TW201533851A - 晶圓之加工方法 - Google Patents
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Abstract
本發明之課題在於提供一種可以將在積層於基板表面的功能層上以形成為格子狀的複數條分割預定線所劃分的複數個區域中形成有裝置的晶圓,於不對裝置產生不良影響的情形下分割成一個個裝置的晶圓之加工方法。解決手段為晶圓之加工方法,其含有:切削溝形成步驟,從基板B的背面Bb側將切削刀片12定位於與分割預定線S相對應的區域,留下不到功能層的一部分,而形成切削溝;以及功能層切斷步驟,沿著形成於構成晶圓的功能層之分割預定線照射雷射光線,將功能層燒蝕加工而切斷,且在切削溝形成步驟中,是在晶圓W的外周區域留下未切削部,並沿著分割預定線形成切削溝。
Description
本發明是有關於將在積層於基板表面的功能層上以形成為格子狀的複數條分割預定線所劃分的複數個區域中形成有裝置的晶圓,沿著分割預定線分割的晶圓之加工方法。
近來,為了提升IC、LSI等半導體晶片的處理能力,在矽等的基板表面藉由功能層來形成半導體裝置之形態的半導體晶圓已被實用化,而前述功能層是將由SiOF、BSG(SiOB)等無機物系的膜,或是聚醯亞胺系、聚對二甲苯系等聚合物膜之有機物系的膜所形成之低介電常數絕緣體被膜(Low-k膜)積層而成。上述Low-k膜要以切削刀片來切削是有困難的。亦即,由於Low-k膜如同雲母一般非常地脆,當以切削刀片沿著分割預定線切削時,就會有Low-k膜剝離、該剝離甚至到達電路而對裝置造成致命性的損傷的問題。
為了解除上述問題,於下述專利文獻1中已開示了一種晶圓的分割方法,其為藉由沿著形成於半導體晶圓
的分割預定線照射雷射光線,沿著分割預定線形成雷射加工溝而分斷功能層,將切削刀片定位於此雷射加工溝而使切削刀片與半導體晶圓相對移動,以將半導體晶圓沿著分割預定線切斷。
專利文獻1:日本專利特開第2005-64231號公報
然而,如上述專利文獻1中所記載,藉由沿著形成於半導體晶圓的分割預定線照射雷射光線,以沿著分割預定線形成雷射加工溝而分斷功能層,且將切削刀片定位於此雷射加工溝而將半導體晶圓沿著分割預定線切斷之晶圓的分割方法,有著如下的問題。
(1)就算雷射加工溝的寬度足夠,還是會在切削刀片碰觸到附著於雷射加工溝側面的熔融物時突發性地在裝置的外周處發生缺陷。
(2)在形成雷射加工溝時,若功能層之去除不充分,即會發生切削刀片的偏移或傾斜,而在裝置之功能層上發生剝離。
(3)為了以超出切削刀片寬度的範圍形成雷射加工溝,必須將分割預定線的寬度加寬,會使得可形成於晶圓上的裝置數量減少。
(4)在功能層的表面因為形成有含有SiO2、SiN等的鈍化膜,所以當照射雷射光線時就會穿透鈍化膜而到達功能層內部。其結果,到達功能層內部的雷射光線之能量會失去逸散的空間,而在形成有電路且密度較低的裝置側發生使加工擴大的所謂的過切(undercut)現象。
本發明是有鑒於上述事實而作成的,其主要技術課題在於提供一種晶圓之加工方法,可解決上述問題而把在積層於基板表面的功能層上以形成為格子狀的複數條分割預定線所劃分的複數個區域中形成有裝置的晶圓,分割成一個個的裝置。
為了解決上述課題並達成目的,本發明的晶圓之加工方法是將在積層於基板表面的功能層上以形成為格子狀的複數條分割預定線所劃分的複數個區域中形成有裝置的晶圓,沿著分割預定線分割的晶圓之加工方法,特徵在於,其包含:保護構件貼附步驟,在晶圓的功能層表面貼附保護構件;切削溝形成步驟,將實施過該保護構件貼附步驟的晶圓之該保護構件側保持於工作夾台,從基板的背面側將切削刀片定位於與分割預定線相對應的區域,留下不到功能層的一部分,而形成切削溝;晶圓支撐步驟,在實施過該切削溝形成步驟的晶圓之基板背面貼附切割膠帶,藉由環狀框架來支撐切割膠帶的外周部,並且將該保護構件剝離;以及功能層切斷步驟,沿著構成實施過該晶圓支撐步驟的晶圓之功能層上所形成之分割預定線照射雷射光
