TW201634551A - Semiconductor light emitting device, resin composition for forming reflection body, and lead frame provided with reflector - Google Patents

Semiconductor light emitting device, resin composition for forming reflection body, and lead frame provided with reflector Download PDF

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TW201634551A
TW201634551A TW105101954A TW105101954A TW201634551A TW 201634551 A TW201634551 A TW 201634551A TW 105101954 A TW105101954 A TW 105101954A TW 105101954 A TW105101954 A TW 105101954A TW 201634551 A TW201634551 A TW 201634551A
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reflector
emitting device
semiconductor light
resin composition
resin
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TW105101954A
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Toshiyuki Sakai
Satoru Kanke
Tomoki Sasou
Hiroyuki Hasegawa
Kei Amagai
Makoto Mizoshiri
Akihiro Maeda
Keisuke Hashimoto
Katsuya Sakayori
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Dainippon Printing Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/34Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3477Six-membered rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

The present invention provides a semiconductor light emitting device that has a high shape forming precision. The semiconductor light emitting device according to the present invention includes a reflection body that contains an isocyanurate compound represented by formula (1), and a pigment. In the formula, R1 is a hydrocarbon group having 4-30 carbon atoms which may contain a hetero atom, and R2 and R3 represent alkenyl groups having 3-6 carbon atoms. R2 and R3 may be identical to each other or may be different from each other.

Description

半導體發光裝置、反射體形成用樹脂組成物及附反射器之引線框架 Semiconductor light-emitting device, resin composition for forming a reflector, and lead frame with reflector

本發明係關於一種半導體發光裝置、反射體形成用樹脂組成物及附反射器之引線框架。 The present invention relates to a semiconductor light-emitting device, a resin composition for forming a reflector, and a lead frame with a reflector.

以往,作為將電子零件安裝於基板等之方法,採用如下方法:於特定之位置預先電附著有焊料之基板上暫時固定電子零件後,藉由紅外線、熱風等手段將該基板進行加熱並使焊料熔融而將電子零件固定(回焊法)。藉由該方法可提昇基板表面之電子零件之安裝密度。 Conventionally, as a method of attaching an electronic component to a substrate or the like, a method of temporarily fixing an electronic component to a substrate on which a solder is electrically attached to a predetermined position is used, and then the substrate is heated by means of infrared rays, hot air, or the like. The electronic parts are fixed by melting (reflow method). By this method, the mounting density of the electronic components on the surface of the substrate can be increased.

又,作為半導體發光裝置之一的LED元件由於小型且壽命長,且省電性優異,故而被廣泛地用作顯示燈等光源。而且,近年來,由於亮度更高之LED元件逐漸可相對經濟地製造而得,故而正研究利用其作為代替螢光燈及白熾燈泡之光源。為了於應用於此種光源之情形時獲得較大照度,而大多使用如下方式:於表面安裝型LED封裝體、即鋁等金屬製之基板(LED安裝用基板)上配置多個LED元件,且於各LED元件之周圍配設使光沿特定方向反射之反射器(反射體)。 Further, the LED element which is one of the semiconductor light-emitting devices is widely used as a light source such as a display lamp because it is small in size, long in life, and excellent in power saving. Further, in recent years, LED elements having higher brightness have been gradually produced relatively economically, and thus it is being studied as a light source for replacing fluorescent lamps and incandescent light bulbs. In order to obtain a large illuminance when applied to such a light source, a plurality of LED elements are disposed on a surface mount type LED package, that is, a substrate made of metal such as aluminum (a substrate for mounting LEDs), and A reflector (reflector) that reflects light in a specific direction is disposed around each of the LED elements.

然而,由於LED元件於發光時伴隨著發熱,故而於此種方式之LED照明裝置中,因LED元件之發光時之溫度上升而導致反射器劣 化,其反射率降低,因而亮度降低,導致LED元件之壽命縮短等。因此,對反射器要求耐熱性。 However, since the LED element is accompanied by heat generation during light emission, in the LED illumination device of this type, the reflector is inferior due to an increase in temperature during illumination of the LED element. The reflectance is lowered, and thus the brightness is lowered, resulting in shortening of the life of the LED element. Therefore, heat resistance is required for the reflector.

為了實現上述耐熱性之要求,於專利文獻1中,提出用於發光二極體之反射器之聚合物組成物,具體而言,揭示有含有聚鄰苯二甲醯胺、碳黑、二氧化鈦、玻璃纖維、及抗氧化劑之聚合物組成物。而且,對該組成物測定熱老化後之反射率,與不含碳黑之聚合物組成物相比,揭示該組成物可獲得良好之反射率,且黃變亦較少。然而,專利文獻1所記載之聚合物組成物之熱老化試驗係於170℃在3小時之短時間內之評價,尚不清楚於更長時間之實用之條件下之耐熱耐久性是否能獲得良好之結果。 In order to achieve the above heat resistance requirement, Patent Document 1 proposes a polymer composition for a reflector of a light-emitting diode, and specifically, discloses polyphthalamide, carbon black, titanium oxide, A polymer composition of glass fibers and an antioxidant. Further, the reflectance after heat aging of the composition was measured, and compared with the polymer composition containing no carbon black, it was revealed that the composition had good reflectance and less yellowing. However, the heat aging test of the polymer composition described in Patent Document 1 is evaluated at 170 ° C for a short period of 3 hours, and it is not clear whether the heat resistance durability under a practical condition for a longer period of time can be obtained well. The result.

又,於專利文獻2中,揭示有用於將光半導體元件與螢光體等波長轉換手段組合而成之光半導體裝置之熱硬化性光反射用樹脂組成物。該專利文獻2所記載之熱硬化性光反射用樹脂組成物之熱老化試驗係於150℃在500小時之更實用之條件下進行驗證,但是成形時間為90秒而較熱塑性樹脂更長,又,後硬化處理必須於150℃進行2小時,因而生產性存在問題。 Further, Patent Document 2 discloses a resin composition for thermosetting light reflection of an optical semiconductor device in which an optical semiconductor element and a wavelength conversion means such as a phosphor are combined. The heat aging test of the thermosetting light-reflecting resin composition described in Patent Document 2 was carried out at 150 ° C under a more practical condition of 500 hours, but the molding time was 90 seconds and was longer than the thermoplastic resin. The post-hardening treatment must be carried out at 150 ° C for 2 hours, so that there is a problem in productivity.

為了解決該等問題,於專利文獻3中,提出有含有聚甲基戊烯及分子量為1000以下之具有烯丙基系取代基之交聯處理劑的電子束硬化性樹脂組成物。於該專利文獻3中,記載有含有白色顏料、進而含有除白色顏料以外之無機粒子之電子束硬化性組成物於回焊步驟中具有優異之耐熱性,於製成反射器等成形體之情形時,可獲得優異耐熱性。於該專利文獻3中,作為具有烯丙基系取代基之交聯處理劑,使用有具有3個烯丙基之異三聚氰酸酯或具有2個烯丙基及環氧基之異三聚氰酸酯。於使用此種交聯處理劑,照射電子束而使樹脂組成物硬化時,必須增大電子束照射量。 又,若電子束照射量變大,則有使所使用之聚甲基戊烯等聚烯烴系樹脂劣化之虞,因此期待電子束照射量儘可能減小。 In order to solve such problems, Patent Document 3 proposes an electron beam curable resin composition containing polymethylpentene and a crosslinking treatment agent having an allyl substituent having a molecular weight of 1,000 or less. In the case of the above-mentioned Patent Document 3, an electron beam curable composition containing a white pigment and further containing inorganic particles other than the white pigment has excellent heat resistance in the reflow step, and is formed into a molded body such as a reflector. When it is excellent, heat resistance can be obtained. In Patent Document 3, as the crosslinking treatment agent having an allyl group substituent, an isomeric isocyanate having 3 allyl groups or a heterotrimer having 2 allyl groups and an epoxy group is used. Polycyanate. When such a crosslinking treatment agent is used and the electron beam is irradiated to cure the resin composition, it is necessary to increase the amount of electron beam irradiation. In addition, when the amount of electron beam irradiation is increased, the polyolefin resin such as polymethylpentene to be used is deteriorated. Therefore, the amount of electron beam irradiation is expected to be as small as possible.

如上所述,於半導體發光裝置中,要求於較高之生產性之基礎上成形精度較高之半導體發光裝置。 As described above, in the semiconductor light-emitting device, it is required to form a semiconductor light-emitting device having high precision on the basis of high productivity.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

專利文獻1:日本特表2006-503160號公報 Patent Document 1: Japanese Patent Publication No. 2006-503160

專利文獻2:日本特開2009-149845號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2009-149845

專利文獻3:日本特開2013-166926號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2013-166926

本發明之目的在於提供一種成形精度較高之半導體發光裝置。 It is an object of the present invention to provide a semiconductor light-emitting device having high forming precision.

本發明者等人藉由使用特定之異三聚氰酸酯化合物,解決了上述課題。即,本發明如下所述: The inventors of the present invention have solved the above problems by using a specific isomeric cyanurate compound. That is, the present invention is as follows:

[1]一種半導體發光裝置,其具有:含有下述通式(1)表示之異三聚氰酸酯(isocyanurate)化合物及顏料之反射體, 式中,R1表示可含有雜原子之碳數4~30之烴基,R2及R3表示碳數3~6之烯基,R2及R3可相同,亦可不同。 [1] A semiconductor light-emitting device comprising: a reflector comprising an isocyanurate compound represented by the following formula (1) and a pigment; In the formula, R 1 represents a hydrocarbon group having 4 to 30 carbon atoms which may contain a hetero atom, and R 2 and R 3 represent an alkenyl group having 3 to 6 carbon atoms, and R 2 and R 3 may be the same or different.

[2]如[1]所記載之半導體發光裝置,其中,上述顏料為白色顏料或黑色顏料。 [2] The semiconductor light-emitting device according to [1], wherein the pigment is a white pigment or a black pigment.

[3]如[1]或[2]所記載之半導體發光裝置,其中,上述反射體含有二氧化矽(silica)。 [3] The semiconductor light-emitting device according to [1], wherein the reflector contains silica.

