TW201638258A - Adhesive sheet and manufacturing method for semiconductor apparatus - Google Patents

Abstract

An adhesive sheet (10) according to the present invention comprises a first region (11) to which an adherend is bonded and a second region (12) provided on an outer periphery of the first region (11), wherein a tensile modulus of elasticity of the first region (11) is smaller than a tensile modulus of elasticity of the second region (12). The adhesive sheet (10) comprises a base film (13) and an adhesive layer (14) laminated on the base film (13), wherein the adherend is a plurality of semiconductor chips (CP), and wherein the first region (11) is provided in a central portion of the sheet in a planar view of the adhesive sheet (10).

Description

Adhesive sheet and method of manufacturing semiconductor device

The present invention relates to an adhesive sheet and a method of manufacturing the same.

In recent years, there has been progress in miniaturization, weight reduction, and high functionality of electronic equipment. Semiconductor devices mounted on electronic devices are also required to be smaller, thinner, and higher in density. The semiconductor wafer is in a state of being mounted on a package close to its size. Such a package also has a condition called a Chip Scale Package (CSP). As one of the processes for manufacturing the CSP, a Wafer Level Package (WLP) can be cited. In the WLP, before the individualization by dicing, an external electrode or the like is formed on the wafer circuit formation surface, and the package including the wafer is finally diced to be individualized. Examples of the WLP include a fan-in type and a fan-out type. In a fan-out type WLP (hereinafter abbreviated as FO-WLP), the semiconductor wafer is covered with a sealing member so as to be a region larger than the wafer size, thereby forming a semiconductor wafer sealing body, not only in the semiconductor wafer. The circuit surface forms a rewiring layer and an external electrode even in the surface region of the sealing member.

For example, in Document 1 (International Publication No. 2010/058646), A semiconductor package formed by a plurality of semiconductor wafers that are individualized from a semiconductor wafer, leaving a circuit forming surface thereof, surrounding the periphery by using a mold member to form an expanded wafer, and extending the rewiring pattern over a region outside the semiconductor wafer Production method. In the manufacturing method described in Document 1, before the individual semiconductor wafers are surrounded by the mold member, the adhesive tape for expansion is modified, and the adhesive tape is stretched to expand the distance between the plurality of semiconductor wafers.

However, in the case of an existing adhesive sheet such as a stretched adhesive tape, in order to enlarge the interval between the plurality of semiconductor wafers, the portion where the adhesive sheet is caught is largely stretched, and the region where the plurality of semiconductor wafers are bonded is not sufficiently stretched.

SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive sheet which is easy to extend in a desired region when the sheet is stretched, and a method of manufacturing a semiconductor device using the same.

According to the same aspect of the present invention, an adhesive sheet can be provided, comprising: a first region, a bonding adhesive; and a second region disposed on an outer circumference of the first region; and a tensile modulus of the first region Less than the tensile modulus of the second region.

In the extension work of the stretched adhesive sheet, the second region which is disposed on the outer periphery of the first region can be grasped and stretched by the grip member or the like. According to the above-described adhesive sheet of the present invention, the tensile modulus of the first region is smaller than the tensile modulus of the second region. When the adhesive sheet is stretched, the extension of the second region becomes smaller than the extension of the first region.

Therefore, according to the state of the present invention, it is possible to provide an adhesive sheet in which a desired region, that is, a first region, is easily extended when the second region of the adhesive sheet is grasped and stretched.

In the same state of the present invention, the substrate film and the adhesive layer are laminated on the base film; the adhesive is a plurality of semiconductor wafers; and the first region is formed in a plan view of the adhesive sheet It is preferable to set it in the center part of a sheet.

According to this aspect, a plurality of semiconductor wafers can be bonded to the adhesive layer corresponding to the portion of the first region. When a plurality of semiconductor wafers are bonded to the first region of the adhesive sheet, and the second region is grasped and stretched, the desired region, that is, the first region of the bonded plurality of semiconductor wafers is easily extended, so that the plurality of semiconductor wafers can be greatly expanded interval.

In the same aspect of the invention, in the plan view of the adhesive sheet, the first region and the second region are each formed in a substantially rectangular shape; and the slits are preferably provided in the fourth region of the second region.

According to this aspect, the four turns of the second region are provided with slits.

In the expansion project, the second region of the adhesive sheet is grasped by a grip member or the like, and the adhesive sheet is stretched in either one of the first direction and the second direction orthogonal to the first direction. For example, when the second region having a substantially rectangular shape is divided into four portions by the slit of the four turns, in the expansion project, the respective portions are individually grasped and stretched toward the force in the direction outside the sheet. By stretching, the second region is separated by a slit formed in its four turns. Therefore, the second region can be stretched by grasping the separated portions, easily extending in the first direction, and at least either of the second directions.

Therefore, when the adhesive sheet is stretched in at least one of the first direction and the second direction, the second region is separated into a plurality of portions with the slit of the four turns as a margin, so that the first region is easily changed.

Further, even if both the first direction and the second direction are stretched, the force which is stretched in the first direction and the force which is stretched in the second direction are also separated in the portions separated by the slits of the four turns of the second region. Will not be synthesized. For each of the separated portions in the second region, a force that is stretched in the first direction or a force that is stretched in the second direction is applied. Therefore, it is easy to individually control the force applied to the first direction for the first region and the force applied to the second direction.

Further, in the present specification, the state in which the adhesive sheet is substantially rectangular is not limited to the case of a strict rectangular shape. For example, the roughly rectangular shape is not limited to a square or a rectangle, and may be a shape having a circular arc at a corner or a shape in which a part of the corner is cut.

In the same state of the present invention, the slit is provided in the four sides of the second region, and it is preferable to provide one or more slits on the four sides of the second region.

According to this aspect, one or more slits are provided on the four sides of the second region.

In the expansion project, the second region of the adhesive sheet is grasped by a grip member or the like, and the adhesive sheet is stretched in either one of the first direction and the second direction orthogonal to the first direction. For example, the second region having a substantially rectangular shape is divided into four portions by the slit of the four turns, and the slits formed on the sides of the four portions are further divided into a plurality of portions, and in the expansion project, individual Grab the parts and stretch them with a force toward the outside of the sheet. By stretching, the first The two regions are separated by a plurality of incisions formed on the four sides thereof into a plurality of portions. Therefore, the second region can be stretched by grasping the separated portions, easily extending in the first direction, and at least either of the second directions.

Therefore, when the adhesive sheet is stretched in at least one of the first direction and the second direction, the second region is separated into a plurality of portions with the four-sided slit as a margin, so that the first region is easily changed.

Further, since each side of the second region is separated by the slit, it is easy to adjust the tensile force in response to the position of each side. For example, the tensile force at the center of the side portion is reduced, the tensile force at the end portion of the side portion is increased, and the tensile force can be adjusted in accordance with the degree of extension of the first region.

In the same aspect of the invention, in the plan view of the adhesive sheet, the first region is formed in a substantially rectangular shape, and the second region is preferably formed in a substantially circular shape.

According to this aspect, the first region is formed in a substantially rectangular shape; and the second region is formed in a substantially circular shape.

The adhesive sheet having the above-described shape is, for example, suitable for use in an expansion project using a spacer having a ring-shaped annular frame and a substantially rectangular-shaped spacer.

