CN111081517A - Anti-corrosion method of electrostatic chuck - Google Patents
Anti-corrosion method of electrostatic chuck Download PDFInfo
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- CN111081517A CN111081517A CN201811223895.XA CN201811223895A CN111081517A CN 111081517 A CN111081517 A CN 111081517A CN 201811223895 A CN201811223895 A CN 201811223895A CN 111081517 A CN111081517 A CN 111081517A
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- electrostatic chuck
- chamber
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- cleaning
- corrosion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides an anti-corrosion method of an electrostatic chuck, which is used for preventing active free radicals from corroding the electrostatic chuck. The invention also provides a chamber cleaning method of the plasma processing device. The method provided by the invention can effectively solve the problem that the adhesion layer of the electrostatic chuck is easy to corrode by high-activity free radicals, so that the electrostatic chuck can keep a good heat conduction function, the yield of the manufactured wafer can be obviously improved, in addition, the method provided by the invention does not need to use a blocking and controlling sheet, the process is simple and convenient, the cost is low, no additional pollution is generated, the protection effect is good, and the service lives of the plasma cavity and the electrostatic chuck can be greatly prolonged.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to an anti-corrosion method of an electrostatic chuck and a chamber cleaning method of a plasma processing device.
Background
In the field of semiconductor manufacturing, an electrostatic Chuck (ESC) is used to support a wafer (wafer) during a process by high-voltage electrostatic adsorption, and has been widely used in various processes such as photolithography, ion implantation, etching, and thin film.
Taking an etching process as an example, which is used to remove a deposited film (the region not covered by a mask layer), during the process, a portion of the byproducts that react to form polymers is pumped away by a vacuum system, and a portion of the byproducts adheres to the sidewalls of the processing chamber (chamber). Introducing a cleaning process into the manufacturing gap of a single wafer can effectively reduce the amount of by-products attached to the sidewall of the chamber.
In a common cleaning process, plasma (plasma) formed by high-power radio frequency of an electrode is matched with gas such as fluorine, oxygen and the like which are easy to dissociate into free radicals (radial) with strong chemical activity, in the cleaning process, the electrostatic chuck is directly exposed in the plasma, and fluorine and oxygen radicals can enter the inside of the electrostatic chuck through channels such as a heat conduction gas channel and a top pin through hole of the electrostatic chuck, so that an adhesion layer of the electrostatic chuck is directly corroded by the free radicals. As shown in fig. 1, a typical electrostatic chuck mainly includes a metal base 1, an adhesive layer 2 and an insulating layer 3 from bottom to top, wherein a heater is disposed in the adhesive layer 2 to conduct heat to a wafer through the insulating layer 3. When the adhesion layer is corroded, not only the chamber is contaminated by particles, but also the thermal conductivity of the electrostatic chuck is abnormal, and the unstable temperature of the electrostatic chuck causes the drift of the critical dimension (critical dimension) of the wafer, so that the yield of the wafer is reduced.
In the prior art, a dummy wafer (dummy wafer) is used to protect the electrostatic chuck from free radicals, but the use of the dummy wafer increases the manufacturing cost and reduces the wafer production efficiency. Therefore, the research on the anti-corrosion method of the electrostatic chuck with low manufacturing cost and high production efficiency has very important significance and practical value.
Disclosure of Invention
In order to overcome the defects in the prior art, one of the objectives of the present invention is to provide a method for preventing corrosion of an electrostatic chuck.
Another object of the present invention is to provide a chamber cleaning method of a plasma processing apparatus.
The invention provides an anti-corrosion method of an electrostatic chuck, which is used for preventing active free radicals from corroding the electrostatic chuck, wherein the anti-corrosion method is to introduce inert gas into a channel on the electrostatic chuck.
In the corrosion prevention method provided by the invention, the inert gas is helium.
In the corrosion prevention method provided by the invention, the pressure of the inert gas is 1 to 25 Torr.
In the corrosion prevention method provided by the invention, the channel is all or part of the heat-conducting gas channel and the ejector pin through hole which are arranged on the electrostatic chuck.
In the corrosion prevention method provided by the present invention, the active radical is a radical of fluorine and/or oxygen.
In the corrosion prevention method provided by the present invention, the active radicals are derived from radicals generated in a chamber cleaning step of a plasma processing apparatus.
The chamber cleaning method of the plasma processing device provided by the invention comprises the following steps: and (3) treating the electrostatic chuck in the cavity by using the corrosion prevention method in any one of the technical schemes in the cleaning process.
In the chamber cleaning method provided by the invention, the cleaning process is to clean the chamber by using plasma of gas containing fluorine and/or oxygen.
The method provided by the invention can effectively solve the problem that the adhesion layer of the electrostatic chuck is easy to corrode by high-activity free radicals, so that the electrostatic chuck can keep a good heat conduction function, the wafer is uniformly and stably heated, the yield of the manufactured wafer can be obviously improved, in addition, the method provided by the invention does not need to use a blocking and controlling sheet, the process is simple and convenient, the cost is low, no additional pollution is generated, the protection effect is good, and the service lives of the plasma cavity and the electrostatic chuck can be greatly prolonged.
Drawings
FIG. 1 is a schematic cross-sectional view of an electrostatic chuck using the corrosion prevention method of the present invention.
Wherein the reference numerals are as follows:
1. a metal substrate; 2. an adhesive layer; 201. a heater; 3. an insulating layer; 4. a heat-conducting gas channel; 5. a knock pin through hole; 601. a coolant inlet; 602. a coolant outlet;
A. a reactive free radical; B. an inert gas.
Detailed Description
To make the objects, technical solutions and advantages of the present invention clearer, example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," "said," and "at least one" are used to indicate the presence of one or more elements/components/parts/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and "third," etc. are used merely as labels, and are not limiting on the number of their objects.
One aspect of the present invention provides an anti-corrosion method for an electrostatic chuck, which is to prevent corrosion of the electrostatic chuck by active radicals, the anti-corrosion method comprising: and introducing inert gas into the channel on the electrostatic chuck.
As shown in fig. 1, a typical conventional electrostatic chuck mainly includes a metal base 1, an adhesion layer 2 and an insulation layer 3 from bottom to top, wherein a heater 201 is disposed in the adhesion layer 2, heat is conducted to a wafer through the insulation layer 3, and a dc electrode (not shown) is disposed in the insulation layer 3, so that the electrostatic chuck can adsorb the wafer for a processing process. The electrostatic chuck is also provided with a vertical channel which comprises a heat conduction gas channel 4 and a top pin through hole 5 of the wafer, wherein the heat conduction gas channel 4 is used for introducing heat conduction gas such as helium in the process. The electrostatic chuck is further provided with a cooling liquid channel, which comprises a cooling liquid inlet 601 and a cooling liquid outlet 602.
When the electrostatic chuck contacts the highly reactive radicals a, such as during plasma cleaning, the radicals are likely to enter the electrostatic chuck through the passages and damage the adhesion layer 2, which in turn causes the wafer yield to decrease and new particle contamination to occur. Therefore, the technical scheme of the invention is that when the electrostatic chuck contacts the active free radicals, the inert gas B is introduced into the channels at the same time, the inert gas B can block the active free radicals out of the channels, so that the static chuck adhesion layer 2 is prevented from being eroded by the free radicals, and the inert gas is only dissociated into an ion form under the plasma process, so that no other active free radical forms exist, and the effect of the existing cleaning process is not influenced.
The anti-corrosion method provided by the invention can effectively solve the problem that an adhesion layer in the electrostatic chuck is easily corroded by high-activity free radicals, so that the electrostatic chuck can keep a good heat conduction function, wafers are uniformly and stably heated, no additional particle pollution is generated, the service life of the electrostatic chuck is obviously prolonged, and the yield of the processed wafers can be obviously improved.
In one embodiment according to the present invention, the inert gas used in the present invention may be nitrogen (N)2) And common inert gases such as helium (He), argon (Ar), neon (Ne), krypton (Kr). In a preferred embodiment, the inert gas used in the present invention may be helium. In a conventional etching processHelium is often used as a heat transfer gas for heat transfer between the wafer and the electrostatic chuck, which is turned on during the etching process and is not used during the cleaning process. The invention also opens the helium gas on the back of the wafer while the cleaning process is carried out, so that the helium gas can play a role in preventing the adhesion layer of the electrostatic chuck from being corroded. The gas source, the delivery device, the pressure control device, the temperature control device and the like of the helium gas on the back of the crystal do not need to be changed, so the cost of the cleaning process is hardly increased, and the operation is easy.
In one embodiment according to the present invention, the pressure of the inert gas, such as helium, may be adjusted to prevent the reactive radicals from attacking the channels of the electrostatic chuck as required by the actual cleaning process. In a preferred embodiment, the inert gas may have a gas pressure varying between 1 and 25 Torr.
In one embodiment of the present invention, the corrosion prevention method of the present invention can be used in whole or in part on the electrostatic chuck, and the corrosion prevention effect of the electrostatic chuck can be achieved in whole or in part by selectively introducing inert gas into different channels or combinations (i.e., all or part of all the channels composed of the heat-conducting gas channel 4 and the lift pin through hole 5) on the electrostatic chuck.
In one embodiment according to the present invention, the electrostatic chuck suitable for the corrosion prevention method of the present invention can be all kinds of the semiconductor manufacturing field, and can be the typical structure shown in fig. 1, and can also be any modified structure thereof, wherein the adhesion layer is present and is susceptible to the active radical, and the corrosion prevention method of the present invention can be adopted.
In one embodiment, the method for preventing corrosion according to the present invention can be used in chamber cleaning steps of all etching processes in the semiconductor manufacturing field, including but not limited to etching processes of metal layers, dielectric layers, etc., and the recipe of the process gas used in the cleaning process is different due to the difference of the etching by-products, so long as the cleaning process is liable to generate active radicals, the method for preventing corrosion according to the present invention can be used.
In one embodiment according to the present invention, the reactive radical may be a moietyAll radicals harmful to the adhesion layer inside the electrostatic chuck, including but not limited to fluorine and oxygen radicals, may be generated during the cleaning process in the conductor manufacturing field. In a chamber cleaning process of a plasma processing apparatus, a common cleaning gas recipe includes O2And NF3、CF4、SF6And the like, which are easily dissociated into highly chemically active fluorine and oxygen radicals, and the corrosion prevention method of the present invention can be used to prevent the generated radicals from being corroded.
In another aspect of the present invention, a chamber cleaning method for a plasma processing apparatus is provided, in which an electrostatic chuck in a chamber is simultaneously treated by using the method for preventing corrosion of the electrostatic chuck according to the present invention during a chamber cleaning process.
The chamber cleaning method provided by the invention can add anti-corrosion treatment to the electrostatic chuck in the original cleaning process, avoids the erosion of active free radicals generated in the conventional cleaning process to the adhesion layer of the electrostatic chuck, has good protection effect, does not need to use a blocking and controlling sheet, and has simple process and low cost. The chamber cleaning method of the invention can obviously prolong the service time of the chamber and the service life of the electrostatic chuck, not only can improve the defect rate of the wafer and improve the yield, but also can further adjust the correlation between the wafer manufacture and the chamber cleaning (for example, adjusting the gas power output, the step time and the like in the cleaning process) due to the improvement of the cleaning process, thereby improving the wafer manufacture efficiency.
In one embodiment, the chamber cleaning method of the present invention can be used for chamber cleaning of all etching processes in the semiconductor manufacturing field, including but not limited to etching processes of metal layers, dielectric layers, etc., and the recipe of the process gas used for the cleaning process is different due to different etching byproducts, so long as the cleaning process is prone to generate active radicals. In a preferred embodiment, the chamber cleaning method is to clean the chamber using a plasma of a fluorine and/or oxygen containing gas, including but not limited to O2And NF3、CF4、SF6Gas containing equal fluorineThe fluorine and oxygen radicals are easy to dissociate into high-activity fluorine and oxygen radicals under the plasma process, and the chamber cleaning method can be used for preventing the corrosion of the radicals in the chamber cleaning process.
Industrial applicability
Generally, the service life of a single electrostatic chuck is about 5000 radio frequency hours (RF hours), and after the corrosion prevention method is adopted, the service life of the electrostatic chuck can be increased by about 50% of the RF hours, so that the corrosion prevention method can effectively prevent the electrostatic chuck from being corroded, and the service life is obviously prolonged.
After the chamber cleaning method is adopted, etching byproducts adhered to the side wall of the chamber can be removed, particle defects caused by corrosion of the electrostatic chuck adhesion layer can be effectively avoided, the defect rate of a wafer can be effectively improved by 1-2%, and the product yield is improved.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Claims (8)
1. The method for preventing the static sucker from being corroded by active free radicals is characterized in that inert gas is introduced into a channel on the static sucker.
2. The method of preventing corrosion according to claim 1, wherein the inert gas is helium.
3. The method according to claim 1 or 2, wherein the pressure of the inert gas is 1 to 25 Torr.
4. The corrosion prevention method according to claim 1 or 2, wherein the passage is all or part of a heat conductive gas passage provided on the electrostatic chuck and a knock pin through hole.
5. A method of preventing corrosion according to any one of claims 1 to 4, characterised in that the reactive radicals are fluorine and/or oxygen radicals.
6. The method of preventing corrosion according to claim 5, wherein the active radicals are derived from radicals generated in a chamber cleaning step of a plasma processing apparatus.
7. A method of cleaning a chamber of a plasma processing apparatus, wherein an electrostatic chuck in the chamber is treated by the corrosion prevention method according to any one of claims 1 to 6 during cleaning.
8. The chamber cleaning method of claim 7, wherein the cleaning process is cleaning the chamber using a plasma of a fluorine and/or oxygen containing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811223895.XA CN111081517B (en) | 2018-10-19 | 2018-10-19 | Anti-corrosion method of electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811223895.XA CN111081517B (en) | 2018-10-19 | 2018-10-19 | Anti-corrosion method of electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111081517A true CN111081517A (en) | 2020-04-28 |
| CN111081517B CN111081517B (en) | 2023-03-03 |
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| CN201811223895.XA Active CN111081517B (en) | 2018-10-19 | 2018-10-19 | Anti-corrosion method of electrostatic chuck |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
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| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
| CN117219561B (en) * | 2023-11-09 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
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| Publication number | Publication date |
|---|---|
| CN111081517B (en) | 2023-03-03 |
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