TW201518829A - 薄膜電晶體基板及其修護方法 - Google Patents
薄膜電晶體基板及其修護方法 Download PDFInfo
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Abstract
一種薄膜電晶體基板包括:一基板;複數條掃描線,設置於該基板上;複數條資料線,與該些掃描線相交叉而設置;一掃描線絕緣層設置於該些掃描線與該些資料線之間;複數個薄膜電晶體,每一薄膜電晶體相對設置於每一掃描線與每一資料線之相互交叉區域;一資料線絕緣層,設置於該掃描線絕緣層之一上表面,並覆蓋該些資料線;以及一共同電極,設置於該資料線絕緣層上,並包括複數個定位通孔,其中該些定位通孔裸露出該資料線絕緣層,並位在該些資料線的正上方。
Description
本發明係有關於一種薄膜電晶體基板及其修護方法,特別是有關於一種平面內切換(In Plane Switching,IPS)廣視角技術及邊緣電場切換(Fringe Field Switching,FFS)技術的薄膜電晶體基板及其修護方法。
液晶顯示面板通常包括一薄膜電晶體基板、一彩色濾光片基板及夾於該二基板之間之液晶層,其藉由分別施加電壓至該二基板,控制其間液晶分子扭轉而實現光之通過或不通過,從而達到顯示之目的。傳統液晶顯示面板之液晶驅動方式為扭轉向列模式,然而其視角範圍比較窄,即,從不同角度觀測畫面時,將觀測到不同之顯示效果。
平面內切換(In Plane Switching,IPS)廣視角技術及邊緣電場切換(Fringe Field Switching,FFS)技術是基於傳統液晶顯示面板之視角狹小等問題而提出之解決方案。舉例,邊緣電場切換技術主要是藉由透明導電層形成所形成之共同電極(Vcom)置於畫素電極上方,從而獲得高效之邊緣電場,提高了開口率,並減少光洩漏。
另外為求共同電極的穩定性,故共同電極為網狀設計(上下左右串連),但若在形成資料線絕緣層或共同電極的製程中,發生微粒(particle)或光阻殘落於資料線上時,會導
致共同電極與資料線電性短路,而產生畫面顯示不良。傳統邊緣電場切換技術設計是無法對上述問題進行修補。
因此,便有需要提供一種薄膜電晶體基板及修護薄膜電晶體基板之共同電極與資料線電性短路的方法。
本發明的目的在於提供一種可修補可視不良點問題的薄膜電晶體基板及其修護方法。
為達成上述目的,本發明提供一種薄膜電晶體基
板,包括:一基板;複數條掃描線,設置於該基板上;複數條資料線,與該些掃描線相交叉而設置;一掃描線絕緣層設置於該些掃描線與該些資料線之間;複數個薄膜電晶體,每一該薄膜電晶體相對設置於每一該掃描線與每一該資料線之相互交叉區域;一資料線絕緣層,設置該掃描線絕緣層之一上表面,並覆蓋該些資料線;以及一共同電極,設置於該資料線絕緣層上,並包括複數個定位通孔,其中該些定位通孔裸露出該資料線絕緣層,並位在該些資料線的正上方。
為達成上述目的,本發明再提供一種薄膜電晶體基板的修護方法,包括下列步驟:提供一薄膜電晶體基板;檢測該薄膜電晶體基板,並發現可視不良點;尋找該共同電極與該資料線發生電性短路的電性短路處;以及切斷電性短路處附近的該共同電極之一部份,其中該些定位通孔用以作為切斷該共同電極的電性短路處之定位點。
本發明的另一目的在於提供一種可避免微粒落於資料線時與共同電極相互電性連接的薄膜電晶體基板。
為達成上述目的,本發明提供一種薄膜電晶體基板,包括:一基板;複數條掃描線,設置於該基板上;複數條資料線,與該些掃描線相交叉而設置;一掃描線絕緣層設置於該些掃描線與該些資料線之間;複數個薄膜電晶體,每一薄膜電晶體相對設置於每一掃描線與每一資料線之相互交叉區域;一資料線絕緣層,設置該掃描線絕緣層之一上表面,並覆蓋該些資料線;一透明導體層,設置於該資料線絕緣層之一上表面;一透明導體保護層,設置於該透明導體層之一上表面;以及一共同電極,設置於該資料線絕緣層之一上表面。
本發明中所述的薄膜電晶體基板可適用於平面內切換(InPlane Switching,IPS)廣視角技術及邊緣電場切換(Fringe Field Switching,FFS)技術,其利用該些定位通孔用以作為切斷該共同電極的電性短路處之定位點,並切斷該電性短路處附近的該共同電極之該部份的上下位置(例如將該共同電極之該部份的上下位置由該定位通孔切割至該條形通孔),使該共同電極之該部份電性絕緣該共同電極之另一部份,以進行修補可視點不良的問題。或者,利用該透明導體層及該透明導體保護層作為緩衝層使用,以避免微粒落於資料線時與共同電極相互電性連接。
為了讓本發明之上述和其他目的、特徵和優點能更明顯,下文將配合所附圖示,作詳細說明如下。
