TW201704410A - Composition for anisotropic conductive film, anisotropic conductive film and display device using the same - Google Patents

Abstract

Disclosed herein are a composition for anisotropic conductive films, an anisotropic conductive film, and a display device using the same. The composition for anisotropic conductive films includes a copolymer of a fluorene compound and a bisphenol type epoxy compound, an epoxy resin having an epoxy equivalent weight of 150 g/eq or less; a curing agent; and conductive particles. The anisotropic conductive film includes: a copolymer of a fluorene compound and a bisphenol type epoxy compound, and conductive particles. The present invention provide an anisotropic conductive film that exhibits excellent properties in terms of particle capture rate, adhesive strength and connection resistance while allowing rapid curing at low temperature.

Description

Composition for anisotropic conductive film, anisotropic conductive film, and display device using the same

The present invention relates to a composition for an anisotropic conductive film, an anisotropic conductive film, and a display device using the same.

In general, an anisotropic conductive film (ACF) refers to a film-shaped adhesive prepared by dispersing conductive particles in a resin such as an epoxy resin. The anisotropic conductive film is composed of a polymer layer having electrical anisotropy and adhesion, and exhibits conductive characteristics in the film thickness direction and exhibits insulating properties in the sheet direction thereof. When the anisotropic conductive film is heated and compressed under a certain condition when disposed between the circuit boards, the circuit ends of the circuit board are electrically connected to each other via the conductive particles and the insulating adhesive resin fills between the adjacent electrodes. The space is such that the conductive particles are separated from each other, thereby providing high insulation efficiency.

With the recent development of high-resolution displays with thin display panels, techniques for capturing as many conductive particles as possible in a minimum connection area have been studied. In order to increase the trapping rate of conductive particles, various attempts have been made, such as increasing the density of conductive particles or suppressing fluid flow. However, the problems faced by such methods are a decrease in the insulation resistance between adjacent electrodes or a decrease in the adhesion strength due to an increase in the modulus after curing.

Therefore, there is a need to develop an anisotropic conductive film which exhibits excellent adhesion and insulation resistance to reduce the possibility of electrical short between electrodes while effectively suppressing fluid flow.

Embodiments of the present invention provide an anisotropic conductive film which exhibits excellent characteristics in terms of particle trapping rate, adhesive strength, and connection resistance while allowing rapid curing at a low temperature.

According to an aspect of an embodiment of the present invention, there is provided a composition for an anisotropic conductive film comprising: a copolymer of a ruthenium compound and a bisphenol type epoxy compound; having 150 g/eq or less; Epoxy equivalent epoxy resin; curing agent; and conductive particles.

According to one aspect of an embodiment of the invention, the ruthenium compound comprises two or more hydroxyl groups.

According to an aspect of the embodiment of the present invention, the ruthenium compound has a structure represented by Formula 1: [Formula 1] Wherein each R is independently alkyl, alkoxy, aryl or cycloalkyl; each m is independently an integer from 0 to 4; and each n is independently an integer from 1 to 5.

According to an aspect of the embodiment of the present invention, the bisphenol type epoxy compound comprises at least one selected from the group consisting of bisphenol A type epoxy compound, bisphenol F type epoxy compound, bisphenol AD type epoxy compound, bisphenol E type epoxy compound, and bisphenol S type epoxy compound.

According to an aspect of the embodiment of the present invention, the copolymer has at least one of the structures represented by the following Formulas 2 to 4: [Formula 2] ; [Formula 3] ; and [Formula 4] Wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are each independently hydrogen, C ₁ to C ₆ alkyl, halogen atom or hydroxyl group; R ₅ and R ₆ are the same or different from each other and each Independently hydrogen, C ₁ to C ₆ alkyl, halogen atom, C ₆ to C ₂₀ aromatic ring or C ₆ to C ₂₀ alicyclic ring; and n is an integer from 1 to 100.

According to an aspect of an embodiment of the present invention, the copolymer has a weight average molecular weight of from 5,000 g/mol to 50,000 g/mol.

According to one aspect of an embodiment of the present invention, the copolymer has a glass transition temperature (Tg) of from 140 °C to 200 °C.

According to an aspect of an embodiment of the present invention, the epoxy resin having an epoxy equivalent of 150 g/eq or less is 150 g epoxy resin, bisphenol epoxy resin or aromatic epoxy resin.

According to an aspect of the embodiment of the present invention, the composition for an anisotropic conductive film contains: 20 wt% to 70 wt% copolymer, based on the total amount of the composition for the anisotropic conductive film, in terms of solid content 20 wt% to 50 wt% epoxy resin having an epoxy equivalent weight of 150 g/eq or less; 0.5 wt% to 10 wt% curing agent; and 1 wt% to 30 wt% conductive particles .

According to another aspect of the present invention, there is provided an anisotropic conductive film comprising: a copolymer of a ruthenium compound and a bisphenol type epoxy compound, and conductive particles having an adhesion strength of 10 MPa or more and 10 MPa or less According to the particle capture rate of 30% or more than 30% calculated by the following Equation 1, the particle capture rate is initially compressed by using the anisotropic conductive film at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa for 1 second. 3 seconds, followed by main compression at 120 ° C to 160 ° C and 60 MPa to 80 MPa for 3 seconds to 6 seconds to measure: [Equation 1] Particle capture rate (%) = (preliminary compression and connection after primary compression) the conductive connection portion before the number of particles per unit area in section (mm ²⁾ number of conductive particles / per unit area in the preliminary compression (mm ²⁾ of) × 100.

According to another aspect of the invention, the ruthenium compound comprises two or more hydroxyl groups.

According to another aspect of the present invention, the ruthenium compound has a structure represented by Formula 1: [Formula 1] Wherein each R is independently alkyl, alkoxy, aryl or cycloalkyl; each m is independently an integer from 0 to 4; and each n is independently an integer from 1 to 5.

According to another aspect of the invention, the copolymer has at least one of the structures represented by the following formulas 2 to 4: [Formula 2] ; [Formula 3] ; and [Formula 4] Wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are each independently hydrogen, C ₁ to C ₆ alkyl, halogen atom or hydroxyl group; R ₅ and R ₆ are the same or different from each other and each Independently hydrogen, C ₁ to C ₆ alkyl, halogen atom, C ₆ to C ₂₀ aromatic ring or C ₆ to C ₂₀ alicyclic ring; and n is an integer from 1 to 100.

