TW201608746A - LED device with heat dissipation substrate - Google Patents
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本發明是有關於一種發光二極體裝置,特別是指一種設有散熱基材的發光二極體裝置。 The invention relates to a light-emitting diode device, in particular to a light-emitting diode device provided with a heat-dissipating substrate.
發光二極體是目前最重要的半導體照明元件,其具有發光效率佳、使用壽明長、反應速度快等優點。然而,在高功率、高亮度的應用中,發光二極體會產生熱積聚的問題,而影響發光效率及使用壽命。 The light-emitting diode is currently the most important semiconductor lighting component, and has the advantages of good luminous efficiency, long life, and fast reaction speed. However, in high-power, high-brightness applications, the light-emitting diodes cause heat build-up problems that affect luminous efficiency and lifetime.
因此,本發明之目的,即在提供一種能解決上述問題的發光二極體裝置。 Accordingly, it is an object of the present invention to provide a light emitting diode device that solves the above problems.
於是,本發明發光二極體裝置,包含一散熱基材、至少一個供電基板及至少一個發光二極體晶粒。供電基板設置於該散熱基材,並包括一透光板及一導電線路。導電線路設置於該透光板,且與該散熱基材分別位於該透光板的兩相反側。發光二極體晶粒設置於該供電基板,並與該導電線路形成電性連接。 Therefore, the light emitting diode device of the present invention comprises a heat dissipating substrate, at least one power supply substrate and at least one light emitting diode die. The power supply substrate is disposed on the heat dissipation substrate and includes a light transmission plate and a conductive line. The conductive circuit is disposed on the light-transmitting plate, and is disposed on opposite sides of the light-transmitting plate from the heat-dissipating substrate. The light emitting diode die is disposed on the power supply substrate and electrically connected to the conductive circuit.
在一實施態樣中,該供電基板還包括一反光層 ,該反光層設置於該透光板,且位於該透光板與該散熱基材之間。 In an embodiment, the power supply substrate further includes a reflective layer The light reflecting layer is disposed on the light transmissive plate and located between the light transmissive plate and the heat dissipating substrate.
較佳地,該發光二極體晶粒是以覆晶方式與該導電線路形成電性連接。 Preferably, the light emitting diode die is electrically connected to the conductive line in a flip chip manner.
在一實施態樣中,發光二極體裝置還包含一螢光結構,該螢光結構設置於該供電基板,並將該發光二極體晶粒包覆於內。其中,該螢光結構包括一第一螢光體及一第二螢光體,該第一螢光體設置於該供電基板與該發光二極體晶粒之間,該第二螢光體覆蓋該發光二極體晶粒。 In one embodiment, the LED device further includes a phosphor structure disposed on the power supply substrate and encapsulating the LED body. The fluorescent structure includes a first phosphor and a second phosphor. The first phosphor is disposed between the power supply substrate and the LED die, and the second phosphor is covered. The light emitting diode crystal grains.
在一實施態樣中,發光二極體裝置還包含一透鏡結構,該透鏡結構設置於該供電基板,並將該發光二極體晶粒覆蓋於內。 In one embodiment, the light emitting diode device further includes a lens structure disposed on the power supply substrate and covering the light emitting diode die.
在一實施態樣中,該供電基板的數量為多個,並分別設置於該散熱基材的兩相反側;該發光二極體晶粒的數量為多個,且分別設置於該供電基板。 In one embodiment, the number of the power supply substrates is plural, and are respectively disposed on opposite sides of the heat dissipation substrate; the number of the light emitting diodes is plural, and are respectively disposed on the power supply substrate.
較佳地,該透光板的材質選自硼玻璃、石英玻璃、藍寶石玻璃、碳化矽及其組成的群組。該透光板具有撓曲性。該散熱基材的主要材質為金屬。 Preferably, the material of the light transmissive plate is selected from the group consisting of borosilicate glass, quartz glass, sapphire glass, tantalum carbide and a combination thereof. The light transmissive plate has flexibility. The main material of the heat dissipation substrate is metal.
