WO2017014414A1 - Composition for anisotropic conductive film, anisotropic conductive film, and display device using same - Google Patents

Composition for anisotropic conductive film, anisotropic conductive film, and display device using same Download PDF

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Publication number
WO2017014414A1
WO2017014414A1 PCT/KR2016/004417 KR2016004417W WO2017014414A1 WO 2017014414 A1 WO2017014414 A1 WO 2017014414A1 KR 2016004417 W KR2016004417 W KR 2016004417W WO 2017014414 A1 WO2017014414 A1 WO 2017014414A1
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WIPO (PCT)
Prior art keywords
anisotropic conductive
conductive film
compound
composition
bisphenol
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PCT/KR2016/004417
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French (fr)
Korean (ko)
Inventor
김정섭
강경희
김하나
서현주
황자영
고연조
권순영
박경수
송기태
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삼성에스디아이 주식회사
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Priority to CN201680042952.7A priority Critical patent/CN107851478B/en
Publication of WO2017014414A1 publication Critical patent/WO2017014414A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/10Adhesives in the form of films or foils without carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material

Definitions

  • the present invention relates to a composition for an anisotropic conductive film, an anisotropic conductive film and a display device using the same.
  • Anisotropic conductive film generally refers to a film-like adhesive in which conductive particles are dispersed in a resin such as epoxy.
  • the film is electrically conductive in the film thickness direction and insulated in the plane direction. It means a polymer film having anisotropy and adhesion.
  • the present invention is to provide an anisotropic conductive film capable of low-temperature rapid curing, but excellent in particle capture rate, adhesion and connection resistance properties.
  • a copolymer compound of a fluorene-based compound and a bisphenol-type epoxy compound Epoxy resins having an epoxy equivalent weight of 150 g / eq or less; Curing agent; And the composition for anisotropic conductive films containing electroconductive particle is provided.
  • an anisotropic conductive film comprising a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound, and conductive particles, the film is 50 °C to 80 °C, for 1 to 3 seconds and 1.0 MPa to 3.0 Pressurized under the conditions of MPa, and after the main compression under 120 ° C to 160 ° C for 3 to 6 seconds and under the pressure conditions of 60 MPa to 80 MPa, the particle capture rate according to the following formula 1 is 30% or more, the adhesive force is 10 MPa or more, An anisotropic conductive film is provided.
  • Particle capture rate (%) (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) ⁇ 100
  • a first connected member containing a first electrode
  • a second to-be-connected member containing a second electrode
  • a display device connected by the anisotropic conductive film described herein, which is located between the first to-be-connected member and the second to-be-connected member to connect the first electrode and the second electrode.
  • composition for anisotropic conductive film or anisotropic conductive film according to an embodiment of the present invention, the flowability is controlled at a high temperature to improve the capture rate of the conductive particles, low temperature fast curing is possible, adhesion, connection resistance and reliability This has an excellent advantage.
  • a display apparatus comprising an anisotropic conductive film 10 including conductive particles 3 positioned between two connected members to connect the first electrode and the second electrode. 30) is a cross-sectional view.
  • One embodiment of the present invention a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound; Epoxy resins having an epoxy equivalent weight of 150 g / eq or less; Curing agent; And it relates to the composition for anisotropic conductive films containing electroconductive particle.
  • composition for an anisotropic conductive film may include a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound as a binder resin.
  • the fluorene-based compound includes a fluorene structure and may include two or more hydroxyl groups for copolymerization with a bisphenol type epoxy compound.
  • the fluorene-based compound may be a compound having a structure of formula (1).
  • each R is independently an alkyl group, an alkoxy group, an aryl group, or a cycloalkyl group
  • m is each independently an integer of 0 to 4
  • n is each independently an integer of 1 to 5.
  • the copolymer compound may include the unit derived from the fluorene-based compound, thereby improving heat resistance of the anisotropic conductive film.
  • the bisphenol-type epoxy compound is not particularly limited, and for example, a bisphenol A-type epoxy compound, a bisphenol F-type epoxy compound, a bisphenol AD-type epoxy compound, a bisphenol E-type epoxy compound, a bisphenol S-type epoxy compound, or a combination thereof may be used. have. In one example, a bisphenol A epoxy compound or a bisphenol F epoxy compound can be used.
  • the method of copolymerizing the fluorene-based compound and the bisphenol-type epoxy compound to form a copolymerization compound is not particularly limited, and includes, but is not limited to, dissolving the fluorene-based compound and the bisphenol-type epoxy compound in a suitable solvent and a polymerization catalyst.
  • the mixture may be added and stirred for 10 to 40 hours at a temperature ranging from 100 ° C. to 150 ° C., followed by washing with a suitable washing agent such as methanol and water, followed by drying the precipitate formed to obtain a copolymer compound.
  • the solvent examples include propylene glycol monomethyl ether acetic acid (PGMEA), dimethylformamide (DMF), tetrahydrofuran (THF), and the like.
  • PGMEA propylene glycol monomethyl ether acetic acid
  • DMF dimethylformamide
  • THF tetrahydrofuran
  • PMEA propylene glycol monomethyl ether acetic acid
  • polymerization catalysts examples include acid anhydrides, amines, imidazoles, hydrazides, and cationics. These can be used individually or in mixture of 2 or more types.
  • the polymerization catalyst is 2-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole. , 2-phenyl-4-benzylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4 -Benzyl-5-hydroxymethylimidazole, 4,4'-methylenebis- (2-ethyl-5-methylimidazole), 2-aminoethyl-2-methylimidazole, 1-cyanoethyl It may be imidazole type such as 2-phenyl-4,5-di (cyanoethoxymethyl) imidazole, and may be aromatic diazonium salt, aromatic sulfonium salt, aliphatic sulfonium salt, aromatic iodine aluminum salt, phosphonium salt, Onium salt compounds
  • the copolymer compound may be a compound having a structure of any one of Formulas 2 to 4.
  • R 1 , R 2 , R 3, and R 4 are the same as or different from each other, and are each independently hydrogen or an alkyl group, halogen atom, or hydroxy group of C 1-6 , and R 5 and R 6 are the same as each other. or it is different and each independently represents hydrogen, an alkyl group, a halogen atom, C 6-20 or C 6-20 aromatic ring of a C 1-6 alicyclic ring, n is an integer from 1 to 100.
  • the copolymer compound includes a structure derived from a fluorene-based compound and a bisphenol-type epoxy compound as one repeating unit, and thus has high heat resistance due to the fluorene structure, while -CH 2- , between the aromatic rings of the bisphenol-type epoxy compound, It has a high glass transition temperature (Tg) due to a carbon skeleton such as -CH (CH 3 )-, -C (CH 2 )-or -C (CH 3 ) 2- , or a flexible skeleton such as -SO 2 skeleton and high temperature. There is also an upright characteristic.
  • Tg glass transition temperature
  • the glass transition temperature of the copolymer compound may range from 140 ° C to 200 ° C. Specifically, the temperature may be in the range of 150 ° C to 180 ° C, more specifically 160 ° C to 170 ° C. In the above range, the flowability of the anisotropic conductive film prepared from the composition for an anisotropic conductive film including the same can be adjusted, and when used with the conductive particles, the trapping rate of the conductive particles can be improved.
  • the weight average molecular weight of the copolymer compound may be in the range of 5,000 to 50,000, specifically, may be in the range of 10,000 to 30,000.
  • the anisotropic conductive film made of the composition for an anisotropic conductive film including the same in the above range may have a suitable strength.
  • the copolymer compound may be included in 20% by weight to 70% by weight based on the total weight of solids of the composition for an anisotropic conductive film. Specifically, the content may be included in an amount of 30 wt% to 60 wt%, more specifically 35 wt% to 55 wt%. Within this range, the flowability and adhesion of the prepared composition for anisotropic conductive film can be improved.
  • composition for the anisotropic conductive film may further include another binder resin in addition to the copolymer compound.
  • polyimide resin polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyesterurethane resin, polyvinyl butyral resin, styrene Butyrene-styrene (SBS) resin and epoxy modified body, styrene- ethylene-butylene- styrene (SEBS) resin and its modified body, or acrylonitrile butadiene rubber (NBR), its hydrogenated body, etc.
  • SBS styrene Butyrene-styrene
  • SEBS styrene- ethylene-butylene- styrene
  • NBR acrylonitrile butadiene rubber
  • the content of the other binder resin may be included in an amount of 1 wt% to 20 wt% based on the total weight of solids of the composition for anisotropic conductive films.
  • the epoxy resin having an epoxy equivalent of 150 g / eq or less is not particularly limited, and an epoxy equivalent of 150 g / eq or less may be used without limitation. Specifically, an epoxy resin having an epoxy equivalent of 80 to 150 g / eq may be used, and more specifically, an epoxy resin having 90 to 145 g / eq may be used. If the epoxy equivalent is in the above range, the viscosity and flow characteristics of the anisotropic conductive film may be good, there is an advantage that can achieve a low temperature rapid curing.
  • Non-limiting examples of the epoxy resins include bisphenol A epoxy resin, bisphenol A epoxy acrylate resin, bisphenol F epoxy resin, bisphenol AD epoxy resin, bisphenol E epoxy resin and bisphenol S epoxy resin Epoxy compounds; Aromatic epoxy compounds such as polyglycidyl ether epoxy resins, polyglycidyl ester epoxy resins and naphthalene epoxy resins; Alicyclic epoxy compounds; Novolak-type epoxy compounds, such as a cresol novolak-type epoxy resin and a phenol novolak-type epoxy resin; Glycidyl amine epoxy compounds; Glycidyl ester epoxy compounds; And biphenyl diglycidyl ether epoxy compounds.
  • the epoxy resin may be an alicyclic epoxy resin, a bisphenol type epoxy resin or an aromatic epoxy resin, and more specifically, an alicyclic epoxy resin. Since the cycloaliphatic epoxy resin has an epoxy structure in close proximity to the cycloaliphatic ring, the ring-opening reaction is fast, so that curing may occur faster than other epoxy resins.
  • the alicyclic epoxy resin may be used without limitation as long as the alicyclic epoxy resin has a structure in which an epoxy structure is present through a direct bond or connected to another alicyclic ring.
  • the epoxy equivalent of the epoxy equivalent of 150g / eq or less may include a liquid epoxy resin.
  • the liquid epoxy resin there is an advantage that can impart fluidity to the anisotropic conductive film made of the composition for an anisotropic conductive film comprising the same and to speed the curing rate.
  • the epoxy resin may be included in 20 to 50% by weight based on the total weight of solids of the composition for anisotropic conductive film, specifically 25 to 45% by weight, more specifically 30 to 40% by weight Can be. Curing may sufficiently occur in the above range, the adhesive strength, appearance, etc. of the anisotropic conductive film prepared with the composition for anisotropic conductive film comprising the same may be stable after reliability.
  • the composition for the anisotropic conductive film may further include an epoxy resin having an epoxy equivalent of more than 150g / eq in addition to the epoxy resin having an epoxy equivalent of 150g / eq or less.
  • the composition for the anisotropic conductive film includes the copolymer compound and an epoxy resin having an epoxy equivalent of 150 g / eq or less, thereby controlling flowability at high temperatures, thereby improving the rate of trapping of conductive particles, and enabling low temperature rapid curing. It can be excellent in adhesive strength and connection resistance.
  • the epoxy equivalent additionally contains more than 150g / eq epoxy resin, it may be included in 1% by weight to 10% by weight based on the total weight of solids of the composition for anisotropic conductive film.
  • the conductive particles are not particularly limited and may be used conductive particles commonly used in the art.
  • Non-limiting examples of the conductive particles that can be used include metal particles including Au, Ag, Ni, Cu, solder, and the like; carbon; Particles coated with a metal containing Au, Ag, Ni, etc., using resins containing polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol, and the like, and modified resins thereof as particles; Insulated electroconductive particle etc. which coat
  • the size of the conductive particles may be, for example, in the range of 1 ⁇ m to 20 ⁇ m, specifically 1 ⁇ m to 10 ⁇ m, depending on the pitch of the circuit applied.
  • the conductive particles may be included in an amount of 1 wt% to 30 wt%, specifically 10 wt% to 25 wt%, and more specifically 15 wt% to about the total weight of solids of the composition for anisotropic conductive films. It may be included in 20% by weight. In the above range, the conductive particles can be easily pressed between the terminals to ensure stable connection reliability, and the connection resistance can be reduced by improving the conductance.
  • the curing agent may be used without particular limitation as long as it is a curing agent of the epoxy curing type, non-limiting examples include acid anhydrides, amines, imidazoles, hydrazides, cationics and the like. These can be used individually or in mixture of 2 or more types.
  • the curing agent may be cationic, and examples thereof include ammonium / antimony hexafluoride and the like.
  • the curing agent Since the curing agent is used by mixing with the epoxy resin at room temperature, it should not have reactivity with the epoxy resin at room temperature after mixing, it has to be active at a certain temperature or more to be active with the epoxy resin to be expressed physical properties.
  • the curing agent may use a compound capable of generating a cation by thermal activation energy, for example, a cationic latent curing agent.
  • the cationic latent curing agent includes onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodine aluminum salts, phosphonium salts, pyridinium salts, and serenium salts; Complex compounds such as metal arene complexes and silanol / aluminum complexes; Compounds having an electron capturing function, including tosyreto groups such as benzoin tosylato- and o-nitrobenzyl tosylato-, may be used. More specifically, sulfonium salt compounds such as aromatic sulfonium salt compounds or aliphatic sulfonium salt compounds having high cation generation efficiency can be used.
  • onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodine aluminum salts, phosphonium salts, pyri
  • a cationic latent curing agent forms a salt structure
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • the curing agent may be included in 0.5 wt% to 10 wt% based on the total weight of solids of the composition for anisotropic conductive film. Specifically, 2 wt% to 7 wt% may be included. Within this range, sufficient reaction occurs for curing and excellent physical properties can be expected in bonding strength, reliability and the like after bonding through the formation of a suitable molecular weight.
  • composition for anisotropic conductive film of the present invention may further include additives such as polymerization inhibitors, antioxidants, heat stabilizers, to provide additional physical properties without inhibiting the basic physical properties.
  • additives such as polymerization inhibitors, antioxidants, heat stabilizers, to provide additional physical properties without inhibiting the basic physical properties.
  • the additive is not particularly limited, but may be included in an amount of 0.01 wt% to 10 wt% based on the total weight of solids of the composition for anisotropic conductive films.
  • the anti-polymerization agent can be selected from the group consisting of hydroquinone, hydroquinone monomethyl ether, p-benzoquinone, phenothiazine and mixtures thereof.
  • the antioxidant may be a phenolic or hydroxy cinnamate-based material, and specifically, tetrakis- (methylene- (3,5-di-t-butyl-4-hydroxycinnamate) methane, 3,5 -Bis (1,1-dimethylethyl) -4-hydroxy benzene propanoic acid thiol di-2,1-ethanediyl ester and the like can be used.
