TW201608743A - Reflector and resin composition - Google Patents

Reflector and resin composition Download PDF

Info

Publication number
TW201608743A
TW201608743A TW104125078A TW104125078A TW201608743A TW 201608743 A TW201608743 A TW 201608743A TW 104125078 A TW104125078 A TW 104125078A TW 104125078 A TW104125078 A TW 104125078A TW 201608743 A TW201608743 A TW 201608743A
Authority
TW
Taiwan
Prior art keywords
reflector
mass
resin
resin composition
fibrous filler
Prior art date
Application number
TW104125078A
Other languages
Chinese (zh)
Inventor
Tomoki Sasou
Katsuya Sakayori
Kei Amagai
Satoru Kanke
Toshiyuki Sakai
Keisuke Hashimoto
Hiroyuki Hasegawa
Akihiro Maeda
Makoto Mizoshiri
Original Assignee
Dainippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Printing Co Ltd filed Critical Dainippon Printing Co Ltd
Publication of TW201608743A publication Critical patent/TW201608743A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

Abstract

The present invention relates to a reflector having a light reflecting surface which is formed from a resin composition containing a resin and an inorganic filler including a white pigment and a fibrous filler. The cross sectional area in the radial direction of said fibrous filler is 1-100 [mu]m2, inclusive. By using a simultaneous thermogravimetric/differential thermal analyzer based on a TG-DTA method, the mass of said reflector before heated is measured, and thereafter the content of remaining ash is measured after said reflector is heated, in the ambient atmosphere, to 600 DEG C at 10 DEG C/min and then for 30 minutes at 600 DEG C. Since the measured content of the remaining ash is 70-90 mass%, inclusive, on the basis of the total mass of said reflector before heated, the present invention is capable of ensuring excellent adhesiveness of the reflector to a substrate while at least maintaining basic performance such as heat resistance and reflectivity requirements.

Description

反射器、附反射器之引線框架、半導體發光裝置及樹脂組成物 Reflector, lead frame with reflector, semiconductor light-emitting device and resin composition

本發明係關於一種反射器、附反射器之引線框架、半導體發光裝置及樹脂組成物。 The present invention relates to a reflector, a lead frame with a reflector, a semiconductor light-emitting device, and a resin composition.

先前,作為將電子零件構裝至基板等方法,採用於將電子零件暫時固定於在特定部位預先點焊有焊料之基板上後,藉由紅外線、熱風等手段對該基板進行加熱而使焊料熔融,從而固定電子零件之方法(迴焊(reflow)法)。藉由該方法,可提高基板表面上之電子零件之構裝密度。 Conventionally, as a method of attaching an electronic component to a substrate, the electronic component is temporarily fixed to a substrate on which solder is spot-welded in a specific portion, and then the substrate is heated by infrared rays or hot air to melt the solder. , a method of fixing electronic parts (reflow method). By this method, the mounting density of the electronic components on the surface of the substrate can be increased.

又,作為半導體發光裝置之一之LED元件係小型、壽命較長且省電性優異,因此廣泛地用作顯示燈等光源。而且,近年來,相對低價地製造亮度更高之LED元件,因此研究作為代替螢光燈及白熾燈泡之光源之利用。於應用於此種光源之情形時,為了獲得較大之照度,多用如下方式:於表面構裝型LED封裝體、即於鋁等金屬製之基板(LED構裝用基板)上配置多個LED元件,於各LED元件之周圍配設使光向特定方向反射之反射器(反射體)。 Moreover, since the LED element which is one of the semiconductor light-emitting devices is small, has a long life, and is excellent in power-saving property, it is widely used as a light source such as a display lamp. Further, in recent years, LED elements having higher brightness have been manufactured at relatively low cost, and therefore, use as a light source instead of a fluorescent lamp and an incandescent light bulb has been studied. In the case of being applied to such a light source, in order to obtain a large illuminance, a plurality of LEDs are disposed on a surface-mounted LED package, that is, a substrate made of metal such as aluminum (a substrate for LED assembly). In the element, a reflector (reflector) that reflects light in a specific direction is disposed around each of the LED elements.

然而,LED元件係於發光時伴有發熱,故而此種方式之LED照明裝置係因LED元件發光時之溫度上升而反射器劣化,從而其反射率下 降,因此亮度下降,導致LED元件之短壽命化等。因此,對反射器要求耐熱性。 However, the LED element is accompanied by heat generation during light emission. Therefore, the LED illumination device of this type is caused by the temperature rise of the LED element when the light is emitted, and the reflector is deteriorated, so that the reflectance is lower. As a result of the drop, the brightness is lowered, resulting in a short life of the LED element. Therefore, heat resistance is required for the reflector.

為了因應上述耐熱性之要求,於專利文獻1中提出使用於發光二極體之反射器中的聚合物組成物,具體而言,揭示有包含聚鄰苯二甲醯胺、碳黑、二氧化鈦、玻璃纖維、及抗氧化劑之聚合物組成物。而且,揭示有:對該組成物測定熱老化後之反射率,與不含有碳黑之聚合物組成物相比,該組成物係可獲得良好之反射率,黃變亦較少。然而,專利文獻1中記載之聚合物組成物之熱老化試驗係170℃且3小時之短時間內之評價,是否可於更長時間之實用條件下之耐熱耐久性方面獲得良好之結果並不明確。 In order to meet the above requirements for heat resistance, Patent Document 1 proposes a polymer composition for use in a reflector of a light-emitting diode, and specifically, discloses polyphthalamide, carbon black, titanium oxide, A polymer composition of glass fibers and an antioxidant. Further, it has been revealed that the reflectance after heat aging of the composition is measured, and the composition has a good reflectance and less yellowing as compared with a polymer composition containing no carbon black. However, the heat aging test of the polymer composition described in Patent Document 1 is evaluated at 170 ° C for a short period of 3 hours, and it is possible to obtain good results in terms of heat resistance durability under practical conditions for a longer period of time. clear.

又,於專利文獻2中,揭示有使用於組合光半導體元件與螢光體等波長轉換手段而成之光半導體裝置的熱硬化性光反射用樹脂組成物。該專利文獻2中記載之熱硬化性光反射用樹脂組成物之熱老化試驗係於150℃且500小時之更實用之條件下進行驗證,但成形時間為90秒而比熱塑性樹脂更長,又,作為後硬化處理而需要於150℃進行2小時,故而於生產性上存在問題。 Further, Patent Document 2 discloses a resin composition for thermosetting light reflection which is used in an optical semiconductor device in which a wavelength conversion means such as an optical semiconductor element or a phosphor is combined. The heat aging test of the thermosetting light-reflecting resin composition described in Patent Document 2 was carried out under the practical conditions of 150 ° C for 500 hours, but the molding time was 90 seconds and was longer than the thermoplastic resin. Since it needs to be carried out at 150 ° C for 2 hours as a post-hardening treatment, there is a problem in productivity.

為了解決該等問題點,於專利文獻3中,記載有含有烯烴樹脂、具有分子量為1000以下之烯丙基系取代基之交聯處理劑、球狀溶融氧化矽、玻璃纖維等無機粒子、及白色顏料之樹脂組成物。又,記載有:此種樹脂組成物具有優異之耐熱性,故而於經過迴焊步驟製作反射器等成形體之情形時有用。 In order to solve such a problem, Patent Document 3 discloses inorganic particles containing an olefin resin, a crosslinking treatment agent having an allyl group having a molecular weight of 1,000 or less, spherical cerium oxide oxide, glass fiber, and the like. A resin composition of a white pigment. Further, it is described that such a resin composition has excellent heat resistance, and therefore it is useful when a molded body such as a reflector is produced by a reflow step.

然而,如下情形逐漸變明確:於在上述樹脂組成物中使用玻 璃纖維作為無機粒子、例如製作反射器之情形時,隨著反射器之要求厚度變薄,而反射器之變形變得明顯,反射器與基板之密接性惡化。於該情形時,推測為被封裝之LED元件之密封不徹底,作為發光裝置之壽命變短。 However, the following situation becomes clearer: the use of glass in the above resin composition When the glass fiber is used as an inorganic particle, for example, when a reflector is formed, the thickness of the reflector becomes thinner, and the deformation of the reflector becomes conspicuous, and the adhesion between the reflector and the substrate is deteriorated. In this case, it is presumed that the sealed LED element is not completely sealed, and the life of the light-emitting device is shortened.

因此,於使用玻璃纖維作為無機粒子之情形時,要求於至少維持所要求之耐熱性等基本性能之狀態下,具有與基板之優異之密接性的反射器。 Therefore, when glass fiber is used as the inorganic particle, it is required to have a reflector excellent in adhesion to the substrate in a state where at least the required basic properties such as heat resistance are maintained.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特表2006-503160號公報 [Patent Document 1] Japanese Patent Publication No. 2006-503160

[專利文獻2]日本特開2009-149845號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-149845

[專利文獻3]日本特開2013-166926號公報 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2013-166926

本發明之課題在於提供一種於至少維持所要求之耐熱性、反射率等基本性能之狀態下,具有與基板之優異之密接性的反射器。 An object of the present invention is to provide a reflector having excellent adhesion to a substrate while maintaining at least the required basic properties such as heat resistance and reflectance.

本發明人等藉由使用於徑向上具有特定之截面積的纖維狀填料而解決了上述課題。即,本發明提供下述者。 The inventors of the present invention have solved the above problems by using a fibrous filler having a specific cross-sectional area in the radial direction. That is, the present invention provides the following.

一種反射器,具有藉由樹脂組成物成形而成之光反射面,該樹脂組成物含有樹脂、與含白色顏料及纖維狀填料的無機填料,該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA 法之熱重量/示差熱同步分析裝置測定該反射器之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70%以上且90%以下。 A reflector having a light reflecting surface formed by a resin composition containing a resin and an inorganic filler containing a white pigment and a fibrous filler, wherein the fibrous filler has a radial cross-sectional area of 1 μm 2 Above 100 μm 2 or less, the mass before heating of the reflector is measured using a thermogravimetric/differential thermal synchronous analyzer according to the TG-DTA method, and then heated to 600 ° C at 10 ° C / min in an atmospheric environment, at 600 ° C. The ash component remaining after heating at ° C for 30 minutes is 70% or more and 90% or less based on the total mass of the reflector before heating.

根據本發明,可提供一種於至少維持所要求之耐熱性、反射率等基本性能之狀態下,具有與基板之優異之密接性之反射器。 According to the present invention, it is possible to provide a reflector having excellent adhesion to a substrate in a state in which at least the required basic properties such as heat resistance and reflectance are maintained.

10‧‧‧光半導體元件 10‧‧‧Optical semiconductor components

12‧‧‧反射器 12‧‧‧ reflector

14‧‧‧基板 14‧‧‧Substrate

16‧‧‧引線 16‧‧‧ lead

18‧‧‧透鏡 18‧‧‧ lens

圖1係表示本發明之實施形態之半導體發光裝置之一例的概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing an example of a semiconductor light-emitting device according to an embodiment of the present invention.

圖2係表示本發明之實施形態之半導體發光裝置之一例的概略剖面圖。 Fig. 2 is a schematic cross-sectional view showing an example of a semiconductor light-emitting device according to an embodiment of the present invention.

以下,參照隨附圖式,對本發明之實施形態進行說明,但本發明並不限定於該實施形態。再者,於本說明書中,可任意採用被認為較佳之規定,可謂較佳者彼此之組合更佳。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings, but the present invention is not limited to the embodiments. Furthermore, in the present specification, it is possible to arbitrarily adopt a rule which is considered to be preferable, and it is preferable that the combination of the preferred ones is better.

[1.反射器] [1. Reflector]

本發明之實施形態之反射器具有藉由樹脂組成物成形而成之光反射面,該樹脂組成物含有樹脂、與含白色顏料及纖維狀填料的無機填料(以下,存在稱為反射器用樹脂組成物之情形),該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA法之熱重量/示差熱 同步分析裝置測得該反射器之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70質量%以上且90質量%以下。 The reflector according to the embodiment of the present invention has a light reflecting surface formed by a resin composition containing a resin and an inorganic filler containing a white pigment and a fibrous filler (hereinafter, there is a resin called a reflector). In the case of the material, the radial cross-sectional area of the fibrous filler is 1 μm 2 or more and 100 μm 2 or less, and the quality of the reflector before heating is measured using a thermogravimetric/differential thermal synchronization analyzer according to the TG-DTA method. Thereafter, the temperature is raised to 600 ° C at 10 ° C /min in an atmospheric environment, and then heated at 600 ° C for 30 minutes to retain the ash component, which is 70% by mass or more based on the total mass of the reflector before heating. Below mass%.

若本實施形態之反射器之灰分量未達70質量%,則無法滿足於迴焊步驟中要求之耐熱性。又,若灰分量超過90質量%,則反射器之成形性下降。 If the ash component of the reflector of the present embodiment is less than 70% by mass, the heat resistance required in the reflow step cannot be satisfied. Further, when the ash content exceeds 90% by mass, the formability of the reflector is lowered.

