TW201529901A - Electrolytic copper foil, flexible circuit board and battery - Google Patents

Electrolytic copper foil, flexible circuit board and battery Download PDF

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TW201529901A
TW201529901A TW103130950A TW103130950A TW201529901A TW 201529901 A TW201529901 A TW 201529901A TW 103130950 A TW103130950 A TW 103130950A TW 103130950 A TW103130950 A TW 103130950A TW 201529901 A TW201529901 A TW 201529901A
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copper foil
electrolytic copper
intensity
circuit board
layer
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TWI649455B (en
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Takahiro Saito
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Furukawa Electric Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/64Carriers or collectors
    • H01M4/66Selection of materials
    • H01M4/661Metal or alloys, e.g. alloy coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Provided is an electrolytic copper foil having flexibility and strength appropriate for a circuit board or a battery. The present invention relates to an electrolytic copper foil used for a circuit board or a battery wherein a peak value of nitrogen (N), sulfur (S), or chlorine (Cl) existing at a position of a depth dp[[mu]m] satisfying 0.3x ≥ dp ≥ 0.7x exists in each strength profile of N, S, or Cl shown in secondary ion mass spectrometry (SIMS) measured in the thickness direction from an S surface or an M surface of the electrolytic copper foil of the thickness x[[mu]m]. Preferably, if the strength (number of counts) refers to I(dp), and the strengths deviated by x/8 from the thickness dp representing the peak value refers to I(dp-x/8) and I(dp+x/8), the electrolytic copper foil satisfies I(dp) ≥ 100, I(dp-x/16) ≥ 1.5 x I(dp-x/8), I(dp+x/16) ≥ 1.5 x I(dp+x/8), I(dp) ≥ 1.5 x I(dp-x/8), I(dp) ≥ 1.5 x I(dp+x/8).

Description

電解銅箔、可撓性電路板及電池 Electrolytic copper foil, flexible circuit board and battery

本發明係有關於一種銅箔,更詳細而言,係有關於一種適用於電路板與電池之用途中,兼具柔軟性與剛性的電解銅箔。 The present invention relates to a copper foil, and more particularly to an electrolytic copper foil which is suitable for use in a circuit board and a battery and which has both flexibility and rigidity.

在各種電子機器類中,為使用電路板來作為基板或連接材料,一般而言,電路板的導電層為使用銅箔。此外,鋰離子電池等電池亦廣泛使用銅箔來作為負極材料。 In various electronic equipments, in order to use a circuit board as a substrate or a connecting material, in general, the conductive layer of the circuit board is copper foil. In addition, copper foil is widely used as a negative electrode material for batteries such as lithium ion batteries.

上述電路板或電池,一般為採用壓延銅箔或電解銅箔。作為電路板用銅箔或電池用銅箔使用之壓延銅箔,為了抑制在製程中所施加熱履歷裡的結晶成長,必須添加金屬等作為必須成分。因此,降低銅箔原本的導電性,此外,亦增加製造成本,有比電解銅箔更差之不良情況產生。因此,傾向於廣泛使用生產性高、且易薄層化的電解銅箔,來作為電路板用銅箔或電池用銅箔。 The above circuit board or battery generally uses a rolled copper foil or an electrolytic copper foil. As a rolled copper foil used for a copper foil for a circuit board or a copper foil for a battery, in order to suppress the crystal growth in the heat history applied during the process, it is necessary to add a metal or the like as an essential component. Therefore, the original conductivity of the copper foil is lowered, and the manufacturing cost is also increased, which is worse than the electrolytic copper foil. Therefore, it is inclined to widely use an electrolytic copper foil which is highly productive and easy to be thinned, and is used as a copper foil for a circuit board or a copper foil for a battery.

於電路板或電池中所採用的電解銅箔中,為了使其具有適於其用途的機械特性,多以添加有有機化合物與氯的電解液來製箔。利用已添加有機化合物與氯的電解液進行製箔,控制結晶中之不純物擷取量,藉此,得以製造具有適用於各用途之柔軟性與剛性的電解銅箔。 In the electrolytic copper foil used in a circuit board or a battery, in order to have mechanical properties suitable for its use, an electrolyte solution containing an organic compound and chlorine is often used to form a foil. The foil is prepared by using an electrolyte solution in which an organic compound and chlorine are added, and the amount of impurities extracted in the crystal is controlled, whereby an electrolytic copper foil having flexibility and rigidity suitable for each use can be produced.

在要求柔軟性之用途中,為需要對於結晶之不純物擷取量少的電解銅箔。因此,採用有如使用特殊有機化合物、或是減少有機化合物或氯的添加量的製造方法,企圖在銅箔中不至於擷取上述有機化合物及其分解物與氯。 In applications requiring flexibility, it is an electrolytic copper foil which requires a small amount of impurities for crystallization. Therefore, it is attempted to use the above-mentioned organic compound and its decomposition product and chlorine in the copper foil by using a manufacturing method such as using a special organic compound or reducing the addition amount of the organic compound or chlorine.

此外,在要求柔軟性之用途的電解銅箔中,其製造方法便是藉由不添加有機化合物與氯而防止結晶中之不純物的擷取,但在該種情況下,由於無法期待有機化合物所能發揮的界面活性作用,因此要求電解液需要相當潔淨至儘可能不含油分等不純物,進而造成有製造成本的提高之不佳情形。 Further, in the electrolytic copper foil which is required for the use of flexibility, the production method is to prevent the extraction of impurities in the crystal by not adding an organic compound and chlorine, but in this case, since the organic compound cannot be expected The interfacial activity that can be exerted requires the electrolyte to be relatively clean to be as free as possible from impurities such as oil, which in turn leads to poor manufacturing costs.

另一方面,在要求剛性的用途中,則需要結晶中之不純物擷取量多的電解銅箔。因此,一般所採用的製造方法,為添加具有特殊官能基、具有強力吸附力的有機化合物,將該種有機化合物及其分解物與氯擷取至銅箔中。 On the other hand, in applications requiring rigidity, an electrolytic copper foil having a large amount of impurities extracted in the crystal is required. Therefore, a manufacturing method generally employed is to add an organic compound having a specific functional group and having a strong adsorption force, and the organic compound and its decomposition product are extracted into a copper foil with chlorine.

作為電路板用途為要求可撓性電路板可承受反覆的彎曲、伸縮之柔軟性,作為電池用途為要求可承受在充放電中反覆的膨脹收縮之剛性。然而,過去的電解銅箔係極難同時滿足後述情況,即:為了使其具有剛性,而增加結晶中之不純物擷取量;以及為了使其具有柔軟性,而減少結晶中之不純物擷取量。 The use of the circuit board is required to be able to withstand the flexibility of bending and stretching of the flexible circuit board, and is required to withstand the expansion and contraction of the battery during the charging and discharging. However, in the past, the electrolytic copper foil was extremely difficult to satisfy the following, that is, to increase the amount of impurities in the crystal in order to make it rigid, and to reduce the amount of impurities in the crystal in order to make it soft. .

專利文獻1(專利4827952號公報)為揭示一種因使用特殊有機化合物而使得不純物含量少的電解銅箔。不過,該發明之電解銅箔雖然柔軟性佳,但剛性卻不佳。 Patent Document 1 (Patent No. 4,287,952) discloses an electrolytic copper foil having a small content of impurities due to the use of a specific organic compound. However, the electrolytic copper foil of the invention has good flexibility but is not rigid.

專利文獻2(專利3850155號公報)為揭示一種因使用潔淨電解液而使得不純物含量少的電解銅箔。不過,該發 明之電解銅箔亦係雖然柔軟性佳,但剛性卻不佳。 Patent Document 2 (Patent 3850155) discloses an electrolytic copper foil having a low content of impurities due to the use of a clean electrolyte. However, the hair Ming's electrolytic copper foil is also soft, but its rigidity is not good.

專利文獻3(特開2009-221592號公報)為揭示一種因使用複數個含氮系有機化合物而使得不純物含量多的電解銅箔。不過,該發明之電解銅箔雖然剛性佳,但柔軟性卻不佳。 Patent Document 3 (JP-A-2009-221592) discloses an electrolytic copper foil having a large content of impurities due to the use of a plurality of nitrogen-containing organic compounds. However, the electrolytic copper foil of the invention has good rigidity but poor flexibility.

專利文獻4(專利5180815號公報)為揭示一種電解銅箔,其特徵為以相異兩位準以上的電流密度所製造。不過,該發明之目的在於析出面之低曲線化,並無法兼顧柔軟性與剛性。 Patent Document 4 (Patent 5180815) discloses an electrolytic copper foil which is produced by a current density of a different two or more. However, the object of the invention is to reduce the curvature of the surface and to achieve both flexibility and rigidity.

