CN103984173B - Pixel structure - Google Patents
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- CN103984173B CN103984173B CN201410224975.2A CN201410224975A CN103984173B CN 103984173 B CN103984173 B CN 103984173B CN 201410224975 A CN201410224975 A CN 201410224975A CN 103984173 B CN103984173 B CN 103984173B
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- 239000003990 capacitor Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- 239000007769 metal material Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A pixel structure comprises a scanning line, a data line, a first pixel unit and a second pixel unit. The first pixel unit comprises a first active element and a first pixel electrode electrically connected with the first active element. The first active device includes a first gate, a first source, and a first drain. The first source electrode is electrically connected with the data line. The first drain electrode is electrically connected with the first pixel electrode. The second pixel unit comprises a second active element and a second pixel electrode electrically connected with the second active element. The second active element comprises a second grid, a second source and a second drain, and the first grid and the second grid are electrically connected with the scanning line. The second drain electrode is electrically connected with the second pixel electrode, wherein the first drain electrode is electrically connected with the second source electrode.
Description
Technical field
The present invention relates to a kind of dot structure, and the picture being one another in series in particular to a kind of active member
Element structure.
Background technology
The dot structure of the most common display floater is to arrange an active element in a pixel region
The part single pixel electrode of collocation is formed.But, so, driven in single dot structure is aobvious
Show that medium (for example, liquid-crystal compounds) only has single kind of degree of deflection, therefore user is only capable of necessarily
Angular field of view in just can watch the good display picture of quality.For realizing the display function of wide viewing angle,
Common a kind of pixel method for designing is that a dot structure is distinguished at least two pixel region
Territory, each of which pixel region e.g. configures an active member and a pixel electrode.And by
Pixel electrode in different pixels region can have different alignment structures and/or have different current potentials, because of
This display medium that single dot structure can be made to be driven has multiple different alignment direction and/or partially
Carryover degree, thereby reaches wide viewing angle display function.
Along with the requirement of the display quality to display floater is more and more higher, the display floater of high-res in response to
It is born.The display floater having 4K2K resolution at present is developed, and the quantity of its dot structure is suitable
Ground many (e.g. resolution is 3840x2160 and 4096 × 2,160 two kind pixel designs).Right
Ying Di, the area assigned by each dot structure is the least, if being intended to arrange in pairs or groups aforesaid single
Dot structure has the design of multiple pixel region, then the area of each pixel region will more contract
Subtracting, now, the setting of multiple active members will occupy too much space and cause aperture opening ratio to decline, and
The problem easily having parasitic capacitance excessive produces.
Summary of the invention
The present invention provides a kind of dot structure, and plurality of active member can connect by the way of series connection,
Use increasing opening rate and reduce parasitic capacitance.
A kind of dot structure of the present invention include scan line, a data wire, one first pixel cell and
One second pixel cell.First pixel cell includes one first active member and one and first active member
The first pixel electrode being electrically connected with, wherein the first active member includes a first grid, one first source electrode
And one first drain electrode.First grid is electrically connected with scan line, and the first source electrode is electrically connected with data wire,
First drain electrode is electrically connected with the first pixel electrode.Second pixel cell include one second active member and
One and second active member be electrically connected with the second pixel electrode.Second active member includes a second gate
Pole, one second source electrode and one second drain electrode, second grid and scan line be electrically connected with, the second drain electrode with
Second pixel electrode is electrically connected with, and wherein, the first drain electrode is electrically connected with the second source electrode.
Based on above-mentioned, the first drain electrode of the first active member of the dot structure of the present invention and the second active element
Second source electrode of part is electrically connected with, and uses and forms the first active member and the second active element being one another in series
Part, therefore can promote the aperture opening ratio of dot structure and reduce parasitic capacitance, to provide good display product
Matter.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate
Accompanying drawing is described in detail below.
Accompanying drawing explanation
Fig. 1 is the upper schematic diagram of the dot structure of one embodiment of the invention.
The upper schematic diagram of the pel array that the dot structure that Fig. 2 is Fig. 1 is formed.
Fig. 3 is the upper schematic diagram of the dot structure of one embodiment of the invention.