本發明的另一目的,在提出一種使用上述發光二極體裝置的照明燈具。 Another object of the present invention is to provide a lighting fixture using the above-described light emitting diode device.
於是,本發明照明燈具,包含一外殼結構及至少一如前述的發光二極體裝置。 Accordingly, the lighting fixture of the present invention comprises an outer casing structure and at least one light emitting diode device as described above.
較佳地,該外殼結構為能匯聚光線的燈杯或燈泡之燈殼。 Preferably, the outer casing structure is a lamp cup of a light cup or a bulb capable of collecting light.
本發明之功效在於:透過散熱基材的設置,可增進發光二極體裝置的散熱效果,而提升發光二極體裝置的亮度及使用壽命。此外,藉由不同的供電基板、發光二極體晶粒的配置方式,可調控發光二極體裝置的光學特性,而運用於不同應用方式。 The effect of the invention is that the heat dissipation effect of the light-emitting diode device can be improved by the arrangement of the heat-dissipating substrate, and the brightness and the service life of the light-emitting diode device are improved. In addition, the optical characteristics of the light-emitting diode device can be adjusted by different power supply substrates and arrangement patterns of the light-emitting diodes, and are applied to different application modes.
100‧‧‧發光二極體裝置 100‧‧‧Lighting diode device
101‧‧‧照明燈具 101‧‧‧Lighting fixtures
1‧‧‧散熱基材 1‧‧‧heating substrate
2‧‧‧供電基板 2‧‧‧Power supply substrate
21‧‧‧透光板 21‧‧‧Translucent plate
22‧‧‧導電線路 22‧‧‧Electrical circuit
23‧‧‧反光層 23‧‧‧Reflective layer
24‧‧‧焊錫 24‧‧‧ Solder
3‧‧‧發光二極體晶粒 3‧‧‧Light-emitting diode grains
31‧‧‧磊晶基板 31‧‧‧ epitaxial substrate
32‧‧‧第一半導體層 32‧‧‧First semiconductor layer
33‧‧‧第二半導體層 33‧‧‧Second semiconductor layer
34‧‧‧第一電極 34‧‧‧First electrode
35‧‧‧第二電極 35‧‧‧second electrode
4‧‧‧螢光結構 4‧‧‧Fluorescent structure
41‧‧‧第一螢光體 41‧‧‧First phosphor
42‧‧‧第二螢光體 42‧‧‧Secondary phosphor
5‧‧‧透鏡結構 5‧‧‧ lens structure
6‧‧‧外殼結構 6‧‧‧Shell structure
7‧‧‧電路模組 7‧‧‧ circuit module
本發明之其他的特徵及功效,將於參照圖式的實施例詳細說明中清楚地呈現,其中:圖1是一側視示意圖,說明本發明發光二極體裝置的第一實施例;圖2是一側視示意圖,說明本發明發光二極體裝置的第二實施例;圖3是一側視示意圖,說明本發明發光二極體裝置的第三實施例;圖4是一側視示意圖,說明本發明發光二極體裝置的第四實施例;圖5是一側視示意圖,說明第四實施例的變化實施態樣;及圖6與圖7各為側視示意圖,說明本發明發光二極體裝置應用為照明燈具的實施態樣。 The other features and advantages of the present invention will be apparent from the detailed description of the embodiments of the invention, wherein: Figure 1 is a side view showing a first embodiment of the light emitting diode device of the present invention; FIG. 3 is a side elevational view showing a third embodiment of the light emitting diode device of the present invention; FIG. 4 is a side view showing the second embodiment of the light emitting diode device of the present invention; A fourth embodiment of the light-emitting diode device of the present invention is illustrated; FIG. 5 is a side view showing a modified embodiment of the fourth embodiment; and FIGS. 6 and 7 are side views showing the light-emitting device of the present invention. The polar body device is applied as an embodiment of the lighting fixture.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖1,為本發明發光二極體裝置100的第一實施例。此處,發光二極體裝置100包含一散熱基材1、一供電基板2及一發光二極體晶粒3。 Referring to FIG. 1, a first embodiment of a light emitting diode device 100 of the present invention is shown. Here, the LED device 100 includes a heat dissipation substrate 1 , a power supply substrate 2 , and a light emitting diode die 3 .
