碳原子來配置。 An aliphatic group having 3 to 10 (preferably 4 to 6, especially 4) carbon atoms of the aliphatic hydrocarbon ring (alicyclic hydrocarbon) which is formed by the Z 4 system and Z 3 in combination with the extended ethyl group. The hydrocarbon group and the aliphatic hydrocarbon ring system may have at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), and an aryl group (having 6 to 10 carbon atoms). A hydroxyl group or a halogen atom is used as a substituent. Two "-" bond keys (a set of bond keys, a set of bond bonds on the right side of Z 4 or a set of bond bonds on the left side) shown by "-" are each bonded to adjacent carbon. A set of bonding bonds may be disposed adjacent to each other, and the larger the ring, the more the carbon atoms may be spaced apart from each other.
式(1-3): Formula (1-3):
Z5係與Z6共通之與伸乙基一起形成芳香族環(較佳為苯環、萘環,特別是苯環)之碳原子數4~12個之不飽和烴基,芳香族環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。2個「-」所示之1價的鍵結鍵係與鄰接之碳鍵結,2個「-」所示之鄰接的1價鍵結鍵,其組合彼此也可鄰接而配置,環若愈大,亦可互相間隔至少1個的碳原子來配置。2個「-」所示之1價的鍵結鍵係與鄰接之碳鍵結,「=CR7-」所示之2價的鍵結鍵係以間隔「-」的鍵結鍵所鍵結之碳的至少1個碳原子而鍵結於旁邊的碳原子者佳。R7一般而言為氫原子、烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、羥基、鹵素原子,以氫原子為佳。 The Z 5 system and the Z 6 are bonded together with the ethyl group to form an aromatic ring (preferably a benzene ring, a naphthalene ring, particularly a benzene ring), and an unsaturated hydrocarbon group having 4 to 12 carbon atoms, and the aromatic ring system may be used. It has at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), a hydroxyl group, and a halogen atom as a substituent. The two-valent bond bonds shown by the two "-" are adjacent to the carbon bond, and the adjacent one-valent bond bonds represented by two "-" are arranged adjacent to each other, and the ring is more Large, or at least one carbon atom apart from each other. The two-valent bond key shown by the two "-" is bonded to the adjacent carbon bond, and the two-valent bond key shown by "=CR 7 -" is bonded by the bond key of the interval "-". It is preferred that at least one carbon atom of the carbon is bonded to the carbon atom adjacent to it. R 7 is generally a hydrogen atom, an alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), a hydroxyl group or a halogen atom, and a hydrogen atom is preferred.
Z6係與Z5共通之與伸乙基一起形成脂肪族烴 環(脂環式烴環)之碳原子數3~10個(較佳為4~6個、特別是,4個)之脂肪族烴基,飽和烴環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。 The Z 6 system and the Z 5 are in common with the ethyl group to form an aliphatic hydrocarbon ring (alicyclic hydrocarbon ring) having 3 to 10 (preferably 4 to 6, especially 4) carbon atoms. The hydrocarbon group and the saturated hydrocarbon ring system may have at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), and an aryl group (having 6 to 10 carbon atoms). A hydroxyl group or a halogen atom is used as a substituent.
式(1-4): Formula (1-4):
Z7係與Z8共通之與伸乙基一起形成芳香族環(較佳為苯環、萘環,特別是苯環)之碳原子數4~12個之不飽和烴基,芳香族環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。2個「-」所示之1價的鍵結鍵(Z7之右側的鍵結鍵、或、Z7之左側的鍵結鍵)係各自鍵結於鄰接的碳上,一組的鍵結鍵彼此也可鄰接而配置,環若愈大,亦可互相間隔至少1個的碳原子來配置。 Z 7 is a common hydrocarbon group having a carbon number of 4 to 12 which is an aromatic ring (preferably a benzene ring, a naphthalene ring, particularly a benzene ring) which is common to Z 8 and which forms an aromatic ring. It has at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), a hydroxyl group, and a halogen atom as a substituent. 2 "-" of FIG. 1 a monovalent bond bonding (Z 7 on the right side of the bonding bond, or, Z 7 of the left key bonding) system are each bonded to adjacent carbon atoms, a group bonded The bonds may be arranged adjacent to each other, and if the rings are larger, they may be arranged with at least one carbon atom apart from each other.
Z8係與Z7共通之與伸乙基一起形成脂肪族烴環(脂環式烴環)之碳原子數3~10個(較佳為4~6個、特別是,4個)之飽和烴基,飽和烴環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。 The Z 8 series and Z 7 are in common with the ethyl group to form an aliphatic hydrocarbon ring (alicyclic hydrocarbon ring), and the number of carbon atoms is 3 to 10 (preferably 4 to 6, especially 4). The hydrocarbon group and the saturated hydrocarbon ring system may have at least one alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), and a hydroxyl group. A halogen atom is used as a substituent.
式(1-1)~(1-4)之中,以式(1-1)及(1-2)所示之有機基為佳,特別以式(1-1)所示之有機基為佳。 Among the formulae (1-1) to (1-4), the organic group represented by the formulae (1-1) and (1-2) is preferred, and the organic group represented by the formula (1-1) is particularly good.
R1的含芳香族基與脂環式烴基之4價有機基方面,
所示之者佳。 The one shown is good.
A1係2價的芳香族環(較佳為苯環、萘環,特別是苯環)或AR-R10-AR[惟,AR為可具有取代基{較佳為至少1個之烷基(碳原子數1~4個)、芳基(碳原子數6~10個)、烷氧基(碳原子數1~4個)、羥基、鹵素原子}之2價的苯環(較佳為無取代),R10為伸烷基(較佳為碳原子數1~4個)、-SO2-、-COO-、-CONH,以-SO2-為佳]。 A 1 is a divalent aromatic ring (preferably a benzene ring, a naphthalene ring, particularly a benzene ring) or an AR-R 10 -AR [only, AR is an alkyl group which may have a substituent { preferably at least 1) a benzene ring having two valences (having 1 to 4 carbon atoms), an aryl group (6 to 10 carbon atoms), an alkoxy group (1 to 4 carbon atoms), a hydroxyl group or a halogen atom (preferably Unsubstituted), R 10 is an alkylene group (preferably having 1 to 4 carbon atoms), -SO 2 -, -COO-, -CONH, preferably -SO 2 -.
R8、R9各自獨立地為單鍵、伸烷基(碳原子數1~4個)、-SO2-、-COO-、-CONH-,以單鍵、-CONH-為佳。 R 8 and R 9 are each independently a single bond, an alkyl group (having 1 to 4 carbon atoms), -SO 2 -, -COO-, or -CONH-, and a single bond or -CONH- is preferred.
B1、B2各自獨立地為碳原子數5~12個(較佳為6~8個,特別是6個)之脂環式烴基(環狀脂肪族烴基),飽和烴環係可具有至少1個之烷基(碳原子數1~4個)、烷氧基(碳原子數1~4個)、芳基(碳原子數6~10個)、羥基、鹵素原子作為取代基。 B 1 and B 2 are each independently an alicyclic hydrocarbon group (cyclic aliphatic hydrocarbon group) having 5 to 12 carbon atoms (preferably 6 to 8, particularly 6), and the saturated hydrocarbon ring system may have at least One alkyl group (having 1 to 4 carbon atoms), an alkoxy group (having 1 to 4 carbon atoms), an aryl group (having 6 to 10 carbon atoms), a hydroxyl group, and a halogen atom are used as a substituent.
式(I)中,X係如前述,為2價有機基,可舉例如包含醯胺酸基、羥基醯胺酸基、芳香族或脂肪族酯基、醯胺基、醯胺醯亞胺基、矽氧烷基、環氧基、氧雜環丁烷基等作為至少部分構成之基。 In the formula (I), the X system is a divalent organic group as described above, and examples thereof include a proline group, a hydroxyproline group, an aromatic or aliphatic ester group, a guanamine group, and an amidoxime group. A decyloxy group, an epoxy group, an oxetanyl group or the like is at least partially constituted.
m係如前述,為1以上之整數。因(A)聚醯胺酸之較佳的數平均分子量為1000~100萬,更佳為5000~50萬,更佳為1萬~20萬,故以滿足此條件來設定m者為佳。 The m system is an integer of 1 or more as described above. Since the preferred number average molecular weight of (A) polyglycine is from 1,000 to 1,000,000, more preferably from 5,000 to 500,000, more preferably from 10,000 to 200,000, it is preferred to set m to satisfy this condition.
具有一般式(I)所示之構造的化合物,係以下
述一般式(II):
所示之化合物者特別佳。R2、X、m、n係如式(I)中所述。 The compounds shown are particularly preferred. R 2 , X, m, and n are as described in the formula (I).
