TW201543501A - 異向性導電膜及其製造方法 - Google Patents

異向性導電膜及其製造方法 Download PDF

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Publication number
TW201543501A
TW201543501A TW104104521A TW104104521A TW201543501A TW 201543501 A TW201543501 A TW 201543501A TW 104104521 A TW104104521 A TW 104104521A TW 104104521 A TW104104521 A TW 104104521A TW 201543501 A TW201543501 A TW 201543501A
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TW
Taiwan
Prior art keywords
adhesive layer
spacer
anisotropic conductive
conductive film
insulating adhesive
Prior art date
Application number
TW104104521A
Other languages
English (en)
Inventor
Yuta Araki
Tomoyuki Ishimatsu
Original Assignee
Dexerials Corp
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Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201543501A publication Critical patent/TW201543501A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206—Insulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/706—Anisotropic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
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    • C09J2301/1242—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape the opposite adhesive layers being different
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2471/00—Presence of polyether
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/29075—Plural core members
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    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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Abstract

異向性導電膜含有導電粒子與間隔件。間隔件排列於膜之寬度方向中央部。所謂膜之寬度方向中央部，係膜之全寬之20~80%。異向性導電膜之厚度方向之間隔件之高度大於5μm且小於75μm。此種異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層分散有導電粒子，於第1絕緣性接著層之第2絕緣性接著層側之表面規則地排列有間隔件。

Description

異向性導電膜及其製造方法
本發明係關於一種異向性導電膜及其製造方法。
於IC晶片之向玻璃基板等之覆晶構裝中廣泛使用有異向性導電膜。該情形時所適用之IC晶片大部分具有矩形形狀，並且於背面之對向之2邊之端部以固定間距沿著一條直線形成有多個凸塊，於IC晶片之背面中央部未形成有凸塊。因此，於異向性導電連接時存在IC晶片中央部向玻璃基板側撓曲之問題。若產生該撓曲，則於異向性導電連接時，難以均勻對所有凸塊壓入導電粒子，尤其是在沿著IC晶片之長邊之凸塊行之導電粒子之壓入容易變得不均勻。因此，為了消除此種問題，提出有於IC晶片之背面中央部設置虛設凸塊之方法(專利文獻1)，或使粒徑大於導電粒子之間隔件均勻地分散至異向性導電膜之方法(專利文獻2)。
先前技術文獻 專利文獻
專利文獻1：日本特開2005-203758號公報
專利文獻2：日本特開2000-323523號公報
然而，將虛設凸塊設置於IC晶片時，存在會導致IC晶片之製造步驟數增加，又，IC晶片之設計變更上之自由度降低之問題。又，於使間隔件均勻地分散至異向性導電膜之情形時，存在間隔件被夾在IC晶片之凸塊與玻璃基板之端子之間之情形，而存在無法取得導通之情形或導通可靠性降低之問題。
本發明之目的在於解決以上先前技術之問題，在不於IC晶片設置虛設凸塊，又，不使間隔件均勻地分散至異向性導電膜之情況下可解決於異向性導電連接時IC晶片之中央部向玻璃基板側撓曲之問題及因該撓曲有損導電粒子對各個凸塊之壓入之均勻性之問題。
本發明者發現藉由於異向性導電膜中，於IC晶片之凸塊不對向之區域選擇性地配置間隔件，可達成本發明之目的，從而完成了本發明。
即，本發明提供一種異向性導電膜，其係含有導電粒子與間隔件者，並且間隔件排列於該異向性導電膜之寬度方向中央部。