線,將功能層燒蝕(ablation)加工而切斷;在該切削溝形成步驟中,是在晶圓的外周區域留下未切削部,並沿著前述分割預定線形成該切削溝。
在本發明的晶圓之加工方法中,由於包含有:切削溝形成步驟,將貼附於晶圓的功能層表面的保護構件側保持於工作夾台,從基板的背面側將切削刀片定位於與分割預定線相對應的區域,留下不到功能層的一部分,而形成切削溝;晶圓支撐步驟,在構成實施過該切削溝形成步驟的晶圓之基板背面貼附切割膠帶,藉由環狀框架來支撐切割膠帶的外周部,並且將該保護構件剝離;以及功能層切斷步驟,沿著實施過該晶圓支撐步驟的晶圓的功能層上所形成之分割預定線照射雷射光線,將功能層燒蝕加工而切斷,因而能獲得以下的作用效果。
(1)藉由功能層切斷步驟的燒蝕加工,即使在形成於功能層的雷射加工溝之側面附著熔融物,因為不是以切削刀片來切削雷射加工溝,故因切削刀片之接觸而突發性地在裝置的外周產生缺陷的問題即可解決。
(2)即使在功能層切斷步驟的燒蝕加工中的功能層之去除不充分,只要使雷射加工溝到達從基板背面側所形成的切削溝,就能將晶圓分割為一個個的裝置,且因為不是以切削刀片來切削雷射加工溝,故在功能層上發生剝離的問題即可解決。
(3)因為不需要形成寬度超出切削刀片寬度的雷
射加工溝,故可將分割預定線的寬度作窄,而能夠增加可在晶圓中形成的裝置數量。
(4)即使在功能層表面形成含SiO2、SiN等的鈍化膜,當在功能層切斷步驟中沿著分割預定線對功能層照射雷射光線時,由於能量會逸散至已從基板背面側形成的切削溝中,故所謂的過切問題即可解決。
10‧‧‧切削裝置
11、21‧‧‧工作夾台
11a、21a‧‧‧保持面
12‧‧‧切削刀片
20‧‧‧雷射加工裝置
22‧‧‧雷射光線照射機構
B‧‧‧基板
Ba‧‧‧表面
Bb‧‧‧背面
CR‧‧‧切削溝
D‧‧‧裝置
F‧‧‧環狀框架
FL‧‧‧功能層
G‧‧‧保護構件
L‧‧‧雷射光線
LR‧‧‧雷射加工溝
S‧‧‧分割預定線
T‧‧‧切割膠帶
UC‧‧‧未切削部
UP‧‧‧切剩部
W‧‧‧晶圓
圖1(a)為表示保護構件貼附步驟前的晶圓以及保護部之立體圖,圖1(b)為保護構件貼附步驟後之立體圖。
圖2為表示切削溝形成步驟的概要之立體圖。
圖3(a)為表示使切削溝形成步驟之切削刀片切入晶圓的狀態之截面圖,圖3(b)為表示切削溝形成步驟之已形成切削溝的狀態之截面圖。
圖4(a)為表示切削溝形成步驟之已使切削刀片切入晶圓的狀態之其他截面圖,圖4(b)為表示切削溝形成步驟之已形成切削溝的狀態之截面圖。
圖5(a)為表示晶圓支撐步驟前的狀態的晶圓等之立體圖,圖5(b)為表示晶圓支撐步驟之已在晶圓上貼附切割膠帶的狀態之截面圖,圖5(c)為表示晶圓支撐步驟之已從晶圓剝離保護構件的狀態之立體圖。
圖6為表示功能層切斷步驟的概要之立體圖。
圖7為表示已施行過實施形態的晶圓之加工方法的晶圓之主要部位的截面圖。
就用於實施本發明之形態(實施形態),參照圖式作更詳細之說明。本發明不因以下的實施形態所記載之內容而受到限制。又,在以下所記載之構成要素中含有本發明所屬技術領域中具有通常知識者可輕易設想得到的或實質上是相同者。此外,以下所記載之構成均可適當地組合。又,在不脫離本發明要旨的範圍內,可進行各種構成之省略、置換或變更。
(實施形態)