又,具有一般式(I)所示之構造的化合物,亦可適用具有下述一般式(III)所示之構造的化合物。一般式(I)中n為1以上,藉由使用具有例如一般式(III)所示之共聚構造的聚醯胺酸,可使硬化物的玻璃轉移溫度(Tg)提昇。意即,若根據包含具有共聚構造之聚醯胺酸的正型感光性樹脂組成物,可獲得除了在解像性上優異,在耐熱性等方面也優異的硬化物。 Further, a compound having a structure represented by the general formula (I) can also be applied to a compound having a structure represented by the following general formula (III). In the general formula (I), n is 1 or more, and by using a polyamic acid having a copolymerization structure represented by the general formula (III), the glass transition temperature (Tg) of the cured product can be improved. In other words, it is possible to obtain a cured product which is excellent in resolution and excellent in heat resistance, etc., based on a positive photosensitive resin composition containing a polyamic acid having a copolymerization structure.
(式中,R1係含由芳香族環與脂肪族烴環所成縮合環之4價有機基、或含芳香族基與脂環式烴基之4價有機基、R2、R4及R6係2價有機基、R3及R5係4價有機基、 m係1以上之整數、n及s各自獨立,係0或1以上之整數,且n及s之至少一者係1以上之整數)。 (wherein R 1 is a tetravalent organic group containing a condensed ring of an aromatic ring and an aliphatic hydrocarbon ring, or a tetravalent organic group containing an aromatic group and an alicyclic hydrocarbon group, R 2 , R 4 and R 6 is a divalent organic group, R 3 and R 5 are a tetravalent organic group, m is an integer of 1 or more, n and s are each independently, and are 0 or 1 or more integers, and at least one of n and s is 1 or more. The integer).
一般式(III)中的R1及R2係如式(I)中所述。 R 1 and R 2 in the general formula (III) are as described in the formula (I).
一般式(III)中的R3及R5係如前述,為4價有機基,可舉例如,具有取代或無取代的芳香族骨架之基、或具有取代或無取代的環狀脂肪族骨架之基,較佳為具有取代或無取代的芳香族骨架之基,更佳為具有苯骨架之基、具有聯苯骨架之基或具有雙苯骨架之基。 R 3 and R 5 in the general formula (III) are a tetravalent organic group as described above, and may, for example, be a group having a substituted or unsubstituted aromatic skeleton or a substituted or unsubstituted cyclic aliphatic skeleton. The group is preferably a group having a substituted or unsubstituted aromatic skeleton, more preferably a group having a benzene skeleton, a group having a biphenyl skeleton or a group having a bisbenzene skeleton.
在此,雙苯骨架方面,可舉例如以-O-、-CH2-、-C2H4-、-C(CH3)2-、-C(CF3)2-、-SO2-、-SO-、-S-或-CO-所連結之雙苯骨架。 Here, as the bisbenzene skeleton, for example, -O-, -CH 2 -, -C 2 H 4 -, -C(CH 3 ) 2 -, -C(CF 3 ) 2 -, -SO 2 - a double benzene skeleton linked to -SO-, -S- or -CO-.
一般式(III)中的R4及R6係如前述,為2價有機基,且與前述一般式(I)中的R2同樣。 R 4 and R 6 in the general formula (III) are a divalent organic group as described above, and are the same as R 2 in the above general formula (I).
n與s的和,相對於m,例如為m:(n+s)=1:0~10,較佳為m:(n+s)=1:0.1~5,更佳為m:(n+s)=1:0.3~3。 The sum of n and s, with respect to m, is, for example, m:(n+s)=1:0~10, preferably m:(n+s)=1:0.1~5, more preferably m:(n +s) = 1:0.3~3.
此外,一般式(III)中,s為0之化合物,係可以下述一般式(IV)所示。 Further, in the general formula (III), the compound wherein s is 0 can be represented by the following general formula (IV).
R1~R4、m、n係如式(III)中所述。 R 1 to R 4 , m and n are as described in the formula (III).
具有一般式(III)所示之構造的化合物,各自 以具有下述一般式(V)所示之構造者佳。 a compound having the structure represented by the general formula (III), each It is preferable to have a structure represented by the following general formula (V).
R2~R6、m、n、s係如式(III)中所述。 R 2 to R 6 , m, n, and s are as described in the formula (III).
此外,一般式(V)中,s為0之化合物係可以下述一般式(VI)所示。 Further, in the general formula (V), the compound in which s is 0 can be represented by the following general formula (VI).
R2~R4、m、n係如式(III)中所述。 R 2 to R 4 , m and n are as described in the formula (III).
又,藉由短波長光形成圖型膜時,從聚合物的吸收特性之觀點來看,R1~R6可各自包含脂肪族基。又,例如,當R1~R6包含含氟之基時,係可提昇光吸收的低波長化或介電特性。 Further, when a pattern film is formed by short-wavelength light, R 1 to R 6 each may contain an aliphatic group from the viewpoint of absorption characteristics of the polymer. Further, for example, when R 1 to R 6 contain a fluorine-containing group, the low-wavelength or dielectric properties of light absorption can be improved.
藉此,鹼顯像性變佳,可獲得良好的圖型膜。 Thereby, the alkali developability is improved, and a favorable pattern film can be obtained.
前述(A)聚醯胺酸之酸價係以100mgKOH/g以上為佳,150mgKOH/g以上更佳,200mgKOH/g以上又更佳。酸價的上限係以300mgKOH/g以下為佳。 The acid value of the (A) polyproline is preferably 100 mgKOH/g or more, more preferably 150 mgKOH/g or more, and still more preferably 200 mgKOH/g or more. The upper limit of the acid value is preferably 300 mgKOH/g or less.
(A)聚醯胺酸之酸價乃是依據JIS K-5601-2-1所測定 的。此外,試料的稀釋溶劑方面,係使用丙酮/水(9/1體積比)之混合溶劑且酸價0者以使無水酸之酸價也能夠測定。 (A) The acid value of polylysine is determined according to JIS K-5601-2-1 of. Further, in the case of the dilution solvent of the sample, a mixed solvent of acetone/water (9/1 by volume) was used, and the acid value was 0 so that the acid value of the anhydrous acid can also be measured.
前述(A)聚醯胺酸之合成方法並未特別限定,可藉由以往公知的手法來調製。例如,謹將具有環狀脂肪族骨架與芳香族骨架之酸二酐與二胺於溶液中混合即可合成。如此之合成方法,可於1階段之反應合成,並能輕易且低成本的就得到,又因無需進一步修飾而較佳。此外,藉由酸酐及二胺之中的至少一方使用2種以上,所以將上述具有一般式(III)所示之構造的化合物予以共聚而得以輕易地製造。 The method for synthesizing the above (A) polyproline is not particularly limited, and can be prepared by a conventionally known method. For example, an acid dianhydride having a cyclic aliphatic skeleton and an aromatic skeleton is mixed with a diamine in a solution to synthesize it. Such a synthesis method can be synthesized in a one-stage reaction, and can be obtained easily and at low cost, and is preferable because no further modification is required. In addition, since at least two of the acid anhydride and the diamine are used, the compound having the structure represented by the general formula (III) can be copolymerized and easily produced.
為了獲得前述(A)聚醯胺酸所用的具有環狀脂肪族骨架與芳香族骨架之酸酐,係以羧酸二酐者佳,四羧酸二酐者更佳。可舉下述一般式(8)所示者為例。 In order to obtain the acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton used in the above (A) polyproline, it is preferably a carboxylic acid dianhydride or a tetracarboxylic dianhydride. The following general formula (8) is taken as an example.
(式中的R1係如式(I)所述)。 (R 1 in the formula is as described in the formula (I)).
(A)聚醯胺酸之合成的原料方面,乃是藉由使用一般式(8)之酸酐,而可輕易地導入前述一般式(I)之聚醯胺酸中,其重複單位中的R1基。 (A) The raw material for the synthesis of polylysine can be easily introduced into the polyamic acid of the above general formula (I) by using the acid anhydride of the general formula (8), and the R in the repeating unit 1 base.
前述酸酐之環狀脂肪族骨架方面,係以環己烷骨架為佳。前述酸酐係以於芳香族骨架上不具有烷基(例如t-丁基)者佳。 The cyclic aliphatic skeleton of the above acid anhydride is preferably a cyclohexane skeleton. The above-mentioned acid anhydride is preferably one which does not have an alkyl group (for example, t-butyl group) in the aromatic skeleton.
前述酸酐係以包含具有無水琥珀酸構造之酸酐基者為佳。具有無水琥珀酸構造之酸酐基方面,可舉出如下述之酸酐基。 The foregoing acid anhydride is preferably one containing an acid anhydride group having an anhydrous succinic acid structure. The acid anhydride group having an anhydrous succinic acid structure may, for example, be an acid anhydride group as described below.
前述酸酐之其中,更以下述之化合物為佳。 Among the above acid anhydrides, the following compounds are more preferred.
前述酸酐的分子量,以600以下為佳,500以下更佳,400以下又更佳。分子量的下限係以250以上為佳。 The molecular weight of the acid anhydride is preferably 600 or less, more preferably 500 or less, and still more preferably 400 or less. The lower limit of the molecular weight is preferably 250 or more.
(A)聚醯胺酸之合成中,在不違背本發明之要旨下,係可併用公知的其他酸二酐。 In the synthesis of (A) polyaminic acid, other known acid dianhydrides may be used in combination without departing from the gist of the present invention.