According to another aspect of the present invention, the anisotropic conductive film is used in a chip-on-glass (COG) or chip-on-film (COF) mounting manner.

According to another aspect of the present invention, the anisotropic conductive film has a minimum melt viscosity of from 5,000 Pa·s to 20,000 Pa·s at 30 ° C to 200 ° C according to the ARES measurement.

According to another aspect of the present invention, the anisotropic conductive film measured after preliminary compression and main compression of the anisotropic conductive film has an initial connection resistance of 1.0 Ω or less.

According to another aspect of the present invention, the non-isotropic conductive film is subjected to preliminary compression and main compression, and then the non-isotropic conductive film is maintained at 85 ° C and 85% RH for 500 hours. The isotropic conductive film has a reliability test after 3 Ω or less than 3 Ω.

According to another aspect of the present invention, the anisotropic conductive film calculated according to Equation 2 has a curing rate of 80% or more: [Equation 2] Curing rate (%) = [(H _{0 -} H ₁ ) /H ₀ ]×100 where H ₀ is the area under the curve obtained by differential scanning calorimetry according to the temperature in the range of -50 ° C to 250 ° C under a nitrogen atmosphere at an increasing rate of 10 ° C / min. The measured initial heat of the anisotropic conductive film; and H ₁ is the amount of heat of the anisotropic conductive film measured after leaving it on the hot plate at 130 ° C for 5 seconds.

According to another aspect of the present invention, there is provided a display device comprising: a first connecting member having a first electrode; a second connecting member having a second electrode; and an anisotropic conductive film as set forth herein, The anisotropic conductive film is disposed between the first connecting member and the second connecting member and connects the first electrode and the second electrode to each other.

Hereinafter, embodiments of the invention will be described in detail. Descriptions of details that are apparent to those of ordinary skill in the art are omitted herein.

One embodiment of the present invention relates to a composition for an anisotropic conductive film comprising: a copolymer of a ruthenium compound and a bisphenol type epoxy compound; having an epoxy equivalent of 150 g/eq or less; Epoxy resin; curing agent; and conductive particles.

The composition for an anisotropic conductive film according to this embodiment may contain a copolymer of a ruthenium compound and a bisphenol type epoxy compound as a binder resin.

The ruthenium compound contains a ruthenium structure and may contain two or more hydroxyl groups for copolymerization with a bisphenol type epoxy compound.

In one embodiment, the hydrazine compound may be a compound having the structure represented by Formula 1. [Formula 1] Wherein each R is independently alkyl, alkoxy, aryl or cycloalkyl; each m is independently an integer from 0 to 4; and each n is independently an integer from 1 to 5.

The copolymer contains units derived from a ruthenium compound, thereby improving the heat resistance of the anisotropic conductive film.

For example, the bisphenol type epoxy compound may be, but not limited to, at least one selected from the group consisting of bisphenol A type epoxy compound, bisphenol F type epoxy compound, bisphenol AD type epoxy compound, bisphenol E type epoxy compound, bisphenol S type epoxy compound, and combinations thereof. In one embodiment, a bisphenol A type epoxy compound or a bisphenol F type epoxy compound may be used.

Although the method of preparing the copolymer of the cerium compound and the bisphenol type epoxy compound via copolymerization is not particularly limited, the copolymer may be prepared by dissolving a cerium compound and a bisphenol type epoxy compound in a suitable solvent, and adding a polymerization catalyst to In the mixture, the mixture is stirred at 100 ° C to 150 ° C for 10 hours to 40 hours, and the resulting compound is washed with a suitable detergent such as methanol and water, followed by drying the resulting precipitate.

Examples of the solvent may include propylene glycol monomethyl ether acetate (PGMEA), dimethylformamide (DMF), and tetrahydrofuran (THF). In particular, propylene glycol monomethyl ether acetate (PGMEA) can be used.

Examples of the polymerization catalyst may include an acid anhydride, an amine, an imidazole, an anthracene, and a cationic compound. These may be used singly or in the form of a mixture thereof.

In particular, the polymerization catalyst may include an imidazole catalyst such as 2-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-ethylimidazole, 2-iso Propyl imidazole, 2-phenyl-4-benzylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2 -Phenyl-4-benzyl-5-hydroxymethylimidazole, 4,4'-methylenebis-(2-ethyl-5-methylimidazole), 2-aminoethyl-2-methyl Imidazole and 1-cyanoethyl-2-phenyl-4,5-di(cyanoethoxymethyl)imidazole; phosphonium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic hydrazines Salts, aromatic iodonium salts, strontium salts, pyridinium salts and selenium salts; complexes such as metal aromatic hydrocarbon complexes and stanol/aluminum complexes; and tosylate groups (such as benzoin toluene) Acidate and o-nitrobenzyltoluenesulfonate) and have a function of capturing electrons. More specifically, an imidazole-based polymerization catalyst such as 2-methylimidazole, 2-ethylimidazole or 2-phenyl-4,5-dihydroxymethylimidazole can be used.

In one embodiment, the copolymer may be a compound having at least one of the structures represented by Formulas 2 to 4: [Formula 2] ; [Formula 3] ; and [Formula 4] Wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are each independently hydrogen, a C ₁ to C ₆ alkyl group, a halogen atom or a hydroxyl group; and R ₅ and R ₆ are the same or different from each other and each Independently hydrogen, C ₁ to C ₆ alkyl, halogen atom, C ₆ to C ₂₀ aromatic ring or C ₆ to C ₂₀ alicyclic ring; and n is an integer from 1 to 100.

The copolymer comprises a structure derived from a ruthenium compound and a bisphenol type epoxy compound as a repeating unit, wherein the ruthenium structure gives the copolymer high heat resistance, and a carbon main chain such as -CH ₂ -, -CH(CH ₃ )-, -C(CH ₂ )- or -C(CH ₃ ) ₂ -, or a flexible backbone, such as -SO ₂ between the aromatic rings of the bisphenol type epoxy compound, such that the copolymer has a high glass transition temperature Tg, So that the copolymer exhibits hardness at high temperatures. Further, the copolymer used in the composition for an anisotropic conductive film improves the storage stability of the anisotropic conductive film formed of the composition.

The copolymer may have a glass transition temperature of from 140 °C to 200 °C. In particular, the copolymer has a glass transition temperature of from 150 ° C to 180 ° C, more specifically from 160 ° C to 170 ° C. Within this range, the anisotropic conductive film made of the composition for an anisotropic conductive film containing a copolymer has a suitable fluidity and thus can improve the capturing ratio of the conductive particles when used together with the conductive particles.

The weight average molecular weight of the copolymer may range from 5,000 g/mol to 50,000 g/mol, in particular from 10,000 g/mol to 30,000 g/mol. Within this range, an anisotropic conductive film made of a composition for an anisotropic conductive film containing a copolymer can exhibit a suitable strength.

In terms of solid content, the copolymer may be present in an amount of from 20% by weight (% by weight) to 70% by weight based on the total weight of the composition for the anisotropic conductive film. In particular, the copolymer may be present in an amount from 30 wt% to 60 wt%, more specifically from 35 wt% to 55 wt%. Within this range, the composition for an anisotropic conductive film can have improved fluidity and adhesion.

In another embodiment, the composition for an anisotropic conductive film may further contain other binder resins in addition to the copolymer.

Examples of other binder resins may include polyimide resins, polyamide resins, phenoxy resins, polymethacrylate resins, polyacrylate resins, polyurethane resins, polyester resins, polyesters. Urethane resin, polyvinyl butyral resin, styrene-butadiene-styrene (SBS) resin and its epoxy-modified resin, styrene-ethylene-butyl Styrene-ethylene-butylene-styrene (SEBS) resin and modified resin thereof, acrylonitrile butadiene rubber (NBR) and hydrogenated resin thereof, and the like. In the composition for an anisotropic conductive film, these may be used singly or in combination.

When the composition for the anisotropic conductive film further contains a binder resin other than the copolymer, the other binder resin may be used in terms of the solid content, based on the total amount of the composition for the anisotropic conductive film. It is present in an amount of 1 wt% to 20 wt%.

The epoxy resin having an epoxy equivalent of 150 g/eq or less than 150 g/eq is not particularly limited and may be, without limitation, any epoxy resin having an epoxy equivalent weight of 150 g/eq or less. Elected. Specifically, an epoxy resin having an epoxy equivalent of from 80 g/eq to 150 g/eq, more specifically, an epoxy resin having an epoxy equivalent of from 90 g/eq to 145 g/eq may be used. Within this range of epoxy equivalents, the anisotropic conductive film can exhibit good viscosity and fluidity while allowing rapid curing at low temperatures.

Examples of the epoxy resin may include a bisphenol type epoxy compound such as bisphenol A type epoxy resin, bisphenol A type epoxy acrylate resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, double a phenol E type epoxy resin and a bisphenol S type epoxy resin; an aromatic epoxy compound such as a polyglycidyl ether epoxy resin, a polyglycidyl epoxy resin, and a naphthalene epoxy resin; an alicyclic epoxy compound; a novolak type epoxy compound, such as a cresol novolak type epoxy resin and a phenol novolak type epoxy resin; a glycidylamine epoxy compound; a glycidyl ester epoxy compound; a biphenyl diglycidyl ether epoxy compound, and Its analogues. In particular, the epoxy resin may be an alicyclic epoxy resin, a bisphenol epoxy resin or an aromatic epoxy resin, and more specifically, may be an alicyclic epoxy resin. The epoxy structure in the cycloaliphatic epoxy resin is positioned close to the alicyclic ring to allow for a rapid ring opening reaction and thus cure faster than other epoxy resins. The cycloaliphatic epoxy resin may be selected from any cycloaliphatic epoxy resin attached to the alicyclic ring via direct coupling or may be, without limitation, using an epoxy group structure linked via other linking groups.

In one embodiment, an epoxy resin having an epoxy equivalent of 150 g/eq or less may comprise a liquid epoxy resin. The epoxy resin containing a liquid epoxy resin can make the anisotropic conductive film made of the composition for an anisotropic conductive film containing an epoxy resin fluid, while allowing the non-isotropic conductive film to be rapidly cured.

In terms of solid content, the epoxy resin may be 20 wt% to 50 wt%, specifically 25 wt% to 45 wt%, more specifically 30 wt%, based on the total amount of the composition for the anisotropic conductive film. % to 40 wt% is present. Within this range, the epoxy resin allows sufficient curing to occur and can be made to an anisotropic composition made of an anisotropic conductive film containing an epoxy resin in terms of adhesion, appearance, and reliability after test. The conductive film provides good properties.

In one embodiment, the composition for anisotropic conductive film may further comprise an epoxy having greater than 150 g/eq, in addition to the epoxy resin having an epoxy equivalent weight of 150 g/eq or less. Equivalent epoxy resin.

The composition for an anisotropic conductive film contains a copolymer and an epoxy resin having an epoxy equivalent of 150 g/eq or less, thereby improving the trapping rate of the conductive particles by adjusting the fluidity at a high temperature, thereby Achieve rapid cure at low temperatures and provide good properties in terms of adhesion strength and connection resistance. When the composition further comprises an epoxy resin having an epoxy equivalent weight of more than 150 g/eq, the epoxy resin may be 1 wt% in terms of solid content, based on the total amount of the composition for the anisotropic conductive film. 10 wt% is present.

The conductive particles are not particularly limited and may be selected from typical conductive particles used in the art. Examples of the conductive particles may include: metal particles including Au, Ag, Ni, Cu, and solder; carbon particles; by coating polymer resin particles (such as polyethylene) with a metal (including Au, Ag, Ni, and the like) , the obtained particles of polypropylene, polyester, polystyrene, polyvinyl alcohol and modified resin thereof; and insulating particles obtained by subjecting the surface of the particles obtained by coating the polymer resin particles to a metal. The conductive particles may have a particle diameter of, for example, 1 μm to 20 μm, specifically 1 μm to 10 μm, depending on the circuit pitch.

In terms of solid content, the conductive particles may be from 1 wt% to 30 wt%, specifically from 10 wt% to 25 wt%, more specifically 15 wt%, based on the total amount of the composition for the anisotropic conductive film. It is present in an amount of up to 20 wt%. Within this range, the conductive particles can be easily compressed between the terminals to ensure stable connection reliability while reducing the connection resistance via improvement in conductivity.

As the curing agent, any curing agent capable of curing the epoxy resin may be used, and examples of the curing agent may include an acid anhydride, an amine, an imidazole, an anthracene, and a cationic curing agent. These can be used singly or in combination.

In particular, the curing agent can be a cationic curing agent such as ammonium hexafluoride / hydrazine.

Since the curing agent is used in combination with an epoxy resin at room temperature, the curing agent must exhibit no reactivity with the epoxy resin at room temperature and exhibit an active reaction with the epoxy resin at a predetermined temperature or higher. The activity of the curing agent properties. Thus, any, but not limited to, any typical cationic curing agent capable of producing a cation having thermal activation energy can be used. For example, a cationic latent curing agent can be used.

In particular, examples of the cationic latent curing agent may include an onium salt compound such as an aromatic diazonium salt, an aromatic sulfonium salt, an aliphatic sulfonium salt, an aromatic iodine aluminum salt, a cesium salt, a pyridinium salt, and a selenium sulfonium salt. Complex compounds, such as metal aromatic hydrocarbon complexes and stanol/aluminum complexes; and containing tosylate groups (such as benzoin tosylate and o-nitrobenzyltoluenesulfonate) and having electron capture capabilities Compound. More specifically, a ruthenium salt compound which efficiently generates a cation such as an aromatic sulfonium salt compound or an aliphatic sulfonium salt compound can be used.

In addition, when such a cationic latent curing agent forms a salt structure, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenylborate and the like can be used as a relative ion to form a reactive side. salt.

The solidifying agent may be present in an amount of from 0.5% by weight to 10% by weight based on the total of the components of the non-isotropic conductive film in terms of solid content. In particular, the curing agent may be present in an amount from 2 wt% to 7 wt%. Within this range, the curing agent can ensure a sufficient curing reaction, and can provide good characteristics in terms of adhesion strength and reliability after bonding by forming a suitable molecular weight.

The composition for an anisotropic conductive film may further contain additives such as a polymerization inhibitor, an antioxidant, and a heat stabilizer to impart other characteristics to the anisotropic conductive film without deteriorating its basic characteristics. The additive may be present in an amount of from 0.01% by weight to 10% by weight based on the total of the components of the non-isotropic conductive film in terms of solid content.

The polymerization inhibitor can be selected from the group consisting of hydroquinone, hydroquinone monomethyl ether, p-benzoquinone, phenothiazine, and mixtures thereof. Antioxidants may include phenolic compounds, hydroxycinnamate compounds, and the like. In particular, the antioxidant may include 肆-(methylene-(3,5-di-t-butyl-4-hydroxycinnamate)methane, 3,5-bis(1,1-dimethylethyl) Base)-4-hydroxyphenylpropionic acid thiol di-2,1-ethanediyl ester and analogs thereof.

Next, an anisotropic conductive film according to another embodiment of the present invention will be described.

The anisotropic conductive film comprises: a copolymer of a ruthenium compound and a bisphenol type epoxy compound, and has an adhesion strength of 10 MPa or more and a particle capture ratio of 30% or more than 30% calculated according to the following Equation 1. Wherein the particle capture rate is preliminary compression of the anisotropic conductive film at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa for 1 second to 3 seconds, followed by 120 ° C to 160 ° C and 60 MPa to 80 MPa The measurement was performed after the main compression was performed for 3 seconds to 6 seconds.

The copolymer of the ruthenium compound and the bisphenol type epoxy compound may be the same as the copolymer of the composition according to the above examples.

The anisotropic conductive film may have a particle capture ratio of 30% or more than 30% calculated according to the following Equation 1, wherein the particle capture ratio is at 50 ° C to 80 ° C and 1.0 MPa to 3.0 for the anisotropic conductive film. The initial compression was carried out under MPa conditions for 1 second to 3 seconds, followed by main compression at 120 ° C to 160 ° C and 60 MPa to 80 MPa for 3 seconds to 6 seconds: [Equation 1] Particle capture rate (%) = (initial compression and per unit area (mm ²⁾ of the number of particles of the conductive connection portion before the main connection portion after compression per unit area (mm ²⁾ number of conductive particles / preliminary compression) × 100.

In particular, the anisotropic conductive film may have a particle capture ratio of 40% or more, more specifically 50% or more than 50%. Within this range, the anisotropic conductive film can effectively suppress the flow of the conductive layer to allow the conductive particles to be sufficiently held in place on the anisotropic conductive film, thereby improving the conductivity and suppressing the leakage of the conductive particles. Reduce electrical shorts between the terminals.

The particle capture rate can be measured by, without limitation, any method. For example, in the obtained anisotropic conductive film, the number of conductive particles/unit area (mm ² ) in the joined portion before the preliminary compression is counted using an automated particle counter. Next, the anisotropic conductive film is placed between the first connecting member and the second connecting member and is subjected to preliminary compression at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa for 1 second to 3 seconds, followed by 120 ° C. The main compression was carried out at 160 ° C and 60 MPa to 80 MPa for 3 seconds to 6 seconds. The number of conductive particles per unit area (mm ² ) in the joined portion was then counted using an automated particle counter, and then the particle capture rate was calculated according to Equation 1.

The anisotropic conductive film may have an adhesive strength of 10 MPa or more, particularly 20 MPa or more, more specifically 30 MPa or more than 30 MPa, as measured after preliminary compression and main compression. In the range of the adhesion strength of the anisotropic conductive film, a display device using an anisotropic conductive film can be used for a long period of time.

The adhesion strength can be measured by, without limitation, any typical method. For example, the prepared anisotropic conductive film is placed on a glass substrate comprising indium tin oxide (ITO) having a bump area of 1200 μm ² and a thickness of 2000 Å. The circuit is subjected to preliminary compression for 1 second to 3 seconds at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa. Next, in the case where the release film is removed from the anisotropic conductive film, an IC wafer having a bump area of 1200 μm ² and a thickness of 1.5 T is placed on the anisotropic conductive film, followed by 120 ° C. The sample was prepared by performing main compression for 3 seconds to 6 seconds at 160 ° C and 60 MPa to 80 MPa. Next, the adhesion strength of the sample was tested using a peel strength tester (Bond Tester Dage Series-4000) at a maximum load of 200 kgf at a test speed of 100 μm/sec.

The anisotropic conductive film may further comprise an epoxy resin, conductive particles, and a curing agent having an epoxy equivalent of 150 g/eq or less. These components may be the same as those of the above examples.

