TW201540867A - Cap device and process apparatus - Google Patents
Cap device and process apparatus Download PDFInfo
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- TW201540867A TW201540867A TW103145769A TW103145769A TW201540867A TW 201540867 A TW201540867 A TW 201540867A TW 103145769 A TW103145769 A TW 103145769A TW 103145769 A TW103145769 A TW 103145769A TW 201540867 A TW201540867 A TW 201540867A
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- upper cover
- cooling portion
- spray cooling
- water spray
- baffle
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- 238000000034 method Methods 0.000 title claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 115
- 239000007921 spray Substances 0.000 claims abstract description 113
- 238000001816 cooling Methods 0.000 claims abstract description 107
- 239000010453 quartz Substances 0.000 claims abstract description 93
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 230000033001 locomotion Effects 0.000 claims description 13
- 238000013461 design Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 19
- 230000006698 induction Effects 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000001174 ascending effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
Abstract
Description
本發明涉及半導體加工技術領域，特別是涉及一種能應用於製程裝置上的頂蓋裝置，以及含有上述頂蓋裝置的製程裝置。The present invention relates to the field of semiconductor processing technology, and more particularly to a top cover device that can be applied to a process device, and a process device including the above-described top cover device.
CVD（Chemical Vapor Deposition，化學氣相澱積）方法是一種利用不同氣體在高溫下的相互反應來製備外延薄膜層的方法。對於CVD裝置來說，反應溫度一般都較高，比如GaN薄膜的生長溫度為1200℃，Si單晶薄膜的生長溫度為1100℃。通常高溫加熱採用的方式有加熱絲加熱、燈管加熱和感應加熱，在1000度以上的CVD裝置中採用感應加熱的較多。由於溫度較高，石英在高溫下具有較好的穩定性和耐驟冷驟熱的特點，因此CVD技術普遍使用的是石英腔，但是同時石英又具有容易被損壞的特點。The CVD (Chemical Vapor Deposition) method is a method of preparing an epitaxial film layer by utilizing mutual reaction of different gases at a high temperature. For the CVD apparatus, the reaction temperature is generally high, for example, the growth temperature of the GaN thin film is 1200 ° C, and the growth temperature of the Si single crystal thin film is 1100 ° C. Generally, high-temperature heating is performed by heating wire heating, lamp heating, and induction heating, and induction heating is used in a CVD apparatus of 1000 degrees or more. Due to the high temperature, quartz has good stability and resistance to quenching and rapid heat at high temperatures. Therefore, the CVD technology generally uses a quartz cavity, but at the same time, the quartz is easily damaged.
目前的結構中，石英腔放置在基座上，下部是感應加熱線圈，感應加熱線圈泡在塑膠腔的水槽中，確保加熱時感應加熱線圈的冷卻。石英腔的內部擱有石墨盤，感應加熱線圈通過電磁感應對石墨盤進行加熱，由於反應溫度較高，因此石英腔的上部有水冷區域，通過上蓋的噴水來降低石英腔的外壁的溫度。噴水冷卻機構是通過螺絲固定在上蓋上的。在實際應用中，由於上蓋是通過電機控制升降的，當下限位感測器檢測到上蓋觸及下限位時，電機停止運動。In the current structure, the quartz chamber is placed on the pedestal, and the lower part is an induction heating coil. The induction heating coil is immersed in the water tank of the plastic chamber to ensure the cooling of the induction heating coil during heating. The inside of the quartz chamber is filled with a graphite disk, and the induction heating coil heats the graphite disk by electromagnetic induction. Since the reaction temperature is high, the upper portion of the quartz chamber has a water-cooled region, and the temperature of the outer wall of the quartz chamber is lowered by the water spray on the upper cover. The water spray cooling mechanism is fixed to the upper cover by screws. In practical applications, since the upper cover is lifted by the motor control, when the lower limit sensor detects that the upper cover touches the lower limit position, the motor stops moving.
但是當下限位元感測器存在故障時，即便上蓋觸及下限位，下限位感測器也無法正常工作，即，不能發出能令電機停止運動的指令，這樣，固定在上蓋上的噴水冷卻機構就可能在隨著上蓋連續下降過程中觸及石英腔的外壁而損壞石英腔。However, when there is a fault in the lower limit sensor, even if the upper cover touches the lower limit, the lower limit sensor cannot work normally, that is, the command that stops the motor can not be issued, so that the water spray cooling mechanism fixed on the upper cover It is possible to damage the quartz chamber as it touches the outer wall of the quartz chamber as the upper cover continuously descends.
鑒於上述缺陷，本發明人經過長時間的研究和實踐終於獲得了本發明創造。In view of the above drawbacks, the inventors finally obtained the inventive creation after a long period of research and practice.
基於此，有必要針對噴水冷卻區易碰觸石英腔的外壁導致石英腔損壞等問題，提供一種頂蓋裝置以及含有上述頂蓋裝置的製程裝置。上述目的通過下述技術方案實現： 一種頂蓋裝置，包括噴水冷卻部和上蓋，該噴水冷卻部和該上蓋二者為彼此分立的結構，且該噴水冷卻部能隨該上蓋一起在豎直方向上運動。Based on this, it is necessary to provide a top cover device and a process device including the above-mentioned top cover device, in view of the problem that the spray water cooling zone is easy to touch the outer wall of the quartz cavity and cause damage to the quartz cavity. The above object is achieved by the following technical solution: a capping device comprising a water spray cooling portion and an upper cover, the water spray cooling portion and the upper cover being separate structures, and the water spray cooling portion can be vertically along with the upper cover On the movement.
上述目的還可以通過下述技術方案進一步實現。The above object can also be further achieved by the following technical solutions.
其中，該噴水冷卻部包括進水管、噴頭和擋板，該噴頭為花灑結構，該進水管連通到該噴頭的內腔，該進水管固定在該擋板上，該擋板位於該噴頭的上方。Wherein, the water spray cooling portion comprises an inlet pipe, a spray head and a baffle, the sprinkler is a shower structure, the inlet pipe is connected to the inner cavity of the nozzle, the inlet pipe is fixed on the baffle, and the baffle is located at the nozzle Above.
其中，該上蓋設置有通道，該擋板在該上蓋的上表面的正投影完全覆蓋該通道在該上蓋的上表面的正投影，該通道在該上蓋的上表面的正投影完全覆蓋該噴頭在該上蓋的上表面的正投影，且該通道的最小直徑大於該噴頭的最大直徑，且該通道的最大直徑小於該擋板的最大直徑；該上蓋設置在該擋板的下方，該擋板能支撐在該上蓋的上表面，以使該擋板、進水管和噴頭能隨該上蓋一起在豎直方向上運動。Wherein the upper cover is provided with a channel, and the orthographic projection of the baffle on the upper surface of the upper cover completely covers the orthographic projection of the channel on the upper surface of the upper cover, and the orthographic projection of the channel on the upper surface of the upper cover completely covers the nozzle An orthographic projection of the upper surface of the upper cover, and a minimum diameter of the passage is larger than a maximum diameter of the spray head, and a maximum diameter of the passage is smaller than a maximum diameter of the baffle; the upper cover is disposed below the baffle, and the baffle can Supported on the upper surface of the upper cover so that the baffle, the inlet pipe and the spray head can move in the vertical direction together with the upper cover.
其中，該噴水冷卻部還包括設置在該噴頭的出水端面上的支柱。Wherein, the water spray cooling portion further comprises a pillar disposed on the water outlet end surface of the nozzle.
其中，該支柱的數量為多個，該噴頭的出水端面上設置有用於安裝該多個支柱的多個安裝孔，該多個支柱可活動地安裝在多個安裝孔內。Wherein, the number of the pillars is plural, and the water outlet end surface of the nozzle is provided with a plurality of mounting holes for mounting the plurality of pillars, and the plurality of pillars are movably mounted in the plurality of mounting holes.
其中，該支柱的數量為多個，該多個支柱固定地安裝在該噴頭上。或者該支柱的數量為多個，該噴頭的出水端面上設置有用於安裝該多個支柱的多個安裝孔，該多個支柱固定地安裝在多個安裝孔內。Wherein, the number of the pillars is plural, and the plurality of pillars are fixedly mounted on the nozzle. Or the number of the pillars is plural, and the water outlet end surface of the nozzle is provided with a plurality of mounting holes for mounting the plurality of pillars, and the plurality of pillars are fixedly installed in the plurality of mounting holes.
作為另一個技術方面，本發明還提供一種製程裝置，包括石英腔、驅動機構和上述任一方案所述的頂蓋裝置，該頂蓋裝置安裝在該石英腔的上方。該驅動機構連接該頂蓋裝置中的上蓋，用於驅動該上蓋在豎直方向上運動；並且該上蓋在豎直方向上的運動距離大於等於該噴水冷卻部在豎直方向上所能運動的距離。As another technical aspect, the present invention also provides a process apparatus comprising a quartz chamber, a driving mechanism, and a capping device according to any of the above aspects, the capping device being mounted above the quartz chamber. The driving mechanism is connected to the upper cover of the top cover device for driving the upper cover to move in a vertical direction; and the moving distance of the upper cover in the vertical direction is greater than or equal to the vertical movement of the water spray cooling portion distance.
其中，該上蓋在豎直方向上的運動距離包括第一行程，在該第一行程的終點，該頂蓋裝置中的噴水冷卻部到達噴水冷卻部止動位置且支撐在該石英腔的外壁上；並且在該第一行程中的除了終點之外的各個時點，該噴水冷卻部支撐在該上蓋上，且二者的運動狀態一致；其中該第一行程指的是該噴水冷卻部在豎直方向上所能運動的距離。Wherein, the moving distance of the upper cover in the vertical direction comprises a first stroke, and at the end of the first stroke, the water spray cooling portion in the top cover device reaches the spray cooling portion stop position and is supported on the outer wall of the quartz chamber And at each time point except the end point in the first stroke, the water spray cooling portion is supported on the upper cover, and the motion states of the two are identical; wherein the first stroke refers to the water spray cooling portion being vertical The distance that can be moved in the direction.
其中，該上蓋在豎直方向上的運動距離還包括第二行程，在該第二行程中，該噴水冷卻部與該上蓋在豎直方向上相互分離；並且在該第二行程中的終點，該上蓋到達上蓋下限位置；在該第二行程中的除了終點之外的各個時點，該噴水冷卻部處於靜止狀態，該上蓋處於運動狀態；其中該第二行程指的是該噴水冷卻部止動位置與上蓋下限位置之間的距離。Wherein, the moving distance of the upper cover in the vertical direction further includes a second stroke, in which the water spray cooling portion and the upper cover are separated from each other in a vertical direction; and at the end point in the second stroke, The upper cover reaches a lower limit position of the upper cover; at each time point except the end point in the second stroke, the water spray cooling portion is in a stationary state, and the upper cover is in a moving state; wherein the second stroke refers to the water spray cooling portion stop The distance between the position and the lower limit of the upper cover.
其中，該驅動機構包括電機。Wherein, the driving mechanism comprises a motor.
其中，本發明提供的製程裝置還包括：上限位置感測器，用於檢測上蓋是否到達上限位置，並在其檢測到該上蓋到達上限位置時，輸出能令電機停止運轉的信號；和/或下限位置感測器，用於檢測上蓋是否到達上限位置，並在其檢測到該上蓋到達上限位置時，輸出能令電機停止運轉的信號。The process device of the present invention further includes: an upper limit position sensor for detecting whether the upper cover reaches the upper limit position, and outputting a signal capable of stopping the motor when the upper cover reaches the upper limit position; and/or The lower limit position sensor is configured to detect whether the upper cover reaches the upper limit position, and when it detects that the upper cover reaches the upper limit position, outputs a signal that can stop the motor from running.
本發明的有益效果是： 在本發明提供的頂蓋裝置及製程裝置中，上蓋和噴水冷卻部採用彼此分立的方式，在上蓋的第一行程中，上蓋的上表面與噴水冷卻部的擋板的下表面接觸，由上蓋支撐噴水冷卻部並帶動其在豎直方向上運動；在上蓋的第二行程中，噴水冷卻部的噴頭支撐在石英腔的外壁的上表面，且上蓋的上表面與噴水冷卻部的擋板的下表面相分離，此時噴水冷卻部保持靜止狀態而不隨上蓋在豎直方向上的運動而運動。這樣，當噴水冷卻部的噴頭已與石英腔的外壁的上表面相接觸（當噴頭設置有支柱時，則是支柱與石英腔的外壁的上表面相接觸），但上蓋尚未到達下限位置而在電機的帶動下繼續下降時，或者上蓋已到達下限位置但因下限位元感測器的故障而使電機繼續轉動並帶動上蓋繼續下降時，由於上蓋的上表面與噴水冷卻部的擋板的下表面已彼此分離，噴水冷卻部由石英腔的外壁的上表面支撐而非由上蓋的上表面支撐，因此噴水冷卻部並不產生繼續下降的動力，從而不會對石英窗產生大於噴水冷卻部自重的壓力，因而石英窗不會因受力較大而損壞，從而提高了與之配合的石英窗的使用壽命。此外，本發明提供的頂蓋裝置及製程裝置還具有結構簡單、設計合理等優點。The utility model has the beneficial effects that: in the top cover device and the process device provided by the invention, the upper cover and the water spray cooling portion are arranged in a separate manner, in the first stroke of the upper cover, the upper surface of the upper cover and the baffle of the water spray cooling portion The lower surface contact, the spray cooling portion is supported by the upper cover and drives to move in the vertical direction; in the second stroke of the upper cover, the spray head of the spray cooling portion is supported on the upper surface of the outer wall of the quartz chamber, and the upper surface of the upper cover is The lower surface of the baffle of the water spray cooling portion is separated, and at this time, the water spray cooling portion is kept in a stationary state without moving with the movement of the upper cover in the vertical direction. Thus, when the nozzle of the water spray cooling portion has contacted the upper surface of the outer wall of the quartz chamber (when the nozzle is provided with the pillar, the pillar is in contact with the upper surface of the outer wall of the quartz chamber), but the upper cover has not yet reached the lower limit position. When the motor continues to descend, or the upper cover has reached the lower limit position, but the motor continues to rotate due to the failure of the lower limit sensor and the upper cover continues to descend, due to the upper surface of the upper cover and the lower surface of the spray cooling unit The surfaces are separated from each other, and the water spray cooling portion is supported by the upper surface of the outer wall of the quartz chamber instead of being supported by the upper surface of the upper cover, so that the water spray cooling portion does not generate the power to continue to descend, so that the quartz window does not have a larger weight than the water spray cooling portion. The pressure of the quartz window is not damaged by the large force, which increases the service life of the quartz window. In addition, the top cover device and the process device provided by the invention have the advantages of simple structure, reasonable design and the like.
為了使本發明的目的、技術方案及優點更加清楚明白，以下通過實施例，並結合附圖，對本發明的頂蓋裝置及製程裝置進行進一步詳細說明。應當理解，此處所描述的具體實施例僅用以解釋本發明，並不用於限定本發明。In order to make the objects, technical solutions and advantages of the present invention more comprehensible, the cap device and the process device of the present invention will be further described in detail below with reference to the accompanying drawings. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
在本發明的描述中，需要理解的是，術語“上”、“下”、“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係，僅是為了便於描述本發明和簡化描述，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作，因此不能理解為對本發明的限制。In the description of the present invention, it is to be understood that the orientation or positional relationship of the terms "upper", "lower", "inside", "outside" and the like is based on the orientation or positional relationship shown in the drawings, only for the purpose of The invention is not limited by the scope of the invention, and is not intended to be a limitation of the invention.
