TW201542040A - Plasma reactor for purifying exhaust gas of the process facility - Google Patents

Plasma reactor for purifying exhaust gas of the process facility Download PDF

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Publication number
TW201542040A
TW201542040A TW103141690A TW103141690A TW201542040A TW 201542040 A TW201542040 A TW 201542040A TW 103141690 A TW103141690 A TW 103141690A TW 103141690 A TW103141690 A TW 103141690A TW 201542040 A TW201542040 A TW 201542040A
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Taiwan
Prior art keywords
electrode portion
plasma reactor
coolant
pipe
item
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TW103141690A
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Chinese (zh)
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TWI628980B (en
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Kyoung-Doo Kang
Myung-Keun Noh
Gyoung-O Ko
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Clean Factors Co Ltd
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Priority claimed from KR1020140045421A external-priority patent/KR101563193B1/en
Priority claimed from KR1020140070600A external-priority patent/KR101567562B1/en
Application filed by Clean Factors Co Ltd filed Critical Clean Factors Co Ltd
Publication of TW201542040A publication Critical patent/TW201542040A/en
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Publication of TWI628980B publication Critical patent/TWI628980B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00Applications of plasma devices
    • H05H2245/10Treatment of gases
    • H05H2245/17Exhaust gases

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

Provided is a plasma reactor for purifying an exhaust gas generated in a process facility, the plasma reactor disposed between a process chamber and a vacuum pump so as to decompose an exhaust gas discharged from the process chamber, the plasma reactor including: a conduit in which the exhaust gas flows and which is formed of a dielectric substance; first electrode portions that are installed on the conduit and covered from an inner space of the conduit; and second electrode portions that are disposed to be spaced apart from the first electrode portions and cause plasma discharge between the first electrode portions and the second electrode portions so that the exhaust gas is decomposed, wherein, in order to prevent damage of the conduit caused by plasma discharge, a thickness of a portion in which plasma discharge is concentrated, of the conduit is formed to be larger than a thickness of peripheral portions of the conduit.

Description

用於淨化製程設備之廢氣的電漿反應器Plasma reactor for purifying exhaust gas from process equipment 【0001】【0001】

本發明係有關一種用於淨化製程設備中所產生的廢氣之電漿反應器,特別是關於一種用於淨化製程設備中所產生的廢氣之電漿反應器,其係可以分解製程腔室排出之廢氣,避免電漿放電所產生的管路損壞,並可在管路過熱時冷卻管路。The present invention relates to a plasma reactor for purifying exhaust gas generated in a process equipment, and more particularly to a plasma reactor for purifying exhaust gas generated in a process equipment, which can decompose a process chamber to discharge Exhaust gas, avoiding pipeline damage caused by plasma discharge, and cooling the pipeline when the pipeline is overheated.

【0002】【0002】

製程,例如功能性薄層之形成與乾蝕刻係應用於製造半導體、顯示裝置或太陽能電池的製程中,這些製程一般都是在真空腔室中進行。在形成功能性薄層中係使用各種不同之金屬和非金屬前驅物作為製程氣體,乾蝕刻則使用各種不同之蝕刻氣體。Processes, such as the formation of functional thin layers and dry etching, are used in the fabrication of semiconductors, display devices, or solar cells, and these processes are typically performed in a vacuum chamber. A variety of different metal and non-metal precursors are used as process gases in the formation of functional thin layers, and various etching gases are used for dry etching.

【0003】[0003]

在一製程腔室中排出空氣的系統,包含製程腔室、一真空泵和一洗滌器等組件係透過排氣管路彼此連接。在此狀況下,從製程腔室排出之氣體可包含氣態分子或是霧態的非反應前驅物和固體晶種,即使會因製程而有所不同。此氣體更可能包含有一惰性氣體作為攜帶氣體。這些廢氣沿著排氣管路被引導至真空泵,在真空泵中,由於這些廢氣被壓縮在100℃或是更高的高溫狀態下,廢氣很容易發生相位變化,使固體副產物容易形成且聚集在真空泵中,腐蝕這些副產物之腐蝕性氣體,包含氟(F)和氯(Cl),其係會導致真空泵產生問題。A system for exhausting air in a process chamber, including a process chamber, a vacuum pump, and a scrubber, is connected to each other through an exhaust line. Under this condition, the gas discharged from the process chamber may contain gaseous molecules or non-reactive precursors and solid crystal seeds in a mist state, even if they vary depending on the process. This gas is more likely to contain an inert gas as a carrier gas. The exhaust gas is guided to the vacuum pump along the exhaust line. In the vacuum pump, since the exhaust gas is compressed at a high temperature of 100 ° C or higher, the exhaust gas is easily changed in phase, so that solid by-products are easily formed and accumulated. Corrosive gases that corrode these by-products in vacuum pumps, containing fluorine (F) and chlorine (Cl), can cause problems with the vacuum pump.

【0004】[0004]

為了改善因廢氣導致真空泵產生問題,新方法係藉由增加一低壓電漿裝置在真空泵之前端來重新配置整個排氣體系統以主要設備-低壓電漿裝置-真空泵-洗滌器之形式,以利用此嘗試獲得更好的效果。韓國專利登記第1065013號係揭露一電漿反應器之技術,其係利用施加一交流電驅動電壓給電漿反應器,使管路的阻障產生放電,以分解廢氣。In order to improve the problem of the vacuum pump caused by the exhaust gas, the new method is to reconfigure the entire exhaust system by adding a low-pressure plasma device at the front end of the vacuum pump in the form of a main device - a low pressure plasma device - a vacuum pump - scrubber Use this to get better results. Korean Patent Registration No. 1065013 discloses a technique of a plasma reactor in which an alternating current driving voltage is applied to a plasma reactor to cause a barrier of the pipeline to be discharged to decompose the exhaust gas.

【0005】[0005]

然而,在此前案中,電漿反應器之管路損壞係由發生在電漿反應器內的電漿放電或是因電漿放電的廢氣分解產生的微小粒子所造成者,使得電漿反應器之壽命減少。此外,當電漿放電發生時,因電場存在,電漿放電產生的帶電粒子會碰撞(離子轟擊)管路內周圍表面而造成管路損壞。尤其是,因為管路的損壞會在電漿放電集中的區域內更快速的進行,當電漿反應器之管路應該被經常更換或是只有電漿反應器之管路不能更換時,就要更換整個電漿反應器,此將造成使用者的負擔增加。However, in the previous case, the pipeline damage of the plasma reactor was caused by the plasma discharge occurring in the plasma reactor or the tiny particles generated by the decomposition of the exhaust gas generated by the plasma discharge, so that the plasma reactor The life is reduced. In addition, when the plasma discharge occurs, the charged particles generated by the plasma discharge may collide (ion bombard) the surrounding surface of the pipeline due to the electric field, causing damage to the pipeline. In particular, because the damage of the pipeline will proceed more quickly in the area where the plasma discharge is concentrated, when the pipeline of the plasma reactor should be replaced frequently or only the pipeline of the plasma reactor cannot be replaced, Replacing the entire plasma reactor will result in an increased burden on the user.

【0006】[0006]

本發明係提供一種電漿反應器,使從製程腔室中排出的廢氣被分解,避免電漿放電所產生的管路損壞,並可在管路過熱時冷卻管路。The present invention provides a plasma reactor for decomposing exhaust gas discharged from a process chamber, avoiding damage to a pipeline caused by plasma discharge, and cooling the pipeline when the pipeline is overheated.

【0007】【0007】

根據本發明之一方面,其係提供一電漿反應器設置於一製程腔室與一真空泵之間,以便分解由此製程腔室中排出的一廢氣,此電漿反應器包含 :一管路係供廢氣流動且由一介電物質所構成; 複數第一電極部安裝在該管路上並覆蓋該管路的內部空間;以及複數第二電極部係與第一電極部間隔設置,並在第一電極部與第二電極部之間產生電漿放電,以分解廢氣;其中,為了避免因電漿放電所造成的管路損壞,在電漿放電集中部分的管路所形成的厚度係大於管路周圍部分的厚度。According to an aspect of the invention, a plasma reactor is disposed between a process chamber and a vacuum pump to decompose an exhaust gas discharged from the process chamber, the plasma reactor comprising: a pipeline Providing a flow of exhaust gas and consisting of a dielectric substance; a plurality of first electrode portions are mounted on the pipeline and covering an inner space of the pipeline; and a plurality of second electrode portions are spaced apart from the first electrode portion, and are A plasma discharge is generated between the electrode portion and the second electrode portion to decompose the exhaust gas; wherein, in order to avoid pipeline damage caused by plasma discharge, the thickness formed in the pipeline portion of the plasma discharge is larger than the tube The thickness of the part around the road.

【0008】[0008]

根據本發明,一電漿反應器係具有下列所述之功效。According to the present invention, a plasma reactor has the following effects.

【0009】【0009】

第一, 一管路之厚度的增加係隨著更為接近電漿放電集中之區域,基於一組參考,使管路可以防止因 電漿放電或是因電漿放電的廢氣分解產生的微小粒子所造成的損壞,且可防止因電場存在使電漿放電產生的帶電粒子會離子轟擊到管路,故可防止管路的損壞使得電漿反應器之壽命可以延長。First, the increase in the thickness of a pipe is closer to the area where the plasma discharge is concentrated. Based on a set of references, the pipe can prevent the formation of tiny particles due to plasma discharge or decomposition of exhaust gas due to plasma discharge. The damage caused can prevent the charged particles generated by the discharge of the plasma from being bombarded into the pipeline due to the presence of the electric field, so that the damage of the pipeline can be prevented and the life of the plasma reactor can be prolonged.

【0010】[0010]

第二,管路係形成有二層,在二層中會直接接觸電漿放電的一層係形成含有具抗腐蝕性之材料,以便防止管路的損壞,並可延長電漿反應器之壽命。Second, the pipeline is formed with two layers, and a layer that directly contacts the plasma discharge in the second layer forms a material containing corrosion resistance to prevent damage of the pipeline and prolong the life of the plasma reactor.

【0011】[0011]

第三,有提供一溫度感測器,可以使用此溫度感測器來偵測管路的表面溫度、殼體的表面溫度或分離空間的溫度,以便判斷此管路是否過熱。Third, there is a temperature sensor that can be used to detect the surface temperature of the pipeline, the surface temperature of the casing, or the temperature of the separation space to determine whether the pipeline is overheated.

【0012】[0012]

第四,更提供一冷卻單元係與溫度感測器一起,當溫度感測器判斷管路處於過熱狀態時,一冷卻劑會注入管路內來冷卻管路,以便防止因過熱造成的管路損壞。因此,包含此管路的電漿反應器之壽命可以被延長。Fourth, a cooling unit is further provided together with the temperature sensor. When the temperature sensor determines that the pipeline is in an overheated state, a coolant is injected into the pipeline to cool the pipeline to prevent the pipeline from being overheated. damage. Therefore, the life of the plasma reactor containing this line can be extended.

【0013】[0013]

第五,由於絕緣部係環設在第一電極部周圍,所以可以使用冷卻水冷卻管路。尤其是,絕緣部可以保護溫度感測器,以便防止冷卻水造成溫度感測器的故障或損壞,更可藉由絕緣部的設置,使冷卻劑不限定要使用氣體,更可使用各種不同形式的冷卻劑。Fifth, since the insulating portion ring is provided around the first electrode portion, the cooling water can be used to cool the pipe. In particular, the insulating portion can protect the temperature sensor in order to prevent the cooling water from causing malfunction or damage of the temperature sensor, and the arrangement of the insulating portion can make the coolant not limit the gas to be used, and can use various forms. Coolant.