  • the anisotropic conductive film according to the present embodiment includes a copolymer compound of a fluorene-based compound and a bisphenol-type epoxy compound, and the film is press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa,
  • the particle capture rate according to Equation 1 measured after main compression under 120 ° C. to 160 ° C. for 3 to 6 seconds and under a pressure condition of 60 MPa to 80 MPa may be 30% or more, and the adhesive force may be 10 MPa or more.
  • copolymer compound of the fluorene-based compound and the bisphenol-type epoxy compound the same compounds as described in the previous examples can be used.
  • the anisotropic conductive film is press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and measured after main compression under pressure conditions of 120 ° C. to 160 ° C., 3 to 6 seconds and 60 MPa to 80 MPa.
  • the particle capture rate according to Equation 1 may be 30% or more.
  • Particle capture rate (%) (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) ⁇ 100
  • the particle capture rate may be specifically 40% or more, more specifically 50% or more. In the above range, the fluidity of the conductive layer is effectively suppressed, so that the conductive particles are sufficiently positioned on the terminals to improve the electrical conductance, and the outflow of the conductive particles can be reduced to reduce the short between terminals.
  • the method for measuring the particle capture rate is not particularly limited, and one non-limiting example is as follows: For the prepared anisotropic conductive film, the number of conductive particles (mm 2 ) per unit area of the anisotropic conductive film before pressing is determined. Calculate using a particle counter. Thereafter, the anisotropic conductive film is placed between the first to-be-connected member and the second to-be-connected member and press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and 120 ° C.
  • the number of (mm 2 ) conductive particles per unit area of the connection site is calculated using a particle automatic measuring device, and the particle capture rate is calculated by the above equation 1.
  • the anisotropic conductive film may have a bonding strength of 10 MPa or more, specifically, 20 MPa or more, more specifically 30 MPa or more, after the pressure bonding and the main compression.
  • the adhesive strength of the anisotropic conductive film is in the above range there is an advantage that can be used for a long time using the display device.
  • Non-limiting examples of the adhesion measurement method are as follows: The prepared anisotropic conductive film was placed on a glass substrate having an indium tin oxide circuit having a bump area of 1200 ⁇ m 2 and a thickness of 2000 kPa for 50 ° C. to 80 ° C. for 1 to 3 seconds, respectively.
  • the release film was removed and the bump chip area of 1200 ⁇ m 2 , 1.5T thick IC chip was raised and viewed under the conditions of 120 °C to 160 °C, 3-6 seconds and 60MPa to 80MPa
  • the specimen is prepared by pressing, and measured using a peel strength tester (Bond tester Dage Series-4000) under conditions of Maximum load: 200kgf, Test speed: 100um / sec.
  • the anisotropic conductive film may further include an epoxy resin, conductive particles, and a curing agent having an epoxy equivalent of 150 g / eq or less.
  • an epoxy resin e.g., polymethyl methacrylate
  • conductive particles e.g., polymethyl methacrylate
  • a curing agent having an epoxy equivalent of 150 g / eq or less.
  • the anisotropic conductive film may be used in a chip on glass (COG) or chip on film (COF) mounting method.
  • COG chip on glass
  • COF chip on film
  • the anisotropic conductive film may have a minimum melt viscosity of 5,000 to 20,000 Pa ⁇ s at 30 ° C. to 200 ° C. according to the ARES measurement, and specifically, may be 6,000 to 10,000 Pa ⁇ s. In the above range, sufficient adhesive force may be expressed, pressure adhesion may be improved, and an insulating layer between terminals may be sufficiently filled to improve connection reliability.
  • the method of measuring the minimum melt viscosity is not particularly limited, and non-limiting examples are as follows: using an ARES G2 rheometer (TA Instruments), sample thickness 150 ⁇ m, temperature increase rate 10 ° C./min, stress 5% The lowest melt viscosity of the anisotropic conductive film is measured in the range of 30 ° C. to 200 ° C. at a frequency of 10 rad / sec.
  • the anisotropic conductive film may have a curing rate of 80% or more according to the following Equation 2, specifically 85% or more, more specifically 90% or more.
  • Curing Rate (%) [(H 0 -H 1 ) / H 0 ] ⁇ 100
  • H 0 is an anisotropic conductive film is measured by the area under the curve at 10 °C / min, -50 °C to 250 °C temperature section using a DSC (thermodifferential scanning calorimetry, TA instruments, Q20)
  • DSC thermodifferential scanning calorimetry, TA instruments, Q20
  • H 1 represents the calorific value measured by the same method after leaving for 5 seconds at 130 °C on a hot plate (hot plate).
  • the curing rate in the above range is related to the low temperature fast curing property of the anisotropic conductive film because it reflects the rapid progress of curing in a short time of 5 seconds at a low temperature of 130 ° C., for example.
  • the anisotropic conductive film is press-bonded at 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and main compression under pressure conditions of 120 ° C. to 160 ° C., 3 to 6 seconds and 60 MPa to 80 MPa.
  • the measured initial connection resistance may be less than 1.0 ⁇ . Specifically, it may be 0.7 ⁇ or less, more specifically 0.5 ⁇ or less.
  • the anisotropic conductive film after the pressure bonding and the main compression, the connection resistance may be 3 ⁇ or less after the reliability evaluation measured by standing for 500 hours under the conditions of the temperature 85 °C and 85% relative humidity. Specifically, it may be 2 ⁇ or less, and more specifically 1 ⁇ or less.
  • the anisotropic conductive film having the connection resistance range after the initial connection resistance and the reliability evaluation has the advantage of not only improving the connection reliability but also maintaining the long-term storage stability.
  • An anisotropic conductive film is a glass substrate having an indium tin oxide circuit having a bump area of 1200 ⁇ m 2 and a thickness of 2000 GPa. After pressing and pressing at 50 ° C. to 80 ° C., 1 to 3 seconds, and 1.0 MPa to 3.0 MPa, respectively, the release film was removed and the IC chip having a bump area of 1200 ⁇ m 2 and a thickness of 1.5T was placed thereon, and then 120 ° C. to 160 ° C.
  • the specimen was prepared by main compression under the conditions of 3 to 6 seconds and 60 MPa to 80 MPa, and the resistance between 4 points was measured using the 4 point probe method and expressed as initial connection resistance. Thereafter, the specimen prepared by the main compression was allowed to stand for 500 hours under a condition of 85 ° C. and a relative humidity of 85%, and then the resistance was measured in the same manner.
  • the resistance measuring instrument applies 1mA and calculates and displays the resistance with the measured voltage.
  • the anisotropic conductive film may have a structure in which an insulating layer is laminated on one side or both sides of the conductive layer. That is, a two-layer structure in which a conductive layer and an insulating layer are laminated or a conductive layer may be laminated in an insulating layer, and the insulating layer may be a three-layer structure in which the insulating layer is laminated. It may be a multilayer structure laminated in layers or more.
  • laminate means that another layer is formed on one surface of an arbitrary layer, and may be used in combination with a coating or lamination.
  • an anisotropic conductive film having a multilayered structure including a conductive layer and an insulating layer separately even if the content of inorganic particles such as silica is high, since the layers are separated, the conductive particles do not interfere with the crimping of the conductive particles. Since the flowability of the composition for anisotropic conductive films can be influenced, the anisotropic conductive film by which fluidity was controlled can be manufactured.
  • Another embodiment of the present invention relates to a method for producing an anisotropic conductive film.
  • No particular apparatus or equipment is necessary to form the anisotropic conductive film of the present invention.
  • an anisotropic conductive film can be obtained by applying a thickness of 10 ⁇ m to 50 ⁇ m and then drying for a predetermined time to volatilize toluene or the like.
  • the display device includes a first to-be-connected member containing a first electrode; A second to-be-connected member containing a second electrode; And a display device connected between the first to-be-connected member and the second to-be-connected member and connected by the anisotropic conductive film according to the embodiments described herein to connect the first electrode and the second electrode.
  • a display device connected between the first to-be-connected member and the second to-be-connected member and connected by the anisotropic conductive film according to the embodiments described herein to connect the first electrode and the second electrode.
  • the first to-be-connected member or the second to-be-connected member is formed with an electrode that requires electrical connection.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • It may be a glass substrate or a plastic substrate, a printed wiring board, a ceramic wiring board, a flexible wiring board, a semiconductor silicon chip, an IC chip or a driver IC chip on which electrodes of the electrode are formed, and more specifically, the first connected member and the second connected member.
  • Either one may be an IC chip or a driver IC chip and the other may be a glass substrate.
  • the first connected member 50 including the first electrode 70 and the second connected member 60 including the second electrode 80 may be described.
  • the copolymer compound 1 prepared in Preparation Example 1 as a binder resin for forming a film, 35 parts by weight of an epoxy resin (Daicel celloxide 2021P) having an epoxy equivalent of 130 g / eq, a thermosetting latent curing agent (HX3741, Asahi Kasei, Japan) 5 parts by weight, for anisotropic conductive films by mixing 20 parts by weight of insulated conductive particles (AUL-704, average particle size 4um, SEKISUI, Japan) as a filler for imparting conductive performance to the anisotropic conductive film.
  • the composition was prepared. After apply
  • Example 1 except that copolymer compound 2 prepared in Preparation Example 2 was used as the binder resin, and epoxy resin 2 (HP4032D, Dinippon ink) having an epoxy equivalent of 143 g / eq was used as the epoxy resin.
  • An anisotropic conductive film of Example 2 was prepared under the same conditions and methods.
  • Example 1 except that copolymer compound 3 prepared in Preparation Example 3 was used as the binder resin, and epoxy resin 3 (JER630ESD, Japan epoxy resin) having an epoxy equivalent of 97 g / eq was used as the epoxy resin.
  • the anisotropic conductive film of Example 3 was manufactured under the same conditions and methods as in Example 1.
  • Comparative Example 1 was the same as in Example 1, except that biphenyl fluorene type binder resin (FX-293, Shin-Il Chem Chem, Tg: 165 °C, molecular weight: 45,000) as the binder resin
  • An anisotropic conductive film of 1 was prepared.
  • Example 1 an anisotropic conductive film of Comparative Example 2 was prepared under the same conditions and methods as in Example 1, except that an epoxy resin (YDPN 638, Kukdo Chemical) having an epoxy equivalent of 180 g / eq was used as the epoxy resin. .
  • an epoxy resin YDPN 638, Kukdo Chemical
  • the sample thickness is 150 ⁇ m, temperature rise rate 10 °C / min, stress 5%, frequency 10rad / sec 30 °C to 200 The lowest melt viscosity was measured in the °C section.
  • Curing Rate (%) [(H 0 -H 1 ) / H 0 ] ⁇ 100
  • the number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressure bonding was calculated using a particle automatic measuring device (ZOOTUS).
  • the anisotropic conductive film was placed on a glass substrate (manufactured by Neoview Kolon) having an indium tin oxide circuit having a bump area of 1200 ⁇ m 2 and a thickness of 2000 kPa, and press-bonded at 1 MPa for 1 second at 70 ° C., respectively, and then the release film was removed. Then, the IC chip (Samsung LSI) with a bump area of 1200 ⁇ m 2 and 1.5T thickness was put up, and then they were main compressed at 130 °C for 5 seconds and 70MPa, and the number of conductive particles (mm 2 ) per unit area of the connection site was Was calculated using the particle size analyzer and particle capture rate was calculated by the following Equation 1.
  • Particle capture rate (%) (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) ⁇ 100
  • the anisotropic conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (manufactured by Neoview Kolon) with an indium tin oxide circuit having a bump area of 1200 ⁇ m 2 and a thickness of 2000 ⁇ m, respectively, and pressurized at 1 MPa for 1 second at 70 ° C. Good. After the press-bonding, the release film was removed and the bump area 1200 ⁇ m 2 and the thickness 1.5T IC chip (manufacturer: Samsung LSI) were put up and then pressed at 130 ° C. for 5 seconds at 70 MPa to prepare a specimen. The average of these was measured three times or more for each specimen using a peel strength tester (Bond tester Dage Series-4000) under the conditions of Maximum load: 200kgf, Test speed: 100 ⁇ m / sec.
  • the anisotropic conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (manufactured by Neoview Kolon) with an indium tin oxide circuit having a bump area of 1200 ⁇ m 2 and a thickness of 2000 ⁇ m, respectively, and pressurized at 1 MPa for 1 second at 70 ° C. Good. After the press-bonding, the release film was removed and bumped area 1200 ⁇ m 2 , 1.5T thick IC chip (manufacturer: Samsung LSI) were put up, and then pressed at 5 ° C. under conditions of 70 MPa at 130 ° C. to prepare a specimen. The resistance between 4 points was measured using the 4 point probe method and this was expressed as initial connection resistance. Subsequently, the specimen prepared by main compression was allowed to stand for 500 hours under a condition of 85 ° C. and 85% relative humidity, and then the resistance was measured in the same manner.
  • a glass substrate manufactured by Neoview Kolon
  • indium tin oxide circuit having
  • the resistance measuring instrument applies 1mA and calculates the average of the resistance by using the measured voltage.
  • Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Melt Viscosity (Pas) 10,000 7,000 8,500 25,000 45,000 Curing rate (%) 87 86 88 65 70 Particle Capture Rate (%) 33 34 32 18 16 Adhesive force (MPa) 33 32 34 30 28 Initial connection resistance ( ⁇ ) 0.02 0.03 0.03 0.05 0.07 Connection resistance ( ⁇ ) after reliability evaluation 0.12 0.13 0.12 1.20 1.50
  • Comparative Example 1 which does not use a copolymer of a fluorene-based compound and a bisphenol-type epoxy resin, has a high minimum melt viscosity and a low curing rate at 130 ° C. due to the low Tg of the binder resin, and a low particle capture rate.
  • Comparative Example 2 using an epoxy resin having an epoxy equivalent of more than 150 g / eq showed the lowest melt viscosity due to poor flow characteristics, and the curing rate and particle capture rate were lowered as in Comparative Example 1, compared to Examples. After the reliability evaluation, the connection resistance increased significantly.

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Abstract

An embodiment of the present invention relates to a composition for an anisotropic conductive film, the composition containing: a copolymerized compound of a fluorene-based compound and a bisphenol type epoxy compound; an epoxy resin having an epoxy equivalent of 150 g/eq or less; a curing agent; and conductive particles. Another embodiment of the present invention relates to an anisotropic conductive film comprising: a copolymerized compound of a fluorene-based compound and a bisphenol type epoxy compound; and conductive particles, wherein the film has a particle capturing rate, according to equation 1, of 30% or more and an adhesive strength of 10 MPa or more, which are measured after the film is preliminarily compressed in conditions of 1.0-3.0 Mpa at 50-80℃ for 1-3 seconds and mainly compressed in conditions of 60-80 Mpa at 120-160℃ for 3-6 seconds. [Equation 1] Particle capturing rate (%) = (number of conductive particles per unit area (mm2) in a contact site after preliminary compression and main compression) / (number of conductive particles per unit area (mm2) of anisotropic conductive film before preliminary compression) × 100

Description

이방 도전성 필름용 조성물, 이방 도전성 필름 및 이를 이용한 디스플레이 장치Composition for anisotropic conductive film, anisotropic conductive film and display device using same
본 발명은 이방 도전성 필름용 조성물, 이방 도전성 필름 및 이를 이용한 디스플레이 장치에 관한 것이다.The present invention relates to a composition for an anisotropic conductive film, an anisotropic conductive film and a display device using the same.
이방 도전성 필름(Anisotropic conductive film, ACF)이란 일반적으로 도전 입자를 에폭시 등의 수지에 분산시킨 필름 형상의 접착제를 말하는 것으로, 필름의 막 두께 방향으로는 도전성을 띠고 면 방향으로는 절연성을 띠는 전기 이방성 및 접착성을 갖는 고분자 막을 의미한다. 이방 도전성 필름을 접속시키고자 하는 회로 사이에 상기 필름을 위치시킨 후 일정 조건의 가열, 가압 공정을 거치면, 회로 단자들 사이는 도전성 입자에 의해 전기적으로 접속되고, 인접하는 전극 사이에는 절연성 접착 수지가 충진되어 도전성 입자가 서로 독립하여 존재하게 됨으로써 높은 절연성을 부여하게 된다.Anisotropic conductive film (ACF) generally refers to a film-like adhesive in which conductive particles are dispersed in a resin such as epoxy. The film is electrically conductive in the film thickness direction and insulated in the plane direction. It means a polymer film having anisotropy and adhesion. After placing the film between the circuits to which the anisotropic conductive film is to be connected and subjecting to heating and pressing under a certain condition, the circuit terminals are electrically connected by conductive particles, and an insulating adhesive resin is provided between adjacent electrodes. By filling, the conductive particles are present independently of each other to impart high insulation.
최근 디스플레이 패널의 박형화, 고해상도화가 진행됨에 따라 최소접속면적에 최대의 도전입자를 포착시키는 기술이 연구되어 왔다. 도전입자 포착율 향상을 위하여 도전입자의 밀도를 증가시키거나, 유체의 흐름을 억제시키는 방법이 연구되어 왔는데, 이는 인접 전극간의 절연저항 특성을 악화시키거나 경화 후 모듈러스의 증가로 접착력이 저하되는 문제점이 있었다.Recently, as thinning and high resolution of display panels have progressed, techniques for capturing the maximum number of conductive particles in the minimum connection area have been studied. In order to improve the capture rate of the conductive particles, a method of increasing the density of the conductive particles or suppressing the flow of the fluid has been studied, which causes deterioration of the insulation resistance between adjacent electrodes or deterioration in adhesion due to an increase in modulus after curing. There was this.
따라서, 유체의 흐름을 효과적으로 억제시키면서도, 절연저항 특성이 우수하여 전극간 쇼트 발생 위험이 적고, 접착력이 뛰어난 이방 도전성 필름의 개발이 필요하다.Accordingly, there is a need to develop an anisotropic conductive film that is excellent in insulation resistance and has a low risk of short circuit between electrodes while effectively suppressing the flow of a fluid.
본 발명은 저온 속경화가 가능하면서도 입자포착율, 접착력 및 접속저항 물성이 우수한 이방 도전성 필름을 제공하고자 한다.The present invention is to provide an anisotropic conductive film capable of low-temperature rapid curing, but excellent in particle capture rate, adhesion and connection resistance properties.
본 발명의 일 실시예에서, 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물; 에폭시 당량이 150g/eq 이하인 에폭시 수지; 경화제; 및 도전 입자를 포함하는, 이방 도전성 필름용 조성물이 제공된다.In one embodiment of the present invention, a copolymer compound of a fluorene-based compound and a bisphenol-type epoxy compound; Epoxy resins having an epoxy equivalent weight of 150 g / eq or less; Curing agent; And the composition for anisotropic conductive films containing electroconductive particle is provided.
본 발명의 다른 실시예에서, 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물, 및 도전입자를 포함하는 이방 도전성 필름으로, 상기 필름을 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa의 조건에서 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착 후 측정한 하기 식 1에 따른 입자포착율이 30% 이상이고, 접착력이 10 MPa 이상인, 이방 도전성 필름이 제공된다.In another embodiment of the present invention, an anisotropic conductive film comprising a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound, and conductive particles, the film is 50 ℃ to 80 ℃, for 1 to 3 seconds and 1.0 MPa to 3.0 Pressurized under the conditions of MPa, and after the main compression under 120 ° C to 160 ° C for 3 to 6 seconds and under the pressure conditions of 60 MPa to 80 MPa, the particle capture rate according to the following formula 1 is 30% or more, the adhesive force is 10 MPa or more, An anisotropic conductive film is provided.
[식 1][Equation 1]
입자포착율(%) = (가압착 및 본압착 후 접속 부위의 단위면적당(mm2) 도전 입자의 수 /가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수) × 100Particle capture rate (%) = (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) × 100
본 발명의 또 다른 실시예에서, 제1 전극을 함유하는 제1 피접속부재; 제2 전극을 함유하는 제2 피접속부재; 및 상기 제1 피접속부재와 상기 제2 피접속부재 사이에 위치하여 상기 제1 전극 및 상기 제2 전극을 접속시키는, 본원에 기재된 이방 도전성 필름에 의해 접속된 디스플레이 장치가 제공된다.In another embodiment of the present invention, a first connected member containing a first electrode; A second to-be-connected member containing a second electrode; And a display device connected by the anisotropic conductive film described herein, which is located between the first to-be-connected member and the second to-be-connected member to connect the first electrode and the second electrode.
본 발명의 일 실시예들에 따른 이방 도전성 필름용 조성물 또는 이방 도전성 필름은, 고온에서 흐름성이 조절되어 도전 입자의 포착율을 개선할 수 있고, 저온 속경화가 가능하며 접착력, 접속저항 및 신뢰성이 우수한 장점이 있다.Composition for anisotropic conductive film or anisotropic conductive film according to an embodiment of the present invention, the flowability is controlled at a high temperature to improve the capture rate of the conductive particles, low temperature fast curing is possible, adhesion, connection resistance and reliability This has an excellent advantage.
도 1은 제1 전극(70)을 함유하는 제1 피접속부재(50)와, 제2 전극(80)을 포함하는 제2 피접속부재(60), 및 상기 제1 피접속부재와 상기 제2 피접속부재 사이에 위치하여 상기 제1 전극 및 상기 제2 전극을 접속시키는, 도전 입자(3)을 포함하는 이방 도전성 필름(10)을 포함하는, 본 발명의 일 구현예에 따른 디스플레이 장치(30)의 단면도이다.1 shows a first to-be-connected member 50 including a first electrode 70, a second to-be-connected member 60 including a second electrode 80, and the first to-be-connected member and the first to-be-connected member. A display apparatus according to an embodiment of the present invention, comprising an anisotropic conductive film 10 including conductive particles 3 positioned between two connected members to connect the first electrode and the second electrode. 30) is a cross-sectional view.
이하, 본 발명에 대하여 보다 상세히 설명한다. 본 명세서에 기재되지 않은 내용은 본 발명의 기술 분야 또는 유사 분야에서 숙련된 자이면 충분히 인식하고 유추할 수 있는 것이므로 그 설명을 생략한다.Hereinafter, the present invention will be described in more detail. Content not described herein is omitted because it can be sufficiently recognized and inferred by those skilled in the art or similar fields of the present invention.
본 발명의 일 실시예는, 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물; 에폭시 당량이 150g/eq 이하인 에폭시 수지; 경화제; 및 도전 입자를 포함하는, 이방 도전성 필름용 조성물에 관한 것이다.One embodiment of the present invention, a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound; Epoxy resins having an epoxy equivalent weight of 150 g / eq or less; Curing agent; And it relates to the composition for anisotropic conductive films containing electroconductive particle.
본 발명의 일 실시예에 따른 이방 도전성 필름용 조성물은, 바인더 수지로 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물을 포함할 수 있다.The composition for an anisotropic conductive film according to an embodiment of the present invention may include a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound as a binder resin.
상기 플루오렌계 화합물은 플루오렌 구조를 포함하며 비스페놀형 에폭시 화합물과의 공중합 반응을 위해 2개 이상의 히드록시기를 포함할 수 있다.The fluorene-based compound includes a fluorene structure and may include two or more hydroxyl groups for copolymerization with a bisphenol type epoxy compound.
일 구체예에서, 상기 플루오렌계 화합물은 하기 화학식 1의 구조를 갖는 화합물일 수 있다.In one embodiment, the fluorene-based compound may be a compound having a structure of formula (1).
[화학식 1][Formula 1]
Figure PCTKR2016004417-appb-I000001
Figure PCTKR2016004417-appb-I000001
상기 화학식 1에서, R은 각각 독립적으로 알킬기, 알콕시기, 아릴기 또는 사이클로 알킬기이고, m은 각각 독립적으로 0 내지 4의 정수이고, n은 각각 독립적으로 1 내지 5의 정수이다.In Formula 1, each R is independently an alkyl group, an alkoxy group, an aryl group, or a cycloalkyl group, m is each independently an integer of 0 to 4, n is each independently an integer of 1 to 5.
상기 공중합 화합물은 상기 플루오렌계 화합물 유래 단위를 포함함으로써, 이방 도전성 필름의 내열성이 향상될 수 있다.The copolymer compound may include the unit derived from the fluorene-based compound, thereby improving heat resistance of the anisotropic conductive film.
상기 비스페놀형 에폭시 화합물은 특별히 제한되지 아니하며, 예를 들어 비스페놀 A형 에폭시 화합물, 비스페놀 F형 에폭시 화합물, 비스페놀 AD형 에폭시 화합물, 비스페놀 E형 에폭시 화합물, 비스페놀 S형 에폭시 화합물 또는 이들의 조합을 사용할 수 있다. 일 예에서, 비스페놀 A형 에폭시 화합물 또는 비스페놀 F형 에폭시 화합물을 사용할 수 있다.The bisphenol-type epoxy compound is not particularly limited, and for example, a bisphenol A-type epoxy compound, a bisphenol F-type epoxy compound, a bisphenol AD-type epoxy compound, a bisphenol E-type epoxy compound, a bisphenol S-type epoxy compound, or a combination thereof may be used. have. In one example, a bisphenol A epoxy compound or a bisphenol F epoxy compound can be used.
상기 플루오렌계 화합물과 상기 비스페놀형 에폭시 화합물을 공중합하여 공중합 화합물을 형성하는 방법은 특별히 제한되지 아니하며, 비제한적인 예로 상기 플루오렌계 화합물과 비스페놀형 에폭시 화합물을 적절한 용매에 용해하고, 중합 촉매를 첨가하고 100℃ 내지 150℃의 온도범위에서 10 내지 40시간 교반하여, 적당한 세척제, 예를 들어 메탄올과 물을 이용하여 세척한 뒤 형성된 침전을 건조하여 공중합 화합물을 수득할 수 있다.The method of copolymerizing the fluorene-based compound and the bisphenol-type epoxy compound to form a copolymerization compound is not particularly limited, and includes, but is not limited to, dissolving the fluorene-based compound and the bisphenol-type epoxy compound in a suitable solvent and a polymerization catalyst. The mixture may be added and stirred for 10 to 40 hours at a temperature ranging from 100 ° C. to 150 ° C., followed by washing with a suitable washing agent such as methanol and water, followed by drying the precipitate formed to obtain a copolymer compound.
상기 용매의 예로는 프로필렌글리콜 모노메틸에테르 아세트산(PGMEA), 디메틸포름아미드(DMF), 테트라하이드로퓨란(THF) 등을 들 수 있으며, 구체적으로 프로필렌글리콜 모노메틸에테르 아세트산(PGMEA)을 사용할 수 있다.Examples of the solvent include propylene glycol monomethyl ether acetic acid (PGMEA), dimethylformamide (DMF), tetrahydrofuran (THF), and the like. Specifically, propylene glycol monomethyl ether acetic acid (PGMEA) may be used.
상기 중합 촉매의 예로는 산무수물계, 아민계, 이미다졸계, 히드라지드계, 양이온계 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용될 수 있다.Examples of the polymerization catalysts include acid anhydrides, amines, imidazoles, hydrazides, and cationics. These can be used individually or in mixture of 2 or more types.
구체적으로, 상기 중합 촉매는 2-메틸이미다졸, 2-페닐-4-메틸이미다졸, 1-벤질-2-메틸이미다졸, 2-에틸이미다졸, 2-이소프로필이미다졸, 2-페닐-4-벤질이미다졸, 2-페닐-4,5-다이하이드록시메틸이미다졸, 2-페닐-4-메틸-5-하이드록시메틸이미다졸, 2-페닐-4-벤질-5-하이드록시메틸이미다졸, 4,4'-메틸렌비스-(2-에틸-5-메틸이미다졸), 2-아미노에틸-2-메틸이미다졸, 1-시아노에틸-2-페닐-4,5-다이(시아노에톡시메틸)이미다졸 등의 이미다졸계일 수 있으며, 방향족 디아조늄염, 방향족 설포늄염, 지방족 설포늄염, 방향족 요오드 알루미늄염, 포스포늄염, 피리디늄염, 세레노니움염 등의 오늄염 화합물; 금속 아렌(arene) 착제, 실라놀/알루미늄 착제 등의 착제 화합물; 벤조인토시레토(Benzoin tosylato-), o-니트로벤질토시레토(ortho-Nitrobenzyl tosylato-) 등의 토시레이토기가 포함되어 전자 포획(capture) 작용을 하는 화합물 등의 양이온 잠재성 경화제일 수 있다. 보다 구체적으로, 2-메틸이미다졸, 2-에틸이미다졸 또는 2-페닐-4,5-다이하이드록시메틸이미다졸 등의 이미다졸계 중합 촉매를 사용할 수 있다.Specifically, the polymerization catalyst is 2-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole. , 2-phenyl-4-benzylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4 -Benzyl-5-hydroxymethylimidazole, 4,4'-methylenebis- (2-ethyl-5-methylimidazole), 2-aminoethyl-2-methylimidazole, 1-cyanoethyl It may be imidazole type such as 2-phenyl-4,5-di (cyanoethoxymethyl) imidazole, and may be aromatic diazonium salt, aromatic sulfonium salt, aliphatic sulfonium salt, aromatic iodine aluminum salt, phosphonium salt, Onium salt compounds such as pyridinium salts and serenium salts; Complex compounds such as metal arene complexes and silanol / aluminum complexes; It may be a cationic latent curing agent such as a compound that contains an electron capture function such as benzoin tosylato- and o-nitrobenzyl tosylato-, including tosyreto groups such as ortho-Nitrobenzyl tosylato-. More specifically, imidazole series polymerization catalysts such as 2-methylimidazole, 2-ethylimidazole or 2-phenyl-4,5-dihydroxymethylimidazole can be used.