In one embodiment, the anisotropic conductive film may be used in a wafer on-wafer (COG) or on-film (COF) mounting.

The anisotropic conductive film may have a minimum melt viscosity of from 5,000 Pa·s to 20,000 Pa·s, specifically from 6,000 Pa·s to 10,000 Pa·s at 30 ° C to 200 ° C, as measured by an ARES rheometer Measurement. Within this range, the anisotropic conductive film can exhibit sufficient adhesive strength, has improved preliminary compression characteristics, and improves connection reliability through sufficient filling of the insulating layer between the terminals.

The minimum melt viscosity can be measured by, without limitation, any typical method. For example, the minimum melt viscosity of an anisotropic conductive film can be achieved using an ARES G2 rheometer (TA Instruments) at a sample thickness of 150 μm, a temperature increase rate of 10 ° C/min, a 5% stress, and 10 rad/ The frequency of sec is measured under conditions of a temperature range of 30 ° C to 200 ° C.

In addition, the anisotropic conductive film may have a curing rate of 80% or more, specifically 85% or more, more specifically 90% or more than 90%, as calculated according to Equation 2: [Equation 2] Curing rate (%) = [(H _{0 -} H ₁ ) / H ₀ ] × 100 where H ₀ is the initial heat of the anisotropic conductive film, such as at a temperature of -50 ° C to 250 ° C under a nitrogen atmosphere Within the range, measured at an increasing temperature rate of 10 ° C / min, by the area under the curve obtained by differential scanning calorimetry (DSC, TA Instruments, Q20); and H ₁ is the heat of the anisotropic conductive film , measured after holding on a hot plate at 130 ° C for 5 seconds.

This cure rate range corresponds to rapid cure, for example at a low temperature of 130 ° C, for a short period of 5 seconds, and thus to the low temperature rapid cure characteristics of the anisotropic conductive film.

In some embodiments, the anisotropic conductive film may have an initial connection resistance of 1.0 Ω or less, such as in the case of an anisotropic conductive film at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa. The compression was performed for 1 second to 3 seconds, followed by main compression at 120 ° C to 160 ° C and 60 MPa to 80 MPa for 3 seconds to 6 seconds. In particular, the anisotropic conductive film may have an initial connection resistance of 0.7 Ω or less, more specifically 0.5 Ω or less than 0.5 Ω.

In some embodiments, the anisotropic conductive film may have a reliability test after 3 Ω or less than 3 Ω, such as preliminary compression and main compression of the anisotropic conductive film as above, followed by 85 ° C and 85 Measured after 500 hours of % RH (relative humidity). In particular, the anisotropic conductive film may have a reliability test connection resistance of 2 Ω or less, more specifically 1 Ω or less than 1 Ω.

In the range of the connection resistance after the reliability test after the initial connection resistance, the anisotropic conductive film can have improved connection reliability and can maintain long-term storage stability while being used.

The initial connection resistance and reliability test post connection resistance can be measured by, without limitation, any typical method. For example, the prepared anisotropic conductive film is placed on a glass substrate comprising an indium tin oxide (ITO) circuit having a bump area of 1200 μm ² and a thickness of 2000 Å and at 50 Initial compression is carried out at °C to 80 ° C and 1.0 MPa to 3.0 MPa for 1 second to 3 seconds. Next, in the case where the release film is removed from the anisotropic conductive film, an IC wafer having a bump area of 1200 μm ² and a thickness of 1.5 T is placed on the anisotropic conductive film, followed by 120 ° C. The sample was prepared by performing main compression for 3 seconds to 6 seconds at 160 ° C and 60 MPa to 80 MPa. The resistance between the four points on the sample was then measured by a 4-point detection method and defined as the initial resistance. Subsequently, the sample prepared by the main compression as above was kept at 85 ° C and 85% RH for 500 hours, and the resistance of the test sample was measured by the same method and defined as the connection resistance after the reliability test. The resistance meter applies 1 mA and is measured at this voltage to calculate the average resistance.

In one embodiment, the anisotropic conductive film may have a structure in which an insulating layer is stacked on one or both surfaces of the conductive layer. In particular, the anisotropic conductive film may have a two-layer structure in which an insulating resin is stacked on the conductive layer, a three-layer structure in which the insulating layers are respectively stacked on both surfaces of the conductive layer, or an insulating layer and a conductive layer therein A four-layer or multi-layer structure stacked in four or more than four layers.

As used herein, the term "stacked" means that a particular layer is formed on one surface of another layer and can be used interchangeably with coating or lamination. In an anisotropic conductive film having a two-layer structure in which a conductive layer and an insulating layer are respectively formed, a large amount of inorganic particles such as cerium oxide does not interfere with compression of the conductive particles and thus does not affect electrical conductivity, and at the same time, a conductive layer And the insulating layers are formed separately without affecting the fluidity of the composition for the anisotropic conductive film, thereby allowing the anisotropic conductive film to exhibit controllable fluidity.

Another embodiment of the present invention is directed to a method of making an anisotropic conductive film. No special equipment or equipment is required to form the anisotropic conductive film. For example, the anisotropic conductive film can be produced by dissolving a composition for an anisotropic conductive film according to an embodiment of the present invention in an organic solvent such as toluene, and stirring the dissolved composition at a specific rate. For a period of time to prevent the conductive particles from being powdered, the composition is applied to the release film to a specific thickness of, for example, 10 μm to 50 μm, and the composition is dried for a predetermined period of time to volatilize an organic solvent such as toluene.

Next, a display device according to another embodiment of the present invention will be described.

The display device includes a first connecting member including a first electrode; a second connecting member including a second electrode; and a non-disposed between the first connecting member and the second connecting member and connecting the first electrode and the second electrode An isotropic conductive film in which the anisotropic conductive film is an anisotropic conductive film according to an embodiment of the present invention.

The first connecting member or the second connecting member includes an electrode that requires electrical connection. In particular, the first connecting member and the second connecting member may be a glass substrate, a plastic substrate, a printed wiring board, a ceramic wiring board, a flexible wiring board, a germanium semiconductor wafer, an IC wafer, a driver IC wafer, and the like. Electrodes such as indium tin oxide (ITO) and indium zinc oxide (IZO) are formed thereon. More specifically, one of the first connection member and the second connection member may be an IC wafer or a driver IC wafer, and the other may be a glass substrate.

Referring to FIG. 1, a semiconductor device 30 according to an embodiment of the present invention includes a first connecting member 50 including a first electrode 70, a second connecting member 60 including a second electrode 80, and a first connecting member 50 and a first connecting member. The anisotropic conductive film 10 between the two connecting members 60 and including the conductive particles 3, the first electrode 70 and the second electrode 80 are connected to each other via the conductive particles 3.

The invention will be described in more detail below with reference to some examples. However, it is to be understood that these examples are provided by way of illustration only and should not be construed as limiting the invention.

For the sake of clarity, descriptions of details that are apparent to those of ordinary skill in the art are omitted herein. EXAMPLES Preparation Example 1 to Preparation Example 4 : Preparation of Copolymer Preparation Example 1 : Preparation of Copolymer 1

14 g of 9,9'-bis(4-hydroxyphenyl)anthracene and 16 g of bisphenol F-type epoxy resin (YSLV-80XY, Kukdo Chemical) were dissolved in 30 g of PGMEA, and 0.1 g of 2-methylimidazole was added to the solution, followed by stirring at 110 ° C for 24 hours. Subsequently, the obtained substance was washed with methanol and water, and then the resulting precipitate was dried, whereby a copolymer 1 having the following structure (Tg: 170 ° C, weight average molecular weight: 25,000 g/mol) was prepared. [Copolymer 1] Preparation Example 2 : Preparation of Copolymer 2

15 g of 9,9'-bis(4-hydroxyphenyl)anthracene and 10 g of bisphenol A type epoxy resin (JER834, Mitsubishi Chemical Co., Ltd.) were dissolved in 30 g of PGMEA and applied to the solution. 0.1 g of 2-methylimidazole was added thereto, followed by stirring at 110 ° C for 24 hours. Subsequently, the obtained substance was washed with methanol and water, and then the resulting precipitate was dried, whereby a copolymer 2 (Tg: 165 ° C, weight average molecular weight: 20,000 g/mol) having the following structure was prepared. [Copolymer 2] Preparation Example 3 : Preparation of Copolymer 3

15 g of 9,9'-bis(4-hydroxyphenyl)phosphonium and 10 g of 1,1'-bis(4-hydroxyphenyl)methane were dissolved in 30 g of PGMEA as a bisphenol F-type epoxy resin, and 0.1 g of 2-methylimidazole was added to the solution, followed by stirring at 110 ° C for 24 hours. Subsequently, the obtained substance was washed with methanol and water, and then the resulting precipitate was dried, whereby a copolymer 3 having the following structure (Tg: 165 ° C, weight average molecular weight: 22,000 g/mol) was prepared. [Copolymer 3] Example and comparison example example 1

A composition for an anisotropic conductive film was prepared by mixing the following: 40 parts by weight of the copolymer 1 prepared in Example 1 was prepared as a binder resin, serving as a matrix for film formation; 35 parts by weight of 130 g/eq epoxy equivalent epoxy resin (Daicel celloxide 2021P); 5 parts by weight of heat curing latent curing agent (HX3741, Asahi Chemical, Japan), and 20 parts by weight of insulating conductive particles ( AUL-704, an average particle diameter of 4 μm, was synthesized as a filler by the Japanese Sekisui Seiki Co., Ltd. (SEKISUI, Japan) to impart conductivity to the anisotropic conductive film. The anisotropic conductive film was coated with a composition onto the release film, and then the solvent was volatilized in a drier at 70 ° C for 5 minutes, thereby obtaining a 15 μm thick anisotropic conductive film. Example 2

The anisotropic conductive film of Example 2 was prepared by the same method as Example 1 under the same conditions as in Example 1, except that the copolymer 2 prepared in Preparation Example 2 was used as the binder resin and the use was carried out. An epoxy equivalent of epoxy resin 2 (HP4032D, Danippon Ink) of g/eq was used as the epoxy resin. Example 3

The anisotropic conductive film of Example 3 was prepared by the same method as Example 1 under the same conditions as in Example 1, except that the copolymer 3 prepared in Preparation Example 2 was used as the binder resin and the use was 97. An epoxy equivalent of epoxy resin 3 (JER 630 ESD, Japan Epoxy Resin) of g/eq was used as the epoxy resin. Comparative example 1

The anisotropic conductive film of Comparative Example 1 was prepared by the same method as in Example 1 under the same conditions as in Example 1, except that a biphenyl fluorene type binder resin (FX-293, Japan Steel Chemical Co., Ltd.) was used. Nippon Steel Chemical Co., Tg: 165 ° C, weight average molecular weight: 45,000 g/mol) as a binder resin. Comparative example 2

The anisotropic conductive film of Comparative Example 2 was prepared by the same method as Example 1 under the same conditions as in Example 1, except that an epoxy resin having an epoxy equivalent of 180 g/eq (YDPN 638, Guodu Chemical Company) as an epoxy resin. Experimental example

The anisotropic conductive films prepared in Examples 1 to 3 and Comparative Example 1 and Comparative Example 2 were evaluated in terms of minimum melt viscosity, solidification rate, particle trapping ratio, adhesive strength, and connection resistance by the following methods. The evaluation results are shown in Table 1. Experimental Example 1 : Measurement of Minimum Melt Viscosity

ARES G2 rheometer (TA instrument) at a sample thickness of 150 μm, a temperature increase rate of 10 ° C/min, a 5% stress and a frequency of 10 rad/sec, and a temperature range of 30 ° C to 200 ° C The company measures the minimum melt viscosity of various anisotropic conductive films prepared in the examples and comparative examples. Experimental Example 2 : Measurement of curing rate

An aliquot of 1 mg of various anisotropic conductive films prepared in the examples and comparative examples was subjected to an increasing rate of temperature at a temperature of -50 ° C to 250 ° C under a nitrogen atmosphere at a temperature of 10 ° C / min. The initial heat (H ₀ ) of the test sample was measured by the area under the curve obtained by differential scanning calorimetry (DSC, TA Instruments, Q20). Next, the sample was held on a 130 ° C hot plate for 5 seconds, and then the heat (H ₁ ) was measured in the same manner. The solidification rate was calculated according to the following Equation 2: [Equation 2] Curing rate (%) = [(H _{0 -} H ₁ ) / H ₀ ] × 100. Experimental Example 3 : Measurement of particle capture rate

In the various anisotropic conductive films prepared in the examples and comparative examples, the number of conductive particles/unit area (mm ² ) in the joined portion before the preliminary compression was counted using an automated particle counter (ZOOTUS).