【0070】[0070]

10‧‧‧製程腔室10‧‧‧Processing chamber

30‧‧‧真空泵30‧‧‧vacuum pump

50‧‧‧洗滌器50‧‧‧ scrubber

100、100a、100b、100c、200、200a、200b、300、300a、400、400a、400b、400c、400d、400e‧‧‧電漿反應器100, 100a, 100b, 100c, 200, 200a, 200b, 300, 300a, 400, 400a, 400b, 400c, 400d, 400e‧‧‧ plasma reactor

110、110’、110”、110a、110b、210‧‧‧管路110, 110', 110", 110a, 110b, 210‧‧‧ pipelines

111‧‧‧第一層111‧‧‧ first floor

112‧‧‧第二層112‧‧‧ second floor

120、220‧‧‧第一電極部120, 220‧‧‧ first electrode

130、130a、230、230a‧‧‧第二電極部130, 130a, 230, 230a‧‧‧ second electrode

140、240‧‧‧殼體140, 240‧‧‧ shell

230’‧‧‧線圈部230’‧‧‧ coil department

125、225‧‧‧絕緣部125, 225‧‧‧Insulation

133、241‧‧‧冷卻劑注入孔133, 241‧‧‧ coolant injection hole

134、245‧‧‧冷卻劑排出孔134, 245‧‧‧ coolant discharge hole

151、263‧‧‧冷卻劑注入閥151, 263‧‧‧ coolant injection valve

153、264‧‧‧冷卻劑回收器153, 264‧‧‧ coolant recovery unit

153a、264a‧‧‧回收槽153a, 264a‧‧ ‧ recycling tank

153b、264b‧‧‧熱交換器153b, 264b‧‧ ‧ heat exchanger

157、250‧‧‧溫度感測器157, 250‧ ‧ temperature sensor

201、131‧‧‧廢氣入口201, 131‧‧‧ exhaust inlet

203、132‧‧‧廢氣出口203, 132‧‧‧Exhaust gas exports

260‧‧‧冷卻單元260‧‧‧Cooling unit

261‧‧‧控制器261‧‧‧ Controller

【0014】[0014]

第1圖係為一製程腔室、一真空腔室、一 洗滌器以及一電漿反應器之連接關係示意圖。Figure 1 is a schematic diagram showing the connection relationship between a process chamber, a vacuum chamber, a scrubber and a plasma reactor.

第2圖係為根據本發明一實施例之電漿反應器的剖視圖。Figure 2 is a cross-sectional view of a plasma reactor in accordance with an embodiment of the present invention.

第3圖係為根據本發明之另一實施例的電漿反應器的剖視圖。Figure 3 is a cross-sectional view of a plasma reactor in accordance with another embodiment of the present invention.

第4圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 4 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第5圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 5 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第6圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 6 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第7圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 7 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第8圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 8 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第9圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 9 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第10圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 10 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第11圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 11 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第12圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 12 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第13圖係為第7圖至第12圖所示之電漿反應器的冷卻單元構造的方塊圖。Figure 13 is a block diagram showing the construction of the cooling unit of the plasma reactor shown in Figures 7 to 12.

第14圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 14 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第15圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 15 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第16圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 16 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第17圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 17 is a cross-sectional view showing a plasma reactor according to still another embodiment of the present invention.

第18圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 18 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

第19圖係為根據本發明之再一實施例的電漿反應器的剖視圖。Figure 19 is a cross-sectional view of a plasma reactor in accordance with still another embodiment of the present invention.

【0015】[0015]

第2圖係為根據本發明一實施例 之電漿反應器的剖視圖。Figure 2 is a cross-sectional view of a plasma reactor in accordance with an embodiment of the present invention.

【0016】[0016]

首先,根據本發明之一實施例來詳細描述一電漿反應器的構造,如第1(a)圖所示,一電漿反應器100係設置在一製程腔室10及一真空泵30之間,以便分解一廢氣,其係包含有從製程腔室10排出的金屬前驅物、非金屬前驅物以及製程氣體及清潔氣體的副產物。當在製程腔室10裡面的廢氣被真空泵30排出時,廢氣會被電漿反應器100分解,並淨化,然後流動至真空泵30中。然而,電漿反應器100不一定要配置在製程腔室10與真空泵30之間,如第1(b)圖所示,電漿反應器100也可以設置在真空泵30和一洗滌器50之間,更可以安裝有複數個電漿反應器100重複地進行廢氣分解與淨化過程,此製程腔室10、電漿反應器100、真空泵30和洗滌器50係透過排氣線彼此連接。First, a configuration of a plasma reactor is described in detail according to an embodiment of the present invention. As shown in FIG. 1(a), a plasma reactor 100 is disposed between a process chamber 10 and a vacuum pump 30. In order to decompose an exhaust gas, which contains metal precursors discharged from the process chamber 10, non-metal precursors, and by-products of process gases and cleaning gases. When the exhaust gas inside the process chamber 10 is discharged by the vacuum pump 30, the exhaust gas is decomposed by the plasma reactor 100, purified, and then flows into the vacuum pump 30. However, the plasma reactor 100 does not have to be disposed between the process chamber 10 and the vacuum pump 30. As shown in FIG. 1(b), the plasma reactor 100 may also be disposed between the vacuum pump 30 and a scrubber 50. Further, a plurality of plasma reactors 100 may be installed to repeatedly perform the decomposition and purification process of the exhaust gas. The process chamber 10, the plasma reactor 100, the vacuum pump 30, and the scrubber 50 are connected to each other through an exhaust line.

【0017】[0017]

在製程腔室10的內部被配置成一真空環境,且複數製程,例如灰化、沉積、蝕刻、微影、淨化和硝化作用等皆在此製程腔室10中進行。在本發明實施例中,薄層的形成或乾蝕刻係在此製程腔室10中進行。The interior of the process chamber 10 is configured as a vacuum environment, and a plurality of processes, such as ashing, depositing, etching, lithography, purification, and nitrification, are performed in the process chamber 10. In the embodiment of the invention, the formation of a thin layer or dry etching is performed in the process chamber 10.

【0018】[0018]

當非反應性金屬前驅物分子被分解,然後構成金屬副產物或非反應性非金屬前驅物分子被分解,然後再構成非金屬副產物、金屬副產物及非金屬副產物皆聚集在真空泵30之一內表面或洗滌器50之內表面,導致許多問題發生。一反應性氣體引起非反應性金屬前驅物分子或非反應性非金屬前驅物在之後被分解以構成金屬氧化物或非金屬氧化物等細微粒,而不會形成金屬副產物或非金屬副產物。再者,當一非反應性製程氣體及一非反應性清潔氣體微粒包含之氟原子和氯原子被分解時可能會產生反應性氣體,以及當反應性氣體被引用進入真空泵30時,可能改變 活化的 F- 或 Cl-,其係會導致與形成在真空泵30內表面的一金屬表面會反應產生腐蝕或蝕刻 ,而改變為非結晶合金,包含HF、HCl、金屬原子 -F-0、金屬原子-Cl-0或金屬原子-F-Cl-0。When the non-reactive metal precursor molecules are decomposed, then the metal by-products or non-reactive non-metal precursor molecules are decomposed, and then the non-metal by-products, metal by-products, and non-metal by-products are accumulated in the vacuum pump 30. An inner surface or inner surface of the scrubber 50 causes many problems to occur. A reactive gas causes the non-reactive metal precursor molecules or non-reactive non-metal precursors to be subsequently decomposed to form fine particles such as metal oxides or non-metal oxides without forming metal by-products or non-metal by-products . Furthermore, when a non-reactive process gas and a non-reactive cleaning gas particle contain fluorine atoms and chlorine atoms which are decomposed, a reactive gas may be generated, and when the reactive gas is introduced into the vacuum pump 30, the activation may be changed. F- or Cl-, which may cause corrosion or etching to react with a metal surface formed on the inner surface of the vacuum pump 30, and change to an amorphous alloy containing HF, HCl, metal atom-F-0, metal atom -Cl-0 or a metal atom - F-Cl-0.

【0019】[0019]

參考第2圖所示,根據本發明之一實施例的電漿反應器100包含有一管路110、第一電極部120、第二電極部130和一殼體。首先,電漿反應器100之管路110係為一流動路徑,提供廢氣流動,電漿反應器100之管路110係形成為圓柱形,且管路110的內部沿著管路110的縱長方向貫穿。管路110係由高介電物質形成,例如 氧化鋁、氧化鋯(ZrO2 )、氧化釔(Y2 O3 )、藍寶石、石英管路或玻璃管路。Referring to Fig. 2, a plasma reactor 100 according to an embodiment of the present invention includes a line 110, a first electrode portion 120, a second electrode portion 130, and a casing. First, the line 110 of the plasma reactor 100 is a flow path for providing exhaust gas flow. The line 110 of the plasma reactor 100 is formed into a cylindrical shape, and the inside of the line 110 is along the length of the line 110. The direction runs through. The conduit 110 is formed of a high dielectric material such as alumina, zirconia (ZrO 2 ), yttria (Y 2 O 3 ), sapphire, quartz tubing or glass tubing.

【0020】[0020]

第一電極部120係安裝在匹配且環繞在管路110之外周圍表面,並與該第二電極部130間隔設置,以在第一電極部120與第二電極部130之間產生電漿放電。第一電極部120係形成管狀形式,以便安裝在環繞管路110之外周圍表面。一般而言,第一電極部120係作為驅動電極,以便在第一電極部120與第二電極部130之間產生電漿放電,因此,施加交流(AC)電壓給第一電極部120。The first electrode portion 120 is mounted on the surrounding surface that is matched and surrounds the pipe 110, and is spaced apart from the second electrode portion 130 to generate a plasma discharge between the first electrode portion 120 and the second electrode portion 130. . The first electrode portion 120 is formed in a tubular form so as to be mounted on a peripheral surface other than the surrounding pipe 110. In general, the first electrode portion 120 functions as a driving electrode to generate a plasma discharge between the first electrode portion 120 and the second electrode portion 130, and therefore, an alternating current (AC) voltage is applied to the first electrode portion 120.

【0021】[0021]

參考第2圖所示,第一電極部120係形成具有較大的長度以沿著管路110之縱長方向,然而,本發明之實施例並不限定於此。緩衝單元(圖中未示)具有一管狀結構係插設在管路110與第一電極部120之間,緩衝單元(圖中未示)係以具有導電性或介電物質之材料所構成,並具有彈性,如此使得管路110與第一電極部120可以互相緊密接觸。Referring to FIG. 2, the first electrode portion 120 is formed to have a large length to extend along the longitudinal direction of the tube 110, however, the embodiment of the present invention is not limited thereto. The buffer unit (not shown) has a tubular structure interposed between the pipeline 110 and the first electrode portion 120, and the buffer unit (not shown) is made of a material having a conductive or dielectric substance. And having elasticity such that the pipe 110 and the first electrode portion 120 can be in close contact with each other.

【0022】[0022]

在參考第2圖所示,第二電極部130係連接至管路110之一端或二端,以便與管路110導通。如上面所述,第一電極部120係作為驅動電極,以供施加AC電壓,因此,第二電極部130係作為接地電極,使第二電極部130與第一電極部120之間可以產生電漿放電。因此,第二電極部130係由金屬組成。Referring to FIG. 2, the second electrode portion 130 is connected to one or both ends of the pipe 110 to be electrically connected to the pipe 110. As described above, the first electrode portion 120 functions as a driving electrode for applying an AC voltage. Therefore, the second electrode portion 130 functions as a ground electrode, and electricity can be generated between the second electrode portion 130 and the first electrode portion 120. Slurry discharge. Therefore, the second electrode portion 130 is composed of metal.

【0023】[0023]

請參考第2圖所示,第二電極部130之構成係具有沿著管路110之縱長方向漸漸減少的橫截面,然而,本發明之實施例並不僅限定於此,第二電極部130亦可以形成具有沿著管路110之縱長方向均勻的橫截面。根據第二電極部130連接至管路110之位置,第二電極部130係作為一廢氣入口131或是一廢氣出口132。Referring to FIG. 2, the second electrode portion 130 has a cross section that gradually decreases along the longitudinal direction of the tube 110. However, the embodiment of the present invention is not limited thereto, and the second electrode portion 130 is not limited thereto. It is also possible to form a cross section which is uniform along the longitudinal direction of the pipe 110. The second electrode portion 130 serves as an exhaust gas inlet 131 or an exhaust gas outlet 132 according to the position at which the second electrode portion 130 is connected to the conduit 110.

【0024】[0024]

廢氣係被引入至其中一個第二電極部130,並通過廢氣入口131並在管路110內流動。廢氣具有一定的壓力存在於管路110內。在此情況下,當交流電壓被施加於作為驅動電壓之第一電極部120時,電子開始在第一電極部120與作為接地電極的第二電極部130之間移動,且發生電漿放電,以分解此廢氣。The exhaust gas system is introduced to one of the second electrode portions 130 and flows through the exhaust gas inlet 131 and within the conduit 110. The exhaust gas has a certain pressure present in the line 110. In this case, when an alternating voltage is applied to the first electrode portion 120 as the driving voltage, electrons start to move between the first electrode portion 120 and the second electrode portion 130 as the ground electrode, and plasma discharge occurs. To decompose this exhaust gas.

【0025】[0025]

殼體140係環繞於管路110,以保護管路110之外周圍表面以及安裝在管路110之外周圍表面的第一電極部120。殼體140係在殼體140與管路110之外周圍表面之間構成一分離空間。The housing 140 surrounds the conduit 110 to protect the outer surface of the conduit 110 and the first electrode portion 120 mounted on a peripheral surface outside the conduit 110. The housing 140 forms a separation space between the housing 140 and the outer surface of the conduit 110.

【0026】[0026]

另一方面,管路110可能會因為第一電極部120與第二電極部130間發生的電漿放電而受到損壞,尤其是,許多損壞都局部發生在對應有電漿放電聚集的區域A。因此,在本發明中,電漿放電聚集的區域A的管路110所形成的厚度大於管路110周圍部份的厚度,以 防止電漿放電產生的帶電粒子會離子轟擊到管路100而造成管路110損壞 。On the other hand, the tube 110 may be damaged by the plasma discharge occurring between the first electrode portion 120 and the second electrode portion 130. In particular, many of the damage locally occurs in the region A corresponding to the plasma discharge accumulation. Therefore, in the present invention, the thickness of the pipe 110 of the region A where the plasma discharge is concentrated is formed to be larger than the thickness of the portion around the pipe 110 to prevent charged particles generated by the plasma discharge from being ion bombarded to the pipe 100. The line 110 is damaged.

【0027】[0027]

一般而言,電漿放電聚集的區域A係位於第一電極部120與第二電極部130之間。請參考第2圖所示,在本實施例中,管路110的二端係位於第一電極部120與第二電極部130之間,且因此會對應電漿放電聚集的區域A,並有局部損壞發生。In general, the region A where the plasma discharge is concentrated is located between the first electrode portion 120 and the second electrode portion 130. Referring to FIG. 2, in the present embodiment, the two ends of the pipeline 110 are located between the first electrode portion 120 and the second electrode portion 130, and thus correspond to the region A where the plasma discharge is concentrated, and Local damage occurs.

【0028】[0028]

因此,在本實施例中,如第2圖所示,管路110之厚度係逐漸增加,換言之, 係具有零(0)或更高的增加率,當第一電極部120安裝在管路110縱長方向之中心時,第一電極部120從管路110縱長方向的中心更為接近沿著管路110縱長方向的管路110的二端,如圖所示,管路110之厚度係從對應管路110縱長方向中心之厚度t1逐漸增加至對應管路110二端的厚度t2。Therefore, in the present embodiment, as shown in Fig. 2, the thickness of the pipe 110 is gradually increased, in other words, has an increase rate of zero (0) or higher, when the first electrode portion 120 is installed in the pipe 110. In the center of the longitudinal direction, the first electrode portion 120 is closer to the both ends of the pipe 110 along the longitudinal direction of the pipe 110 from the center in the longitudinal direction of the pipe 110, as shown, the thickness of the pipe 110 The thickness t1 from the center of the longitudinal direction of the corresponding pipe 110 is gradually increased to the thickness t2 of the two ends of the corresponding pipe 110.

【0029】[0029]

管路110包含有一第一層111,具有沿著管路110之縱長方向的均勻厚度,以及第二層112係為管路110中電漿放電集中之區域A,在此係形成之厚度係大於管路110周圍部份之厚度。管路110之設置係將第一層111和第二層112分開製造,再將第二層112裝設至第一層111上,使第一層111和第二層112一體成形。然而,本發明之實施例不僅限定於此,第二層112亦可使用層疊、噴塗或浸泡形成於第一層111內,以便使第一層111與第二層112可以一體成形。如第2圖所示,噴灑在第一層111上之導電材料或介電物質係精密的疊層在第一層111的中心部份,使第一層111之中心部份的厚度係大於第一層111的初始部份。然而,本發明之實施例並不僅限定於此,第二層112也可以形成在第一層111厚度不增加的方式,在此狀況下,在分開製造第一層111與第二層112,第二層112亦可以插設至第一層111中。The conduit 110 includes a first layer 111 having a uniform thickness along the longitudinal direction of the conduit 110, and a second layer 112 being the region A where the plasma discharge is concentrated in the conduit 110, where the thickness is formed. Greater than the thickness of the portion around the tube 110. The piping 110 is disposed separately from the first layer 111 and the second layer 112, and the second layer 112 is attached to the first layer 111 to integrally form the first layer 111 and the second layer 112. However, embodiments of the present invention are not limited thereto, and the second layer 112 may also be formed in the first layer 111 by lamination, spraying or dipping so that the first layer 111 and the second layer 112 may be integrally formed. As shown in FIG. 2, the conductive material or dielectric substance sprayed on the first layer 111 is precisely laminated on the central portion of the first layer 111 such that the thickness of the central portion of the first layer 111 is greater than that of the first layer 111. The initial portion of a layer 111. However, the embodiment of the present invention is not limited thereto, and the second layer 112 may be formed in such a manner that the thickness of the first layer 111 is not increased. In this case, the first layer 111 and the second layer 112 are separately manufactured. The second layer 112 can also be inserted into the first layer 111.

【0030】[0030]

如 上面 所述,管路110係由一介電物質構成,此介電物質用來形成第二層112,使其形成包含有具更強抗腐蝕性的高介電物質,比用來形成第一層11之介電物質還強。尤其是,當第一層111係由 氧化鋁形成時,第二層112可以利用混合的氧化鋁和氧化釔粉末進行燒結或是具有優異抗濺鍍之氧化釔在氧化鋁材料裡。例如,可以使用 氮化矽(Si3 N4 )或氧化釔(Y2 O3 ),此乃因第二層112係直接受到發生在第一電極部120與第二電極部130間之電漿放電所影響。因此,為了減少陰電漿放電而蝕刻第二層112,第二層112係由包含具有強抗腐蝕性的材料所形成者。As described above, the conduit 110 is comprised of a dielectric material that is used to form the second layer 112 to form a high dielectric material that contains greater corrosion resistance. The dielectric material of layer 1 is also strong. In particular, when the first layer 111 is formed of alumina, the second layer 112 may be sintered using mixed alumina and cerium oxide powder or cerium oxide having excellent anti-sputtering in the alumina material. For example, tantalum nitride (Si 3 N 4 ) or yttrium oxide (Y 2 O 3 ) may be used because the second layer 112 is directly subjected to plasma generated between the first electrode portion 120 and the second electrode portion 130. Influenced by discharge. Therefore, in order to reduce the discharge of the negative plasma plasma, the second layer 112 is etched, and the second layer 112 is formed of a material containing a strong corrosion resistance.

【0031】[0031]

此外,每一第一層111與第二層112可以形成為包含有具彈性之材料,使第一層111 和第二層112分開製造,再將第二層112裝設至第一層111上,使第一層111和第二層112一體成形。當第一層111與第二層112僅由介電物質來製造時,即使第二層112裝配於第一層111,第二層也無法良好地固定在第一層111上。因此,當第一層111與第二層112分開製造為包含具有彈性之材料時,此第一層111與第二層112係具有彈性,且當第二層112裝配於第一層111時,第二層112可以緊密接觸第一層111並固定於第一層111上,因此,第一層111與第二層112為一體成形,且第二層112可以避免字第一層111上脫離或分離。然而,本發明之實施例並不僅限定於此,第一層111與第二層112可以僅由介電物質形成,且第二層112裝配第一層111上時,一緩衝層(圖中未示)更可以包含在第一層111與第二層112之間。In addition, each of the first layer 111 and the second layer 112 may be formed to include a resilient material such that the first layer 111 and the second layer 112 are separately fabricated, and then the second layer 112 is mounted on the first layer 111. The first layer 111 and the second layer 112 are integrally formed. When the first layer 111 and the second layer 112 are made only of a dielectric substance, even if the second layer 112 is assembled to the first layer 111, the second layer is not well fixed on the first layer 111. Therefore, when the first layer 111 and the second layer 112 are separately manufactured to include a material having elasticity, the first layer 111 and the second layer 112 have elasticity, and when the second layer 112 is assembled to the first layer 111, The second layer 112 can be in close contact with the first layer 111 and fixed on the first layer 111. Therefore, the first layer 111 and the second layer 112 are integrally formed, and the second layer 112 can prevent the first layer 111 from being detached or Separation. However, embodiments of the present invention are not limited thereto, and the first layer 111 and the second layer 112 may be formed only of a dielectric substance, and when the second layer 112 is assembled on the first layer 111, a buffer layer (not shown) Shown) may be further included between the first layer 111 and the second layer 112.

【0032】[0032]

同時,當第二層112形成時,如第2圖所示,對應電漿放電集中之區域A的周圍區域的部分也可以更進一步形成一預定厚度。因為電漿放電集中之區域A的周圍區域並不完全受到電漿放電影響,電漿放電集中之區域A的周圍區域則可以形成一預定厚度,即使他們並沒有與電漿放電集中之區域A形成相同的厚度,第一層111仍可受到保護。Meanwhile, when the second layer 112 is formed, as shown in Fig. 2, the portion of the peripheral region corresponding to the region A where the plasma discharge is concentrated may be further formed to a predetermined thickness. Since the area around the region A where the plasma discharge is concentrated is not completely affected by the plasma discharge, the surrounding area of the region A where the plasma discharge is concentrated may form a predetermined thickness even if they are not formed with the region A where the plasma discharge is concentrated. The first layer 111 can still be protected with the same thickness.

【0033】[0033]

第3圖係為根據本發明之另一實施例的電漿反應器100a示意圖。於第3圖所示之電漿反應器100a之構造中所使用的參考圖號皆相同於前面所述之實施例的電漿反應器100,相關的詳細說明將在此被省略,此實施例中僅係說明一不同之構造。Figure 3 is a schematic illustration of a plasma reactor 100a in accordance with another embodiment of the present invention. The reference numerals used in the construction of the plasma reactor 100a shown in Fig. 3 are the same as those of the plasma reactor 100 of the previously described embodiment, and the detailed description will be omitted herein. Only a different configuration is illustrated.

