TW201604327A - 具氧化銀表面之銀燒結劑的製造方法及其於藉由加壓燒結以連接組件之方法中的用途 - Google Patents

具氧化銀表面之銀燒結劑的製造方法及其於藉由加壓燒結以連接組件之方法中的用途 Download PDF

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TW201604327A
TW201604327A TW104115096A TW104115096A TW201604327A TW 201604327 A TW201604327 A TW 201604327A TW 104115096 A TW104115096 A TW 104115096A TW 104115096 A TW104115096 A TW 104115096A TW 201604327 A TW201604327 A TW 201604327A
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silver
sintering
components
silver oxide
metal
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TW104115096A
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English (en)
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麥克 沙佛
渥夫岡 史密特
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賀利氏德國有限責任兩合公司
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Publication of TW201604327A publication Critical patent/TW201604327A/zh

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
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    • B23K35/3006Ag as the principal constituent
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    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
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    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
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    • C25D11/34Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32
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Abstract

本發明係關於一種用於製造呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑之方法及其用途。

Description

具氧化銀表面之銀燒結劑的製造方法及其於藉由加壓燒結以連接組件之方法中的用途
本發明係關於具有氧化銀表面之銀燒結劑的製造方法及其於藉助加壓燒結以連接組件之方法中的用途。
本文所提及之金屬氧化物及氧化銀表面或金屬氧化物及氧化銀層各自為外部或面向外面之金屬氧化物及氧化銀表面及/或金屬氧化物及氧化銀層。提及燒結劑,特定而言,此亦可係關於覆蓋其整個外部表面且因此面向外面之氧化銀表面或氧化銀層。
US 2010/0195292 A1揭示具有提供有外部氧化銀層之銀電極之電子組件。氧化銀層可用於藉由燒結將電子組件直接連接至欲連接至其之表面,其中氧化銀還原為銀。
US 2008/160183 A1揭示燒結連接方法,其中可燒結成傳導層並包含經有機塗覆之銀粒子及氧化銀粒子的組合物係用於製造欲連接表面間之燒結連接。仍可燒結之組合物可以墨、膏糊或呈層狀丸粒形式燒結預成型體之施加形式存在。
EP 0 579 911 A2揭示用於製造基於銅之漿液澆鑄各向同性複合材料之方法。在此上下文中,將經混合漿液澆鑄至適宜基材上,燒製, 燒結,並藉助冷軋及回火步驟加工成塊狀帶。複合材料可用於製造電子組件。
使用金屬及/或藉由施加及乾燥自其製造之銀燒結膏糊或可燒結之燒結預成型體用於附接及電接觸電子組件(例如半導體晶體)並用於自其熱散逸為電子工業中所已知。因此,該金屬及/或銀燒結膏糊及銀預成型體係闡述於(例如)2014年1月17日期刊ELECTRONIC MATERIALS中由KIM S.SIOW授權之線上出版物「Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?」(DOI:10.1007/s11664-013-2967-3)中。關於金屬及/或銀燒結膏糊之專利文獻之實例包括WO2011/026623A1、EP2425920A1、EP2428293A1及EP2572814A1。通常,藉由印刷(例如網版或模版印刷)將該金屬及/或銀燒結膏糊施加至支撐基材上,若需要則乾燥,與電子組件一起構形,且然後經受燒結製程。不過渡通過液態,金屬及/或銀粒子在燒結製程期間藉由擴散變為連接,同時在基材與電子組件之間形成固體之電流傳導及熱傳導金屬及/或銀連接。
然而,如本申請人能夠確定,亦可在不利用金屬及/或銀燒結膏糊之情況下或在不直接使用其之情況下獲得在形成燒結連接的同時組件間之附接。令人驚訝的是,可使用根據下文所闡釋之本發明方法製造之呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑替代金屬及/或銀燒結膏糊。
根據本發明方法製造之銀燒結劑係具有氧化銀表面(即具有總表面或多個離散表面,各自呈氧化銀層形式)之層狀銀燒結體。因此,銀燒結劑係自由及/或以單一單獨部分形式存在之離散層狀銀燒結體,即包含該等氧化銀表面之離散及/或自由燒結銀層。層狀銀燒結體之厚度或層厚度係在(例如)10μm至300μm範圍內。
銀燒結劑之銀可為純銀或銀合金。合金包含(例如)>50wt.%銀 之分率。
如上文所提及,根據本發明方法製造之銀燒結劑為層狀銀燒結體,即呈層形式之燒結銀結構,換言之,自身不能再燒結之銀結構。特定而言,除上文所提及外部氧化銀表面以外,此類型之燒結銀結構不包含氧化銀,即其團塊中不包含氧化銀。此類型之層狀銀燒結體不應誤認為係上文所提及仍可燒結之燒結預成型體者。
呈具有氧化銀表面之層狀適度燒結(sobersintering)體形狀之銀燒結劑(下文亦簡稱為「銀燒結劑」或「層狀銀燒結劑」)可根據本發明方法藉由以下方式來製造:(1)藉助(例如)網版印刷、模版印刷或噴霧施加將銀燒結製劑施加至具有不能形成燒結連接之表面之支撐基材上,(2)在施加或較佳不施加機械壓力的同時後續燒結由此施加之銀燒結製劑,接著(3)使由此形成之層狀銀燒結體自支撐基材之表面脫離。若在此序列之製造步驟後藉助(例如)氣氛氧化在層狀銀燒結體表面上不生成氧化銀層或僅生成不足氧化銀層,(4)可出於在層狀銀燒結體之整個外部表面上或在其外部表面之各部分上製造或加強氧化銀層之目的添加下游氧化步驟。如下文所闡釋之氧化製程可在此上下文中使用。
因此,用於製造呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑之本發明方法,其包含以下步驟:(1)將銀燒結製劑施加至具有不能形成燒結連接之表面之支撐基材上;(2)燒結由此施加之銀燒結製劑;(3)使在步驟(2)中形成之層狀銀燒結體自支撐基材表面脫離;且(4)若適用,在步驟(3)後之氧化步驟期間在層狀銀燒結體之所有或一部分外部表面上製造或加強氧化銀層。