散熱基材1以具有高熱傳導係數的材質製作,可將發光二極體晶粒3產生的熱傳導於外,以避免熱積聚的問題。本實施例中,散熱基材1可採用金屬等材質製作,但其具體的材質選用不以金屬為限。 The heat-dissipating substrate 1 is made of a material having a high heat transfer coefficient, and heat generated by the light-emitting diode crystal grains 3 can be conducted to avoid heat accumulation. In this embodiment, the heat dissipation substrate 1 can be made of a metal or the like, but the specific material is not limited to metal.
供電基板2設置於散熱基材1,並包括一透光板21、一導電線路22及反光層23。 The power supply substrate 2 is disposed on the heat dissipation substrate 1 and includes a light transmission plate 21, a conductive line 22, and a light reflecting layer 23.
透光板21以透明、絕緣的材質製作,供發光二極體晶粒3設置其上。本實施例中,透光板21的材質係選自硼玻璃、石英玻璃、藍寶石玻璃、碳化矽及其組成的群組,此等材質具有透光特性,且熱膨脹係數與發光二極體晶粒3相近,可避免結構應力之問題,而有利於發光二極體晶粒3的設置。然而,在不同的實施態樣中,透光板21的材質選用可視需要而調整,不以此處揭露的內容為限。 The light-transmitting plate 21 is made of a transparent, insulating material, and the light-emitting diode die 3 is placed thereon. In this embodiment, the material of the light-transmitting plate 21 is selected from the group consisting of borosilicate glass, quartz glass, sapphire glass, tantalum carbide, and the like, and the materials have light transmission characteristics, thermal expansion coefficient and light-emitting diode crystal grains. 3 is similar, which can avoid the problem of structural stress, and is beneficial to the arrangement of the light-emitting diode die 3. However, in different implementations, the material of the light-transmitting plate 21 is adjusted as needed, and is not limited to the contents disclosed herein.
導電線路22設置於透光板21,且與散熱基材1分別位於透光板21的兩相反側,其包括焊墊(pad)、延伸線路(圖未示)等結構,供與發光二極體晶粒3及外部電路(未圖示)形成電連接。 The conductive circuit 22 is disposed on the light-transmitting plate 21, and is disposed on opposite sides of the light-transmitting plate 21 from the heat-dissipating substrate 1, and includes a pad, an extended circuit (not shown), and the like. The bulk crystal 3 and an external circuit (not shown) form an electrical connection.
反光層23設置於透光板21,且位於透光板21與散熱基材1之間,其可選用銀、鋁等具高反射率的材質製作,或是採用具高反射率的光子晶體、多層式反射膜, 以提供反射光線、增進亮度之效果。 The reflective layer 23 is disposed on the light-transmitting plate 21 and located between the light-transmitting plate 21 and the heat-dissipating substrate 1 , and may be made of a material having high reflectivity such as silver or aluminum, or a photonic crystal having high reflectivity. Multi-layer reflective film, To provide the effect of reflecting light and enhancing brightness.
發光二極體晶粒3設置於供電基板2,並以覆晶(flip-chip)方式與導電線路22形成電性連接,其可視需要選用藍光、紅光、綠光、紫外光等各式發光二極體晶粒。 The light-emitting diode die 3 is disposed on the power supply substrate 2, and is electrically connected to the conductive circuit 22 in a flip-chip manner, and may be selected from various types such as blue light, red light, green light, and ultraviolet light. Diode grain.
