TW201526288A - 半導體發光元件及其製造方法 - Google Patents

半導體發光元件及其製造方法 Download PDF

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Publication number
TW201526288A
TW201526288A TW103131352A TW103131352A TW201526288A TW 201526288 A TW201526288 A TW 201526288A TW 103131352 A TW103131352 A TW 103131352A TW 103131352 A TW103131352 A TW 103131352A TW 201526288 A TW201526288 A TW 201526288A
Authority
TW
Taiwan
Prior art keywords
layer
current
electrode
contact
semiconductor layer
Prior art date
Application number
TW103131352A
Other languages
English (en)
Chinese (zh)
Inventor
井上□博
月原政志
三好晃平
Original Assignee
牛尾電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 牛尾電機股份有限公司 filed Critical 牛尾電機股份有限公司
Publication of TW201526288A publication Critical patent/TW201526288A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

Landscapes

  • Led Devices (AREA)
TW103131352A 2013-12-13 2014-09-11 半導體發光元件及其製造方法 TW201526288A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013258350A JP6094819B2 (ja) 2013-12-13 2013-12-13 半導体発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
TW201526288A true TW201526288A (zh) 2015-07-01

Family

ID=53369544

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131352A TW201526288A (zh) 2013-12-13 2014-09-11 半導體發光元件及其製造方法

Country Status (3)

Country Link
US (1) US9437778B2 (https=)
JP (1) JP6094819B2 (https=)
TW (1) TW201526288A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102320790B1 (ko) 2014-07-25 2021-11-03 서울바이오시스 주식회사 자외선 발광 다이오드 및 그 제조 방법
KR101761835B1 (ko) * 2015-05-22 2017-07-26 서울바이오시스 주식회사 고효율 발광 다이오드
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
KR102554231B1 (ko) * 2016-06-16 2023-07-12 서울바이오시스 주식회사 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
US9893254B1 (en) * 2017-04-20 2018-02-13 High Power Opto. Inc. Structure of high temperature resistant reflecting layer of light-emitting diode
US20190189850A1 (en) * 2017-12-19 2019-06-20 Epistar Corporation Light-emitting device
DE102019135171A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Lotmaterial, Verfahren zur Herstellung eines solchen Lotmaterials und Verwendung eines solchen Lotmaterials zur Anbindung einer Metallschicht an eine Keramikschicht
US20260033048A1 (en) * 2024-07-29 2026-01-29 Creeled, Inc. Reflective structures for light-emitting diode chips and related methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125680A (ja) * 1983-01-06 1984-07-20 Nec Corp 半導体発光素子
JP2006269912A (ja) * 2005-03-25 2006-10-05 Matsushita Electric Ind Co Ltd 発光素子及びその製造方法
WO2009128669A2 (ko) * 2008-04-16 2009-10-22 엘지이노텍주식회사 발광 소자 및 그 제조방법
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
EP2439793B1 (en) * 2010-10-11 2016-03-16 LG Innotek Co., Ltd. Light emitting device and lighting instrument including the same
JP5620846B2 (ja) * 2011-02-16 2014-11-05 スタンレー電気株式会社 半導体発光装置およびその製造方法
EP2528114A3 (en) 2011-05-23 2014-07-09 LG Innotek Co., Ltd. Light emitting device, light emitting device package, and light unit
JP2013197197A (ja) * 2012-03-16 2013-09-30 Toshiba Corp 半導体発光装置及びその製造方法

Also Published As

Publication number Publication date
JP6094819B2 (ja) 2017-03-15
US20150171271A1 (en) 2015-06-18
JP2015115543A (ja) 2015-06-22
US9437778B2 (en) 2016-09-06

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