【先行技術文獻】 [First technical literature] 【專利文獻】 [Patent Literature]

【專利文獻1】日本專利4827952號公報(特開2010-037654號公報)。 [Patent Document 1] Japanese Patent No. 48279952 (JP-A-2010-037654).

【專利文獻2】日本專利3850155號公報(特開2000-182623號公報)。 [Patent Document 2] Japanese Patent No. 3850155 (JP-A-2000-182623).

【專利文獻3】日本專利特開2009-221592號公報。 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2009-221592.

【專利文獻4】日本專利5180815號公報(WO2007/105635)。 [Patent Document 4] Japanese Patent No. 5180815 (WO2007/105635).

本發明為提供一種電解銅箔,其適用於電路板或電池之用途,且兼顧柔軟性與剛性。 The present invention provides an electrolytic copper foil which is suitable for use in a circuit board or a battery, and which combines flexibility and rigidity.

本發明之電解銅箔,較佳為具有:第1鍍層,不純物含量相對較多且持有剛性;以及,第2鍍層,形成於該第1鍍層兩側,不純物含量相對較少且持有柔軟性。本發明之電解銅箔,係為一種用於電路板或電池的電解銅箔,其中,在由該電解銅箔之S面或M面表面於厚度方向,在以一次離子為銫離子(Cs+)、加速電壓為5kV、濺射區域為200μm×400μm、分析區域為前述濺射區域之中央部9%為條件所測定的SIMS(二次電子質量分析)強度曲線中,當將在由前述表面起算的深度d〔μm〕中之強度[計數值]設為I(d)、電解銅箔的厚度設為x〔μm〕時,在滿足0.3xdp0.7x〔μm〕條件之深度dp〔μm〕中,存在有以二次(檢出)離子(14N63Cu-)所測定之氮(N)、或以二次(檢出)離子(34S-)所測定之硫(S)、抑或是以二次(檢出)離子(35Cl-)所測定之氮(N)、或硫(S)、或是氯(Cl)的峰值。 The electrolytic copper foil of the present invention preferably has a first plating layer having a relatively large impurity content and having rigidity; and a second plating layer formed on both sides of the first plating layer, having a relatively small impurity content and being soft Sex. The electrolytic copper foil of the present invention is an electrolytic copper foil for a circuit board or a battery, wherein the surface of the S or M surface of the electrolytic copper foil is in the thickness direction, and the primary ion is a cesium ion (Cs+). In the SIMS (Secondary Electron Mass Analysis) intensity curve measured by the condition of the acceleration voltage of 5 kV, the sputtering area of 200 μm × 400 μm, and the analysis area being 9% of the central portion of the sputtering region, When the intensity [count value] in the depth d [μm] is I (d) and the thickness of the electrolytic copper foil is x [μm], 0.3x is satisfied. Dp In the depth dp [μm] of the condition of 0.7x [μm], there are nitrogen (N) measured by secondary (detected) ions (14N63Cu-) or secondary (detected) ions (34S-) The measured sulfur (S) or the peak of nitrogen (N), sulfur (S) or chlorine (Cl) measured by secondary (detected) ions (35Cl-).

較佳為,該峰值的強度I(dp)為分別滿足 Preferably, the intensity I(dp) of the peak is satisfied separately

之條件。 The conditions.

本發明之電解銅箔,係為一種用於電路板或電池的電解銅箔,其中,在由該電解銅箔之S面或M面表面於厚度方向所測定的SIMS(二次電子質量分析)強度曲線中,在 由前述表面起算的深度d〔μm〕中,當將強度[計數值]設為I(d)、將電解銅箔的厚度設為x〔μm〕時,在滿足0.3xdp0.7x〔μm〕條件的深度dp〔μm〕中,存在有氮(N)、或硫(S)、或是氯(Cl)的峰值,該該峰值強度I(dp)為分別滿足 The electrolytic copper foil of the present invention is an electrolytic copper foil for a circuit board or a battery, wherein SIMS (secondary electron mass analysis) is measured in the thickness direction from the S surface or the M surface of the electrolytic copper foil. In the intensity curve, when the intensity [count value] is I (d) and the thickness of the electrolytic copper foil is x [μm] in the depth d [μm] calculated from the surface, 0.3x is satisfied. Dp In the depth dp [μm] of the condition of 0.7x [μm], there is a peak of nitrogen (N), sulfur (S), or chlorine (Cl), and the peak intensity I(dp) is satisfied separately.

之條件。 The conditions.

本發明之電路板用電解銅箔可適用於可撓性電路板。 The electrolytic copper foil for a circuit board of the present invention can be applied to a flexible circuit board.

另外,本發明之電池用電解銅箔可適用於電池。 Further, the electrodeposited copper foil for a battery of the present invention can be suitably used for a battery.

因應需要,本發明之電解銅箔可在提升密接性、提升防鏽機能、提升耐藥品性等目的下,實施各種表面處理。 The electrolytic copper foil of the present invention can be subjected to various surface treatments for the purpose of improving adhesion, improving rust prevention performance, and improving chemical resistance, as needed.

藉由本發明,將可提供一種電解銅箔,其具有之三層構造,為在持有不純物含量少之柔軟性的銅層內部,存在持有不純物含量多之剛性的銅層,適用於電路板與電池之用途,且兼顧柔軟性與剛性。 According to the present invention, it is possible to provide an electrolytic copper foil having a three-layer structure in which a copper layer having a high content of impurities is contained inside a copper layer having a softness of less impurity content, and is suitable for a circuit board. And the use of the battery, and both softness and rigidity.

1(1A、1B)‧‧‧不純物含量相對較少且持有柔軟性之銅層 1 (1A, 1B) ‧‧‧ Copper layer with relatively low impurity content and softness

2‧‧‧不純物含量相對較多且持有剛性之銅層 2‧‧‧Tibet with relatively high impurity content and a rigid copper layer

3(3A、3B)‧‧‧第一陽極 3 (3A, 3B) ‧ ‧ first anode

4‧‧‧第二陽極 4‧‧‧Second anode

5‧‧‧陰極 5‧‧‧ cathode

6‧‧‧電解液 6‧‧‧ electrolyte

7‧‧‧電解銅箔 7‧‧‧electrolytic copper foil

圖1所示為說明本發明之三層構造銅箔的模式圖。 Fig. 1 is a schematic view showing the three-layer structure copper foil of the present invention.

圖2所示為筒式製箔裝置的說明圖。 Fig. 2 is an explanatory view showing a cylindrical foil forming apparatus.

圖3所示為在本發明一實施形態之三層構造銅箔中,於厚度方向所測定之SIMS強度曲線的模式圖。 Fig. 3 is a schematic view showing a SIMS intensity curve measured in the thickness direction of the three-layer structure copper foil according to the embodiment of the present invention.

圖4所示為在本發明一實施形態之三層構造銅箔中,由S面測定厚度方向之氯的SIMS強度曲線之一例。 Fig. 4 is a view showing an example of a SIMS intensity curve of chlorine in the thickness direction measured by the S surface in the three-layer structure copper foil according to the embodiment of the present invention.

本發明之電解銅箔係例如如圖1所例示,包含:不純物含量相對較少且持有柔軟性之銅層,亦即,中央鍍層2;以及,形成在層2兩側,不純物含量相對較多且持有剛性之銅層,亦即,外側鍍層1A、1B。 The electrolytic copper foil of the present invention is, for example, as illustrated in Fig. 1, comprising: a copper layer having a relatively low impurity content and possessing flexibility, that is, a central plating layer 2; and being formed on both sides of the layer 2, the impurity content is relatively relatively high. A plurality of rigid copper layers, that is, outer plating layers 1A, 1B.