如此的其他酸二酐方面,可舉例如:乙烯四羧酸二酐、丁烷四羧酸二酐、環丁烷四羧酸二酐、甲基環丁烷四羧酸二酐、環戊烷四羧酸二酐等之脂肪族四羧酸二酐;均苯四甲酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、2,2’,3,3’-二苯甲酮四羧酸二酐、2,3’,3,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-聯苯四羧酸二酐、2,2’,3,3’-聯苯四羧酸二酐、2,3’,3,4’-聯苯四羧酸二酐、2,2’,6,6’-聯苯四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、雙(3,4-二羧基苯基)醚二酐、雙(3,4-二羧基苯基)碸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)甲烷二酐、2,2-雙(3,4-二羧基苯基)-1,1,1,3,3,3-六氟丙烷二酐、2,2-雙(2,3-二羧基苯基)-1,1,1,3,3,3-六氟丙烷二酐、1,3-雙〔(3,4-二羧基)苯甲醯基〕苯二酐、1,4-雙〔(3,4-二羧基)苯甲醯基〕苯二酐、2,2-雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}丙烷二酐、2,2-雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}丙烷二酐、雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}酮二酐、雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}酮二酐、4,4’-雙〔4-(1,2-二羧基)苯氧基〕聯苯二酐、4,4’-雙〔3- (1,2-二羧基)苯氧基〕聯苯二酐、雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}酮二酐、雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}酮二酐、雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}碸二酐、雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}碸二酐、雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}硫醚二酐、雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}硫醚二酐、2,2-雙{4-〔4-(1,2-二羧基)苯氧基〕苯基}-1,1,1,3,3,3-六氟丙烷二酐、2,2-雙{4-〔3-(1,2-二羧基)苯氧基〕苯基}-1,1,1,3,3,3-六氟丙烷二酐、2,3,6,7-萘四羧酸二酐、1,1,1,3,3,3-六氟-2,2-雙(2,3-或3,4-二羧基苯基)丙烷二酐、1,4,5,8-萘四羧酸二酐、1,2,5,6-萘四羧酸二酐、1,2,3,4-苯四羧酸二酐、3,4,9,10-苝四羧酸二酐、2,3,6,7-蒽四羧酸二酐、1,2,7,8-菲四羧酸二酐、吡啶四羧酸二酐、磺醯基二苯二甲酸酐、m-ter-苯基-3,3’,4,4’-四羧酸二酐、p-ter-苯基-3,3’,4,4’-四羧酸二酐等之芳香族四羧酸二酐等。 Examples of such other acid dianhydrides include ethylene tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, cyclobutane tetracarboxylic dianhydride, methylcyclobutane tetracarboxylic dianhydride, and cyclopentane. An aliphatic tetracarboxylic dianhydride such as tetracarboxylic dianhydride; pyromellitic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,2',3,3 '-benzophenone tetracarboxylic dianhydride, 2,3',3,4'-benzophenonetetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 2,3',3,4'-biphenyltetracarboxylic dianhydride, 2,2',6,6'-biphenyltetracarboxylate Acid dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, bis(3,4-dicarboxyl) Phenyl)ether dianhydride, bis(3,4-dicarboxyphenyl)ruthenium anhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyl) Phenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)-1,1,1,3,3,3- Hexafluoropropane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropane dianhydride, 1,3-double [(3,4) -dicarboxy)benzimidylbenzene phthalic anhydride, 1,4-bis[(3,4-dicarboxyl) Benzyl hydrazinyl phthalic anhydride, 2,2-bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl}propane dianhydride, 2,2-double {4-[3 -(1,2-dicarboxy)phenoxy]phenyl}propane dianhydride, bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl}one dianhydride, double {4- [3-(1,2-Dicarboxy)phenoxy]phenyl}one dianhydride, 4,4'-bis[4-(1,2-dicarboxy)phenoxy]biphenyl dianhydride, 4, 4'-double [3- (1,2-dicarboxy)phenoxy]biphenyl dianhydride, bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl}one dianhydride, double {4-[3- (1,2-dicarboxy)phenoxy]phenyl}one dianhydride, bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl}ruthenic anhydride, double {4-[ 3-(1,2-dicarboxy)phenoxy]phenyl}ruthenic anhydride, bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl}thioether dianhydride, double { 4-[3-(1,2-dicarboxy)phenoxy]phenyl}thioether dianhydride, 2,2-bis{4-[4-(1,2-dicarboxy)phenoxy]phenyl }-1,1,1,3,3,3-hexafluoropropane dianhydride, 2,2-bis{4-[3-(1,2-dicarboxy)phenoxy]phenyl}-1,1 , 1,3,3,3-hexafluoropropane dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-double (2,3- or 3,4-dicarboxyphenyl)propane dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1 , 2,3,4-benzenetetracarboxylic dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, 2,3,6,7-nonanedicarboxylic dianhydride, 1,2,7, 8-phenanthrenecarboxylic acid dianhydride, pyridine tetracarboxylic dianhydride, sulfonyl phthalic anhydride, m-ter-phenyl-3,3',4,4'-tetracarboxylic dianhydride, p- Aromatic tetracarboxylic dianhydride such as ter-phenyl-3,3',4,4'-tetracarboxylic dianhydride Wait.
為了獲得前述(A)聚醯胺酸所用的二胺方面,可舉出下述一般式(10)所示之二胺。惟,下述為一例,在不違背本發明之要旨下,係可使用公知者。 In order to obtain the diamine used in the above (A) polyproline, the diamine represented by the following general formula (10) can be mentioned. However, the following is an example, and a person skilled in the art can be used without departing from the gist of the present invention.
H2N-R2.NH2 (10) H 2 NR 2 . NH 2 (10)
(式中,R2係如式(I)所述)。 (wherein R 2 is as described in the formula (I)).
前述二胺係以具有芳香族環者佳,具有複數個芳香族環者更佳。具有複數個芳香族環時,芳香族環彼 此係以直接鍵結或透過(硫代)醚基而鍵結者佳。 The above diamine is preferably one having an aromatic ring and more preferably having a plurality of aromatic rings. When there are a plurality of aromatic rings, the aromatic ring This is preferred by direct bonding or by trans (thio)ether groups.
R2為2價的芳香族基時之二胺的例子方面,可舉出對苯二胺、3,3’-二甲基-4,4’-二胺基聯苯、2,2’-二甲基-4,4’-二胺基聯苯、3,3’-二甲氧基-4,4’-二胺基聯苯、3,3’-二氯-4,4’-二胺基聯苯、9,10-雙(4-胺基苯基)蒽、4,4’-二胺基二苯甲酮、4,4’-二胺基二苯基碸、3,3’-二胺基二苯基碸、4,4’-二胺基二苯基亞碸、1,3-雙(3-胺基苯氧基)苯、雙〔4-(4-胺基苯氧基)苯基〕碸、雙〔4-(3-胺基苯氧基)苯基〕碸、4,4’-雙(4-胺基苯氧基)聯苯、4,4’-雙(3-胺基苯氧基聯苯、雙〔4-(4-胺基苯氧基)苯基〕醚、1,1,1,3,3,3-六氟-2,2-雙(4-胺基苯基)丙烷、1,1,1,3,3,3-六氟-2,2-雙〔4-(4-胺基苯氧基)苯基〕丙烷、1,1,1,3,3,3-六氟-2,2-雙(3-胺基-4-甲基苯基)丙烷、間苯二胺、3、4’-二胺基二苯基醚、4,4’-二胺基二苯基醚、4,4’-二胺基二苯基硫醚、3,4’-二胺基二苯基醚、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯。 Examples of the diamine in which R 2 is a divalent aromatic group include p-phenylenediamine, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'- Dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-di Aminobiphenyl, 9,10-bis(4-aminophenyl)anthracene, 4,4'-diaminobenzophenone, 4,4'-diaminodiphenylanthracene, 3,3' -diaminodiphenylphosphonium, 4,4'-diaminodiphenylarylene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy) Phenyl]anthracene, bis[4-(3-aminophenoxy)phenyl]anthracene, 4,4'-bis(4-aminophenoxy)biphenyl, 4,4'-double ( 3-aminophenoxybiphenyl, bis[4-(4-aminophenoxy)phenyl]ether, 1,1,1,3,3,3-hexafluoro-2,2-dual (4 -aminophenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis[4-(4-aminophenoxy)phenyl]propane, 1,1,1 , 3,3,3-hexafluoro-2,2-bis(3-amino-4-methylphenyl)propane, m-phenylenediamine, 3,4'-diaminodiphenyl ether, 4, 4'-Diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl ether, 1,4-bis(4-aminophenoxyl) Base) benzene, 1,3-bis(4-aminophenoxy)benzene.