Next, an anisotropic conductive film was placed on a glass substrate (manufacturer: NeoView Kolon) including an indium tin oxide (ITO) circuit having a bump area of 1200 μm ² and a thickness of 2000 Å at 70 ° C and 1 MPa. Initial compression was performed for 1 second under conditions. Next, an IC wafer (manufacturer: Samsung LSI) having a bump area of 1200 μm ² and a thickness of 1.5 T was placed on the anisotropic using a release film removed from the anisotropic conductive film. On the conductive film, main compression was carried out for 5 seconds at 130 ° C and 70 MPa. The number of conductive particles per unit area (mm ² ) in the joined portion is then counted using an automated particle counter, and then the particle capture rate is calculated according to Equation 1: [Equation 1] Particle capture ratio (%) = (after initial compression and main compression) the number of the conductive particles before the number of the connecting portion of the connecting portion of the conductive particles per unit area (mm ²⁾ of / per unit area in the preliminary compression (mm ²⁾ of) × 100. Experimental Example 4 : Measurement of Adhesive Strength

The various anisotropic conductive films prepared in the examples and comparative examples were placed on a glass substrate (manufacturer: NeoView Kolon) comprising an indium tin oxide (ITO) circuit having a bump area of 1200 μm ² and a thickness of 2000 Å. Initial compression was carried out for 1 second at 70 ° C and 1 MPa. Next, in the case where the release film is removed from the anisotropic conductive film, an IC wafer (manufacturer: Samsung LSI) having a bump area of 1200 μm ² and a thickness of 1.5 T is placed on the anisotropic conductive film. Then, main compression was carried out at 130 ° C and 70 MPa for 5 seconds, thereby preparing a sample. The adhesion strength of the sample was tested using a peel strength tester (Bond Tester Dage Series-4000) at a maximum load of 200 kgf at a test speed of 100 μm/sec. Experimental Example 5 : Measurement of connection resistance after initial connection resistance and reliability test

The various anisotropic conductive films prepared in the examples and comparative examples were placed on a glass substrate (manufacturer: NeoView Kolon) comprising an indium tin oxide (ITO) circuit having a bump area of 1200 μm ² and a thickness of 2000 Å. Initial compression was carried out for 1 second at 70 ° C and 1 MPa. Next, in the case where the release film is removed from the anisotropic conductive film, an IC wafer (manufacturer: Samsung LSI) having a bump area of 1200 μm ² and a thickness of 1.5 T is placed on the anisotropic conductive film. Then, main compression was carried out at 130 ° C and 70 MPa for 5 seconds, thereby preparing a sample. Next, the resistance between the four points on the sample was measured by a 4-point detection method and defined as the initial resistance. Subsequently, the sample prepared by the main compression as above was kept at 85 ° C and 85% RH for 500 hours, and the resistance of the test sample was measured by the same method and defined as the connection resistance after the reliability test. At this time, 1 mA was applied using a resistance meter while measuring the voltage to calculate the average resistance. Table 1 <TABLE border="1"borderColor="#000000"width="85%"><TBODY><tr><td></td><td> Instance 1 </td><td> Instance 2 </td><td> Instance 3 </td><td> Comparative Example 1 </td><td> Comparative Example 2 </td></tr><tr><td> Minimum Melt Viscosity (Pa·s ) </td><td> 10,000 </td><td> 7,000 </td><td> 8,500 </td><td> 25,000 </td><td> 45,000 </td></tr><Tr><td> Curing rate (%) </td><td> 87 </td><td> 86 </td><td> 88 </td><td> 65 </td><td> 70 </td></tr><tr><td> particle capture rate (%) </td><td> 33 </td><td> 34 </td><td> 32 </td><td > 18 </td><td> 16 </td></tr><tr><td> Adhesion strength (MPa) </td><td> 33 </td><td> 32 </td><Td> 34 </td><td> 30 </td><td> 28 </td></tr><tr><td> initial connection resistance (Ω) </td><td> 0.02 </td ><td> 0.03 </td><td> 0.03 </td><td> 0.05 </td><td> 0.07 </td></tr><tr><td> Connection resistance after reliability test ( Ω) </td><td> 0.12 </td><td> 0.13 </td><td> 0.12 </td><td> 1.20 </td><td> 1.50 </td></tr></TBODY></TABLE>

As can be seen from Table 1, various anisotropic conductive films prepared in Examples 1 to 3 (including a copolymer of an anthracene compound and a bisphenol type epoxy resin and having a 150 g/eq or less than 150 g/eq) Epoxy equivalent epoxy resin exhibits good properties in terms of minimum melt viscosity, cure rate, particle capture rate, adhesion strength, and initial connection resistance and reliability after connection testing. In contrast, the non-isotropic conductive film of Comparative Example 1 prepared without using a copolymer of a ruthenium compound and a bisphenol type epoxy resin has a higher minimum melt at 130 ° C due to a lower glass transition temperature Tg of the binder resin. Viscosity and lower cure rate, and exhibits a lower particle capture rate and a significant increase in connection resistance after reliability testing. The anisotropic conductive film of Comparative Example 2 prepared using an epoxy resin having an epoxy equivalent of more than 150 g/eq has the highest minimum melt viscosity due to its low fluidity, and is as in Comparative Example 1. The isotropic conductive film has a lower curing rate than the anisotropic conductive film of the example, a low particle capturing ratio, and a much higher reliability test connection resistance.

Although a few embodiments have been described herein, it is understood that these embodiments are provided by way of illustration only, and those of ordinary skill in the art can implement various modifications, changes, variations and equivalent embodiments without departing from the invention. Spirit and scope. Therefore, the scope of the invention should be limited only by the scope of the appended claims and their equivalents.

3‧‧‧Electrical particles
10‧‧‧A non-isotropic conductive film
30‧‧‧Display device
50‧‧‧First connecting parts
60‧‧‧Second connection parts
70‧‧‧First electrode
80‧‧‧second electrode

1 is a cross-sectional view of a display device 30 including a first connection member 50 having a first electrode 70, a second connection member 60 having a second electrode 80, and a conductive particle 3, and according to an embodiment of the present invention. An anisotropic conductive film disposed between the first connecting member and the second connecting member and connecting the first electrode and the second electrode to each other.