本發明之電解銅箔係例如藉由如圖2所示之電解製箔裝置而製成箔。電解製箔裝置係由:旋轉之筒狀陰極5(表面為SUS或鈦製);相對於該陰極5為配置成同心圓狀的第一陽極3A、3B(被覆鉛氧化物或被覆貴金屬氧化物之鈦電極);以及可和第一陽極3A、3B獨立進行供電,藉由夾設於第一陽極3A、3B而配置在底部側的第二陽極4(被覆鉛或貴金屬氧化物之鈦電極),所構成。將電解液6供給至該製箔裝置的同時,使電流流至陽極與陰極之間,進而使指定厚度的銅電析至陰極5表面,之後,旋轉滾輪8A、8B,由陰極5表面將銅剝取成箔狀。 The electrolytic copper foil of the present invention is formed into a foil by, for example, an electrolytic foil-making apparatus as shown in Fig. 2. The electrolytic foil-making apparatus is composed of a rotating cylindrical cathode 5 (surface made of SUS or titanium), and a first anode 3A, 3B (coated with lead oxide or coated noble metal oxide) arranged concentrically with respect to the cathode 5 a titanium electrode); and a second anode 4 (a titanium electrode coated with lead or a noble metal oxide) disposed on the bottom side by being interposed on the first anodes 3A, 3B independently of the first anodes 3A, 3B , constituted. While the electrolyte 6 is supplied to the foil-making apparatus, a current is caused to flow between the anode and the cathode, and copper of a predetermined thickness is electrolyzed to the surface of the cathode 5, after which the rollers 8A, 8B are rotated, and copper is plated from the surface of the cathode 5. Stripped into a foil.

此外,將在此種階段的銅箔7稱之為電解銅箔,將與電解銅箔7之電解液6接觸的面稱之為析出面或無光澤面(M面)、且將與筒狀之陰極5接觸的面稱之為光澤面或光滑面(S面)。上述內容雖然是針對採用筒狀陰極5的製箔裝置來說明,但亦具有將陰極形成為板狀,以製箔裝置製造銅箔的例子存在。 Further, the copper foil 7 at this stage is referred to as an electrolytic copper foil, and the surface in contact with the electrolytic solution 6 of the electrolytic copper foil 7 is referred to as a deposition surface or a matte surface (M surface), and will be in a cylindrical shape. The surface in contact with the cathode 5 is referred to as a glossy surface or a smooth surface (S surface). Although the above description has been made on the foil forming apparatus using the cylindrical cathode 5, there is also an example in which the cathode is formed into a plate shape and the copper foil is produced by the foil forming apparatus.

利用圖2所示之裝置製箔成電解銅箔7時,為使用硫酸銅電鍍液作為電解液6。硫酸銅電鍍液的硫酸濃度為20~150g/L(公升),特別以30~120g/L為佳。當硫酸濃度未達20g/L時,因為電流難以在陽極與陰極間流動,故而實際上的操作為相當困難,再者,電鍍的均一性、電附著性也會變差。而當硫酸濃度超過150g/L時,由於銅的溶解度將會下降,因此無法獲得充分的銅濃度,故而實際上的操作為相當困難。此外,還會促使電解製箔裝置等設備的腐蝕。 When the foil is formed into an electrolytic copper foil 7 by the apparatus shown in Fig. 2, a copper sulfate plating solution is used as the electrolytic solution 6. The sulfuric acid concentration of the copper sulfate plating solution is 20 to 150 g/L (liter), and particularly preferably 30 to 120 g/L. When the sulfuric acid concentration is less than 20 g/L, since it is difficult to flow between the anode and the cathode, the actual operation is quite difficult, and the uniformity and electrical adhesion of the plating are also deteriorated. On the other hand, when the sulfuric acid concentration exceeds 150 g/L, since the solubility of copper is lowered, a sufficient copper concentration cannot be obtained, so that the actual operation is quite difficult. In addition, it also causes corrosion of equipment such as electrolytic foil-making devices.

銅濃度為40~150g/L,特別以60~120g/L為佳。當銅濃度未達40g/L時,在電解銅箔的製造中,將難以確保實際上可操作的電流密度。而將銅濃度提升到比150g/L還高時,則需要相當高的溫度,實際上並不可行。 The copper concentration is 40 to 150 g/L, and particularly preferably 60 to 120 g/L. When the copper concentration is less than 40 g/L, it is difficult to ensure a practically operable current density in the production of an electrolytic copper foil. When the copper concentration is raised to be higher than 150 g/L, a relatively high temperature is required, which is practically not feasible.

為使本發明之電解銅箔持有其用途所必須的柔軟性與剛性,在硫酸銅電鍍液中添加有機化合物與氯。添加在硫酸銅電鍍浴中的有機化合物,以下述有機化合物所構成,即:一般而言定義為光亮劑或促進劑的含硫系有機化合物;一般而言定義為均勻劑或平滑劑的含氮系有機化合物;一般而言定義為聚合物或抑制劑的高分子有機化合物。各有機化合物可依照表面平滑性等,利用除了剛性、柔軟性以外而所要求的特性來做適當的組合、使用。 In order to impart the flexibility and rigidity necessary for the use of the electrolytic copper foil of the present invention, an organic compound and chlorine are added to the copper sulfate plating solution. An organic compound added to a copper sulfate electroplating bath, which is composed of an organic compound which is generally defined as a brightener or an accelerator, and is generally defined as a homogeneous agent or a smoothing agent. An organic compound; generally a polymeric organic compound defined as a polymer or inhibitor. Each of the organic compounds can be appropriately combined and used in accordance with the properties required for rigidity and flexibility in accordance with surface smoothness and the like.

具體而言,當要求表面平滑性的情況下,多使用光亮劑、均勻劑、以及聚合物之三種構成,或者是光亮劑、以及均勻劑或聚合物中任一方之兩種構成。此外,尤其在不要求表面平滑 性的情況下,多為採用均勻劑與聚合物之兩種構成,或者是僅由均勻劑或聚合物中任一方的一種構成。 Specifically, when surface smoothness is required, three configurations of a brightener, a homogenizer, and a polymer are often used, or two of a brightener, a homogenizer, and a polymer are used. In addition, especially when surface smoothing is not required In the case of the nature, it is mostly composed of a homogenizing agent and a polymer, or it is composed of only one of a homogenizing agent and a polymer.

添加在硫酸銅電鍍浴中的氯,主要的作用在於做為一種觸媒,用以促進添加劑的吸附。 The chlorine added in the copper sulfate plating bath is mainly used as a catalyst to promote the adsorption of the additive.

添加於硫酸銅電鍍浴之上述有機化合物的濃度並未有特別限定,只要進行適當的調整,使其避免平滑性μ光澤性的不足、或燒焦、異常析出不良等異常現象的產生即可,當重視柔軟性的情況下,則稍微減少有機化合物(不純物含量)的量,當重視剛性的情況下,則稍微增加有機化合物(不純物含量)的量為佳。 The concentration of the organic compound to be added to the copper sulfate plating bath is not particularly limited, and may be appropriately adjusted so as to avoid the occurrence of an abnormality such as smoothness, glossiness, or an abnormal phenomenon such as scorching or abnormal precipitation. When the softness is emphasized, the amount of the organic compound (impurity content) is slightly reduced, and when the rigidity is emphasized, the amount of the organic compound (impurity content) is preferably slightly increased.

氯濃度為0~100ppm,特別以20~50ppm為佳。雖然0ppm亦能獲得本發明之特性,但并無因氯而有促進添加劑之吸附效果,故而必須投入多量的添加劑。此外,若含量高於100ppm時則沒有特別之效果,反而會促進電解製箔裝置等設備的腐蝕,因此不佳。 The chlorine concentration is 0 to 100 ppm, particularly preferably 20 to 50 ppm. Although the characteristics of the present invention can be obtained at 0 ppm, there is no adsorption effect of the additive due to chlorine, so a large amount of additives must be charged. Further, when the content is more than 100 ppm, there is no particular effect, and conversely, corrosion of equipment such as an electrolytic foil-making apparatus is promoted, which is not preferable.

電解浴溫度為25~80℃,特別以30~70℃為佳。當浴溫未達25℃時,在電解銅箔的製造中,將難以確保充分的銅濃度、電流密度,因此實際上並不可行。此外,若溫度高於80℃時,在作業的操作上以及設備上將有其困難性,實際上並不可行。 The temperature of the electrolytic bath is 25 to 80 ° C, particularly preferably 30 to 70 ° C. When the bath temperature is less than 25 ° C, it is difficult to secure a sufficient copper concentration and current density in the production of the electrolytic copper foil, and thus it is practically impossible. In addition, if the temperature is higher than 80 ° C, there will be difficulties in the operation of the work and on the equipment, which is practically impossible.

上述的電解條件中,可從其各自的範圍,在不至於引起銅析出、電鍍燒焦等不良情況的條件下進行適當的調整。 The above-mentioned electrolysis conditions can be appropriately adjusted from the respective ranges without causing problems such as copper deposition or electroplating.