[4]如[1]至[3]中任一項所記載之半導體發光裝置,其中,上述反射體含有流動性改善劑。 [4] The semiconductor light-emitting device according to any one of [1] to [3] wherein the reflector includes a fluidity improver.

[5]如[1]至[4]中任一項所記載之半導體發光裝置,其中,上述反射體含有聚烯烴樹脂。 [5] The semiconductor light-emitting device according to any one of [1] to [4] wherein the reflector contains a polyolefin resin.

[6]如[1]至[5]中任一項所記載之半導體發光裝置,其中,上述反射體由游離放射線之硬化物所構成。 [6] The semiconductor light-emitting device according to any one of [1] to [5] wherein the reflector is made of a cured product of free radiation.

[7]一種反射體形成用樹脂組成物,其形成[1]至[6]中任一項所記載之半導體發光裝置所具備之反射體。 [7] A resin composition for forming a reflector, comprising the reflector provided in the semiconductor light-emitting device according to any one of [1] to [6].

[8]一種附反射器之引線框架,其係由[7]所記載之反射體形成用樹脂組成物之硬化物所構成。 [8] A lead frame with a reflector comprising the cured product of the resin composition for forming a reflector according to [7].

根據本發明,可提供一種成形精度較高之半導體發光裝置。 According to the present invention, a semiconductor light-emitting device having high forming precision can be provided.

10‧‧‧光半導體元件 10‧‧‧Optical semiconductor components

12‧‧‧反射器 12‧‧‧ reflector

14‧‧‧基板 14‧‧‧Substrate

16‧‧‧引線 16‧‧‧ lead

18‧‧‧透鏡 18‧‧‧ lens

圖1係表示本發明之實施形態之半導體發光裝置之一例之概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing an example of a semiconductor light-emitting device according to an embodiment of the present invention.

圖2係表示本發明之實施形態之半導體發光裝置之一例之概略剖面圖。 Fig. 2 is a schematic cross-sectional view showing an example of a semiconductor light-emitting device according to an embodiment of the present invention.

[半導體發光裝置] [Semiconductor Light Emitting Device

關於本發明之實施形態之半導體發光裝置,使用圖式進行說明。再者,於本說明書中,被視為較佳之規定可任意地採用,較佳者彼此之組合可謂更佳。 A semiconductor light-emitting device according to an embodiment of the present invention will be described with reference to the drawings. Furthermore, in the present specification, the provisions regarded as being preferable can be arbitrarily employed, and it is preferable that the combination of the preferred ones is preferable.

本實施形態之半導體發光裝置具有:含有下述通式(1)表示之異三聚氰酸酯化合物及顏料之反射體(以下,稱為反射器)。 The semiconductor light-emitting device of the present embodiment has a reflector containing a different isocyanurate compound represented by the following formula (1) and a pigment (hereinafter referred to as a reflector).

式中,R1表示可含有雜原子之碳數4~30之烴基,R2及R3表示碳數3~6之烯基,R2及R3可相同,亦可不同。 In the formula, R 1 represents a hetero atom may contain carbon atoms of the hydrocarbon group having 4 to 30, R 2 and R 3 represents an alkenyl group having a carbon number of 3-6, R 2 and R 3 may be the same or different.

如圖1所示,本實施形態之半導體發光裝置係於基板14上具有光半導體元件10、及設置於該光半導體元件10之周圍且具有使來自光半導體元件10之光沿特定方向反射之光反射面的反射器12而成。光半導體元件10較佳為LED元件或LED封裝體。於半導體發光裝置中,反射器12之光反射面之至少一部分(於圖1之情形時為全部)係以由下述反射體形成用樹脂組成物所構成之成形體構成。 As shown in FIG. 1, the semiconductor light-emitting device of the present embodiment has an optical semiconductor element 10 on a substrate 14, and light disposed around the optical semiconductor element 10 and having light reflected from the optical semiconductor element 10 reflected in a specific direction. The reflector 12 of the reflecting surface is formed. The optical semiconductor component 10 is preferably an LED component or an LED package. In the semiconductor light-emitting device, at least a part of the light-reflecting surface of the reflector 12 (in the case of FIG. 1) is formed of a molded body composed of the following resin composition for forming a reflector.

光半導體元件10係由n型及p型之包覆層夾著射出放射光(一般而言,於白光LED中為UV或藍光)之例如由AlGaAs、AlGaInP、 GaP或GaN所構成之活性層且具有雙異質結構的半導體晶片(發光體),例如呈一邊之長度為0.5mm左右之六面體形狀。而且,於打線接合安裝之形態之情形時,經由引線16連接於未圖示之電極(連接端子)。 The optical semiconductor element 10 is composed of an n-type and p-type cladding layer, and emits emitted light (generally, UV or blue light in a white LED), for example, AlGaAs, AlGaInP, A semiconductor wafer (light-emitting body) having an active layer composed of GaP or GaN and having a double heterostructure has, for example, a hexahedral shape having a length of about 0.5 mm on one side. Further, in the case of the wire bonding type, it is connected to an electrode (connection terminal) (not shown) via the lead wire 16.

反射器12之形狀係基於透鏡18之端部(接合部)之形狀,通常為方形、圓形、楕圓形等筒狀或環狀。於圖1之概略剖面圖中,反射器12為筒狀體(環狀體),反射器12之全部端面接觸、固定於基板14之表面。 The shape of the reflector 12 is based on the shape of the end portion (joining portion) of the lens 18, and is generally a cylindrical shape or a ring shape such as a square shape, a circular shape, or a circular shape. In the schematic cross-sectional view of FIG. 1, the reflector 12 is a cylindrical body (annular body), and all end faces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.

再者,為了提高來自光半導體元件10之光之指向性,反射器12之內面亦可呈錐狀向上方擴大(參照圖1)。 Further, in order to improve the directivity of the light from the optical semiconductor element 10, the inner surface of the reflector 12 may be expanded upward in a tapered shape (see Fig. 1).

又,關於反射器12,於將透鏡18側之端部加工為與該透鏡18之形狀相應之形態之情形時,亦可使反射器12作為透鏡座發揮功能。 Further, in the case where the end portion of the reflector 12 is processed in a shape corresponding to the shape of the lens 18, the reflector 12 may function as a lens holder.

如圖2所示,亦可僅將反射器12之光反射面側作為由反射體形成用樹脂組成物所構成之光反射層12b而形成。於該情形時,就降低熱阻等觀點而言,光反射層12b之厚度較佳為設為500μm以下,更佳為設為300μm以下。形成光反射層12b之構件12a可由公知之耐熱性樹脂構成。 As shown in Fig. 2, only the light reflecting surface side of the reflector 12 may be formed as the light reflecting layer 12b composed of the resin composition for forming a reflector. In this case, the thickness of the light-reflecting layer 12b is preferably 500 μm or less, and more preferably 300 μm or less from the viewpoint of reducing thermal resistance and the like. The member 12a forming the light reflection layer 12b may be composed of a known heat resistant resin.

如上所述,於反射器12上設置有透鏡18。透鏡18為樹脂製,亦有根據目的、用途等採用各種結構,並著色之情況。 As described above, the lens 18 is provided on the reflector 12. The lens 18 is made of a resin, and may have various structures depending on the purpose, use, and the like, and may be colored.

由基板14、反射器12及透鏡18所形成之空間部可為透明密封部,亦可視需要為空隙部。該空間部通常為填充有賦予透光性及絕緣性之材料等之透明密封部,於打線接合安裝中,可防止由如下原因產生之電性不良情況:因與引線16直接接觸而施加之力、及間接地施加之振動、衝擊等而使引線16自與光半導體元件10之連接部、及/或與電極之連接部 偏離、或切斷、或短路。又,同時可保護光半導體元件10使之遠離濕氣、塵埃等,長期維持可靠性。 The space formed by the substrate 14, the reflector 12, and the lens 18 may be a transparent sealing portion, and may be a void portion as needed. The space portion is usually a transparent sealing portion filled with a material that imparts light transmissivity and insulation, and is prevented from being electrically defective due to the following causes during wire bonding: a force applied by direct contact with the lead wire 16 And indirectly applying a vibration, an impact, or the like to connect the lead 16 to the connection portion with the optical semiconductor element 10, and/or the connection portion with the electrode Deviate, or cut off, or short circuit. Further, the optical semiconductor element 10 can be protected from moisture, dust, and the like at the same time, and reliability can be maintained for a long period of time.

作為該賦予透光性及絕緣性之材料(透明密封劑組成物),通常可列舉:聚矽氧樹脂、環氧聚矽氧樹脂、環氧系樹脂、丙烯酸系樹脂、聚醯亞胺系樹脂、聚碳酸酯樹脂等。該等之中,就耐熱性、耐候性、低收縮性及耐變色性之觀點而言,較佳為聚矽氧樹脂。 Examples of the material (transparent sealant composition) that imparts light transmittance and insulation properties include polyoxynoxy resin, epoxy polyoxyn resin, epoxy resin, acrylic resin, and polyimide resin. , polycarbonate resin, etc. Among these, from the viewpoint of heat resistance, weather resistance, low shrinkage, and discoloration resistance, a polyoxyxylene resin is preferable.

以下,對圖1所示之半導體發光裝置之製造方法之一例進行說明。 Hereinafter, an example of a method of manufacturing the semiconductor light-emitting device shown in FIG. 1 will be described.