3‧‧‧Electrical particles

10‧‧‧A non-isotropic conductive film

30‧‧‧Display device

50‧‧‧First connecting parts

60‧‧‧Second connection parts

70‧‧‧First electrode

80‧‧‧second electrode

Claims (19)

A composition for an anisotropic conductive film comprising: a copolymer of a ruthenium compound and a bisphenol type epoxy compound; an epoxy resin having an epoxy equivalent of 150 g/eq or less; a curing agent; Conductive particles. The composition for an anisotropic conductive film according to Item 1, wherein the ruthenium compound contains two or more hydroxyl groups. The composition for an anisotropic conductive film according to the second aspect of the invention, wherein the oxime compound has a structure represented by Formula 1: [Formula 1] Wherein each R is independently alkyl, alkoxy, aryl or cycloalkyl; each m is independently an integer from 0 to 4; and each n is independently an integer from 1 to 5. The composition for an anisotropic conductive film according to the above aspect of the invention, wherein the bisphenol type epoxy compound comprises at least one selected from the group consisting of bisphenol A type rings An oxygen compound, a bisphenol F type epoxy compound, a bisphenol AD type epoxy compound, a bisphenol E type epoxy compound, and a bisphenol S type epoxy compound. The composition for an anisotropic conductive film according to the first aspect of the invention, wherein the copolymer has at least one of the structures represented by the following formulas 2 to 4: [Formula 2] ; [Formula 3] ; and [Formula 4] Wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are each independently hydrogen, C ₁ to C ₆ alkyl, halogen atom or hydroxyl group; R ₅ and R ₆ are the same or different from each other and each Independently hydrogen, C ₁ to C ₆ alkyl, halogen atom, C ₆ to C ₂₀ aromatic ring or C ₆ to C ₂₀ alicyclic ring; and n is an integer from 1 to 100. The composition for an anisotropic conductive film according to claim 1, wherein the copolymer has a weight average molecular weight of 5,000 g/mol to 50,000 g/mol. The composition for an anisotropic conductive film according to claim 1, wherein the copolymer has a glass transition temperature (Tg) of from 140 ° C to 200 ° C. The composition for an anisotropic conductive film according to claim 1, wherein the epoxy resin having an epoxy equivalent of 150 g/eq or less is an alicyclic epoxy resin, Bisphenol type epoxy resin or aromatic epoxy resin. The composition for an anisotropic conductive film according to claim 1, wherein the solid content is from 20 wt% to 70 wt% based on the total of the components for the anisotropic conductive film. % of the copolymer; 20 wt% to 50 wt% of the epoxy resin having an epoxy equivalent weight of 150 g/eq or less; 0.5 wt% to 10 wt% of the curing agent; And 1 wt% to 30 wt% of the conductive particles. An anisotropic conductive film comprising: a copolymer of a ruthenium compound and a bisphenol type epoxy compound; and conductive particles, wherein the anisotropic conductive film has an adhesion strength of 10 MPa or more and according to the following equation 1 calculated particle capture ratio of 30% or more, the particle capture rate is preliminary compression of the anisotropic conductive film at 50 ° C to 80 ° C and 1.0 MPa to 3.0 MPa for 1 second Measured after 3 seconds to 6 seconds after primary compression at 120 ° C to 160 ° C and 60 MPa to 80 MPa: [Equation 1] Particle capture rate (%) = (after initial compression and main compression) the number of the conductive particles before the number of the connecting portion of the connecting portion of the conductive particles per unit area (mm ²⁾ of / per unit area in the preliminary compression (mm ²⁾ of) × 100. The anisotropic conductive film of claim 10, wherein the ruthenium compound comprises two or more hydroxyl groups. The anisotropic conductive film according to claim 11, wherein the hydrazine compound has a structure represented by Formula 1: [Formula 1] Wherein each R is independently alkyl, alkoxy, aryl or cycloalkyl; each m is independently an integer from 0 to 4; and each n is independently an integer from 1 to 5. The anisotropic conductive film according to claim 10, wherein the copolymer has at least one of the structures represented by the following formulas 2 to 4: [Formula 2] ; [Formula 3] ; and [Formula 4] Wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are each independently hydrogen, C ₁ to C ₆ alkyl, halogen atom or hydroxyl group; R ₅ and R ₆ are the same or different from each other and each Independently hydrogen, C ₁ to C ₆ alkyl, halogen atom, C ₆ to C ₂₀ aromatic ring or C ₆ to C ₂₀ alicyclic ring; and n is an integer from 1 to 100. The anisotropic conductive film according to claim 10, wherein the anisotropic conductive film is used in a wafer on glass (COG) or a wafer on film (COF). The anisotropic conductive film according to claim 10, wherein the anisotropic conductive film has a minimum of 5,000 Pa·s to 20,000 Pa·s at 30 ° C to 200 ° C according to the ARES measurement method. Melt viscosity. The anisotropic conductive film according to claim 10, wherein the anisotropic conductive material is measured after performing the preliminary compression and the main compression on the anisotropic conductive film. The film has an initial connection resistance of 1.0 Ω or less. The anisotropic conductive film according to claim 10, wherein the preliminary compression and the main compression are performed on the anisotropic conductive film, and then the anisotropic conductive film is subsequently The anisotropic conductive film measured after maintaining at 85 ° C and 85% RH for 500 hours had a reliability test connection resistance of 3 Ω or less. The anisotropic conductive film according to claim 10, wherein the anisotropic conductive film calculated according to Equation 2 has a curing rate of 80% or more: [Equation 2] Curing rate ( _{%) = [(H 0 -H} 1) / H 0] × 100 wherein H ₀ is a under a nitrogen atmosphere, in a temperature range of -50 ℃ to 250 deg.] C, at a temperature increment rate of 10 ℃ / min via The initial heat of the anisotropic conductive film measured by the area under the curve obtained by the differential scanning calorimetry; and H ₁ is the non-isotropic measured after being left on the hot plate at 130 ° C for 5 seconds. The heat of the conductive film. A display device comprising: a first connecting member having a first electrode; a second connecting member having a second electrode; and the anisotropic conductive according to any one of claims 10 to 18. a film, the anisotropic conductive film being disposed between the first connecting member and the second connecting member and connecting the first electrode and the second electrode to each other.