由於剛製造出電解銅箔後之S面的表面粗度會轉印出陰極5的表面粗度,因此在要求表面平滑性的情況下,較 佳為減低陰極5的表面粗度。然而,將陰極5的表面粗度設定成使電解銅箔之S面的表面粗度Rz形成為未達0.1μm的條件,從目前的研磨技術等來判斷時,要達到所要求的平滑度是相當困難,且不適用於量產製造。 Since the surface roughness of the S surface immediately after the production of the electrolytic copper foil transfers the surface roughness of the cathode 5, in the case where surface smoothness is required, It is preferable to reduce the surface roughness of the cathode 5. However, the surface roughness of the cathode 5 is set such that the surface roughness Rz of the S surface of the electrolytic copper foil is less than 0.1 μm, and it is judged from the current polishing technique or the like that the required smoothness is achieved. It is quite difficult and is not suitable for mass production.

此外,S面的粗度可由後工程的粗化處理來做調整,因此,無須冒著銅箔有可能從陰極5剝落的危險,來粗化陰極5的表面粗度,因此,沒必要將所製成箔狀的銅箔S面的粗度Rz形成為5.0μm以上。 Further, the thickness of the S surface can be adjusted by the roughening treatment of the post-engineering, so that it is possible to roughen the surface roughness of the cathode 5 without risking that the copper foil may peel off from the cathode 5, and therefore, it is not necessary to The thickness Rz of the S surface of the foil-formed copper foil is 5.0 μm or more.

電解銅箔之M面的粗度Rz,可藉由各種有機化合物的組合,使得表面具有光澤性等而進行控制。依照用途而適當組合、調整各種有機化合物。 The thickness Rz of the M surface of the electrolytic copper foil can be controlled by a combination of various organic compounds so that the surface has glossiness or the like. Various organic compounds are appropriately combined and adjusted according to the use.

此外,電解銅箔的厚度較佳為3μm~210μm。厚度未達3μm的銅箔,由於處理技術等關係方面製造條件較嚴苛,也較不實際。由目前銅箔的使用狀況來看,厚度的上限為210μm左右。厚度為210μm以上的電解銅箔,將難以將其作為電路板或電池用的銅箔來使用,另外,也喪失了使用電解銅箔的成本優勢。 Further, the thickness of the electrolytic copper foil is preferably from 3 μm to 210 μm. Copper foil with a thickness of less than 3 μm is less practical due to stricter manufacturing conditions in terms of processing technology and the like. From the current state of use of the copper foil, the upper limit of the thickness is about 210 μm. An electrolytic copper foil having a thickness of 210 μm or more is difficult to use as a copper foil for a circuit board or a battery, and the cost advantage of using an electrolytic copper foil is also lost.

在第一陽極3(3A、3B)中,電流密度為20~200A/dm2,特別以30~120A/dm2為佳。當第一陽極3之電流密度未達20A/dm2時,在製造電解銅箔方面將造成生產效率相當的低,因而不切實際。此外,若是提高成高於200A/dm2時,則需要相當高的銅濃度、高溫、高流速,因此會對電解銅箔製造裝置造成較大的負擔,故而不切實際。 In the first anode 3 (3A, 3B), the current density is 20 to 200 A/dm 2 , particularly preferably 30 to 120 A/dm 2 . When the current density of the first anode 3 is less than 20 A/dm 2 , the production efficiency is considerably low in the production of the electrolytic copper foil, and thus it is impractical. Further, if it is increased to more than 200 A/dm 2 , a relatively high copper concentration, high temperature, and high flow rate are required, which imposes a large burden on the electrolytic copper foil manufacturing apparatus, which is impractical.

在本實施形態中,為使用第一陽極3A、3B與第二陽極4之兩種種類的陽極。雖然並未清楚其機構,但在底部之第二陽極4附近已電鍍的層,為比上部之第一陽極3附近已電鍍的層,含有更多的有機化合物、其分解物、以及氯作為不純物的,將其等分析為氮(N)或硫(S)、抑或氯(Cl)。因此,如圖2所示,當將第二陽極4配置成包夾於第一陽極3A、3B時,獲得如圖1中模式性顯示的三層構造之銅箔,即,電鍍於第二陽極4附近之上述不純物量相對較多的銅層,為被夾設在電鍍於第一陽極3附近之上述不純物量相對較少的銅層。圖1為模式性的揭示有電鍍於第一陽極3A附近的層1A、電鍍於第二陽極4附近的中央鍍層2、以及電鍍於第一陽極3B附近的層1B。 In the present embodiment, two types of anodes of the first anodes 3A and 3B and the second anode 4 are used. Although the mechanism is not known, the layer that has been plated near the second anode 4 at the bottom is a layer that has been plated near the first anode 3 of the upper portion, containing more organic compounds, decomposition products thereof, and chlorine as impurities. And analyze them as nitrogen (N) or sulfur (S), or chlorine (Cl). Therefore, as shown in FIG. 2, when the second anode 4 is disposed to be sandwiched between the first anodes 3A, 3B, a copper foil having a three-layer structure as schematically shown in FIG. 1 is obtained, that is, electroplated on the second anode. The copper layer having a relatively large amount of the above-mentioned impurities in the vicinity of 4 is a copper layer which is interposed between the first impurities 3 and has a relatively small amount of the impurities. 1 is a view schematically showing a layer 1A plated in the vicinity of the first anode 3A, a center plating layer 2 plated in the vicinity of the second anode 4, and a layer 1B plated in the vicinity of the first anode 3B.

上述三層構造的銅箔,並非只要形成三層構造即可,中央鍍層2的厚度比例也是相當重要的。當中央鍍層2相對過薄時,則會造成剛性不足,當中央鍍層2相對性過厚時,則會造成柔軟性不足。該種比例,為隨著對於第二陽極4之電流密度與第一陽極3(3A、3B)之電流密度、以及第二陽極4之長度的陽極整體(第一陽極3(3A、3B)長度與第二陽極4長度的合計長度)長度而成比例來決定。 The copper foil of the above three-layer structure is not limited to a three-layer structure, and the thickness ratio of the central plating layer 2 is also important. When the central plating layer 2 is relatively thin, rigidity is insufficient, and when the central plating layer 2 is relatively thick, the flexibility is insufficient. The ratio is the total anode (the length of the first anode 3 (3A, 3B) with the current density of the second anode 4 and the current density of the first anode 3 (3A, 3B) and the length of the second anode 4 It is determined in proportion to the length of the total length of the second anode 4).

在第二陽極4中,電流密度的比例較佳為第一陽極3(3A、3B)的10~80%,其比例特別以30~60%為佳。當第二陽極4之電流密度的比例未達第一陽極3的10%時,為了要確保中央鍍層2的比例,而須大幅增加對於第二陽極4長度之陽極整體長度的比例,就結果而言,由於會造成整體電流密度 的大幅下降、生產效率低落,因此避免該種情況較佳。此外,當比例高於80%時,將會減少前述層1與前述層2的不純物擷取量之差異,進而無法獲得本發明所要求的特性。 In the second anode 4, the ratio of the current density is preferably from 10 to 80% of the first anode 3 (3A, 3B), and the ratio thereof is particularly preferably from 30 to 60%. When the ratio of the current density of the second anode 4 is less than 10% of the first anode 3, in order to ensure the ratio of the central plating layer 2, the ratio of the overall length of the anode to the length of the second anode 4 must be greatly increased, and as a result Said that it will cause the overall current density The sharp drop in production and low productivity have prevented this situation from being better. Further, when the ratio is higher than 80%, the difference in the amount of impurity extraction between the layer 1 and the layer 2 described above is reduced, and the characteristics required by the present invention cannot be obtained.

當將對於第二陽極4長度之陽極整體長度的比例設為L4〔%〕,將第一陽極3(3A、3B)的電流密度設為CD3,將第二陽極4的電流密度設為CD4時,以滿足下述式1所揭示之範圍為佳。 When the ratio of the total length of the anode to the length of the second anode 4 is L4 [%], the current density of the first anode 3 (3A, 3B) is set to CD3, and the current density of the second anode 4 is set to CD4. It is preferable to satisfy the range disclosed by the following formula 1.

在上述式1中,若L4未達5時,由於外部鍍層1A、1B將形成相對性的過厚,因而造成剛性不足,若、L4大於20時,則中央鍍層2將相對過厚,進而造成柔軟性不足。 In the above formula 1, if L4 is less than 5, since the outer plating layers 1A, 1B are formed to be relatively thick, the rigidity is insufficient. If L4 is greater than 20, the central plating layer 2 will be relatively thick, thereby causing Insufficient softness.