首先,將下述反射體形成用樹脂組成物藉由使用具備特定形狀之空腔空間之模具之轉移成形、壓縮成形、射出成形等成形為特定形狀之反射器12。其後,利用接著劑或接合構件將另外準備之光半導體元件10及電極固定於基板14,利用引線16將LED元件與電極連接。繼而,於由基板14及反射器12所形成之凹部,注入含有聚矽氧樹脂等之透明密封劑組成物,藉由加熱、乾燥等使之硬化而製成透明密封部。其後,於透明密封部上配設透鏡18,而獲得圖1所示之半導體發光裝置。 First, the following resin composition for forming a reflector is formed into a reflector 12 having a specific shape by transfer molding, compression molding, injection molding, or the like using a mold having a cavity space having a specific shape. Thereafter, the separately prepared optical semiconductor element 10 and the electrode are fixed to the substrate 14 by an adhesive or a bonding member, and the LED element is connected to the electrode by the lead 16. Then, a transparent sealant composition containing a polyoxymethylene resin or the like is injected into the concave portion formed by the substrate 14 and the reflector 12, and is cured by heating, drying, or the like to form a transparent sealing portion. Thereafter, the lens 18 is disposed on the transparent sealing portion to obtain the semiconductor light-emitting device shown in FIG.

再者,亦可於透明密封劑組成物未硬化之狀態下載置透鏡18後,使組成物硬化。 Further, the lens 18 may be removed after the transparent sealant composition is not cured, and the composition may be cured.

由下述反射體形成用樹脂組成物所獲得之成形體於照射游離放射線而使之硬化時,可減少游離放射線照射量,因此可獲得因游離放射線造成之劣化較少之反射器、或附反射器之引線框架。 When the molded article obtained by the following resin composition for forming a reflector is cured by irradiation with free radiation, the amount of free radiation irradiation can be reduced, so that a reflector having less deterioration due to free radiation or a reflection can be obtained. Lead frame of the device.

[反射體形成用樹脂組成物] [Resin composition for forming a reflector]

繼而,對用於形成本實施形態之半導體發光裝置所使用之反射體之樹 脂組成物(稱為反射體形成用樹脂組成物)進行說明。 Then, the tree for forming the reflector used in the semiconductor light-emitting device of the present embodiment The lipid composition (referred to as a resin composition for forming a reflector) will be described.

反射體形成用樹脂組成物含有異三聚氰酸酯化合物、及顏料。又,反射體形成用樹脂組成物含有熱塑性樹脂。 The resin composition for forming a reflector contains an isocyanurate compound and a pigment. Further, the resin composition for forming a reflector contains a thermoplastic resin.

<異三聚氰酸酯化合物> <isomeric cyanurate compound>

反射體形成用樹脂組成物所使用之異三聚氰酸酯化合物係下述通式(1)表示之化合物。 The iso-c-cyanate compound used for the resin composition for forming a reflector is a compound represented by the following formula (1).

式中,R1表示可含有雜原子之碳數4~30之烴基,R2及R3表示碳數3~6之烯基,R2及R3可相同,亦可不同。 In the formula, R 1 represents a hetero atom may contain carbon atoms of the hydrocarbon group having 4 to 30, R 2 and R 3 represents an alkenyl group having a carbon number of 3-6, R 2 and R 3 may be the same or different.

R1係可含有雜原子之碳數4~30之烴基。於烴基中,較佳為不具有烯烴性不飽和鍵之烴基。作為該等烴基,例如可列舉:烷基、環烷基、芳基、芳烷基等。作為烷基,例如可列舉:己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基等直鏈狀之烷基或支鏈狀之烷基。作為環烷基,例如可列舉:環己基、環庚基、環辛基、環壬基、環癸基、環十一烷基、環十二烷基等。作為芳基,可列舉:苯基、萘基、蒽基等。作為芳烷基,可列舉:苄基、苯乙基、三苯甲基、萘基甲基、蒽基甲基等。於該等烴基中,如上所述,亦可含有雜原子,作為雜原子,可列舉:氧原子、氮原子、硫原子等雜原子。上述R1較佳為烷基,尤佳為碳數6~20之烷基。 R 1 may contain a hydrocarbon group having 4 to 30 carbon atoms of a hetero atom. Among the hydrocarbon groups, a hydrocarbon group having no olefinic unsaturated bond is preferred. Examples of the hydrocarbon group include an alkyl group, a cycloalkyl group, an aryl group, and an aralkyl group. As the alkyl group, for example, hexyl, heptyl, octyl, decyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecane may be mentioned. a linear alkyl or branched alkyl group such as a heptadecyl group, a heptadecyl group, an octadecyl group, a nonadecyl group or an eicosyl group. Examples of the cycloalkyl group include a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecyl group, a cyclodecyl group, a cycloundecyl group, a cyclododecyl group, and the like. Examples of the aryl group include a phenyl group, a naphthyl group, an anthracenyl group and the like. Examples of the aralkyl group include a benzyl group, a phenethyl group, a trityl group, a naphthylmethyl group, and a decylmethyl group. The hydrocarbon group may contain a hetero atom as described above, and examples of the hetero atom include a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom. The above R 1 is preferably an alkyl group, and more preferably an alkyl group having 6 to 20 carbon atoms.

R2及R3表示碳數3~6之烯基,可列舉:丙烯基、丁烯基、戊烯基、己烯基之烯基。該等烯基中之碳-碳雙鍵之位置可為末端位置,亦可為內部位置。R2及R3可相同,亦可不同。作為R2及R3,尤佳為丙烯基,丙烯基之中較佳為烯丙基。而且,較佳為R2及R3均為烯丙基。 R 2 and R 3 each represent an alkenyl group having 3 to 6 carbon atoms, and examples thereof include an alkenyl group of a propenyl group, a butenyl group, a pentenyl group, and a hexenyl group. The position of the carbon-carbon double bond in the alkenyl group may be the terminal position or the internal position. R 2 and R 3 may be the same or different. R 2 and R 3 are particularly preferably an allyl group, and among them, an allyl group is preferred. Further, it is preferred that both R 2 and R 3 are allyl groups.

作為上述通式(1)表示之異三聚氰酸酯化合物,例如,若例示R2及R3均為烯丙基之情形時之具體之化合物,則可列舉:異三聚氰酸5-壬酯-1,3-二烯丙酯、異三聚氰酸5-癸酯-1,3-二烯丙酯、異三聚氰酸5-十二烷基酯-1,3-二烯丙酯、異三聚氰酸5-十三烷基酯-1,3-二烯丙酯、異三聚氰酸5-十四烷基酯-1,3-二烯丙酯、異三聚氰酸5-環己酯-1,3-二烯丙酯、異三聚氰酸5-苯酯-1,3-二烯丙酯、異三聚氰酸5-苄酯-1,3-二烯丙酯等。 As the specific isocyanurate compound represented by the above formula (1), for example, a specific compound in the case where both R 2 and R 3 are allyl groups is exemplified by isomeric cyanuric acid 5- Decyl ester-1,3-diallyl ester, 5-nonyl isocyanate-1,3-diallyl ester, 5-pentadecyl isocyanate-1,3-diene Propyl ester, 5-tridecyl-1,3-diallyl isocyanate, 5-tetradecyl-1,3-diallyl isomeric cyanide, heterotrimerization 5-cyclohexyl-1,3-diallyl cyanate, 5-phenyl ester-1,3-diallyl isocyanate, 5-benzyl isopropyl cyanide-1,3- Diallyl ester and the like.

本發明之反射體形成用樹脂組成物藉由使用通式(1)表示之異三聚氰酸酯系化合物,可改善樹脂組成物之成形性及硬化處理。於使樹脂組成物成形後之硬化處理時,通常照射游離放射線進行硬化處理,但是藉由使用通式(1)表示之異三聚氰酸酯系化合物,可減少游離放射線之照射量。因此,可減少所使用之熱塑性樹脂或顏料等之劣化。又,關於通式(1)表示之異三聚氰酸酯系化合物,由於R1具有相對較大之分子量,故而於使用聚烯烴樹脂作為熱塑性樹脂時,與聚烯烴樹脂之相溶性提高,樹脂組成物之流動性變高,於進行射出成形等而製成成形體時,可減少成形模具內之未填充部位,可成形性較佳地獲得成形體。尤其是以成形體之方式獲得反射器之情形時,藉由進行1次射出成形,可成形性較佳地獲得多個較小之反射器。 In the resin composition for forming a reflector of the present invention, the formability and hardening treatment of the resin composition can be improved by using the isocyanurate compound represented by the formula (1). In the hardening treatment after the resin composition is molded, the radiation is usually irradiated with free radiation, but by using the isocyanurate compound represented by the general formula (1), the amount of irradiation of the free radiation can be reduced. Therefore, deterioration of the thermoplastic resin, pigment, or the like used can be reduced. And, general formula (1) represents the iso cyanurate-based compounds, R 1 has the relatively large because of the molecular weight, and therefore when used in a polyolefin resin as the thermoplastic resin, compatibility with the polyolefin resin to improve the resin When the fluidity of the composition is increased, when the molded article is formed by injection molding or the like, the unfilled portion in the molding die can be reduced, and the molded article can be obtained with good moldability. In particular, when a reflector is obtained in the form of a molded body, a plurality of smaller reflectors are preferably formed by one injection molding.

<顏料> <pigment>

本實施形態之反射體形成用樹脂組成物含有顏料。作為顏料,可較佳地使用白色顏料或黑色顏料。 The resin composition for forming a reflector of the present embodiment contains a pigment. As the pigment, a white pigment or a black pigment can be preferably used.

作為白色顏料,可將氧化鈦、氧化鋁、滑石、氫氧化鋁、雲母、碳酸鈣、硫化鋅、氧化鋅、硫酸鋇、鈦酸鉀等單獨使用或者混合使用。白色顏料係用以對使本發明之樹脂組成物硬化而獲得之硬化物賦予白色系之色調者,尤其是藉由將其色調設為高度之白色,可提昇硬化物之光線反射率。使本發明之樹脂組成物硬化而獲得之硬化物之光線反射率得以提昇者可用作反射器。尤其是於將硬化物用作反射器之情形時,由於要求良好之光線反射率,故而作為白色顏料,較佳為使用容易取得且光線反射率亦優異之氧化鈦。就考慮成形性,且獲得較高之反射率之觀點而言,白色顏料之平均粒徑於一次粒度分佈中較佳為0.1~100μm,更佳為0.1~10μm,進而較佳為0.2~1μm。平均粒徑能以利用雷射繞射法進行之粒度分佈測定中之質量平均值D50之形式求出。 As the white pigment, titanium oxide, aluminum oxide, talc, aluminum hydroxide, mica, calcium carbonate, zinc sulfide, zinc oxide, barium sulfate, potassium titanate or the like can be used alone or in combination. The white pigment is used to impart a white color tone to a cured product obtained by curing the resin composition of the present invention, and in particular, by setting the color tone to a white color, the light reflectance of the cured product can be improved. The light reflectance of the cured product obtained by hardening the resin composition of the present invention can be used as a reflector. In particular, when a cured product is used as a reflector, since a good light reflectance is required, it is preferable to use titanium oxide which is easy to obtain and excellent in light reflectance as a white pigment. The average particle diameter of the white pigment in the primary particle size distribution is preferably from 0.1 to 100 μm, more preferably from 0.1 to 10 μm, still more preferably from 0.2 to 1 μm, from the viewpoint of obtaining formability and obtaining a high reflectance. The average particle diameter can be obtained in the form of a mass average value D50 in particle size distribution measurement by a laser diffraction method.

又,所謂黑色顏料係至少於可見光線區域(400~700nm)中,光線反射率顯示未達1%之粉末者,且用於對使本發明之樹脂組成物硬化而獲得之硬化物賦予黑色系之色調,可降低硬化物之光線反射率。此種降低光線反射率之硬化物亦可用作特定用途之LED之反射器。作為黑色顏料,可較佳地使用碳黑或石墨。 Further, the black pigment is at least in the visible light region (400 to 700 nm), and the light reflectance indicates that the powder is less than 1%, and is used to impart a black color to the cured product obtained by curing the resin composition of the present invention. The color tone reduces the light reflectance of the cured product. Such a cured material that reduces light reflectance can also be used as a reflector for LEDs for specific purposes. As the black pigment, carbon black or graphite can be preferably used.

<熱塑性樹脂> <thermoplastic resin>

反射體形成用樹脂組成物亦可含有熱塑性樹脂。 The resin composition for forming a reflector may also contain a thermoplastic resin.

作為熱塑性樹脂,只要為不於成形溫度下發生分解,而耐化學品性及電絕緣性優異者即可,可列舉:丙烯酸樹脂、聚乙烯醇縮丁醛等聚乙烯醇 縮醛(丁醛樹脂)、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯等聚酯樹脂;氯乙烯樹脂、胺酯樹脂(urethane resin)、聚烯烴樹脂、聚苯乙烯、α-甲基苯乙烯等苯乙烯系樹脂;聚醯胺、聚碳酸酯、聚甲醛等縮醛樹脂;乙烯-四氟乙烯共聚物等氟樹脂;聚醯亞胺、聚乳酸、聚乙烯醇縮乙醛樹脂、液晶性聚酯樹脂等,可單獨使用1種或將2種以上組合使用。於將2種以上組合之情形時,可為構成該等樹脂之單體之共聚物,亦可將各種樹脂混合而使用。 The thermoplastic resin may be excellent in chemical resistance and electrical insulating properties without decomposition at a molding temperature, and examples thereof include polyvinyl alcohol such as acrylic resin and polyvinyl butyral. Polyester resin such as acetal (butyraldehyde resin), polyethylene terephthalate or polybutylene terephthalate; vinyl chloride resin, urethane resin, polyolefin resin, polystyrene, Styrene resin such as α-methylstyrene; acetal resin such as polyamine, polycarbonate, polyoxymethylene; fluororesin such as ethylene-tetrafluoroethylene copolymer; polyimine, polylactic acid, polyvinyl alcohol The acetaldehyde resin, the liquid crystalline polyester resin, and the like may be used alone or in combination of two or more. When two or more types are combined, a copolymer constituting the monomers of the resins may be used, and various resins may be used in combination.

自該等之中,可鑒於作為成形品之反射器之尺寸、基於反射器之微細構造等之流動性等進行選擇。其中,就耐光性優異之方面而言,較佳為使用聚烯烴樹脂。 Among these, it is possible to select the size of the reflector as a molded article, the fluidity based on the fine structure of the reflector, and the like. Among them, a polyolefin resin is preferably used in terms of excellent light resistance.

(聚烯烴樹脂) (polyolefin resin)

於本發明之實施形態中,用於反射體形成用樹脂組成物之聚烯烴樹脂係指主鏈由碳-碳鍵構成之結構單元之聚合物,亦存在碳鍵包含環狀結構之情形。可為均聚物,亦可為與其他單體共聚合而成之共聚物。碳-碳鍵由於不發生水解反應,故而耐水性優異。作為烯烴樹脂,例如可列舉:使降莰烯衍生物開環複分解聚合而得之樹脂或其氫化物、乙烯、丙烯等烯烴之各均聚物、或乙烯-丙烯之嵌段共聚物、無規共聚物、或乙烯及/或丙烯與丁烯、戊烯、己烯等其他烯烴之共聚物、以及乙烯及/或丙烯與乙酸乙烯酯等其他單體之共聚物等。其中,較佳為聚乙烯、聚丙烯、聚甲基戊烯,就具有於熔點高至230~240℃、成形溫度為280℃左右時亦不發生分解,且耐化學品性及電絕緣性優異之特性之方面而言,更佳為反射率變化較少且著色性較小之聚甲基戊烯。 In the embodiment of the present invention, the polyolefin resin used for the resin composition for forming a reflector is a polymer having a structural unit composed of a carbon-carbon bond in the main chain, and a case where the carbon bond contains a cyclic structure. It may be a homopolymer or a copolymer copolymerized with other monomers. Since the carbon-carbon bond does not undergo a hydrolysis reaction, it is excellent in water resistance. Examples of the olefin resin include a resin obtained by ring-opening metathesis polymerization of a norbornene derivative, a hydrogenated product thereof, a homopolymer of an olefin such as ethylene or propylene, or a block copolymer of ethylene-propylene, or a random A copolymer, or a copolymer of ethylene and/or propylene with other olefins such as butene, pentene or hexene, and a copolymer of ethylene and/or other monomers such as propylene and vinyl acetate. Among them, polyethylene, polypropylene, and polymethylpentene are preferred, and have a melting point of up to 230 to 240 ° C, a molding temperature of about 280 ° C, and no decomposition, and excellent chemical resistance and electrical insulation. In terms of characteristics, polymethylpentene having less change in reflectance and less coloration is more preferable.

所謂聚乙烯可為乙烯之均聚物,亦可為乙烯及可與乙烯共聚合之其他共聚單體(例如,丙烯、1-丁烯、1-己烯、1-辛烯等α-烯烴、乙酸乙烯酯、乙烯醇等)之共聚物。作為聚乙烯樹脂,例如可列舉:高密度聚乙烯(HDPE)、中密度聚乙烯(MDPE)、低密度聚乙烯(LDPE)、直鏈低密度聚乙烯(LLDPE)、超低密度聚乙烯(VLDPE)、超高分子量聚乙烯(UHMWPE)、交聯聚乙烯(PEX)等。該等聚乙烯可單獨使用1種,亦可將2種以上併用。 The polyethylene may be a homopolymer of ethylene, and may also be ethylene and other comonomers copolymerizable with ethylene (for example, α-olefins such as propylene, 1-butene, 1-hexene, 1-octene, etc. a copolymer of vinyl acetate, vinyl alcohol, etc.). Examples of the polyethylene resin include high density polyethylene (HDPE), medium density polyethylene (MDPE), low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and ultra low density polyethylene (VLDPE). ), ultra high molecular weight polyethylene (UHMWPE), crosslinked polyethylene (PEX), and the like. These polyethylenes may be used alone or in combination of two or more.

所謂聚丙烯可為丙烯之均聚物,亦可為丙烯及可與丙烯共聚合之其他共聚單體(例如,乙烯、1-丁烯、1-己烯、1-辛烯等α-烯烴、乙酸乙烯酯、乙烯醇等)之共聚物。該等聚丙烯可單獨使用1種,亦可將2種以上併用。 The polypropylene may be a homopolymer of propylene, and may also be propylene and other comonomers copolymerizable with propylene (for example, α-olefins such as ethylene, 1-butene, 1-hexene, 1-octene, etc., a copolymer of vinyl acetate, vinyl alcohol, etc.). These polypropylenes may be used alone or in combination of two or more.

作為聚甲基戊烯樹脂,較佳為4-甲基戊烯-1之均聚物,亦可為4-甲基戊烯-1與其他α-烯烴例如乙烯、丙烯、1-丁烯、1-戊烯、1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十八烯、1-二十烯、3-甲基-1-丁烯、3-甲基-1-戊烯等碳數2至20之α-烯烴之共聚物,亦可為以4-甲基-1-戊烯為主體之共聚物。於為該共聚物之情形時,就耐熱性之觀點而言,較佳為碳數10~18之烯烴(alkene)經共聚合而成者,更佳為碳數16以上之烯烴(alkene)經共聚合而成者。 As the polymethylpentene resin, a homopolymer of 4-methylpentene-1 is preferred, and 4-methylpentene-1 and other α-olefins such as ethylene, propylene, and 1-butene may also be used. 1-pentene, 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-octadecene, 1-eicosene, 3-methyl-1 a copolymer of a 2 to 20 carbon atoms such as butene or 3-methyl-1-pentene, or a copolymer mainly composed of 4-methyl-1-pentene. In the case of the copolymer, from the viewpoint of heat resistance, it is preferred that the alkene having a carbon number of 10 to 18 is copolymerized, more preferably an alkene having a carbon number of 16 or more. Co-aggregation.

