TW201628776A - Grinding method of package substrate - Google Patents
Grinding method of package substrate Download PDFInfo
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- TW201628776A TW201628776A TW104128828A TW104128828A TW201628776A TW 201628776 A TW201628776 A TW 201628776A TW 104128828 A TW104128828 A TW 104128828A TW 104128828 A TW104128828 A TW 104128828A TW 201628776 A TW201628776 A TW 201628776A
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- package substrate
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- resin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Description
本發明是有關於一種可將封裝基板之密封樹脂層磨削為希望之厚度的封裝基板之磨削方法。 The present invention relates to a method of grinding a package substrate which can grind a sealing resin layer of a package substrate to a desired thickness.
使各自具有複數個電極之複數個元件的表面與電極基板(引線框架(lead frame))相對面並以預定間隔配置,並將配置於電極基板上之元件的背面以樹脂密封的CSP(Chip Size Package)或QFN(Quad Flat Non-leaded Package)等封裝基板藉由切削裝置分割為一個個的封裝元件,而分割出的封裝元件則廣泛地被利用於行動電話、個人電腦等各種電子機器上。 The surface of each of the plurality of elements having the plurality of electrodes is disposed opposite to the electrode substrate (lead frame) and disposed at a predetermined interval, and the back surface of the element disposed on the electrode substrate is sealed with a resin (Chip Size) A package substrate such as a package or a QFN (Quad Flat Non-leaded Package) is divided into individual package components by a cutting device, and the package components that are divided are widely used in various electronic devices such as mobile phones and personal computers.
近年來,伴隨著行動電話、個人電腦等電子機器的小型化、輕量化,一個個的封裝元件也趨於小型化、輕量化。作為達成小型化、輕量化的技術,已知有一種技術,是在將封裝基板分割成一個個封裝元件之前,將封裝基板背面之密封樹脂磨削至希望之厚度為止,然後以切削裝置分割為一個個封裝元件(參照例如日本專利特開2011-181641號公報及日本專利特開2014-015490號公報)。 In recent years, with the miniaturization and weight reduction of electronic devices such as mobile phones and personal computers, individual package components have also become smaller and lighter. As a technique for achieving miniaturization and weight reduction, a technique is known in which a sealing resin on a back surface of a package substrate is ground to a desired thickness before the package substrate is divided into individual package elements, and then divided into a cutting device by a cutting device. Each of the packaged components (see, for example, Japanese Patent Laid-Open No. 2011-181641 and Japanese Patent Laid-Open No. Hei No. 2014-015490).
專利文獻1:日本專利特開2011-181641號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2011-181641
專利文獻2:日本專利特開2014-015490號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2014-015490
然而,專利文獻1及專利文獻2所揭示之方法中,因為需要一種在將封裝基板分割成一個個封裝元件之前磨削封裝基板背面的磨削裝置,因此會有不符經濟效益的問題。 However, in the methods disclosed in Patent Document 1 and Patent Document 2, since a grinding device for grinding the back surface of the package substrate before dividing the package substrate into individual package members is required, there is a problem that it is not economical.
本發明是有鑒於此點而作成者,其主要目的在於提供一種即使沒有磨削裝置,也可以用一台切削裝置將封裝基板的密封樹脂層薄化至希望之厚度的封裝基板的磨削方法。 The present invention has been made in view of the above, and its main object is to provide a grinding method for thinning a sealing resin layer of a package substrate to a desired thickness by using one cutting device without a grinding device. .
根據本發明,提供一種封裝基板之磨削方法,是使用具有裝設於第1轉軸前端之圓盤狀的第1平磨削磨石之第1切削手段,及具有裝設於第2轉軸前端之圓盤狀的第2平磨削磨石之第2切削手段的切削裝置,而將封裝基板的密封樹脂層磨削至希望厚度為止,前述封裝基板是使具有複數個電極之複數個元件的表面面對電極基板,且複數個元件以預定間隔配置於該電極基板,並且具有以樹脂密封配設於該電極基板之複數個元件的背面之密封樹脂層,前述封 裝基板之磨削方法的特徵在於包含:保護構件黏貼步驟,將該封裝基板的表面側黏貼在一體地裝設於環狀框架之保護構件;保持步驟,以切削裝置之工作夾台吸引保持黏貼有該保護構件之該封裝基板的表面側;第1磨削步驟,實施該保持步驟後,使該第1平磨削磨石接觸該封裝基板之背面側的該密封樹脂層,並使該第1平磨削磨石和該封裝基板在磨削進給方向上相對移動,而將該封裝基板之該密封樹脂層磨削至第1厚度為止;及第2磨削步驟,實施該第1磨削步驟後,使該第2平磨削磨石接觸該封裝基板之背面側的該密封樹脂層,並使該第2平磨削磨石和該封裝基板在磨削進給方向上相對移動,而將該封裝基板之該密封樹脂層精磨削至希望的厚度為止。 According to the present invention, there is provided a method of grinding a package substrate, which comprises using a first cutting means having a disk-shaped first flat grinding stone attached to a tip end of a first rotating shaft, and having a front end mounted on a second rotating shaft In the cutting device of the second cutting means of the disk-shaped second flat grinding stone, the sealing resin layer of the package substrate is ground to a desired thickness, and the package substrate is a plurality of elements having a plurality of electrodes. The surface faces the electrode substrate, and the plurality of elements are disposed on the electrode substrate at a predetermined interval, and has a sealing resin layer that is resin-sealed to the back surface of the plurality of elements of the electrode substrate, the seal The method for grinding a substrate comprises: a step of adhering a protective member, attaching a surface side of the package substrate to a protective member integrally mounted on the annular frame; and maintaining a step of attracting and adhering with a working clamp of the cutting device a surface of the package substrate having the protective member; and in the first grinding step, the first flat grinding stone is brought into contact with the sealing resin layer on the back side of the package substrate, and the a flat grinding stone and the package substrate are relatively moved in a grinding feed direction to grind the sealing resin layer of the package substrate to a first thickness; and a second grinding step is performed to perform the first grinding After the step, the second flat grinding stone is brought into contact with the sealing resin layer on the back side of the package substrate, and the second flat grinding stone and the package substrate are relatively moved in the grinding feed direction, and The sealing resin layer of the package substrate is ground to a desired thickness.
較理想的是,前述圓盤狀之第1平磨削磨石及前述圓盤狀之第2平磨削磨石是由圓盤狀之輪基台、及以鍍鎳方式將磨粒固定於該輪基台之外周面的電鍍磨石層所構成。 Preferably, the disk-shaped first flat grinding stone and the disk-shaped second flat grinding stone are made of a disc-shaped wheel base and a nickel-plated method for fixing the abrasive grains to The plated stone layer on the outer surface of the wheel base is formed.
較理想的是,前述圓盤狀之第2平磨削磨石的平均磨粒直徑在前述圓盤狀之第1平磨削磨石的平均磨粒直徑以下。 Preferably, the average abrasive grain diameter of the disk-shaped second flat grinding stone is equal to or less than the average abrasive grain diameter of the disk-shaped first flat grinding stone.
本發明中,由於是構造成分別在雙轉軸(dual spindle)之切削裝置的轉軸上裝設圓盤狀之第1平磨削磨石和圓盤狀之第2平磨削磨石,並以第1平磨削磨石將密封樹 脂層粗磨削至第1厚度,以第2平磨削磨石將密封樹脂層經磨削至希望的厚度為止,因此即使沒有磨削裝置,也可以用一台切削裝置有效率地磨削封裝機板的密封樹脂層。 In the present invention, the first flat grinding stone and the disk-shaped second flat grinding stone are configured to be mounted on the rotating shaft of the cutting device of the dual spindle, respectively. 1 flat grinding stone will seal the tree The grease layer is roughly ground to the first thickness, and the sealing resin layer is ground to a desired thickness by the second flat grinding stone, so that even without the grinding device, the cutting device can be efficiently ground by a cutting device A sealing resin layer of the package board.
2‧‧‧切削裝置 2‧‧‧Cutting device
4‧‧‧基座 4‧‧‧Base
6‧‧‧工作夾台 6‧‧‧Working table
7‧‧‧夾具 7‧‧‧ fixture
8‧‧‧蛇腹件 8‧‧‧Bee belly
10‧‧‧晶圓盒載置台 10‧‧‧Facsimile Holder
11‧‧‧封裝基板 11‧‧‧Package substrate
11a‧‧‧封裝基板之表面 11a‧‧‧ Surface of the package substrate
11b‧‧‧封裝基板之背面 11b‧‧‧The back of the package substrate
12‧‧‧晶圓盒 12‧‧‧wafer box
13‧‧‧電極基板(引線框架) 13‧‧‧Electrode substrate (lead frame)
14‧‧‧第1柱部 14‧‧‧1st column
15‧‧‧外周剩餘區域 15‧‧‧ remaining area of the periphery
15a‧‧‧非元件區域 15a‧‧‧Non-component area
16A‧‧‧第1切削單元 16A‧‧‧1st cutting unit
16B‧‧‧第2切削單元 16B‧‧‧2nd cutting unit
17a、17b、17c‧‧‧元件區域 17a, 17b, 17c‧‧‧ component areas
19‧‧‧圓孔 19‧‧‧ round hole
21a‧‧‧第1分割預定線 21a‧‧‧1st dividing line
21b‧‧‧第2分割預定線 21b‧‧‧2nd dividing line
23‧‧‧元件形成部 23‧‧‧Component Formation Department
25‧‧‧電極 25‧‧‧Electrode
27‧‧‧元件 27‧‧‧ components
29‧‧‧密封樹脂層 29‧‧‧ sealing resin layer
34‧‧‧轉軸殼體 34‧‧‧Shaft housing
35‧‧‧DAF(Die Attach Fi1m) 35‧‧‧DAF (Die Attach Fi1m)
36、36B‧‧‧轉軸 36, 36B‧‧‧ shaft
38‧‧‧支架凸緣 38‧‧‧ bracket flange
40‧‧‧螺帽 40‧‧‧ Nuts
42‧‧‧固定螺帽 42‧‧‧Fixed nuts
44‧‧‧第1平磨削磨石 44‧‧‧1st flat grinding stone
44B‧‧‧第2平磨削磨石 44B‧‧‧2nd flat grinding stone
F‧‧‧環狀框架 F‧‧‧Ring frame
T‧‧‧切割膠帶 T‧‧‧ cutting tape
t1‧‧‧最終加工厚度 T1‧‧‧ final processing thickness
圖1是適合用來實施本發明之磨削方法的切削裝置的立體圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a cutting apparatus suitable for use in practicing the grinding method of the present invention.
圖2是第1切削單元的分解立體圖。 Fig. 2 is an exploded perspective view of the first cutting unit.
圖3是第1及第2切削單元之示意側面圖。 Fig. 3 is a schematic side view of the first and second cutting units.
圖4是封裝基板的平面圖。 4 is a plan view of a package substrate.
圖5是封裝基板的側面圖。 Fig. 5 is a side view of the package substrate.
圖6是顯示保持構件黏貼步驟的立體圖。 Fig. 6 is a perspective view showing a step of attaching a holding member.
圖7是用以說明粗磨削步驟的剖面圖。 Fig. 7 is a cross-sectional view for explaining a rough grinding step.
圖8是用以說明精磨削步驟的剖面圖。 Figure 8 is a cross-sectional view for explaining the fine grinding step.
以下,參照圖式詳細地說明本發明之實施形態。參照圖1,顯示了適合用來實施本發明的封裝基板之磨削方法的切削裝置2的立體圖。4是切削裝置2的基座,工作夾台6透過未圖示之切削進給機構可沿X軸方向來回運動地配置並且可旋轉地配置於該基座4。8是覆蓋切削進給機構的蛇腹件。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to Figure 1, a perspective view of a cutting apparatus 2 suitable for use in practicing the method of grinding a package substrate of the present invention is shown. 4 is a base of the cutting device 2, and the working chuck 6 is disposed to be movable back and forth in the X-axis direction through a cutting feed mechanism (not shown) and rotatably disposed on the base 4. 8 is a cover cutting feed mechanism Snake belly.
載置台10藉由圖未示之匣升降機(升降手段)而可在鉛直方向(Z軸方向)上升降地配置在基座4上。匣載置台10上載置有收容了被加工物的匣12。 The mounting table 10 is placed on the susceptor 4 so as to be vertically movable in the vertical direction (Z-axis direction) by a hoisting machine (elevating means) (not shown). The crucible 12 on which the workpiece is stored is placed on the crucible mounting table 10.
在基座4的後方豎立設置有門型形狀之第1柱部14,且第1切削單元16A及第2切削單元16B可在Y軸方向及Z軸方向上移動地安裝於該第1柱部14。第1及第2切削單元16A、16B包含裝設在被旋轉驅動的轉軸前端之圓盤狀的平磨削磨石44、44B。 The first column portion 14 having a gate shape is erected rearward of the susceptor 4, and the first cutting unit 16A and the second cutting unit 16B are movably attached to the first column portion in the Y-axis direction and the Z-axis direction. 14. The first and second cutting units 16A and 16B include disc-shaped flat grinding stones 44 and 44B that are attached to the tip end of the rotating shaft that is rotationally driven.
如圖2所示,第1切削單元16A包含可旋轉地收容在轉軸殼體34中的轉軸36,且轉軸36之前端部裝設有安裝凸緣38,並以螺帽40固定。進而,支架凸緣38上裝設有圓盤狀的平磨削磨石44,並以固定螺帽42固定。 As shown in FIG. 2, the first cutting unit 16A includes a rotating shaft 36 rotatably housed in the rotating shaft housing 34, and a mounting flange 38 is attached to the front end of the rotating shaft 36, and is fixed by a nut 40. Further, a disc-shaped flat grinding grindstone 44 is attached to the bracket flange 38 and fixed by a fixing nut 42.
如圖3之示意側面圖所示,第1切削單元16A之轉軸36的前端部裝設有圓盤狀之第1平磨削磨石44,第2切削單元16B之轉軸36B的前端部裝置有圓盤狀之第2平磨削磨石44B。本實施形態之切削裝置2是將第1平磨削磨石44和第2平磨削磨石44B對峙配置之對向雙軸式的切削裝置。 As shown in the schematic side view of Fig. 3, the front end portion of the rotating shaft 36 of the first cutting unit 16A is provided with a disk-shaped first flat grinding stone 44, and the front end portion of the rotating shaft 36B of the second cutting unit 16B is provided. The disc-shaped second flat grinding stone 44B. The cutting device 2 of the present embodiment is a counter-rotating device in which the first flat grinding stone 44 and the second flat grinding stone 44B are opposed to each other.
在此,第1平磨削磨石44及第2平磨削磨石44B都是透過以鍍鎳方式將鑽石磨粒電鍍於輪基台的外周面上而形成。較理想的是,第2平磨削磨石44B之鑽石磨粒的平均磨粒直徑在第1平磨削磨石44之鑽石磨粒的平均磨粒直徑以下。並且,本實施形態之第1及第2平磨削磨石44、44B的寬度為15mm。 Here, the first flat grinding stone 44 and the second flat grinding stone 44B are both formed by electroplating diamond abrasive grains on the outer peripheral surface of the wheel base by nickel plating. Preferably, the average abrasive grain diameter of the diamond abrasive grains of the second flat grinding stone 44B is equal to or less than the average abrasive grain diameter of the diamond abrasive grains of the first flat grinding stone 44. Further, the widths of the first and second flat grinding stones 44 and 44B of the present embodiment are 15 mm.
參照圖4,顯示了封裝基板11之平面圖。封裝基板11具有例如矩形之電極基板(引線框架)13,並在被電極基板13之外周剩餘區域15及非元件區域15a所圍繞的區域中存在有圖示之例的3個元件區域17a、17b、17c。 Referring to Figure 4, a plan view of the package substrate 11 is shown. The package substrate 11 has, for example, a rectangular electrode substrate (lead frame) 13, and three element regions 17a, 17b of the illustrated example are present in a region surrounded by the outer peripheral region 15 and the non-element region 15a of the electrode substrate 13. , 17c.
各元件區域17a、17b、17c中,形成藉由相互正交地縱橫設置的第1及第2分割預定線21a、21b所區劃出的複數個元件形成部23,且於一個個之元件形成部23形成有複數個電極25。 In each of the element regions 17a, 17b, and 17c, a plurality of element forming portions 23 partitioned by the first and second dividing lines 21a and 21b which are vertically and horizontally arranged perpendicularly and horizontally are formed, and the element forming portions are formed one by one. 23 is formed with a plurality of electrodes 25.
各電極25之間藉由模製於電極基板13上之樹脂而成絕緣。藉由切削第1分割預定線21a及第2分割預定線21b,各元件之電極25就會出現在其兩側。 Each of the electrodes 25 is insulated by a resin molded on the electrode substrate 13. By cutting the first dividing line 21a and the second dividing line 21b, the electrodes 25 of the respective elements appear on both sides.
如圖5所示,元件27隔著DAF(Die Attach Film)35黏著於元件區域17a、17b、17c之各元件形成部23的背面,並且設置於各元件27上的電極和電極25連接。 As shown in FIG. 5, the element 27 is adhered to the back surface of each of the element forming portions 23 of the element regions 17a, 17b, and 17c via a DAF (Die Attach Film) 35, and the electrodes provided on the respective elements 27 are connected to the electrode 25.
而且,元件區域17a、17b、17c之各元件27以樹脂密封,而於各元件區域17a、17b、17c之背面形成有密封樹脂層29。如圖2所示,電極基板13的四個角落形成有圓孔19。 Further, each of the elements 27 of the element regions 17a, 17b, and 17c is sealed with a resin, and a sealing resin layer 29 is formed on the back surface of each of the element regions 17a, 17b, and 17c. As shown in FIG. 2, the four corners of the electrode substrate 13 are formed with a circular hole 19.
針對使用了如上述而構成的切削裝置2之本發明的封裝基板之磨削方法進行說明。本發明的封裝基板之磨削方法中,首先,實施將該封裝基板11的表面11a側黏貼在一體地裝設於環狀框架F之保護構件上的保護構件黏貼步驟。 A grinding method of the package substrate of the present invention using the cutting device 2 configured as described above will be described. In the method of grinding a package substrate of the present invention, first, a step of adhering the surface of the package substrate 11 to the protective member of the protective member integrally formed on the annular frame F is performed.
亦即,如圖6所示地,在作為外周部裝設於環狀框架F上之保護構件的切割膠帶T上黏貼封裝基板11之表面11a側。藉此,封裝基板11之密封樹脂層29會露出。 That is, as shown in Fig. 6, the dicing tape T which is a protective member attached to the annular frame F as the outer peripheral portion is adhered to the surface 11a side of the package substrate 11. Thereby, the sealing resin layer 29 of the package substrate 11 is exposed.
實施保護構件黏貼步驟後,透過切割膠帶T以工作夾台6吸引保持黏貼有作為保護構件之切割膠帶T的封裝 基板11的表面11a側,並以夾具7將環狀框架F夾住固定。 After the protective member pasting step is performed, the dicing tape 6 is used to attract and hold the dicing tape T as a protective member through the dicing tape T. The surface 11a side of the substrate 11 is sandwiched and fixed by the clamp frame 7.
其次,如圖7所示,實施粗磨削步驟(第1磨削步驟):使裝設於第1切削單元16A之轉軸36且高速旋轉(例如20000rpm)之圓盤狀的第1平磨削磨石44接觸封裝基板11之背面11b側的密封樹脂層29,並使第1平磨削磨石44和保持於工作夾台6之封裝基板11以預定之加工進給速度在磨削進給方向(X軸方向)上相對移動,而以第1平磨削磨石44將封裝基板11之密封樹脂層29磨削至第1厚度為止。此處,所謂之第1厚度,意指比封裝基板11之最終加工厚度t1多厚出預定量的厚度。 Next, as shown in FIG. 7, a rough grinding step (first grinding step) is performed: a first flat grinding in a disk shape that is mounted on the rotating shaft 36 of the first cutting unit 16A and rotated at a high speed (for example, 20,000 rpm) The grindstone 44 contacts the sealing resin layer 29 on the back surface 11b side of the package substrate 11, and causes the first flat grinding grindstone 44 and the package substrate 11 held on the working chuck 6 to be fed at a predetermined processing feed rate. The sealing resin layer 29 of the package substrate 11 is ground to the first thickness by the first flat grinding stone 44 in the direction (X-axis direction). Here, the first thickness means a thickness which is thicker than a final processing thickness t1 of the package substrate 11 by a predetermined amount.
粗磨削步驟之磨削加工條件例如可設定如下。 The grinding processing conditions of the rough grinding step can be set, for example, as follows.
轉軸36之旋轉數:20000rpm Number of rotations of the shaft 36: 20000 rpm
加工進給速度(磨削進給速度):50mm/s Processing feed rate (grinding feed rate): 50mm/s
平磨削磨石44之分度量:7mm(重疊量為8mm) The measurement of the flat grinding stone 44: 7mm (the overlap is 8mm)
實施粗磨削步驟(第1磨削步驟)後,如圖8所示,實施精磨削步驟(第2磨削步驟):使裝設於第2切削單元16B之轉軸36B且高速旋轉(例如20000rpm)之圓盤狀的第2平磨削磨石44B接觸已實施過粗磨削步驟之封裝基板11的密封樹脂層29,並使平磨削磨石44B和保持於工作夾台6之封裝基板11以預定之加工進給速度在磨削進給方向(X軸方向)上相對移動,將封裝基板11之密封樹脂層29磨削至最終加工厚度t1。 After performing the rough grinding step (first grinding step), as shown in FIG. 8, a fine grinding step (second grinding step) is performed: the rotating shaft 36B attached to the second cutting unit 16B is rotated at a high speed (for example) The disk-shaped second flat grinding stone 44B of 20000 rpm) contacts the sealing resin layer 29 of the package substrate 11 on which the rough grinding step has been performed, and the flat grinding stone 44B and the package held in the working chuck 6 The substrate 11 is relatively moved in the grinding feed direction (X-axis direction) at a predetermined processing feed speed, and the sealing resin layer 29 of the package substrate 11 is ground to a final processed thickness t1.
精磨削步驟之加工條件,例如可設定如下。 The processing conditions of the fine grinding step can be set, for example, as follows.
轉軸旋轉數:20000rpm Rotary shaft rotation number: 20000rpm
加工進給速度(磨削進給速度):50mm/s Processing feed rate (grinding feed rate): 50mm/s
平磨削磨石44B之分度量:7mm(重疊量為8mm) The measurement of the flat grinding stone 44B: 7mm (the overlap is 8mm)
再者,本實施形態中,粗磨削步驟及精磨削步驟都是將平磨削磨石44、44B固定於X軸方向上,再以預定之加工進給速度使工作夾台6沿X軸方向加工進給而實施。 Furthermore, in the present embodiment, both the rough grinding step and the fine grinding step are to fix the flat grinding stone 44, 44B in the X-axis direction, and then the working clamping table 6 is along the X at a predetermined machining feed speed. It is implemented by machining in the axial direction.
由於是以平均磨粒直徑粗的第1平磨削磨石44先粗磨削至接近最終加工厚度t1後,再以平均磨粒直徑細的第2平磨削磨石44B將殘餘的厚度精磨削至最終加工厚度t1,因此可有效率地磨削密封樹脂層29,並可整齊地加工磨削面。 Since the first flat grinding stone 44 having a large average abrasive grain diameter is coarsely ground to a final working thickness t1, the second flat grinding stone 44B having a fine average abrasive diameter is used to refine the residual thickness. Grinding to the final processing thickness t1, the sealing resin layer 29 can be efficiently ground, and the ground surface can be processed neatly.
11a‧‧‧封裝基板之表面 11a‧‧‧ Surface of the package substrate
11b‧‧‧封裝基板之背面 11b‧‧‧The back of the package substrate
13‧‧‧電極基板(引線框架) 13‧‧‧Electrode substrate (lead frame)
16B‧‧‧第2切削單元 16B‧‧‧2nd cutting unit
27‧‧‧元件 27‧‧‧ components
29‧‧‧密封樹脂層 29‧‧‧ sealing resin layer
35‧‧‧DAF(Die Attach Film) 35‧‧‧DAF (Die Attach Film)
36B‧‧‧轉軸 36B‧‧‧ shaft
44B‧‧‧第2平磨削磨石 44B‧‧‧2nd flat grinding stone
T‧‧‧切割膠帶 T‧‧‧ cutting tape
t1‧‧‧最終加工厚度 T1‧‧‧ final processing thickness
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JP2014215188A JP6448302B2 (en) | 2014-10-22 | 2014-10-22 | Package substrate grinding method |
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KR101762192B1 (en) * | 2016-05-25 | 2017-07-27 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
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JP2004291157A (en) * | 2003-03-27 | 2004-10-21 | Jfe Ferrite Corp | Surface grinding apparatus and machining method using the same |
JP2006032471A (en) * | 2004-07-13 | 2006-02-02 | Disco Abrasive Syst Ltd | Manufacturing method of csp substrate |
JP2009130173A (en) * | 2007-11-26 | 2009-06-11 | Tokyo Seimitsu Co Ltd | Dicing apparatus |
JP2010017826A (en) * | 2008-07-14 | 2010-01-28 | Toyobo Co Ltd | Thin blade grinding wheel and dicing method |
JP5465042B2 (en) * | 2010-03-01 | 2014-04-09 | 株式会社ディスコ | Processing method of package substrate |
KR101347026B1 (en) * | 2012-03-21 | 2014-01-07 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
DE102012221273A1 (en) * | 2012-11-21 | 2014-05-22 | Hilti Aktiengesellschaft | Tool device with a spray device for dust binding |
CN103963174A (en) * | 2013-01-28 | 2014-08-06 | 陈少跃 | Cutting and grinding integrated machine |
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TWI665055B (en) | 2019-07-11 |
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