根據上述觀點,上述灰分量之下限值較佳為72質量%,更佳為75質量%。又,上述灰分量之上限值較佳為88質量%,更佳為85質量%。 From the above viewpoint, the lower limit of the ash component is preferably 72% by mass, more preferably 75% by mass. Further, the upper limit of the ash component is preferably 88% by mass, more preferably 85% by mass.

本發明之實施形態之反射器主要具有如下作用:使來自半導體發光裝置之LED元件的光向透鏡(出光部)反射。 The reflector of the embodiment of the present invention mainly has a function of reflecting light from the LED element of the semiconductor light-emitting device toward the lens (light-emitting portion).

本實施形態之反射器可與下述之半導體發光裝置組合使用,亦可與由其他材料所構成之半導體發光裝置、LED構裝用基板等組合使用。對於反射器之詳細內容係與應用於使用圖1及圖2而於下述之半導體發光裝置中之反射器(圖1及圖2中之反射器12)相同,故而於此處省略。 The reflector of this embodiment can be used in combination with the semiconductor light-emitting device described below, or can be used in combination with a semiconductor light-emitting device composed of another material, a substrate for LED assembly, or the like. The details of the reflector are the same as those applied to the reflector (the reflector 12 in FIGS. 1 and 2) used in the semiconductor light-emitting device described below with reference to FIGS. 1 and 2, and thus are omitted here.

本實施形態之反射器可應用於各種用途。例如,可應用於以耐熱性絕緣膜、耐熱性脫模片、太陽電池之光反射片或LED為代表之照明、電視用光源之反射器等。特別是,於LED之情形時,光半導體元件之密封性會對該半導體元件之壽命產生影響,但本實施形態之反射器由於密接性良好且可獲得較高之密封性,故而可較佳地應用於LED。進而,可更佳地應用於如下之金屬基板型LED:藉由蝕刻及半蝕刻而加工製成引線框架,將元件之設置部之背面用作電極。 The reflector of this embodiment can be applied to various uses. For example, it can be applied to a lamp represented by a heat-resistant insulating film, a heat-resistant release sheet, a light-reflecting sheet of a solar cell, or an LED, a reflector for a light source for television, and the like. In particular, in the case of an LED, the sealing property of the optical semiconductor element affects the life of the semiconductor element. However, since the reflector of the embodiment has good adhesion and high sealing property, it is preferable. Applied to LEDs. Further, it can be more preferably applied to a metal substrate type LED which is processed by etching and half etching to form a lead frame, and the back surface of the installation portion of the element is used as an electrode.

其次,詳細地對反射器之構成要素進行說明。 Next, the constituent elements of the reflector will be described in detail.

[2.反射器用樹脂組成物] [2. Resin composition for reflector]

可使用於本發明之實施形態之反射器之光反射面的成形中的反射器用樹脂組成物至少含有樹脂、與含白色顏料及纖維狀填料之無機填料。 The resin composition for a reflector used in the formation of the light-reflecting surface of the reflector of the embodiment of the present invention contains at least a resin and an inorganic filler containing a white pigment and a fibrous filler.

<樹脂> <Resin>

作為可於本實施形態中使用之樹脂,只要為可使用於光反射面之成形中之樹脂即可,可列舉聚醯胺、聚碳酸酯、丙烯酸樹脂、聚縮醛、聚對苯二甲酸乙二酯、聚苯乙烯等。其中,較佳為使用聚烯烴樹脂。樹脂可單獨使用,亦可摻合不同之樹脂而使用。進而,亦可利用由不同之單體獲得之嵌段聚合物、共聚物、三元共聚物。 The resin which can be used in the present embodiment may be any resin which can be used in the molding of the light-reflecting surface, and examples thereof include polyamine, polycarbonate, acrylic resin, polyacetal, and polyethylene terephthalate. Diester, polystyrene, etc. Among them, a polyolefin resin is preferably used. The resin may be used singly or in combination with a different resin. Further, block polymers, copolymers, and terpolymers obtained from different monomers can also be used.

作為聚烯烴樹脂,可列舉使聚乙烯、聚丙烯、聚丁烯、聚甲基戊烯、降莰烯衍生物進行開環複分解聚合所得之樹脂或者其氫化樹脂等。其中,作為聚烯烴樹脂,較佳為選自聚乙烯、聚丙烯、含環狀結構之聚乙烯、含環狀結構之聚丙烯、及聚甲基戊烯中之至少1種。 Examples of the polyolefin resin include a resin obtained by ring-opening metathesis polymerization of polyethylene, polypropylene, polybutene, polymethylpentene, and norbornene derivative, or a hydrogenated resin thereof. Among them, the polyolefin resin is preferably at least one selected from the group consisting of polyethylene, polypropylene, polyethylene having a cyclic structure, polypropylene having a cyclic structure, and polymethylpentene.

聚甲基戊烯具有如下特性:熔點為較高之230~240℃,即便成形溫度為280℃左右亦不會分解而耐化學品性及電絕緣性優異。若考慮此種特性,則聚甲基戊烯等聚烯烴樹脂例如可較佳地使用於半導體發光裝置之反射器。 Polymethylpentene has the following characteristics: a melting point of 230 to 240 ° C is high, and it does not decompose even when the molding temperature is about 280 ° C, and is excellent in chemical resistance and electrical insulation. When such a characteristic is considered, a polyolefin resin such as polymethylpentene can be preferably used, for example, in a reflector of a semiconductor light-emitting device.

作為聚甲基戊烯樹脂,較佳為4-甲基戊烯-1之均聚物,但亦可為4-甲基戊烯-1與其他α-烯烴、例如乙烯、丙烯、1-丁烯、1-戊烯、1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十八烯、1-二十烯、3-甲基-1-丁烯、3-甲基-1-戊烯等碳數2~20之α-烯烴之共聚物,即以4-甲基-1-戊烯為主體之共聚物。 As the polymethylpentene resin, a homopolymer of 4-methylpentene-1 is preferred, but 4-methylpentene-1 and other α-olefins such as ethylene, propylene, and 1-butyl may also be used. Alkene, 1-pentene, 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-octadecene, 1-eicosene, 3-methyl A copolymer of a 2- to 20-membered α-olefin such as 1-butene or 3-methyl-1-pentene, that is, a copolymer mainly composed of 4-methyl-1-pentene.

於本實施形態中,可使用於反射器用樹脂組成物中之聚烯烴 樹脂較佳為重量平均分子量為220,000~800,000。 In the present embodiment, the polyolefin used in the resin composition for a reflector can be used. The resin preferably has a weight average molecular weight of from 220,000 to 800,000.

若聚烯烴樹脂之重量平均分子量處於上述範圍,則可抑制使含有聚烯烴樹脂之反射器用樹脂組成物成形而獲得之反射器等成形體產生龜裂,例如可防止迴焊步驟中之反射器之損壞等。 When the weight average molecular weight of the polyolefin resin is in the above range, cracking of a molded body such as a reflector obtained by molding a resin composition for a reflector containing a polyolefin resin can be suppressed, and for example, a reflector in the reflow step can be prevented. Damage, etc.

又,就含有聚烯烴樹脂之反射器用樹脂組成物之成形性之觀點而言,重量平均分子量之下限值較佳為230,000以上,更佳為240,000以上。又,重量平均分子量之上限值較佳為700,000以下,更佳為650,000以下。 In addition, the lower limit of the weight average molecular weight is preferably 230,000 or more, and more preferably 240,000 or more, from the viewpoint of moldability of the resin composition for a reflector containing a polyolefin resin. Further, the upper limit of the weight average molecular weight is preferably 700,000 or less, more preferably 650,000 or less.

再者,重量平均分子量較佳為藉由凝膠滲透層析法(GPC)而測得之聚苯乙烯換算的重量平均分子量。然而,只要是能以良好再現性測得重量平均分子量之方法,則並不限定於此。例如,可藉由所例示之方法對利用適當之溶劑提取的材料測得重量平均分子量。 Further, the weight average molecular weight is preferably a polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC). However, the method is not limited to this as long as it is a method capable of measuring the weight average molecular weight with good reproducibility. For example, the weight average molecular weight can be determined by the exemplified method for materials extracted with a suitable solvent.

利用GPC之重量平均分子量之測定條件之一例係如下所述。 An example of the measurement conditions using the weight average molecular weight of GPC is as follows.

溶離液:鄰二氯苯 Dissolved solution: o-dichlorobenzene

溫度:140~160℃ Temperature: 140~160°C

流速:1.0mL/min Flow rate: 1.0mL/min

試樣濃度:1.0g/L Sample concentration: 1.0g / L

注入量:300μL Injection volume: 300μL

<無機填料> <Inorganic filler>

於本實施形態中,可使用於反射器用樹脂組成物中之無機填料含有白色顏料及纖維狀填料。以下,對無機填料進行說明。 In the present embodiment, the inorganic filler used in the resin composition for a reflector contains a white pigment and a fibrous filler. Hereinafter, the inorganic filler will be described.

(白色顏料) (white pigment)

於本實施形態中,作為可使用於反射器用樹脂組成物中之白色顏料, 可單獨或者混合使用氧化鈦、硫化鋅、氧化鋅、硫化鋇、鈦酸鉀等。 In the present embodiment, as a white pigment which can be used in the resin composition for a reflector, Titanium oxide, zinc sulfide, zinc oxide, barium sulfide, potassium titanate or the like may be used singly or in combination.

白色顏料係用以對由該樹脂組成物獲得之成形體賦予白色系之色調者,特別是,藉由將其色調設為高度之白色而可提高成形體之光線反射率。於成形體為反射器之情形時,要求良好之光線反射率,故而作為白色顏料,較佳為使用易於獲取且光線反射率亦優異之氧化鈦。 The white pigment is used to impart a white hue to the molded body obtained from the resin composition, and in particular, the light reflectance of the molded body can be improved by setting the color tone to a white color. In the case where the molded body is a reflector, a good light reflectance is required. Therefore, as the white pigment, it is preferred to use titanium oxide which is easy to obtain and excellent in light reflectance.

從考慮成形性且就獲得較高之反射率之觀點而言,白色顏料之平均粒徑於一次粒度分佈中較佳為0.10μm以上且0.50μm以下,更佳為0.10μm以上且0.40μm以下,進而較佳為0.21μm以上且0.25μm以下。平均粒徑可作為利用雷射光繞射法之粒度分佈測定中之質量平均值D50而求出。 The average particle diameter of the white pigment in the primary particle size distribution is preferably 0.10 μm or more and 0.50 μm or less, more preferably 0.10 μm or more and 0.40 μm or less, from the viewpoint of obtaining the moldability and obtaining a high reflectance. Further, it is preferably 0.21 μm or more and 0.25 μm or less. The average particle diameter can be obtained as the mass average value D50 in the particle size distribution measurement by the laser light diffraction method.

(纖維狀填料) (fibrous filler)

於本實施形態中,可使用於反射器用樹脂組成物中之無機填料需含有纖維狀填料,且纖維狀填料之徑向之截面積需為1μm2以上且100μm2以下。若纖維狀填料之徑向之截面積未達1μm2,則因填料強度下降而於加工時變得易於在纖維長度方向上破損、彎折而長度變短,結果無法獲得充分之補強效果而耐熱性下降。 In the present embodiment, the inorganic filler used in the resin composition for a reflector needs to contain a fibrous filler, and the radial cross-sectional area of the fibrous filler needs to be 1 μm 2 or more and 100 μm 2 or less. When the radial cross-sectional area of the fibrous filler is less than 1 μm 2 , the strength of the filler is lowered, and it is easy to be broken and bent in the longitudinal direction of the fiber during processing, and the length is shortened. As a result, a sufficient reinforcing effect cannot be obtained and heat resistance is obtained. Sexual decline.

測定纖維狀填料之截面積之方法有若干種,本實施形態之纖維狀填料之截面積係如下者:破斷半導體發光裝置之反射器,根據對其破斷面進行SEM觀察而獲得之實測值算出。 There are several methods for measuring the cross-sectional area of the fibrous filler. The cross-sectional area of the fibrous filler of the present embodiment is as follows: the reflector of the semiconductor light-emitting device is broken, and the measured value obtained by SEM observation of the fractured section is obtained. Calculated.

即,於SEM圖像中,測得呈現於反射器之截面的纖維狀填料之徑長。於填料之截面為橢圓形狀之情形時,測得該橢圓之長徑及短徑,將長徑與短徑之比為0.8以上且1.2以下者設為對象,將關於至少10個截面之平均值設為纖維狀填料之截面積。 That is, in the SEM image, the diameter of the fibrous filler present in the cross section of the reflector was measured. When the cross section of the filler is an elliptical shape, the long diameter and the short diameter of the ellipse are measured, and the ratio of the long diameter to the short diameter is 0.8 or more and 1.2 or less, and the average value of at least 10 cross sections is used. The cross-sectional area of the fibrous filler was set.