【0034】[0034]

在本實施例中,根據上述之實施例,管路110’之形狀係不同於管路100,請參考第3圖所示,管路110’係從管路110’縱長方向的中心到沿著管路110’縱長方向的管路110’二端的設定位置形成為均勻的,然後從設定位置到管路110’二端形成有厚的一均勻厚度。亦即,從管路110’縱長方向中心到沿著管路110’縱長方向的管路110’二端間的設定位置的管路110’厚度為均勻的t1’,從設定位置到管路110’二端管路110’的管路110’厚度為均勻的t2’,其厚度大於t1’,例如,厚度t1’形成的厚度係為6mm至10mm,且厚度t2’形成之厚度為1mm至2mm,係大於厚度t1’。In the present embodiment, according to the above embodiment, the shape of the pipe 110' is different from the pipe 100. Referring to FIG. 3, the pipe 110' is from the center to the longitudinal direction of the pipe 110'. The set positions of the two ends of the pipe 110' in the longitudinal direction of the pipe 110' are formed to be uniform, and then a uniform thickness is formed from the set position to both ends of the pipe 110'. That is, the thickness of the pipe 110' from the center of the longitudinal direction of the pipe 110' to the set position between the ends of the pipe 110' along the longitudinal direction of the pipe 110' is uniform t1', from the set position to the pipe The pipe 110' of the road 110' two-end pipe 110' has a uniform thickness t2' and a thickness greater than t1'. For example, the thickness t1' is formed to have a thickness of 6 mm to 10 mm, and the thickness t2' is formed to have a thickness of 1 mm. Up to 2 mm, greater than thickness t1'.

【0035】[0035]

如第4圖所示之一電漿反應器100b,係為由第3圖之實施例修改的形狀。請參考第第4圖所示,根據本實施例,在管路110”的厚度中,鄰近第二電極部130之部份b的部份因第二層112”的形成而具有較大厚度,而覆蓋有第一電極部120且從管路110”縱長方向的中心至設定位置的部份則形成有較小的厚度t1’。如上面所述,點漿放電集中發生在部份A,鄰近第一電極部120與第二電極部130,但是集中在第一電極部120與第二電極部13之間的電漿放電相當低,因此,對應部份b的管路110”的厚度係形成較小的厚度t1’,其係由管路110”之縱長方向之中心延伸至設定位置。A plasma reactor 100b as shown in Fig. 4 is a shape modified by the embodiment of Fig. 3. Referring to FIG. 4, according to the present embodiment, in the thickness of the pipe 110", a portion of the portion b adjacent to the second electrode portion 130 has a large thickness due to the formation of the second layer 112". The portion covered with the first electrode portion 120 and from the center in the longitudinal direction of the tube 110" to the set position is formed with a small thickness t1'. As described above, the spot discharge is concentrated in the portion A, Adjacent to the first electrode portion 120 and the second electrode portion 130, but the plasma discharge concentrated between the first electrode portion 120 and the second electrode portion 13 is relatively low, and therefore, the thickness of the pipe 110" corresponding to the portion b is A small thickness t1' is formed which extends from the center of the longitudinal direction of the pipe 110" to the set position.

【0036】[0036]

第5圖係為根據本發明之再一實施例的電漿反應器100c示意圖。請參考第5圖所示,在本實施例中,第二電極部130a係為不一樣的,不同於第2圖至第4圖所示之實施例,在本實施例中,第二電極部130a係形成為管狀,如同第一電極部120,係安裝在適當的管路110a的外周圍表面。在此狀況下,第二電極部130a係安裝在與第一電極部120間隔一預設距離的位置。亦即,第一電極部120與第二電極部130a係基於該管路110a縱長方向中心並以預設距離來彼此間隔設置。Figure 5 is a schematic view of a plasma reactor 100c in accordance with yet another embodiment of the present invention. Referring to FIG. 5, in the present embodiment, the second electrode portion 130a is different, different from the embodiment shown in FIGS. 2 to 4, in the present embodiment, the second electrode portion The 130a is formed into a tubular shape, like the first electrode portion 120, and is mounted on the outer peripheral surface of the appropriate conduit 110a. In this case, the second electrode portion 130a is mounted at a position spaced apart from the first electrode portion 120 by a predetermined distance. That is, the first electrode portion 120 and the second electrode portion 130a are spaced apart from each other by a predetermined distance based on the center of the longitudinal direction of the conduit 110a.

【0037】[0037]

在第2圖至第4圖之實施例中,第一電極部為驅動電極,供施加一AC電壓,且第二電極部係為接地電極,以便於第一電極部與第二電極部之間產生電漿放電,然而,本發明之實施例並不限定於此。在本實施例中,AC電壓係同時施加於第一電極部120與第二電極部130a,其中,一個相對的正(+)電壓係被施加於第一電極部120與第二電極部130a的其中之一,一個相對負(-)電壓則被施加於另一個,以便在二電極部之間會產生一電壓差,並產生電漿放電。In the embodiments of FIGS. 2 to 4, the first electrode portion is a driving electrode for applying an AC voltage, and the second electrode portion is a ground electrode for facilitating the connection between the first electrode portion and the second electrode portion. A plasma discharge is generated, however, embodiments of the invention are not limited thereto. In the present embodiment, the AC voltage is simultaneously applied to the first electrode portion 120 and the second electrode portion 130a, wherein a relative positive (+) voltage is applied to the first electrode portion 120 and the second electrode portion 130a. One of them, a relatively negative (-) voltage is applied to the other, so that a voltage difference is generated between the two electrode portions, and a plasma discharge is generated.

【0038】[0038]

在本實施例中,基於此管路110a的縱長方向的中心位置,管路110a愈接近管路110a的二端之厚度會逐漸變小。在本實施例中,因為第一電極部120與第二電極部130a係基於管路110a縱長方向而彼此間隔設置,位於第一電極部120與第二電極部130a之空間係為區域A,其係為電漿放電其中所在,因此,對應管路110a縱長方向之中心的部分形成較厚的厚度,所以,即使電漿放電集中在此,仍可減少管路110a的損壞。In the present embodiment, based on the center position of the longitudinal direction of the pipe 110a, the thickness of the pipe 110a closer to the both ends of the pipe 110a becomes gradually smaller. In the present embodiment, since the first electrode portion 120 and the second electrode portion 130a are spaced apart from each other based on the longitudinal direction of the tube 110a, the space between the first electrode portion 120 and the second electrode portion 130a is the region A, This is where the plasma discharge is located. Therefore, the portion corresponding to the center of the longitudinal direction of the pipe 110a is formed to have a relatively thick thickness, so that even if the plasma discharge is concentrated here, the damage of the pipe 110a can be reduced.

【0039】[0039]

如第6圖所示之一電漿反應器100d,係為由第5圖所示之實施例修改的形狀。在本實施例中,管路110b於沿著管路110b縱長方向中心的位置具有較大的厚度係相似於第5圖的管路110a,然而,在本實施例中,管路110b係形成有厚度t4’,其係從管路110b縱長方向的中心到管路110b的二端的設定位置係具有較大厚度,從設定位置到管路110b二端之厚度則為t3’。A plasma reactor 100d as shown in Fig. 6 is a shape modified by the embodiment shown in Fig. 5. In the present embodiment, the pipe 110b has a larger thickness at a position along the center in the longitudinal direction of the pipe 110b, similar to the pipe 110a of Fig. 5, however, in the present embodiment, the pipe 110b is formed. There is a thickness t4' which has a large thickness from the center in the longitudinal direction of the pipe 110b to the two ends of the pipe 110b, and the thickness from the set position to the both ends of the pipe 110b is t3'.

【0040】[0040]

第7圖係為根據本發明之再一實施例的電漿反應器200示意圖,在第7圖中,一溫度感測器157及一冷卻單元更被引入至第1圖所示之電漿反應器100中,溫度感測器係安裝在一殼體140內,詳言之,溫度感測器157係接觸管路110的外周圍表面或殼體140的內周圍表面,以便偵測管路110的表面溫度、殼體140的表面溫度或位於管路110和殼體140之間的分離空間。如上面所述,溫度感測器157偵測管路110或殼體140的表面溫度或是分離空間的溫度,並傳送溫度資訊至冷卻單元,此部分將詳述於後。為了更安全的使用電漿反應器200,它應更有效率的偵測管路110的表面溫度勝於偵測殼體140的表面溫度。在本實施例中,係偵測管路110的表面溫度。Figure 7 is a schematic view of a plasma reactor 200 according to still another embodiment of the present invention. In Figure 7, a temperature sensor 157 and a cooling unit are further introduced into the plasma reaction shown in Figure 1. In the device 100, the temperature sensor is installed in a casing 140. In detail, the temperature sensor 157 contacts the outer peripheral surface of the pipe 110 or the inner peripheral surface of the casing 140 to detect the pipeline 110. The surface temperature, the surface temperature of the housing 140, or a separation space between the conduit 110 and the housing 140. As described above, the temperature sensor 157 detects the surface temperature of the line 110 or the housing 140 or the temperature of the separation space, and transmits temperature information to the cooling unit, which will be described later in detail. In order to use the plasma reactor 200 more safely, it should more efficiently detect the surface temperature of the pipe 110 than to detect the surface temperature of the casing 140. In the present embodiment, the surface temperature of the line 110 is detected.

【0041】[0041]

當廢氣被電漿放電分解時,冷卻單元可以防止管路110因熱產生而引起的過熱,此乃因當廢氣分解產生的熱會直接傳導給管路110,因為熱會從管路110傳導至殼體140,使得判斷管路110是否過熱變得困難。因此,將溫度感測器157安裝在管路110的表面比裝設在殼體140的表面更有效率,當溫度感測器157偵測關於殼體140的表面溫度或分離空間溫度之資訊時,作為判斷管路110是否過熱之基礎的預設溫度可能要被設定為低於溫度感測器157偵測關於管路110之表面溫度之資訊時的溫度。When the exhaust gas is decomposed by the plasma discharge, the cooling unit can prevent the superheat of the pipeline 110 due to heat generation, because the heat generated by the decomposition of the exhaust gas is directly transmitted to the pipeline 110 because heat is conducted from the pipeline 110 to The housing 140 makes it difficult to determine whether the line 110 is overheated. Therefore, mounting the temperature sensor 157 on the surface of the pipe 110 is more efficient than mounting the surface of the casing 140, and when the temperature sensor 157 detects information about the surface temperature of the casing 140 or the temperature of the separation space. The preset temperature as a basis for judging whether the pipe 110 is overheated may be set to be lower than the temperature when the temperature sensor 157 detects information about the surface temperature of the pipe 110.

【0042】[0042]

如上面所述,當管路110的表面溫度等於或大於預設溫度時,冷卻單元係利用注入一冷卻劑到管路110中來冷卻管路110。此冷卻單元包含一控制器(圖中未示)、一冷卻劑注入閥151和一冷卻劑回收器153。控制器(圖中未示)判斷管路110過熱時會使用冷卻劑來冷卻管路110,然而,本發明之實施例並不僅限定於此,控制器(圖中未示)可以發出警報或是鎖住冷卻單元來停止電漿放電。控制器(圖中未示)接收來自溫度感測器157的管路110之表面溫度資訊,如上面所述,溫度感測器157係安裝在管路110的外周圍表面,偵測管路110的表面溫度資訊,並傳送管路110偵測到的表面溫度資訊給控制器(圖中未示)。由於預設溫度係儲存於控制器(圖中未示)中,假如從溫度感測器157傳送來的管路110之表面溫度係等於或大於一預設溫度時,控制器(圖中未示)即可以判斷此管路110過熱。As described above, when the surface temperature of the line 110 is equal to or greater than the preset temperature, the cooling unit cools the line 110 by injecting a coolant into the line 110. The cooling unit includes a controller (not shown), a coolant injection valve 151, and a coolant recovery unit 153. The controller (not shown) determines that the coolant 110 is used to cool the pipeline 110 when it is overheated. However, embodiments of the present invention are not limited thereto, and the controller (not shown) may issue an alarm or Lock the cooling unit to stop the plasma discharge. A controller (not shown) receives surface temperature information from the line 110 of the temperature sensor 157. As described above, the temperature sensor 157 is mounted on the outer peripheral surface of the line 110, and the detection line 110 The surface temperature information is transmitted to the controller (not shown) by the surface temperature information detected by the pipeline 110. Since the preset temperature is stored in the controller (not shown), if the surface temperature of the pipeline 110 transmitted from the temperature sensor 157 is equal to or greater than a preset temperature, the controller (not shown) It can be judged that the pipeline 110 is overheated.