藉由將用於反射體形成用樹脂組成物之聚烯烴樹脂之折射率設為1.40~1.60,尤其是於將使用白色顏料作為顏料且使樹脂組成物成形而獲得之成形體作為反射器之情形時,可提昇光線反射率。又,聚烯烴樹脂之重量平均分子量較佳為220,000~800,000。若重量平均分子量為220,000 以上,則使樹脂組成物成形而獲得之成形體難以發生龜裂,故而較佳。例如,若於半導體發光裝置中發生龜裂,則水分會浸入而使半導體發光元件發生故障,因而製品壽命極度縮短。又,若重量平均分子量為800,000以下,則容易使樹脂組成物成形,故而較佳。聚烯烴樹脂之重量平均分子量之下限值較佳為230,000以上,更佳為240,000以上。又,重量平均分子量之上限值較佳為700,000以下,更佳為650,000以下。再者,重量平均分子量較佳為藉由凝膠滲透層析法(GPC)測得之聚苯乙烯換算之重量平均分子量,但只要為可再現性良好地測定重量測定平均分子量之方法,則並不限定於此。例如,可藉由例示利用適當之溶劑進行萃取而得之材料之方法,對重量平均分子量進行測定。 By setting the refractive index of the polyolefin resin used for the resin composition for forming a reflector to 1.40 to 1.60, in particular, a molded body obtained by molding a resin composition using a white pigment as a pigment is used as a reflector. Increases light reflectivity. Further, the weight average molecular weight of the polyolefin resin is preferably from 220,000 to 800,000. If the weight average molecular weight is 220,000 As described above, the molded body obtained by molding the resin composition is less likely to be cracked, which is preferable. For example, when cracks occur in the semiconductor light-emitting device, moisture is immersed and the semiconductor light-emitting device is broken, so that the life of the product is extremely shortened. Moreover, when the weight average molecular weight is 800,000 or less, it is easy to form a resin composition, which is preferable. The lower limit of the weight average molecular weight of the polyolefin resin is preferably 230,000 or more, and more preferably 240,000 or more. Further, the upper limit of the weight average molecular weight is preferably 700,000 or less, more preferably 650,000 or less. Further, the weight average molecular weight is preferably a polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC), but a method for measuring the average molecular weight by weight for good reproducibility is used. It is not limited to this. For example, the weight average molecular weight can be measured by a method exemplifying a material obtained by extraction with a suitable solvent.

作為基於GPC之重量平均分子量測定條件之例,可例示以下條件。 As an example of the GPC-based weight average molecular weight measurement conditions, the following conditions can be exemplified.

溶析液:鄰二氯苯 Lysate: o-dichlorobenzene

溫度:140~160℃ Temperature: 140~160°C

流速:1.0mL/min Flow rate: 1.0mL/min

試樣濃度:1.0/L Sample concentration: 1.0/L

注入量:300μL Injection volume: 300μL

<各成分之摻合比例> < blending ratio of each component>

關於本實施形態之反射體形成用樹脂組成物,於使用聚烯烴樹脂作為熱塑性樹脂之情形時,反射體形成用樹脂組成物中之異三聚氰酸酯化合物之摻合量相對於聚烯烴樹脂100質量份,通常為1~100質量份,較佳為8~60質量份,更佳為10~50質量份。藉由將異三聚氰酸酯化合物之含量設 為上述範圍內,可同時實現反射體形成用樹脂組成物之成形性、及使反射體形成用樹脂組成物硬化而得之硬化物之耐熱性。 In the case where a polyolefin resin is used as the thermoplastic resin in the resin composition for forming a reflector of the present embodiment, the blending amount of the isocyanurate compound in the resin composition for forming a reflector is relative to the polyolefin resin. 100 parts by mass, usually 1 to 100 parts by mass, preferably 8 to 60 parts by mass, more preferably 10 to 50 parts by mass. By setting the content of the isomeric cyanurate compound In the above range, the moldability of the resin composition for forming a reflector and the heat resistance of the cured product obtained by curing the resin composition for forming a reflector can be simultaneously achieved.

又,於使用聚烯烴樹脂作為熱塑性樹脂之情形時,於反射體形成用樹脂組成物中,顏料之摻合量相對於聚烯烴樹脂100質量份,通常為10~1000質量份,較佳為50~800質量份,更佳為100~600質量份。藉由將顏料之含量設為上述範圍內,於由樹脂組成物所獲得之硬化物中,可充分地發揮顏料之效果,並且可於使樹脂組成物成形時確保成形性。 In the case of using a polyolefin resin as the thermoplastic resin, the blending amount of the pigment in the resin composition for forming a reflector is usually 10 to 1000 parts by mass, preferably 50%, based on 100 parts by mass of the polyolefin resin. ~800 parts by mass, more preferably 100 to 600 parts by mass. When the content of the pigment is within the above range, the effect of the pigment can be sufficiently exhibited in the cured product obtained from the resin composition, and the moldability can be ensured when the resin composition is molded.

<除顏料以外之無機填料> <Inorganic filler other than pigment>

於本發明之樹脂組成物中,進而可含有除顏料以外之無機填料(以下,亦有時稱為無機填料)。藉由含有無機填料,可提昇使本發明之樹脂組成物硬化而獲得之硬化物之強度。作為此種無機填料,可使用纖維狀無機填料、板狀或粒子狀等其他無機填料。 Further, the resin composition of the present invention may further contain an inorganic filler other than the pigment (hereinafter sometimes referred to as an inorganic filler). By containing an inorganic filler, the strength of the cured product obtained by hardening the resin composition of the present invention can be enhanced. As such an inorganic filler, other inorganic fillers such as a fibrous inorganic filler, a plate shape or a particulate form can be used.

(纖維狀無機填料) (fibrous inorganic filler)

作為纖維狀無機填料,可列舉:玻璃纖維、石棉纖維、碳纖維、石墨纖維、金屬纖維、硼酸鋁晶鬚、鎂系晶鬚、矽系晶鬚、矽灰石、絲狀鋁英石、海泡石、礦渣纖維、硬矽鈣石、石膏纖維、二氧化矽纖維(silica fiber)、二氧化矽-氧化鋁纖維、氧化鋯纖維、氮化硼纖維、氮化矽纖維及硼纖維等。 Examples of the fibrous inorganic filler include glass fiber, asbestos fiber, carbon fiber, graphite fiber, metal fiber, aluminum borate whisker, magnesium whisker, lanthanum whisker, ash stone, filamentous aragonite, and sea blisters. Stone, slag fiber, hard calcareous stone, gypsum fiber, silica fiber, cerium oxide-alumina fiber, zirconia fiber, boron nitride fiber, cerium nitride fiber and boron fiber.

(其他無機填料) (Other inorganic fillers)

作為其他無機填料,可列舉:二氧化矽粒子、層狀矽酸鹽、經有機鎓離子交換而成之層狀矽酸鹽、玻璃薄片、非膨潤性雲母、石墨、金屬箔、陶瓷顆粒、黏土、雲母、絹雲母、沸石、膨潤土、白雲石、高嶺土、矽酸粉末、長石粉、白砂球(shirasu balloon)、石膏、均密石英質岩、碳鈉鋁石 及白土富勒烯等碳奈米粒子等板狀或粒子狀之無機填料。 Examples of the other inorganic fillers include cerium oxide particles, layered ceric acid salts, layered ceric acid salts exchanged with organic cerium ions, glass flakes, non-swelling mica, graphite, metal foil, ceramic granules, and clay. , mica, sericite, zeolite, bentonite, dolomite, kaolin, citric acid powder, feldspar powder, shirasu balloon, gypsum, uniform quartzite, dawsonite A plate-like or particulate inorganic filler such as carbon nanoparticle such as white clay fullerene.

關於用作反射體之反射體形成用樹脂組成物,就於用作半導體發光裝置時之機械強度或溫度下之形狀穩定性優異之觀點而言,較佳為使用玻璃纖維,尤佳為使用含有二氧化矽(silicon dioxide)60質量%以上之玻璃纖維。玻璃纖維中之二氧化矽之比例更佳為65質量%以上,進而較佳為70質量%以上。 The resin composition for forming a reflector for use as a reflector is preferably a glass fiber from the viewpoint of excellent mechanical strength at a mechanical strength or temperature when used as a semiconductor light-emitting device, and more preferably used. Glass fiber having 60% by mass or more of silicon dioxide. The proportion of cerium oxide in the glass fiber is more preferably 65 mass% or more, further preferably 70 mass% or more.

纖維狀填料之剖面形狀可為一般之大致圓形狀,亦可為扁平形狀等異形剖面。進而亦可不為剖面形狀、剖面積固定之纖維。該情形時之剖面積規定為將長度方向上不同之剖面積平均而獲得之剖面積。作為一例,於纖維狀填料為玻璃纖維之情形時,作為剖面之尺寸,較佳為滿足上述剖面積之規定,且剖面之短徑D1為0.5μm以上且25μm以下,長徑D2為0.5μm以上且300μm以下,D2相對於D1之比即D2/D1為1.0以上且30以下。又,玻璃纖維之平均纖維長度較佳為0.75μm以上且300μm以下。此種玻璃纖維亦被稱為磨碎纖維,可將長纖維進行粉碎而獲得。上述除顏料以外之無機填料相對於聚烯烴樹脂100質量份通常可於10~500質量份之範圍內使用。 The cross-sectional shape of the fibrous filler may be a generally circular shape or a profiled shape such as a flat shape. Further, it may be a fiber which is not fixed in cross-sectional shape or cross-sectional area. In this case, the sectional area is defined as the sectional area obtained by averaging the cross-sectional areas different in the longitudinal direction. In the case where the fibrous filler is glass fiber, it is preferable that the cross-sectional area is satisfied as the cross-sectional area, and the short diameter D1 of the cross-section is 0.5 μm or more and 25 μm or less, and the long diameter D2 is 0.5 μm or more. Further, 300 μm or less, and the ratio of D2 to D1, that is, D2/D1 is 1.0 or more and 30 or less. Further, the average fiber length of the glass fibers is preferably 0.75 μm or more and 300 μm or less. Such glass fibers are also referred to as ground fibers and can be obtained by pulverizing long fibers. The inorganic filler other than the pigment may be used in an amount of usually 10 to 500 parts by mass based on 100 parts by mass of the polyolefin resin.