具體來說,本實施例的發光二極體晶粒3包括一磊晶基板31、一第一半導體層32、一第二半導體層33、一第一電極34、一第二電極35,磊晶基板31、第一半導體層32與第二半導體層33係依序相互層疊,第一電極34、第二電極35則分別設置於第一半導體層32、第二半導體層33的表面,並藉由焊錫24與導電線路22形成電連接。 Specifically, the LED die 3 of the present embodiment includes an epitaxial substrate 31, a first semiconductor layer 32, a second semiconductor layer 33, a first electrode 34, and a second electrode 35. The substrate 31, the first semiconductor layer 32 and the second semiconductor layer 33 are sequentially stacked one on another, and the first electrode 34 and the second electrode 35 are respectively disposed on the surfaces of the first semiconductor layer 32 and the second semiconductor layer 33, and Solder 24 is electrically connected to conductive line 22.
根據上述內容,本實施例在發光二極體晶粒3未設置反射鏡(mirror)的結構設計下,其發出的光線是朝四面八方照射,且往透光板21照射的光線經反光層23的反射後又會向反方向照射,所以能提升發光二極體裝置100的整體亮度,並提供半周光(即散熱基材1以上的空間)的光源特性。此外,藉由散熱基材1的設置,可增進發光二極體裝置100在高功率使用狀態下的散熱效果,而提升其亮度表現及使用壽命。 According to the above, in the structure design in which the light-emitting diode die 3 is not provided with a mirror, the light emitted by the light-emitting diode 3 is irradiated in all directions, and the light irradiated to the light-transmitting plate 21 is reflected by the light-reflecting layer 23. After the reflection, the light is irradiated in the opposite direction, so that the overall brightness of the light-emitting diode device 100 can be improved, and the light source characteristics of the half-circumference light (that is, the space above the heat-dissipating substrate 1) can be provided. In addition, by the arrangement of the heat dissipation substrate 1, the heat dissipation effect of the LED device 100 in the high power use state can be improved, and the brightness performance and the service life are improved.
然而,要說明的是,本實施例中供電基板2及發光二極體晶粒3的數量雖是以一個為例進行說明,但在不同的實施態樣中,供電基板2、發光二極體晶粒3的數量可以配置為多個,而不以此處揭露的內容為限。此外,根據不同型態的散熱基材1的配置,發光二極體裝置100可提供不同的應用方式。例如,當散熱基材1的形狀為長條 狀,且其上設置多個供電基板2與發光二極體晶粒3時,發光二極體裝置100是以發光燈條的態樣實施。當然,本實施例之發光二極體裝置100的應用方式還可以有不同的實施態樣,不以此處的說明內容為限。 However, it should be noted that the number of the power supply substrate 2 and the light-emitting diode die 3 in the present embodiment is described by taking one example as an example, but in different implementations, the power supply substrate 2 and the light-emitting diode are described. The number of dies 3 can be configured in multiples without being limited to what is disclosed herein. In addition, the LED device 100 can provide different applications depending on the configuration of the heat dissipating substrate 1 of different types. For example, when the shape of the heat dissipation substrate 1 is a strip When a plurality of power supply substrates 2 and light-emitting diode crystal grains 3 are provided thereon, the light-emitting diode device 100 is implemented in the form of a light-emitting light bar. Of course, the application manner of the LED device 100 of the present embodiment may also have different implementation manners, and is not limited to the description herein.
參閱圖2,為本發明發光二極體裝置100的第二實施例。相較於第一實施例,本實施例的發光二極體裝置100還包含一螢光結構4及一透鏡結構5,且供電基板2未設置反光層。 Referring to FIG. 2, a second embodiment of a light emitting diode device 100 of the present invention is shown. Compared with the first embodiment, the LED device 100 of the present embodiment further includes a fluorescent structure 4 and a lens structure 5, and the power supply substrate 2 is not provided with a reflective layer.