本實施形態的銅箔係,在由S面或M面表面測定厚度方向之SIMS強度曲線中,氮(N)、或硫(S)、或是氯(Cl)的強度〔計數值〕峰值,為存在於厚度方向之中央部附近的中央鍍層2。在厚度xμm之銅箔中,中央鍍層2以存在於滿足0.3xdp0.7x〔μm〕的深度dp〔μm〕為佳。 In the copper foil of the present embodiment, the intensity (count value) of nitrogen (N), sulfur (S), or chlorine (Cl) peaks in the SIMS intensity curve measured in the thickness direction from the S surface or the M surface. It is the center plating layer 2 existing in the vicinity of the center part of the thickness direction. In a copper foil of thickness x μm, the central plating layer 2 exists to satisfy 0.3x Dp A depth dp [μm] of 0.7 x [μm] is preferred.

如上所述,為了獲得本發明所要求的特性,中央鍍層2的厚度比例是相當重要的,必須使中央鍍層2的厚度不至於過薄,即使SIMS強度曲線之峰值的山型不至過於尖銳,且必須使中央鍍層2的厚度不至於過厚,即使SIMS強度曲線之峰值的山型不至過於平緩。 As described above, in order to obtain the characteristics required by the present invention, the thickness ratio of the central plating layer 2 is quite important, and it is necessary to make the thickness of the central plating layer 2 not too thin, even if the peak shape of the peak of the SIMS intensity curve is not too sharp, It is necessary to make the thickness of the central plating layer 2 not too thick, even if the peak of the peak of the SIMS intensity curve is not too flat.

具體而言,設定從前述dp間隔一定距離的兩處之強度I作為指標。而所謂的中央鍍層2的厚度不至於過薄,便是指以 (dp±x/16)所表示的位置之強度I作為指標,而所謂的不至於過厚,便是指以(dp±x/8)所表示的位置之強度I作為指標。 Specifically, the intensity I of two places separated by a predetermined distance from the aforementioned dp is set as an index. The thickness of the so-called central coating 2 is not too thin, it means The intensity I of the position indicated by (dp±x/16) is used as an index, and the so-called not too thick means the intensity I of the position indicated by (dp±x/8) as an index.

在本實施形態之SIMS中,上述峰值的強度I(dp),若是滿足下式 In the SIMS of the present embodiment, the intensity I (dp) of the peak is satisfied as follows.

之條件時,則中央鍍層2的厚度將不會過薄,故而為佳,此外,若是滿足 In the case of the condition, the thickness of the central plating layer 2 will not be too thin, so it is preferable, and if it is satisfied

之條件時,則中央鍍層2的厚度將不會過厚,更甚者,由於外部鍍層1A、1B與中央鍍層2之不純物擷取量的差異形成為明確,因此為佳。此外,若是滿足 In the case of the condition, the thickness of the central plating layer 2 is not excessively thick, and moreover, it is preferable that the difference in the amount of impurities extracted from the outer plating layers 1A, 1B and the central plating layer 2 is made clear. In addition, if it is satisfied

之條件時,則外部鍍層1A、1B與中央鍍層2之不純物擷取量的差異將更加明確,故而為佳。 In the case of the conditions, the difference in the amount of impurities extracted from the outer plating layers 1A, 1B and the central plating layer 2 will be more clear, and therefore it is preferable.

在此,於本實施形態之SIMS中,若非一定數值以上的強度〔計數值〕,則難以與雜訊進行區隔,因此,上述峰值的強度I(dp)之〔計數值〕以100以上為佳。若I(dp)為100以上時,則滿足上述式之1.5×I(dp±x/8)為必須要67以上,滿足3.5×I(dp±x/8)為必須要29以上,故而形成足以與雜訊做區隔之較大值。 Here, in the SIMS of the present embodiment, if the intensity (count value) of a certain value or more is not equal to the noise, it is difficult to distinguish the noise. Therefore, the [count value] of the intensity I (dp) of the peak is 100 or more. good. When I(dp) is 100 or more, it is necessary to satisfy the above formula of 1.5 × I (dp ± x / 8) to be 67 or more, and it is necessary to satisfy the requirement that 3.5 × I (dp ± x / 8) is 29 or more. Sufficient to distinguish from noise.

將上述內容,於圖1所例示的本發明一實施形態之三層構造銅箔中,參照圖3所示模式圖之於厚度方向測定的SIMS強度曲線來進行說明。 The above description of the three-layer structure copper foil according to the embodiment of the present invention illustrated in Fig. 1 will be described with reference to the SIMS intensity curve measured in the thickness direction in the schematic view shown in Fig. 3.

首先,氮(N)、或硫(S)、或是氯(Cl)之強度〔計數值〕峰值I(dp)存在於滿足0.3xdp0.7x〔μm〕的深度dp〔μm〕中。接著,由dp〔μm〕而在厚度方向偏移-x/16〔μm〕的位置上所存在的強度I(dp-x/16),形成為同樣是由dp〔μm〕偏移-x/8〔μm〕的位置上所存在的強度I(dp-x/8)之1.5倍以上。同樣的,由dp〔μm〕而在厚度方向偏移+x/16〔μm〕的位置上所存在的強度I(dp+x/16),形成為同樣是由dp〔μm〕偏移+x/8〔μm〕的位置上所存在的強度I(dp+x/8)的1.5倍以上。再者,I(dp)係形成為I(dp-x/8)及I(dp+x/8)的1.5倍以上(更佳為3.5倍以上)。 First, the intensity (count) of the nitrogen (N), or sulfur (S), or chlorine (Cl) peak I (dp) exists in the 0.3x Dp The depth dp [μm] of 0.7x [μm]. Next, the intensity I (dp-x/16) existing at a position shifted by -x/16 [μm] in the thickness direction by dp [μm] is formed to be shifted by dp [μm] -x/ The intensity I (dp-x/8) present at the position of 8 [μm] is 1.5 times or more. Similarly, the intensity I (dp+x/16) existing at a position shifted by +x/16 [μm] in the thickness direction by dp [μm] is formed to be also shifted by dp [μm] + x The intensity I (dp+x/8) present at the position of /8 [μm] is 1.5 times or more. Further, I(dp) is formed to be 1.5 times or more (more preferably 3.5 times or more) of I(dp-x/8) and I(dp+x/8).

在圖1所例示之本發明一實施形態的三層構造銅箔中,於圖4揭示由S面測定厚度方向之氯的SIMS強度曲線之一例。將厚度為16μm之銅箔之滿足4.8dp11.2〔μm〕之由S面起算的深度dp=7.5〔μm〕中,存在有氯(Cl)的強度〔計數值〕為表示3540之峰值的「分析點A」,可理解到該峰值強度I(7.5)為滿足I(7.5)=3540>100 I(6.5)=998>1.5×I(5.5)=1.5×500≒750 I(8.5)=654>1.5×I(9.5)=1.5×303≒455 I(7.5)=3540>3.5×I(5.5)=3.5×500≒1750 I(7.5)=3540>3.5×I(9.5)=3.5×303≒1061 In the three-layer structure copper foil according to the embodiment of the present invention illustrated in Fig. 1, an example of a SIMS intensity curve in which chlorine in the thickness direction is measured from the S surface is disclosed in Fig. 4 . The copper foil with a thickness of 16 μm satisfies 4.8 Dp 11.2 [μm] The depth dp=7.5 [μm] from the S surface, the intensity (count value) of chlorine (Cl) is the "analysis point A" indicating the peak value of 3540, and the peak intensity I can be understood. (7.5) To satisfy I(7.5)=3540>100 I(6.5)=998>1.5×I(5.5)=1.5×500≒750 I(8.5)=654>1.5×I(9.5)=1.5×303≒ 455 I(7.5)=3540>3.5×I(5.5)=3.5×500≒1750 I(7.5)=3540>3.5×I(9.5)=3.5×303≒1061

之條件。 The conditions.

另外,雖然在圖4之SIMS強度曲線中,於表面附近存在有不純物含量較高的區域,但這是檢測到附著在分析處附近之銅箔表面的不純物之實際上無法避免的現象,並不至於影響到銅層。 In addition, although in the SIMS intensity curve of FIG. 4, there is a region having a high impurity content near the surface, this is a phenomenon in which it is practically unavoidable to detect the impurity of the surface of the copper foil attached to the vicinity of the analysis. As for the impact on the copper layer.

在本例中,雖是由S面進行測定,但從M面測定仍有相同的結果。 In this example, although the measurement was performed on the S surface, the same result was obtained from the M surface measurement.

在要求如上述之柔軟性的用途中,需要不純物含量較少的電解銅箔。此外,在要求剛性的用途中,則需要不純物含量較多的電解銅箔。 In applications requiring flexibility as described above, an electrolytic copper foil having a low impurity content is required. Further, in applications requiring rigidity, an electrolytic copper foil having a large amount of impurities is required.