Specifically, first, the second region of the substantially circular shape of the adhesive sheet is held by an annular ring frame. Next, a spacer having a planar shape in which the support surface is substantially the same shape as the first region is passed through the inner side of the ring frame. When the ring frame is lowered, and the height of the support surface of the spacer is relatively higher than the height of the ring frame, the first region of the substantially rectangular shape exposed on the inner side of the ring frame is raised by the spacer, and the first of the adhesive sheets The area is orthogonal to the thickness direction The direction to the outside is expanded.

At this time, the extension of the second region is relatively small compared to the extension of the first region, so that the first region in which the elastic modulus is selectively stretched is extended, so that the first region is relatively easy to extend.

Further, in the present specification, the state in which the adhesive sheet is substantially rounded is not limited to the case of a strict circular shape. For example, a roughly circular shape is not only a perfect circle but also a shape such as an ellipse. Further, in the polygon, the number of the corners is large, and the shape in which the length of each side is relatively short is also included in the substantially circular shape.

Further, in the present specification, the first region and the support surface of the spacer are in substantially the same shape, and it is not strictly the same shape. For example, the outer shape of the spacer may be different as long as it is larger than the area where the plurality of semiconductor wafers are bonded.

In the same aspect of the invention, the first region and the second region are preferably separated by four arcs curved toward the inner side of the sheet in a plan view of the adhesive sheet.

According to this aspect, the first area and the second area are separated by four arcs curved toward the inner side of the sheet.

The adhesive sheet having the above-described shape is, for example, suitable for use in an expansion project using a spacer having a ring-shaped annular frame and a substantially rectangular-shaped spacer.

Specifically, first, the second region of the substantially circular shape of the adhesive sheet is held by an annular ring frame. Next, a spacer having a planar shape in which the support surface is substantially the same shape as the first region is passed through the inner side of the ring frame. The first region is raised by the spacer, and the first region of the adhesive sheet is orthogonal to the thickness direction. The direction toward the outside is expanded. At this time, the arcs separating the first region and the second region are deformed into a nearly straight shape by stretching. As a result, the first region in the expanded state is in a shape close to a rectangle, so that the interval between the plurality of semiconductor wafers can be more evenly extended.

In the same aspect of the present invention, the reinforcing member is bonded to a portion corresponding to the second region of the adhesive layer; and the tensile modulus of the reinforcing member is greater than the tensile modulus of the substrate film. It is better.

According to this aspect, there is further provided a reinforcing member which is bonded to a portion of the second region corresponding to the adhesive layer. The tensile modulus of the reinforcing member is greater than the tensile modulus of the substrate film. A reinforcing member having a large tensile modulus is provided in a portion corresponding to the second region, and the tensile modulus of the second region is largely changed from the tensile modulus of the first region composed of the base film. As a result, it is possible to provide an adhesive sheet in which the tensile elastic modulus of the first region is smaller than the tensile elastic modulus of the second region.

In the same state of the present invention, the pressure-sensitive adhesive layer of the second region preferably contains an energy ray-curable adhesive which is hardened by irradiation with an energy ray.

According to this aspect, the adhesive layer of the second region contains an energy ray-curable adhesive which is hardened by irradiation with an energy ray. The tensile modulus of the second region is greater than the tensile modulus of the first region, and contains more of the component of the hardened energy ray-curable adhesive. As a result, it is possible to provide an adhesive sheet in which the tensile elastic modulus of the first region is smaller than the tensile elastic modulus of the second region.

Further, according to this aspect, the energy ray-curable adhesive is hardened in the adhesive layer in the region where the energy ray is irradiated, and the tensile modulus of the irradiated region is hardened. It becomes larger and forms a second area. That is, according to the state, the second region can be formed in response to the region where the energy ray is irradiated. For example, the first region and the second region can be formed in accordance with the size and number of the adherends bonded to the first region, the range in which the second region is grasped, and the like. Therefore, the adhesive sheet having a high degree of freedom in the applicable process can be used.

In the same state of the present invention, the tensile modulus of the first region is 30 MPa or more and 1000 MPa or less, and the tensile modulus of the second region is preferably 100 MPa or more and 6000 MPa or less.

According to this aspect, the tensile modulus of the first region is 30 MPa or more and 1000 MPa or less; and the tensile modulus of the second region is 100 MPa or more and 6000 MPa or less. When the tensile modulus of elasticity of the first region and the tensile modulus of the second region are within the above ranges, it is possible to provide an adhesive sheet suitable for use in an expansion project.

According to the state of the present invention, there is provided a method of fabricating a semiconductor device comprising: bonding the wafer to the first region of the adhesive sheet of the present invention; and bonding the wafer to the adhesive sheet by dicing An individualization process for forming a plurality of semiconductor wafers; and maintaining the second region of the adhesive sheet and stretching the adhesive sheet to expand a space in which the plurality of semiconductor wafers bonded to the first region are spaced apart from each other.

In the method of manufacturing a semiconductor device of the same state of the present invention, an adhesive sheet in the same state as the above-described invention is used.

After the wafer bonded to the first region of the adhesive sheet is individualized by cutting to form a plurality of semiconductor wafers, the interval between the plurality of semiconductor wafers can be greatly expanded by holding the second region and stretching the adhesive sheet.

According to the above-described manufacturing method of the semiconductor device of the present invention, by picking up a plurality of semiconductor wafers formed by dicing, it is possible to greatly expand the plurality of semiconductor wafers by re-arranging the re-arrangement on the supporting member via the expansion interval. interval. Therefore, the adhesive sheet of the above-described state of the present invention has excellent suitability for the process of WLP, and particularly excellent suitability for the process of the fan-out type wafer level package.

According to the same aspect of the present invention, a method of manufacturing a semiconductor device comprising: a process of forming a plurality of semiconductor wafers by individualizing a wafer bonded to a first adhesive sheet by dicing; and transferring the plurality of semiconductor wafers a process of the first region of the adhesive sheet of the present invention; a process of peeling off the first adhesive sheet; and holding the second region of the adhesive sheet and stretching the adhesive sheet to expand and bond the aforementioned first region The process of separating a plurality of semiconductor wafers from each other.

In the method of manufacturing a semiconductor device of the same state of the present invention, an adhesive sheet in the same state as the above-described invention is used.

The plurality of semiconductor wafers formed by cutting on the first adhesive sheet are transferred to the first region of the adhesive sheet of the present invention, and after the first adhesive sheet is peeled off, the second region is stretched and the adhesive sheet is stretched. Expanding the spacing between the plurality of semiconductor wafers.

In the same state of the present invention, it is preferable to stretch the adhesive sheet and to expand the interval between the plurality of semiconductor wafers, and to leave the circuit surface of the plurality of semiconductor wafers and cover the sealing surface with the sealing member.

According to this aspect, in addition to the interval between the plurality of semiconductor wafers, the sealing member can be used to cover the plurality of semiconductor wafers. And, based on In this manner, the individualized semiconductor wafers are not required to be re-arranged from the adhesive sheet to the other adhesive sheet or the support by pick and place, and can be covered by the sealing member. Therefore, according to this aspect, the engineering of the WLP process can be simplified.