上文所提及之銀燒結膏糊為可用於製造此類型之層狀銀燒結體之銀燒結製劑之實例。
用於製造層狀銀燒結體之具有不能形成燒結連接之表面之適宜支撐基材包括(例如)氧化鋁陶瓷、鎳箔、聚醯亞胺膜、聚四氟乙烯膜及聚矽氧膜。熟習此項技術者易知在此上下文中具有無孔且足夠平滑之表面之平面支撐基材之選擇,無論選擇何種材料。
銀燒結製劑之施加(例如網版印刷、模版印刷或噴霧施加)以及燒結程序為熟習此項技術者所熟知,且不存在任何方法相關之特殊性,使得不需要詳細說明且在此上下文中應出於實例性目的參見上文所引用之文獻。同樣,自具有不能形成燒結連接之表面之支撐基材脫離不存在任何困難,此乃因由此形成之層狀銀燒結體在燒結製程期間基本上獨自脫離。
銀燒結劑可以使用者(例如用於藉助加壓燒結連接組件之方法之操作者)期望之格式製造,使得在該操作者之處所處未產生任何碎料形式之浪費。亦可方便地將銀燒結劑製成環狀物製品並將其遞送至使用者,例如仍位於支撐基材上或已自支撐基材脫離。環狀物製品可提供有預定破裂位點(例如穿孔),使得使用者容易並根據說明書來使用。在環狀物製品之情形下,捲繞商品為較佳遞送形式。
在任何情形下,銀燒結劑包含該等氧化銀表面,其可各自與組件之金屬接觸表面形成連接接觸表面。在此上下文中,能夠與組件之金屬接觸表面形成連接接觸表面之氧化銀表面可以離散氧化銀表面形式存在,即彼此劃定界限。
然而,其亦可以覆蓋銀燒結劑之一部分或所有表面之連續氧化銀層形式存在。
銀燒結劑之氧化銀表面較佳位於其前側及後側上,使得在用於藉助加壓燒結連接組件之方法中在其使用後所製造之配置具有夾心式 (sandwich)結構,即然後在其間配置之銀燒結劑之組件之配置之組件係位於銀燒結劑之相對側上
將外部或面向外面氧化銀層牢固連接至位於其下之銀。氧化銀層之厚度可為(例如)0.02μm至6μm。其可藉由在與空氣接觸時氧化來形成或其可藉助氧化劑或藉由未氧化、尚未氧化、僅少許氧化或或多或少氧化之銀表面之陽極氧化以化學方式製造或加強。如前一句所指示,已存在之薄氧化銀層可藉助(例如)陽極氧化來生成或加強。舉例而言,非氧化、部分氧化或最初氧化之銀表面可藉由陽極氧化來氧化,直至形成(例如)0.03μm至5μm厚之氧化銀層。提及銀表面,層厚度為(例如)0.05μm至1μm之氧化銀層可藉由陽極氧化來形成。
陽極氧化可藉由(例如)在適宜電解質水溶液中浸沒銀燒結劑、配置為陽極並在其表面上氧化來執行。適宜電解質水溶液包括(例如)碳酸鈉、碳酸氫鈉、氫氧化鉀或氫氧化鈉之5wt.%至10wt.%水溶液。陽極氧化可在在5伏特至20伏特範圍內之直流電壓下進行(例如)5秒至30秒。
本發明亦係關於根據本發明方法製造之銀燒結劑於用於連接組件之方法中之用途,其中提供至少兩個各自包含至少一個金屬接觸表面之組件及配置於組件間之銀燒結劑之配置並加壓燒結該配置,其中銀燒結劑之氧化銀表面及組件之金屬接觸表面各自形成連接接觸表面,且其中(I)在含有至少一種可氧化化合物之氣氛中實施加壓燒結及/或(II)在形成相應連接接觸表面之前向氧化銀表面提供至少一種可氧化有機化合物。
本文所用措辭「其中銀燒結劑之氧化銀表面及組件之金屬接觸表面各自形成連接接觸表面」明確地意欲包括銀燒結劑之氧化銀表面及組件之金屬接觸表面之僅表面部分形成連接接觸表面的彼等情形。
因此,該方法之實施例(I)包含以下步驟: (i)提供至少兩個各自具有金屬接觸表面之組件及呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑;(ii)提供至少兩個組件及配置於其間之銀燒結劑之配置,同時自銀燒結劑之各別氧化銀表面及相應組件之金屬接觸表面形成連接接觸表面;及(iii)配置在含有至少一種可氧化化合物之氣氛中之加壓燒結。
相比之下,該方法之實施例(II)包含以下步驟:(i)提供至少兩個各自具有金屬接觸表面之組件及呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑;(ii)提供具有至少一種可氧化有機化合物之氧化銀表面;(iii)提供至少兩個組件及配置於其間之銀燒結劑之配置,同時自銀燒結劑之相應氧化銀表面(其提供有至少一種可氧化有機化合物)及相應組件之金屬接觸表面形成連接接觸表面;及(iv)該配置之加壓燒結。
