CN108987237A - Reaction chamber and plasma apparatus - Google Patents
Reaction chamber and plasma apparatus Download PDFInfo
- Publication number
- CN108987237A CN108987237A CN201810864893.2A CN201810864893A CN108987237A CN 108987237 A CN108987237 A CN 108987237A CN 201810864893 A CN201810864893 A CN 201810864893A CN 108987237 A CN108987237 A CN 108987237A
- Authority
- CN
- China
- Prior art keywords
- liner
- reaction chamber
- lifting drive
- chamber
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The embodiment of the invention discloses a kind of reaction chamber and plasma apparatus, reaction chamber includes: chamber body, liner, support component and lifting drive；Liner includes: the first liner and the second liner；Second liner with outer shaft sleeve or it is interior be placed on lining in first, between the first liner and the second liner have gap, lifting drive for drive the second liner rise or fall；When carrying out process to wafer, the length of the lap of the first liner and the second liner is predetermined length, so that wafer is located in the process area surrounded by the first liner and the second liner.Reaction chamber and plasma apparatus of the invention; can in process treatment process by plasma confinement in certain process area; the inner wall of chamber body can be protected to be not etched simultaneously; improve the airflow homogeneity in technical process; it can guarantee technique long-time stable; so that crystal circle center is had preferable consistency to the etching result at edge, improves product yield.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of reaction chambers and plasma apparatus.
Background technique
Plasma apparatus is widely used in the manufacture crafts such as current semiconductor, solar battery, FPD.In mesh
It in preceding manufacturing process, has used there are many plasma apparatus types, such as capacitance coupling plasma, inductive coupling etc.
The types such as gas ions and Ecr plasma.It is heavy that the electric discharge of these types at present is widely used in physical vapor
Product, plasma etching and plasma activated chemical vapour deposition etc..
Fig. 1 is a kind of existing reaction cavity configuration for being commonly used in semiconductor dry etching equipment.Process gas passes through
Inlet channel 02 flows into inside reaction chamber 09, and the high-frequency energy that upper electrode radio-frequency antenna 01 generates penetrates medium window 03 for medium
The process gas of the lower section of window 03 is ionized into plasma 04, and plasma 04 is by way of physical bombardment or chemical reaction pair
Target area on wafer 06 performs etching.Plasma 04 is limited to certain area by the liner 05 inside reaction chamber 09, together
When 09 inner wall of reaction chamber can be protected to be not etched.The etch by-products that technical process generates are logical by the exhaust of 05 bottom of liner
Road 08 is discharged to pressure controller 010, is finally taken away by aspiration pump 011.Pass sheet mouth 015 on 05 side of liner is used for etching technics
Wafer 06 is spread out of after the completion of incoming wafer 06 and etching technics before starting.Before etching technics starts, inside door 013 drives in inside door
Decline under the action of device 012, gate valve 014 is opened, and wafer 06 is passed into reaction chamber, and then gate valve 014 is closed, including inside door 013
Rise under the action of gate driver 012, then starts etching technics.It is found by the applicant that there is following lack in existing reaction cavity configuration
Fall into: due to that cannot generate the design requirement and liner 05 of friction between relative movement part, the processing of inside door 013 and installation miss
Inevitably there is gap in difference, generally have 1-2mm between inside door 013 and liner 05,09 internal plasma of reaction chamber
Distribution can generate mutation inside door, and then influence the uniformity of etching result.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of reaction chamber and plasma apparatus, it can be at least partly
Solve the technical problems existing in the prior art.
According to an aspect of an embodiment of the present invention, a kind of reaction chamber is provided, comprising: chamber body, is used for branch at liner
Support the support component and lifting drive of wafer；The liner and the support component are arranged in the chamber body；Institute
Stating liner includes: the first liner and the second liner；First liner is fixedly connected with the chamber body, second liner
With outer shaft sleeve or it is interior be placed on lining in described first, between first liner and second liner have gap, it is described
Lifting drive is for driving second liner to rise or fall；Wherein, when carrying out process to wafer, the liter
Drop driving device drives second liner to decline and be located at preset first position, first liner and second liner
The length of lap be predetermined length, the wafer is located at the technique that is surrounded by first liner and second liner
In region.