螢光結構4可調整發光二極體裝置100的出光顏色,其設置於供電基板2上,並包括一第一螢光體41及一第二螢光體42。第一螢光體41設置於供電基板2與發光二極體晶粒3之間,是在發光二極體晶粒3裝設於供電基板2前,藉由印刷、點膠等技術製作。第二螢光體42將發光二極體晶粒3包覆於內,其是在發光二極體晶粒3裝設於供電基板2後製作。本實施例中,由於第一螢光體41與第二螢光體42共同配合,將發光二極體晶粒3完整地包覆於內,因此能確保發光二極體裝置100具有均勻穩定的出光特性。然而,在不同的實施態樣中,螢光結構4可以不同的方式實施,不限於此處揭露的內容。 The fluorescent structure 4 can adjust the color of the light emitted from the LED device 100, and is disposed on the power supply substrate 2 and includes a first phosphor 41 and a second phosphor 42. The first phosphor 41 is disposed between the power supply substrate 2 and the light-emitting diode die 3, and is fabricated by a technique such as printing or dispensing before the light-emitting diode die 3 is mounted on the power supply substrate 2. The second phosphor 42 covers the light-emitting diode crystal 3, and is formed after the light-emitting diode die 3 is mounted on the power supply substrate 2. In this embodiment, since the first phosphor 41 and the second phosphor 42 cooperate together, the LED die 3 is completely covered, thereby ensuring uniform and stable operation of the LED device 100. Light output characteristics. However, in various embodiments, the phosphor structure 4 can be implemented in different ways, and is not limited to what is disclosed herein.
透鏡結構5設置於供電基板2,並將發光二極體晶粒3覆蓋於內,其結構形狀會影響發光二極體裝置100的可視角(view angle)、出光效率等光學特性,屬於一次光學透鏡(first-order optical lens)之結構設計。 The lens structure 5 is disposed on the power supply substrate 2 and covers the light-emitting diode die 3 therein. The structure of the lens structure 5 affects the optical characteristics such as the viewing angle and the light-emitting efficiency of the LED device 100. The structural design of the first-order optical lens.
根據上述螢光結構4、透鏡結構5的實施方式,本實施例的發光二極體裝置100呈現不同於第一實施例的光學特性,但同樣能藉由散熱基材1增進散熱效果,而增進亮度及使用壽命表現。此外,若將本實施例的散熱基材1配置為多孔性的網狀結構(未圖示),則發光二極體晶粒3發出的光線穿透透光板21後,還能進一步穿過散熱基材1,而呈現出不同於第一實施例的全周光光學特性。 According to the embodiment of the fluorescent structure 4 and the lens structure 5, the light emitting diode device 100 of the present embodiment exhibits optical characteristics different from those of the first embodiment, but can also be improved by the heat dissipation substrate 1 to enhance the heat dissipation effect. Brightness and longevity performance. Further, when the heat dissipation substrate 1 of the present embodiment is disposed in a porous mesh structure (not shown), the light emitted from the light-emitting diode crystal 3 penetrates the light-transmitting plate 21 and can be further passed through. The substrate 1 is thermally dissipated to exhibit a full-perimeter optical characteristic different from that of the first embodiment.
參閱圖3,為本發明發光二極體裝置100的第三實施例。相較於第一實施例,本實施例的發光二極體裝置100係包含多個供電基板2及多個發光二極體晶粒3,且供電基板2係分別裝設於散熱基材1的兩相反側,而發光二極體晶粒3則分別設置於供電基板2上。據此,在第一實施例中發光二極體裝置100的半周光出光特性,在本實施例中轉變為由位於散熱基材1上、下兩側的發光二極體晶粒3所提供的全周光的出光特性。 Referring to FIG. 3, a third embodiment of the light emitting diode device 100 of the present invention is shown. Compared with the first embodiment, the LED device 100 of the present embodiment includes a plurality of power supply substrates 2 and a plurality of LED dies 3 , and the power supply substrate 2 is respectively mounted on the heat dissipation substrate 1 . On the opposite side, the light-emitting diode crystal grains 3 are respectively disposed on the power supply substrate 2. Accordingly, in the first embodiment, the half-circumferential light-emitting characteristics of the light-emitting diode device 100 are converted into the light-emitting diode crystal grains 3 provided on the upper and lower sides of the heat-dissipating substrate 1 in the present embodiment. The light-emitting characteristics of the full moonlight.
參閱圖4、圖5,為本發明發光二極體裝置100的第四實施例。相較於第三實施例,本實施例的散熱基材1可進一步採用具有撓曲性的材質製作,或者將其製作為彎曲結構(如圖4)、管狀結構(如圖5),並將供電基板2連同發光二極體晶粒3裝設其上,因而能提供不同的發光、照明應用方式。 Referring to FIG. 4 and FIG. 5, a fourth embodiment of the light-emitting diode device 100 of the present invention is shown. Compared with the third embodiment, the heat dissipation substrate 1 of the present embodiment can be further made of a material having flexibility, or can be made into a curved structure (as shown in FIG. 4) and a tubular structure (as shown in FIG. 5), and The power supply substrate 2, together with the light-emitting diode die 3, is mounted thereon, thereby providing different illumination and illumination applications.
參閱圖6、圖7,發光二極體裝置100除了前述 四種實施方式外,還可以進一步以照明燈具101的方式實施。具體來說,該照明燈具101的主要結構係包含一外殼結構6、一發光二極體裝置100及一電路模組7。 Referring to FIG. 6 and FIG. 7, the LED device 100 is in addition to the foregoing. In addition to the four embodiments, it can be further implemented in the manner of the lighting fixture 101. Specifically, the main structure of the lighting fixture 101 includes a housing structure 6, a light emitting diode device 100, and a circuit module 7.
在圖6中,照明燈具101的外殼結構6為能匯聚光線的燈杯,且發光二極體裝置100係設置於外殼結構6之內反射面的焦點上,因此發光二極體裝置100發出的光線能透過外殼結構6匯聚為平行光而照射於外,讓照明燈具101適合應用於車燈、探照燈、手電筒等照明應用。 In FIG. 6, the outer casing structure 6 of the lighting fixture 101 is a light cup capable of collecting light, and the light emitting diode device 100 is disposed at a focus of the reflecting surface of the outer casing structure 6, and thus the light emitting diode device 100 emits The light can be condensed into parallel light through the outer casing structure 6, and the lighting fixture 101 is suitable for lighting applications such as a lamp, a searchlight, a flashlight, and the like.
在圖7中,照明燈具101係應用於燈泡照明,其外殼結構6為燈泡之外殼,並以全周光類型的發光二極體裝置100作為光源,而能提供照明效果。 In Fig. 7, the lighting fixture 101 is applied to the bulb illumination, and the outer casing structure 6 is the outer casing of the bulb, and the illumination device is provided with the full-circumference type of the light-emitting diode device 100 as a light source.
綜上所述,本發明發光二極體裝置100藉由散熱基材1的設置,能有效增進發光二極體裝置100的散熱效果,而提升亮度及使用壽命。此外,藉由不同型態的散熱基材1的選用,以及相對應的供電基板2及發光二極體晶粒3的配置方式,可控制發光二極體裝置100為半周光或全周光的光學特性,並具有不同的應用型態。因此,本發明發光二極體裝置100確實能達成本發明的目的。 In summary, the arrangement of the heat-dissipating substrate 1 of the light-emitting diode device 100 of the present invention can effectively improve the heat dissipation effect of the light-emitting diode device 100, thereby improving brightness and service life. In addition, the selection of the heat dissipation substrate 1 of different types and the arrangement of the corresponding power supply substrate 2 and the light emitting diode die 3 can control the light emitting diode device 100 to be semi-circumferential or full-circumferential. Optical properties and have different application types. Therefore, the light-emitting diode device 100 of the present invention can achieve the object of the present invention.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and the patent specification of the present invention are still It is within the scope of the patent of the present invention.
100‧‧‧發光二極體裝置 100‧‧‧Lighting diode device
1‧‧‧散熱基材 1‧‧‧heating substrate
2‧‧‧供電基板 2‧‧‧Power supply substrate
21‧‧‧透光板 21‧‧‧Translucent plate
22‧‧‧導電線路 22‧‧‧Electrical circuit
23‧‧‧反光層 23‧‧‧Reflective layer
3‧‧‧發光二極體晶粒 3‧‧‧Light-emitting diode grains
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