TW201703901A - 處理奈米粒子的方法 - Google Patents

處理奈米粒子的方法 Download PDF

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TW201703901A
TW201703901A TW105120848A TW105120848A TW201703901A TW 201703901 A TW201703901 A TW 201703901A TW 105120848 A TW105120848 A TW 105120848A TW 105120848 A TW105120848 A TW 105120848A TW 201703901 A TW201703901 A TW 201703901A
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sintering
substrate
nanoparticles
nanoparticle
photo
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TW105120848A
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約瑟Ｓ 雷尼
麥克Ａ 德格拉夫
慕巴夏爾Ａ 巴希爾
杰羅姆 克萊西丘
史帝芬Ｊ 普洛特
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陶氏全球科技責任有限公司
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Publication of TW201703901A publication Critical patent/TW201703901A/zh

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Abstract

由導電的奈米粒子製備的結構的材料特性藉由輻射燒結接著化學燒結增強。導電的奈米粒子可藉由諸如絲網印刷、噴墨、氣溶膠及電紡絲的方法塗覆至基板，且隨後燒結基板上的導電的奈米粒子。

Description

處理奈米粒子的方法
本發明涉及處理奈米粒子以增強用奈米粒子製備的結構的材料特性的方法。更具體而言，本發明涉及藉由輻射燒結接著化學燒結處理奈米粒子以增強用奈米粒子製備的結構的材料特性的方法。
奈米粒子具有在各種應用(諸如生物學、化學、材料科學、電子、成像及藥品)中有價值的特性。在電子工業中，奈米粒子通常用作催化劑，諸如在無電金屬電鍍中；其用於形成電磁干擾(EMI)屏蔽塗層、射頻干擾信號(RFI)屏蔽塗層以及用於形成用於透明傳導性材料(TCM)的金屬網。
在基板上的奈米粒子的燒結在用於印刷型電子產品、增材製造或3D打印的新型材料的開發中已變得越來越重要。在基板上的奈米粒子的沈積可使用一系列技術實現：噴墨及氣溶膠印刷、絲網印刷、電紡絲、擠出沈積及標準本體塗佈方法(諸如旋塗或棒塗)。顯著挑戰為達到有效的奈米粒子的燒結以獲得期望的材料特性，例如緻密化、強度、傳導性及光學特性。燒結金屬奈米粒子的已知技術為藉由熱、光子或化學曝露。然而，奈米粒子的低效燒結可導致由所述 奈米粒子製備的製品的受損及不可接受的材料特性。另外，過度的燒結(諸如重複的光子曝露)可損壞在其上沈積奈米粒子的基板。
當基板對熱敏感時，例如聚對苯二甲酸亞乙酯(PET)(T g約67℃至81℃)能夠實現在低溫下的有效燒結變成一種需要。舉例而言，金屬奈米粒子墨沈積的結構的燒結可需要超過200℃的溫度用於維持延長的時間週期，其與熱敏性基板不兼容。所以，存在對在熱敏性基板上燒結奈米粒子以增強由奈米粒子製備的製品的材料特性而不破壞基板的方法的需要。