Optionally, the lifting drive includes: telescopic lifter bellows；The lifter bellows and described the
The connection of two liners is gone up and down by the flexible driving of the lifter bellows second liner.
Optionally, the lifting drive includes: cylinder assembly；Wherein, the liter is driven by the cylinder assembly
It is flexible that bellows drops.
Optionally, the cylinder assembly includes: cylinder, connector and movable axis；The cylinder and the lifter bellows
Upper end connect with the chamber body；The bottom end of the lifter bellows and the work being arranged in the lifter bellows
Moving axis connection, for the cylinder axis of the cylinder by the connector and the activity axis connection, second liner passes through liner
Installation part is connect with the lifter bellows.
Optionally, the bottom of second liner is provided with multiple gas vents；Wherein, it is generated in the process area
Etch by-products be discharged by the gas vent.
Optionally, the chamber body is provided with pass sheet mouth；Wherein, in charging or feeding, the lifting drive
It drives second liner to rise and is located at the preset second position, second liner is made to be located at the top of the pass sheet mouth.
Optionally, the gap d=1m-2mm；The predetermined length and the ratio in the gap are greater than 7:1.
According to another aspect of the present invention, a kind of plasma apparatus, including reaction chamber are provided, which is characterized in that institute
Reaction chamber is stated using reaction chamber as described above.
Reaction chamber and plasma apparatus of the invention, can exist plasma confinement in process treatment process
In certain process area, while the inner wall of chamber body can be protected to be not etched, the air-flow improved in technical process is equal
Even property, can guarantee technique long-time stable, and crystal circle center is made to have preferable consistency to the etching result at edge, improve product
Yield.
The additional aspect of the embodiment of the present invention and advantage will be set forth in part in the description, these will be retouched from following
Become obvious in stating, or practice through the invention is recognized.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only
Some embodiments of the present invention, for those of ordinary skill in the art, without any creative labor, also
Other attached drawings can be obtained according to these attached drawings:
Fig. 1 is the structural schematic diagram of reaction chamber in the prior art；
Fig. 2 is the structural schematic diagram of second liner in low level of one embodiment of reaction chamber according to the present invention；
Fig. 3 is the partial enlargement diagram in the region a in Fig. 2；
Fig. 4 is second liner of one embodiment of reaction chamber according to the present invention in high-order structural schematic diagram.
Specific embodiment
With reference to the accompanying drawings to invention is more fully described, wherein illustrating exemplary embodiment of the present invention.Under
Face will combine the attached drawing in the embodiment of the present invention, and technical scheme in the embodiment of the invention is clearly and completely described, show
So, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.Various descriptions are carried out to technical solution of the present invention below with reference to figure and embodiment.
Hereafter in order to describe conveniently, hereinafter so-called "left", "right", "upper", "lower" and attached drawing itself it is left and right, upper,
Lower direction is consistent.
" first " hereinafter, " second " etc. are only used for distinguishing in description, and there is no other special meanings.
As shown in Fig. 2, the present invention provides a kind of reaction chamber, comprising: chamber body 11, is used to support wafer 17 at liner
Support component and lifting drive, liner and support component be arranged in chamber body 11.Liner includes the first liner 20
With the second liner 18, the first liner 20 is connect with chamber body 11, and the second liner 18 is with outer shaft sleeve or interior is placed on the first liner 20
On.In order to guarantee that second liner 18 does not scratch with the first liner 20 in the motion process of the second liner 18, in first
There is gap, lifting drive is for driving the second liner 18 to rise or fall between lining 20 and the second liner 18.
