TW201623681A - 氣體噴淋頭及沉積裝置 - Google Patents
氣體噴淋頭及沉積裝置 Download PDFInfo
- Publication number
- TW201623681A TW201623681A TW104128014A TW104128014A TW201623681A TW 201623681 A TW201623681 A TW 201623681A TW 104128014 A TW104128014 A TW 104128014A TW 104128014 A TW104128014 A TW 104128014A TW 201623681 A TW201623681 A TW 201623681A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- cooling
- cooling plate
- shower head
- venting
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 18
- 238000005507 spraying Methods 0.000 title abstract 4
- 238000001816 cooling Methods 0.000 claims abstract description 227
- 238000013022 venting Methods 0.000 claims abstract description 129
- 239000007789 gas Substances 0.000 claims description 372
- 238000006243 chemical reaction Methods 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 239000002826 coolant Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 53
- 239000010408 film Substances 0.000 description 41
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 238000000151 deposition Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000006227 byproduct Substances 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 238000009423 ventilation Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410838723.9A CN105779970B (zh) | 2014-12-26 | 气体喷淋头和沉积装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201623681A true TW201623681A (zh) | 2016-07-01 |
| TWI563115B TWI563115B (enExample) | 2016-12-21 |
Family
ID=56389130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104128014A TW201623681A (zh) | 2014-12-26 | 2015-08-26 | 氣體噴淋頭及沉積裝置 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201623681A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI891135B (zh) * | 2022-12-21 | 2025-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | 噴淋頭加熱裝置、氣相沉積設備及噴淋頭控溫方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101090998B (zh) * | 2004-08-02 | 2013-10-16 | 维高仪器股份有限公司 | 用于化学气相沉积反应器的多气体分配喷射器 |
| CN102345112B (zh) * | 2011-09-22 | 2013-08-21 | 中微半导体设备(上海)有限公司 | 一种半导体处理设备及其气体喷淋头冷却板 |
| CN103334092B (zh) * | 2013-06-13 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | 一种用于金属有机化学气相沉积反应器的管道冷却式气体分布装置 |
-
2015
- 2015-08-26 TW TW104128014A patent/TW201623681A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI891135B (zh) * | 2022-12-21 | 2025-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | 噴淋頭加熱裝置、氣相沉積設備及噴淋頭控溫方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI563115B (enExample) | 2016-12-21 |
| CN105779970A (zh) | 2016-07-20 |
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