方法包含將奈米粒子沈積在基板上；以及藉由輻射燒結接著化學燒結來處理在基板上的導電的奈米粒子以形成燒結的結構。
出乎意料地，與單獨使用許多常規輻射燒結及化學燒結方法相比，輻射燒結接著化學燒結導電的奈米粒子的組合改進燒結的結構的材料特性。奈米粒子的過度燒結產生具有不可接受的材料特性的燒結的結構。因此，藉由燒結由輻射燒結接著化學燒結奈米粒子製備的燒結的結構的材料特性預期未被改進但是一般而言為不可接受的。然而，輻射燒結接著化學燒結的組合至少增強燒結的結構的導電性，此通常伴隨著提高的透射率及降低的霧度。組合的燒結方法還實現使用熱敏性基板，而無需擔心組合的燒結方法可能造成基板損壞或燒結的結構與基板的分層。
輻射燒結接著化學燒結的方法可用於形成電磁 干擾(EMI)屏蔽塗層、射頻干擾信號(RFI)屏蔽塗層、導電線跡、形成用於透明傳導性材料(TCM)的金屬網、增材製造(3D印刷)以及用於其中導電奈米粒子有用的任何其他領域。
圖1為在光燒結接著氯化氫曝露後的薄層電阻[歐姆/平方]與在光燒結後的薄層電阻[歐姆/平方]的曲線。
圖2為在光燒結接著氯化氫曝露後的霧度[%]與在光燒結後的霧度[%]的曲線。
圖3為在光燒結接著氯化氫曝露後的透射率[%]與在光燒結後的透射率的曲線。
除非上下文另外明確指示，否則如在整個說明書中所使用，以下縮寫具有以下含義：℃=攝氏度；g=克；L=升；mL=毫升；μL=微升；rpm=轉/分鐘；msec=毫秒；D.I.=去離子水；Hz=赫茲；mPa s=兆帕秒；s=秒；Mw=重均分子量；Mn=數均分子量；m=米；mm=毫米；μm=微米(micron)=微米(micrometer)；cm=厘米；nm=奈米；Ω=歐姆；Ωm=歐姆米；sq=平方(square)；V=伏特；kV=千伏特；mJ=毫焦耳；μs=微秒；UV=紫外；IR=紅外；3D=三維；SEM=掃描電子顯微照片；M=莫耳；TGA=熱解重量分析；Tg=玻璃轉移溫度；wt%=重量%；vol%=體積%；VFR核=核材料的體積流率；以及VFR殼=殼材料的體積流率。
術語「輻射」意指以射線、波或粒子的形式輻射 或傳播的能量。術語「燒結」意指融合粒子使得粒子的晶粒邊界融合且形成塊團。術語「塊團」意指材料的聚集。術語「透射率百分比(%)」=I/I0×100，其中I0=進入樣品的光的強度，且I=離開樣品的光的強度。術語「霧度」意指由光散射引起的材料的渾濁度。化學式HCl=氯化氫或鹽酸。術語「膜」及「層」在整個本說明書中可互換使用。除非另外規定，否則所有百分比值均為重量%。所有數值範圍均包含在內且可按任何次序組合，但邏輯上此類數值範圍被限制於總計共100%。
方法包含將奈米粒子沈積在基板上；以及藉由輻射燒結接著化學燒結處理在基板上的奈米粒子。輻射燒結始終首先進行，其中化學燒結緊接著輻射燒結進行。在輻射燒結及化學燒結之間不存在中間步驟。輻射燒結包含光燒結及熱燒結。較佳使用光燒結，因為本發明的光燒結方法比熱燒結與低溫基板更相容。
用於光燒結的光源包含但不限於可具有UV至IR光譜輸出範圍的閃光燈諸如氙閃光電弧燈。光燒結可使用常規光子發生器設備(諸如來自Novacentrix或Xenon's SINTERON脈衝光系統的工具的Pulseforge族)進行。此類發生器能夠發出在UV至短IR的寬譜上的光。光燒結可使用穩定狀態或脈衝光遞送進行。可將穩定狀態光遞送光柵化或掃描，使得在特定位置中之停留時間變短。短停留時間為較佳的，因為本發明的方法較佳用於低溫基板，其中餘熱可導致損壞基板且引起塗覆至基板的沈積的奈米粒子結構的分層。停留時間可根據製成基板的材料及使用的光傳遞設備而 變化。可進行小型實驗以確定特定光傳送設備的停留時間。
