TW201537273A - Pixel structure - Google Patents

Pixel structure Download PDF

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TW201537273A
TW201537273A TW103111265A TW103111265A TW201537273A TW 201537273 A TW201537273 A TW 201537273A TW 103111265 A TW103111265 A TW 103111265A TW 103111265 A TW103111265 A TW 103111265A TW 201537273 A TW201537273 A TW 201537273A
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pixel
electrically connected
source
drain
active component
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TW103111265A
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Chinese (zh)
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TWI516852B (en
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Wei-Chun Wei
Kun-Cheng Tien
Chien-Huang Liao
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Au Optronics Corp
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Abstract

A pixel structure includes a scan line, a data line, a first pixel unit and a second pixel unit. The first pixel unit includes a first active device and a pixel electrode electrically connected to the first active device. The first active device includes a first gate electrode, a first source electrode, and a first drain electrode. The first source electrode is electrically connected to the data line. The first drain electrode is electrically connected to the first pixel electrode. The second pixel unit includes a second active device and a second pixel electrode electrically connected to the second active device. The second active device includes a second gate electrode, a second source electrode and a second drain electrode. The first gate electrode and the second gate electrode are electrically connected to the scan line. The second drain electrode is electrically connected to the second pixel electrode. The first drain electrode is electrically connected to the second source electrode.

Description

畫素結構 Pixel structure

本發明是有關於一種畫素結構,且特別是有關於一種主動元件彼此串聯的畫素結構。 The present invention relates to a pixel structure, and more particularly to a pixel structure in which an active element is connected in series with each other.

目前常見的顯示面板的畫素結構是於一個畫素區域中設置一個主動元件搭配單個畫素電極所形成。不過,這樣一來,單個畫素結構中所驅動的顯示介質(例如為液晶化合物)僅會有單一種偏轉程度,故使用者僅能在一定的視角範圍內才能觀看到品質良好的顯示畫面。為實現廣視角的顯示功能,常見的一種畫素設計方法是將一個畫素結構區分成至少兩個以上的畫素區域,其中每一個畫素區域例如是配置一個主動元件以及一個畫素電極。並由不同畫素區域中的畫素電極可具有不同的配向結構及/或具有不同的電位,因此可以使單一畫素結構所驅動的顯示介質具有多種多種不同的配向方向及/或偏轉程度,藉此達成廣視角顯示功能。 At present, the pixel structure of a common display panel is formed by arranging an active component in a pixel region with a single pixel electrode. However, in this way, the display medium (for example, a liquid crystal compound) driven in a single pixel structure has only a single degree of deflection, so that the user can view a good quality display screen only within a certain viewing angle range. In order to realize the display function of wide viewing angle, a common pixel design method is to divide a pixel structure into at least two pixel regions, wherein each pixel region is configured with an active component and a pixel electrode, for example. The pixel electrodes in different pixel regions may have different alignment structures and/or different potentials, so that the display medium driven by the single pixel structure can have a plurality of different alignment directions and/or deflection degrees. Thereby achieving a wide viewing angle display function.

隨著對顯示面板的顯示品質的要求越來越高,高解析度的顯示面板因應誕生。目前已有4K2K解析度的顯示面板被研發出,其畫素結構的數量相當地多(例如是解析度為3840x2160和 4096×2160兩種畫素設計方式)。對應地,每一個畫素結構所分配到的面積相當地小,若是要搭配前述之單一個畫素結構具有多個畫素區域的設計方式,則每一個畫素區域的面積將更為縮減,此時,多個主動元件的設置將會佔據過多空間而造成開口率下降,而且容易有寄生電容過大的問題產生。 As the display quality of the display panel is becoming higher and higher, a high-resolution display panel is born. Currently, 4K2K resolution display panels have been developed, and the number of pixel structures is quite large (for example, the resolution is 3840x2160 and 4096 × 2160 two pixel design methods). Correspondingly, the area allocated by each pixel structure is relatively small. If the design method of the single pixel structure with multiple pixel regions is used, the area of each pixel region will be further reduced. At this time, the setting of the plurality of active elements will occupy too much space, causing the aperture ratio to decrease, and the problem of excessive parasitic capacitance is easily generated.

本發明提供一種畫素結構,其中多個主動元件可透過串聯的方式連接,藉以提升開口率並降低寄生電容。 The present invention provides a pixel structure in which a plurality of active elements can be connected in series to increase an aperture ratio and reduce parasitic capacitance.

本發明的一種畫素結構包括一掃描線、一資料線、一第一畫素單元以及一第二畫素單元。第一畫素單元包括一第一主動元件以及一與第一主動元件電性連接的第一畫素電極,其中第一主動元件包括一第一閘極、一第一源極以及一第一汲極。第一閘極與掃描線電性連接,第一源極與資料線電性連接,第一汲極與第一畫素電極電性連接。第二畫素單元包括一第二主動元件以及一與第二主動元件電性連接的第二畫素電極。第二主動元件包括一第二閘極、一第二源極以及一第二汲極,第二閘極與掃描線電性連接,第二汲極與第二畫素電極電性連接,其中,第一汲極與第二源極電性連接。 A pixel structure of the present invention includes a scan line, a data line, a first pixel unit, and a second pixel unit. The first pixel unit includes a first active component and a first pixel electrode electrically connected to the first active component, wherein the first active component includes a first gate, a first source, and a first pole. The first gate is electrically connected to the scan line, the first source is electrically connected to the data line, and the first drain is electrically connected to the first pixel electrode. The second pixel unit includes a second active component and a second pixel electrode electrically connected to the second active component. The second active device includes a second gate, a second source, and a second drain. The second gate is electrically connected to the scan line, and the second drain is electrically connected to the second pixel. The first drain is electrically connected to the second source.

