CN111105976A - Semiconductor equipment reaction chamber - Google Patents
Semiconductor equipment reaction chamber Download PDFInfo
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- CN111105976A CN111105976A CN201911346492.9A CN201911346492A CN111105976A CN 111105976 A CN111105976 A CN 111105976A CN 201911346492 A CN201911346492 A CN 201911346492A CN 111105976 A CN111105976 A CN 111105976A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a reaction chamber of semiconductor equipment. The semiconductor device reaction chamber includes: a body chamber and a pumping chamber; the inner space of the main body cavity is divided into an air inlet cavity and an air outlet cavity by the lining; the air inlet cavity and the air outlet cavity are cylindrical cavities respectively, and the inner diameter of the air outlet cavity is larger than that of the air inlet cavity; the lower electrode is arranged in the air outlet cavity, part of the lower electrode extends into the air inlet cavity, and the lining is arranged around the lower electrode; the lining is provided with a plurality of vent holes; the sum of the areas of the plurality of vent holes is the vent area of the lining; the gas pumping cavity is connected with the gas outlet cavity and used for pumping out the process gas in the main body cavity. When the plasma process is performed by using the reaction chamber, the process is more uniform.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a reaction chamber of semiconductor equipment.
Background
One process commonly found in semiconductor processing is plasma processing. A typical plasma processing process chamber is shown in fig. 1, with a lower electrode disposed in the process chamber, and a liner disposed in the process chamber.
The process chamber is divided into an air inlet cavity and an air outlet cavity by the lining, the lower electrode is arranged in the air outlet cavity and penetrates through the annular hole of the lining, so that the bearing surface of the lower electrode is positioned in the air inlet cavity.
When the plasma process is executed, the wafer is arranged on the bearing surface of the lower electrode, process gas is introduced into the gas inlet cavity and is subjected to plasma reaction, and byproducts generated in the process are pumped into and out of the gas cavity through the vent holes in the lining and are finally discharged out of the process cavity through the air pumping device.
However, the process uniformity is not high in the current plasma process. Therefore, how to improve the uniformity of the plasma process is an urgent technical problem to be solved in the field.
Disclosure of Invention
The invention aims to provide a reaction chamber of semiconductor equipment, which can improve the reaction uniformity when the semiconductor equipment is used for carrying out a plasma process.
In order to achieve the above object, as one aspect of the present invention, there is provided a semiconductor device reaction chamber, comprising: a body chamber and a pumping chamber; a lining is arranged in the main body cavity and divides the inner space of the main body cavity into an air inlet cavity and an air outlet cavity; the air inlet cavity and the air outlet cavity are cylindrical cavities respectively, and the inner diameter of the air outlet cavity is larger than that of the air inlet cavity; the lower electrode is arranged in the air outlet cavity, part of the lower electrode extends into the air inlet cavity, and the lining is arranged around the lower electrode; a plurality of vent holes are formed in the inner liner; the sum of the areas of the plurality of vent holes is the vent area of the liner; the gas pumping cavity is connected with the gas outlet cavity and used for pumping out the process gas in the main body cavity.
Preferably, the air outlet cavity comprises a main air outlet cavity and a transition cavity, the transition cavity is connected between the air inlet cavity and the main air outlet cavity, and the inner diameter of the transition cavity gradually increases in the direction from the air inlet cavity to the air outlet cavity; the side walls of the transition cavity are inclined outwardly.
Preferably, the included angle between the inner wall of the transition chamber and the inner wall of the air inlet chamber is between 45 ° and 60 °.
Preferably, the inner wall of the air inlet cavity is a cylindrical surface, the inner wall of the main air outlet cavity is a cylindrical surface, and the inner diameter of the air inlet cavity is 20mm to 30mm smaller than the inner diameter of the main air outlet cavity.
Preferably, the suction chamber is connected to the main outlet chamber, and a top wall of the suction chamber is aligned with a bottom of the transition chamber.
Preferably, the liner comprises a liner floor and liner sidewalls; the lining side wall is arranged on the lining bottom plate and is fixedly connected with the lining bottom plate; the vent hole comprises a bottom plate vent hole formed in the lining bottom plate and a side wall vent hole formed in the side wall.
Preferably, the porosity on the liner is between 60% and 80%.
Preferably, the size of the side wall vent holes in the height direction of the side wall of the liner is between 20mm and 25 mm.
Preferably, the included angle between the lining bottom plate and the lining side wall is an obtuse angle, and the included angle has a value of 120-135 °.
Preferably, the air pumping chamber is provided with an air pumping port for communicating with an air pumping device; the bottom wall of the gas outlet cavity comprises a lower electrode mounting area and an annular area surrounding the lower electrode mounting area; the ventilation area of the air pumping opening is larger than or equal to that of the annular area, and the ventilation area of the annular area is larger than or equal to that of the lining.
When the plasma process is executed in the reaction cavity, the inner diameter of the gas outlet cavity is larger than that of the gas inlet cavity, so that when the plasma enters the gas outlet cavity from the gas inlet cavity under the action of the suction force of the gas pumping device, the gas flow resistance is reduced, vortex flow cannot be generated in the main body cavity, the plasma can be uniformly distributed above and around the wafer, and the uniformity of the plasma process is improved. In addition, after the flow resistance of the gas is reduced, the pressure control capacity is enhanced, and the efficiency of the plasma process is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a process chamber in the related art;
FIG. 2 is a top view of a liner for the process chamber shown in FIG. 1;
FIG. 3 is a front cross-sectional view of FIG. 2;
FIG. 4 is a schematic view of one embodiment of a reaction chamber provided by the present invention;
FIG. 5 is a schematic view of another embodiment of a reaction chamber provided by the present invention;
FIG. 6 is a schematic main sectional view of a liner used in a reaction chamber provided by the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As a result of repeated research by the present inventors, it was found that when the plasma process is performed using the process chamber shown in fig. 1, one of the reasons for process non-uniformity is as follows:
the diameters of the gas inlet cavity 110 and the gas outlet cavity 120 in the process cavity are the same, the flow direction of process gas molecules is consistent under the action of suction force of the gas pumping device, when the process gas molecules flow to the surface of a wafer, the flow resistance of the gas is increased, and vortex is easily generated, so that the process gas is unevenly distributed above the wafer, and the uniformity of the process is further influenced.
In view of this, as an aspect of the present invention, there is provided a reaction chamber for plasma processing, as shown in fig. 4, the reaction chamber includes a main chamber 100 and an exhaust chamber 200, the main chamber 100 includes a gas inlet cavity 110 and a gas outlet cavity 120 coaxially disposed, the gas inlet cavity 110 and the gas outlet cavity 120 are respectively cylindrical cavities, and an inner diameter of the gas outlet cavity 110 is greater than an inner diameter of the gas inlet cavity 120; the air pumping chamber 200 is communicated with the air outlet chamber 120, and the air outlet chamber 120 is used for arranging a lower electrode. Wherein the cross-sectional area of the outlet chamber 120 is larger than the cross-sectional area of the inlet chamber 110 due to the difference in diameter between the two.
As shown in fig. 5, the reaction chamber further includes a lower electrode 400 and a liner 300, and both the lower electrode 400 and the liner 300 are disposed in the main chamber 100. The inner liner bottom plate of the liner 300 divides the inner space of the main body chamber 100 into the air inlet cavity 110 and the air outlet cavity 120, and a plurality of vent holes are formed on the inner liner bottom plate, and the sum of the areas of the vent holes is the vent area of the liner 300; a portion of the lower electrode 400 is positioned in the exit plenum 120 and another portion of the lower electrode 400 passes through the bottom lining panel into the inlet plenum 110, with the bearing surface of the lower electrode 400 positioned in the inlet plenum 110. In order to perform the plasma process, it is necessary to connect the pumping port of the pumping chamber 120 to a pumping device.
When performing a plasma process, a wafer is disposed on the carrying surface of the lower electrode 400, and a process gas is introduced into the gas inlet chamber 110 to plasmize the process gas. The interior of the body chamber 100 is pumped through the pumping chamber 120 using a pumping device.