The upper schematic diagram of the pel array that the dot structure that Fig. 4 is Fig. 3 is formed.
Fig. 5 is the upper schematic diagram of the dot structure of another embodiment of the present invention.
The upper schematic diagram of the pel array that the dot structure that Fig. 6 is Fig. 5 is formed.
Fig. 7 is the schematic equivalent circuit of the dot structure of Fig. 5.
Fig. 8 is the upper schematic diagram of the dot structure of comparative example 1.
The upper schematic diagram of the pel array that Fig. 9 is formed by the dot structure of comparative example 1.
Description of reference numerals in above-mentioned accompanying drawing is as follows:
10,10a, 10b, 10c: pel array
100,100a, 100b, 100c: dot structure
110: scan line
120: data wire
130: the first pixel cells
132: the first active members
134: the first pixel electrodes
140: the second pixel cells
142: the second active members
144: the second pixel electrodes
150: connect electrode
160: holding wire
170: share unit
172: share active member
174: sharing capacitor
180: the three pixel cells
182: the three active members
184: the three pixel electrodes
C1, C2, C3: passage
CL: holding wire
Cs: share electric capacity
D1, D2, D3: drain electrode
DL: data wire
G1, G2, G3: grid
PE1: the first pixel electrode
PE2: the second pixel electrode
S1, S2, S3: source electrode
SS: share source electrode
SD: share drain electrode
SG: share grid
SC: share passage
ST: share active member
SE: sharing capacitor
SL: scan line
T1: the first active member
T2: the second active member
Detailed description of the invention
Fig. 1 is the upper schematic diagram of the dot structure of one embodiment of the invention.Fig. 2 is the pixel knot of Fig. 1
The upper schematic diagram of the pel array that structure is formed.Refer to Fig. 1 and Fig. 2, pel array 10 includes many
Individual dot structure 100, and these dot structures 100 arrange in array.Fig. 2 illustrates four pixel knots
Explanation as a example by structure 100.But the invention is not restricted to this.Pel array 10 can include that more pixel is tied
Structure 100, depending on design requirement.As it is shown in figure 1, dot structure 100 include scan line 110,
One data wire 120,1 first pixel cell 130 and one second pixel cell 140.First pixel list
Unit 130 and the second pixel cell 140 share with scan line 110 and same data wire 120.
First pixel cell 130 includes one first active member 132 and one first pixel electrode 134.
First pixel electrode 134 is electrically connected with the first active member 132.First active member 132 includes one
First grid G1, a first passage C1, one first source S 1 and one first drain D 1.The first grid
Pole G1 and scan line 110 are electrically connected with.First passage C1 is arranged at above first grid G1, and the
Insulating barrier (not illustrating) it is provided with between one grid G 1 and first passage C1.First source S 1 and data
Line 120 is electrically connected with and covering part first passage C1.First drain D 1 and the first source S 1 are each other
Separate and covering part first passage C1.First pixel electrode 134 and the first drain D 1 are electrically connected with.
Second pixel cell 140 includes one second active member 142 and one second pixel electrode 144.
Second pixel electrode 144 is electrically connected with the second active member 142.Second active member 142 includes one
Second grid G2, a second channel C2, one second source S 2 and one second drain D 2.Second gate
Pole G2 and scan line 110 are electrically connected with.Second channel C2 is arranged at above second grid G2, and the
Insulating barrier (not illustrating) it is provided with between two grid G 2 and second channel C2.Second source S 2 and first
Drain D 1 is electrically connected with and covering part second channel C2.Second drain D 2 and the second source S 2 are each other
Separate and covering part second channel C2.Second pixel electrode 144 and the second drain D 2 are electrically connected with.
For another angle, the first drain D 1 and the second source S 2 can be considered same conductive pattern, and this is led
Electrical pattern can be simultaneously as the first drain D 1 and the second active member 142 of the first active member 132
The second source S 2, form the first active member 132 and the second active member 142 being one another in series according to this.
If during it is said that in general, two active members are arranged in parallel, then the source electrode of two active members can connect
Being connected together and all overlapping with scan line 110, therefore the parasitic capacitance in scan line 110 is the most excessive,
And cause the display quality of dot structure 100 bad.In comparison, the dot structure 100 of the present embodiment
The first drain D 1 and the second source S 2 can be made up of same conductive pattern, therefore with scan line 110
Overlapping conductor area can reduce further and reduce the parasitic capacitance in scan line 110.Meanwhile, permissible
Reduce the area occupied by the first active member 132 and the second active member 142, and then promote pixel knot
The aperture opening ratio of structure 100.
Additionally, due to the first drain D 1 and the second source S 2 are electrically connected with, therefore data wire 120 institute
The data-signal of transmission can write the second active member 142 by the first drain D 1, and uses driving the
Two pixel electrodes 144.In other words, the first active member 132 and the second active in dot structure 100
Element 142 is series connection, therefore when the scan line 110 being electrically connected with dot structure 100 is enabled,
Writable first pixel electrode of data-signal with the data wire 120 that this dot structure 100 is electrically connected with
134 and second pixel electrode 144, with simultaneously to the first pixel electrode 134 and the second pixel electrode
144 are charged and make the first pixel electrode 134 and the second pixel electrode 144 have identical current potential.
For another angle, one first patterning conductor layer can be formed by one first masking process,
And this first patterning conductor layer includes scan line 110, first grid G1 and second grid G2, its
Material includes alloy, metal material, the nitride of metal material, the oxide of metal material, metal material
Nitrogen oxides, transparent conductive material, other conductive material or the stack layer of above-mentioned material of material.It addition,
One second patterning conductor layer, and this second patterning conductor layer can be formed by one second masking process
Including data wire the 120, first source S the 1, first drain D the 1, second source S 2 and the second drain electrode
D2, its material include alloy, metal material, the nitride of metal material, the oxide of metal material,
The nitrogen oxides of metal material, transparent conductive material, other conductive material or the stack layer of above-mentioned material.
Based on electric conductivity consider, the preferably choosing of the material of the first patterning conductor layer and the second patterning conductor layer
Select metal material or other high conductivity material.
It addition, above-mentioned first pixel electrode 134 and the second pixel electrode 144 can be by transparent conductive material institutes
Constitute, e.g. indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) etc., or
It is other conductive materials being suitable for, but is not limited to this.
According to the present embodiment, dot structure 100 further includes a connection electrode 150.Connect 150, electrode
Between the first drain D 1 and the second source S 2, the one end wherein connecting electrode 150 is connected to the first leakage
Pole D1 and the other end are connected to the second source S 2.Connect electrode 150 not with first grid G1, second
Grid G 2 and scan line 110 are overlapping.Connecting electrode 150 can be with the first drain D 1 and the second source electrode
S2 with along with masking process formed, therefore connect electrode the 150, first drain D 1 and the second source S 2
Identical material can be used to make and for continuous print film layer.In the present embodiment, connecting electrode 150 can
So that data-signal is transferred to the second source S 2 by the first drain D 1.
According to the present embodiment, dot structure 100 further includes a holding wire 160 and and shares unit 170.
Holding wire 160 is e.g. parallel with scan line 110, but the invention is not restricted to this.In the present embodiment,
First pixel electrode 134 and scan line 110 are positioned at the opposite sides of holding wire 160.Holding wire 160
Material includes alloy, metal material, the nitride of metal material, the oxide of metal material, metal material
Nitrogen oxides, transparent conductive material, other conductive material or the stack layer of above-mentioned material of material.
Share unit 170 and include that one shares active member 172 and a sharing capacitor 174.Share electricity
Container 174 is electrically connected with sharing active member 172.Share active member 172 and include that one shares grid
SG, one share passage SC, one share source S S and share drain electrode SD, wherein share grid SG
It is electrically connected with holding wire 160.First drain D the 1, second source S 2 with share the electrical phase of source S S
Connect.Share drain electrode SD and sharing capacitor 174 is electrically connected with.
Sharing capacitor 174 includes an a hearth electrode 174a and top electrode 174b.Hearth electrode 174a
Insulating barrier can be accompanied so that having one between the two to couple electric capacity with between top electrode 174b.Hearth electrode 174a
E.g. formed by above-mentioned first masking process and belonged to of above-mentioned first patterning conductor layer
Point.Top electrode 174b is e.g. formed by above-mentioned second masking process and is belonged to above-mentioned second pattern
Change a part for conductor layer.When providing signal to share active member 172 to holding wire 160 with unlatching,
The driving voltage of the first pixel electrode 134 can be affected by sharing capacitor 174.Consequently, it is possible to the
One pixel electrode 134 can have different driving voltages from the second pixel electrode 144, with display further
The color of different GTGs, to increase the visual angle of the display floater with dot structure 100.
The different embodiments dot structure with the explanation present invention will be enumerated below, will in place of the most all possibilities
Use identical label to represent identical component, and omit the explanation that technology contents is identical.Fig. 3 is
The upper schematic diagram of the dot structure of one embodiment of the invention.The dot structure that Fig. 4 is Fig. 3 is formed
The upper schematic diagram of pel array.Refer to Fig. 3 and Fig. 4, pel array 10a and include that multiple pixel is tied
Structure 100a, and these dot structures 100a is, and array arranges.Fig. 4 illustrates four dot structure 100a
As a example by explanation.But the invention is not restricted to this.Pel array 10a can include more dot structure 100,
Depending on design requirement.As shown in Figure 3 and Figure 4, dot structure 100a and the knot of dot structure 100
Structure is similar, be holding wire 160 in place of its main difference with share unit 170 position is set.At figure
In the embodiment of 3, first pixel electrode 134 of dot structure 100a is positioned at scan line with holding wire 160
The opposite sides of 110.
Fig. 5 is the upper schematic diagram of the dot structure of another embodiment of the present invention.Fig. 6 is the pixel of Fig. 5
The upper schematic diagram of the pel array that structure is formed.Fig. 7 is that the equivalent circuit of the dot structure of Fig. 5 shows
It is intended to.Refer to Fig. 5, Fig. 6 and Fig. 7, pel array 10b includes multiple dot structure 100b, and
These dot structures 100b is array arrangement.Fig. 6 illustrates explanation as a example by four dot structure 100b.
But the invention is not restricted to this.Pel array 10b can include more dot structure 100b, needs according to design
Depending on asking.
Dot structure 100 in dot structure 100b with Fig. 1 is similar, below for both differences
Place's explanation.Dot structure 100b further includes one the 3rd pixel cell 180.3rd pixel cell 180 and
One pixel cell 130 and the second pixel cell 140 share with scan line 110 and same data wire
120。
3rd pixel cell 180 includes one the 3rd active member 182 and one the 3rd pixel electrode 184.
3rd pixel electrode 184 is electrically connected with the 3rd active member 182.3rd active member 182 includes one
3rd grid G 3, third channel C3, one the 3rd source S 3 and one the 3rd drain D 3.3rd grid
Pole G3 and scan line 110 are electrically connected with.Third channel C3 is arranged at above the 3rd grid G 3 and each other
It is electrically insulated.3rd source S 3 and the first drain D 1 is electrically connected with and covering part third channel C3.
3rd drain D 3 and the 3rd source S 3 is separated from one another and covering part third channel C3.3rd pixel electricity
Pole 184 and the 3rd drain D 3 are electrically connected with.In the present embodiment, first grid G1, second grid
G2 and the 3rd grid G 3 link together.First passage C1, second channel C2 and third channel
C3 links together.First drain D the 1, second source S 2 and the 3rd source S 3 are electrically connected at one
Rise.For another angle, the first drain D 1 and the second source S 2 and the 3rd source S 3 can be considered
Same conductive pattern, and this conductive pattern can simultaneously as the first drain D 1 of the first active member 132,
Second source S 2 and the 3rd source S 3 of the 3rd active member 182 of the second active member 142, according to
To form the first active member 132 of being one another in series and the second active member 142 and be one another in series the
One active member 132 and the 3rd active member 182.
According to the present embodiment, dot structure 100b includes holding wire 160 and shares unit 170.Point
Enjoy unit 170 include one share active member 172 and one with share what active member 172 was electrically connected with
Sharing capacitor 174.Share active member 172 include one share grid SG, one share passage SC,
One shares source S S and shares drain electrode SD.First drain D the 1, second source S 2, share source electrode
SS and the 3rd source S 3 are electrically connected.For another angle, the first drain D 1 and point
Pole SS also can be considered same conductive pattern in a steady stream, and this conductive pattern can be simultaneously as the first active member
First drain D 1 of 132 and share active member 172 share source S S, formed according to this and go here and there each other
Connection the first active member 132 with share active member 172.
In the present embodiment, sharing capacitor 174 includes an a hearth electrode 174a and top electrode 174b.
Insulating barrier can be accompanied so that having one between the two to couple electricity between hearth electrode 174a with top electrode 174b
Hold.Hearth electrode 174a is e.g. formed by above-mentioned first masking process and is belonged to above-mentioned first pattern
Change a part for conductor layer.Top electrode 174b is e.g. formed by above-mentioned second masking process and is belonged to
A part in above-mentioned second patterning conductor layer.Master is shared to holding wire 160 to open when providing signal
During dynamic element 172, the driving voltage of the first pixel electrode 134 can be affected by sharing capacitor 174.
Consequently, it is possible to the first pixel electrode 134 can be with the second pixel electrode 144 and the 3rd pixel electrode 184
There is different driving voltages, with the color of the different GTG of display further, to increase, there is dot structure
The visual angle of the display floater of 100.
Specifically, refer to Fig. 6 and Fig. 7 so that the dot structure 100b of the present embodiment to be described, first is main
Dynamic element the 132, second active member 142 and the 3rd active member 182 are all electrically connected to scan line 110,
And wherein only have the first source S 1 of the first active member 132 to be connected with data wire 120.Work as scan line
110 are enabled and time holding wire 160 is not enabled, and the data-signal on data wire 120 can write first
Active member 132, now, owing to the first active member 132 is connected with the second active member 142, and
First active member 132 is connected with the 3rd active member 182, therefore the data-signal on data wire 120
Also the second active member 142 and the 3rd active member 182 can be write.In other words, when scan line 110
During unlatching, can be to the first pixel electrode the 134, second pixel electrode 144 and the 3rd pixel electrode 184
It is charged.In the present embodiment, owing to dot structure 100b is divided into three blocks and each
Individual block is each configured with a pixel electrode (i.e. first, second, and third pixel electrode), compared to
For known single dot structure only has the pixel electrode that single area is bigger, each pixel of the present embodiment
Electrode has less area, and therefore each active member of the present embodiment can be with relative decrease and with series connection
Mode connects, and therefore these active members will not occupy too much space in dot structure 100b, therefore
The aperture opening ratio of dot structure 100b can be promoted.
The dot structure of embodiment 1 and comparative example 1 will be simulated assessment below.The picture of embodiment 1
Element structure refers to Fig. 1.Fig. 8 is the upper schematic diagram of the dot structure of comparative example 1, and Fig. 9 is for comparing
The upper schematic diagram of the pel array that the dot structure of example 1 is formed.Refer to Fig. 8 and Fig. 9, pixel
Array 10c includes multiple dot structure 100c.Dot structure 100c includes scan line SL, data
Line DL, a holding wire CL, one first active member T1, one first pixel electrode PE1, one second master
Dynamic element T2, one second pixel electrode PE2, one share active member ST and sharing capacitor SE.
First active member T1 and the second active member T2 shares with scan line SL and same data wire
DL.First pixel electrode PE1 and the first active member T1 is electrically connected with.Second pixel electrode PE2 and
Second active member T2 is electrically connected with.Sharing capacitor SE is electrically connected with sharing active member ST.
In the present embodiment, the first active member T1 and the second active member T2 is connected in parallel to each other.
Table one is the assessment result after the dot structure of embodiment 1 and comparative example 1 is charged.
As shown in Table 1, compared to the dot structure of comparative example 1, the scanning of the dot structure of embodiment 1
The parasitic capacitance of line and data wire substantially reduces, and the pixel electrode of the dot structure of embodiment 1 is still
Enough charge rates can be maintained.
In sum, the first drain electrode and the second active element of the first active member of the dot structure of the present invention
Second source electrode of part is electrically connected with, and uses and forms the first active member and the second active element being one another in series
Part, therefore can promote the aperture opening ratio of dot structure and reduce parasitic capacitance, to provide good display product
Matter.
Claims (6)
1. a dot structure, including:
Scan line;
One data wire;
One first pixel cell, electrically connects with this first active member including one first active member and one
The first pixel electrode connect, wherein this first active member include a first grid, one first source electrode and
One first drain electrode, this first grid is electrically connected with this scan line, and this first source electrode is electrical with this data wire
Connecting, this first drain electrode is electrically connected with this first pixel electrode;
One second pixel cell, electrically connects with this second active member including one second active member and one
The second pixel electrode connect, wherein this second active member include a second grid, one second source electrode and
One second drain electrode, this second grid is electrically connected with this scan line, this second drain electrode and this second pixel electricity
Pole is electrically connected with, and wherein, this first drain electrode is electrically connected with this second source electrode;And
One holding wire and one shares unit, this share unit include one share active member and one with this point
Enjoy active member be electrically connected with a sharing capacitor, this share active member include one share grid, one
Sharing source electrode and and share drain electrode, wherein this shares grid and the electric connection of this holding wire, this first leakage
Pole, this second source electrode are shared source electrode with this and are electrically connected.
2. dot structure as claimed in claim 1, also includes a connection electrode, the one of this connection electrode
End is connected to this first drain electrode, and the other end of this connection electrode is connected to this second source electrode.
3. dot structure as claimed in claim 2, wherein this connection electrode is not overlapping with this scan line.
4. dot structure as claimed in claim 1, also includes one the 3rd pixel cell, the 3rd pixel
Unit includes one the 3rd active member and one a 3rd pixel electricity being electrically connected with the 3rd active member
Pole, the 3rd active member includes one the 3rd grid, one the 3rd source electrode and one the 3rd drain electrode, the 3rd
Grid is electrically connected with this scan line, and the 3rd drain electrode is electrically connected with the 3rd pixel electrode, wherein,
This first drain electrode, this second source electrode and the 3rd source electrode are electrically connected.
5. dot structure as claimed in claim 1, wherein this first pixel electrode is positioned at this scan line
The opposite sides of this holding wire.
6. dot structure as claimed in claim 1, wherein this first pixel electrode is positioned at this holding wire
The opposite sides of this scan line.
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TW103111265 | 2014-03-26 | ||
TW103111265A TWI516852B (en) | 2014-03-26 | 2014-03-26 | Pixel structure |
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TWI570492B (en) * | 2015-09-18 | 2017-02-11 | 友達光電股份有限公司 | Pixel structure |
TWI600954B (en) * | 2017-03-14 | 2017-10-01 | 友達光電股份有限公司 | Pixel structure |
TWI609220B (en) * | 2017-05-09 | 2017-12-21 | 友達光電股份有限公司 | Pixel array |
TWI628497B (en) * | 2017-08-18 | 2018-07-01 | 友達光電股份有限公司 | Pixel structure |
TWI660224B (en) * | 2018-03-12 | 2019-05-21 | 友達光電股份有限公司 | Pixel array |
CN109324454B (en) * | 2018-09-30 | 2020-10-16 | 惠科股份有限公司 | Display panel and display device |
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TWI386738B (en) * | 2009-11-20 | 2013-02-21 | Au Optronics Corp | Active device array substrate and liquid crystal display panel |
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CN101369082A (en) * | 2008-10-16 | 2009-02-18 | 友达光电股份有限公司 | Pixel array, method for driving pixel array and display panel |
CN102081269A (en) * | 2010-11-16 | 2011-06-01 | 华映视讯(吴江)有限公司 | Transistor array substrate |
CN103323995A (en) * | 2013-06-21 | 2013-09-25 | 深圳市华星光电技术有限公司 | Liquid crystal array substrate and electronic device |
CN103488018A (en) * | 2013-09-25 | 2014-01-01 | 深圳市华星光电技术有限公司 | Liquid crystal display device and display control method thereof |
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TWI516852B (en) | 2016-01-11 |
CN103984173A (en) | 2014-08-13 |
TW201537273A (en) | 2015-10-01 |
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