於根據藉由測定而獲得之徑長算出纖維狀填料之截面積時,徑長係設為測定至有效數字3位數為止者。又,截面積係作為纖維狀填料之截面中自截面積較小者起測定總數之50%者之平均值而算出,將算出後之數值之第3位數四捨五入而設為測定值。 When the cross-sectional area of the fibrous filler is calculated from the diameter obtained by the measurement, the diameter is determined by measuring the number of significant digits to three digits. In addition, the cross-sectional area is calculated as an average value of 50% of the total number of the cross-sectional areas in the cross section of the fibrous filler, and the third digit of the calculated value is rounded off to be a measured value.

若纖維狀填料之徑向之截面積超過100μm2,則樹脂中之流動性下降,因此變得難以均勻地填充至反射器與基板之界面附近為止,從而因纖維狀填料變得不存在於界面附近而界面附近之強度下降,於使用於半導體發光裝置等情形時,反射器與基板之密接性下降。 When the radial cross-sectional area of the fibrous filler exceeds 100 μm 2 , the fluidity in the resin is lowered, so that it becomes difficult to uniformly fill the vicinity of the interface between the reflector and the substrate, so that the fibrous filler does not exist at the interface. In the vicinity, the strength in the vicinity of the interface is lowered, and when used in a semiconductor light-emitting device or the like, the adhesion between the reflector and the substrate is lowered.

根據上述觀點,纖維狀填料之徑向之截面積之下限值較佳為30μm2,更佳為35μm2。又,纖維狀填料之徑向之截面積之上限值較佳為85μm2,更佳為50μm2From the above viewpoint, the lower limit of the cross-sectional area of the radial direction of the fibrous filler is preferably 30 μm 2 , more preferably 35 μm 2 . Further, the upper limit of the cross-sectional area in the radial direction of the fibrous filler is preferably 85 μm 2 , more preferably 50 μm 2 .

作為纖維狀填料,可列舉石棉纖維、碳纖維、石墨纖維、金屬纖維、礦渣纖維、石膏纖維、氧化矽纖維、氧化矽-氧化鋁纖維、氧化鋯纖維、氮化硼纖維、氮化矽纖維、硼纖維、玻璃纖維等。 Examples of the fibrous filler include asbestos fibers, carbon fibers, graphite fibers, metal fibers, slag fibers, gypsum fibers, cerium oxide fibers, cerium oxide-alumina fibers, zirconia fibers, boron nitride fibers, cerium nitride fibers, and boron. Fiber, glass fiber, etc.

於該等中,就形成反射器之光反射面且提高光線反射率之觀點而言,纖維狀填料較佳為含有60質量%以上之二氧化矽之玻璃纖維。纖維狀填料中之二氧化矽之比率更佳為65質量%以上,進而較佳為70質量%以上。 In the above, the fibrous filler is preferably a glass fiber containing 60% by mass or more of cerium oxide from the viewpoint of forming a light reflecting surface of the reflector and increasing the light reflectance. The ratio of the cerium oxide in the fibrous filler is more preferably 65% by mass or more, and still more preferably 70% by mass or more.

纖維狀填料之截面形狀可為通常之大致圓形狀,亦可為扁平形狀等異形截面。進而,亦可並非為截面形狀、截面積固定之纖維。該情形時之截面積係規定為將於長度方向上不同之截面積平均而獲得之截面積。 The cross-sectional shape of the fibrous filler may be a generally circular shape or a profiled cross section such as a flat shape. Further, it may not be a fiber having a cross-sectional shape and a cross-sectional area. The cross-sectional area in this case is defined as the cross-sectional area obtained by averaging the cross-sectional areas which are different in the longitudinal direction.

作為一例,於纖維狀填料為玻璃纖維之情形時,作為截面之尺寸,較佳為滿足上述截面積之規定,且截面之短徑D1為0.5μm以上且25μm以 下,長徑D2為0.5μm以上且300μm以下,D2相對於D1之比D2/D1為1.0以上且30以下。又,玻璃纖維之平均纖維長度較佳為0.75μm以上且300μm以下。此種玻璃纖維亦被稱為磨碎纖維(milled fiber),可對長纖維進行粉碎而獲得。 As an example, when the fibrous filler is glass fiber, the cross-sectional area is preferably a size that satisfies the cross-sectional area, and the short-diameter D1 of the cross-section is 0.5 μm or more and 25 μm. Next, the long diameter D2 is 0.5 μm or more and 300 μm or less, and the ratio D2/D1 of D2 to D1 is 1.0 or more and 30 or less. Further, the average fiber length of the glass fibers is preferably 0.75 μm or more and 300 μm or less. Such a glass fiber is also called a milled fiber and can be obtained by pulverizing long fibers.

(其他無機填料) (Other inorganic fillers)

於本實施形態中,作為可調配在反射器用樹脂組成物中之除了白色顏料及纖維狀填料以外的無機填料,一般而言,只要是可調配於熱塑樹脂組成物;如環氧樹脂、丙烯酸樹脂、聚矽氧樹脂這些熱硬化樹脂組成物的無機填料,且為不會阻礙作為反射器之反射特性的無機填料,則可單獨使用或者混合使用。 In the present embodiment, as the inorganic filler other than the white pigment and the fibrous filler which can be blended in the resin composition for a reflector, generally, it can be formulated as a thermoplastic resin composition; for example, an epoxy resin or an acrylic resin. The inorganic filler of the thermosetting resin composition such as a resin or a polyoxynylene resin, and an inorganic filler which does not inhibit the reflection property of the reflector, may be used singly or in combination.

作為一例,可列舉硼酸鋁晶鬚、鎂系晶鬚、矽系晶鬚、矽灰石、絲狀鋁英石、海泡石、硬矽鈣石、氧化矽粒子、層狀矽酸鹽、以有機鎓離子交換所得之層狀矽酸鹽、玻璃薄片、非膨潤性雲母、石墨、金屬箔、陶瓷珠粒、黏土、雲母、絹雲母、沸石、膨潤土(bentonite)、白雲石、高嶺土、粉末矽酸、長石粉、白砂中空球、石膏、均密石英質岩、碳鈉鋁石及白土富勒烯等碳奈米粒子等板狀或粒子狀之無機填料。 Examples include, for example, aluminum borate whiskers, magnesium whiskers, lanthanum whiskers, ash, stone amphibole, sepiolite, hard strontium sulphate, cerium oxide particles, layered ceric acid salts, and the like. Layered tantalate, glass flakes, non-swelling mica, graphite, metal foil, ceramic beads, clay, mica, sericite, zeolite, bentonite, dolomite, kaolin, powder mash obtained by ion exchange of organic hydrazine A plate-like or particulate inorganic filler such as carbon nanoparticle such as acid, feldspar powder, white sand hollow sphere, gypsum, uniform quartzite, dawsonite and white soil fullerene.

<交聯處理劑> <Crosslinking treatment agent>

於本實施形態中,反射器用樹脂組成物亦可進而含有交聯處理劑。於樹脂組成物含有交聯處理劑之情形時,在成形為反射器之形狀後,照射電子束而獲得反射器。藉此,可對本實施形態之反射器賦予更優異之耐熱性。 In the present embodiment, the resin composition for a reflector may further contain a crosslinking treatment agent. In the case where the resin composition contains a crosslinking treatment agent, after being shaped into a shape of a reflector, an electron beam is irradiated to obtain a reflector. Thereby, the reflector of this embodiment can be provided with more excellent heat resistance.

交聯處理劑具有如下結構:具有飽和或者不飽和之至少1個環結構,且於形成環結構之原子中之至少1個原子上鍵結有烯丙基、甲基烯丙基、 經由連結基之烯丙基、及經由連結基之甲基烯丙基中之任一烯丙基系取代基。 The crosslinking treatment agent has a structure of at least one ring structure having a saturated or unsaturated state, and an allyl group, a methallyl group bonded to at least one of the atoms forming the ring structure, Any allyl group-containing substituent via the allyl group of the linking group and the methallyl group via the linking group.

本實施形態之樹脂組成物係藉由含有具有該結構之交聯處理劑而發揮良好之電子束硬化性,具有優異之耐熱性。 The resin composition of the present embodiment exhibits excellent electron beam curability by containing a crosslinking treatment agent having such a structure, and has excellent heat resistance.

作為飽和或者不飽和之環結構,可列舉環狀環、雜環、芳香環等。形成環結構之原子之數量較佳為3~12,更佳為5~8,進而較佳為6員環。環結構之數量較佳為1~3,更佳為1或2,進而較佳為1。 Examples of the saturated or unsaturated ring structure include a cyclic ring, a hetero ring, and an aromatic ring. The number of atoms forming the ring structure is preferably from 3 to 12, more preferably from 5 to 8, and further preferably a 6-membered ring. The number of ring structures is preferably from 1 to 3, more preferably 1 or 2, and still more preferably 1.

交聯處理劑之分子量較佳為1000以下,更佳為500以下,進而較佳為300以下。藉由分子量為1000以下,而於樹脂組成物中獲得良好之分散性,可引起基於電子束照射之有效之交聯反應。 The molecular weight of the crosslinking treatment agent is preferably 1,000 or less, more preferably 500 or less, still more preferably 300 or less. By obtaining a good dispersibility in a resin composition by a molecular weight of 1,000 or less, an effective crosslinking reaction by electron beam irradiation can be caused.

交聯處理劑之熔點較佳為使用之聚烯烴樹脂之熔點以下,例如較佳為200℃以下。 The melting point of the crosslinking treatment agent is preferably not more than the melting point of the polyolefin resin to be used, and is preferably, for example, 200 ° C or lower.

若為上述交聯處理劑,則成形時之流動性優異,故而可使樹脂組成物之成形溫度下降而減輕熱負荷、或減輕成形時之摩擦、或增加含有白色顏料之無機填料的含有率。 When the crosslinking treatment agent is used, the fluidity at the time of molding is excellent, so that the molding temperature of the resin composition can be lowered to reduce the heat load, reduce the friction during molding, or increase the content of the inorganic filler containing a white pigment.

作為交聯處理劑中之連結基,可列舉酯鍵、醚鍵、伸烷基、(雜)伸芳基等。形成環之原子中之不與烯丙基系取代基鍵結之原子成為鍵結有氫、氧、氮等之狀態;或鍵結有各種取代基之狀態。 Examples of the linking group in the crosslinking treatment agent include an ester bond, an ether bond, an alkylene group, and a (hetero) extended aryl group. The atoms in the ring-forming atoms which are not bonded to the allyl-based substituent are in a state in which hydrogen, oxygen, nitrogen, or the like is bonded; or a state in which various substituents are bonded.

於本實施形態中,作為可使用於反射器用樹脂組成物中之交聯處理劑,較佳為於形成有該交聯處理劑之1個環之原子中之至少2個原子上,分別獨立地鍵結有烯丙基系取代基。又,於環結構為6員環之情形時,較佳為於形成有該環之原子中之至少2個原子上,分別獨立地鍵結有 烯丙基系取代基,且較佳為於鍵結有1個烯丙基系取代基之原子之間位上鍵結有其他烯丙基系取代基。 In the present embodiment, the crosslinking treatment agent which can be used in the resin composition for a reflector is preferably independently formed on at least two of the atoms of one ring in which the crosslinking agent is formed. The bond has an allyl group substituent. Further, in the case where the ring structure is a 6-membered ring, it is preferably independently bonded to at least two of the atoms forming the ring. The allyl-based substituent, and preferably another allyl-based substituent is bonded to the atom to which one of the allyl-based substituents is bonded.

進而,交聯處理劑較佳為以下述式(1)或(2)表示。 Further, the crosslinking treatment agent is preferably represented by the following formula (1) or (2).

(式(1)中,R1~R3分別獨立地為烯丙基、甲基烯丙基、經由酯鍵之烯丙基、及經由酯鍵之甲基烯丙基中之任一烯丙基系取代基) (In the formula (1), R 1 to R 3 are each independently an allyl group, a methallyl group, an allyl group via an ester bond, and a methally group via an ester bond. Base substituent)

(式(2)中,R1~R3分別獨立地為烯丙基、甲基烯丙基、經由酯鍵之烯丙基、及經由酯鍵之甲基烯丙基中之任一烯丙基系取代基) (In the formula (2), R 1 to R 3 are each independently an allyl group, a methallyl group, an allyl group via an ester bond, and a methally group via an ester bond. Base substituent)

作為以上述式(1)表示之交聯處理劑,可列舉異氰尿酸三烯丙酯、異氰尿酸甲基二烯丙酯、異三聚氰酸二烯丙基單環氧丙酯、異氰尿酸單烯丙基二環氧丙酯、異氰尿酸三甲基烯丙酯等。 Examples of the crosslinking treatment agent represented by the above formula (1) include triallyl isocyanurate, methyl diallyl isocyanurate, diallyl monoglycidyl isocyanurate, and Monoallyl diglycidyl cyanurate, trimethylallyl isocyanurate, and the like.

作為以上述式(2)表示之交聯處理劑,可列舉鄰苯二甲酸之二烯丙酯、間苯二甲酸之二烯丙酯等。 The crosslinking treatment agent represented by the above formula (2) includes diallyl phthalate, diallyl isophthalate, and the like.

又,於本實施形態中,亦可以改善成形性、作為反射器之物 性值為目的而視需要對聚烯烴樹脂摻合彈性體。 Further, in the present embodiment, it is also possible to improve the formability and the object as a reflector. For the purpose of the property, the elastomer is blended with the polyolefin resin as needed.

彈性體係玻璃轉移溫度為40℃以下之聚合物,包含通常之膠質聚合物及熱塑性彈性體。再者,於為經嵌段共聚合之膠質聚合物等且玻璃轉移溫度為2點以上之情形時,只要最低之玻璃轉移溫度為40℃以下,則可用作本發明之玻璃轉移溫度為40℃以下之膠質聚合物。 The elastomeric system has a glass transition temperature of 40 ° C or less, and comprises a usual colloidal polymer and a thermoplastic elastomer. Further, in the case of a block copolymerized colloidal polymer or the like and the glass transition temperature is 2 or more, the glass transition temperature which can be used as the present invention is 40 as long as the minimum glass transition temperature is 40 ° C or lower. Glue polymer below °C.

作為彈性體之例,可列舉異戊二烯橡膠、其氫化物;氯丁二烯橡膠、其氫化物;乙烯-丙烯共聚物、乙烯-α-烯烴共聚物、丙烯-α-烯烴共聚物等飽和聚烯烴橡膠;乙烯-丙烯-二烯共聚物、α-烯烴-二烯共聚物、異丁烯-異戊二烯共聚物、異丁烯-二烯共聚物等二烯系共聚物、該等之鹵化物、二烯系聚合物或其鹵化物之氫化物;丙烯腈-丁二烯共聚物、其氫化物;偏二氟乙烯-三氟乙烯共聚物、偏二氟乙烯-六氟丙烯共聚物、偏二氟乙烯-六氟丙烯-四氟乙烯共聚物、丙烯-四氟乙烯共聚物等氟橡膠;胺酯(urethane)橡膠、聚矽氧橡膠、聚醚系橡膠、丙烯酸橡膠、氯磺化聚乙烯橡膠、表氯醇橡膠、環氧丙烷橡膠、乙烯丙烯酸系橡膠等特殊橡膠;降莰烯系單體與乙烯或α-烯烴之共聚物、降莰烯系單體、乙烯與α-烯烴之三元共聚物、降莰烯系單體之開環聚合物、降莰烯系單體之開環聚合物氫化物等降莰烯系膠質聚合物;經乳化聚合或溶液聚合之苯乙烯-丁二烯-橡膠、高苯乙烯橡膠等無規或嵌段-苯乙烯-丁二烯系共聚物、該等之氫化物;苯乙烯-丁二烯-苯乙烯-橡膠、苯乙烯-異戊二烯-苯乙烯-橡膠、苯乙烯-乙烯-丁二烯-苯乙烯-橡膠等芳香族乙烯系單體-共軛二烯之無規共聚物、該等之氫化物;苯乙烯-丁二烯-苯乙烯-橡膠、苯乙烯-異戊二烯-苯乙烯-橡膠、苯乙烯-乙烯- 丁二烯-苯乙烯-橡膠等芳香族乙烯系單體-共軛二烯之直鏈狀或放射狀嵌段共聚物、以其等之氫化物等苯乙烯系熱塑性彈性體為代表之胺酯系熱塑性彈性體、聚醯胺系熱塑性彈性體、1,2-聚丁二烯系熱塑性彈性體、氯乙烯系熱塑性彈性體、氟系熱塑性彈性體等熱塑性彈性體等中之與成為主成分之含有脂環結構之熱塑性樹脂不相溶者。 Examples of the elastomer include an isoprene rubber and a hydrogenated product thereof; a chloroprene rubber, a hydrogenated product thereof; an ethylene-propylene copolymer, an ethylene-α-olefin copolymer, a propylene-α-olefin copolymer, and the like. a saturated polyolefin rubber; a diene copolymer such as an ethylene-propylene-diene copolymer, an α-olefin-diene copolymer, an isobutylene-isoprene copolymer, an isobutylene-diene copolymer, or the like a hydride of a diene polymer or a halide thereof; an acrylonitrile-butadiene copolymer, a hydride thereof; a vinylidene fluoride-trifluoroethylene copolymer, a vinylidene fluoride-hexafluoropropylene copolymer, or a partial Fluororubber such as difluoroethylene-hexafluoropropylene-tetrafluoroethylene copolymer, propylene-tetrafluoroethylene copolymer; urethane rubber, polyoxyethylene rubber, polyether rubber, acrylic rubber, chlorosulfonated polyethylene Special rubber such as rubber, epichlorohydrin rubber, propylene oxide rubber, ethylene acrylic rubber; copolymer of norbornene monomer and ethylene or α-olefin, norbornene monomer, ethylene and α-olefin Meta-copolymer, ring-opening polymer of norbornene-based monomer, norbornene-based single a decene-based colloidal polymer such as a ring-opening polymer hydride; a random or block-styrene-butadiene system such as styrene-butadiene-rubber or high-styrene rubber which is subjected to emulsion polymerization or solution polymerization Copolymer, such hydrides; aromatics such as styrene-butadiene-styrene-rubber, styrene-isoprene-styrene-rubber, styrene-ethylene-butadiene-styrene-rubber Random copolymer of vinyl monomer-conjugated diene, such hydride; styrene-butadiene-styrene-rubber, styrene-isoprene-styrene-rubber, styrene-ethylene - A linear or radial block copolymer of an aromatic vinyl monomer such as butadiene-styrene-rubber or a conjugated diene, or an amine ester represented by a styrene thermoplastic elastomer such as a hydride such as a styrene-based rubber And a thermoplastic elastomer such as a thermoplastic elastomer, a polyamide-based thermoplastic elastomer, a 1,2-polybutadiene-based thermoplastic elastomer, a vinyl chloride-based thermoplastic elastomer, or a fluorine-based thermoplastic elastomer, and the like A thermoplastic resin containing an alicyclic structure is incompatible.

於該等中,芳香族乙烯系單體與共軛二烯系單體之共聚物、及其氫化物與含有脂環結構之熱塑性樹脂之分散性良好,故而較佳。芳香族乙烯系單體與共軛二烯系單體之共聚物可為嵌段共聚物,亦可為無規共聚物。就耐候性之方面而言,更佳為將除芳香環以外之部分氫化者。具體而言,可列舉苯乙烯-丁二烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯-嵌段共聚物、苯乙烯-異戊二烯-嵌段共聚物、苯乙烯-異戊二烯-苯乙烯-嵌段共聚物及該等之氫化物、苯乙烯-丁二烯-無規共聚物及該等之氫化物等。 Among these, the copolymer of the aromatic vinyl monomer and the conjugated diene monomer, and the hydrogenated product thereof and the thermoplastic resin containing the alicyclic structure are excellent in dispersibility, which is preferable. The copolymer of the aromatic vinyl monomer and the conjugated diene monomer may be a block copolymer or a random copolymer. In terms of weather resistance, it is more preferable to hydrogenate a part other than the aromatic ring. Specific examples thereof include a styrene-butadiene block copolymer, a styrene-butadiene-styrene-block copolymer, a styrene-isoprene-block copolymer, and a styrene-isoprene. Diene-styrene-block copolymers and such hydrides, styrene-butadiene-random copolymers, and such hydrides.

於本實施形態中,只要不會破壞由該反射器用樹脂組成物成形而成之反射器之功能,則可於反射器用樹脂組成物中含有各種添加劑。例如,可以改善樹脂組成物之性質為目的而調配各種晶鬚、聚矽氧粉末、熱塑性彈性體、有機合成橡膠、脂肪酸酯、甘油酸酯、硬脂酸鋅、硬脂酸鈣等內部脫模劑、二苯甲酮系、水楊酸系、氰基丙烯酸酯系、異氰尿酸酯系、草醯替苯胺(anilide oxalate)系、苯甲酸酯系、受阻胺系、苯并三唑系、酚系等抗氧化劑、或受阻胺系、苯甲酸酯系等光穩定劑等添加劑。 In the present embodiment, various additives can be contained in the resin composition for a reflector as long as the function of the reflector formed by the resin composition for the reflector is not broken. For example, various whiskers, polyfluorene oxide powders, thermoplastic elastomers, organic synthetic rubbers, fatty acid esters, glycerates, zinc stearate, calcium stearate, etc. can be blended for the purpose of improving the properties of the resin composition. Moulding agent, benzophenone system, salicylic acid system, cyanoacrylate system, isocyanurate system, anilide oxalate system, benzoate system, hindered amine system, benzotriene An additive such as an azole or phenolic antioxidant or a light stabilizer such as a hindered amine or benzoate.

又,於反射器用樹脂組成物中,除上述添加劑以外,亦可調配如矽烷偶合劑之分散劑。作為矽烷偶合劑,例如可列舉六甲基二矽氮烷 等二矽氮烷;環狀矽氮烷;三甲基矽烷、三甲基氯矽烷、二甲基二氯矽烷、甲基三氯矽烷、烯丙基二甲基氯矽烷、三甲氧基矽烷、苄基二甲基氯矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、異丁基三甲氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、三甲基甲氧基矽烷、羥丙基三甲氧基矽烷、苯基三甲氧基矽烷、正丁基三甲氧基矽烷、正十六烷基三甲氧基矽烷、正十八烷基三甲氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、γ-甲基丙烯氧基丙基三甲氧基矽烷、及乙烯基三乙醯氧基矽烷等烷基矽烷化合物;γ-胺基丙基三乙氧基矽烷、γ-(2-胺基乙基)胺基丙基三甲氧基矽烷、γ-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-(2-胺基乙基)3-胺基丙基三甲氧基矽烷、及N-β-(N-乙烯基苄基胺基乙基)-γ-胺基丙基三甲氧基矽烷、己基三甲氧基矽烷等胺基矽烷化合物等。 Further, in the resin composition for a reflector, a dispersing agent such as a decane coupling agent may be blended in addition to the above additives. As the decane coupling agent, for example, hexamethyldioxane is exemplified. Dioxazane; cyclic decazane; trimethyl decane, trimethyl chlorodecane, dimethyl dichloro decane, methyl trichloro decane, allyl dimethyl chloro decane, trimethoxy decane, Benzyl dimethyl chlorodecane, methyl trimethoxy decane, methyl triethoxy decane, isobutyl trimethoxy decane, dimethyl dimethoxy decane, dimethyl diethoxy decane, three Methyl methoxy decane, hydroxypropyl trimethoxy decane, phenyl trimethoxy decane, n-butyl trimethoxy decane, n-hexadecyl trimethoxy decane, n-octadecyl trimethoxy decane, a vinyl decane compound such as vinyl trimethoxy decane, vinyl triethoxy decane, γ-methyl propyloxypropyl trimethoxy decane, and vinyl triethoxy decane; γ-aminopropyl Triethoxy decane, γ-(2-aminoethyl)aminopropyltrimethoxydecane, γ-(2-aminoethyl)aminopropylmethyldimethoxydecane, N-benzene 3-aminopropyltrimethoxydecane, N-(2-aminoethyl) 3-aminopropyltrimethoxydecane, and N-β-(N-vinylbenzylaminoethyl )-γ-aminopropyl trimethyl An aminodecane compound such as oxydecane or hexyltrimethoxydecane.

於本實施形態中,反射器用樹脂組成物亦可熔融混練上述聚烯烴樹脂與含有白色顏料及纖維狀填料之無機填料而成形為顆粒等造粒物。作為熔融混練方法,可使用熔融混練擠出機、二輥研磨機或者三輥研磨機、均質機、行星混合機等攪拌機、Polylabo系統或Laboplastomill等熔融混練機等公知之熔融混練方法。 In the present embodiment, the resin composition for a reflector may be melt-kneaded with the polyolefin resin and an inorganic filler containing a white pigment and a fibrous filler to form a granulated product such as pellets. As the melt kneading method, a known melt kneading method such as a melt kneading extruder, a two-roll mill or a three-roll mill, a mixer such as a homogenizer or a planetary mixer, or a melt kneader such as a Polylabo system or a Laboplastomill can be used.