又，本發明提供以下態樣A、態樣B、態樣C、態樣D作為較佳之態樣。
(態樣A)
異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構 造，於第1絕緣性接著層分散有導電粒子，於第1絕緣性接著層之第2絕緣性接著層側之表面規則地排列有間隔件之態樣。
(態樣B)
異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層分散有導電粒子，於第2絕緣性接著層之第1絕緣性接著層側之表面規則地排列有間隔件之態樣。
(態樣C)
異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層之第2絕緣性接著層側之表面分別規則地排列有導電粒子與間隔件之態樣。
(態樣D)
異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1接著層之第2絕緣性接著層側之表面規則地排列有導電粒子，於第2接著層之第1絕緣性接著層側之表面規則地排列有間隔件之態樣。
進而，本發明提供一種異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之絕緣性接著層，而使間隔件轉接著於絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
又，本發明提供一種上述態樣A之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之分散有導 電粒子之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
又，本發明提供一種上述態樣B之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使間隔件轉接著於第2絕緣性接著層，進而積層構成異向性導電膜之分散有導電粒子之第1絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
本發明提供一種上述態樣C之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口且於其以外之部分形成有用以收納導電粒子之第2開口的轉印模具之該第1開口收納間隔件，繼而於第2開口收納導電粒子，於轉印模具之第1及第2開口形成面壓入構成異向性導電膜之分散有導電粒子的第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
進而，本發明提供一種上述態樣D之異向性導電膜之製造方法，係於形成有用以收納間隔件之第1開口的第1轉印模具之第1開口收納間隔件，於第1轉印模具之第1開口形成面壓入構成異向性導電膜之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置； 於形成有用以收納導電粒子之第2開口的第2轉印模具之第2開口收納導電粒子，於第2轉印模具之第2開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使導電粒子轉接著於第2絕緣性接著層，其中，該用以收納導電粒子之第2開口形成於相當於該異向性導電膜之寬度方向中央部以外之位置；將轉接著有間隔件之第1絕緣性接著層與轉接著有導電粒子之第2絕緣性接著層以間隔件與導電粒子成為內側之方式進行積層。
又，本發明提供一種連接構造體，其係利用上述異向性導電膜將第1電子零件異向性導電連接於第2電子零件而成。
進而，本發明提供一種連接方法，其係利用上述異向性導電膜將第1電子零件異向性導電連接於第2電子零件者， 其將異向性導電膜暫時貼附於第2電子零件，將第1電子零件搭載於暫時貼附之異向性導電膜，並自第1電子零件側進行熱壓接。
於本發明之異向性導電膜中，於其寬度方向中央部排列有間隔件。因此，可於異向性導電連接時抑制IC晶片產生撓曲之情況，因此，可不使初期導通值上升，並且可抑制短路之發生率。
1‧‧‧間隔件
2‧‧‧導電粒子
10‧‧‧絕緣性接著層
41‧‧‧第1絕緣性接著層
42‧‧‧第2絕緣性接著層
100‧‧‧異向性導電膜
A‧‧‧間隔件配置區域
圖1係本發明之異向性導電膜之剖視圖。
圖2係本發明之異向性導電膜之俯視圖。
圖3A係本發明之異向性導電膜之俯視圖。
圖3B係本發明之異向性導電膜之俯視圖。
圖3C係本發明之異向性導電膜之俯視圖。
圖3D係本發明之異向性導電膜之俯視圖。
圖3E係本發明之異向性導電膜之俯視圖。
圖3F係本發明之異向性導電膜之俯視圖。
圖4係本發明之異向性導電膜之剖視圖。
圖5係本發明之異向性導電膜之剖視圖。
圖6係本發明之異向性導電膜之剖視圖。
圖7係本發明之異向性導電膜之剖視圖。
以下，對本發明之異向性導電膜之例進行詳細說明。
<<異向性導電膜>>
如圖1所示，本發明之異向性導電膜100係於異向性導電膜100之膜之寬度方向中央部(即，間隔件配置區域A)排列有間隔件1者。通常，該異向性導電膜100具有於絕緣性接著層10中分散有導電粒子2之構造。
(間隔件配置區域A)
間隔件配置區域A係異向性導電膜之寬度方向中央部。為了實現確實之異向性導電連接且不使間隔件抵接於凸塊，該寬度方向中央部較佳為異向性導電膜之全寬之20%以上且80%以下之區域，更佳為30%以上且70%以下之區域。如圖2所示，該區域通常係沿著異向性導電膜100之長邊方向 (箭頭方向)連續設置。又，膜長邊方向之間隔件配置區域A之中心線較佳為與異向性導電膜之長邊方向平行。又，亦考慮到IC晶片之夾有凸塊行之區域(對應於間隔件配置區域A)並非IC晶片之中央而偏靠於左右任一者之情形，該膜長邊方向之間隔件配置區域A之中心線較佳為存在於距膜之寬度方向之端部為膜寬之20~50%之區域。
(間隔件1)
作為間隔件1，可使用氧化鋁粒子、氧化矽粒子、氧化鋅粒子、聚苯乙烯粒子等絕緣粒子。間隔件1之大小於將IC晶片之凸塊高度與配線之端子厚度之合計加上導電粒子之平均粒徑之30%以上且80%以下後之大小設為100之情形時，較佳為成為60~140之大小，更佳為成為80~120之大小。該情況係為了防止IC之長邊側之局部接觸，或應對IC之凸塊側表面之起伏。具體而言，較佳為大於5μm且小於75μm。
間隔件1之形狀可例示球狀、橢圓狀、圓錐狀、角錐狀、圓柱狀、角柱狀、針狀等，但若考慮到與導電粒子之重合難易度，則較佳為球狀或圓柱狀等具有曲線之形狀。又，具有曲線之部位較理想為與膜面相對向。其原因在於，於與導電粒子重疊之情形時，於異向性導電連接時容易消除該重疊。
作為間隔件1之高度(異向性導電膜之厚度方向之大小)，較佳為將IC晶片之凸塊高度與配線之端子厚度之合計加上導電粒子之平均粒徑之30%以上且80%以下後之大小。具體而言，較佳為大於5μm且小於75μm。
間隔件1之於異向性導電膜面上之面積佔有率較佳為2%以 上。又，間隔件1彼此之粒子間隔較佳為導電粒子2之大小之2倍以上。其原因在於，不會妨礙連接時之樹脂流動。
又，於間隔件1之形狀並非球狀之情形時，於在膜俯視方向上觀察之情形時間隔件1之最大長度之平均值較佳為導電粒子2之平均粒徑之10倍以下，更佳為5倍以下，尤佳為3倍以下。其原因在於，間隔件1位於樹脂流動相對最大之部位，故而不會抑制導電粒子2之過度流動。
作為間隔件1之排列之圖案，只要為排列於間隔件配置區域A且規則性之重複圖案，則可採用各種排列圖案。例如，可列舉直線狀、曲線狀(波狀)、摺線狀等。於間隔件1在面方向上具有異向性之情形(圓柱等之情形)時，藉由其所外切之虛線圓而表示排列之規則性。因此，異向性之方向亦可為隨機。
作為自俯視方向觀察間隔件1之情形時之較佳態樣，可列舉：如圖3A所示，沿著間隔件配置區域A之長邊方向以固定間距將粒子狀之間隔件1配置成一行之態樣；如圖3B所示，將長條之棒狀之間隔件1沿著膜長邊方向平行地配置之態樣；如圖3C所示，將微小棒狀之間隔件1以間隔件1之長邊方向成為與膜長邊方向平行之方式以特定間距進行配置之態樣；如圖3D所示，將微小棒狀之間隔件1以間隔件1之長邊方向與膜之長邊方向正交之方式以特定間距進行配置之態樣；如圖3E所示，將微小棒狀之間隔件1以間隔件1之長邊方向相對於膜之長邊方向成為隨機之配置之方式以特定間距(微小棒狀間隔件之外切圓(圖中為點線圓)之中心基準)進行配置之態樣；及如圖3F所示，以特定間距將球狀之間隔件1配置成兩行之態樣等，但並不限定於該等。作為間隔件1之配置位置，較理想 為存在於以位在IC晶片之端部之排列成線狀之凸塊行夾住之區域之中心附近。連接時之撓曲成為中心附近。凸塊行由於個數或行數、總面積於IC端部彼此間通常並不對稱，故而於間隔件1之膜平面上之較理想之位置未必為中心，若位於其附近，則可有助於撓曲之減少。
(異向性導電膜之較佳態樣)
以下，表示本發明之異向性導電膜之較佳態樣A~D，但本發明並不限定於該等。
「態樣A」
如圖4所示，態樣A係異向性導電膜100具有第1絕緣性接著層41與第2絕緣性接著層42之積層構造，於第1絕緣性接著層41分散有導電粒子2，於第1絕緣性接著層41之第2絕緣性接著層42側之表面規則地排列有間隔件1之態樣。
「態樣B」
如圖5所示，態樣B係異向性導電膜100具有第1絕緣性接著層41與第2絕緣性接著層42之積層構造，於第1絕緣性接著層41分散有導電粒子2，於第2絕緣性接著層42之第1絕緣性接著層41側之表面規則地排列有間隔件之態樣。
「態樣C」
如圖6所示，態樣C係異向性導電膜100具有第1絕緣性接著層41與第2絕緣性接著層42之積層構造，於第1絕緣性接著層41之第2絕緣性接著層42側之表面分別規則地排列有導電粒子2與間隔件1之態樣。
「態樣D」
如圖7所示，態樣D係異向性導電膜100具有第1絕緣性接著層41與第2絕緣性接著層42之積層構造，於第1絕緣性接著層之第2絕緣性接著層側之表面規則地排列有導電粒子，於第2絕緣性接著層之第1絕緣性接著層側之表面規則地排列有間隔件之態樣。
再者，於態樣A、態樣B、態樣C、態樣D之各態樣中，存在導電粒子2與間隔件1於異向性導電膜100之厚度方向上重疊之情形。即便於此種情形時，藉由異向性導電連接時之加壓及樹脂流動，此種重疊通常亦會被消除，因此於實際使用上幾乎不會產生問題，但於自異向性導電連接方向觀察間隔件1時，若與導電粒子2重疊之面積變得過大，則擔憂於異向性導電連接時無法徹底消除重疊，因此導電粒子2之重疊面積較佳為未達50%，更佳為30%以下。
<導電粒子2>
作為導電粒子2，可自先前公知之異向性導電膜所使用之導電粒子中適當選擇。例如可列舉鎳、鈷、銀、銅、金、鈀等金屬粒子、金屬被覆樹脂粒子等。亦可併用2種以上。
作為導電粒子2之平均粒徑，為了因應配線高度之不均，又，為了抑制導通電阻之上升且抑制短路之發生，較佳為1~10μm，更佳為2~6μm。平均粒徑可利用一般之粒度分佈測定裝置進行測定。
為了抑制導電粒子捕捉效率之降低且抑制短路之發生，導電粒子2於異向性導電膜100中之存在量較佳為每1平方毫米為50個以上且100000個以下，更佳為200個以上且70000個以下。再者，於排列有導電粒子之情形時，較佳為每1平方毫米為50個以上且40000個以下。
「導電粒子2之規則性圖案之排列」
所謂導電粒子2之規則性圖案之排列中之規則性圖案，意指於自異向性導電膜100之表面透視導電粒子2時可識別之導電粒子2存在於長方形格子、正方格子、六方格子、菱形格子等格子點之排列。構成該等格子之假想線不僅為直線，亦可為曲線、摺線。
為了實現異向性連接之穩定化，以規則性圖案進行排列之導電粒子2相對於全部導電粒子2之比率以導電粒子數基準計較佳為90%以上。該比率之測定可利用光學顯微鏡等而進行。
又，導電粒子2之粒子間距離、即導電粒子間之最短距離較佳為導電粒子2之平均粒徑之0.5倍以上，更佳為1倍以上且5倍以下。
<絕緣性接著層10、第1絕緣性接著層41、第2絕緣性接著層42(以下，有簡稱為絕緣性接著層之情形)>
構成本發明之異向性導電膜100之絕緣性接著層(10、41、42)可適當採用公知之異向性導電性膜所使用之絕緣性樹脂層。例如，藉由以較佳為聚合率成為50%以上且100%以下之方式使熱或光陽離子、陰離子或者自由基聚合性樹脂等熱或光聚合性樹脂進行聚合，而可將導電粒子固定化，又，即便於異向性導電連接時被加熱，樹脂亦難以流動，因此可較大地抑制短路之發生。因此，可使導通可靠性與絕緣性提高，且亦使構裝粒子捕捉效率提高。尤佳之絕緣性接著層係使含有丙烯酸酯化合物與光自由基聚合起始劑之光自由基聚合性樹脂層進行光自由基聚合而成的光自由基聚合樹脂層。以下，對絕緣性接著層為光自由基聚合樹脂層之情形進行說明。
(丙烯酸酯化合物)
作為成為丙烯酸酯單元之丙烯酸酯化合物，可使用先前公知之光自由基聚合性丙烯酸酯。例如，可使用單官能(甲基)丙烯酸酯(此處，(甲基)丙烯酸酯包括丙烯酸酯與甲基丙烯酸酯)、二官能以上之多官能(甲基)丙烯酸酯。於本發明中，為了使接著劑成為熱硬化性，較佳為丙烯酸系單體之至少一部分使用多官能(甲基)丙烯酸酯。
絕緣性接著層中之丙烯酸酯化合物之含量就黏度與硬化收縮率之平衡性之觀點而言，較佳為2質量%以上且70質量%以下，更佳為10質量%以上且50質量%以下。
(光自由基聚合起始劑)
作為光自由基聚合起始劑，自可公知之光自由基聚合起始劑中適當選擇而使用。例如，可列舉苯乙酮系光聚合起始劑、苯偶醯縮酮系光聚合起始劑、磷系光聚合起始劑等。
光自由基聚合起始劑之使用量若相對於丙烯酸酯化合物100質量份過少，則光自由基聚合不會充分進行，若過多，則會成為剛性降低之原因，因此較佳為0.1質量份以上且25質量份以下，更佳為0.5質量份以上且15質量份以下。
亦可視需要於絕緣性接著層中併用苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺酯(urethane)樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等膜形成樹脂。於下述絕緣性接著層中亦可同樣地併用。
若絕緣性接著層之層厚過薄，則有構裝導電粒子捕捉效率降低之傾向，若過厚，則有導通電阻增高之傾向，因此較佳為1μm以上且 15μm以下，更佳為2~10μm。
亦可視需要使絕緣性接著層含有環氧化合物與熱或光陽離子或者陰離子聚合起始劑。藉此，可提高層間剝離強度。
(環氧化合物)
於絕緣性接著層為含有環氧化合物與熱或光陽離子或者陰離子聚合起始劑之熱或光陽離子或者陰離子聚合性樹脂層之情形時，作為環氧化合物，可較佳地列舉於分子內具有2個以上之環氧基之化合物或者樹脂。該等可為液狀，亦可為固體狀。
(熱陽離子聚合起始劑)
作為熱陽離子聚合起始劑，可採用公知者作為環氧化合物之熱陽離子聚合起始劑，例如為藉由熱而產生可使陽離子聚合性化合物進行陽離子聚合之酸者，可使用公知之碘鹽、鋶鹽、鏻鹽、二茂鐵類等，可較佳地使用對溫度顯示出良好之潛伏性之芳香族鋶鹽。
熱陽離子聚合起始劑之調配量若過少，則有成為硬化不良之傾向，若過多，則有製品壽命降低之傾向，因此相對於環氧化合物100質量份，較佳為2質量份以上且60質量份以下，更佳為5質量份以上且40質量份以下。
(熱陰離子聚合起始劑)
作為熱陰離子聚合起始劑，可採用公知者作為環氧化合物之熱陰離子聚合起始劑，例如為藉由熱而產生可使陰離子聚合性化合物進行陰離子聚合之鹼者，可使用公知之脂肪族胺系化合物、芳香族胺系化合物、二級或三級胺系化合物、咪唑系化合物、聚硫醇系化合物、三氟化硼-胺錯合物、 二氰二胺、有機酸醯肼等，可較佳地使用對溫度顯示出良好之潛伏性之膠囊化咪唑系化合物。
熱陰離子聚合起始劑之調配量若過少，則有成為硬化不良之傾向，若過多，則有製品壽命降低之傾向，因此相對於環氧化合物100質量份，較佳為2質量份以上且60質量份以下，更佳為5質量份以上且40質量份以下。
(光陽離子聚合起始劑及光陰離子聚合起始劑)
作為環氧化合物用之光陽離子聚合起始劑或光陰離子聚合起始劑，可適當使用公知者。
<<異向性導電膜之製造方法>>
其次，對本發明之異向性導電膜之製造方法之一例簡單地進行說明。
(製造方法1)
含有導電粒子與間隔件，並且間隔件排列於該異向性導電膜之寬度方向中央部之異向性導電膜可藉由如下方式製造：於形成有用於收納間隔件之第1開口的轉印模具之該開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之絕緣性接著層，而使間隔件轉接著於絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
(製造方法2)
上述態樣A之異向性導電膜可藉由如下方式製造：於形成有用於收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之分散有導電粒子之第1絕緣性接著 層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
(製造方法3)
上述態樣B之異向性導電膜可藉由如下方式製造：於形成有用以收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使間隔件轉接著於第2絕緣性接著層，進而積層構成異向性導電膜之分散有導電粒子之第1絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
(製造方法4)
上述態樣C之異向性導電膜可藉由如下方式製造：於形成有用於收納間隔件之第1開口且於其以外之部分形成有用以收納導電粒子之第2開口的轉印模具之該第1開口收納間隔件，繼而於第2開口收納導電粒子，於轉印模具之第1及第2開口形成面壓入構成異向性導電膜之分散有導電粒子之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