When carrying out process to wafer 17, lifting drive drives the second liner 18 to decline and is located at preset the
The length of the lap of one position, the first liner 20 and the second liner 18 is predetermined length, so that wafer 17 is located at by first
In the process area that liner and the second liner surround.First position and predetermined length can be by testing, debugging determination.Positioned at chamber
Plasma 19 can be limited in certain process area by the first liner 20 and the second liner 18 inside room ontology 11, together
When the inner wall of chamber body 11 can be protected to be not etched.
As shown in figure 3, the gap d between the first liner 20 and the second liner 18 can be d=1m-2mm.In order to guarantee work
During skill, plasma 19 will not escape into the first liner 20 by the gap between the first liner 20 and the second liner 18
The predetermined length H of the lap of outside, the first liner 20 and the second liner 18 meets H:d > 7:1.
In one embodiment, reaction chamber includes top electrode radio frequency electric wire 1 and medium window 3.Medium window 3 and chamber body
11 top connection, medium window 3 are located at the top of the first liner 20 and the second liner 18, and top electrode radio frequency electric wire 1 is located at medium
The top of window 3, medium window 3 are provided with inlet channel 2.When carrying out process to wafer 17, top electrode radio frequency electric wire 1 is used for
Gas into process area applies RF energy.Support component includes lower electrode 16, and wafer 17 is located at the top of lower electrode 16.
Process gas flows into the inside of chamber body 11, the high frequency that upper electrode radio-frequency antenna 1 generates by inlet channel 2
Energy through medium window 3 by the lower section of medium window 3, the process gas in process area be ionized into plasma 19, wait from
Daughter 19 performs etching the target area on wafer 17 by way of physical bombardment or chemical reaction.In the second liner 18
Bottom be provided with multiple gas vents 14, the etch by-products generated in process area in technical process pass through 14 row of gas vent
Out, it is discharged to pressure controller 12, is finally taken away by aspiration pump 13.
In one embodiment, lifting drive can there are many.For example, lifting drive includes telescopic liter
Bellows 8 drops.Lifter bellows 8 are connect with the second liner 18, pass through 18 liters of the second liner of flexible driving of lifter bellows 8
Drop.Lifting drive includes cylinder assembly, drives lifter bellows flexible by cylinder assembly.
Cylinder assembly includes cylinder 4, connector and movable axis.Connector can there are many, for example, cylinder axis connection spiral shell
Mother/floating junction 7 etc..Cylinder 4 is connect with the upper end of lifter bellows 8 with chamber body 11, the bottom end of lifter bellows 8 with set
The activity axis connection in lifter bellows 8 is set, the cylinder axis 6 of cylinder 4 passes through connector and activity axis connection.
Cylinder 4 is connected by cylinder connection piece 5 with chamber body 11, and the upper end of lifter bellows 8 can be solid by screw
Determine onto chamber body 11, the second liner 18 is connected to lifter bellows 8 by installation part 10.It during installation, can be by chamber
The back shroud 9 of 11 rear side of ontology is opened.Cylinder axis 6 passes through inside cylinder axis attaching nut/floating junction 7 and lifter bellows 8
Movable axis be connected, the movable axis inside lifter bellows 8 and 8 lower end of lifter bellows can be used the modes such as welding be connected or
It is integrally machined.Under the driving of cylinder 4, the movable axis inside lifter bellows 8 drives the second liner 18 to move up and down.
Chamber body 11 is provided with pass sheet mouth, and the opening and closing of pass sheet mouth are controlled by gate valve 15.As shown in figure 4,
When charging or feeding, lifting drive drives the second liner 18 to rise and is located at the preset second position, the second liner 18
In the top of pass sheet mouth, in order to be removed or placed into wafer 17 by pass sheet mouth.It the second position can be by testing, debugging really
It is fixed.Etching technics starts preceding second liner 18 and rises under the action of cylinder 4, and gate valve 15 is opened, and wafer 17 is passed into chamber sheet
After in body 11, gate valve 15 is closed, and the second liner 18 declines under the action of cylinder 4, starts etching technics.
In one embodiment, the present invention provides a kind of plasma apparatus, and plasma apparatus includes reaction chamber, instead
Answer chamber using the reaction chamber in embodiment as above.Plasma apparatus can be capacitance coupling plasma equipment, can also
To be inductively coupled plasma body equipment etc..
Reaction chamber and plasma apparatus provided by the above embodiment, can be in process treatment process by plasma
Body is limited in certain process area, while the inner wall of chamber body can be protected to be not etched, and is improved in technical process
Airflow homogeneity, can guarantee technique long-time stable, crystal circle center is made to have preferable consistency to the etching result at edge,
Improve product yield.
Any technical solution disclosed in aforementioned present invention unless otherwise stated, if it discloses numberical range,
Disclosed numberical range is preferred numberical range, and any it should be appreciated by those skilled in the art preferred numberical ranges
The only obvious or representative numerical value of technical effect in many enforceable numerical value.It, can not since numerical value is more
Exhaustion, so the present invention just discloses technical solution of the component values to illustrate the present invention, also, the above-mentioned numerical value enumerated is not
The limitation to the invention protection scope should be constituted.
Meanwhile if aforementioned present invention discloses or relates to the components or structural member of connection fastened to each other, except another
There is statement outer, is fixedly connected it is to be understood that connection (such as using bolt or screw connection) can be removedly fixed, it can also be with
Understand are as follows: non-removable to be fixedly connected with (such as riveting, welding), certainly, connection fastened to each other or integral structure
(such as manufacturing using casting technique is integrally formed) is replaced (obviously can not be using except integrally formed technique).
In addition, for indicating the art of positional relationship or shape applied in any technical solution disclosed in aforementioned present invention
Its meaning includes approximate with its, similar or close state or shape to language unless otherwise stated.Either component provided by the invention
Either being assembled by multiple individual component parts, or the separate part that integrally formed technique manufactures.
The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof；Although referring to preferred embodiment pair
The present invention is described in detail, it should be understood by those ordinary skilled in the art that: still can be to of the invention specific
Embodiment is modified or some technical features can be equivalently replaced；Without departing from the spirit of the technical scheme of the invention,
It should all cover within the scope of the technical scheme claimed by the invention.
Description of the invention is given for the purpose of illustration and description, and is not exhaustively or will be of the invention
It is limited to disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.It selects and retouches
It states embodiment and is to more preferably illustrate the principle of the present invention and practical application, and those skilled in the art is enable to manage
The solution present invention is to design various embodiments suitable for specific applications with various modifications.
Claims (8)
1. a kind of reaction chamber characterized by comprising
Chamber body, liner, the support component and lifting drive for being used to support wafer；The liner and the support component
It is arranged in the chamber body；The liner includes: the first liner and the second liner；First liner and the chamber sheet
Body is fixedly connected, second liner with outer shaft sleeve or it is interior be placed on lining in described first, in first liner and described the
There is gap, the lifting drive is for driving second liner to rise or fall between two liners；Wherein, to crystalline substance
When circle carries out process, the lifting drive drives second liner to decline and be located at preset first position, institute
The length for stating the lap of the first liner and second liner is predetermined length, and the wafer is located at by first liner
In the process area surrounded with second liner.
2. reaction chamber as described in claim 1, which is characterized in that
The lifting drive includes: telescopic lifter bellows；The lifter bellows are connect with second liner,
Pass through the flexible driving of the lifter bellows the second liner lifting.
3. reaction chamber as claimed in claim 2, which is characterized in that
The lifting drive includes: cylinder assembly；Wherein, the lifter bellows are driven to stretch by the cylinder assembly
Contracting.