如第1圖所示，本發明的頂蓋裝置100使用在CVD裝置的製程裝置中，頂蓋裝置100對石英腔400進行冷卻。製程裝置包括頂蓋裝置100、塑膠腔200、基座210、水槽220、感應加熱線圈300、石英腔400、石墨盤410和電機（未示出）。As shown in Fig. 1, the top cover device 100 of the present invention is used in a process device of a CVD device, and the top cover device 100 cools the quartz chamber 400. The process apparatus includes a top cover device 100, a plastic chamber 200, a susceptor 210, a water tank 220, an induction heating coil 300, a quartz chamber 400, a graphite disk 410, and a motor (not shown).
頂蓋裝置100位於塑膠腔200的上方，基座210置於塑膠腔200內，基座210的上面放置有石英腔400，基座210的下方設置有感應加熱線圈300，感應加熱線圈300泡在塑膠腔200內的水槽220中，確保加熱時感應加熱線圈300的冷卻。The top cover device 100 is located above the plastic chamber 200. The base 210 is placed in the plastic chamber 200. The quartz chamber 400 is placed on the base 210. The induction heating coil 300 is disposed under the base 210. The induction heating coil 300 is immersed in the In the water tank 220 in the plastic chamber 200, cooling of the induction heating coil 300 during heating is ensured.
石英腔400的內部放置有石墨盤410，感應加熱線圈300通過電磁感應對石墨盤410進行加熱，由於石墨盤410溫度較高，導致石英腔400的溫度升高，因此本發明實施例提供的頂蓋裝置100設置有用於對石英腔400進行冷卻的冷卻機構，以降低石英腔400的溫度。The inside of the quartz chamber 400 is placed with a graphite disk 410. The induction heating coil 300 heats the graphite disk 410 by electromagnetic induction. Since the temperature of the graphite disk 410 is high, the temperature of the quartz cavity 400 is increased. The capping device 100 is provided with a cooling mechanism for cooling the quartz chamber 400 to lower the temperature of the quartz chamber 400.
本發明實施例提供的頂蓋裝置100，包括噴水冷卻部110和上蓋120，噴水冷卻部110和上蓋120為彼此分立的結構，即，二者不是一體成型或者固定連接在一起的，且噴水冷卻部110能隨上蓋120一起在豎直方向上上下運動。The top cover device 100 according to the embodiment of the present invention includes a water spray cooling portion 110 and an upper cover 120. The water spray cooling portion 110 and the upper cover 120 are separated from each other, that is, the two are not integrally formed or fixedly connected, and the water spray is cooled. The portion 110 can move up and down in the vertical direction along with the upper cover 120.
本發明實施例提供的頂蓋裝置100通過採用上蓋120和噴水冷卻部110彼此分立的結構，保證噴水冷卻部110在到達噴水冷卻部止動位置後，不再受到繼續下降的驅動力，而是保持靜止狀態。其中，噴水冷卻部止動位置為石英腔400的外壁的上表面。例如，頂蓋裝置100在下降過程中，噴水冷卻部110一旦下降到石英腔400的外壁的上表面，則會停止繼續下降並支撐在石英腔400的外壁的上表面。這樣，噴水冷卻部110不再由頂蓋裝置100支撐而是由石英腔400的外壁的上表面支撐，此時，若上蓋120尚未到達其下限位置，則下限位感測器不會發出能令電機停止運轉的信號，上蓋120將繼續下降；或者，若上蓋120已到達其下限位置，但是未設置下限位感測器或下限位元感測器存在故障而無法發出能令電機停止運轉的信號，則上蓋120將存在繼續下降的驅動力。這種情況下，由於上蓋120和噴水冷卻部110為彼此分立的結構，因而上蓋120繼續下降或承受繼續下降的驅動力，並且由於上蓋120和噴水冷卻部110已不再相互接觸，因此不會帶動噴水冷卻部110繼續下降或者將下降驅動力傳遞至噴水冷卻部110，這樣，石英腔400將不會承受由噴水冷卻部110繼續下降或傳遞驅動力而導致的衝擊力，從而保證石英腔400不易損壞。The top cover device 100 provided by the embodiment of the present invention ensures that the water spray cooling portion 110 is no longer subjected to the driving force that continues to descend after reaching the stop position of the water spray cooling portion by adopting a structure in which the upper cover 120 and the water spray cooling portion 110 are separated from each other. Keep it still. The stop position of the water spray cooling portion is the upper surface of the outer wall of the quartz chamber 400. For example, during the lowering process of the top cover device 100, once the water spray cooling portion 110 is lowered to the upper surface of the outer wall of the quartz chamber 400, the lowering of the outer wall of the quartz chamber 400 is stopped and supported. Thus, the water spray cooling portion 110 is no longer supported by the top cover device 100 but supported by the upper surface of the outer wall of the quartz chamber 400. At this time, if the upper cover 120 has not reached the lower limit position, the lower limit sensor will not issue an order. When the motor stops running, the upper cover 120 will continue to descend; or, if the upper cover 120 has reached its lower limit position, but the lower limit sensor or the lower limit position sensor is not set to be faulty, a signal that stops the motor cannot be issued. Then, the upper cover 120 will have a driving force that continues to descend. In this case, since the upper cover 120 and the water spray cooling portion 110 are separate structures, the upper cover 120 continues to descend or bear the driving force that continues to descend, and since the upper cover 120 and the water spray cooling portion 110 are no longer in contact with each other, The spray water cooling unit 110 continues to descend or transmits the descending driving force to the water spray cooling unit 110. Thus, the quartz chamber 400 will not withstand the impact force caused by the water jet cooling portion 110 continuing to descend or transmit the driving force, thereby ensuring the quartz chamber 400. Not easy to damage.
作為一種可實施方式，噴水冷卻部110包括噴頭111、進水管112、擋板113和支柱114。噴頭111為花灑結構且內部為空腔結構，進水管112經由噴頭111的上端面而與噴頭111的內部空腔（以下簡稱為內腔）連通，噴頭111的下端面為出水端面，去離子水通過進水管112流入噴頭111的內腔，並經由出水端面噴灑到石英腔400的外壁，以對其進行冷卻。支柱114安裝在噴頭111的出水端面，並且在噴頭111的出水端面上設置有與支柱114數量相對應的安裝孔，支柱114安裝在安裝孔內，用於對噴頭111起支撐作用。進一步地，支柱114應凸出於噴頭111的出水端面，即，支柱114應自噴頭111的出水端面向下延伸，以保證噴頭111在下降時能支撐在石英腔400的外壁。並且，噴頭111上的安裝孔可以為通孔，也可以為盲孔。As an embodiment, the water spray cooling portion 110 includes a spray head 111, an inlet pipe 112, a baffle 113, and a strut 114. The nozzle 111 is a shower structure and has a cavity structure inside. The inlet pipe 112 communicates with the internal cavity of the shower head 111 (hereinafter simply referred to as an inner cavity) via the upper end surface of the shower head 111, and the lower end surface of the shower head 111 is an outlet end face, deionized. The water flows into the inner cavity of the head 111 through the inlet pipe 112, and is sprayed to the outer wall of the quartz chamber 400 through the outlet end face to be cooled. The struts 114 are mounted on the water discharge end surface of the shower head 111, and a mounting hole corresponding to the number of the struts 114 is provided on the water discharge end surface of the shower head 111, and the struts 114 are installed in the mounting holes for supporting the shower head 111. Further, the struts 114 should protrude from the water discharge end surface of the shower head 111, that is, the struts 114 should extend downward from the water discharge end surface of the shower head 111 to ensure that the shower head 111 can be supported on the outer wall of the quartz chamber 400 when descending. Moreover, the mounting hole on the shower head 111 may be a through hole or a blind hole.
進水管112與噴頭111固定連接，且應保證進水管112與噴頭111之間的密封性，當去離子水通過進水管112流入噴頭111的內腔時，進水管112與噴頭111的連接處不會漏水。The inlet pipe 112 is fixedly connected to the nozzle 111, and the sealing between the inlet pipe 112 and the nozzle 111 should be ensured. When the deionized water flows into the cavity of the nozzle 111 through the inlet pipe 112, the connection between the inlet pipe 112 and the nozzle 111 is not Will leak.
擋板113位於噴頭111和上蓋120的上方且固定在進水管112上，使得擋板113與噴頭111能夠同步運動。當支柱114未觸及石英腔400的外壁的上表面時，上蓋120的上表面觸及擋板113的下表面，以帶動擋板113和噴頭111一同上升或者下降。也就是說，當支柱114未觸及石英腔400的外壁的上表面時，噴水冷卻部110由上蓋120支撐；當支柱114觸及石英腔400的外壁的上表面時，噴水冷卻部110由石英腔400的外壁支撐。The baffle 113 is located above the head 111 and the upper cover 120 and is fixed to the inlet pipe 112 such that the baffle 113 and the head 111 can move in synchronization. When the pillar 114 does not touch the upper surface of the outer wall of the quartz chamber 400, the upper surface of the upper cover 120 touches the lower surface of the shutter 113 to drive the shutter 113 and the nozzle 111 to rise or fall together. That is, when the pillar 114 does not touch the upper surface of the outer wall of the quartz chamber 400, the water spray cooling portion 110 is supported by the upper cover 120; when the pillar 114 touches the upper surface of the outer wall of the quartz chamber 400, the water spray cooling portion 110 is composed of the quartz chamber 400 The outer wall is supported.
頂蓋裝置100的升降是通過諸如電機的驅動機構來控制的，電機的運行與停止則依據限位元感測器的輸出信號，限位元感測器的輸出信號取決於上蓋120所處的位置。其中，限位感測器包括：用於檢測上蓋120是否到達上限位置的上限位感測器，以及用於檢測上蓋120是否到達下限位置的下限位感測器。例如，在頂蓋裝置100下降過程中，若下限位感測器檢測到上蓋120到達下限位置，則發出能令電機停止運動的信號，隨後電機停止運動，且上蓋120也相應地停止運動；反之，若下限位感測器未檢測到上蓋120到達下限位置，則不會發出能令電機停止運動的信號，於是上蓋120在電機的帶動下繼續做下降運動。又如，在頂蓋裝置100上升過程中，若上限位感測器檢測到上蓋120到達上限位置，則發出能令電機停止運動的信號，於是電機停止運動，且上蓋120也相應地停止運動；反之，若上限位感測器未檢測到上蓋120到達上限位置，則不會發出能令電機停止運動的信號，於是上蓋120在電機的帶動下繼續做上升運動。The lifting and lowering of the top cover device 100 is controlled by a driving mechanism such as a motor. The running and stopping of the motor is based on the output signal of the limiting element sensor, and the output signal of the limiting element sensor depends on the position of the upper cover 120. position. The limit sensor includes: an upper limit position sensor for detecting whether the upper cover 120 reaches the upper limit position, and a lower limit position sensor for detecting whether the upper cover 120 reaches the lower limit position. For example, during the falling process of the top cover device 100, if the lower limit sensor detects that the upper cover 120 reaches the lower limit position, a signal is issued to stop the motor from moving, and then the motor stops moving, and the upper cover 120 also stops moving accordingly; If the lower limit sensor does not detect that the upper cover 120 reaches the lower limit position, no signal is issued to stop the motor from moving, and the upper cover 120 continues to perform the descending motion under the driving of the motor. For example, during the rising process of the top cover device 100, if the upper limit position sensor detects that the upper cover 120 reaches the upper limit position, a signal is generated to stop the motor from moving, and then the motor stops moving, and the upper cover 120 also stops moving accordingly; On the other hand, if the upper limit sensor does not detect that the upper cover 120 reaches the upper limit position, a signal that stops the motor from moving will not be issued, and the upper cover 120 continues to perform the ascending motion under the driving of the motor.
進一步地，當上蓋120在電機的帶動下下降時，若頂蓋裝置100中的噴頭111上的支柱114支撐在石英腔400的外壁的上表面上，則擋板113停止下降，由於噴水冷卻部110和上蓋120為分立式結構，因此上蓋120將不受噴水冷卻部110的影響而繼續下降，此時噴水冷卻部110由石英腔400的外壁支撐而不再由上蓋120支撐。當上蓋120在電機的帶動下上升時，待上蓋120先上升並觸及擋板113後，將帶動擋板113一同上升，噴頭111上的支柱114將離開石英腔400的外壁的上表面，此時，噴水冷卻部110由上蓋120支撐而不再由石英腔400的外壁支撐。Further, when the upper cover 120 is lowered by the motor, if the support 114 on the shower head 111 in the top cover device 100 is supported on the upper surface of the outer wall of the quartz chamber 400, the shutter 113 stops falling due to the water spray cooling portion. The upper cover 120 and the upper cover 120 are of a discrete structure, so that the upper cover 120 will continue to be lowered without being affected by the water spray cooling portion 110. At this time, the water spray cooling portion 110 is supported by the outer wall of the quartz chamber 400 and is no longer supported by the upper cover 120. When the upper cover 120 is lifted by the motor, after the upper cover 120 first rises and touches the baffle 113, the baffle 113 is lifted together, and the strut 114 on the shower head 111 will leave the upper surface of the outer wall of the quartz chamber 400. The water spray cooling portion 110 is supported by the upper cover 120 and is no longer supported by the outer wall of the quartz chamber 400.
作為一種可實施方式，上蓋120設置有通道，噴頭111和上蓋120設置在擋板113下方。為使上蓋120能夠通過接觸擋板113而帶動擋板113以及噴頭111一同運動，需使噴頭111、擋板113和該通道三者在上蓋120上表面的正投影彼此重疊，具體地，擋板113在上蓋120的上表面的正投影完全覆蓋該通道在上蓋120的上表面的正投影，該通道在上蓋120的上表面的正投影完全覆蓋噴頭111在上蓋120的上表面的正投影，即，該通道的最小直徑大於噴頭111的最大直徑，且該通道的最大直徑小於擋板113的最大直徑。這樣，噴頭111則能夠自由穿過通道，而擋板113不能穿過通道，從而使擋板113能支撐在上蓋120的上表面，以帶動擋板113、固定在擋板113上的進水管112、固定在進水管112上的噴頭111能隨上蓋120一起上下運動。As an implementation manner, the upper cover 120 is provided with a passage, and the shower head 111 and the upper cover 120 are disposed under the baffle 113. In order to enable the upper cover 120 to move the baffle 113 and the head 111 together by contacting the baffle 113, the orthographic projections of the head 111, the baffle 113 and the channel on the upper surface of the upper cover 120 are overlapped with each other, specifically, the baffle The orthographic projection of the upper surface of the upper cover 120 completely covers the orthographic projection of the channel on the upper surface of the upper cover 120, the orthographic projection of the channel on the upper surface of the upper cover 120 completely covering the orthographic projection of the showerhead 111 on the upper surface of the upper cover 120, ie The minimum diameter of the passage is larger than the maximum diameter of the head 111, and the maximum diameter of the passage is smaller than the maximum diameter of the flap 113. In this way, the nozzle 111 can pass through the passage freely, and the baffle 113 cannot pass through the passage, so that the baffle 113 can be supported on the upper surface of the upper cover 120 to drive the baffle 113 and the inlet pipe 112 fixed to the baffle 113. The head 111 fixed to the inlet pipe 112 can move up and down together with the upper cover 120.
進一步地，本發明對通道、擋板113和上蓋120的形狀沒有限制，事實上，通道、擋板113和噴頭111的橫截面的形狀（即，在上蓋120上表面的正投影的形狀）可以為圓形、矩形或者其他形狀，並且優選地使噴頭111的橫截面的形狀與通道的橫截面的形狀相對應。事實上，只要能夠保證擋板113可以支撐在上蓋120上、噴頭111能夠自由穿越通道即可。Further, the present invention has no limitation on the shape of the channel, the baffle 113 and the upper cover 120. In fact, the shape of the cross section of the channel, the baffle 113 and the shower head 111 (ie, the shape of the orthographic projection on the upper surface of the upper cover 120) may be It is circular, rectangular or other shape, and preferably the shape of the cross section of the shower head 111 corresponds to the shape of the cross section of the passage. In fact, as long as it can be ensured that the baffle 113 can be supported on the upper cover 120, the nozzle 111 can freely pass through the passage.
如第2圖所示，本實施例中的通道為橫截面形狀為圓形的通孔，噴頭111、擋板113和上蓋120的橫截面也對應地為圓形，上蓋120上的通孔的直徑大於噴頭111的直徑，且小於擋板113的直徑。As shown in FIG. 2, the channel in this embodiment is a through hole having a circular cross-sectional shape, and the cross section of the shower head 111, the baffle 113, and the upper cover 120 is also correspondingly circular, and the through hole on the upper cover 120 is The diameter is larger than the diameter of the showerhead 111 and smaller than the diameter of the shutter 113.
上蓋120與噴水冷卻部110為分立式的結構，上蓋120安裝在擋板113的下方，擋板113與噴頭111上的支柱114的下端面之間設置有預設距離，該預設距離的大小需滿足下述條件：其一，在上蓋120到達下限位置時，支柱114的下端面與石英腔400的外壁的上表面相接觸且支撐於其上；其二，該預設距離為上蓋120在豎直方向上的厚度和其在豎直方向上的第二下降行程之和，其中，第二下降行程為自支柱114的下端面與石英腔400的外壁相接觸時起至上蓋120下降至下限位置為止的上蓋120的下降距離。需要說明的是，第二下降行程為大於等於零的數值，當其為零時，石英腔400的外壁的上表面與上蓋120的下限位置在同一水平線上；當其大於零時，石英腔400的外壁的上表面低於上蓋120的下限位置，即，當支柱114的下端面下降至石英腔400的外壁的上表面時，上蓋120還尚未下降至下限位置。進一步地，上蓋120的總下降行程（總上升行程）大於等於噴水冷卻部110的總下降行程（總上升行程）。The upper cover 120 and the water spray cooling unit 110 are of a discrete structure, the upper cover 120 is mounted below the baffle 113, and the preset distance is set between the baffle 113 and the lower end surface of the strut 114 on the shower head 111. The size is required to satisfy the following conditions: First, when the upper cover 120 reaches the lower limit position, the lower end surface of the pillar 114 is in contact with and supported on the upper surface of the outer wall of the quartz chamber 400; and second, the predetermined distance is the upper cover 120. a sum of a thickness in the vertical direction and a second downward stroke in the vertical direction, wherein the second descending stroke is from the time when the lower end surface of the strut 114 is in contact with the outer wall of the quartz chamber 400 until the upper cover 120 is lowered to The descending distance of the upper cover 120 up to the lower limit position. It should be noted that the second falling stroke is a value greater than or equal to zero. When it is zero, the upper surface of the outer wall of the quartz chamber 400 is on the same horizontal line as the lower limit position of the upper cover 120; when it is greater than zero, the quartz chamber 400 is The upper surface of the outer wall is lower than the lower limit position of the upper cover 120, that is, when the lower end surface of the pillar 114 is lowered to the upper surface of the outer wall of the quartz chamber 400, the upper cover 120 has not yet descended to the lower limit position. Further, the total descending stroke (total ascending stroke) of the upper cover 120 is greater than or equal to the total descending stroke (total ascending stroke) of the water spray cooling unit 110.
也就是說，上蓋120在豎直方向上的運動距離（上蓋120的總上升行程或總下降行程）包括第一行程，在第一行程的終點，噴水冷卻部110到達噴水冷卻部止動位置且支撐在石英腔400的外壁的上表面上；並且在第一行程中的除了終點之外的各個時點，噴水冷卻部110支撐在上蓋120上，且二者的運動狀態一致；其中，所謂第一行程指的是噴水冷卻部110在豎直方向上所能運動的距離。That is, the moving distance of the upper cover 120 in the vertical direction (the total rising stroke or the total falling stroke of the upper cover 120) includes a first stroke, and at the end of the first stroke, the water spray cooling portion 110 reaches the water spray cooling portion stopping position and Supported on the upper surface of the outer wall of the quartz chamber 400; and at each time point except the end point in the first stroke, the water spray cooling portion 110 is supported on the upper cover 120, and the motion states of the two are identical; wherein, the first The stroke refers to the distance that the water spray cooling portion 110 can move in the vertical direction.
進一步地，上蓋120在豎直方向上的運動距離還包括第二行程，在第二行程中，噴水冷卻部110與上蓋120在豎直方向上相互分離；並且在第二行程中的終點，上蓋120到達上蓋下限位置；並且在第二行程中的除了終點之外的各個時點，噴水冷卻部110處於靜止狀態，上蓋120處於運動狀態；其中第二行程指的是噴水冷卻部止動位置與上蓋下限位置之間的距離。如上所述，在實際應用中，上蓋120在豎直方向上的運動距離可以僅包括第一行程。Further, the moving distance of the upper cover 120 in the vertical direction further includes a second stroke in which the water spray cooling portion 110 and the upper cover 120 are separated from each other in the vertical direction; and at the end point in the second stroke, the upper cover 120 reaches the upper cover lower limit position; and at each time point except the end point in the second stroke, the water spray cooling portion 110 is in a stationary state, and the upper cover 120 is in a moving state; wherein the second stroke refers to the water spray cooling portion stop position and the upper cover The distance between the lower limit positions. As described above, in practical applications, the moving distance of the upper cover 120 in the vertical direction may include only the first stroke.
下面以第1圖所示的石英腔400的外壁的上表面低於上蓋120的下限位置的情形為例對頂蓋裝置100的工作過程進行說明。Next, the operation of the top cover device 100 will be described by taking the case where the upper surface of the outer wall of the quartz chamber 400 shown in Fig. 1 is lower than the lower limit position of the upper cover 120 as an example.
在上蓋120下降過程中，首先進入第一行程，噴水冷卻部110中的支柱114未接觸石英腔400的外壁的上表面，此時上蓋120的上表面與擋板113的下表面相接觸，噴水冷卻部110由上蓋120支撐並且隨著上蓋120一起下降。在第一行程的終點，噴水冷卻部110的支柱114與石英腔400的外壁的上表面相接觸，噴水冷卻部110由石英腔400的外壁的上表面支撐而不再由上蓋120支撐。而後進入第二行程，擋板113的下表面與上蓋120的上表面分開，上蓋120在沒有到達下限位置時仍然可以繼續下降，而噴水冷卻部110由於受到石英腔400的外壁的上表面的支撐而不再繼續下降。在第二行程的終點，上蓋120由於到達下限位置而停止運動。During the lowering of the upper cover 120, the first stroke is first entered, and the strut 114 in the water spray cooling portion 110 does not contact the upper surface of the outer wall of the quartz chamber 400. At this time, the upper surface of the upper cover 120 is in contact with the lower surface of the baffle 113, and water is sprayed. The cooling portion 110 is supported by the upper cover 120 and descends along with the upper cover 120. At the end of the first stroke, the strut 114 of the water spray cooling portion 110 is in contact with the upper surface of the outer wall of the quartz chamber 400, and the water spray cooling portion 110 is supported by the upper surface of the outer wall of the quartz chamber 400 and is no longer supported by the upper cover 120. Then, entering the second stroke, the lower surface of the baffle 113 is separated from the upper surface of the upper cover 120, and the upper cover 120 can continue to descend without reaching the lower limit position, and the water spray cooling portion 110 is supported by the upper surface of the outer wall of the quartz chamber 400. And no longer continue to decline. At the end of the second stroke, the upper cover 120 stops moving due to reaching the lower limit position.
在上蓋120上升過程中，首先進入第二行程，上蓋120的上表面與擋板113的下表面二者彼此分離，噴水冷卻部110由石英腔400的外壁的上表面支撐，上蓋120在驅動機構的帶動下而上升，而噴水冷卻部110則保持靜止狀態。當上蓋120上升至其上表面與擋板113的下表面相接觸後進入到第一行程，在第一行程中，噴水冷卻部110由上蓋120支撐而不再由石英腔400的外壁的上表面支撐，於是上蓋120和噴水冷卻部110的運動狀態相同，即，上蓋120繼續上升，並將帶動擋板113和噴頭111一起上升。During the ascent of the upper cover 120, first entering the second stroke, the upper surface of the upper cover 120 and the lower surface of the baffle 113 are separated from each other, the water spray cooling portion 110 is supported by the upper surface of the outer wall of the quartz chamber 400, and the upper cover 120 is at the driving mechanism. The drive is raised and the spray cooling unit 110 is kept stationary. When the upper cover 120 is raised until its upper surface comes into contact with the lower surface of the baffle 113, it enters the first stroke. In the first stroke, the water spray cooling portion 110 is supported by the upper cover 120 and is no longer occupied by the upper surface of the outer wall of the quartz chamber 400. Supporting, the upper cover 120 and the water spray cooling unit 110 are in the same state of motion, that is, the upper cover 120 continues to rise, and the driven shutter 113 and the head 111 are raised together.
採用上述的上蓋120和噴水冷卻部110二者分立式的結構，在上蓋120的第二行程中，噴頭111與上蓋120的運動狀態不同步，這樣，在下降過程中，當噴頭111的支柱114的下端面與石英腔400的外壁相接觸並由其支撐時，即使上蓋120繼續下降，也不會帶動噴水冷卻部110繼續下降，因此，石英腔400的外壁將不會承受由噴水冷卻部110繼續下降而導致的衝擊力，從而保證石英腔400不易損壞。With the above-mentioned separate structure of the upper cover 120 and the water spray cooling unit 110, in the second stroke of the upper cover 120, the movement state of the shower head 111 and the upper cover 120 are not synchronized, so that during the lowering process, the support of the shower head 111 When the lower end surface of the 114 is in contact with and supported by the outer wall of the quartz chamber 400, even if the upper cover 120 continues to descend, the water spray cooling portion 110 does not continue to be lowered. Therefore, the outer wall of the quartz chamber 400 will not be subjected to the water spray cooling portion. The impact force caused by the continued decline of 110 ensures that the quartz chamber 400 is not easily damaged.
在本實施例中，在噴頭111的出水端面的邊緣位置至少設置兩個的支柱114，以起到較好的支撐作用。並且，兩個以上的支柱114均勻地分佈在噴頭111的出水端面上，以此保證石英腔400的外壁在與噴頭111的支柱114接觸時受力均勻。可以理解，該兩個以上的支柱114也可以根據實際需要設置在噴頭111的出水端面的其他位置，並且，使這些支柱114可活動地安裝在噴頭111上。進一步地，可以將支柱114的高度（即，支柱114延伸出噴頭111的出水端面的長度）設置為可調節的形式，通過調節支柱114的高度來相應地調節噴頭111與石英腔400的外壁之間的距離，從而滿足不同的冷卻需求。In the present embodiment, at least two pillars 114 are provided at the edge position of the water discharge end surface of the shower head 111 to provide a better supporting function. Further, two or more struts 114 are evenly distributed on the water discharge end surface of the head 111, thereby ensuring that the outer wall of the quartz chamber 400 is uniformly biased when it comes into contact with the struts 114 of the head 111. It can be understood that the two or more pillars 114 can also be disposed at other positions of the water discharge end surface of the head 111 according to actual needs, and the pillars 114 can be movably mounted on the nozzle 111. Further, the height of the pillars 114 (i.e., the length of the pillars 114 extending from the outlet end surface of the showerhead 111) may be set to an adjustable form, and the heights of the pillars 114 are adjusted to adjust the outer walls of the showerhead 111 and the quartz chamber 400 accordingly. The distance between them to meet different cooling needs.
進一步地，為了保證支柱114支撐得穩定與準確，支柱114在噴頭111出水端面上的安裝孔的內徑應與支柱114的外徑相匹配。支柱114與安裝孔配合後，通過支柱114在安裝孔內的軸向運動來調節支柱114的高度。Further, in order to ensure the support and stability of the support 114, the inner diameter of the mounting hole of the support 114 on the water discharge end surface of the spray head 111 should match the outer diameter of the support 114. After the struts 114 are mated with the mounting holes, the height of the struts 114 is adjusted by axial movement of the struts 114 within the mounting holes.
為了保證支柱114能夠起到支撐作用，無論噴頭111上的安裝孔為通孔還是盲孔，只要支柱114能凸出於噴頭111的出水端面即可，從而保證噴頭111與石英腔400的外壁之間存在距離。這樣，當噴水冷卻部110下降至石英腔400的外壁的上表面時，由支柱114支撐在石英腔400的外壁上，從而保證噴頭111不會觸及石英腔400的外壁，以進一步減少石英腔400的損壞。In order to ensure that the pillars 114 can support, whether the mounting holes on the nozzles 111 are through holes or blind holes, as long as the pillars 114 can protrude from the water outlet end surface of the nozzles 111, thereby ensuring the outer walls of the nozzles 111 and the quartz chambers 400. There is a distance between them. Thus, when the water spray cooling portion 110 is lowered to the upper surface of the outer wall of the quartz chamber 400, it is supported by the support 114 on the outer wall of the quartz chamber 400, thereby ensuring that the shower head 111 does not touch the outer wall of the quartz chamber 400, thereby further reducing the quartz chamber 400. Damage.
作為一種可實施方式，支柱114在噴頭111上的安裝孔可以為螺紋孔，支柱114對應地為帶有外螺紋結構的圓柱。螺紋孔與帶有外螺紋結構的圓柱相配合，便於調節噴頭111與石英腔400的外壁之間的距離，保證頂蓋裝置100的冷卻效果。在本實施例中，支柱114為螺柱，螺柱通過螺紋連接而安裝在噴頭111上的螺紋孔內，對噴頭111起支撐作用並保證噴頭111與石英腔400的外壁之間存在距離。As an embodiment, the mounting hole of the strut 114 on the showerhead 111 may be a threaded hole, and the strut 114 is correspondingly a cylinder with an externally threaded structure. The threaded hole cooperates with the cylinder with the externally threaded structure to facilitate the adjustment of the distance between the spray head 111 and the outer wall of the quartz chamber 400, and to ensure the cooling effect of the top cover device 100. In the present embodiment, the strut 114 is a stud which is screwed into the threaded hole in the head 111 to support the head 111 and to ensure a distance between the head 111 and the outer wall of the quartz chamber 400.
作為一種可實施方式，支柱114有多個，多個支柱114固定安裝在噴頭111上，即，支柱114與噴頭111為一體結構，這樣，噴頭111與石英腔400的外壁之間的距離固定，只要支柱114的高度能夠滿足製程要求的頂蓋裝置100的冷卻效果即可。這種方式雖然靈活性受限，但是方便操作。As an implementation manner, there are a plurality of pillars 114, and a plurality of pillars 114 are fixedly mounted on the nozzle 111, that is, the pillars 114 are integrally formed with the nozzles 111, so that the distance between the nozzles 111 and the outer wall of the quartz chamber 400 is fixed. As long as the height of the pillars 114 can satisfy the cooling effect of the top cover device 100 required for the process. Although this method is limited in flexibility, it is easy to operate.
本發明的頂蓋裝置100的操作過程如下： 當上蓋120下降時，擋板113的下表面與上蓋120的上表面相接觸，擋板113和噴頭111隨著上蓋120一起下降。The operation of the canopy device 100 of the present invention is as follows: When the upper cover 120 is lowered, the lower surface of the shutter 113 is in contact with the upper surface of the upper cover 120, and the shutter 113 and the head 111 are lowered together with the upper cover 120.
當噴頭111上的支柱114下降到觸及石英腔400的外壁的上表面時，石英腔400的外壁的上表面支撐噴頭111及與之連接的進水管112和擋板113，於是噴水冷卻部110停止下降。此時，若上蓋120未到達下限位置，下限位感測器不會發出能令電機停止轉動的信號，電機將繼續轉動並帶動上蓋120繼續下降，於是上蓋120的上表面與擋板113的下表面相分離。When the post 114 on the head 111 descends to the upper surface of the outer wall of the quartz chamber 400, the upper surface of the outer wall of the quartz chamber 400 supports the head 111 and the inlet pipe 112 and the baffle 113 connected thereto, so that the water spray cooling portion 110 stops. decline. At this time, if the upper cover 120 does not reach the lower limit position, the lower limit sensor does not emit a signal that can stop the motor from rotating, the motor will continue to rotate and drive the upper cover 120 to continue to descend, so that the upper surface of the upper cover 120 and the lower surface of the baffle 113 The surface is phase separated.
上蓋120繼續下降，且上蓋120的上表面與擋板113的下表面之間的距離繼續增大。當下限位感測器檢測到上蓋120到達下限位置時，下限位感測器發出能令電機停止轉動的信號，電機停止轉動，上蓋120於是也停止轉動。The upper cover 120 continues to descend, and the distance between the upper surface of the upper cover 120 and the lower surface of the shutter 113 continues to increase. When the lower limit sensor detects that the upper cover 120 reaches the lower limit position, the lower limit sensor sends a signal that stops the motor from rotating, the motor stops rotating, and the upper cover 120 then stops rotating.
當上蓋120自下限位置上升時，由於上蓋120的上表面與擋板113的下表面之間存在一定距離，即第二行程，因此上蓋120先上升，此時擋板113和噴頭111不隨上蓋120運動。When the upper cover 120 rises from the lower limit position, since the upper surface of the upper cover 120 and the lower surface of the baffle 113 have a certain distance, that is, the second stroke, the upper cover 120 rises first, and the baffle 113 and the shower head 111 do not follow the upper cover. 120 sports.
在上蓋120的上升過程中，當其上升了第二行程時，上蓋120的上表面與擋板113的下表面相接觸。之後，若上蓋120繼續上升，則將帶動擋板113和噴頭111一起上升，而使噴頭111上的支柱114離開石英腔400的外壁的上表面，伴隨著上升的繼續，而使支柱114與石英腔400的外壁的上表面之間的距離逐漸增大。During the ascent of the upper cover 120, when it is raised by the second stroke, the upper surface of the upper cover 120 is in contact with the lower surface of the shutter 113. Thereafter, if the upper cover 120 continues to rise, the baffle 113 and the shower head 111 are lifted together, and the strut 114 on the shower head 111 is separated from the upper surface of the outer wall of the quartz chamber 400, and the strut 114 and the quartz are accompanied by the continuation of the rise. The distance between the upper surfaces of the outer walls of the cavity 400 gradually increases.
之後，上蓋120繼續上升直至到達上限位置。上限位感測器檢測到上蓋120到達上限位置，發出能令電機停止轉動的信號，電機停止轉動，上蓋120也相應地停止運動。Thereafter, the upper cover 120 continues to rise until reaching the upper limit position. The upper limit sensor detects that the upper cover 120 reaches the upper limit position, sends a signal that stops the rotation of the motor, the motor stops rotating, and the upper cover 120 also stops moving accordingly.
去離子水通過進水管112流入噴頭111的內腔，從噴頭111的出水端面噴淋到石英腔400的外壁，以降低石英腔400的溫度。The deionized water flows into the inner cavity of the shower head 111 through the inlet pipe 112, and is sprayed from the outlet end surface of the shower head 111 to the outer wall of the quartz chamber 400 to lower the temperature of the quartz chamber 400.
作為另一個技術方面，本發明還提供一種製程裝置，其包括石英腔和頂蓋裝置，該頂蓋裝置安裝在該石英腔的上方，並且可以實現為本發明上述任意實施例提供的頂蓋裝置。該頂蓋裝置的結構、工作過程類似於前述實施例，在此不再贅述。As another technical aspect, the present invention also provides a process device including a quartz chamber and a cap device, the cap device being mounted above the quartz chamber, and implementing the cap device provided in any of the above embodiments of the present invention . The structure and working process of the cap device are similar to the foregoing embodiments, and are not described herein again.
綜上所述，在本發明實施例提供的頂蓋裝置及製程裝置中，上蓋和噴水冷卻部採用彼此分立的方式，在上蓋的第一行程中，上蓋的上表面與噴水冷卻部的擋板的下表面接觸，由上蓋支撐噴水冷卻部並帶動其在豎直方向上運動；在上蓋的第二行程中，噴水冷卻部的噴頭支撐在石英腔的外壁的上表面，且上蓋的上表面與噴水冷卻部的擋板的下表面相分離，此時噴水冷卻部保持靜止狀態而不隨上蓋在豎直方向上的運動而運動。這樣，當噴水冷卻部的噴頭已與石英腔的外壁的上表面相接觸（當噴頭設置有支柱時，則是支柱與石英腔的外壁的上表面相接觸），但上蓋尚未到達下限位置而在電機的帶動下繼續下降時，或者上蓋已到達下限位置但因下限位元感測器的故障而使電機繼續轉動並帶動上蓋繼續下降時，由於上蓋的上表面與噴水冷卻部的擋板的下表面已彼此分離，噴水冷卻部由石英腔的外壁的上表面支撐而非由上蓋的上表面支撐，因此噴水冷卻部並不產生繼續下降的動力，從而不會對石英窗產生大於噴水冷卻部自重的壓力，因而石英窗不會因受力較大而損壞，從而提高了與之配合的石英窗的使用壽命。In summary, in the top cover device and the process device provided by the embodiments of the present invention, the upper cover and the water spray cooling portion are separated from each other, and the upper surface of the upper cover and the baffle of the water spray cooling portion are in the first stroke of the upper cover. The lower surface contact, the spray cooling portion is supported by the upper cover and drives to move in the vertical direction; in the second stroke of the upper cover, the spray head of the spray cooling portion is supported on the upper surface of the outer wall of the quartz chamber, and the upper surface of the upper cover is The lower surface of the baffle of the water spray cooling portion is separated, and at this time, the water spray cooling portion is kept in a stationary state without moving with the movement of the upper cover in the vertical direction. Thus, when the nozzle of the water spray cooling portion has contacted the upper surface of the outer wall of the quartz chamber (when the nozzle is provided with the pillar, the pillar is in contact with the upper surface of the outer wall of the quartz chamber), but the upper cover has not yet reached the lower limit position. When the motor continues to descend, or the upper cover has reached the lower limit position, but the motor continues to rotate due to the failure of the lower limit sensor and the upper cover continues to descend, due to the upper surface of the upper cover and the lower surface of the spray cooling unit The surfaces are separated from each other, and the water spray cooling portion is supported by the upper surface of the outer wall of the quartz chamber instead of being supported by the upper surface of the upper cover, so that the water spray cooling portion does not generate the power to continue to descend, so that the quartz window does not have a larger weight than the water spray cooling portion. The pressure of the quartz window is not damaged by the large force, which increases the service life of the quartz window.
以上所述實施例僅表達了本發明的幾種實施方式，其描述較為具體和詳細，但並不能因此而理解為對本發明專利範圍的限制。應當指出的是，對於本領域的普通技術人員來說，在不脫離本發明構思的前提下，還可以做出若干變形和改進，這些都屬於本發明的保護範圍。因此，本發明專利的保護範圍應以所附申請專利範圍為準。The above-mentioned embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the scope of the appended claims.
100‧‧‧頂蓋裝置
110‧‧‧噴水冷卻部
111‧‧‧噴頭
112‧‧‧進水管
113‧‧‧擋板
114‧‧‧支柱
120‧‧‧上蓋
200‧‧‧塑膠腔
210‧‧‧基座
220‧‧‧水槽
300‧‧‧感應加熱線圈
400‧‧‧石英腔
410‧‧‧石墨盤100‧‧‧Top cover device
110‧‧‧Water spray cooling department
111‧‧‧Spray
112‧‧‧ water inlet
113‧‧‧Baffle
114‧‧‧ pillar
120‧‧‧Upper cover
200‧‧‧ plastic cavity
210‧‧‧Base
220‧‧‧Sink
300‧‧‧Induction heating coil
400‧‧‧Quartz cavity
410‧‧‧ Graphite disk
第1圖為本發明頂蓋裝置一實施例在製程裝置中裝配的剖面示意圖； 第2圖為第1圖所示頂蓋裝置的立體示意圖； 第3圖為第1圖所示頂蓋裝置的剖面示意圖。1 is a schematic cross-sectional view showing an assembly of a top cover device according to an embodiment of the present invention; FIG. 2 is a perspective view of the top cover device shown in FIG. 1; and FIG. 3 is a top cover device shown in FIG. Schematic diagram of the section.
100‧‧‧頂蓋裝置 100‧‧‧Top cover device
110‧‧‧噴水冷卻部 110‧‧‧Water spray cooling department
111‧‧‧噴頭 111‧‧‧Spray
112‧‧‧進水管 112‧‧‧ water inlet
113‧‧‧擋板 113‧‧‧Baffle
114‧‧‧支柱 114‧‧‧ pillar
120‧‧‧上蓋 120‧‧‧Upper cover
200‧‧‧塑膠腔 200‧‧‧ plastic cavity
210‧‧‧基座 210‧‧‧Base
220‧‧‧水槽 220‧‧‧Sink
300‧‧‧感應加熱線圈 300‧‧‧Induction heating coil
400‧‧‧石英腔 400‧‧‧Quartz cavity
410‧‧‧石墨盤 410‧‧‧ Graphite disk
Claims (11)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410174353.3A CN105088334B (en) | 2014-04-28 | 2014-04-28 | Cover device and process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201540867A true TW201540867A (en) | 2015-11-01 |
| TWI515331B TWI515331B (en) | 2016-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW103145769A TW201540867A (en) | 2014-04-28 | 2014-12-26 | Cap device and process apparatus |
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| KR (1) | KR101943994B1 (en) |
| CN (1) | CN105088334B (en) |
| SG (1) | SG11201607878UA (en) |
| TW (1) | TW201540867A (en) |
| WO (1) | WO2015165271A1 (en) |
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| CN116589203B (en) * | 2023-05-11 | 2024-01-09 | 深圳市凯比特微电子有限公司 | Glass seal connector fusion sealing device |
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| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| US5820366A (en) * | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
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| JP4179041B2 (en) * | 2003-04-30 | 2008-11-12 | 株式会社島津製作所 | Deposition device for organic EL protective film, manufacturing method, and organic EL element |
| CN1219315C (en) * | 2003-09-30 | 2005-09-14 | 张国华 | Gallium nitride base film epitaxial growth apparatus by metal organic chemical vapor deposition |
| CN2880850Y (en) * | 2005-10-18 | 2007-03-21 | 昆明理工大学 | Vacuum furnace of extracting aluminium directly from aluminium ore |
| CN2871502Y (en) * | 2006-01-23 | 2007-02-21 | 陈刚 | Water-cooled quartz-pipe reactor |
| CN201183029Y (en) * | 2008-03-24 | 2009-01-21 | 陈华 | Pneumatic self-cleaning nozzle |
| FR2930561B1 (en) * | 2008-04-28 | 2011-01-14 | Altatech Semiconductor | DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE. |
| CN101740336B (en) * | 2008-11-12 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity window and plasma process cavity |
| CN102140686A (en) * | 2010-02-03 | 2011-08-03 | 中国科学院福建物质结构研究所 | Novel polycrystalline silicon smelting furnace |
| CN101824606B (en) * | 2010-05-12 | 2012-06-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical shower type MOCVD reactor |
| CN201793731U (en) * | 2010-08-11 | 2011-04-13 | 上海昀丰光电技术有限公司 | MOCVD equipment and sealing structure of reaction chamber thereof |
| CN102051678B (en) * | 2010-09-03 | 2012-10-31 | 重庆大学 | Magnesium alloy preparation device capable of controlling grain orientation |
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| CN102691100B (en) * | 2011-03-22 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber device and epitaxial equipment with it |
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| KR101429963B1 (en) * | 2012-09-27 | 2014-08-14 | 주식회사 피에스텍 | Crystal growing apparatus |
| CN103074674B (en) * | 2013-01-10 | 2015-05-13 | 中国科学院半导体研究所 | Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment |
| CN103231023B (en) * | 2013-05-06 | 2016-01-06 | 浙江省机电设计研究院有限公司 | For swage automatic temperature-regulator and the method for Iron Mould Coated Sand production line |
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| CN103305907A (en) * | 2013-06-14 | 2013-09-18 | 光垒光电科技（上海）有限公司 | Reaction chamber for epitaxial deposition |
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-
2014
- 2014-04-28 CN CN201410174353.3A patent/CN105088334B/en active Active
- 2014-12-26 TW TW103145769A patent/TW201540867A/en unknown
- 2014-12-29 SG SG11201607878UA patent/SG11201607878UA/en unknown
- 2014-12-29 KR KR1020167030767A patent/KR101943994B1/en active IP Right Grant
- 2014-12-29 WO PCT/CN2014/095290 patent/WO2015165271A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN105088334A (en) | 2015-11-25 |
| WO2015165271A1 (en) | 2015-11-05 |
| CN105088334B (en) | 2018-01-09 |
| TWI515331B (en) | 2016-01-01 |
| KR101943994B1 (en) | 2019-01-31 |
| KR20160140922A (en) | 2016-12-07 |
| SG11201607878UA (en) | 2016-11-29 |
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