根據圖1至圖7說明實施形態的晶圓之加工方法。圖1為表示實施形態的晶圓之加工方法的保護構件貼附步驟的概要之立體圖;圖2為表示實施形態的晶圓之加工方法的切削溝形成步驟的概要之立體圖;圖3為表示實施形態的晶圓之加工方法的切削溝形成步驟的概要之截面圖;圖4為表示實施形態的晶圓之加工方法的切削溝形成步驟的概要之另一個截面圖;圖5為表示實施形態的晶圓之加工方法的晶圓支撐步驟的概要之圖;圖6為表示實施形態的晶圓之加工方法的功能層切斷步驟的概要之立體圖;圖7為表示已施行過實施形態的晶圓之加工方法的晶圓之主要部位的截面圖。
實施形態的晶圓之加工方法(以下,簡稱為加工方法)是對圖1所示的晶圓W進行加工之加工方法,為從於表面Ba積層有功能層FL的晶圓W的基板B之背面Bb側形成切削溝CR(圖4等所示)之後,對功能層FL照射雷射光線L(圖6所示)而分割成一個個的裝置D之方法。再者,作為藉由本
實施形態的加工方法而分割成一個個裝置D之加工對象之晶圓W,如圖1所示,具備有以厚度140μm的矽、藍寶石、鎵等為母材的圓板狀半導體晶圓或光裝置晶圓所構成之基板B,以及在基板B的表面Ba將形成絕緣膜和電路的功能膜積層而成之功能層FL。晶圓W是在積層於基板B的表面Ba之功能層FL上以形成為格子狀的複數條分割預定線S所劃分的複數個區域中形成有IC、LSI等裝置D的晶圓。
在本實施形態中,形成功能層FL的絕緣膜是由低介電常數絕緣體被膜(Low-k膜)構成,並將厚度設定為10μm,其中該低介電常數絕緣體被膜(Low-k膜)是由SiO2膜或SiOF、BSG(SiOB)等無機物系的膜,或是聚醯亞胺系、聚對二甲苯系等聚合物膜的有機物系之膜構成。如圖4所示,是將分割預定線S上的功能層FL之表面形成為稍微低於裝置D上的功能層FL之表面。
實施形態的加工方法是沿著分割預定線S分割晶圓W之加工方法,且包含保護構件貼附步驟、切削溝形成步驟、晶圓支撐步驟,以及功能層切斷步驟。
實施形態的加工方法是,首先,在保護構件貼附步驟中,如圖1(a)所示,使保護構件G與構成晶圓W的功能層FL相向之後,如圖1(b)所示,在功能層FL表面貼附保護構件G以保護裝置D。再者,保護構件G可使用聚乙烯膜等的樹脂片或玻璃基板等具有剛性之硬板(hard plate)。然後,進入到切削溝形成步驟。
在切削溝形成步驟中,是將已實施過保護構件貼
附步驟的晶圓W的保護構件G側載置於切削裝置10(圖2所示)的工作夾台11之保持面11a上。並且,藉由透過未圖示的真空吸引路徑連接至工作夾台11的真空吸引源吸引保持面11a,以透過保護構件G將晶圓W吸引保持於工作夾台11的保持面11a上。並且,可根據切削裝置10之具有紅外線CCD等的圖未示之攝影機構所取得之影像,實行用以進行基板B的背面Bb之與分割預定線S對應之區域和切削刀片12(圖2所示)之位置對齊的型樣匹配等的影像處理,而完成校準。
之後,由基板B的背面Bb側將切削刀片12定位於與分割預定線S對應之區域,將切削刀片12留下不到功能層FL之基板B的一部分,依序形成切削溝CR(圖3及圖4等所示)。在與分割預定線S對應之區域形成切削溝CR時,使切削刀片12相向於比與分割預定線S對應之區域的一端還稍微靠近中央的位置之後,如圖3(a)所示,使切削刀片12不切到功能層FL地切入晶圓W,以產生從功能層FL的表面Ba為例如厚度30μm左右的切剩部UP(圖4(a)及圖4(b)所示)。
並且,使工作夾台11移動,以使切削刀片12朝向分割預定線S的另一端移動。其後,當切削刀片12如圖3(b)所示地位於比與分割預定線S對應之區域的另一端還稍微靠近中央的位置之後,即如圖3(b)中虛線所示地使切削刀片12上昇。如此,於切削溝形成步驟中,可在晶圓W的外周區域留下未切削部UC(圖2及圖3(b)所示),且沿著分割預定線S形成切削溝CR。也就是說,於切削溝形成步驟中,將晶圓W的外周區域中未施行以切削刀片12進行的切削加工
之未切削部UC沿晶圓W的整個周圍形成。當在所有的與分割預定線S對應之區域中均形成切削溝CR時,即可進入到晶圓支撐步驟。