R2為2價的脂肪族基時之二胺的例子方面,可舉出1,1-間二甲伸苯基二胺、1,3-丙烷二胺、四亞甲基二胺、五亞甲基二胺、六亞甲基二胺、七亞甲基二胺、八亞甲基二胺、九亞甲基二胺、4,4-二胺基七亞甲基二胺、1,4-二胺基環己烷、異佛爾酮二胺、四氫二環亞戊二烯基二胺、六氫-4,7-亞甲基茚二亞甲基二胺、三環[6.2.1.02,7]-十一碳烯二甲基二胺、4,4’-亞甲基雙(環己基胺)、異佛爾酮二胺。 Examples of the diamine in which R 2 is a divalent aliphatic group include 1,1-m-dimethylphenylene diamine, 1,3-propanediamine, tetramethylenediamine, and quinone. Methyldiamine, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, ninethylenediamine, 4,4-diaminoheptamethylenediamine, 1,4 - diaminocyclohexane, isophorone diamine, tetrahydrobicyclopentylene diamine, hexahydro-4,7-methylene quinone dimethylene diamine, tricyclo [6.2. 1.02,7]-undecene dimethyldiamine, 4,4'-methylenebis(cyclohexylamine), isophoronediamine.
又,別的例子方面,可舉出下述式(11)所示之二胺基聚矽氧烷等。 In addition, as another example, a diamine-based polyoxane represented by the following formula (11) and the like can be given.
式中,R28及R29各自獨立地表示二價之烴基、R30及R31各自獨立地表示一價之烴基。p為1以上、較佳為1~10之整數。 In the formula, R 28 and R 29 each independently represent a divalent hydrocarbon group, and R 30 and R 31 each independently represent a monovalent hydrocarbon group. p is an integer of 1 or more, preferably 1 to 10.
具體而言,上述式(11)中之R28及R29方面,可舉出亞甲基、伸乙基、伸丙基等之碳數1~7之伸烷基、伸苯基等之碳數6~18之伸芳基等,R30及R31方面,可舉出甲基、乙基等之碳數1~7之烷基、苯基等之碳數6~12之芳基等。 Specifically, examples of R 28 and R 29 in the above formula (11) include carbons having a carbon number of 1 to 7 such as a methylene group, an ethyl group and a stretching group, and a phenyl group. In the case of R 30 and R 31 , an alkyl group having 1 to 7 carbon atoms such as a methyl group or an ethyl group, an aryl group having a carbon number of 6 to 12 such as a phenyl group, or the like can be given.
前述二胺,係以3、4’-二胺基二苯基醚、4,4’-二胺基二苯基醚等之二胺基二苯基醚者特別佳。 The diamine is particularly preferably a diaminodiphenyl ether such as 3,4'-diaminodiphenyl ether or 4,4'-diaminodiphenyl ether.
感光性樹脂組成物中,(A)聚醯胺酸方面,可使用單一種類的材料,亦可使用複數種類作為混合物。又,可為由R1及R2各自複數之構造所成的共聚物。 In the photosensitive resin composition, a single type of material may be used as the (A) polyglycolic acid, and a plurality of types may be used as a mixture. Further, it may be a copolymer composed of a plurality of structures of R 1 and R 2 .
(A)聚醯胺酸的摻合量,以組成物的固形分基準計,為20~80質量%者佳。 The amount of (A) polyglycine blended is preferably from 20 to 80% by mass based on the solid content of the composition.
[(B)光酸產生劑] [(B) Photoacid generator]
(B)光酸產生劑方面,可舉出萘并醌二疊氮化合物、 二芳基鋶鹽、三芳基鋶鹽、二烷基苯甲醯甲基鋶鹽、二芳基錪鹽、芳基重氮鹽、芳香族四羧酸酯、芳香族磺酸酯、硝基苄基酯、芳香族N-氧基醯亞胺磺酸酯、芳香族磺醯胺、苯并醌二偶氮磺酸酯等。(B)光酸產生劑係以阻溶劑者佳。其中,以萘并醌二疊氮化合物者佳。 (B) The photoacid generator may, for example, be a naphthoquinonediazide compound, Diarylsulfonium salt, triarylsulfonium salt, dialkyl benzamidine methyl phosphonium salt, diarylsulfonium salt, aryl diazonium salt, aromatic tetracarboxylic acid ester, aromatic sulfonate, nitrobenzyl A base ester, an aromatic N-oxy sulfenedimine sulfonate, an aromatic sulfonamide, a benzofluorene diazo sulfonate or the like. (B) The photoacid generator is preferably a solvent retarder. Among them, naphthoquinone diazide compounds are preferred.
萘并醌二疊氮化合物方面,具體而言,可使用例如參(4-羥基苯基)-1-乙基-4-異丙基苯之萘并醌二疊氮加成物(例如,三寶化學研究所公司製的TS533,TS567,TS583,TS593),或是四羥基二苯甲酮之萘并醌二疊氮加成物(例如,三寶化學研究所公司製的BS550,BS570,BS599)等。 As the naphthoquinonediazide compound, specifically, for example, a naphthoquinonediazide adduct of 1,4-(hydroxyphenyl)-1-ethyl-4-isopropylbenzene (for example, three treasures) can be used. TS533, TS567, TS583, TS593, manufactured by Chemical Research Institute, or naphthoquinonediazide adduct of tetrahydroxybenzophenone (for example, BS550, BS570, BS599, manufactured by Sambo Chemical Research Co., Ltd.) .
如此的(B)光酸產生劑,可單獨地使用1種,亦可適當地組合2種以上使用。(B)光酸產生劑的摻合量,相對於前述(A)聚醯胺酸100質量份,係以1~50質量份者佳。藉由使其在此範圍,溶解抑制效果與溶解促進效果的均衡會變佳。更佳為10~40質量份,更佳為10~35質量份,特別佳為10~25質量份。 The (B) photoacid generator may be used singly or in combination of two or more kinds as appropriate. (B) The amount of the photoacid generator to be blended is preferably from 1 to 50 parts by mass based on 100 parts by mass of the above (A) polyglycine. By making it in this range, the balance between the dissolution inhibiting effect and the dissolution promoting effect is improved. More preferably, it is 10 to 40 parts by mass, more preferably 10 to 35 parts by mass, particularly preferably 10 to 25 parts by mass.
以下,就可摻入本發明之感光性樹脂組成物的其他成分進行說明。 Hereinafter, other components which are incorporated in the photosensitive resin composition of the present invention will be described.
本發明之正型感光性樹脂組成物中,可摻合(C)溶劑。(C)溶劑方面,若為可使(A)聚醯胺酸、(B)光酸產生劑及其他添加劑溶解者即可,並無特別限定。可舉例如N,N’-二甲基甲醯胺、N-甲基吡咯啶酮、N-乙基-2-吡咯啶酮、N,N’-二甲基乙醯胺、二乙二醇二甲基醚、環戊 酮、γ-丁內酯、α-乙醯基-γ-丁內酯、四甲基尿素、1,3-二甲基-2-咪唑啉酮、N-環己基-2-吡咯啶酮、二甲基亞碸、六甲基磷醯胺、吡啶、γ-丁內酯、二乙二醇單甲基醚。此等可單獨使用,亦可混合2種以上使用。使用的溶劑之量,因應塗佈膜厚或黏度,相對於(A)聚醯胺酸100質量份,可使用50~9000質量份之範圍。 In the positive photosensitive resin composition of the present invention, the solvent (C) can be blended. (C) The solvent is not particularly limited as long as it can dissolve (A) polyphthalic acid, (B) photoacid generator, and other additives. For example, N,N'-dimethylformamide, N-methylpyrrolidone, N-ethyl-2-pyrrolidone, N,N'-dimethylacetamide, diethylene glycol Dimethyl ether, cyclopentane Ketone, γ-butyrolactone, α-ethinyl-γ-butyrolactone, tetramethyl urea, 1,3-dimethyl-2-imidazolidinone, N-cyclohexyl-2-pyrrolidone, Dimethyl sulfonium, hexamethylphosphoniumamine, pyridine, γ-butyrolactone, diethylene glycol monomethyl ether. These may be used singly or in combination of two or more. The amount of the solvent to be used may be in the range of 50 to 9000 parts by mass based on 100 parts by mass of the (A) polyphthalic acid, depending on the coating film thickness or viscosity.
本發明之正型感光性樹脂組成物中,為了進一步使光感度提昇而得以摻合公知的增感劑。 In the positive photosensitive resin composition of the present invention, a known sensitizer is blended in order to further improve the light sensitivity.
又,本發明之正型感光性樹脂組成物中,為了提昇與基材之接著性,係可添加公知的接著助劑。 Further, in the positive photosensitive resin composition of the present invention, a known adhesion aid may be added in order to improve the adhesion to the substrate.
本發明之正型感光性樹脂組成物,係以不含具有苯酚性羥基之化合物者佳。 The positive photosensitive resin composition of the present invention is preferably one which does not contain a compound having a phenolic hydroxyl group.
為了賦予本發明之樹脂組成物加工特性或各種機能性,亦可摻合其他各樣的有機或無機之低分子或高分子化合物。可使用例如著色劑、界面活性劑、調平劑、可塑劑、微粒子等。微粒子中,可含聚苯乙烯、聚四氟乙烯等之有機微粒子、膠態的氧化矽、碳材、層狀矽酸鹽等之無機微粒子。又,本發明之樹脂組成物中亦可摻合各種著色劑及纖維等。 In order to impart processing characteristics or various functional properties to the resin composition of the present invention, various other organic or inorganic low molecular or high molecular compounds may be blended. For example, a coloring agent, a surfactant, a leveling agent, a plasticizer, fine particles, or the like can be used. The fine particles may contain organic fine particles such as polystyrene or polytetrafluoroethylene, colloidal cerium oxide, carbon material, or layered niobate. Further, various coloring agents, fibers, and the like may be blended in the resin composition of the present invention.
[乾式薄膜] [Dry film]
本發明之乾式薄膜,乃是具有將本發明之正型感光性樹脂組成物塗佈後乾燥所形成之樹脂層。本發明之乾式薄膜,可將樹脂層接於基材之方式積層來使用。 The dry film of the present invention is a resin layer formed by applying and drying a positive photosensitive resin composition of the present invention. The dry film of the present invention can be used by laminating a resin layer to a substrate.
本發明之乾式薄膜,係可於載體薄膜上藉由刮刀塗佈機、唇口塗佈機、缺角輪塗佈機、薄膜塗佈機等之適當的方法均一地塗佈本發明之正型感光性樹脂組成物,予以乾燥,形成前述樹脂層,較佳為可藉由於其上積層被覆薄膜來製造。被覆薄膜與載體薄膜係可為同一薄膜材料,亦可使用不同的薄膜。 The dry film of the present invention can uniformly coat the positive film of the present invention on a carrier film by a suitable method such as a knife coater, a lip coater, a notch coater, a film coater or the like. The photosensitive resin composition is dried to form the resin layer, and it is preferably produced by laminating a film thereon. The coated film and the carrier film may be the same film material, and different films may also be used.
本發明之乾式薄膜中,載體薄膜及被覆薄膜的薄膜材料係可使用公知的任何一種作為乾式薄膜中所用者。 In the dry film of the present invention, any of known films can be used as the dry film for the carrier film and the film material of the film to be coated.
載體薄膜方面,係可使用例如2~150μm之厚度的聚對苯二甲酸乙二醇酯等之聚酯薄膜等之熱可塑性薄膜。 As the carrier film, for example, a thermoplastic film such as a polyester film such as polyethylene terephthalate having a thickness of 2 to 150 μm can be used.
被覆薄膜方面,係可使用聚乙烯薄膜、聚丙烯薄膜等,但以與感光性樹脂層的接著力較載體薄膜小者佳。 As the coating film, a polyethylene film, a polypropylene film, or the like can be used, but the adhesion to the photosensitive resin layer is smaller than that of the carrier film.
本發明之乾式薄膜上的感光性樹脂層之膜厚,係以100μm以下為佳,5~50μm之範圍更佳。 The film thickness of the photosensitive resin layer on the dry film of the present invention is preferably 100 μm or less, and more preferably 5 to 50 μm.
使用本發明之正型感光性樹脂組成物,係如下述製造作為其硬化物之圖型膜。 Using the positive photosensitive resin composition of the present invention, a patterned film as a cured product thereof is produced as follows.
首先,步驟1方面,乃是藉由將正型感光性樹脂組成物塗佈於基材上並予以乾燥,或是自乾式薄膜將樹脂層轉印至基材上而得塗膜。將正型感光性樹脂組成物塗佈於基材上之方法方面,可使用過去以來用於感光性樹脂組成物的塗佈之方法,例如以旋轉塗佈機、刮棒塗佈 機、刮刀塗佈機、淋幕塗佈機、網版印刷機等進行塗佈之方法,以噴霧塗佈機進行噴霧塗佈之方法,再者,可使用噴墨法等。塗膜的乾燥方法方面,可使用以風乾、烘箱或加熱板所為之加熱乾燥、真空乾燥等之方法。又,塗膜的乾燥係以不引發感光性樹脂組成物中的(A)聚醯胺酸之醯亞胺化之條件來進行者佳。具體而言,乃是使自然乾燥、送風乾燥或加熱乾燥以70~120℃、20分~1小時之條件下進行。較佳為在加熱板上乾燥20~40分鐘。又,亦可真空乾燥,此時係於室溫下、20分鐘~1小時之條件下進行。 First, in the first step, a positive-type photosensitive resin composition is applied onto a substrate and dried, or a resin film is transferred from a dry film to a substrate to obtain a coating film. In the method of applying the positive photosensitive resin composition to the substrate, a method for coating a photosensitive resin composition in the past, for example, a spin coater or a bar coating can be used. A method of coating by a machine, a knife coater, a curtain coater, a screen printing machine, or the like, a spray coating method by a spray coater, and an inkjet method or the like can be used. As the drying method of the coating film, a method of heating drying, vacuum drying, or the like by air drying, an oven or a hot plate can be used. Further, the drying of the coating film is preferably carried out under the conditions of imidization of the (A) polyglycolic acid in the photosensitive resin composition. Specifically, it is carried out under natural drying, air drying or heating and drying at 70 to 120 ° C for 20 minutes to 1 hour. It is preferably dried on a hot plate for 20 to 40 minutes. Further, it may be dried in a vacuum, and it is carried out at room temperature for 20 minutes to 1 hour.
對基材並無特別限制,可廣泛地適用於矽晶圓、配線基板、各種樹脂、金屬、半導體裝置之鈍化保護膜等。 The substrate is not particularly limited, and can be widely applied to tantalum wafers, wiring boards, various resins, metals, passivation protective films for semiconductor devices, and the like.
接著,步驟2方面,乃是將上述塗膜透過具有圖型之光罩或直接曝光。曝光光線係使用可使(B)光酸產生劑活性化,並可使酸產生之波長者。具體而言,曝光光線係以最大波長位於350~410nm之範圍者佳。如上述,若使用適當的增感劑,則可調整光感度。曝光裝置方面,可使用接觸式對準機、鏡面投射、步進機、雷射直接曝光裝置等。 Next, in the second step, the coating film is passed through a mask having a pattern or directly exposed. The exposure light is a wavelength at which the (B) photoacid generator can be activated and the acid can be generated. Specifically, the exposure light is preferably in a range in which the maximum wavelength is in the range of 350 to 410 nm. As described above, when an appropriate sensitizer is used, the light sensitivity can be adjusted. For the exposure device, a contact aligner, a mirror projection, a stepper, a laser direct exposure device, or the like can be used.
接著,步驟3方面,乃是予以加熱而將未曝光部的(A)聚醯胺酸之一部分醯亞胺化。在此,醯亞胺化率為30%程度。加熱時間及加熱溫度可依(A)聚醯胺酸、塗佈膜厚、(B)光酸產生劑的種類而適當地變更。典型上,10μm程度之塗佈膜厚,在110~200℃時為30秒~3分 程度。藉由使加熱溫度為110℃以上,可有效率地達成部分的醯亞胺化。此外,若使加熱溫度為200℃以下,則可抑制曝光部的醯亞胺化,讓曝光部與未曝光部的溶解性之差變大,圖型膜容易形成。 Next, in the third step, heat is applied to partially iridize one of the (A) polylysines in the unexposed portion. Here, the oxime imidization ratio is about 30%. The heating time and the heating temperature can be appropriately changed depending on the type of (A) polyphthalic acid, the coating film thickness, and (B) the photoacid generator. Typically, a coating film thickness of about 10 μm is 30 seconds to 3 minutes at 110 to 200 ° C. degree. By setting the heating temperature to 110 ° C or higher, partial sulfiliation can be efficiently achieved. In addition, when the heating temperature is 200° C. or lower, the imidization of the exposed portion can be suppressed, and the difference in solubility between the exposed portion and the unexposed portion can be increased, and the pattern film can be easily formed.
接著,步驟4方面,係以顯像液處理塗膜。藉此,去除塗膜中的曝光部分,並於基材上形成由部分醯亞胺化之(A)聚醯胺酸所成的圖型膜。 Next, in the case of step 4, the coating film is treated with a developing solution. Thereby, the exposed portion in the coating film is removed, and a pattern film formed of a partially fluorinated (A) polyphthalic acid is formed on the substrate.
顯像中所用的方法,可選擇以往習知之光阻劑之顯像方法,例如旋轉噴霧法、槳式攪拌器法、伴隨超音波處理之浸漬法等中任意之方法。顯像液方面,可舉出氫氧化鈉、碳酸鈉、矽酸鈉、氨水等之無機鹼類、乙基胺、二乙基胺、三乙基胺、三乙醇胺等之有機胺類、氫氧化四甲基銨、氫氧化四丁基銨等之四級銨鹽類等之水溶液。又,因應需要,可於此等中添加適當量的甲醇、乙醇、異丙基醇等之水溶性有機溶劑或界面活性劑。然後,因應需要,可將塗膜以潤洗液洗淨而得圖型膜。潤洗液方面,可單獨或組合蒸餾水、甲醇、乙醇、異丙醇等來使用。又,顯像液方面,亦可使用上述(C)溶劑。 As the method used in the development, a conventional development method of a photoresist such as a rotary spray method, a paddle stirrer method, or a dipping method accompanying ultrasonic treatment can be selected. Examples of the developing solution include inorganic bases such as sodium hydroxide, sodium carbonate, sodium citrate, and aqueous ammonia, and organic amines such as ethylamine, diethylamine, triethylamine, and triethanolamine, and hydrogen peroxide. An aqueous solution of a quaternary ammonium salt such as tetramethylammonium or tetrabutylammonium hydroxide. Further, an appropriate amount of a water-soluble organic solvent such as methanol, ethanol or isopropyl alcohol or a surfactant may be added thereto as needed. Then, if necessary, the coating film can be washed with a rinsing liquid to obtain a pattern film. As the rinse liquid, distilled water, methanol, ethanol, isopropyl alcohol or the like may be used alone or in combination. Further, as the developing liquid, the above (C) solvent can also be used.
然後,步驟5方面,乃將圖型膜予以加熱而得硬化塗膜(硬化物)。此時,將(A)聚醯胺酸完全醯亞胺化,若得聚醯亞胺即可。加熱溫度係以可使聚醯亞胺之圖型膜硬化之方式適當地設定即可。例如,於惰性氣體中於150~300℃進行5~120分鐘程度的加熱。加熱溫度更佳的範圍是150~250℃,更佳的範圍為180~220℃。加熱係可 藉由使用例如加熱板、烘箱、可設定溫度計畫之昇溫式烘箱來進行。此時的氛圍(氣體)可使用空氣,亦可使用氮、氬等之惰性氣體。 Then, in the case of step 5, the pattern film is heated to obtain a hardened coating film (cured material). At this time, (A) poly-proline is completely imidized, and if it is obtained by polyimine. The heating temperature may be appropriately set so that the pattern film of the polyimide may be hardened. For example, it is heated at 150 to 300 ° C for 5 to 120 minutes in an inert gas. The heating temperature is preferably in the range of 150 to 250 ° C, and more preferably in the range of 180 to 220 ° C. Heating system This is done by using, for example, a heating plate, an oven, or a temperature-increasing oven that can be set with a thermometer. In the atmosphere (gas) at this time, air may be used, and an inert gas such as nitrogen or argon may be used.
本發明之正型感光性樹脂組成物,可使用作為印刷油墨、接著劑、填充劑、電子材料、光線路零件、成形材料、阻劑材料、建築材料、3次元造形、光學構件等、樹脂材料所用之公知的各種領域、製品,特別是在聚醯亞胺膜的耐熱性、尺寸安定性、絕緣性等之特性上有效之廣大範圍的領域、製品,例如塗料或印刷油墨、或彩色濾光器、可撓性顯示器用薄膜、半導體裝置、電子零件、層間絕緣膜、配線被覆膜、光線路、光線路零件、抗反射膜、立體照相、光學構件及建築材料等之形成材料。 The positive photosensitive resin composition of the present invention can be used as a printing ink, an adhesive, a filler, an electronic material, an optical circuit component, a molding material, a resist material, a building material, a three-dimensional shape, an optical member, or the like, and a resin material. A wide range of fields and products, such as paints or printing inks, or color filters, which are widely used in various fields and products, particularly in the properties of heat resistance, dimensional stability, and insulation properties of polyimide films. A material for forming a film for a flexible display, a semiconductor device, an electronic component, an interlayer insulating film, a wiring coating film, an optical circuit, an optical circuit component, an antireflection film, a stereoscopic image, an optical member, and a building material.
特別是,本發明之正型感光性樹脂組成物,主要被使用為圖型膜形成材料(阻劑),且藉此所形成之圖型膜,在作為聚醯亞胺所成之永久膜上,有賦予耐熱性或絕緣性之成分的機能,適合用以形成例如彩色濾光器、可撓性顯示器用薄膜、電子零件、半導體裝置、層間絕緣膜、阻焊劑或包覆層膜等之配線被覆膜、焊堤(solder dum)、光線路、光線路零件、抗反射膜、其他的光學構件或電子構件。又,本發明之正型感光性樹脂組成物因在解像性上表現優異,而得以適用於封裝基板,特別是晶圓程度封裝基板之圖型膜形成材料。 In particular, the positive photosensitive resin composition of the present invention is mainly used as a pattern forming material (resist), and the patterned film formed thereby is formed on a permanent film formed of polyimine. It has a function of imparting heat-resistant or insulating components, and is suitable for forming wiring such as a color filter, a film for a flexible display, an electronic component, a semiconductor device, an interlayer insulating film, a solder resist, or a clad film. Coating film, solder dum, optical circuit, optical circuit component, anti-reflection film, other optical components or electronic components. Further, the positive photosensitive resin composition of the present invention is excellent in resolution, and is suitable for use in a package substrate, in particular, a pattern film forming material of a wafer-level package substrate.
[實施例] [Examples]
以下,使用實施例更詳細地說明本發明,但本發明不受下述實施例所限定。此外,以下所謂的「部」及「%」在沒有特別規定下,全部為質量基準。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention should not be construed as limited. In addition, the following "parts" and "%" are all based on quality unless otherwise specified.
[合成例1:聚醯胺酸A-1之合成] [Synthesis Example 1: Synthesis of Polyaminic Acid A-1]
於容量300mL之分離式燒瓶中,投入下述表1之二胺30mmol之後,邊導入氮氣,邊以脫水NMP(N-甲基吡咯啶酮)使二胺溶解。使二胺全部溶解之後,緩慢地加入下述表1之酸酐30mmol。以少量的NMP將附著於燒瓶壁之酸酐流入至反應溶液中之後,24小時室溫下攪拌使其反應,得到15質量%之聚醯胺酸(PAA)A-1的塗漆。脫水NMP之投入量為PAA之塗漆量的75質量%。此外,表中的酸酐「TDA」係使用4-(2,5-二側氧基四氫呋喃-3-基)-1,2,3,4-四氫萘-1,2-二羧酸酐(新日本理科公司製RIKACID TDA-100)。二胺「4,4’-ODA」係使用4,4’-二胺基二苯基醚(和歌山精化公司製)。 After placing 30 mmol of the diamine of the following Table 1 in a separation flask having a capacity of 300 mL, the diamine was dissolved by dehydrating NMP (N-methylpyrrolidone) while introducing nitrogen gas. After all the diamine was dissolved, 30 mmol of the anhydride of Table 1 below was slowly added. After the acid anhydride adhering to the wall of the flask was poured into the reaction solution with a small amount of NMP, the mixture was stirred at room temperature for 24 hours to obtain a 15% by mass paint of polyacrylic acid (PAA) A-1. The input amount of the dehydrated NMP was 75% by mass of the paint amount of the PAA. Further, the acid anhydride "TDA" in the table is 4-(2,5-di-oxytetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic anhydride (new Japan Science Corporation RIKACID TDA-100). As the diamine "4,4'-ODA", 4,4'-diaminodiphenyl ether (manufactured by Wakayama Seika Co., Ltd.) was used.
[合成例2、3:聚醯胺酸A-2、A-3之合成] [Synthesis Example 2, 3: Synthesis of Polyaminic Acid A-2, A-3]
除了將二胺及酸酐分別變更為下述表2所示之化合物之外,其餘係與合成例1同樣實施,獲得聚醯胺酸A-2及A-3之塗漆。此外,表中係使用N,N’-雙(1,2-環己烷二羧酸酐-4-基)羰基-1,4-苯二胺(日本精化公司製)作為酸酐「PPHT」。二胺「3,4’-ODA」方面,係使用3,4’-二胺基二苯基醚(日純化學公司製)。 Except that the diamine and the acid anhydride were each changed to the compound shown in the following Table 2, the same procedure as in Synthesis Example 1 was carried out to obtain a paint of polyamine acid A-2 and A-3. Further, in the table, N,N'-bis(1,2-cyclohexanedicarboxylic anhydride-4-yl)carbonyl-1,4-phenylenediamine (manufactured by Nippon Seika Co., Ltd.) was used as the acid anhydride "PPHT". In the case of the diamine "3,4'-ODA", 3,4'-diaminodiphenyl ether (manufactured by Nippon Pure Chemical Co., Ltd.) was used.
[合成例4:聚醯胺酸A-4之合成] [Synthesis Example 4: Synthesis of polyaminic acid A-4]
於容量300mL之分離式燒瓶中,投入下述表3之二胺30mmol後,邊導入氮氣,邊以脫水NMP(N-甲基吡咯啶酮)使二胺溶解。使二胺全部溶解之後,緩慢地加入下述表之酸酐TDA 22.5mmol與PMDA 7.5mmol。以少量的NMP將附著於燒瓶壁之酸酐流入至反應溶液中之後,24小時室溫下攪拌使其反應,得到15質量%之聚醯胺酸(PAA)A-4之塗漆。脫水NMP之投入量係PAA之塗漆量 的75質量%。此外,表中的酸酐「PMDA」方面,係使用均苯四甲酸酐(三菱瓦斯化學公司製)。 After introducing 30 mmol of the diamine of the following Table 3 into a separable flask having a capacity of 300 mL, the diamine was dissolved by dehydrating NMP (N-methylpyrrolidone) while introducing nitrogen gas. After all the diamine was dissolved, 22.5 mmol of the anhydride TDA and 7.5 mmol of PMDA were added slowly in the following table. After the acid anhydride adhering to the wall of the flask was poured into the reaction solution with a small amount of NMP, the mixture was stirred at room temperature for 24 hours to obtain a 15% by mass of a coating of polyacrylic acid (PAA) A-4. The amount of dehydrated NMP is the amount of paint applied by PAA. 75 mass%. Further, in the case of the acid anhydride "PMDA" in the table, pyromellitic anhydride (manufactured by Mitsubishi Gas Chemical Co., Ltd.) was used.
[合成例5:聚醯胺酸A-5之合成] [Synthesis Example 5: Synthesis of polyaminic acid A-5]
除了將酸酐的量變更為TDA 15mmol與PMDA 15mmol之外,其餘係與合成例4同樣地進行,得到聚醯胺酸A-5之塗漆。 The coating of polyaminic acid A-5 was obtained in the same manner as in Synthesis Example 4 except that the amount of the acid anhydride was changed to 15 mg of TDA and 15 mmol of PMDA.
[合成例6:聚醯胺酸A-6之合成] [Synthesis Example 6: Synthesis of polyaminic acid A-6]
除了將酸酐的量變更為TDA 7.5mmol與PMDA 22.5mmol之外,其餘係與合成例4同樣地進行,得到聚醯胺酸A-6之塗漆。 The same procedure as in Synthesis Example 4 was carried out except that the amount of the acid anhydride was changed to 7.5 mmol of TDA and 22.5 mmol of PMDA, and a coating of polyamine acid A-6 was obtained.
[比較合成例1、2:聚醯胺酸R-1、R-2之合成] [Comparative Synthesis Examples 1, 2: Synthesis of Polylysine R-1, R-2]
除了將二胺及酸酐各自變更為下述表4所示之化合物 之外,其餘係與合成例1同樣地進行,合成聚醯胺酸R-1及R-2之塗漆。此外,表中的酸酐「CBDA」方面,係使用1,2,3,4-環丁烷四羧酸二酐(新日本藥業公司製)。 In addition to changing the diamine and the anhydride to each of the compounds shown in Table 4 below The rest of the composition was carried out in the same manner as in Synthesis Example 1, and the paints of polyamine acids R-1 and R-2 were synthesized. Further, in the case of the acid anhydride "CBDA" in the table, 1,2,3,4-cyclobutanetetracarboxylic dianhydride (manufactured by Nippon Pharmaceutical Co., Ltd.) was used.
(實施例1~16、比較例1~3) (Examples 1 to 16 and Comparative Examples 1 to 3)
以表5之組合,相對於聚醯胺酸之塗漆,乃摻合光酸產生劑並使其溶解,得到實施例及比較例之感光性樹脂組成物。此外,表中的光酸產生劑之摻合量,係聚醯胺酸之塗漆的固形分每100質量份之摻合量。 In the combination of Table 5, the photoacid generator was blended and dissolved with respect to the coating of polyamic acid to obtain photosensitive resin compositions of the examples and the comparative examples. Further, the blending amount of the photoacid generator in the table is the blending amount per 100 parts by mass of the solid content of the paint of the polyproline.
[正型圖型膜的形成方法] [Formation method of positive pattern film]
將實施例及比較例之各感光性樹脂組成物,利用攪拌、脫泡裝置來使塗漆濃度均一之後,使用旋轉塗佈機塗佈於矽烷基板上,並以加熱板100℃乾燥30分鐘,獲得膜厚5μm程度之感光性樹脂組成物的乾燥塗膜。於此乾燥塗膜上只對一半配置遮罩(透過率0%),以具備有高壓 水銀燈之桌上型曝光裝置(三永電機公司製)實施1J廣域曝光。接著,以加熱板於表5之條件下,進行曝光後加熱(PEB)。將此以1%NaOH水溶液或1%Na2CO3水溶液顯像,並以水潤洗後在室溫下使其乾燥,獲得正型圖型膜。於表5中顯示光酸產生劑之添加量、與PEB條件之對比評價結果。 Each of the photosensitive resin compositions of the examples and the comparative examples was uniformly coated with a stirring and defoaming device, and then applied to a decylene plate using a spin coater, and dried at 100 ° C for 30 minutes on a hot plate. A dried coating film of a photosensitive resin composition having a film thickness of about 5 μm was obtained. On the dry coating film, only one half of the mask (transmission rate: 0%) was placed, and the 1J wide-area exposure was performed by a desktop exposure apparatus (manufactured by Sanyo Electric Co., Ltd.) equipped with a high-pressure mercury lamp. Next, post-exposure heating (PEB) was carried out under the conditions of Table 5 using a hot plate. This was developed with a 1% aqueous NaOH solution or a 1% aqueous Na 2 CO 3 solution, and washed with water and dried at room temperature to obtain a positive-type film. Table 5 shows the results of the evaluation of the addition amount of the photoacid generator and the PEB conditions.
[對比之評價] [comparative evaluation]
藉由下述式求得上述對比。 The above comparison was obtained by the following formula.
對比=曝光部顯像速度(膜厚μm/顯像時間min)/未曝光部顯像速度(膜厚μm/顯像時間min) Contrast = exposure portion development speed (film thickness μm / development time min) / unexposed portion development speed (film thickness μm / development time min)
膜厚(μm):顯像前的膜厚減去顯像後之膜厚所得的值 Film thickness (μm): the film thickness before development minus the film thickness after development
顯像時間(min):使其浸漬於顯像液中的時間 Imaging time (min): the time it is immersed in the imaging solution
根據對比之值,做如下述之評價。 Based on the value of the comparison, the evaluation is as follows.
◎:10以上 ◎: 10 or more
○:2以上~未達10 ○: 2 or more ~ less than 10
△:1以上~未達2 △: 1 or more ~ not up to 2
×:無(未溶解) ×: none (undesolved)
[微細之正型圖型膜的形成] [Formation of fine positive pattern film]
將實施例8之感光性樹脂組成物利用攪拌、脫泡裝置使塗漆濃度均一之後,使用旋轉塗佈機塗佈於矽烷基板上,並以加熱板100℃使其乾燥30分鐘,得到膜厚5μm程度之感光性樹脂組成物的乾燥塗膜。於此乾燥膜上分別搭載L/S=3/3μm、7/7μm及9/9μm之細線圖型狀的光罩,使用遮罩密著曝光台(Litho Tech Japan)實施300mJ之廣域光曝光。之後以加熱板160℃進行1分鐘之PEB。將此以1%Na2CO3水溶液進行顯像,並以水潤洗後於室溫使其乾燥,得到正型圖型膜。將所得之正型圖型膜的顯微鏡圖像顯示於圖1。又,將段差(線之表面與間距部分之表面的差)顯示於表6。 The photosensitive resin composition of Example 8 was uniformly coated with a stirring and defoaming device, and then applied to a decylene plate using a spin coater, and dried at 100 ° C for 30 minutes to obtain a film thickness. A dried coating film of a photosensitive resin composition of about 5 μm. A thin-line pattern mask of L/S=3/3 μm, 7/7 μm, and 9/9 μm was mounted on the dried film, and a wide-area light exposure of 300 mJ was performed using a mask adhesion exposure stage (Litho Tech Japan). . Thereafter, the PEB was heated at 160 ° C for 1 minute. This was developed with a 1% Na 2 CO 3 aqueous solution, washed with water, and dried at room temperature to obtain a positive pattern film. A microscope image of the obtained positive pattern film is shown in Fig. 1. Further, the step (the difference between the surface of the line and the surface of the pitch portion) is shown in Table 6.
(實施例17~20) (Examples 17 to 20)
[玻璃轉移溫度之評價] [Evaluation of glass transition temperature]
相對於聚醯胺酸A-1、A-4、A-5、A-6之15質量%塗漆3g,乃添加光酸產生劑B-1(三寶化學研究所公司製TS583、DNQ(二偶氮萘并醌))0.0675g,得到實施例17~20之感光性樹脂組成物。將所得之感光性樹脂組成物以塗抹器塗佈於矽晶圓上,以加熱板100℃加熱10分鐘後,再 以200℃熱處理30分鐘,製作硬化膜。將此硬化膜自矽晶圓上剝離,測定玻璃轉移溫度(Tg)。Tg係使用TA Instrument公司製的動態黏彈性測定裝置RSA-G2,於大氣下、50℃~350℃、昇溫速度10℃/min、頻率1Hz之條件下測定。 3 g of paint was applied to 15% by mass of polyaminic acid A-1, A-4, A-5, and A-6, and photoacid generator B-1 was added (TS583, DNQ (two manufactured by Sambo Chemical Research Co., Ltd.) 0.075 g of azonaphthylquinone)), and the photosensitive resin compositions of Examples 17-20 were obtained. The obtained photosensitive resin composition was applied onto a crucible wafer by an applicator, and heated at 100 ° C for 10 minutes, and then heated. The film was heat-treated at 200 ° C for 30 minutes to prepare a cured film. The cured film was peeled off from the tantalum wafer, and the glass transition temperature (Tg) was measured. The Tg was measured under the conditions of 50 ° C to 350 ° C, a temperature increase rate of 10 ° C/min, and a frequency of 1 Hz using a dynamic viscoelasticity measuring apparatus RSA-G2 manufactured by TA Instrument.