光燒結方法包括用光子發生器照射導電的奈米粒子使得奈米粒子吸收能量。在光燒結中，在環境溫度下能量轉移至奈米粒子且局部產生熱。光燒結引起奈米粒子變得光化學激發且因此，其經由引起其燒結的熱損耗耗散能量。較佳地，光子發生器為可在短時間段內傳遞大量能量的閃光燈。較佳地，施加至奈米粒子的光能的範圍為1,000mJ/cm2至10,000mJ/cm2，更佳4,000mJ/cm2至8,000mJ/cm2。時間段範圍較佳為0.5μs至1毫秒，更佳1μs至5μs。燈的輸出強度可藉由燈電壓控制。脈衝傳遞的持續時間可經由燈閃光寬度控制。此等參數中之每個可在連接至燈組件的電源的總動力輸送規格內獨立地調節。
視情況，遮罩可在光燒結之前施加至具有奈米粒子的基板。遮罩選擇性覆蓋基板的部分且留下其他部分未被覆蓋，使得在光燒結期間，在施加光時，僅具有未被覆蓋的奈米粒子的基板的彼等部分燒結。
熱燒結與光燒結的不同之處在於，奈米粒子連同基板放入恆定高溫的環境中。熱燒結可在烘箱、紅外源、熱燈或將熱能轉移至奈米粒子及基板的其他熱傳遞系統中進行。熱燒結溫度的範圍較佳為30°至低於200℃，更佳50℃至150℃。本發明的熱燒結溫度低於常規熱燒結溫度以防止損壞低溫基板。導電的奈米粒子及基板熱燒結的曝露時間範圍較佳為30秒至30分鐘，更佳為60秒至10分鐘。
在奈米粒子及基板藉由兩種輻射燒結方法中之一種處理後，奈米粒子部分聚集。然後其藉由化學燒結處理， 而無需可影響奈米粒子或基板的材料特性的任何中間過程。
化學燒結藉由在室溫下將輻射燒結的奈米粒子及基板曝露於鹵化物化合物的蒸氣或溶液進行。此類化合物為氯化物、溴化物、氟化物及碘化物離子的來源。用於鹵化物化合物溶液的溶劑包含(但不限於)水、醇、酮及其混合物。醇包含(但不限於)甲醇、乙醇、異丙醇及第三丁醇。酮包含(但不限於)丙酮。較佳地，溶劑為水。鹵化物溶液的濃度範圍為10wt%至60wt%，較佳15wt%至50wt%，更佳20wt%至40wt%。鹵離子的來源包含(但不限於)氯化氫、氫溴酸、氟化氫、碘化氫以及鹵鹽，諸如鹼金屬鹽，諸如氯化鋰。當鹵化物來源為鹼金屬鹵化物時，用於溶液的溶劑為水及有機溶劑的混合物。有機溶劑包含(但不限於)二醇、二醇醚、二醇醚乙酸酯、酮、酯、醛、醇及烷氧基化醇。通常，二醇諸如乙二醇、二乙二醇、三乙二醇、聚乙二醇、丙二醇及二丙二醇；二醇醚諸如二乙二醇單甲醚、二乙二醇單丙醚、二乙二醇單丁醚及乙二醇單甲醚；且醇諸如乙醇、甲醇、異丙醇及第三丁醇。
具有部分聚集的導電的奈米粒子的基板可浸入鹵化物溶液中或曝露於所述溶液的蒸氣。可將溶液加熱以產生發煙鹵化物蒸氣。較佳地，將部分聚集的導電的奈米粒子曝露於鹵化物蒸氣，更佳地，將其曝露於發煙鹵化物蒸氣以完成燒結法。化學燒結通常進行1分鐘至24小時。當部分聚集的奈米粒子藉由鹵化物蒸氣，較佳地，藉由發煙鹵化物蒸氣化學燒結時，導電及光學特性的改進(諸如提高透射率及降低霧度)在1分鐘至5分鐘的時間段內快速出現。然而， 在用發煙鹵化物蒸氣燒結後，在貯存奈米粒子時，通常燒結的奈米粒子的導電性在24小時時間段繼續提高。
在化學燒結方法後，燒結的結構或膜已經完全聚集具有平滑外形的奈米粒子。不進行另外的燒結步驟。燒結的結構或膜可具有20Ω/平方及更低、通常7Ω/平方至10Ω/平方的低薄片電阻率，80%及更高、通常80%至90%的高透射率%，以及12%及更低、通常2%至5%的低霧度%。薄片電阻率可藉由常規方法及設備如Delcom 737電導監視器測量。透射率百分比及霧度百分比還可藉由常規方法及設備(諸如Hunterlab Ultrascan VIS儀器)測量。
導電的奈米粒子可藉由本領域中已知的各種常規方法製備。不存在對在奈米粒子的製備中設想的方法的限制。
奈米粒子包含導電材料，諸如金屬、金屬氧化物及非金屬諸如石墨、石墨烯及碳黑。較佳地，用於奈米粒子的導電材料為金屬。金屬包含(但不限於)銀、金、鉑、鈀、銦、銣、釕、銠、鋨、銥、鋁、銅、鈷、鎳及鐵。較佳地，金屬為銀、金、鈀及銅。更佳地，銀、金及銅為金屬的選擇。最佳地，銀為金屬的選擇，因為其為熱力學上更穩定(即抗腐蝕的)的金屬中之一種。
導電的奈米粒子可以用一種或多種封端劑穩定或封端，以防止奈米粒子的不希望的聚集。許多常規聚合物封端劑為本領域中已知的，且為可用的或可根據在文獻中描述的方法製備。較佳地，封端劑為聚甲基丙烯酸甲酯或甲基丙烯酸及甲基丙烯酸正丁酯的無規共聚物。最佳地，封端劑 為甲基丙烯酸及甲基丙烯酸正丁酯的無規共聚物，所述無規共聚物沿其主鏈具有親水性及疏水性部分，且Mw低於20,000g/mol，較佳1,000g/mol至10,000g/mol，更佳2,000g/mol至6,000g/mol。通常，在施用至基板之前，導電的奈米粒子分散於水、有機溶劑或水及有機溶劑的混合物中。
可包含在奈米粒子分散液中調整用於特定應用的分散液的視情況選用之添加劑包含(但不限於)緩衝劑、潤滑劑、保濕劑、蠟、樹脂、界面活性劑、著色劑、流變改性劑、增稠劑及黏著促進劑。添加劑可以由本領域普通技術人員已知常規量包含於分散液中。較佳地，奈米粒子分散液不包含此類添加劑。
用於本發明的基板可選自各種已知的基板。較佳地，基板為熱敏性基板。此類熱敏性基板的Tg範圍為60℃至170℃，較佳60℃至100℃。較佳地，基板為選自各種已知透明基板的透明基板，其包含：透明導電基板及透明不導電基板兩種。較佳地，透明基板選自由以下各者組成之群：聚對苯二甲酸亞乙酯(PET)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)；聚萘二甲酸乙二酯(PEN)、聚醚碸(PES)、環烯烴聚合物(COP)、三乙醯纖維素(TAC)、聚乙烯醇(PVA)、聚醯亞胺(PI)、聚苯乙烯(PS)(例如，雙軸拉伸的聚苯乙烯)以及玻璃(例如，可購自道康寧(Dow Corning)的Gorilla®玻璃及Willow®玻璃)。更佳地，透明基板選自由以下各者組成之群：玻璃、聚對苯二甲酸亞乙酯、聚碳酸酯及聚甲基丙烯酸甲酯。最佳地，透明基板為聚對苯二甲酸亞乙酯。
噴墨印刷可為連續噴墨方法或按需滴墨方法。連 續方法為其中墨的方向藉由改變電磁場調節同時使用泵不斷噴射墨的印刷方法。按需滴墨為根據電子信號僅在需要時分配墨的方法。按需滴墨可分成其中藉由使用藉由電引起機械改變的壓電板生成壓力的壓電噴墨方法及使用藉由由熱產生的空心球的膨脹生成壓力的熱噴墨法。用於墨噴射墨奈米粒子分散液的常規參數為本領域中眾所周知的，且可用於本發明的墨奈米粒子分散液的噴墨；然而，對於具體分散液墨噴射參數的特定設置可變化，且可涉及小型實驗以達到對於特定奈米粒子分散液的期望墨噴射效能。
與噴墨印刷方法相比，氣溶膠方法首先形成墨的氣溶膠。將氣溶膠經由加壓噴嘴引導至基板，其中將加壓噴嘴安裝至印刷頭。將氣溶膠與聚焦氣體混合，且以聚焦的形成輸送至加壓的噴嘴。使用聚焦氣體分配墨減少堵塞噴嘴的機率，且還能夠比用噴墨設備形成更細的沈積及更大高寬比。常規氣溶膠參數可用於應用奈米粒子分散液；然而，可涉及小型實驗以達到期望的效能。
電紡絲(諸如同軸電紡絲)可用於將奈米粒子分散液沈積在基板上。一般而言，同軸電紡絲包含將墨核組分(其包含分散於水、有機溶劑或其混合物中之奈米粒子)以及由在水、有機溶劑或兩者的混合物中之聚合物溶液的混合物組成的殼通過具有中心開口及周圍環狀開口的共環噴嘴進料，其中墨核組分通過中心開口進料，且殼通過周圍環狀開口進料。較佳地，通過周圍環狀開口進料的殼材料的體積流率(VFR 殼 )與通過中心開口進料的核材料的體積流率(VFR 核 )的比率大於或等於垂直於流方向的周圍環狀開口的橫截面積(CSA 環狀 )與垂直於流方向 的中心開口的橫截面積(CSA 中心 )的比率。更佳地，以下表達式符合處理條件：VFR殼/VFR核 1.2*(CSA環狀/CSA中心)。如同噴墨及氣溶膠應用，同軸電紡絲參數可為常規的，且可涉及小型實驗以達到期望的效能。此類方法的實例公開於U.S.2014/0131078中。
包含以下實例以進一步說明本發明但並不旨在限制其範圍。
實例1 奈米粒子的合成
如下製備銀奈米粒子及墨。首先，將23.6g具有親水性片段及疏水性片段的其中在水/丙二醇混合物(10：90 wt/wt)中47莫耳%部分來自甲基丙烯酸且53莫耳%部分來自甲基丙烯酸正丁酯的封端溶液20wt%甲基丙烯酸/甲基丙烯酸正丁酯無規共聚物放入反應燒瓶中，且將315g二乙醇胺、114g丙二醇及附加20g D.I.水添加至所述燒瓶。如藉由相對於聚苯乙烯校準的凝膠滲透層析法(GPC)測定，無規共聚物的重均分子量為4000g/mol。將混合物以500rpm的速率攪拌1小時以獲得澄清溶液。溶液的pH大約為8。然後在室溫下在劇烈攪拌(1000rpm的攪拌速率)下將剛製備的硝酸銀溶液(67mL的在D.I.水中之50wt%溶液)快速添加至反應混合物。在添加硝酸銀溶液時，形成淡褐色的沈澱，其立刻重新溶解。然後在15分鐘內將反應混合物的溫度升高至75℃，且允許反應3小時。在反應結束時，混合物的顏色已變成茶褐色，此指示高濃度的銀奈米粒子。
允許反應混合物冷卻，且添加500mL丙酮以促 進固體材料從溶液沈澱。傾析上清液，且將在燒瓶底部中之糊狀物重新分散於800mL水/1-丙氧基-2-丙醇(75/25 wt/wt)中，且在10000rpm下離心1小時。在環境條件中乾燥由離心產生的固體團塊以獲得約50g奈米粒子材料。如藉由TGA(在空氣下加熱高達600℃)測定，此材料的純度高於98wt%銀。粒子的粒度藉由使用多個圖像的SEM圖像分析測量。發現平均尺寸為56nm。
實例2 奈米粒子分散液的製備
將45g乾燥奈米粒子(純度>98wt%銀)放入球磨罐(35mL)中，且添加18g分散溶劑(水/1-丙氧基-2-丙醇/第三丁醇，35/15/50，以混合物重量計)。在15Hz下將混合物球磨3小時。如藉由來自賽默飛世爾(ThermoFisher)的RS600流變儀測量，此處理產生約25mL黏度為約30mPa s的70wt%銀奈米粒子墨。流變儀具有直徑為25mm且間隙高度為1mm的平行夾具。測量在20℃下進行。
實例3 在透明基板上奈米粒子分散液的同軸電紡絲
配備有單個同軸噴嘴的電紡絲機器(來自IME科技(IME Technologies)的型號EC-DIG)用於電紡絲實例2的銀奈米粒子分散液作為在65：35 wt/wt的異丙醇與水的混合物中之5.25wt%聚氧化乙烯核組分及殼組分(Mn=400kg/mol)。使用的噴嘴為同軸噴嘴(來自IME科技(IME Technologies)的EM-CAX)，其有具有垂直於直徑為0.4mm的材料流方向的圓形截面的內開口；以及具有垂直於材料流 方向且與內開口同心的環狀截面的外開口；且具有0.6mm內徑及1.2mm外徑。當紡絲材料時，將核組分通過同軸噴嘴的內開口進料，且將殼組分通過同軸噴嘴的外開口進料。使用控制核組分的體積流率(VFR核)及殼組分的體積流率(VFR殼)的獨立的注射器泵(來自IME科技的EP-NE1)，將核及殼組分通過同軸噴嘴進料，使得VFR殼/VFR核的流動速率比率為10：1。電紡絲方法在氣候受控制的實驗室中在20℃及25%至35%的相對濕度下在環境大氣壓條件下進行。
基板為可購自惠普(Hewlett-Packard)的188μm厚×12.7cm寬×30.5cm長透明的、柔性HP 52聚對苯二甲酸亞乙酯(PET)膜。基板圍繞來自IME科技的模組EM-RDC旋轉鼓輪收集器的轉鼓纏繞。
用於紡絲操作的剩餘參數如下：在旋轉基板及針之間的距離設置為11cm；噴嘴設置為5kV；在基板下方的板設置為-0.2kV；在旋轉鼓輪收集器上的轉鼓旋轉速率(y軸)設置為500rpm至1000rpm；針掃描速度(x軸)設置為5mm/秒；針掃描距離設置為12cm；且總紡絲時間設置為4分鐘。銀奈米粒子金屬網在PET基板上形成。在基板上的奈米粒子線網的直徑為約5μm±1μm。
實例4 光燒結銀奈米粒子塗覆的PET膜的管線
從在其上銀奈米粒子的管線經由根據實例3的同軸電紡絲沈積的的基板上切割5cm×2.5cm的樣品膜。然後在傳送帶上以7m/分鐘的速率將樣品通過來自Novacentrix的Pulseforge 3100光子發生器進料。光子發生器設置為200V 以產生在3Hz頻率下的2000μs脈衝以連續模式產生6076mJ/cm2的光能。離開光子發生器的樣品為金屬網透明導體。
用Delcom 737電導監測器測量銀網樣品的薄層電阻，且在Hunterlab Ultrascan VIS儀器上測量透射率%及霧度%。結果顯示於下表中。
實例5 光燒結及化學燒結銀奈米粒子塗覆的PET膜的管線
然後在通風櫥下藉由將其曝露於來自含37%氯化氫水溶液的燒杯的氯化氫蒸氣一分鐘來化學燒結所述來自實例4的銀網樣品。在24小時後測量薄層電阻、透射率%及霧度%。結果在表2中。
將用於光燒結及光燒結接著用氯化氫蒸氣化學燒結的每個參數的值標繪在圖1至圖3中。
如上表中及在圖1中所示，藉由光燒結接著用氯化氫化學燒結處理的樣品與僅光燒結相比具有降低的薄層電阻。除其中對於光燒結及光燒結接著化學燒結的霧度%相同的 樣品2之外，當樣品藉由兩種燒結方法處理時，霧度%為降低的。藉由使用兩種燒結方法，透射率%示出一些增加。最顯著的結果為觀察到在樣品經光燒結且隨後化學燒結兩者後薄層電阻的下降，由此增加樣品的導電性。
實例6 化學燒結銀奈米粒子塗覆的PET膜的管線
銀奈米粒子及銀奈米粒子分散液如上文所描述製備。藉由如以上實例3中之所描述的同軸電紡絲將銀奈米粒子分散液施加至PET膜。如下表中所示處理銀管線樣品。
HCl蒸氣及HCl浸漬實驗產生具有與在表1及表2中所描述的彼等可比的薄層電阻的樣品；然而，必須指出僅化學處理的樣品包括較大量的沈積的奈米粒子，諸如由其降低的透射率表示。此結果為期望材料的最終薄層電阻在燒結時具有較低理論最小值。
實例5(表2)的燒結方法，其中在表3中除霧度%=11.3的表2的實例1之外所有化學處理樣品，首先藉由光燒結接著化學燒結來燒結的樣品示出改進霧度%。在化學燒結1小時後測量的，在實例5中表2的樣品1及樣品5中對於藉由光燒結接著用HCl蒸氣化學燒結處理的樣品的薄層電 阻比僅化學處理樣品的薄層電阻低的多，由此此兩種樣品具有比僅化學燒結的彼等樣品更高的導電性。在實例5中之表2的樣品2至樣品4具有比藉由在LiCl溶液(無論溶液為2wt%異丙醇或2wt%水)中浸漬來化學燒結的奈米粒子更低的薄層電阻，由此具有比僅用LiCl溶液化學燒結的奈米粒子更高的導電性。

Claims (9)

  1. 一種方法，其包括：a)在基板上沈積導電的奈米粒子；以及b)藉由輻射燒結接著化學燒結來處理在所述基板上的所述導電的奈米粒子以形成燒結的結構。
  2. 如申請專利範圍第1項所述的方法，其中所述輻射燒結選自光燒結及熱燒結。
  3. 如申請專利範圍第2項所述的方法，其中所述輻射燒結為光燒結。
  4. 如申請專利範圍第1項所述的方法，其中所述化學燒結藉由鹵化物蒸氣或藉由鹵化物溶液進行。
  5. 如申請專利範圍第1項所述的方法，其中所述奈米粒子藉由電紡絲、噴墨、氣溶膠、凹版印刷或絲網印刷沈積在所述基板上。
  6. 如申請專利範圍第1項所述的方法，其中所述基板選自聚對苯二甲酸亞乙酯、聚碳酸酯、聚甲基丙烯酸甲酯、聚萘二甲酸乙二酯、聚醚碸、環烯烴聚合物、三乙醯纖維素、聚乙烯醇、聚醯亞胺、聚苯乙烯及玻璃。
  7. 如申請專利範圍第6項所述的方法，其中所述基板的Tg的範圍為60℃至170℃。
  8. 如申請專利範圍第1項所述的方法，其中所述奈米粒子包括金屬、金屬氧化物、導電的非金屬或其混合物。
  9. 如申請專利範圍第8項所述的方法，其中所述金屬選自銀、金、鉑、鈀、銦、銣、釕、銠、鋨、銥、鋁、銅、鈷、鎳及鐵。
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