CN104658845A - Plasma processing device and partitioning device thereof - Google Patents
Plasma processing device and partitioning device thereof Download PDFInfo
- Publication number
- CN104658845A CN104658845A CN201310596754.3A CN201310596754A CN104658845A CN 104658845 A CN104658845 A CN 104658845A CN 201310596754 A CN201310596754 A CN 201310596754A CN 104658845 A CN104658845 A CN 104658845A
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- support column
- mechanical isolation
- isolation device
- catch
- plasma processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
Abstract
The invention discloses a plasma processing device and a mechanical partitioning device thereof. The mechanical partitioning device comprises a baffle plate, a telescopic device, an upper support plate and an execution device, wherein the shape of the baffle plate can completely shield a substrate conveying gate and an opening of a liner; a support column is connected below the baffle plate; the support column penetrates through the telescopic device; the upper support plate is arranged above a corrugated pipe; the other end of the upper support plate is fixed at upper and lower support plates on the side wall of a chamber, and is arranged below the corrugated pipe; the execution device is arranged between the upper support plate and a lower support plate; the execution device can move upwards and downwards and drive the support column to move upwards and downwards through the lower support plate, then the baffle plate can move upwards and downwards, and whether the substrate conveying gate and the opening of the liner are communicated or not can be controlled; a heating device is connected below the support column; the support column is connected with the heating device through metal wires. By adopting the plasma processing device and the partitioning device, the temperature consistency of the baffle plate and the liner is ensured, and the temperature uniformity of a substrate is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of plasma processing apparatus and spacer assembly thereof.
Background technology
Plasma treatment appts utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, pass into the reacting gas containing suitable etchant source gas, and then radio-frequency (RF) energy input is carried out to this vacuum reaction chamber, with activated reactive gas, excite and maintain plasma, so that the material layer etched respectively on substrate surface or over the substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
Plasma processing apparatus is that the requirement of chamber environment is very strict, wherein, especially responsive to metallic pollution.In order to the indoor adhering contaminant of placed cavity, the zones of different in the industry often in plasma process chamber deposits one deck processing layer, such as, to chamber inner wall anodized, as added band Y
2o
3coat.In the plasma processing environment that some gas ignition produces, anodic oxide coating due to these plasmas attack generation physical-chemical reaction thus very high metal pollutant rate can be produced to processing procedure.
The sidewall of plasma process chamber is often provided with at least one substrate transfer door.The top cover of plasma process chamber is provided with a liner, it extends to chamber interior from top cover, is positioned at above base station, and surrounds base station setting, therefore, conveniently substrate transfer corresponds to the region of substrate transfer door and also should arrange a similar transmission gate on liner.But certainly exist certain distance between two transmission gates, the liner be therefore fixed on top cover can not protect the effect in chamber transmission gate region, therefore need movable mechanical mechanism to protect chamber transmission gate region, instead of fixing liner.When producing plasma, rising this mechanical structure, chamber transmission gate region and plasma being isolated, thus avoids this region attacked by plasma and produce high metal pollutant rate.
But in plasma process chamber, its liner needs the back of the body to be uniformly heated to uniform temperature, if the mechanical structure between above-mentioned two transmission gates does not have temp. control function, the uneven of substrate ambient temperature will be caused.Inner in plasma process chamber, even if small temperature contrast all can produce extreme influence to substrate processing procedure, the mechanical structure that so there is no temp. control function often cause the processing procedure of substrate in transmission gate region comparatively other region processing procedures of substrate significantly improve or reduce, this is that those skilled in the art do not wish to see.
The present invention proposes based on this just.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma processing apparatus and spacer assembly thereof.
The invention provides a kind of mechanical isolation device for plasma processing apparatus, it is arranged between the substrate transfer door of plasma processing apparatus and liner, wherein, described substrate transfer door is arranged on the sidewall of described plasma processing apparatus, described liner is ring-type, and it extends into chamber interior and to be arranged at above described substrate around above the top cover of described plasma processing apparatus, and described liner is provided with an opening, wherein, described mechanical isolation device comprises:
Catch, its shape can block the opening of described substrate transfer door and described liner completely, is connected with a support column below described catch;
Retractor device, described support column is through described retractor device;
Upper backup pad, it is arranged at above described bellows, and its other end is fixed in chamber sidewall;
Lower supporting plate, it is arranged at below described bellows;
Be arranged at the final controlling element between described upper backup pad and described lower supporting plate, described final controlling element can move up and down, and drives support column to move up and down by described lower supporting plate, moves up and down to make described catch, thus control whether being communicated with of described substrate transfer door and described pad openings
Wherein, be connected with heater below described support column, described support column is connected by metal wire with heater.
Further, described retractor device comprises bellows.
Further, described mechanical isolation device also comprises a coolant circulation unit, is connected to described final controlling element respectively by coolant inlet pipe and cooling fluid efferent duct.
Further, described heater and described coolant circulation unit are also connected to a control device, and described control device is for controlling the work of heater and described coolant circulation unit thus controlling the temperature of described mechanical isolation device.
Further, the temperature of described catch is needed to set according to concrete processing procedure by described control device.
Further, described heater is supply unit, and it by described metal wire to described support column transferring heat, thus can heat described catch.
Further, described final controlling element is cylinder.
Further, the shape of described catch is arcuate stream line structure, and in uneven thickness, and described support column is connected on the particle of described catch.
Further, the shape of described catch and particle thereof should be determined according to the size of the shape of described plasma processing apparatus and substrate.
Further, described support column is by heat conducting material processing procedure.
Further, described support column is made of aluminum.
Second aspect present invention provides a kind of plasma processing apparatus, and wherein, described plasma processing apparatus comprises previously described mechanical isolation device.
Plasma processing apparatus provided by the invention and mechanical isolation device thereof have temperature control system, thus the temperature of the catch and liner that realize mechanical isolation device is consistent, thus avoid the problem of the accumulation of deposits caused because both temperature are inconsistent, and further increase the temperature uniformity of substrate.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma etch chamber room according to the present invention's specific embodiment;
Fig. 2 a ~ 2b is the structural representation of the mechanical isolation device of plasma etch chamber room according to the present invention's specific embodiment;
Fig. 3 is the structural representation of the temperature control equipment of the mechanical isolation device of plasma etch chamber room according to the present invention's specific embodiment.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Hereafter will the present invention will be described for plasma etch chamber room.But it will be appreciated by those skilled in the art that and the invention is not restricted to be applicable to plasma etch chamber room, it is not also considered as limitation of the present invention.
Execution mode of the present invention provides the de-clamping process of improvement, and it adopts lift pin to reduce the possibility damaging semiconductor arts piece in de-clamping process.It is to be noted; " semiconductor arts piece ", " wafer " and " substrate " these words often will be exchanged use in explanation subsequently; in the present invention; they all refer to process conditions processed in the process chamber 110 shown in Figure 1A, and process conditions is not limited to wafer, substrate, substrate, large-area flat-plate substrate etc.For convenience of description, this patent mainly will make exemplary illustration for " substrate " in execution mode illustrates and illustrates.
Fig. 1 is the structural representation of the plasma etch chamber room according to the present invention's specific embodiment.As shown in Figure 1, plasma etch chamber room 200 has a process chambers, and process chambers is essentially cylindricality, and process chambers sidewall perpendicular, there is in process chambers top electrode arranged in parallel and bottom electrode.Usually, the region between top electrode and bottom electrode is processing region P, this region P by formation high-frequency energy to light and maintain plasma.Above electrostatic chuck 206, place substrate W to be processed, this substrate W can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.Wherein, described electrostatic chuck 206 is for clamping substrate W.Reacting gas is input in process chambers from gas source 201, and enters process volume by gas spray 202.One or more radio-frequency power supply 207 can be applied individually on the bottom electrode or is applied on top electrode and bottom electrode respectively simultaneously, in order to be transported on bottom electrode by radio-frequency power or on top electrode and bottom electrode, thus produce large electric field in process chambers inside.In the involved processing region P between the upper and lower electrodes of most of electric field line, this electric field accelerates the electronics being present in process chambers inside on a small quantity, makes it the gas molecule collision with the reacting gas inputted.These collisions cause exciting of the ionization of reacting gas and plasma, thus produce plasma in process chambers.The neutral gas molecule of reacting gas loses electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, and the neutral substance in processed substrate is combined, and excites substrate to process, i.e. etching, deposit etc.Certain suitable position of plasma etch chamber room 200 is provided with exhaust gas region, and exhaust gas region is connected with external exhaust apparatus (such as vacuum pump pump 205), in order to extract chamber out by by the reacting gas crossed and bi-product gas in processing procedure.
