TW201637218A - 薄膜電晶體基板、其製作方法及使用之液晶顯示面板 - Google Patents

薄膜電晶體基板、其製作方法及使用之液晶顯示面板 Download PDF

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TW201637218A
TW201637218A TW103146678A TW103146678A TW201637218A TW 201637218 A TW201637218 A TW 201637218A TW 103146678 A TW103146678 A TW 103146678A TW 103146678 A TW103146678 A TW 103146678A TW 201637218 A TW201637218 A TW 201637218A
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film transistor
transistor substrate
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高逸群
林欣樺
李誌隆
方國龍
施博理
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業鑫科技顧問股份有限公司
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Abstract

本發明涉及一種薄膜電晶體基板、其製作方法及使用此薄膜電晶體基板的液晶顯示面板。本發明的薄膜電晶體基板的製作方法，其包括先在一基板上形成薄膜電晶體，然後將該薄膜電晶體基板置於一高於1個標準大氣壓的高壓環境下對該薄膜電晶體基板進行氧離子修補。本發明藉由一高壓環境對薄膜電晶體基板進行氧離子修補，能夠得到具有穩定導電效果的薄膜電晶體基板。

Description

薄膜電晶體基板、其製作方法及使用之液晶顯示面板
本發明涉及一種薄膜電晶體基板、其製作方法及使用此薄膜電晶體基板的液晶顯示面板。
液晶顯示面板因其功耗小、成本低和無輻射等特點，近年來得到了廣泛的應用於各個領域，如家庭、公共場所、辦公場所及個人電子相關產品等。液晶顯示面板一般包括薄膜電晶體基板、對向基板以及夾設在兩基板之間的液晶層。該薄膜電晶體基板包括由複數個薄膜電晶體所組成的陣列。該薄膜電晶體用於控制液晶顯示面板的資料寫入，其包括柵極、溝道層、源極以及漏極等結構。其中，該溝道層通常由非晶矽、多晶矽或金屬氧化物半導體等材料形成。但是，使用金屬氧化物半導體作為溝道層的薄膜電晶體基板在製造過程中容易因為在形成源極與漏極等結構時對該溝道層造成影響，導致電子遷移率下降，導電效果不穩定，從而影響液晶顯示器的顯示效果。
鑒於此，有必要提供一種可以提高薄膜電晶體性能的薄膜電晶體基板的製作方法。
進一步，提供一種由前述方法製作的薄膜電晶體基板及具有此薄膜電晶體基板的液晶顯示面板。
一種薄膜電晶體基板的製作方法，其包括如下步驟：
提供一基板；
於該基板上形成薄膜電晶體；
於該薄膜電晶體上形成鈍化層及畫素電極層，該畫素電極層與該薄膜電晶體的漏極電性連接；
將形成有該鈍化層及該畫素電極層的該薄膜電晶體基板置於一大氣壓強為2個標準大氣壓到7個標準大氣壓的高壓環境下以增加該溝道層的氧離子濃度。
一種薄膜電晶體基板，該薄膜電晶體基板採用上述的製作方法製得。
一種液晶顯示面板，其包括薄膜電晶體基板、與該薄膜電晶體基板相對設置的對向基板及夾於該薄膜電晶體基板與該對向基板之間的液晶層，該薄膜電晶體基板採用上述製作方法製作的薄膜電晶體基板。
相較於習知技術，本發明所提供的薄膜電晶體基板、其製作方法及使用此薄膜電晶體基板的液晶顯示面板，藉由一高於標準大氣壓強的高壓環境對薄膜電晶體基板進行氧離子修補，能夠得到具有穩定導電效果的薄膜電晶體基板。
圖1為本發明一較佳實施方式所提供的薄膜電晶體基板的製作流程圖。
圖2至圖11為本發明具體實施方式薄膜電晶體基板之製作方法各部流程的剖視圖。
圖12為本發明一較佳實施方式所提供的液晶顯示面板的剖視圖。
如圖1所示，其為本發明一較佳實施方式所提供的薄膜電晶體基板11的製作方法的流程圖，請同時參閱圖2至圖11，該方法包括如下步驟：
步驟S101，提供第一基底110，並在該第一基底110上形成柵極1110。具體地，如圖2所示，首先提供第一基底110，並在該第一基底110上形成第一金屬層20。該第一基底110的材質可以選自玻璃、石英、有機聚合物或其它可適用的透明材料。該第一金屬層20的材質通常為金屬材料，但也可以使用其它導電材料，如合金、金屬氧化物、金屬氮化物或金屬氮氧化物等。接著，如圖3所示，利用光蝕刻工藝來圖案化第一金屬層20以定義出該柵極1110。另外，在形成柵極1110的同時，也可以同時定義出與柵極1110電性連接的掃描線（圖未示）。