<流動性改善劑> <Liquidity improver>

於本實施形態之半導體發光裝置中,反射體亦可含有流動性改善劑。即,反射體形成用樹脂組成物可含有流動性改善劑。藉由含有流動性改善劑,可使含有顏料或除顏料以外之無機填料之反射體形成用樹脂組成物的成形性提昇。 In the semiconductor light-emitting device of the embodiment, the reflector may further contain a fluidity improver. In other words, the resin composition for forming a reflector may contain a fluidity improver. By containing a fluidity improver, the formability of the resin composition for forming a reflector containing a pigment or an inorganic filler other than the pigment can be improved.

作為流動性改善劑,可列舉:聚乙烯蠟、聚丙烯蠟、極性蠟、液態石 蠟、用作矽烷偶合劑之矽烷化合物、及金屬皂等。上述流動性改善劑可僅使用1種,亦可將2種以上併用。 Examples of the fluidity improving agent include polyethylene wax, polypropylene wax, polar wax, and liquid stone. Wax, a decane compound used as a decane coupling agent, and a metal soap. The fluidity improving agent may be used alone or in combination of two or more.

於本實施形態中,就無機物質於樹脂中之分散性、相溶性較高,且可提昇製成反射器時之反射率、機械特性、尺寸穩定性之觀點而言,作為流動性改善劑,較佳為使用用作矽烷偶合劑之矽烷化合物。作為該等矽烷化合物,例如可列舉:六甲基二矽氮烷等二矽氮烷;環狀矽氮烷;三甲基矽烷、三甲基氯矽烷、二甲基二氯矽烷、甲基三氯矽烷、烯丙基二甲基氯矽烷、三甲氧基矽烷、苄基二甲基氯矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、異丁基三甲氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、三甲基甲氧基矽烷、羥基丙基三甲氧基矽烷、苯基三甲氧基矽烷、正丁基三甲氧基矽烷、正十六烷基三甲氧基矽烷、正十八烷基三甲氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、及乙烯基三乙醯氧基矽烷等烷基矽烷化合物;γ-胺基丙基三乙氧基矽烷、γ-(2-胺基乙基)胺基丙基三甲氧基矽烷、γ-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-(2-胺基乙基)3-胺基丙基三甲氧基矽烷、及N-β-(N-乙烯基苄基胺基乙基)-γ-胺基丙基三甲氧基矽烷、己基三甲氧基矽烷等胺基矽烷化合物等。 In the present embodiment, the fluidity improving agent is high in dispersibility and compatibility in the resin, and the fluidity improving agent can be improved from the viewpoint of improving reflectance, mechanical properties, and dimensional stability when the reflector is formed. It is preferred to use a decane compound which is used as a decane coupling agent. Examples of the decane compound include diazane gas such as hexamethyldiazepine; cyclic decazane; trimethyl decane, trimethyl chlorodecane, dimethyl dichloro decane, and methyl trisole; Chlorodecane, allyldimethylchlorodecane, trimethoxydecane, benzyldimethylchlorodecane, methyltrimethoxydecane, methyltriethoxydecane, isobutyltrimethoxydecane, dimethyl Dimethoxy decane, dimethyl diethoxy decane, trimethyl methoxy decane, hydroxypropyl trimethoxy decane, phenyl trimethoxy decane, n-butyl trimethoxy decane, positive sixteen Alkyltrimethoxydecane, n-octadecyltrimethoxydecane, vinyltrimethoxydecane, vinyltriethoxydecane, gamma-methacryloxypropyltrimethoxydecane, and vinyl An alkyldecane compound such as triethoxydecane; γ-aminopropyltriethoxydecane, γ-(2-aminoethyl)aminopropyltrimethoxydecane, γ-(2-amino group Ethyl)aminopropylmethyldimethoxydecane, N-phenyl-3-aminopropyltrimethoxydecane, N-(2-aminoethyl)3-aminopropyltrimethyl Silane-yl, and N-β- (N- vinyl benzyl aminoethyl) [gamma] aminopropyl trimethoxy Silane, hexyl group and the like trimethoxy Silane Silane compound.

流動性改善劑相對於聚烯烴樹脂100質量份通常可於0.1~50質量份之範圍內使用。 The fluidity improver can be usually used in an amount of 0.1 to 50 parts by mass based on 100 parts by mass of the polyolefin resin.

<其他添加劑> <Other additives>

再者,於本發明之樹脂組成物中,只要無損本發明之效果,亦可含有各種添加劑。例如,為了改善樹脂組成物之性質,亦可摻合各種聚矽氧粉 末、熱塑性彈性體、有機合成橡膠、脂肪酸酯、甘油酸酯、硬脂酸鋅、硬脂酸鈣等內部脫模劑、或者二苯甲酮系、水楊酸系、氰基丙烯酸酯系、異三聚氰酸酯系、草酸醯替苯胺系、苯甲酸酯系、受阻胺系、苯并三唑系、酚系等抗氧化劑、或受阻胺系、苯甲酸酯系等光穩定劑等添加劑。 Further, in the resin composition of the present invention, various additives may be contained as long as the effects of the present invention are not impaired. For example, in order to improve the properties of the resin composition, various polyoxynitride powders may be blended. Internal mold release agent such as thermoplastic elastomer, organic synthetic rubber, fatty acid ester, glycerate, zinc stearate, calcium stearate, or benzophenone, salicylic acid or cyanoacrylate , isomeric isocyanate, oxalic acid anilide, benzoate, hindered amine, benzotriazole, phenolic antioxidants, or hindered amines, benzoates, etc. Additives such as agents.

於本實施形態中,反射體形成用樹脂組成物可將上述熱塑性樹脂、異三聚氰酸酯化合物、及顏料及視需要所使用之除顏料以外之無機填料、流動性改善劑及其他添加劑進行熔融混練而以顆粒等造粒物之形式製造而得。作為熔融混練方法,可使用熔融混練擠出機、二輥研磨機或三輥研磨機、均化器、行星式混合機等攪拌機、聚合物實驗室測試系統(PolyLab System)或密閉型混練機(Laboplastomill)等熔融混練機等公知之熔融混練方法。 In the present embodiment, the resin composition for forming a reflector can be obtained by using the thermoplastic resin, the isocyanurate compound, and the pigment, and optionally an inorganic filler other than the pigment, a fluidity improver, and other additives. It is melt-kneaded and produced in the form of granules such as granules. As the melt-kneading method, a melt kneading extruder, a two-roll mill or a three-roll mill, a homogenizer, a planetary mixer or the like, a polymer laboratory test system (PolyLab System) or a closed type kneader ( A well-known melt kneading method such as a melt kneader such as Laboplastomill).

又,由反射體形成用樹脂組成物所獲得之硬化物可藉由使用各種成形方法將該反射體形成用樹脂組成物製成特定形狀之成形體,並對該成形體進行硬化處理而獲得。 In addition, the cured product obtained from the resin composition for forming a reflector can be obtained by forming the resin composition for forming a reflector into a molded body having a specific shape by various molding methods, and curing the molded body.

作為成形方法,可使用轉移成形、壓縮成形、射出成形等成形方法。例如,於使用射出成形方法之情形時,可於缸體溫度200~400℃、模具溫度20~150℃進行射出成形而獲得。作為對如此獲得之成形體進行硬化處理之方法,通常可藉由照射游離放射線而獲得硬化物。即,較佳為反射體係由利用游離放射線將反射體形成用樹脂組成物硬化而成之硬化物所構成。作為游離放射線,可列舉電子束、紫外線等,就可於相對較短之時間內獲得硬化物之觀點而言,較佳為使用電子束。 As the molding method, a molding method such as transfer molding, compression molding, or injection molding can be used. For example, in the case of using an injection molding method, it can be obtained by injection molding at a cylinder temperature of 200 to 400 ° C and a mold temperature of 20 to 150 ° C. As a method of hardening the molded body thus obtained, a cured product can usually be obtained by irradiating free radiation. In other words, it is preferable that the reflection system is made of a cured product obtained by curing a resin composition for forming a reflector by using free radiation. The free radiation includes an electron beam, an ultraviolet ray, etc., and an electron beam is preferably used from the viewpoint of obtaining a cured product in a relatively short period of time.

於使用電子束作為游離放射線情形時,電子束之加速電壓可 根據所使用之樹脂組成物之大小或成形體之厚度進行適當選擇。例如,於厚度為1mm左右之成形體之情形時通常加速電壓為250~3000kV左右,可使所使用之交聯處理劑交聯,並使之硬化。再者,於電子束之照射時,加速電壓越高則穿透能力越增加,因此於使用因電子束而引起劣化之基材作為基材之情形時,以使電子束之穿透深度與成形體之厚度實質上相等之方式,選定加速電壓,藉此可抑制對成形體照射多餘之電子束,可將因過量電子束所造成之成形體之劣化止於最小限度。又,照射電子束時之吸收劑量係根據樹脂組成物之組成進行適當設定,較佳為使成形體中之交聯密度飽和之量,照射線量較佳為50~600kGy,尤佳為100~250kGy。 When using an electron beam as the free radiation, the accelerating voltage of the electron beam can be It is suitably selected according to the size of the resin composition to be used or the thickness of the molded body. For example, in the case of a molded body having a thickness of about 1 mm, the acceleration voltage is usually about 250 to 3000 kV, and the crosslinking treatment agent to be used can be crosslinked and hardened. Further, when the electron beam is irradiated, the higher the acceleration voltage is, the more the penetrating ability is increased. Therefore, when the substrate which is deteriorated by the electron beam is used as the substrate, the penetration depth and formation of the electron beam are made. The acceleration voltage is selected such that the thickness of the body is substantially equal, thereby suppressing the irradiation of the excess electron beam to the molded body, and the deterioration of the molded body due to the excessive electron beam can be minimized. Further, the absorbed dose when irradiating the electron beam is appropriately set depending on the composition of the resin composition, and is preferably an amount which saturates the crosslinking density in the molded body, and the irradiation amount is preferably from 50 to 600 kGy, particularly preferably from 100 to 250 kGy. .

進而,作為電子束源,並無特別限制,例如可使用Cockcroft Walton型、Van de Graaff型、共振變壓器型、絕緣芯變壓器型、或直線型、高頻高壓加速器型、高頻型等各種電子束加速器。 Further, the electron beam source is not particularly limited, and for example, various electron beams such as a Cockcroft Walton type, a Van de Graaff type, a resonant transformer type, an insulated core transformer type, or a linear type, a high frequency high voltage accelerator type, and a high frequency type can be used. accelerator.

[附反射器之引線框架] [Lead frame with reflector]

本發明之實施形態之附反射器之引線框架係由上述反射體形成用樹脂組成物之硬化物所構成。引線框架表示用以載置反射器之基板。 The lead frame with a reflector according to the embodiment of the present invention is composed of a cured product of the resin composition for forming a reflector. The lead frame represents a substrate on which the reflector is placed.

反射器可作為上述半導體發光裝置之一部分而組入,亦可與由其他材料構成之半導體發光裝置(LED安裝用基板)組合。反射器主要具有使來自半導體發光裝置之LED元件之光朝透鏡(出光部)反射之作用。關於反射器之詳細情況,由於與上述反射器12相同,故而於此處省略說明。 The reflector may be incorporated as part of the semiconductor light-emitting device described above, or may be combined with a semiconductor light-emitting device (LED mounting substrate) made of another material. The reflector mainly has a function of reflecting light from the LED elements of the semiconductor light-emitting device toward the lens (light-emitting portion). The details of the reflector are the same as those of the reflector 12 described above, and thus the description thereof is omitted here.

引線框架只要為於半導體發光裝置之領域中所使用者,則無論為何種均可使用。作為引線框架之材料,例如可列舉由氧化鋁、或氮化鋁、莫來石、玻璃等燒結體所構成之陶瓷等。除此以外,亦可列舉聚醯亞胺樹脂等 具有可撓性之樹脂材料等。尤其是作為由金屬構成之引線框架,多數情況下使用鋁、銅及銅合金,為了提昇反射率亦大多藉由銀等反射率較高之貴金屬進行鍍敷。尤其是由金屬形成之反射器用基板亦大多被稱為引線框架。形成於引線框架之端子部等亦可藉由半蝕刻形成。具體而言,藉由於上述引線框架,將上述反射體形成用樹脂組成物進行射出成形,而成形為所需之反射器形狀,並使之硬化,藉此製造出本發明之附反射器之引線框架。 The lead frame can be used as long as it is used by a user in the field of a semiconductor light-emitting device. Examples of the material of the lead frame include ceramics composed of alumina, or sintered bodies such as aluminum nitride, mullite, and glass. In addition to this, polyimine resin, etc. A flexible resin material or the like. In particular, as a lead frame made of a metal, aluminum, copper, and a copper alloy are often used, and in order to increase the reflectance, plating is usually performed by a noble metal having a high reflectance such as silver. In particular, a substrate for a reflector formed of a metal is also often referred to as a lead frame. The terminal portion or the like formed on the lead frame may be formed by half etching. Specifically, the resin composition for forming a reflector is injection-molded by the lead frame, and is formed into a desired reflector shape and cured, thereby producing a lead wire of the reflector of the present invention. frame.

本實施形態之附反射器之引線框架之厚度(反射器之厚度)較佳為0.1~3.0mm,更佳為0.1~1.0mm,進而較佳為0.1~0.8mm。 The thickness of the lead frame (reflector thickness) of the reflector with this embodiment is preferably 0.1 to 3.0 mm, more preferably 0.1 to 1.0 mm, still more preferably 0.1 to 0.8 mm.

關於本實施形態之附反射器之引線框架,將LED晶片載置於其上並進而利用公知之密封劑進行密封,並進行黏晶而製成所需之形狀,藉此製成半導體發光裝置。再者,本實施形態之附反射器之引線框架作為反射器發揮作用,但亦可作為支撐半導體發光裝置之框架而發揮功能。 With regard to the lead frame with a reflector of the present embodiment, the LED wafer is placed thereon and further sealed with a known sealing agent, and bonded to a desired shape, thereby fabricating a semiconductor light-emitting device. Further, the lead frame with a reflector of the present embodiment functions as a reflector, but may function as a frame for supporting the semiconductor light-emitting device.

[實施例] [Examples]

使用實施例對本發明詳細地進行說明。本發明並不限定於該等實施例。 The invention will be described in detail using the examples. The invention is not limited to the embodiments.

[測定方法] [test methods]

<流動性(MVR)之測定> <Measurement of Fluidity (MVR)>

樹脂組成物之MVR(單位:cm3/60秒)係藉由依據JIS K 7210:1999熱塑性塑膠之MVR所記載之方法者進行測定。具體而言,於試驗溫度280℃、試驗荷重2.16kg、60秒之條件下進行。作為測定裝置,使用CEAST公司製造之熔融流動測試機(Melt Flow Tester)。 The MVR (unit: cm 3 /60 sec) of the resin composition was measured by the method described in JVR of JIS K 7210:1999 thermoplastic. Specifically, it was carried out under the conditions of a test temperature of 280 ° C and a test load of 2.16 kg and 60 seconds. As the measuring device, a melt flow tester (Melt Flow Tester) manufactured by CEAST Corporation was used.

<成形性> <formability>

使用射出成形機Sodick TR40ER Sodick(預塑化式),使上述獲得之顆粒而對樹脂組成物(厚度:500μm,外形尺寸:50mm×50mm)進行成形。射出成形機條件係設為缸體溫度:270℃、模具溫度:80℃、射出速度:100mm/sec、保壓力:80MPa、保壓時間:1sec、冷卻時間:8sec。成形性係根據成形時之柱塞穩定性進行評價。 The resin composition (thickness: 500 μm, outer dimension: 50 mm × 50 mm) was molded using the injection molding machine Sodick TR40ER Sodick (preplasticized formula). The conditions of the injection molding machine were set to a cylinder temperature: 270 ° C, a mold temperature: 80 ° C, an injection speed: 100 mm/sec, a holding pressure: 80 MPa, a dwell time: 1 sec, and a cooling time: 8 sec. The formability was evaluated based on the plunger stability at the time of molding.

A:成形性良好,且柱塞位置穩定 A: good formability and stable plunger position

B:可成形,但柱塞位置不穩定(有發生不良情況之可能性) B: Formable, but the plunger position is unstable (the possibility of a bad situation)

C:無法成形 C: unable to form

<尺寸穩定性> <Dimensional stability>

關於對各實施例及比較例中所製作之光半導體安裝用基板進行切割並進行單片化而得者,利用數位顯微鏡(KEYENCE股份有限公司製造之VHX1000)對倍率進行適當調節,從而對縱向與橫向之尺寸進行測定。繼而,於設定為表面溫度265℃之加熱板上加熱20秒鐘。對加熱後之單片以與加熱前同樣之方式,利用數位顯微鏡對縱向與橫向之尺寸進行測定。根據上述單片之加熱前後之尺寸差,算出尺寸變化率。尺寸變化率係分別算出上述單片之縱向與橫向之尺寸變化率,將此時之尺寸變化率更大之方向之結果作為尺寸穩定性,而將測定結果示於第1表。將上述單片於265℃放置20秒鐘係假定進行加熱而使焊料熔融從而將半導體發光裝置固定等之半導體發光裝置安裝於配線基板上時之高熱處理的條件。 The optical semiconductor mounting substrate produced in each of the examples and the comparative examples was cut and singulated, and the magnification was appropriately adjusted by a digital microscope (VHX1000 manufactured by KEYENCE Co., Ltd.) to The lateral dimensions were measured. Then, it was heated on a hot plate set to a surface temperature of 265 ° C for 20 seconds. The longitudinal and transverse dimensions were measured by a digital microscope in the same manner as before heating. The dimensional change rate was calculated from the difference in size between the above-described single sheets before and after heating. The dimensional change rate is obtained by calculating the dimensional change ratio of the longitudinal direction and the lateral direction of the single sheet, and the result of the direction in which the dimensional change rate is larger at this time is taken as the dimensional stability, and the measurement results are shown in the first table. The above-mentioned single sheet was allowed to stand at 265 ° C for 20 seconds, and was subjected to high heat treatment under the assumption that heating was performed to melt the solder to mount the semiconductor light-emitting device such as the semiconductor light-emitting device on the wiring board.

<高溫高濕動作試驗> <High temperature and high humidity action test>

關於各實施例及比較例中所製作之半導體發光裝置,預先於配線基板 上設置焊料,於該焊料上載置該半導體發光裝置,藉由回焊爐加熱至240℃,使焊料熔融而於配線基板上安裝有半導體發光裝置。針對安裝於配線基板之半導體發光裝置,利用瞬間多通道測光系統(Intensified Multichannel Photodetector)(廣動態範圍型)MCPD-9800(大塚電子股份有限公司製造)對定電流200mA發光時之光束進行測定,並設為初期光束(Φ0)。又,使同一半導體發光裝置於溫度85℃、濕度85%RH之環境下以定電流200mA連續發光。累計經過500小時後,利用瞬間多通道測光系統(廣動態範圍型)MCPD-9800(大塚電子股份有限公司製造)對定電流200mA發光時之光束進行測定,並設為500小時後光束(Φ500)。 In the semiconductor light-emitting device produced in each of the examples and the comparative examples, solder is placed on the wiring board in advance, and the semiconductor light-emitting device is placed on the solder, and heated to 240 ° C in a reflow furnace to melt the solder on the wiring substrate. A semiconductor light emitting device is mounted thereon. For a semiconductor light-emitting device mounted on a wiring substrate, an optical beam of a constant current of 200 mA is measured by an Intensified Multichannel Photodetector (wide dynamic range type) MCPD-9800 (manufactured by Otsuka Electronics Co., Ltd.), and Set as the initial beam (Φ 0 ). Further, the same semiconductor light-emitting device was continuously irradiated with a constant current of 200 mA in an environment of a temperature of 85 ° C and a humidity of 85% RH. After a total of 500 hours, the beam was measured by an instantaneous multi-channel photometric system (wide dynamic range type) MCPD-9800 (manufactured by Otsuka Electronics Co., Ltd.) for a constant current of 200 mA, and set to a beam of 500 hours (Φ 500). ).