(製造方法5)
上述態樣D之異向性導電膜可藉由如下方式製造：於形成有用以收納間隔件之第1開口的第1轉印模具之第1開口收納間隔件，於第1轉印模具之第1開口形成面壓入構成異向性導電膜之第1 絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置；於形成有用以收納導電粒子之第2開口的第2轉印模具之第2開口收納導電粒子，於第2轉印模具之第2開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使導電粒子轉接著於第2絕緣性接著層，其中，該用以收納導電粒子之第2開口形成於相當於該異向性導電膜之寬度方向中央部以外之位置；將轉接著有間隔件之第1絕緣性接著層與轉接著有導電粒子之第2絕緣性接著層以間隔件與導電粒子成為內側之方式進行積層。
<轉印模具、第1轉印模具、第2轉印模具(以下，有簡稱為轉印模具之情形)>
於該等製造方法中，作為轉印模具，例如係藉由光微影法等公知之開口形成方法對矽、各種陶瓷、玻璃、不鏽鋼絲等金屬等無機材料或各種樹脂等有機材料等形成開口者。此種轉印模具可採用板狀、輥狀等形狀。
作為轉印模具之第1開口以及第2開口之形狀，分別可例示圓柱狀、四角柱等多角柱狀、四角錐等角錐狀等。
作為第1開口以及第2開口之排列，分別設定為對應於間隔件以及導電粒子之規則性圖案之排列。
再者，轉印模具之第1開口以及第2開口之直徑與深度可利用雷射顯微鏡進行測定。
作為於轉印模具之第1開口內收納間隔件之方法以及於第2 開口內收納導電粒子之方法並無特別限定，可採用公知之方法。例如，於將乾燥後之導電粒子粉末或使其分散於溶劑中而成之分散液噴灑或塗佈於轉印模具之開口形成面上之後，使用毛刷或刮刀等而擦拭開口形成面之表面即可。
(第1開口)
第1開口之直徑(第1開口直徑)相對於間隔件之平均粒徑之比(=第1開口直徑/間隔件平均粒徑)就間隔件之收納之容易程度、絕緣性樹脂之壓入容易程度等平衡性之方面而言，較佳為1.1以上且2.0以下，更佳為1.2以上且1.8以下，尤佳為1.3以上且1.7以下。
又，間隔件之平均粒徑相對於第1開口之深度(第1開口深度)之比(=間隔件平均粒徑/第1開口深度)就轉印性提高、間隔件保持性等之平衡性之方面而言，較佳為0.4以上且3.0以下，更佳為0.5以上且1.5以下。
再者，第1開口之基底側之底部直徑(第1開口基底部直徑)相對於間隔件之平均粒徑之比(=第1開口基底部直徑/導電粒子平均粒徑)就導電粒子之收納之容易程度、絕緣性樹脂之壓入容易程度等平衡性之方面而言，較佳為1.1以上且2.0以下，更佳為1.2以上且1.7以下，尤佳為1.3以上且1.6以下。
(第2開口)
另一方面，第2開口之直徑(第2開口直徑)相對於導電粒子之平均粒徑之比(=第2開口直徑/導電粒子平均粒徑)就導電粒子之收納之容易程度、絕緣性樹脂之壓入容易程度等平衡性之方面而言，亦較佳為1.1以 上且2.0以下，更佳為1.3以上且1.8以下。
又，導電粒子之平均粒徑相對於第2開口之深度(第2開口深度)之比(=導電粒子平均粒徑/第2開口深度)就轉印性提高與導電粒子保持性之平衡性之方面而言，亦較佳為0.4以上且3.0以下，更佳為0.5以上且1.5以下。
再者，第2開口之基底側之底部直徑(第2開口基底部直徑)相對於導電粒子之平均粒徑之比(=第2開口基底部直徑/導電粒子平均粒徑)就導電粒子之收納之容易程度、絕緣性樹脂之壓入容易程度等平衡性之方面而言，較佳為1.1以上且2.0以下，更佳為1.2以上且1.7以下，尤佳為1.3以上且1.6以下。
再者，於積層第1絕緣性接著層與第2絕緣性接著層時，較佳為對第1絕緣性接著層進行預硬化處理(加熱或者紫外線照射等)。藉此，可暫時固定導電粒子或者間隔件。
<<異向性導電膜之用途>>
藉由上述方式獲得之異向性導電膜可於藉由熱或光將IC晶片、IC模組等第1電子零件與可撓性基板、玻璃基板等第2電子零件進行異向性導電連接時較佳地使用。藉由上述方式獲得之連接構造體亦為本發明之一部分。於該情形時，將異向性導電膜暫時貼附於配線基板等第2電子零件，將IC晶片等第1電子零件搭載於暫時貼附之異向性導電膜，並自第1電子零件側進行熱壓接，此情況就提高連接可靠性之方面較佳。又，亦可利用光硬化進行連接。
實施例
以下，藉由實施例對本發明具體地進行說明。再者，以下之實施例1、5、9之異向性導電膜具有以下態樣A之構造(參照圖4)，實施例2、6、10之異向性導電膜具有態樣B之構造(參照圖5)，實施例3、7、11之異向性導電膜具有態樣C之構造(參照圖6)，實施例4、8、12之異向性導電膜具有態樣D之構造(參照圖7)。
實施例1(態樣A)
(分散保持有導電粒子之第1絕緣性接著層之形成)
將苯氧基樹脂(YP-50，新日鐵化學(股份))60質量份、丙烯酸酯(EP600，Daicel-Cytec(股份))40質量份、光自由基聚合起始劑(IRGACURE 369，三菱化學(股份))2質量份、及平均粒徑4μm之導電粒子(鍍Ni/Au樹脂粒子，AUL704，積水化學工業(股份))50質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為6μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯剝離膜(PET剝離膜)，並於80℃之烘箱中乾燥5分鐘，藉此形成光自由基聚合型之第1絕緣性接著層。
(間隔件用轉印模具)
其次，準備以圖3A所示之圖案，以縱30μm間距形成有用於間隔件之直徑23μm且深度15μm之第1開口的不鏽鋼絲製之轉印模具。
將平均粒徑(間隔件高度)15μm之球狀間隔件(SSX-115，積水化成品工業(股份))逐個收納於該轉印模具之第1開口。
(排列有間隔件之第1絕緣性接著層之形成)
使第1絕緣性接著層與該轉印模具之開口形成面相對向，並自剝離膜 側以60℃、0.5MPa之條件進行加壓，藉此將間隔件壓入第1絕緣性接著層。
其次，藉由自該導電粒子側照射波長365nm、累計光量4000mL/cm2之紫外線，將間隔件暫時固定於表面中央部，而形成分散保持有導電粒子之第1絕緣性接著層。
(第2絕緣性接著層之形成)
其次，將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、環氧樹脂(jER828，三菱化學(股份))40質量份及光陽離子聚合起始劑(SI-60，三新化學工業(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之PET剝離膜，並於80℃之烘箱中乾燥5分鐘，藉此形成相對較厚之第2絕緣性接著層。
(第1絕緣性接著層與第2絕緣性接著層之層壓)
以間隔件成為內側之方式以60℃、0.5MPa之條件將相對較厚之第2絕緣性接著層層壓於藉由上述方式獲得之第1絕緣性接著層，藉此獲得異向性導電膜。
實施例2(態樣B)
(形成分散保持有導電粒子之第1絕緣性接著層)
與實施例1同樣地，形成含有導電粒子之第1絕緣性接著層，進而照射波長365nm、累計光量4000mL/cm2之紫外線，藉此形成分散保持有導電粒子之第1絕緣性接著層。
(於表面排列有間隔件之第2絕緣性接著層之形成)
其次，將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、 環氧樹脂(jER828，三菱化學(股份))40質量份及光陽離子聚合起始劑(SI-60，三新化學工業(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之PET剝離膜，並於80℃之烘箱中乾燥5分鐘，藉此形成相對較厚之第2絕緣性接著層。
其次，準備以圖3A所示之圖案以縱30μm間距設置有用於間隔件之直徑23μm且深度15μm之第1開口的不鏽鋼絲製之轉印模具。
將平均粒徑(間隔件高度)15μm之球狀間隔件(SSX-115，積水化成品工業(股份))逐個收納於該轉印模具之第1開口。
使第2絕緣性接著層與該轉印模具之開口形成面相對向，並自剝離膜側以60℃、0.5MPa之條件加壓，藉此將間隔件壓入第2絕緣性接著層。
其次，藉由自該導電粒子側照射波長365nm、累計光量4000mL/cm2之紫外線而形成於表面中央部暫時固定有間隔件之第2絕緣性接著層。
(第1絕緣性接著層與第2絕緣性接著層之層壓)
以間隔件成為內側之方式以60℃、0.5MPa之條件將於表面中央暫時固定有間隔件之相對較厚之第2絕緣性接著層層壓於藉由上述方式獲得之分散保持有導電粒子之第1絕緣性接著層，藉此獲得異向性導電膜。
實施例3(態樣C)
(於表面排列有導電粒子與間隔件之第1絕緣性接著層之形成)
準備以圖3A所示之圖案以縱30μm間距設置有用於間隔件之直徑23μm且深度15μm之第1開口，且於其以外之表面以4μm間距二維地設置有用於導電粒子之直徑6μm且深度4μm之第2開口的不鏽鋼絲製之轉印模具。
將平均粒徑(間隔件高度)15μm之球狀間隔件(SSX-115，積水化成品工業(股份))逐個收納於該轉印模具之第1開口，其次，將平均粒徑4μm之導電粒子(鍍Ni/Au樹脂粒子，AUL704，積水化學工業(股份))逐個收納於第2開口。
將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、丙烯酸酯(EP600，Daicel-Cytec(股份))40質量份、及光自由基聚合起始劑(IRGACURE 369，三菱化學(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為6μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯剝離膜(PET剝離膜)，並於80℃之烘箱中乾燥5分鐘，藉此形成光自由基聚合型之第1絕緣性接著層。
使不含該導電粒子之第1絕緣性接著層與預先準備之轉印模具相對向，並自剝離膜側以60℃、0.5MPa之條件進行加壓，藉此將間隔件與導電粒子壓入第1絕緣性接著層。
其次，藉由自該導電粒子側照射波長365nm、累計光量4000mL/cm2之紫外線，將間隔件暫時固定於表面中央部，而形成於其周圍暫時固定有導電粒子之第1絕緣性接著層。
(第2絕緣性接著層之形成)
其次，將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、 環氧樹脂(jER828，三菱化學(股份))40質量份及光陽離子聚合起始劑(SI-60，三新化學工業(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之PET剝離膜，並於80℃之烘箱中乾燥5分鐘，藉此形成相對較厚之第2絕緣性接著層。
(第1絕緣性接著層與第2絕緣性接著層之層壓)
繼而，以間隔件成為內側之方式以60℃、0.5MPa之條件將相對較厚之第2絕緣性接著層層壓於藉由上述方式獲得之於表面排列有導電粒子與間隔件之第1絕緣性接著層，藉此形成異向性導電膜。
實施例4(態樣D)
(於表面排列有間隔件之第2絕緣性接著層之形成)
準備以圖3A所示之圖案以縱30μm間距形成有用於間隔件之直徑23μm且深度15μm之第1開口的不鏽鋼絲製之轉印模具1，並將平均粒徑(間隔件高度)15μm之球狀間隔件(SSX-115，積水化成品工業(股份))逐個收納於該轉印模具之第1開口。
將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、環氧樹脂(jER828，三菱化學(股份))40質量份及光陽離子聚合起始劑(SI-60，三新化學工業(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為12μm之方式塗佈於厚度50μm之PET剝離膜，並於80℃之烘箱中乾燥5分鐘，藉此形成相對較厚之第2絕緣性接著層。
使第2絕緣性接著層與該轉印模具之開口形成面相對向，並 自剝離膜側以60℃、0.5MPa之條件進行加壓，藉此將間隔件壓入第2絕緣性接著層。
其次，藉由自該導電粒子側照射波長365nm、累計光量4000mL/cm2之紫外線，而形成於表面中央部暫時固定有間隔件之第2絕緣性接著層。
(於表面排列有導電粒子之第1絕緣性接著層之形成)
準備於表面以4μm間距二維地設置有用於導電粒子之直徑6μm且深度4μm之第2開口的不鏽鋼絲製之轉印模具，並將平均粒徑4μm之導電粒子(鍍Ni/Au樹脂粒子，AUL704，積水化學工業(股份))逐個收納於第2開口。
將苯氧基樹脂(YP-50，新日鐵住友化學(股份))60質量份、丙烯酸酯(EP600，Daicel-Cytec(股份))40質量份、及光自由基聚合起始劑(IRGACURE 369，三菱化學(股份))2質量份以於甲苯中固體成分成為50質量%之方式製備混合液。將該混合液以乾燥厚度成為6μm之方式塗佈於厚度50μm之聚對苯二甲酸乙二酯剝離膜(PET剝離膜)，並於80℃之烘箱中乾燥5分鐘，藉此形成光自由基聚合型之第1絕緣性接著層。
使該第1絕緣性接著層與預先準備之轉印模具相對向，並自剝離膜側以60℃、0.5MPa之條件進行加壓，藉此將導電粒子壓入第1絕緣性接著層。
其次，藉由自該導電粒子側照射波長365nm、累計光量4000mL/cm2之紫外線，而形成於表面暫時固定有導電粒子之第1絕緣性接著層。
(第1絕緣性接著層與第2絕緣性接著層之層壓)
繼而，以間隔件成為內側之方式以60℃、0.5MPa之條件將於表面中央暫時固定有間隔件之相對較厚之第2絕緣性接著層層壓於藉由上述方式獲得之於表面排列有導電粒子之第1絕緣性接著層，藉此獲得異向性導電膜。
實施例5~8
除了使用平均粒徑(間隔件高度)10μm之球狀間隔件(SSX-110，積水化成品工業(股份))代替平均粒徑(間隔件高度)15μm之球狀間隔件以外，以與實施例1~4相同之方式獲得異向性導電膜。
實施例9~10
除了使用間隔件高度15μm且間隔件長度20μm之玻璃圓柱(MICROROD PF系列，日本電氣硝子(股份))代替平均粒徑(間隔件高度)15μm之球狀間隔件以外，以與實施例1相同之方式獲得異向性導電膜。再者，玻璃圓柱係使用對478目之篩網多次過篩而使高度一致者。玻璃圓柱間隔件如圖3E般，成為橫臥之狀態，其長邊方向成為隨機。
比較例1
除了不使用間隔件以外，以與實施例1相同之方式獲得異向性導電膜。
比較例2
於製作第1絕緣性接著層時，不使間隔件排列於第1絕緣性接著層之表面，且除導電粒子以外亦均勻地分散間隔件10質量份而製作第1絕緣性接著層，除此以外，以與實施例1相同之方式獲得異向性導電膜。
<評價>
針對各實施例及比較例之異向導電性膜，對(a)初期導通電阻、(b) 導通可靠性、(c)短路發生率、(d)壓痕分別如下述般進行試驗評價，並將所獲得之結果示於表1。再者，壓痕係用於評價導電粒子對凸塊之壓入之均勻性者。
(a)初期導通電阻
將各實施例及比較例之異向導電性膜夾在初期導通及導通可靠性之評價用IC與玻璃基板之間，並進行加熱加壓(180℃，80MPa，5秒)而獲得各評價用連接物，使用數位萬用錶7557(橫河電氣(股份))測定該評價用連接物之導通電阻。此處，關於該各評價用IC與玻璃基板，其等之端子圖案對應，尺寸如下所述。
初期導通之評價用IC
外徑：1.8×20mm
厚度：0.2mm
Bump規格：鍍金，高度9μm，尺寸30×85μm
玻璃基板
玻璃材質：Corning公司製造
外徑：30×50mm
厚度：0.5mm
電極：ITO配線
(b)導通可靠性
以與(a)初期導通電阻相同之方式對將(a)初期導通電阻之評價用IC與各實施例及比較例之異向導電性膜之評價用連接物放置於溫度85℃、濕度85%RH之恆溫槽中500小時後之導通電阻進行測定。再者，若該導通 電阻為5Ω以上，則於所連接之電子零件之實用性之導通穩定性之方面欠佳。
(c)短路發生率
準備下述IC(間隙7.5μm之梳齒TEG(test element group，測試元件組))作為短路發生率之評價用IC。
外徑：1.5×13mm
厚度：0.5mm
Bump規格：鍍金，高度15μm，尺寸25×140μm，Bump之間之間隙7.5μm
將各實施例及比較例之異向導電性膜夾在短路發生率之評價用IC與該評價用IC所對應之圖案之玻璃基板(供於初期導通電阻測定者)之間，以與(b)相同之連接條件進行加熱加壓而獲得連接物，並求出該連接物之短路發生率。短路發生率(ppm)係根據「短路之發生數/7.5μm間隙總數」而算出。
(d)壓痕
準備下述IC作為壓痕之評價用IC。
外徑：1.4×20mm
厚度：0.2mm
Bump規格：鍍金，高度15μm，尺寸15×100μm，3行錯位排列(輸出側凸塊；將IC短邊方向外側設為第1行凸塊，將IC短邊方向中央側設為第3行凸塊，輸入側凸塊；40×60μm)
將各實施例及比較例之異向導電性膜夾在壓痕之評價用IC 與該評價用IC所對應之圖案之玻璃基板(供初期導通電阻測定者)之間，以與(a)初期導通電阻試驗相同之連接條件進行加熱加壓而獲得連接物，針對該連接物之異向性導電連接部之第1行凸塊與第3行凸塊，分別任意選擇10個凸塊並使用光學顯微鏡自玻璃基板側確認凸塊表面有無壓痕，並根據以下之評價基準進行評價。於實際使用上較理想為B評價以上。
等級 基準
AA：所觀察之10個凸塊中，觀察到壓痕之凸塊之數量為10個之情形
A：所觀察之10個凸塊中，觀察到壓痕之凸塊之數量為8或9個之情形
B：所觀察之10個凸塊中，觀察到壓痕之凸塊之數量為1~7個之情形
C：所觀察之10個凸塊中，觀察到壓痕之凸塊之數量為0個之情形
根據表1可知，關於實施例1~12之異向性導電膜，結果為任一評價項目於實際使用上均無問題。相對於此，於比較例1之異向性導電膜之情形時，由於比較例1中無間隔件，故而於IC短邊方向外側之第1行凸塊處未觀察到壓痕。又，於比較例2之異向性導電膜之情形時，由於間隔件分散於膜整體，故而於初期導通電阻與導通可靠性之試驗中成為 「open」之結果，並且於IC短邊方向外側之第1行凸塊與第3行凸塊處未觀察到壓痕。
再者，排列有導電粒子之情形(態樣C、D)與分散有導電粒子之情形(態樣A、B)相比，尤其是短路發生率明顯降低。又，關於間隔件之形狀與大小，有球狀15μm優於球狀10μm，玻璃圓柱15μm更佳之傾向。
[產業上之可利用性]
本發明之異向性導電膜於其寬度方向中央部排列有間隔件。因此，於異向性導電連接時，可抑制於IC晶片產生撓曲，因此可不使初期導通值上升，並且可抑制短路之發生率。因此，對於IC晶片等電子零件向配線基板之異向性導電連接有用。
1‧‧‧間隔件
2‧‧‧導電粒子
10‧‧‧絕緣性接著層
100‧‧‧異向性導電膜
A‧‧‧間隔件配置區域

Claims (15)

  1. 一種異向性導電膜，其係含有導電粒子與間隔件者，並且間隔件排列於該異向性導電膜之寬度方向中央部。
  2. 如申請專利範圍第1項之異向性導電膜，其中，該膜之寬度方向中央部之寬度為該膜之全寬之20%以上且80%以下。
  3. 如申請專利範圍第1或2項之異向性導電膜，其中，異向性導電膜之厚度方向之間隔件之高度大於5μm且小於75μm。
  4. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層分散有導電粒子，於第1絕緣性接著層之第2絕緣性接著層側之表面規則地排列有間隔件。
  5. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層分散有導電粒子，於第2絕緣性接著層之第1絕緣性接著層側之表面規則地排列有間隔件。
  6. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層之第2絕緣性接著層側之表面分別規則地排列有導電粒子與間隔件。
  7. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，異向性導電膜具有第1絕緣性接著層與第2絕緣性接著層之積層構造，於第1絕緣性接著層之第2絕緣性接著層側之表面規則地排列有導電粒子， 於第2接著層之第1絕緣性接著層側之表面規則地排列有間隔件。
  8. 一種申請專利範圍第1項之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之絕緣性接著層，而使間隔件轉接著於絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
  9. 一種申請專利範圍第4項之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之分散有導電粒子之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
  10. 一種申請專利範圍第5項之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口的轉印模具之該第1開口收納間隔件，於轉印模具之第1開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使間隔件轉接著於第2絕緣性接著層，進而積層構成異向性導電膜之分散有導電粒子之第1絕緣性接著層，其中，該用於收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
  11. 一種申請專利範圍第6項之異向性導電膜之製造方法，係於形成有用於收納間隔件之第1開口且於其以外之部分形成有用以收納導電粒子之第2開口的轉印模具之該第1開口收納間隔件，繼而於第2開口收納導電粒子，於轉印模具之第1及第2開口形成面壓入構成異向性導 電膜之分散有導電粒子之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，進而積層第2絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置。
  12. 一種申請專利範圍第7項之異向性導電膜之製造方法，係於形成有用以收納間隔件之第1開口的第1轉印模具之第1開口收納間隔件，於第1轉印模具之第1開口形成面壓入構成異向性導電膜之第1絕緣性接著層，而使間隔件轉接著於第1絕緣性接著層，其中，該用以收納間隔件之第1開口形成於相當於該異向性導電膜之寬度方向中央部之位置；於形成有用以收納導電粒子之第2開口的第2轉印模具之第2開口收納導電粒子，於第2轉印模具之第2開口形成面壓入構成異向性導電膜之第2絕緣性接著層，而使導電粒子轉接著於第2絕緣性接著層，其中，該用以收納導電粒子之第2開口形成於相當於該異向性導電膜之寬度方向中央部以外之位置；將轉接著有間隔件之第1絕緣性接著層與轉接著有導電粒子之第2絕緣性接著層以間隔件與導電粒子成為內側之方式進行積層。
  13. 如申請專利範圍第9至12項中任一項之製造方法，其中，於第1絕緣性接著層之另一面積層其他絕緣性接著層。
  14. 一種連接構造體，其係利用申請專利範圍第1至7項中任一項之異向性導電膜將第1電子零件異向性導電連接於第2電子零件而成。
  15. 一種連接方法，其係利用申請專利範圍第1至7項中任一項之異向性導電膜將第1電子零件異向性導電連接於第2電子零件者， 其將異向性導電膜暫時貼附於第2電子零件，將第1電子零件搭載於暫時貼附之異向性導電膜，並自第1電子零件側進行熱壓接。
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