在晶圓支撐步驟中,如圖5(a)所示,是使切割膠帶T的設有粘著層之表面與保持於工作夾台12上的晶圓W的基板B之背面Bb相向,其中該切割膠帶T是以覆蓋開口部的方式將外周部裝設於具備有收納晶圓W的大小的開口部之環狀框架F的背面。並且,使切割膠帶T與晶圓W相對地靠近,以如圖5(b)所示,將切割膠帶T貼附至構成實施過切削溝形成步驟的晶圓W的基板B的背面Bb,而以環狀框架F支撐切割膠帶T之外周部。並且,如圖5(c)所示,將貼附於構成晶圓W的功能層FL表面之保護構件G剝離。然後,進入到功能層切斷步驟。如此,因為在晶圓W的外周區域留下未切削部UC,以提升晶圓W的形成有切削溝CR的區域之剛性,故能夠抑制晶圓支撐步驟中的晶圓W的翹曲或是因搬送時的撞擊所造成的從切削溝CR進行的預期外的破裂。
在功能層切斷步驟中,是在對實施過晶圓支撐步驟的晶圓W照射雷射光線L的雷射加工裝置20的工作夾台21(圖6所示)的多孔狀之保持面21a上,透過切割膠帶T來載置晶圓W。藉由透過圖未示的真空吸引路徑連接至工作夾台21的真空吸引源對保持面21a進行吸引,以如圖6所示,藉工作夾台21的保持面21a透過切割膠帶T吸引保持晶圓W的基板B的背面Bb側。
並且,根據雷射加工裝置20的圖未示之攝影機構
所取得之影像,完成校準。其後,藉由移動機構使工作夾台21與雷射加工裝置20的雷射光線照射機構22相對地移動,並且如圖6所示,沿著構成保持於工作夾台21上之晶圓W的功能層FL上所形成之分割預定線S,將晶圓W具有吸收性之波長(例如355nm)的雷射光線L依序照射在分割預定線S上。然後,如圖7所示,於切削溝形成步驟所殘存的功能層FL以及基板B的切剩部UP中形成到達切削溝CR的雷射加工溝LR。其結果,將在切削溝形成步驟所殘存的功能層FL以及基板B的切剩部UP燒蝕加工而切斷。
在功能層切斷步驟中,因為在功能層FL及基板B的一部分的切剩部UP中所形成的雷射加工溝LR是如圖7所示,比切削溝CR的寬度窄,故可以將分割預定線S的寬度做窄,而能夠使可在晶圓W中形成的裝置D的數量增加。當在所有的分割預定線S都形成雷射加工溝LR時,即可將貼附有晶圓W的切割膠帶T擴張,而沿著分割預定線S將晶圓W分割成一個個裝置D,並從切割膠帶T取下已分割好的一個個裝置D,以搬送至圖未示之托盤或是作為下個步驟的黏晶(die bonding)步驟。
根據實施形態的加工方法,可在切削溝形成步驟後,實施將功能層FL燒蝕加工的功能層切斷步驟。因此,藉由功能層切斷步驟的燒蝕加工,就算在形成於功能層FL的雷射加工溝LR的側面附著有熔融物,因為不是以切削刀片12來切削雷射加工溝LR,故可解決因切削刀片12之接觸而突發性地在裝置D外周產生缺陷的問題。
又,因為在切削溝形成步驟中是從晶圓W的基板B的背面Bb側形成切削溝CR,而在功能層切斷步驟中是將積層於基板B的表面Ba的功能層FL燒蝕加工,所以就算在功能層切斷步驟的燒蝕加工中功能層FL的切斷不充分,只要使雷射加工溝LR到達從基板B的背面Bb側所形成的切削溝CR,就能將晶圓W分割成一個個裝置D。因而,由於不以切削刀片12來切削雷射加工溝LR,故能解決在功能層FL上發生剝離的問題。
此外,因為在切削溝形成步驟中是從晶圓W的基板B的背面Bb側形成切削溝CR,而在功能層切斷步驟中是將積層於基板B的表面Ba的功能層FL燒蝕加工,故不需要形成寬度超出切削刀片12的寬度之雷射加工溝LR。因而,可以將分割預定線S之寬度做窄,而能夠增加可在晶圓W中形成的裝置D的數量。
在切削溝形成步驟中是從晶圓W的基板B的背面Bb側形成切削溝CR,而在功能層切斷步驟中是將積層於基板B的表面Ba的功能層FL燒蝕加工。因此,就算在功能層FL表面形成有含有SiO2、SiN等的鈍化膜,當在功能層切斷步驟中沿著分割預定線S對功能層FL照射雷射光線L時,因為能量會逸散到從基板B的背面Bb側所形成的切削溝CR中,故可解決所謂的過切的問題。