根據所測得之初期光束(Φ0)、及500小時後光束(Φ500),依照下述式A算出光束劣化率。 Based on the measured initial light beam (Φ 0 ) and the light beam (Φ 500 ) after 500 hours, the beam deterioration rate was calculated according to the following formula A.

光束劣化率(%)=|(Φ5000)/Φ0×100|‧‧‧式A Beam degradation rate (%)=|(Φ 5000 )/Φ 0 ×100|‧‧‧式A

將根據初期光束(Φ0)、500小時後光束(Φ500)算出之光束劣化率示於第1表。 The beam deterioration rate calculated from the initial beam (Φ 0 ) and the beam after 500 hours (Φ 500 ) is shown in Table 1.

[實施例1~6,比較例1~2] [Examples 1 to 6, Comparative Examples 1 to 2]

如下述第1表所示般將各種材料進行摻合、混練,而獲得樹脂組成物。 Various materials were blended and kneaded as shown in the following Table 1, to obtain a resin composition.

再者,樹脂組成物係將各種材料進行摻合,並使用擠出機(Nippon Placon股份有限公司MAX30:模具直徑3.0mm)及造粒機(東洋精機製作所股份有限公司MPETC1)進行製作而成。可利用射出成形機(Sodick股份有限公司TR40ER)使該等樹脂組成物成形,從而製作成形體。以加速電壓800kV、200kGy之吸收劑量對成形體照射電子束,而獲得硬化物。基於上述評價方法對所獲得之硬化物之各特性進行評價。將結果示於下述第1表。 Further, the resin composition was prepared by blending various materials and using an extruder (Nippon Placon Co., Ltd. MAX30: mold diameter: 3.0 mm) and a granulator (Toyo Seiki Co., Ltd. MPETC1). The resin composition can be molded by an injection molding machine (Sodick Co., Ltd. TR40ER) to produce a molded body. The formed body was irradiated with an electron beam at an acceleration dose of an acceleration voltage of 800 kV and 200 kGy to obtain a cured product. Each characteristic of the obtained cured product was evaluated based on the above evaluation method. The results are shown in the first table below.

其中,於第1表中, Among them, in the first table,

*1異三聚氰酸三烯丙酯 *1 isocyanurate

*2異三聚氰酸5-十二烷基酯-1,3-二烯丙酯[於通式(1)中,R1為正十二烷基,且R2及R3為烯丙基之化合物] *2 5-pentadecyl cyanate-1,3-diallyl ester [In the formula (1), R 1 is n-dodecyl group, and R 2 and R 3 are allylic groups Base compound]

*3異三聚氰酸單烯丙酯二環氧丙酯 *3 Isopropyl cyanurate diglycidyl ester

*4氧化鈦PF-691(石原產業股份有限公司製造 金紅石型結構 平均粒徑0.21μm) *4 Titanium oxide PF-691 (manufactured by Ishihara Sangyo Co., Ltd. rutile structure average particle size 0.21 μm)

*5碳黑#45(三菱化學股份有限公司製造) *5 carbon black #45 (manufactured by Mitsubishi Chemical Corporation)

*6二氧化矽 玻璃纖維 SS05DE-413(日東紡股份有限公司製造,纖維長度100μm,纖維直徑6.5μm) *6 cerium oxide glass fiber SS05DE-413 (manufactured by Nitto Spin Co., Ltd., fiber length 100 μm, fiber diameter 6.5 μm)

*7聚甲基戊烯樹脂TPX RT18(三井化學股份有限公司製造) *7 polymethylpentene resin TPX RT18 (manufactured by Mitsui Chemicals, Inc.)

*8聚丙烯J137G(Prime Polymer股份有限公司製造) *8 Polypropylene J137G (manufactured by Prime Polymer Co., Ltd.)

*9聚乙烯樹脂Hi-Zex 1300(Prime Polymer股份有限公司製造) *9 Polyethylene resin Hi-Zex 1300 (manufactured by Prime Polymer Co., Ltd.)

*10硬脂酸鋅SZ-2000(脫模劑,堺化學股份有限公司製造) *10 zinc stearate SZ-2000 (release agent, manufactured by 堺Chemical Co., Ltd.)

*11抗氧化劑IRGANOX 1010(BASF JAPAN股份有限公司製造) *11 Antioxidant IRGANOX 1010 (manufactured by BASF JAPAN Co., Ltd.)

*12抗氧化劑Adekastab PEP36[雙(2,6-二-第三丁基-4-甲基苯基)新戊四醇二亞磷酸酯,ADEKA股份有限公司製造] *12 Antioxidant Adekastab PEP36 [bis(2,6-di-t-butyl-4-methylphenyl)neopentitol diphosphite, manufactured by ADEKA Co., Ltd.]

*13 KBM-3063(信越化學股份有限公司製造) *13 KBM-3063 (made by Shin-Etsu Chemical Co., Ltd.)

根據上述實施例之結果明確顯示:於實施例1~6中所獲得之樹脂組成物藉由使用特定之異三聚氰酸酯化合物,即便減少電子束照射量,亦具有充分之硬化性。又,顯示於實施例1~6中所獲得之樹脂組成物由於MVR為6cm3/60秒以上,故而成形性優異。 According to the results of the above examples, it was clearly shown that the resin compositions obtained in Examples 1 to 6 had sufficient curability even by reducing the amount of electron beam irradiation by using a specific isomeric cyanurate compound. Further, it is shown in Examples 1 to 6 obtained in the resin composition due to the more MVR 6cm 3/60 seconds, and therefore is excellent in moldability.

相對於此,於比較例1、2中所獲得之樹脂組成物係使用不同於實施例之異三聚氰酸酯化合物者。於該情形時,顯示出樹脂組成物之流動性或成形性降低。 On the other hand, the resin compositions obtained in Comparative Examples 1 and 2 were different from the isomeric cyanurate compounds of the examples. In this case, the fluidity or formability of the resin composition was lowered.

於比較例1、2中,由於硬化不良,故而耐熱性不足,於製造半導體發光裝置時之焊接步驟及回焊步驟中,樹脂組成物之硬化物發生熔融變形,尺寸變化率變為10%以上。因此,無法製造半導體發光裝置。 In Comparative Examples 1 and 2, the curing resistance was insufficient, and the heat resistance was insufficient. In the welding step and the reflow step in the production of the semiconductor light-emitting device, the cured product of the resin composition was melt-deformed, and the dimensional change rate was 10% or more. . Therefore, it is impossible to manufacture a semiconductor light-emitting device.

10‧‧‧光半導體元件 10‧‧‧Optical semiconductor components

12‧‧‧反射器 12‧‧‧ reflector

14‧‧‧基板 14‧‧‧Substrate

16‧‧‧引線 16‧‧‧ lead

18‧‧‧透鏡 18‧‧‧ lens

Claims (8)

一種半導體發光裝置,其具有:含有下述通式(1)表示之異三聚氰酸酯(isocyanurate)化合物及顏料之反射體, [式中,R1表示可含有雜原子之碳數4~30之烴基,R2及R3表示碳數3~6之烯基,R2及R3可相同,亦可不同]。 A semiconductor light-emitting device comprising: a reflector containing an isocyanurate compound represented by the following formula (1) and a pigment; In the formula, R 1 represents a hydrocarbon group having 4 to 30 carbon atoms which may contain a hetero atom, and R 2 and R 3 represent an alkenyl group having 3 to 6 carbon atoms, and R 2 and R 3 may be the same or different. 如申請專利範圍第1項之半導體發光裝置,其中,上述顏料為白色顏料或黑色顏料。 The semiconductor light-emitting device of claim 1, wherein the pigment is a white pigment or a black pigment. 如申請專利範圍第1或2項之半導體發光裝置,其中,上述反射體含有二氧化矽(silica)。 The semiconductor light-emitting device of claim 1 or 2, wherein the reflector comprises silica. 如申請專利範圍第1至3項中任一項之半導體發光裝置,其中,上述反射體含有流動性改善劑。 The semiconductor light-emitting device according to any one of claims 1 to 3, wherein the reflector contains a fluidity improver. 如申請專利範圍第1至4項中任一項之半導體發光裝置,其中,上述反射體含有聚烯烴樹脂。 The semiconductor light-emitting device according to any one of claims 1 to 4, wherein the reflector comprises a polyolefin resin. 如申請專利範圍第1至5項中任一項之半導體發光裝置,其中,上述反射體係由藉由游離放射線硬化而成之硬化物所構成。 The semiconductor light-emitting device according to any one of claims 1 to 5, wherein the reflection system is composed of a cured product obtained by free radiation hardening. 一種反射體形成用樹脂組成物,其形成申請專利範圍第1至6項中任一項之半導體發光裝置所具備之反射體。 A resin composition for forming a reflector, which is a reflector provided in the semiconductor light-emitting device according to any one of claims 1 to 6. 一種附反射器之引線框架,其係由申請專利範圍第7項之反射體形成用樹脂組成物之硬化物所構成。 A lead frame with a reflector comprising a cured product of a resin composition for forming a reflector of claim 7 of the patent application.
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TWI782050B (en) * 2017-06-30 2022-11-01 日本商出光興產股份有限公司 Thermosetting material and method for forming the thermosetting material

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JPS6090206A (en) * 1983-10-24 1985-05-21 Nippon Kasei Kk Olefinic polymer composition and olefinic polymer
JP4984743B2 (en) * 2006-08-24 2012-07-25 日本化成株式会社 Crosslinker, crosslinkable elastomer composition and molded article thereof, crosslinkable thermoplastic resin composition and molded article thereof
JP2012102244A (en) * 2010-11-10 2012-05-31 Kaneka Corp Thermosetting resin composition and package of semiconductor using the same
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TWI782050B (en) * 2017-06-30 2022-11-01 日本商出光興產股份有限公司 Thermosetting material and method for forming the thermosetting material
US11926683B2 (en) 2017-06-30 2024-03-12 Idemitsu Kosan Co., Ltd. Curable material and method for molding said thermally curable material
CN113614172A (en) * 2019-03-28 2021-11-05 四国化成工业株式会社 Resin composition and use thereof

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