일 실시예에서, 상기 공중합 화합물은 하기 화학식 2 내지 4 중 어느 하나의 구조를 갖는 화합물일 수 있다.In one embodiment, the copolymer compound may be a compound having a structure of any one of Formulas 2 to 4.
[화학식 2][Formula 2]
Figure PCTKR2016004417-appb-I000002
Figure PCTKR2016004417-appb-I000002
[화학식 3][Formula 3]
Figure PCTKR2016004417-appb-I000003
Figure PCTKR2016004417-appb-I000003
[화학식 4][Formula 4]
Figure PCTKR2016004417-appb-I000004
Figure PCTKR2016004417-appb-I000004
상기 화학식 2 내지 4에서, R1, R2, R3 및 R4는 서로 동일하거나 상이하고 각각 독립적으로 수소 또는 C1-6의 알킬기, 할로겐 원자 또는 히드록시기이며, R5 및 R6은 서로 동일하거나 상이하고 각각 독립적으로 수소, C1-6의 알킬기, 할로겐 원자, C6-20의 방향족 고리 또는 C6-20의 지환족 고리이며, n은 1 내지 100의 정수이다.In Formulas 2 to 4, R 1 , R 2 , R 3, and R 4 are the same as or different from each other, and are each independently hydrogen or an alkyl group, halogen atom, or hydroxy group of C 1-6 , and R 5 and R 6 are the same as each other. or it is different and each independently represents hydrogen, an alkyl group, a halogen atom, C 6-20 or C 6-20 aromatic ring of a C 1-6 alicyclic ring, n is an integer from 1 to 100.
상기 공중합 화합물은 플루오렌계 화합물과 비스페놀형 에폭시 화합물로부터 유래된 구조를 하나의 반복단위로 포함함으로써, 플루오렌 구조로 인한 고내열성을 가지면서도 비스페놀형 에폭시 화합물의 방향족 고리 사이의 -CH2-, -CH(CH3)-, -C(CH2)- 또는 -C(CH3)2- 등의 탄소 골격, 또는 -SO2 골격과 같은 유연 골격으로 인해 높은 유리전이온도(Tg)를 가지며 고온에서도 강직한 특성이 있다. 또한, 상기 공중합 화합물을 이방 도전성 필름용 조성물에 사용함으로써, 제조된 이방 도전성 필름의 보관 안정성이 개선될 수 있다.The copolymer compound includes a structure derived from a fluorene-based compound and a bisphenol-type epoxy compound as one repeating unit, and thus has high heat resistance due to the fluorene structure, while -CH 2- , between the aromatic rings of the bisphenol-type epoxy compound, It has a high glass transition temperature (Tg) due to a carbon skeleton such as -CH (CH 3 )-, -C (CH 2 )-or -C (CH 3 ) 2- , or a flexible skeleton such as -SO 2 skeleton and high temperature. There is also an upright characteristic. In addition, by using the copolymer compound in the composition for an anisotropic conductive film, the storage stability of the produced anisotropic conductive film can be improved.
상기 공중합 화합물의 유리전이온도는 140℃ 내지 200℃의 범위일 수 있다. 구체적으로 150℃ 내지 180℃, 보다 구체적으로 160℃ 내지 170℃의 범위일 수 있다. 상기 범위에서 이를 포함하는 이방 도전성 필름용 조성물로 제조된 이방 도전성 필름의 흐름성이 조절되어, 도전 입자와 함께 사용시 도전 입자의 포착율을 개선시킬 수 있다.The glass transition temperature of the copolymer compound may range from 140 ° C to 200 ° C. Specifically, the temperature may be in the range of 150 ° C to 180 ° C, more specifically 160 ° C to 170 ° C. In the above range, the flowability of the anisotropic conductive film prepared from the composition for an anisotropic conductive film including the same can be adjusted, and when used with the conductive particles, the trapping rate of the conductive particles can be improved.
상기 공중합 화합물의 중량평균분자량은 5,000 내지 50,000의 범위일 수 있고, 구체적으로는 10,000 내지 30,000의 범위일 수 있다. 상기 범위에서 이를 포함하는 이방 도전성 필름용 조성물로 제조된 이방 도전성 필름이 적절한 강도를 가질 수 있다.The weight average molecular weight of the copolymer compound may be in the range of 5,000 to 50,000, specifically, may be in the range of 10,000 to 30,000. The anisotropic conductive film made of the composition for an anisotropic conductive film including the same in the above range may have a suitable strength.
상기 공중합 화합물은 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로 20 중량% 내지 70 중량%로 포함될 수 있다. 구체적으로 30 중량% 내지 60 중량%, 보다 구체적으로 35 중량% 내지 55 중량%로 포함될 수 있다. 상기 범위 내에서, 제조된 이방 도전성 필름용 조성물의 흐름성 및 접착성이 개선될 수 있다.The copolymer compound may be included in 20% by weight to 70% by weight based on the total weight of solids of the composition for an anisotropic conductive film. Specifically, the content may be included in an amount of 30 wt% to 60 wt%, more specifically 35 wt% to 55 wt%. Within this range, the flowability and adhesion of the prepared composition for anisotropic conductive film can be improved.
다른 실시예에서, 상기 이방 도전성 필름용 조성물은 상기 공중합 화합물 이외에도 다른 바인더 수지를 추가로 포함할 수 있다.In another embodiment, the composition for the anisotropic conductive film may further include another binder resin in addition to the copolymer compound.
상기 다른 바인더 수지로는 폴리이미드 수지, 폴리아미드 수지, 페녹시 수지, 폴리메타크릴레이트 수지, 폴리아크릴레이트 수지, 폴리우레탄 수지, 폴리에스테르 수지, 폴리에스테르우레탄 수지, 폴리비닐 부티랄 수지, 스타이렌-부티렌-스타이렌(SBS) 수지 및 에폭시 변성체, 스타이렌-에틸렌-부틸렌-스타이렌(SEBS) 수지 및 그 변성체, 또는 아크릴로니트릴 부타디엔 고무(NBR) 및 그 수소화체 등을 들 수 있다. 이들은 단독으로 또는 2종 이상을 혼합하여 이방 도전성 필름용 조성물에 포함될 수 있다.As said other binder resin, polyimide resin, polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyesterurethane resin, polyvinyl butyral resin, styrene Butyrene-styrene (SBS) resin and epoxy modified body, styrene- ethylene-butylene- styrene (SEBS) resin and its modified body, or acrylonitrile butadiene rubber (NBR), its hydrogenated body, etc. are mentioned. Can be. These may be contained in the composition for anisotropic conductive films individually or in mixture of 2 or more types.
상기 공중합 화합물 이외의 다른 바인더 수지를 추가로 포함하는 경우, 상기 다른 바인더 수지의 함량은 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로 1 중량% 내지 20 중량%로 포함될 수 있다.When another binder resin other than the copolymerization compound is further included, the content of the other binder resin may be included in an amount of 1 wt% to 20 wt% based on the total weight of solids of the composition for anisotropic conductive films.
상기 에폭시 당량이 150g/eq 이하인 에폭시 수지는 특별히 제한되지 아니하며, 에폭시 당량이 150g/eq 이하이면 제한 없이 사용할 수 있다. 구체적으로 에폭시 당량이 80 내지 150g/eq인 에폭시 수지를 사용할 수 있으며 보다 구체적으로 90 내지 145g/eq인 에폭시 수지를 사용할 수 있다. 에폭시 당량이 상기 범위이면, 이방 도전성 필름의 점도와 유동 특성이 양호할 수 있으며 저온 속경화를 달성할 수 있는 이점이 있다.The epoxy resin having an epoxy equivalent of 150 g / eq or less is not particularly limited, and an epoxy equivalent of 150 g / eq or less may be used without limitation. Specifically, an epoxy resin having an epoxy equivalent of 80 to 150 g / eq may be used, and more specifically, an epoxy resin having 90 to 145 g / eq may be used. If the epoxy equivalent is in the above range, the viscosity and flow characteristics of the anisotropic conductive film may be good, there is an advantage that can achieve a low temperature rapid curing.
상기 에폭시 수지의 비제한적인 예로, 비스페놀 A형 에폭시 수지, 비스페놀 A형 에폭시 아크릴레이트 수지, 비스페놀 F형 에폭시 수지, 비스페놀 AD형 에폭시 수지, 비스페놀 E형 에폭시 수지 및 비스페놀 S형 에폭시 수지 등의 비스페놀형 에폭시 화합물; 폴리글리시딜 에테르 에폭시 수지, 폴리글리시딜 에스테르 에폭시 수지, 나프탈렌 에폭시 수지 등의 방향족 에폭시 화합물; 지환족 에폭시 화합물; 크레졸 노볼락형 에폭시 수지, 페놀 노볼락형 에폭시 수지 등의 노볼락형 에폭시 화합물; 글리시딜 아민계 에폭시 화합물; 글리시딜 에스테르계 에폭시 화합물; 비페닐 디글리시딜 에테르 에폭시 화합물 등을 들 수 있다. 구체적으로 상기 에폭시 수지는 지환족 에폭시 수지, 비스페놀형 에폭시 수지 또는 방향족 에폭시 수지일 수 있으며, 보다 구체적으로 지환족 에폭시 수지일 수 있다. 상기 지환족 에폭시 수지는 지환족 고리에 근접하여 에폭시 구조가 존재하므로 개환 반응이 빨라 다른 에폭시 수지에 비해 경화가 빠르게 일어날 수 있다. 상기 지환식 에폭시 수지는 지환족 고리에 직접 결합으로 연결되거나 다른 연결기를 통해 에폭시 구조가 존재하는 구조를 가진 것이면 제한 없이 사용할 수 있다.Non-limiting examples of the epoxy resins include bisphenol A epoxy resin, bisphenol A epoxy acrylate resin, bisphenol F epoxy resin, bisphenol AD epoxy resin, bisphenol E epoxy resin and bisphenol S epoxy resin Epoxy compounds; Aromatic epoxy compounds such as polyglycidyl ether epoxy resins, polyglycidyl ester epoxy resins and naphthalene epoxy resins; Alicyclic epoxy compounds; Novolak-type epoxy compounds, such as a cresol novolak-type epoxy resin and a phenol novolak-type epoxy resin; Glycidyl amine epoxy compounds; Glycidyl ester epoxy compounds; And biphenyl diglycidyl ether epoxy compounds. Specifically, the epoxy resin may be an alicyclic epoxy resin, a bisphenol type epoxy resin or an aromatic epoxy resin, and more specifically, an alicyclic epoxy resin. Since the cycloaliphatic epoxy resin has an epoxy structure in close proximity to the cycloaliphatic ring, the ring-opening reaction is fast, so that curing may occur faster than other epoxy resins. The alicyclic epoxy resin may be used without limitation as long as the alicyclic epoxy resin has a structure in which an epoxy structure is present through a direct bond or connected to another alicyclic ring.
일 실시예에서, 상기 에폭시 당량이 150g/eq 이하인 에폭시 수지는 액상인 에폭시 수지를 포함할 수 있다. 액상 에폭시 수지를 포함할 경우, 이를 포함하는 이방 도전성 필름용 조성물로 제조된 이방 도전성 필름에 유동성을 부여하고 경화 속도를 빠르게 할 수 있는 이점이 있다.In one embodiment, the epoxy equivalent of the epoxy equivalent of 150g / eq or less may include a liquid epoxy resin. In the case of including the liquid epoxy resin, there is an advantage that can impart fluidity to the anisotropic conductive film made of the composition for an anisotropic conductive film comprising the same and to speed the curing rate.
상기 에폭시 수지는 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로 20 중량% 내지 50 중량%로 포함될 수 있으며, 구체적으로 25 중량% 내지 45 중량%, 보다 구체적으로 30 중량% 내지 40 중량%로 포함될 수 있다. 상기 범위에서 경화가 충분히 일어날 수 있으며, 이를 포함하는 이방 도전성 필름용 조성물로 제조된 이방 도전성 필름의 접착력, 외관 등이 우수하고 신뢰성 후 안정적일 수 있다.The epoxy resin may be included in 20 to 50% by weight based on the total weight of solids of the composition for anisotropic conductive film, specifically 25 to 45% by weight, more specifically 30 to 40% by weight Can be. Curing may sufficiently occur in the above range, the adhesive strength, appearance, etc. of the anisotropic conductive film prepared with the composition for anisotropic conductive film comprising the same may be stable after reliability.
일 실시예에서, 상기 이방 도전성 필름용 조성물은 에폭시 당량이 150g/eq 이하인 에폭시 수지 외에, 에폭시 당량이 150g/eq 초과인 에폭시 수지를 추가로 포함할 수도 있다.In one embodiment, the composition for the anisotropic conductive film may further include an epoxy resin having an epoxy equivalent of more than 150g / eq in addition to the epoxy resin having an epoxy equivalent of 150g / eq or less.
상기 이방 도전성 필름용 조성물은, 상기 공중합 화합물과 상기 에폭시 당량이 150g/eq 이하인 에폭시 수지를 함께 포함함으로써, 고온에서 흐름성이 조절되어 도전 입자의 포착율을 개선할 수 있고, 저온 속경화가 가능하며 접착력 및 접속저항 면에서 우수할 수 있다. 상기 에폭시 당량이 150g/eq 초과인 에폭시 수지를 추가로 포함하는 경우, 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로 1 중량% 내지 10 중량%로 포함될 수 있다.The composition for the anisotropic conductive film includes the copolymer compound and an epoxy resin having an epoxy equivalent of 150 g / eq or less, thereby controlling flowability at high temperatures, thereby improving the rate of trapping of conductive particles, and enabling low temperature rapid curing. It can be excellent in adhesive strength and connection resistance. When the epoxy equivalent additionally contains more than 150g / eq epoxy resin, it may be included in 1% by weight to 10% by weight based on the total weight of solids of the composition for anisotropic conductive film.
상기 도전 입자는 특별히 제한되지 아니하며 당해 기술분야에서 통상적으로 사용하는 도전 입자를 사용할 수 있다. 사용 가능한 도전 입자의 비제한적인 예로는 Au, Ag, Ni, Cu, 땜납 등을 포함하는 금속 입자; 탄소; 폴리에틸렌, 폴리프로필렌, 폴리에스테르, 폴리스타이렌, 폴리비닐알코올 등을 포함하는 수지 및 그 변성 수지를 입자로 하여 Au, Ag, Ni 등을 포함하는 금속으로 도금 코팅한 입자; 그 위에 절연 입자를 추가로 코팅한 절연화 처리된 도전 입자 등을 들 수 있다. 상기 도전 입자의 크기는, 적용되는 회로의 피치(pitch)에 따라, 예를 들어 1㎛ 내지 20㎛ 범위, 구체적으로 1㎛ 내지 10㎛의 범위일 수 있다.The conductive particles are not particularly limited and may be used conductive particles commonly used in the art. Non-limiting examples of the conductive particles that can be used include metal particles including Au, Ag, Ni, Cu, solder, and the like; carbon; Particles coated with a metal containing Au, Ag, Ni, etc., using resins containing polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol, and the like, and modified resins thereof as particles; Insulated electroconductive particle etc. which coat | covered the insulating particle further on it are mentioned. The size of the conductive particles may be, for example, in the range of 1 μm to 20 μm, specifically 1 μm to 10 μm, depending on the pitch of the circuit applied.
상기 도전 입자는 이방 도전성 필름용 조성물의 고형분 총 중량에 대하여 1 중량% 내지 30 중량%로 포함될 수 있으며, 구체적으로는 10 중량% 내지 25 중량%로 포함될 수 있고, 보다 구체적으로는 15 중량% 내지 20 중량%로 포함될 수 있다. 상기 범위에서 도전 입자가 단자 간에 용이하게 압착되어 안정적인 접속 신뢰성을 확보할 수 있으며, 통전성 향상으로 접속 저항을 감소시킬 수 있다.The conductive particles may be included in an amount of 1 wt% to 30 wt%, specifically 10 wt% to 25 wt%, and more specifically 15 wt% to about the total weight of solids of the composition for anisotropic conductive films. It may be included in 20% by weight. In the above range, the conductive particles can be easily pressed between the terminals to ensure stable connection reliability, and the connection resistance can be reduced by improving the conductance.
상기 경화제는 에폭시 경화용 타입의 경화제이면 특별한 제한 없이 사용할 수 있으며, 비제한적인 예로는 산무수물계, 아민계, 이미다졸계, 히드라지드계, 양이온계 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용될 수 있다.The curing agent may be used without particular limitation as long as it is a curing agent of the epoxy curing type, non-limiting examples include acid anhydrides, amines, imidazoles, hydrazides, cationics and the like. These can be used individually or in mixture of 2 or more types.
구체적으로, 상기 경화제는 양이온계일 수 있으며, 예를 들어 암모늄/안티몬 헥사플루오라이드 등을 들 수 있다.Specifically, the curing agent may be cationic, and examples thereof include ammonium / antimony hexafluoride and the like.
상기 경화제는 상온에서 에폭시 수지와 혼합하여 사용되므로, 혼합 후 상온에서 에폭시 수지와 반응성을 갖지 않아야 하고, 일정 온도 이상에서 활성을 가져 에폭시 수지와 반응이 활발하게 이루어져 물성이 발현되어야 한다. 따라서, 상기 경화제는 열적 활성화 에너지에 의해 양이온을 발생할 수 있는 화합물을 사용할 수 있으며, 예를 들어 양이온 잠재성 경화제를 사용할 수 있다.Since the curing agent is used by mixing with the epoxy resin at room temperature, it should not have reactivity with the epoxy resin at room temperature after mixing, it has to be active at a certain temperature or more to be active with the epoxy resin to be expressed physical properties. Thus, the curing agent may use a compound capable of generating a cation by thermal activation energy, for example, a cationic latent curing agent.
구체적으로, 상기 양이온 잠재성 경화제로는 방향족 디아조늄염, 방향족 설포늄염, 지방족 설포늄염, 방향족 요오드 알루미늄염, 포스포늄염, 피리디늄염, 세레노니움염 등의 오늄염 화합물; 금속 아렌(arene) 착제, 실라놀/알루미늄 착제 등의 착제화합물; 벤조인토시레토(Benzoin tosylato-), o-니트로벤질토시레토(ortho-Nitrobenzyl tosylato-) 등의 토시레이토기가 포함되어 전자 포획(capture) 작용을 하는 화합물 등을 사용할 수 있다. 보다 구체적으로, 양이온 발생 효율이 높은 방향족 설포늄염 화합물 또는 지방족 설포늄염 화합물 등의 설포늄염 화합물을 사용할 수 있다.Specifically, the cationic latent curing agent includes onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodine aluminum salts, phosphonium salts, pyridinium salts, and serenium salts; Complex compounds such as metal arene complexes and silanol / aluminum complexes; Compounds having an electron capturing function, including tosyreto groups such as benzoin tosylato- and o-nitrobenzyl tosylato-, may be used. More specifically, sulfonium salt compounds such as aromatic sulfonium salt compounds or aliphatic sulfonium salt compounds having high cation generation efficiency can be used.
또한 이러한 상기 양이온 잠재성 경화제가 염 구조를 이룰 경우에는, 반응성 측면염을 형성할 시에 카운터(counter) 이온으로서 헥사플루오르안티모네이트, 헥사플루오르포스페이트, 테트라 플루오르 보레이트, 펜타플루오르페닐 보레이트 등을 사용할 수 있다.In addition, when such a cationic latent curing agent forms a salt structure, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt. Can be.
상기 경화제는 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로 0.5 중량% 내지 10 중량%로 포함될 수 있다. 구체적으로 2 중량% 내지 7 중량% 포함될 수 있다. 상기 범위 내에서, 경화에 필요한 충분한 반응이 일어나며 적당한 분자량 형성을 통해 본딩 후 접착력, 신뢰성 등에서 우수한 물성을 기대할 수 있다.The curing agent may be included in 0.5 wt% to 10 wt% based on the total weight of solids of the composition for anisotropic conductive film. Specifically, 2 wt% to 7 wt% may be included. Within this range, sufficient reaction occurs for curing and excellent physical properties can be expected in bonding strength, reliability and the like after bonding through the formation of a suitable molecular weight.
또한, 본 발명의 이방 도전성 필름용 조성물은 기본 물성을 저해하지 않으면서 부가적인 물성을 제공하기 위해, 중합방지제, 산화방지제, 열안정제 등의 첨가제를 추가로 포함할 수 있다. 첨가제는 특별히 제한되지 않지만, 이방 도전성 필름용 조성물의 고형분 총 중량에 대하여 0.01 중량% 내지 10 중량%로 포함될 수 있다.In addition, the composition for anisotropic conductive film of the present invention may further include additives such as polymerization inhibitors, antioxidants, heat stabilizers, to provide additional physical properties without inhibiting the basic physical properties. The additive is not particularly limited, but may be included in an amount of 0.01 wt% to 10 wt% based on the total weight of solids of the composition for anisotropic conductive films.
비제한적인 예로, 중합방지제는 하이드로퀴논, 하이드로퀴논 모노메틸에테르, p-벤조퀴논, 페노티아진 및 이들의 혼합물로 이루어진 군으로부터 선택될 수 있다. 또한 산화방지제는 페놀릭계 또는 하이드록시 신나메이트계 물질 등을 사용할 수 있으며, 구체적으로 테트라키스-(메틸렌-(3,5-디-t-부틸-4-하이드록신나메이트)메탄, 3,5-비스(1,1-디메틸에틸)-4-하이드록시 벤젠 프로판산 티올 디-2,1-에탄다일 에스테르 등을 사용할 수 있다.As a non-limiting example, the anti-polymerization agent can be selected from the group consisting of hydroquinone, hydroquinone monomethyl ether, p-benzoquinone, phenothiazine and mixtures thereof. In addition, the antioxidant may be a phenolic or hydroxy cinnamate-based material, and specifically, tetrakis- (methylene- (3,5-di-t-butyl-4-hydroxycinnamate) methane, 3,5 -Bis (1,1-dimethylethyl) -4-hydroxy benzene propanoic acid thiol di-2,1-ethanediyl ester and the like can be used.
이하, 본 발명의 다른 실시예에 따른 이방 도전성 필름에 대해 설명한다.Hereinafter, an anisotropic conductive film according to another embodiment of the present invention will be described.
본 실시예에 따른 이방 도전성 필름은 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물을 포함하며, 상기 필름을 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa의 조건에서 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착 후 측정한 하기 식 1에 따른 입자포착율이 30% 이상이고, 접착력이 10 MPa 이상일 수 있다.The anisotropic conductive film according to the present embodiment includes a copolymer compound of a fluorene-based compound and a bisphenol-type epoxy compound, and the film is press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, The particle capture rate according to Equation 1 measured after main compression under 120 ° C. to 160 ° C. for 3 to 6 seconds and under a pressure condition of 60 MPa to 80 MPa may be 30% or more, and the adhesive force may be 10 MPa or more.
상기 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물에 대하여는 앞의 실시예에서 설명한 것과 동일한 것을 사용할 수 있다.As the copolymer compound of the fluorene-based compound and the bisphenol-type epoxy compound, the same compounds as described in the previous examples can be used.
상기 이방 도전성 필름은, 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa의 조건에서 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착 후 측정한 하기 식 1에 따른 입자포착율이 30% 이상일 수 있다.The anisotropic conductive film is press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and measured after main compression under pressure conditions of 120 ° C. to 160 ° C., 3 to 6 seconds and 60 MPa to 80 MPa. The particle capture rate according to Equation 1 may be 30% or more.
[식 1][Equation 1]
입자포착율(%) = (가압착 및 본압착 후 접속 부위의 단위면적당(mm2) 도전 입자의 수 /가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수) × 100Particle capture rate (%) = (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) × 100
상기 입자포착율은 구체적으로 40% 이상일 수 있으며, 보다 구체적으로 50% 이상일 수 있다. 상기 범위에서 도전층의 유동성이 효과적으로 억제되어 단자 상에 도전 입자가 충분히 위치하여 통전성이 개선되고, 도전 입자의 유출을 감소시켜 단자 간 쇼트를 감소시킬 수 있다.The particle capture rate may be specifically 40% or more, more specifically 50% or more. In the above range, the fluidity of the conductive layer is effectively suppressed, so that the conductive particles are sufficiently positioned on the terminals to improve the electrical conductance, and the outflow of the conductive particles can be reduced to reduce the short between terminals.
상기 입자포착율을 측정하는 방법은 특별히 제한되지 아니하며, 비제한적인 일 예는 다음과 같다: 제조된 이방 도전성 필름에 대해, 가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수를 입자자동측정기를 사용하여 산출한다. 이후, 이방 도전성 필름을 제 1 피접속부재와 제 2 피접속부재 사이에 위치시키고 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa의 조건에서 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착한 후, 접속 부위의 단위면적당(mm2) 도전 입자의 수를 입자자동측정기를 사용하여 산출하고 상기 식 1에 의해 입자포착율을 계산한다.The method for measuring the particle capture rate is not particularly limited, and one non-limiting example is as follows: For the prepared anisotropic conductive film, the number of conductive particles (mm 2 ) per unit area of the anisotropic conductive film before pressing is determined. Calculate using a particle counter. Thereafter, the anisotropic conductive film is placed between the first to-be-connected member and the second to-be-connected member and press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and 120 ° C. to 160 ° C., 3 After main compression for 6 seconds and under a pressure condition of 60 MPa to 80 MPa, the number of (mm 2 ) conductive particles per unit area of the connection site is calculated using a particle automatic measuring device, and the particle capture rate is calculated by the above equation 1.
또한, 상기 이방 도전성 필름은 상기 가압착 및 본압착 후 측정한 접착력이 10 MPa 이상일 수 있으며, 구체적으로 20 MPa 이상, 보다 구체적으로 30 MPa 이상일 수 있다. 이방 도전성 필름의 접착력이 상기 범위일 경우 이를 이용한 디스플레이 장치의 장기간 사용이 가능한 장점이 있다.In addition, the anisotropic conductive film may have a bonding strength of 10 MPa or more, specifically, 20 MPa or more, more specifically 30 MPa or more, after the pressure bonding and the main compression. When the adhesive strength of the anisotropic conductive film is in the above range there is an advantage that can be used for a long time using the display device.
상기 접착력 측정 방법의 비제한적인 예는 다음과 같다: 제조된 이방 도전성 필름을 범프면적 1200㎛2, 두께 2000Å의 인듐틴옥사이드 회로가 있는 유리 기판에 놓고 각각 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa로 가압착 후, 이형 필름을 제거하고 범프면적 1200㎛2, 두께 1.5T의 IC칩을 올린 뒤 이를 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 조건으로 본압착하여 시편을 제조하고, 이를 Maximum load: 200kgf, Test speed : 100um/sec의 조건으로 필 강도 측정기(Bond tester Dage Series-4000)를 이용하여 측정한다.Non-limiting examples of the adhesion measurement method are as follows: The prepared anisotropic conductive film was placed on a glass substrate having an indium tin oxide circuit having a bump area of 1200 µm 2 and a thickness of 2000 kPa for 50 ° C. to 80 ° C. for 1 to 3 seconds, respectively. And after press-bonding at 1.0MPa to 3.0MPa, the release film was removed and the bump chip area of 1200㎛ 2 , 1.5T thick IC chip was raised and viewed under the conditions of 120 ℃ to 160 ℃, 3-6 seconds and 60MPa to 80MPa The specimen is prepared by pressing, and measured using a peel strength tester (Bond tester Dage Series-4000) under conditions of Maximum load: 200kgf, Test speed: 100um / sec.
상기 이방 도전성 필름은 에폭시 당량이 150g/eq 이하인 에폭시 수지, 도전 입자 및 경화제를 추가로 포함할 수 있다. 상기 성분들에 대하여는, 앞의 실시예에서 설명한 것과 동일한 것을 사용할 수 있다.The anisotropic conductive film may further include an epoxy resin, conductive particles, and a curing agent having an epoxy equivalent of 150 g / eq or less. For the above components, the same ones as described in the previous embodiment can be used.
일 실시예에서, 상기 이방 도전성 필름은 COG(chip on glass) 또는 COF(chip on film) 실장 방식에 사용되는 것일 수 있다.In one embodiment, the anisotropic conductive film may be used in a chip on glass (COG) or chip on film (COF) mounting method.
상기 이방 도전성 필름은, ARES 측정에 따른 30℃ 내지 200℃에서의 최저 용융 점도가 5,000 내지 20,000Pa·s일 수 있으며, 구체적으로 6,000 내지 10,000Pa·s일 수 있다. 상기 범위에서 충분한 접착력이 발현될 수 있고, 가압착성이 향상될 수 있으며 단자 간의 절연층이 충분히 충진되어 접속 신뢰성을 향상시킬 수 있다.The anisotropic conductive film may have a minimum melt viscosity of 5,000 to 20,000 Pa · s at 30 ° C. to 200 ° C. according to the ARES measurement, and specifically, may be 6,000 to 10,000 Pa · s. In the above range, sufficient adhesive force may be expressed, pressure adhesion may be improved, and an insulating layer between terminals may be sufficiently filled to improve connection reliability.
상기 최저 용융 점도를 측정하는 방법은 특별히 제한되지 않으며, 비제한적인 예는 다음과 같다: ARES G2 레오미터(TA Instruments)를 이용하여, 샘플 두께 150㎛, 승온속도 10℃/분, 스트레스 5%, 프리퀀시 10rad/초로 30℃ 내지 200℃ 구간에서 이방 도전성 필름의 최저 용융 점도를 측정한다.The method of measuring the minimum melt viscosity is not particularly limited, and non-limiting examples are as follows: using an ARES G2 rheometer (TA Instruments), sample thickness 150 μm, temperature increase rate 10 ° C./min, stress 5% The lowest melt viscosity of the anisotropic conductive film is measured in the range of 30 ° C. to 200 ° C. at a frequency of 10 rad / sec.
또한 상기 이방 도전성 필름은 하기 식 2에 따른 경화율이 80% 이상일 수 있으며, 구체적으로 85% 이상, 보다 구체적으로 90% 이상일 수 있다.In addition, the anisotropic conductive film may have a curing rate of 80% or more according to the following Equation 2, specifically 85% or more, more specifically 90% or more.
[식 2][Equation 2]
경화율(%) = [(H0-H1)/H0]×100Curing Rate (%) = [(H 0 -H 1 ) / H 0 ] × 100
상기 식 2에서, H0는 이방 도전성 필름을 DSC(열시차주사열량계, TA instruments, Q20)를 이용하여 질소 가스 분위기 하에서 10℃/min, -50℃ 내지 250℃ 온도 구간에서 곡선아래 면적으로 측정한 초기 발열량이고, H1은 핫플레이트(hot plate) 상에 130℃ 에서 5초간 방치한 후 동일한 방법으로 측정한 발열량을 나타낸다.In Equation 2, H 0 is an anisotropic conductive film is measured by the area under the curve at 10 ℃ / min, -50 ℃ to 250 ℃ temperature section using a DSC (thermodifferential scanning calorimetry, TA instruments, Q20) One initial calorific value, H 1 represents the calorific value measured by the same method after leaving for 5 seconds at 130 ℃ on a hot plate (hot plate).
경화율이 상기 범위인 것은, 예컨대 130℃의 저온에서 5초의 단시간에 경화가 신속히 진행되는 것을 반영하므로 이방 도전성 필름의 저온 속경화 특성과 관련이 있다.The curing rate in the above range is related to the low temperature fast curing property of the anisotropic conductive film because it reflects the rapid progress of curing in a short time of 5 seconds at a low temperature of 130 ° C., for example.
다른 실시예에서, 상기 이방 도전성 필름은 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa로 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착한 후 측정한 초기 접속 저항이 1.0Ω 이하일 수 있다. 구체적으로 0.7Ω 이하, 보다 구체적으로 0.5Ω 이하일 수 있다.In another embodiment, the anisotropic conductive film is press-bonded at 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and main compression under pressure conditions of 120 ° C. to 160 ° C., 3 to 6 seconds and 60 MPa to 80 MPa. After the measured initial connection resistance may be less than 1.0Ω. Specifically, it may be 0.7Ω or less, more specifically 0.5Ω or less.
또한, 상기 이방 도전성 필름은, 상기 가압착 및 본압착 후, 온도 85℃ 및 상대 습도 85%의 조건 하에서 500시간 동안 방치하여 측정한 신뢰성 평가 후 접속 저항이 3Ω 이하일 수 있다. 구체적으로 2Ω 이하일 수 있으며, 보다 구체적으로 1Ω 이하일 수 있다.In addition, the anisotropic conductive film, after the pressure bonding and the main compression, the connection resistance may be 3Ω or less after the reliability evaluation measured by standing for 500 hours under the conditions of the temperature 85 ℃ and 85% relative humidity. Specifically, it may be 2Ω or less, and more specifically 1Ω or less.
상기 초기 접속저항 및 신뢰성 평가 후 접속저항 범위를 갖는 이방 도전성 필름은, 접속 신뢰성을 개선시킬 수 있을 뿐만 아니라 장기간 저장 안정성을 유지하며 사용할 수 있는 이점이 있다.The anisotropic conductive film having the connection resistance range after the initial connection resistance and the reliability evaluation has the advantage of not only improving the connection reliability but also maintaining the long-term storage stability.
상기 초기 접속저항 및 신뢰성 평가 후 접속 저항을 측정하는 방법은 특별히 제한되지 아니하며, 비제한적인 예는 다음과 같다: 이방 도전성 필름을 범프면적 1200㎛2, 두께 2000Å의 인듐틴옥사이드 회로가 있는 유리 기판에 놓고 각각 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa로 가압착 후, 이형 필름을 제거하고 범프면적 1200㎛2, 두께 1.5T의 IC칩을 올린 뒤 이를 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 조건으로 본압착하여 시편을 제조하고, 4 point probe법을 사용하여 4 point 사이에서의 저항을 측정하여 초기 접속저항으로 나타낸다. 이후, 상기 본압착하여 제조된 시편을 온도 85℃ 및 상대 습도 85%의 조건 하에서 500시간 동안 방치한 후 동일한 방법으로 저항을 측정하여 이를 신뢰성 평가 후 접속저항으로 나타낸다. 저항측정기기는 1mA를 인가하며 이때 측정되는 전압으로 저항을 계산하여 평균을 내어 표시한다.The method for measuring the connection resistance after the initial connection resistance and the reliability evaluation is not particularly limited, and non-limiting examples are as follows: An anisotropic conductive film is a glass substrate having an indium tin oxide circuit having a bump area of 1200 µm 2 and a thickness of 2000 GPa. After pressing and pressing at 50 ° C. to 80 ° C., 1 to 3 seconds, and 1.0 MPa to 3.0 MPa, respectively, the release film was removed and the IC chip having a bump area of 1200 μm 2 and a thickness of 1.5T was placed thereon, and then 120 ° C. to 160 ° C. , The specimen was prepared by main compression under the conditions of 3 to 6 seconds and 60 MPa to 80 MPa, and the resistance between 4 points was measured using the 4 point probe method and expressed as initial connection resistance. Thereafter, the specimen prepared by the main compression was allowed to stand for 500 hours under a condition of 85 ° C. and a relative humidity of 85%, and then the resistance was measured in the same manner. The resistance measuring instrument applies 1mA and calculates and displays the resistance with the measured voltage.
일 실시예에서, 상기 이방 도전성 필름은 도전층의 일면 또는 양면에 절연층이 적층되는 구조일 수 있다. 즉, 도전층 및 절연층이 적층된 2층형 구조 또는 절연층에 도전층이 적층되어 있고, 상기 도전층에 절연층이 적층된 3층형 구조일 수 있으며, 필요에 따라 도전층 및 절연층이 4층 이상으로 적층된 복층형 구조일 수 있다.In one embodiment, the anisotropic conductive film may have a structure in which an insulating layer is laminated on one side or both sides of the conductive layer. That is, a two-layer structure in which a conductive layer and an insulating layer are laminated or a conductive layer may be laminated in an insulating layer, and the insulating layer may be a three-layer structure in which the insulating layer is laminated. It may be a multilayer structure laminated in layers or more.
상기 용어 “적층”이란, 임의의 층의 일면에 다른 층이 형성되는 것을 의미하며, 코팅 또는 라미네이션과 혼용하여 사용할 수 있다. 도전층과 절연층을 별도로 포함하는 복층형 구조의 이방 도전성 필름의 경우, 층이 분리되어 있으므로 실리카 등의 무기 입자의 함량이 높더라도, 도전 입자의 압착을 방해하지 않기 때문에 도전성에 영향을 주지 않고, 이방 도전성 필름용 조성물의 흐름성에는 영향을 줄 수 있으므로, 유동성이 제어된 이방 도전성 필름을 제조할 수 있다.The term “lamination” means that another layer is formed on one surface of an arbitrary layer, and may be used in combination with a coating or lamination. In the case of an anisotropic conductive film having a multilayered structure including a conductive layer and an insulating layer separately, even if the content of inorganic particles such as silica is high, since the layers are separated, the conductive particles do not interfere with the crimping of the conductive particles. Since the flowability of the composition for anisotropic conductive films can be influenced, the anisotropic conductive film by which fluidity was controlled can be manufactured.
본 발명의 다른 실시예는, 이방 도전성 필름의 제조방법에 관한 것이다. 본 발명의 이방 도전성 필름을 형성하는 데에는 특별한 장치나 설비가 필요하지 않다. 예를 들면, 본원에 개시된 각 조성을 포함하는 이방 도전성 필름용 조성물을 톨루엔과 같은 유기 용매에 용해시켜 액상화한 후 도전성 입자가 분쇄되지 않는 속도 범위 내에서 일정 시간 동안 교반하고, 이를 이형 필름 위에 일정한 두께 예를 들면 10㎛ 내지 50㎛의 두께로 도포한 다음 일정시간 건조시켜 톨루엔 등을 휘발시킴으로써 이방 도전성 필름을 얻을 수 있다.Another embodiment of the present invention relates to a method for producing an anisotropic conductive film. No particular apparatus or equipment is necessary to form the anisotropic conductive film of the present invention. For example, after dissolving the composition for anisotropic conductive film including each composition disclosed herein in an organic solvent such as toluene and liquefying, stirring for a predetermined time within a rate range in which the conductive particles are not crushed, it is a constant thickness on the release film For example, an anisotropic conductive film can be obtained by applying a thickness of 10 μm to 50 μm and then drying for a predetermined time to volatilize toluene or the like.
이하, 본 발명의 또 다른 실시예에 따른 디스플레이 장치에 대해 설명한다.Hereinafter, a display apparatus according to still another embodiment of the present invention will be described.
상기 디스플레이 장치는, 제1 전극을 함유하는 제1 피접속부재; 제2 전극을 함유하는 제2 피접속부재; 및 상기 제1 피접속부재와 상기 제2 피접속부재 사이에 위치하여 상기 제1 전극 및 상기 제2 전극을 접속시키는, 본 명세서에 기재된 실시예들에 따른 이방 도전성 필름에 의해 접속된 디스플레이 장치일 수 있다.The display device includes a first to-be-connected member containing a first electrode; A second to-be-connected member containing a second electrode; And a display device connected between the first to-be-connected member and the second to-be-connected member and connected by the anisotropic conductive film according to the embodiments described herein to connect the first electrode and the second electrode. Can be.
상기 제1 피접속부재 또는 제2 피접속부재는, 전기적 접속을 필요로 하는 전극이 형성되어 있는 것으로, 구체적으로는, 액정 디스플레이에 사용되고 있는 ITO(Indium Tin Oxide) 또는 IZO(Indium Zinc Oxide) 등의 전극이 형성되어 있는 유리 기판 또는 플라스틱 기판, 프린트 배선판, 세라믹 배선판, 플렉시블 배선판, 반도체 실리콘 칩, IC칩 또는 드라이버 IC칩일 수 있고, 보다 구체적으로는, 제1 피접속부재 및 제2 피접속부재 중 어느 하나가 IC칩 또는 드라이버 IC칩이고 다른 하나가 유리 기판일 수 있다.The first to-be-connected member or the second to-be-connected member is formed with an electrode that requires electrical connection. Specifically, indium tin oxide (ITO) or indium zinc oxide (IZO) or the like used in a liquid crystal display It may be a glass substrate or a plastic substrate, a printed wiring board, a ceramic wiring board, a flexible wiring board, a semiconductor silicon chip, an IC chip or a driver IC chip on which electrodes of the electrode are formed, and more specifically, the first connected member and the second connected member. Either one may be an IC chip or a driver IC chip and the other may be a glass substrate.
도 1을 참조하여 디스플레이 장치(30)를 설명하면, 제1 전극(70)을 함유하는 제1 피접속부재(50)와, 제2 전극(80)을 포함하는 제2 피접속부재(60)는, 상기 제1 피접속부재와 상기 제2 피접속부재 사이에 위치하여 상기 제1 전극 및 상기 제2 전극을 접속시키는 본원에 기재된 도전 입자(3)을 포함하는 이방 도전성 필름(10)을 통해 상호 접착될 수 있다.Referring to FIG. 1, the display device 30 will be described. The first connected member 50 including the first electrode 70 and the second connected member 60 including the second electrode 80 may be described. Is an anisotropic conductive film (10) comprising conductive particles (3) as described herein, which is located between the first to-be-connected member and the second to-be-connected member to connect the first electrode and the second electrode. Can be bonded together.
이하, 본 발명의 바람직한 실시예를 통해 본 발명의 구성 및 작용을 더욱 상세히 설명하기로 한다. 다만, 이는 본 발명의 바람직한 예시로 제시된 것이며 어떠한 의미로도 이에 의해 본 발명이 제한되는 것으로 해석될 수는 없다.Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.
여기에 기재되지 않은 내용은 이 기술 분야에서 숙련된 자이면 충분히 기술적으로 유추할 수 있는 것이므로 그 설명을 생략하기로 한다.Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.
실시예Example
제조예Production Example 1 내지 4: 공중합 화합물의 제조 1 to 4: Preparation of Copolymer Compound
제조예Production Example 1: 공중합 화합물 1의 제조 1: Preparation of Copolymer Compound 1
9,9'-Bis(4-hydroxyphenyl)fluorene 14g과 비스페놀 F형 에폭시 수지(YSLV-80XY, 국도화학) 16g을 PGMEA 30g에 녹인 뒤, 2-Methyl imidazole 0.1g을 첨가하고 110℃에서 24시간 교반하였다. 교반 후 메탄올과 물을 이용하여 세척한 뒤, 형성된 침전을 건조시켜 하기 구조를 갖는 공중합 화합물 1(Tg:170℃, 중량평균분자량:25,000)을 제조하였다.14 g of 9,9'-Bis (4-hydroxyphenyl) fluorene and 16 g of bisphenol F-type epoxy resin (YSLV-80XY, Kukdo Chemical) were dissolved in 30 g of PGMEA, 0.1 g of 2-Methyl imidazole was added and stirred at 110 ° C. for 24 hours. It was. After stirring, the mixture was washed with methanol and water, and then the precipitate formed was dried to prepare Copolymer Compound 1 (Tg: 170 ° C, weight average molecular weight: 25,000) having the following structure.
[공중합 화합물 1][Copolymerization Compound 1]
Figure PCTKR2016004417-appb-I000005
Figure PCTKR2016004417-appb-I000005
제조예Production Example 2: 공중합 화합물 2의 제조 2: Preparation of Copolymer Compound 2
9,9'-Bis(4-hydroxyphenyl)fluorene 15g과 비스페놀 A형 에폭시 수지(JER834, Mitsubishi Chemical) 10g을 PGMEA 30g에 녹인 뒤, 2-Methyl imidazole 0.1g을 첨가하고 110℃에서 24시간 교반하였다. 교반 후 메탄올과 물을 이용하여 세척한 뒤, 형성된 침전을 건조시켜 하기 구조를 갖는 공중합 화합물 2(Tg:165℃, 중량평균분자량:20,000)를 제조하였다.15 g of 9,9'-Bis (4-hydroxyphenyl) fluorene and 10 g of bisphenol A epoxy resin (JER834, Mitsubishi Chemical) were dissolved in 30 g of PGMEA, 0.1 g of 2-Methyl imidazole was added thereto, and the mixture was stirred at 110 ° C. for 24 hours. After stirring, the mixture was washed with methanol and water, and then the precipitate formed was dried to prepare Copolymer Compound 2 (Tg: 165 ° C., weight average molecular weight: 20,000) having the following structure.
[공중합 화합물 2][Copolymerization Compound 2]
Figure PCTKR2016004417-appb-I000006
Figure PCTKR2016004417-appb-I000006
제조예Production Example 3: 공중합 화합물 3의 제조 3: Preparation of Copolymer Compound 3
9,9'-Bis(4-hydroxyphenyl)fluorene 15g과 비스페놀 F형 에폭시 수지로 1,1'-Bis(4-hydroxyphenyl)methane 10g을 PGMEA 30g에 녹인 뒤, 2-Methyl imidazole 0.1g을 첨가하고 110℃에서 24시간 교반하였다. 교반 후 메탄올과 물을 이용하여 세척한 뒤, 형성된 침전을 건조시켜 하기 구조를 갖는 공중합 화합물 3(Tg:165℃, 중량평균분자량:22,000)을 제조하였다.Dissolve 10 g of 1,1'-Bis (4-hydroxyphenyl) methane in 30 g of PGMEA with 15 g of 9,9'-Bis (4-hydroxyphenyl) fluorene and bisphenol F-type epoxy resin, add 0.1 g of 2-Methyl imidazole, and add 110 g. It stirred at 24 degreeC. After stirring, the mixture was washed with methanol and water, and then the precipitate formed was dried to prepare Copolymer Compound 3 (Tg: 165 ° C., weight average molecular weight: 22,000) having the following structure.
[공중합 화합물 3][Copolymer Compound 3]
Figure PCTKR2016004417-appb-I000007
Figure PCTKR2016004417-appb-I000007
실시예Example  And 비교예Comparative example
실시예Example 1 One
필름 형성을 위한 매트릭스 역할의 바인더 수지로 상기 제조예 1에서 제조된 공중합 화합물 1을 40 중량부, 에폭시 당량이 130g/eq인 에폭시 수지(Daicel celloxide 2021P) 35 중량부, 열경화성 잠재성 경화제(HX3741, 아사히화성, 일본) 5 중량부, 이방 도전성 필름에 도전 성능을 부여해주기 위한 필러로서 절연화 처리된 도전 입자(AUL-704, 평균입경 4um, SEKISUI사, 일본) 20 중량부를 혼합하여 이방 도전성 필름용 조성물을 제조하였다. 상기 이방 도전성 필름용 조성물을 이형필름 위에 도포한 후, 70℃ 건조기에서 5분간 용제를 휘발시켜 15㎛ 두께의 건조된 이방 도전성 필름을 얻었다.40 parts by weight of the copolymer compound 1 prepared in Preparation Example 1 as a binder resin for forming a film, 35 parts by weight of an epoxy resin (Daicel celloxide 2021P) having an epoxy equivalent of 130 g / eq, a thermosetting latent curing agent (HX3741, Asahi Kasei, Japan) 5 parts by weight, for anisotropic conductive films by mixing 20 parts by weight of insulated conductive particles (AUL-704, average particle size 4um, SEKISUI, Japan) as a filler for imparting conductive performance to the anisotropic conductive film. The composition was prepared. After apply | coating the said composition for anisotropic conductive films on a release film, the solvent was volatilized for 5 minutes in a 70 degreeC dryer, and the 15-micrometer-thick dried anisotropic conductive film was obtained.
실시예Example 2 2
실시예 1에 있어서, 바인더 수지로 제조예 2에서 제조된 공중합 화합물 2를 사용하고, 에폭시 수지로서 에폭시 당량이 143g/eq인 에폭시 수지 2(HP4032D, Dinippon ink)를 사용한 것을 제외하고는 실시예 1과 동일한 조건 및 방법으로 실시예 2의 이방 도전성 필름을 제조하였다.Example 1, except that copolymer compound 2 prepared in Preparation Example 2 was used as the binder resin, and epoxy resin 2 (HP4032D, Dinippon ink) having an epoxy equivalent of 143 g / eq was used as the epoxy resin. An anisotropic conductive film of Example 2 was prepared under the same conditions and methods.
실시예Example 3 3
실시예 1에 있어서, 바인더 수지로 제조예 3에서 제조된 공중합 화합물 3을 사용하고, 에폭시 수지로서 에폭시 당량이 97g/eq인 에폭시 수지 3(JER630ESD, Japan epoxy resin)을 사용한 것을 제외하고는 실시예 1과 동일한 조건 및 방법으로 실시예 3의 이방 도전성 필름을 제조하였다.Example 1, except that copolymer compound 3 prepared in Preparation Example 3 was used as the binder resin, and epoxy resin 3 (JER630ESD, Japan epoxy resin) having an epoxy equivalent of 97 g / eq was used as the epoxy resin. The anisotropic conductive film of Example 3 was manufactured under the same conditions and methods as in Example 1.
비교예Comparative example 1 One
실시예 1에 있어서, 바인더 수지로 바이페닐 플루오렌형 바인더 수지(FX-293, 신일철 화학, Tg:165℃, 분자량:45,000)를 사용한 것을 제외하고는 실시예 1과 동일한 조건 및 방법으로 비교예 1의 이방 도전성 필름을 제조하였다.Comparative Example 1 was the same as in Example 1, except that biphenyl fluorene type binder resin (FX-293, Shin-Il Chem Chem, Tg: 165 ℃, molecular weight: 45,000) as the binder resin An anisotropic conductive film of 1 was prepared.
비교예Comparative example 2 2
실시예 1에 있어서, 에폭시 수지로서 에폭시 당량이 180g/eq인 에폭시 수지(YDPN 638, 국도화학)를 사용한 것을 제외하고는 실시예 1과 동일한 조건 및 방법으로 비교예 2의 이방 도전성 필름을 제조하였다.In Example 1, an anisotropic conductive film of Comparative Example 2 was prepared under the same conditions and methods as in Example 1, except that an epoxy resin (YDPN 638, Kukdo Chemical) having an epoxy equivalent of 180 g / eq was used as the epoxy resin. .
실험예Experimental Example
상기 제조된 실시예 1 내지 3 및 비교예 1 및 2의 이방 도전성 필름에 대해 하기 조건 및 방법으로 최저 용융 점도, 경화율, 입자포착율, 접착력 및 접속저항을 측정하고 그 결과를 아래 표 1에 나타내었다.For the anisotropic conductive films of Examples 1 to 3 and Comparative Examples 1 and 2 prepared above, the lowest melt viscosity, curing rate, particle capture rate, adhesive force, and connection resistance were measured by the following conditions and methods. Indicated.
실험예Experimental Example 1 : 최저  1: lowest 용융 점도Melt viscosity 측정 Measure
상기 실시예 및 비교예에서 제조된 이방 도전성 필름에 대해 ARES G2 레오미터(TA Instruments)를 이용하여, 샘플 두께 150㎛, 승온속도 10℃/분, 스트레스 5%, 프리퀀시 10rad/초로 30℃ 내지 200℃ 구간에서 최저 용융 점도를 측정하였다.Using the ARES G2 rheometer (TA Instruments) for the anisotropic conductive films prepared in the above Examples and Comparative Examples, the sample thickness is 150㎛, temperature rise rate 10 ℃ / min, stress 5%, frequency 10rad / sec 30 ℃ to 200 The lowest melt viscosity was measured in the ℃ section.
실험예Experimental Example 2 :  2 : 경화율의Hardening rate 측정 Measure
실시예 및 비교예에서 제조된 이방 도전성 필름을 1mg 분취하여 DSC(열시차주사열량계, TA instruments, Q20)를 이용하여 질소 가스 분위기 하에서 10℃/min, -50℃ 내지 250℃ 온도 구간에서의 초기 발열량을 곡선아래 면적으로 측정(H0)하고, 이후 상기 필름을 핫플레이트(hot plate) 상에 130℃ 에서 5초간 방치한 후 동일한 방법으로 발열량을 측정(H1)하여 이로부터 하기 식 2에 따른 경화율을 계산하였다.1 mg aliquots of the anisotropic conductive films prepared in Examples and Comparative Examples were used to obtain an initial temperature at 10 ° C./min, -50 ° C. to 250 ° C. under a nitrogen gas atmosphere using DSC (thermodifferential scanning calorimetry, TA instruments, Q20). The calorific value is measured by the area under the curve (H 0 ), and then the film is left on a hot plate for 5 seconds at 130 ° C., and then the calorific value is measured in the same manner (H 1 ), and the equation is obtained from Equation 2 below. The cure rate accordingly was calculated.
[식 2] [Equation 2]
경화율(%) = [(H0-H1)/H0]×100Curing Rate (%) = [(H 0 -H 1 ) / H 0 ] × 100
실험예Experimental Example 3 :  3: 입자포착율의Of particle capture rate 측정 Measure
상기 실시예 및 비교예에서 제조된 이방 도전성 필름에 대해, 가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수를 입자자동측정기(ZOOTUS)를 사용하여 산출하였다.For the anisotropic conductive films prepared in the above Examples and Comparative Examples, the number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressure bonding was calculated using a particle automatic measuring device (ZOOTUS).
또한, 이방 도전성 필름을 범프면적 1200㎛2, 두께 2000Å의 인듐틴옥사이드 회로가 있는 유리 기판(제조원: 네오뷰 코오롱)에 놓고 각각 70℃에서, 1초 동안 1MPa로 가압착한 후, 이형 필름을 제거하고 범프면적 1200㎛2, 두께 1.5T의 IC칩(제조원: 삼성 LSI)를 올린 뒤 이를 130℃에서 5초, 70MPa의 조건으로 본압착하고, 접속 부위의 단위면적당(mm2) 도전 입자의 수를 상기 입자자동측정기를 사용하여 산출하고 하기 식 1에 의해 입자포착율을 계산하였다.In addition, the anisotropic conductive film was placed on a glass substrate (manufactured by Neoview Kolon) having an indium tin oxide circuit having a bump area of 1200 µm 2 and a thickness of 2000 kPa, and press-bonded at 1 MPa for 1 second at 70 ° C., respectively, and then the release film was removed. Then, the IC chip (Samsung LSI) with a bump area of 1200㎛ 2 and 1.5T thickness was put up, and then they were main compressed at 130 ℃ for 5 seconds and 70MPa, and the number of conductive particles (mm 2 ) per unit area of the connection site was Was calculated using the particle size analyzer and particle capture rate was calculated by the following Equation 1.
[식 1][Equation 1]
입자포착율(%) = (가압착 및 본압착 후 접속 부위의 단위면적당(mm2) 도전 입자의 수 /가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수) × 100Particle capture rate (%) = (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) × 100
실험예Experimental Example 4 : 접착력의 측정 4: measurement of adhesion
상기 실시예 및 비교예에서 제조된 이방 도전성 필름을 범프면적 1200㎛2, 두께 2000Å의 인듐틴옥사이드 회로가 있는 유리 기판(제조원: 네오뷰 코오롱)에 놓고 각각 70℃에서, 1초 동안 1MPa로 가압착하였다. 상기 가압착 후, 이형 필름을 제거하고 범프면적 1200㎛2, 두께 1.5T의 IC칩(제조원: 삼성 LSI)을 올린 뒤 이를 130℃에서 5초, 70MPa의 조건으로 본압착하여 시편을 제조하고, 이를 Maximum load: 200kgf, Test speed : 100㎛/sec의 조건으로 필 강도 측정기(Bond tester Dage Series-4000)를 이용하여 각 시편당 총 3회 이상 측정하여 이들의 평균을 계산하였다.The anisotropic conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (manufactured by Neoview Kolon) with an indium tin oxide circuit having a bump area of 1200 μm 2 and a thickness of 2000 μm, respectively, and pressurized at 1 MPa for 1 second at 70 ° C. Good. After the press-bonding, the release film was removed and the bump area 1200 μm 2 and the thickness 1.5T IC chip (manufacturer: Samsung LSI) were put up and then pressed at 130 ° C. for 5 seconds at 70 MPa to prepare a specimen. The average of these was measured three times or more for each specimen using a peel strength tester (Bond tester Dage Series-4000) under the conditions of Maximum load: 200kgf, Test speed: 100㎛ / sec.
실험예Experimental Example 5 : 초기 및 신뢰성 평가 후 접속저항의 측정 5: Measurement of connection resistance after initial and reliability evaluation
상기 실시예 및 비교예에서 제조된 이방 도전성 필름을 범프면적 1200㎛2, 두께 2000Å의 인듐틴옥사이드 회로가 있는 유리 기판(제조원: 네오뷰 코오롱)에 놓고 각각 70℃에서, 1초 동안 1MPa로 가압착하였다. 상기 가압착 후, 이형 필름을 제거하고 범프면적 1200㎛2, 두께 1.5T의 IC칩(제조원: 삼성 LSI)를 올린 뒤 이를 130℃에서 5초, 70MPa의 조건으로 본압착하여 시편을 제조하고, 4 point probe법을 사용하여 4 point 사이에서의 저항을 측정하여 이를 초기 접속저항으로 나타내었다. 이후, 상기 본압착하여 제조된 시편을 온도 85℃ 및 상대 습도 85%의 조건 하에서 500시간 동안 방치한 후 동일한 방법으로 저항을 측정하여 이를 신뢰성 평가 후 접속저항으로 나타내었다.The anisotropic conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (manufactured by Neoview Kolon) with an indium tin oxide circuit having a bump area of 1200 μm 2 and a thickness of 2000 μm, respectively, and pressurized at 1 MPa for 1 second at 70 ° C. Good. After the press-bonding, the release film was removed and bumped area 1200 μm 2 , 1.5T thick IC chip (manufacturer: Samsung LSI) were put up, and then pressed at 5 ° C. under conditions of 70 MPa at 130 ° C. to prepare a specimen. The resistance between 4 points was measured using the 4 point probe method and this was expressed as initial connection resistance. Subsequently, the specimen prepared by main compression was allowed to stand for 500 hours under a condition of 85 ° C. and 85% relative humidity, and then the resistance was measured in the same manner.
저항측정기기는 1mA를 인가하며 이때 측정되는 전압으로 저항을 계산하여 평균을 내어 표시하였다.The resistance measuring instrument applies 1mA and calculates the average of the resistance by using the measured voltage.
실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예 1Comparative Example 1 비교예 2Comparative Example 2
최저 용융 점도(Pa·s)Melt Viscosity (Pas) 10,00010,000 7,0007,000 8,5008,500 25,00025,000 45,00045,000
경화율(%)Curing rate (%) 8787 8686 8888 6565 7070
입자포착율(%)Particle Capture Rate (%) 3333 3434 3232 1818 1616
접착력(MPa)Adhesive force (MPa) 3333 3232 3434 3030 2828
초기 접속저항(Ω)Initial connection resistance (Ω) 0.020.02 0.030.03 0.030.03 0.050.05 0.070.07
신뢰성 평가 후 접속저항(Ω)Connection resistance (Ω) after reliability evaluation 0.120.12 0.130.13 0.120.12 1.201.20 1.501.50
상기 표 1에서 나타난 바와 같이, 플루오렌계 화합물과 비스페놀형 에폭시 수지의 공중합 화합물; 및 에폭시 당량이 150g/eq 이하인 에폭시 수지를 포함하는 실시예 1 내지 3의 이방 도전성 필름은 최저 용융 점도, 경화율, 입자포착율, 접착력, 초기 및 신뢰성 평가 후 접속저항에서 모두 우수한 물성을 나타내었다. 반면, 플루오렌계 화합물과 비스페놀형 에폭시 수지의 공중합 화합물을 사용하지 않은 비교예 1은, 바인더 수지의 낮은 Tg로 인해 최저 용융 점도가 높고 130℃에서의 경화율이 낮았으며, 입자포착율이 낮고 신뢰성 평가 후 접속저항이 크게 증가하는 것으로 나타났다. 에폭시 당량이 150g/eq를 초과하는 에폭시 수지를 사용한 비교예 2는 유동 특성이 떨어져 최저 용융 점도가 가장 높게 나타났으며, 비교예 1과 마찬가지로 경화율과 입자포착율이 실시예들에 비해 저하되고 신뢰성 평가 후 접속저항이 크게 증가하였다.As shown in Table 1, the copolymer compound of the fluorene-based compound and the bisphenol-type epoxy resin; And the anisotropic conductive films of Examples 1 to 3 containing an epoxy resin having an epoxy equivalent of 150 g / eq or less showed excellent physical properties in connection resistance after the lowest melt viscosity, cure rate, particle capture rate, adhesive strength, initial stage and reliability evaluation. . On the other hand, Comparative Example 1, which does not use a copolymer of a fluorene-based compound and a bisphenol-type epoxy resin, has a high minimum melt viscosity and a low curing rate at 130 ° C. due to the low Tg of the binder resin, and a low particle capture rate. After the reliability evaluation, the connection resistance was found to increase significantly. Comparative Example 2 using an epoxy resin having an epoxy equivalent of more than 150 g / eq showed the lowest melt viscosity due to poor flow characteristics, and the curing rate and particle capture rate were lowered as in Comparative Example 1, compared to Examples. After the reliability evaluation, the connection resistance increased significantly.

Claims (19)

  1. 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물; 에폭시 당량이 150g/eq 이하인 에폭시 수지; 경화제; 및 도전 입자를 포함하는 이방 도전성 필름용 조성물.Copolymerized compounds of fluorene-based compounds and bisphenol-type epoxy compounds; Epoxy resins having an epoxy equivalent weight of 150 g / eq or less; Curing agent; And conductive particles comprising conductive particles.
  2. 제1항에 있어서, 상기 플루오렌계 화합물은 2개 이상의 히드록시기를 포함하는, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films according to claim 1, wherein the fluorene-based compound contains two or more hydroxyl groups.
  3. 제2항에 있어서, 상기 플루오렌계 화합물이 하기 화학식 1의 구조를 갖는, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films of Claim 2 in which the said fluorene type compound has a structure of following General formula (1).
    [화학식 1][Formula 1]
    Figure PCTKR2016004417-appb-I000008
    Figure PCTKR2016004417-appb-I000008
    상기 화학식 1에서, R은 각각 독립적으로 알킬기, 알콕시기, 아릴기 또는 사이클로 알킬기이고,In Formula 1, R is each independently an alkyl group, an alkoxy group, an aryl group or a cycloalkyl group,
    m은 각각 독립적으로 0 내지 4의 정수이고,m is each independently an integer of 0 to 4,
    n은 각각 독립적으로 1 내지 5의 정수이다.n is each independently an integer of 1-5.
  4. 제1항에 있어서, 상기 비스페놀형 에폭시 화합물이 비스페놀 A형 에폭시 화합물, 비스페놀 F형 에폭시 화합물, 비스페놀 AD형 에폭시 화합물, 비스페놀 E형 에폭시 화합물, 비스페놀 S형 에폭시 화합물 또는 이들의 조합인, 이방 도전성 필름용 조성물.The anisotropic conductive film according to claim 1, wherein the bisphenol type epoxy compound is a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, a bisphenol AD type epoxy compound, a bisphenol E type epoxy compound, a bisphenol S type epoxy compound, or a combination thereof. Composition.
  5. 제1항에 있어서, 상기 공중합 화합물이 하기 화학식 2 내지 4 중 어느 하나의 구조를 갖는, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films according to claim 1, wherein the copolymer compound has a structure of any one of the following Chemical Formulas 2 to 4.
    [화학식 2][Formula 2]
    Figure PCTKR2016004417-appb-I000009
    Figure PCTKR2016004417-appb-I000009
    [화학식 3][Formula 3]
    Figure PCTKR2016004417-appb-I000010
    Figure PCTKR2016004417-appb-I000010
    [화학식 4][Formula 4]
    Figure PCTKR2016004417-appb-I000011
    Figure PCTKR2016004417-appb-I000011
    상기 화학식 2 내지 4에서, In Chemical Formulas 2 to 4,
    R1, R2, R3 및 R4는 서로 동일하거나 상이하고 각각 독립적으로 수소 또는 C1-6의 알킬기, 할로겐 원자 또는 히드록시기이고,R 1 , R 2 , R 3 and R 4 are the same as or different from each other, and are each independently hydrogen or an alkyl, halogen atom or hydroxy group of C 1-6 ,
    R5 및 R6은 서로 동일하거나 상이하고 각각 독립적으로 수소, C1-6의 알킬기, 할로겐 원자, C6-20의 방향족 고리 또는 C6-20의 지환족 고리이며,R 5 and R 6 are the same or different and are each independently hydrogen, a alkyl group, a halogen atom, C 6-20 or C 6-20 aromatic ring of a C 1-6 alicyclic ring with each other,
    n은 1 내지 100의 정수이다.n is an integer from 1 to 100.
  6. 제1항에 있어서, 상기 공중합 화합물의 중량평균분자량이 5,000 내지 50,000인, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films according to claim 1, wherein the weight average molecular weight of the copolymer compound is 5,000 to 50,000.
  7. 제1항에 있어서, 상기 공중합 화합물의 유리전이온도(Tg)가 140℃ 내지 200℃인, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films of Claim 1 whose glass transition temperature (Tg) of the said copolymerization compound is 140 degreeC-200 degreeC.
  8. 제1항에 있어서, 상기 에폭시 당량이 150g/eq 이하인 에폭시 수지가 지환족 에폭시 수지, 비스페놀형 에폭시 수지 또는 방향족 에폭시 수지인, 이방 도전성 필름용 조성물.The composition for anisotropic conductive films according to claim 1, wherein the epoxy resin having an epoxy equivalent of 150 g / eq or less is an alicyclic epoxy resin, a bisphenol type epoxy resin, or an aromatic epoxy resin.
  9. 제1항에 있어서, 이방 도전성 필름용 조성물의 고형분 총 중량을 기준으로,According to claim 1, Based on the total weight of solids of the composition for anisotropic conductive film,
    공중합 화합물이 20 중량% 내지 70 중량%;20 to 70 weight percent of a copolymer compound;
    에폭시 당량이 150g/eq 이하인 에폭시 수지가 20 중량% 내지 50 중량%;20 wt% to 50 wt% of an epoxy resin having an epoxy equivalent weight of 150 g / eq or less;
    경화제가 0.5 중량% 내지 10 중량%; 및0.5 to 10 weight percent curing agent; And
    도전 입자가 1 중량% 내지 30 중량%로 포함되는, 이방 도전성 필름용 조성물.The composition for an anisotropic conductive film containing 1 weight%-30 weight% of conductive particles.
  10. 플루오렌계 화합물과 비스페놀형 에폭시 화합물의 공중합 화합물, 및 도전입자를 포함하는 이방 도전성 필름으로,An anisotropic conductive film containing a copolymer of a fluorene-based compound and a bisphenol-type epoxy compound, and conductive particles,
    상기 필름을 50℃ 내지 80℃, 1 내지 3초간 및 1.0MPa 내지 3.0MPa의 조건에서 가압착하고, 120℃ 내지 160℃, 3 내지 6초간 및 60MPa 내지 80MPa의 압력 조건 하에서 본압착 후 측정한 하기 식 1에 따른 입자포착율이 30% 이상이고, 접착력이 10 MPa 이상인, 이방 도전성 필름.The film was press-bonded under the conditions of 50 ° C. to 80 ° C., 1 to 3 seconds and 1.0 MPa to 3.0 MPa, and measured after main compression under pressure conditions of 120 ° C. to 160 ° C., 3 to 6 seconds and 60 MPa to 80 MPa. The anisotropically conductive film whose particle | grain capture rate in accordance with 1 is 30% or more, and adhesive force is 10 MPa or more.
    [식 1][Equation 1]
    입자포착율(%) = (가압착 및 본압착 후 접속 부위의 단위면적당(mm2) 도전 입자의 수 /가압착 전 이방 도전성 필름의 단위면적당(mm2) 도전 입자의 수) × 100Particle capture rate (%) = (number of conductive particles per unit area (mm 2 ) of the connection site after pressing and main compression / number of (mm 2 ) conductive particles per unit area of the anisotropic conductive film before pressing) × 100
  11. 제10항에 있어서, 상기 플루오렌계 화합물은 2개 이상의 히드록시기를 포함하는, 이방 도전성 필름.The anisotropic conductive film of claim 10, wherein the fluorene-based compound includes two or more hydroxyl groups.
  12. 제11항에 있어서, 상기 플루오렌계 화합물이 하기 화학식 1의 구조를 갖는, 이방 도전성 필름.The anisotropic conductive film of claim 11, wherein the fluorene-based compound has a structure represented by Formula 1 below.
    [화학식 1][Formula 1]
    Figure PCTKR2016004417-appb-I000012
    Figure PCTKR2016004417-appb-I000012
    상기 화학식 1에서, In Chemical Formula 1,
    R은 각각 독립적으로 알킬기, 알콕시기, 아릴기 또는 사이클로 알킬기이고,Each R is independently an alkyl group, an alkoxy group, an aryl group, or a cycloalkyl group,
    m은 각각 독립적으로 0 내지 4의 정수이고,m is each independently an integer of 0 to 4,
    n은 각각 독립적으로 1 내지 5의 정수이다.n is each independently an integer of 1-5.
  13. 제10항에 있어서, 상기 공중합 화합물이 하기 화학식 2 내지 4 중 어느 하나의 구조를 갖는, 이방 도전성 필름.The anisotropic conductive film of claim 10, wherein the copolymer compound has a structure of any one of Formulas 2 to 4 below.
    [화학식 2][Formula 2]
    Figure PCTKR2016004417-appb-I000013
    Figure PCTKR2016004417-appb-I000013
    [화학식 3][Formula 3]
    Figure PCTKR2016004417-appb-I000014
    Figure PCTKR2016004417-appb-I000014
    [화학식 4][Formula 4]
    Figure PCTKR2016004417-appb-I000015
    Figure PCTKR2016004417-appb-I000015
    상기 화학식 2 내지 4에서, In Chemical Formulas 2 to 4,
    R1, R2, R3 및 R4는 서로 동일하거나 상이하고 각각 독립적으로 수소 또는 C1-6의 알킬기, 할로겐 원자 또는 히드록시기이고,R 1 , R 2 , R 3 and R 4 are the same as or different from each other, and are each independently hydrogen or an alkyl, halogen atom or hydroxy group of C 1-6 ,
    R5 및 R6은 서로 동일하거나 상이하고 각각 독립적으로 수소, C1-6의 알킬기, 할로겐 원자, C6-20의 방향족 고리 또는 C6-20의 지환족 고리이며,R 5 and R 6 are the same or different and are each independently hydrogen, a alkyl group, a halogen atom, C 6-20 or C 6-20 aromatic ring of a C 1-6 alicyclic ring with each other,
    n은 1 내지 100의 정수이다.n is an integer from 1 to 100.
  14. 제10항에 있어서, 상기 이방 도전성 필름은 COG(chip on glass) 또는 COF(chip on film) 실장 방식에 사용되는, 이방 도전성 필름.The anisotropic conductive film of claim 10, wherein the anisotropic conductive film is used in a chip on glass (COG) or chip on film (COF) mounting method.
  15. 제10항에 있어서, ARES 측정에 따른 30℃ 내지 200℃에서의 최저 용융 점도가 5,000 내지 20,000 Pa·s 인, 이방 도전성 필름.The anisotropic conductive film of Claim 10 whose minimum melt viscosity in 30 degreeC-200 degreeC according to ARES measurement is 5,000-20,000 Pa.s.
  16. 제10항에 있어서, 상기 가압착 및 본압착 후 측정한 초기 접속 저항이 1.0 Ω 이하인, 이방 도전성 필름.The anisotropically conductive film of Claim 10 whose initial connection resistance measured after the said pressure bonding and main compression bonding is 1.0 ohm or less.
  17. 제10항에 있어서, 상기 가압착 및 본압착 후, 온도 85℃ 및 상대 습도 85%의 조건 하에서 500시간 동안 방치하여 측정한 신뢰성 평가 후 접속 저항이 3 Ω 이하인, 이방 도전성 필름.The anisotropic conductive film according to claim 10, wherein the connection resistance is 3 Ω or less after reliability evaluation measured by standing for 500 hours under conditions of a temperature of 85 ° C. and a relative humidity of 85% after the pressing and main pressing.
  18. 제10항에 있어서, 하기 식 2에 따른 경화율이 80% 이상인, 이방 도전성 필름.The anisotropic conductive film of Claim 10 whose hardening rate by following formula (2) is 80% or more.
    [식 2][Equation 2]
    경화율(%) = [(H0-H1)/H0]×100Curing Rate (%) = [(H 0 -H 1 ) / H 0 ] × 100
    상기 식 2에서, H0는 이방 도전성 필름을 열시차주사열량계(DSC)를 이용하여 질소 가스 분위기 하에서 10℃/min, -50℃ 내지 250℃ 온도 구간에서 곡선아래 면적으로 측정한 초기 발열량이고, H1은 핫플레이트(hot plate) 상에 130℃ 에서 5초간 방치한 후 동일한 방법으로 측정한 발열량을 나타낸다.In Equation 2, H 0 is the initial calorific value of the anisotropic conductive film measured by the area under the curve at a temperature range of 10 ° C./min, −50 ° C. to 250 ° C. under a nitrogen gas atmosphere using a differential thermal scanning calorimeter (DSC), H 1 represents the calorific value measured by the same method after standing at 130 ° C. for 5 seconds on a hot plate.
  19. 제1 전극을 함유하는 제1 피접속부재;A first to-be-connected member containing a first electrode;
    제2 전극을 함유하는 제2 피접속부재; 및A second to-be-connected member containing a second electrode; And
    상기 제1 피접속부재와 상기 제2 피접속부재 사이에 위치하여 상기 제1 전극 및 상기 제2 전극을 접속시키는, 제10항 내지 제18항의 이방 도전성 필름에 의해 접속된 디스플레이 장치.The display apparatus connected by the anisotropic conductive film of Claims 10-18 which is located between the said 1st to-be-connected member and the said 2nd to-be-connected member, and connects the said 1st electrode and the said 2nd electrode.
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