此外,因為在切削溝形成步驟中會在晶圓W的外周區域中留下未切削部UC而形成切削溝CR,所以能夠提升晶圓W的形成有切削溝CR的區域之剛性。因此,於晶圓支
撐步驟中,即可抑制在晶圓W的基板B的背面Bb貼附切割膠帶T且剝離切割膠帶T的操作處理當中,因晶圓W的翹曲或搬送時的撞擊所造成的預期外的從切削溝CR進行的破裂。
再者,本發明不受限於上述實施形態。亦即,可在不脫離本發明要點之範圍內,進行各種變形來實施。
10‧‧‧切削裝置
11‧‧‧工作夾台
11a‧‧‧保持面
12‧‧‧切削刀片
B‧‧‧基板
Bb‧‧‧背面
CR‧‧‧切削溝
D‧‧‧裝置
G‧‧‧保護構件
S‧‧‧分割預定線
UC‧‧‧未切削部
W‧‧‧晶圓
Claims (1)
- 一種晶圓之加工方法,是將積層於基板表面的功能層上以形成格子狀的複數條分割預定線所劃分的複數個區域中形成有裝置的晶圓,沿著分割預定線分割的晶圓之加工方法,特徵在於,其包含:保護構件貼附步驟,在晶圓的功能層表面貼附保護構件;切削溝形成步驟,將實施過該保護構件貼附步驟的晶圓之該保護構件側保持於工作夾台上,從基板的背面側將切削刀片定位於與分割預定線相對應的區域,留下不到功能層的一部分,而形成切削溝;晶圓支撐步驟,在實施過該切削溝形成步驟的晶圓之基板背面貼附切割膠帶,藉由環狀框架來支撐切割膠帶的外周部,並且將該保護構件剝離;以及功能層切斷步驟,沿著形成於實施過該晶圓支撐步驟的晶圓之功能層之分割預定線照射雷射光線,將功能層燒蝕加工而切斷;且在該切削溝形成步驟中,是在晶圓的外周區域留下未切削部,並沿著前述分割預定線形成該切削溝。
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JP2009272421A (ja) * | 2008-05-07 | 2009-11-19 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
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JP6328513B2 (ja) * | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
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- 2015-02-11 KR KR1020150020923A patent/KR102177678B1/ko active IP Right Grant
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US9449878B2 (en) | 2016-09-20 |
JP6325279B2 (ja) | 2018-05-16 |
CN104859062B (zh) | 2018-04-06 |
CN104859062A (zh) | 2015-08-26 |
JP2015159155A (ja) | 2015-09-03 |
TWI652767B (zh) | 2019-03-01 |
US20150243560A1 (en) | 2015-08-27 |
KR20150099428A (ko) | 2015-08-31 |
KR102177678B1 (ko) | 2020-11-11 |
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