<反射器用樹脂組成物中之各成分之含有率> <Content ratio of each component in the resin composition for a reflector>

於本實施形態中使用之反射器用樹脂組成物中,樹脂之含有率較佳為以反射器用樹脂組成物之總質量為基準,為7質量%以上且30質量%以下。樹脂之含有率之下限值更佳為10質量%,進而較佳為11質量%。又,樹脂之含有率之上限值更佳為28質量%,進而較佳為25質量%以下。若樹脂之 含有率為上述範圍,則可一面確保成形樹脂組成物時之成形性,一面製成耐熱性優異之成形體。 In the resin composition for a reflector used in the present embodiment, the resin content is preferably 7 mass% or more and 30 mass% or less based on the total mass of the resin composition for a reflector. The lower limit of the content of the resin is more preferably 10% by mass, still more preferably 11% by mass. Moreover, the upper limit of the content of the resin is more preferably 28% by mass, and still more preferably 25% by mass or less. If resin When the content is in the above range, the molded article having excellent heat resistance can be obtained while ensuring moldability in molding the resin composition.

於本實施形態中,反射器用樹脂組成物中之無機填料含有率較佳為以反射器用樹脂組成物之總質量為基準,為70質量%以上,更佳為72質量%以上,進而較佳為75質量%以上。就成形性之觀點而言,無機填料含有率之上限值為90質量%左右。若無機填料含有率為70質量%以上,則可滿足於迴焊步驟中要求之耐熱性。 In the present embodiment, the content of the inorganic filler in the resin composition for a reflector is preferably 70% by mass or more, more preferably 72% by mass or more, based on the total mass of the resin composition for a reflector, and more preferably 75 mass% or more. From the viewpoint of moldability, the upper limit of the inorganic filler content is about 90% by mass. When the inorganic filler content is 70% by mass or more, the heat resistance required in the reflow step can be satisfied.

又,就反射器之光反射率、強度、成形翹曲等製品性能之觀點而言,白色顏料之含量較佳為相對於樹脂100質量份設為超過200質量份且500質量份以下。又,更佳為300質量份以上且480質量份以下,進而較佳為350質量份以上且450質量份以下。 In addition, the content of the white pigment is preferably more than 200 parts by mass and not more than 500 parts by mass based on 100 parts by mass of the resin, from the viewpoint of the product such as the light reflectance, the strength, and the warpage of the warpage. Moreover, it is more preferably 300 parts by mass or more and 480 parts by mass or less, and still more preferably 350 parts by mass or more and 450 parts by mass or less.

若白色顏料之含量相對於樹脂100質量份超過200質量份,則可於反射器之光反射率、強度、成形翹曲等方面獲得充分之製品性能。又,若為500質量份以下,則可防止因較多地含有無機成分引起之加工性之惡化、或者成形狀態之惡化。 When the content of the white pigment exceeds 200 parts by mass based on 100 parts by mass of the resin, sufficient product properties can be obtained in terms of light reflectance, strength, warpage of the formation, and the like of the reflector. In addition, when it is 500 parts by mass or less, deterioration of workability due to a large amount of inorganic components or deterioration of a molded state can be prevented.

又,藉由將無機填料中之白色顏料之含量設為上述範圍,可將由該反射器用樹脂組成物成形而成之反射器之色調設為白色系,可獲得作為反射器而較佳之光線反射率。 In addition, by setting the content of the white pigment in the inorganic filler to the above range, the color tone of the reflector formed by the resin composition for the reflector can be made white, and a light reflectance which is preferable as a reflector can be obtained. .

無機填料中之纖維填料之含量較佳為相對於樹脂100質量份為10質量份以上且300質量份以下,更佳為30質量份以上且200質量份以下,進而較佳為50質量份以上且180質量份以下。 The content of the fibrous filler in the inorganic filler is preferably 10 parts by mass or more and 300 parts by mass or less, more preferably 30 parts by mass or more and 200 parts by mass or less, and still more preferably 50 parts by mass or more based on 100 parts by mass of the resin. 180 parts by mass or less.

藉由將無機填料中之纖維填料之含量設為上述範圍,可不阻礙作為反 射器而較佳之光線反射率,而滿足於迴焊步驟中要求之耐熱性。 By setting the content of the fibrous filler in the inorganic filler to the above range, it is possible to prevent The illuminator preferably has a light reflectance that satisfies the heat resistance required in the reflow step.

於本實施形態中,於在反射器用樹脂組成物中含有交聯處理劑之情形時,交聯處理劑之含量可相對於樹脂100質量份設為15質量份以上且40質量份以下、較佳為15質量份以上且30質量份以下、更佳為16質量份以上且20質量份以下。若交聯處理劑為上述範圍內,則可不使交聯處理劑從交聯前之成形體滲出而有效地進行交聯。 In the present embodiment, when the crosslinking agent is contained in the resin composition for a reflector, the content of the crosslinking treatment agent can be 15 parts by mass or more and 40 parts by mass or less, preferably 100 parts by mass or less of the resin. It is 15 parts by mass or more and 30 parts by mass or less, more preferably 16 parts by mass or more and 20 parts by mass or less. When the crosslinking treatment agent is in the above range, the crosslinking treatment agent can be effectively crosslinked without oozing out from the molded body before crosslinking.

<反射器用樹脂組成物之燃燒後之灰分量> <The ash component after combustion of the resin composition for the reflector>

於本實施形態中,要求反射器用樹脂組成物之根據TG-DTA法之灰分量,以加熱前之反射器用樹脂組成物的總質量為基準,為70質量%以上且90質量%以下。 In the present embodiment, the ash component according to the TG-DTA method of the resin composition for a reflector is required to be 70% by mass or more and 90% by mass or less based on the total mass of the resin composition for a reflector before heating.

此處,所謂根據TG-DTA法之灰分量係指與上述條件同樣地使用熱重量/示差熱同步分析裝置測得該反射器用樹脂組成物之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量。 Here, the ash component according to the TG-DTA method means that the mass of the resin composition for the reflector is measured by a thermogravimetric/differential thermal synchronization analyzer in the same manner as the above-described conditions, and is 10 ° C in an atmospheric environment. After heating to 600 ° C /min, the mixture was heated at 600 ° C for 30 minutes to leave a residual ash content.

若反射器用樹脂組成物之灰分未達70質量%,則無法滿足於迴焊步驟中要求之耐熱性、及所需之反射率。又,若灰分量超過90質量%,則反射器之成形性下降。 If the ash content of the resin composition for a reflector is less than 70% by mass, the heat resistance required in the reflow step and the required reflectance cannot be satisfied. Further, when the ash content exceeds 90% by mass, the formability of the reflector is lowered.

根據上述觀點,上述灰分量之下限值較佳為72質量%,更佳為75質量%。又,上述灰分量之上限值較佳為88質量%,更佳為85質量%。 From the above viewpoint, the lower limit of the ash component is preferably 72% by mass, more preferably 75% by mass. Further, the upper limit of the ash component is preferably 88% by mass, more preferably 85% by mass.

於本實施形態中,在由反射器用樹脂組成物成形反射器時,可使用轉移成形、壓縮成形、射出成形等成形方法。例如,於使用射出成形方法之情形時,可於料缸溫度200~400℃且模具溫度20~150℃進行射出 成形而獲得反射器之形狀之成形體。於使用交聯處理劑之情形時,對所獲得之成形體實施電子束照射處理,藉此可獲得進一步硬化之反射器。如上所述,藉由進行電子束照射處理,可進一步提高反射器之耐熱性。 In the present embodiment, when the reflector is molded from the resin composition for a reflector, a molding method such as transfer molding, compression molding, or injection molding can be used. For example, in the case of using the injection molding method, the injection can be performed at a cylinder temperature of 200 to 400 ° C and a mold temperature of 20 to 150 ° C. A molded body which is shaped to obtain a shape of a reflector. In the case where a crosslinking treatment agent is used, the obtained shaped body is subjected to an electron beam irradiation treatment, whereby a further hardened reflector can be obtained. As described above, the heat resistance of the reflector can be further improved by performing the electron beam irradiation treatment.

再者,可對成形前之反射器用樹脂組成物實施電子束照射處理,亦可將該電子束照射處理後之反射器用樹脂組成物成形為作為反射器所期望之形狀。 Further, the resin composition for the reflector before molding may be subjected to electron beam irradiation treatment, or the resin composition for the reflector after the electron beam irradiation treatment may be formed into a shape desired as a reflector.

關於電子束之加速電壓,可根據反射器用樹脂組成物之大小、或成形後之反射器之厚度而適當地選定。例如,於厚度為1mm左右之反射器之情形時,通常可以250~3000kV左右之加速電壓使所使用之交聯處理劑交聯並使其硬化。再者,於照射電子束時,加速電壓越高則透過能力越增加,故而於使用因電子束而劣化之基材作為基材之情形時,以電子束之透過深度與成形體之厚度實質上變得相等之方式來選定加速電壓,藉此可抑制向成形體照射多餘之電子束,可將因過多之電子束引起之成形體之劣化抑制在最小限度。又,照射電子束時之吸收劑量係根據樹脂組成物之組成而適當地設定,但較佳為成形體中之交聯密度飽和之量,照射劑量較佳為50~600kGy。 The accelerating voltage of the electron beam can be appropriately selected depending on the size of the resin composition for the reflector or the thickness of the reflector after molding. For example, in the case of a reflector having a thickness of about 1 mm, the crosslinking treatment agent to be used can be crosslinked and hardened by an acceleration voltage of about 250 to 3000 kV. Further, when the electron beam is irradiated, the higher the acceleration voltage is, the more the transmission ability is increased. Therefore, when the substrate which is deteriorated by the electron beam is used as the substrate, the depth of penetration of the electron beam and the thickness of the molded body are substantially By selecting the accelerating voltage in such a manner as to be equal, it is possible to suppress the irradiation of the excess electron beam to the molded body, and to minimize the deterioration of the molded body due to the excessive electron beam. Further, the absorbed dose when irradiating the electron beam is appropriately set depending on the composition of the resin composition, but it is preferably such that the crosslinking density in the molded body is saturated, and the irradiation dose is preferably 50 to 600 kGy.

進而,作為電子束源,並無特別限制,例如可使用Cockcroft Walton型、Vande Graft型、共振變壓器型、絕緣芯變壓器型、或者直線型、高頻高壓型、高頻型等各種電子束加速器。 Further, the electron beam source is not particularly limited, and for example, various electron beam accelerators such as a Cockcroft Walton type, a Vande Graft type, a resonant transformer type, an insulated core transformer type, or a linear type, a high frequency high voltage type, and a high frequency type can be used.

[3.附反射器之引線框架] [3. Lead frame with reflector]

本發明之實施形態之附反射器之引線框架係具備具有上述光反射面之反射器者,該光反射面係由含有上述樹脂、與含白色顏料及纖維狀填料之 無機填料的樹脂組成物成形而成,該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA法之熱重量/示差熱同步分析裝置測定該反射器之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70質量%以上且90質量%以下。 A lead frame with a reflector according to an embodiment of the present invention includes a reflector having the light reflecting surface, and the light reflecting surface is formed of a resin composition containing the resin and an inorganic filler containing a white pigment and a fibrous filler. The fibrous filler has a radial cross-sectional area of 1 μm 2 or more and 100 μm 2 or less, and after measuring the mass of the reflector before heating by using a thermogravimetric/differential thermal synchronous analyzer according to the TG-DTA method, After raising the temperature to 600 ° C at 10 ° C / min in an air atmosphere, the ash content remaining at 600 ° C for 30 minutes is 70% by mass or more and 90% by mass or less based on the total mass of the reflector before heating. .

本實施形態之附反射器之引線框架可藉由如下方式製造:於引線框架上藉由射出成形而將上述反射器用樹脂組成物成形為所期望之反射器形狀。 The lead frame with a reflector according to the present embodiment can be manufactured by molding the resin composition for a reflector into a desired reflector shape by injection molding on a lead frame.

此處,所謂引線框架係指用以載置反射器之基板。引線框架只要為可於半導體發光裝置之領域內用作基板者,則均可使用。作為引線框架之材料,例如可列舉由氧化鋁、氮化鋁、富鋁紅柱石、玻璃等燒結體構成之陶瓷等。除此之外,亦可列舉聚醯亞胺樹脂等具有可撓性之樹脂材料等。特別是,將由金屬形成之反射器用基板稱為引線框架。再者,形成於引線框架之端子部等之形狀亦可藉由半蝕刻而形成。 Here, the lead frame means a substrate on which a reflector is placed. The lead frame can be used as long as it can be used as a substrate in the field of semiconductor light-emitting devices. Examples of the material of the lead frame include ceramics made of a sintered body such as alumina, aluminum nitride, mullite, or glass. In addition, a flexible resin material such as a polyimide resin may be mentioned. In particular, a substrate for a reflector formed of a metal is referred to as a lead frame. Further, the shape of the terminal portion or the like formed in the lead frame may be formed by half etching.

作為形成反射器用基板之金屬材料,可使用鋁、銅及銅之合金。又,為了提高反射率,亦可藉由銀等反射率較高之貴金屬進行鍍敷。 As the metal material forming the substrate for the reflector, an alloy of aluminum, copper, and copper can be used. Further, in order to increase the reflectance, plating may be performed by a noble metal having a high reflectance such as silver.

又,本實施形態之附反射器之引線框架之厚度較佳為0.1mm以上且3.0mm以下。 Further, the thickness of the lead frame with a reflector of the present embodiment is preferably 0.1 mm or more and 3.0 mm or less.

[4.半導體發光裝置] [4. Semiconductor light-emitting device]

將本發明之實施形態之半導體發光裝置例示於圖1。本實施形態之半導體發光裝置係於基板14上具有光半導體元件10、及反射器12,該反射器12設置於該光半導體元件10之周圍,且具有使來自光半導體元件10之光 向特定方向反射之光反射面。光半導體元件10較佳為LED元件或LED封裝體。於半導體發光裝置中,反射器12相當於上述反射器,光反射面之至少一部分(於圖1之情形時為全部)以由上述反射器用樹脂組成物所構成之成形體構成。 A semiconductor light-emitting device according to an embodiment of the present invention is illustrated in Fig. 1 . The semiconductor light-emitting device of the present embodiment has an optical semiconductor element 10 and a reflector 12 on a substrate 14, and the reflector 12 is provided around the optical semiconductor element 10 and has light from the optical semiconductor element 10. A light reflecting surface that is reflected in a specific direction. The optical semiconductor component 10 is preferably an LED component or an LED package. In the semiconductor light-emitting device, the reflector 12 corresponds to the reflector, and at least a part of the light-reflecting surface (in the case of FIG. 1) is formed of a molded body composed of the resin composition for the reflector.

光半導體元件10係具有藉由n型及p型披覆層夾持釋出放射光(通常,於白色光LED中為UV或藍色光)之例如由AlGaAs、AlGaInP、GaP或GaN所構成之活性層之雙異質結構的半導體晶片(發光體),例如設為一邊之長度為0.5mm左右之六面體之形狀。而且,於打線接合構裝之形態之情形時,經由引線16而連接於未圖示之電極(連接端子)。 The optical semiconductor element 10 has an activity of, for example, AlGaAs, AlGaInP, GaP or GaN, which is carried out by n-type and p-type cladding layers to release emitted light (generally, UV or blue light in a white light LED). The semiconductor wafer (light-emitting body) having a double heterostructure of a layer has a shape of a hexahedron having a length of about 0.5 mm on one side. Further, in the case of the wire bonding structure, it is connected to an electrode (connection terminal) (not shown) via the lead wire 16.

反射器12之形狀係依據透鏡18之端部(接合部)之形狀,通常為角形、圓形、橢圓形等筒狀或環狀。於圖1之概略剖面圖中,反射器12為筒狀體(環狀體),反射器12之所有端面接觸固定於基板14之表面。 The shape of the reflector 12 depends on the shape of the end portion (joining portion) of the lens 18, and is generally cylindrical or circular, such as an angular shape, a circular shape, or an elliptical shape. In the schematic cross-sectional view of FIG. 1, the reflector 12 is a cylindrical body (annular body), and all end faces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.

再者,為了提高來自光半導體元件10之光之指向性,反射器12之內表面亦可向上方擴展成錐狀(參照圖1)。 Further, in order to improve the directivity of light from the optical semiconductor element 10, the inner surface of the reflector 12 may be expanded upward into a tapered shape (see Fig. 1).

又,於將透鏡18側之端部加工成與該透鏡18之形狀對應之形狀之情形時,反射器12亦可作為透鏡固持器而發揮功能。 Further, when the end portion on the lens 18 side is processed into a shape corresponding to the shape of the lens 18, the reflector 12 can also function as a lens holder.

如圖2所示,反射器12亦可僅將光反射面側設為由本發明之樹脂組成物所構成之光反射層12b。於該情形時,就使熱阻變低等觀點而言,光反射層12b之厚度較佳為設為500μm以下,更佳為設為300μm以下。形成光反射層12b之構件12a可由公知之耐熱性樹脂構成。 As shown in Fig. 2, the reflector 12 may have only the light reflecting surface side as the light reflecting layer 12b composed of the resin composition of the present invention. In this case, the thickness of the light-reflecting layer 12b is preferably 500 μm or less, and more preferably 300 μm or less from the viewpoint of lowering the thermal resistance. The member 12a forming the light reflection layer 12b may be composed of a known heat resistant resin.

如上所述,於反射器12上設置有透鏡18,其通常為樹脂製,亦存在根據目的、用途等而採用各種結構並著色之情形。 As described above, the reflector 12 is provided with a lens 18 which is usually made of a resin, and which has various structures and colors depending on the purpose, use, and the like.

由基板14、反射器12及透鏡18形成之空間部可為透明密封部,亦可視需要為空隙部。該空間部通常為填充有賦予透光性及絕緣性之材料等之透明密封部,於打線接合構裝中,可防止因如下情形發生之電性不良:因與引線16直接接觸而施加之力、及間接地施加之振動、衝擊等而引線16自與光半導體元件10之連接部及/或與電極之連接部脫離、切斷、或短路。又,同時可保護光半導體元件10免受濕氣、灰塵等之影響,跨及長期間維持可靠性。 The space formed by the substrate 14, the reflector 12, and the lens 18 may be a transparent sealing portion, and may be a void portion as needed. The space portion is usually a transparent sealing portion filled with a material that imparts light transmissivity and insulation, and in the wire bonding structure, electrical defects due to the following conditions can be prevented: force applied by direct contact with the lead wires 16 And the indirect indirect application of vibration, impact, etc., and the lead wire 16 is separated, cut, or short-circuited from the connection portion with the optical semiconductor element 10 and/or the connection portion with the electrode. Further, at the same time, the optical semiconductor element 10 can be protected from moisture, dust, and the like, and reliability can be maintained over a long period of time.

作為賦予該透光性及絕緣性之材料(透明密封劑組成物),通常可列舉聚矽氧樹脂、環氧聚矽氧樹脂、環氧系樹脂、丙烯酸系樹脂、聚醯亞胺系樹脂、聚碳酸酯樹脂等。於該等中,就耐熱性、耐候性、低收縮性及耐變色性之觀點而言,較佳為聚矽氧樹脂。 Examples of the material (transparent sealant composition) that imparts the light transmissivity and the insulating property include a polyoxymethylene resin, an epoxy polyoxyn resin, an epoxy resin, an acrylic resin, and a polyimide resin. Polycarbonate resin, etc. Among these, a polyoxyxylene resin is preferable from the viewpoint of heat resistance, weather resistance, low shrinkage, and discoloration resistance.

以下,對圖1所示之半導體發光裝置之製造方法之一例進行說明。 Hereinafter, an example of a method of manufacturing the semiconductor light-emitting device shown in FIG. 1 will be described.

首先,使用上述本發明之實施形態之反射材樹脂組成物,藉由使用具備特定形狀之空腔空間之模具的轉移成形、壓縮成形、射出成形等,而於基板14上成形為特定形狀之反射器12。由於將基板放入至模具並於其上成形樹脂,故而亦稱為注塑成形。此後,藉由接著劑或接合構件而將另外準備之光半導體元件10及電極固定至基板14,藉由引線16而將LED元件與電極連接。 First, the reflective material resin composition according to the embodiment of the present invention is formed into a specific shape reflection on the substrate 14 by transfer molding, compression molding, injection molding, or the like using a mold having a cavity space having a specific shape. 12 Since the substrate is placed in a mold and a resin is formed thereon, it is also referred to as injection molding. Thereafter, the separately prepared optical semiconductor element 10 and the electrode are fixed to the substrate 14 by an adhesive or a bonding member, and the LED element is connected to the electrode by the lead 16.

其次,向由基板14及反射器12形成之凹部注入含有聚矽氧樹脂等之透明密封劑組成物,藉由加熱、乾燥等使其硬化而製成透明密封部。此後,於透明密封部上配設透鏡18而獲得圖1所示之半導體發光裝置。 Then, a transparent sealant composition containing a polyoxymethylene resin or the like is injected into the concave portion formed by the substrate 14 and the reflector 12, and is cured by heating, drying, or the like to form a transparent sealing portion. Thereafter, the lens 18 is disposed on the transparent sealing portion to obtain the semiconductor light emitting device shown in FIG.

再者,亦可於透明密封劑組成物未硬化之狀態下載置透鏡18後,使組成物硬化。 Further, the lens 18 may be removed after the transparent sealant composition is not cured, and the composition may be cured.

本實施形態之反射器用樹脂組成物因於成形該反射器用樹脂組成物而成之成形體中優異之密接性而可獲得改善密封性、進而改善半導體元件之壽命之效果,故而可較佳地使用於厚度為3.0mm以下、較佳為1.0mm以下、更佳為0.8mm以下之附反射器之引線框架、或薄型半導體發光裝置封裝體用反射器之製造中。 The resin composition for a reflector of the present embodiment can be preferably used because it has excellent adhesion to a molded article obtained by molding the resin composition for a reflector, thereby improving the sealing property and improving the life of the semiconductor device. In the manufacture of a lead frame with a reflector having a thickness of 3.0 mm or less, preferably 1.0 mm or less, more preferably 0.8 mm or less, or a reflector for a thin semiconductor light-emitting device package.

[實施例] [Examples]

使用實施例,詳細地對本發明之實施形態之反射器進行說明。本發明並不限定於該等實施例。 The reflector of the embodiment of the present invention will be described in detail using an embodiment. The invention is not limited to the embodiments.

[反射器用樹脂組成物] [Resin composition for reflector]

藉由下述方法製作實施例及比較例之反射器用樹脂組成物,對成形性及灰分量進行評價。將結果示於第1表。 The resin composition for a reflector of the examples and the comparative examples was produced by the following method, and the moldability and ash content were evaluated. The results are shown in the first table.

<反射器用樹脂組成物之製作> <Production of Resin Composition for Reflector>

根據第1表所示之調配配方,使用擠出機(日本Placon股份有限公司MAX30:模嘴直徑為3.0mm)及造粒機(東洋精機製作所股份有限公司MPETC1)混合下述各種材料而獲得反射器用樹脂組成物。 According to the blending formula shown in Table 1, an extruder (Japan Placon Co., Ltd. MAX30: die tip diameter: 3.0 mm) and a granulator (Toyo Seiki Co., Ltd. MPETC1) were mixed to obtain reflections. A resin composition for the device.

‧聚烯烴樹脂…聚甲基戊烯樹脂、重量平均分子量=497,000) ‧Polyolefin resin...polymethylpentene resin, weight average molecular weight = 497,000)

‧白色顏料…氧化鈦粒子:平均粒徑為0.21μm ‧White pigment...Titanium oxide particles: average particle size is 0.21μm

‧纖維狀填料1…玻璃纖維:PF70E-001(日東紡股份有限公司製造,平均纖維長度為62μm、平均截面積為104.2μm2、截面形狀為圓形之玻璃纖維) ‧Fibrous filler 1...glass fiber: PF70E-001 (manufactured by Nitto Bose Co., Ltd., glass fiber with an average fiber length of 62 μm and an average cross-sectional area of 104.2 μm 2 and a circular cross section)

‧纖維狀填料2…玻璃纖維:SS05DE-413SP(日東紡股份有限公司製造,平均纖維長度為65μm、平均截面積為41.6μm2、截面形狀為圓形之玻璃纖維) ‧Fibrous filler 2...glass fiber: SS05DE-413SP (made by Ridong Textile Co., Ltd., glass fiber with an average fiber length of 65 μm, an average cross-sectional area of 41.6 μm 2 , and a circular cross section)

‧纖維狀填料3…玻璃纖維:EFDE50-01(Central Glass Fiber股份有限公司製造,平均纖維長度為55μm,平均截面積為33.2μm2) ‧Fibrous filler 3...glass fiber: EFDE50-01 (manufactured by Central Glass Fiber Co., Ltd., average fiber length 55 μm, average cross-sectional area 33.2 μm 2 )

‧纖維狀填料4…玻璃纖維:MF03JB1-20(Asahi Fiber Glass股份有限公司製造,平均纖維長度為34μm,平均截面積為81.7μm2) ‧Fibrous filler 4...glass fiber: MF03JB1-20 (manufactured by Asahi Fiber Glass Co., Ltd., average fiber length 34 μm, average cross-sectional area 81.7 μm 2 )

‧纖維狀填料5…玻璃纖維:MF03JB1-20(Asahi Fiber Glass股份有限公司製造,平均纖維長度為71μm,平均截面積為81.7μm2) ‧Fibrous filler 5...glass fiber: MF03JB1-20 (manufactured by Asahi Fiber Glass Co., Ltd., average fiber length 71 μm, average cross-sectional area 81.7 μm 2 )

‧交聯處理劑…異氰尿酸三烯丙酯 ‧ cross-linking treatment agent... triallyl isocyanurate

‧矽烷偶合劑…己基三甲氧基矽烷 ‧ decane coupling agent... hexyl trimethoxy decane

‧抗氧化劑1…IRGANOX1010(BASF Japan股份有限公司製造) ‧Antioxidant 1...IRGANOX1010 (manufactured by BASF Japan Co., Ltd.)

‧抗氧化劑2…雙(2,6-二三級丁基-4-甲基苯基)新戊四醇二亞磷酸酯 ‧Antioxidant 2...bis(2,6-ditributyl-4-methylphenyl)neopentitol diphosphite

‧脫模劑…硬脂酸鋅 ‧ release agent... zinc stearate

再者,於上述纖維狀填料1~5中,平均纖維長度及平均截面積係使用碳帶將混合至反射器樹脂組成物前之纖維狀填料固定至SEM觀察用試樣台,藉由SEM(日立高新技術股份有限公司S-4800)進行觀察而測定出之值。作為至少10個纖維狀填料之平均值而算出。 Further, in the fibrous fillers 1 to 5, the average fiber length and the average cross-sectional area were fixed to the SEM observation sample stage by using a carbon ribbon to be mixed with the fibrous filler before the reflector resin composition, by SEM ( Hitachi High-Tech Co., Ltd. S-4800) The value measured by observation. Calculated as an average value of at least 10 fibrous fillers.

<顆粒製成> <Particle made>

獲得上述樹脂組成物之步驟係使用擠出機之螺桿進行混練,將於該步驟中穩定地獲得經顆粒化之樹脂組成物之情形設為合格,將施加至擠出機 之螺桿之負荷較大而在無法實現連續運轉之狀態下無法穩定地獲得經顆粒化之樹脂組成物之情形設為不合格。 The step of obtaining the above resin composition is carried out by using a screw of an extruder, and the granulated resin composition is stably obtained in this step, and is applied to the extruder. When the load of the screw is large and the granulated resin composition cannot be stably obtained in a state in which continuous operation cannot be achieved, it is considered to be unacceptable.

<成形性> <formability>

使用反射器用樹脂組成物,按照以下之條件製作附反射器之引線框架。 Using the resin composition for the reflector, a lead frame with a reflector was fabricated under the following conditions.

使用射出成形機Sodick TR40ER Sodick(預塑化(Pre-plasticizating)式),於鍍銀框架(厚度:250μm)成形樹脂組成物(厚度:700μm,外形尺寸:35mm×35mm,開口部:2.9mm×2.9mm)而獲得附反射器之引線框架。射出成形機條件設為料缸溫度:270℃、模具溫度:80℃、射出速度:100mm/sec、保壓力:80MPa、保壓時間:1sec、冷卻時間:8sec。 A resin composition (thickness: 700 μm, outer dimension: 35 mm × 35 mm, opening: 2.9 mm ×) was formed on a silver-plated frame (thickness: 250 μm) using an injection molding machine Sodick TR40ER Sodick (Pre-plastic Ziating). 2.9 mm) to obtain a lead frame with a reflector. The conditions of the injection molding machine were set to a cylinder temperature: 270 ° C, a mold temperature: 80 ° C, an injection speed: 100 mm/sec, a holding pressure: 80 MPa, a dwell time: 1 sec, and a cooling time: 8 sec.

於成形後,於在模具內未完全填充有反射器用樹脂組成物之情形時設為短路。又,使用顯微鏡計測附反射器之引線框架之開口部之毛邊,將最大寬度為100μm以上設為有毛邊之產生。將不符合任一情形之情形設為成形性良好。 After the molding, a short circuit was formed when the resin composition for the reflector was not completely filled in the mold. Moreover, the burrs of the opening of the lead frame with the reflector were measured with a microscope, and the maximum width was 100 μm or more, and burrs were generated. In the case where the case is not satisfied, the formability is good.

<灰分量> <ash component>

於使用根據TG-DTA法之熱重量/示差熱同步分析裝置測定反射器用樹脂組成物之加熱前之質量後,於鋁鍋中在大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱而測得殘留之灰分之重量,求出加熱後之質量相對於加熱前之質量之比率。 After measuring the mass of the resin composition for a reflector by a thermogravimetric/differential thermal synchronous analyzer according to the TG-DTA method, the temperature is raised to 600 ° C at 10 ° C / min in an aluminum atmosphere in an aluminum pan, at 600 The weight of the remaining ash was measured by heating at ° C for 30 minutes, and the ratio of the mass after heating to the mass before heating was determined.

[反射器用樹脂組成物之硬化物] [The cured product of the resin composition for the reflector]

藉由下述方法製作實施例及比較例之反射器用樹脂組成物之硬化物,對負荷撓曲溫度進行評價。將結果示於第1表。 The cured product of the resin composition for a reflector of the examples and the comparative examples was produced by the following method, and the deflection temperature under load was evaluated. The results are shown in the first table.

<反射器用樹脂組成物硬化物之製作> <Production of cured resin composition for reflector>

使用射出成形機Sodick TR40ER Sodick(預塑化式),利用ASTM用啞鈴模具進行成形而獲得反射器用樹脂成形物。射出成形機條件設為料缸溫度:260℃、模具溫度:45℃、射出速度:15mm/sec、保壓力:55MPa、保壓時間:7sec、冷卻時間:15sec。以加速電壓800kV、照射劑量400kGy對該成形物照射電子束而使其硬化,從而獲得反射器用樹脂組成物硬化物。 The injection molded machine Sodick TR40ER Sodick (preplasticized type) was used to form a resin molded article for a reflector by ASTM using a dumbbell mold. The conditions of the injection molding machine were set to a cylinder temperature: 260 ° C, a mold temperature: 45 ° C, an injection speed: 15 mm/sec, a holding pressure: 55 MPa, a dwell time: 7 sec, and a cooling time: 15 sec. The molded product was irradiated with an electron beam at an acceleration voltage of 800 kV and an irradiation dose of 400 kGy to be cured, thereby obtaining a cured resin composition for a reflector.

<熱變形溫度> <heat distortion temperature>

針對供試體,依據ASTM D648,將達到規定撓曲量之溫度設為負荷撓曲溫度(熱變形溫度)。 For the test piece, the temperature at which the predetermined amount of deflection is reached is set as the load deflection temperature (heat distortion temperature) in accordance with ASTM D648.

[附反射器之引線框架] [Lead frame with reflector]

藉由下述方法製作實施例及比較例之附反射器之引線框架,對密接度、反射率、及耐久性A進行評價。將結果示於第1表。 The lead frames with reflectors of the examples and the comparative examples were produced by the following methods, and the adhesion, reflectance, and durability A were evaluated. The results are shown in the first table.

<附反射器之引線框架之製作> <Production of Lead Frame with Reflector>

以下之評價係成形以與使用於上述成形性之評價者相同之條件來製作之反射器用樹脂組成物,以加速電壓800kV、照射劑量400kGy照射電子束而使其硬化,從而獲得附反射器之引線框架。 In the following evaluation, a resin composition for a reflector which was produced under the same conditions as those used for the above-mentioned moldability evaluation was irradiated with an electron beam at an acceleration voltage of 800 kV and an irradiation dose of 400 kGy to obtain a lead wire with a reflector. frame.

<密接度> <tightness>

藉由紅液滲透探傷(red check)試驗測得附反射器之引線框架之各供試體與基板的密接度,判定是否合格。即,向反射器之空腔滴加0.8μL之紅色墨水(PILOT CORPORATION股份有限公司製造之「INK30R」),利用50倍之光學顯微鏡觀察經過6小時後之墨水向背面之滲透情況。評價基準如下。 The adhesion of each test piece to the substrate of the lead frame with the reflector was measured by a red liquid penetration test to determine whether it was acceptable. Specifically, 0.8 μL of red ink ("INK30R" manufactured by PILOT CORPORATION) was dropped into the cavity of the reflector, and the penetration of the ink to the back side after 6 hours was observed by a 50-fold optical microscope. The evaluation criteria are as follows.

將於經過6小時後亦未觀察到滲透之情形設為合格。 No penetration was observed to be acceptable after 6 hours.

將於經過6小時前觀察到滲透之情形設為不合格。 The situation of penetration observed after 6 hours was set as unacceptable.

<反射率> <reflectance>

使用反射率測定裝置MCPD9800(大塚電子股份有限公司製造)測得所獲得之附反射器之引線框架之供試體於波長230~780nm下之光反射率。利用波長450nm之反射率進行比較。 The light reflectance of the obtained lead frame of the lead frame of the obtained reflector at a wavelength of 230 to 780 nm was measured using a reflectance measuring device MCPD9800 (manufactured by Otsuka Electronics Co., Ltd.). The comparison was made using a reflectance at a wavelength of 450 nm.

<耐久性A> <Durability A>

測定將附反射器之引線框架之供試體於200℃放置45小時後之反射率。於測定反射率時,使用上述反射率測定裝置,以相同之條件進行測定。利用波長450nm之反射率進行比較。 The reflectance of the test piece of the lead frame to which the reflector was attached was measured at 200 ° C for 45 hours. When the reflectance was measured, the measurement was carried out under the same conditions using the above-described reflectance measuring device. The comparison was made using a reflectance at a wavelength of 450 nm.

[發光裝置] [Lighting device]

使用實施例及比較例之附反射器之引線框架製作發光裝置,對初始光束、玻璃纖維之直徑進行評價。將結果示於第1表。 The light-emitting device was fabricated using the lead frames with reflectors of the examples and the comparative examples, and the diameters of the initial light beam and the glass fibers were evaluated. The results are shown in the first table.

將根據第1表所示之調配配方製作之反射器用樹脂組成物成形為反射器形狀,以加速電壓800kV、照射劑量400kGy對該成形體照射電子束而使其硬化。於硬化後,獲得附反射器之引線框架。藉由接著劑將所獲得之附反射器之引線框架與另外準備之LED元件及電極固定至基板上,藉由引線將LED元件與電極連接後,進行切斷並單片化而獲得半導體發光裝置(LED封裝體)。於配線基板上設置焊料,於該焊料上載置該半導體發光裝置,藉由迴焊爐加熱至240℃而使焊料熔融,從而將半導體發光裝置構裝於配線基板上。 The resin composition for a reflector prepared according to the formulation shown in Table 1 was molded into a reflector shape, and the molded body was irradiated with an electron beam at an acceleration voltage of 800 kV and an irradiation dose of 400 kGy to be cured. After hardening, a lead frame with a reflector is obtained. The obtained lead frame of the reflector and the separately prepared LED element and electrode are fixed to the substrate by an adhesive, and the LED element is connected to the electrode by a lead, and then cut and singulated to obtain a semiconductor light-emitting device. (LED package). Solder is placed on the wiring board, and the semiconductor light-emitting device is placed on the solder, and the solder is melted by heating in a reflow furnace to 240 ° C to bond the semiconductor light-emitting device to the wiring board.

<初始光束> <initial beam>

藉由瞬間多測光系統(廣動態範圍型)MCPD-9800(大塚電子股份有 限公司製造)測定以定電流200mA發光時之光束並設為初始光束。 With the instantaneous multi-metering system (wide dynamic range type) MCPD-9800 (Otsuka Electronics Co., Ltd. has Co., Ltd. manufactures a light beam that emits light at a constant current of 200 mA and sets it as an initial light beam.

<纖維狀填料之截面積> <Cross-sectional area of fibrous filler>

如下所述般測得纖維狀填料之截面積。 The cross-sectional area of the fibrous filler was measured as described below.

破斷半導體發光裝置之反射器,藉由SEM(日立高新技術股份有限公司S-4800)觀察其破斷面。於將破斷面大致平行地固定至金屬製之試樣台後,以倍率2500倍自破斷面之垂直方向進行觀察。 The reflector of the semiconductor light-emitting device was broken, and the fracture surface was observed by SEM (Hitachi High-Tech Co., Ltd. S-4800). After the fractured section was fixed substantially parallel to the sample stage made of metal, it was observed at a magnification of 2,500 times from the vertical direction of the fractured section.

於所獲得之SEM圖像中,測得呈現於反射器之截面之纖維狀填料之徑長。於填料之截面為橢圓形狀之情形時,測得該橢圓之長徑及短徑,將長徑與短徑之比為0.8以上且1.2以下者設為對象。 In the obtained SEM image, the diameter of the fibrous filler present in the cross section of the reflector was measured. When the cross section of the filler is an elliptical shape, the long diameter and the short diameter of the ellipse are measured, and the ratio of the long diameter to the short diameter is 0.8 or more and 1.2 or less.

於根據藉由測定而獲得之徑長算出纖維狀填料之截面積時,徑長係測定至有效數字3位數為止。又,截面積係作為纖維狀填料之截面中自截面積較小者起測定總數之50%者之平均值而算出。以可獲得至少10個截面之平均值之方式進行取樣。 When the cross-sectional area of the fibrous filler was calculated from the diameter obtained by the measurement, the diameter was measured up to three digits of the effective number. Further, the cross-sectional area is calculated as an average value of 50% of the total number of measurements in the cross section of the fibrous filler from the smaller cross-sectional area. Sampling was performed in such a way that an average of at least 10 sections was obtained.

即,若測定總數為20個,則算出自截面積較小者起10個之平均值。將算出後之數值之第3位數四捨五入而設為截面積之值。 In other words, when the total number of measurements is 20, the average value of 10 from the smaller cross-sectional area is calculated. The third digit of the calculated value is rounded off to the value of the cross-sectional area.

如第1表所示可知,使用根據實施例1-4之調配配方製作之反射器用樹脂組成物者可不破壞發光裝置之製成中所需之特性而改善密接度。特別是,纖維狀填料之截面積之尺寸越大者,越顯示出良好之反射率。於使用纖維狀填料之截面積為81.7μm2者之情形時,與比較例者相比,反射率及耐久性A之任一特性均可顯著提高。 As shown in the first table, it is understood that the resin composition for a reflector produced by using the formulation of Examples 1-4 can improve the adhesion without deteriorating the properties required for the production of the light-emitting device. In particular, the larger the cross-sectional area of the fibrous filler, the better the reflectance is exhibited. When the cross-sectional area of the fibrous filler was 81.7 μm 2 , any of the reflectance and the durability A could be remarkably improved as compared with the comparative example.

灰分量為70%以下之比較例3、比較例4、比較例5之耐久性A之惡化明顯,向發光裝置之使用欠佳。另一方面,比較例6無法獲得使用於成形中之樹脂組成物,因此無法用作反射器樹脂組成物。 The deterioration of the durability A of Comparative Example 3, Comparative Example 4, and Comparative Example 5 in which the ash content was 70% or less was remarkable, and the use to the light-emitting device was unsatisfactory. On the other hand, in Comparative Example 6, the resin composition used in the molding was not obtained, and thus it was not possible to use it as a reflector resin composition.

Claims (19)

一種反射器,具有藉由樹脂組成物成形而成之光反射面,該樹脂組成物含有樹脂、與含白色顏料及纖維狀填料的無機填料,該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA法之熱重量/示差熱同步分析裝置測得該反射器之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70質量%以上且90質量%以下。 A reflector having a light reflecting surface formed by a resin composition containing a resin and an inorganic filler containing a white pigment and a fibrous filler, wherein the fibrous filler has a radial cross-sectional area of 1 μm 2 Above 100 μm 2 or less, after measuring the mass of the reflector before heating by using a thermogravimetric/differential thermal synchronous analyzer according to the TG-DTA method, the temperature is raised to 600 ° C at 10 ° C /min in an atmospheric environment. The ash component remaining after heating at 600 ° C for 30 minutes is 70% by mass or more and 90% by mass or less based on the total mass of the reflector before heating. 如申請專利範圍第1項之反射器,其中,上述纖維狀填料之徑向之截面積為30μm2以上且85μm2以下。 The reflector according to claim 1, wherein the fibrous filler has a radial cross-sectional area of 30 μm 2 or more and 85 μm 2 or less. 如申請專利範圍第1或2項之反射器,其中,上述纖維狀填料為含有60質量%以上之二氧化矽的玻璃纖維。 The reflector according to claim 1 or 2, wherein the fibrous filler is a glass fiber containing 60% by mass or more of ceria. 如申請專利範圍第1至3項中任一項之反射器,其中,上述灰分量以加熱前之反射器之總質量為基準,為72質量%以上且88質量%以下。 The reflector according to any one of claims 1 to 3, wherein the ash component is 72% by mass or more and 88% by mass or less based on the total mass of the reflector before heating. 如申請專利範圍第1至4項中任一項之反射器,其中,上述白色顏料之含量相對於上述樹脂100質量份為超過200質量份且500質量份以下。 The reflector according to any one of claims 1 to 4, wherein the content of the white pigment is more than 200 parts by mass and not more than 500 parts by mass based on 100 parts by mass of the resin. 如申請專利範圍第1至4項中任一項之反射器,其中,上述白色顏料之含量相對於上述樹脂100質量份為300質量份以上且480質量份以下。 The reflector according to any one of the above-mentioned claims, wherein the content of the white pigment is 300 parts by mass or more and 480 parts by mass or less based on 100 parts by mass of the resin. 如申請專利範圍第1至6項中任一項之反射器,其中,上述樹脂為聚烯烴樹脂。 The reflector according to any one of claims 1 to 6, wherein the resin is a polyolefin resin. 如申請專利範圍第7項之反射器,其中,上述聚烯烴樹脂選自聚乙烯、聚丙烯、含環狀結構之聚乙烯、含環狀結構之聚丙烯、及聚甲基戊烯中之至少1種。 The reflector of claim 7, wherein the polyolefin resin is at least selected from the group consisting of polyethylene, polypropylene, polyethylene having a cyclic structure, polypropylene having a cyclic structure, and polymethylpentene. 1 species. 如申請專利範圍第1至8項中任一項之反射器,其中,上述白色顏料為氧化鈦。 The reflector according to any one of claims 1 to 8, wherein the white pigment is titanium oxide. 如申請專利範圍第1至9項中任一項之反射器,其中,上述樹脂組成物進而含有交聯處理劑。 The reflector according to any one of claims 1 to 9, wherein the resin composition further contains a crosslinking treatment agent. 如申請專利範圍第10項之反射器,其係於將上述樹脂組成物成形為該反射器之形狀後,照射電子束而成。 A reflector according to claim 10, wherein the resin composition is formed into a shape of the reflector, and then irradiated with an electron beam. 一種附反射器之引線框架,具備具有光反射面之反射器,該光反射面由含有樹脂、與含白色顏料及纖維狀填料之無機填料的樹脂組成物成形而成,該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA法之熱重量/示差熱同步分析裝置測得該反射器之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70質量%以上且90質量%以下。 A lead frame with a reflector, comprising a reflector having a light reflecting surface formed by a resin composition containing a resin and an inorganic filler containing a white pigment and a fibrous filler, the diameter of the fibrous filler The cross-sectional area of the direction is 1 μm 2 or more and 100 μm 2 or less, and the mass before heating of the reflector is measured using a thermogravimetric/differential thermal synchronous analyzer according to the TG-DTA method, and is 10 ° C/min in an atmosphere. After heating to 600 ° C, the ash content remaining after heating at 600 ° C for 30 minutes is 70% by mass or more and 90% by mass or less based on the total mass of the reflector before heating. 如申請專利範圍第12項之附反射器之引線框架,其厚度為0.1mm以上且3.0mm以下。 The lead frame with a reflector as disclosed in claim 12 has a thickness of 0.1 mm or more and 3.0 mm or less. 如申請專利範圍第12或13項之附反射器之引線框架,其中,上述樹脂為聚烯烴樹脂。 The lead frame with a reflector according to claim 12 or 13, wherein the resin is a polyolefin resin. 如申請專利範圍第14項之附反射器之引線框架,其中,上述聚烯烴樹 脂選自聚乙烯、聚丙烯、含環狀結構之聚乙烯、含環狀結構之聚丙烯、及聚甲基戊烯中之至少1種。 A lead frame with a reflector as disclosed in claim 14 wherein the polyolefin tree is The fat is at least one selected from the group consisting of polyethylene, polypropylene, polyethylene having a cyclic structure, polypropylene having a cyclic structure, and polymethylpentene. 一種半導體發光裝置,具備光半導體元件、設置於該光半導體元件之周圍且使來自該光半導體元件之光向特定方向反射的反射器、及基板,且該光半導體元件及該反射器配置於該基板上,該反射器為申請專利範圍第1至11項中任一項之反射器。 A semiconductor light-emitting device comprising: an optical semiconductor element; a reflector disposed around the optical semiconductor element and reflecting light from the optical semiconductor element in a specific direction; and a substrate, wherein the optical semiconductor element and the reflector are disposed The reflector is a reflector of any one of claims 1 to 11 on the substrate. 一種樹脂組成物,含有樹脂、與含白色顏料及纖維狀填料之無機填料,該纖維狀填料之徑向的截面積為1μm2以上且100μm2以下,於使用根據TG-DTA法之熱重量/示差熱同步分析裝置測得該樹脂組成物之加熱前之質量後,於大氣環境下以10℃/分鐘升溫至600℃後,於600℃進行30分鐘加熱從而殘留之灰分量,以加熱前之該反射器之總質量為基準,為70質量%以上且90質量%以下。 A resin composition comprising a resin and an inorganic filler containing a white pigment and a fibrous filler, wherein the fibrous filler has a radial cross-sectional area of 1 μm 2 or more and 100 μm 2 or less, using a thermal weight according to the TG-DTA method/ The differential thermal synchronization analyzer measures the mass of the resin composition before heating, and then raises the temperature to 600 ° C at 10 ° C / min in an atmospheric environment, and then heats at 600 ° C for 30 minutes to leave a residual ash component, before heating. The total mass of the reflector is 70% by mass or more and 90% by mass or less based on the total mass. 如申請專利範圍第17項之樹脂組成物,其中,上述樹脂為聚烯烴樹脂。 The resin composition of claim 17, wherein the resin is a polyolefin resin. 如申請專利範圍第18項之樹脂組成物,其中,上述聚烯烴樹脂選自聚乙烯、聚丙烯、含環狀結構之聚乙烯、含環狀結構之聚丙烯、及聚甲基戊烯中之至少1種。 The resin composition of claim 18, wherein the polyolefin resin is selected from the group consisting of polyethylene, polypropylene, polyethylene having a cyclic structure, polypropylene having a cyclic structure, and polymethylpentene. At least one.
TW104125078A 2014-08-01 2015-08-03 Reflector and resin composition TW201608743A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014157983 2014-08-01

Publications (1)

Publication Number Publication Date
TW201608743A true TW201608743A (en) 2016-03-01

Family

ID=55523696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104125078A TW201608743A (en) 2014-08-01 2015-08-03 Reflector and resin composition

Country Status (2)

Country Link
JP (1) JP2016036028A (en)
TW (1) TW201608743A (en)

Also Published As

Publication number Publication date
JP2016036028A (en) 2016-03-17

Similar Documents

Publication Publication Date Title
JP6277963B2 (en) Electron beam curable resin composition, resin frame for reflector, reflector, semiconductor light emitting device, and method for producing molded article
TWI644957B (en) Resin composition, reflector, lead frame with reflector, and semiconductor light emitting device
JP2016166285A (en) Resin composition for insert molding, molded article, reflector, substrate with reflector for mounting optical semiconductor element, and semiconductor light-emitting device
TW201638182A (en) Resin composition, reflector, lead frame provided with reflector, and semiconductor light-emitting apparatus
JP2016222761A (en) Resin composition, reflector, lead frame with reflector, semiconductor light emitting device, isocyanurate compound for crosslinking agent, and glycoluril compound for crosslinking agent
JP6277592B2 (en) Electron beam curable resin composition for reflector, resin frame for reflector, reflector, semiconductor light emitting device, method for producing molded article, and method for producing semiconductor light emitting device
WO2016117624A1 (en) Semiconductor light emitting device, resin composition for forming reflection body, and lead frame provided with reflector
TW201608743A (en) Reflector and resin composition
JP6102413B2 (en) Electron beam curable resin composition, resin frame for reflector, reflector, semiconductor light emitting device, and method for producing molded article
WO2016017818A1 (en) Reflector and resin composition
JP2017002296A (en) Resin composition, reflector, manufacturing method of reflector, substrate for mounting optical semiconductor element with reflector and semiconductor light-emitting device
JP2017079293A (en) Optical semiconductor element mounting substrate with reflector, semiconductor light-emitting device, reflector, and resin composition for forming reflector
JP6155930B2 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE COMPONENT AND METHOD FOR PRODUCING THE SAME, AND REFLECTOR, MANUFACTURING METHOD THEREFOR, AND REFLECTOR FORMING COMPOSITION
JP6155929B2 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE COMPONENT AND ITS MANUFACTURING METHOD, AND REFLECTOR AND MANUFACTURING METHOD THEREOF
JP6292130B2 (en) Electron beam curable resin composition, resin frame for reflector, reflector, semiconductor light emitting device, and method for producing molded article
JP6149457B2 (en) Optical semiconductor mounting substrate, semiconductor light emitting device, and manufacturing method of optical semiconductor mounting substrate
JP2015023099A (en) Method of manufacturing semiconductor light-emitting device, method of manufacturing molded body, electron beam curable resin composition, resin frame for reflector, and reflector
JP6094412B2 (en) Semiconductor light emitting device manufacturing method, molded body manufacturing method, electron beam curable resin composition, reflector resin frame, and reflector
JP6167603B2 (en) Electron beam curable resin composition, resin frame for reflector, reflector, semiconductor light emitting device, method for producing molded article, and method for producing semiconductor light emitting device
JP2016035010A (en) Resin composition, reflector, lead frame with reflector and semiconductor light-emitting device
TW201543723A (en) Semiconductor light-emitting device and optical-semiconductor-mounting substrate