Because the cross-sectional area of the gas outlet cavity 120 is larger than the cross-sectional area of the gas inlet cavity 110, when the plasma enters the gas outlet cavity 120 from the gas inlet cavity 110 under the action of the suction force of the gas extraction device, the flow resistance of the gas is reduced, so that a vortex cannot be generated in the main body cavity, the plasma can be uniformly distributed above and around the wafer, and the uniformity of the plasma process is improved. In addition, after the flow resistance of the gas is reduced, the pressure control capacity is enhanced, and the efficiency of the plasma process is improved.
In the present invention, the specific structure of the outlet chamber 120 is not particularly limited as long as the cross-sectional area of the outlet chamber 120 is larger than the ventilation area of the inlet chamber 110. In order to further avoid the generation of the vortex flow of the gas in the main chamber and ensure the more uniform gas flow in the plasma process, preferably, as shown in fig. 4, the gas outlet cavity 120 comprises a main gas outlet cavity 121 and a transition cavity 122, the transition cavity 122 is connected between the gas inlet cavity 110 and the main gas outlet cavity 121, and the inner diameter of the transition cavity 122 gradually increases in the direction from the gas inlet cavity 110 to the gas outlet cavity 120 (the up-down direction in fig. 4); the side wall of the transition cavity is formed into an outward inclined boss, namely the whole side wall of the transition cavity can be in a frustum structure.
Through setting up transition chamber 122, can avoid different cavity inner walls department to have the right angle to can avoid gaseous vortex that produces in the main part cavity.
In a preferred embodiment, as shown in FIG. 4, the angle α between the inner wall of the transition chamber 122 and the inner wall of the inlet chamber 110 is between 45 and 60.
In order to make the flow of the process gas more uniform, it is preferable that the inner wall of the gas inlet chamber 110 is a cylindrical surface, the inner wall of the main gas outlet chamber 122 is a cylindrical surface, and the inner diameter of the gas inlet chamber 110 is 20mm to 30mm smaller than the inner diameter of the main gas outlet chamber 121. As an alternative embodiment, the inner diameter of the inlet plenum 110 may be 370mm and the inner diameter of the main outlet plenum may be between 390mm and 400 mm.
The inner diameter of the gas outlet chamber 121 is only 20mm to 30mm larger than that of the gas inlet chamber 110, and although the gas flow resistance is reduced, the gas flow resistance is not reduced so much that the uniformity of the plasma process can be ensured and the pressure control capability is not affected.
In order to avoid the generation of the vortex of the gas in the main chamber and ensure the more uniform gas flow during the plasma process, preferably, as shown in fig. 4, the pumping chamber 200 is connected to the main gas outlet cavity 121, and the top wall of the pumping chamber 200 may form an angle of 135 ° to 150 ° with the side wall of the transition cavity 122, that is, the top wall of the pumping chamber 200 may be located between the main gas outlet cavity 121 and the transition cavity 122, and at this time, the top wall of the over-pumping chamber 200 may form an angle with the side wall of the transition cavity 122, so that the right angle at the inner wall of different chambers may be avoided, and the generation of the vortex of the gas in the main chamber may be avoided.
It should be noted that the lower chamber is designed with an oblique angle at the position connected with the lining, and the oblique angle is 45-60 degrees. The position of the rear air exhaust cavity close to the lining is also designed with an oblique angle, and the size of the oblique angle is 45-60 degrees. The present case has further injectd the concrete position of taking out the air cavity and the oblique angle that forms between the transition chamber, and two oblique angles are two contained angles that form between transition chamber and the different cavity really, the oblique angle that forms between this application transition intracavity wall and the air intake chamber inner wall promptly to and the oblique angle that forms between transition chamber and the extraction chamber roof wall.
In the present invention, there is no particular limitation on how the process gas is introduced into the gas inlet chamber. In the embodiment shown in fig. 4, the body chamber further includes a cover plate 600 for closing the air intake chamber 110, and the cover plate 600 is provided with an air intake hole 610 to introduce the air intake hole 610 into the air intake chamber 110.
As described above, since the cross-sectional area of the gas outlet chamber 120 is larger than that of the gas inlet chamber, the gas flow resistance is small during the plasma process, so that the generation of gas vortex can be reduced or even avoided, and the uniformity of the plasma process can be improved.
In the present invention, the specific structure of the liner 300 is not particularly limited. The liner 300 may have the structure shown in fig. 2 and 3. Specifically, the liner 300 includes a liner side wall 310 and a liner bottom plate 320, the liner bottom plate 320 is an annular plate, the liner side wall 310 is disposed around the liner bottom plate 320, and the liner bottom plate 320 is fixedly connected to the liner side wall 310. A plurality of the vent holes 300a are formed on the inner substrate plate 320. The liner sidewall 310 is disposed opposite the inner surface of the air intake cavity to protect the inner wall of the air intake cavity when the liner 300 is installed in the body cavity. The lower electrode passes through the lining bottom plate 320, so that the bearing surface of the lower electrode is positioned in the air inlet cavity.
As shown in fig. 2, the plurality of ventilation holes 300a on the liner bottom plate 320 are uniformly distributed, and gas can pass through the ventilation holes 300.
In order to effectively reduce the air flow resistance, it is preferable that the vent holes 300a include a bottom vent hole opened on the underwear bottom plate 320 and a side wall vent hole opened on the inner liner side wall 310, the bottom vent hole and the side wall vent hole together constituting the vent hole 300a, that is, the vent hole 300a is substantially "L" shaped; alternatively, the liner sidewall 31 and the liner bottom plate 320 may be respectively provided with a vent hole 300.
To ensure that gas can flow uniformly and smoothly from the inlet chamber 110 to the outlet chamber 120, the porosity of the liner 300 is preferably between 60% and 80%.
In a preferred embodiment, the size of the sidewall vents 3 in the height direction of the liner sidewall 310 is between 20mm and 25 mm.
In the embodiment shown in FIG. 3, the liner side walls 310 are perpendicular to the liner floor 320. to avoid gas turbulence, the angle β between the liner floor 320 and the liner side walls 310 is preferably obtuse.
Preferably, the included angle β between the liner floor and the liner sidewall has a value between 120 ° and 135 °.
In order to facilitate the installation of the air extractor, the air extracting chamber 200 is provided with an air extracting port 500 for communicating with the air extractor.
To provide the lower electrode, the bottom wall of the outlet chamber 120 includes a lower electrode mounting region in which the lower electrode is mounted and an annular region surrounding the lower electrode mounting region. In order to ensure that the gas can be pumped out, the ventilation area of the pumping hole is preferably larger than or equal to that of the annular area, and the ventilation area of the annular area is larger than or equal to that of the lining, so that the flow rate of the plasma in the body cavity can be increased by adopting the design, and the etching rate of the plasma is greatly increased.
To facilitate securing the liner 300 within the body cavity, the liner 300 may also preferably include a mounting flange 340 disposed around the top end of the liner sidewall 310.
In order to maintain the stability of the liner 300, it is preferable that the liner 300 further includes a stopper wall 330 disposed at the inner edge of the inner substrate plate 320, the stopper wall 330 extending in the same direction as the liner sidewall 310, the stopper wall 330 being disposed around the lower electrode.
Preferably, the reaction chamber may further comprise a gas exhaust device disposed at the gas exhaust port.
In the present invention, the air-extracting device is not particularly limited, and preferably, the air-extracting device may be a swing valve molecular pump.
The process of etching silicon carbide may be performed using the reaction chamber.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A semiconductor device reaction chamber, comprising: a body chamber and a pumping chamber;
a lining is arranged in the main body cavity and divides the inner space of the main body cavity into an air inlet cavity and an air outlet cavity;
the air inlet cavity and the air outlet cavity are cylindrical cavities respectively, and the inner diameter of the air outlet cavity is larger than that of the air inlet cavity;
the lower electrode is arranged in the air outlet cavity, part of the lower electrode extends into the air inlet cavity, and the lining is arranged around the lower electrode;
a plurality of vent holes are formed in the inner liner; the sum of the areas of the plurality of vent holes is the vent area of the liner;
the gas pumping cavity is connected with the gas outlet cavity and used for pumping out the process gas in the main body cavity.
2. The semiconductor device reaction chamber of claim 1, wherein the exit gas cavity comprises a main exit gas cavity and a transition cavity connected between the inlet gas cavity and the main exit gas cavity, the transition cavity having an inner diameter that gradually increases in a direction from the inlet gas cavity to the exit gas cavity; the side walls of the transition cavity are inclined outwardly.
3. The semiconductor device reaction chamber of claim 2, wherein an angle between an inner wall of the transition chamber and an inner wall of the gas inlet chamber is between 45 ° and 60 °.
4. The semiconductor device reaction chamber of claim 2, wherein the inner wall of the inlet chamber is cylindrical and the inner wall of the primary outlet chamber is cylindrical, and the inner diameter of the inlet chamber is 20mm to 30mm smaller than the inner diameter of the primary outlet chamber.
5. The semiconductor device reaction chamber of claim 2, wherein the pumping chamber is connected to the main gas outlet cavity and the top wall of the pumping chamber and the side wall of the transition cavity are angled at between 135 ° and 150 °.
6. The semiconductor equipment reaction chamber of claim 1, wherein the liner comprises a liner floor and liner sidewalls; the lining side wall is arranged on the lining bottom plate and is fixedly connected with the lining bottom plate;
the vent hole comprises a bottom plate vent hole formed in the lining bottom plate and a side wall vent hole formed in the side wall.
7. The semiconductor device reaction chamber of claim 6, wherein the porosity on the liner is between 60% and 80%.
8. The semiconductor device reaction chamber of claim 7, wherein the sidewall vent hole has a dimension along a height of the liner sidewall of between 20mm and 25 mm.
9. The semiconductor equipment reaction chamber of claim 7, wherein an angle between the liner floor and the liner sidewall is obtuse and has a value between 120 ° and 135 °.
10. The semiconductor equipment reaction chamber according to any one of claims 1 to 9, wherein the gas pumping chamber is provided with a pumping port for communicating with a pumping device; the bottom wall of the gas outlet cavity comprises a lower electrode mounting area and an annular area surrounding the lower electrode mounting area; the ventilation area of the air pumping opening is larger than or equal to that of the annular area, and the ventilation area of the annular area is larger than or equal to that of the lining.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911346492.9A CN111105976B (en) | 2019-12-24 | 2019-12-24 | Semiconductor equipment reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911346492.9A CN111105976B (en) | 2019-12-24 | 2019-12-24 | Semiconductor equipment reaction chamber |
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| CN111105976A true CN111105976A (en) | 2020-05-05 |
| CN111105976B CN111105976B (en) | 2022-11-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114657643A (en) * | 2020-12-24 | 2022-06-24 | 中国科学院微电子研究所 | Wafer processing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6673196B1 (en) * | 1999-09-02 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus |
| CN1848376A (en) * | 2005-12-26 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing system reaction chamber |
| US20110006038A1 (en) * | 2009-07-13 | 2011-01-13 | Michael Charles Kutney | Plasma processing chamber with enhanced gas delivery |
| CN101990789A (en) * | 2008-04-07 | 2011-03-23 | 应用材料公司 | Lower liner with integrated flow equalizer and improved conductance |
| CN108878248A (en) * | 2017-05-16 | 2018-11-23 | 东京毅力科创株式会社 | Plasma processing apparatus |
-
2019
- 2019-12-24 CN CN201911346492.9A patent/CN111105976B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6673196B1 (en) * | 1999-09-02 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus |
| CN1848376A (en) * | 2005-12-26 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing system reaction chamber |
| CN101990789A (en) * | 2008-04-07 | 2011-03-23 | 应用材料公司 | Lower liner with integrated flow equalizer and improved conductance |
| US20110006038A1 (en) * | 2009-07-13 | 2011-01-13 | Michael Charles Kutney | Plasma processing chamber with enhanced gas delivery |
| CN108878248A (en) * | 2017-05-16 | 2018-11-23 | 东京毅力科创株式会社 | Plasma processing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114657643A (en) * | 2020-12-24 | 2022-06-24 | 中国科学院微电子研究所 | Wafer processing apparatus |
| CN114657643B (en) * | 2020-12-24 | 2023-10-03 | 中国科学院微电子研究所 | Wafer processing apparatus |
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