【0043】[0043]

更詳細來說,一第一預設溫度及一第二預設溫度係儲存在控制器(圖中未示)中,第一預設溫度係作為判斷管路110是否過熱的基礎溫度,且為防止管路110損壞的最高溫度,若管路110的表面溫度資訊係等於或大於此第一預設溫度,控制器(圖中未示)判斷此管路110為一過熱狀態,並控制冷卻單元冷卻管路110。第二預設溫度係作為判斷管路110是否已冷卻的基礎溫度,第二預設溫度具有一溫度值可以等於或低於第一預設溫度,若第二預設溫度與第一預設溫度具有相同的預設值,冷卻管路110所需之前可以被減少,若第二預設溫度比第一預設溫度具有一較低的預設值,則冷卻單元的運作時間將會增加。In more detail, a first preset temperature and a second preset temperature are stored in a controller (not shown), and the first preset temperature is used as a base temperature for determining whether the pipeline 110 is overheated, and The maximum temperature at which the pipeline 110 is prevented from being damaged. If the surface temperature information of the pipeline 110 is equal to or greater than the first preset temperature, the controller (not shown) determines that the pipeline 110 is in an overheated state and controls the cooling unit. Cooling line 110. The second preset temperature is used as a base temperature for determining whether the pipeline 110 has been cooled, and the second preset temperature has a temperature value that may be equal to or lower than the first preset temperature, and if the second preset temperature is the first preset temperature With the same preset value, the cooling line 110 can be previously reduced. If the second preset temperature has a lower preset value than the first preset temperature, the operating time of the cooling unit will increase.

【0044】[0044]

當控制器(圖中未示)判斷管路110過熱時,控制器會透過冷卻劑注入閥151注入冷卻劑到殼體140之分離空間內,此冷卻劑可以是一冷媒氣體或冷卻水。貯放有冷卻劑的貯存容器(圖中未示)和冷卻劑注入閥151係互相連接,若控制器(圖中未示)判斷管路110過熱,冷卻劑係透過冷卻劑注入閥151注入殼體140的分離空間內。同時,一冷卻劑注入孔133係形成於殼體140上,以便使冷卻劑注入閥151可以連接至殼體140並透過冷卻劑注入孔133與殼體140導通,一般而言,殼體140與冷卻劑注入閥151係互相連接,且彼此係透過冷卻劑注入孔133互相導通。When the controller (not shown) judges that the pipeline 110 is overheated, the controller injects coolant into the separation space of the casing 140 through the coolant injection valve 151, which may be a refrigerant gas or cooling water. The storage container (not shown) in which the coolant is stored and the coolant injection valve 151 are connected to each other. If the controller (not shown) judges that the pipe 110 is overheated, the coolant is injected into the casing through the coolant injection valve 151. Within the separation space of the body 140. At the same time, a coolant injection hole 133 is formed in the casing 140 so that the coolant injection valve 151 can be connected to the casing 140 and communicated with the casing 140 through the coolant injection hole 133. Generally, the casing 140 is The coolant injection valves 151 are connected to each other and are electrically connected to each other through the coolant injection holes 133.

【0045】[0045]

一冷卻劑排出孔134更可形成於殼體140上使冷卻劑排出孔134面對冷卻劑注入孔133的位置,且冷卻劑回收器153係連接至此冷卻劑排出孔134,以便與冷卻劑排出孔134導通。透過冷卻劑注入孔133將冷卻劑注入至殼體140的分離空間,並於殼體140的分離空間內流動,使用冷卻劑來冷卻管路110,然後透過冷卻劑排出孔134將冷卻劑排出至冷卻劑回收器153中。舉例來說,冷卻劑回收器153包含有一回收槽153a以及一熱交換器153b,冷卻劑排出至冷卻劑回收器153並貯存在回收槽153a,並利用熱交換器153b冷卻。另外,冷卻劑可以先利用熱交換器153b冷卻後,再貯存至回收槽153a中,貯存在冷卻器回收器153內的冷卻劑可以重複使用並透過冷卻劑注入閥151注入至殼體140的分離空間內,以冷卻管路110。如上面所述,冷卻劑回收器153包含有回收槽153a和熱交換器153b,然而,本發明之實施例並不僅限定於此,此冷卻劑回收器153可以具有管路之形狀,如上面所述,冷卻劑係收集並重複使用,然而,冷卻劑可能無法重複使用,但可以從回收槽排出並排放出去,在此狀況下,空氣可以做為冷卻劑,當冷卻劑排出時,冷卻劑可以使用一風扇排出至外部。A coolant discharge hole 134 may be formed on the casing 140 at a position where the coolant discharge hole 134 faces the coolant injection hole 133, and the coolant recovery unit 153 is connected to the coolant discharge hole 134 to be discharged with the coolant. The hole 134 is turned on. The coolant is injected into the separation space of the casing 140 through the coolant injection hole 133, and flows in the separation space of the casing 140, and the coolant 110 is used to cool the pipe 110, and then the coolant is discharged through the coolant discharge hole 134 to In the coolant recovery unit 153. For example, the coolant recovery unit 153 includes a recovery tank 153a and a heat exchanger 153b, and the coolant is discharged to the coolant recovery unit 153 and stored in the recovery tank 153a, and is cooled by the heat exchanger 153b. Further, the coolant may be first cooled by the heat exchanger 153b and then stored in the recovery tank 153a, and the coolant stored in the cooler recovery unit 153 may be reused and injected into the casing 140 through the coolant injection valve 151. In the space, the pipeline 110 is cooled. As described above, the coolant recovery unit 153 includes the recovery tank 153a and the heat exchanger 153b. However, the embodiment of the present invention is not limited thereto, and the coolant recovery unit 153 may have a shape of a pipe, as described above. As mentioned, the coolant is collected and reused. However, the coolant may not be reused, but it may be discharged from the recovery tank and discharged. In this case, the air may act as a coolant, and when the coolant is discharged, the coolant may Use a fan to discharge to the outside.

【0046】[0046]

由於電漿反應器200一但開始運作,一般就會持續的運作而 不會停止運作,所以在廢氣被分解時會產生高溫的熱而損壞到電漿反應器200,尤其是,最大的風險在於當廢氣被分解所產生的熱會直接轉移而使管路110因過熱而損壞。但是,當有提供冷卻單元時,如同本發明之實施例,若管路110的表面溫度係等於或大於預設溫度時,冷卻單元會利用注入冷媒氣體至管路110中來冷卻過熱的管路110,以防止管路110損壞,並延長管路110的壽命。Since the plasma reactor 200 is initially operated, it generally operates continuously without stopping operation, so that high temperature heat is generated when the exhaust gas is decomposed and the plasma reactor 200 is damaged. In particular, the greatest risk lies in When the exhaust gas is decomposed, the heat generated is directly transferred to cause the pipe 110 to be damaged by overheating. However, when a cooling unit is provided, as in the embodiment of the present invention, if the surface temperature of the line 110 is equal to or greater than a preset temperature, the cooling unit utilizes injection of refrigerant gas into the line 110 to cool the superheated line. 110 to prevent damage to the line 110 and to extend the life of the line 110.

【0047】[0047]

同時,當冷卻劑係為冷卻水時,電漿反應器200更包含有一絕緣部125,因為第一電極部120係作為驅動電極而安裝在合適的管路110外周圍表面上,當冷卻水注入至此分離空間內,第一電極部120可能會與冷卻水接觸而損壞,且短路亦可能發生,因此,絕緣部125可以保護第一電極部120。絕緣部125係由絕緣材料或介電物質所構成,並形成為管狀形式,以便合適的安裝在管路110的外周圍表面。另外,絕緣部125環繞溫度感測器157周圍,並保護第一電極部120和溫度感測器157接觸到冷卻水。Meanwhile, when the coolant is cooling water, the plasma reactor 200 further includes an insulating portion 125 because the first electrode portion 120 is mounted as a driving electrode on the outer peripheral surface of the appropriate pipe 110, when the cooling water is injected. At this point in the separation space, the first electrode portion 120 may be damaged by contact with the cooling water, and a short circuit may also occur, and therefore, the insulating portion 125 may protect the first electrode portion 120. The insulating portion 125 is composed of an insulating material or a dielectric substance and is formed in a tubular form so as to be properly mounted on the outer peripheral surface of the pipe 110. In addition, the insulating portion 125 surrounds the temperature sensor 157 and protects the first electrode portion 120 and the temperature sensor 157 from contact with the cooling water.

【0048】[0048]

如第8圖所示之電漿反應器200a之實施例,其中溫度感測器157和冷卻單元更被進一步包含在第3圖所示之電漿反應器100a,如前面所述。第9圖所示之電漿反應器200b之實施例,其中溫度感測器157和冷卻單元更進一步包含在第4圖所示之電漿反應器100b中,如前面所述。如第10圖所示之電漿反應器300之實施例,其中溫度感測器157和冷卻單元更被進一步包含在第5圖所示之電漿反應器100c,如前面所述。如第11圖所示之電漿反應器300a之實施例,其中溫度感測器157和冷卻單元更被進一步包含在第6圖所示之電漿反應器100d,如前面所述。An embodiment of the plasma reactor 200a as shown in Fig. 8 wherein the temperature sensor 157 and the cooling unit are further included in the plasma reactor 100a shown in Fig. 3 as previously described. An embodiment of the plasma reactor 200b shown in Fig. 9, wherein the temperature sensor 157 and the cooling unit are further contained in the plasma reactor 100b shown in Fig. 4, as described above. An embodiment of the plasma reactor 300 as shown in Fig. 10, wherein the temperature sensor 157 and the cooling unit are further included in the plasma reactor 100c shown in Fig. 5, as described above. An embodiment of the plasma reactor 300a as shown in Fig. 11 wherein the temperature sensor 157 and the cooling unit are further included in the plasma reactor 100d shown in Fig. 6, as previously described.

【0049】[0049]

第12圖至第14圖係為根據本發明之再一實施例的電漿反應器400示意圖, 根據本發明之一實施例的電漿反應器400包含有一管路210、第一電極部220、第二電極部230、一緩衝單元(圖中未示)、一殼體240、一溫度感測器250以及一冷卻單元260。首先,電漿反應器200之管路210係為一流動路徑,提供廢氣流動,管路210係形成為圓柱形,且其沿著管路210的縱長方向貫穿。管路210係由包含有高介電物質之介電物質所形成,例如 氧化鋁、氧化鋯(ZrO2 )、氧化釔(Y2 O3 )、藍寶石、石英管路或玻璃管路。尤其是,管路210的抗蝕刻性可以利用互相混合的氧化鋁和氧化釔粉末進行燒結或是利用熱噴塗將具有優異抗濺鍍之氧化釔形成在氧化鋁材料上。12 to 14 are schematic views of a plasma reactor 400 according to still another embodiment of the present invention. The plasma reactor 400 according to an embodiment of the present invention includes a conduit 210, a first electrode portion 220, The second electrode portion 230, a buffer unit (not shown), a housing 240, a temperature sensor 250, and a cooling unit 260. First, the line 210 of the plasma reactor 200 is a flow path that provides exhaust gas flow, and the line 210 is formed in a cylindrical shape and penetrates along the longitudinal direction of the line 210. The conduit 210 is formed from a dielectric material comprising a high dielectric species such as alumina, zirconia (ZrO 2 ), yttria (Y 2 O 3 ), sapphire, quartz tubing or glass tubing. In particular, the etching resistance of the tube 210 can be sintered by using alumina and cerium oxide powder mixed with each other or by using thermal spraying to form cerium oxide having excellent sputtering resistance on the alumina material.

【0050】[0050]

第一電極部220 係安裝在匹配的管路210之外周圍表面且環繞在管路210的外周圍表面,並與該第二電極部230間隔設置,其係將詳細說明餘後,以在第一電極部220與第二電極部230之間產生電漿放電。第一電極部220係形成管狀形式,以便環繞在管路110之外周圍表面。由於第一電極部220係作為驅動電極,所以施加交流(AC)電壓給第一電極部220。參考第12圖所示,第一電極部220係形成具有較大的長度以沿著管路210之縱長方向,但並不限定於此,可以提供複數個第一電極部220,使電壓可以在不同週期施加在這些第二電極部220。緩衝單元(圖中未示)具有一管狀結構係插設在管路210與第一電極部220之間,緩衝單元係以具有導電性或介電物質之材料所構成,並具有彈性,如此使得管路210與第一電極部220可以互相緊密接觸。The first electrode portion 220 is mounted on the outer surface of the matching pipe 210 and surrounds the outer peripheral surface of the pipe 210, and is spaced apart from the second electrode portion 230, which will be described in detail later. A plasma discharge is generated between the one electrode portion 220 and the second electrode portion 230. The first electrode portion 220 is formed in a tubular form so as to surround the peripheral surface outside the tube 110. Since the first electrode portion 220 functions as a driving electrode, an alternating current (AC) voltage is applied to the first electrode portion 220. Referring to FIG. 12, the first electrode portion 220 is formed to have a large length to extend along the longitudinal direction of the tube 210, but is not limited thereto, and a plurality of first electrode portions 220 may be provided to enable voltage These second electrode portions 220 are applied at different periods. The buffer unit (not shown) has a tubular structure interposed between the pipe 210 and the first electrode portion 220. The buffer unit is made of a material having a conductive or dielectric substance and has elasticity, so that The tube 210 and the first electrode portion 220 may be in close contact with each other.

【0051】[0051]

第二電極部230係連接至管路210之一端或二端,以便與管路210導通 , 第二電極部230係作為接地電極,使第一電極部220與第二電極部230之間可以產生電漿放電。因此,第二電極部230係由金屬組成。從製程腔室排出的廢氣會被引入其中一個第二電極部230,在管路210中流動,並從另一個排出,因此如第12圖所示,一廢氣入口201形成在其中一個第二電極部230,且廢氣出口203形成在另一個,雖然在圖式中,第二電極部230之橫截面係沿著管路210縱長方向逐漸減少,但本發明之實施例並不僅限定於此,第二電極部230亦可以形成具有沿著管路210之縱長方向均勻的橫截面。The second electrode portion 230 is connected to one end or both ends of the pipeline 210 to be electrically connected to the pipeline 210, and the second electrode portion 230 serves as a ground electrode, so that the first electrode portion 220 and the second electrode portion 230 can be generated. Plasma discharge. Therefore, the second electrode portion 230 is composed of metal. Exhaust gas discharged from the process chamber is introduced into one of the second electrode portions 230, flows in the line 210, and is discharged from the other, so that as shown in Fig. 12, an exhaust gas inlet 201 is formed in one of the second electrodes. The portion 230 and the exhaust gas outlet 203 are formed on the other, although in the drawing, the cross section of the second electrode portion 230 gradually decreases along the longitudinal direction of the pipe 210, the embodiment of the present invention is not limited thereto. The second electrode portion 230 may also be formed to have a uniform cross section along the longitudinal direction of the tube 210.

【0052】[0052]

廢氣係被引入至廢氣入口201,並在管路210內流動,且廢氣具有一定的壓力存在於管路210內。在此情況下,當AC電壓被施加於作為驅動電壓之第一電極部220時,電子開始在第一電極部220與作為接地電極的第二電極部230之間移動,且發生電漿放電,以分解此廢氣。The exhaust gas is introduced into the exhaust gas inlet 201 and flows within the conduit 210, and the exhaust gas has a certain pressure present in the conduit 210. In this case, when an AC voltage is applied to the first electrode portion 220 as the driving voltage, electrons start to move between the first electrode portion 220 and the second electrode portion 230 as the ground electrode, and plasma discharge occurs. To decompose this exhaust gas.

【0053】[0053]

殼體240係環繞於管路210周圍,以保護管路210之外周圍表面以及安裝在管路210之外周圍表面的第一電極部220。殼體240係在殼體240與管路210之外周圍表面之間構成一分離空間。此殼體一般由金屬所形成。The housing 240 surrounds the conduit 210 to protect the outer surface of the conduit 210 and the first electrode portion 220 mounted on the peripheral surface outside the conduit 210. The housing 240 forms a separation space between the housing 240 and the outer surface of the conduit 210. This housing is generally formed of metal.

【0054】[0054]

溫度感測器250係安裝在一殼體240內,詳言之,溫度感測器250係接觸管路210的外周圍表面或殼體240的內周圍表面,以便偵測管路210的表面溫度、殼體240的表面溫度或位於管路210和殼體240之間的分離空間。如上面所述,溫度感測器250係偵測管路210或殼體240的表面溫度或是分離空間的溫度,並傳送溫度資訊至冷卻單元260,此部分將詳述於後。為了更安全的使用電漿反應器400,它應更有效率的偵測管路210的表面溫度勝於偵測殼體240的表面溫度。在本實施例中,係偵測管路210的表面溫度。The temperature sensor 250 is mounted in a housing 240. In detail, the temperature sensor 250 contacts the outer peripheral surface of the tube 210 or the inner peripheral surface of the housing 240 to detect the surface temperature of the tube 210. The surface temperature of the housing 240 or a separation space between the conduit 210 and the housing 240. As described above, the temperature sensor 250 detects the surface temperature of the line 210 or the housing 240 or the temperature of the separation space, and transmits temperature information to the cooling unit 260, which will be described later in detail. In order to use the plasma reactor 400 more safely, it should more efficiently detect the surface temperature of the line 210 than to detect the surface temperature of the housing 240. In the present embodiment, the surface temperature of the line 210 is detected.

【0055】[0055]

當廢氣被電漿放電分解時,冷卻單元260可以防止管路210因熱產生而引起的過熱,此乃因當廢氣分解產生的熱會直接傳導給管路210,因為熱會從管路210傳導至殼體240,使得判斷管路110是否過熱變得較困難。因此,將溫度感測器250安裝在管路210的表面比裝設在殼體240的表面更有效率,當溫度感測器250偵測關於殼體240的表面溫度或分離空間溫度之資訊時,作為判斷管路210是否過熱之基礎的預設溫度可能要被設定為低於溫度感測器250偵測關於管路210之表面溫度之資訊時的溫度。When the exhaust gas is decomposed by the plasma discharge, the cooling unit 260 can prevent the pipe 210 from being overheated due to heat generation, because the heat generated when the exhaust gas is decomposed is directly transmitted to the pipe 210 because heat is conducted from the pipe 210. To the housing 240, it becomes difficult to determine whether the line 110 is overheated. Therefore, mounting the temperature sensor 250 on the surface of the conduit 210 is more efficient than mounting the surface of the housing 240 when the temperature sensor 250 detects information about the surface temperature of the housing 240 or the temperature of the separation space. The preset temperature, which is the basis for determining whether the line 210 is overheated, may be set to be lower than the temperature at which the temperature sensor 250 detects information about the surface temperature of the line 210.

【0056】[0056]

如上面所述,當管路210的表面溫度等於或大於預設溫度時,冷卻單元260係利用注入一冷卻劑到管路210中來冷卻管路210。如第13圖所示,此冷卻單元260包含一控制器261、一冷卻劑注入閥263和一冷卻劑回收器264。控制器261係判斷管路210過熱時會使用冷卻劑來冷卻管路210。然而,本發明之實施例並不僅限定於此,控制器261可以發出警報或是鎖住冷卻單元來停止電漿放電。控制器261接收來自溫度感測器250的管路210之表面溫度資訊,如上面所述,溫度感測器250係安裝在管路210的外周圍表面,偵測管路210的表面溫度資訊,並傳送偵測到的管路210表面溫度資訊給控制器261。由於預設溫度係儲存於控制器261中,假如從溫度感測器250傳送來的管路210之表面溫度係等於或大於一預設溫度時,控制器261即可以判斷此管路210過熱。As described above, when the surface temperature of the line 210 is equal to or greater than the preset temperature, the cooling unit 260 cools the line 210 by injecting a coolant into the line 210. As shown in FIG. 13, the cooling unit 260 includes a controller 261, a coolant injection valve 263, and a coolant collector 264. The controller 261 determines that the line 210 is used to cool the line 210 when it is overheated. However, embodiments of the present invention are not limited thereto, and the controller 261 may issue an alarm or lock the cooling unit to stop the plasma discharge. The controller 261 receives the surface temperature information of the pipeline 210 from the temperature sensor 250. As described above, the temperature sensor 250 is mounted on the outer peripheral surface of the pipeline 210 to detect the surface temperature information of the pipeline 210. And transmitting the detected surface temperature information of the pipeline 210 to the controller 261. Since the preset temperature is stored in the controller 261, if the surface temperature of the pipeline 210 transmitted from the temperature sensor 250 is equal to or greater than a predetermined temperature, the controller 261 can judge that the pipeline 210 is overheated.

【0057】[0057]

詳言之,一第一預設溫度及一第二預設溫度係儲存在控制器261中,第一預設溫度係作為判斷管路210是否過熱的基礎溫度,且為防止管路210損壞的最高溫度,若管路210的表面溫度資訊係等於或大於此第一預設溫度,控制器261判斷此管路210為一過熱狀態,並控制冷卻單元260冷卻管路210。第二預設溫度係作為判斷管路210是否已冷卻的基礎溫度,第二預設溫度具有一溫度值可以等於或低於第一預設溫度,若第二預設溫度與第一預設溫度具有相同的預設值,冷卻管路210所需之前可以被減少,若第二預設溫度比第一預設溫度具有一較低的預設值,則冷卻單元260的運作時間將會增加。In detail, a first preset temperature and a second preset temperature are stored in the controller 261, and the first preset temperature is used as a base temperature for determining whether the pipeline 210 is overheated, and to prevent damage of the pipeline 210. The maximum temperature, if the surface temperature information of the pipeline 210 is equal to or greater than the first preset temperature, the controller 261 determines that the pipeline 210 is in an overheated state, and controls the cooling unit 260 to cool the pipeline 210. The second preset temperature is used as a base temperature for determining whether the pipeline 210 has been cooled, and the second preset temperature has a temperature value that may be equal to or lower than the first preset temperature, and if the second preset temperature is the first preset temperature With the same preset value, the cooling line 210 can be previously reduced. If the second preset temperature has a lower preset value than the first preset temperature, the operating time of the cooling unit 260 will increase.

【0058】[0058]

當控制器261判斷管路210過熱時,控制器261會透過冷卻劑注入閥263注入冷卻劑到殼體240之分離空間內,此冷卻劑包含一冷媒氣體或冷卻水。貯放有冷卻劑的貯存容器(圖中未示)和冷卻劑注入閥263係互相連接,若控制器26判斷管路210過熱時,冷卻劑係透過冷卻劑注入閥263注入殼體240的分離空間內。同時,一冷卻劑注入孔241係形成於殼體240上,以便使冷卻劑注入閥263可以連接至殼體240並透過冷卻劑注入孔241與殼體240導通,一般而言,殼體240與冷卻劑注入閥263係互相連接,且彼此係透過冷卻劑注入孔241互相導通。When the controller 261 determines that the line 210 is overheated, the controller 261 injects coolant into the separation space of the casing 240 through the coolant injection valve 263, and the coolant contains a refrigerant gas or cooling water. The storage container (not shown) in which the coolant is stored and the coolant injection valve 263 are connected to each other. If the controller 26 determines that the pipe 210 is overheated, the coolant is injected into the casing 240 through the coolant injection valve 263. Within the space. At the same time, a coolant injection hole 241 is formed on the casing 240 so that the coolant injection valve 263 can be connected to the casing 240 and communicated with the casing 240 through the coolant injection hole 241. Generally, the casing 240 is The coolant injection valves 263 are connected to each other and are electrically connected to each other through the coolant injection holes 241.

【0059】[0059]

一冷卻劑排出孔245更可形成於殼體240上使冷卻劑排出孔245面對冷卻劑注入孔241的位置,且冷卻劑回收器264係連接至此冷卻劑排出孔245,以便與冷卻劑排出孔245導通。透過冷卻劑注入孔241將冷卻劑注入至殼體240的分離空間,並於殼體240的分離空間內流動,使用冷卻劑來冷卻管路210,然後透過冷卻劑排出孔245將冷卻劑排出至冷卻劑回收器264中。舉例來說,冷卻劑回收器264包含有一回收槽264a以及一熱交換器264b,冷卻劑排出至冷卻劑回收器264並貯存在回收槽264a,並利用熱交換器264b冷卻。另外,冷卻劑可以先利用熱交換器264b冷卻後,再貯存至回收槽264a中,貯存在冷卻器回收器264內的冷卻劑可以重複使用並透過冷卻劑注入閥261注入至殼體240的分離空間內,以冷卻管路210。如上面所述,冷卻劑回收器264包含有回收槽264a和熱交換器264b,然而,本發明之實施例並不僅限定於此,此冷卻劑回收器264可以具有管路之形狀,如上面所述,冷卻劑係收集並重複使用,然而,冷卻劑可能無法重複使用,但可以從回收槽排出並排放出去,在此狀況下,空氣可以做為冷卻劑,當冷卻劑排出時,冷卻劑可以使用一風扇排出至外部。A coolant discharge hole 245 may be formed on the casing 240 at a position where the coolant discharge hole 245 faces the coolant injection hole 241, and the coolant recovery unit 264 is connected to the coolant discharge hole 245 to be discharged with the coolant. Hole 245 is turned on. The coolant is injected into the separation space of the casing 240 through the coolant injection hole 241, flows in the separation space of the casing 240, cools the pipe 210 using the coolant, and then discharges the coolant through the coolant discharge hole 245. In the coolant recovery unit 264. For example, the coolant recovery unit 264 includes a recovery tank 264a and a heat exchanger 264b. The coolant is discharged to the coolant recovery unit 264 and stored in the recovery tank 264a, and is cooled by the heat exchanger 264b. Further, the coolant may be first cooled by the heat exchanger 264b and then stored in the recovery tank 264a, and the coolant stored in the cooler recovery unit 264 may be reused and injected into the casing 240 through the coolant injection valve 261. In the space, the pipeline 210 is cooled. As described above, the coolant recovery unit 264 includes the recovery tank 264a and the heat exchanger 264b. However, the embodiment of the present invention is not limited thereto, and the coolant recovery unit 264 may have a shape of a pipe, as described above. As mentioned, the coolant is collected and reused. However, the coolant may not be reused, but it may be discharged from the recovery tank and discharged. In this case, the air may act as a coolant, and when the coolant is discharged, the coolant may Use a fan to discharge to the outside.

【0060】[0060]

由於電漿反應器400一但開始運作,一般就會持續的運作而 不會停止運作,所以在廢氣被分解時會產生高溫的熱而損壞到電漿反應器400,尤其是,最大的風險在於當廢氣被分解所產生的熱會直接轉移而使管路210因過熱而損壞。但是,當有提供冷卻單元260時,如同本發明之實施例,若管路210的表面溫度係等於或大於預設溫度時,冷卻單元260會利用注入冷媒氣體至管路210中來冷卻過熱的管路210,以防止管路210損壞,並延長管路210的壽命。Since the plasma reactor 400 is initially operated, it generally operates continuously without stopping operation, so that high temperature heat is generated when the exhaust gas is decomposed and damages to the plasma reactor 400. In particular, the greatest risk lies in The heat generated when the exhaust gas is decomposed is directly transferred to cause the pipe 210 to be damaged by overheating. However, when the cooling unit 260 is provided, as in the embodiment of the present invention, if the surface temperature of the pipeline 210 is equal to or greater than the preset temperature, the cooling unit 260 may use the injected refrigerant gas into the pipeline 210 to cool the overheated. Line 210 prevents damage to line 210 and extends the life of line 210.

【0061】[0061]

當冷卻劑為冷卻水時,電漿反應400更包含有一絕緣部225,因為第一電極部220係作為驅動電極而安裝在合適的管路210外周圍表面上,當冷卻水注入至此分離空間內,第一電極部220可能會與冷卻水接觸而損壞,且短路亦可能發生,因此,絕緣部225可以保護第一電極部220。絕緣部225係由絕緣材料或介電物質所構成,並形成為管狀形式,以便合適的安裝在管路210的外周圍表面。另外,絕緣部225環繞在溫度感測器250周圍,並保護第一電極部220和溫度感測器250接觸到冷卻水。When the coolant is cooling water, the plasma reaction 400 further includes an insulating portion 225 because the first electrode portion 220 is mounted as a driving electrode on the outer peripheral surface of the appropriate pipe 210, and the cooling water is injected into the separation space. The first electrode portion 220 may be damaged by contact with the cooling water, and a short circuit may also occur, and therefore, the insulating portion 225 may protect the first electrode portion 220. The insulating portion 225 is composed of an insulating material or a dielectric substance and is formed in a tubular form so as to be properly mounted on the outer peripheral surface of the pipe 210. In addition, the insulating portion 225 surrounds the temperature sensor 250 and protects the first electrode portion 220 and the temperature sensor 250 from contact with the cooling water.

【0062】[0062]

第15圖係為根據本發明之再一實施例的電漿反應器400a示意圖,在本實施例中,第二電極部230a可能不會連接至管路210,以便導通管路210,但可安裝在適當的管路210外周圍表面,並環繞在管路210外周圍表面上,如同第一電極部220。在此狀況下,第二電極部230a係可形成為管狀,當第二電極部230a安裝在管路210上時,第二電極部230a係與第一電極部220間隔設置。一個相對的正(+)電壓係被施加於第一電極部220與第二電極部230a的其中之一,一個相對負(-)電壓則被施加於另一個。當第二電極部230a安裝在環繞於管路210之外周圍表面時,形成有一廢氣入口201或一廢氣出口202的凸緣(圖中未示)可以耦接於管路210之二端,以耦合至排出線,以將電漿反應器400a連接至製程腔室10或真空泵30。Figure 15 is a schematic view of a plasma reactor 400a according to still another embodiment of the present invention. In this embodiment, the second electrode portion 230a may not be connected to the conduit 210 to conduct the conduit 210, but may be installed. On the outer peripheral surface of the appropriate conduit 210, and surrounding the outer peripheral surface of the conduit 210, as the first electrode portion 220. In this case, the second electrode portion 230a may be formed in a tubular shape, and when the second electrode portion 230a is mounted on the tube 210, the second electrode portion 230a is spaced apart from the first electrode portion 220. A relative positive (+) voltage is applied to one of the first electrode portion 220 and the second electrode portion 230a, and a relatively negative (-) voltage is applied to the other. When the second electrode portion 230a is mounted on a peripheral surface surrounding the pipeline 210, a flange (not shown) formed with an exhaust gas inlet 201 or an exhaust gas outlet 202 may be coupled to both ends of the pipeline 210 to It is coupled to the discharge line to connect the plasma reactor 400a to the process chamber 10 or the vacuum pump 30.

【0063】[0063]

第16圖係為根據本發明之再一實施例的電漿反應器400b示意圖,參考第16圖所示,根據本發明之再一實施例的電漿反應器400b包含有一線圈部230’,其係以螺旋形式環繞於管路210之外周圍表面上,當自外部施加一電流給線圈部230’時,射頻(RF)電漿放電會發生線圈部230’,使得流入管路110內之廢氣可以被分解。Figure 16 is a schematic view of a plasma reactor 400b according to still another embodiment of the present invention. Referring to Figure 16, a plasma reactor 400b according to still another embodiment of the present invention includes a coil portion 230'. Surrounding the outer surface of the pipeline 210 in a spiral form, when a current is applied to the coil portion 230' from the outside, the radio frequency (RF) plasma discharge may occur in the coil portion 230', so that the exhaust gas flowing into the pipeline 110 Can be broken down.

【0064】[0064]

第17圖係為根據本發明之再一實施例的電漿反應器400c示意圖,參考第17圖所示,電漿反應器400c大部分的構造係相同於第12圖至第14圖所示之電漿反應器400,然而,此溫度感測器並未包含在本實施例中。在本實施例中,電漿反應器400c具有一結構,其中無論是偵測管路210之表面溫度、殼體240之表面溫度或是分離空間之溫度,係利用冷卻單元260來經常性將冷卻劑注入管路210中,以防止管路210過熱。因此,在本實施例中,毋須藉由偵測管路210的表面溫度、殼體240的表面溫度或分離空間的溫度來判斷是否過熱,所以可以從冷卻單元260中省略一控制器。Figure 17 is a schematic view of a plasma reactor 400c according to still another embodiment of the present invention. Referring to Figure 17, most of the structure of the plasma reactor 400c is the same as that shown in Figures 12 to 14. The plasma reactor 400, however, this temperature sensor is not included in this embodiment. In the present embodiment, the plasma reactor 400c has a structure in which the surface temperature of the detection pipe 210, the surface temperature of the casing 240, or the temperature of the separation space is cooled by the cooling unit 260. The agent is injected into the line 210 to prevent the line 210 from overheating. Therefore, in the present embodiment, it is not necessary to determine whether or not overheating is detected by detecting the surface temperature of the pipe 210, the surface temperature of the casing 240, or the temperature of the separation space, so that a controller can be omitted from the cooling unit 260.

【0065】[0065]

使用冷卻單元26來注入冷卻劑亦可藉由工人手動來完成,儘管未示出,可以提供一計時器(圖中未示)來控制冷卻單元在每一設定時間時將冷卻劑注入分離空間內。The use of the cooling unit 26 to inject the coolant can also be done manually by a worker. Although not shown, a timer (not shown) can be provided to control the cooling unit to inject coolant into the separation space at each set time. .

【0066】[0066]

第18圖所示之電漿反應器400d係為第15圖所示之電漿反應器400a結構中省略溫度感測器之一實施例,第19圖所示之電漿反應器400e係為第16圖所示之電漿反應器400b結構中省略溫度感測器之一實施例,其係具有一結構,無論是偵測管路210之表面溫度、殼體240之表面溫度或是分離空間之溫度,係利用冷卻單元260來防止管路210過熱,如同第17圖所示之電漿反應器400c。The plasma reactor 400d shown in Fig. 18 is an embodiment in which the temperature sensor is omitted in the structure of the plasma reactor 400a shown in Fig. 15, and the plasma reactor 400e shown in Fig. 19 is the first An embodiment of the plasma reactor 400b shown in Fig. 16 omits an embodiment of the temperature sensor, which has a structure, whether it is detecting the surface temperature of the pipe 210, the surface temperature of the casing 240, or the separation space. The temperature is utilized by the cooling unit 260 to prevent the line 210 from overheating, as shown in Fig. 17 of the plasma reactor 400c.

【0067】[0067]

以上所述之實施例僅係為說明本發明之技術思想及特點,其的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and those skilled in the art can understand the contents of the present invention and implement them. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.

【0068】[0068]

工業實用性Industrial applicability

【0069】[0069]

根據本發明,使用一電漿反應器來淨化製程設備產生的廢氣,此電漿反應器可以製造來以防止電漿放電造成電漿反應器損壞並防止過熱,以及延長電漿反應器的壽命。In accordance with the present invention, a plasma reactor is used to purify the exhaust gases produced by the process equipment. The plasma reactor can be fabricated to prevent plasma discharge from damaging the plasma reactor and preventing overheating, as well as extending the life of the plasma reactor.

100‧‧‧電漿反應器 100‧‧‧ plasma reactor

110‧‧‧管路 110‧‧‧pipe

111‧‧‧第一層 111‧‧‧ first floor

112‧‧‧第二層 112‧‧‧ second floor

120‧‧‧第一電極部 120‧‧‧First electrode section

130‧‧‧第二電極部 130‧‧‧Second electrode

131‧‧‧廢氣入口 131‧‧‧Exhaust gas inlet

132‧‧‧廢氣出口 132‧‧‧Exhaust gas outlet

140‧‧‧殼體 140‧‧‧shell

Claims (28)

【第1項】[Item 1] 一種電漿反應器,其係設置於一製程腔室及一真空泵之間,以分解自該製程腔室排出的廢氣,該電漿反應器包括 :
一管路,其係供該廢氣流動且由一介電物質所構成;
複數第一電極部,安裝在該管路上,並覆蓋該管路的內部空間;以及
複數第二電極部,其係與該第一電極部間隔設置,並在該第一電極部與該第二電極部之間產生電漿放電,以分解該廢氣;
A plasma reactor is disposed between a process chamber and a vacuum pump to decompose exhaust gas discharged from the process chamber, the plasma reactor comprising:
a conduit for the exhaust gas to flow and consisting of a dielectric substance;
a plurality of first electrode portions mounted on the pipeline and covering an inner space of the pipeline; and a plurality of second electrode portions spaced apart from the first electrode portion, and at the first electrode portion and the second portion A plasma discharge is generated between the electrode portions to decompose the exhaust gas;
其中,為了避免因電漿放電所造成的該管路損壞,在電漿放電集中部分的該管路所形成的厚度係大於該管路周圍部分的厚度。Wherein, in order to avoid the pipeline damage caused by the plasma discharge, the thickness of the pipeline formed in the concentrated portion of the plasma discharge is greater than the thickness of the portion around the pipeline. 【第2項】[Item 2] 如請求項1所述之電漿反應器,更包括一殼體,其係環繞於該管路周圍,且在該殼體與該管路之外周圍表面之間形成一分離空間。A plasma reactor according to claim 1, further comprising a casing surrounding the pipe and forming a separation space between the casing and a peripheral surface outside the pipe. 【第3項】[Item 3] 如請求項1所述之電漿反應器,其中該第一電極部係形成一管狀形式,以裝配至該管路之該外周圍表面上。A plasma reactor according to claim 1, wherein the first electrode portion is formed in a tubular form to be fitted to the outer peripheral surface of the pipe. 【第4項】[Item 4] 如請求項3所述之電漿反應器,其中該第二電極部係連接該管路之一端或二端,以便與該管路導通;以及該管路之厚度係具有零(0)或更高的增加率,隨著該管路從該第一電極部更為接近該第二電極部。The plasma reactor of claim 3, wherein the second electrode portion is connected to one or both ends of the pipe to be electrically connected to the pipe; and the thickness of the pipe has zero (0) or more The rate of increase is higher as the line is closer to the second electrode portion from the first electrode portion. 【第5項】[Item 5] 如請求項3所述之電漿反應器,其中在該第二電極部係安裝在該管路對應的該外周圍表面且與該第一電極部間隔設置一預設距離;以及位於該第一電極部與該第二電極部之間的該管路中央部份係形成最厚者。The plasma reactor of claim 3, wherein the second electrode portion is mounted on the outer peripheral surface corresponding to the pipeline and spaced apart from the first electrode portion by a predetermined distance; and located at the first The central portion of the pipe between the electrode portion and the second electrode portion is formed to be the thickest. 【第6項】[Item 6] 如請求項5所述之電漿反應器,其中該管路之厚度係具有零(0)或更低的減少率,隨著該管路從位於該第一電極部與第二電極部之間的該管路中央部份更為接近該第一電極部與該第二電極部。The plasma reactor of claim 5, wherein the thickness of the pipe has a reduction rate of zero (0) or less, as the pipe is located between the first electrode portion and the second electrode portion The central portion of the tube is closer to the first electrode portion and the second electrode portion. 【第7項】[Item 7] 如請求項4所述之電漿反應器,其中該第一電極部係安裝在該管路之縱長方向的中心位置;以及該管路之厚度係逐漸增加,隨著該第一電極部從該管路之縱長方向的中心位置更為接近該管路的一端或二端。The plasma reactor according to claim 4, wherein the first electrode portion is installed at a center position of the pipe in the longitudinal direction; and the thickness of the pipe is gradually increased, along with the first electrode portion The center of the pipe in the longitudinal direction is closer to one or both ends of the pipe. 【第8項】[Item 8] 如請求項5所述之電漿反應器,其中該第一電極部與該第二電極部係基於該管路縱長方向之中心位置以相同距離彼此間隔設置;以及該管路之厚度係形成為均勻或較大者,隨著該第一電極部與該第二電極部從該管路二端更為接近位於該第一電極部與該第二電極部間之該管路中電漿放電集中之一區域。The plasma reactor according to claim 5, wherein the first electrode portion and the second electrode portion are spaced apart from each other by the same distance based on a center position of the pipe longitudinal direction; and the thickness of the pipe is formed In order to be uniform or larger, the first electrode portion and the second electrode portion are closer to the plasma discharge between the first electrode portion and the second electrode portion from the two ends of the tube. Concentrate on one area. 【第9項】[Item 9] 如請求項1所述之電漿反應器,其中該管路包括 :
一第一層,具有沿著該管路之縱長方向形成的一均勻厚度;以及
The plasma reactor of claim 1 wherein the conduit comprises:
a first layer having a uniform thickness formed along a longitudinal direction of the conduit;
一第二層,其係設置在該第一層之一內周圍表面上,且在電漿放電集中之部份的厚度係大於周圍部份之厚度。A second layer is disposed on a peripheral surface of one of the first layers, and a thickness of a portion concentrated in the plasma discharge is greater than a thickness of the surrounding portion. 【第10項】[Item 10] 如請求項9所述之電漿反應器,其中形成之該第二層係插設於該第一層中。The plasma reactor of claim 9, wherein the second layer formed is interposed in the first layer. 【第11項】[Item 11] 如請求項9所述之電漿反應器,其中該第二層係使用層疊、噴塗或浸泡形成於該第一層內。The plasma reactor of claim 9, wherein the second layer is formed in the first layer using lamination, spraying or dipping. 【第12項】[Item 12] 如請求項9所述之電漿反應器,其中該第二層係比該第一層具有更強的抗腐蝕性。The plasma reactor of claim 9, wherein the second layer is more resistant to corrosion than the first layer. 【第13項】[Item 13] 如請求項12所述之電漿反應器,其中該第二層包含氮化矽( Si3 N4 )或氧化釔( Y2 O3 ) 。The plasma reactor of claim 12, wherein the second layer comprises tantalum nitride (Si 3 N 4 ) or yttrium oxide (Y 2 O 3 ). 【第14項】[Item 14] 如請求項3所述之電漿反應器,其中該第二電極部係連接至該管路之一端或二端,以便與該管路導通;以及鄰近第二電極部位於覆蓋該第一電極部中之部份的該管路部份之厚度係形成有大於位於該第一電極部與該第二電極部間之該管路之厚度。The plasma reactor according to claim 3, wherein the second electrode portion is connected to one end or both ends of the pipe to be electrically connected to the pipe; and the adjacent second electrode portion is located to cover the first electrode portion. The thickness of the portion of the conduit portion is formed to be greater than the thickness of the conduit between the first electrode portion and the second electrode portion. 【第15項】[Item 15] 如請求項2所述之電漿反應器,更包括一冷卻單元,其係連接至該分離空間,以便與該分離空間導通,並可冷卻該管路,且該冷卻單元係提供一冷卻劑至該分離空間,以防止該管路過熱 。The plasma reactor according to claim 2, further comprising a cooling unit connected to the separation space to be electrically connected to the separation space and capable of cooling the pipeline, and the cooling unit provides a coolant to The separation space prevents the line from overheating. 【第16項】[Item 16] 如請求項15所述之電漿反應器,更包括一溫度感測器,其係設置於該管路上,以偵測該管路之表面溫度、該殼體之表面溫度及該分離空間之溫度,以判斷該殼體是否過熱,並傳送有關該管路表面溫度之資訊、有關該殼體表面溫度之資訊或有關該分離空間溫度之資訊。The plasma reactor of claim 15 further comprising a temperature sensor disposed on the pipeline to detect a surface temperature of the pipeline, a surface temperature of the casing, and a temperature of the separation space. To determine whether the housing is overheated, and to transmit information about the surface temperature of the pipeline, information about the surface temperature of the casing, or information about the temperature of the separation space. 【第17項】[Item 17] 如請求項16所述之電漿反應器,其中該冷卻單元包括:
一控制器,其係接收來自該溫度感測器之表面溫度資訊來判斷該管路是否過熱;
一冷卻劑注入閥,其係在該控制器判斷該管路過時,將冷卻劑注入至該分離空間;以及
The plasma reactor of claim 16, wherein the cooling unit comprises:
a controller that receives surface temperature information from the temperature sensor to determine whether the pipeline is overheated;
a coolant injection valve for injecting a coolant into the separation space when the controller determines that the pipeline is out of time;
一冷卻劑回收器,其係在該冷卻劑冷卻該管路之後,將該冷卻劑排出。A coolant recovery unit that discharges the coolant after the coolant cools the line. 【第18項】[Item 18] 如請求項17所述之電漿反應器,其中當該溫度感測器傳送之溫度資訊係等於或大於一第一預設溫度時,該控制器判斷該管路過熱。The plasma reactor of claim 17, wherein the controller determines that the pipeline is overheated when the temperature information transmitted by the temperature sensor is equal to or greater than a first predetermined temperature. 【第19項】[Item 19] 如請求項17所述之電漿反應器,其中當該溫度感測器傳送之溫度資訊係等於或小於一第二預設溫度(小於第一預設溫度)時,該控制器使用該冷卻劑冷卻該管路,並排出該冷卻劑。The plasma reactor according to claim 17, wherein the controller uses the coolant when the temperature information transmitted by the temperature sensor is equal to or less than a second preset temperature (less than the first preset temperature). The line is cooled and the coolant is discharged. 【第20項】[Item 20] 如請求項15所述之電漿反應器,其中該冷卻劑包括有一 冷媒氣體和冷卻水其中之一。A plasma reactor as claimed in claim 15 wherein the coolant comprises one of a refrigerant gas and a cooling water. 【第21項】[Item 21] 如請求項20所述之電漿反應器,其中該 冷媒氣體包括空氣或氮氣。A plasma reactor as claimed in claim 20, wherein the refrigerant gas comprises air or nitrogen. 【第22項】[Item 22] 如請求項20所述之電漿反應器,更包括一絕緣部係密封該第一電極部,以便在該冷卻劑是冷卻水時,可以保護該第一電極部 。The plasma reactor according to claim 20, further comprising an insulating portion sealing the first electrode portion to protect the first electrode portion when the coolant is cooling water. 【第23項】[Item 23] 如請求項22所述之電將反應器,其中該絕緣層係由一絕緣材料或介電物質所構成。The reactor of claim 22, wherein the insulating layer is comprised of an insulating material or a dielectric material. 【第24項】[Item 24] 如請求項15所述之電漿反應器,其中該冷卻單元包括:
一冷卻劑注入閥,其係連接該冷卻單元,以將冷卻劑注入至該分離空間;以及
The plasma reactor of claim 15 wherein the cooling unit comprises:
a coolant injection valve connected to the cooling unit to inject a coolant into the separation space;
一冷卻劑回收器,其係在該冷卻劑冷卻該管路之後將該冷卻劑排出,或是熱交換排出之該冷卻劑,並將該冷卻劑循環至該卻劑注入閥。A coolant recovery unit discharges the coolant after the coolant cools the line, or heat-exchanges the discharged coolant, and circulates the coolant to the agent injection valve.
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