JP6155929B2 - SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE COMPONENT AND ITS MANUFACTURING METHOD, AND REFLECTOR AND MANUFACTURING METHOD THEREOF - Google Patents

Description

  The present invention relates to a semiconductor light emitting device, a component for a semiconductor light emitting device, a manufacturing method thereof, a reflector, a manufacturing method thereof, and a composition for forming a reflector.

Optical semiconductor elements such as light emitting diodes (hereinafter also referred to as “LEDs”) are widely used as light sources such as indicator lamps. Such an optical semiconductor element is small, has a long life, and is excellent in power saving. Therefore, it is considered that it can greatly contribute to CO ₂ reduction as a measure for preventing global warming.

  In order to obtain high illuminance, a semiconductor light-emitting device using an optical semiconductor element as a light source is usually provided with a reflector around one or a plurality of optical semiconductor elements arranged on a substrate to emit light emitted by the optical semiconductor element. Reflected in a predetermined direction. Such a reflector is required to have good reflectivity and heat resistance due to heat generation of the optical semiconductor element. Further, since the warpage and dimensional change that occur in the reflector cause a decrease in the reflectivity of the reflector, it is required that the reflector does not undergo warpage or dimensional change.

  In response to such a requirement, Patent Document 1 discloses a thermosetting light reflecting resin composition containing an epoxy resin, a curing agent, a curing catalyst, an inorganic filler, a white pigment, an additive, and a release agent. The light which specified the surface free energy in the mold release surface of the molded product obtained by transfer molding the product and releasing it from the molding die, and the light diffuse reflectance at the light wavelength of 400 nm after curing of the resin composition A reflective resin composition, and an optical semiconductor element mounting substrate manufactured using the composition have been proposed. According to this technology, the thermosetting light reflecting resin composition is excellent in various properties such as optical properties and heat-resistant coloring properties required for a substrate for mounting an optical semiconductor element, and excellent in molding processability by a transfer molding method or the like. It is said that can be provided. In this document, fused spherical silica having a center particle size of 6 μm is used as the inorganic filler.

  Patent Document 2 discloses a white thermosetting silicone resin composition containing a thermosetting organopolysiloxane, a white pigment, an inorganic filler (excluding a white pigment), a condensation catalyst, and a coupling agent having a specific structure. , And an optical semiconductor case manufactured using the composition have been proposed. According to this technology, it is said that a cured product that retains whiteness, heat resistance, and light resistance, is uniform, has little yellowing, and has a small amount of warping upon curing can be provided. In this document, spherical fused silica having an average particle size of 30 μm is used as the inorganic filler.

  Further, Patent Document 3 proposes a package molded body that enhances light reflection by coating a predetermined portion with a coating member containing a specific thermosetting resin and an inorganic member. According to this technique, it is said that it is possible to provide a package molded body that can improve the light resistance and heat yellowing of the package molded body without causing a decrease in the light output of the light emitting diode. In this document, glass fiber is used as a reinforcing material.

  Further, Patent Document 4 proposes a polymer composition specifically containing polyphthalamide, carbon black, titanium dioxide, glass fiber, and an antioxidant as a polymer composition used for a reflector of a light emitting diode. ing. According to this technique, the reflectance after heat aging of the polymer composition is better than that of a polymer composition not containing carbon black, and yellowing is also less likely. In this document, glass fibers having a length of 0.3 cm and 0.5 cm are used.

  Patent Document 5 discloses a white resin molded product obtained by irradiating a specific amount of ionizing radiation onto a molded product comprising a resin composition containing a fluororesin having a carbon-hydrogen bond and a predetermined amount of titanium oxide. LED reflectors have been proposed. According to this technology, the LED reflector has high heat deterioration resistance and light deterioration resistance that are not easily discolored even when exposed to a high temperature environment of 150 ° C. or higher for a long time, and is easy to process and excellent in productivity. It is said that a white resin molded article and an LED reflector having characteristics suitable as a material constituting the part can be provided. In this document, a glass fiber having a length of 3 mm is used as a reinforcing material.

  Patent Document 6 includes a thermoplastic resin, a filler, and a melt viscosity reducing agent, which is a polyfunctional alkyl compound containing a predetermined amount or a dimer acid-based thermoplastic resin containing a predetermined amount. A certain resin composition and a molded body comprising the same have been proposed. According to this technique, it is said that a resin composition excellent in melt fluidity at the time of processing and a molded body comprising the same can be provided.

JP 2009-149845 A JP 2009-221393 A JP 2005-136378 A JP-T-2006-503160 JP 2011-195709 A International Publication WO2010 / 084845

  In patent documents 1-6, spherical silica and glass fiber are contained in the resin composition as an inorganic filler or a reinforcing material. However, the spherical silica used in Patent Documents 1 and 2 has a low reinforcing effect, and the strength of the molded product formed from the resin composition may not be sufficient. In addition, the relatively long glass fiber used in Patent Documents 3 to 5, etc., jumps out to the surface of the molded body and inhibits light reflectivity, or breaks by mechanical mixing means used at the time of preparing the resin composition, The resin may deteriorate due to the generation of mechano radicals at the time of bending, and the durability may be lowered.

  The present invention has been made to solve the above-mentioned problems, and its object is to provide a semiconductor light emitting device having a reflector excellent in durability and strength, a component for a semiconductor light emitting device, and a method for manufacturing the same. There is to do. Furthermore, the objective of this invention is providing the reflector, its manufacturing method, and the composition for reflector formation.

  (1) A semiconductor light emitting device according to the present invention for solving the above-described problems includes a substrate, an optical semiconductor element, and a reflector that reflects light emitted from the optical semiconductor element, and the reflector is an electron. It contains at least a cured product of a linear curable resin, a white material, and a fibrous material, the average length of the fibrous material is in the range of 40 μm to 100 μm, and the fibrous material is the electron beam curable resin 100. It is contained within the range of 60 parts by mass or more and 200 parts by mass or less with respect to parts by mass.

  A method for manufacturing a semiconductor light-emitting device according to the present invention is a method for manufacturing a semiconductor light-emitting device having a substrate, an optical semiconductor element, and a reflector that reflects light emitted from the optical semiconductor element. Resin, white material, and fibrous material are included, the average length of the fibrous material is in the range of 40 μm or more and 100 μm or less, and the fibrous material is 60 with respect to 100 parts by mass of the electron beam curable resin. A step of injection-molding a composition for forming a reflector contained in a range of not less than 200 parts by mass and not more than 200 parts by mass, and a step of irradiating an electron beam before or after the injection-molding step and after the step. It is characterized by having.

  (2) A component for a semiconductor light-emitting device according to the present invention for solving the above-described problem has a substrate and a reflector that reflects light emitted from the optical semiconductor element, and the reflector is an electron beam curable resin. A cured material, a white material, and a fibrous material, the average length of the fibrous material is in the range of 40 μm or more and 100 μm or less, and the fibrous material is based on 100 parts by mass of the electron beam curable resin. It is contained within the range of 60 parts by mass or more and 200 parts by mass or less.

  A method for manufacturing a semiconductor light-emitting device component according to the present invention is a method for manufacturing a semiconductor light-emitting device component having a substrate and a reflector that reflects light emitted from an optical semiconductor element, the method comprising: It contains at least a white material and a fibrous material, the average length of the fibrous material is in the range of 40 μm to 100 μm, and the fibrous material is 60 parts by mass with respect to 100 parts by mass of the electron beam curable resin. It has the process of carrying out injection molding of the constituent for reflector formation contained within the above-mentioned range of 200 mass parts or less, and the process of irradiating with an electron beam before or after the above-mentioned injection molding process It is characterized by.

  (3) A reflector according to the present invention for solving the above problems includes at least a cured product of an electron beam curable resin, a white material, and a fibrous material, and the average length of the fibrous material is 40 μm or more and 100 μm. It is within the following ranges, and the fibrous material is contained within a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin.

  The reflector manufacturing method according to the present invention includes at least an electron beam curable resin, a white material, and a fibrous material, wherein the fibrous material has an average length in the range of 40 μm to 100 μm, and the fibrous material A step of injection-molding a composition for forming a reflector, the material of which is contained within a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin; And a step of irradiating an electron beam in one or both of the steps.

  (4) A composition for forming a reflector according to the present invention for solving the above problems includes at least an electron beam curable resin, a white material, and a fibrous material, and the average length of the fibrous material is 40 μm or more. It is within a range of 100 μm or less, and the fibrous material is contained within a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin.

  According to the semiconductor light emitting device and the manufacturing method thereof according to the present invention, a semiconductor light emitting device including a reflector excellent in durability, strength, and reflectivity can be provided. Furthermore, according to the reflector, the manufacturing method thereof, and the composition for forming a reflector according to the present invention, a reflector excellent in durability, strength, and reflectivity can be provided.

It is a schematic cross section which shows an example of the semiconductor light-emitting device concerning this invention. It is a schematic cross section which shows another example of the semiconductor light-emitting device concerning this invention. 3 is an enlarged photograph of the surface of the reflector obtained in Example 1. It is the photograph which expanded the surface of the reflector obtained by the comparative example 4.

  A semiconductor light-emitting device, a semiconductor light-emitting device component and a method for producing the same, a reflector, a method for producing the same, and a composition for forming a reflector will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment, A various form can be taken within the range of the summary.

[Semiconductor light emitting device]
As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 according to the present invention includes a substrate 14, an optical semiconductor element 10, and a reflector 12 that reflects light emitted from the optical semiconductor element 10. . The reflector 12 includes at least a cured product of an electron beam curable resin, a white material, and a fibrous material. The fibrous material has an average length in the range of 40 μm to 100 μm, and is contained in the range of 60 parts by mass to 200 parts by mass with respect to 100 parts by mass of the electron beam curable resin.

  In such a semiconductor light emitting device 1, the reflector 12 is a cured product of an electron beam curable resin (hereinafter simply referred to as “cured product of an electron beam curable resin”), a white material, and the above. Since at least the fibrous material is included, the cured product including the white material is reinforced with the fibrous material. In addition, the fibrous material having the above-described size can be filled in a hardened material, and the strength of the obtained reflector 12 can be increased. It is less likely to inhibit the reflectivity of. Furthermore, conventional long glass fibers are broken by mechanical mixing means during preparation of the composition for forming a reflector to generate mechano radicals, which tend to deteriorate the electron beam curable resin. Such a material is unlikely to generate such mechano radicals and can suppress the deterioration of the electron beam curable resin. Since the semiconductor light emitting device 1 includes the reflector 12 having excellent durability and strength and good reflectivity, defects such as cracks do not occur, and the manufacturing yield and long-term durability of the product are excellent.

  In addition, as described in the examples described later, the reflector 12 including a large amount of white material tends to be brittle. However, the reflector 12 includes the fibrous material having the above-described size. It has the feature that the skeleton of this can be made solid, the strength can be increased, and the brittleness can be reduced. Moreover, since the reflector 12 containing many white materials is hardened with an electron beam, it is desirable to irradiate the electron beam with a large absorbed dose such as 400 kGy at an accelerating voltage of 800 kV described in the examples described later. However, even when irradiated with a large absorbed dose, since it contains a large amount of white material, the degree of curing tends to be non-uniform between the vicinity of the surface and the inside, and differences in internal stress at each part are likely to occur. In the present invention, even if the internal stress is not uniform between the vicinity of the surface and the inside, by including the fibrous material, the framework of the reflector 12 is made firm and the strength of each part is increased to be relatively uniform. There is also a feature that can be made.

  Hereinafter, each configuration will be described in detail. The semiconductor light emitting device 1 is not particularly limited as long as it includes the substrate 14, the optical semiconductor element 10, and the reflector 12. For example, the semiconductor light emitting device 1 may be a shell-type semiconductor light emitting device, or a surface-mounted COB: (Chip On Board) semiconductor light emitting device. In the following, a surface-mount type semiconductor light emitting device will be described as an example.

<Board>
The substrate 14 is not particularly limited, and various substrates can be used as long as they are used in the field of the semiconductor light emitting device 1. The substrate 14 is also referred to as a lead frame or a lead electrode, and functions as a conductor (lead electrode) for supplying power to the optical semiconductor element 10 mounted on the substrate 14 or as a heat sink. The arrangement of the substrate 14 and the optical semiconductor element 10 is not particularly limited. As shown in FIG. 1 and the like, both may be in direct contact with each other or may be electrically connected without being in direct contact with each other. Good.

  The material of the substrate 14 may be any of a metal substrate, a ceramic substrate, a plastic substrate, and the like, but usually a metal substrate is preferably used. As a metal substrate, metals or alloys, such as copper, iron, and aluminum, can be mentioned, for example. Such a metal or alloy can be preferably used since it exhibits high thermal conductivity. Further, the surface may be plated with silver, gold, aluminum or the like having good electrical conductivity and thermal conductivity. Examples of the ceramic substrate include aluminum oxide, aluminum nitride, mullite (a compound of aluminum oxide and silicon dioxide), and ceramics such as glass. Moreover, as a plastic substrate, the resin material etc. which have flexibility, such as a polyimide resin, can be mentioned, for example. It is desirable that a ceramic substrate or a plastic substrate is provided with a metal layer on the surface thereof that can be electrically connected to the optical semiconductor element 10 and supply electric power to the optical semiconductor element 10. As such a metal layer, copper, silver, gold, aluminum or the like having both electrical conductivity and thermal conductivity is preferable. Since the substrate 14 made of such a material can apply a large current to the optical semiconductor element 10 for a long time, the output can be improved and the semiconductor light emitting device 1 with high reliability can be obtained.

  The substrate 14 may be provided with a concave portion at the center or a wall portion at the periphery so that the optical semiconductor element 10 can be easily placed, or provided with a convex portion for enhancing the heat sink function. It may be. Further, the thickness of the substrate 14 is not particularly limited, and can be set as appropriate according to the constituent material, the structural form, and the like.

<Optical semiconductor element>
The optical semiconductor element 10 is provided on the substrate 14 as shown in FIGS. The optical semiconductor element 10 may be any semiconductor element that emits light of an arbitrary wavelength, and the type thereof is not particularly limited. The emission wavelength is not particularly limited, but may be, for example, ultraviolet light of 230 nm to 400 nm, light in the range from ultraviolet light to visible light, or visible light.

  As an example of the optical semiconductor element 10, there may be mentioned one having a double heterostructure in which an active layer made of AlGaAs, AlGaInP, GaP or GaN is sandwiched between n-type and p-type cladding layers. Examples of such an optical semiconductor element 10 include an ultraviolet light-emitting LED having a hexahedral shape with a side length of about 0.5 mm.

  There is also no particular limitation on the colored light of the optical semiconductor element 10, and it may be white or a color other than that. For example, a light emission color conversion member that converts red, green, and blue into the surface of the optical semiconductor element 10 can be provided, and the light converted into each color can be mixed into a white light emission color.

  In particular, when the optical semiconductor element 10 that emits ultraviolet light is used, the sterilizing effect and the deodorizing effect can be imparted to the semiconductor light emitting device 1 using the ultraviolet light. In addition, by combining with various phosphors, for example, the above-described emission color conversion member, the obtained semiconductor light emitting device 1 can be used for illumination, a television, and the like, and the color rendering can be enhanced.

<Reflector>
The reflector 12 is provided on the substrate 14 as shown in FIGS. 1 and 2. The reflector 12 is an indispensable configuration included in the semiconductor light emitting device 1 according to the present invention, and plays a role of reflecting light emitted from the optical semiconductor element 10 in a predetermined direction, that is, on the light output side. Although the structure form for that is not specifically limited, Usually, as shown in FIG.1 and FIG.2, it has the surface which reflects light in a predetermined direction, and the surface is provided in the form inclined in the taper shape.

  The reflector 12 includes at least a cured product of an electron beam curable resin, a white material, and a fibrous material.

(Hardened product of electron beam curable resin)
The cured product of the electron beam curable resin may be a cured product obtained by irradiating an electron beam curable resin with an electron beam. As a curing mode, as described later, the reflector 12 may be formed by injection molding and then cured by irradiation with an electron beam, or the electron before the reflector 12 is formed by injection molding. The electron beam curable resin may be cured by irradiating an electron beam, or the electron beam curable resin before the reflector 12 is formed by injection molding may be irradiated with an electron beam to be semi-cured. It may be one obtained by irradiating an electron beam on a semi-cured electron beam curable resin and then curing it.

  The electron beam curable resin is not particularly limited. For example, olefin resin, vinyl chloride resin, styrene resin, vinyl acetate resin, tetrafluoroethylene resin, acrylonitrile styrene resin, acrylonitrile butadiene styrene resin, acrylic resin, amide resin, acetal resin, carbonate resin, modified polyphenylene ether resin, butylene terephthalate resin , Ethylene terephthalate resin, phenylene sulfide resin, tetrafluoroethylene resin, sulfone resin, ether sulfone resin, amorphous arylate resin, liquid crystal polymer, polyether ether ketone, thermoplastic polyimide, polyamideimide, etc. It can be used.

  Of these, olefin resins are preferably used. Examples of the olefin resin include a resin obtained by ring-opening metathesis polymerization of a norbornene derivative, or hydrogenation thereof, polyethylene, polypropylene, polymethylpentene, and the like. In particular, polymethylpentene is preferable.

  Polymethylpentene is preferably used because it has excellent heat resistance and can prevent discoloration of the reflector 12 due to heat generation from the optical semiconductor element 10 and can maintain the performance of the reflector 12 over a long period of time. be able to. Further, since polymethylpentene is excellent in moldability, there is also an advantage that the reflector 12 can be molded without generation of burrs. Thereby, it is possible to prevent the occurrence of an electrical failure of the semiconductor light emitting device 1 that may be caused by burrs. Furthermore, polymethylpentene is excellent also in the light transmittance of the wavelength of an ultraviolet region. Due to the synergistic effect of such polymethylpentene and a white material described later having ultraviolet light reflecting performance, the ultraviolet light emitted from the optical semiconductor element 10 can be effectively reflected to the light emitting part side, and the bactericidal effect and the extinction can be achieved. The odor effect and color rendering properties can be further enhanced. In addition, since polymethylpentene has a refractive index of 1.46, which is close to the refractive index of, for example, a silicon oxide material, even when they are mixed, inhibition of optical properties such as transmittance and reflectance can be suppressed.

  Polymethylpentene will be described in more detail. Examples of polymethylpentene include a homopolymer of 4-methylpentene-1 and a copolymer of 4-methylpentene-1 and other olefins. Examples of copolymers of 4-methylpentene-1 and other olefins include 4-methylpentene-1 and α-olefins such as ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 1-hexene, With α-olefins having 2 to 20 carbon atoms such as octene, 1-decene, 1-dodecene, 1-tetradecene, 1-octadecene, 1-eicosene, 3-methyl-1-butene, 3-methyl-1-pentene, etc. Mention may be made of copolymers. When using the copolymer of 4-methylpentene-1 and another olefin, it is preferable that the copolymer contains 90 mol% or more of 4-methyl-1-pentene.

  Among polymethylpentenes, a homopolymer of 4-methylpentene-1 can be preferably used. Among them, a homopolymer of 4-methylpentene-1 having a polymerization average molecular weight (Mw) of 1000 or more, particularly 5000 or more is preferable. According to these polymethylpentenes, the heat resistance of the reflector 12 can be further improved. In addition, the molecular weight of the homopolymer of 4-methylpentene-1 is a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography.

  As the polymethylpentene, a commercially available product can be used, and examples thereof include TPX (registered trademark) manufactured by Mitsui Chemicals.

  When polymethylpentene is used, a polymethylpentene having a three-dimensional network structure may be used. The reflector 12 containing polymethylpentene having a three-dimensional network structure is expected to further improve heat resistance and reflection performance. Moreover, it can also prevent that the white material which has the ultraviolet light reflective performance mentioned later from the reflector 12 falls off. The polymethylpentene having a three-dimensional network structure can be obtained, for example, by reacting an ultraviolet curing agent or an electron beam curing agent with polymethylpentene to crosslink the molecules of polymethylpentene. In addition, polymethylpentene having a three-dimensional network structure can be obtained by using a copolymer obtained by copolymerizing polymethylpentene and a monomer of an ultraviolet curing agent or an electron beam curing agent.

(Crosslinking agent)
When the heat resistance of the cured product of the electron beam curable resin is not sufficient, the crosslinking agent is included in the reflector forming composition together with the above-described electron beam curable resin as necessary.

  For example, when using an olefin resin having a high melting point of 232 ° C. such as the above-described polymethylpentene and having a decomposition temperature of about 300 ° C. without being decomposed even at a processing temperature of about 280 ° C. Since organic peroxides and photopolymerization initiators having high temperature characteristics generally do not exist so much, crosslinking with organic peroxides or crosslinking with ultraviolet light is difficult. In addition, even when an electron beam curable resin such as polymethylpentene is irradiated with an electron beam (for example, absorbed dose: 200 kGy), molecular chain breakage may proceed simultaneously with crosslinking. Therefore, effective crosslinking is unlikely to occur with polymethylpentene alone, but by containing a crosslinking treatment agent, a crosslinking reaction can be effectively caused by electron beam irradiation. For this reason, a specific crosslinking agent is contained in the electron beam curable resin, which is an olefin resin such as polymethylpentene, and irradiated with an electron beam, which is sufficient even in a heating process such as a reflow process. It can be set as the reflector formation composition which can exhibit heat resistance. Thereby, deformation of the reflector 12 due to melting of the electron beam curable resin can be prevented even for heat applied after the reflector 12 is molded.

  The crosslinking agent has a saturated or unsaturated ring structure, and at least one of the atoms forming at least one ring is an allyl group, a methallyl group, an allyl group via a linking group, and a linking group. It has a structure formed by bonding with any allylic substituent selected from the intervening methallyl group. In particular, it is preferable that at least two atoms among atoms forming one ring of the crosslinking agent are independently bonded to an allylic substituent. When the ring structure is a 6-membered ring, at least two of the atoms forming the ring are independently bonded to an allylic substituent, and one allylic substituent is bonded. It is preferable that another allylic substituent is bonded to the atom at the meta position with respect to the atom.

  By containing the crosslinking agent having such a structure, a composition for forming a reflector that exhibits good electron beam curability and has excellent heat resistance can be obtained. Examples of the saturated or unsaturated ring structure include a cyclo ring, a hetero ring, and an aromatic ring. The number of atoms forming the ring structure is preferably 3 to 12, more preferably 5 to 8, and still more preferably a 6-membered ring. Examples of the linking group possessed by the crosslinking agent include an ester bond, an ether bond, an alkylene group, and a (hetero) arylene group. Among the atoms forming the ring, atoms that are not bonded to the allylic substituent are in a state in which hydrogen, oxygen, nitrogen, or the like is bonded, or in a state in which various substituents are bonded.

  The molecular weight of the crosslinking agent is preferably 1000 or less, more preferably 500 or less, and even more preferably 300 or less. When the molecular weight is 1000 or less, it is possible to prevent the dispersibility in the electron beam curable resin from being lowered, and to cause an effective crosslinking reaction by electron beam irradiation. The number of ring structures is preferably 1 to 3, more preferably 1 or 2, and further preferably 1.

  The melting point of the crosslinking agent is preferably not higher than the melting point of the electron beam curable resin to be used, and is preferably 200 ° C. or lower, for example. The cross-linking agent as described above is excellent in fluidity at the time of processing, so the processing temperature of the electron beam curable resin is lowered to reduce the thermal load, friction at the time of processing, and the white material It is possible to increase the filling amount of inorganic components such as a fibrous material.

  Specific examples of the crosslinking agent include triallyl isocyanurate, methyl diallyl isocyanurate, diallyl monoglycidyl isocyanuric acid, monoallyl diglycidyl isocyanurate, trimethallyl isocyanurate, and the like. Further, diallyl esters of orthophthalic acid, diallyl esters of isophthalic acid, and the like can be given.

  The crosslinking agent is blended in the range of 10 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, and blended in the range of 12 parts by mass or more and 30 parts by mass or less. Preferably it is. By mix | blending within such a range, bridge | crosslinking can be advanced effectively, without a crosslinking treatment agent bleeding out.

(White material)
The white material is contained in the reflector 12 together with the cured product of the electron beam curable resin and the fibrous material. That is, the white material is included in the reflector forming composition for forming the reflector 12, and the reflector 12 formed of the reflector forming composition is added to the cured product and fibrous material of the electron beam curable resin. Included with the material. Examples of the white material include white pigments such as titanium oxide, zinc sulfide, zinc oxide, barium sulfide, and potassium titanate. These white materials can be used alone or in admixture of two or more. Of these, titanium oxide is preferable.

  The white material is preferably contained within a range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, and is contained within a range of 200 parts by mass or more and 450 parts by mass or less. More preferably. By making it within this range, product performance (for example, light reflectance, strength, molding warp, etc. of the reflector) can be maintained well. Moreover, it is possible to prevent the white material from being processed due to the large amount of white material, or even if the material can be processed, the molded state is poor and the product performance (for example, the light reflectance of the reflector, etc.) is deteriorated.

  The average particle diameter of the white material is within the range of 0.10 μm or more and 0.50 μm or less in the primary particle size distribution from the viewpoint of obtaining high reflectivity in consideration of the moldability of the reflector forming composition. Preferably, it is in the range of 0.10 μm or more and 0.40 μm or less, and more preferably in the range of 0.21 μm or more and 0.25 μm or less. An average particle diameter can be calculated | required as mass average value D50 in the particle size distribution measurement by a laser beam diffraction method.

(Fibrous material)
The fibrous material is included in the reflector 12 together with the cured product of the electron beam curable resin and the white material. That is, the fibrous material is included in the reflector forming composition for forming the reflector 12, and the electron beam curable resin cured product and white are added to the reflector 12 formed from the reflector forming composition. Included with the material. As the fibrous material, glass fibers can be preferably mentioned, but fibers made of other materials may be used. For example, fibers such as wollastonite, acicular titanium oxide, acicular potassium titanate, talc, carbon fiber, boron fiber, aramid fiber, polyethylene fiber, and fibrous xylon may be used. These fibrous materials can be used alone or in combination of two or more.

  The fibrous material preferably has an average length (fiber length) in the range of 40 μm or more and 100 μm or less. By setting the fiber length within this range, the fibrous material is filled in a large amount in the cured product, and the strength of the obtained reflector 12 can be increased. In addition, it is rare that long glass fibers as in the prior art jump out of the reflector surface and impair the light reflectivity. Furthermore, conventional long glass fibers are broken by mechanical mixing means at the time of preparing a composition for forming a reflector to generate mechano radicals, which tend to deteriorate the electron beam curable resin. The fibrous material is less likely to generate such mechano radicals and can suppress the deterioration of the electron beam curable resin.

  If the average length of the fibrous material is less than 40 μm, the strength of the obtained reflector 12 may not be sufficiently increased. On the other hand, if the average length of the fibrous material exceeds 100 μm, the mechanical mixing means at the time of preparation of the reflector forming composition breaks to generate mechano radicals, which degrade the electron beam curable resin. It may become easy, and may jump out of the reflector surface and impair the light reflectivity. Moreover, the fluidity | liquidity of the composition for reflector formation may worsen, and the injection moldability of the reflector 12 may fall.

  The cross-sectional form of the fibrous material is not particularly limited, and may be a circular cross section or an irregular cross section. The average diameter of the cross section is not particularly limited, but is preferably in the range of 5 μm or more and 50 μm or less. In addition, the average length and diameter of a fibrous material can measure the surface or cross section of the obtained reflector 12 with an optical microscope, X-ray CT, etc.

  The fibrous material is preferably contained within a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin. By including the fibrous material in this range, the strength of the obtained reflector 12 can be increased. If the amount is less than 60 parts by mass, the blending amount is small, and sufficient strength may not be imparted to the reflector 12, and if the amount exceeds 200 parts by mass, the blending amount is too large for reflector formation. The reflector 12 may not be formed by injection molding the composition.

(Other)
The cured product of the electron beam curable resin may contain other additive materials as long as the effects of the present invention are not impaired. Examples of the additive material include various whiskers, silicone powders, thermoplastic elastomers, organic synthetic rubbers, fatty acid esters, glycerate esters, zinc stearate, calcium stearate and the like for the purpose of improving the properties of the obtained reflector 12. Internal mold release agents, antioxidants such as benzophenone, salicylic acid, cyanoacrylate, isocyanurate, oxalic anilide, benzoate, hindered amine, benzotriazole, and phenol, hindered amine, Examples thereof include light stabilizers such as benzoates.

  A hydrophobizing agent for enhancing the dispersibility of the white material or the fibrous material may be included. Examples of the hydrophobizing agent include silane coupling agents, silicone oils, fatty acids, and fatty acid metal salts. Among these, a silane coupling agent and silicone oil are preferably used because they have a high effect of improving dispersibility.

  Further, a flame retardant, a silane coupling agent or a titanium coupling agent as a substrate adhesion aid may be included.

  As a method for mixing the composition for forming a reflector containing such a material, known means such as a stirrer such as two or three rolls, a homogenizer, a planetary mixer, a melt kneader such as a polylab system or a lab plast mill, etc. Can be applied. These may be performed in any of normal temperature, cooling state, heating state, normal pressure, reduced pressure state, and pressurized state. The composition for forming a reflector after being mixed is then injection molded and electron beam cured to form the reflector 12.

(Reflector form)
As shown in FIGS. 1 and 2, the shape of the reflector 12 conforms to the shape of the end portion of the lens 18, that is, the joint portion, and is not particularly limited. Usually, it has a cylindrical shape such as a square shape, a circular shape, an elliptical shape, or a ring shape. In the form illustrated in FIG. 1, the reflector 12 is a cylindrical body, in other words, a ring-shaped body, and all end surfaces of the reflector 12 are in contact with the surface of the substrate 14 and are fixed.

  As shown in the drawing, the inner surface of the reflector 12 is preferably widened upward in a tapered shape in order to enhance the directivity of light emitted from the optical semiconductor element 10. In addition, the reflector 12 may have an end portion on the lens 18 side processed into a shape corresponding to the shape of the lens 18, and in that case, the reflector 12 can also function as a lens holder.

  The reflector 12 may have various other forms. For example, as shown in FIG. 2, it is also possible to use a reflector 12 in which a reflective layer 12a including the essential components of the reflector 12 described above is provided on the light reflecting surface side of the member 12b. When the reflector shown in FIG. 1 is compared with the reflector shown in FIG. 2, the reflector 12 in the form shown in FIG. 1 is a material in which the entire reflector 12 includes the essential components of the reflector 12 described above. 2, the reflector 12 in the form shown in FIG. 2 includes a member 12b that does not include the essential components of the reflector 12 described above, and a reflective layer 12a that includes the essential components of the reflector 12. They are different in that they are combined. In the form shown in FIG. 2, the reflector 12 is formed with the reflective layer 12a only on the light reflecting surface side of the member 12b. However, the reflective layer 12a may be formed on the entire surface of the member 12b. The thickness of the reflective layer 12a is preferably 500 μm or less, more preferably 300 μm or less, from the viewpoint of reducing the thermal resistance.

  In the form shown in FIG. 1, a lens 18 is provided on the reflector 12. As the lens 18, a conventionally known lens can be appropriately selected and used. The lens 18 is usually made of resin and may be colored.

  The space portion 20 formed by the substrate 14, the reflector 12 and the lens 18 may be a transparent sealing portion filled with a transparent silicone resin or the like, or may be a gap portion. The space portion 20 is usually a transparent sealing portion filled with a material that provides translucency and insulation, and the force applied by directly contacting the lead wire 16 in wire bonding mounting, and Electrically generated by the lead wire 16 being disconnected, disconnected, or short-circuited from the connection portion with the optical semiconductor element 10 and / or the connection portion with the electrode due to indirectly applied vibration, impact, or the like. Problems can be prevented. At the same time, the optical semiconductor element 10 can be protected from moisture, dust, etc., and the reliability can be maintained over a long period of time.

  Examples of the material (transparent sealant composition) that imparts translucency and insulation usually include silicone resins, epoxy silicone resins, epoxy resins, acrylic resins, polyimide resins, polycarbonate resins, and the like. . Of these, silicone resins are preferred from the viewpoints of heat resistance, weather resistance, low shrinkage, and discoloration resistance.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 configured in this way is provided around an optical semiconductor element (LED element) 10 and the optical semiconductor element 10, and transmits light from the optical semiconductor element 10 to a predetermined level. A reflector (reflector) 12 that reflects in the direction is provided on the substrate 14. And at least one part (all in the case of FIG. 1) of the light reflection surface of the reflector 12 is comprised with the hardened | cured material (reflector 12) of an above-described reflector formation composition. The reflector 12, which is a cured product of the composition for forming a reflector, is a cured product including at least a cured product of an electron beam curable resin, a white material, and a fibrous material.

  As described above, according to the present invention, a semiconductor light emitting device including a reflector excellent in durability, strength, and reflectivity can be provided.

[Method for Manufacturing Semiconductor Light-Emitting Device]
The method for manufacturing the semiconductor light emitting device 1 according to the present invention is a method for manufacturing the semiconductor light emitting device 1 according to the present invention described above. More specifically, a method of manufacturing a semiconductor light emitting device having a substrate 14, an optical semiconductor element 10, and a reflector 12 that reflects light emitted from the optical semiconductor element 10, which includes an electron beam curable resin and a white material. The fibrous material has an average length of 40 μm or more and 100 μm or less, and the fibrous material is in a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin. A process for injection-molding the composition for forming a reflector contained therein, and a process for irradiating an electron beam before or after the process for injection molding.

  This manufacturing method includes an injection molding step of a composition for forming a reflector that is cured by an electron beam, and a step of irradiating the composition for forming a reflector with an electron beam. Specifically, after the reflector 12 is formed by injection molding, it may be cured by irradiation with an electron beam, or a crosslinking reaction by electron beam irradiation may be performed before molding as long as the moldability is not impaired. That is, the electron beam curable resin before the reflector 12 is formed by injection molding may be cured by irradiation with an electron beam, or the electron beam curing before the reflector 12 is formed by injection molding. The resin may be semi-cured by irradiating it with an electron beam, and may be obtained by irradiating and curing an electron beam on a semi-cured electron beam curable resin.

  In this manufacturing method, since the said specific fibrous material is contained in the reflector formation composition, the hardened | cured material containing a white material can be reinforced with a fibrous material. Moreover, the fibrous material having the above-described size can be filled in the cured product of the electron beam curable resin, the strength of the reflector 12 can be increased, and the light reflectivity is hardly hindered. Deterioration of the curable resin can also be suppressed. As a result, since the reflector 12 having excellent durability and strength and good reflectivity can be formed, defects such as cracks do not occur, and the manufacturing yield and long-term durability of the product are excellent.

  In the semiconductor light emitting device 1a illustrated in FIG. 1, for example, a predetermined shape is formed from the reflector forming composition of the present invention by transfer molding, compression molding, injection molding, or the like using a mold having a cavity space of a predetermined shape. The reflector 12 is formed. Thereafter, the separately prepared optical semiconductor element 10, electrodes and lead wires 16 are fixed to the substrate 14 with an adhesive or a bonding member, and further fixed to the reflector 12 on the substrate 14. Next, a transparent sealant composition containing a silicone resin or the like is poured into the recess formed by the substrate 14 and the reflector 12, and cured by heating, drying, or the like to form a transparent sealing portion. Thereafter, by arranging the lens 18 on the transparent sealing portion, the semiconductor light emitting device 1a shown in FIG. 1 is obtained. In addition, after mounting the lens 18 in a state where the transparent sealant composition is uncured, the transparent sealant composition may be cured.

  The reflector forming composition of the present invention can be processed into a final shaped product by an ordinary molding method. Examples of the molding method include press molding, transfer molding, injection molding, and combinations thereof. In particular, injection molding is preferred. In the injection molding method, a reflector forming composition is put into a cylinder, and an olefin resin (polymethylpentene or the like) contained in the reflector forming composition is melted. Next, the screw is rotated to inject the reflector forming composition with a predetermined injection pressure onto the substrate 14 fitted in the mold. And after holding and applying a holding pressure or a back pressure, the reflector 12 can be obtained by taking out from a metal mold | die. Various conditions at this time are also not particularly limited, but it is preferable to carry out the production under the conditions of cylinder temperature; 200 ° C. to 400 ° C., mold temperature; 20 ° C. to 150 ° C., injection molding pressure; By manufacturing under these conditions, the reflector 12 with particularly high moldability can be manufactured.

  As the injection molding apparatus, for example, an injection molding apparatus (LA40, maximum mold clamping force 392 kN) manufactured by Sodick Plustech Co., Ltd. can be used. The processing temperature should just be the cylinder temperature which the composition for reflector formation plasticizes, and can be injection-filled in the space in a metal mold | die, Preferably it is 200-300 degreeC, More preferably, it is 230-270 degreeC. When the processing temperature exceeds 300 ° C., the fluidity of the composition for forming a reflector is improved, but the resin composition may be thermally deteriorated. On the other hand, when the processing temperature is less than 200 ° C., the fluidity of the composition for forming a reflector is insufficient, and molding may be difficult and each component may not be sufficiently dispersed.

  In the injection molding method, glass fibers or the like that are fibrous materials may impair fluidity. Therefore, for the production of a thin molded product having a thickness of 0.1 mm to 2 mm of the molded product (reflector 12) that requires thin molding such as the product of the present invention, the blending amount of a fibrous material such as glass fiber Is preferably in the range of 60 to 200 parts by mass with respect to 100 parts by mass of the electron beam curable resin.

  The acceleration voltage of the electron beam can be appropriately selected according to the electron beam curable resin used and the thickness of the layer. For example, in the case of a molded product having a thickness of about 1 mm, it is usually preferable to cure the uncured molded product at an acceleration voltage of about 250 kV to 3000 kV. In electron beam irradiation, the transmission capability increases as the acceleration voltage increases. Therefore, when the substrate 14 deteriorated by the electron beam is used, the transmission depth of the electron beam and the thickness of the reflector 12 are substantially equal. By selecting the accelerating voltage so as to be equal to, it is possible to suppress the irradiation of the extra electron beam onto the substrate 14 and to minimize the degradation of the substrate 14 due to the excess electron beam. Further, the absorbed dose when irradiating the electron beam is appropriately set depending on the composition of the composition for forming the reflector, but the amount at which the crosslinking density of the reflector 12 is saturated is preferable, and the irradiation dose is 50 kGy to 600 kGy. Is preferred.

  The electron beam source is not particularly limited. For example, various electron beam accelerators such as a cockroft Walton type, a bandegraft type, a resonant transformer type, an insulated core transformer type, a linear type, a dynamitron type, and a high frequency type are used. be able to.

[Parts for semiconductor light emitting device and manufacturing method thereof]
The semiconductor light emitting device component according to the present invention includes a substrate 14 and a reflector 12 that reflects light emitted from the optical semiconductor element 10, and the reflector 12 is a cured product of an electron beam curable resin and a white material. And the fibrous material has an average length of 40 μm or more and 100 μm or less, and the material is in a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin. Contained within. Further, the method for manufacturing a semiconductor light emitting device component according to the present invention is a method for manufacturing such a semiconductor light emitting device component, which includes at least an electron beam curable resin, a white material, and a fibrous material, as described above. The average length of the fibrous material is in the range of 40 μm to 100 μm, and the fibrous material is contained in the range of 60 parts by mass to 200 parts by mass with respect to 100 parts by mass of the electron beam curable resin. A step of injection-molding the body-forming composition, and a step of irradiating an electron beam before or after the injection-molding step.

  As the substrate 14, the reflector 12, and the composition for forming a reflector, those described in the semiconductor light emitting device 1 of the present invention can be used as they are, and detailed description thereof is omitted here. According to the semiconductor light emitting device component of the present invention, it is possible to provide a semiconductor light emitting device component that is excellent in reflectivity for light such as ultraviolet light and excellent in durability, strength, and reflectivity.

[Reflector and composition for forming reflector]
The reflector 12, the manufacturing method thereof, and the composition for forming a reflector according to the present invention are the same as the reflector and the composition for forming a reflector described above in the section of the semiconductor light emitting device and the manufacturing method thereof. Then, the explanation is omitted.

  The reflector 12 and the composition for forming a reflector can be applied to various applications as a composite material applied on a substrate and cured, or as a cured product of the composition for forming a reflector. For example, it can be applied as a heat-resistant insulating film, a heat-resistant release sheet, a heat-resistant transparent substrate, a light reflecting sheet for solar cells, a reflector such as an LED, or a light source for TV (reflector).

  Hereinafter, the present invention will be described with reference to examples and comparative examples. In addition, “part” in the sentence is “part by mass”. The materials used in Examples 1 to 7 and Comparative Examples 1 to 6 are as follows.

[Various materials]
-Electron beam curable resin; polymethylpentene resin (TPX RT-18, manufactured by Mitsui Chemicals, Inc.)
・ Crosslinking agent; electron beam crosslinking agent (TAIC: triallyl isocyanurate, manufactured by Nippon Kasei Co., Ltd.)
White material: titanium oxide particles (PF-691, rutile structure, average particle size 0.21 μm, manufactured by Ishihara Sangyo Co., Ltd.)

Additive a: Silane coupling agent (KBM-3063, manufactured by Shin-Etsu Chemical Co., Ltd.)
Additive b; antioxidant (IRGANOX 1010, manufactured by BASF Japan Ltd.)
Additive c; antioxidant (PEP-36, manufactured by ADEKA Corporation)
Additive d: Release agent (SZ-2000, manufactured by Sakai Chemical Industry Co., Ltd.)

-Fibrous material a: glass fiber (PF70E-001, fiber length 70 μm, manufactured by Nittobo Co., Ltd.)
Fibrous material b: glass fiber (PF40E-001, fiber length 40 μm, manufactured by Nittobo Co., Ltd.)
Fibrous material c: glass fiber (PF80E-401, fiber length 80 μm, manufactured by Nittobo Co., Ltd.)
-Fibrous material d: glass fiber (PF100E-401, fiber length 100 μm, manufactured by Nittobo Co., Ltd.)

-Fibrous material e; glass fiber (PF20E-001, fiber length 20 μm, manufactured by Nittobo Co., Ltd.)
-Fibrous material f: glass fiber (CSG3PA-820, fiber length 3 mm, manufactured by Nittobo Co., Ltd.)
Spherical material g: Spherical silica (F-HS20, particle size 20 μm, manufactured by Kinsei Matec Co., Ltd.)
Spherical material h: spherical silica (F-HD05, particle size 5 μm, manufactured by Kinsei Matec Co., Ltd.)

[Examples 1-7, Comparative Examples 1-6]
As shown in Table 1 below, various materials were blended and kneaded with a roll to obtain a composition for forming a reflector. The obtained composition for forming a reflector was pelletized using an extruder (Nippon Placon Co., Ltd., MAX30: die diameter 3.0 mm) and a pelletizer (Toyo Seiki Seisakusho, MPETC1).

  Using a pelletized composition for forming a reflector, an injection molding machine (Sodick TR40ER, Prepla type, Sodick Co., Ltd.) is used to form a 700 μm thickness, an outer dimension of 35 mm × 35 mm, an opening on a silver-plated frame (thickness 250 μm). A reflector was obtained by molding to a part of 2.9 mm × 2.9 mm. The injection molding machine conditions were as follows: cylinder temperature: 260 ° C., mold temperature: 70 ° C., injection speed: 200 mm / second, holding pressure: 100 MPa, holding pressure time: 1 second, cooling time: 15 seconds. These compacts 1 and 2 were irradiated with an electron beam at an acceleration voltage of 800 kV and an absorbed dose of 400 kGy. The following characteristics were evaluated. The results are shown in Table 1.

[Evaluation]
(Reflectance, durability)
The reflectance was measured in the initial stage where the molded reflector sample was not heat-treated, and is shown in Table 1 as “reflectance”. The molded reflector sample was measured after being heated at 200 ° C. for 20 hours, and is shown in Table 1 as “durability”. The reflectance was measured using a spectrophotometer (UV-2550, manufactured by Shimadzu Corporation) for the light reflectance at a wavelength of 230 to 780 nm. Table 1 shows the results of reflectance (%) at a wavelength of 450 nm.

(Strength)
The strength (package strength) of the reflector sample after molding was measured. The molded reflector sample was evaluated by visually observing the presence or absence of cracks after standing at 150 ° C. for 500 hours. “◯” indicates that no crack was generated, and “×” indicates that a crack was generated.

(Liquidity)
The fluidity of the reflector forming composition was evaluated by measuring the melt volume rate (MVR). The MVR of the composition for forming a reflector was measured by a method based on the method described in the melt flow rate (MFR) of thermoplastics specified in JIS K 7210: 1999. Specifically, the test was performed at a test temperature of 260 ° C., a test load of 2.16 kg, and a standard moving distance of 2.5 cm. As a measuring device, a melt flow tester (manufactured by Chiast Corp.) was used.

(Length of fibrous material)
FIG. 3 is an enlarged photograph of the surface of the reflector obtained in Example 1, and FIG. 4 is an enlarged photo of the surface of the reflector obtained in Comparative Example 4. The length of the fibrous material contained in the molded reflector can be evaluated with an optical microscope or X-ray CT. In addition, the evaluation by X-ray CT can be measured only when the glass fiber is large and the white material (titanium oxide) is small. The length of the glass fiber is cut out of a part of the molded reflector, put into a crucible, steamed until no flammable gas is generated on an electric stove, and then further in an electric furnace set at 500 ° C. for 1 hour. Calcination gives a residue. The length of the glass fiber can also be obtained by observing an image obtained by enlarging the residue 50 to 100 times with an optical microscope.

  FIG. 3 is an optical micrograph of the reflector surface of Example 1, and the white lines are glass fibers. As a result of observation, it was confirmed that the glass fiber having an average of 70 μm in the initial range was in the range of 5.2 to 65.2 μm. On the other hand, FIG. 4 is an X-ray CT photograph of the reflector surface of Comparative Example 4, and the gray line is glass fiber. As a result of observation, it was confirmed that the glass fiber that was initially 3 mm was in the range of 10 to 601 μm, and it was confirmed that the glass fiber was broken finely as compared with Example 1.

  As is clear from the results of Table 1, the reflectors of Examples 1 to 7 formed using the composition for forming a reflector that satisfies all the requirements of the present invention are all reflective, durable, and strong. Good results were obtained in the evaluation. On the other hand, Comparative Examples 1 to 6 using a composition for forming a reflector that does not satisfy some or all of the requirements of the present invention cannot satisfy all of reflectance, durability, and strength. The superiority became clear.

1, 1a, 1b Semiconductor light emitting device 10 Optical semiconductor element 12 Reflector 12a Reflective layer 12b Member 14 Substrate 16 Lead wire 18 Lens 20 Space part

Claims (6)

A substrate, an optical semiconductor element, and a reflector having a thickness of 0.1 mm to 2 mm that reflects light emitted from the optical semiconductor element, the reflector being a cured product of an electron beam curable resin and a white material And the fibrous material, the white material is contained within a range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, and the length of the fibrous material is and at 5.2μm or more 65.2μm or less, wherein the fibrous material is contained within the range of 200 parts by weight 60 parts by mass or more with respect to the electron beam curing resin 100 parts by weight, and wherein the Semiconductor light emitting device. A method for manufacturing a semiconductor light emitting device, comprising: a substrate; an optical semiconductor element; and a reflector having a thickness of 0.1 mm to 2 mm that reflects light emitted from the optical semiconductor element,
It includes at least an electron beam curable resin, a white material, and a fibrous material, and the white material is included in a range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, A step of injection-molding a composition for forming a reflector, wherein the fibrous material is contained in a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin;
Possess a step of irradiating an electron beam on one or both of the following steps before and process for the injection molding,
A length of the fibrous material contained in the reflector after curing is 5.2 μm or more and 65.2 μm or less . A substrate and a reflector having a thickness of 0.1 mm or more and 2 mm or less that reflects light emitted from the optical semiconductor element, wherein the reflector includes a cured product of an electron beam curable resin, a white material, and a fibrous material. The white material is included in a range of 200 parts by mass to 500 parts by mass with respect to 100 parts by mass of the electron beam curable resin, and the fibrous material has a length of 5.2 μm to 65. and at 2μm or less, wherein the fibrous material is contained within the range of 200 parts by weight 60 parts by mass or more with respect to the electron beam curing resin 100 parts by weight, component semiconductor light emitting device according to claim. A method for manufacturing a component for a semiconductor light-emitting device, comprising a substrate and a reflector having a thickness of 0.1 mm to 2 mm that reflects light emitted from the optical semiconductor element,
It includes at least an electron beam curable resin, a white material, and a fibrous material, and the white material is included in a range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, A step of injection-molding a composition for forming a reflector, wherein the fibrous material is contained in a range of 60 parts by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin;
Possess a step of irradiating an electron beam on one or both of the following steps before and process for the injection molding,
A method of manufacturing a component for a semiconductor light emitting device, wherein the fibrous material contained in the reflector after curing has a length of 5.2 μm or more and 65.2 μm or less . A cured product with a white material and a fibrous material at least including thickness 0.1mm 2mm or more or less reflectors electron beam curable resin,
The white material is included in the range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin, and the length of the fibrous material is 5.2 μm or more and 65.2 μm or less . The reflector is characterized in that the fibrous material is contained in a range of 60 parts by mass to 200 parts by mass with respect to 100 parts by mass of the electron beam curable resin. A method of manufacturing an electron beam curable resin and a white material and a fibrous material at least including thickness 0.1mm 2mm or more or less of the reflector,
The white material is contained within a range of 200 parts by mass or more and 500 parts by mass or less with respect to 100 parts by mass of the electron beam curable resin , and the fibrous material is contained with respect to 100 parts by mass of the electron beam curable resin. A step of injection-molding a composition for forming a reflector contained in a range of 60 parts by mass or more and 200 parts by mass or less;
Possess a step of irradiating an electron beam on one or both of the following steps before and process for the injection molding,
The length of the said fibrous material contained after hardening is 5.2 micrometers or more and 65.2 micrometers or less, The manufacturing method of the reflector characterized by the above-mentioned .