In addition, as shown in Figure 1, plasma etch chamber room 200 also comprises a liner 208, for being gathered above substrate W by plasma.Described liner 208 is ring-types, and it extends into chamber interior and be arranged at and to be positioned at above described substrate W around above the top cover 203 of described plasma etch chamber room 200.It will be appreciated by those skilled in the art that sidewall 204 somewhere in plasma etching device 200 is often provided with a substrate transfer door 204a, for substrate transport W.Before processing procedure starts, manipulator (not shown) transports substrate W to chamber interior from substrate transfer door 204a and is positioned on electrostatic chuck 206, and electrostatic chuck 206 utilizes absorption affinity that substrate W is clamped and fastened on fixed position.After processing procedure terminates, electrostatic chuck 206 de-clamping substrate W, then manipulator enters chamber again from substrate transfer door 204a, and removes to electrostatic chuck 206 by substrate W, finally substrate W is removed chamber from substrate transfer door 204a.So move in circles, processing procedure can be carried out to some substrates seriatim.Therefore, the conveniently transport of substrate W, the plasma etch chamber room 200 being provided with liner 208 also will arrange an opening 208a adaptively on liner 208, thus facilitates the transmission of substrate.That is, opening 208a on liner 208 adapts to the opening and closing of the substrate transfer door 204a in chamber sidewall 204, passes in and out smoothly from chamber interior to realize manipulator, thus realizes substrate W in the transmission of chamber interior and movement.
Fig. 2 a ~ 2b is the structural representation of the mechanical isolation device of plasma etch chamber room according to the present invention's specific embodiment.Below in conjunction with Fig. 2 a ~ Fig. 2 b, mechanical isolation device is described in detail.
As shown in Fig. 2 a ~ Fig. 2 b, mechanical isolation device 209 its be arranged between the substrate transfer door 204a of plasma etch chamber room and the opening 208a of liner 208, for controlling whether being communicated with of the opening 208a of substrate transfer door 204a and liner 208.Before processing procedure starts, substrate W needs to transmit into chamber interior, mechanical isolation device 209 drops to low-end trim, the opening 208a of substrate transfer door 204a and liner 208 is interconnected, thus allow manipulator by substrate W respectively successively by the opening 208a of substrate transfer door 204a and liner 208, be positioned over above electrostatic chuck 206.After substrate W is gripped by electrostatic chuck 206, reacting gas enters chamber interior generation plasma thus before etching under the exciting of radio-frequency (RF) energy from reacting gas source 201, mechanical isolation device 209 rises to high-end trim, for the opening 208a on compensating liner 208, thus plasma and chamber sidewall 204 are kept apart, there is to realize avoiding substrate transfer region to be attacked by plasma the problem that physical-chemical reaction causes metallic pollution.
Particularly, mechanical isolation device 209 comprises catch 2091, and its shape can block the opening 208a of described substrate transfer door 204a and described liner 208 completely when raised configuration.Described catch is connected with a support column 2092 for 91 times, and support column 2092 extends to through retractor device.In the present embodiment, described retractor device is bellows 2096(bellows).Bellows refers to the tubular elastomeric senser connected into along folding retractable direction with collapsible wrinkle sheet.Its openend is fixed, and sealed end is in free state, and utilizes auxiliary helical spring or reed to increase elasticity.Extend along tube length direction under the effect of internal pressure during work, make movable end produce the displacement becoming certain relation with pressure.Bellows usually combines with displacement transducer the pressure sensor forming and export as electricity, is sometimes also used as isolated component.
Further, be provided with a upper backup pad 2093 above bellows 2096, support column 2092 is through upper backup pad 2093, and the other end of upper backup pad 2093 is fixedly connected on chamber sidewall 204.Lower supporting plate 2095 is arranged at below described bellows 2096.Wherein, be not fixing between described bellows 2096 and lower supporting plate 2095.Final controlling element is provided with between described upper backup pad 2093 and described lower supporting plate 2095, described final controlling element can telescopic moving up and down, and drive support column to move up and down a segment distance by described lower supporting plate 2095, to make described catch 2091 move up and down, thus control being communicated with or not being communicated with of described substrate transfer door 204a and described pad openings 208a.
Further, described final controlling element is cylinder 2094.Particularly, such as, when cylinder 2094 whole compression time, because a section of upper backup pad 2093 is fixed on chamber sidewall 204, therefore can not there is relative displacement in this upper backup pad 2093.Cylinder 2094 shrinks, i.e. smaller volume, and therefore displacement upwards occurs lower supporting plate 2095, and bellows 2096 also shrinks in order to the contraction adapting to cylinder 2094, i.e. smaller volume.Therefore, support column 2092 is whole upwards to be promoted, and vertical moving upward and drive catch 2091 also to move upward occurs, now thinks that catch 2091 is just blocked between pad openings 208a and substrate transfer door 204a.In like manner, when cylinder 2094 is whole dilate time, drive lower supporting plate 2095 move downward vertically, bellows 2096 also produces stretching to adapt to dilating of cylinder 2094.Moving downward vertically of lower supporting plate 2095, drives support column 2092 also move vertically downward and drive catch 2091 also to move downward, now thinks that catch 2091 declines thus is no longer barred between pad openings 208a and substrate transfer door 204a.
It will be appreciated by those skilled in the art that liner 208 because process requirement in plasma etch chamber room, usually with heating function.As shown in Figure 1, a heater 210 is provided with around ring liner 208 above the top cover 203 of plasma etch chamber room 200, heater 210 can homogeneous heating liner 208, to avoid polymer deposition on liner, and also in order to ensure that the ambient temperature around substrate W is also even.But due to actual liner 208 having opening 208a, opening 208a does not but have temperature to control, thus the uneven of substrate W ambient temperature can be caused and affect the inhomogeneities of process results.Therefore mechanical isolation device 209 provided by the invention has temp. control function, and temperature control equipment T can be consistent with the temperature on liner 208 by the catch 2091 in mechanical structure 6, thus ensures the uniformity of substrate W ambient temperature.
Fig. 3 is the structural representation of the temperature control equipment of the mechanical isolation device of plasma etch chamber room according to the present invention's specific embodiment.As shown in Figure 3, described mechanical isolation device 209 also comprises temperature control equipment T.Further, the support column 2092 of mechanical isolation device 209 is that heat conducting material is made, and typically, is made up of metallic aluminium.Therefore, temperature control equipment T can transmit temperature by support column 2092 to catch 2091, thus reaches goal of the invention of the present invention.
Further, temperature control equipment T comprises coolant circulation unit 211 further, is connected to described bellows 2096 respectively by least two coolant ducts 2097.Wherein, in the present embodiment, described coolant duct 2097 comprises coolant inlet pipe 2097a and cooling fluid efferent duct 2097b particularly, coolant inlet pipe 2097a is used for transmitting cooling fluid to bellows 2096 from coolant circulation unit 211, because support column 2092 is through bellows 2096, therefore cooling fluid can cooled supports post 2092 utilize the heat conductivity of support column 2092 to reduce the temperature of catch 2091.Cooling fluid efferent duct 2097b is used for reclaiming cooling fluid from bellows 2096, and is transmitted back to coolant circulation unit 211, and coolant circulation unit 211 regenerates cooling fluid, so moves in circles and the temperature of catch 2091 can be reduced to predetermined temperature.
Wherein, be connected with heater 2012 below described support column 2092, described support column 2092 is connected by some metal wires 2098 with heater 2012.In the present embodiment, described heater 2012 is supply unit, and it by described metal wire 2098 to described support column 2092 transferring heat, thus can heat described catch 2091.
As shown in Figure 3, described heater 212 and described coolant circulation unit 211 are also connected to a control device 213, and described control device 213 is for controlling the work of heater 212 and described coolant circulation unit 211 thus the temperature of mechanical isolation device described in Comprehensive Control.
As shown in the drawing, bellows 2096 is vacuum, the vacuum of chamber interior and outside air can be separated, and simultaneously for transmitting the heat that produces from heater 2012 to mechanical catch 2091, thus realizes the heating to catch 2091.Meanwhile, when catch 2091 is overheated, heater 2012 stops heating, is taken away by the heat on catch 2091 by the cooling fluid flowing through coolant inlet pipe 2097a and cooling fluid efferent duct 2097b.
Further, the temperature of described catch 2091 is needed to set according to concrete processing procedure by described control device 213.
As shown in Fig. 2 a ~ Fig. 2 b, according to a specific embodiment of the present invention, the shape of described catch 2091 is arcuate stream line structure, and in uneven thickness, (not shown) on the particle that described support column 2092 is connected to described catch.Further, the shape of described catch 2091 and particle thereof should be determined according to the size of the shape of described plasma etch chamber room 200 and substrate W.It will be appreciated by those skilled in the art that the chamber of plasma etch chamber room 200 is cylindricalitys, its cross section is similar square, and substrate W is circular, the somewhere space of catch 2091 between substrate W and chamber sidewall.Because locus is limited, the strong point between support column 2092 and catch 2091 can not be positioned near the horizontal mid point of catch 2091, and is not positioned at mid point at the condition lower support point of catch 2091 uniform quality, may cause inclination.Therefore, catch 2091 is creatively designed to fairshaped by the present invention, and by particle dagger 2092 being connected to described catch in uneven thickness.As shown in Fig. 2 a ~ Fig. 2 b, the particle of catch 2091 can move to the position of catch 2091 horizontal area very side, thus for chamber design leaves Maximum Space.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.In addition, any Reference numeral in claim should be considered as the claim involved by restriction; " comprise " word and do not get rid of device unlisted in other claim or specification or step; The word such as " first ", " second " is only used for representing title, and does not represent any specific order.
Claims (12)
1. the mechanical isolation device for plasma processing apparatus, it is arranged between the substrate transfer door of plasma processing apparatus and liner, wherein, described substrate transfer door is arranged on the sidewall of described plasma processing apparatus, described liner is ring-type, and it extends into chamber interior and to be arranged at above described substrate around above the top cover of described plasma processing apparatus, and described liner is provided with an opening, wherein, described mechanical isolation device comprises:
Catch, its shape can block the opening of described substrate transfer door and described liner completely, is connected with a support column below described catch;
Retractor device, described support column is through described retractor device;
Upper backup pad, it is arranged at above described bellows, and its other end is fixed in chamber sidewall;
Lower supporting plate, it is arranged at below described bellows;
Be arranged at the final controlling element between described upper backup pad and described lower supporting plate, described final controlling element can move up and down, and drives support column to move up and down by described lower supporting plate, moves up and down to make described catch, thus control whether being communicated with of described substrate transfer door and described pad openings
Wherein, be connected with heater below described support column, described support column is connected by metal wire with heater.
2. mechanical isolation device according to claim 1, is characterized in that, described retractor device comprises bellows.
3. mechanical isolation device according to claim 1, is characterized in that, described mechanical isolation device also comprises a coolant circulation unit, and it is connected to described final controlling element respectively by coolant inlet pipe and cooling fluid efferent duct.
4. mechanical isolation device according to claim 3, it is characterized in that, described heater and described coolant circulation unit are also connected to a control device, and described control device is for controlling the work of heater and described coolant circulation unit thus controlling the temperature of the catch of described mechanical isolation device.
5. mechanical isolation device according to claim 4, is characterized in that, the temperature of described catch is needed to set according to concrete processing procedure by described control device.
6. mechanical isolation device according to claim 1, is characterized in that, described heater is supply unit, and it by described metal wire to described support column transferring heat, thus can heat described catch.
7. mechanical isolation device according to claim 1, is characterized in that, described final controlling element is cylinder.
8. mechanical isolation device according to claim 1, is characterized in that, the shape of described catch is arcuate stream line structure, and in uneven thickness, and described support column is connected on the particle of described catch.
9. mechanical isolation device according to claim 1, is characterized in that, the shape of described catch and particle thereof should be determined according to the size of the shape of described plasma processing apparatus and substrate.
10. mechanical isolation device according to claim 1, is characterized in that, described support column is made up of heat conducting material.
11. mechanical isolation devices according to claim 1, it is characterized in that, described support column is made of aluminum.
12. 1 kinds of plasma processing apparatus, is characterized in that, described plasma processing apparatus comprises the mechanical isolation device described in any one of claim 1 to 11.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310596754.3A CN104658845B (en) | 2013-11-22 | 2013-11-22 | Plasma processing apparatus and its isolating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310596754.3A CN104658845B (en) | 2013-11-22 | 2013-11-22 | Plasma processing apparatus and its isolating device |
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| CN104658845A true CN104658845A (en) | 2015-05-27 |
| CN104658845B CN104658845B (en) | 2017-07-28 |
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| CN201310596754.3A Active CN104658845B (en) | 2013-11-22 | 2013-11-22 | Plasma processing apparatus and its isolating device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105067599A (en) * | 2015-08-05 | 2015-11-18 | 南京闻智生物科技有限公司 | Chemiluminescence immune detection kit for detecting pro-gastrin-releasing peptide |
| WO2019205337A1 (en) * | 2018-04-24 | 2019-10-31 | 君泰创新（北京）科技有限公司 | Isolation device of precipitation chamber |
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| US20130105085A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Plasma reactor with chamber wall temperature control |
| US20130220550A1 (en) * | 2012-02-29 | 2013-08-29 | Semes Co., Ltd. | Plasma boundary limiter unit and apparatus for treating substrate |
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| US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
| CN101809724A (en) * | 2007-09-29 | 2010-08-18 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105067599A (en) * | 2015-08-05 | 2015-11-18 | 南京闻智生物科技有限公司 | Chemiluminescence immune detection kit for detecting pro-gastrin-releasing peptide |
| WO2019205337A1 (en) * | 2018-04-24 | 2019-10-31 | 君泰创新（北京）科技有限公司 | Isolation device of precipitation chamber |
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| CN104658845B (en) | 2017-07-28 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |