CN104658845B - Plasma processing apparatus and its isolating device - Google Patents
Plasma processing apparatus and its isolating device Download PDFInfo
- Publication number
- CN104658845B CN104658845B CN201310596754.3A CN201310596754A CN104658845B CN 104658845 B CN104658845 B CN 104658845B CN 201310596754 A CN201310596754 A CN 201310596754A CN 104658845 B CN104658845 B CN 104658845B
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- catch
- support column
- mechanical isolation
- isolation device
- pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of plasma processing apparatus and its mechanical isolation device, wherein, the mechanical isolation device includes:Catch, is shaped to block completely to be connected with a support column below the opening of the substrate transfer door and the pad, the catch；Retractor device, the support column passes through the retractor device；Upper backup pad, it is arranged above the bellows, and its other end is fixed on chamber sidewall upper and lower support plate, and it is arranged at below the bellows；It is arranged at the performs device between the upper backup pad and the lower supporting plate, the performs device can be moved up and down, and drive support column to move up and down by the lower supporting plate, to cause the catch to move up and down, so as to control whether connecting for substrate transfer door and the pad openings, wherein, heater is connected with below the support column, the support column is connected with heater by metal wire.The present invention ensure that the temperature consistency of the catch and pad, improve the temperature uniformity of substrate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of plasma processing apparatus and its isolating device.
Background technology
Plasma treatment appts carry out the base of semiconductor chip and plasma flat-plate using the operation principle of vacuum reaction chamber
The processing of piece.The operation principle of vacuum reaction chamber is that the reaction gas containing appropriate etchant source gas is passed through in vacuum reaction chamber
Body, then carries out RF energy input to the vacuum reaction chamber again, with activated reactive gas, to excite and maintain plasma,
To etch material layer on substrate surface or over the substrate surface depositing layer of material respectively, so to semiconductor chip and etc. from
Sub- flat board is processed.
Plasma processing apparatus is that the requirement of chamber indoor environment is very strict, wherein, it is particularly sensitive to metallic pollution.In order to
Adhering contaminant in placed cavity room, often different zones in plasma process chamber deposit one layer of process layer, example in the industry
Such as to chamber inner wall anodized, such as addition band Y2O3Coat.The plasma process ring produced in some gas ignitions
In border, anodic oxide coating is because physical-chemical reaction occurs for the attack of these plasmas so that very high gold can be produced to processing procedure
Belong to pollutant rate.
At least one substrate transfer door is often provided with the side wall of plasma process chamber.In plasma processing chambers
A pad is provided with the top cover of room, it extends to chamber interior from top cover, above the base station, and surrounds base station setting,
Therefore, substrate transfer should also set a similar transmission gate on pad corresponding to the region of substrate transfer door for convenience.
However, certain distance is certainly existed between two transmission gates, therefore being fixed on the pad on top cover can not protect chamber to transmit
The effect in door region, it is therefore desirable to which movable mechanical mechanism protects chamber transmission gate region, rather than fixed pad.In production
During raw plasma, rise the mechanical structure, chamber transmission gate region is isolated with plasma, thus avoid this region by etc.
Gas ions are attacked and produce high metal pollutant rate.
However, in plasma process chamber, its pad needs the back of the body to be uniformly heated to certain temperature, if located in above-mentioned
Mechanical structure between two transmission gates does not have temperature control function, will result in the uneven of substrate ambient temperature.
Inside plasma process chamber, though small temperature difference can all produce extreme influence to substrate processing procedure, therefore without temperature
The mechanical structure of degree control function frequently can lead to processing procedure of the substrate in transmission gate region, and compared with substrate, other region processing procedures are significantly carried
High or reduction, this is that those skilled in the art are not intended to see.
The present invention is based on this proposition.
The content of the invention
For the above mentioned problem in background technology, the present invention proposes a kind of plasma processing apparatus and its isolation dress
Put.
The invention provides a kind of mechanical isolation device for plasma processing apparatus, it is arranged at plasma
Manage between the substrate transfer door of device and pad, wherein, the substrate transfer door is arranged at the plasma processing apparatus
On the wall of side, the pad is ring-type, and it extends into chamber interior above the top cover of the plasma processing apparatus and set
Around being placed in above the substrate, an opening is provided with the pad, wherein, the mechanical isolation device includes:
Catch, is shaped to block completely to connect below the opening of the substrate transfer door and the pad, the catch
It is connected to a support column；
Retractor device, the support column passes through the retractor device；
Upper backup pad, it is arranged above the bellows, and its other end is fixed in chamber sidewall；
Lower supporting plate, it is arranged at below the bellows；
Be arranged at the performs device between the upper backup pad and the lower supporting plate, the performs device can on move down
It is dynamic, and drive support column to move up and down by the lower supporting plate, to cause the catch to move up and down, so as to control the base
Whether piece transmission gate connects with the pad openings,
Wherein, heater is connected with below the support column, the support column is connected with heater by metal wire.
Further, the retractor device includes bellows.
Further, the mechanical isolation device also includes a coolant circulation unit, passes through coolant inlet pipe respectively
The performs device is connected to coolant output tube.
Further, the heater and the coolant circulation unit have been also respectively connected with a control device, described
Control device is used to control the work of heater and the coolant circulation unit to control the mechanical isolation device
Temperature.
Further, the temperature of the catch is needed to be set by the control device according to specific processing procedure.
Further, the heater is supply unit, and it can be transmitted by the metal wire to the support column
Heat, so as to heat the catch.
Further, the performs device is cylinder.
Further, the catch is shaped as arcuate stream line structure, and in uneven thickness, and the support column is connected to institute
State on the particle of catch.
Further, the shape and its particle of the catch should be according to the shapes and substrate of the plasma processing apparatus
Size determine.
Further, the support column is by heat conducting material processing procedure.
Further, the support column is made of aluminum.
Second aspect of the present invention provides a kind of plasma processing apparatus, wherein, the plasma processing apparatus bag
Include previously described mechanical isolation device.
The plasma processing apparatus and its mechanical isolation device that the present invention is provided have temperature control system, so as to realize
The catch of mechanical isolation device and the temperature of pad are consistent, so as to avoid due to the inconsistent caused deposition of both temperature
The problem of thing is accumulated, and further increase the temperature uniformity of substrate.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma etch chamber room according to a specific embodiment of the invention；
Fig. 2 a~2b is the mechanical isolation device of the plasma etch chamber room according to a specific embodiment of the invention
Structural representation；
Fig. 3 is the temperature control of the mechanical isolation device of the plasma etch chamber room according to a specific embodiment of the invention
The structural representation of device processed.
Embodiment
Below in conjunction with accompanying drawing, the embodiment to the present invention is illustrated.
Hereafter will the present invention will be described by taking plasma etch chamber room as an example.However, those skilled in the art should
Understand, the invention is not restricted to suitable for plasma etch chamber room, it is also not intended as limitation of the present invention.
Embodiment of the present invention provides improved de-clamping process, and it uses lift pin to reduce in de-clamping
During damage semiconductor arts piece possibility.It is noted that " semiconductor arts piece ", " wafer " and " substrate " these words
Will be by frequent used interchangeably in subsequent explanation, in the present invention, they all refer in the process chamber 110 shown in Fig. 1
Processed process conditions, process conditions are not limited to wafer, substrate, substrate, large-area flat-plate substrate etc..For convenience of explanation, this is special
Profit main will make exemplary illustration in embodiment illustrates and illustrates by taking " substrate " as an example.
Fig. 1 is the structural representation of the plasma etch chamber room according to a specific embodiment of the invention.Such as Fig. 1 institutes
Show, plasma etch chamber room 200 has process chambers, process chambers are substantially cylindricality, and processing chamber body sidewall base
It is vertical in sheet, there is Top electrode and bottom electrode arranged in parallel in process chambers.Generally, between Top electrode and bottom electrode
Region be processing region P, region P will form high-frequency energy to light and maintain plasma.In the top of electrostatic chuck 206
Place substrate W to be processed, substrate W can be treated the semiconductor chip that to etch or process or wait flat board to be processed into
The glass plate of display.Wherein, the electrostatic chuck 206 is used for clamping substrate W.Reacting gas is defeated from gas source 201
Enter to process chambers, and process volume is entered by gas spray 202.One or more radio-frequency power supplies 207 can be with coverlet
Solely apply and be respectively applied on the bottom electrode or simultaneously on Top electrode and bottom electrode, radio-frequency power to be transported to down
On electrode or on Top electrode and bottom electrode, so as to produce big electric field inside process chambers.Most of electric field lines are comprised in
In processing region P between Top electrode and bottom electrode, this electric field accelerates to being present in the electronics inside process chambers on a small quantity,
It is allowed to the gas molecule collision with the reacting gas of input.These collisions cause the ionization of reacting gas and swashing for plasma
Hair, so as to produce plasma in process chambers.The neutral gas molecule of reacting gas loses when being subjected to these highfields
Electronics, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, with the neutrality in processed substrate
Material is combined, and excites substrate to process, that is, etch, deposit etc..Set at some suitable position of plasma etch chamber room 200
It is equipped with exhaust gas region, exhaust gas region and external exhaust apparatus（Such as vavuum pump pump 205）It is connected, in processing procedure
It is middle to extract used reacting gas and bi-product gas out chamber.
In addition, as shown in figure 1, plasma etch chamber room 200 also includes a pad 208, for plasma to be gathered
Above substrate W.The pad 208 is ring-type, and it extends from the top of top cover 203 of the plasma etch chamber room 200
Around entering chamber interior and being arranged above the substrate W.It will be appreciated by those skilled in the art that in plasma etching
The somewhere of side wall 204 in device 200 is often provided with substrate transfer door 204a, for substrate transport W.Before processing procedure starts,
Manipulator（It is not shown）Substrate W is transported to chamber interiors from substrate transfer door 204a and be positioned on electrostatic chuck 206, electrostatic
Substrate W is clamped and fastened on fixed position by chuck 206 using absorption affinity.After processing procedure terminates, the de-clamping substrate of electrostatic chuck 206
W, then manipulator is again introduced into chamber from substrate transfer door 204a, and substrate W is removed to electrostatic chuck 206, finally by base
Piece W removes out chamber from substrate transfer door 204a.So move in circles, processing procedure seriatim can be carried out to some substrates.Therefore,
Substrate W transport for convenience, there is provided the plasma etch chamber room 200 of pad 208 also will be adaptively on pad 208
One opening 208a is set, so as to facilitate the transmission of substrate.That is, the opening 208a on pad 208 adapts to chamber sidewall 204
On substrate transfer door 204a unlatching and closure, to realize that manipulator is smoothly passed in and out from chamber interior, so as to realize that substrate W exists
The transmission and movement of chamber interior.
Fig. 2 a~2b is the mechanical isolation device of the plasma etch chamber room according to a specific embodiment of the invention
Structural representation.Mechanical isolation device is described in detail with reference to Fig. 2 a~Fig. 2 b.
As shown in Fig. 2 a~Fig. 2 b, mechanical isolation device 209 its be arranged on plasma etch chamber room substrate transfer door
204a and pad 208 opening 208a between, for control substrate transfer door 204a and pad 208 opening 208a connection and
It is no.Before processing procedure starts, substrate W needs to transmit into chamber interior, and mechanical isolation device 209 drops to low-end trim so that
The opening 208a of substrate transfer door 204a and pad 208 is interconnected, so as to allow manipulator that substrate W is passed sequentially through into substrate respectively
Transmission gate 204a and pad 208 opening 208a, are positioned over the top of electrostatic chuck 206.Clamped in substrate W by electrostatic chuck 206
After fixation, reacting gas from reacting gas source 201 into chamber interior produced under the exciting of RF energy plasma from
And before being etched, mechanical isolation device 209 rises to high-end trim, the opening 208a on compensating liner 208, so that will
Plasma is kept apart with chamber sidewall 204, avoids substrate transfer region from being occurred physico by plasma attack to realize
Learn the problem of reaction causes metallic pollution.
Specifically, mechanical isolation device 209 includes catch 2091, and its shape can be blocked described completely in raised configuration
Substrate transfer door 204a and the pad 208 opening 208a.A support column 2092, support column are connected with the catch 91
2092 extend to through retractor device.In the present embodiment, the retractor device is bellows 2096（bellows）.Bellows
Refer to the tubular elastomeric sensing element connected into foldable wrinkle piece along folding retractable direction.Its openend is fixed, sealing
End is in free state, and helical spring or reed increase elasticity using auxiliary.Internally edge in the presence of pressure during work
Tube length direction extends, and movable end is produced the displacement with pressure into certain relation.Bellows usually with displacement transducer group
The pressure sensor for being output as electricity is constituted altogether, is also sometimes used as isolation element.
Further, the top of bellows 2096 is provided with a upper backup pad 2093, support column 2092 passes through upper backup pad
2093, the other end of upper backup pad 2093 is fixedly connected on chamber sidewall 204.Lower supporting plate 2095 is arranged at the bellows
2096 lower sections.Wherein, it is not fixed between the bellows 2096 and lower supporting plate 2095.The He of upper backup pad 2093
Be provided with performs device between the lower supporting plate 2095, the performs device can telescopic moving up and down, and by under described
Supporting plate 2095 drives support column to move up and down a segment distance, to cause the catch 2091 to move up and down, so as to control described
Substrate transfer door 204a connecting or not connecting with the pad openings 208a's.
Further, the performs device is cylinder 2094.Specifically, for example when cylinder 2094 entirely compresses,
One section due to upper backup pad 2093 is fixed on chamber sidewall 204, therefore the upper backup pad 2093 is that will not occur relative displacement
's.Cylinder 2094 shrinks, i.e., volume diminishes, and therefore upward displacement occurs for lower supporting plate 2095, and bellows 2096 is in order to adapt to
The contraction of cylinder 2094 is also shunk, i.e., volume diminishes.Therefore, support column 2092 is entirely lifted up, occur it is vertical to
It is upper to move and drive the also motion upwards of catch 2091, now think that catch 2091 is just blocked in pad openings 208a and substrate transfer
Between door 204a.Similarly, when cylinder 2094 is entirely dilated, lower supporting plate 2095 is driven to be moved vertically downward, bellows
2096 also produce stretching to adapt to dilating for cylinder 2094.Being moved vertically downward for lower supporting plate 2095, drives support column
2092 also move and drive catch 2091 also to move downward vertically downward, now think that catch 2091 declines no longer to be barred from
Between pad openings 208a and substrate transfer door 204a.
It will be appreciated by those skilled in the art that padding 208 in plasma etch chamber room because process requirement, generally
With heating function.As shown in figure 1, being set around the ring liner 208 of the top of top cover 203 of plasma etch chamber room 200
Be equipped with a heater 210, heater 210 can uniform Heating liner 208, to avoid polymer deposits to pad, and
And be also uniform also for the environment temperature around guarantee substrate W.But it is due to have opening 208a on actual pad 208, opening
208a is but without temperature control, so as to can cause the uneven of substrate W ambient temperatures and influence the uneven of process results
Property.Therefore the mechanical isolation device 209 that the present invention is provided has temperature control function, and temperature control equipment T can be by machinery
Catch 2091 in structure 6 is consistent with the temperature on pad 208, so as to ensure the uniformity of substrate W ambient temperatures.
Fig. 3 is the temperature control of the mechanical isolation device of the plasma etch chamber room according to a specific embodiment of the invention
The structural representation of device processed.As shown in figure 3, the mechanical isolation device 209 also includes temperature control equipment T.Further,
The support column 2092 of mechanical isolation device 209 is that heat conducting material is made, and typically, is made up of metallic aluminium.Therefore, it is warm
Spending control device T can be by support column 2092 to the transmission temperature of catch 2091, so as to reach the goal of the invention of the present invention.
Further, temperature control equipment T further includes coolant circulation unit 211, passes through at least two respectively
Coolant duct 2097 is connected to the bellows 2096.Wherein, in the present embodiment, the coolant duct 2097 includes cold
But specifically, coolant inlet pipe 2097a, which is used to circulate from coolant, to be filled by liquid input pipe 2097a and coolant output tube 2097b
211 transmission coolants are put to bellows 2096, because support column 2092 is that, through bellows 2096, therefore coolant can be with cold
But the heat conductivity of support column 2092 and utilization support column 2092 reduces the temperature of catch 2091.Coolant output tube 2097b is used
In reclaiming coolant from bellows 2096, and coolant circulation unit 211 is transmitted back to, coolant circulation unit 211 is produced again
Raw coolant, predetermined temperature can be reduced to by the temperature of catch 2091 by so moving in circles.
Wherein, the lower section of support column 2092 is connected with heater 2012, the support column 2092 and heater
2012 are connected by some metal wires 2098.In the present embodiment, the heater 2012 is supply unit, and it can pass through
The metal wire 2098 transmits heat to the support column 2092, so as to heat the catch 2091.
As shown in figure 3, the heater 212 and the coolant circulation unit 211 have been also respectively connected with control dress
213 are put, the control device 213 is used to control the work of heater 212 and the coolant circulation unit 211 so as to comprehensive
Close the temperature of the control mechanical isolation device.
As shown in the drawing, bellows 2096 is vacuum, can be separated the vacuum of chamber interior and outside air, together
When for transmit produced from heater 2012 heat to mechanical catch 2091, so as to realize the heating to catch 2091.Together
When, when catch 2091 is overheated, heater 2012 stops heating, and the heat on catch 2091 is inputted by flowing through coolant
Pipe 2097a and coolant output tube 2097b coolant are taken away.
Further, the temperature of the catch 2091 is needed to be set by the control device 213 according to specific processing procedure.
As shown in Fig. 2 a~Fig. 2 b, according to the specific embodiment of the present invention, the catch 2091 is shaped as arc
Streamline construction, and it is in uneven thickness, the support column 2092 is connected on the particle of the catch（It is not shown）.Further,
The shape and its particle of the catch 2091 should be true according to the shape of the plasma etch chamber room 200 and substrate W size
It is fixed.It will be appreciated by those skilled in the art that the chamber of plasma etch chamber room 200 is cylindricality, its cross section be it is similar just
It is square, and substrate W is circular, catch 2091 is located at the somewhere space between substrate W and chamber sidewall.Because space bit is equipped with
Limit, the strong point between support column 2092 and catch 2091 can not possibly be located near the horizontal midpoint of catch 2091, and in catch
The strong point is not located at midpoint under conditions of 2091 uniform qualities, is likely to result in inclination.Therefore, the present invention is creatively by catch
2091 are designed as fairshaped, and are connected to dagger 2092 on the particle of the catch by uneven thickness.Such as Fig. 2 a~
Shown in Fig. 2 b, the particle of catch 2091 can be moved to the position of the horizontal area of catch 2091 very side, be thus chamber design
Leave Maximum Space.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
In addition, any reference in claim should not be considered as to the claim involved by limitation；The word of " comprising " one is not excluded for
Unlisted device or step in other claims or specification；The words such as " first ", " second " are only used for representing title, and
It is not offered as any specific order.
Claims (12)
1. a kind of mechanical isolation device for plasma processing apparatus, its substrate for being arranged on plasma processing apparatus is passed
Between defeated door and pad, wherein, the substrate transfer door is arranged on the side wall of the plasma processing apparatus, the pad
It is ring-type, it extends into chamber interior above the top cover of the plasma processing apparatus and is arranged above the substrate
Around, an opening is provided with the pad, wherein, the mechanical isolation device includes:
Catch, is shaped to block completely to be connected with below the opening of the substrate transfer door and the pad, the catch
One support column；
Retractor device, the support column passes through the retractor device；
Upper backup pad, it is arranged above the retractor device, and its other end is fixed in chamber sidewall；
Lower supporting plate, it is arranged at below the retractor device；
The performs device between the upper backup pad and the lower supporting plate is arranged at, the performs device can be moved up and down,
And drive support column to move up and down by the lower supporting plate, to cause the catch to move up and down, so as to control the substrate
Whether transmission gate connects with the pad openings,
Wherein, heater is connected with below the support column, the support column is connected with heater by metal wire, so that
The heater can be heated by the support column to the catch.
2. mechanical isolation device according to claim 1, it is characterised in that the retractor device includes bellows.
3. mechanical isolation device according to claim 1, it is characterised in that the mechanical isolation device also includes a cooling
Liquid circulating device, it is connected to the performs device by coolant inlet pipe and coolant output tube respectively.
4. mechanical isolation device according to claim 3, it is characterised in that the heater and coolant circulation
Device has been also respectively connected with a control device, and the control device is used to controlling heater and the coolant circulation unit
Work is so as to control the temperature of the catch of the mechanical isolation device.
5. mechanical isolation device according to claim 4, it is characterised in that the temperature of the catch is by the control device
Need to be set according to specific processing procedure.
6. mechanical isolation device according to claim 1, it is characterised in that the heater is supply unit, its energy
Heat is enough transmitted to the support column by the metal wire, so as to heat the catch.
7. mechanical isolation device according to claim 1, it is characterised in that the performs device is cylinder.
8. mechanical isolation device according to claim 1, it is characterised in that the catch is shaped as arcuate stream line knot
Structure, and it is in uneven thickness, the support column is connected on the particle of the catch.
9. mechanical isolation device according to claim 1, it is characterised in that the shape and its particle of the catch should bases
The shape of the plasma processing apparatus and the size of substrate are determined.
10. mechanical isolation device according to claim 1, it is characterised in that the support column is by heat conducting material system
Into.
11. mechanical isolation device according to claim 1, it is characterised in that the support column is made of aluminum.
12. a kind of plasma processing apparatus, it is characterised in that the plasma processing apparatus includes claim 1 to 11
Mechanical isolation device described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310596754.3A CN104658845B (en) | 2013-11-22 | 2013-11-22 | Plasma processing apparatus and its isolating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310596754.3A CN104658845B (en) | 2013-11-22 | 2013-11-22 | Plasma processing apparatus and its isolating device |
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| CN104658845A CN104658845A (en) | 2015-05-27 |
| CN104658845B true CN104658845B (en) | 2017-07-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105067599A (en) * | 2015-08-05 | 2015-11-18 | 南京闻智生物科技有限公司 | Chemiluminescence immune detection kit for detecting pro-gastrin-releasing peptide |
| CN208014647U (en) * | 2018-04-24 | 2018-10-26 | 君泰创新（北京）科技有限公司 | A kind of xegregating unit of mud chamber |
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|---|---|---|---|---|
| US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
| CN101809724A (en) * | 2007-09-29 | 2010-08-18 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN103025914A (en) * | 2010-07-30 | 2013-04-03 | 吉坤日矿日石金属株式会社 | Sputtering target and/or coil and process for producing same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130105085A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Plasma reactor with chamber wall temperature control |
| CN103295867B (en) * | 2012-02-29 | 2016-12-28 | 细美事有限公司 | Plasma boundary limiter unit and for processing the equipment of substrate |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
| CN101809724A (en) * | 2007-09-29 | 2010-08-18 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN103025914A (en) * | 2010-07-30 | 2013-04-03 | 吉坤日矿日石金属株式会社 | Sputtering target and/or coil and process for producing same |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |