TW201543723A - Semiconductor light-emitting device and optical-semiconductor-mounting substrate - Google Patents

Abstract

A semiconductor light-emitting device comprising, at least, a substrate, a reflector that has a concave cavity, and an optical semiconductor element. Said semiconductor light-emitting device is characterized in that: the reflector is made from a resin composition that contains a fibrous inorganic substance; the reflector has, in the thickness direction thereof, a section containing a region in which the fibrous inorganic substance is oriented and a region in which the fibrous inorganic substance is unoriented; and, in said section, the thickness of the region in which the fibrous inorganic substance is oriented is no more than 50% of the total thickness of the reflector. An optical-semiconductor-mounting substrate and a semiconductor light-emitting device provided with a reflector that does not warp due to heating or the like are provided.

Description

Semiconductor light-emitting device and optical semiconductor mounting substrate

The present invention relates to a semiconductor light-emitting device and an optical semiconductor mounting substrate.

An LED (Light Emitting Diode) element which is one of the semiconductor light-emitting elements is small in size and long in life, and is excellent in power-saving property. Therefore, it is widely used as a light source such as a display lamp. Then, in recent years, since LED elements having higher luminance can be manufactured more inexpensively, the use as a light source for replacing fluorescent lamps and incandescent electric bulbs is reviewed. When applied to such a light source, in order to obtain a large illuminance, a surface mount type LED package is often used as a substrate (LED mounting substrate) containing a conductive substance such as silver to reflect a substance such as silver. The LED element is placed above, and a reflector that reflects light in a predetermined direction is disposed around each LED element.

In addition, a molded article using a resin composition in which a fibrous material is blended with a thermoplastic resin has been known. For example, a molded article in which carbon fibers, glass fibers, or the like are blended with an aromatic polycarbonate resin is known. . However, such a molded article has a very large anisotropy in the alignment of the fibrous material at the time of injection molding, and the molding shrinkage ratio due to the direction of the molded article is different. Therefore, there is a problem that the molded article warps.

In response to this problem, the proposal uses carbon fiber with an aspect ratio of 5~10. Resin molded product (see Patent Document 1). It has been reported that when this resin molded article is used, the mechanical properties are improved, and the anisotropy of the mold shrinkage ratio is also remarkably lowered. However, such a low anisotropy carbon fiber-reinforced molded article molded article has low strength and cannot be said to be sufficient in strength for use in a semiconductor light-emitting device or an optical semiconductor-mounting substrate. Further, a system in which an isotropic filler such as glass beads is blended cannot improve mechanical properties such as mechanical strength and bending strength.

However, in a semiconductor light-emitting element such as an LED element used in a semiconductor light-emitting device, since heat is generated during light emission, the reflector deteriorates due to an increase in temperature of the element, and the reflectance thereof is lowered to cause light emitted from the LED package. The situation where the brightness is lowered.

In this case, since the reflector is required to have heat resistance, it is proposed to form an electron beam curable resin composition containing polymethylpentene and a specific crosslinking treatment agent as a reflector for improving heat resistance, and A semiconductor light-emitting device in which the resin composition is used for formation of a reflector is proposed (see Patent Document 2). The resin composition described in Patent Document 2 is excellent in heat resistance, and even when it is a molded body such as a reflector, it can exhibit excellent heat resistance. In addition, Patent Document 3 also proposes an electron beam curable resin composition containing a specific crosslinking treatment agent, etc., and it is proposed to use the resin composition for a reflector semiconductor light-emitting device.

[Previous Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent Publication No. 4-8759

Patent Document 2: International Publication WO2011/027562

Patent Document 3: Japanese Laid-Open Patent Publication No. 2013-166926

In the resin compositions described in Patent Documents 2 and 3, it is described that glass fibers can be added. The anisotropy is caused by the blending of the glass fibers, and the molding shrinkage ratio of the molded article (reflector) may be partially different in the planar direction or the vertical direction. In that case, warpage occurs in the molded article, and a gap is formed at the interface with the substrate (lead frame), resulting in poor adhesion to the frame.

Thus, an object of the present invention is to provide a semiconductor light-emitting device and an optical semiconductor-mounting substrate which have a reflector which does not cause warpage and has good adhesion even when heated or the like.

The inventors of the present invention have repeatedly conducted intensive studies to achieve the above object, and as a result, have found that a semiconductor light-emitting device having a reflector can be solved by containing a fibrous inorganic substance and controlling the alignment angle of the fibrous inorganic substance. The above issues. The present invention has been completed based on this knowledge.

In other words, the present invention provides a semiconductor light-emitting device comprising: a substrate, a reflector having a recessed cavity shape, and a semiconductor light-emitting device of the optical semiconductor element, characterized in that: The reflection system is formed of a resin composition containing a fibrous inorganic substance, and has a portion including a region in which the fibrous inorganic substance has been aligned and an unaligned region in the thickness direction of the reflector, and the fibrous inorganic substance in the portion is aligned Thickness of the area (2) A semiconductor light-emitting device comprising at least a substrate, a reflector having a recessed cavity shape, and a semiconductor light-emitting device of an optical semiconductor element, characterized in that: The outer shape of the semiconductor light-emitting device is formed by cutting, and the cutting surface is formed by a region in which the fibrous inorganic substance has been aligned and a non-aligned region, and the thickness of the region in which the fibrous inorganic substance is aligned in any portion is relative to the reflector The entire thickness of the portion is 50% or less. (3) A substrate for mounting an optical semiconductor, comprising: a substrate and a substrate for mounting a cavity having a recessed shape, wherein the reflective system comprises fibers. The resin composition of the inorganic substance is formed, and has a portion including a region in which the fibrous inorganic substance has been aligned and an unaligned region in the thickness direction of the reflector, and the thickness of the region in which the fibrous inorganic substance is aligned in the portion is relatively The entire thickness of the reflector portion is 50% or less; and (4) an optical semiconductor mounting substrate having a substrate and having a concave surface The optical semiconductor mounting substrate of the reflector of the shaped cavity is characterized in that the outer shape of the optical semiconductor mounting substrate is formed by cutting, and the cutting surface is formed by a region in which the fibrous inorganic substance has been aligned and a non-aligned region. The thickness of the region in which the fibrous inorganic substance in the arbitrary portion is aligned is 50% or less with respect to the entire thickness of the reflector portion.

In the semiconductor light-emitting device of the present invention, even if the reflector of the constituent elements is heated, warpage does not occur, and the adhesion can be maintained. Therefore, the mechanical strength, the heat resistance, and the adhesion between the reflector and the substrate are excellent. Therefore, it is possible to provide a semiconductor light-emitting device and a substrate for mounting an optical semiconductor having high long-term reliability.

1‧‧‧Semiconductor light-emitting device

10‧‧‧Semiconductor components

12‧‧‧ reflector

12a‧‧‧Alignment area

12b‧‧‧Non-aligned area

13a‧‧‧Mats

13b‧‧‧ lead section

14‧‧‧Substrate (metal frame, lead frame)

15‧‧‧Insulation

16‧‧‧ lead

18‧‧‧ lens

20‧‧‧ cavity

22‧‧‧ Sealing Department

24‧‧‧Wiring substrate

Fig. 1 is a schematic view showing a semiconductor light-emitting device of the present invention.

FIGS. 2(a) to (f) are schematic views showing a manufacturing process of the semiconductor light-emitting device and the optical semiconductor-mounting substrate of the present invention.

Fig. 3 is a view showing the observation position and the measurement position under the microscope observation and the X-ray CT measurement.

[Formation of the Invention]

The semiconductor light-emitting device of the present invention will be described in detail using FIG.

The semiconductor light-emitting device 1 of the present invention includes a reflector 12 having a cavity 20 having a concave shape, at least one optical semiconductor element 10 provided on a bottom surface of the concave portion, and a substrate 14 for mounting the substrate The pad portion 13a of the optical semiconductor element and the lead portion 13b for electrically connecting to the optical semiconductor element. The optical semiconductor element mounted on the pad portion is electrically connected to the lead portion by the lead 16 .

Further, the cavity 20 may be a void, but from the viewpoint of preventing deterioration of electrical properties, protecting the optical semiconductor element from humidity and dust, etc., it is preferable to fill the optical semiconductor element and to seal the optical semiconductor. The light emitted from the element is transmitted to the external resin (sealing resin). The sealing resin may also contain a phosphor as needed. Furthermore, it is also possible to set the lens 18 for collecting light emitted from the optical semiconductor element. Above the reflector 12. The lens is usually made of a resin, and may have various structures depending on the purpose, use, and the like, or may be colored as needed.

Hereinafter, each member will be described in detail.

<Substrate>

The substrate 14 in the semiconductor light-emitting device 1 of the present invention is also referred to as a metal thin plate of a lead frame, and the material to be used is mainly a metal (a pure metal or an alloy), and examples thereof include aluminum and copper. , copper-nickel-tin alloy, iron-nickel alloy, and the like. Further, the substrate may be formed with a light reflecting layer so as to cover a part or all of the front and back surfaces. The light reflecting layer desirably has a high reflection function of reflecting light from the optical semiconductor element. Specifically, for electromagnetic waves having a wavelength of 380 nm or more and 800 nm or less, the reflectance at each wavelength is preferably 65% or more and 100% or less, more preferably 75% or more and 100% or less, still more preferably 80% or more and 100% or less. When the reflectance is high, the loss of light emitted from the LED element is small, and the luminous efficiency as an LED package becomes high.

The material of the light-reflecting layer is, for example, silver or a metal containing silver, but the content of silver is preferably 60% by mass or more. If the silver content is 60% or more, a sufficient light reflection function can be obtained. From the same viewpoint, the content of silver is more preferably 70% by mass or more, and still more preferably 80% by mass or more.

Further, the thickness of the light-reflecting layer is preferably 1 to 20 μm, and if the thickness of the light-reflecting layer is 1 μm or more, a sufficient reflection function can be obtained, and if it is 20 μm or less, cost is advantageous, and workability is improved. .

The thickness of the substrate is not particularly limited, but is preferably in the range of 0.1 to 1.0 mm. If the thickness of the substrate is 0.1mm On the other hand, the strength of the substrate is large and it is difficult to deform. On the other hand, when it is 1.0 mm or less, processing is easy. From the same point of view, it is more preferably in the range of 0.15 to 0.5 mm.

The substrate is formed by a step of etching or press working a metal plate material, and has a pad portion on which an optical semiconductor element such as an LED chip is mounted, and a lead portion that supplies electric power to the optical semiconductor element. The pad portion and the lead portion are insulated, and the optical semiconductor element is connected to the lead portion by a step of wire-bonding or chip-bonding.

<reflector>

The reflector 12 has a function of reflecting light from the optical semiconductor element to the light exiting portion (in the first drawing, the direction of the lens 18).

The reflection system is formed of a resin composition containing at least a resin and a fibrous inorganic substance. Further, the reflector has a portion including the alignment region (12a) in which the fibrous inorganic substance has been aligned and the non-alignment region (12b) in the unaligned region. The alignment area (12a) can be obtained by any of the following methods.

(microscopic observation)

(1) The reflector light-emitting surface is placed upward, and a square reflector region having a side of 300 μm from one of the four sides of the four sides of the outer peripheral portion in the XY direction of the reflector is microscopically observed from above. (See Figure 3 for location).

(2) Binarizing the observed image to obtain a binarized image. Here, the binarization means that the weighted average of the brightness distributions of all the pixels in the image is used as a critical value for each of the constituent pixels, and the critical value or more is classified into white, and the smaller than the critical value is classified as black. Thereby, only fibrous The inorganic substance becomes black, and the other components become white, and the shape of the fibrous inorganic substance can be grasped.

(3) Elliptical approximation of the outer shape of the fibrous inorganic substance of the binarized image using the image processing software Image J.

(4) The angle between the central portion of the major axis of each fibrous inorganic material approximated by the ellipse and the side of the outer peripheral portion of the reflection is determined, and the average angle is defined as the alignment angle of 0 degrees.

(5) The alignment angle of each fibrous inorganic material from the alignment angle of 0 degrees was obtained. A region in which the orientation angle of 90% or more of the fibrous inorganic substance falls within the range of ±20 degrees is regarded as the alignment region (12a), and a region in which the orientation angle of the fibrous inorganic substance of 90% or more exceeds ±20 degrees is regarded as the non-alignment region ( 12b).

(6) The polishing was performed at a thickness not exceeding the height of the fibrous inorganic substance observed by microscopic observation, and the alignment angle was determined in the same manner. The alignment region in the thickness direction can be obtained by repeating this operation.

The above measurement was carried out by appropriately adjusting the magnification with an optical microscope (Axio Imager M1m, manufactured by Carl Zeiss Co., Ltd.).

(X-ray CT)

(1) The reflector light-emitting surface was placed upward, and a tomogram was taken from above using an X-ray CT apparatus. In the four sides of the outer peripheral portion of the reflector XY direction, a square reflector region including one side of any one side of 300 μm is enlarged (see FIG. 3 for the position).

(2) Binarizing the observed image to obtain a binarized image. Here, the binarization means that the weighted average of the brightness distributions of all the pixels in the image is used as a critical value for each of the constituent pixels, and the critical value is divided. The class is white and classifies less than the threshold as black. Thereby, only the fibrous inorganic substance becomes black, and the other components become white, and the shape of the fibrous inorganic substance can be grasped.

(3) Fourier transforming the aforementioned binarized image using the image processing software Image J to obtain a power spectral image. Moreover, the brightness of the power spectrum image is expressed in logarithm.

(4) Binarizing the power spectrum image to obtain a binarized image. In this binarization, the image density threshold is set to the half value position on the bright side of the brightness distribution in the image.

(5) Elliptical approximation of the binarized power spectrum image using image processing software Image J.

(6) If the ratio of the major axis/minor axis of the approximate ellipse is 2 or more, it is regarded as the alignment region (12a), and if it is smaller than 2, it is regarded as the non-alignment region (12b).

(7) By repeating this operation for each width smaller than the fiber cross section of the fibrous inorganic material observed microscopically, the alignment region in the thickness direction can be obtained.

In the tomographic image in the above (1), for example, a CT image (X-Z section, Y-Z section, and X-Y section) of a cross section can be obtained using "TDM1000-IW" manufactured by Yamato Scientific Co., Ltd. Examples of measurement conditions are shown below.

Determination conditions:

(1) X-ray conditions

X-ray tube voltage: 75.0 (kV)

X-ray tube current: 0.01 (mA)

(2) Scanning position

Magnification axis position: 10.0 (mm)

(3) Scan parameters

Video number: 360

Frame number / video: 3

(4) Reconstitution information

Matrix size X, Y, Z: 512 each

Field of view X, Y, Z: each 2.268 (mm)

3D pixel size X, Y, Z: 0.00443 (mm) each

In the invention of the present invention, in the thickness direction of the reflector formed by cutting in the outer shape of the optical semiconductor device, the thickness of the alignment region (12a) of the fibrous inorganic material is 50 with respect to the entire thickness of the reflector portion. %the following.

Further, if the thickness of the alignment region (12a) is satisfied, for example, as shown in Fig. 1, the alignment region may exist on the mounting surface of the optical semiconductor element.

By including such a region (alignment region and non-alignment region) having different alignment angles as described above and in the thickness, it is possible to obtain a reflector which does not warp even when heated or the like.

[fibrous inorganic matter]

The fibrous inorganic substance to be used in the present invention is not particularly limited as long as the effect of the present invention is exerted, and the aspect ratio is preferably from 2 to 50, more preferably from 5 to 50. When the aspect ratio is 2 or more, mechanical properties such as mechanical strength and bending strength can be improved. On the other hand, when the aspect ratio is 50 or less, the degree of occurrence of alignment is small.

Further, the fiber length of the fibrous inorganic substance is preferably from 10 to 1,000 μm. If the fiber length is 10 μm or more, the mechanical property can be made. On the other hand, if the fiber length is 1000 μm or less, the reflection characteristics are not impaired. From the above viewpoints, the fiber length of the fibrous inorganic substance is more preferably in the range of 30 to 200 μm.

Examples of the material of the fibrous inorganic material include glass fiber, zeolite fiber, potassium titanate fiber, ceramic fiber, and calcium silicate fiber. Among them, glass fiber is preferred from the viewpoints of transparency, toughness, and the like. .

The content of the fibrous inorganic substance is preferably 10 to 300 parts by mass based on 100 parts by mass of the resin forming the reflector. When it is 10 parts by mass or more, the effect of adding a fibrous inorganic substance can be exhibited, and the mechanical properties can be improved. On the other hand, when it is 300 parts by mass or less, the moldability and the strength of the molded article are improved. From the above viewpoints, the content of the fibrous inorganic substance is more preferably in the range of 50 to 200 parts by mass.

The reflector of the present invention is formed by a resin composition containing a resin and a fibrous inorganic material as described above. The resin used herein is preferably a thermoplastic resin from the viewpoints of moldability, workability, and the like.

[Thermoplastic resin]

Examples of the type of the thermoplastic resin include polyolefin, polyamine, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether oxime, and polybutylene terephthalate. Among them, polyether oximine or the like, among them, an olefin resin (polyolefin) is preferred. The olefin resin refers to a polymer in which the main chain is a constituent unit containing a carbon-carbon bond, and a case where the carbon bond contains a cyclic structure. It may be a monomer or a copolymer copolymerized with other monomers. For example, it can be mentioned that the norbornene derivative is a ring-opening shift-polymerized resin or a hydride thereof; a respective monomer of an olefin such as ethylene or propylene; or a block copolymer or a random copolymer of ethylene-propylene; or ethylene and/or propylene A copolymer of other olefins such as butene, pentene or hexene; and a copolymer of ethylene and/or other monomers such as propylene and vinyl acetate. Among them, polymethylpentene is preferred. Since the polymethylpentene has a refractive index of 1.46 and is close to the refractive index of the glass fiber or the cerium oxide particle, the optical properties such as transmittance and reflectance can be suppressed even when mixed.

The polymethylpentene resin is preferably a monomer of 4-methylpentene-1, but may also be a carbon number of 4-methylpentene-1 and other α-olefins such as ethylene, propylene, or the like. a copolymer of 2 to 20 alpha-olefins.

The polymethylpentene can be hardened by an electron beam, but it is preferably used as a combination crosslinking treatment agent in order to promote the crosslinking of the molecular chain simultaneously with crosslinking, and to promote effective crosslinking by the electron beam.

As the thermoplastic resin, an electron beam curable resin is preferably used from the viewpoint of imparting excellent heat resistance. The accelerating voltage in the case of using the electron beam curable resin can be appropriately selected depending on the thickness of the resin or the reflector to be used, but it is usually preferably cured at an acceleration voltage of about 70 to 10,000 kV.

Further, the amount of the irradiation radiation is preferably such that the crosslinking density of the resin layer is saturated, and is usually selected in the range of 5 to 600 kGy (0.5 to 60 Mrad), preferably 10 to 400 kGy (1 to 40 Mrad).

Further, as the electron beam source, there is no particular limitation, and for example, a Cockcroft Walton type, a Van de Graaff type, a resonant transformer type, an insulating core can be used. change A variety of electron line accelerators, such as a press type, a linear type, a dynamitron type, and a high frequency type.

[Crosslinking treatment agent]

In addition to the above materials, the resin composition forming the reflector of the present invention may be mixed with a crosslinking treatment agent in a range that does not impair the effects of the present invention. As the crosslinking treatment agent, it is preferred to have a structure having a saturated or unsaturated ring structure; at least one of the atoms forming at least one ring and an allyl group, a methacrylic group; A structure in which an allyl group of a linking group and an allyl group-containing substituent of a linking group are bonded to each other.

In particular, the crosslinking treatment agent having such a structure can be used in combination with an electron beam curable resin to exhibit excellent electron beam curability and impart excellent heat resistance to the reflector.

Examples of the saturated or unsaturated ring structure include a cyclic ring, a hetero ring, and an aromatic ring. The number of atoms forming the ring structure is preferably from 3 to 12, more preferably from 5 to 8, more preferably a 6-membered ring. Further, examples of the linking group include an ester bond, an ether bond, an alkylene group, and a (hetero) aryl group.

More specifically, it may be mentioned: triallyl cyanurate, methyl diallyl isocyanate, diallyl monoglycidyl isocyanuric acid, iso-cyanuric acid Monoallyl diglycidyl ester, trimethylallyl isomeric cyanuric acid, diallyl ester of o-decanoic acid, diallyl ester of meta-decanoic acid, and the like.

The molecular weight of the crosslinking treatment agent, from the resin composition The dispersibility in the middle and the effective crosslinking reaction are preferably 1,000 or less, more preferably 500 or less, still more preferably 300 or less. Further, the number of ring structures is preferably from 1 to 3, more preferably 1 or 2, still more preferably 1.

Further, the content of the crosslinking treatment agent is preferably 0.5 to 40 parts by mass based on 100 parts by mass of the resin. If it is used for this content, bleed-out does not occur and good hardenability can be imparted. From the above viewpoints, the content of the crosslinking treatment agent is more preferably from 1 to 30 parts by mass, particularly preferably from 5 to 20 parts by mass.

[white pigment]

In order to enhance the reflection effect, the resin composition used for the reflector of the present invention preferably contains a white pigment. As the white pigment, titanium oxide, zinc sulfide, zinc oxide, barium sulfide, potassium titanate or the like may be used singly or in combination, and among them, titanium oxide is preferred. The content of the white pigment is preferably 10 to 500 parts by mass, more preferably 50 to 480 parts by mass, still more preferably 100 to 450 parts by mass, per 100 parts by mass of the resin component.

The average particle diameter of the white pigment is preferably from 0.05 to 0.50 μm, more preferably from 0.10 to 0.40 μm, even more preferably from 0.15 to 0.30, in terms of primary particle size distribution in view of formability and from the viewpoint of obtaining high reflectance. Mm. The average particle diameter can be obtained by the mass average value D50 in the particle size distribution measurement by the laser light diffraction method.

[Dispersant]

In addition to the above materials, the resin composition forming the reflector of the present invention may be mixed with a dispersant in a range that does not impair the effects of the present invention. As a dispersing agent, it can generally be used for containing inorganic substances. A resin composition, but preferably a decane coupling agent. The decane coupling agent is an inorganic substance which has high dispersibility and compatibility with a resin, and can impart high mechanical properties and dimensional stability to a reflector.

Examples of the decane coupling agent include diazane gas such as hexamethyldiazepine; cyclic decazane; trimethyl decane, trimethyl chlorodecane, dimethyl dichloro decane, and A. Trichlorodecane, allyldimethylchlorodecane, trimethoxydecane, benzyldimethylchlorodecane, methyltrimethoxydecane, methyltriethoxydecane, isobutyltrimethoxydecane, two Methyl dimethoxy decane, dimethyl diethoxy decane, trimethyl methoxy decane, hydroxypropyl trimethoxy decane, phenyl trimethoxy decane, n-butyl trimethoxy decane, positive ten Hexyltrimethoxydecane, n-octadecyltrimethoxydecane, vinyltrimethoxydecane, vinyltriethoxydecane, propenyltrimethoxydecane,propenyltriethoxydecane,butenyltrimethyl Oxydecane, butenyl triethoxydecane, pentenyl trimethoxydecane, pentenyl triethoxydecane, hexenyltrimethoxydecane, hexenyltriethoxydecane, heptenyl Trimethoxy decane, heptenyl triethoxy decane, octenyl trimethoxy decane, octenyl triethoxy Alkyl, nonenyl trimethoxynonane, nonenyl triethoxy decane, decenyl trimethoxy decane, decenyl triethoxy decane, undecyl trimethoxy decane, undecyl three An alkane such as ethoxy decane, dodecenyl trimethoxy decane, dodecenyl triethoxy decane, γ-methoxy propyl trimethoxy decane, and vinyl triethoxy decane Hydrazine compound; γ-aminopropyl triethoxy decane, γ-(2-aminoethyl)aminopropyltrimethoxy decane, γ-(2-aminoethyl)aminopropyl group Dimethoxy decane, N-phenyl-3-aminopropyltrimethoxy decane, N-(2-Amino B An amine such as 3-aminopropyltrimethoxydecane and N-β-(N-vinylbenzylaminoethyl)-γ-aminopropyltrimethoxydecane or hexyltrimethoxydecane A quinone compound or the like.

The resin composition forming the reflector of the present invention can contain various additives as long as the effects of the present invention are not impaired. For example, for the purpose of improving the properties of the resin composition, various whiskers, anthrone powders, thermoplastic elastomers, organic synthetic rubbers, fatty acid esters, glycerates, zinc stearate, calcium stearate can be blended. Or an internal mold release agent; or a diphenylketone system, a salicylic acid system, a cyanoacrylate system, an isomeric cyanurate system, an oxalic anilide-based system, a benzoate system, An antioxidant such as a hindered amine type, a benzotriazole type or a phenol type; or an additive of a light stabilizer such as a hindered amine type or a benzoate type.

[Modulation of resin composition for reflector]

The resin composition forming the reflector of the present invention can be produced by mixing a resin, a glass fiber, and a white pigment and other additives added as needed in a predetermined ratio. As a mixing method, a 2-roll type roll mill or a 3-roll type roll mill, a homogenizer, a planetary mixer or the like can be applied; a melting of a POLYLAB system or a LABOPLAST mill (LABO PLASTOMILL), a 2-axis kneading extruder, or the like A well-known means such as a kneading machine. These can be performed in any of a normal temperature, a cooling state, a heating state, a normal pressure, a reduced pressure state, and a pressurized state.

[Shape shape]

The shape of the reflector 12 is a cylindrical shape or a wheel shape such as an angular shape, a circular shape, or an elliptical shape, depending on the shape of the end portion (joining portion) of the lens 18. In the schematic cross-sectional view of Fig. 1, the reflector 12 is a cylindrical body (wheel-shaped body). All of the end faces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.

Further, the reflector 12 has a shape of a cavity having a concave shape, and the inner surface of the reflector 12 may be expanded upward into a tapered shape in order to improve the directivity of light from the optical semiconductor element 10.

Further, when the end portion on the lens 18 side is processed into a shape that matches the shape of the lens 18, the reflector 12 can also function as a lens holder.

[Method of Manufacturing Reflector]

The method for producing the reflector of the present invention is not particularly limited, but it is preferably produced by injection molding using the above resin composition. At this time, from the viewpoint of formability, the cylinder temperature is preferably 200 to 400 ° C, more preferably 220 to 320 ° C. Further, the mold temperature is preferably from 10 to 170 ° C, more preferably from 20 to 150 ° C.

The reflector of the present invention may be further subjected to ionizing radiation irradiation treatment before or after the forming step as needed, and among them, electron beam irradiation treatment is preferred. By performing the electron beam irradiation treatment, the mechanical properties and dimensional stability of the reflector can be improved.

<sealing resin>

The cavity of the reflector of the present invention is preferably sealed with a resin (sealing resin) that can seal the optical semiconductor element and transmit light emitted from the optical semiconductor element to the outside. It is possible to prevent the lead wire from being disconnected, broken, or short-circuited from the connection portion with the optical semiconductor element and/or the connection portion with the electrode due to the force applied by the direct contact with the lead wire, the indirectly applied vibration, the impact, or the like during the wire bonding. The resulting poor electrical condition. Moreover, it is possible to simultaneously protect the optical semiconductor element from moisture, dust, etc., and maintain it for a long period of time. reliability.

The resin which can be used as the sealing resin is not particularly limited, and examples thereof include an anthrone resin, an epoxy ketone resin, an epoxy resin, an acrylic resin, a polyimide resin, a polycarbonate resin, and the like. . Among these, from the viewpoint of heat resistance, weather resistance, low shrinkage, and discoloration resistance, an anthrone resin is preferable.

<Optical semiconductor component>

The optical semiconductor element is a semiconductor wafer (illuminant) having a double heterostructure, which is surrounded by an n-type and p-type cladding layer to emit radiation (generally, UV or blue light in a white light LED). For example, an active layer of AlGaAs, AlGaInP, GaP or GaN is formed into a shape of a hexahedron having a length of about 0.5 mm. Then, in the case of the wire bonding form, it is connected to the lead portion through the lead wire.

<Opto semiconductor mounting substrate>

The optical semiconductor mounting substrate of the present invention is suitably used for the above-described semiconductor light-emitting device, and includes a substrate 14 and a reflector 12 having a cavity having a concave shape. The reflection system is formed of a resin composition containing a fibrous inorganic substance, and the reflector has an alignment region including a fibrous inorganic substance falling within a range of ±20 degrees with respect to a certain direction, and a non-alignment other than the alignment region In the thickness direction of the reflector formed by cutting in the outer shape of the optical semiconductor device, the thickness of the alignment region (12a) of the fibrous inorganic material is 50% or less with respect to the entire thickness of the reflector portion. . Further, the orientation angle of the fibrous inorganic substance was measured by the above method.

<Method of Manufacturing Optical Semiconductor Mounting Substrate>

An example of the method of manufacturing the optical semiconductor mounting substrate of the present invention will be described with reference to FIG. 2, but the method of manufacturing the optical semiconductor mounting substrate of the present invention is not limited to this example.

First, a resin composition for forming a reflector is formed on a substrate (metal frame or lead frame) 14 by transfer molding, compression molding, injection molding, or the like using a mold having a cavity space having a predetermined shape. A molded body having a plurality of reflectors having a predetermined shape. Injection molding is a preferred method because it is efficient to produce a plurality of reflectors at the same time. The molded body obtained in this manner can be subjected to a hardening process such as electron beam irradiation as needed. At this stage, the substrate on which the reflector is placed on the substrate is an optical semiconductor mounting substrate (Fig. 2(a)).

<Method of Manufacturing Semiconductor Light Emitting Device>

Next, an example of a method of manufacturing a semiconductor light-emitting device of the present invention will be described with reference to FIG. 2, but the method of manufacturing the semiconductor light-emitting device of the present invention is not limited to this example.

The optical semiconductor element 10 such as an LED chip prepared separately is placed on the optical semiconductor mounting substrate (Fig. 2(b)). At this time, in order to fix the optical semiconductor element 10, an adhesive or a bonding member can be used.

Next, as shown in FIG. 2(c), the lead 16 is provided to electrically connect the optical semiconductor element to the lead portion (electrode). At this time, in order to make the connection of the leads good, it is preferable to heat at 100 to 250 ° C for 5 to 20 minutes.

Thereafter, as shown in FIG. 2(d), the sealing body is filled with the sealing resin in the cavity 20 of the reflector to form the sealing portion 22.

Next, as shown in Fig. 2(e), the dicing is performed in the almost central portion (the broken line portion in Fig. 2) of the reflector by a method such as dicing. The semiconductor light emitting device shown in Fig. 1. A lens 18 can be disposed on the sealing portion 22 as needed. Moreover, in this case, the lens 18 can be downloaded in a state where the sealing resin is not cured, and then the sealing resin can be cured.

The semiconductor light-emitting device is connected to the wiring substrate 24, and the installer is shown in Fig. 2(f). The method of mounting the semiconductor light-emitting device on the wiring substrate is not particularly limited, but is preferably performed using molten solder. More specifically, solder is placed on the wiring substrate, and the package is placed on the solder, and heated by a reflow furnace to a melting temperature of 220 to 270 ° C for general solder to melt the solder and mount on the wiring substrate. Method of semiconductor light-emitting device (solder reflow method). The solder used in the above method of using solder can be used by a known person.

[Examples]

Next, the present invention will be described in further detail by way of examples, but the invention is not limited by this example.

(evaluation method)

The molded body produced in each of the examples and the comparative examples was irradiated with an electron beam at an acceleration voltage of 800 kV and an irradiation dose of 400 kGy to be cured. The molded body (a plurality of reflectors) after hardening was evaluated by the following method (1). Further, the molded body (a plurality of reflectors) and the separately prepared LED element and the electrode are fixed to the substrate by an adhesive, and the LED element and the electrode are connected by a lead, and then diced to form a semiconductor. Light-emitting device (LED package). The semiconductor light-emitting device was evaluated by the following methods (2) and (3).

(1) Average value of warpage

The formed object is allowed to stand on the fixed plate, and the gap meter is used to measure four. The warp of the corners is calculated and the average value is calculated.

(2) Direction of orientation of fibrous inorganic substances

The alignment angle of the fibrous substance was measured using an optical microscope (Axio Imager M1m, manufactured by Carl Zeiss Co., Ltd.) and an image processing software Image J according to the method described herein. Further, the ratio of the alignment region and the alignment region to the thickness of the entire reflector was determined. Further, the polishing was carried out at 10 μm each time.

(3) Tightness

The red check test was used to measure and determine the adhesion between each reflector and the substrate.

0.8 μL of red ink ("INK30R" manufactured by Pilot Corporation) was dropped on the cavity of the reflector, and the ink was leaked to the back surface after observation for 6 hours with a 50-fold optical microscope. The evaluation criteria are as follows.

○ No leakage even after 6 hours

X sees leakage 6 hours before the passage

Example 1

With respect to 100 parts by mass of polymethylpentene ("TPX RT18" manufactured by Mitsui Chemicals Co., Ltd., hereinafter referred to as "PMP"), 450 parts by mass of titanium oxide ("Ishihara Industry Co., Ltd.") -691", rutile type, an average particle diameter of 0.21 μm, hereinafter referred to as "TiO ₂ "), and 120 parts by mass of glass fiber ("PF70E-001" manufactured by Nitto Bose Co., Ltd.), and a fiber length of 70 μm. "GF"), 18 parts by mass of triallyl isocyanate (manufactured by Nippon Kasei Co., Ltd., hereinafter referred to as "TAIC"), and 5 parts by mass of IRGANOX 1010 (manufactured by BASF-JAPAN Co., Ltd.) 0.5 parts by mass of PEP-36 (manufactured by ADEKA Co., Ltd.), 0.5 parts by mass of SZ-2000 (manufactured by Seiko Chemical Co., Ltd.), and 7 parts by mass of dispersant ("KBM" manufactured by Shin-Etsu Chemical Co., Ltd. -3063"), kneaded to obtain a resin composition. Further, the kneading system was carried out using the POLYLAB system (batch type 2 axes).

Using this resin composition and a substrate (metal frame, lead frame) on which a copper plate was plated with a thickness of 0.25 mm, a molded body having a plurality of reflectors of 60 mm × 60 mm × 1 mm was obtained by insert injection molding. The molded body and the semiconductor light-emitting device produced by the above method were evaluated by the above methods (1) to (3). The evaluation results are shown in the first table.

Example 2~4

The production and evaluation of the molded body and the semiconductor light-emitting device were carried out in the same manner except that the injection molding conditions of Example 1 were appropriately changed. The results are shown in the first table.

Comparative example 1

The production and evaluation of the molded body and the semiconductor light-emitting device were carried out in the same manner except that the injection molding conditions of Example 1 were appropriately changed. The results are shown in the first table.

[Industrial availability]

According to the present invention, even if warpage is not generated even by heating or the like, even a semiconductor wafer having a reflector is formed. The optical device and the optical semiconductor mounting substrate have extremely high adhesion to the substrate.

Claims (16)

A semiconductor light-emitting device comprising at least a substrate, a reflector having a recessed cavity shape, and a semiconductor light-emitting device of an optical semiconductor element, wherein the reflective system is formed of a resin composition containing a fibrous inorganic substance And a portion including a region in which the fibrous inorganic substance has been aligned and an unaligned region in the thickness direction of the reflector, wherein the thickness of the region in which the fibrous inorganic substance has been aligned is relative to the entire thickness of the reflector portion It is 50% or less. A semiconductor light-emitting device comprising at least a substrate, a reflector having a recessed cavity shape, and a semiconductor light-emitting device of the optical semiconductor element, wherein the outer shape of the semiconductor light-emitting device is formed by cutting, the cutting surface The region in which the fibrous inorganic substance has been aligned and the non-aligned region are formed, and the thickness of the region in which the fibrous inorganic substance is aligned in any portion is 50% or less with respect to the entire thickness of the reflector portion. The semiconductor light-emitting device of claim 1 or 2, wherein the fibrous inorganic material has an aspect ratio of 2 to 50. The semiconductor light-emitting device according to any one of claims 1 to 3, wherein the fibrous inorganic material has a fiber length of 10 to 1000 μm. The semiconductor light-emitting device according to any one of claims 1 to 4, wherein the resin constituting the resin composition is a thermoplastic resin. The semiconductor light emitting device of any one of claims 1 to 5, wherein the optical semiconductor component is an LED component. The semiconductor light-emitting device of any one of claims 1 to 3, wherein the resin composition further comprises a white pigment. The semiconductor light-emitting device according to any one of claims 1 to 7, wherein the cavity of the reflector is filled with a sealing resin. The semiconductor light-emitting device according to any one of claims 1 to 8, wherein the resin composition further comprises a crosslinking treatment agent. An optical semiconductor mounting substrate comprising: a substrate and a photo-semiconductor mounting substrate having a reflector having a recessed cavity shape, wherein the reflective system is formed of a resin composition containing a fibrous inorganic substance, and the reflection is performed The thickness direction of the body includes a region in which the fibrous inorganic substance has been aligned and a region in which the fibrous component is not aligned, and the thickness of the region in which the fibrous inorganic material is aligned in the portion is 50% or less with respect to the entire thickness of the reflector portion. An optical semiconductor mounting substrate comprising an optical semiconductor mounting substrate having a substrate and a reflector having a recessed cavity shape, wherein the outer shape of the optical semiconductor mounting substrate is formed by cutting, the cutting surface is formed The region in which the fibrous inorganic substance has been aligned and the non-aligned region are formed, and the thickness of the region in which the fibrous inorganic substance is aligned in the arbitrary portion is 50% or less with respect to the entire thickness of the reflector portion. The optical semiconductor mounting substrate according to claim 10 or 11, wherein the fibrous inorganic material has an aspect ratio of 2 to 50. The optical semiconductor mounting substrate according to any one of claims 10 to 12, wherein the fibrous inorganic material has a fiber length of 10 to 1000 μm. The substrate for optical semiconductor mounting according to any one of claims 10 to 13, wherein the resin is a thermoplastic resin. The substrate for optical semiconductor mounting according to any one of claims 10 to 14, wherein the resin composition further comprises a white pigment. The optical semiconductor mounting substrate according to any one of claims 10 to 15, wherein the resin composition further comprises a crosslinking treatment agent.