對此,於圖1所例示之本實施形態的三層構造電解銅箔係構成為,存在有:相對具有柔軟性的銅層(外部鍍層1A、1B),其不純物的含量相對較少,位於在彎曲、伸縮時之變形量最大的表層部側;以及相對具有剛性的銅層(中央鍍層2),其不純物的含量相對較多,位在負荷集中的中央部附近。藉由此種結構,將可提供一種電解銅箔,其係兼顧作為電路板用途之在可撓性電路板中的耐反覆彎曲、伸縮之柔軟性,以及作為電池用途之在充放電中的耐反覆膨脹收縮的剛性。 On the other hand, the three-layer structure electrolytic copper foil of the present embodiment illustrated in Fig. 1 is configured to have a relatively flexible copper layer (external plating layers 1A and 1B), and the content of impurities is relatively small. The surface layer portion having the largest amount of deformation at the time of bending and stretching; and the relatively rigid copper layer (the center plating layer 2) have a relatively large content of impurities, and are located near the center portion of the load concentration. With such a configuration, it is possible to provide an electrolytic copper foil which is resistant to repeated bending and stretching in a flexible circuit board as a circuit board, and which is resistant to charge and discharge as a battery. The rigidity of the expansion and contraction is repeated.

如同圖2中所揭示之內容,第二陽極4並非一定要配置在第一陽極3(3A、3B)之整體長度的中央。當M面側的變形形成最大的情況下,亦可將旋轉筒狀之陰極5的表面靠近浸漬電解液6側(在圖2裡為左側)而配置第二陽極4。藉此,不純物含量相對較多的銅層為設置在較中央部處為更靠近S面側,由於M面側之不純物含量相對較少的銅層較厚, 更加提升因應變形之柔軟性。同樣的,當S面側的變形形成最大的情況下,可將第二陽極4設置在靠近旋轉之筒狀陰極5的表面遠離電解液6側。(圖2中右側) As disclosed in FIG. 2, the second anode 4 is not necessarily disposed at the center of the entire length of the first anode 3 (3A, 3B). When the deformation on the M-face side is maximized, the second anode 4 may be disposed on the side of the squeezing electrolyte 6 (the left side in FIG. 2) on the surface of the rotating cylindrical cathode 5. Thereby, the copper layer having a relatively large impurity content is disposed closer to the S surface side at the center portion, and the copper layer having a relatively smaller impurity content on the M surface side is thicker. It also enhances the softness of the deformation. Similarly, when the deformation on the S-face side is maximized, the second anode 4 can be disposed on the surface of the cylindrical cathode 5 close to the rotation away from the electrolyte 6 side. (right side in Figure 2)

如此,層2的位置為隨著第二陽極4的位置,而由中央部移動至S面側或M面側。因此,在本說明書中,為將中央鍍層2的位置定義為中央部附近。 Thus, the position of the layer 2 is moved from the center portion to the S surface side or the M surface side in accordance with the position of the second anode 4. Therefore, in the present specification, the position of the center plating layer 2 is defined as the vicinity of the center portion.

此外,於圖2中雖然揭示三層構造的電解銅箔,然而,當然可製造出四層構造以上的電解銅箔,而使電流密度以更多階段來進行變化。 Further, although an electrolytic copper foil having a three-layer structure is disclosed in FIG. 2, it is of course possible to produce an electrolytic copper foil having a four-layer structure or more, and the current density is changed in more stages.

此外,使用用途為電路板與電池的銅箔,在其製造工程中,雖然實施150~350℃的熱處理,但即使是實施該種熱處理,仍如圖1所例示,依舊維持本發明之電解銅箔的三層構造。更具體而言,即使實施熱處理,依舊維持其構造,即:在表層部附近之外部鍍層1,存在有不純物含量相對較少的銅層;且在中央部附近之中央鍍層2,存在有不純物含量相對較多的銅層。 In addition, the copper foil used for the circuit board and the battery is used, and in the manufacturing process, although the heat treatment is performed at 150 to 350 ° C, even if the heat treatment is performed, the electrolytic copper of the present invention is maintained as illustrated in FIG. 1 . The three-layer construction of the foil. More specifically, even if the heat treatment is performed, the structure is maintained, that is, the outer plating layer 1 in the vicinity of the surface portion has a copper layer having a relatively small impurity content; and the central plating layer 2 in the vicinity of the central portion has an impurity content. Relatively many copper layers.

亦可假設有一種製造方法,其係將與本發明同樣的三層構造,以採用於各層分別相異之設備或電解液、添加劑所構成。不過,在與本發明之單一設備、電解液、添加劑構成相互比較之下,將可容易預料到其製造成本與成品率將大幅惡化,此外,在厚度較薄的製箔過程中,特別在第一層的處理能力方面將可預想到相當的困難,故而不切實際。 It is also assumed that there is a manufacturing method which is the same three-layer structure as that of the present invention, and is constituted by an apparatus, an electrolytic solution, and an additive which are different in each layer. However, in comparison with the single device, the electrolyte, and the additive composition of the present invention, it is easy to predict that the manufacturing cost and the yield thereof will be greatly deteriorated, and in addition, in the thinner foil-forming process, particularly in the first The processing capability of one layer will be expected to be quite difficult, so it is impractical.

以下,將本發明依據三層構造的銅箔,針對其實施例而進行詳細說明,但本發明並非僅限定於此。 Hereinafter, the copper foil according to the three-layer structure of the present invention will be described in detail with respect to the examples, but the present invention is not limited thereto.

(1)製箔 (1) foil production

實施例1~9、比較例1~8 Examples 1 to 9 and Comparative Examples 1 to 8

於表1揭示電解液組成等之製造條件。將表1所示組成之硫酸銅電鍍液通過活性碳濾器而進行潔淨處理,同樣的,添加表1所示之添加劑而形成所指定的濃度。 Table 1 discloses the manufacturing conditions of the electrolyte composition and the like. The copper sulfate plating solution having the composition shown in Table 1 was subjected to a clean treatment by an activated carbon filter, and similarly, the additives shown in Table 1 were added to form a specified concentration.

將圖2所示之第一陽極3與第二陽極4調整成於表2所示的電流密度與陽極長度,同樣的,藉由圖2所示之旋轉筒式製箔裝置,製造出厚度12μm的電解銅箔。 The first anode 3 and the second anode 4 shown in FIG. 2 were adjusted to have a current density and an anode length as shown in Table 2. Similarly, a rotary cylinder type foil forming apparatus shown in FIG. 2 was used to manufacture a thickness of 12 μm. Electrolytic copper foil.

比較例9 Comparative Example 9

比較例9係於專利文獻4中所記載之實施例3的重現實驗。為重現、調製實施例3中所組成的硫酸銅電鍍液。將其添加作為添加劑之MPS-Na、DDAC聚合物(SENKA(株)製unisense:FPA100L)及氯酸,形成為所指定的濃度。電解條件則設定成,第1階段電解之電流密度為74A/dm2、第2階段電解之電流密度為52A/dm2,利用旋轉筒式製箔裝置而製造出厚度12μm的電解銅箔。 Comparative Example 9 is a reproduction experiment of Example 3 described in Patent Document 4. In order to reproduce, the copper sulfate plating solution composed in Example 3 was prepared. MPS-Na, DDAC polymer (unisense: FPA100L, manufactured by SENKA Co., Ltd.) and chloric acid were added as additives, and the concentration was specified. The electrolysis conditions were set such that the current density of the first-stage electrolysis was 74 A/dm 2 and the current density of the second-stage electrolysis was 52 A/dm 2 , and an electrolytic copper foil having a thickness of 12 μm was produced by a rotary-cylinder foil-making apparatus.

MPS:3-巰基-1-丙磺酸 MPS: 3-mercapto-1-propanesulfonic acid

PEG:聚乙二醇(平均分子量:6000) PEG: polyethylene glycol (average molecular weight: 6000)

將各實施例、各比較例的電解銅箔分割成3樣品(樣品1~3)。樣品1使用在SIMS分析,樣品2使用在柔軟性評估實驗,樣品3則使用在剛性評估實驗。 The electrolytic copper foil of each of the examples and the comparative examples was divided into three samples (samples 1 to 3). Sample 1 was used in SIMS analysis, sample 2 was used in the softness evaluation experiment, and sample 3 was used in the stiffness evaluation experiment.

以下詳述各分析、實驗的內容。 The contents of each analysis and experiment are detailed below.

(1)SIMS分析 (1) SIMS analysis

使用樣品1,進行SIMS(二次離子質譜儀(Secondary Ion Mass Spectrometer))分析。 Using Sample 1, SIMS (Secondary Ion Mass Spectrometer) analysis was performed.

