TW201640606A - Reaction chamber and semiconductor processing apparatus - Google Patents

Abstract

A reaction chamber and semiconductor processing apparatus. In a reaction chamber are provided a base for bearing a substrate and a pressing ring. A rear blowing channel in communication with a rear blowing gas source is provided in the base. A ring seal apparatus is provided at an upper surface of the base. When the base drives the substrate upwards and lifts up the pressing ring, the pressing ring presses, in an overlapping manner, an edge region of the substrate, and the ring seal apparatus and a rear surface of the substrate contact such that the upper surface of the base at an inner side of the ring seal apparatus forms a sealed space with the rear surface of the substrate, and the rear blowing gas source provides a rear blowing gas to within the sealed space via the rear blowing channel. The reaction chamber can greatly decrease processing time while ensuring effective cooling of the substrate, and thus can improve productivity of a semiconductor processing apparatus, providing an economic benefit.

Description

Reaction chamber and semiconductor processing device

The invention belongs to the technical field of microelectronic processing, and in particular relates to a reaction chamber and a semiconductor processing device.

In the semiconductor fabrication process, in particular, an integrated circuit (IC) fabrication process, a via via (TSV) process, and a packaging process, a pre-clean process is required to remove impurities on the wafer surface before the process. The process quality of the subsequent deposition process is ensured to ensure the performance of the semiconductor device. The basic principle of the pre-cleaning process is that an inductively coupled plasma generating device is generally used to excite the process gas in the chamber to form a highly reactive and/or high-energy plasma by using a high-voltage alternating electric field generated by the RF power source, by means of the electric The slurry undergoes a chemical reaction and/or physical bombardment with the surface of the wafer to effect removal of impurities from the surface of the wafer. Fig. 1a is a schematic structural view of a conventional pre-cleaning chamber in a transfer state; Fig. 1b is a structural schematic view showing a conventional pre-cleaning chamber in a process state. Please refer to FIG. 1a and FIG. 1b together. The pre-cleaning chamber is provided with a base 10 and a thimble mechanism having a cooling function. Wherein, the susceptor 10 is used to carry the wafer S, and it can be raised and lowered between the transfer position and the process position, and the transfer position and the process position respectively refer to the positions of the susceptor 10 in the first and third figures, FIG. The transfer position refers to the position at which the susceptor 10 is loaded with the wafer S; the so-called process position refers to the position at which the susceptor 10 is pre-cleaned on the wafer S thereon. 2 is a perspective structural view of a conventional ejector mechanism. Referring to FIG. 2, the ejector mechanism includes a plurality of ejector pins 11 for carrying a wafer S. The pedestal 10 is provided with a through hole corresponding to the thimble 11 in one-to-one correspondence. Each of the thimbles 11 is capable of penetrating a through hole corresponding thereto, and when the susceptor 10 is at the transfer position, the top end of the ejector pin 11 is higher than the upper surface of the susceptor 10 and the transfer opening provided on the side wall of the pre-cleaning chamber 12 with the same height. The process of the pre-cleaning chamber is specifically: first, the pre-cleaning chamber is in a state as shown in FIG. 1a, and the robot carrying the wafer S loads the wafer S onto the ejector pin 11 via the transfer port 12; After loading S to the top end of the ejector pin 11, the susceptor 10 is raised toward the process position, and when it is raised to lift the wafer S on the ejector pin 11, the wafer S is carried by the susceptor 10; the susceptor 10 holds the wafer S After that, it continues to rise until it reaches the process position. Finally, after the susceptor 10 is in the process position, the process gas is introduced and the RF power source is loaded to perform the pre-cleaning process until the process ends. In practical applications, since the contact surface of the wafer S and the susceptor 10 has a low flatness, the two are not sufficiently contacted, and the environmental pressure of the pre-cleaning process is very low, generally in the millitorr stage. The amount of gas between the wafer S and the susceptor 10 is small, which causes heat transfer between the two to mainly rely on heat conduction of heat radiation and a small amount of gas, thereby causing low heat transfer between the wafer S and the susceptor 10, thus As the pre-cleaning process continues, the temperature of the wafer S continues to rise, causing damage to the wafer S when the temperature rises to a certain extent. To this end, the prior art generally adopts the following methods: after the pre-cleaning process is paused for a period of time, the cooling step is started, and the pre-cleaning chamber is inflated to bring the chamber pressure to several tens of Torr, so that the wafer S and the susceptor 10 The gas is increased to accelerate the gas heat conduction between the two, so that the wafer S is rapidly cooled; then the pre-cleaning process is continued, that is, the pre-cleaning chamber is evacuated, so that the pressure of the chamber reaches the millitorr level, and The pre-cleaning process is performed; thus, the pre-cleaning process is periodically suspended during the pre-cleaning process and the cooling step is added until the pre-cleaning process is completed. However, in practical applications, periodically adding a cooling step during the pre-cleaning process to avoid excessive temperature of the wafer inevitably has the following problems: the entire processing time of the pre-cleaning process is long due to the addition of the cooling step. This results in low productivity of the semiconductor processing equipment and directly leads to low economic efficiency; however, if the number of additions of the cooling step is too small, the temperature of the wafer tends to be high, which will still affect the process results and result in product yield. low.

The present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a reaction chamber and a semiconductor processing apparatus which can realize cooling of the wafer while the process is being processed, thereby eliminating the need to periodically suspend the process during the process. In order to increase the cooling step, the process time can be greatly reduced under the premise of ensuring effective cooling of the wafer, thereby increasing the productivity of the semiconductor processing apparatus, thereby improving economic efficiency. In order to solve the above problems, the present invention provides a reaction chamber in which a susceptor for carrying a wafer and a pressure ring for fixing the wafer are disposed; the susceptor is provided with a gas source connected to the back blow a back pipe; the upper surface of the base is provided with an annular sealing device; when the substrate drives the wafer to the process position, the pressure ring is laminated on the edge region of the wafer, the annular sealing device and the wafer The back contact forms a sealed space between the upper surface of the pedestal inside the annular sealing device and the back surface of the wafer, and the back blowing gas supplied from the back blowing gas source is delivered into the sealed space via the back blowing line. Preferably, the back-blowing line has a plurality of output ports disposed on an upper surface of the base, and each of the output ports is disposed near a center of the base; and an upper surface of the base is disposed on the upper surface of the base An annular groove disposed along a circumferential direction thereof and a strip-shaped groove corresponding to the output port, the annular groove being located inside the annular sealing device, and the two ends of each of the strip-shaped grooves respectively and the ring The groove and the corresponding output port are in communication. Preferably, the annular sealing device is an annular corner formed by cutting at an edge region of the upper surface of the base, and the upper surface of the base on the inner side of the annular corner is lower than the annular corner. Preferably, the reaction chamber is further provided with a support for supporting the pressure ring, the support member includes a support column, a support ring and a plurality of support rods, wherein a plurality of the support rods are disposed on the support ring, and Provided along the circumferential spacing of the support ring for supporting the pressure ring; the inner diameter of the support ring is larger than the diameter of the base, and a plurality of annular outer linings disposed around the outer circumference of the base are respectively provided with the support a first through hole corresponding to the rods, each of the support rods passing through the corresponding first through hole and engaging with the pressure ring, and the support rod is in a clearance fit with the first through hole; the support column is used for Support the support ring. Preferably, the lower surface of the pressure ring is provided with a plurality of blind holes, and each of the blind holes is disposed at a position of the lower surface of the pressure ring that is in contact with the support rod; To accommodate the top end of the support rod corresponding thereto. Preferably, the edge region of the lower surface of the pressure ring is provided with a convex portion, and the blind hole is disposed on the convex portion; when the pressure ring is laminated on the edge region of the wafer, the lower end surface of the convex portion covers The first through hole. Preferably, a plurality of thimbles for carrying the wafer are further included; the annular outer lining is provided with a plurality of second through holes respectively corresponding to the ejector pins, and each of the thimbles passes through when loading and unloading the wafer Corresponding second through hole, and the top end of the ejector pin is higher than the lower surface of the pressing ring than the lower surface of the pressing ring, and the thimble and the second through hole are in a clearance fit. Preferably, the plurality of thimbles are disposed on the support ring and spaced along the circumferential direction of the support ring. Preferably, the support member is used as a lining of the reaction chamber, the support member is disposed around the inner peripheral wall of the reaction chamber, and the support member has an annular groove with an opening facing upward and surrounding the inner peripheral wall of the reaction chamber. a groove; an outer diameter of the pressure ring being larger than an inner diameter of the annular groove; the pressure ring overlapping the inner ring wall of the annular groove; between the groove bottom of the annular groove and the outer edge of the pressure ring An elastic portion is also provided, by which the elastic member is subjected to stretching when the pressure ring is laminated on the wafer to effect a downward elastic force applied to the pressure ring. As another technical solution, the present invention also provides a semiconductor processing apparatus including a reaction chamber which employs the above-described reaction chamber. The present invention has the following beneficial effects: The present invention provides a reaction chamber for moving the susceptor away from the pressure ring during loading and unloading of the wafer to facilitate loading and unloading the wafer to the susceptor; and, during the process, the pressure ring is laminated on the edge of the wafer In the region, the annular sealing device is in contact with the back surface of the wafer such that the upper surface of the pedestal inside the annular sealing device forms a sealed space with the back surface of the wafer, which can be realized not only by the back blowing gas but also when the wafer is not blown or blown. The heat transfer between the wafer and the susceptor, and also the effect of avoiding back-breathing gas leakage by the annular seal to the process environment. Therefore, the reaction chamber provided by the present invention increases the back-blowing gas between the wafer and the susceptor during the process, and the back-blowing gas can conduct heat conduction between the wafer and the susceptor, that is, compared with the prior art reaction chamber. At the same time of the process, the wafer can be cooled, and the process is not required to be periodically suspended during the process to increase the cooling step, thereby greatly reducing the process time while ensuring effective cooling of the wafer, thereby improving semiconductor processing. The capacity of the device can further increase economic efficiency. The semiconductor processing apparatus provided by the present invention can realize the process time which can greatly reduce the process time under the premise of ensuring effective cooling of the wafer by using the reaction chamber provided by another technical solution of the present invention, thereby improving the productivity of the semiconductor processing apparatus, and further Improve economic efficiency.

In order to enable those skilled in the art to better understand the technical solutions of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings. FIG. 3a is a schematic structural view of a reaction chamber according to an embodiment of the present invention when loading and unloading a wafer; FIG. 3b is a partial schematic view showing a reaction chamber according to an embodiment of the present invention during a process; FIG. 4 is a diagram 3a and Schematic diagram of the support member in Fig. 3b. Referring to FIG. 3a, FIG. 3b and FIG. 4 together, the reaction chamber 20 provided in this embodiment includes a susceptor 21 for carrying the wafer S and a pressure ring 22 for fixing the wafer. Wherein, the base 21 is provided with a back blowing pipe 211 communicating with a back air source (not shown), and the upper surface of the base 21 is provided with an annular sealing device, and the base 21 can be raised and lowered: When the wafer S is unloaded, the susceptor 21 is in the loading and unloading position shown in FIG. 3a. During the process, the susceptor 21 is raised to the processing position (as shown in FIG. 3b) and the pressure ring 22 is lifted up. At this time, the pressure ring 22 is stacked. Pressed on the edge region of the wafer S, the annular sealing device is in contact with the back surface of the wafer S such that the upper surface of the susceptor 21 on the inner side of the annular sealing device forms a sealed space with the back surface of the wafer S, and the back blowing gas supplied from the back blowing gas source passes through the back blowing pipeline. The 211 is delivered into the sealed space, wherein the back-blowing gas includes an inert gas or a process gas to prevent the back-breathing gas from leaking into the reaction chamber to affect the process. As shown in FIG. 5, preferably, the back blowing pipe 211 has a plurality of output ports 214 provided on the upper surface of the base 21, and each of the output ports 214 is disposed near the center of the base 21 at the base. The upper surface of the 21 is provided with an annular groove 212 disposed along the circumferential direction thereof and a strip-shaped groove 213 corresponding to the output port 214. The annular groove 212 is located inside the annular sealing device, and each strip groove 213 Connected between the corresponding output port 214 and the annular groove 212, that is, both ends of each strip groove 213 communicate with the annular groove 212 and the corresponding output port 214, respectively. In this case, the back-blowing gas can be uniformly flowed on the back surface of the wafer S to a certain extent, so that the uniformity of the temperature of the wafer S can be improved, and the process quality can be improved. Further preferably, the plurality of output ports 214 are spaced and uniformly disposed along the circumference of the susceptor 21, which can further achieve uniform flow of the back-blowing gas on the back surface of the wafer S, so that the uniformity of the temperature of the wafer S can be further improved. It can be understood that since the susceptor 21 has a cooling function, in particular, a cooling duct is provided in the susceptor 21, and the susceptor 21 is cooled by the flow of the cooling medium in the cooling duct. In practical applications, the depths of the annular groove 212 and the strip groove 213 are set small, and the heat exchange efficiency between the susceptor 21, the back gas and the wafer S can be accelerated, so that the wafer S is rapidly cooled. . As shown in Fig. 6, in addition, preferably, the annular sealing means is provided as an annular corner 215 formed by cutting at an edge region of the upper surface of the base 21, and the annular corner 215 on the upper surface of the base 21 The inner and outer portions are lower than the annular corner 215. It can be said that the annular sealing device is a "sealing knife edge". Specifically, the annular groove 212 and the strip groove 213 are disposed on the upper surface of the base 21 inside the annular corner 215, and the annular groove 212 is disposed adjacent to the annular corner 215. It can be understood that the use of the above-mentioned susceptor 21 having a sealing blade can largely prevent the back-blowing gas from leaking into the reaction chamber 20, which can not only prevent the back-blowing gas from entering the reaction chamber 20 but affecting the reaction chamber 20. The pressure of the process (generally milliTorr), and also allows the pressure of the back gas to reach a few Torr, so that there is relatively more back gas between the wafer S and the susceptor 21, thereby improving heat transfer efficiency. In this embodiment, the pressure ring 22 is overlapped on the support member 23, that is, the pressure ring 22 and the support member 23 are connected in a movable manner, and are not fixedly connected. In this case, the base 21 can be freely attached to the third part. After the position shown in the figure rises to the position just in contact with the pressure ring 22, the drive base 21 is continuously raised until the pressure ring 22 is lifted. At this time, the pressure ring 22 is separated from the support member 23, and the pressure ring 22 is self-gravity. It is applied to the edge region of the wafer S, thereby pressing the wafer S to be fixed. In addition, the top wall 25 of the reaction chamber 20 is a dome structure made of a non-metal material such as quartz or glass, and an alternating electric field generated by the RF power source is coupled into the reaction chamber 20 via the top wall to implement the process. The gas is excited to form a plasma; an annular inner liner 26 of a cylindrical structure is sleeved inside the inner wall of the upper position of the reaction chamber 20, and the outer side wall of the base 21 is provided with a matching inner ring 26 and can be matched with Together, an annular outer liner 27 is formed that encloses the reaction space. As shown in FIG. 4, the support member 23 includes a support post 231, a support ring 232, and a plurality of support bars 233. Wherein, the inner diameter of the support ring 232 is larger than the diameter of the base 21, so that the base 21 is lifted and lowered relative to the pressure ring 22 in the ring hole of the support ring 232; the plurality of support rods 233 are disposed along the circumferential interval of the support ring 232. The support ring 232 is configured to support the pressure ring 22. Specifically, the annular outer liner 27 is provided with a plurality of first through holes respectively corresponding to the support rods 233, and each of the support rods 233 passes through the corresponding first After the through hole is engaged with the pressure ring 22, and the support rod 233 is in a clearance fit with the first through hole, so that the support rod 233 can be lifted and lowered relative to the first through hole in the first through hole; the support column 231 is used to support the support ring 232. Specifically, the lower end of the support post 231 is fixed to the bottom surface of the reaction chamber 20, and the upper end thereof is horizontally fixed to the support ring 232 by screws. Preferably, the plurality of support rods 233 are circumferentially spaced and uniformly disposed on the support ring 232 along the circumferential direction of the support ring 232, which can stably support the pressure ring 22, thereby ensuring process stability. Preferably, the lower surface of the pressure ring 22 is provided with a plurality of blind holes 221, and each blind hole 221 is disposed at a position of the lower surface of the pressure ring 22 in contact with the support rod 233; each blind hole 221 is used for each The top end of the support rod 233 corresponding thereto is accommodated as shown in Fig. 3b. It can be understood that the top end of the support rod 233 is located in the blind hole 221 corresponding thereto when loading and unloading the wafer S. The blind hole 221 can not only limit the support rod 233, thereby stably supporting the pressure ring 22; When the pressure ring 22 is lifted and lowered, it plays a guiding role, thereby ensuring that the pressure ring 22 is vertically raised and lowered. Further, in the present embodiment, the edge portion of the lower surface of the pressure ring 22 is provided with a convex portion 222, and the blind hole 221 is provided on the convex portion 222. When the pressure ring 22 is laminated on the edge region of the wafer S, the lower end surface of the convex portion 222 covers the first through hole on the annular outer liner 27 to prevent the etched pollutants from leaking through the first through hole during the process. Go into the chamber below the base 21. The protruding portion 222 may be not only an annular convex portion disposed along the circumferential direction of the pressure ring 22, but also covers the plurality of first passages by the lower end surface of the annular convex portion when the pressure ring 22 is laminated on the edge region of the wafer S The hole may further include a sub-protrusion corresponding to the first through hole, and when the pressing ring 22 is laminated on the edge region of the wafer S, the first end corresponding to the sub-protrusion is covered by the lower end surface of each of the sub-protrusions hole. The reaction chamber 20 further includes a thimble device including a plurality of thimbles 24 for carrying the wafer S, the top end of the thimble 24 being at the same height as the film opening 29 provided on the side wall of the pre-cleaning chamber (ie, the reaction chamber), The annular outer liner 27 is provided with a plurality of second through holes respectively corresponding to the thimbles 24, and when the wafer S is loaded and unloaded, the annular outer liner 27 descends with the base 21, and each of the thimbles 24 passes through the corresponding second a through hole, and a top end of the thimble 24 is higher than an upper surface of the base 21 and lower than a lower surface of the pressure