由表5、6及圖1所示之結果可知,藉由本發明之感光性樹脂組成物,可獲得對比優異、高解像性之正型圖型膜。特別是即使是L/S=3/3μm的情況下仍然段差大,可得溶解促進效果與阻溶效果,且解像性優異。此外,相對於本發明中之特定的聚醯胺酸,摻合了其他聚醯胺酸的比較例之感光性樹脂組成物,並無法獲得對比,未能形成正型圖型膜。 As is apparent from the results shown in Tables 5 and 6, and the photosensitive resin composition of the present invention, a positive pattern film having excellent contrast and high resolution can be obtained. In particular, even in the case of L/S=3/3 μm, the step difference is large, and a dissolution promoting effect and a blocking effect are obtained, and the resolution is excellent. Further, with respect to the specific polyamine acid of the present invention, the photosensitive resin composition of the comparative example in which other polyglycine was blended was not able to be compared, and a positive pattern film could not be formed.
又,如表5、7中所示,有關(A)聚醯胺酸,藉由使用TDA作為具有環狀脂肪族骨架與芳香族骨架之酸酐且選擇使其共聚之其他的酸酐,係可成為解像性優且賦予耐熱性之材料。 Further, as shown in Tables 5 and 7, the polyamino acid (A) can be obtained by using TDA as an acid anhydride having a cyclic aliphatic skeleton and an aromatic skeleton and optionally copolymerizing it. A material that is excellent in resolution and imparts heat resistance.
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015052679 | 2015-03-16 | ||
JP2015-052679 | 2015-03-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201704876A true TW201704876A (en) | 2017-02-01 |
TWI696893B TWI696893B (en) | 2020-06-21 |
Family
ID=56920084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105107404A TWI696893B (en) | 2015-03-16 | 2016-03-10 | Positive photosensitive resin composition, dry film, hardened material and printed wiring board |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6810024B2 (en) |
KR (1) | KR102597875B1 (en) |
CN (1) | CN107407875B (en) |
TW (1) | TWI696893B (en) |
WO (1) | WO2016147490A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7233189B2 (en) * | 2018-09-21 | 2023-03-06 | 太陽ホールディングス株式会社 | Photosensitive resin composition, dry film, cured product and electronic parts |
WO2023243198A1 (en) * | 2022-06-14 | 2023-12-21 | Jsr株式会社 | Photosensitive resin composition, resin film having pattern, method for producing resin film having pattern, and semiconductor circuit board |
WO2023243199A1 (en) * | 2022-06-14 | 2023-12-21 | Jsr株式会社 | Photosensitive resin composition, patterned resin film, method for producing patterned resin film, and semiconductor circuit substrate |
WO2024100764A1 (en) * | 2022-11-08 | 2024-05-16 | 株式会社レゾナック | Photosensitive resin composition, cured product, and semiconductor element |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093461A (en) | 1975-07-18 | 1978-06-06 | Gaf Corporation | Positive working thermally stable photoresist composition, article and method of using |
JP2003043686A (en) * | 2001-08-03 | 2003-02-13 | Toray Ind Inc | Positive photosensitive resin precursor composition |
JP2003076007A (en) * | 2001-08-31 | 2003-03-14 | Toray Ind Inc | Positive type photosensitive resin precursor composition |
JP4250982B2 (en) * | 2003-03-11 | 2009-04-08 | 日立化成デュポンマイクロシステムズ株式会社 | Positive photosensitive resin composition, pattern manufacturing method, and electronic component |
JP4757741B2 (en) * | 2005-08-24 | 2011-08-24 | 旭化成イーマテリアルズ株式会社 | Photosensitive resin composition and circuit board using the same |
CN101432659B (en) * | 2006-04-28 | 2013-06-12 | 旭化成电子材料株式会社 | Photosensitive resin composition and photosensitive film |
JP4998679B2 (en) * | 2006-05-23 | 2012-08-15 | 住友ベークライト株式会社 | Polyimide precursor copolymer, varnish and positive photosensitive resin composition containing the same, polyimide copolymer, protective film for semiconductor element containing the same, and method for producing fine pattern of polyimide copolymer-containing film |
JP5263464B2 (en) * | 2006-05-23 | 2013-08-14 | 日産化学工業株式会社 | Alicyclic polyimide precursor, positive photosensitive resin composition and cured film thereof |
WO2008133300A1 (en) * | 2007-04-25 | 2008-11-06 | Nissan Chemical Industries, Ltd. | Polyimide precursor, polyimide, and coating solution for under layer film for image formation |
TW201033251A (en) * | 2008-12-15 | 2010-09-16 | Toyoboseki Kabushikikaisha | Positive type photosensitive polyimide resin composition |
JP5201155B2 (en) * | 2009-01-27 | 2013-06-05 | 新日本理化株式会社 | Poly (amide acid-imide) resin |
JP5526766B2 (en) * | 2009-12-25 | 2014-06-18 | Jsr株式会社 | Radiation-sensitive resin composition, interlayer insulating film and method for forming the same |
JP2011227133A (en) * | 2010-04-15 | 2011-11-10 | Asahi Kasei E-Materials Corp | Photosensitive resin composition |
KR20120111072A (en) * | 2011-03-31 | 2012-10-10 | 금호석유화학 주식회사 | Photosensitive composition used for display appratus |
KR101719045B1 (en) * | 2012-05-07 | 2017-03-22 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | Negative photosensitive resin composition, method for manufacturing hardening relief pattern, and semiconductor device |
-
2015
- 2015-11-27 CN CN201580077368.0A patent/CN107407875B/en active Active
- 2015-11-27 WO PCT/JP2015/083465 patent/WO2016147490A1/en active Application Filing
- 2015-11-27 JP JP2017506024A patent/JP6810024B2/en active Active
- 2015-11-27 KR KR1020177028769A patent/KR102597875B1/en active IP Right Grant
-
2016
- 2016-03-10 TW TW105107404A patent/TWI696893B/en active
Also Published As
Publication number | Publication date |
---|---|
CN107407875B (en) | 2021-08-24 |
KR102597875B1 (en) | 2023-11-03 |
JPWO2016147490A1 (en) | 2017-12-28 |
WO2016147490A1 (en) | 2016-09-22 |
JP6810024B2 (en) | 2021-01-06 |
KR20170128440A (en) | 2017-11-22 |
CN107407875A (en) | 2017-11-28 |
TWI696893B (en) | 2020-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5123846B2 (en) | Photosensitive resin composition and photosensitive film | |
TWI696893B (en) | Positive photosensitive resin composition, dry film, hardened material and printed wiring board | |
CN105785713B (en) | Photosensitive resin composition, dry film, cured product, member or product, and adhesive | |
JP4058788B2 (en) | Photosensitive heat resistant resin precursor composition | |
JP4771412B2 (en) | Photosensitive resin and method for producing the same | |
JP7256015B2 (en) | Photosensitive resin compositions, dry films, cured products, and electronic components | |
JP2006285037A (en) | Positive photosensitive resin composition | |
CN105452383B (en) | Photosensitive polymer combination, its embossing pattern film, the manufacturing method of embossing pattern film, the electronic unit comprising embossing pattern film or optical goods and the bonding agent comprising photosensitive polymer combination | |
JP2019032489A (en) | Photosensitive resin composition, dry film, cured product, printed wiring board and semiconductor element | |
TW201800845A (en) | Photosensitive resin composition, dry film, cured product, printed circuit board, and photobase generator | |
WO2021065540A1 (en) | Photosensitive resin composition, dry film, cured object, and electronic component | |
TWI735508B (en) | Photosensitive resin composition, dry film, cured product and printed circuit board | |
JP2021060529A (en) | Positive photosensitive resin composition | |
JP2020160338A (en) | Photosensitive resin composition, dry film, cured product, and electronic component | |
JP7370145B2 (en) | Photosensitive resin composition | |
JPH0792682A (en) | Photosensitive resin composition and production of relief pattern | |
JP7312000B2 (en) | Photosensitive resin compositions, dry films, cured products, and electronic components | |
JP7403268B2 (en) | Photosensitive resin compositions, dry films, cured products, and electronic components | |
JP2019194631A (en) | Positive type photosensitive resin composition, dry film, pattern coated film, and electronic component | |
TW201033251A (en) | Positive type photosensitive polyimide resin composition | |
JP7256057B2 (en) | Photosensitive resin compositions, dry films, cured products, and electronic components | |
JP2011033779A (en) | Positive photosensitive resin composition | |
WO2021225127A1 (en) | Positive photosensitive resin composition, dry film, patterned coating film and electronic component | |
JP2021060458A (en) | Photosensitive resin composition, dry film, cured object, and electronic component | |
TW201413387A (en) | Positive photosensitive resin composition |