1‧‧‧Semiconductor package

3‧‧‧Blocking body

3A‧‧‧ face

5‧‧‧Rewiring

5A‧‧‧External electrode pads

6‧‧‧External terminal electrode

10‧‧‧Adhesive tablets

10A‧‧‧Adhesive tablets

10B‧‧‧Adhesive film

10C‧‧‧Adhesive film

10D‧‧‧Adhesive tablets

11‧‧‧First area

11A‧‧‧First Area

11B‧‧‧First area

11C‧‧‧First Area

11D‧‧‧First Area

12‧‧‧Second area

12A‧‧‧Second area

12B‧‧‧Second area

12C‧‧‧Second area

12D‧‧‧Second area

13‧‧‧Substrate film

13A‧‧‧ first side

13B‧‧‧ second side

14‧‧‧Adhesive layer

14A‧‧‧Adhesive layer

14B‧‧‧Adhesive layer

15‧‧‧Reinforcing components

16‧‧‧Incision

17‧‧‧Incision

18‧‧‧ arc

30‧‧‧Blocking components

41‧‧‧First insulation

42‧‧‧Second insulation

50‧‧‧ spacer

60‧‧‧Support means

61‧‧‧Support components

61A‧‧‧Ditch

70‧‧‧Interval

70A‧‧‧Support surface

80‧‧‧Linear motor

100‧‧‧First cutting piece

101‧‧‧First area

102‧‧‧Second area

104‧‧‧Adhesive layer

111‧‧‧ vertex

112‧‧‧ vertex

113‧‧‧ vertex

114‧‧‧ vertex

121‧‧‧ vertex

122‧‧‧ vertex

123‧‧‧ vertex

124‧‧‧ vertex

200‧‧‧First transfer sheet

203‧‧‧Second substrate film

204‧‧‧Second Adhesive Layer

300‧‧‧Second cut piece

400‧‧‧Second transfer sheet

401‧‧‧First area

402‧‧‧Second area

CP‧‧‧Semiconductor wafer

M1‧‧‧ first direction

M2‧‧‧ second direction

RF‧‧‧ ring frame

W‧‧‧Semiconductor Wafer

W1‧‧‧ circuit surface

W2‧‧‧ circuit

W3‧‧‧Back

W4‧‧‧Internal terminal electrode

Fig. 1A is a view showing the adhesive sheet of the first embodiment.

Fig. 1B is a view showing the adhesive sheet of the first embodiment.

Fig. 2 is a cross-sectional view showing a method of manufacturing an adhesive sheet according to a second embodiment.

Fig. 3 is a view for explaining an adhesive sheet according to a third embodiment.

Fig. 4 is a view for explaining an adhesive sheet according to a fourth embodiment.

Fig. 5 is a side view of the spacer device of the fourth embodiment.

Fig. 6 is a view for explaining an adhesive sheet according to a fifth embodiment.

Fig. 7A is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 7B is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 7C is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 8A is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 8B is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 9 is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 10A is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 10B is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 10C is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 11A is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 11B is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 11C is a cross-sectional view showing a method of manufacturing the semiconductor device of the sixth embodiment.

Fig. 12A is a cross-sectional view showing a method of manufacturing the semiconductor device of the seventh embodiment.

Fig. 12B is a cross-sectional view showing a method of manufacturing the semiconductor device of the seventh embodiment.

Fig. 12C is a cross-sectional view showing a method of manufacturing the semiconductor device of the seventh embodiment.

Fig. 13A is a cross-sectional view showing a method of manufacturing the semiconductor device of the seventh embodiment.

Fig. 13B is a cross-sectional view showing a method of manufacturing the semiconductor device of the seventh embodiment.

[First Embodiment]

Hereinafter, an adhesive sheet according to the first embodiment of the present invention will be described.

[adhesive sheet]

In Fig. 1A, a plan view of the adhesive sheet 10 of the present embodiment is disclosed, and Fig. 1B shows a cross-sectional view of the adhesive sheet 10.

As shown in FIG. 1A, the adhesive sheet 10 of the present embodiment includes a first region 11 and a second region 12 provided on the outer circumference of the first region 11. In the first region 11, as the adherend, the semiconductor wafer CP is bonded. The adhesive sheet 10 of FIG. 1A is in plan view, and the first region 11 and the second region 12 are each formed in a substantially rectangular shape. The shape of the adhesive sheet 10 in plan view can be said to be provided on the outer peripheral side of the substantially rectangular first region 11 provided at the central portion of the sheet, and the frame-shaped second region 12 is provided.

Further, as shown in FIG. 1B, the adhesive sheet 10 has a base film 13 and an adhesive layer 14. The adhesive layer 14 is laminated on the base film 13. The semiconductor wafer CP is bonded to the adhesive layer 14 of the first region 11. A reinforcing member 15 is bonded to the position of the second region 12 corresponding to the adhesive layer 14.

Furthermore, in FIG. 1B, the adhesive layer 14 distinguishes between the adhesive layer 14A of the first region 11 and the adhesive layer 14B of the second region 12.

[Substrate film]

The material of the base film 13 is not particularly limited. Examples of the material of the base film 13 include a polyvinyl chloride resin, a polyester resin (polyethylene terephthalate, etc.), an acrylic resin, a polycarbonate resin, a polyethylene resin, a polypropylene resin, and an acrylonitrile. a butadiene-styrene resin, a polyimide resin, a polyurethane resin, a polystyrene resin, or the like.

The tensile modulus of the base film 13 is preferably 30 MPa or more and 1000 MPa or less. Further, the tensile modulus of elasticity in the present specification is measured using a dynamic mechanical viscoelastic analyzer in accordance with JIS K7161 and JIS K7127.

[adhesive layer]

The adhesive contained in the adhesive layer 14 is not particularly limited and can be widely applied. Examples of the adhesive to be contained in the pressure-sensitive adhesive layer 14 include a rubber-based, acrylic-based, siloxane-based, polyester-based, and urethane-based adhesive. Further, the type of the adhesive is selected in consideration of the use and the type of the adhered adhesive.

[reinforcing member]

The material of the reinforcing member 15 is not particularly limited as long as it is larger than the tensile modulus of the base film 13 .

Examples of the material of the reinforcing member 15 include a polyvinyl chloride resin, a polyester resin (polyethylene terephthalate, etc.), an acrylic resin, a polycarbonate resin, a polyethylene resin, a polypropylene resin, and an acrylic eye. Butadiene-styrene resin, polyimide resin, polyurethane resin, and polyphenylene Alkene resin, etc.

The tensile modulus of the reinforcing member 15 is preferably 100 MPa or more and 6000 MPa or less.

In the adhesive sheet 10 of the present embodiment, the tensile modulus of elasticity of the first region 11 is smaller than the tensile modulus of the second region 12.

In the adhesive sheet 10 of the present embodiment, the reinforcing member 15 is bonded to the position of the second region 12 corresponding to the adhesive layer 14, and the tensile modulus of the first region 11 and the stretching of the second region 12 are achieved. The relationship between the elastic rate.

The tensile modulus of the first region 11 is preferably 30 MPa or more and 1000 MPa or less. Among them, the tensile modulus of the first region 11 is preferably 60 MPa or more and 600 MPa or less, and more preferably 80 MPa or more and 450 MPa or less.

The tensile modulus of the second region 12 is preferably 100 MPa or more and 6000 MPa or less. Among them, the tensile modulus of the second region 12 is preferably 450 MPa or more and 4,500 MPa or less, and more preferably 120 MPa or more and 1200 MPa or less.

When the first region and the second region have a laminated structure, the tensile modulus of each region is measured in the laminated state. For example, the tensile modulus of elasticity of the second region 12 of the adhesive sheet 10 of the present embodiment is a value measured in a laminated state of the base film 13, the adhesive layer 14, and the reinforcing member 15.

[Method of Manufacturing Adhesive Sheet]

The method of manufacturing the adhesive sheet 10 is not particularly limited.

For example, the adhesive sheet 10 is manufactured through the following works.

First, an adhesive is applied onto the first surface 13A of the base film 13 to form a coating film. Next, the coating film is dried to form the adhesive layer 14. Then, the reinforcing member 15 which is larger than the tensile modulus of the base film 13 is bonded to the portion corresponding to the second region 12 of the adhesive layer 14. By the above-described engineering, the adhesive sheet 10 having the reinforcing member 15 bonded to the portion of the second region 12 of the corresponding adhesive layer 14 can be obtained.

In the expansion of the stretched adhesive sheet 10, the second region 12 provided on the outer periphery of the first region 11 can be grasped and stretched by the grip member or the like. According to the present embodiment, the tensile modulus of elasticity of the first region 11 is smaller than the tensile modulus of the second region 12. When the adhesive sheet 10 is stretched, the extension of the second region 12 becomes smaller than the extension of the first region 11. Therefore, according to the present embodiment, it is possible to provide the adhesive sheet 10 in which the desired region, that is, the first region, is easily extended when the second region of the adhesive sheet is grasped and stretched.

According to this aspect, the plurality of semiconductor wafers CP can be bonded to the adhesive layer 14 corresponding to the portion of the first region 11. When the plurality of semiconductor wafers CP are bonded to the first region 11 of the adhesive sheet 10 and the second region 12 is grasped and stretched, the desired region, that is, the first region 11 of the bonded plurality of semiconductor wafers CP is easily extended, so that The spacing of the plurality of semiconductor wafers CP from each other is expanded.

Further, according to this aspect, the reinforcing member 15 is further provided, and the reinforcing member 15 is bonded to the portion corresponding to the second region 12 of the adhesive layer 14. The tensile modulus of the reinforcing member 15 is greater than the tensile modulus of the base film 13. The tensile modulus is set for the portion corresponding to the second region 12 In the large reinforcing member 15, the tensile modulus of the second region 12 is changed more than the tensile modulus of the first region 11 composed of the base film 13. As a result, the adhesive sheet 10 in which the tensile modulus of the first region 11 is smaller than the tensile modulus of the second region 12 can be provided.

Further, according to this aspect, the tensile modulus of the first region 11 is 30 MPa or more and 1000 MPa or less, and the tensile modulus of the second region 12 is 100 MPa or more and 6000 MPa or less. When the tensile modulus of elasticity of the first region 11 and the tensile modulus of the second region 12 are within the above ranges, the adhesive sheet 10 suitable for use in expansion engineering can be provided.

[Second embodiment]

Hereinafter, a method of manufacturing an adhesive sheet according to a second embodiment of the present invention will be described.

The method for producing the adhesive sheet 10A of the present embodiment is manufactured through the following processes.

First, an energy ray-curable adhesive is applied onto the first surface 13A of the base film 13 shown in Fig. 2 to form a coating film. Next, the coating film is dried to form the adhesive layer 14. Then, the energy line is irradiated to the portion corresponding to the second region 12A of the adhesive layer 14. The energy ray-curable adhesive contained in the adhesive layer 14B of the second region 12A is cured by irradiation of the energy ray. Further, since the adhesive layer 14A of the first region 11A is not irradiated with the energy ray, the applied energy ray-curable adhesive does not harden. The adhesive layer 14B which is obtainable in the second region 12A through the above-described process contains the adhesion of the energy ray-curable adhesive which is hardened by the irradiation of the energy ray. Sheet 10A.

The energy ray-curable adhesive of the present embodiment is not particularly limited. The energy ray-curable adhesive may be appropriately selected in accordance with the performance of the hardened region to which the formed adhesive layer is to be applied.

In the present specification, the energy line has an energy quantum in an electromagnetic wave or a charged particle line. Examples of the energy rays include ultraviolet rays, electron beams, and the like. Even in the energy line, it is better to handle the ultraviolet rays.

As the energy ray-curable adhesive, for example, an adhesive of a polyfunctional energy ray-curable resin may be mentioned as an acrylic adhesive. Examples of the multifunctional energy ray-curable resin include low molecular weight compounds having a functional group of a plurality of energy ray-polymerizable properties, such as a urethane acrylate oligomer. Further, an adhesive comprising a (meth)acrylate copolymer (Meth) Acrylic acid ester copolymer having a functional group of energy ray polymerizable in a side chain may also be used. As such an energy ray polymerizable functional group, a (meth)acrylyl group ((Meth) Acryloyl group) is preferred. In the present specification, "(meth)acrylate copolymer" is used to indicate at least one of "acrylate copolymer" and "methacrylate copolymer", and other Similar terms are also the same.

The adhesive layer 14 may contain various additives. Examples of the additive include a polymerization initiator, a decane coupling agent, a charge prevention agent, an adhesion-imparting agent, an oxidation inhibitor, an ultraviolet absorber, a light stabilizer, a softener, a filler, and a refractive index modifier. Further, the type of the additive is selected in consideration of the use and the type of the adherend to be bonded.

According to the present embodiment, the adhesive layer 14B of the second region 12A contains an energy ray-curable adhesive which is cured by irradiation with an energy ray. The tensile modulus of elasticity of the second region 12A is greater than the tensile modulus of elasticity of the first region 11A, and is more than the component of the hardened energy ray-curable adhesive. As a result, the adhesive sheet 10A in which the tensile modulus of the first region 11A is smaller than the tensile modulus of the second region 12A can be provided.

Further, according to this aspect, the energy ray-curable adhesive is hardened in the adhesive layer 14B in the region where the energy ray is irradiated, and the tensile elastic modulus of the irradiation region is increased to form the second region 12A. That is, according to this aspect, the second region 12A can be formed in response to the region where the energy ray is irradiated. For example, the first region 11A and the second region 12A can be formed in accordance with the size and number of the adherends bonded to the first region 11A, the range in which the second region 12A is grasped, and the like. Therefore, the adhesive sheet 10A of the present embodiment is Applicable process with high degree of freedom of adhesion.

[Third embodiment]

Hereinafter, an adhesive sheet according to a third embodiment of the present invention will be described.

Fig. 3 is a plan view showing the adhesive sheet 10B of the present embodiment.

As shown in Fig. 3, the adhesive sheet 10B of the present embodiment is formed in a plan view, and the first region 11B and the second region 12B are each formed in a substantially rectangular shape. The shape of the adhesive sheet 10B in plan view can be said to be the outer peripheral side of the substantially rectangular first region 11B, and the frame-shaped second region 12B is provided.

The adhesive sheet 10B of the present embodiment is attached as shown in FIG. 1B. On the agent layer, the structure of the adhesive reinforcing member may also be used. Moreover, the adhesive layer of the second region shown in FIG. 2 may have a structure of an energy ray-curable adhesive which is cured by irradiation with an energy ray.

The adhesive sheet 10B of the present embodiment is attached to the four corners of the second region 12B, and is provided with a slit 16.

The slit 16 formed in the four turns is formed on the line connecting the apex 121 of the second region 12B to the apex 111 of the first region 11B closest to the apex 121. Further, the other slits 16 formed in the four turns are also formed on the other vertices 122 connecting the second regions 12B, and on the straight lines closest to the other vertices 112 of the first region 11B of the apexes 122, and connecting the vertices 123 and most It is preferable that a line close to the vertex 113 of the first region 11B of the vertex 123 and a line connecting the vertex 124 to the vertex 114 of the first region 11B closest to the vertex 124 are preferable.

Further, the depth of the slit 16 formed in the four turns is preferably formed so as to reach the back surface of the base film from the surface layer of the adhesive layer. Further, if the expansion process can be utilized, the second region 12B is separated by the slit 16, and the slit 16 does not necessarily need to be formed to a depth from the surface layer of the adhesive layer to the back surface of the base film. Further, the adhesive sheet 10B can be separated into a plurality of portions by the slit 16 with the slit 16 as a margin.

Further, the adhesive sheet 10B of the present embodiment is further provided with one or two or more slits 17 on the four sides of the second region 12B.

The slit 17 formed on the four sides is in a direction perpendicular to the longitudinal direction of the side of the slit object, from the outer circumference of the second region 12B to the first region. The manner of 11B and the margin of the second region 12B is preferably formed.

Further, it is preferable that the slits 17 formed on the four sides are formed at equal intervals on the side of the slit object.

Further, the depth of the slits 17 formed on the four sides is preferably formed so as to reach the back surface of the base film from the surface layer of the adhesive layer. Further, if the expansion process is possible, the second region 12B is separated by the slit 17, and the slit 17 does not necessarily need to be formed to a depth from the surface layer of the adhesive layer to the back surface of the base film. Further, the adhesive sheet 10B can be separated into a plurality of portions by the slit 17 with the slit 17 as a margin.

Further, in FIG. 3, three slits 17 are formed on each side of the second region 12B. However, one slit 17 may be provided on each side, and two slits 17 may be provided, or four slits may be provided. The above slit 17 may also be used.

According to the present embodiment, the slit 16 is provided in the four turns of the second region 12B. Further, according to this aspect, one or two or more slits 17 are provided on four sides of the second region 12B.

In the extension project, the second region 12B of the adhesive sheet 10B is grasped by a grip member or the like, and the adhesive sheet 10B is stretched in either the first direction M1 and the second direction M2 orthogonal to the first direction M1. . For example, as in the present embodiment, the substantially rectangular second region 12B is divided into four portions by the slit 16 of the four turns, and the slits 17 formed on the respective sides of the four portions are further divided into plural portions. At the time of expansion, each part was individually grasped and stretched by a force toward the outer side of the sheet. By stretching, the second region 12B is divided by the slit 16 formed in the four sides thereof. from. Further, the second region 12B is separated by a slit 17 formed on the four sides thereof as a margin.

Therefore, when the adhesive sheet 10B is stretched in at least one of the first direction M1 and the second direction M2, the second region 12B is separated by the four-inch slit 16 and the four-sided slit 17 as a margin. Therefore, the first region 11B Changes are easy to extend.

According to the present embodiment, when the second region 12B is separated into a plurality of portions, the force that is stretched in the first direction M1 and the force that is stretched in the second direction M2 are not combined in each of the separated portions, and the same applies. The force of stretching in one direction, or the force of stretching in the second direction. Therefore, it is easy to individually control the force applied to the first direction M1 to the first region 11B and the force applied to the second direction M2. Further, since the respective sides of the second region 12B are separated by the slit 17, it is easy to adjust the tensile force in response to the position of each side. For example, the tensile force at the center portion of the side portion is reduced, the tensile force at the end portion of the side portion is increased, and the tensile force can be adjusted in accordance with the degree of extension of the first region 11B.

[Fourth embodiment]

Hereinafter, an adhesive sheet according to a fourth embodiment of the present invention will be described.

Figure 4 shows a diagram of other aspects of the adhesive sheet.

In the adhesive sheet 10C of the present embodiment, the adhesive sheet 10 of the first embodiment has a shape different from that of the first region and the second region in plan view. Regarding other places, the adhesive sheet 10C is almost the same as the adhesive sheet 10 unless otherwise specified.

The adhesive sheet 10C of the present embodiment is in a plan view, the first region The 11C system is formed in a substantially rectangular shape; the second region 12C is formed in a substantially circular shape. The adhesive sheet 10C of the present embodiment may have a structure in which the reinforcing member is bonded to the adhesive layer shown in Fig. 1B. Moreover, the adhesive layer of the second region shown in FIG. 2 may have a structure of an energy ray-curable adhesive which is cured by irradiation with an energy ray.

The adhesive sheet 10C having the above-described shape is used, for example, in the expansion project using the spacer 50 having a ring-shaped annular frame RF and a substantially rectangular spacer 70 as shown in FIG.

The spacer 50 shown in Fig. 5 is a device for expanding the mutual spacing of the plurality of semiconductor wafers CP.

The spacer 50 is provided with a support means 60, a spacer 70, and a linear motor 80. Support means 60 supports ring frame RF. The spacer 70 supports the plurality of semiconductor wafers CP via the adhesive sheet 10C. The linear motor 80 moves the support means 60 and the spacer 70 to each other, and applies tension to the adhesive sheet 10C.

The support means 60 has a groove 61A that can accommodate the ring frame RF. The support means 60 is provided with a pair of support members 61 supported by the output shaft 80A of the linear motor 80, respectively.

The shape of the spacer 70 in a plan view, that is, viewed from above, is square. The spacer 70 is a support surface 70A having a planar shape that is substantially the same as the area of the first region 11C.

A step of expanding the mutual spacing of the plurality of semiconductor wafers CP in the spacer device 50 described above will be described.

First, in Figure 5, as shown by the solid line, a ring-shaped ring frame The RF holds the substantially circular second region 12C of the adhesive sheet 10C. The ring frame RF holding the adhesive sheet 10C is inserted into the groove 61A of the support member 61.

Next, the linear motor 80 is driven to lower the support member 61, and the spacer 70 is passed through the inner side of the ring frame RF as indicated by a dotted line in FIG. When the support member 61 is lowered, and the height of the support surface 70A of the spacer 70 is relatively higher than the height of the ring frame RF, the substantially rectangular first region 11C exposed inside the ring frame RF is partitioned by the spacer 70. The support surface 70A is raised. By this raising, the first region 11C is expanded in the direction orthogonal to the thickness direction and outward.

At this time, the extension of the second region 12C is relatively small as compared with the extension of the first region 11C, so that the first region 11C having a small elastic modulus can be selectively stretched. Therefore, the interval of the plurality of semiconductor wafers CP bonded to the first region 11C can be greatly expanded.

[Fifth Embodiment]

Hereinafter, an adhesive sheet according to a fifth embodiment of the present invention will be described.

Figure 6 shows a diagram of other aspects of the adhesive sheet.

The adhesive sheet 10D of the present embodiment differs from the first embodiment in that the first and second regions are different in shape from the adhesive sheet 10 of the first embodiment. Regarding other places, the adhesive sheet 10D is almost the same as the adhesive sheet 10 unless otherwise specified.

The adhesive sheet 10D of the present embodiment is in plan view, and the first region 11D and the second region 12D are curved in four arcs 18 toward the inner side of the sheet. Separate. The adhesive sheet 10D of the present embodiment may be a structure in which the reinforcing member is bonded to the adhesive layer shown in Fig. 1B. Moreover, the adhesive layer of the second region shown in FIG. 2 may have a structure of an energy ray-curable adhesive which is cured by irradiation with an energy ray.

In addition, the length and the angle of the four arcs 18 are preferably set appropriately in accordance with the extension characteristics of the base film constituting the adhesive sheet 10D in the MD direction and the extension characteristics in the CD direction.

In the present specification, the term "MD direction" is used as a term indicating a direction parallel to the longitudinal direction of the primary structure of the base film (the direction in which the native structure is produced), and the "CD direction" is used. It is used as a term indicating a direction orthogonal to the MD direction, and is the same as the following. In this specification, MD is an abbreviation for Machine Direction, and CD is an abbreviation for Cross Direction.

According to the present embodiment, the first region 11D and the second region 12D are separated by four arcs 18 that are curved toward the inner side of the sheet.

The adhesive sheet 10D having the above-described shape is suitable for use in the expansion work of the spacer 50 using the ring-shaped ring frame RF and the substantially rectangular-shaped spacer 70 as shown in FIG.

The adhesive sheet 10D is held by an annular ring frame of the spacer so that the spacer passes through the inner side of the ring frame. The first region 11D is raised by the spacer, and the first region 11D of the adhesive sheet 10D is orthogonal to the thickness direction and expanded toward the outer side.

At this time, the circular arc 18 which partitions the first region 11D and the second region 12D becomes a shape close to a straight line by stretching. As a result, the state of expansion Since the one region 11D has a shape close to a rectangle, the interval between the plurality of semiconductor wafers CP can be more evenly extended.

[Sixth embodiment]

Hereinafter, a method of manufacturing a semiconductor device according to a sixth embodiment of the present invention will be described.

In the present embodiment, the adhesive sheet of the above-described embodiment is used as the first dicing sheet 100 to which the semiconductor wafer W is bonded during dicing.

In FIG. 7A, a semiconductor wafer W bonded to a first dicing sheet 100 is disclosed.

The semiconductor wafer W has a circuit surface W1, and a circuit W2 is formed on the circuit surface W1. The first dicing sheet 100 is bonded to the back surface W3 on the side opposite to the circuit surface W1 of the semiconductor wafer W. The semiconductor wafer W is bonded to the first region 101 of the first dicing sheet 100.

The semiconductor wafer W may be, for example, a germanium wafer, and may be a compound semiconductor wafer such as gallium or arsenic. As a method of forming the circuit W2 on the circuit surface W1 of the semiconductor wafer W, a versatile method such as an etching method, a lift-off method, or the like can be given.

The semiconductor wafer W is previously ground to a predetermined thickness, and the back surface W3 is exposed and adhered to the first dicing sheet 100. The method of grinding the semiconductor wafer W is not particularly limited, and examples thereof include a known method using a polishing machine or the like. When the semiconductor wafer W is ground, in order to protect the circuit W2, the surface protection sheet is bonded to the circuit surface W1. The back surface grinding of the wafer is fixed to the circuit surface W1 side of the semiconductor wafer W by a chuck table or the like, that is, the surface protection sheet On the side, the back side of the circuit W2 is not formed by a grinder. The thickness of the semiconductor wafer W after grinding is not particularly limited, and is usually 20 μm or more and 500 μm or less.

The first dicing sheet 100 may be bonded to the semiconductor wafer W and the first annular frame. At this time, the first ring frame and the semiconductor wafer W are placed on the adhesive layer 104 of the second region 102 of the first dicing sheet 100, and are gently pressed and fixed.

[cutting engineering]

In FIG. 7B, a plurality of semiconductor wafers CP held by a first dicing sheet 100 are disclosed.

The semiconductor wafer W held by the first dicing sheet 100 is individualized by dicing to form a plurality of semiconductor wafers CP. For cutting, a cutting device such as a dicing saw is used. The cutting depth at the time of cutting is set to take into consideration the thickness of the semiconductor wafer W, the total thickness of the adhesive layer 104, and the depth of the wear component of the dicing saw.

Further, an interval between the thicknesses of the switching means for cutting the saw blade or the like is formed between the plurality of semiconductor wafers CP which are individualized by the dicing. In the present embodiment, the distance between the semiconductor wafers CP generated by the dicing is set to D.

[Extension Engineering]

In FIG. 7C, a process for explaining the stretching of the first dicing sheet 100 of the plurality of semiconductor wafers CP (the condition called expansion engineering) is disclosed. Figure.

In the extended project, after the semiconductor wafer W to be bonded to the first region 101 is cut into individual semiconductor wafers CP, the second region 102 is grasped to stretch the first dicing sheet 100, and the expansion is bonded to the first wafer 100. The spacing between the plurality of semiconductor wafers CP of the region 101. The method of stretching the first cutting piece 100 in the expansion project is not particularly limited. As a method of stretching the first dicing sheet 100, for example, a dilating ring or a circular expander, a method of stretching the first dicing sheet 100, and a gripping member or the like are used, and the gripping and stretching are located at the A method of cutting the second region 102 at the outer peripheral portion of the sheet 100, and the like.

In the present embodiment, as shown in FIG. 7C, the distance between the semiconductor wafers CP after the expansion process is set to D1. The distance D1 is preferably, for example, 200 μm or more and 5000 μm or less.

[Transfer Engineering]

FIG. 8A is a view for explaining a process of transferring a plurality of semiconductor wafers CP to the first transfer sheet 200 (a condition called a transfer process) after the expansion process.

After the first dicing sheet 100 is stretched and the distance D1 between the plurality of semiconductor wafers CP is expanded, the first transfer sheet 200 is bonded to the circuit surface W1 of the semiconductor wafer CP.

The first transfer sheet 200 has a second base film 203 and a second adhesive layer 204. It is preferable that the first transfer sheet 200 is bonded so that the second adhesive layer 204 covers the circuit surface W1.

The material of the second base film 203 is not particularly limited. Examples of the material of the second base film 203 include a polyvinyl chloride resin, a polyester resin (such as polyethylene terephthalate), an acrylic resin, a polycarbonate resin, a polyethylene resin, and a polypropylene resin. Acrylonitrile-butadiene-styrene resin, polyimide resin, polyurethane resin, and polystyrene resin.

The adhesive contained in the second adhesive layer 204 is not particularly limited and can be widely applied. Examples of the adhesive to be contained in the second adhesive layer 204 include a rubber-based, acrylic-based, siloxane-based, polyester-based, and urethane-based adhesive. Further, the type of the adhesive is selected in consideration of the use and the type of the adhered adhesive.

In FIG. 8B, a plurality of semiconductor wafers CP held by the first transfer sheet 200 after the first dicing sheet 100 is peeled off are disclosed.

After the first transfer sheet 200 is bonded and the first dicing sheet 100 is peeled off, the back surface W3 of the plurality of semiconductor wafers CP is exposed. After the first dicing sheet 100 is peeled off, the distance D1 between the plurality of semiconductor wafers CP stretched by the expansion project is also maintained.

[sealing project]

FIG. 9 is a view for explaining a process of sealing a plurality of semiconductor wafers CP using a sealing member 30 (a condition called a sealing process).

The sealing engineering was implemented after the expansion project. The sealing body 3 is formed by covering the plurality of semiconductor wafers CP with the sealing member 30 by leaving the circuit surface W1. The sealing member 30 is also filled between the plurality of semiconductor wafers CP. In the present embodiment, the circuit surface is covered by the first transfer sheet 200. W1 and circuit W2 can prevent the circuit surface W1 from being covered by the sealing member 30.

By the sealing process, it is possible to obtain the sealing body 3 in which the plurality of semiconductor wafers CP which are spaced apart by a predetermined distance are buried in the sealing member. In the sealing process, the plurality of semiconductor wafers CP are preferably covered by the sealing member 30 while maintaining the distance D1.

The method of covering the plurality of semiconductor wafers CP by the sealing member 30 is not particularly limited. For example, in the mold, a plurality of semiconductor wafers CP are housed in a state in which the first transfer sheet 200 is covered with the circuit surface W1, and a fluid resin material is injected into the mold to cure the resin material.

In addition, a method of placing a sheet-like sealing resin so as to cover the back surface W3 of the plurality of semiconductor wafers CP and heating the sealing resin to embed the plurality of semiconductor wafers CP to the sealing resin may be employed. The material of the sealing member 30 is, for example, an epoxy resin. The epoxy resin used as the sealing member 30 may include, for example, a phenol resin, an elastic material, an inorganic filler, and a curing accelerator.

After the first transfer sheet 200 is peeled off, the surface 3A that is in contact with the circuit surface W1 of the semiconductor wafer CP and the first transfer sheet 200 of the sealing body 3 is exposed.

[Manufacturing Engineering of Semiconductor Packages]

FIGS. 10A, B, and C and FIGS. 11A, B, and C show a diagram for explaining a process of manufacturing a semiconductor package using a plurality of semiconductor wafers CP. This implementation The morphology is preferably included in the manufacturing process of such a semiconductor package.

[Rewiring layer formation project]

In Fig. 10A, a cross-sectional view of the sealing body 3 after peeling off the first transfer sheet 200 is disclosed. In the present embodiment, it is preferable that the sealing body 3 after the first transfer sheet 200 is peeled off and the rewiring layer forming the rewiring layer is formed. In the rewiring layer formation process, rewiring which is connected to the circuit W2 of the plurality of exposed semiconductor wafers CP is formed on the circuit surface W1 and the surface 3A of the sealing body 3. At the time of forming the rewiring, first, an insulating layer is formed on the sealing body 3.

FIG. 10B is a cross-sectional view showing a process for forming the first insulating layer 41 on the circuit surface W1 of the semiconductor wafer CP and the surface 3A of the sealing body 3. The first insulating layer 41 containing an insulating resin is formed to expose the internal terminal electrode W4 of the circuit W2 or the circuit W2 on the circuit surface W1 and the surface 3A. Examples of the insulating resin include a polyimide resin, a polybenzoxazole resin, and a decyl alkane resin. The material of the internal terminal electrode W4 is not limited as long as it is a conductive material, and examples thereof include metals such as gold, silver, copper, and aluminum, and alloys.

In FIG. 10C, a cross-sectional view for explaining the process of forming the rewiring 5 electrically connected to the semiconductor wafer CP sealed by the sealing body 3 is disclosed. In the present embodiment, the rewiring 5 is formed after the formation of the first insulating layer 41. The material of the rewiring 5 is not limited as long as it is a conductive material, and examples thereof include metals such as gold, silver, copper, and aluminum, and alloys. The rewiring 5 can be formed by a known method.

In Fig. 11A, a cross-sectional view for explaining the process of forming the second insulating layer 42 covering the rewiring 5 is disclosed. The rewiring 5 has an external electrode pad 5A for an external terminal electrode. An opening or the like is provided in the second insulating layer 42, and the external electrode pad 5A for the external terminal electrode is exposed. In the present embodiment, the external electrode pad 5A is exposed in the region of the semiconductor wafer CP of the sealing body 3 (the region corresponding to the circuit surface W1) and outside the region (the region corresponding to the surface 3A of the sealing member 30). Moreover, the rewiring 5 is formed on the surface 3A of the sealing body 3 so that the external electrode pads 5A are arranged in an array. In the present embodiment, since the outer electrode pad 5A is exposed outside the region of the semiconductor wafer CP of the sealing body 3, a fan-out type WLP can be obtained.

[Connection work with external terminal electrodes]

FIG. 11B is a cross-sectional view showing a process for connecting the external electrode pad 5A of the sealing body 3 to the external terminal electrode 6. The external terminal electrode 6 such as a solder ball is placed on the external electrode pad 5A exposed from the second insulating layer 42, and the external terminal electrode 6 and the external electrode pad 5A are electrically connected by soldering or the like. The material of the solder ball is not particularly limited, and examples thereof include lead-containing solder and lead-free solder.

[Second cutting project]

Fig. 11C is a cross-sectional view for explaining a process of personalizing the sealing body 3 for connecting the external terminal electrodes 6 (a condition called a second cutting process). In the second cutting process, the sealing body 3 is made of a semiconductor wafer The CP unit is individualized. The method of individualizing the sealing body 3 is not particularly limited. For example, the sealing body 3 can be individualized by the same method as the method of cutting the aforementioned semiconductor wafer W. The engineering system for individualizing the sealing body 3 may be performed by bonding the sealing body 3 to an adhesive sheet such as a dicing sheet.

The semiconductor package 1 of the semiconductor wafer CP unit is manufactured by individualizing the sealing body 3. As described above, the semiconductor package 1 to which the external terminal electrode 6 is connected to the external electrode pad 5A outside the region where the semiconductor wafer CP is fanned is manufactured as a fan-out type wafer level package (FO-WLP).

〔Installation work〕

In the present embodiment, it is preferable to include a semiconductor package 1 to be individualized, and to mount it on a printed wiring board or the like.

According to the present embodiment, the adhesive sheet of the above-described embodiment is used as the first dicing sheet 100 to which the semiconductor wafer W is bonded during dicing.

The semiconductor wafer W bonded to the first region 101 of the first dicing sheet 100 is individualized by dicing, and after forming the plurality of semiconductor wafers CP, the second dicing sheet 100 can be stretched by grasping the second region and expanding the first dicing sheet 100. The spacing between the plurality of semiconductor wafers CP.

Moreover, according to the present embodiment, the plurality of semiconductor wafers CP can be covered by the sealing member 30 in addition to the interval between the plurality of semiconductor wafers CP. Further, according to the present embodiment, it is not necessary to arrange the individual semiconductor wafers one by one from the adhesive sheet to the other adhesive sheet or the support by pick-and-place, and it can be covered by the sealing member. Therefore, according to the present embodiment, the process of the WLP process can be simplified.

[Seventh embodiment]

Hereinafter, a method of manufacturing a semiconductor device according to a seventh embodiment of the present invention will be described.

In the seventh embodiment, the second dicing sheet 300 and the second transfer sheet 400 are used instead of the first dicing sheet 100 and the first transfer sheet 200, and the adhesive sheet of the above-described embodiment is used as the second. The transfer sheet 400 is different from the sixth embodiment. The seventh embodiment is the same as the sixth embodiment, and the description thereof is omitted or simplified.

In FIG. 12A, a semiconductor wafer W bonded to a second dicing sheet 300 (first adhesive sheet) is disclosed.

In the present embodiment, the semiconductor wafer is bonded to the second dicing sheet 300. In the second dicing sheet 300, the adhesive sheet of the above embodiment may be used, and a sheet different from the adhesive sheet of the above embodiment may be used.

[cutting engineering]

In FIG. 12B, a plurality of semiconductor wafers CP held by a second dicing sheet 300 are disclosed.

The semiconductor wafer W held by the second dicing sheet 300 is individualized by dicing to form a plurality of semiconductor wafers CP.

[Transfer Engineering]

FIG. 12C discloses a process for explaining transfer of a plurality of semiconductor wafers CP which are individualized by dicing to the second transfer sheet 400 (something called Figure of the situation of the transfer engineering).

In the present embodiment, the adhesive sheet of the above embodiment is used as the second transfer sheet 400.

After the plurality of semiconductor wafers CP are formed by dicing, the second transfer sheet 400 is bonded to the circuit surface W1 of the semiconductor wafer CP. The plurality of semiconductor wafers CP are bonded to the first region 401 of the second transfer sheet 400.

In FIG. 13A, a plurality of semiconductor wafers CP held by the second transfer sheet 400 after the second dicing sheet 300 is peeled off are disclosed. The plurality of semiconductor wafers CP are transferred to the first region 401 of the second transfer sheet 400.

After the second transfer sheet 400 is bonded and the second dicing sheet 300 is peeled off, the back surface W3 of the plurality of semiconductor wafers CP is exposed. After the second dicing sheet 300 is peeled off, the distance D between the plurality of semiconductor wafers CP generated by the dicing is also preferably maintained.

[Extension Engineering]

FIG. 13B is a view for explaining a process of stretching and holding the second transfer sheet 400 of the plurality of semiconductor wafers CP (a condition called an expansion project).

In the extension project, the second region 402 is grasped, and the second transfer sheet 400 is stretched to expand the interval between the plurality of semiconductor wafers CP bonded to the first region 401.

The method of stretching the second transfer sheet 400 in the expansion project is not particularly limited. As a method of stretching the second transfer sheet 400, for example, a push can be cited. The top annular or circular expander, the method of stretching the second transfer sheet 400, and the gripping member or the like, grasping and stretching the second region 402 located on the outer peripheral portion of the second transfer sheet 400 Method etc.

In the present embodiment, as shown in FIG. 13B, the distance between the semiconductor wafers CP after the expansion process is set to D1. The distance D1 is preferably, for example, 200 μm or more and 5000 μm or less.

According to the present embodiment, the adhesive sheet of the above-described embodiment is used as the second transfer sheet 400 used for transferring the plurality of semiconductor wafers CP which are individualized by dicing, and expanding the interval between the semiconductor wafers CP. .

On the second dicing sheet 300, the plurality of semiconductor wafers CP formed by dicing are transferred to the first region 401 of the second transfer sheet 400, and the second dicing sheet 300 is peeled off. Thereafter, by stretching the second transfer sheet 400 while holding the second region 402, the interval between the plurality of semiconductor wafers CP can be greatly expanded. Further, as in the sixth embodiment, even in the present embodiment, the process of the WLP process can be simplified.

[Modification of Embodiment]

The present invention is not limited by the above embodiments. The present invention encompasses the aspect in which the above-described embodiments are modified in the scope of the object of the invention.

For example, the circuits of the semiconductor wafer W and the semiconductor wafer CP are not limited to the arrangement and shape of the drawings. The connection structure of the semiconductor package 1 to the external terminal electrode 6 and the like are not limited to the above-described embodiments. The style described in the article.

Further, the reinforcing member 15 is bonded to the portion of the second region 12 of the corresponding adhesive layer 14, but the present invention is not limited to this. For example, the reinforcing member 15 may be bonded to the second surface 13B on the opposite side to the first surface 13A of the base film 13 .

Further, the reinforcing members 15 are bonded to the adhesive layer 14 of the adhesive sheet 10, respectively, and the second surface 13B may be used.

Further, in the third embodiment, the slits 17 are provided on the four sides of the second region 12B of the adhesive sheet 10B. However, the present invention is not limited to this. For example, the slits 17 formed on the four sides may be formed from the center of the adhesive sheet 10B toward the outer circumference, and may be formed along the radial direction.

Further, the slits 17 formed on the four sides increase the number of slits in the vicinity of the center portion of the side of the slit object, and the number of slits near the end portion of the side may be reduced.

Further, the slits 17 formed on the four sides may be in the MD direction and the CD direction of the base film constituting the adhesive sheet 10B, and the position at which the slits 17 are formed and the number of the slits 17 may be changed.

In the sixth embodiment, the adhesive sheets 10 and 10A to 10D of the embodiment are used as an example of the first dicing sheet 100. However, the adhesive sheet of the present invention is not limited to these examples. Further, in the seventh embodiment, the adhesive sheets 10 and 10A to 10D of the embodiment are used as the second transfer sheet 400. However, the adhesive sheet of the present invention is not limited to the examples. . The adhesive sheets 10 and 10A to 10D of the embodiment may be used for both the dicing sheet and the sheet for transfer. At this time, transfer The adhesive force of the adhesive layer of the sheet is preferably greater than the adhesive force of the adhesive layer of the dicing sheet.

10‧‧‧Adhesive tablets

11‧‧‧First area

12‧‧‧Second area

13‧‧‧Substrate film

13A‧‧‧ first side

13B‧‧‧ second side

14‧‧‧Adhesive layer

14A‧‧‧Adhesive layer

14B‧‧‧Adhesive layer

15‧‧‧Reinforcing components

CP‧‧‧Semiconductor wafer

Claims (12)

An adhesive sheet, comprising: a first region, a bonded adhesive; and a second region disposed on an outer circumference of the first region; wherein the tensile elastic modulus of the first region is smaller than the second region The tensile modulus of elasticity. The adhesive sheet according to claim 1, comprising: a base film; and an adhesive layer laminated on the base film; the adhesive body being a plurality of semiconductor wafers; and the first region; It is provided in the center part of a sheet in the planar view of the said adhesive sheet. The adhesive sheet according to the first aspect of the invention, wherein the first region and the second region are each formed in a substantially rectangular shape in a plan view of the adhesive sheet; incision. The adhesive sheet according to claim 3, wherein one or two or more slits are provided on four sides of the second region. The adhesive sheet according to the first aspect of the invention, wherein the first region is formed in a substantially rectangular shape in a plan view of the adhesive sheet, and the second region is formed in a substantially circular shape. For example, in the adhesive sheet described in claim 1, wherein The first region and the second region are separated by four arcs curved toward the inner side of the sheet in a plan view of the adhesive sheet. The adhesive sheet according to claim 2, further comprising: a reinforcing member bonded to a portion corresponding to the second region of the adhesive layer; wherein the tensile modulus of the reinforcing member is greater than the base The tensile modulus of the film. The adhesive sheet according to claim 2, wherein the adhesive layer in the second region contains an energy ray-curable adhesive which is cured by irradiation with an energy ray. The adhesive sheet according to any one of the first to eighth aspect, wherein the tensile modulus of the first region is 30 MPa or more and 1000 MPa or less; and the tensile modulus of the second region is 100 MPa or more and 6000 MPa or less. A method of manufacturing a semiconductor device, comprising: bonding the wafer to the first region of the adhesive sheet according to claim 1 of the patent application; and bonding the wafer to the adhesive sheet by cutting And forming a plurality of semiconductor wafers; and maintaining the second region of the adhesive sheet and stretching the adhesive sheet to expand the gap between the plurality of semiconductor wafers bonded to the first region. A method of manufacturing a semiconductor device, comprising: forming a plurality of semiconductor wafers by individualizing a wafer bonded to a first adhesive sheet by dicing; and transferring the plurality of semiconductor wafers to a patent application number 1 The work of the first region of the adhesive sheet described in the item; the process of peeling off the first adhesive sheet; and maintaining the second region of the adhesive sheet and stretching the adhesive sheet, and expanding and bonding the plurality of the first region Engineering where semiconductor wafers are spaced from one another. The method of manufacturing a semiconductor device according to claim 10, further comprising: stretching the adhesive sheet to expand a space between the plurality of semiconductor wafers, and leaving a circuit surface of the plurality of semiconductor wafers; And the work covered by the sealing member.