ring 22, and the thimble 24 and the second through hole are clearance-fitted such that each thimble 24 is relatively movable in the second through hole The second through hole is lifted and lowered to realize the transfer of the wafer S between the ejector pin 24 and the susceptor 21. Preferably, the top end of each thimble 24 is provided with a step, and the lower step surface is for carrying the wafer S, and the vertical portion between the upper and lower step faces can also limit the wafer S to prevent the wafer S from being displaced in the horizontal direction. . Preferably, a plurality of thimbles 24 are circumferentially spaced apart on the support ring 232 along the support ring 232, and the top end of the thimble 24 is located below the pressure ring 22. It can be understood that the thimble 24 and the pressure ring 22 share one support member, so that the support members of the plurality of ejector pins 24 can be omitted, thereby not only simplifying the structure but also reducing the cost. Further preferably, the plurality of thimbles 24 are circumferentially spaced and uniformly disposed on the support ring 232 along the circumferential direction of the support ring 232, which makes it possible to stably support the wafer S, so that the falling of the sheet can be prevented. In addition, since the ejector pin 24 is used to carry the wafer S, the diameter of the circumference of the thimble 24 is smaller than the diameter of the wafer S, and the support rod 233 is used to support the pressure ring 22, and the outer diameter of the pressure ring 22 is not smaller than the diameter of the wafer S, The diameter of the circumference of the support rod 233 is larger than the diameter of the wafer S. Therefore, when the support ring 232 as shown in FIG. 4 is employed, a convex portion extending toward the center of the support ring 232 is provided on the inner side wall of the support ring 232, and the ejector pin 24 is disposed on the convex portion away from the support ring 232. One end such that the diameter of the circumference of the thimble 24 is smaller than the inner diameter of the support ring 232; the support rod 233 is disposed on the annulus of the support ring 232. The entire working procedure of the reaction chamber provided by this embodiment will be described in detail below with reference to Fig. 3a. Loading procedure: driving the base 21 to lower position by means of the lifting device, so that the upper surface of the base 21 and the annular surface of the lower surface of the pressure ring 22 are close to the annular hole, and the stepped surface of the thimble 24 is located. Between the susceptor 21 and the pressure ring, and the top end of the ejector pin 24 corresponds to the film opening 29, the robotic autoreceive film opening 29 carrying the wafer S is introduced into the reaction chamber 20, and the wafer S is transferred to the stepped surface of the ejector pin 24. Before the process: the base 21 is driven up by the lifting device, and the upper surface of the base 21 is first lifted by the wafer S during the ascending process, and then the upper surface of the wafer S and the upper surface of the pressure ring 22 are close to the annular area of the ring hole. After the contact, the susceptor 21 drives the wafer S and the pressure ring 22 to continue to rise to the process position, at which time the pressure ring 22 is laminated on the edge region of the wafer S. During the process: a certain amount of process gas is introduced into the reaction chamber, and the pressure in the chamber is guaranteed to be milliTorr. At this time, since the weight of the pressure ring 22 all acts on the edge region of the wafer S, the back pipe is passed through The 211 transports the back-blowing gas between the susceptor 21 and the wafer S without causing the wafer S having an excessive weight to be blown or blown, and a sealing space can be formed between the wafer S and the susceptor 21 by means of the sealing blade. Not only can the gas pressure of the backing gas reach a few Torr, the heat of the wafer S can be conducted to the susceptor 21 in time and taken away, and the back-breathing gas can be prevented from leaking to affect the process environment. Unloading procedure: First, the base 21 is lowered by means of the lifting device until the base 21 is lowered below the top end of the ejector pin 24, so that the wafer S is separated from the base 21 and located on the thimble 24; then, the idle robotic autorejectory opening 29 enters The reaction chamber 20 transfers the wafer S on the ejector pin 24 out of the reaction chamber 20, thereby unloading the wafer S on the susceptor 20. It should be noted that although the support member 23 is a structure as shown in FIG. 4 in the present embodiment, it includes a support post 231, a support ring 232, and a plurality of support bars 233; however, the present invention is not limited thereto. In practical applications, the support member 23 can also adopt other structures as long as the pressure ring 22 can be supported. It should be noted that, in this embodiment, the pressure ring 22 is overlapped on the support member 23, specifically, the pressure ring 22 is overlapped on the support rod 233 to press the wafer S by the gravity of the pressure ring 22; However, in practical applications, the pressure ring 22 can also be fixed to the support member 23, in particular, the pressure ring 22 is fixedly coupled to the support rod 233, in which case the pressure ring 22 can be contacted with the base 21 The relative movement is continued to press the wafer S by the gravity of the pressure ring 22 and the downward pulling force of the support rod 233. Preferably, in order to prevent the wafer S from being damaged by excessive pressure caused by such a hard connection, as shown in FIG. 7, the support member 23 serves as an inner liner of the reaction chamber 20, which is disposed around the inner peripheral wall of the reaction chamber 20. And having an annular groove 234 having an opening facing upward and surrounding the inner peripheral wall of the reaction chamber 20; the outer diameter of the pressure ring 22 is larger than the inner diameter of the annular groove 234, and the pressure ring 22 is overlapped within the annular groove 234 On the annular wall 235, the inner ring wall 235 refers to an annular wall forming an annular groove 235 near the center of the reaction chamber 20; and an elastic member 236 is disposed between the groove bottom of the annular groove 234 and the outer edge of the pressure ring 22 The elastic member 236 is stretched while the pressure ring 22 is laminated on the wafer S to apply a downward elastic force to the pressure ring 22. In the above case, the wafer S can be pressed by the gravity of the pressure ring 22 and the downward elastic force of the elastic member 236. Preferably, the lower surface of the pressure ring 22 is provided with an annular recess 223 which overlaps the inner ring wall 235 of the annular groove 234. It can be understood that the inner ring wall 235 of the annular groove 234 is restricted by the annular recess 223, so that the reliability of the support pressure ring 22 can be improved. Further, it should be noted that the wafer S is transferred between the ejector pin 24 and the susceptor 21 by causing both the ejector pin 24 and the susceptor 21 to move relatively up and down. It can be seen that, in the reaction chamber provided by the embodiment of the present invention, when the wafer S is loaded and unloaded, the susceptor 21 is away from the pressure ring 22 to perform the operation of loading and unloading the wafer S on the susceptor 21, thereby realizing the loading and unloading requirements of the process; During the process, the pressure ring 22 is laminated on the edge region of the wafer S to position the wafer S, and the annular sealing device is in contact with the back surface of the wafer S to form a seal between the upper surface of the susceptor 21 inside the annular sealing device and the back surface of the wafer S. Space, in this way, not only can the wafer S not be blown or blown by the back-blowing gas, but also the heat conduction effect between the wafer S and the susceptor 21 can be enhanced by increasing the back-blowing gas, and also by means of the annular sealing device Avoid blowing back gas and affecting the process environment. It can be seen that the reaction chamber 20 provided by the embodiment of the present invention can enhance the wafer S and the pedestal by increasing the back gas between the wafer S and the susceptor 21 during the process compared with the prior art reaction chamber. The heat conduction between the two, so that the wafer S can be cooled while the process is being performed, so that it is not necessary to periodically suspend the process and increase the cooling step during the process as in the prior art. Therefore, the reaction chamber provided by the embodiment of the present invention The chamber can greatly shorten the processing time and increase the production capacity of the semiconductor processing device under the premise of ensuring effective cooling of the wafer S, thereby improving economic efficiency. As another technical solution, the present invention also provides a semiconductor processing apparatus including a reaction chamber which can adopt the reaction chamber provided in the above embodiment, and the reaction chamber can be a pre-clean chamber. Specifically, the semiconductor processing apparatus may be a physical vapor deposition apparatus, a plasma etching apparatus, a chemical vapor deposition apparatus, or the like. The semiconductor processing apparatus provided by the embodiment of the present invention can greatly shorten the processing time and thereby increase the throughput of the semiconductor processing apparatus by using the reaction chamber provided by the above embodiments of the present invention, thereby ensuring effective cooling of the wafer. Improve economic efficiency. It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

10, 21‧‧‧ Pedestal
11, 24‧‧‧ thimble
12, 29‧‧‧ 传片口
20‧‧‧Reaction chamber
22‧‧‧ Pressure ring
23‧‧‧Support
25‧‧‧ top wall
26‧‧‧Ring lining
27‧‧‧Ring outer lining
211‧‧‧ Back blowing pipeline
212‧‧‧ annular groove
213‧‧‧ strip groove
214‧‧‧Outlet
215‧‧‧Circular corners
221‧‧ ‧ blind holes
222‧‧‧ convex
223‧‧‧ annular recess
231‧‧‧Support column
232‧‧‧Support ring
233‧‧‧Support rod
235‧‧‧ inner ring wall
234‧‧‧ annular groove
236‧‧‧Flexible parts
S‧‧‧ wafer

1a is a schematic structural view of a conventional pre-cleaning chamber in a transfer state; FIG. 1b is a partial schematic view showing a conventional pre-cleaning chamber in a process state; FIG. 2 is a perspective view showing a structure of a conventional ejector mechanism; The schematic diagram of the structure of the reaction chamber provided by the embodiment of the present invention when loading and unloading the wafer; FIG. 3b is a partial schematic view of the reaction chamber provided by the embodiment of the present invention during the process; FIG. 4 is a diagram of the 3a and 3b FIG. 5 is a plan view of a susceptor in a reaction chamber according to an embodiment of the present invention; and FIG. 6 is a partially enlarged view of a region I in FIG. 3b; A partial schematic view of a reaction chamber using another support provided by an embodiment of the invention.

20‧‧‧Reaction chamber

21‧‧‧Base

22‧‧‧ Pressure ring

24‧‧‧ thimble

25‧‧‧ top wall

26‧‧‧Ring lining

27‧‧‧Ring outer lining

29‧‧‧Transfer

211‧‧‧ Back blowing pipeline

222‧‧‧ convex

231‧‧‧Support column

232‧‧‧Support ring

233‧‧‧Support rod

S‧‧‧ wafer

Claims (10)

a reaction chamber, characterized in that a susceptor for carrying a wafer and a pressure ring for fixing the wafer are disposed in the reaction chamber; and a back blow line communicating with the back air source is disposed in the susceptor; The upper surface of the pedestal is provided with an annular sealing device; when the susceptor drives the wafer to the process position, the pressure ring is laminated on the edge region of the wafer, and the annular sealing device contacts the back surface of the wafer such that the inner side of the annular sealing device The upper surface of the pedestal forms a sealed space with the back surface of the wafer, and the back-blowing gas supplied from the back-blowing air source is delivered into the sealed space via the back-blowing line. The reaction chamber of claim 1, wherein the back-blowing line has a plurality of output ports disposed on an upper surface of the base, and each of the output ports is adjacent to the base a central position; an annular groove and a strip-shaped groove corresponding to the output port in a circumferential direction on the upper surface of the base, the annular groove being located inside the annular sealing device, each of the Both ends of the strip groove are respectively in communication with the annular groove and the corresponding output port. The reaction chamber of claim 1, wherein the annular sealing device is an annular corner formed by cutting at an edge region of the upper surface of the base, the upper surface of the base The portion inside and outside the annular corner is lower than the annular corner. The reaction chamber of claim 1, wherein the reaction chamber is further provided with a support member for supporting the pressure ring, the support member comprising a support column, a support ring and a plurality of support rods, wherein a plurality of the support rods are disposed on the support ring along the circumferential direction of the support ring for supporting the pressure ring; the inner diameter of the support ring is larger than the diameter of the base, and is disposed around the outer peripheral wall of the base The annular outer lining is provided with a plurality of first through holes respectively corresponding to the support rods, each of the support rods passing through the corresponding first through holes and cooperating with the pressure ring, and the support rod and the first The through hole is a clearance fit; the support column is for supporting the support ring. The reaction chamber of claim 4, wherein the lower surface of the pressure ring is provided with a plurality of blind holes, and each of the blind holes is disposed on the lower surface of the pressure ring and the support At positions where the rods are in contact; each of the blind holes is for receiving a top end of the support rod corresponding thereto. The reaction chamber of claim 5, wherein the edge region of the lower surface of the pressure ring is provided with a convex portion, the blind hole is disposed on the convex portion; when the pressure ring is laminated on the wafer The lower end surface of the convex portion covers the first through hole when the edge portion is in the edge region. The reaction chamber of claim 4, further comprising a plurality of thimbles for carrying the wafer; the annular outer liner is provided with a plurality of second through holes respectively corresponding to the thimbles When the wafer is loaded and unloaded, each of the thimbles passes through a corresponding second through hole, and a top end of the ejector pin is higher than an upper surface of the pedestal and lower than a lower surface of the pressure ring, the thimble and the second The through hole is a clearance fit. The reaction chamber of claim 7, wherein the plurality of thimbles are disposed on the support ring along a circumferential interval of the support ring. The reaction chamber of claim 1, wherein the support member serves as a lining of the reaction chamber, the support member is disposed around an inner peripheral wall of the reaction chamber, and the support member has an opening toward An annular groove disposed on the inner peripheral wall of the reaction chamber; the outer diameter of the pressure ring is larger than the inner diameter of the annular groove; the pressure ring is overlapped on the inner ring wall of the annular groove; An elastic portion is further disposed between the groove bottom of the groove and the outer edge of the pressure ring, and the elastic member is stretched when the pressure ring is laminated on the wafer to apply a downward elastic force to the pressure ring. A semiconductor processing apparatus comprising a reaction chamber, wherein the reaction chamber is the reaction chamber according to any one of claims 1 to 9.