TW201702004A - Grinding tool and manufacturing method thereof, and manufacturing method of ground article look for reducing manufacture time, decreasing manufacture cost and enhancing geometry precision so as to increase yield of finished products - Google Patents
Grinding tool and manufacturing method thereof, and manufacturing method of ground article look for reducing manufacture time, decreasing manufacture cost and enhancing geometry precision so as to increase yield of finished products Download PDFInfo
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- TW201702004A TW201702004A TW105118020A TW105118020A TW201702004A TW 201702004 A TW201702004 A TW 201702004A TW 105118020 A TW105118020 A TW 105118020A TW 105118020 A TW105118020 A TW 105118020A TW 201702004 A TW201702004 A TW 201702004A
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- mass
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- abrasive
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- 238000000227 grinding Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 230000002708 enhancing effect Effects 0.000 title description 3
- 230000003247 decreasing effect Effects 0.000 title 1
- 238000005498 polishing Methods 0.000 claims abstract description 122
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- 239000002245 particle Substances 0.000 claims abstract description 67
- 239000010432 diamond Substances 0.000 claims abstract description 64
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 47
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 39
- 239000000956 alloy Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 150000004678 hydrides Chemical class 0.000 claims abstract description 22
- 239000011159 matrix material Substances 0.000 claims description 45
- 239000006061 abrasive grain Substances 0.000 claims description 42
- 239000000843 powder Substances 0.000 claims description 40
- 229910017755 Cu-Sn Inorganic materials 0.000 claims description 29
- 229910017927 Cu—Sn Inorganic materials 0.000 claims description 29
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 29
- 239000011812 mixed powder Substances 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 15
- 229910052987 metal hydride Inorganic materials 0.000 claims description 14
- 150000004681 metal hydrides Chemical class 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 238000010304 firing Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 abstract description 36
- 241000662429 Fenerbahce Species 0.000 abstract 1
- 229910020888 Sn-Cu Inorganic materials 0.000 abstract 1
- 229910019204 Sn—Cu Inorganic materials 0.000 abstract 1
- 229910052500 inorganic mineral Inorganic materials 0.000 abstract 1
- 239000011707 mineral Substances 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002002 slurry Substances 0.000 description 10
- 238000000465 moulding Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 4
- 239000010436 fluorite Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 239000010421 standard material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 titanium hydride Chemical compound 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000048 titanium hydride Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052586 apatite Inorganic materials 0.000 description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910021532 Calcite Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009707 resistance sintering Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本發明係關於硬脆材料之拋光加工用研磨工具。 The present invention relates to an abrasive tool for polishing a hard and brittle material.
為了獲得半導體材料、光裝置材料等各種材料,過去已進行對藍寶石、碳化矽、石英等硬脆材料之拋光加工。 In order to obtain various materials such as semiconductor materials and optical device materials, polishing processes for hard and brittle materials such as sapphire, tantalum carbide, and quartz have been performed in the past.
此處所指之拋光加工例如為將被稱為拋光壓盤之圓形壓盤與板狀之被研磨材料進行面摩擦以調整板狀體之厚度或平行度、平坦度、表面粗糙度等之加工,通常藉由使用包含金剛石或立方晶氮化硼等之固定研磨石之拋光盤進行。其後,藉由使用膠體二氧化矽等之CMP等研磨晶圓表面,將晶圓表面加工為平坦且無變形或傷痕之鏡面狀態(鏡面研磨步驟)。 The polishing process referred to herein is, for example, a surface in which a circular platen called a polishing platen is rubbed with a plate-shaped material to adjust the thickness or parallelism, flatness, surface roughness, and the like of the plate-like body. It is usually carried out by using a polishing disk comprising fixed abrasive stones such as diamond or cubic boron nitride. Thereafter, the surface of the wafer is polished by CMP or the like using colloidal ceria or the like to process the surface of the wafer into a flat state without distortion or scratch (mirror polishing step).
上述先前之拋光加工所得之被研磨物之表面粗糙度較大,故於其後之CMP步驟需要花費例如數天之較長時間。 The surface roughness of the object to be polished obtained by the above previous polishing process is large, so that the subsequent CMP step takes a long time such as several days.
為了謀求該CMP步驟之時間短縮,例如,於先前之拋光加工與CMP步驟之間,進行作為用以提高表面平滑性之拋光之最終步驟之併用包含金剛石漿料之游離研磨粒、與使用銅-錫合金之研磨盤進行研磨。將上述先前之拋光步驟稱為L1步驟,相對於此,亦將此種金剛石漿料之拋光步驟稱為L2步驟。 In order to shorten the time of the CMP step, for example, between the previous polishing process and the CMP step, the final step of polishing for improving the surface smoothness is performed, and the free abrasive grains containing the diamond slurry are used, and copper is used. The grinding disc of the tin alloy is ground. The above-mentioned previous polishing step is referred to as the L1 step, whereas the polishing step of such a diamond slurry is also referred to as the L2 step.
然而,於上述L2步驟中,有如下問題:金剛石漿料昂貴而耗費製造成本、由於為利用游離研磨粒研磨之形式故不易維持幾何精度且所得之板狀體之研磨物的周邊部容易產生所謂塌邊、於縮短製造時間 之方面亦不夠充分等問題。因此,若可使用金剛石之固定研磨粒進行上述L2步驟,則不僅可降低製造成本或進一步縮短時間,亦期待有助於提高幾何精度亦即提高成品率。 However, in the above-mentioned L2 step, there is a problem that the diamond slurry is expensive and costly to manufacture, and it is difficult to maintain geometric precision in the form of polishing with free abrasive grains, and the peripheral portion of the obtained abrasive body of the plate-like body is likely to be so-called Collapse, shortening manufacturing time The aspects are not sufficient enough. Therefore, if the above-mentioned L2 step can be carried out using the fixed abrasive grains of diamond, the manufacturing cost can be reduced or the time can be further shortened, and it is expected to contribute to an improvement in geometric accuracy, that is, an improvement in yield.
於專利文獻1~3,記載有一種以硬脆材料之細微研削或研磨為目的,而使用金剛石等固定研磨粒之研磨工具。 Patent Literatures 1 to 3 disclose an abrasive tool for fixing abrasive grains using diamond or the like for the purpose of fine grinding or polishing of hard and brittle materials.
又,於專利文獻4雖非記載研磨工具者,但記載使包含金剛石研磨粒、焊料、及氫化鈦之混合粒附著於糊狀物質,其後將其燒結之固定研磨粒式鋼絲鋸。 Further, in Patent Document 4, the polishing tool is not described, but a fixed abrasive grain jigsaw in which a mixed particle containing diamond abrasive grains, solder, and titanium hydride is adhered to a paste-like substance and then sintered is described.
[專利文獻1]日本專利特開平8-174428號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 8-174428
[專利文獻2]日本專利特開2012-178617號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-178617
[專利文獻3]日本專利特開2014-083611號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2014-083611
[專利文獻4]日本專利特開2010-131698號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2010-131698
然而,為了將金剛石之固定研磨粒用於硬脆材料之拋光之最終步驟,為了充分獲得縮短加工時間之效果,需要使研磨粒保持力、尤其是促進自磨銳性與研磨粒保持力並存,然而如專利文獻1~3之先前之固定研磨粒型之研磨工具於該等觀點而言尚有改善餘地,且硬脆材料之研磨能力不夠充分。 However, in order to use the fixed abrasive grains of diamond for the final step of polishing the hard and brittle material, in order to sufficiently obtain the effect of shortening the processing time, it is necessary to make the abrasive grain retaining force, especially the self-sharpening property and the abrasive grain retaining force coexist. However, as in the prior art fixed abrasive type grinding tools of Patent Documents 1 to 3, there is still room for improvement from such viewpoints, and the grinding ability of the hard and brittle materials is insufficient.
又,專利文獻4雖記載包含可形成氫化物之金屬之鋼絲鋸,但於研磨工具中使用可形成氫化物之金屬、及藉此可提高使用金剛石固定研磨粒之研磨工具的加工能力迄今尚未知。 Further, Patent Document 4 describes a wire saw including a metal capable of forming a hydride, but it has not been known to use a metal capable of forming a hydride in a polishing tool and thereby improve the processing ability of a polishing tool using diamond-fixed abrasive grains. .
因此,本發明之課題在於提供一種可消除上述先前技術所具有之各種缺點之研磨工具。 Accordingly, it is an object of the present invention to provide an abrasive tool that eliminates the various disadvantages of the prior art described above.
本發明係提供一種研磨工具者,其係修正莫氏硬度8以上之硬脆材料之拋光加工用研磨工具,且係將金剛石粒子分散於金屬基質而成,且於上述金屬基質中包含可形成氫化物之金屬。 The present invention provides a polishing tool for polishing a polishing tool for hard and brittle materials having a Mohs hardness of 8 or more, and dispersing diamond particles in a metal matrix, and comprising hydrogenating in the metal matrix Metal of matter.
又,本發明係提供一種研磨工具之製造方法,其係上述研磨工具之製造方法,且包含:將金剛石粒子、構成金屬基質或為其原料之金屬粉末、及金屬氫化物加以混合之步驟;將由該步驟獲得之混合粉加壓成形之步驟;及將加壓成形之成形物在非氧化性氛圍下燒成之步驟。 Moreover, the present invention provides a method of manufacturing an abrasive tool, which is a method for producing the above-described polishing tool, and includes a step of mixing diamond particles, a metal powder constituting the metal substrate or a raw material thereof, and a metal hydride; The step of press-forming the mixed powder obtained in this step; and the step of firing the press-formed molded article in a non-oxidizing atmosphere.
又,本發明係提供一種研磨工具之製造方法,其係上述研磨工具之製造方法,且包含:將金剛石粒子、構成金屬基質或其為原料之金屬粉末、金屬氫化物加以混合之步驟;及一面將由該步驟獲得之混合粉加壓一面在非氧化性氛圍下燒成之步驟。 Moreover, the present invention provides a method of manufacturing an abrasive tool, which is a method for producing the above-described polishing tool, and includes: a step of mixing diamond particles, a metal matrix constituting the metal substrate or a raw material thereof, and a metal hydride; The step of calcining the mixed powder obtained in this step while pressing in a non-oxidizing atmosphere.
又,本發明係提供一種研磨物之製造方法,其係包含對修正莫氏硬度8以上之硬脆材料即被研磨物之表面供給包含游離研磨粒之研磨液且使技術方案1中記載之研磨工具滑動接觸並研磨之步驟的研磨物之製造方法,其使用修正莫氏硬度12以上且為金剛石以外之研磨粒作為游離研磨粒,使用該游離研磨粒之濃度為2質量%以上40質量%以下者作為研磨液。 Moreover, the present invention provides a method for producing an abrasive comprising supplying a polishing liquid containing free abrasive grains to a surface of a workpiece to be polished, which is a hard and brittle material having a Mohs hardness of 8 or more, and polishing according to the first aspect. A method for producing a polishing material in which the tool is slidably contacted and polished, using a modified Mohs hardness of 12 or more and other abrasive grains other than diamond as the free abrasive grains, and the concentration of the free abrasive grains is 2% by mass or more and 40% by mass or less. As a polishing liquid.
根據本發明,可提供一種由於尤其研磨粒保持力高,故硬脆材料之加工能力高,可於短時間獲得表面平滑之研磨物,之較佳適於硬脆材料之拋光加工用之研磨工具。 According to the present invention, it is possible to provide a grinding tool which is preferably suitable for polishing of hard and brittle materials because of high holding power of the abrasive grains, high processing ability of the hard and brittle material, and smoothing of the surface smoothing material in a short time. .
於將本發明之研磨工具用於拋光之最終步驟時,可謀求縮短製造時間、降低製造成本、提高研磨物之幾何精度從而提高成品率等。 When the polishing tool of the present invention is used in the final step of polishing, it is possible to shorten the manufacturing time, reduce the manufacturing cost, improve the geometric accuracy of the polishing product, and improve the yield.
又,根據本發明之製造方法,可有效率地製造上述研磨工具。 Further, according to the manufacturing method of the present invention, the above-described polishing tool can be efficiently produced.
又,根據本發明之研磨物之製造方法,使用上述研磨工具,可於短時間獲得表面平滑之硬脆材料之研磨物。 Further, according to the method for producing an abrasive according to the present invention, the polishing tool for obtaining a hard and brittle material having a smooth surface can be obtained in a short time by using the above-mentioned polishing tool.
1‧‧‧兩面加工機 1‧‧‧Two-sided processing machine
2‧‧‧下壓盤 2‧‧‧Unloading plate
3‧‧‧上壓盤 3‧‧‧Upper platen
4‧‧‧壓盤支持部 4‧‧‧ Platen Support Department
5‧‧‧基底 5‧‧‧Base
7‧‧‧太陽齒輪 7‧‧‧Sun gear
8‧‧‧內齒齒輪 8‧‧‧ internal gear
9‧‧‧承載體 9‧‧‧Carrier
10‧‧‧板狀之被研磨物 10‧‧‧ Plate-like objects
11‧‧‧氣缸 11‧‧‧Cylinder
11a‧‧‧輸出桿 11a‧‧‧ Output rod
12‧‧‧托架 12‧‧‧ bracket
13‧‧‧轉動件 13‧‧‧Rotating parts
20‧‧‧研磨工具 20‧‧‧ grinding tools
A‧‧‧箭頭 A‧‧‧ arrow
B‧‧‧中央箭頭 B‧‧‧Central Arrow
C‧‧‧箭頭 C‧‧‧ arrow
D‧‧‧箭頭 D‧‧‧ arrow
X-X‧‧‧線 X-X‧‧‧ line
圖1係顯示使用本發明之研磨工具之拋光步驟中所使用之兩面加工機之一例的概略前視圖。 Fig. 1 is a schematic front view showing an example of a double-face processing machine used in the polishing step using the polishing tool of the present invention.
圖2係圖1之X-X線箭頭剖視圖。 Figure 2 is a cross-sectional view taken along line X-X of Figure 1.
圖3係使用於圖1之兩面加工機之本發明之研磨工具形狀的一例。 Fig. 3 is an example of the shape of the abrasive tool of the present invention used in the two-face processing machine of Fig. 1.
圖4係實施例1之研磨工具之剖面SEM照片。 Figure 4 is a cross-sectional SEM photograph of the abrasive tool of Example 1.
圖5係比較例1之研磨工具之剖面SEM照片。 Fig. 5 is a cross-sectional SEM photograph of the abrasive tool of Comparative Example 1.
以下,基於其較佳之實施形態說明本發明。 Hereinafter, the present invention will be described based on preferred embodiments thereof.
成為本發明研磨工具之研磨對象之材料為修正莫氏硬度8以上之硬脆材料。於本發明中,硬脆材料指玻璃、石英、陶瓷、各種半導體結晶材料等非常硬而脆,且不耐衝擊易碎之材料。 The material to be polished of the polishing tool of the present invention is a hard and brittle material having a modified Mohs hardness of 8 or more. In the present invention, the hard and brittle material refers to a material which is very hard and brittle, such as glass, quartz, ceramic, various semiconductor crystalline materials, and which is not resistant to impact and fragile.
修正莫氏硬度為將相對於標準物質造成損傷者為基礎之硬度數值化者。自柔軟者依序指定1至15之標準物質,作為具體之標準物質,修正莫氏硬度1為滑石、2為石膏、3為方解石、4為螢石、5為磷灰石、6為正長石、7為熔融石英、8為石英、9為黃色水晶、10為石榴石、11為熔融氧化鋯、12為熔融氧化鋁、13為碳化矽、14為碳化硼、及15為金剛石。例如,於以標準物質4之螢石刮擦試料未對試料造成損傷,以標準物質5之磷灰石刮擦對試料造成損傷之情形時表示該試料比4硬,比5軟,作為修正莫氏硬度表記為「4.5」。又,於以標準物質4之螢石刮擦對試料與螢石均造成損傷之情形時,試料為與標準物質4相同硬度,作為修正莫氏硬度表記為「4」。修正莫氏硬度之數值畢竟為相對者,並非絕對值。硬脆材料之修正莫氏硬度可使用莫氏硬 度計藉由常用方法測定。 The Mohs hardness is corrected to be the hardness of the hardness based on the damage caused by the standard substance. The softness is specified in the order of 1 to 15 standard materials. As a specific standard substance, the Mohs hardness is 1 for talc, 2 for gypsum, 3 for calcite, 4 for fluorite, 5 for apatite, and 6 for feldspar. 7 is fused silica, 8 is quartz, 9 is yellow crystal, 10 is garnet, 11 is molten zirconia, 12 is fused alumina, 13 is lanthanum carbide, 14 is boron carbide, and 15 is diamond. For example, when the sample is scraped with the fluorite of the standard material 4, the sample is not damaged, and the sample is damaged by the apatite scrap of the standard substance 5, indicating that the sample is harder than 4 and softer than 5, as a modification. The hardness is marked as "4.5". In addition, when the sample and the fluorite were damaged by scratching with the fluorite of the standard material 4, the sample had the same hardness as the standard material 4, and the modified Mohs hardness was recorded as "4". The value of the modified Mohs hardness is, after all, the relative, not the absolute value. Corrected Mohs hardness of hard and brittle materials can be used in Mohs hard The meter is measured by a usual method.
作為修正莫氏硬度8以上之硬脆材料之具體例,可列舉藍寶石(修正莫氏硬度12)、石英(修正莫氏硬度8)、SiC(修正莫氏硬度13)、氧化鋁(修正莫氏硬度12)等。 Specific examples of the hard and brittle material having a Mohs hardness of 8 or more include sapphire (corrected Mohs hardness 12), quartz (modified Mohs hardness 8), SiC (modified Mohs hardness 13), and alumina (corrected Mohs) Hardness 12) and so on.
自有效發揮本發明效果之觀點而言,硬脆材料之修正莫氏硬度較佳為13以下。 From the viewpoint of effectively exerting the effects of the present invention, the modified Mohs hardness of the hard and brittle material is preferably 13 or less.
本發明之研磨工具係將金剛石粒子分散至金屬基質中,且於上述金屬基質中包含可形成氫化物之金屬。 The abrasive tool of the present invention disperses diamond particles into a metal matrix and contains a metal capable of forming a hydride in the above metal matrix.
首先對研磨粒即金剛石粒子進行說明。 First, the abrasive particles, that is, the diamond particles, will be described.
金剛石粒子之形狀並未限定。於本發明中,作為金剛石粒子之粒徑,平均粒徑為1μm以上者,自提高研磨工具之加工能力之觀點而言係較佳。又,作為金剛石粒子之粒徑,平均粒徑為20μm以下者,自提高被研磨物之表面粗糙度之觀點而言係較佳。自該等觀點而言,作為金剛石粒子之粒徑,更佳為平均粒徑2μm以上16μm以下,進而更佳為平均粒徑4μm以上12μm以下。 The shape of the diamond particles is not limited. In the present invention, as the particle diameter of the diamond particles, the average particle diameter is 1 μm or more, which is preferable from the viewpoint of improving the processing ability of the polishing tool. Moreover, as the particle diameter of the diamond particles, the average particle diameter is 20 μm or less, and it is preferable from the viewpoint of improving the surface roughness of the object to be polished. From these viewpoints, the particle diameter of the diamond particles is more preferably an average particle diameter of 2 μm or more and 16 μm or less, and still more preferably an average particle diameter of 4 μm or more and 12 μm or less.
金剛石粒子之平均粒徑可藉由以下求得:例如對研磨工具進行樹脂填埋後以金剛石刀切斷,並使用掃描型電子顯微鏡放大(例如倍率1000倍)觀察切斷面,對200個粒子進行弗雷特(Feret)直徑之測定,並算出其平均值。 The average particle diameter of the diamond particles can be obtained by, for example, resin-filling the grinding tool, cutting it with a diamond knife, and observing the cut surface using a scanning electron microscope (for example, a magnification of 1000 times) for 200 particles. The measurement of the Freit diameter was performed and the average value was calculated.
研磨工具於金剛石粒子之含量未達0.1質量%之情形時,有藉由本發明之研磨工具難以獲得縮短加工時間之效果之情形,又,研磨工具中金剛石粒子之含量超過10質量%亦有難以獲得縮短加工時間效果之情形。自該觀點而言,研磨工具中金剛石粒子之含量較佳為0.1質量%以上10質量%以下,更佳為1質量%以上5質量%以下。研磨工具中金剛石粒子之含量係例如以酸溶解研磨工具中之金屬基質,並測定殘留之金剛石量即可。 When the content of the diamond particles is less than 0.1% by mass, the grinding tool of the present invention is difficult to obtain the effect of shortening the processing time, and the content of the diamond particles in the grinding tool exceeding 10% by mass is also difficult to obtain. Shorten the processing time effect. From this viewpoint, the content of the diamond particles in the polishing tool is preferably 0.1% by mass or more and 10% by mass or less, more preferably 1% by mass or more and 5% by mass or less. The content of the diamond particles in the grinding tool is such that the metal matrix in the grinding tool is dissolved in an acid, and the amount of residual diamond is determined.
於本發明中,作為黏合研磨粒即金剛石粒子之黏合材基質,使用金屬基質。金屬可構成較脆黏合,可促進自磨銳性(self-sharpening)。作為構成成為研磨工具之黏合材之金屬基質的金屬,列舉Cu-Sn系合金、Cu-P系合金、Ni-Sn系合金、Cu系合金、Ni系合金、Co系合金、Fe系合金。該等可僅使用1種,亦可混合2種以上使用。於該等中,自提高本發明效果之觀點而言,較佳為Cu-Sn系合金。此處所謂之Cu-Sn合金為Cu與Sn之合金,且除了Cu與Sn以外亦可進而含有其他1種或2種以上之副元素。作為Cu-Sn系合金之Cu及Sn以外之副元素,例如可列舉鎳、磷、鈷、鈦、鉻、釩等。該等副元素可包含1種或2種以上。又,於Cu-Sn系合金中,可包含無法避免之雜質。 In the present invention, a metal matrix is used as a binder matrix for bonding abrasive grains, that is, diamond particles. Metals can form a brittle bond that promotes self-sharpening. Examples of the metal constituting the metal matrix of the binder of the polishing tool include a Cu-Sn-based alloy, a Cu-P-based alloy, a Ni-Sn-based alloy, a Cu-based alloy, a Ni-based alloy, a Co-based alloy, and a Fe-based alloy. These may be used alone or in combination of two or more. Among these, a Cu-Sn-based alloy is preferred from the viewpoint of enhancing the effects of the present invention. Here, the Cu-Sn alloy is an alloy of Cu and Sn, and may contain one or more other sub-elements in addition to Cu and Sn. Examples of the secondary element other than Cu and Sn in the Cu-Sn-based alloy include nickel, phosphorus, cobalt, titanium, chromium, vanadium, and the like. These auxiliary elements may contain one type or two or more types. Further, in the Cu-Sn-based alloy, unavoidable impurities may be contained.
作為Cu-Sn系合金,較佳為Sn含量超過20質量%者。其理由在於:Sn含量超過20質量%之Cu-Sn系合金其硬且脆之較佳之特性高。金屬基質之脆性較高時由於良好地促進金剛石粒子之自磨銳性故而較佳。又,金屬基質之硬性較高時由於加工硬脆材料時,可使金剛石粒子對於硬脆材料之咬入良好故而較佳。因此,於作為金屬基質使用包含Sn含量超過20質量%之Cu-Sn系合金之基質之情形時,可使本發明之研磨工具能更穩定且有效地加工硬脆材料。又,作為Cu-Sn系合金,Sn含量為60質量%以下者自抑制研磨工具過脆之觀點而言較佳。自該等觀點而言,Cu-Sn系合金中之Sn含量更佳為30質量%以上58質量%以下,特佳為45質量%以上55質量%以下。 As the Cu-Sn-based alloy, those having a Sn content of more than 20% by mass are preferable. The reason for this is that a Cu-Sn-based alloy having a Sn content of more than 20% by mass is preferable in that it is hard and brittle. When the brittleness of the metal matrix is high, it is preferred because it promotes the sharpness of the diamond particles. Further, when the hardness of the metal substrate is high, it is preferable to process the hard and brittle material to make the diamond particles bite into the hard and brittle material. Therefore, when a substrate containing a Cu-Sn-based alloy having a Sn content of more than 20% by mass is used as the metal substrate, the abrasive tool of the present invention can process the hard and brittle material more stably and efficiently. Further, as the Cu-Sn-based alloy, the Sn content of 60% by mass or less is preferable from the viewpoint of suppressing the excessive brittleness of the polishing tool. From these viewpoints, the Sn content in the Cu—Sn-based alloy is more preferably 30% by mass or more and 58% by mass or less, and particularly preferably 45% by mass or more and 55% by mass or less.
Cu-Sn系合金之Cu含量較佳為40質量%以上未達80質量%,更佳為45質量%以上55質量%以下,特佳為48質量%以上52質量%以下。Cu-Sn系合金中之Sn含量及Cu含量例如可藉由ICP發光分析裝置測定。 The Cu content of the Cu-Sn-based alloy is preferably 40% by mass or more and less than 80% by mass, more preferably 45% by mass or more and 55% by mass or less, and particularly preferably 48% by mass or more and 52% by mass or less. The Sn content and the Cu content in the Cu-Sn-based alloy can be measured, for example, by an ICP emission spectrometer.
本發明之研磨工具中,構成金屬基質之金屬含量為70質量%以 上,自保持金剛石粒子之觀點而言較佳。又,本發明之研磨工具中,構成金屬基質之金屬含量為98質量%以下,自確保一定量之金剛石或可形成氫化物之金屬的觀點而言較佳。自該等觀點而言,研磨工具中,構成金屬基質之金屬含量更佳為75質量%以上96質量%以下,特佳為80質量%以上92質量%以下。另,此處所謂之構成金屬基質之金屬含量於金屬基質包含上述各種合金時為該合金之含量,又,於該合金包含上述副元素時,為包含該副元素之量。然而,此處所謂之構成金屬基質之金屬含量,設為不包含構成金屬氫化物之金屬之含量者。構成研磨工具中之金屬基質之金屬含量係藉由以硝酸等酸溶解研磨工具,並以ICP發光分析裝置等定量溶解物中之Sn、Cu等金屬之濃度的方法等測定即可。 In the grinding tool of the present invention, the metal content constituting the metal substrate is 70% by mass. Above, it is preferable from the viewpoint of maintaining the diamond particles. Further, in the polishing tool of the present invention, the metal content of the metal matrix is 98% by mass or less, and it is preferable from the viewpoint of securing a certain amount of diamond or a metal capable of forming a hydride. From these viewpoints, the metal content of the metal matrix in the polishing tool is more preferably from 75% by mass to 96% by mass, particularly preferably from 80% by mass to 92% by mass. Further, the content of the metal constituting the metal matrix herein is the content of the alloy when the metal matrix contains the above various alloys, and the amount of the sub-element when the alloy contains the above-mentioned sub-element. However, the metal content constituting the metal matrix herein is not included in the content of the metal constituting the metal hydride. The metal content of the metal substrate constituting the polishing tool may be measured by a method of dissolving the polishing tool with an acid such as nitric acid, and quantifying the concentration of a metal such as Sn or Cu in the dissolved solution by an ICP emission spectrometer or the like.
本發明之研磨工具含有鎳時自提高研磨工具成形性之觀點而言較佳。鎳可分散於本發明研磨工具之金屬基質中、或與構成基質之金屬形成合金。自提高成形性之觀點及不損及本發明效果之觀點而言,研磨工具中鎳之含量較佳為1質量%以上10質量%以下,更佳為2質量%以上6質量%以下。研磨工具中之鎳含量係藉由以硝酸等酸溶解研磨工具,並以ICP發光分析裝置等定量溶解物中之Ni濃度的方法等測定即可。 When the polishing tool of the present invention contains nickel, it is preferable from the viewpoint of improving the formability of the polishing tool. Nickel may be dispersed in the metal matrix of the abrasive tool of the present invention or alloyed with the metal constituting the matrix. The content of nickel in the polishing tool is preferably from 1% by mass to 10% by mass, and more preferably from 2% by mass to 6% by mass, from the viewpoint of improving the moldability and the effect of the present invention. The nickel content in the polishing tool may be measured by a method of dissolving the polishing tool with an acid such as nitric acid, and quantifying the concentration of Ni in the dissolved solution by an ICP emission spectrometer or the like.
本發明之研磨工具為含有可形成氫化物之金屬者。作為可形成氫化物之金屬,較佳為在大氣中容易處理者,除了列舉可形成氫化鈦(TiH2)之金屬即鈦(Ti)以外,還列舉鋰(Li)、鈉(Na),但較佳為鈦。此種金屬在以往之金剛石研磨粒固定型研磨工具中未被使用。本發明之發明人等對作為使用於金剛石固定研磨粒型之研磨工具之黏合材基質,積極研究可實現自磨銳性、且研磨粒之保持力良好之黏合材基質後,發現在金屬基質中含有可形成氫化物之金屬之黏合材基質具有此種特性。本發明中所使用之可形成氫化物之金屬為通常可藉由研磨工 具製造時燒成所伴隨之金屬氫化物之分解反應而獲得者。本發明之效果於金屬基質包含Sn含量超過20質量%未達60質量%之Cu-Sn系合金時特別高。為了使本發明之研磨工具中含有可形成氫化物之金屬,於如後述之本發明之研磨工具之製造方法般,使製造研磨工具時所使用之構成金屬基質或成為其原料之金屬粉末中含有金屬氫化物即可。可形成氫化物之金屬可大致均一地分散至金屬基質中,亦可偏向存在於金屬基質中之一部分,例如金剛石粒子周邊。於本發明之研磨工具中,可形成氫化物之金屬之存在形態並未限定,例如可為金屬,亦可為碳化物。碳化物之形態認為係因與金剛石反應所致。 The abrasive tool of the present invention is one that contains a metal that can form a hydride. As a metal capable of forming a hydride, it is preferable to treat it easily in the atmosphere, and in addition to titanium (Ti) which is a metal which can form titanium hydride (TiH 2 ), lithium (Li) and sodium (Na) are mentioned. Titanium is preferred. Such metals have not been used in conventional diamond abrasive fixed abrasive tools. The inventors of the present invention have actively studied a binder matrix which is self-sharpening and has good retention of abrasive grains as a binder matrix for a diamond-fixed abrasive-type abrasive tool, and found in a metal matrix. A binder matrix containing a metal capable of forming a hydride has such characteristics. The metal capable of forming a hydride used in the present invention is obtained by a decomposition reaction of a metal hydride which is usually accompanied by firing by a polishing tool. The effect of the present invention is particularly high when the metal matrix contains a Cu-Sn-based alloy having a Sn content of more than 20% by mass and less than 60% by mass. In order to make the abrasive tool of the present invention contain a metal capable of forming a hydride, as in the method for producing a polishing tool of the present invention to be described later, the metal matrix or the metal powder used as a raw material used in the production of the polishing tool is contained. Metal hydride can be used. The metal forming the hydride may be substantially uniformly dispersed into the metal matrix, or may be biased toward a portion of the metal matrix, such as the periphery of the diamond particles. In the polishing tool of the present invention, the form of the metal capable of forming a hydride is not limited, and may be, for example, a metal or a carbide. The morphology of the carbide is believed to be due to the reaction with diamond.
本發明之研磨工具中,可形成氫化物之金屬含有1質量%以上時自提高研磨粒之保持力之觀點而言較佳。又,研磨工具中可形成氫化物之金屬含量為10質量%以下時自工具之壓製成形性之觀點而言較佳。自該等觀點而言,研磨工具中可形成氫化物之金屬含量更佳為1質量%以上10質量%以下,特佳為3質量%以上8質量%以下。研磨工具中可形成氫化物之金屬之含量係藉由以適當之酸溶解研磨工具,並以ICP發光分析裝置等定量溶解物中之Ti、Li、Na等之濃度的方法等測定即可。此處提及之可形成氫化物之金屬量為金屬換算之量。 In the polishing tool of the present invention, when the metal forming the hydride is contained in an amount of 1% by mass or more, it is preferable from the viewpoint of enhancing the holding power of the abrasive grains. Further, when the metal content of the hydride to be formed in the polishing tool is 10% by mass or less, it is preferable from the viewpoint of press formability of the tool. From these viewpoints, the metal content of the hydride to be formed in the polishing tool is more preferably 1% by mass or more and 10% by mass or less, and particularly preferably 3% by mass or more and 8% by mass or less. The content of the metal in which the hydride can be formed in the polishing tool can be measured by dissolving the polishing tool with an appropriate acid, and measuring the concentration of Ti, Li, Na, or the like in the dissolved solution by an ICP emission spectrometer or the like. The amount of metal which can be formed into a hydride as mentioned herein is an amount in terms of metal.
本發明之研磨工具在不損及本發明效果之限度中,可含有金剛石、構成金屬基質之金屬及可形成氫化物之金屬以外的任意成分。作為此種其他任意成分,例如列舉碳、滑石、hBN等,該等其他任意成分之合計量例如較佳於研磨工具中為10質量%以下,更佳為5質量%以下。 The polishing tool of the present invention may contain any component other than diamond, a metal constituting the metal matrix, and a metal capable of forming a hydride, to the extent that the effects of the present invention are not impaired. The other optional component is, for example, carbon, talc, hBN or the like, and the total amount of the other optional components is preferably 10% by mass or less, and more preferably 5% by mass or less, in the polishing tool.
尤其自提高研削比之觀點而言本發明之研磨工具中金剛石以外之碳量較少較佳,較佳為研磨工具中10質量%以下,更佳為5質量%以下。碳量越少越佳,最佳為不含有碳。研磨工具中金剛石以外之碳量例如可使用紅外線吸收法測定。 In particular, the amount of carbon other than diamond in the polishing tool of the present invention is less preferred from the viewpoint of improving the grinding ratio, and is preferably 10% by mass or less, more preferably 5% by mass or less in the polishing tool. The smaller the amount of carbon, the better, and it is best not to contain carbon. The amount of carbon other than diamond in the grinding tool can be measured, for example, by an infrared absorption method.
本發明之研磨工具之形狀無特別限定,採用與先前之使用於拋光盤之研磨工具相同之形狀。作為使用於拋光盤(旋轉壓盤)之研磨工具之形狀,例如隨拋光盤之類型而異,例如於拋光盤為於磨合面固定多數小型顆粒物之顆粒物植設類型之情形時,列舉晶片狀、弓形狀、立方體狀、圓柱狀等。又,例如於拋光盤為以研磨體構成面磨合面本身之總型類型之情形時,列舉圓環狀或圓盤狀等。本發明之研磨工具可使用於任意類型之拋光盤,研磨工具之形狀亦可為上述任意者。 The shape of the abrasive tool of the present invention is not particularly limited, and the same shape as the previous abrasive tool used for the polishing disk is employed. The shape of the grinding tool used for the polishing disk (rotary platen) varies, for example, depending on the type of the polishing disk. For example, when the polishing disk is a type of particulate matter in which a large number of small particles are fixed on the running-in surface, the wafer shape, Bow shape, cube shape, column shape, etc. Further, for example, when the polishing disk is of a general type in which the surface grinding surface itself is formed by the polishing body, an annular shape, a disk shape, or the like is exemplified. The abrasive tool of the present invention can be used in any type of polishing disk, and the shape of the polishing tool can be any of the above.
接著,對本發明之研磨工具之較佳製造方法進行說明。 Next, a preferred method of manufacturing the polishing tool of the present invention will be described.
本發明之製造方法可為以下之(1)及(2)之任一者。 The production method of the present invention may be any one of the following (1) and (2).
(1)一種研磨工具之製造方法,其包含:將金剛石粒子、構成金屬基質或其原料之金屬粉末、及金屬氫化物混合之步驟(以下亦稱為A步驟);及將由該步驟獲得之混合粉成形加壓成形,接著將加壓成形之成形物在非氧化性氛圍下燒成之步驟(以下亦稱為B1步驟)。 (1) A method of producing an abrasive tool comprising: a step of mixing diamond particles, a metal powder constituting a metal substrate or a raw material thereof, and a metal hydride (hereinafter also referred to as step A); and mixing which is obtained by the step Powder molding press molding, followed by a step of firing the press-formed molded article in a non-oxidizing atmosphere (hereinafter also referred to as a B1 step).
(2)一種研磨工具之製造方法,其包含:上述A步驟、及一面加壓由A成形物步驟獲得之混合粉一面在非氧化性氛圍下燒成之步驟(以下亦稱為B2步驟)。 (2) A method for producing a polishing tool comprising the step A described above and a step of pressing a mixed powder obtained by the step of forming an A product in a non-oxidizing atmosphere (hereinafter also referred to as a step B2).
首先,對A步驟進行說明。作為A步驟中所用之金剛石之較佳粒徑,列舉上述粒徑。作為混合粉中金剛石粒子之較佳調配量,列舉與上述列舉之研磨工具中較佳之金剛石粒子含量相同之量,具體而言,較佳為混合粉中0.1質量%以上10質量%以下,更佳為1質量%以上5質量%以下。 First, the A step will be described. As the preferable particle diameter of the diamond used in the step A, the above particle diameter is listed. The preferred blending amount of the diamond particles in the mixed powder is the same as the content of the diamond particles preferably selected from the above-mentioned polishing tools. Specifically, it is preferably 0.1% by mass or more and 10% by mass or less, more preferably in the mixed powder. It is 1% by mass or more and 5% by mass or less.
作為A步驟中所用之構成金屬基質或其原料之金屬粉末中、構成金屬基質之金屬之例,可列舉與上述作為構成金屬基質之金屬之例而列舉者相同者。作為構成金屬基質之金屬之原料的金屬粉末,可列舉構成金屬基質之金屬例如為Cu-Sn系合金時之Cu粉、Sn粉或其他副材料之粉末。於本發明之製造方法中,較佳為構成金屬基質或其原料之 金屬粉末含有構成金屬基質之金屬。作為A步驟中所使用之混合粉中之構成金屬基質或其原料之金屬粉末的較佳調配量,列舉與研磨工具中之構成金屬基質之金屬之較佳調配量相同之量,具體而言,較佳為混合粉中70質量%以上98質量%以下,更佳為80質量%92質量%以下。 Examples of the metal constituting the metal matrix among the metal powders constituting the metal matrix or the raw material thereof used in the step A are the same as those exemplified as the metal constituting the metal matrix. The metal powder which is a raw material of the metal constituting the metal matrix may, for example, be a powder of Cu powder, Sn powder or other auxiliary material when the metal of the metal matrix is, for example, a Cu-Sn-based alloy. In the production method of the present invention, it is preferred to constitute a metal matrix or a raw material thereof. The metal powder contains a metal constituting a metal matrix. The preferred blending amount of the metal powder constituting the metal matrix or the raw material thereof in the mixed powder used in the step A is the same as the preferred blending amount of the metal constituting the metal matrix in the grinding tool, specifically, The mixed powder is preferably 70% by mass or more and 98% by mass or less, more preferably 80% by mass or 92% by mass or less.
於將研磨工具之金屬基質設為包含Cu-Sn系合金者之情形時,在本發明之製造方法中,混合粉中之構成金屬基質或其原料之金屬粉末之合計量中之Sn含量之較佳範圍,與作為Cu-Sn系合金中之較佳之Sn含量而於上述所列舉之範圍相同,較佳為超過20質量%未達60質量%,更佳為45質量%以上55質量%以下,特佳為48質量%以上52質量%以下。 In the case where the metal substrate of the grinding tool is set to include a Cu-Sn-based alloy, in the manufacturing method of the present invention, the Sn content in the total amount of the metal powder constituting the metal matrix or the raw material thereof in the mixed powder is compared. The preferred range is the same as the above-mentioned range as the preferable Sn content in the Cu-Sn-based alloy, and is preferably more than 20% by mass and less than 60% by mass, more preferably 45% by mass or more and 55% by mass or less. It is particularly preferably 48% by mass or more and 52% by mass or less.
例如,於將本發明之研磨工具中之金屬基質設為包含含有Sn超過20質量%未達60質量%之Cu-Sn系合金之情形時,作為A步驟中所用之構成金屬基質或為其原料之金屬粉末,使用Sn量超過20質量%未達60質量%之Cu-Sn系合金粉、或使用將Sn粉與Cu粉以Sn量超過20質量%未達60質量%之方式混合之混合物、或使用將Cu-Sn系合金粉與Sn粉及/或Cu粉以Sn量超過20質量%未達60質量%之方式混合之混合物即可。作為將本發明之研磨工具中之金屬基質設為包含含有Sn超過20質量%未達60質量%之Cu-Sn系合金者之情形之A步驟中所用之構成金屬基質或為其原料的金屬粉末之較佳之調配,相對於Cu-Sn系合金粉(尤其是Sn量超過20質量%未達60質量%之Cu-Sn系合金粉)100質量部,將Sn粉及Cu粉之合計設為20質量部以上98質量部以下,自成形性等觀點而言較佳,更佳設為25質量部以上92質量部以下。 For example, when the metal substrate in the grinding tool of the present invention is made to contain a Cu-Sn-based alloy containing more than 20% by mass of Sn and less than 60% by mass, as a constituent metal substrate used in the step A or as a raw material thereof The metal powder is a mixture of a Cu-Sn-based alloy powder having a Sn content of more than 20% by mass and less than 60% by mass, or a mixture of Sn powder and Cu powder in an amount of more than 20% by mass of Sn, which is less than 60% by mass. Alternatively, a mixture of the Cu-Sn-based alloy powder and the Sn powder and/or the Cu powder may be mixed so that the amount of Sn exceeds 20% by mass and is less than 60% by mass. The metal matrix constituting the metal substrate or the raw material thereof used in the step A of the case where the metal substrate in the abrasive tool of the present invention contains a Cu-Sn-based alloy containing more than 20% by mass of Sn and less than 60% by mass. In a preferred blending ratio, the total amount of Sn powder and Cu powder is set to 20 parts per 100 parts by mass of the Cu-Sn-based alloy powder (particularly, Cu-Sn-based alloy powder having a Sn content of more than 20% by mass and less than 60% by mass). The mass portion is not more than 98 parts by mass, and is preferably from the viewpoint of moldability and the like, and more preferably from 25 parts by mass to 92 parts by mass.
又,基於上述理由於研磨工具含有Ni之情形時,於本發明之製造方法中,較佳使混合粉中Ni粉含有1質量%以上10質量%以下,更佳為含有2質量%以上6質量%以下。 In the case where the polishing tool contains Ni, the Ni powder in the mixed powder preferably contains 1% by mass or more and 10% by mass or less, more preferably 2% by mass or more and 6% by mass. %the following.
作為A步驟之金屬氫化物,可列舉上述氫化鈦(TiH2)或氫化鋰(LiH)等。藉由將此種金屬氫化物與構成金屬基質或其原料之金屬粉末混合並燒成,可容易地獲得維持基於金屬基質之脆性之自磨銳性能力並提高研磨粒保持力的本發明之研磨工具。自更提高本發明之研磨工具之研磨粒保持力之觀點而言,較佳為A步驟之混合粉中金屬氫化物之量為1質量%以上。另一方面,將金屬氫化物之量抑制在一定以下時自工具之壓製成形性之觀點而言較佳,因此,A步驟之混合粉中金屬氫化物之量較佳為10質量%以下。自該等觀點而言,A步驟之混合粉中金屬氫化物之量更佳為1質量%以上10質量%以下,特佳為3質量%以上8質量%以下。 Examples of the metal hydride in the step A include the above-described titanium hydride (TiH 2 ) or lithium hydride (LiH). By mixing and firing such a metal hydride with a metal powder constituting a metal substrate or a raw material thereof, the grinding of the present invention which maintains the self-sharpening ability based on the brittleness of the metal substrate and improves the holding power of the abrasive grains can be easily obtained. tool. From the viewpoint of further improving the abrasive grain holding power of the polishing tool of the present invention, the amount of the metal hydride in the mixed powder of the step A is preferably 1% by mass or more. On the other hand, when the amount of the metal hydride is suppressed to a certain level or less, it is preferable from the viewpoint of press formability of the tool. Therefore, the amount of the metal hydride in the mixed powder of the step A is preferably 10% by mass or less. From these viewpoints, the amount of the metal hydride in the mixed powder of the step A is more preferably 1% by mass or more and 10% by mass or less, particularly preferably 3% by mass or more and 8% by mass or less.
又,作為B1步驟之加壓成形之成形法,列舉模具壓製成形法、膠模壓機法(靜水壓成形法)或電阻燒結法。作為加壓成形時之加壓壓力,較佳為4000kgf/cm2以上5000kgf/cm2以下,更佳為4200kgf/cm2以上4800kgf/cm2以下。 Moreover, the molding method of press molding in the step B1 includes a die press molding method, a die press method (hydrostatic molding method), or a resistance sintering method. As a pressure when the pressure molding is preferably 4000kgf / cm 2 or more 5000kgf / cm 2 or less, more preferably 4200kgf / cm 2 or more 4800kgf / cm 2 or less.
於B1步驟中,其後將加壓成形之成形物在非氧化性氛圍下燒成。藉由於非氧化性氛圍燒成,可防止金剛石或金屬基質之構成金屬氧化。作為非氧化性氛圍,除了如氮稀釋氫氣體、氨分解氣體之還原性氛圍以外,列舉氬氣、氮氣等非活性氛圍。作為燒成之保持溫度自合金化之觀點而言較佳為640℃以上,又,自燒結後工具形狀之觀點而言較佳為690℃以下,自該等觀點而言燒成之保持溫度更佳為640℃以上690℃以下,特別較佳為645℃以上660℃以下。又,該保持溫度之保持時間較佳為0.5小時以上8小時以下,更佳為2小時以上7小時以下。 In the step B1, the press-formed molded product is thereafter fired in a non-oxidizing atmosphere. Oxidation of the constituent metal of the diamond or metal matrix can be prevented by firing in a non-oxidizing atmosphere. As the non-oxidizing atmosphere, an inert atmosphere such as argon gas or nitrogen gas is used in addition to a reducing atmosphere in which a hydrogen gas or an ammonia decomposition gas is diluted with nitrogen. The holding temperature of the firing is preferably 640 ° C or more from the viewpoint of alloying, and is preferably 690 ° C or less from the viewpoint of the shape of the tool after sintering, and from these viewpoints, the holding temperature of the firing is further increased. Preferably, it is 640 ° C or more and 690 ° C or less, and particularly preferably 645 ° C or more and 660 ° C or less. Moreover, the holding time of the holding temperature is preferably 0.5 hours or more and 8 hours or less, more preferably 2 hours or more and 7 hours or less.
上述(1)之方法係研磨工具之生產能力高,由於容易量產故較佳,但如上述(2)之方法般,可代替將藉由A步驟獲得之混合粉加壓成形後燒成,而是一面加壓一面在非氧化性氛圍下燒成(B2步驟),藉此 製造本發明之研磨工具。B2步驟之燒成可藉由熱壓法等進行。 The method of the above (1) is high in the productivity of the polishing tool, and is preferable because it is easy to mass-produce. However, as in the method of the above (2), the mixed powder obtained by the step A can be formed by press molding and then fired. Rather, it is fired in a non-oxidizing atmosphere while being pressurized (step B2). The abrasive tool of the present invention is manufactured. The firing in the step B2 can be carried out by a hot press method or the like.
接著,對利用本發明之研磨工具之較佳研磨物之製造方法之一實施形態,參照圖1至圖3進行說明。本發明之製造方法為包含使修正莫氏硬度為8以上之硬脆材料即被研磨物之表面滑動接觸於本發明之研磨工具進行研磨之步驟的研磨物之製造方法。 Next, an embodiment of a method for producing a preferred abrasive using the polishing tool of the present invention will be described with reference to Figs. 1 to 3 . The manufacturing method of the present invention is a method for producing a polishing material comprising a step of sliding a surface of the object to be polished, which is a hard and brittle material having a modified Mohs hardness of 8 or more, in contact with the polishing tool of the present invention.
於圖1,顯示使用本發明之研磨工具之拋光步驟中使用之加工機之一例。圖1所示之兩面加工機1係包含下壓盤2、配設於該下壓盤2上方之上壓盤3、及接觸於該上壓盤3並支持該上壓盤3之壓盤支持部4而構成。 In Fig. 1, an example of a processing machine used in the polishing step using the abrasive tool of the present invention is shown. The double-sided processing machine 1 shown in FIG. 1 includes a lower pressing plate 2, a pressure plate 3 disposed above the lower pressing plate 2, and a platen support that contacts the upper platen 3 and supports the upper platen 3. The fourth part is configured.
於圖1所示,上壓盤3經由托架12可旋轉地安裝於氣缸11之輸出桿11a之前端部。該上壓盤3可藉由該氣缸11升降,且於下降時扣合於在基底5側中於圖2所示之箭頭D方向轉換之轉動件13之溝並於相同方向旋轉而成。又,於上述上壓盤3之下表面,配設本發明之研磨工具20。於該等之圖所示之例中,壓盤3為顆粒物植設類型即研磨工具20例如將如圖3所示之圓柱狀小型顆粒物如圖2所示般以特定間隔多數固定於上壓盤3之下表面。然而,如上所述研磨工具之形狀及對壓盤之設置態樣不限定於此。該上壓盤3藉由螺栓(未圖示)緊結固定於上述壓盤支持部4,且與該壓盤支持部4一同自由旋轉地設置。 As shown in FIG. 1, the upper platen 3 is rotatably attached to the front end of the output rod 11a of the cylinder 11 via the bracket 12. The upper platen 3 can be raised and lowered by the cylinder 11 and, when lowered, is fastened to the groove of the rotating member 13 which is converted in the direction of the arrow D shown in FIG. 2 in the side of the base 5, and is rotated in the same direction. Further, on the lower surface of the upper platen 3, the grinding tool 20 of the present invention is disposed. In the example shown in the drawings, the platen 3 is of a type of particulate matter, that is, the grinding tool 20, for example, a cylindrical small particle as shown in FIG. 3 is fixed to the upper platen at a specific interval as shown in FIG. 3 under the surface. However, the shape of the grinding tool and the arrangement of the pressure plate as described above are not limited thereto. The upper platen 3 is fastened to the platen support portion 4 by bolts (not shown), and is rotatably provided together with the platen support portion 4.
如圖2所示,下壓盤2在上述基底5上於箭頭A方向自由旋轉地設置,於其上表面,以與上述上壓盤3相同之態樣,配設本發明之研磨工具20。又,於該下壓盤2,配設4架與於中央箭頭B方向旋轉之太陽齒輪7、於外周側之箭頭C方向旋轉之內齒齒輪8嚙合,且一面公轉一面自轉之行星齒輪狀之承載體9。且,於設置於各承載體9之8個孔內分別設置板狀體即包含硬脆材料之被研磨物10。 As shown in Fig. 2, the lower platen 2 is rotatably provided on the base 5 in the direction of the arrow A, and the grinding tool 20 of the present invention is disposed on the upper surface thereof in the same manner as the upper platen 3. Further, in the lower platen 2, four sun gears 7 that rotate in the direction of the center arrow B are arranged, and the internal gears 8 that rotate in the direction of the arrow C on the outer peripheral side are meshed, and the planetary gears that rotate on one side of the revolution are rotated. Carrier 9. Further, a plate-shaped body, that is, a workpiece 10 containing a hard and brittle material is provided in each of the eight holes provided in each of the carriers 9.
於上述上壓盤3與上述下壓盤2之間,可藉由設置於上壓盤之孔、或漿料供給管(均未圖示)以特定量供給含有冷卻液或游離研磨粒 之研磨液。且,藉由上述氣缸11使上述上壓盤3下降,藉此與上述承載體9一體動作之上述被研磨物10被夾於上述下壓盤2與上述上壓盤3而拋光研磨。 Between the upper platen 3 and the lower platen 2, a coolant or free abrasive grain can be supplied in a specific amount by a hole provided in the upper platen or a slurry supply pipe (none of which is shown). The slurry. Then, the upper platen 3 is lowered by the air cylinder 11, and the workpiece 10 that is integrally operated with the carrier 9 is bonded to the lower platen 2 and the upper platen 3 to be polished.
本實施形態之拋光步驟條件一般如下所示。即,加工壓力較佳為0.05kgf/cm2以上0.3kgf/cm2以下,更佳為0.15kgf/cm2以上0.25kgf/cm2。上述兩面加工機之下壓盤旋轉數依存於加工機尺寸,但若為例如使用HAMAI公司製造之9B機之兩面加工機之情形,較佳為10rpm以上30rpm以下,更佳為15rpm以上25rpm以下。 The polishing step conditions of this embodiment are generally as follows. That is, the processing pressure is preferably 0.05kgf / cm 2 or more 0.3kgf / cm 2 or less, more preferably 0.15kgf / cm 2 or more 0.25kgf / cm 2. The number of rotations of the platen under the double-face processing machine depends on the size of the processing machine. However, for example, in the case of a two-face machine using a 9B machine manufactured by HAMAI, it is preferably 10 rpm or more and 30 rpm or less, more preferably 15 rpm or more and 25 rpm or less.
利用本發明研磨工具20之硬脆材料之研磨可為乾式者、亦可為一面供給包含冷卻液或游離研磨粒之研磨液一面進行之濕式者。一面供給包含游離研磨粒之研磨液,一面使本發明之研磨工具20滑動接觸於被研磨物10進行研磨時,由於良好地促進研磨工具中之金剛石粒子之自磨銳性使硬脆材料之穩定加工變得更容易故較佳。於本發明之研磨物之製造方法中,研磨之主體為使用金剛石固定研磨粒之本發明之研磨工具,游離研磨粒為用以使研磨效率提高之助劑。與游離研磨粒併用尤其於本發明之研磨工具之金屬基質包含Cu-Sn系合金之情形時,在促進縮短研磨工具之加工速率上發揮較高效果。 The hard and brittle material of the polishing tool 20 of the present invention may be a dry type or a wet type which is supplied to a polishing liquid containing a cooling liquid or a free abrasive grain. When the polishing slurry containing the free abrasive grains is supplied while sliding the abrasive tool 20 of the present invention into contact with the workpiece 10, the hard and brittle material is stabilized by the self-sharpening property of the diamond particles in the polishing tool. Processing becomes easier and better. In the method for producing an abrasive according to the present invention, the main body to be polished is the abrasive tool of the present invention using diamond-fixed abrasive grains, and the free abrasive particles are auxiliary agents for improving the polishing efficiency. In the case where the metal matrix particularly used in the abrasive tool of the present invention contains a Cu-Sn-based alloy in combination with the free abrasive grains, it exerts a high effect in promoting the shortening of the processing rate of the abrasive tool.
作為游離研磨粒,可為金剛石以外者,通常使用修正莫氏硬度6以上者,較佳為修正莫氏硬度12以上者。游離研磨粒自自磨銳性作用之觀點而言,較佳為碳化矽(修正莫氏硬度13)、氧化鋁(修正莫氏硬度12),更佳為碳化矽。游離研磨粒之平均粒徑較小,尤其小於研磨工具之金剛石粒子之平均粒徑時,易於防止對被研磨物造成損傷故而較佳。又,游離研磨粒之平均粒徑為一定大小以上時自加工之持續性之觀點而言較佳。自該等觀點而言,作為游離研磨粒之平均粒徑較佳為0.1μm以上20μm以下者,更佳為1μm以上8μm以下者,特佳為2μm以上4μm以下者。該平均粒徑可藉由雷射式粒度分佈計測定。作為研 磨液通常使用該游離研磨粒之濃度為40質量%以下者。使用研磨液之游離研磨粒之濃度特別低於20質量%以下者在降低製造成本或降低丟棄成本之觀點而言較佳。又,研磨液之游離研磨粒濃度為2質量%以上時自良好地促進研磨工具中金剛石粒子之自磨銳性之觀點而言較佳。自該等觀點而言,研磨液中游離研磨粒濃度更佳為5質量%以上20質量%以下,特佳為5質量%以上10質量%以下。研磨液之供給流量依存於加工機尺寸,但若為例如使用HAMAI公司製造之9B機之兩面加工機之情形,較佳為1000cc/min以上10000cc/min以下,更佳為3000cc/min以上5000cc/min以下。 As the free abrasive grains, those having a modified Mohs hardness of 6 or more may be used, and those having a Mohs hardness of 12 or more are preferably used. The free abrasive grains are preferably cerium carbide (modified Mohs hardness 13), alumina (modified Mohs hardness 12), and more preferably cerium carbide from the viewpoint of self-sharpening action. When the average particle diameter of the free abrasive grains is small, particularly when it is smaller than the average particle diameter of the diamond particles of the polishing tool, it is preferable to prevent damage to the workpiece. Further, when the average particle diameter of the free abrasive grains is a certain size or more, it is preferable from the viewpoint of the durability of the processing. From these viewpoints, the average particle diameter of the free abrasive grains is preferably 0.1 μm or more and 20 μm or less, more preferably 1 μm or more and 8 μm or less, and particularly preferably 2 μm or more and 4 μm or less. The average particle diameter can be measured by a laser particle size distribution meter. As research The concentration of the free abrasive grains is usually 40% by mass or less. The concentration of the free abrasive grains using the polishing liquid is particularly preferably less than 20% by mass, which is preferable from the viewpoint of reducing the production cost or reducing the disposal cost. Further, when the free abrasive concentration of the polishing liquid is 2% by mass or more, it is preferable from the viewpoint of favorably promoting the sharpness of the diamond particles in the polishing tool. From these viewpoints, the concentration of the free abrasive grains in the polishing liquid is more preferably 5% by mass or more and 20% by mass or less, and particularly preferably 5% by mass or more and 10% by mass or less. The supply flow rate of the polishing liquid depends on the size of the processing machine. However, in the case of using a two-side processing machine of a 9B machine manufactured by HAMAI, for example, it is preferably 1000 cc/min or more and 10000 cc/min or less, more preferably 3,000 cc/min or more and 5000 cc/ Min below.
作為研磨液之游離研磨粒之分散介質,可無特別限制地使用水及水與有機溶劑之混合物等。作為有機溶劑,較佳為水性者,例如可使用可溶系或乳膠系等各種水溶性研削用油劑(冷卻液)。 As the dispersion medium of the free abrasive grains of the polishing liquid, water, a mixture of water and an organic solvent, or the like can be used without particular limitation. As the organic solvent, those which are preferably aqueous, for example, various water-soluble grinding oils (coolant) such as a soluble or latex type can be used.
使用本實施形態之研磨工具之研磨例如代替先前使用金剛石漿料及Cu-Sn系合金之拋光壓盤之拋光的最終步驟(L2步驟)之一部分或全部,藉此可大幅地縮短硬脆材料之加工時間、降低製造成本、使獲得之硬脆材料之被研磨物之幾何精度提高並使成品率提高。 The polishing using the polishing tool of the present embodiment replaces, for example, part or all of the final step (L2 step) of polishing of the polishing platen previously using the diamond slurry and the Cu-Sn-based alloy, whereby the hard and brittle material can be greatly shortened. The processing time, the manufacturing cost are reduced, the geometric accuracy of the workpiece to be obtained of the hard and brittle material is improved, and the yield is improved.
作為使用本發明之研磨工具製造之硬脆材料之研磨物,列舉使用於半導體裝置或光裝置之各種基板或光學透鏡。例如,於硬脆材料為藍寶石之情形時,可列舉以氮化鎵(GaN)為代表之氮化物系化合物半導體之磊晶成長用基板、成膜Si之SOS基板、液晶投影機用偏光器保持板、蓋玻璃等。 Examples of the abrasive of the hard and brittle material produced by using the polishing tool of the present invention include various substrates or optical lenses used in a semiconductor device or an optical device. For example, when the hard and brittle material is sapphire, a substrate for epitaxial growth of a nitride-based compound semiconductor represented by gallium nitride (GaN), an SOS substrate on which Si is formed, and a polarizer for a liquid crystal projector are used. Plate, cover glass, etc.
[實施例] [Examples]
以下,藉由實施例更詳細說明本發明。然而,本發明之範圍不限定於該等實施例。除非另有說明,否則「%」及「份」分別指「質量%」及「質量份」。 Hereinafter, the present invention will be described in more detail by way of examples. However, the scope of the invention is not limited to the embodiments. Unless otherwise stated, "%" and "parts" refer to "% by mass" and "parts by mass" respectively.
[實施例1] [Example 1]
(1)研磨工具之製造 (1) Manufacturing of grinding tools
將作為構成金屬基質或其原料之金屬粉末的Cu-Sn粉72份、Sn粉10份及Cu粉10份,與作為研磨粒之平均粒徑9μm之金剛石粒子3份、Ni粉3份、及TiH2 5份混合獲得混合粉。Cu-Sn粉係以質量比1:1霧化Cu與Sn獲得之合金粉。將獲得之混合粉加壓成形。加壓成形係以原料之密度成為6.0g/cm3之方式,於直徑7mm×高度10mm之圓柱狀模具中裝模後,以4600kgf/cm2之壓力進行壓製。其後,將加壓成形之成形物在非氧化性氛圍下燒成。作為非氧化性氛圍,使用氮稀釋氫氣體(氫氣濃度:30體積%)。燒成時之保持溫度為645℃,該溫度之保持時間為3小時。藉由以上步驟,獲得實施例1之研磨工具。所得研磨工具藉由ICP發光分析裝置確認含有89質量%之Cu量50%Sn量50%之Cu-Sn系合金粉。又,源自TiH2之Ti在研磨工具中以TiC之形態被檢測出。 72 parts of Cu-Sn powder, 10 parts of Sn powder, and 10 parts of Cu powder, and 3 parts of diamond particles having an average particle diameter of 9 μm, 3 parts of Ni powder, and 3 parts of Ni powder, which are metal powders constituting a metal substrate or a raw material thereof. Mixing TiH 2 5 parts to obtain a mixed powder. The Cu-Sn powder is an alloy powder obtained by atomizing Cu and Sn at a mass ratio of 1:1. The obtained mixed powder was pressure molded. The press molding was carried out in a cylindrical mold having a diameter of 7 mm and a height of 10 mm so that the density of the raw material became 6.0 g/cm 3 , and then pressed at a pressure of 4,600 kgf/cm 2 . Thereafter, the press-formed molded product is fired in a non-oxidizing atmosphere. As a non-oxidizing atmosphere, hydrogen gas (hydrogen gas concentration: 30% by volume) was diluted with nitrogen. The temperature at the time of firing was 645 ° C, and the holding time of this temperature was 3 hours. By the above steps, the grinding tool of Example 1 was obtained. The obtained polishing tool was confirmed to contain Cu-Sn-based alloy powder containing 89% by mass of Cu and 50% of Sn in an amount of 50% by an ICP emission spectrometer. Further, Ti derived from TiH 2 was detected in the form of TiC in the polishing tool.
將所得研磨工具藉由金剛石刀切斷,並使金濺鍍蒸鍍於所得之剖面上。接著,以加速電壓:2.5kV、倍率5000倍之條件以掃描型電子顯微鏡(HITACHI公司製造S-4700)拍攝剖面。 The resulting abrasive tool was cut by a diamond knife and gold sputter was deposited on the resulting cross section. Next, a cross section was taken with a scanning electron microscope (S-4700, manufactured by HITACHI Co., Ltd.) under the conditions of an acceleration voltage of 2.5 kV and a magnification of 5000 times.
(2)研磨之評價 (2) Evaluation of grinding
將實施例1之研磨工具使用圖1及圖2所示之兩面加工機1(HAMAI公司製造9B機),自設置於上述上壓盤3與上述下壓盤2之冷卻液孔,供給包含游離研磨粒之研磨液並使研磨工具20滑動接觸於被研磨物10進行研磨。供於以下條件之拋光步驟進行60分鐘研磨。被削物之加工速率示於表1。此處提及之加工速率表示每1分鐘被削材料之去除量。 The polishing tool of the first embodiment uses the double-face processing machine 1 (manufactured by HAMAI Co., Ltd. 9B machine) shown in Fig. 1 and Fig. 2, and is supplied from the cooling liquid holes of the upper platen 3 and the lower platen 2, and is supplied with free The abrasive slurry is ground and the abrasive tool 20 is brought into sliding contact with the workpiece 10 for grinding. The polishing step for the following conditions was carried out for 60 minutes. The processing rate of the object to be cut is shown in Table 1. The processing rate referred to herein represents the amount of material removed per minute.
<研磨條件> <grinding conditions>
被研磨物10:圓板狀之藍寶石晶圓(厚度1mm、直徑50mm) Object to be polished 10: Disc-shaped sapphire wafer (thickness 1 mm, diameter 50 mm)
加工壓力:0.18kgf/cm2 Processing pressure: 0.18kgf/cm 2
兩面加工機之上下壓盤旋轉數:20rpm Number of rotations of the lower platen on the two-sided processing machine: 20 rpm
游離研磨粒:碳化矽(修正莫氏硬度13)、平均粒徑4μm Free abrasive grains: niobium carbide (corrected Mohs hardness 13), average particle size 4 μm
研磨液中之游離研磨粒濃度:10質量% Free abrasive particle concentration in the slurry: 10% by mass
研磨液之供給流量:5000cc/min Supply flow rate of slurry: 5000cc/min
研磨液中之分散介質:將水溶性研削用油劑(八千代Micro Science有限公司製「DIACUT W」)在水中以體積比10倍稀釋者。 Dispersion medium in the polishing liquid: A water-soluble grinding oil agent ("DIACUT W" manufactured by Yachiyo Micro Science Co., Ltd.) was diluted in water by 10 times in a volume ratio.
[比較例1] [Comparative Example 1]
於實施例1之「(1)研磨工具之製造」中,除了不添加TiH2以外,與實施例1相同地製造比較例1之研磨工具。以與實施例1相同之條件獲得比較例1之研磨工具剖面之SEM照片。所得之SEM照片以圖5顯示。又,將所得之比較例1之研磨工具供於與實施例1之「(2)研磨之評價」相同之評價。其結果示於表1。 In the "(1) Manufacture of the polishing tool" of the first embodiment, the polishing tool of Comparative Example 1 was produced in the same manner as in Example 1 except that TiH 2 was not added. An SEM photograph of the cross section of the polishing tool of Comparative Example 1 was obtained under the same conditions as in Example 1. The resulting SEM photograph is shown in Figure 5. Moreover, the obtained polishing tool of Comparative Example 1 was subjected to the same evaluation as "(2) Evaluation of polishing" of Example 1. The results are shown in Table 1.
[比較例2] [Comparative Example 2]
除了作為Cu-Sn粉,使用將Cu與Sn以質量比77:23霧化獲得之合金粉,並將Sn粉之量設為23份,Cu粉之量設為77份,且不添加TiH2以外,與實施例1相同地獲得比較例2之研磨工具。將獲得之研磨工具供於與實施例1之「(2)研磨之評價」相同之評價。其結果示於表1。 In addition to being Cu-Sn powder, an alloy powder obtained by atomizing Cu and Sn at a mass ratio of 77:23 was used, and the amount of Sn powder was set to 23 parts, the amount of Cu powder was set to 77 parts, and TiH 2 was not added. The polishing tool of Comparative Example 2 was obtained in the same manner as in Example 1 except for the above. The obtained abrasive tool was subjected to the same evaluation as "(2) Evaluation of grinding" of Example 1. The results are shown in Table 1.
自圖4與圖5之比較可知,於圖5之拍攝比較例1之研磨工具剖面之照片中,見到金剛石粒子發出白光。其表示於比較例1中,金剛石粒子之表面露出。另一方面,於圖4之拍攝實施例1之研磨工具剖面之照片中,未見到此部分,相當於金剛石粒子之突起物被金屬基質被 覆。由此判斷:於比較例1中,金剛石粒子與周圍金屬基質之濡濕性差,觀察到金剛石粒子露出,相對於此,實施例1之研磨工具中,藉由使用可形成氫化物之金屬,金剛石粒子對金屬基質之濡濕性提高,且金屬基質中金剛石粒子之保持力提高。另,如上所述圖4及圖5為剖面照片,但由於任一者均為拍攝面向研磨工具中之空隙之部分的照片,故明確地顯示了金剛石粒子表面狀態之不同。 As can be seen from a comparison between Fig. 4 and Fig. 5, in the photograph of the cross section of the polishing tool of Comparative Example 1 of Fig. 5, it was found that the diamond particles emitted white light. This is shown in Comparative Example 1, in which the surface of the diamond particles was exposed. On the other hand, in the photograph of the cross section of the polishing tool of the photographing example 1 of Fig. 4, this portion is not seen, and the projection corresponding to the diamond particles is cover. From this, it was judged that in Comparative Example 1, the wettability of the diamond particles and the surrounding metal matrix was inferior, and the diamond particles were observed to be exposed. In contrast, in the polishing tool of Example 1, by using a metal capable of forming a hydride, the diamond particles were used. The wettability of the metal matrix is improved, and the retention of the diamond particles in the metal matrix is improved. 4 and 5 are cross-sectional photographs as described above, but since either of them is a photograph of a portion facing the gap in the polishing tool, the difference in the surface state of the diamond particles is clearly shown.
且,自上述表1之結果,尤其自實施例1及比較例1之比較,判斷含有可形成氫化物之金屬之研磨工具係加工能力大幅提高,並大幅地縮短硬脆材料之加工時間。如此本發明之研磨工具係硬脆材料之加工能力高,且可實現硬脆材料之穩定加工,藉由代替拋光之最終步驟(L2步驟)之一部分或全部,可大幅地縮短硬脆材料之加工時間,降低製造成本,使獲得之硬脆材料之研磨物之幾何精度提高且成品率提高。 Further, from the results of the above Table 1, in particular, from the comparison between Example 1 and Comparative Example 1, it was judged that the processing capability of the polishing tool containing the metal capable of forming a hydride was greatly improved, and the processing time of the hard and brittle material was greatly shortened. Therefore, the grinding tool of the present invention has high processing ability of hard and brittle materials, and can realize stable processing of hard and brittle materials, and can substantially shorten the processing of hard and brittle materials by replacing part or all of the final step of polishing (L2 step). Time, reducing manufacturing costs, improving the geometric accuracy of the obtained hard and brittle material and improving the yield.
[實施例2] [Embodiment 2]
於本實施例中,將[實施例1]之「(1)研磨工具之製造」中製造之研磨工具使用SiC加工。作為被研磨物10,使用圓板狀之SiC晶圓(厚度1mm、直徑50mm)。又,將加工壓力設為0.20Kgf/cm2。又,將研磨液中之游離研磨粒之濃度設為5質量%。除了該等方面以外,以與實施例1相同之條件進行相同方法之研磨。其結果,加工速率為1.12μm/分。 In the present embodiment, the polishing tool manufactured in "(1) Manufacturing of grinding tool" of [Example 1] was processed using SiC. As the workpiece 10, a disk-shaped SiC wafer (thickness: 1 mm, diameter: 50 mm) was used. Further, the processing pressure was set to 0.20 Kgf/cm 2 . Further, the concentration of the free abrasive grains in the polishing liquid was set to 5% by mass. Except for these aspects, the same method of polishing was carried out under the same conditions as in Example 1. As a result, the processing rate was 1.12 μm/min.
1‧‧‧兩面加工機 1‧‧‧Two-sided processing machine
2‧‧‧下壓盤 2‧‧‧Unloading plate
3‧‧‧上壓盤 3‧‧‧Upper platen
4‧‧‧壓盤支持部 4‧‧‧ Platen Support Department
5‧‧‧基底 5‧‧‧Base
11‧‧‧氣缸 11‧‧‧Cylinder
11a‧‧‧輸出桿 11a‧‧‧ Output rod
12‧‧‧托架 12‧‧‧ bracket
13‧‧‧轉動件 13‧‧‧Rotating parts
X-X‧‧‧線 X-X‧‧‧ line
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