4. reaction chamber as claimed in claim 3, which is characterized in that
The cylinder assembly includes: cylinder, connector and movable axis；The upper end of the cylinder and the lifter bellows with it is described
Chamber body connection；The bottom end of the lifter bellows and the activity axis connection being arranged in the lifter bellows, institute
The cylinder axis of cylinder is stated by the connector and the activity axis connection, second liner by liner installation part with it is described
Lifter bellows connection.
5. reaction chamber as described in claim 1, which is characterized in that
The bottom of second liner is provided with multiple gas vents；Wherein, the etching by-product generated in the process area
Object is discharged by the gas vent.
6. reaction chamber as described in claim 1, which is characterized in that
The chamber body is provided with pass sheet mouth；Wherein, in charging or feeding, the lifting drive driving described second
Liner rises and is located at the preset second position, and second liner is made to be located at the top of the pass sheet mouth.
7. reaction chamber as described in claim 1, which is characterized in that
Gap d=the 1mm-2mm；The predetermined length and the ratio in the gap are greater than 7:1.
8. a kind of plasma apparatus, including reaction chamber, which is characterized in that the reaction chamber uses such as claim 1 to 7
Described in any item reaction chambers.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810864893.2A CN108987237B (en) | 2018-08-01 | Reaction chamber and plasma equipment | |
| TW107146146A TWI694515B (en) | 2018-08-01 | 2018-12-20 | Reaction chamber and plasma equipment |
| JP2021505350A JP7093464B2 (en) | 2018-08-01 | 2019-07-24 | Reaction chamber and plasma equipment |
| PCT/CN2019/097547 WO2020024859A1 (en) | 2018-08-01 | 2019-07-24 | Reaction chamber and plasma device |
| US17/258,706 US11715627B2 (en) | 2018-08-01 | 2019-07-24 | Reaction chamber and plasma apparatus |
| KR1020217000668A KR102469302B1 (en) | 2018-08-01 | 2019-07-24 | Reaction chamber and plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810864893.2A CN108987237B (en) | 2018-08-01 | Reaction chamber and plasma equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108987237A true CN108987237A (en) | 2018-12-11 |
| CN108987237B CN108987237B (en) | 2024-06-21 |
Family
ID=
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473814A (en) * | 2019-09-03 | 2019-11-19 | 北京北方华创微电子装备有限公司 | Inner lining structure, reaction chamber and semiconductor processing equipment |
| WO2020024859A1 (en) * | 2018-08-01 | 2020-02-06 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma device |
| CN111370288A (en) * | 2020-04-16 | 2020-07-03 | 上海稷以科技有限公司 | Multilayer lining wall plasma processing device and working method thereof |
| CN111383888A (en) * | 2018-12-27 | 2020-07-07 | 江苏鲁汶仪器有限公司 | Plasma etching machine |
| CN111725111A (en) * | 2020-06-24 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Reaction chamber of semiconductor processing equipment and semiconductor processing equipment |
| CN111725106A (en) * | 2020-06-22 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN112509901A (en) * | 2020-11-19 | 2021-03-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| CN112687513A (en) * | 2020-12-25 | 2021-04-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber |
| CN113707523A (en) * | 2021-08-30 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN116259563A (en) * | 2022-12-25 | 2023-06-13 | 北京屹唐半导体科技股份有限公司 | Reaction chamber and wafer etching device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016180007A1 (en) * | 2015-05-14 | 2016-11-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing apparatus |
| CN106971932A (en) * | 2016-01-13 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of reaction chamber and semiconductor equipment |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| KR20180047236A (en) * | 2016-10-31 | 2018-05-10 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN208478281U (en) * | 2018-08-01 | 2019-02-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma apparatus |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016180007A1 (en) * | 2015-05-14 | 2016-11-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing apparatus |
