CN1848376A - Semiconductor processing system reaction chamber - Google Patents
Semiconductor processing system reaction chamber Download PDFInfo
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- CN1848376A CN1848376A CN 200510130734 CN200510130734A CN1848376A CN 1848376 A CN1848376 A CN 1848376A CN 200510130734 CN200510130734 CN 200510130734 CN 200510130734 A CN200510130734 A CN 200510130734A CN 1848376 A CN1848376 A CN 1848376A
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Abstract
The present invention relates to a reaction cavity chamber of semiconductor processing system. Said reaction cavity chamber includes a closed space composed of window body and cavity chamber wall, on the cavity chamber wall a side gas inlet can be set, also a central gas inlet can be set on the window body or a side gas inlet and a central gas inlet can be simultaneously set, lower portion of said cavity chamber wall is communicated with a gas outlet, inside of said cavity chamber wall is equipped with an inside lining, the internal bottom side of said cavity chamber wall has a bottom lining, inside of inside lining has an inner layer inside lining, between the inside lining and inner layer inside lining a certain distance is retained so as to form gas flow space, on the wall of inner layer inside lining several gas holes are set, the closed space is communicated with gas inlet, the gas flow space is communicated with the gas outlet. Said structure can raise uniformity of plasma in cavity chamber interior.
Description
Technical field
The present invention relates to the reative cell in a kind of semiconductor machining system, particularly be provided with the reative cell of multilayer liner.
Background technology
Semiconductor machining comprises the deposition processes that the chemical vapor deposition (CVD) of metal, dielectric and semi-conducting material is such, the etching of these layers, polishing of photoresist mask layer or the like.In the situation of etching, plasma etching is generally used for etching metal, dielectric and semi-conducting material.The plasma reactor of parallel plate type typically comprises the air chamber that contains one or more baffle plate, allow the top electrode of etching gas by it, silicon wafer is supported on the support of bottom electrode radio frequency (RF) power supply and the gas jet source that is used for providing gas to air chamber.Gas is formed plasma by electrode ionization.Plasma etching is supported in the wafer below the top electrode.
During the plasma etching process, make gas ionization to form plasma by add lot of energy to the gas that is in lower pressure.By regulating the current potential of wafer, charged sample can be directed to so that vertically collide on the wafer in the plasma, makes that the material of no masked areas is removed on the wafer.
Semiconductor machining system is used for processing semiconductor wafer, thereby makes integrated circuit.Particularly in processes such as etching, oxidation, chemical vapor deposition (CVD), use semiconductor machining usually based on plasma.Traditional plasma process system is controlled at air-flow or the plasma flow in the plasma process chamber usually, so that the environment of the best is provided for processed wafer.
The even distribution of the uneven distribution meeting article on plasma body of the processing gas in the vacuum chamber has a negative impact.
Common reaction chamber structure as shown in Figure 1, comprise electrical insulating material forms 2, chamber wall 3, electrostatic chuck (perhaps mechanical chuck) 7 is formed an enclosure space 11, exhaust outlet 6 and vacuum plant (dried pump etc., not shown) connect, make space 11 form vacuum environment, process gas is by central air induction mouth 4 or peripheral inlet port 5, perhaps the two is combined into space 11, and the coil 1 of forms 2 tops passes to radio-frequency (RF) energy, by forms 2 couplings, in space 11, form plasma, the wafer on the chuck 78 is carried out etching.Also can etching reaction chamber wall 3 in the time of the plasma etching wafer; this has a negative impact to etching mechanical endurance, wafer engraving quality etc.; in space 11, often place liner with protective reaction chamber wall 3, and the bottom surface of chamber inner wall also has similar protective device (the two can manufacture one).As 9 among Fig. 1 is exactly reaction chamber side liner, and the 10th, the chamber end liner.The existence of liner 9 and end liner 10 makes reaction chamber wall 3 no longer directly contact plasma, avoids the bombardment of plasma, and makes cleaning and change more convenient.Exhaust outlet 6 can be placed on reaction chamber under or position such as side-lower.When carrying out PROCESS FOR TREATMENT (etching etc.), the chamber air inlet provides process gas, and the vacuum pump (not shown) that starts exhaust outlet 6 ends simultaneously is constant and remove etching particle with the holding chamber room pressure.
In order to obtain uniform etch-rate on the entire wafer surface, wish on wafer surface, can distribute uniformly plasma.Present more research work all lays stress on the uniformity that how improves plasma in the chamber by the intake method that improves reaction chamber, for example uses the gas distribution plate, nozzle of different shape etc.Exhaust outlet links to each other with vacuum pump, its position, aperture, axial etc. also can the uniformity of plasma in the chamber be exerted an influence.The present invention wishes to improve by a kind of novel cavity inner lining the discharge mode of gas in the chamber, thereby improves the uniformity of indoor plasma.
Summary of the invention
The semiconductor processing system reaction chamber that the purpose of this invention is to provide plasma uniformity in a kind of further raising chamber.
Technical solution of the present invention is as follows:
A kind of semiconductor processing system reaction chamber, comprise by forms, the enclosure space that chamber wall is formed, but chamber wall is established the side air inlet, also can on forms, be provided with the central air induction mouth, or establish side air inlet and central air induction mouth simultaneously, the chamber wall bottom is communicated with exhaust outlet, the chamber wall inboard is provided with liner, the bottom side is provided with end liner in the chamber wall, and the liner inboard is provided with the nexine liner, leaves distance between liner and nexine liner, constitute gas flow space, the wall of nexine liner is provided with some pores, and the nexine liner is communicated with air inlet with interior enclosure space, and gas flow space is communicated with exhaust outlet.
The bottom of nexine liner is provided with the nexine end liner, leaves distance between this nexine end liner and the end liner, and the nexine end liner is provided with some pores.
Pore uneven distribution on the nexine inner liner wall, near the part of exhaust outlet, gas cell distribution is less, and in part, gas cell distribution is more away from exhaust outlet.Because during gas flow and the friction of two inner liner wall, from big more to the frictional force that exhaust outlet will overcome from exhaust outlet pore effluent air far away more, structure of the present invention has increased these regional hole areas, make in the chamber gas from around the hole evenly discharge, thereby the uniformity of distribution of gas in the assurance chamber
Air vent aperture on the nexine inner liner wall can change, and pore 16 apertures of close exhaust outlet have increased the gas flow area of respective direction like this, and can reduce pressure drop less than the air vent aperture away from exhaust outlet, and assurance gas is evenly discharged in all directions.
Nexine liner wall thickness can be uneven, and is littler than the segment thickness of close steam vent away from the part of steam vent.Wall thickness reduces, and the length that is equivalent to the pore that gas passes through reduces, and also can play the purpose that reduces pressure drop, and is partly little than the segment thickness near steam vent away from the inner liner wall of steam vent like this, can play the effect that gas is evenly discharged equally.
The shape in hole is not limited to straight hole, can become cone angle etc. for stepped hole, hole inwall, and because the existence of plasma, the edge in hole must be handled by fillet, chamfering is preferably arranged to reduce air resistance in the hole both ends of the surface.Liner axially on, hole 16 also can vertically be bombarded on the wafer with better guiding plasma only in the part perforate near bottom electrode.
Pore uneven distribution on the nexine liner, aperture difference, shape difference and liner wall thickness inconsistent can combination in any to reach better effect.
The present invention has two-layer liner, the nexine liner is used for guaranteeing the uniformity of plasma in the chamber, utilize the buffering of gas flow space, improved the uniformity that gas to chamber is discharged, can improve the uniformity of plasma in the chamber by the inlet and outlet mode of reaction chamber.
Description of drawings
Fig. 1 is common reaction chamber generalized section;
Fig. 2 is the identical reaction chamber section of structure of air vent aperture on the nexine inner liner wall of the present invention;
Fig. 3 is the different reaction chamber section of structure of air vent aperture on the nexine inner liner wall of the present invention;
Fig. 4 represents the structural representation of an embodiment changing the wall thickness of nexine liner and the end liner pore is set.
Among the figure: 1, coil; 2, forms; 3, chamber wall; 4, central air induction mouth; 5, peripheral inlet port; 6, exhaust outlet; 7, chuck; 8, wafer; 9, liner; 10, end liner; 11, enclosure space; 12, nexine liner; 13, gas flow space; 14, the inner surface of nexine liner; 15, the outer surface of nexine liner; 16, pore; 17, pore; 18, nexine end liner.
Embodiment
Following examples are used to illustrate the present invention; but be not used for limiting the scope of the invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from spirit and scope of the present utility model; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be limited by every claim.
Embodiment 1
With reference to figure 2, reaction chamber of the present invention comprises forms 2, chamber wall 3, chuck 7 in the inside of outer liner 9, also has nexine liner 12, leave suitable distance between the two-layer liner, constitute gas flow space 13, be covered with the identical pore of diameter 16 on the wall of nexine liner 12, but hole uneven distribution, near the part of exhaust outlet 6, boring ratio is less, and is then many away from part, exhaust outlet 6 among Fig. 2 is at the side-lower of chamber, can certainly under.Because during gas flow and the friction of two inner liner wall, hole 16 effluent airs far away more from distance exhaust outlet 6 are big more to the frictional force that exhaust outlet 6 will overcome, structure among the figure has increased the number in hole, thereby increased the area of these overall air inlets in zone, make in the chamber gas from around the hole evenly discharge, thereby the uniformity of distribution of gas in the assurance chamber, the uniformity of plasma is subjected to the inhomogeneity influence of gas to a great extent, helps obtaining uniform plasma like this.
Embodiment 2
With reference to figure 3, reaction chamber structure and embodiment 1 is most identical, and difference is that the aperture of the pore 16 that is covered with on the wall of nexine liner 12 changes, and 16 apertures, hole of close exhaust outlet 6 are less than the hole away from exhaust outlet, is that the aperture on the left side is greater than the right among the figure.Increased the gas flow area of respective direction like this, and can reduce pressure drop, assurance gas is evenly discharged in all directions.
With reference to figure 3 and Fig. 4, the reaction chamber structure is most identical with embodiment 1, difference is that the wall thickness of nexine liner 12 can be respectively to difference, inner liner wall away from exhaust outlet 6 is partly little than the segment thickness near steam vent, surfaces externally and internally 14,15 cylinders by two decentraction of nexine inner liner wall constitute, and reach the purpose of wall thickness gradual change.Wall thickness reduces, and is equivalent to hole 16 length that gas passes through and reduces, and also can play the purpose that reduces pressure drop, and is partly little than the segment thickness near steam vent away from the inner liner wall of exhaust outlet 6 like this, can play the effect that gas is evenly discharged equally.
Embodiment 4
With reference to figure 3 and Fig. 4, the reaction chamber structure is most identical with embodiment 3, difference is that the bottom of nexine liner 12 is provided with nexine end liner 18, leave suitable distance between nexine end liner 18 and the end liner 10, nexine end liner 18 is provided with some pores 17, gas is understood some and is discharged from the bottom surface, can obtain more uniform exhaust effect.
Claims (7)
1, a kind of semiconductor processing system reaction chamber, comprise by forms (2), the enclosure space (11) that chamber wall (3) is formed, chamber wall and/or forms are provided with air inlet, the chamber wall bottom is communicated with exhaust outlet (6), chamber wall (3) inboard is provided with liner (9), the interior bottom side of chamber wall (3) is provided with end liner (10), it is characterized in that, be provided with nexine liner (12) in described liner (9) inboard, between liner (9) and nexine liner (12), leave distance, constitute gas flow space (13), the wall of nexine liner (12) is provided with some pores, nexine liner (12) is communicated with air inlet with interior enclosure space, and gas flow space (13) is communicated with exhaust outlet (6).
2, semiconductor processing system reaction chamber as claimed in claim 1 is characterized in that, the bottom of nexine liner (12) is provided with nexine end liner (18), leaves distance between this nexine end liner (18) and the end liner (10), and nexine end liner (18) is provided with some pores.
3, semiconductor processing system reaction chamber as claimed in claim 1 or 2 is characterized in that, the air vent aperture on the described nexine inner liner wall distributes less in the part near exhaust outlet (6), is distributing more away from exhaust outlet (6) part.
4, semiconductor processing system reaction chamber as claimed in claim 1 or 2 is characterized in that, the air vent aperture on the nexine inner liner wall near the part of exhaust outlet (6) less than part away from exhaust outlet (6).
5, semiconductor processing system reaction chamber as claimed in claim 1 or 2 is characterized in that, described nexine inner liner wall away from the thickness of exhaust outlet (6) part less than thickness near exhaust outlet (6) part.
6, semiconductor processing system reaction chamber as claimed in claim 1 or 2 is characterized in that, the pore on the nexine inner liner wall be shaped as straight hole, stepped hole or taper angle shape hole, and the edge of pore is done fillet and is handled.
7, semiconductor processing system reaction chamber as claimed in claim 1 or 2 is characterized in that, the both ends of the surface of the pore on the nexine inner liner wall have chamfering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101307342A CN100369192C (en) | 2005-12-26 | 2005-12-26 | Semiconductor processing system reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101307342A CN100369192C (en) | 2005-12-26 | 2005-12-26 | Semiconductor processing system reaction chamber |
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| CN1848376A true CN1848376A (en) | 2006-10-18 |
| CN100369192C CN100369192C (en) | 2008-02-13 |
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| CNB2005101307342A Active CN100369192C (en) | 2005-12-26 | 2005-12-26 | Semiconductor processing system reaction chamber |
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| CN101206999B (en) * | 2006-12-18 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining and reaction chamber containing the same |
| CN101985746A (en) * | 2009-07-28 | 2011-03-16 | 丽佳达普株式会社 | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
| CN102403181A (en) * | 2010-09-14 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and plasma processing equipment applying same |
| CN101930891B (en) * | 2009-06-25 | 2012-08-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and lining device |
| CN102766902A (en) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber device and substrate processing equipment with processing chamber device |
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| CN103594314A (en) * | 2012-08-17 | 2014-02-19 | 晶呈科技股份有限公司 | Gas phase etching equipment with multiple cavities |
| CN103811258A (en) * | 2012-11-06 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma reaction chamber |
| CN104037046A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Reaction chamber and wafer machining method using same |
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| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
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| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
| WO2019062573A1 (en) * | 2017-09-27 | 2019-04-04 | 北京北方华创微电子装备有限公司 | Process chamber and capacitively coupled plasma apparatus |
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| US6048798A (en) * | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
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| CN101206999B (en) * | 2006-12-18 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining and reaction chamber containing the same |
| CN101521143B (en) * | 2008-02-25 | 2012-12-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lining mechanism for semiconductor processing equipment and manufacturing method thereof |
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| US8876974B2 (en) | 2009-07-28 | 2014-11-04 | Ligadp Co., Ltd. | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
| CN101985746A (en) * | 2009-07-28 | 2011-03-16 | 丽佳达普株式会社 | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
| TWI393802B (en) * | 2009-07-28 | 2013-04-21 | Lig Adp Co Ltd | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
| CN102403181A (en) * | 2010-09-14 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and plasma processing equipment applying same |
| CN102403181B (en) * | 2010-09-14 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and apply the apparatus for processing plasma of this processing chamber |
| CN102766902A (en) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber device and substrate processing equipment with processing chamber device |
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| CN103594314A (en) * | 2012-08-17 | 2014-02-19 | 晶呈科技股份有限公司 | Gas phase etching equipment with multiple cavities |
| CN103594314B (en) * | 2012-08-17 | 2015-11-18 | 晶呈科技股份有限公司 | There is the vapor phase etchant equipment of Multicarity |
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| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
| CN104746078B (en) * | 2013-12-27 | 2018-01-09 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and plasma processing device |
| CN104752274A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and semiconductor processing equipment |
| CN104752274B (en) * | 2013-12-29 | 2017-12-19 | 北京北方华创微电子装备有限公司 | Processing chamber and semiconductor processing equipment |
| CN104037046A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Reaction chamber and wafer machining method using same |
| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
| CN108950519B (en) * | 2017-05-19 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Lining of chamber and chamber |
| WO2019062573A1 (en) * | 2017-09-27 | 2019-04-04 | 北京北方华创微电子装备有限公司 | Process chamber and capacitively coupled plasma apparatus |
| CN109920717A (en) * | 2019-03-08 | 2019-06-21 | 沈阳拓荆科技有限公司 | Wafer processing device |
| CN109920717B (en) * | 2019-03-08 | 2022-06-17 | 拓荆科技股份有限公司 | Wafer processing device |
| CN111105976A (en) * | 2019-12-24 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Semiconductor equipment reaction chamber |
| CN111105976B (en) * | 2019-12-24 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Semiconductor equipment reaction chamber |
| CN111471980A (en) * | 2020-04-15 | 2020-07-31 | 北京北方华创微电子装备有限公司 | Reaction chamber suitable for remote plasma cleaning, deposition equipment and cleaning method |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |