TW201638047A - Production method of composite metal oxide polishing material, and composite metal oxide polishing material - Google Patents

Production method of composite metal oxide polishing material, and composite metal oxide polishing material Download PDF

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TW201638047A
TW201638047A TW105101321A TW105101321A TW201638047A TW 201638047 A TW201638047 A TW 201638047A TW 105101321 A TW105101321 A TW 105101321A TW 105101321 A TW105101321 A TW 105101321A TW 201638047 A TW201638047 A TW 201638047A
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polishing
abrasive
slurry
metal oxide
zirconium
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TWI678352B (en
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Hisao Koizumi
Keiji Ono
Naoto Takahashi
Hiroki Hashimoto
Ryoichi Kato
Tsutomu Yamamoto
Masaru Mikami
Mizuho Wada
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Sakai Chemical Industry Co
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00Compounds of zirconium
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

A cerium-free polishing material is provided which has an excellent polishing speed, and which can cut production costs and has improved production efficiency; also provided is a production method for conveniently obtaining said polishing material. This production method of the composite metal oxide polishing material involves a mixing step for mixing a strontium compound and a zirconium compound and a firing step for firing the mixture obtained in the mixing step, wherein said zirconium compound contains less than or equal to 2.0 parts by weight of a sulfur compound in terms of SO3 per 100 parts by weight of said zirconium compound in terms of ZrO2.

Description

複合金屬氧化物研磨材料之製造方法及複合金屬氧化物研磨材料 Method for producing composite metal oxide abrasive material and composite metal oxide abrasive material

本發明係關於一種複合金屬氧化物研磨材料之製造方法及複合金屬氧化物研磨材料。 The present invention relates to a method of producing a composite metal oxide abrasive material and a composite metal oxide abrasive material.

針對透鏡或稜鏡等要求較高透明性與精度之精密光學玻璃製品的研磨,業界一直使用氧化鈰系研磨材。該研磨材係藉由對包含較多之所謂稀土元素(稀土類)之礦物進行煅燒、粉碎而製造。 Oxide-based abrasives have been used in the industry for the polishing of precision optical glass products requiring high transparency and precision, such as lenses or enamels. This abrasive is produced by calcining and pulverizing a mineral containing a large amount of a rare earth element (rare earth).

然而,由於稀土元素其需求增大,且供給變得不穩定,故而一直期望開發出使鈰之使用量減少之技術與代替材料。作為此種代替研磨材,於專利文獻1中,揭示出鈣鈦礦型氧化物較適宜作為研磨材之主旨,於專利文獻2中,揭示出鐵系鈣鈦礦型研磨材,於專利文獻3中,揭示出鋯系鈣鈦礦型研磨材。 However, since the demand for rare earth elements has increased and the supply has become unstable, it has been desired to develop techniques and substitute materials for reducing the amount of ruthenium used. In the case of the above-mentioned material, the perovskite type oxide is preferably used as a polishing material, and the iron-based perovskite type abrasive material is disclosed in Patent Document 2, and Patent Document 3 Among them, a zirconium perovskite type abrasive material is disclosed.

先前技術文獻 Prior technical literature

專利文獻 Patent literature

專利文獻1:日本特開2001-107028號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2001-107028

專利文獻2:日本特開2012-122042號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2012-122042

專利文獻3:日本特開2013-82050號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2013-82050

然而,於使用專利文獻1中所揭示之研磨材進行玻璃研磨之情形時,存在研磨後之玻璃雖獲得平滑之表面,但研磨速度較低之課題。 However, when glass polishing is performed using the abrasive material disclosed in Patent Document 1, there is a problem that the polished glass has a smooth surface, but the polishing rate is low.

又,專利文獻2中記載之研磨材係利用噴霧熱分解法製造,存在如下課題:因製造需要特殊之設備與大量時間而不適合大量生產,或因使用鎳或鈷等稀有金屬而擔憂與氧化鈰同樣之供給不穩定等。專利文獻3中記載之研磨材亦利用噴霧熱分解法製造,而不適合大量生產。 Further, the abrasive material described in Patent Document 2 is produced by a spray pyrolysis method, and has a problem that it is not suitable for mass production because of special equipment and a large amount of time for manufacturing, or is worried about bismuth oxide due to the use of rare metals such as nickel or cobalt. The same supply is unstable. The abrasive material described in Patent Document 3 is also produced by a spray pyrolysis method, and is not suitable for mass production.

對此,本發明者發現藉由將鍶化合物與鋯化合物進行混合、煅燒而獲得研磨材料之方法作為製造製程簡便、並且無需導入特殊設備而以低成本製造無鈰之研磨材料之方法,且亦發現利用該方法所獲得之研磨材料中,使用氧化鋯作為原料鋯化合物者其研磨速度顯著優異。然而,由於氧化鋯通常係對氫氧化鋯進行煅燒、粉碎而製造,故而有為了省略該煅燒、粉碎步驟而有更進一步實現削減製造成本及提高製造效率之鑽研之餘地。 In view of the above, the present inventors have found that a method of obtaining an abrasive material by mixing and calcining a cerium compound and a zirconium compound is a method of manufacturing a flawless abrasive material at a low cost, which is simple in manufacturing process and requires no special equipment to be introduced. Among the abrasive materials obtained by this method, zirconia was used as the raw material zirconium compound, and the polishing rate was remarkably excellent. However, since zirconium oxide is usually produced by calcining and pulverizing zirconium hydroxide, in order to omit the calcination and pulverization steps, it is possible to further reduce the manufacturing cost and improve the production efficiency.

本發明鑒於上述現狀,其目的在於提供一種研磨材料、以及用以簡便獲得該研磨材料之製造方法,該研磨材料於無鈰之研磨材料中具有良好之研磨速度,且可實現削減製造成本及提高製造效率。 The present invention has been made in view of the above circumstances, and an object thereof is to provide an abrasive material and a method for producing the same, which have a good polishing rate in a flawless abrasive material, and can reduce manufacturing cost and improve Manufacturing efficiency.

本發明者為解決上述課題而專心研究,結果著眼於在將鍶化合物與鋯化合物進行混合、煅燒而獲得之研磨材料中,將氧化鋯以外之鋯化合物作為原料之研磨材料的研磨速度不佳,首次發現其主要原因在於原料鋯化合物 中所含之硫化合物之含量。一般而言,氫氧化鋯、碳酸鋯等鋯化合物於其合成時使用硫酸、硫酸銨、硫酸鈉、硫酸鉀等含有硫酸根離子之物質之情況居多。於一般之作為鋯化合物之合成法的使用氧氯化鋯之中和沈澱法中,藉由添加含有硫酸根離子之物質,首先使鹼性硫酸鋯(Zr(OH)(4-2x)(SO4)x.nH2O(其中0<x<2))生成,繼而中和該鹼性硫酸鋯,藉此獲得氫氧化鋯或碳酸鋯等鋯化合物。其原因在於:若添加硫化合物,則所獲得之濾餅之含水量降低,處理性或過濾性變良好。於未添加硫化合物之情形時,所獲得之氫氧化鋯之過濾需要非常長之時間,生產性明顯低下,故而工業上並不適合。因此,利用通常之合成方法獲得之鋯化合物含有硫化合物,但本發明者首次發現,該硫化合物之含量對與鍶化合物之混合、煅燒後之研磨材料的研磨速度產生影響。原因雖尚未確定,但例如推測原因之一為所獲得之鋯化合物之結晶性根據製造鋯化合物時之硫化合物的添加量而不同。因此,發現若將鋯化合物中之硫化合物之含量設定為特定範圍而將其與鍶化合物進行混合、煅燒,則可容易地獲得具有高級別之研磨速度之研磨材料,思及其可徹底解決上述課題,從而完成本發明。 In order to solve the above problems, the inventors of the present invention have focused on the polishing materials obtained by mixing and calcining a cerium compound and a zirconium compound, and the polishing rate of the abrasive material using a zirconium compound other than zirconia as a raw material is not good. The main reason for the first discovery was the content of sulfur compounds contained in the raw material zirconium compound. In general, zirconium compounds such as zirconium hydroxide and zirconium carbonate are often used in the synthesis of a sulfate ion-containing substance such as sulfuric acid, ammonium sulfate, sodium sulfate or potassium sulfate. In the conventional zirconium oxychloride synthesis and precipitation method, by adding a substance containing a sulfate ion, the basic zirconium sulfate (Zr(OH) (4-2x) (SO) is firstly used. 4) x .nH 2 O (where 0 <x <2)) to generate and then neutralizing the basic zirconium sulfate, thereby obtaining zirconium hydroxide, zirconium carbonate or zirconium compounds and the like. The reason for this is that when a sulfur compound is added, the water content of the obtained filter cake is lowered, and handleability or filterability is improved. In the case where no sulfur compound is added, the obtained zirconium hydroxide is filtered for a very long period of time, and the productivity is remarkably low, so that it is not industrially suitable. Therefore, the zirconium compound obtained by the usual synthesis method contains a sulfur compound, but the inventors have found for the first time that the content of the sulfur compound affects the polishing rate of the abrasive material after mixing with the cerium compound and calcination. Although the reason has not been determined, for example, one of the reasons is presumed to be that the crystallinity of the obtained zirconium compound differs depending on the amount of the sulfur compound added in the production of the zirconium compound. Therefore, it has been found that if the content of the sulfur compound in the zirconium compound is set to a specific range and it is mixed with the cerium compound and calcined, the abrasive material having a high level of polishing speed can be easily obtained, and the above can be completely solved. The subject matter is thus completed.

即,本發明係一種複合金屬氧化物研磨材料之製造方法,其包含混合鍶化合物與鋯化合物之混合步驟、及對藉由該混合步驟所獲得之混合物進行煅燒之煅燒步驟,且該鋯化合物中所含之硫化合物之SO3換算量相對於該鋯化合物之ZrO2換算量100重量份為2.0重量份以下。 That is, the present invention is a method for producing a composite metal oxide abrasive material comprising the steps of mixing a mixed cerium compound and a zirconium compound, and a calcining step of calcining the mixture obtained by the mixing step, and the zirconium compound The amount of the SO 3 equivalent of the sulfur compound is 2.0 parts by weight or less based on 100 parts by weight of the ZrO 2 equivalent amount of the zirconium compound.

上述混合步驟中之鍶化合物較佳為選自由碳酸鍶及氫氧化鍶所組成之群中之至少1種。由於碳酸鍶及氫氧化鍶容易與鋯化合物進行反應而易於生成鋯酸鍶(SrZrO3),故而可更進一步提高生產性。 The ruthenium compound in the above mixing step is preferably at least one selected from the group consisting of cesium carbonate and cesium hydroxide. Since barium carbonate and barium hydroxide are easily reacted with the zirconium compound to easily form barium zirconate (SrZrO 3 ), productivity can be further improved.

上述混合步驟中之鋯化合物較佳為選自由碳酸鋯及氫氧化鋯所組成之群中之至少1種。由於碳酸鋯及氫氧化鋯與鍶化合物之反應性較高,故而能夠提供研磨特性更加良好之研磨材料。又,若使用該等,則可進一步實現削減製造成本及提高製造效率。 The zirconium compound in the above mixing step is preferably at least one selected from the group consisting of zirconium carbonate and zirconium hydroxide. Since zirconium carbonate and zirconium hydroxide have high reactivity with the ruthenium compound, it is possible to provide an abrasive material having more excellent polishing properties. Moreover, if these are used, it is possible to further reduce the manufacturing cost and improve the manufacturing efficiency.

上述煅燒步驟中之煅燒溫度較佳為超過800℃且為1500℃以下。若煅燒溫度為該範圍內,則可提供研磨特性更加良好之研磨材料。 The calcination temperature in the above calcination step is preferably more than 800 ° C and not more than 1500 ° C. If the calcination temperature is within this range, an abrasive material having more excellent polishing characteristics can be provided.

又,本發明亦係一種複合金屬氧化物研磨材料,該複合金屬氧化物研磨材料中所含之硫化合物之SO3換算量相對於該複合金屬氧化物研磨材料中所含之鋯化合物之ZrO2換算量100重量份為1.2重量份以下。 Further, the present invention is also a composite metal oxide abrasive material in which the SO 3 equivalent amount of the sulfur compound contained in the composite metal oxide abrasive material is relative to the ZrO 2 of the zirconium compound contained in the composite metal oxide abrasive material. The converted amount is 100 parts by weight or less and 1.2 parts by weight or less.

根據本發明之複合金屬氧化物研磨材料之製造方法,可效率良好地製造於無鈰之研磨材料中具有良好之研磨速度之研磨材料。該本發明之製造方法由於係利用固相反應法進行,故而與噴霧熱分解法相比製造製程變得簡便,無需導入特殊之設備而實現低成本之製造。又,本發明之複合金屬氧化物研磨材料可表現出良好之研磨速度,並且亦可充分應對近年來之稀土元素供給不足,因此,可認為係工業上極有利之材料。 According to the method for producing a composite metal oxide abrasive of the present invention, an abrasive material having a good polishing rate among flawless abrasive materials can be efficiently produced. Since the production method of the present invention is carried out by the solid phase reaction method, the manufacturing process is simpler than the spray pyrolysis method, and it is possible to realize low-cost production without introducing special equipment. Further, the composite metal oxide abrasive of the present invention can exhibit a good polishing rate and can sufficiently cope with the shortage of rare earth elements in recent years, and therefore can be considered as an industrially advantageous material.

圖1-1係表示對實施例1及比較例1中使用之各鋯化合物進行示差熱測定之結果之曲線圖。 Fig. 1-1 is a graph showing the results of differential thermal measurement of each of the zirconium compounds used in Example 1 and Comparative Example 1.

圖1-2係表示對實施例1及比較例1中使用之各鋯化合物進行熱重量測定 之結果之曲線圖。 Figure 1-2 shows the thermogravimetric determination of each zirconium compound used in Example 1 and Comparative Example 1. A graph of the results.

圖2-1係表示對實施例1及比較例1之各混合粉(混合物之乾燥物)進行示差熱測定之結果之曲線圖。 Fig. 2-1 is a graph showing the results of differential heat measurement of each of the mixed powders (dried products of the mixture) of Example 1 and Comparative Example 1.

圖2-2係表示對實施例1及比較例1之各混合粉(混合物之乾燥物)進行熱重量測定之結果之曲線圖。 Fig. 2-2 is a graph showing the results of thermogravimetric measurement of the mixed powders (dried products of the mixture) of Example 1 and Comparative Example 1.

圖3係表示參考例或比較參考例中使用之各研磨材漿料之ζ電位相對於pH值之關係之曲線圖。 Fig. 3 is a graph showing the relationship between the zeta potential of each of the abrasive materials used in the reference example or the comparative reference example with respect to pH.

〔複合金屬氧化物研磨材料之製造方法〕 [Method of Manufacturing Composite Metal Oxide Abrasive Material]

本發明之複合金屬氧化物研磨材料之製造方法(亦稱為「本發明之製造方法」)包含混合鍶化合物與鋯化合物之混合步驟、及對藉由該混合步驟所獲得之混合物進行煅燒之煅燒步驟。因此,可實現複合金屬氧化物研磨材料較高之研磨速度。 The method for producing a composite metal oxide abrasive according to the present invention (also referred to as "the method for producing the present invention") comprises a step of mixing a mixed cerium compound and a zirconium compound, and calcining the mixture obtained by the mixing step. step. Therefore, a higher polishing speed of the composite metal oxide abrasive material can be achieved.

再者,如根據所使用之原料亦可知,本發明之製造方法係利用固相反應法進行。因此,與噴霧熱分解法相比,製造程序變得簡便,無需導入特殊之設備而可實現低成本之製造。 Further, as can be understood from the raw materials used, the production method of the present invention is carried out by a solid phase reaction method. Therefore, the manufacturing process is simpler than the spray pyrolysis method, and it is possible to realize low-cost manufacturing without introducing special equipment.

-原料- -raw material-

首先,對本發明之製造方法中之原料之一的鍶化合物進行說明。 First, the ruthenium compound which is one of the raw materials in the production method of the present invention will be described.

鍶化合物只要為含有鍶原子之化合物則並無特別限定,其中,較佳為選自由碳酸鍶及氫氧化鍶所組成之群中之至少1種。碳酸鍶及氫氧化鍶容易與鋯化合物進行反應而易於生成鋯酸鍶(SrZrO3)。 The ruthenium compound is not particularly limited as long as it is a compound containing a ruthenium atom, and at least one selected from the group consisting of cesium carbonate and cesium hydroxide is preferable. Barium carbonate and barium hydroxide are easily reacted with a zirconium compound to easily form barium zirconate (SrZrO 3 ).

其次,對另一原料、即鋯化合物進行說明。 Next, another raw material, that is, a zirconium compound will be described.

於本發明之製造方法中,作為鋯化合物,使用其所含之硫化合物之SO3換算量相對於該鋯化合物之ZrO2換算量100重量份為2.0重量份以下之化合物。若原料鋯化合物中之硫化合物之含量於該範圍內,則可獲得研磨速度極佳之研磨材料。硫化合物之含量(SO3換算量)較佳為1.5重量份以下,更佳為1.1重量份以下,進而較佳為0.5重量份以下。 In the production method of the present invention, the amount of the SO 3 equivalent of the sulfur compound contained in the zirconium compound is 2.0 parts by weight or less based on 100 parts by weight of the ZrO 2 equivalent amount of the zirconium compound. When the content of the sulfur compound in the raw material zirconium compound is within this range, an abrasive material having an excellent polishing rate can be obtained. The content of the sulfur compound (SO 3 equivalent amount) is preferably 1.5 parts by weight or less, more preferably 1.1 parts by weight or less, still more preferably 0.5 parts by weight or less.

上述鋯化合物只要為含有鋯原子之化合物則並無特別限定,其中,較佳為氧化鋯、碳酸鋯、氫氧化鋯。該等與鍶化合物之反應性較高,而且可提供研磨特性更加良好之研磨材料。其中,較佳為使用除氧化鋯以外之鋯化合物,藉此可省略氧化鋯合成時之煅燒、粉碎步驟等,可實現削減製造成本及提高製造效率。即,較佳為選自由碳酸鋯及氫氧化鋯所組成之群中之至少1種。 The zirconium compound is not particularly limited as long as it is a compound containing a zirconium atom, and among them, zirconium oxide, zirconium carbonate, and zirconium hydroxide are preferable. These are highly reactive with ruthenium compounds and provide abrasive materials with better abrasive properties. Among them, a zirconium compound other than zirconia is preferably used, whereby the calcination and pulverization steps in the synthesis of zirconia can be omitted, and the production cost can be reduced and the production efficiency can be improved. That is, it is preferably at least one selected from the group consisting of zirconium carbonate and zirconium hydroxide.

上述鋯化合物較佳為其比表面積為0.1~250m2/g。若比表面積於該範圍內,則變得易於效率良好地生成適宜之結晶性之SrZrO3相。例如,若鋯化合物之比表面積為0.1m2/g以上,則與鍶化合物之反應性進一步提高,又,若為250m2/g以下,則與鍶化合物之反應控制變得容易,故而於任意之情形時,均易於獲得研磨速度良好之複合金屬氧化物研磨材料。更佳為0.3~240m2/g,進而較佳為0.5~230m2/g。 The above zirconium compound preferably has a specific surface area of from 0.1 to 250 m 2 /g. When the specific surface area is within this range, it becomes easy to efficiently produce a suitable crystalline SrZrO 3 phase. For example, if the specific surface area of the zirconium compound is 0.1m 2 / g or more, further enhance the reactivity of the strontium compound, and, if it is easy to 250m 2 / g or less, and the reaction control becomes the strontium compound, and therefore in any In the case of the case, it is easy to obtain a composite metal oxide abrasive material having a good polishing rate. More preferably, it is 0.3 to 240 m 2 /g, and further preferably 0.5 to 230 m 2 /g.

本說明書中,比表面積(亦稱為SSA)意指BET比表面積。 In the present specification, the specific surface area (also referred to as SSA) means a BET specific surface area.

所謂BET比表面積係指藉由作為比表面積之測定方法之一的BET法所獲得之比表面積。再者,所謂比表面積係指一物體之每單位質量之表面積。 The BET specific surface area refers to a specific surface area obtained by a BET method which is one of the methods for measuring a specific surface area. Furthermore, the specific surface area refers to the surface area per unit mass of an object.

BET法係使氮氣等氣體粒子吸附於固體粒子,並由吸附之量測定比表面積之氣體吸附法。具體而言,由壓力P與吸附量V之關係並利用BET式求出單 分子吸附量VM,藉此確定比表面積。 The BET method is a gas adsorption method in which gas particles such as nitrogen are adsorbed to solid particles and the specific surface area is measured by the amount of adsorption. Specifically, the relationship between the pressure P and the adsorption amount V is determined by the BET equation. The molecular adsorption amount VM, thereby determining the specific surface area.

-混合步驟- - mixing step -

其次,對混合步驟進行說明。 Next, the mixing step will be described.

本發明之製造方法包含混合鍶化合物與鋯化合物之混合步驟。關於混合時之原料之比例,理想為以氧化物換算之重量比計為SrO:ZrO2=10:90~43:57。混合之方法並無特別限定,可為濕式混合,亦可為乾式混合,但就混合性之觀點而言,理想為濕式混合。作為濕式混合中使用之分散介質,並無特別限定,可使用水或低級醇,就製造成本之觀點而言,較佳為水,更佳為離子交換水。於濕式混合之情形時,亦可使用球磨機或塗料調節器、砂磨機。又,較佳為繼濕式混合後進行乾燥步驟以去除分散介質。 The manufacturing method of the present invention comprises the step of mixing a mixture of a cerium compound and a zirconium compound. The ratio of the raw materials at the time of mixing is preferably SrO:ZrO 2 =10:90 to 43:57 by weight ratio in terms of oxide. The method of mixing is not particularly limited, and may be wet mixing or dry mixing, but from the viewpoint of mixing, wet mixing is preferred. The dispersion medium used in the wet mixing is not particularly limited, and water or a lower alcohol can be used. From the viewpoint of production cost, water is preferred, and ion-exchanged water is more preferred. In the case of wet mixing, a ball mill or a paint conditioner or a sand mill can also be used. Further, it is preferred to carry out a drying step after wet mixing to remove the dispersion medium.

再者,可將鋯化合物以合成中獲得之濾餅狀供給至混合步驟。 Further, the zirconium compound can be supplied to the mixing step in the form of a filter cake obtained in the synthesis.

-乾燥步驟- - drying step -

於上述混合步驟之後,亦可視需要進行乾燥步驟。 After the above mixing step, the drying step can also be carried out as needed.

於乾燥步驟中,自混合步驟中所獲得之漿料中去除分散介質並使其乾燥。使漿料乾燥之方法只要可去除混合時使用之溶劑則並無特別限定,例如可列舉減壓乾燥、加熱乾燥等。又,可直接乾燥漿料,亦可過濾後進行乾燥。 In the drying step, the dispersion medium is removed from the slurry obtained in the mixing step and allowed to dry. The method of drying the slurry is not particularly limited as long as the solvent used for the mixing can be removed, and examples thereof include drying under reduced pressure, drying by heating, and the like. Further, the slurry may be directly dried, or may be filtered and dried.

再者,亦可對混合物之乾燥物進行乾式粉碎。 Further, the dried product of the mixture may be subjected to dry pulverization.

-煅燒步驟- - calcination step -

繼而,對煅燒步驟進行說明。 Next, the calcination step will be described.

於煅燒步驟中,對藉由混合步驟所獲得之原料混合物(亦可為再經乾燥步驟所獲得之乾燥物)進行煅燒。藉此,可獲得複合金屬氧化物研磨材料。於煅燒步驟中,可直接煅燒原料混合物,亦可於成型為特定之形狀(例如顆粒狀) 後進行煅燒。煅燒環境並無特別限定。煅燒步驟可僅進行1次,亦可進行2次以上。 In the calcination step, the raw material mixture obtained by the mixing step (which may also be a dried product obtained by the drying step) is calcined. Thereby, a composite metal oxide abrasive material can be obtained. In the calcination step, the raw material mixture can be directly calcined, or can be formed into a specific shape (for example, granular) After the calcination. The calcination environment is not particularly limited. The calcination step may be carried out only once or twice or more.

上述煅燒步驟中之煅燒溫度只要為使鍶化合物與鋯化合物之反應充分進行之溫度即可,較佳為超過800℃且為1500℃以下。若煅燒溫度超過800℃,則反應更充分地進行,並且鋯化合物變得易於結晶化成為氧化鋯,若煅燒溫度為1500℃以下,則充分地抑制所生成之鋯酸鍶劇烈地燒結,故而可於任意之情形時均更進一步提高研磨速度。煅燒溫度之下限更佳為850℃以上。藉此,可更充分地發揮本發明之作用效果。進而較佳為900℃以上,尤佳為930℃以上。又,上限更佳為1300℃以下,進而較佳為1200℃以下。 The calcination temperature in the calcination step may be a temperature at which the reaction between the ruthenium compound and the zirconium compound is sufficiently carried out, and is preferably more than 800 ° C and not more than 1500 ° C. When the calcination temperature exceeds 800 ° C, the reaction proceeds more sufficiently, and the zirconium compound is easily crystallized to become zirconium oxide. When the calcination temperature is 1500 ° C or lower, the generated zirconate strontium is sufficiently suppressed from being strongly sintered. The grinding speed is further increased in any case. The lower limit of the calcination temperature is more preferably 850 ° C or higher. Thereby, the effects of the present invention can be more fully exerted. Further, it is preferably 900 ° C or higher, and particularly preferably 930 ° C or higher. Further, the upper limit is more preferably 1300 ° C or lower, further preferably 1200 ° C or lower.

本說明書中,所謂煅燒步驟中之煅燒溫度意指煅燒步驟中之最高到達溫度。 In the present specification, the calcination temperature in the calcination step means the highest reaching temperature in the calcination step.

此處,於使用硫化合物之含量超過本發明中設定之範圍之化合物作為原料之鋯化合物之情形時,即便以與使用本發明之鋯化合物之情形相同之煅燒溫度進行煅燒步驟,所獲得之研磨材料之結晶性亦不足,故而無法獲得良好之研磨速度。又,即便藉由進一步提高煅燒溫度而使研磨材料之結晶性成為相同程度,亦無法獲得足夠之研磨速度。 Here, in the case where a compound having a sulfur compound content exceeding the range set in the present invention is used as a raw material zirconium compound, the obtained grinding step is carried out even at the same calcination temperature as in the case of using the zirconium compound of the present invention. The crystallinity of the material is also insufficient, so that a good polishing speed cannot be obtained. Further, even if the crystallinity of the polishing material is made uniform by further increasing the firing temperature, a sufficient polishing rate cannot be obtained.

上述煅燒溫度下之保持時間只要為使鍶化合物與鋯化合物之反應充分進行之時間即可。例如,較佳為5分鐘~24小時。若保持時間為該範圍內,則反應更充分地進行,又,若保持時間為24小時以下,則充分地抑制所生成之煅燒物(鋯酸鍶)劇烈地燒結,故而可進一步提高研磨速度。更佳為7分鐘~22小時,進而較佳為10分鐘~20小時。 The holding time at the above calcination temperature may be a time period in which the reaction between the ruthenium compound and the zirconium compound is sufficiently carried out. For example, it is preferably from 5 minutes to 24 hours. When the holding time is within this range, the reaction proceeds more sufficiently. When the holding time is 24 hours or less, the calcined product (barium zirconate) is sufficiently suppressed from being strongly sintered, so that the polishing rate can be further increased. More preferably, it is 7 minutes to 22 hours, and further preferably 10 minutes to 20 hours.

於上述煅燒步驟中,較佳為將達到最高溫度(煅燒溫度)為止 之升溫時之升溫速度設為0.2~15℃/分鐘。若升溫速度為0.2℃/分鐘以上,則升溫所耗費之時間未成為過長之時間,故而可充分抑制能量與時間之浪費,又,若為15℃/分鐘以下,則爐內容物之溫度可充分追隨設定溫度,煅燒不均受到更充分地抑制。更佳為0.5~12℃/分鐘,進而較佳為1.0~10℃/分鐘。 In the above calcination step, it is preferred that the maximum temperature (calcination temperature) is reached. The temperature rise rate at the time of temperature rise is set to 0.2 to 15 ° C / min. When the temperature increase rate is 0.2° C./min or more, the time taken for the temperature rise is not excessively long, so that waste of energy and time can be sufficiently suppressed, and if it is 15° C./min or less, the temperature of the furnace contents can be adjusted. Fully following the set temperature, the calcination unevenness is more sufficiently suppressed. More preferably, it is 0.5 to 12 ° C / min, and further preferably 1.0 to 10 ° C / min.

-粉碎步驟- - crushing step -

於上述煅燒步驟之後,亦可視需要進行粉碎步驟。 After the calcination step described above, the pulverization step can also be carried out as needed.

於粉碎步驟中,對藉由煅燒步驟所獲得之煅燒物進行粉碎。粉碎方法及粉碎條件並無特別限定,例如亦可使用球磨機或擂潰機、錘磨機、噴射磨機等。 In the pulverization step, the calcined product obtained by the calcination step is pulverized. The pulverization method and the pulverization conditions are not particularly limited, and for example, a ball mill, a pulverizer, a hammer mill, a jet mill or the like can be used.

〔複合金屬氧化物研磨材料〕 [Composite metal oxide abrasive material]

繼而,對本發明之複合金屬氧化物研磨材料進行說明。 Next, the composite metal oxide abrasive of the present invention will be described.

本發明之複合金屬氧化物研磨材料(以下,亦簡稱為「研磨材料」)係該研磨材料中所含之硫化合物(更具體而言,進入該研磨材料之結晶中之硫化合物)之SO3換算量相對於該複合金屬氧化物研磨材料中所含之鋯化合物之ZrO2換算量100重量份成為1.2重量份以下者。若硫化合物之含量於該範圍內,則成為研磨速度極佳之研磨材料。作為該硫化合物之含量,較佳為1.0重量份以下,更佳為0.8重量份以下,進而較佳為0.6重量份以下。 The composite metal oxide abrasive of the present invention (hereinafter, also simply referred to as "abrasive material") is SO 3 of a sulfur compound contained in the abrasive material (more specifically, a sulfur compound which enters the crystal of the abrasive material). The amount of the converted amount is 1.2 parts by weight or less based on 100 parts by weight of the ZrO 2 equivalent amount of the zirconium compound contained in the composite metal oxide abrasive. When the content of the sulfur compound is within this range, it becomes an abrasive material having an excellent polishing rate. The content of the sulfur compound is preferably 1.0 part by weight or less, more preferably 0.8 part by weight or less, still more preferably 0.6 part by weight or less.

上述研磨材料較佳為藉由上述發明之製造方法而獲得。 The above abrasive material is preferably obtained by the production method of the above invention.

上述研磨材料較佳為含有ZrO2之結晶相、及SrZrO3之結晶相。研磨材料中所含之ZrO2之結晶相負責機械研磨作用,SrZrO3之結晶相負責化學研磨作用,藉此能夠表現出更加良好之研磨速度。又,本發明之研磨材料較佳為ZrO2與SrZrO3之複合體,藉此,可進一步提高研磨速度。再者,所謂SrZrO3與ZrO2之複合體係指SrZrO3與氧化鋯之各者之一次粒子進行部分燒結而形成之 二次粒子。例如,若對複合體進行利用能量分散型X射線分析法(EDS)之元素製圖,則觀察到檢測出Sr與Zr之一次粒子及僅檢測出Zr之一次粒子形成二次粒子之情況。 The polishing material is preferably a crystal phase containing ZrO 2 and a crystal phase of SrZrO 3 . The crystal phase of ZrO 2 contained in the abrasive material is responsible for mechanical grinding, and the crystal phase of SrZrO 3 is responsible for chemical polishing, whereby a more excellent polishing speed can be exhibited. Further, the abrasive of the present invention is preferably a composite of ZrO 2 and SrZrO 3 , whereby the polishing rate can be further increased. Further, the composite system of SrZrO 3 and ZrO 2 refers to a secondary particle formed by partial sintering of primary particles of each of SrZrO 3 and zirconia. For example, when the composite is subjected to elemental mapping by energy dispersive X-ray analysis (EDS), it is observed that primary particles of Sr and Zr and primary particles of only Zr are detected to form secondary particles.

上述研磨材料較佳為使用CuK α射線作為放射源之X射線繞射中之斜方晶SrZrO3之來自(040)面之波峰的半高寬為0.1~3.0°。若半高寬於該範圍內,則有效發揮化學研磨作用之SrZrO3之結晶性變得適宜,故而可充分發揮化學研磨作用。再者,若半高寬超過3.0°,則存在SrZrO3之結晶性變得不充分之情況,若半高寬未達0.1°,則存在因SrZrO3之結晶性變得過高,而於任意之情形時均無法充分獲得由SrZrO3發揮之化學研磨作用之情況。更佳為0.1~1.0°,進而較佳為0.1~0.7°,尤佳為0.1~0.4°。 Preferably, the abrasive material has a full width at half maximum of a peak from the (040) plane of the orthorhombic SrZrO 3 in the X-ray diffraction using CuK α ray as a radiation source of 0.1 to 3.0°. When the full width at half maximum is within this range, the crystallinity of SrZrO 3 which effectively exhibits a chemical polishing action is suitable, so that the chemical polishing action can be sufficiently exhibited. In addition, when the full width at half maximum exceeds 3.0°, the crystallinity of SrZrO 3 may be insufficient. When the full width at half maximum is less than 0.1°, the crystallinity of SrZrO 3 may be excessively high. In the case of the case, the chemical polishing action by SrZrO 3 cannot be sufficiently obtained. More preferably, it is 0.1 to 1.0 °, further preferably 0.1 to 0.7 °, and particularly preferably 0.1 to 0.4 °.

上述研磨材料較佳為成為體積基準粒度分佈之銳度指標的D90相對於D10之比(D90/D10)為1.5~50。於D90/D10超過50之情形時,存在因粒徑之差異過大,而無法充分獲得研磨材料與成為研磨對象之物體之接觸,導致研磨速度不充分之情況。於D90/D10未達1.5之情形時,則存在因粒徑之差異過小,而無法充分獲得研磨材料與成為研磨對象之物體之接觸,導致研磨速度不充分之情況。 Preferably, the abrasive material has a ratio of D 90 to D 10 (D 90 /D 10 ) which is an index of sharpness of the volume-based particle size distribution of 1.5 to 50. To D 90 / D 10 of more than 50 case, due to the presence of differences in particle diameter is too large, it can not be sufficiently obtained abrasive material contacting the polished of the object, resulting in the case of insufficient polishing rate. When the D 90 /D 10 is less than 1.5, the difference in particle diameter is too small, and the contact between the abrasive material and the object to be polished may not be sufficiently obtained, resulting in insufficient polishing rate.

再者,D90/D10越大,意指粒度分佈越寬,該值越小,意指粒度分佈越陡峭。 Further, the larger D 90 /D 10 means that the wider the particle size distribution, the smaller the value means the steeper the particle size distribution.

D10、D90係分別藉由測定粒度分佈而獲得之值。D10意指體積基準下之10%累計粒徑,D90意指體積基準下之90%累計粒徑。 D 10 and D 90 are values obtained by measuring the particle size distribution, respectively. D 10 means 10% cumulative particle size on a volume basis, and D 90 means 90% cumulative particle size on a volume basis.

上述研磨材料較佳為Sr以SrO換算計含有10~43重量%。於Sr含量以SrO換算計未達10重量%之情形時,存在SrZrO3之含量降低,而無法充分獲得化學研磨作用之情況。又,於Sr含量以SrO換算計超過43重量%之 情形時,存在ZrO2之含量相對降低,而無法充分獲得機械研磨作用之情況。更佳為11~43重量%,進而較佳為12~43重量%。 The above-mentioned polishing material preferably contains Sr in an amount of 10 to 43% by weight in terms of SrO. When the Sr content is less than 10% by weight in terms of SrO, the content of SrZrO 3 is lowered, and the chemical polishing effect cannot be sufficiently obtained. In addition, when the Sr content is more than 43% by weight in terms of SrO, the content of ZrO 2 is relatively lowered, and the mechanical polishing action cannot be sufficiently obtained. More preferably, it is 11 to 43% by weight, and further preferably 12 to 43% by weight.

上述研磨材料較佳為比表面積為1.0~50m2/g。於比表面積未達1.0m2/g之情形時,存在研磨材料之比表面積過小,而無法與成為研磨對象之物體充分接觸,導致無法充分研磨之情況。又,於比表面積超過50m2/g之情形時,存在構成研磨材料之研磨粒過小,而無法充分獲得機械研磨作用之情況。更佳為1.0~45m2/g,進而較佳為1.0~40m2/g。 The above abrasive material preferably has a specific surface area of 1.0 to 50 m 2 /g. When the specific surface area is less than 1.0 m 2 /g, the specific surface area of the abrasive material is too small to be sufficiently in contact with the object to be polished, resulting in insufficient polishing. Further, when the specific surface area exceeds 50 m 2 /g, the abrasive grains constituting the abrasive material are too small to sufficiently obtain the mechanical polishing action. More preferably 1.0 ~ 45m 2 / g, and further preferably 1.0 ~ 40m 2 / g.

本發明之研磨材料可應用於各種研磨對象。例如,可應用於以往使用氧化鈰、氧化鉻及鐵丹(Fe2O3)等作為研磨材料之研磨對象。研磨對象並無特別限定,例如可列舉玻璃基板、金屬板、石材、藍寶石、氮化矽、碳化矽、氧化矽、氮化鎵、砷化鎵、砷化銦、及磷化銦等。 The abrasive material of the present invention can be applied to various abrasive objects. For example, it can be applied to conventional polishing using cerium oxide, chromium oxide, and iron oxide (Fe 2 O 3 ) as an abrasive. The object to be polished is not particularly limited, and examples thereof include a glass substrate, a metal plate, stone, sapphire, tantalum nitride, tantalum carbide, niobium oxide, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

上述研磨材料亦可根據用途,適當地與其他成分混合而使用。例如,本發明之研磨材料可與分散介質混合,可與添加劑混合,亦可同時混合分散介質及添加劑。與分散介質及/或添加劑混合時之形態並無特別限定,例如,可以粉末狀、糊狀、漿料狀等形態使用。 The above-mentioned polishing material may be suitably used in combination with other components depending on the application. For example, the abrasive material of the present invention may be mixed with a dispersion medium, may be mixed with an additive, or may be mixed with a dispersion medium and an additive at the same time. The form when it is mixed with the dispersion medium and/or the additive is not particularly limited, and for example, it can be used in the form of a powder, a paste, or a slurry.

作為分散介質並無特別限定,例如可列舉水、有機溶劑及該等之混合物等,可使用1種或2種以上。作為有機溶劑,可列舉醇、丙酮、二甲基亞碸、二甲基甲醯胺、四氫呋喃、二烷等,作為醇,可列舉甲醇、乙醇、丙醇等一元水溶性醇;乙二醇、甘油等二元以上之水溶性醇等。作為分散介質較佳為水,更佳為離子交換水。 The dispersion medium is not particularly limited, and examples thereof include water, an organic solvent, and a mixture thereof. These may be used alone or in combination of two or more. Examples of the organic solvent include alcohol, acetone, dimethyl hydrazine, dimethylformamide, tetrahydrofuran, and Examples of the alcohol include a monohydric water-soluble alcohol such as methanol, ethanol or propanol; a water-soluble alcohol of two or more types such as ethylene glycol or glycerin. As the dispersion medium, water is preferred, and ion exchange water is more preferred.

作為添加劑並無特別限定,例如可列舉酸、鹼、pH值調整劑、螯合化劑、消泡劑、分散劑、黏度調整劑、防凝聚劑、潤滑劑、還原劑、防銹 劑、公知之研磨材料等。於不妨礙本發明之效果之範圍內亦可將該等添加劑併用1種或2種以上。 The additive is not particularly limited, and examples thereof include an acid, a base, a pH adjuster, a chelating agent, an antifoaming agent, a dispersing agent, a viscosity adjusting agent, an anti-agglomerating agent, a lubricant, a reducing agent, and a rust preventive agent. Agent, known abrasive materials, and the like. One or two or more kinds of these additives may be used in combination in the range which does not impair the effects of the present invention.

〔研磨方法〕 [grinding method]

其次,對使用本發明之複合金屬氧化物研磨材料之研磨方法之一例進行敘述。 Next, an example of a polishing method using the composite metal oxide abrasive of the present invention will be described.

本發明之複合金屬氧化物研磨材料如上所述可應用於各種研磨對象,其中,於將負帶電性基板作為研磨對象之情形時,應用於以下之研磨方法較適宜。再者,使用本發明之複合金屬氧化物研磨材料之研磨方法並非僅限定於以下之研磨方法。 The composite metal oxide abrasive of the present invention can be applied to various polishing targets as described above, and in the case where a negatively chargeable substrate is used as a polishing target, it is preferably applied to the following polishing method. Further, the polishing method using the composite metal oxide abrasive of the present invention is not limited to the following polishing methods.

即,為分別實施至少1次如下步驟之研磨方法:於含有本發明之複合金屬氧化物研磨材料之漿料(以下,亦稱為研磨材漿料)之ζ電位變為正之條件下研磨負帶電性基板之研磨步驟a、及於該研磨材漿料之ζ電位變為負之條件下研磨負帶電性基板之研磨步驟b。 In other words, the polishing method is performed at least once, and the negative charging is performed under the condition that the zeta potential of the slurry containing the composite metal oxide abrasive of the present invention (hereinafter also referred to as the polishing slurry) becomes positive. The polishing step a of the substrate and the polishing step b of polishing the negatively charged substrate under the condition that the zeta potential of the slurry is negative.

本說明書中,負帶電性基板較佳為於pH值大於4之水溶液中總帶負電之基板,例如可列舉玻璃基板(玻璃之等電點約為2.0)。此外,亦可列舉碳化矽基板(碳化矽之等電點約為4.0)等。 In the present specification, the negatively-chargeable substrate is preferably a substrate which is negatively charged in an aqueous solution having a pH of more than 4, and examples thereof include a glass substrate (the isoelectric point of the glass is about 2.0). Further, a tantalum carbide substrate (the isoelectric point of tantalum carbide is about 4.0) or the like may be mentioned.

再者,作為玻璃基板,例如可列舉鈉鈣玻璃、無鹼玻璃、硼矽酸玻璃、石英玻璃等透明或半透明者。 In addition, examples of the glass substrate include transparent or translucent crystals such as soda lime glass, alkali-free glass, borosilicate glass, and quartz glass.

於上述研磨方法中,分別實施至少1次如下步驟:於研磨材漿料之ζ電位變為正之條件下研磨負帶電性基板之研磨步驟a、及於研磨材漿料之ζ電位變為負之條件下研磨負帶電性基板之研磨步驟b。該等研磨步驟之順序並無特別限定,可於研磨步驟a之後進行研磨步驟b,亦可於研磨步驟b之 後進行研磨步驟a。其中,為了獲得表面平滑性優異之負帶電性基板,尤佳為於進行至少1次研磨步驟a之後,進行至少1次研磨步驟b。又,可多次進行各研磨步驟,亦可交替地實施研磨步驟a與研磨步驟b。於多次進行研磨步驟a之情形時,只要研磨材漿料之ζ電位為正,則可變更ζ電位而實施,亦可不變更而實施。於多次進行研磨步驟b之情形時亦相同,只要研磨材漿料之ζ電位為負,則可變更ζ電位而實施,亦可不變更而實施。 In the above polishing method, the polishing step a of polishing the negatively-charged substrate is performed under the condition that the zeta potential of the polishing slurry is positive, and the zeta potential of the slurry is negative in at least one step. The grinding step b of grinding the negatively charged substrate under conditions. The order of the polishing steps is not particularly limited, and the polishing step b may be performed after the polishing step a, or may be performed in the polishing step b. Thereafter, the grinding step a is performed. Among them, in order to obtain a negatively-chargeable substrate excellent in surface smoothness, it is particularly preferable to perform at least one polishing step b after performing at least one polishing step a. Further, each polishing step may be performed a plurality of times, and the polishing step a and the polishing step b may be alternately performed. When the polishing step a is performed a plurality of times, as long as the zeta potential of the polishing slurry is positive, the zeta potential may be changed or may be carried out without change. The same applies to the case where the polishing step b is performed a plurality of times. As long as the zeta potential of the polishing slurry is negative, the zeta potential can be changed or carried out without change.

本說明書中,所謂「研磨材漿料之ζ電位」係於後述之實施例中記載之測定條件下所求出之值。 In the present specification, the "ζ potential of the polishing slurry" is a value obtained under the measurement conditions described in Examples to be described later.

於上述研磨方法中,研磨材料在研磨步驟a中發揮靜電引力之作用,在研磨步驟b中發揮靜電斥力之作用,因此推測出利用該等之協同效應,可實現較高之研磨速度、及研磨後之負帶電性基板之優異之表面平滑性。通常,於研磨前之負帶電性基板之表面存在由微細之損傷或孔等構成之凹部。於研磨步驟a中,認為由於作為研磨對象之基板帶負電,相對於此,研磨材漿料帶正電,故而研磨材藉由靜電引力而滲透至凹部之深處,促進研磨,因此研磨速度得到提高。另一方面,於研磨步驟b中,認為雖然由於作為研磨對象之基板與研磨材漿料均帶負電,故而因靜電斥力而研磨材未滲透至凹部之深處,但藉由對研磨墊與基板之間施加壓力,研磨材較多地存在於基板表面之凸部,藉此使基板表面平滑化。因此,只要研磨對象為負帶電性基板則成為相同之作用機制,故而上述研磨方法不僅可應用於玻璃基板,亦可應用於各種負帶電性基板。 In the above polishing method, the polishing material acts as an electrostatic attraction force in the polishing step a, and functions as an electrostatic repulsion in the polishing step b. Therefore, it is presumed that a high polishing rate and polishing can be achieved by utilizing the synergistic effects. Excellent surface smoothness of the latter negatively charged substrate. Usually, a concave portion composed of fine damage or a hole or the like is present on the surface of the negatively-charged substrate before polishing. In the polishing step a, it is considered that since the substrate to be polished is negatively charged, the polishing slurry is positively charged. Therefore, the polishing material penetrates into the depth of the concave portion by electrostatic attraction to promote polishing, so that the polishing speed is obtained. improve. On the other hand, in the polishing step b, it is considered that the substrate to be polished and the polishing slurry are negatively charged, so that the abrasive does not penetrate deep into the concave portion due to the electrostatic repulsion, but by the polishing pad and the substrate Pressure is applied therebetween, and the abrasive material is present in a large number of convex portions on the surface of the substrate, thereby smoothing the surface of the substrate. Therefore, as long as the object to be polished is a negatively charged substrate, the same mechanism of action is obtained. Therefore, the above polishing method can be applied not only to a glass substrate but also to various negatively charged substrates.

上述研磨步驟a及研磨步驟b之任一步驟均於研磨材漿料之存在下進行研磨。於研磨步驟a與研磨步驟b中,可使用相同之研磨材漿料,即 連續使用(再利用),僅控制該漿料之ζ電位,亦可分別不同地準備ζ電位變為正或負之研磨材漿料,於各研磨步驟中切換研磨材漿料。於任意之情形時,只要作為研磨材漿料使用含有本發明之複合金屬氧化物研磨材料者即可。如此般於上述研磨方法中,可連續使用(再利用)研磨材漿料,即便於切換之情形時亦無需準備種類差異較大之研磨材漿料,故而無需如習知之方法般於研磨材切換時所必需之洗淨作業或專用裝置等。又,即便不須使用氧化鈰亦可實現較高之研磨速度與優異之表面平滑性,故而上述研磨方法與習知之研磨方法相比可認為係非常有利之方法。 Any of the above-described polishing step a and polishing step b is performed in the presence of a polishing slurry. In the grinding step a and the grinding step b, the same abrasive slurry can be used, that is, Continuous use (reuse), only the zeta potential of the slurry is controlled, and the slurry slurry having a positive or negative zeta potential may be prepared differently, and the polishing slurry may be switched in each polishing step. In any case, the composite metal oxide abrasive material of the present invention may be used as the polishing material slurry. In the polishing method as described above, the polishing slurry can be continuously used (recycled), and it is not necessary to prepare a polishing slurry having a large difference in type even in the case of switching, so that it is not necessary to switch the polishing material as in the conventional method. Washing operations or special equipment necessary for the time. Further, even if it is not necessary to use cerium oxide, a high polishing rate and excellent surface smoothness can be achieved, and thus the above polishing method is considered to be a very advantageous method as compared with the conventional polishing method.

上述研磨步驟a係於研磨材漿料之ζ電位變為正之條件下使用該研磨材漿料研磨負帶電性基板之步驟。於該研磨步驟中,可實現與習知之使用氧化鈰系研磨材的情況大致同等之較高研磨速度,並且與使用氧化鈰系研磨材之情況相比,亦可提高負帶電性基板之表面平滑性。 The polishing step a is a step of polishing the negatively-charged substrate using the abrasive slurry under the condition that the zeta potential of the polishing slurry is positive. In the polishing step, it is possible to achieve a higher polishing rate substantially the same as that of the conventional use of the cerium oxide-based abrasive, and it is also possible to improve the surface smoothness of the negatively-charged substrate as compared with the case of using the yttrium-based abrasive. Sex.

上述研磨步驟b係於研磨材漿料之ζ電位變為負之條件下使用該研磨材漿料研磨負帶電性基板之步驟。於該研磨步驟中,可實現明顯高於習知之使用膠體二氧化矽(colloidal silica)之精密研磨步驟的研磨速度,同時可實施與使用膠體二氧化矽之精密研磨步驟大致同等之精密之研磨,而於研磨後之負帶電性基板中實現較高表面平滑性。 The polishing step b is a step of polishing the negatively-charged substrate using the abrasive slurry under the condition that the zeta potential of the polishing slurry is negative. In the grinding step, a polishing speed which is significantly higher than the conventional precision grinding step using colloidal silica can be achieved, and at the same time, a precision grinding which is substantially equivalent to the precision grinding step using colloidal cerium oxide can be carried out. Higher surface smoothness is achieved in the negatively charged substrate after grinding.

如上所述,於研磨步驟a中在研磨材漿料之ζ電位變為正之條件下研磨負帶電性基板,於研磨步驟b中在研磨材漿料之ζ電位變為負之條件下研磨負帶電性基板,但較佳為於研磨材漿料之ζ電位之絕對值分別成為5mV以上之條件下進行各研磨步驟。分別更佳為10mV以上,進而較佳為15mV以上,尤佳為20mV以上。各步驟中之該絕對值之上限並無特別限定,例如就 易控制性(例如,若於研磨步驟a中ζ電位過大,則有於玻璃基板表面殘留附著研磨材之可能性,故而防止該情況等,又,例如,若於研磨步驟b中ζ電位過小,則有負帶電性基板與研磨材漿料之靜電斥力過強地作用而無法充分提高研磨速度之可能性,故而防止該情況等)之觀點而言,分別較佳為100mV以下。 As described above, the negatively charged substrate is ground in the polishing step a under the condition that the zeta potential of the abrasive slurry becomes positive, and the negatively charged substrate is ground in the polishing step b under the condition that the zeta potential of the abrasive slurry becomes negative. The substrate is preferably subjected to each polishing step under the condition that the absolute value of the zeta potential of the polishing slurry is 5 mV or more. More preferably, it is 10 mV or more, further preferably 15 mV or more, and particularly preferably 20 mV or more. The upper limit of the absolute value in each step is not particularly limited, for example, It is easy to control (for example, if the zeta potential is too large in the polishing step a, there is a possibility that the polishing material remains on the surface of the glass substrate, and this is prevented. For example, if the zeta potential is too small in the polishing step b, In the case where the electrostatic repulsion of the negatively-charged substrate and the polishing slurry is too strong to sufficiently increase the polishing rate, it is preferably 100 mV or less from the viewpoint of preventing this.

研磨材漿料之ζ電位可藉由調整該研磨材漿料之pH值而進行控制。若研磨材漿料含有本發明之複合金屬氧化物研磨材料,則當將研磨材漿料之pH值調整為未達該研磨材漿料之等電點時,其ζ電位變為正,另一方面,當將研磨材漿料之pH值調整為超過該研磨材漿料之等電點之範圍時,其ζ電位變為負。再者,以往之研磨材雖重視提高研磨速度、或提高表面平滑性等,但本發明之複合金屬氧化物研磨材料僅藉由pH值即可簡單地控制研磨性,就該方面而言,可發揮由習知技術所無法構想之特異之效果。 The zeta potential of the abrasive slurry can be controlled by adjusting the pH of the abrasive slurry. When the abrasive slurry contains the composite metal oxide abrasive of the present invention, when the pH of the slurry slurry is adjusted to be below the isoelectric point of the slurry slurry, the zeta potential becomes positive, and the other On the other hand, when the pH of the abrasive slurry is adjusted to exceed the range of the isoelectric point of the abrasive slurry, the zeta potential becomes negative. Further, in the conventional polishing material, the polishing rate is increased, or the surface smoothness is improved. However, the composite metal oxide polishing material of the present invention can easily control the polishing property only by the pH value, and in this respect, Exercising the specific effects that cannot be conceived by conventional techniques.

pH值之調整可藉由向研磨材漿料中添加pH值調整劑而進行,亦可使用pH值緩衝液調整研磨材漿料之pH值。 The adjustment of the pH value can be carried out by adding a pH adjuster to the polishing slurry, and the pH of the polishing slurry can also be adjusted using a pH buffer.

再者,於研磨材漿料之pH值已處於對研磨較佳之範圍內之情形時,亦可不進行pH值調整。 Further, when the pH of the abrasive slurry is already in the range of preferably the polishing, the pH adjustment may not be performed.

作為上述pH值調整劑,可使用酸或鹼。若使用酸,則可將研磨材漿料之pH值調整為酸性側,若使用鹼,則可將研磨材漿料之pH值調整為鹼性側。作為酸,例如較佳為硝酸、硫酸、鹽酸、過氯酸、磷酸等無機酸;草酸、檸檬酸等有機酸;作為鹼,例如較佳為氫氧化鈉水溶液、氫氧化鉀水溶液、氫氧化鈣水溶液、碳酸鈉水溶液、氨水、碳酸氫鈉水溶液等鹼性水溶液。 As the pH adjuster, an acid or a base can be used. When an acid is used, the pH of the polishing slurry can be adjusted to the acidic side, and if a base is used, the pH of the polishing slurry can be adjusted to the alkaline side. The acid is, for example, preferably an inorganic acid such as nitric acid, sulfuric acid, hydrochloric acid, perchloric acid or phosphoric acid; an organic acid such as oxalic acid or citric acid; and as the base, for example, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution or a calcium hydroxide is preferred. An alkaline aqueous solution such as an aqueous solution, an aqueous solution of sodium carbonate, an aqueous solution of ammonia or an aqueous solution of sodium hydrogencarbonate.

於上述研磨方法中,較佳為在研磨材漿料之pH值大於上述負 帶電性基板之等電點且未達該研磨材漿料之等電點之條件下實施研磨步驟a。藉此,充分地抑制本發明之複合金屬氧化物研磨材料因強酸而發生溶解,該研磨材料之研磨作用得到進一步發揮,除此以外,亦可減輕對研磨機、裝置之負擔。作為研磨步驟a中之研磨材漿料之pH值的下限值,具體而言,較佳為2以上。更佳為3以上,進而較佳為4以上。 In the above grinding method, preferably, the pH of the abrasive slurry is greater than the above negative The polishing step a is carried out under the condition that the isoelectric point of the charged substrate does not reach the isoelectric point of the abrasive slurry. Thereby, the composite metal oxide abrasive of the present invention is sufficiently inhibited from being dissolved by a strong acid, and the polishing action of the abrasive is further exerted, and the burden on the polishing machine and the apparatus can be reduced. The lower limit of the pH of the polishing slurry in the polishing step a is specifically preferably 2 or more. More preferably, it is 3 or more, More preferably, it is 4 or more.

又,較佳為於研磨材漿料之pH值大於該研磨材漿料之等電點、且成為13以下之條件下實施研磨步驟b。藉此,充分地抑制本發明之複合金屬氧化物研磨材料因強鹼而發生溶解,該研磨材料之研磨作用得到進一步發揮,除此以外,亦可減輕對研磨機、裝置之負擔。研磨步驟b中之研磨材漿料之pH值之上限值較佳為12以下。更佳為11以下。 Moreover, it is preferable to perform the polishing step b under the condition that the pH of the polishing slurry is larger than the isoelectric point of the polishing slurry and is 13 or less. Thereby, the composite metal oxide polishing material of the present invention is sufficiently inhibited from being dissolved by a strong alkali, and the polishing action of the polishing material is further exerted, and the burden on the polishing machine and the apparatus can be reduced. The upper limit of the pH of the polishing slurry in the polishing step b is preferably 12 or less. More preferably, it is 11 or less.

所謂研磨材漿料(及本發明之複合金屬氧化物研磨材料)之等電點係指研磨材漿料中之研磨粒(本發明之複合金屬氧化物研磨材料)所帶之電荷之代數和為零之點,即研磨粒所帶之正電荷與負電荷變為相等之點,能以該點下之研磨材漿料之pH值來表示。 The isoelectric point of the abrasive slurry (and the composite metal oxide abrasive of the present invention) means that the algebraic charge of the abrasive particles (the composite metal oxide abrasive of the present invention) in the abrasive slurry is The point zero, that is, the point at which the positive and negative charges of the abrasive particles become equal, can be expressed by the pH of the slurry slurry at that point.

於上述研磨材漿料中,本發明之複合金屬氧化物研磨材料之含量例如在100重量%研磨材漿料中,較佳為0.001~90重量%。更佳為0.01~30重量%。又,上述研磨材漿料較佳為進而含有分散介質。關於分散介質如上所述。 In the above-mentioned abrasive slurry, the content of the composite metal oxide abrasive of the present invention is preferably 0.001 to 90% by weight, for example, in 100% by weight of the abrasive slurry. More preferably, it is 0.01 to 30% by weight. Moreover, it is preferable that the said abrasive slurry further contains a dispersion medium. The dispersion medium is as described above.

[實施例] [Examples]

為詳細說明本發明,於以下列舉出實施例,但本發明並非僅限定於該等實施例。 In order to explain the present invention in detail, the examples are exemplified below, but the invention is not limited to the embodiments.

實施例1 Example 1

(1)Zr原料準備步驟 (1) Zr raw material preparation steps

一面攪拌一面使3.0kg氧氯化鋯八水合物(昭和化學股份有限公司製造)溶解於6.7L離子交換水中。一面攪拌該溶液一面調整為25℃,維持該溫度,並歷時1小時一面攪拌一面添加180g/L之氫氧化鈉水溶液直至pH值變為9.5,進一步攪拌1小時。對該漿料進行過濾水洗,水洗直至洗液之導電率成為100μS/cm以下,藉此獲得氫氧化鋯濾餅。 3.0 kg of zirconium oxychloride octahydrate (manufactured by Showa Chemical Co., Ltd.) was dissolved in 6.7 L of ion-exchanged water while stirring. While stirring the solution, the solution was adjusted to 25 ° C, and the temperature was maintained. After stirring for 1 hour, a 180 g/L sodium hydroxide aqueous solution was added until the pH became 9.5, and the mixture was further stirred for 1 hour. The slurry was filtered and washed with water, and washed with water until the conductivity of the washing liquid became 100 μS/cm or less, whereby a zirconium hydroxide filter cake was obtained.

(2)混合步驟 (2) mixing step

秤取作為Sr原料之26.1g碳酸鍶(堺化學工業股份有限公司製造:SW-P-N)、及作為Zr原料之以ZrO2換算計為31.3g之藉由(1)Zr原料準備步驟所獲得之氫氧化鋯濾餅並放入300mL美乃滋瓶中,添加172mL離子交換水與415g之1mm 氧化鋯珠並使用塗料調節器(Red Devil公司製造:5110型)混合30分鐘。 26.1 g of cesium carbonate (manufactured by Suga Chemical Industry Co., Ltd.: SW-PN) as a raw material of Sr, and 31.3 g of ZrO 2 as a Zr raw material were obtained by the (1) Zr raw material preparation step. Zirconium hydroxide filter cake and placed in 300mL cannabis bottle, add 172mL ion exchange water and 415g of 1mm The zirconia beads were mixed for 30 minutes using a paint conditioner (manufactured by Red Devil Co., Ltd.: Model 5110).

(3)乾燥步驟 (3) Drying step

將藉由上述(2)混合步驟所獲得之漿料置於400目(網眼38μm)之篩網上,而去除氧化鋯珠,繼而於120℃之溫度下將過濾獲得之混合物之濾餅充分乾燥,藉此獲得混合物之乾燥物。 The slurry obtained by the above (2) mixing step is placed on a sieve of 400 mesh (mesh 38 μm) to remove the zirconia beads, and then the filter cake of the mixture obtained by filtration is fully formed at a temperature of 120 ° C. Drying, thereby obtaining a dried product of the mixture.

(4)煅燒步驟 (4) Calcination step

將藉由上述(3)乾燥步驟所獲得之混合物之乾燥物中30g放入至外徑55mm、容量60mL之氧化鋁製坩鍋中,使用電灼爐(ADVANTEC公司製造,KM-420)進行煅燒,獲得煅燒物。煅燒條件為歷時285分鐘自室溫升溫至950℃,於950℃保持180分鐘,此後中止向加熱器通電而冷卻至室溫。再者,煅燒係於大氣中進行。 30 g of the dried product of the mixture obtained by the above (3) drying step was placed in an alumina crucible having an outer diameter of 55 mm and a capacity of 60 mL, and calcined using an electric burning furnace (manufactured by ADVANTEC, KM-420). , a calcined product is obtained. The calcination conditions were raised from room temperature to 950 ° C over 285 minutes and held at 950 ° C for 180 minutes, after which the heater was energized and cooled to room temperature. Further, calcination is carried out in the atmosphere.

(5)粉碎步驟 (5) pulverization step

將10g藉由上述(4)煅燒步驟所獲得之煅燒物放入至自動乳缽(擂潰機)(日陶科學股份有限公司製造:ANM-150)中,粉碎10分鐘,藉此獲得複合金屬氧化物研磨材料。 10 g of the calcined product obtained by the above (4) calcination step was placed in an automatic mortar (manufactured by Nitto Scientific Co., Ltd.: ANM-150), and pulverized for 10 minutes, thereby obtaining a composite metal. Oxide abrasive material.

實施例2、3 Example 2, 3

將(4)煅燒步驟中之煅燒溫度變更為表1中記載之溫度,除此以外,與實施例1相同地進行,而獲得複合金屬氧化物研磨材料。 The composite metal oxide abrasive was obtained in the same manner as in Example 1 except that the calcination temperature in the (4) calcination step was changed to the temperature shown in Table 1.

實施例4 Example 4

(1)Zr原料準備步驟 (1) Zr raw material preparation steps

一面攪拌一面使3.0kg氧氯化鋯八水合物(昭和化學股份有限公司製造)與0.35kg硫酸銨(東亞合成股份有限公司製造)溶解於6.7L離子交換水中。一面攪拌該溶液一面調整為25℃,維持該溫度,並歷時1小時一面攪拌一面添加180g/L之氫氧化鈉水溶液直至pH值變為9.5,進一步攪拌1小時。對該漿料進行過濾水洗,水洗直至洗液之導電率成為100μS/cm以下,藉此獲得氫氧化鋯濾餅。 3.0 kg of zirconium oxychloride octahydrate (manufactured by Showa Chemical Co., Ltd.) and 0.35 kg of ammonium sulfate (manufactured by Toagosei Co., Ltd.) were dissolved in 6.7 L of ion-exchanged water while stirring. While stirring the solution, the solution was adjusted to 25 ° C, and the temperature was maintained. After stirring for 1 hour, a 180 g/L sodium hydroxide aqueous solution was added until the pH became 9.5, and the mixture was further stirred for 1 hour. The slurry was filtered and washed with water, and washed with water until the conductivity of the washing liquid became 100 μS/cm or less, whereby a zirconium hydroxide filter cake was obtained.

(2)乾燥步驟~(5)粉碎步驟與實施例1相同地進行,而獲得複合金屬氧化物研磨材料。 (2) Drying Step - (5) The pulverizing step was carried out in the same manner as in Example 1 to obtain a composite metal oxide abrasive.

實施例5 Example 5

使用109g碳酸鋯(巴工業股份有限公司製造)作為(2)混合步驟中之Zr原料,除此以外,與實施例1相同地進行,而獲得複合金屬氧化物研磨材料。 A composite metal oxide abrasive was obtained in the same manner as in Example 1 except that 109 g of zirconium carbonate (manufactured by Ba Industrial Co., Ltd.) was used as the Zr raw material in the (2) mixing step.

實施例6 Example 6

使用69g碳酸鋯(巴工業股份有限公司製造)作為(2)混合步驟中之Zr 原料,除此以外,與實施例1相同地進行,而獲得複合金屬氧化物研磨材料。 Using 69 g of zirconium carbonate (manufactured by Ba Industrial Co., Ltd.) as (2) Zr in the mixing step A composite metal oxide abrasive was obtained in the same manner as in Example 1 except for the above.

比較例1 Comparative example 1

(1)Zr原料準備步驟 (1) Zr raw material preparation steps

一面攪拌一面使3.0kg氧氯化鋯八水合物(昭和化學股份有限公司製造)與0.70kg硫酸銨(東亞合成股份有限公司製造)溶解於6.7L離子交換水中。一面攪拌該溶液一面調整為25℃,維持該溫度,並歷時1小時一面攪拌一面添加180g/L之氫氧化鈉水溶液直至pH值成為9.5,進一步攪拌1小時。對該漿料進行過濾水洗,水洗直至洗液之導電率成為100μS/cm以下,藉此獲得氫氧化鋯濾餅。 3.0 kg of zirconium oxychloride octahydrate (manufactured by Showa Chemical Co., Ltd.) and 0.70 kg of ammonium sulfate (manufactured by Toagosei Co., Ltd.) were dissolved in 6.7 L of ion-exchanged water while stirring. The solution was adjusted to 25 ° C while stirring, and the temperature was maintained, and a 180 g/L sodium hydroxide aqueous solution was added while stirring for 1 hour until the pH became 9.5, and the mixture was further stirred for 1 hour. The slurry was filtered and washed with water, and washed with water until the conductivity of the washing liquid became 100 μS/cm or less, whereby a zirconium hydroxide filter cake was obtained.

(2)乾燥步驟~(5)粉碎步驟與實施例1相同地進行,而獲得比較用研磨材料。 (2) Drying Step - (5) The pulverizing step was carried out in the same manner as in Example 1 to obtain a comparative abrasive.

比較例2 Comparative example 2

於130℃使(1)Zr原料準備步驟中所獲得之氫氧化鋯濾餅乾燥15小時,除此以外,與實施例1相同地進行,而獲得比較用研磨材料。 The comparative abrasive material was obtained in the same manner as in Example 1 except that the zirconium hydroxide cake obtained in the (1) Zr raw material preparation step was dried at 130 ° C for 15 hours.

比較例3、4 Comparative example 3, 4

將(4)煅燒步驟中之煅燒溫度變更為表1中記載之溫度,除此以外,與比較例2相同地進行,而獲得比較用研磨材料。 The polishing material for comparison was obtained in the same manner as in Comparative Example 2 except that the firing temperature in the (4) calcination step was changed to the temperature shown in Table 1.

<性能評價> <Performance evaluation>

按照以下之順序,對各實施例及比較例中製作之研磨材料及其原料之性能進行評價。 The properties of the abrasive materials and the raw materials produced in the respective examples and comparative examples were evaluated in the following order.

(i)半高寬之測定 (i) Determination of full width at half maximum

對Zr原料(鋯化合物)及研磨材料之各者,按照以下之條件測定粉末X射線繞射圖案(亦簡稱為X射線繞射圖案)。 Each of the Zr raw material (zirconium compound) and the abrasive material was measured for the powder X-ray diffraction pattern (also simply referred to as an X-ray diffraction pattern) under the following conditions.

使用機器:Rigaku股份有限公司製造RINT-UltimaIII Using the machine: Rigaku Co., Ltd. manufactures RINT-UltimaIII

放射源:CuK α Radioactive source: CuK α

電壓:40kV Voltage: 40kV

電流:40mA Current: 40mA

試樣旋轉速度:不旋轉 Sample rotation speed: no rotation

發散狹縫:1.00mm Divergence slit: 1.00mm

發散縱限制狹縫:10mm Divergence longitudinal limit slit: 10mm

散射狹縫:開放 Scattering slit: open

受光狹縫:開放 Light receiving slit: open

掃描模式:FT Scan mode: FT

計數時間:2.0秒 Counting time: 2.0 seconds

步距:0.0200° Step distance: 0.0200°

操作軸:2 θ/θ Operating axis: 2 θ / θ

掃描範圍:10.0000~70.0000° Scan range: 10.0000~70.0000°

累計次數:1次 Cumulative number: 1 time

單斜晶ZrO2:JCPDS卡00-037-1484 Monoclinic ZrO 2 : JCPDS card 00-037-1484

正方晶ZrO2:JCPDS卡00-050-1089 Square crystal ZrO 2 : JCPDS card 00-050-1089

立方晶ZrO2:JCPDS卡00-049-1642 Cubic ZrO 2: JCPDS Card 00-049-1642

斜方晶SrZrO3:JCPDS卡00-044-0161 Orthorhombic SrZrO 3 : JCPDS Card 00-044-0161

此後,根據藉由各實施例及比較例中獲得之研磨材料之X射線繞射的測定所獲得之繞射圖案,測定斜方晶SrZrO3(040)半高寬。將結果示於表2。 Thereafter, the rhombohedral SrZrO 3 (040) full width at half maximum was measured based on the diffraction pattern obtained by the measurement of the X-ray diffraction of the abrasive obtained in each of the examples and the comparative examples. The results are shown in Table 2.

再者,於使用CuK α射線作為放射源之X射線繞射中,單斜晶ZrO2之最大波峰即來自(-111)面之波峰位於2 θ=28.14°附近,正方晶ZrO2之最大波峰即來自(011)面之波峰位於2 θ=30.15°附近,立方晶ZrO2之最大波峰即來自(111)面之波峰位於2 θ=30.12°附近,斜方晶SrZrO3之來自(040)面之波峰位於2 θ=44.04°附近。 Further, using CuK α ray radiation source of the X-ray diffraction, the maximum peak of monoclinic ZrO 2 i.e. from the (-111) face of the peak near 2 θ = 28.14 °, the maximum peak of tetragonal ZrO 2 of That is, the peak from the (011) plane is located near 2 θ=30.15°, the peak of the cubic ZrO 2 is the peak from the (111) plane at 2 θ=30.12°, and the orthorhombic SrZrO 3 is from the (040) plane. The peak is located near 2 θ=44.04°.

(ii)元素分析 (ii) Elemental analysis

對Zr原料(鋯化合物)及研磨材料之各者,藉由螢光X射線分析裝置(Rigaku股份有限公司製造:型號ZSX PrimusII)之作為含有元素掃描功能之EZ掃描進行元素分析。 Each of the Zr raw material (zirconium compound) and the abrasive material was subjected to elemental analysis by an EZ scan containing an elemental scanning function by a fluorescent X-ray analyzer (manufactured by Rigaku Co., Ltd.: model ZSX Primus II).

具體而言,將經加壓之樣品安放於測定樣品台,選擇如下條件(測定範圍:F-U,測定直徑:30mm,試樣形態:氧化物,測定時間:較長;環境:真空),藉此測定Zr原料中之SO3含量、及研磨材料中之Sr含量(SrO換算)及SO3含量。將結果示於表2。 Specifically, the pressurized sample was placed on the measurement sample stage, and the following conditions were selected (measurement range: FU, measurement diameter: 30 mm, sample form: oxide, measurement time: long; environment: vacuum), thereby The content of SO 3 in the Zr raw material and the Sr content (in terms of SrO) and the SO 3 content in the abrasive material were measured. The results are shown in Table 2.

基於以此方式求得之Zr原料中之SO3含量,算出相對於Zr原料之ZrO2換算量100重量份的SO3含量(重量份)。將其示於表2之「SO3 ※1(重量份)」欄。 Based on the SO 3 content in the Zr raw material obtained in this manner, the SO 3 content (parts by weight) based on 100 parts by weight of the ZrO 2 equivalent amount of the Zr raw material was calculated. This is shown in the column "SO 3 *1 (parts by weight)" in Table 2.

又,基於如上述方式求得之研磨材料中之SO3含量,算出相對於研磨材料中所含之鋯化合物之ZrO2換算量100重量份的SO3含量(重量份)。將其示於表 2之「SO3 ※2(重量份)」欄。 In addition, based on the SO 3 content in the polishing material obtained as described above, the SO 3 content (parts by weight) based on 100 parts by weight of the ZrO 2 equivalent amount of the zirconium compound contained in the polishing material was calculated. This is shown in the column "SO 3 * 2 (parts by weight)" in Table 2.

(iii)比表面積之測定 (iii) Determination of specific surface area

對Zr原料(鋯化合物)及研磨材料之各者,按照以下之條件進行比表面積之測定。將結果示於表2。 For each of the Zr raw material (zirconium compound) and the abrasive, the specific surface area was measured under the following conditions. The results are shown in Table 2.

使用機器:Mountech股份有限公司公司製造Macsorb Model HM-1220 Use machine: Mosorbtech Co., Ltd. manufactures Macsorb Model HM-1220

環境:氮氣(N2) Environment: nitrogen (N 2 )

外部脫氣裝置之脫氣條件:200℃-15分鐘 Degassing condition of external degassing device: 200 ° C - 15 min

比表面積測定裝置本體之脫氣條件:200℃-5分鐘 Degassing condition of the body of the specific surface area measuring device: 200 ° C - 5 min

(iv)粒度分佈之銳度(D90/D10) (iv) Sharpness of particle size distribution (D 90 /D 10 )

針對研磨材,利用雷射繞射、散射式粒度分析儀(日機裝股份有限公司製造:型號Microtrac MT3300EX)進行粒度分佈測定。 For the abrasive material, the particle size distribution measurement was performed using a laser diffraction and scattering particle size analyzer (manufactured by Nikkiso Co., Ltd.: model Microtrac MT3300EX).

首先,向0.1g研磨材料中加入60mL離子交換水,用玻璃棒於室溫下充分攪拌,藉此準備研磨材料之懸浮液。再者,不進行使用超音波之分散操作。此後,於試樣循環器中準備180mL離子交換水,以使透過率成為0.71~0.94之方式滴加上述懸浮液,以流速50%,不進行超音波分散而使之循環並進行測定。 First, 60 mL of ion-exchanged water was added to 0.1 g of the abrasive, and the mixture was thoroughly stirred at room temperature with a glass rod to prepare a suspension of the abrasive. Furthermore, the dispersion operation using ultrasonic waves is not performed. Thereafter, 180 mL of ion-exchanged water was prepared in a sample circulator, and the suspension was added dropwise so that the transmittance was 0.71 to 0.94, and the flow rate was 50%, and the ultrasonic wave was not dispersed and circulated and measured.

(v)鋯化合物(氫氧化鋯)之示差熱-熱重量測定 (v) Differential thermal-thermal gravimetric determination of zirconium compounds (zirconium hydroxide)

為了研究於在鋯化合物中含有硫化合物之情形時研磨材料之研磨速度降低之原因,而對實施例1及比較例1中使用之Zr原料(氫氧化鋯)之各者,於130℃使其乾燥12小時之後,進行示差熱-熱重量分析(TG/DTA)。 In order to investigate the reason why the polishing rate of the abrasive material was lowered when the sulfur compound was contained in the zirconium compound, the Zr raw materials (zirconium hydroxide) used in Example 1 and Comparative Example 1 were subjected to 130 ° C at 130 ° C. After drying for 12 hours, differential thermal-thermogravimetric analysis (TG/DTA) was performed.

具體而言,按照以下之條件,進行示差熱-熱重量測定(TG/DTA)。將該測定結果示於圖1-1及圖1-2。亦對實施例1之「(3)乾燥步驟」中獲得之混合物之乾燥物、及比較例1之「(3)乾燥步驟」中獲得之混合物之乾燥物同樣地進 行示差熱-熱重量測定(TG/DTA)。將該測定結果示於圖2-1及圖2-2。 Specifically, differential thermo-thermogravimetric measurement (TG/DTA) was carried out under the following conditions. The measurement results are shown in Fig. 1-1 and Fig. 1-2. The dried product of the mixture obtained in the "(3) drying step of Example 1 and the dried product of the mixture obtained in the "(3) drying step" of Comparative Example 1 were similarly advanced. Differential thermal-thermogravimetric determination (TG/DTA). The measurement results are shown in Fig. 2-1 and Fig. 2-2.

測定機器:Rigaku股份有限公司製造,示差熱-熱重量測定裝置(型號:Thermo plus EVO2 TG8121) Measuring machine: manufactured by Rigaku Co., Ltd., differential heat-thermal weight measuring device (Model: Thermo plus EVO2 TG8121)

升溫速度:10℃/分鐘 Heating rate: 10 ° C / min

測定溫度範圍:30~1200℃ Measuring temperature range: 30~1200°C

測定環境:大氣200mL/分鐘 Measurement environment: atmosphere 200mL / min

參考值:Al2O3 Reference value: Al 2 O 3

樣品重量:10.0mg Sample weight: 10.0mg

試樣容器:鉑 Sample container: platinum

(vi)玻璃板研磨試驗 (vi) Glass plate grinding test

1、首先,使用各研磨材料製作研磨材漿料。 1. First, an abrasive slurry is prepared using each of the abrasive materials.

具體而言,以使研磨材料之濃度成為5.0重量%之方式,將研磨材料添加至離子交換水中。進而,於25℃攪拌10分鐘,藉此使之分散而製作水分散系研磨材漿料。 Specifically, the abrasive is added to the ion-exchanged water so that the concentration of the abrasive is 5.0% by weight. Further, the mixture was stirred at 25 ° C for 10 minutes to be dispersed to prepare a water-dispersed abrasive slurry.

2、其次,按照以下之條件,使用各研磨材漿料進行玻璃板之研磨。 2. Next, the glass plate was polished using each of the abrasive materials in accordance with the following conditions.

使用玻璃板:鈉鈣玻璃(松浪硝子工業股份有限公司製造,尺寸36×36×1.3mm比重2.5g/cm3) Use glass plate: soda-lime glass (manufactured by Songlang Glass Industry Co., Ltd., size 36×36×1.3mm specific gravity 2.5g/cm 3 )

研磨機:桌上型研磨機(MAT股份有限公司製造,MAT BC-15C,研磨定盤徑300mm ) Grinding machine: desktop grinding machine (manufactured by MAT Co., Ltd., MAT BC-15C, grinding plate diameter 300mm )

研磨墊:發泡聚胺酯墊(NITTA.HAAS股份有限公司製造,MHN-15A,未含浸氧化鈰) Grinding pad: foamed polyurethane pad (manufactured by NITTA.HAAS Co., Ltd., MHN-15A, not impregnated with barium oxide)

研磨壓力:101g/cm2 Grinding pressure: 101g/cm 2

定盤轉數:70rpm Fixed number of revolutions: 70rpm

研磨材組成物之供給量:100mL/min Supply of abrasive composition: 100mL/min

研磨時間:60min Grinding time: 60min

3、利用電子天平對玻璃板研磨試驗前後之玻璃板之重量進行測定。根據重量減少量、玻璃板之面積、玻璃板之比重,算出玻璃板之厚度減少量,並算出研磨速度(μm/min)。 3. The weight of the glass plate before and after the glass plate grinding test was measured by an electronic balance. The amount of decrease in the thickness of the glass plate was calculated from the weight reduction amount, the area of the glass plate, and the specific gravity of the glass plate, and the polishing rate (μm/min) was calculated.

同時研磨3片玻璃板,於研磨60分鐘後交換玻璃板與研磨材漿料。進行3次該操作,將共9片之研磨速度之平均值作為各實施例及比較例中之研磨速度之值,將結果彙總示於表2。 At the same time, three glass plates were ground, and the glass plate and the abrasive slurry were exchanged after grinding for 60 minutes. This operation was carried out three times, and the average of the polishing rates of a total of nine sheets was taken as the value of the polishing rate in each of the examples and the comparative examples, and the results are shown in Table 2.

若研磨速度為0.29μm/min以上,則極佳(◎),若為0.22μm/min以上且未達0.29μm/min,則良好(○),若未達0.22μm/min,則不佳(×)。 When the polishing rate is 0.29 μm/min or more, it is excellent (?), and if it is 0.22 μm/min or more and less than 0.29 μm/min, it is good (○), and if it is less than 0.22 μm/min, it is not preferable ( ×).

表2中,「SO3 ※1(重量份)」意指相對於Zr原料(鋯化合物)之ZrO2換算量100重量份的該Zr原料所含之硫化合物之SO3換算量,「SO3 ※2(重量份)」意指相對於研磨材料中所含之鋯化合物之ZrO2換算量100重量份的該研磨材料中所含之硫化合物之SO3換算量。 In Table 2, "SO 3 *1 (parts by weight)" means the SO 3 equivalent amount of the sulfur compound contained in the Zr raw material in terms of ZrO 2 equivalent amount of the Zr raw material (zirconium compound), "SO 3 *2 (parts by weight) means the SO 3 equivalent amount of the sulfur compound contained in the abrasive material in an amount of 100 parts by weight based on the ZrO 2 of the zirconium compound contained in the abrasive.

根據以上之實施例及比較例,確認出以下情況。 According to the above examples and comparative examples, the following cases were confirmed.

關於實施例1中使用之鋯化合物與比較例1中使用之鋯化合物,主要於硫化合物之含量有差異。 The zirconium compound used in Example 1 and the zirconium compound used in Comparative Example 1 differ mainly in the content of the sulfur compound.

若基於該差異,將經過示差熱-熱重量測定之結果進行對比,則根據圖1-1及圖1-2,觀察到任一鋯化合物(氫氧化鋯)中均有未伴隨重量變化之放熱波峰。該情況表示於放熱波峰以下之溫度下無定形之氫氧化鋯為主成分,以放熱波峰之溫度為界限氫氧化鋯結晶化成為氧化鋯,但實施例1中使用之氫氧化鋯之放熱波峰為416℃,比較例1中使用之氫氧化鋯之放熱波峰為506℃。因此,可知比較例1中使用之氫氧化鋯與實施例1中使用之氫氧化鋯相比,結晶化所需之溫度更高,即,於相同煅燒溫度下難以結晶化。 If the results of the differential thermal-thermogravimetric measurement are compared based on the difference, it is observed that any zirconium compound (zirconium hydroxide) has an exothermic change without weight change according to FIGS. 1-1 and 1-2. crest. In this case, the amorphous zirconium hydroxide is a main component at a temperature lower than the exothermic peak, and zirconium hydroxide is crystallized into zirconium oxide at the temperature of the exothermic peak. However, the exothermic peak of zirconium hydroxide used in Example 1 is The exothermic peak of zirconium hydroxide used in Comparative Example 1 at 416 ° C was 506 ° C. Therefore, it is understood that the zirconium hydroxide used in Comparative Example 1 has a higher temperature required for crystallization than the zirconium hydroxide used in Example 1, that is, it is difficult to crystallize at the same calcination temperature.

圖2-1及圖2-2係表示對實施例1或比較例1中使用之鋯化合物(氫氧化鋯)與鍶化合物(碳酸鍶)之混合物之乾燥物(稱為混合粉)進行示差熱-熱重量測定之結果之曲線圖。根據圖2,觀察到任一混合粉中均有未伴隨重量變化之放熱波峰,根據該波峰溫度之差可知,比較例1之混合粉與實施例1之混合粉相比,結晶化所需之溫度更高,即,於相同之煅燒溫度下難以結晶化。 2-1 and 2-2 show differential heat of a dry product (referred to as a mixed powder) of a mixture of a zirconium compound (zirconium hydroxide) and a cerium compound (cerium carbonate) used in Example 1 or Comparative Example 1. - A graph of the results of the thermogravimetric measurement. According to Fig. 2, it was observed that any of the mixed powders had an exothermic peak which was not accompanied by a change in weight. From the difference in peak temperature, it was found that the mixed powder of Comparative Example 1 was required for crystallization as compared with the mixed powder of Example 1. The temperature is higher, that is, it is difficult to crystallize at the same calcination temperature.

如此,放熱波峰之溫度不同之原因在於:由於比較例1中使用之氫氧化鋯中所含之硫化合物之量超過本發明中規定之範圍,該情況亦對最終 所獲得之研磨材料之結晶性產生影響。根據表2,比較例1之研磨材料之斜方晶SrZrO3之來自(040)面的波峰之半高寬及SSA與實施例1之複合金屬氧化物研磨材料相比分別增加。其表示出同於950℃進行煅燒之情形之研磨材料的結晶性較低。又,確認出於比較例1與實施例1中在研磨速度上存在顯著之差異。因此,認為若鋯化合物所含之硫化合物之含量超過本發明中規定之範圍,則研磨材料之結晶性降低,研磨速度降低。 Thus, the reason why the temperature of the exothermic peak is different is that since the amount of the sulfur compound contained in the zirconium hydroxide used in Comparative Example 1 exceeds the range specified in the present invention, the crystallinity of the finally obtained abrasive material is also obtained. Have an impact. According to Table 2, the full width at half maximum of the peak from the (040) plane of the orthorhombic SrZrO 3 of the abrasive of Comparative Example 1 and the SSA were increased as compared with the composite metal oxide abrasive of Example 1. It shows that the abrasive material in the case of calcination at 950 ° C has a low crystallinity. Further, it was confirmed that there was a significant difference in the polishing rate between Comparative Example 1 and Example 1. Therefore, it is considered that if the content of the sulfur compound contained in the zirconium compound exceeds the range specified in the present invention, the crystallinity of the abrasive material is lowered, and the polishing rate is lowered.

比較例3~4之研磨材料與實施例1相比使煅燒溫度增加,藉此提高結晶性。然而,根據表2,儘管比較例3、4之研磨材料之斜方晶SrZrO3之來自(040)面的波峰之半高寬及SSA與實施例1之複合金屬氧化物研磨材料之波峰之半高寬及SSA為相同程度,但研磨速度較低。推測出其原因在於:雖然藉由使煅燒溫度增加而研磨材料之結晶性變為相同程度,但粒子過度燒結。又,比較例2之研磨材料於在130℃乾燥鋯化合物(氫氧化鋯)後供給至與鍶化合物(碳酸鍶)之混合步驟之方面,與實施例1之研磨材料有差異,根據表2,於該情形時,亦因鋯化合物中所含之硫化合物之量超過本發明中規定之範圍,而研磨速度未達到充分之級別。 The abrasive materials of Comparative Examples 3 to 4 increased the calcination temperature as compared with Example 1, thereby improving the crystallinity. However, according to Table 2, although the half-height width of the peak from the (040) plane of the orthorhombic SrZrO 3 of the abrasive materials of Comparative Examples 3 and 4 and the peak of the SSA and the composite metal oxide abrasive material of Example 1 The height and width are the same as the SSA, but the grinding speed is low. It is presumed that the reason is that although the crystallinity of the abrasive material is increased to the same extent by increasing the calcination temperature, the particles are excessively sintered. Further, the abrasive material of Comparative Example 2 was supplied to the mixed material with the cerium compound (cerium carbonate) after drying the zirconium compound (zirconium hydroxide) at 130 ° C, and was different from the abrasive material of Example 1, according to Table 2, In this case as well, since the amount of the sulfur compound contained in the zirconium compound exceeds the range specified in the present invention, the polishing rate does not reach a sufficient level.

根據以上之情況,可知本發明之製造方法能夠效率良好地提供一種於無鈰之研磨材料中具有良好之研磨速度之研磨材料。 From the above, it is understood that the production method of the present invention can efficiently provide an abrasive material having a good polishing rate among flawless abrasive materials.

參考例1 Reference example 1

使用實施例1中製作之複合金屬氧化物研磨材料,製作研磨材漿料A。 Using the composite metal oxide abrasive obtained in Example 1, a slurry slurry A was produced.

具體而言,使20.0g研磨材分散於380.0g離子交換水中,於25℃攪拌10分鐘。如此獲得研磨材漿料A。 Specifically, 20.0 g of the abrasive was dispersed in 380.0 g of ion-exchanged water and stirred at 25 ° C for 10 minutes. The abrasive slurry A was thus obtained.

針對研磨材漿料A,按照以下之條件進行ζ電位之測定。將該研磨材漿 料之ζ電位相對於pH值之關係示於圖3。又,研磨材漿料A之等電點為6.2。此處,等電點係指研磨材漿料中之研磨粒(複合金屬氧化物研磨材料)所帶之電荷之代數和為零之點,即,研磨粒所帶之正電荷與負電荷變為相等之點,能以該點中之研磨材漿料之pH值來表示。 The zeta potential was measured for the polishing slurry A according to the following conditions. Grinding slurry The relationship between the zeta potential and the pH is shown in Figure 3. Further, the isoelectric point of the abrasive slurry A was 6.2. Here, the isoelectric point means that the algebra of the electric charge carried by the abrasive grains (composite metal oxide abrasive material) in the abrasive slurry is zero, that is, the positive and negative charges of the abrasive grains become The point of equalization can be expressed by the pH of the abrasive slurry in this point.

(ζ電位之測定條件) (Measurement conditions of zeta potential)

測定機器:大塚電子股份有限公司製造,ζ電位測定系統,型號ELSZ-1 Measuring machine: manufactured by Otsuka Electronics Co., Ltd., zeta potential measuring system, model ELSZ-1

pH值滴定器:大塚電子股份有限公司製造,型號ELS-PT pH titrator: manufactured by Otsuka Electronics Co., Ltd., model ELS-PT

使用離子交換水將6g研磨材漿料稀釋5倍,一面用玻璃棒進行攪拌一面藉由超音波洗淨機使其分散1分鐘。向10cc該漿料中加入50cc離子交換水,利用超音波均質機(US-600,日本精機製作所製造),將強度設定為V-LEVEL3進行1分鐘分散處理。將30cc以此方式獲得之ζ電位測定用研磨材漿料填充至ζ電位測定機。 6 g of the abrasive slurry was diluted 5 times with ion-exchanged water, and the mixture was stirred by a glass rod while being dispersed by an ultrasonic cleaner for 1 minute. 50 cc of ion-exchanged water was added to 10 cc of this slurry, and the intensity was set to V-LEVEL3 by the ultrasonic homogenizer (US-600, manufactured by Nippon Seiki Co., Ltd.), and the dispersion treatment was performed for 1 minute. 30 cc of the zeta potential measurement slurry slurry obtained in this manner was filled in a zeta potential measuring machine.

再者,關於使用後述之膠體二氧化矽之研磨材漿料C,利用超音波均質機(US-600,日本精機製作所製造),將強度設定為V-LEVEL3對60cc研磨材漿料C進行1分鐘分散處理。將30cc以此方式獲得之ζ電位測定用研磨材漿料填充至ζ電位測定機。 In addition, the abrasive slurry C using the colloidal cerium oxide described later is subjected to an ultrasonic homogenizer (US-600, manufactured by Nippon Seiki Co., Ltd.), and the strength is set to V-LEVEL3 to 60 cc of the abrasive slurry C. Minute dispersion processing. 30 cc of the zeta potential measurement slurry slurry obtained in this manner was filled in a zeta potential measuring machine.

再者,為了調整研磨材漿料之pH值,視需要使用以下之pH值調整劑。 Further, in order to adjust the pH of the polishing slurry, the following pH adjusting agent is used as needed.

酸性側pH值調整溶液:鹽酸水溶液,0.1mol/L Acid side pH adjustment solution: aqueous hydrochloric acid solution, 0.1mol/L

鹼性側pH值調整溶液:氫氧化鈉水溶液,1mol/L Alkaline side pH adjustment solution: aqueous sodium hydroxide solution, 1 mol/L

(1)第1研磨步驟 (1) First grinding step

以使如上述方式獲得之研磨材漿料A之ζ電位成為表3中所示之值之方 式對漿料之pH值進行調整。在該漿料之存在下,於與實施例1之「(vi)玻璃板研磨試驗」相同之研磨條件下進行玻璃板之研磨,測定研磨速度。將該步驟中之研磨速度及研磨材漿料A之pH值示於表3。進而,按照以下之方法對第1研磨步驟後之玻璃基板之表面粗糙度進行評價。將結果示於表3。 The zeta potential of the abrasive slurry A obtained as described above is the value shown in Table 3. The pH of the slurry is adjusted. In the presence of the slurry, the glass plate was polished under the same polishing conditions as in the "(vi) glass plate polishing test" of Example 1, and the polishing rate was measured. The polishing rate in this step and the pH value of the polishing slurry A are shown in Table 3. Further, the surface roughness of the glass substrate after the first polishing step was evaluated by the following method. The results are shown in Table 3.

(2)第2研磨步驟 (2) Second grinding step

於上述第1研磨步驟之後取出研磨材漿料A,更換為新的研磨材漿料A,以使該ζ電位變為表3中所示之值之方式對漿料之pH值進行調整,然後在該漿料之存在下,於與第1研磨步驟相同之研磨條件下進行玻璃基板之研磨,測定研磨速度。將該步驟中之研磨速度及研磨材漿料A之pH值示於表3。進而,按照以下之方法,對第2研磨步驟後之玻璃基板之表面粗糙度進行評價。將結果示於表3。 After the first polishing step, the abrasive slurry A is taken out, and replaced with a new abrasive slurry A, and the pH of the slurry is adjusted so that the zeta potential becomes the value shown in Table 3, and then In the presence of the slurry, the glass substrate was polished under the same polishing conditions as in the first polishing step, and the polishing rate was measured. The polishing rate in this step and the pH value of the polishing slurry A are shown in Table 3. Further, the surface roughness of the glass substrate after the second polishing step was evaluated by the following method. The results are shown in Table 3.

(玻璃基板之表面平滑性之測定) (Measurement of surface smoothness of glass substrate)

針對各研磨步驟後之玻璃板,按照以下之條件進行表面粗糙度之測定。 The surface roughness of the glass plate after each polishing step was measured according to the following conditions.

測定機器:ZYGO股份有限公司製造,白色干涉顯微鏡,型號NewViewTM7100 Measuring machine: manufactured by ZYGO Co., Ltd., white interference microscope, model NewView TM 7100

水平解析度:<0.1nm Horizontal resolution: <0.1nm

物鏡:50倍 Objective lens: 50 times

濾光器:無 Filter: None

測定視野尺寸:X=186μm、Y=139μm Measuring field size: X = 186 μm, Y = 139 μm

評價方法:針對研磨後之玻璃基板,對中心點、及自中心點半徑為6mm、12mm之同心圓與玻璃基板之對角線之交點的共9點之Ra進行測定,算出平均值。對用於上述研磨速度之測定之共9片玻璃基板進行該操作,使用各玻璃基板之Ra之平均值進行平均,藉此評價表面粗糙度。 Evaluation method: For the polished glass substrate, the center point and the Ra of 9 points from the intersection of the concentric circles having the center point radius of 6 mm and 12 mm and the diagonal of the glass substrate were measured, and the average value was calculated. This operation was performed on a total of nine glass substrates used for the measurement of the polishing rate described above, and the average value of Ra of each glass substrate was averaged to evaluate the surface roughness.

比較參考例1 Comparative reference example 1

(1)第1研磨步驟 (1) First grinding step

使用玻璃研磨用氧化鈰質研磨材(昭和電工股份有限公司製造,SHOROX(R)A-10,氧化鈰含量:60重量%,等電點:10.4)作為研磨材,除此以外,與參考例1相同地製作研磨材漿料B。於以使該研磨材漿料B之ζ電位變為表3中所示之值之方式對漿料之pH值進行調整後,在該漿料之存在下,於與實施例1之「(vi)玻璃板研磨試驗」相同之研磨條件下進行玻璃板之研磨,測定研磨速度。將該步驟中之研磨速度及研磨材漿料B之pH值示於表3。進而,對第1研磨步驟後之玻璃基板之表面粗糙度與參考例1相同地進行評價。將結果示於表3。 An oxidized enamel polishing material for glass polishing (manufactured by Showa Denko Co., Ltd., SHOROX (R) A-10, yttria content: 60% by weight, isoelectric point: 10.4) was used as a polishing material, and other examples were given. 1 The abrasive slurry B was produced in the same manner. After adjusting the pH of the slurry so that the zeta potential of the abrasive slurry B becomes the value shown in Table 3, in the presence of the slurry, in "vi with Example 1" The glass plate was ground under the same polishing conditions as in the "glass plate polishing test", and the polishing rate was measured. The polishing rate in this step and the pH value of the polishing slurry B are shown in Table 3. Further, the surface roughness of the glass substrate after the first polishing step was evaluated in the same manner as in Reference Example 1. The results are shown in Table 3.

(2)第2研磨步驟 (2) Second grinding step

將上述第1研磨步驟中使用之研磨材漿料B自研磨機中取出,進行研磨機之洗淨。 The polishing slurry B used in the first polishing step is taken out from the polishing machine and washed by a polishing machine.

另外,使52.2g膠體二氧化矽(扶桑化學工業股份有限公司,Quartron(R)PL-7,等電點:5.8)分散於347.8g離子交換水中,於25℃攪拌10分鐘。準備其作為研磨材漿料C。於以使該另外準備之研磨材漿料C之ζ電位成為表3中所示之值之方式對pH值進行調整後,在該研磨材漿料C之存在下,於與第1研磨步驟相同研磨條件下進行玻璃基板之研磨。將該步驟中之研磨材漿料C之pH值示於表3。又,對第2研磨步驟中之研磨速度、及第2研磨步驟後之玻璃基板之表面粗糙度與參考例1相同地進行評價。將結果示於表3。 Separately, 52.2 g of colloidal cerium oxide (Fussan Chemical Co., Ltd., Quartron (R) PL-7, isoelectric point: 5.8) was dispersed in 347.8 g of ion-exchanged water, and stirred at 25 ° C for 10 minutes. This was prepared as the abrasive slurry C. After adjusting the pH value so that the zeta potential of the separately prepared polishing material slurry C becomes the value shown in Table 3, it is the same as the first polishing step in the presence of the polishing material slurry C. The polishing of the glass substrate was carried out under grinding conditions. The pH of the abrasive slurry C in this step is shown in Table 3. Moreover, the polishing rate in the second polishing step and the surface roughness of the glass substrate after the second polishing step were evaluated in the same manner as in Reference Example 1. The results are shown in Table 3.

再者,將研磨材漿料B、C各者之ζ電位相對於pH值之關係示於圖3。 In addition, the relationship between the zeta potential of each of the abrasive slurry B and C with respect to pH is shown in FIG.

根據上述參考例1及比較參考例1,確認出以下情況。 According to the above Reference Example 1 and Comparative Reference Example 1, the following cases were confirmed.

於參考例1與比較參考例1中,儘管最終所獲得之基板(第2研磨步驟後之基板)之表面粗糙度大致相同,但於參考例1中,與比較參考例1相比研磨速度顯著提高。因此,可知上述較佳之研磨方法(即分別實施至少1次如下步驟之研磨方法:於含有本發明之複合金屬氧化物研磨材料之漿料之ζ電位變為正之條件下研磨負帶電性基板之研磨步驟a、及於該研磨材漿料之ζ電位變為負之條件下研磨負帶電性基板之研磨步驟b)可於無鈰之研磨材料中實現較高之研磨速度與優異之表面平滑性。又,於比較參考例1中,由於在第1研磨步驟使用氧化鈰系研磨材,在第2研磨步驟中使用膠體二氧化矽,故而必須進行研磨機之洗淨作業等,但於參考例1中,由於在第1研磨步驟與第2研磨步驟中使用同種類之研磨材漿料A,故而無需研磨機之洗淨作業等,於作業方面、設備方面非常有利。 In Reference Example 1 and Comparative Reference Example 1, although the surface roughness of the finally obtained substrate (substrate after the second polishing step) was substantially the same, in Reference Example 1, the polishing rate was remarkable as compared with Comparative Reference Example 1. improve. Therefore, it is understood that the above-described preferred polishing method (that is, a polishing method in which at least one of the following steps is performed: polishing of a negatively-charged substrate under conditions in which the zeta potential of the slurry containing the composite metal oxide abrasive of the present invention becomes positive The step a) and the polishing step b) of polishing the negatively-charged substrate under the condition that the zeta potential of the abrasive slurry becomes negative can achieve a higher polishing speed and excellent surface smoothness in the flawless abrasive material. In addition, in Comparative Reference Example 1, since the cerium oxide-based abrasive is used in the first polishing step and the colloidal cerium oxide is used in the second polishing step, it is necessary to perform a cleaning operation of the polishing machine, etc., but in Reference Example 1 In the first polishing step and the second polishing step, the same type of the polishing material slurry A is used, so that the cleaning operation of the polishing machine or the like is not required, which is advantageous in terms of work and equipment.

雖未示於表中,但可確認於參考例1之第2研磨步驟中,即便在未更換為新的研磨材漿料A而直接連續使用第1研磨步驟中使用之研磨材漿料A之情形時,亦幾乎不會對研磨速度及所獲得之基板之表面平滑性產生影響。 Though it is not shown in the table, it can be confirmed that in the second polishing step of Reference Example 1, even if the new abrasive slurry A is not replaced, the abrasive slurry A used in the first polishing step is directly used continuously. In the case, the polishing speed and the surface smoothness of the obtained substrate are hardly affected.

Claims (5)

一種複合金屬氧化物研磨材料之製造方法,其包含下述步驟:混合鍶化合物與鋯化合物之混合步驟、及對藉由該混合步驟所獲得之混合物進行煅燒之煅燒步驟;其特徵在於:該鋯化合物中所含之硫化合物之SO3換算量相對於該鋯化合物之ZrO2換算量100重量份為2.0重量份以下。 A method for producing a composite metal oxide abrasive material, comprising the steps of: mixing a mixing step of a cerium compound with a zirconium compound, and a calcining step of calcining the mixture obtained by the mixing step; characterized in that the zirconium The amount of the SO 3 equivalent of the sulfur compound contained in the compound is 2.0 parts by weight or less based on 100 parts by weight of the ZrO 2 equivalent amount of the zirconium compound. 如申請專利範圍第1項之複合金屬氧化物研磨材料之製造方法,其中,上述混合步驟中之鍶化合物係選自由碳酸鍶及氫氧化鍶所組成之群中之至少1種。 The method for producing a composite metal oxide abrasive according to the first aspect of the invention, wherein the hydrazine compound in the mixing step is at least one selected from the group consisting of cesium carbonate and strontium hydroxide. 如申請專利範圍第1或2項之複合金屬氧化物研磨材料之製造方法,其中,上述混合步驟中之鋯化合物係選自由碳酸鋯及氫氧化鋯所組成之群中之至少1種。 The method for producing a composite metal oxide abrasive according to claim 1 or 2, wherein the zirconium compound in the mixing step is at least one selected from the group consisting of zirconium carbonate and zirconium hydroxide. 如申請專利範圍第1至3項中任一項之複合金屬氧化物研磨材料之製造方法,其中,上述煅燒步驟中之煅燒溫度超過800℃且為1500℃以下。 The method for producing a composite metal oxide abrasive according to any one of claims 1 to 3, wherein the calcination temperature in the calcination step exceeds 800 ° C and is 1500 ° C or lower. 一種複合金屬氧化物研磨材料,其中,該複合金屬氧化物研磨材料中所含之硫化合物之SO3換算量相對於該複合金屬氧化物研磨材料中所含之鋯化合物之ZrO2換算量100重量份為1.2重量份以下。 A composite metal oxide abrasive material, wherein the SO 3 equivalent amount of the sulfur compound contained in the composite metal oxide abrasive material is 100% by weight based on the ZrO 2 of the zirconium compound contained in the composite metal oxide abrasive material. The serving is 1.2 parts by weight or less.
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