TW201642333A - Wafer cutting process - Google Patents

Abstract

This invention is a wafer cutting process that is an innovative operation mode mainly different from a current wafer cutting operation so that a wafer and a material will not suffer condition of dark crack or crack during cutting operation. Therefore, its cutting quality can be improved and has the performance of lowering the production cost and improving the production yield.

Description

Wafer cutting process

The invention relates to a wafer cutting process, in particular to a wafer (Wafer) cutting by a laser beam and a trowel, so that the wafer (wafer) and the material are not dark when cutting. Cracking or cracking occurs, and is suitable for wafer (Wafer) cutting processes or similar processes.

The current wafers (Wafer) are becoming more and more precise, and the wafers are getting smaller and smaller. Therefore, care must be taken in wafer (Wafer) cutting operations to avoid wafers (Wafer), which is currently in the industry. Most of the Wafer cutting operations have the following two cutting modes.

The first wafer (Wafer) cutting operation is to first cut the first knife by a cutting blade suitable for cutting the wafer (Wafer), and then cut the second knife by a cutting blade suitable for cutting the material. The second knife is to cut the material at the first knife-cut wafer (Wafer). Therefore, when the second knife cuts the material, it is easy to cause the material to be cracked or cracked, so that the production yield is lowered, and The relative wafer (Wafer) cutting quality is not good.

Another second wafer (Wafer) cutting operation is to first align the material with the wafer (wafer), and place the material on the upper layer and the wafer (wafer) on the lower layer, and firstly use the cutting blade suitable for cutting the material. The cutting of the first knife is performed to cut and separate the material, and after the first knife is cut, the wafer (Wafer) is turned from the lower layer position to the upper layer position, and the material originally located in the upper layer is turned into the lower layer position, and then adapted. Cutting the wafer (wafer) cutter to perform the second knife The cutting, therefore, when the second knife cuts the wafer (Wafer), it is easy to cause the wafer (Wafer) to be cracked or cracked, and the production yield is not high, but also because of the increase of the flipping operation. The process makes it easy to generate a wafer (wafer) risk of being broken, and the production cost is relatively high.

Therefore, in view of the above-mentioned deficiencies, the present inventors have been able to propose a wafer dicing process which does not cause occurrence of cracking or cracking, so that the user can easily operate the assembly, and is devoted to research and design to provide use. The convenience is the motivation of the invention to be developed by the inventors.

The main object of the present invention is to provide a wafer dicing process for assisting wafer (Wafer) cutting by using a laser beam and a trowel to prevent wafers (wafer) and materials from being cracked during cutting operations. Or the occurrence of cracking, etc., in order to improve the cutting quality, and to reduce the production cost and improve the production yield efficiency, thereby increasing the overall practicality and convenience.

Another object of the present invention is to provide a wafer dicing process, in which a laser beam is first burned through a bonding layer after being cut through a wafer, and then irradiated onto a material that has not been cut. Or, after cutting through the Wafer and the Bonding Layer, the laser beam can be directly irradiated onto the material that has not been cut, and a laser beam is used to project a groove on the surface of the material that has not been cut. For subsequent cutting operations to reduce the risk of cracking or cracking, thereby increasing the overall practicality and convenience.

A further object of the present invention is to provide a wafer dicing process in which a material is made of a film by a trowel which is split by a groove corresponding to a surface of the material corresponding to the surface of the film (Tape). The surface begins to crack and separate into the groove on the surface of the material to complete the Wafer cutting. Cutting, so that the present invention has the ability to increase the unit hourly capacity (UPH), thereby increasing the overall utility and rapidity.

In order to achieve the above object, the first method of the wafer dicing process of the present invention is mainly to attach a layer of material to the film, and then to provide a bonding layer on the material to make the wafer ( Wafer) can be bonded to the material through a bonding layer, and the main steps are as follows: (a) using a cutter having a hardness higher than that of the wafer (Wafer) to start cutting from the surface of the wafer (Wafer), and Cutting through the wafer (Wafer) and bonding layer (Bonding Layer); (b) then cutting through the wafer (Wafer) and the bonding layer (Bonding Layer) into a laser beam, so that the laser beam can be directly irradiated (c) through the laser beam, a groove is formed on the surface of the material that has not been cut; (d) is further transmitted through a trowel from the surface of the material corresponding to the surface of the tape (Tape) The splitting begins; and (e) the material can be cracked and separated from the surface of the tape to the groove of the surface of the material to complete the wafer (Wafer) cutter.

In addition, the second way of the wafer dicing process of the present invention is mainly to attach a layer of material to the film, and then to provide a bonding layer on the material to enable the wafer to pass through. The bonding layer is attached to the material, and the main steps are as follows: (a) using a dicing blade having a hardness higher than that of the wafer (Wafer), cutting from the surface of the wafer (Wafer) and cutting through the wafer (Wafer); (b) injecting a laser beam into the wafer (Wafer), so that the laser beam can be burned through the bonding layer and then irradiated onto the material that has not been cut; And ejecting a groove through the laser beam on the surface of the material that has not been cut; (d) re-transporting from the surface of the surface of the material corresponding to the surface of the film by a trowel; and e) Allow the material to be cracked and separated from the surface of the tape to the groove on the surface of the material to complete the Wafer cutter.

In order to further understand the features, features and technical contents of the present invention, please The detailed description and drawings of the present invention are to be understood by reference

10‧‧‧ Wafer (Wafer)

11‧‧‧ surface

20‧‧‧Materials

21‧‧‧ surface

22‧‧‧ Groove

30‧‧‧Tape

31‧‧‧ surface

40‧‧‧Bounding Layer

50‧‧‧Cutting knife

60‧‧‧Laser beam

70‧‧‧劈

S100‧‧‧(a) Cutting from the Wafer surface using a cutter with a higher hardness than the Wafer, and cutting through the wafer (Wafer) and the bonding layer (Bonding Layer)

S110‧‧‧(b) Injecting a laser beam into the Wafer and the Bonding Layer, so that the laser beam can directly illuminate the material that has not been cut.

S120‧‧‧(c) and through the laser beam, a groove is formed on the surface of the material that has not been cut

S130‧‧‧(d) further through a trowel to start the splitting of the groove corresponding to the surface of the material (Tape)

S140‧‧‧(e) allows the material to be cracked and separated from the surface of the tape to the groove on the surface of the material to complete the wafer (Wafer) cutter

S200‧‧‧(a) First use a cutter with a hardness higher than Wafer to cut from the Wafer surface and cut through the wafer (Wafer)

S210‧‧‧(b) Injecting a laser beam into the Wafer, so that the laser beam can be burned through the Bonding Layer and then irradiated onto the material that has not been cut.

S220‧‧‧(c) and through the laser beam, a groove is formed on the surface of the material that has not been cut

S230‧‧‧(d) further through a trowel to start the splitting of the groove corresponding to the surface of the material (Tape)

S240‧‧‧(e) allows the material to be cracked and separated from the surface of the tape to the groove on the surface of the material to complete the wafer (Wafer) cutter

Figure 1 is a flow chart showing the main process steps of the first embodiment of the present invention.

Fig. 2 is a schematic view showing the structure of the first embodiment of the present invention which has not been subjected to the cutting process.

Fig. 3 is a schematic view showing the operation of cutting using a cutting blade in the step (a) of the first embodiment of the present invention.

Fig. 4 is a schematic view showing the operation of the laser beam irradiation in the steps (b) and (c) of the first embodiment of the present invention.

Fig. 5 is a schematic view showing the cleaving operation using the trowel according to the steps (d) and (e) of the first embodiment of the present invention.

Figure 6 is a flow chart showing the main process steps of the second embodiment of the present invention.

Figure 7 is a schematic view showing the structure of the second embodiment of the present invention which has not been subjected to a cutting process.

Figure 8 is a schematic view showing the cutting operation using a cutting blade in the step (a) of the second embodiment of the present invention.

Figure 9 is a schematic view showing the operation of the laser beam irradiation in the steps (b) and (c) of the second embodiment of the present invention.

Figure 10 is a schematic view showing the cleaving operation using the trowel according to the steps (d) and (e) of the second embodiment of the present invention.

Please refer to Figures 1 to 10 for the first embodiment and the second embodiment of the present invention. A schematic diagram of the embodiment, and the preferred embodiment of the wafer dicing process of the present invention is applied to a wafer (Wafer) dicing process or the like, particularly when wafers (wafer) 10 and material 20 are used for cutting operations. It does not cause cracking or cracking, etc., in order to improve its cutting quality, and has the effect of reducing production cost and increasing production yield.

The first and second methods of the wafer dicing process of the present invention are mainly to attach a layer of material 20 to the film 30, and a bonding layer 40 is provided on the material 20. The wafer (Wafer) 10 can be bonded to the material 20 through a bonding layer 40 (as shown in FIGS. 2 and 7). The material 20 described above is any one of glass or ceramic, so that the wafer (wafer) 10 can be attached to glass or ceramic for cutting work. In addition, the adhesive film (Tape) 30 has a strong adhesive force, so that the material 20 attached to the tape 30 during the cutting process is not easily peeled off, and the glue is irradiated by irradiating the ultraviolet light (UV) light source. The viscosity of the film 30 is lowered, so that the material 20 attached to the tape 30 can be easily separated without leaving a residual glue.

In the first method of the above-mentioned wafer dicing process, the first step S100 is to (a) first use a dicing blade having a hardness higher than the wafer (wafer) to start cutting from the wafer surface and cut through the wafer. Wafer and bonding layer; the wafer (Wafer) 10 of the present invention is a bismuth (Si) component, and the hardness of bismuth (Si) is about lower than that of diamond, so the hardness is diamond. It is feasible to cut the knives 50 of the grade material and to reduce the body of the damaged wafer (Wafer) 10. The present invention cuts the surface 11 of the wafer (wafer) 10 with a diamond-grade cutter 50, and further cuts through the wafer (Wafer) 10 body while simultaneously cutting through the wafer (Wafer) 10. Bonding layer 40 to surface 21 of material 20 (as shown in FIG. 3) to complete the first wafer (Wafer) 10 and bonding layer (Bonding) Layer) 40 cutting operation, and after completion of the above step S100, the next step S110 is performed.

In addition, the step S110 performed in the next step is: (b) injecting a laser beam into the Wafer and the Bonding Layer, so that the laser beam can directly illuminate the material that has not been cut; After the diamond level cutting blade 50 cuts through the wafer (Wafer) 10 and the bonding layer 40, a laser beam 60 is cut through the wafer 10 and the bonding layer 40. Injection (as shown in Fig. 4), and the laser beam 60 is a light source of ultraviolet light or a light source of other color light such as blue light, blue-violet light, etc., so that the laser beam 60 can be focused on one Very small points to create deformation, therefore, the laser beam 60 can be directly irradiated onto the material 20 that has not been cut, wherein the material 20 can be glass or ceramic, allowing the surface of the glass or ceramic to be irradiated by the laser beam 60. A point is shot to focus the deformation, and after the above step S110 is completed, the next step S120 is performed.

In addition, the next step S120 is (c) and a laser beam is used to project a groove on the surface of the material that has not been cut; when the laser beam 60 is cut through the wafer (Wafer) 10 and the bonding layer (Bonding Layer) After 40 shots onto the surface 21 of the uncut material 20 (such as glass or ceramic), the focusing characteristics of the laser beam 60 are utilized on the surface of the material 20 (such as glass or ceramic) that has not been cut. A groove 22 is formed on the film 21 (as shown in FIG. 4), wherein the groove 22 can be V-shaped, so that a gap can be formed on the surface 21 of the material 20 (such as glass or ceramic) that has not been cut. In order to perform the subsequent splitting operation, the next step S130 is performed after the above step S120 is completed.

When the step S120 (c) is performed, the material 20 and the tape 30 which are emitted by the laser beam 60 from the recess 22 can be inverted to make the film (Tape) 30 can be located above (as shown in Fig. 5), and is sequentially a material 20 that is projected out of a recess 22 and a Bonding Layer 40 that is cut through, and is located at the bottom. The wafer (Wafer) 10 is cut so that the uncut material 20 (such as glass or ceramic) and the tape 30 are convenient for the next cutting operation.

In addition, the step S130 performed in the next step is (d) re-transmission through a trowel from the surface of the material surface corresponding to the surface of the film (Tape); when completed, the material 20 (such as glass) has not been cut. After a groove 22 is formed on the surface of either the ceramic or the like, the material 20 (such as glass or ceramic) which has not been cut is cut and separated. Therefore, the present invention is carried out by means of the file 70. Cracking the uncut material 20 (such as glass or ceramic), if it is directly cut into the wafer (wafer) 10 and the bonding layer 40 by the file 70, it may be easy to cut. The material 20 (such as glass or ceramic) causes cracking or cracking, and the production quality is very unsatisfactory.

Therefore, the present invention is modified by the groove 22 of the surface 21 of the material 20 corresponding to the surface 31 of the film 30 (as shown in Fig. 5), since the material 20 is attached to the film. (Tape) 30, so the film 30 has the function of the protective material 20 (such as glass or ceramic), and when the file 70 first touches the film 30, the impact force can be slowed down. The material 20 (such as glass or ceramic) that has not been cut is not subjected to direct impact to avoid occurrence of cracking or cracking, and the next step S140 is performed after the above step S130 is completed.

In addition, the next step S140 is (e) allowing the material to be separated from the surface of the film to the groove of the surface of the material to complete the wafer (Wafer) cutter; when the file 70 is first glued The surface of the film 30 begins to split and breaks into the material 20 (such as glass) After the body or any of the materials, such as glass or ceramic, the surface 21 of the material 20 (such as glass or ceramic) is first used to project a groove 22 by using the laser beam 60 to make the material 20 (such as glass or ceramic). a) the body is deformed, so that it is easy to start the crack separation from the surface 31 of the film 30 to the groove 22 of the surface 21 of the material 20 (such as glass or ceramic) (as shown in Fig. 5), Rather than cracking or cracking on the material 20 (such as glass or ceramic) or on the wafer (Wafer) 10 as in prior art cutting operations.

In the second method of the above wafer dicing process, the first step S200 is (a) using a dicing blade having a hardness higher than that of the wafer (Wafer) to start cutting from the Wafer surface and cutting through the wafer. (Wafer); the wafer (Wafer) 10 of the present invention is a bismuth (Si) component, and the hardness of the bismuth (Si) is about lower than that of the diamond. Therefore, the cutter 50 having a hardness of a diamond grade is used. It is possible to perform the cutting and reduce the damage of the wafer (Wafer) 10 body. However, the present invention cuts the surface 11 of the wafer (Wafer) 10 with a diamond-grade cutting blade 50, and further cuts through the wafer (Wafer) 10 body (as shown in Fig. 8) to complete the first step. The wafer (Wafer) 10 is cut, and after the above step S200 is completed, the next step S210 is performed.

In addition, the next step S210 is to (b) inject a laser beam into the wafer (Wafer), so that the laser beam can be burned through the bonding layer first, and then irradiated to the uncut surface. On the material; when the diamond-grade cutting blade 50 cuts through the wafer (Wafer) 10, a laser beam 60 is injected through the wafer (Wafer) 10, so that the laser beam 60 can be burned through first. a bonding layer 40, and then irradiating the laser beam 60 onto the material 20 that has not been cut (as shown in FIG. 9), and the laser beam 60 is a light source using ultraviolet light or other color light. Such as blue light, blue-violet light, etc., to enable the laser beam 60 to be focused on A very small point is used to cause deformation. Therefore, the laser beam 60 can be burned through the bonding layer 40 and then irradiated onto the material 20 that has not been cut. The material 20 can be glass or ceramic. The surface energy such as glass or ceramic is shot by the laser beam 60 to focus and deform, and after the above step S210 is completed, the next step S220 is performed.

In addition, the next step S220 is (c) and a laser beam is used to project a groove on the surface of the material that has not been cut; when the laser beam 60 is injected through the wafer (Wafer) 10, it is burned through. After the bonding beam 40 is irradiated onto the surface 21 of the material 20 (such as glass or ceramic) which has not been cut, the focusing characteristic of the laser beam 60 is utilized for the material 20 that has not been cut. A groove 22 (as shown in Fig. 9) is formed on the surface 21 (such as glass or ceramic), wherein the groove 22 can be V-shaped, so that the material 20 that has not been cut (such as glass or ceramics, etc.) A gap may be formed on the surface 21 of any one of them to facilitate the subsequent splitting operation, and after the above step S220 is completed, the next step S230 is performed.

When the step S220 (c) is performed, the material 20 and the tape 30 which are emitted by the laser beam 60 from the recess 22 can be turned over so that the film 30 can be located above. (As shown in Fig. 10), and sequentially, the material 20 from which a recess 22 is projected and the bonding layer 40 that is shot through, and the wafer that is cut through at the bottom is Wafer. 10. Let the uncut material 20 (such as glass or ceramic) and the tape 30 be convenient for the next cutting operation.

In addition, the next step S230 is (d) re-transmission through a trowel from the surface of the material surface corresponding to the surface of the film (Tape); when completed, the material 20 (such as glass) has not been cut. Or a ceramic, etc.), after a groove 22 is ejected on the surface, The material 20 that has not been cut (such as any one of glass or ceramic) is cut and separated. Therefore, the present invention is a method of splitting the uncut material 20 (such as glass or ceramic) by means of a file 70, because If the trowel 70 is directly inserted into the Wafer 10 and the Bonding Layer 40, it may be easy to cause cracking or cracking of the material 20 (such as glass or ceramic) that has not been cut. The situation occurred and its production quality was very unsatisfactory.

Therefore, the present invention is modified by the groove 22 of the surface 21 of the material 20 corresponding to the surface 31 of the film 30 (as shown in Fig. 10), since the material 20 is attached to the film. (Tape) 30, so the film 30 has the function of the protective material 20 (such as glass or ceramic), and when the file 70 first touches the film 30, the impact force can be slowed down. The material 20 (such as glass or ceramic) that has not been cut is not subjected to a direct impact to avoid occurrence of cracking or cracking, and the completion of the above step S230 proceeds to the next step S240.

In addition, the next step S240 is (e) allowing the material to be separated from the surface of the film to the groove of the surface of the material to complete the wafer (Wafer) cutter; when the file 70 is first glued After the surface 31 of the film 30 begins to split and breaks into the body of the material 20 (such as glass or ceramic), the surface 21 of the material 20 (such as glass or ceramic) is first lasered. The light beam 60 emits a recess 22 to deform the body of the material 20 (such as glass or ceramic), and thus, it is easy to go from the surface 31 of the film 30 to the material 20 (such as glass or ceramic). The cracking separation at the groove 22 of the surface 21 (as shown in Fig. 10) is not performed on the material 20 (such as glass or ceramics) or the wafer (Wafer) 10 as in the prior art cutting operation. There are cases of cracking or cracking.

Therefore, the first method and the second method of the wafer cutting process of the present invention are The wafer (Wafer) 10 and the material 20 can be assisted by the laser beam 60 and the trowel 70, so that the wafer (Wafer) 10 and the material 20 are not cracked or cracked during the cutting operation. In order to improve the cutting quality, and have the effect of reducing production costs and increasing production yield.

From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the foregoing objects, and the invention has been in accordance with the provisions of the patent law.

However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.

S100‧‧‧(a) Cutting from the Wafer surface using a cutter with a higher hardness than the Wafer, and cutting through the wafer (Wafer) and the bonding layer (Bonding Layer)

S110‧‧‧(b) Injecting a laser beam into the Wafer and the Bonding Layer, so that the laser beam can directly illuminate the material that has not been cut.

S120‧‧‧(c) and through the laser beam, a groove is formed on the surface of the material that has not been cut

S130‧‧‧(d) further through a trowel to start the splitting of the groove corresponding to the surface of the material (Tape)

S140‧‧‧(e) allows the material to be cracked and separated from the surface of the tape to the groove on the surface of the material to complete the wafer (Wafer) cutter

Claims (6)

A wafer dicing process, which mainly attaches a layer of material to a tape, and then has a bonding layer on the material to enable the wafer to be bonded through a bonding layer (Bonding Layer). In the material, the main steps are as follows: (a) first use the cutting blade with higher hardness than the wafer (wafer) to start cutting from the surface of the wafer (Wafer), and cut through the wafer (Wafer) and the bonding layer (Bonding) Layer); (b) injecting a laser beam into the Wafer and the Bonding Layer so that the laser beam can directly illuminate the material that has not been cut; (c) and through the thunder The beam of light ejects a groove on the surface of the material that has not been cut; (d) is further transmitted through a trowel from the surface of the material surface corresponding to the surface of the film (Tape); and (e) the material The wafer can be cracked and separated by the surface of the tape to the groove of the surface of the material to complete the wafer (Wafer) cutter. A wafer dicing process, which mainly attaches a layer of material to a tape, and then has a bonding layer on the material to enable the wafer to be bonded through a bonding layer (Bonding Layer). In the material, the main steps are as follows: (a) first use the cutting blade with higher hardness than Wafer to cut from the surface of the wafer (Wafer) and cut through the wafer (Wafer); (b) A laser beam is incident on the wafer (Wafer) so that the laser beam can be burned through the bonding layer and then irradiated onto the material that has not been cut; (c) and transmitted through the laser beam a groove is formed on the surface of the cut material; (d) is further transmitted through a trowel from the surface of the groove corresponding to the surface of the film (Tape) The splitting is performed; and (e) the material can be cracked and separated from the surface of the tape to the groove of the surface of the material to complete the wafer (Wafer) cutter. The wafer cutting process according to claim 1 or 2, wherein the step (c) further reverses the material and the film (Tape) which is ejected into a groove, so that the film can be made. Located at the top, in sequence, a material and a bonding layer are formed, and at the bottom is a wafer that is cut through. The wafer cutting process according to claim 1 or 2, wherein the material is further one of glass or ceramic. The wafer dicing process of claim 1 or 2, wherein in the step (c), a groove is formed on the surface of the material that has not been cut, and the groove is further shaped into a V shape. The wafer cutting process according to claim 1 or 2, wherein the cutting blade used in the step (a) is further made of a material having a hardness of a diamond grade.