| CN106298417A (en) * | 2015-05-14 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN106971932A (en) * | 2016-01-13 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of reaction chamber and semiconductor equipment |
| KR20180047236A (en) * | 2016-10-31 | 2018-05-10 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| CN208478281U (en) * | 2018-08-01 | 2019-02-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma apparatus |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11715627B2 (en) | 2018-08-01 | 2023-08-01 | Beijing Naura Microelectronics Equipment Co., Ltd. | Reaction chamber and plasma apparatus |
| WO2020024859A1 (en) * | 2018-08-01 | 2020-02-06 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma device |
| CN111383888A (en) * | 2018-12-27 | 2020-07-07 | 江苏鲁汶仪器有限公司 | Plasma etching machine |
| CN110473814A (en) * | 2019-09-03 | 2019-11-19 | 北京北方华创微电子装备有限公司 | Inner lining structure, reaction chamber and semiconductor processing equipment |
| CN111370288A (en) * | 2020-04-16 | 2020-07-03 | 上海稷以科技有限公司 | Multilayer lining wall plasma processing device and working method thereof |
| CN111725106A (en) * | 2020-06-22 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN111725106B (en) * | 2020-06-22 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
| CN111725111A (en) * | 2020-06-24 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Reaction chamber of semiconductor processing equipment and semiconductor processing equipment |
| CN112509901B (en) * | 2020-11-19 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| CN112509901A (en) * | 2020-11-19 | 2021-03-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| CN112687513A (en) * | 2020-12-25 | 2021-04-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber |
| CN112687513B (en) * | 2020-12-25 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber |
| CN113707523A (en) * | 2021-08-30 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN113707523B (en) * | 2021-08-30 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN116259563A (en) * | 2022-12-25 | 2023-06-13 | 北京屹唐半导体科技股份有限公司 | Reaction chamber and wafer etching device |
| CN116259563B (en) * | 2022-12-25 | 2024-01-23 | 北京屹唐半导体科技股份有限公司 | Reaction chamber and wafer etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202008456A (en) | 2020-02-16 |
| TWI694515B (en) | 2020-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208478281U (en) | Reaction chamber and plasma apparatus | |
| US11574831B2 (en) | Method and apparatus for substrate transfer and radical confinement | |
| CN102142357B (en) | Plasma processing apparatus | |
| US20110284166A1 (en) | Lower liner with integrated flow equalizer and improved conductance | |
| KR101406676B1 (en) | Inductively coupled plasma processing apparatus | |
| JP6581602B2 (en) | In-line DPS chamber hardware design that allows axial symmetry for improved flow conductance and uniformity | |
| KR20100128285A (en) | Etching chamber having flow equalizer and lower liner | |
| CN101202206A (en) | Reaction chamber inner lining and reaction chamber containing the inner lining | |
| KR102331286B1 (en) | Particle backflow prevention member and substrate processing apparatus | |
| US20140272211A1 (en) | Apparatus and methods for reducing particles in semiconductor process chambers | |
| CN111725106B (en) | Semiconductor process equipment and process chamber thereof | |
| CN106328473A (en) | Plasma processing apparatus and exhaust structure thereof | |
| CN104538334B (en) | A kind of multi-functional plasma chamber processing system | |
| WO2011005620A2 (en) | Tunable gas flow equalizer | |
| CN109994356B (en) | Reaction chamber and semiconductor processing equipment | |
| TW201922061A (en) | Plasma processing apparatus | |
| CN108987237A (en) | Reaction chamber and plasma apparatus | |
| US20190043698A1 (en) | Electrostatic shield for substrate support | |
| KR101477292B1 (en) | Substrate Processing Apparatus | |
| US11715627B2 (en) | Reaction chamber and plasma apparatus | |
| CN108987237B (en) | Reaction chamber and plasma equipment | |
| CN104658845B (en) | Plasma processing apparatus and its isolating device | |
| CN111105976A (en) | Semiconductor equipment reaction chamber | |
| CN220545182U (en) | Plasma cavity assembly and plasma equipment | |
| CN111120266B (en) | Exhaust structure of compressor and compressor with same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |