CN105551950B - Grinding method of packaging substrate - Google Patents
Grinding method of packaging substrate Download PDFInfo
- Publication number
- CN105551950B CN105551950B CN201510679594.8A CN201510679594A CN105551950B CN 105551950 B CN105551950 B CN 105551950B CN 201510679594 A CN201510679594 A CN 201510679594A CN 105551950 B CN105551950 B CN 105551950B
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- China
- Prior art keywords
- grinding
- package substrate
- resin layer
- sealing resin
- grinding stone
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title description 2
- 239000004575 stone Substances 0.000 claims abstract description 51
- 238000007789 sealing Methods 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 36
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000006061 abrasive grain Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 abstract description 2
- 238000003754 machining Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Provided is a grinding method for a package substrate, which can thin a sealing resin layer of the package substrate to a desired thickness by using one cutting device without a grinding device. The cutting apparatus includes a 1 st cutting member having a 1 st flat grinding stone and a 2 nd cutting member having a 2 nd flat grinding stone, the package substrate having a sealing resin layer sealing back surfaces of the plurality of devices with a resin, the method having: a protective member attaching step; a holding step; a 1 st grinding step of grinding the sealing resin layer to a 1 st thickness by bringing a 1 st flat grinding stone into contact with the sealing resin layer and relatively moving the 1 st flat grinding stone and the sealing substrate in a grinding feed direction after the holding step is performed; and a 2 nd grinding step of, after the 1 st grinding step, bringing a 2 nd flat grinding stone into contact with the sealing resin layer and relatively moving the 2 nd flat grinding stone and the sealing substrate in a grinding feed direction to finally grind the sealing resin layer to a desired thickness.
Description
Technical Field
The present invention relates to a grinding method of a package substrate, which grinds a sealing resin layer of the package substrate to a desired thickness.
Background
In a Package substrate such as a CSP (Chip Size Package) or a QFN (Quad Flat Non-leaded Package), a plurality of devices each having a plurality of electrodes are arranged with a predetermined gap between the front surface thereof and an electrode substrate (lead frame) so as to face each other, the back surfaces of the devices arranged on the electrode substrate are resin-sealed, and the Package substrate is divided into individual Package devices by a cutting device.
In recent years, as electronic devices such as mobile phones and personal computers have been reduced in size and weight, the size and thickness of each package device have been reduced. As a technique for realizing miniaturization and thinning, the following techniques are known: before the package substrate is divided into individual package devices, the sealing resin on the back surface of the package substrate is ground to a desired thickness and then divided into individual package devices by a cutting device (see, for example, japanese patent application laid-open nos. 2011-181641 and 2014-015490).
Patent document 1: japanese patent laid-open publication No. 2011-181641
Patent document 2: japanese patent laid-open publication No. 2014-015490
Disclosure of Invention
However, the methods disclosed in patent documents 1 and 2 require a grinding device for grinding the rear surface of the package substrate before the package substrate is divided into individual package devices, which is wasteful.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for grinding a package substrate, which can thin a sealing resin layer of the package substrate to a desired thickness by a single cutting device even without a grinding device.
According to the present invention, there is provided a grinding method of a package substrate, grinding a sealing resin layer of the package substrate to a desired thickness using a cutting device, wherein the cutting device comprises: a 1 st cutting member having a 1 st disc-shaped flat grinding stone attached to a tip end of a 1 st main shaft; and a 2 nd cutting member having a 2 nd flat grinding stone of a disk shape attached to a tip end of the 2 nd spindle, wherein the package substrate has a plurality of devices disposed on an electrode substrate with a predetermined interval therebetween with a front surface of the devices having a plurality of electrodes facing the electrode substrate, and the package substrate has the sealing resin layer sealing back surfaces of the devices disposed on the electrode substrate with a resin, the method for grinding the package substrate comprising the steps of: a protective member sticking step of sticking the front surface side of the package substrate to a protective member integrally mounted on the annular frame; a holding step of performing suction holding of the front surface side of the package substrate to which the protective member is attached by a chuck table of a cutting device; a 1 st grinding step of grinding the sealing resin layer of the package substrate to a 1 st thickness by bringing the 1 st flat grinding stone into contact with the sealing resin layer on the back surface side of the package substrate and relatively moving the 1 st flat grinding stone and the package substrate in a grinding feed direction after the holding step is performed; and a 2 nd grinding step of, after the 1 st grinding step is performed, bringing the 2 nd flat grinding stone into contact with the sealing resin layer on the back surface side of the package substrate, and relatively moving the 2 nd flat grinding stone and the package substrate in a grinding feed direction to finally grind the sealing resin layer of the package substrate to a desired thickness.
Preferably, the disk-shaped 1 st and 2 nd flat grinding stones are composed of a disk-shaped wheel base and a plating grinding stone layer in which abrasive grains are fixed to an outer peripheral surface of the wheel base by nickel plating.
Preferably, the average abrasive grain diameter of the disk-shaped 2 nd flat grinding stone is equal to or smaller than the average abrasive grain diameter of the disk-shaped 1 st flat grinding stone.
In the present invention, the disc-shaped 1 st flat grinding stone and the disc-shaped 2 nd flat grinding stone are mounted on the main shaft of the double-main-shaft cutting device, respectively, and the sealing resin layer is roughly ground to the 1 st thickness by the 1 st flat grinding stone and finally ground to a desired thickness by the 2 nd flat grinding stone, so that the sealing resin layer of the package substrate can be efficiently ground by one cutting device even without the grinding device.
Drawings
Fig. 1 is a perspective view of a cutting apparatus suitable for carrying out the grinding method of the present invention.
Fig. 2 is an exploded perspective view of the 1 st cutting unit.
Fig. 3 is a schematic side view of the 1 st and 2 nd cutting units.
Fig. 4 is a top view of a package substrate.
Fig. 5 is a side view of a package substrate.
Fig. 6 is a perspective view showing a holding member attaching step.
Fig. 7 is a cross-sectional view illustrating the rough grinding process.
Fig. 8 is a sectional view illustrating a final grinding process.
Description of the reference symbols
2: a cutting device; 6: a chuck table; 11: a package substrate; 16A: 1 st cutting unit; 16B: a 2 nd cutting unit; 29: a sealing resin layer; 44: 1, flat grinding a grinding stone; 44B: and 2, flat grinding of the grinding stone.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to fig. 1, there is shown a perspective view of a cutting apparatus 2 suitable for carrying out the grinding method of the package substrate of the present invention. Reference numeral 4 denotes a base of the cutting apparatus 2, and a chuck table 6 is disposed on the base 4 so as to be capable of reciprocating in the X-axis direction by a cutting feed mechanism not shown, and the chuck table 6 is disposed so as to be capable of rotating. And 8 is a bellows cover covering the cutting feed mechanism.
The cassette mounting table 10 is arranged on the base 4 so as to be vertically movable (Z-axis direction) by a cassette lifter (lifting means) not shown. A cassette 12 for storing a workpiece is placed on the cassette mounting table 10.
A 1 st column 14 having a gate shape is erected behind the base 4, and a 1 st cutting unit 16A and a 2 nd cutting unit 16B are attached to the 1 st column 14 so as to be movable in the Y-axis direction and the Z-axis direction. The 1 st and 2 nd cutting units 16A and 16B include disc-shaped flat grinding stones 44 and 44B attached to the tip of a main shaft that is rotationally driven.
As shown in fig. 2, the 1 st cutting unit 16A includes a spindle 36 rotatably housed in a spindle housing 34, and a mounting flange 38 is attached to a distal end portion of the spindle 36 and fixed by a nut 40. Further, a disk-shaped flat grinding stone 44 is attached to the attachment flange 38 and fixed by a fixing nut 42.
As shown in the schematic side view of fig. 3, a disk-shaped 1 st flat grinding stone 44 is attached to the tip end portion of the spindle 36 of the 1 st cutting unit 16A, and a disk-shaped 2 nd flat grinding stone 44B is attached to the tip end portion of the spindle 36B of the 2 nd cutting unit 16B. The cutting apparatus 2 of the present embodiment is a cutting apparatus having two opposing spindles, in which a 1 st flat grinding stone 44 and a 2 nd flat grinding stone 44B are disposed to face each other.
Here, the 1 st flat grinding stone 44 and the 2 nd flat grinding stone 44B are both formed by plating diamond abrasive grains on the outer peripheral surface of the wheel base by nickel plating. The average grain diameter of the diamond abrasive grains of the 2 nd flat grinding stone 44B is preferably not larger than the average grain diameter of the diamond abrasive grains of the 1 st flat grinding stone 44. Further, the width of the 1 st and 2 nd flat grinding stones 44 and 44B of the present embodiment is 15 mm.
Referring to fig. 4, a top view of package substrate 11 is shown. The package substrate 11 has, for example, a rectangular electrode substrate (lead frame) 13, and in a region surrounded by the outer peripheral surplus region 15 and the non-device region 15a of the electrode substrate 13, there are 3 device regions 17a, 17b, and 17c in the illustrated example.
A plurality of device forming portions 23 are formed in each of the device regions 17a, 17b, and 17c, the device forming portions 23 are defined by the 1 st and 2 nd lines to divide 21a and 21b arranged vertically and horizontally so as to be perpendicular to each other, and a plurality of electrodes 25 are formed in each of the device forming portions 23.
The electrodes 25 are insulated from the electrode substrate 13 by the molded resin. By cutting the 1 st line 21a and the 2 nd line 21b, the electrodes 25 of each device appear on both sides thereof.
As shown in fig. 5, devices 27 are bonded to the back surfaces of the device formation portions 23 of the device regions 17a, 17b, and 17c via DAF (DieAttach Film) 35, and electrodes of the devices 27 are connected to the electrodes 25.
The devices 27 in the device regions 17a, 17b, and 17c are sealed with resin, and a sealing resin layer 29 is formed on the back surface of the device regions 17a, 17b, and 17 c. As shown in fig. 4, circular holes 19 are formed at four corners of the electrode substrate 13.
Next, a method of grinding a package substrate of the present invention using the cutting device 2 configured as described above will be described. In the grinding method of the package substrate of the present invention, first, a protective member attaching step is performed to attach the front surface 11a side of the package substrate 11 to a protective member integrally attached to the annular frame F.
That is, as shown in fig. 6, the front surface 11a side of the package substrate 11 is bonded to a dicing tape T as a protective member, and the outer peripheral portion of the dicing tape T is attached to the ring-shaped frame F. Thereby, the sealing resin layer 29 of the package substrate 11 is exposed.
After the protective member attaching step is performed, the front surface 11a side of the package substrate 11 to which the dicing tape T as the protective member is attached is sucked and held with the dicing tape T interposed therebetween by the chuck table 6, and the ring frame F is clamped and fixed by the jig 7.
Next, as shown in fig. 7, a rough grinding step (1 st grinding step) is performed in which a disc-shaped 1 st flat grinding stone 44 mounted on the spindle 36 of the 1 st cutting unit 16A and rotating at a high speed (for example, 20000rpm) is brought into contact with the sealing resin layer 29 on the back surface 11b side of the package substrate 11, and the 1 st flat grinding stone 44 and the package substrate 11 held on the chuck table 6 are relatively moved in the grinding feed direction (X-axis direction) at a predetermined processing feed speed, and the sealing resin layer 29 of the package substrate 11 is ground to a 1 st thickness by the 1 st flat grinding stone 44. Here, the 1 st thickness is a thickness thicker than the final thickness t1 of the package substrate 11 by a predetermined amount.
The grinding conditions in the rough grinding step are, for example, as follows.
Rotation speed of the main shaft 36: 20000rpm
Machining feed speed (grinding feed speed): 50mm/s
Index amount of flat grinding grindstone 44: 7mm (overlap 8mm)
After the rough grinding step (1 st grinding step) is performed, as shown in fig. 8, a final grinding step (2 nd grinding step) is performed in which a disc-shaped 2 nd flat grinding stone 44B mounted on the spindle 36B of the 2 nd cutting unit 16B and rotating at a high speed (for example, 20000rpm) is brought into contact with the sealing resin layer 29 of the package substrate 11 subjected to the rough grinding step, and the flat grinding stone 44B and the package substrate 11 held on the chuck table 6 are relatively moved in the grinding feed direction (X-axis direction) at a predetermined processing feed speed to grind the sealing resin layer 29 of the package substrate 11 to a final thickness t 1.
The machining conditions in the final grinding step are, for example, as follows.
Main shaft rotating speed: 20000rpm
Machining feed speed (grinding feed speed): 50mm/s
Index amount of flat grinding grindstone 44B: 7mm (overlap 8mm)
In the present embodiment, both the rough grinding step and the final grinding step are performed by fixing the flat grinding stones 44 and 44B in the X-axis direction and feeding the chuck table 6 at a predetermined machining feed speed in the X-axis direction.
First, rough grinding is performed by the 1 st flat grinding stone 44 having a large average abrasive grain diameter until the thickness approaches the final thickness t1, and the remaining thickness is finally ground to the final thickness t1 by the 2 nd flat grinding stone 44B having a small average abrasive grain diameter, so that the sealing resin layer 29 can be efficiently ground and the ground surface can be finished beautifully.
Claims (3)
1. A grinding method of a sealing substrate, which grinds a sealing resin layer of the sealing substrate to a desired thickness using a cutting device, wherein the cutting device comprises: a 1 st cutting member having a 1 st disc-shaped flat grinding stone attached to a tip end of a 1 st main shaft; and a 2 nd cutting member having a 2 nd flat grinding stone of a disk shape attached to a tip end of the 2 nd spindle, wherein the package substrate has a plurality of devices disposed on an electrode substrate with a predetermined interval therebetween with a front surface of the devices having a plurality of electrodes facing the electrode substrate, and the package substrate has the sealing resin layer sealing back surfaces of the devices disposed on the electrode substrate with a resin, the method for grinding the package substrate comprising the steps of:
a protective member sticking step of sticking the front surface side of the package substrate to a protective member integrally mounted on the annular frame;
a holding step of performing suction holding of the front surface side of the package substrate to which the protective member is attached by a chuck table of a cutting device;
a 1 st grinding step of grinding the sealing resin layer of the package substrate to a 1 st thickness by bringing the 1 st flat grinding stone into contact with the sealing resin layer on the back surface side of the package substrate and relatively moving the 1 st flat grinding stone and the package substrate in a grinding feed direction after the holding step is performed; and
and a 2 nd grinding step of, after the 1 st grinding step is performed, bringing the 2 nd flat grinding stone into contact with the sealing resin layer on the back surface side of the package substrate, and relatively moving the 2 nd flat grinding stone and the package substrate in a grinding feed direction to finally grind the sealing resin layer of the package substrate to a desired thickness.
2. The grinding method of a package substrate according to claim 1,
the disk-shaped 1 st and 2 nd flat grinding stones are composed of a disk-shaped wheel base and an electroplated grinding stone layer in which abrasive grains are fixed to the outer peripheral surface of the wheel base by nickel plating.
3. The grinding method of a package substrate according to claim 1 or 2,
the average abrasive grain diameter of the disk-shaped 2 nd flat grinding stone is equal to or less than the average abrasive grain diameter of the disk-shaped 1 st flat grinding stone.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014215188A JP6448302B2 (en) | 2014-10-22 | 2014-10-22 | Package substrate grinding method |
| JP2014-215188 | 2014-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105551950A CN105551950A (en) | 2016-05-04 |
| CN105551950B true CN105551950B (en) | 2020-10-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510679594.8A Active CN105551950B (en) | 2014-10-22 | 2015-10-19 | Grinding method of packaging substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6448302B2 (en) |
| KR (1) | KR20160047390A (en) |
| CN (1) | CN105551950B (en) |
| TW (1) | TWI665055B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101759125B1 (en) * | 2016-05-25 | 2017-07-19 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
| KR101762192B1 (en) * | 2016-05-25 | 2017-07-27 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
| JP6680639B2 (en) * | 2016-07-27 | 2020-04-15 | 株式会社ディスコ | Processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1288799A (en) * | 1999-09-16 | 2001-03-28 | 住友特殊金属株式会社 | Method and apparatus for grinding magnetic components and method and apparatus for treatment of waste liquid |
| JP2004291157A (en) * | 2003-03-27 | 2004-10-21 | Jfe Ferrite Corp | Surface grinding apparatus and machining method using the same |
| JP2011181641A (en) * | 2010-03-01 | 2011-09-15 | Disco Corp | Method for processing package substrate |
| WO2014079834A1 (en) * | 2012-11-21 | 2014-05-30 | Hilti Aktiengesellschaft | Tool device with a spray arrangement for binding dust |
| CN103963174A (en) * | 2013-01-28 | 2014-08-06 | 陈少跃 | Cutting and grinding integrated machine |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5015493U (en) * | 1973-06-05 | 1975-02-18 | ||
| JP2006032471A (en) * | 2004-07-13 | 2006-02-02 | Disco Abrasive Syst Ltd | Manufacturing method of csp substrate |
| JP2009130173A (en) * | 2007-11-26 | 2009-06-11 | Tokyo Seimitsu Co Ltd | Dicing apparatus |
| JP2010017826A (en) * | 2008-07-14 | 2010-01-28 | Toyobo Co Ltd | Thin blade grinding wheel and dicing method |
| KR101347026B1 (en) * | 2012-03-21 | 2014-01-07 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
-
2014
- 2014-10-22 JP JP2014215188A patent/JP6448302B2/en active Active
-
2015
- 2015-09-01 TW TW104128828A patent/TWI665055B/en active
- 2015-09-24 KR KR1020150135535A patent/KR20160047390A/en not_active IP Right Cessation
- 2015-10-19 CN CN201510679594.8A patent/CN105551950B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1288799A (en) * | 1999-09-16 | 2001-03-28 | 住友特殊金属株式会社 | Method and apparatus for grinding magnetic components and method and apparatus for treatment of waste liquid |
| JP2004291157A (en) * | 2003-03-27 | 2004-10-21 | Jfe Ferrite Corp | Surface grinding apparatus and machining method using the same |
| JP2011181641A (en) * | 2010-03-01 | 2011-09-15 | Disco Corp | Method for processing package substrate |
| CN102194704A (en) * | 2010-03-01 | 2011-09-21 | 株式会社迪思科 | Package substrate processing method |
| WO2014079834A1 (en) * | 2012-11-21 | 2014-05-30 | Hilti Aktiengesellschaft | Tool device with a spray arrangement for binding dust |
| CN103963174A (en) * | 2013-01-28 | 2014-08-06 | 陈少跃 | Cutting and grinding integrated machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105551950A (en) | 2016-05-04 |
| TWI665055B (en) | 2019-07-11 |
| KR20160047390A (en) | 2016-05-02 |
| TW201628776A (en) | 2016-08-16 |
| JP6448302B2 (en) | 2019-01-09 |
| JP2016078218A (en) | 2016-05-16 |
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