步驟S102，如圖4所示，在該第一基底110與該柵極1110上沉積柵極絕緣層1111以覆蓋該第一基底110及該柵極1110。該柵極絕緣層1111的材質可以選自無機材料（例如氧化矽、氮化矽以及氮氧化矽等）、有機材料或其它可適用的材料等。該柵極絕緣層1111形成的方法包括等離子體化學氣相沉積工藝等。
步驟S103，在該柵極絕緣層1111上正對該柵極1110的位置形成溝道層1112。具體地，首先，如圖5所示，在該柵極絕緣層1111上沉積一金屬氧化物半導體層30。該金屬氧化物半導體層30的材質可以為銦鎵鋅氧化物（Indium Gallium Zinc Oxide，IGZO）等。然後，如圖6所示，利用光蝕刻工藝來圖案化該金屬氧化物半導體層30，以在該柵極絕緣層1111上正對該柵極1110的位置形成該溝道層1112。
步驟S104，形成覆蓋該柵極絕緣層1111及該溝道層1112的第二金屬層40以及覆蓋該第二金屬層40的光阻層50，對該第二金屬層40進行圖案化蝕刻，以得到源極1113及漏極1114。具體地，如圖7所示，依次在該柵極絕緣層1111及該溝道層1112上形成該第二金屬層40及光阻層50。與第一金屬層20類似，該第二金屬層40的材質通常也為金屬材料，但也可以使用其它導電材料，例如合金、金屬氧化物、金屬氮化物或金屬氮氧化物等。接著，對該光阻層50進行圖案化曝光顯影並對該第二金屬層40進行蝕刻，得到如圖8所示的，形成在該柵極絕緣層1111上且分別與該溝道層1112的相對兩端連接的源極1113和漏極1114，得到形成於該第一基底110上的薄膜電晶體111。另外，在形成源極1113和漏極1114的同時，也可以同時定義出與源極1113電性連接的資料線（圖未示）。
步驟S105，如圖9所示，形成一層鈍化層112於該薄膜電晶體111上，且該鈍化層112覆蓋該薄膜電晶體111。在形成該鈍化層112的同時，在該鈍化層112上與該漏極1114對應的位置形成接觸孔1121。該鈍化層112的材質可以選自無機材料（例如矽的氧化物、矽的氮化物或氮氧化矽等）、有機材料或其它可適用的材料及其組合。本實施方式中，該鈍化層112的材質選用矽的氮化物。
步驟S16，如圖10所示，依次形成公共電極層114、絕緣層115及畫素電極層113於該鈍化層112上。形成該絕緣層115的同時，在該絕緣層115上與該接觸孔1121對應的位置形成貫穿該絕緣層115的通孔1151，該通孔1151與該接觸孔1121連通，以暴漏處該漏極1114，該畫素電極層113藉由該通孔1151及該接觸孔1121與該漏極1114電性連接。該絕緣層115的材質可以選自無機材料（例如矽的氧化物、矽的氮化物或氮氧化矽等）、有機材料或其它可適用的材料及其組合。本實施方式中，該絕緣層115選用矽的氮化物。
步驟S107，如圖11所示，對該薄膜電晶體基板11進行氧離子修補。由於在前述各步驟中，尤其是在步驟S104製作源極1113及漏極1114的過程中，會對溝道層1112中的氧離子濃度有一定的破壞，導致該溝道層1112中氧離子濃度降低，影響了該溝道層1112的導電能力。因此，在該薄膜電晶體基板11製作完成後，需要對該薄膜電晶體基板11進行氧離子的修補，以增加該溝道層1112中的氧離子濃度，但是由於該溝道層1112上有至少一層該鈍化層112、該源極1113、該漏極1114、該公共電極層114、該絕緣層115及該畫素電極層113等結構的阻擋，尋常情況下氧氣很難進入到該溝道層1112來進行氧離子的修補。
因此，將上述步驟S16製得的形成有該鈍化層112、該公共電極層114、該絕緣層115及該畫素電極層113的薄膜電晶體基板11放置於一溫度範圍為200度到500度、大氣壓強為2個標準大氣壓到7個標準大氣壓、氧氣濃度為20%到50%的高溫高壓高氧氣濃度的環境下，對該薄膜電晶體基板11進行氧離子修補。本實施方式中，該薄膜電晶體基板11在一退火腔室中進行退火及氧離子修補，該高溫高壓高氧離子濃度的環境是形成於退火腔室中的。優選的，本實施方式中，具有該高溫高壓高氧氣濃度的環境的退火腔室中溫度值為350度，氣壓值為3個大氣壓到5個大氣壓。在上述環境中對該薄膜電晶體基板11進行氧離子修補，具有較好的增加溝道層1112的氧離子濃度效果的同時，氧氣並不會與該源極1113及該漏極1114反應，不會對該源極1113及該漏極1114造成不良影響。
至此，該薄膜電晶體基板11製作完成。本實施方式中，雖然是以底柵極式的薄膜電晶體基板為例進行說明的，但本發明的薄膜電晶體基板的製作方法並不局限於底柵極式的薄膜電晶體基板，如在其他實施方式中，本發明的製作方法也可試用於頂柵極式的薄膜電晶體基板。
由於氧氣的進入方向及修補的先後的問題，該溝道層1112遠離該柵極絕緣層1111一側的區域中的氧離子的濃度，大於該溝道層1112靠近該柵極絕緣層1111一側的區域中的氧離子的濃度。
請參閱圖12，圖12是本發明一較佳實施方式所提供的液晶顯示面板10的剖面示意圖。該液晶顯示面板10包括薄膜電晶體基板11、與該薄膜電晶體基板11相對設置之對向基板12及夾於該薄膜電晶體基板11與該對向基板12之間的液晶層13。該薄膜電晶體基板11包括第一基底110、薄膜電晶體111、鈍化層112、畫素電極層113及公共電極層114。該薄膜電晶體111設置於該第一基底110上，該鈍化層112覆蓋該薄膜電晶體111，該畫素電極層113設置於該鈍化層112上並與該薄膜電晶體111電連接，該公共電極層114位於該鈍化層112與該畫素電極層113之間，並與該畫素電極層113絕緣設置。該薄膜電晶體111包括柵極1110、柵極絕緣層1111、溝道層1112、源極1113及漏極1114，該柵極1110設置於該第一基底110上，該柵極絕緣層1111覆蓋該柵極1110及該第一基底110，該溝道層1112位於該柵極絕緣層1111上並對應設置於該柵極1110的上方，該源極1113及該漏極1114位於該柵極絕緣層1111上且分別與該溝道層1112的相對兩端連接。該對向基板12還包括第二基底120及彩色濾光片121，該彩色濾光片121設置於該第二基底120鄰近該液晶層13一側。本實施方式中，該第一基底110及該第二基底可以為透光(如玻璃、石英、或類似物)或不透光(如晶片、陶瓷、或類似物)的剛性無機材質，亦可為塑膠、橡膠、聚酯、或聚碳酸酯等可撓性有機材質。本實施方式中，該薄膜電晶體基板11使用圖11所示的薄膜電晶體基板。
其中，該液晶顯示面板10可以是平面電場切換型(In-Plane Switching, IPS)液晶顯示面板或邊緣電場切換型(Fringing Field Switching, FFS)液晶顯示面板，該公共電極層114與該畫素電極層113用於產生驅動該液晶層13的液晶分子在平面內旋轉的電場。
具體地，該公共電極層114設置於該鈍化層112上，該薄膜電晶體基板11還包括絕緣層115，該絕緣層115設置於該公共電極層114上，該絕緣層115覆蓋於該公共電極層114及鈍化層112上，該畫素電極層113設置於該絕緣層115上。該鈍化層112包括貫穿該鈍化層112的接觸孔1121，該接觸孔1121對應設置於該漏極1114的上方，該接觸孔1121暴露出該漏極1114。該絕緣層115包括貫穿該絕緣層115的通孔1151，該通孔1151的位置與該接觸孔1113相對應設置。該畫素電極層113經由該通孔1151及該接觸孔1121與該漏極1114電連接。其中，該公共電極層114與該畫素電極層113的材料可以均為透明導電層，如氧化銦錫（Indium tin oxide，ITO）等。
本實施方式中，該畫素電極層113中還形成有複數個第一開口1131，該公共電極層114對應形成複數個第二開口1141，複數個該第一開口1131及複數個該第二開口1141交錯設置。但並不局限於此，如在其他變更實施例中，當該液晶顯示面板10為邊緣電場切換型液晶顯示面板時，該公共電極層114也可以不設置該複數個第二開口1141或者該畫素電極層113中不設置第一開口1131。
綜上所述，本發明確已符合發明專利之要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，本發明之範圍並不以上述實施例為限，該舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。
11‧‧‧薄膜電晶體基板
110‧‧‧第一基底
1110‧‧‧柵極
20‧‧‧第一金屬層
1111‧‧‧柵極絕緣層
1112‧‧‧溝道層
30‧‧‧金屬氧化物半導體層
40‧‧‧第二金屬層
50‧‧‧光阻層
1113‧‧‧源極
1114‧‧‧漏極
111‧‧‧薄膜電晶體
112‧‧‧鈍化層
1121‧‧‧接觸孔
114‧‧‧公共電極層
115‧‧‧絕緣層
113‧‧‧畫素電極層
1151‧‧‧通孔
12‧‧‧對向基板
13‧‧‧液晶層
120‧‧‧第二基底
121‧‧‧彩色濾光片
1131‧‧‧第一開口
1141‧‧‧第二開口
無
11‧‧‧薄膜電晶體基板
111‧‧‧薄膜電晶體
112‧‧‧鈍化層
114‧‧‧公共電極層
115‧‧‧絕緣層
113‧‧‧畫素電極層

Claims (8)

  1. 一種薄膜電晶體基板的製作方法，其包括如下步驟：
    提供一基板；
    於該基板上形成薄膜電晶體；
    於該薄膜電晶體上形成鈍化層及畫素電極層，該畫素電極層與該薄膜電晶體的漏極電性連接；
    將形成有該鈍化層及該畫素電極層的該薄膜電晶體基板置於一大氣壓強為2個標準大氣壓到7個標準大氣壓的高壓環境下以增加該溝道層的氧離子濃度。
  2. 如請求項1所述的薄膜電晶體基板的製作方法，其中，該高壓環境的溫度範圍選取為200度到500度之間。
  3. 如請求項1所述的薄膜電晶體基板的製作方法，其中，該高壓環境中氧氣的濃度為20%到50%。
  4. 如請求項1所述的薄膜電晶體基板的製作方法，其中，該溝道層遠離該柵極絕緣層的一側的氧離子的濃度大於該溝道層靠近該柵極絕緣層的一側的氧離子的濃度。
  5. 如請求項1所述的薄膜電晶體基板的製作方法，其中，該高壓環境形成於一大氣壓強為2個標準大氣壓到7個標準大氣壓的高壓退火腔室內。
  6. 如請求項1所述的薄膜電晶體基板的製作方法，其中，該鈍化層及該絕緣層的材質為矽的氮化物。
  7. 一種薄膜電晶體基板，其中，該薄膜電晶體基板採用請求項1-6項任一項所述的製作方法製得。
  8. 一種液晶顯示面板，其包括薄膜電晶體基板、與該薄膜電晶體基板相對設置的對向基板及夾於該薄膜電晶體基板與該對向基板之間的液晶層，該薄膜電晶體基板採用請求項1-6項任一項所述的製作方法製作的薄膜電晶體基板。
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