基於上述,本發明的畫素結構的第一主動元件的第一汲極與第二主動元件的第二源極電性連接,藉以形成彼此串聯的第一主動元件和第二主動元件,因此可以提升畫素結構的開口率並 降低寄生電容,以提供良好的顯示品質。 Based on the above, the first drain of the first active component of the pixel structure of the present invention is electrically connected to the second source of the second active component, thereby forming the first active component and the second active component connected in series with each other, thereby Increase the aperture ratio of the pixel structure and Reduce parasitic capacitance to provide good display quality.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

10、10a、10b、10c‧‧‧畫素陣列 10, 10a, 10b, 10c‧‧‧ pixel array

100、100a、100b、100c‧‧‧畫素結構 100, 100a, 100b, 100c‧‧‧ pixel structure

110‧‧‧掃描線 110‧‧‧ scan line

120‧‧‧資料線 120‧‧‧Information line

130‧‧‧第一畫素單元 130‧‧‧ first pixel unit

132‧‧‧第一主動元件 132‧‧‧First active component

134‧‧‧第一畫素電極 134‧‧‧first pixel electrode

140‧‧‧第二畫素單元 140‧‧‧Second pixel unit

142‧‧‧第二主動元件 142‧‧‧Second active components

144‧‧‧第二畫素電極 144‧‧‧second pixel electrode

150‧‧‧連接電極 150‧‧‧Connecting electrode

160‧‧‧訊號線 160‧‧‧Signal line

170‧‧‧分享單元 170‧‧‧Share unit

172‧‧‧分享主動元件 172‧‧‧Share active components

174‧‧‧分享電容器 174‧‧‧Share capacitor

180‧‧‧第三畫素單元 180‧‧‧ third pixel unit

182‧‧‧第三主動元件 182‧‧‧ Third active component

184‧‧‧第三畫素電極 184‧‧‧ third pixel electrode

C1、C2、C3‧‧‧通道 C1, C2, C3‧‧‧ channels

CL‧‧‧訊號線 CL‧‧‧ signal line

Cs‧‧‧分享電容 Cs‧‧‧Shared Capacitor

D1、D2、D3‧‧‧汲極 D1, D2, D3‧‧‧ bungee

DL‧‧‧資料線 DL‧‧‧ data line

G1、G2、G3‧‧‧閘極 G1, G2, G3‧‧‧ gate

PE1‧‧‧第一畫素電極 PE1‧‧‧ first pixel electrode

PE2‧‧‧第二畫素電極 PE2‧‧‧second pixel electrode

S1、S2、S3‧‧‧源極 S1, S2, S3‧‧‧ source

SS‧‧‧分享源極 SS‧‧‧Shared source

SD‧‧‧分享汲極 SD‧‧‧Share bungee

SG‧‧‧分享閘極 SG‧‧‧ Sharing gate

SC‧‧‧分享通道 SC‧‧‧Share channel

ST‧‧‧分享主動元件 ST‧‧‧Share active components

SE‧‧‧分享電容器 SE‧‧‧Shared capacitor

SL‧‧‧掃描線 SL‧‧‧ scan line

T1‧‧‧第一主動元件 T1‧‧‧ first active component

T2‧‧‧第二主動元件 T2‧‧‧second active component

圖1為本發明一實施例的畫素結構的上視示意圖。 1 is a top plan view of a pixel structure in accordance with an embodiment of the present invention.

圖2為圖1的畫素結構所形成的畫素陣列的上視示意圖。 2 is a top plan view of a pixel array formed by the pixel structure of FIG. 1.

圖3為本發明一實施例的畫素結構的上視示意圖。 3 is a top plan view of a pixel structure in accordance with an embodiment of the present invention.

圖4為圖3的畫素結構所形成的畫素陣列的上視示意圖。 4 is a top plan view of a pixel array formed by the pixel structure of FIG.

圖5為本發明另一實施例的畫素結構的上視示意圖。 FIG. 5 is a top plan view of a pixel structure according to another embodiment of the present invention.

圖6為圖5的畫素結構所形成的畫素陣列的上視示意圖。 6 is a top plan view of a pixel array formed by the pixel structure of FIG. 5.

圖7為圖5的畫素結構的等效電路示意圖。 FIG. 7 is an equivalent circuit diagram of the pixel structure of FIG. 5. FIG.

圖8為比較例1的畫素結構的上視示意圖。 Fig. 8 is a top plan view showing the pixel structure of Comparative Example 1.

圖9為比較例1的畫素結構所形成的畫素陣列的上視示意圖。 Fig. 9 is a top plan view showing a pixel array formed by the pixel structure of Comparative Example 1.

圖1為本發明一實施例的畫素結構的上視示意圖。圖2為圖1的畫素結構所形成的畫素陣列的上視示意圖。請參照圖1和圖2,畫素陣列10包括多個畫素結構100,且這些畫素結構100呈陣列排列。圖2中繪示四個畫素結構100為例說明。但本發明不限於此。畫素陣列10可以包括更多的畫素結構100,依設計需 求而定。如圖1所示,畫素結構100包括一掃描線110、一資料線120、一第一畫素單元130以及一第二畫素單元140。第一畫素單元130以及第二畫素單元140共用同一掃描線110以及同一資料線120。 1 is a top plan view of a pixel structure in accordance with an embodiment of the present invention. 2 is a top plan view of a pixel array formed by the pixel structure of FIG. 1. Referring to FIGS. 1 and 2, the pixel array 10 includes a plurality of pixel structures 100, and the pixel structures 100 are arranged in an array. Four pixel structures 100 are illustrated in FIG. 2 as an example. However, the invention is not limited thereto. The pixel array 10 can include more pixel structures 100, depending on the design It depends. As shown in FIG. 1, the pixel structure 100 includes a scan line 110, a data line 120, a first pixel unit 130, and a second pixel unit 140. The first pixel unit 130 and the second pixel unit 140 share the same scan line 110 and the same data line 120.

第一畫素單元130包括一第一主動元件132以及一第一畫素電極134。第一畫素電極134與第一主動元件132電性連接。第一主動元件132包括一第一閘極G1、一第一通道C1、一第一源極S1以及一第一汲極D1。第一閘極G1和掃描線110電性連接。第一通道C1設置於第一閘極G1上方,且第一閘極G1與第一通道C1之間設置有絕緣層(未繪示)。第一源極S1和資料線120電性連接且覆蓋部分第一通道C1。第一汲極D1和第一源極S1彼此分離且覆蓋部分第一通道C1。第一畫素電極134和第一汲極D1電性連接。 The first pixel unit 130 includes a first active element 132 and a first pixel electrode 134. The first pixel electrode 134 is electrically connected to the first active component 132. The first active device 132 includes a first gate G1, a first channel C1, a first source S1, and a first drain D1. The first gate G1 and the scan line 110 are electrically connected. The first channel C1 is disposed above the first gate G1, and an insulating layer (not shown) is disposed between the first gate G1 and the first channel C1. The first source S1 and the data line 120 are electrically connected and cover a portion of the first channel C1. The first drain D1 and the first source S1 are separated from each other and cover a portion of the first channel C1. The first pixel electrode 134 and the first drain D1 are electrically connected.

第二畫素單元140包括一第二主動元件142以及一第二畫素電極144。第二畫素電極144與第二主動元件142電性連接。第二主動元件142包括一第二閘極G2、一第二通道C2、一第二源極S2以及一第二汲極D2。第二閘極G2和掃描線110電性連接。第二通道C2設置於第二閘極G2上方,且第二閘極G2與第二通道C2之間設置有絕緣層(未繪示)。第二源極S2和第一汲極D1電性連接且覆蓋部分第二通道C2。第二汲極D2和第二源極S2彼此分離且覆蓋部分第二通道C2。第二畫素電極144和第二汲極D2電性連接。以另一角度而言,第一汲極D1和第二源極S2可視為 同一導電圖案,且該導電圖案可同時作為第一主動元件132的第一汲極D1以及第二主動元件142的第二源極S2,據以形成彼此串聯的第一主動元件132和第二主動元件142。 The second pixel unit 140 includes a second active element 142 and a second pixel electrode 144. The second pixel electrode 144 is electrically connected to the second active element 142. The second active component 142 includes a second gate G2, a second channel C2, a second source S2, and a second drain D2. The second gate G2 and the scan line 110 are electrically connected. The second channel C2 is disposed above the second gate G2, and an insulating layer (not shown) is disposed between the second gate G2 and the second channel C2. The second source S2 and the first drain D1 are electrically connected and cover a portion of the second channel C2. The second drain D2 and the second source S2 are separated from each other and cover a portion of the second channel C2. The second pixel electrode 144 and the second drain D2 are electrically connected. In another perspective, the first drain D1 and the second source S2 can be regarded as The same conductive pattern, and the conductive pattern can simultaneously serve as the first drain D1 of the first active component 132 and the second source S2 of the second active component 142, thereby forming the first active component 132 and the second active connected in series with each other Element 142.

一般而言,若是兩個主動元件並聯設置時,則兩個主動元件的源極會連接在一起並且都與掃描線110重疊,因此掃描線110上的寄生電容容易過大,而造成畫素結構100的顯示品質不良。相較之下,本實施例的畫素結構100的第一汲極D1和第二源極S2可由同一導電圖案所構成,因此與掃描線110重疊的導體面積可進一步縮減而減少掃描線110上的寄生電容。同時,可以縮減第一主動元件132和第二主動元件142所佔據的面積,進而提升畫素結構100的開口率。 In general, if two active components are arranged in parallel, the sources of the two active components are connected together and overlap with the scan line 110, so the parasitic capacitance on the scan line 110 is easily excessive, resulting in the pixel structure 100. The display quality is poor. In contrast, the first drain D1 and the second source S2 of the pixel structure 100 of the present embodiment may be formed by the same conductive pattern, so that the conductor area overlapping with the scan line 110 may be further reduced to reduce the scan line 110. Parasitic capacitance. At the same time, the area occupied by the first active element 132 and the second active element 142 can be reduced, thereby increasing the aperture ratio of the pixel structure 100.

此外,由於第一汲極D1和第二源極S2電性連接,因此資料線120所傳遞的資料訊號可透過第一汲極D1寫入第二主動元件142,並藉以驅動第二畫素電極144。換言之,畫素結構100中的第一主動元件132和第二主動元件142為串聯,因此當與畫素結構100電性連接的掃描線110被致能時,與該畫素結構100電性連接的資料線120的資料訊號可寫入第一畫素電極134以及第二畫素電極144,以同時對第一畫素電極134以及第二畫素電極144進行充電並使第一畫素電極134和第二畫素電極144具有相同的電位。 In addition, since the first drain D1 and the second source S2 are electrically connected, the data signal transmitted by the data line 120 can be written into the second active component 142 through the first drain D1, thereby driving the second pixel electrode. 144. In other words, the first active component 132 and the second active component 142 in the pixel structure 100 are connected in series, so when the scan line 110 electrically connected to the pixel structure 100 is enabled, the pixel structure 100 is electrically connected. The data signal of the data line 120 can be written into the first pixel electrode 134 and the second pixel electrode 144 to simultaneously charge the first pixel electrode 134 and the second pixel electrode 144 and make the first pixel electrode 134 The second pixel electrode 144 has the same potential.

以另一角度而言,可以藉由一第一光罩製程形成一第一圖案化導體層,且該第一圖案化導體層包括掃描線110、第一閘極 G1以及第二閘極G2,其材料包括合金、金屬材料、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、透明導電材料、其它導電材料或是上述材料的堆疊層。另外,可以藉由一第二光罩製程形成一第二圖案化導體層,且該第二圖案化導體層包括資料線120、第一源極S1、第一汲極D1、第二源極S2以及第二汲極D2,其材料包括合金、金屬材料、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、透明導電材料、其它導電材料或是上述材料的堆疊層。基於導電性的考量,第一圖案化導體層和第二圖案化導體層的材料較佳是選擇金屬材料或是其他高導電性材料。 In another aspect, a first patterned conductor layer can be formed by a first mask process, and the first patterned conductor layer includes a scan line 110 and a first gate. G1 and the second gate G2, the material of which includes an alloy, a metal material, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, a transparent conductive material, other conductive materials, or a stacked layer of the above materials. In addition, a second patterned conductor layer can be formed by a second mask process, and the second patterned conductor layer includes a data line 120, a first source S1, a first drain D1, and a second source S2. And a second drain D2, the material of which comprises an alloy, a metal material, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, a transparent conductive material, other conductive materials or a stacked layer of the above materials. The material of the first patterned conductor layer and the second patterned conductor layer is preferably a metal material or other highly conductive material based on conductivity considerations.

另外,上述第一畫素電極134和第二畫素電極144可由透明導電材料所構成,例如是銦錫氧化物(ITO)、銦鋅氧化物(IZO)、鋁鋅氧化物(AZO)等,或是其他適合的導電材料,但是不限於此。 In addition, the first pixel electrode 134 and the second pixel electrode 144 may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or the like. Or other suitable conductive materials, but are not limited thereto.

根據本實施例,畫素結構100更包括一連接電極150。連接電極150位於第一汲極D1和第二源極S2之間,其中連接電極150的一端連接至第一汲極D1且另一端連接至第二源極S2。連接電極150不與第一閘極G1、第二閘極G2以及掃描線110重疊。連接電極150可與第一汲極D1和第二源極S2以同一道光罩製程形成,因此連接電極150、第一汲極D1和第二源極S2可以使用相同的材料製成且為連續的膜層。在本實施例中,連接電極150可以將資料訊號由第一汲極D1傳遞至第二源極S2。 According to the embodiment, the pixel structure 100 further includes a connection electrode 150. The connection electrode 150 is located between the first drain D1 and the second source S2, wherein one end of the connection electrode 150 is connected to the first drain D1 and the other end is connected to the second source S2. The connection electrode 150 does not overlap the first gate G1, the second gate G2, and the scanning line 110. The connection electrode 150 can be formed in the same mask process as the first drain D1 and the second source S2, so the connection electrode 150, the first drain D1 and the second source S2 can be made of the same material and continuous. Membrane layer. In this embodiment, the connection electrode 150 can transfer the data signal from the first drain D1 to the second source S2.

根據本實施例,畫素結構100更包括一訊號線160以及一分享單元170。訊號線160例如是與掃描線110平行,但本發明不限於此。在本實施例中,第一畫素電極134與掃描線110位於訊號線160的相對兩側。訊號線160的材料包括合金、金屬材料、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、透明導電材料、其它導電材料或是上述材料的堆疊層。 According to the embodiment, the pixel structure 100 further includes a signal line 160 and a sharing unit 170. The signal line 160 is, for example, parallel to the scanning line 110, but the present invention is not limited thereto. In this embodiment, the first pixel electrode 134 and the scan line 110 are located on opposite sides of the signal line 160. The material of the signal line 160 includes an alloy, a metal material, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, a transparent conductive material, other conductive materials, or a stacked layer of the above materials.

分享單元170包括一分享主動元件172以及一分享電容器174。分享電容器174和分享主動元件172電性連接。分享主動元件172包括一分享閘極SG、一分享通道SC、一分享源極SS以及一分享汲極SD,其中分享閘極SG與訊號線160電性連接。第一汲極D1、第二源極S2與分享源極SS電性相接。分享汲極SD和分享電容器174電性連接。 The sharing unit 170 includes a sharing active component 172 and a sharing capacitor 174. The sharing capacitor 174 and the sharing active component 172 are electrically connected. The shared active component 172 includes a shared gate SG, a shared channel SC, a shared source SS, and a shared drain SD, wherein the shared gate SG is electrically connected to the signal line 160. The first drain D1 and the second source S2 are electrically connected to the shared source SS. Share the electrical connection between the bungee SD and the shared capacitor 174.

分享電容器174包括一底電極174a以及一頂電極174b。底電極174a與頂電極174b之間可夾有絕緣層以使兩者之間具有一耦合電容。底電極174a例如是藉由上述第一光罩製程所形成而屬於上述第一圖案化導體層的一部分。頂電極174b例如是藉由上述第二光罩製程所形成而屬於上述第二圖案化導體層的一部分。當提供訊號至訊號線160以開啟分享主動元件172時,可透過分享電容器174來影響第一畫素電極134的驅動電壓。如此一來,第一畫素電極134可與第二畫素電極144具有不同的驅動電壓,以進一步顯示不同灰階的色彩,以增加具有畫素結構100的顯示面板的視角。 The sharing capacitor 174 includes a bottom electrode 174a and a top electrode 174b. An insulating layer may be interposed between the bottom electrode 174a and the top electrode 174b to have a coupling capacitance therebetween. The bottom electrode 174a is, for example, formed by the first mask process and belongs to a portion of the first patterned conductor layer. The top electrode 174b is formed, for example, by a portion of the second patterned conductor layer formed by the second mask process. When the signal is supplied to the signal line 160 to turn on the sharing active element 172, the driving voltage of the first pixel electrode 134 can be affected by the sharing capacitor 174. As such, the first pixel electrode 134 can have a different driving voltage than the second pixel electrode 144 to further display colors of different gray levels to increase the viewing angle of the display panel having the pixel structure 100.

以下將列舉不同的實施例以說明本發明之畫素結構,其中凡可能之處將使用相同的標號來表示相同的構件,並且省略技術內容相同的說明。圖3為本發明一實施例的畫素結構的上視示意圖。圖4為圖3的畫素結構所形成的畫素陣列的上視示意圖。請參照圖3和圖4,畫素陣列10a包括多個畫素結構100a,且這些畫素結構100a呈陣列排列。圖4中繪示四個畫素結構100a為例說明。但本發明不限於此。畫素陣列10a可以包括更多的畫素結構100,依設計需求而定。如圖3和圖4所示,畫素結構100a與畫素結構100的結構相似,其主要不同之處在於訊號線160和分享單元170的設置位置。在圖3的實施例中,畫素結構100a的第一畫素電極134與訊號線160位於掃描線110的相對兩側。 In the following, various embodiments will be described to illustrate the pixel structure of the present invention, where the same reference numerals will be used to refer to the same components, and the same description will be omitted. 3 is a top plan view of a pixel structure in accordance with an embodiment of the present invention. 4 is a top plan view of a pixel array formed by the pixel structure of FIG. Referring to FIGS. 3 and 4, the pixel array 10a includes a plurality of pixel structures 100a, and the pixel structures 100a are arranged in an array. Four pixel structures 100a are illustrated in FIG. 4 as an example. However, the invention is not limited thereto. The pixel array 10a may include more pixel structures 100 depending on design requirements. As shown in FIG. 3 and FIG. 4, the pixel structure 100a is similar in structure to the pixel structure 100, and the main difference is the setting position of the signal line 160 and the sharing unit 170. In the embodiment of FIG. 3, the first pixel electrode 134 and the signal line 160 of the pixel structure 100a are located on opposite sides of the scan line 110.

圖5為本發明另一實施例的畫素結構的上視示意圖。圖6為圖5的畫素結構所形成的畫素陣列的上視示意圖。圖7為圖5的畫素結構的等效電路示意圖。請參照圖5、圖6和圖7,畫素陣列10b包括多個畫素結構100b,且這些畫素結構100b呈陣列排列。圖6中繪示四個畫素結構100b為例說明。但本發明不限於此。畫素陣列10b可以包括更多的畫素結構100b,依設計需求而定。 FIG. 5 is a top plan view of a pixel structure according to another embodiment of the present invention. 6 is a top plan view of a pixel array formed by the pixel structure of FIG. 5. FIG. 7 is an equivalent circuit diagram of the pixel structure of FIG. 5. FIG. Referring to FIG. 5, FIG. 6, and FIG. 7, the pixel array 10b includes a plurality of pixel structures 100b, and the pixel structures 100b are arranged in an array. The four pixel structure 100b is illustrated in FIG. 6 as an example. However, the invention is not limited thereto. The pixel array 10b may include more pixel structures 100b depending on design requirements.

畫素結構100b和圖1中的畫素結構100相似,以下將針對兩者不同之處說明。畫素結構100b更包括一第三畫素單元180。第三畫素單元180與第一畫素單元130和第二畫素單元140共用同一掃描線110以及同一資料線120。 The pixel structure 100b is similar to the pixel structure 100 of FIG. 1, and the differences will be explained below. The pixel structure 100b further includes a third pixel unit 180. The third pixel unit 180 shares the same scan line 110 and the same data line 120 with the first pixel unit 130 and the second pixel unit 140.

第三畫素單元180包括一第三主動元件182以及一第三畫素電極184。第三畫素電極184與第三主動元件182電性連接。第三主動元件182包括一第三閘極G3、一第三通道C3、一第三源極S3以及一第三汲極D3。第三閘極G3和掃描線110電性連接。第三通道C3設置於第三閘極G3上方且彼此電性絕緣。第三源極S3和第一汲極D1電性連接且覆蓋部分第三通道C3。第三汲極D3和第三源極S3彼此分離且覆蓋部分第三通道C3。第三畫素電極184和第三汲極D3電性連接。在本實施例中,第一閘極G1、第二閘極G2以及第三閘極G3連接在一起。第一通道C1、第二通道C2以及第三通道C3連接在一起。第一汲極D1、第二源極S2以及第三源極S3電性連接在一起。以另一角度而言,第一汲極D1和第二源極S2以及第三源極S3可視為同一導電圖案,且該導電圖案可同時作為第一主動元件132的第一汲極D1、第二主動元件142的第二源極S2以及第三主動元件182的第三源極S3,據以形成彼此串聯的第一主動元件132和第二主動元件142以及彼此串聯的第一主動元件132和第三主動元件182。 The third pixel unit 180 includes a third active element 182 and a third pixel electrode 184. The third pixel electrode 184 is electrically connected to the third active element 182. The third active component 182 includes a third gate G3, a third channel C3, a third source S3, and a third drain D3. The third gate G3 and the scan line 110 are electrically connected. The third channel C3 is disposed above the third gate G3 and electrically insulated from each other. The third source S3 and the first drain D1 are electrically connected and cover a portion of the third channel C3. The third drain D3 and the third source S3 are separated from each other and cover a portion of the third channel C3. The third pixel electrode 184 and the third drain D3 are electrically connected. In the embodiment, the first gate G1, the second gate G2, and the third gate G3 are connected together. The first channel C1, the second channel C2, and the third channel C3 are connected together. The first drain D1, the second source S2, and the third source S3 are electrically connected together. In another aspect, the first drain D1 and the second source S2 and the third source S3 can be regarded as the same conductive pattern, and the conductive pattern can simultaneously serve as the first drain D1 of the first active component 132. The second source S2 of the second active element 142 and the third source S3 of the third active element 182 are formed to form a first active element 132 and a second active element 142 connected in series with each other and a first active element 132 connected in series with each other and The third active component 182.

根據本實施例,畫素結構100b包括訊號線160以及分享單元170。分享單元170包括一分享主動元件172以及一與分享主動元件172電性連接的分享電容器174。分享主動元件172包括一分享閘極SG、一分享通道SC、一分享源極SS以及一分享汲極SD。第一汲極D1、第二源極S2、分享源極SS以及第三源極S3電性連接在一起。以另一角度而言,第一汲極D1和分源源極SS 也可視為同一導電圖案,且該導電圖案可同時作為第一主動元件132的第一汲極D1以及分享主動元件172的分享源極SS,據以形成彼此串聯的第一主動元件132和分享主動元件172。 According to the embodiment, the pixel structure 100b includes a signal line 160 and a sharing unit 170. The sharing unit 170 includes a sharing active component 172 and a sharing capacitor 174 electrically connected to the sharing active component 172. The shared active component 172 includes a shared gate SG, a shared channel SC, a shared source SS, and a shared drain SD. The first drain D1, the second source S2, the shared source SS, and the third source S3 are electrically connected together. From another perspective, the first drain D1 and the split source SS It can also be regarded as the same conductive pattern, and the conductive pattern can simultaneously serve as the first drain D1 of the first active component 132 and the shared source SS of the shared active component 172, thereby forming the first active component 132 and sharing active in series with each other. Element 172.

在本實施例中,分享電容器174包括一底電極174a以及一頂電極174b。底電極174a與頂電極174b之間可夾有絕緣層以使兩者之間具有一耦合電容。底電極174a例如是藉由上述第一光罩製程所形成而屬於上述第一圖案化導體層的一部分。頂電極174b例如是藉由上述第二光罩製程所形成而屬於上述第二圖案化導體層的一部分。當提供訊號至訊號線160以開啟分享主動元件172時,可透過分享電容器174來影響第一畫素電極134的驅動電壓。如此一來,第一畫素電極134可與第二畫素電極144以及第三畫素電極184具有不同的驅動電壓,以進一步顯示不同灰階的色彩,以增加具有畫素結構100的顯示面板的視角。 In the present embodiment, the sharing capacitor 174 includes a bottom electrode 174a and a top electrode 174b. An insulating layer may be interposed between the bottom electrode 174a and the top electrode 174b to have a coupling capacitance therebetween. The bottom electrode 174a is, for example, formed by the first mask process and belongs to a portion of the first patterned conductor layer. The top electrode 174b is formed, for example, by a portion of the second patterned conductor layer formed by the second mask process. When the signal is supplied to the signal line 160 to turn on the sharing active element 172, the driving voltage of the first pixel electrode 134 can be affected by the sharing capacitor 174. In this way, the first pixel electrode 134 can have different driving voltages from the second pixel electrode 144 and the third pixel electrode 184 to further display colors of different gray levels to increase the display panel having the pixel structure 100. Perspective.

詳細而言,請參照圖6和圖7來說明本實施例的畫素結構100b,第一主動元件132、第二主動元件142和第三主動元件182都電性連接至掃描線110,而其中只有第一主動元件132的第一源極S1與資料線120連接。當掃描線110被致能而訊號線160未被致能時,資料線120上的資料訊號會寫入第一主動元件132,此時,由於第一主動元件132與第二主動元件142串聯,且第一主動元件132與第三主動元件182串聯,因此資料線120上的資料訊號也會寫入第二主動元件142以及第三主動元件182。換言之,當掃描線110開啟時,可對第一畫素電極134、第二畫素電極 144以及第三畫素電極184進行充電。在本實施例中,由於畫素結構100b被區分為三個區塊,且每一個區塊分別配置有一個畫素電極(即第一、第二和第三畫素電極),相較於習知單個畫素結構僅具有單個面積較大的畫素電極而言,本實施例的各畫素電極具有較小的面積,因此本實施例的各主動元件可以相對縮小並且以串聯方式連接,因此這些主動元件不會在畫素結構100b中佔據過多的空間,故能提升畫素結構100b的開口率。 In detail, the pixel structure 100b of the embodiment is described with reference to FIG. 6 and FIG. 7. The first active component 132, the second active component 142, and the third active component 182 are all electrically connected to the scan line 110, and only The first source S1 of the first active component 132 is connected to the data line 120. When the scan line 110 is enabled and the signal line 160 is disabled, the data signal on the data line 120 is written into the first active component 132. At this time, since the first active component 132 is connected in series with the second active component 142, The first active component 132 is connected in series with the third active component 182. Therefore, the data signals on the data line 120 are also written into the second active component 142 and the third active component 182. In other words, when the scan line 110 is turned on, the first pixel electrode 134 and the second pixel electrode may be 144 and the third pixel electrode 184 are charged. In the present embodiment, since the pixel structure 100b is divided into three blocks, and each of the blocks is respectively provided with one pixel electrode (ie, the first, second, and third pixel electrodes), compared to the Knowing that a single pixel structure has only a single pixel electrode having a large area, the pixel electrodes of the embodiment have a small area, so the active elements of the embodiment can be relatively narrowed and connected in series, thus These active elements do not occupy too much space in the pixel structure 100b, so the aperture ratio of the pixel structure 100b can be improved.

以下將對實施例1和比較例1的畫素結構進行模擬評估。實施例1的畫素結構可參考圖1。圖8為比較例1的畫素結構的上視示意圖,圖9為比較例1的畫素結構所形成的畫素陣列的上視示意圖。請參照圖8和圖9,畫素陣列10c包括多個畫素結構100c。畫素結構100c包括一掃描線SL、一資料線DL、一訊號線CL、一第一主動元件T1、一第一畫素電極PE1、一第二主動元件T2、一第二畫素電極PE2、一分享主動元件ST以及一分享電容器SE。第一主動元件T1和第二主動元件T2共用同一掃描線SL以及同一資料線DL。第一畫素電極PE1和第一主動元件T1電性連接。第二畫素電極PE2和第二主動元件T2電性連接。分享電容器SE和分享主動元件ST電性連接。在本實施例中,第一主動元件T1和第二主動元件T2彼此並聯。 The pixel structure of Example 1 and Comparative Example 1 will be subjected to simulation evaluation below. The pixel structure of Embodiment 1 can be referred to FIG. 8 is a top view of the pixel structure of Comparative Example 1, and FIG. 9 is a top view of the pixel array formed by the pixel structure of Comparative Example 1. Referring to FIGS. 8 and 9, the pixel array 10c includes a plurality of pixel structures 100c. The pixel structure 100c includes a scan line SL, a data line DL, a signal line CL, a first active device T1, a first pixel electrode PE1, a second active device T2, and a second pixel electrode PE2. An active component ST and a shared capacitor SE are shared. The first active device T1 and the second active device T2 share the same scan line SL and the same data line DL. The first pixel electrode PE1 and the first active device T1 are electrically connected. The second pixel electrode PE2 and the second active device T2 are electrically connected. Sharing the capacitor SE and sharing the active component ST electrical connection. In the present embodiment, the first active element T1 and the second active element T2 are connected in parallel with each other.

表一為實施例1和比較例1的畫素結構進行充電後的評估結果。 Table 1 shows the evaluation results after charging the pixel structures of Example 1 and Comparative Example 1.

由表一可知,相較於比較例1的畫素結構,實施例1的畫素結構的掃描線以及資料線的寄生電容明顯降低,而且實施例1的畫素結構的畫素電極仍可維持足夠的充電率。 As can be seen from Table 1, the pixel structure of the pixel structure of the first embodiment is significantly lower than that of the pixel structure of the first embodiment, and the pixel electrode of the pixel structure of the first embodiment can be maintained. Enough charging rate.

綜上所述,本發明的畫素結構的第一主動元件的第一汲極與第二主動元件的第二源極電性連接,藉以形成彼此串聯的第一主動元件和第二主動元件,因此可以提升畫素結構的開口率並降低寄生電容,以提供良好的顯示品質。 In summary, the first drain of the first active component of the pixel structure of the present invention is electrically connected to the second source of the second active component, thereby forming a first active component and a second active component connected in series with each other. Therefore, the aperture ratio of the pixel structure can be improved and the parasitic capacitance can be reduced to provide good display quality.

100‧‧‧畫素結構 100‧‧‧ pixel structure

110‧‧‧掃描線 110‧‧‧ scan line

120‧‧‧資料線 120‧‧‧Information line

130‧‧‧第一畫素單元 130‧‧‧ first pixel unit

132‧‧‧第一主動元件 132‧‧‧First active component

134‧‧‧第一畫素電極 134‧‧‧first pixel electrode

140‧‧‧第二畫素單元 140‧‧‧Second pixel unit

142‧‧‧第二主動元件 142‧‧‧Second active components

144‧‧‧第二畫素電極 144‧‧‧second pixel electrode

150‧‧‧連接電極 150‧‧‧Connecting electrode

160‧‧‧訊號線 160‧‧‧Signal line

170‧‧‧分享單元 170‧‧‧Share unit

172‧‧‧分享主動元件 172‧‧‧Share active components

174‧‧‧分享電容器 174‧‧‧Share capacitor

174a‧‧‧底電極 174a‧‧‧ bottom electrode

174b‧‧‧頂電極 174b‧‧‧ top electrode

C1、C2‧‧‧通道 C1, C2‧‧‧ channel

D1、D2‧‧‧汲極 D1, D2‧‧‧ bungee

G1、G2‧‧‧閘極 G1, G2‧‧‧ gate

S1、S2‧‧‧源極 S1, S2‧‧‧ source

SS‧‧‧分享源極 SS‧‧‧Shared source

SD‧‧‧分享汲極 SD‧‧‧Share bungee

SG‧‧‧分享閘極 SG‧‧‧ Sharing gate

SC‧‧‧分享通道 SC‧‧‧Share channel

Claims (8)

一種畫素結構,包括:一掃描線;一資料線;一第一畫素單元,包括一第一主動元件以及一與該第一主動元件電性連接的第一畫素電極,其中該第一主動元件包括一第一閘極、一第一源極以及一第一汲極,該第一閘極與該掃描線電性連接,該第一源極與該資料線電性連接,該第一汲極與該第一畫素電極電性連接;以及一第二畫素單元,包括一第二主動元件以及一與該第二主動元件電性連接的第二畫素電極,其中該第二主動元件包括一第二閘極、一第二源極以及一第二汲極,該第二閘極與該掃描線電性連接,該第二汲極與該第二畫素電極電性連接,其中,該第一汲極與該第二源極電性連接。 A pixel structure includes: a scan line; a data line; a first pixel unit, including a first active component and a first pixel electrode electrically connected to the first active component, wherein the first pixel The active device includes a first gate, a first source, and a first drain. The first gate is electrically connected to the scan line, and the first source is electrically connected to the data line. The drain is electrically connected to the first pixel electrode; and a second pixel unit includes a second active component and a second pixel electrode electrically connected to the second active component, wherein the second active component The device includes a second gate, a second source, and a second drain. The second gate is electrically connected to the scan line, and the second drain is electrically connected to the second pixel electrode. The first drain is electrically connected to the second source. 如申請專利範圍第1項所述的畫素結構,更包括一連接電極,該連接電極的一端連接至該第一汲極,且該連接電極的另一端連接至該第二源極。 The pixel structure of claim 1, further comprising a connection electrode, one end of the connection electrode being connected to the first drain, and the other end of the connection electrode being connected to the second source. 如申請專利範圍第2項所述的畫素結構,其中該連接電極不與該掃描線重疊。 The pixel structure of claim 2, wherein the connection electrode does not overlap the scan line. 如申請專利範圍第1項所述的畫素結構,更包括一第三畫素單元,該第三畫素單元包括一第三主動元件以及一與該第三主動元件電性連接的一第三畫素電極,該第三主動元件包括一第三 閘極、一第三源極以及一第三汲極,該第三閘極與該掃描線電性連接,該第三汲極與該第三畫素電極電性連接,其中,該第一汲極、該第二源極以及該第三源極電性連接在一起。 The pixel structure of claim 1, further comprising a third pixel unit, the third pixel unit comprising a third active component and a third electrically connected to the third active component a pixel electrode, the third active component including a third a gate, a third source, and a third drain, the third gate is electrically connected to the scan line, and the third drain is electrically connected to the third pixel electrode, wherein the first turn The pole, the second source and the third source are electrically connected together. 如申請專利範圍第1項所述的畫素結構,更包括一訊號線以及一分享單元,該分享單元包括一分享主動元件以及一與該分享主動元件電性連接的一分享電容器,該分享主動元件包括一分享閘極、一分享源極以及一分享汲極,其中該分享閘極與該訊號線電性連接,該第一汲極、該第二源極與該分享源極電性相接。 The pixel structure of claim 1, further comprising a signal line and a sharing unit, the sharing unit comprising a sharing active component and a sharing capacitor electrically connected to the sharing active component, the sharing initiative The component includes a shared gate, a shared source, and a shared drain, wherein the shared gate is electrically connected to the signal line, and the first drain and the second source are electrically connected to the shared source . 如申請專利範圍第5項所述的畫素結構,更包括一第三畫素單元,該第三畫素單元包括一第三主動元件以及一與該第三主動元件電性連接的一第三畫素電極,該第三主動元件包括一第三閘極、一第三源極以及一第三汲極,該第三閘極與該掃描線電性連接,該第三汲極與該第三畫素電極電性連接,其中,該第一汲極、該第二源極、該分享源極以及該第三源極電性連接在一起。 The pixel structure of claim 5, further comprising a third pixel unit, the third pixel unit comprising a third active component and a third electrically connected to the third active component The third active device includes a third gate, a third source, and a third drain. The third gate is electrically connected to the scan line, and the third drain and the third The pixel electrode is electrically connected, wherein the first drain, the second source, the shared source, and the third source are electrically connected together. 如申請專利範圍第5項所述的畫素結構,其中該第一畫素電極與該掃描線位於該訊號線的相對兩側。 The pixel structure of claim 5, wherein the first pixel electrode and the scan line are located on opposite sides of the signal line. 如申請專利範圍第5項所述的畫素結構,其中該第一畫素電極與該訊號線位於該掃描線的相對兩側。 The pixel structure of claim 5, wherein the first pixel electrode and the signal line are located on opposite sides of the scan line.
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