SG11201607878UA - Cap device and process apparatus - Google Patents

Cap device and process apparatus

Info

Publication number
SG11201607878UA
SG11201607878UA SG11201607878UA SG11201607878UA SG11201607878UA SG 11201607878U A SG11201607878U A SG 11201607878UA SG 11201607878U A SG11201607878U A SG 11201607878UA SG 11201607878U A SG11201607878U A SG 11201607878UA SG 11201607878U A SG11201607878U A SG 11201607878UA
Authority
SG
Singapore
Prior art keywords
process apparatus
cap device
cap
Prior art date
Application number
SG11201607878UA
Inventor
Haiyang Zhao
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201607878UA publication Critical patent/SG11201607878UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Nozzles (AREA)
SG11201607878UA 2014-04-28 2014-12-29 Cap device and process apparatus SG11201607878UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410174353.3A CN105088334B (en) 2014-04-28 2014-04-28 Cover device and process equipment
PCT/CN2014/095290 WO2015165271A1 (en) 2014-04-28 2014-12-29 Cap device and process apparatus

Publications (1)

Publication Number Publication Date
SG11201607878UA true SG11201607878UA (en) 2016-11-29

Family

ID=54358130

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607878UA SG11201607878UA (en) 2014-04-28 2014-12-29 Cap device and process apparatus

Country Status (5)

Country Link
KR (1) KR101943994B1 (en)
CN (1) CN105088334B (en)
SG (1) SG11201607878UA (en)
TW (1) TW201540867A (en)
WO (1) WO2015165271A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116589203B (en) * 2023-05-11 2024-01-09 深圳市凯比特微电子有限公司 Glass seal connector fusion sealing device

Family Cites Families (27)

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US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5820366A (en) * 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
CN2344411Y (en) * 1998-07-16 1999-10-20 昆山太平洋精密机械有限公司 Spray quenching equipment
KR100346569B1 (en) * 1999-11-09 2002-08-03 코닉 시스템 주식회사 Apparatus for rapid thermal process
JP4179041B2 (en) * 2003-04-30 2008-11-12 株式会社島津製作所 Deposition device for organic EL protective film, manufacturing method, and organic EL element
CN1219315C (en) * 2003-09-30 2005-09-14 张国华 Gallium nitride base film epitaxial growth apparatus by metal organic chemical vapor deposition
CN2880850Y (en) * 2005-10-18 2007-03-21 昆明理工大学 Vacuum furnace of extracting aluminium directly from aluminium ore
CN2871502Y (en) * 2006-01-23 2007-02-21 陈刚 Water-cooled quartz-pipe reactor
CN201183029Y (en) * 2008-03-24 2009-01-21 陈华 Pneumatic self-cleaning nozzle
FR2930561B1 (en) * 2008-04-28 2011-01-14 Altatech Semiconductor DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE.
CN101740336B (en) * 2008-11-12 2013-03-27 北京北方微电子基地设备工艺研究中心有限责任公司 Cavity window and plasma process cavity
CN102140686A (en) * 2010-02-03 2011-08-03 中国科学院福建物质结构研究所 Novel polycrystalline silicon smelting furnace
CN101824606B (en) * 2010-05-12 2012-06-06 中国科学院苏州纳米技术与纳米仿生研究所 Vertical shower type MOCVD reactor
CN201793731U (en) * 2010-08-11 2011-04-13 上海昀丰光电技术有限公司 MOCVD equipment and sealing structure of reaction chamber thereof
CN102051678B (en) * 2010-09-03 2012-10-31 重庆大学 Magnesium alloy preparation device capable of controlling grain orientation
CN202139293U (en) * 2010-09-29 2012-02-08 上海蓝宝光电材料有限公司 Central pillar of metal organic chemical vapor deposition equipment (MOCVD)
CN102691100B (en) * 2011-03-22 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Process chamber device and epitaxial equipment with it
CN105274498B (en) * 2012-05-11 2017-10-27 中微半导体设备(上海)有限公司 Gas spray, its manufacture method and film growth reactor
JP5973299B2 (en) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
KR101429963B1 (en) * 2012-09-27 2014-08-14 주식회사 피에스텍 Crystal growing apparatus
CN103074674B (en) * 2013-01-10 2015-05-13 中国科学院半导体研究所 Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment
CN103231023B (en) * 2013-05-06 2016-01-06 浙江省机电设计研究院有限公司 For swage automatic temperature-regulator and the method for Iron Mould Coated Sand production line
CN103334092B (en) * 2013-06-13 2015-04-22 中国电子科技集团公司第四十八研究所 Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor
CN103305907A (en) * 2013-06-14 2013-09-18 光垒光电科技（上海）有限公司 Reaction chamber for epitaxial deposition
CN103388133A (en) * 2013-08-09 2013-11-13 光垒光电科技（上海）有限公司 MOCVD (Metal-organic Chemical Vapor Deposition) equipment and adjustment method for interval between tray and spray header of equipment
CN103525993B (en) * 2013-09-27 2016-05-25 三一汽车制造有限公司 A kind of quenching apparatus, heat treatment system and heat treatment method
CN103598938B (en) * 2013-11-12 2016-04-20 清华大学 A kind of biomimetic features integral forming equipment adding formula and subtract formula manufacture combination

Also Published As

Publication number Publication date
CN105088334A (en) 2015-11-25
KR20160140922A (en) 2016-12-07
TW201540867A (en) 2015-11-01
CN105088334B (en) 2018-01-09
WO2015165271A1 (en) 2015-11-05
KR101943994B1 (en) 2019-01-31
TWI515331B (en) 2016-01-01

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