分析裝置及分析條件為如下所述。 The analysis device and analysis conditions are as follows.

分析裝置 Analytical device

Physical Electronics社製:「PHI 6650」 Physical Electronics company: "PHI 6650"

分析條件 Analysis condition

一次離子:Cs+(5kV,100nA) Primary ion: Cs+ (5kV, 100nA)

二次(檢出)離子 Secondary (detected) ion

氮(N):14N63Cu- Nitrogen (N): 14N63Cu -

硫(S):34S- Sulfur (S): 34S -

氯(Cl):35Cl- Chlorine (Cl): 35Cl -

濺射面:S面 Sputtering surface: S surface

濺射區域:200μm×400μm Sputtering area: 200μm × 400μm

(閘區域(分析區域):濺射區域之中央部的9%) (gate area (analysis area): 9% of the center of the sputtering area)

濺射時間:直到貫通M面為止 Sputtering time: until the M surface is penetrated

此外,由於厚度x為12μm,因此0.3xdp0.7x〔μm〕係形成 In addition, since the thickness x is 12 μm, 0.3x Dp 0.7x [μm] formation

SIMS分析裡的判斷係為,由S面測定厚度方向的SIMS強度曲線中,在滿足3.6dp8.4〔μm〕的深度dp〔μm〕中,存在有氮(N)、或硫(S)、或是氯(Cl)的峰值,該峰值的強度I(dp)為分別滿足 The judgment in the SIMS analysis is that the SIMS intensity curve in the thickness direction is determined by the S surface, which satisfies 3.6. Dp In the depth dp [μm] of 8.4 [μm], there is a peak of nitrogen (N), sulfur (S), or chlorine (Cl), and the intensity I (dp) of the peak is satisfied.

之條件的樣品,則標記為○(合格),且將分別滿足 The sample of the condition is marked as ○ (qualified) and will be satisfied separately

之條件的樣品標記為◎(優),除此以外的樣品則評估標記為×(不合格)。將其結果記載於表3。 The sample of the condition was marked as ◎ (excellent), and the other samples were evaluated as marked × (failed). The results are shown in Table 3.

(2)柔軟性評估實驗使用樣品2,於氮氛圍氣中,在一般可撓性電路板用途之製造工程中得以負荷的熱處理作業裡,進行相當於300℃×1小時的熱處理之後,裁斷成長度130mm×15mm的實驗片,依據下述條件來進行將銅箔破斷為止的MIT彎曲實驗。在本實驗中,施加不至於使樣品出現撓曲程度的荷重來進行彎曲實驗,藉此進行柔軟性評估。 (2) Softness evaluation test Using sample 2, in a heat treatment operation in which a load is applied in a manufacturing process for general flexible circuit board in a nitrogen atmosphere, the heat treatment corresponding to 300 ° C × 1 hour is performed, and the growth is cut. A test piece of 130 mm × 15 mm was subjected to an MIT bending test until the copper foil was broken according to the following conditions. In this experiment, a bending test was performed by applying a load which did not cause the sample to have a degree of deflection, thereby performing softness evaluation.

彎曲半徑R:0.38mm Bending radius R: 0.38mm

彎曲角度:±135° Bending angle: ±135°

彎曲速度:175次/分 Bending speed: 175 times / min

荷重:10g Load: 10g

將彎曲次數達800次以上仍未破斷的樣品標記為○(合格),特別是次數達1000次以上仍未破斷的樣品標記為◎(優),而不到800次便破斷的樣品則評估標記為×(不合格),將其結果記載於表4。 Samples that have not been broken for more than 800 bends are marked as ○ (qualified), especially samples that have not been broken more than 1000 times are marked as ◎ (excellent), and samples that are broken at 800 times Then, the evaluation mark is × (failed), and the result is shown in Table 4.

(3)剛性評估實驗 (3) Rigid evaluation experiment

使用樣品3,於氮氛圍氣中,進行相當於在一般電池用途之製造工程中得以負荷的熱處理作業之150℃×1小時的熱處理之後,裁斷成長度130mm×15mm的實驗片,依據下述條件來進行將銅箔破斷為止的MIT彎曲實驗。在本實驗中,對樣品施加重負荷來進行彎曲實驗,藉此來進行剛性評估。 Using Sample 3, a heat treatment at 150 ° C for 1 hour, which is equivalent to a heat treatment operation in a general battery application, was carried out in a nitrogen atmosphere, and then cut into test pieces having a length of 130 mm × 15 mm, according to the following conditions. The MIT bending test was performed until the copper foil was broken. In this experiment, a heavy load was applied to the sample to perform a bending test, thereby performing rigidity evaluation.

彎曲半徑R:0.80mm Bending radius R: 0.80mm

彎曲角度:±135° Bending angle: ±135°

彎曲速度:175次/分 Bending speed: 175 times / min

荷重:500g Load: 500g

將彎曲次數達300次以上仍未破斷的樣品標記為○(合格),特別是次數達400次以上仍未破斷的樣品標記為◎(優),而不到300次便破斷的樣品則評估標記為×(不合格),將其結果記載於表4。 Samples that have not been broken by bending more than 300 times are marked as ○ (qualified), especially those samples that have not been broken more than 400 times are marked as ◎ (excellent), and samples that are broken after 300 times Then, the evaluation mark is × (failed), and the result is shown in Table 4.

實施例1~9係可由表3明顯得知,由S面測定厚度方向的SIMS強度曲線中,在滿足3.6dp8.4〔μm〕的深度dp〔μm〕中,氮(N)、或硫(S)、或是氯(Cl)的峰值強度I(dp)為分別滿足 Examples 1 to 9 can be clearly seen from Table 3, and the SIMS intensity curve in the thickness direction is measured by the S surface, which satisfies 3.6. Dp In the depth dp [μm] of 8.4 [μm], the peak intensities I(dp) of nitrogen (N), or sulfur (S), or chlorine (Cl) are respectively satisfied.

之條件。特別是實施例2、3、以及實施例6為分別滿足 The conditions. In particular, Embodiments 2, 3, and 6 are respectively satisfied.

之條件。據此,實施例1~9係構成為,在深度方向中,氮(N)、或硫(S)、或是氯(Cl)之含有量顯示為峰值之層的前述層2,形成為以較佳的厚度比例而存在於中央部附近。其結果,係可容易觀察到實施例1~9形成為一種三層構造的銅箔,其構造為,於中央部附近之不純物含量相對較多之具有剛性的銅層,為以較佳的比例,夾設在位於表層部附近之不純物含量相對較少之具柔軟性的銅層之中。 The conditions. Accordingly, in the first to ninth embodiments, the layer 2 in which the content of nitrogen (N), sulfur (S), or chlorine (Cl) is shown as a peak in the depth direction is formed so as to A preferred thickness ratio exists in the vicinity of the central portion. As a result, it can be easily observed that Examples 1 to 9 are formed into a copper foil having a three-layer structure, and the structure is such that a relatively rigid copper layer having a relatively large impurity content in the vicinity of the center portion is in a preferable ratio. It is sandwiched between soft copper layers with relatively low impurity content near the surface layer.

實施例1~9係可由表4所明顯得知,其等兼具有優越的柔軟性與剛性,特別是在實施例2、3、以及實施例6任一方,均獲得標記為◎(優)的評估結果。 Examples 1 to 9 can be clearly seen from Table 4, and they have superior flexibility and rigidity, and in particular, in any of Examples 2, 3, and 6, all are marked as ◎ (excellent). Evaluation results.

比較例1~8係可由表3所明顯得知,由S面測定厚度方向的SIMS強度曲線中,在滿足3.6dp8.4〔μm〕的深 度dp〔μm〕中,雖然存在有硫(S)、或氯(Cl)的峰值強度I(dp)達I(dp)100的分析點,但是,其分別並未滿足於 Comparative Examples 1 to 8 can be clearly seen from Table 3, and the SIMS intensity curve in the thickness direction is measured by the S surface, which satisfies 3.6. Dp In the depth dp [μm] of 8.4 [μm], although the peak intensity I(dp) of sulfur (S) or chlorine (Cl) is up to I (dp) 100 analysis points, however, they are not satisfied with

之條件。呈現出此種分析結果的比較例1~8係為,並未存在有厚度方向之不純物含量於厚度方向呈現出一定、且明確之峰值的層,也就是並無前述層2的存在,或是意味著並未符合前述層2之較佳的厚度,故可判斷比較例並未形成如實施例之具有適當厚度比例的三層構造。 The conditions. In Comparative Examples 1 to 8 which exhibited such an analysis result, there was no layer in which the impurity content in the thickness direction exhibited a certain and clear peak in the thickness direction, that is, the layer 2 was not present, or This means that the preferred thickness of the layer 2 described above is not met, so that it can be judged that the comparative example does not form a three-layer structure having an appropriate thickness ratio as in the embodiment.

從而,比較例1~8係可由表4所明顯得知,並無法兼顧柔軟性與剛性。 Therefore, Comparative Examples 1 to 8 can be clearly seen from Table 4, and it is impossible to achieve both flexibility and rigidity.

比較例9亦可由表3所明顯得知,由S面測定厚度方向的SIMS強度曲線中,在滿足3.6dp8.4〔μm〕的深度dp〔μm〕中,雖然存在有氯(Cl)的峰值強度I(dp)達I(dp)100的分析點,但是,其分別並未滿足於 Comparative Example 9 can also be clearly seen from Table 3, and the SIMS intensity curve in the thickness direction is measured by the S surface, which satisfies 3.6. Dp In the depth dp [μm] of 8.4 [μm], although there is a peak intensity I(dp) of chlorine (Cl) up to I (dp) 100 analysis points, however, they are not satisfied with

之條件。比較例9所呈現出的分析結果為,I(dp)為高於I(dp-1.5),且低於I(dp+1.5),此結果為意味著厚度方向之不純物含量的分布狀態形成為,S面側為低、M面側為高之 傾斜狀的分布,如同實施例所示,可判斷比較例中銅層並未形成三層構造之狀態。 The conditions. The analysis result shown in Comparative Example 9 is that I(dp) is higher than I(dp-1.5) and lower than I(dp+1.5), and this result means that the distribution state of the impurity content in the thickness direction is formed as , S side is low, M side is high The oblique distribution, as shown in the examples, can be judged that the copper layer does not form a three-layer structure in the comparative example.

在作為比較例9之基礎的專利文獻4中所記載的製造方法裡,有關電流條件方面,僅記載第1階段電解以後降低電流密度,並無如實施本發明製造方法中,僅降低該當於銅箔中央部之處的電流密度的操作之電解條件。據此,可判斷利用專利文獻4中所記載的製造方法,並無法形成於不純物含量相對較少且持有柔軟性之銅層內部存在不純物含量相對較多且持有剛性之銅層的三層構造。 In the production method described in Patent Document 4, which is the basis of Comparative Example 9, regarding the current conditions, only the current density after the first-stage electrolysis is described, and the manufacturing method of the present invention is not reduced, and only the copper is reduced. Electrolytic conditions for the operation of the current density at the center of the foil. According to this, it is possible to determine that the manufacturing method described in Patent Document 4 cannot be formed in a three-layered copper layer having a relatively large impurity content and a relatively large impurity content in the copper layer having a relatively low impurity content and having a relatively high impurity content. structure.

此外,專利文獻4與本發明所要求的特性完全相異,再者,於專利文獻4的本文中並未提及銅箔中有關不純物含量的敘述,因此,僅以假設、類推的行為,係相當難以達到本發明所述之內容。 Further, Patent Document 4 is completely different from the characteristics required by the present invention. Further, in Patent Document 4, the description of the impurity content in the copper foil is not mentioned, and therefore, only hypothetical and analogical behaviors are used. It is quite difficult to achieve the content described in the present invention.

利用本發明,將可提供一種適用於電路板與電池之用途,且兼顧柔軟性與剛性電解銅箔,其所形成的三層構造係構成為,在不純物含量相對較少且持有柔軟性之銅層之內部,存在有不純物含量相對性較多的剛性銅層。 According to the present invention, it is possible to provide an electrolytic copper foil which is suitable for use in a circuit board and a battery, and which has both flexibility and rigidity, and which is formed by a three-layer structure in which the content of impurities is relatively small and the flexibility is maintained. Inside the copper layer, there is a rigid copper layer with a relatively high content of impurities.

此外,本發明係可將原本需要複數個設備、工程之三層構造的特殊電解銅箔,以單一設備、電解液、添加劑構成來製造,也因為可由單一的設備、電解液、添加劑構成來進行製造,因而具有優越的生產性與穩定性。 In addition, the present invention can be made of a special electrolytic copper foil which is originally required to have a plurality of equipments and a three-layer structure, and is composed of a single device, an electrolyte, and an additive, and can also be composed of a single device, an electrolyte, and an additive. Manufactured, thus having superior productivity and stability.

1(1A、1B)‧‧‧不純物含量相對較少且持有柔軟性之銅層 1 (1A, 1B) ‧‧‧ Copper layer with relatively low impurity content and softness

2‧‧‧不純物含量相對較多且持有剛性之銅層 2‧‧‧Tibet with relatively high impurity content and a rigid copper layer

Claims (6)

一種電解銅箔,具有:第1鍍層,不純物含量相對較多且持有剛性;以及第2鍍層,形成於該第1鍍層兩側,不純物含量相對較少且持有柔軟性。 An electrolytic copper foil comprising: a first plating layer having a relatively high impurity content and holding rigidity; and a second plating layer formed on both sides of the first plating layer, having a relatively low impurity content and possessing flexibility. 如申請專利範圍第1項所述之電解銅箔,其中,在由該電解銅箔之S面或M面表面於厚度方向,在以一次離子為銫離子(Cs+)、加速電壓為5kV、濺射區域為200μm×400μm、分析區域為前述濺射區域之中央部9%為條件所測定的SIMS(二次電子質量分析)強度曲線中,在由前述表面起算的深度d〔μm〕中,當將強度[計數值]設為I(d)、電解銅箔的厚度設為x〔μm〕時,在滿足0.3xdp0.7x〔μm〕條件之深度dp〔μm〕中,存在有以二次(檢出)離子(14N63Cu-)所測定之氮(N)、或以二次(檢出)離子(34S-)所測定之硫(S)、抑或是以二次(檢出)離子(35Cl-)所測定之氯(Cl)的峰值。 The electrolytic copper foil according to the first aspect of the invention, wherein the surface of the S or M surface of the electrolytic copper foil is in the thickness direction, and the primary ion is cesium ion (Cs+), the acceleration voltage is 5 kV, and the sputtering is performed. In the SIMS (Secondary Electron Mass Analysis) intensity curve measured by the condition that the emission region is 200 μm × 400 μm and the analysis region is 9% of the central portion of the sputtering region, in the depth d [μm] calculated from the surface, When the intensity [count value] is I (d) and the thickness of the electrolytic copper foil is x [μm], 0.3x is satisfied. Dp In the depth dp [μm] of the condition of 0.7x [μm], there are nitrogen (N) measured by secondary (detected) ions (14N63Cu - ) or secondary (detected) ions (34S - ) The measured sulfur (S) or the peak of chlorine (Cl) measured by the secondary (detected) ion (35Cl - ). 如申請專利範圍第2項所述之電解銅箔,其中,前述峰值的強度I(dp),分別滿足以下之條件: The electrolytic copper foil according to claim 2, wherein the intensity I (dp) of the peaks respectively satisfies the following conditions: 一種電解銅箔,使用在電路板或電池, 其特徵在於:在由該電解銅箔之S面或M面表面於厚度方向所測定的SIMS(二次電子質量分析)強度曲線中,在由前述表面起算的深度d〔μm〕中,當將強度[計數值]設為I(d)、電解銅箔的厚度設為x〔μm〕時,在滿足0.3xdp0.7x〔μm〕條件之深度dp〔μm〕中,存在有氮(N)、或硫(S)、或是氯(Cl)的峰值,該峰值強度I(dp)為分別滿足以下之條件: An electrolytic copper foil used in a circuit board or a battery, characterized in that in the SIMS (Secondary Electron Mass Analysis) intensity curve measured in the thickness direction from the S surface or the M surface of the electrolytic copper foil, In the depth d [μm] of the surface, when the intensity [count value] is I (d) and the thickness of the electrolytic copper foil is x [μm], 0.3x is satisfied. Dp In the depth dp [μm] of the condition of 0.7x [μm], there are peaks of nitrogen (N), sulfur (S), or chlorine (Cl), and the peak intensity I(dp) satisfies the following conditions: 一種可撓性電路板,使用申請專利範圍第1至4項中任一項所述的電解銅箔。 A flexible circuit board using the electrolytic copper foil according to any one of claims 1 to 4. 一種電池,使用申請專利範圍第1至4項中任一項所述的電解銅箔。 A battery using the electrolytic copper foil according to any one of claims 1 to 4.
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