組合實施例(I)及(II)係可行的。
在該方法之實施例(I)及(II)二者中,連接至少兩個組件。在此上下文中,提供至少兩個各自包含金屬接觸表面之組件及7種配置於組件間呈具有2甲呋喃氧化物表面之層狀銀燒結體形式之燒結劑之配置,且以熟習此項技術者所已知之常用方式藉由施加機械壓力及升高之溫度來燒結該配置。
連接至少兩個組件應理解為意指將第一組件附接於第二組件上。在本發明範圍內,「於...上」應理解為僅意指藉助銀燒結劑將第一組件之金屬接觸表面連接至第二組件之金屬接觸表面,其中與組件或包含該等組件之配置之相對位置無關。
在本發明範圍內,術語組件較佳包含單一零件。較佳地,該等單一零件不能進一步拆卸。
根據具體實施例,術語組件係指在電子產品中使用之零件。因此,該等組件可為(例如)主動組件(例如半導體晶體,例如LED、二極體、IGBT、閘流體、MOSFET、電晶體、IC)、被動組件(例如DCB、引線框架、電阻器、電容器、線圈、感應器、憶阻器、夾子、冷卻體)、壓電陶瓷及帕耳貼(Peltier)元件。
欲連接之組件可為相同或不同組件。
該等組件各自具有一個金屬接觸表面,其中金屬接觸表面之金屬可為純金屬或金屬合金。合金包含(例如)>50wt.%之分率之各別金屬。
欲連接之組件之金屬接觸表面之金屬可相同或不同。較佳地,其係選自由銀、銅、鈀及該等金屬之合金組成之群。銀及銀合金尤佳較佳作為金屬接觸表面之金屬。
該(等)組件可由金屬組成或其金屬接觸表面可以(例如)熔敷金屬形式存在。其可係關於藉由(例如)自金屬燒結製劑進行氣相沈積、化學鍍鋅、電鍍或施加及後續燒結製造之熔敷金屬。上文提及之金屬及/或銀燒結膏糊為金屬燒結製劑之實例。
在無論如何不由該金屬組成之組件之情形下,金屬接觸表面之厚度可為100nm至200μm。
像銀燒結劑一般,欲連接之一個組件或所有組件之金屬接觸表面亦可包含金屬氧化物層。特定而言,該金屬氧化物層之金屬氧化物可為相應金屬接觸表面之金屬之氧化物。
該等組件係藉由加壓燒結藉助配置於其間之銀燒結劑彼此連接,即該等組件及位於其間之銀燒結劑係在不存在組件之金屬接觸表面及過渡為液相之銀燒結劑之銀的金屬之情況下藉由加熱並藉由施加機械壓力來彼此連接。
在該方法之實施例(I)中,加壓燒結在含有至少一種可氧化化合 物之氣氛中進行。適宜可氧化化合物之實例包括一氧化碳、氫及甲酸。該氣氛可由至少一種可氧化且氣態之化合物組成或其可含有後者與惰性氣體(特定而言例如氮及/或氬)之組合。較佳地,氣氛中之可氧化化合物之分率為1vol.%至30vol.%。
在該方法之實施例(II)中,銀燒結劑之氧化銀表面及若至少兩個組件中之至少一者之金屬接觸表面包含金屬氧化物層則較佳後者同樣在形成連接接觸表面之前提供有至少一種可氧化有機化合物(即一種或兩種或更多種之混合物)。
可氧化有機化合物較佳包含1個至50個、更佳2個至24個、甚至更佳6個至24個且仍更佳8個至20個碳原子並具有至少一個官能基。
較佳使用游離脂肪酸、脂肪酸鹽或脂肪酸酯作為可氧化有機化合物。游離脂肪酸、脂肪酸鹽及脂肪酸酯較佳不具支鏈。此外,游離脂肪酸、脂肪酸鹽及脂肪酸酯較佳飽和。
較佳脂肪酸鹽包括銨、單烷基銨、二烷基銨、三烷基銨、鋁、銅、鋰、鈉及鉀鹽。
烷基酯、特定而言甲基酯、乙基酯、丙基酯及丁基酯為較佳酯。
根據較佳實施例,游離脂肪酸、脂肪酸鹽或脂肪酸酯為具有8個至24個、更佳8個至18個碳原子之化合物。
較佳可氧化有機化合物包括山羊脂酸(辛酸)、羊脂酸(癸酸)、月桂酸(十二烷酸)、肉豆蔻酸(十四烷酸)、棕櫚酸(十六烷酸)、珠光子酸(十七烷酸)、硬脂酸(十八烷酸)、花生酸(花生脂酸/二十烷酸)、山俞酸(二十二烷酸)、木蠟酸(二十四烷酸)以及相應酯及鹽。
尤佳可氧化有機化合物包括十二烷酸、十八烷酸、硬脂酸鋁、硬脂酸銅、硬脂酸鈉、硬脂酸鉀、棕櫚酸鈉及棕櫚酸鉀。
為提供具有至少一種可氧化有機化合物之相應金屬氧化物及/或 氧化銀層,該至少一種可氧化有機化合物可在不進行稀釋之情況下(例如)施加至金屬氧化物及/或氧化銀層之表面作為有效物質或可自水性製劑或自存於有機溶劑中之製劑施加,接著在(例如)15℃至50℃之物體溫度下乾燥10分鐘至60分鐘之乾燥時期。關於施加模式,基本上沒有限制,例如可將金屬氧化物及/或氧化銀層浸入至少一種可氧化有機化合物之製劑中或可將至少一種可氧化有機化合物之製劑噴霧或塗刷至金屬氧化物及/或氧化銀層上。水性製劑或基於有機溶劑之製劑可為(例如)至少一種可氧化有機化合物之1wt.%至20wt.%溶液、分散液或懸浮液。
至少一種可氧化有機化合物之質量對欲提供或提供有至少一種可氧化有機化合物之氧化銀層之表面積的比率為(例如)每平方米之氧化銀表面0.0005g至10g之至少一種可氧化有機化合物。熟習此項技術者將基於氧化銀層之厚度選擇此比率,即如此之氧化物層之厚度愈高,熟習此項技術者將選擇之至少一種可氧化有機化合物之質量對欲提供有該至少一種可氧化有機化合物之氧化銀層之表面積的比率愈高。
為製造連接接觸表面,將組件各自藉由其金屬接觸表面置於銀燒結劑之提供有至少一種可氧化有機化合物之相應類似氧化物表面上。在此上下文中金屬接觸表面或其部分表面與相應氧化銀表面之重疊區域界定連接接觸表面。
最後,使至少兩個組件與位於其間之銀燒結劑之配置經受加壓燒結製程,該銀燒結劑包含提供有至少一種可氧化有機化合物之氧化銀表面。
在(例如)200℃至280℃之物體溫度下進行實際加壓燒結且製程壓力係在(例如)1MPa至小於40MPa、較佳5MPa至20MPa範圍內。燒結時間係在(例如)1分鐘至5分鐘範圍內。
若該程序僅僅在該方法之實施例(II)後進行,則加壓燒結可在不受任何具體限制、惟實施例(I)中普遍存在之氣氛不同之氣氛中進行。舉例而言,含有氧氣之氣氛或不含氧氣之氣氛可在實施例(II)中普遍存在。在本發明他範圍內,不含氧氣之氣氛將理解為意指氣氛、特定而言(例如)氮及/或氬之惰性氣體氣氛,其氧含量不超過500ppm、較佳不超過10ppm且甚至更佳不超過1ppm。
加壓燒結在適於加壓燒結之習用設備中進行,其中可設定上文提及之製程參數。
實例性實施例及應用實例1
使用模版印刷將以100μm之濕層厚度大小為10×10mm2之銀燒結膏糊(ASP 043-04P2,購自Heraeus Materials Technology)之層施加至呈聚四氟乙烯膜形式之支撐基材上,然後在循環空氣乾燥櫃中在250℃之物體溫度下將其燒結30min。
燒結產物小心地脫離自支撐基材使用吸量管以獲得自由層狀銀燒結體。
將10wt.%碳酸鈉水溶液置於不銹鋼容器中並將不銹鋼容器連接至10V電流電壓源之陰極。將電壓源之陽極連接至自由層狀銀燒結體且然後將後者浸沒於碳酸鈉溶液中30秒。
在將其取出後,利用去離子水沖洗由陽極氧化造成之自由層狀銀燒結體之變黑表面且然後乾燥。隨後,將一滴存於Exxsol D60中之2wt.%月桂酸溶液置於前側及後側之氧化銀表面上,均勻分佈,並在循環空氣加熱櫃中在70℃下乾燥。然後在相應DCB基材之金表面與IGBT之大小為10×10mm2之銀接觸表面之間連結由此提供有月桂酸之銀燒結體,且然後在燒結壓力下在250℃之物體溫度及20MPa之機械壓力下將由此製造之夾心式配置燒結120秒。
在燒結後,藉由測試抗剪強度來測定該接合。在此上下文中, 在20℃下利用剪切鏨以0.3mm/s之速率將組件剪掉。藉助荷重元(DAGE 2000裝置,由DAGE,Germany製造)量測該力。利用實例1所獲得之結果顯示於表1中。

Claims (16)

  1. 一種用於製造呈具有氧化銀表面之層狀銀燒結體形式之銀燒結劑的方法,其包含以下步驟:(1)將銀燒結製劑施加至具有不能形成燒結連接之表面之支撐基材上;(2)燒結由此施加之該銀燒結製劑;(3)使步驟(2)中形成之該層狀銀燒結體自該支撐基材之該表面脫離;及(4)若適用,在步驟(3)後之氧化步驟期間在該層狀銀燒結體之所有或一部分該外部表面上製造或加強氧化銀層。
  2. 如請求項1之方法,其中該層狀銀燒結體具有厚度在10μm至300μm範圍內之層。
  3. 如請求項1或2之方法,其中具有不能形成燒結連接之表面之該支撐基材係選自由氧化鋁陶瓷、鎳箔、聚醯亞胺膜、聚四氟乙烯膜及聚矽氧膜組成之群。
  4. 如前述請求項中任一項之方法,其中該銀燒結劑係以環狀物製品存在。
  5. 如前述請求項中任一項之方法,其中該銀燒結劑包含前側及後側,其各自包含氧化銀表面。
  6. 如前述請求項中任一項之方法,其中該氧化銀層或氧化銀表面係藉由與空氣接觸來形成或藉助氧化劑或藉由陽極氧化以化學方式製造或加強。
  7. 一種根據如前述請求項之方法製造之銀燒結劑在用於連接組件之方法中的用途,其中提供至少兩個各自包含至少一個金屬接 觸表面之組件及配置於該等組件間之該銀燒結劑之配置並加壓燒結該配置,其中該銀燒結劑之氧化銀表面及該等組件之該等金屬接觸表面各自形成連接接觸表面,且其中(I)該加壓燒結係在含有至少一種可氧化化合物之氣氛中實施及/或(II)在形成該相應連接接觸表面之前該等氧化銀表面提供有至少一種可氧化有機化合物。
  8. 如請求項7之用途,其中該等組件係在電子產品中使用之零件。
  9. 如請求項7或8之用途,其中欲連接之該等組件之該等金屬接觸表面之金屬相同或不同且選自由銀、銅、鈀及該等金屬之合金組成之群。
  10. 如請求項7至9中任一項之用途,其中該至少兩個組件中之至少一者之該金屬接觸表面包含金屬氧化物層。
  11. 如請求項10之用途,其中在形成該連接接觸表面之前該至少兩個組件中之該至少一者之該金屬氧化物層提供有至少一種可氧化有機化合物。
  12. 如請求項7至11中任一項之用途,其中該至少一種可氧化有機化合物包含1個至50個碳原子,且具有至少一個官能基。
  13. 如請求項7至10或12中任一項之用途,其中該至少一種可氧化有機化合物之質量對該相應氧化銀層之表面積之比率為每平方米氧化銀表面0.0005g至10g。
  14. 如請求項7至13中任一項之用途,其中該至少一種可氧化有機化合物選自游離脂肪酸、脂肪酸鹽及脂肪酸酯。
  15. 如請求項7至14中任一項之用途,其中自水性製劑或自於有機溶劑中之製劑將該至少一種可氧化有機化合物施加至該氧化銀層。
  16. 如請求項15之用途,其中該製劑為溶液、分散液或懸浮液。
TW104115096A 2014-07-28 2015-05-12 具氧化銀表面之銀燒結劑的製造方法及其於藉由加壓燒結以連接組件之方法中的用途 TW201604327A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI783938B (zh) * 2016-06-22 2022-11-21 日商積水化學工業股份有限公司 連接結構體、含金屬原子之粒子及連接用組成物

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863295B (zh) * 2022-12-31 2023-10-24 江苏富乐华功率半导体研究院有限公司 一种用于银烧结的复合焊片结构及其制备方法
CN117248197A (zh) * 2023-09-21 2023-12-19 江苏富乐华功率半导体研究院有限公司 一种表面具有微纳结构的银焊片制备方法
CN117334581A (zh) * 2023-09-28 2024-01-02 江苏富乐华功率半导体研究院有限公司 一种基于银烧结用局部氧化镀银覆铜基板的制备及应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811705A (ja) * 1981-07-16 1983-01-22 Matsushita Electric Ind Co Ltd 薄板の製造方法
DE4217531C1 (de) * 1992-05-27 1993-12-16 Wieland Werke Ag Verfahren zur Herstellung schlickergegossener isotroper Verbundwerkstoffe auf Kupferbasis mit geringem thermischem Ausdehnungskoeffizienten und hoher elektrischer Leitfähigkeit sowie deren Verwendung
KR100802329B1 (ko) * 2005-04-15 2008-02-13 주식회사 솔믹스 금속기지 복합체 형성방법 및 이를 이용하여 제조된 코팅층및 벌크
WO2008001518A1 (fr) * 2006-06-30 2008-01-03 Mitsubishi Materials Corporation Composition de fabrication d'une électrode dans une cellule solaire, procédé de fabrication de l'électrode, et cellule solaire utilisant une électrode obtenue par le procédé de fabrication
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
CN102292835B (zh) * 2009-01-23 2015-03-25 日亚化学工业株式会社 半导体装置及其制造方法
JP5156658B2 (ja) 2009-01-30 2013-03-06 株式会社日立製作所 Lsi用電子部材
JP2011014556A (ja) 2009-06-30 2011-01-20 Hitachi Ltd 半導体装置とその製造方法
DE102009040076A1 (de) 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit Oxidationsmittel
US8927433B2 (en) * 2009-12-18 2015-01-06 Electronics And Telecommunications Research Institute Conductive via hole and method for forming conductive via hole
EP2610023B1 (en) * 2010-08-27 2017-09-27 DOWA Electronics Materials Co., Ltd. Low-temperature sinterable silver nanoparticle composition and electronic component formed using that composition
DE102010044329A1 (de) * 2010-09-03 2012-03-08 Heraeus Materials Technology Gmbh & Co. Kg Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile
DE102010044326A1 (de) 2010-09-03 2012-03-08 Heraeus Materials Technology Gmbh & Co. Kg Verwendung von aliphatischen Kohlenwasserstoffen und Paraffinen als Lösemittel in Silbersinterpasten
WO2013018777A1 (ja) * 2011-08-03 2013-02-07 日立化成工業株式会社 組成物セット、導電性基板及びその製造方法並びに導電性接着材組成物
HUE028880T2 (en) 2011-09-20 2017-01-30 Heraeus Deutschland Gmbh & Co Kg Paste and process for connecting electronic components with a carrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI783938B (zh) * 2016-06-22 2022-11-21 日商積水化學工業股份有限公司 連接結構體、含金屬原子之粒子及連接用組成物

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