100、200、300‧‧‧薄膜電晶體基板
110‧‧‧基板
120‧‧‧掃描線
130、230、330‧‧‧資料線
140‧‧‧薄膜電晶體
150、250、350‧‧‧資料線絕緣層
160、260、360‧‧‧共同電極
160a、360a‧‧‧共同電極之部份
160b、360b‧‧‧共同電極之另一部份
161、161a‧‧‧定位通孔
162、162a‧‧‧條形通孔
170‧‧‧掃描線絕緣層
180‧‧‧畫素區域
280、380‧‧‧透明導體層
290、390‧‧‧透明導體保護層
910‧‧‧微粒
D1‧‧‧直徑
W1、W2‧‧‧寬度
S100~S104‧‧‧步驟
圖1為本發明之一第一實施例之薄膜電晶體基板之局部平面示意圖。
圖2為圖1所示之薄膜電晶體基板沿剖線V1-V1’方向之剖面示意圖。
圖3為本發明之一種薄膜電晶體基板的修護方法流程圖。
圖4為本發明之一第二實施例之薄膜電晶體基板之局部平面示意圖。
圖5為圖4所示之薄膜電晶體基板沿剖線V2-V2’方向之剖面示意圖。
圖6為本發明之一第三實施例之薄膜電晶體基板之局部平面示意圖。
圖7為圖6所示之薄膜電晶體基板沿剖線V3-V3’方向之剖面示意圖。
圖1為本發明之一第一實施例之薄膜電晶體基板之局部平面示意圖。圖2為圖1所示之薄膜電晶體基板沿剖線V1-V1’方向之剖面示意圖。
該薄膜電晶體基板100包括:一基板110、複數條掃描線120、複數條資料線130、複數個薄膜電晶體140、一資料線絕緣層150、一共同電極160及一掃描線絕緣層170。該些掃描線120設置於該基板110上。該些資料線130與該些掃描線120相交叉而設置。該掃描線絕緣層170設置於該些掃描線120與該些資料線130之間,並位於該基板110與該些資料線130之間。每一薄膜電晶體140相對設置於每
一掃描線120與每一資料線130之相互交叉區域。該資料線絕緣層150設置於該掃描線絕緣層170之一上表面,並覆蓋該些資料線130。該共同電極160設置於該資料線絕緣層150上,並包括複數個定位通孔161,其裸露出該資料線絕緣層150。該些定位通孔161皆須位在該些資料線130的正上方。較佳的,該些定位通孔161之上視外形可為矩形,該矩形之寬度W1大於該些資料線130之寬度W2。或者,該些定位通孔161之上視外形可為圓形,該圓形之直徑D1大於該些資料線130之寬度W2。
每相鄰兩條的該些掃描線120及每相鄰兩條的該些資料線130所圍成的區域定義為一畫素區域180。較佳的,相鄰兩畫素區域180之間具有兩個定位通孔161。共同電極160更包括複數個條形通孔162,該些條形通孔162位於該畫素區域180上方。該共同電極160之材質為透明導體,例如銦錫氧化物(ITO)。
在形成該資料線絕緣層150或共同電極160的製程過程中,可能會發生微粒(particle)910或光阻殘落於資料線130上方。當該共同電極160受到壓力或該資料線絕緣層150發生裂縫時,微粒910將使該共同電極之部份160a與該資料線130發生電性短路。此時,可藉由本發明的薄膜電晶體基板的修護方法,先判斷出微粒910的位置(亦即該共同電極160與該資料線130發生電性短路的電性短路處),然後再將微粒910附近的該共同電極之部份160a進行電性絕緣的動作,例如切斷與該資料線130發生電性短路之共同電極之部份
160a,使該共同電極之部份160a電性絕緣於該共同電極之另一部份160b電性短路。
圖3為本發明之一種薄膜電晶體基板的修護方法流程圖,包括下列步驟:
步驟S100:檢測薄膜電晶體基板,並發現可視不良點。在本步驟中,請再參考圖1及圖2,當薄膜電晶體基板100製造完成後,對該些資料線130發出以一檢測訊號,以發現可視不良點,並預測薄膜電晶體基板100上的該些資料線130與共同電極160發生電性短路。
步驟S102:尋找共同電極與資料線發生電性短路的電性短路處。在本步驟中,當發現該可視不良點時,可利用顯微鏡尋找該共同電極160與該資料線130發生電性短路的電性短路處。
步驟S104:切斷電性短路處附近的共同電極之一部份。在本步驟中,切斷該電性短路處附近的該共同電極之部份160a的上下位置,使該共同電極之部份160a電性絕緣該共同電極之另一部份160b。較佳地,可以利用該些定位通孔161用以作為切斷該共同電極160的電性短路處之定位點。例如,切斷的方法可利用雷射切割的方式,將該共同電極之部份160a的上下位置由該定位通孔161切割至該條形通孔162,使部份之該些條形通孔162a連通部份之該些定位通孔161a,且該共同電極之部份160a電性絕緣該共同電極之另一部份160b。
圖4為本發明之一第二實施例之薄膜電晶體基
板之局部平面示意圖。圖5為圖4所示之薄膜電晶體基板沿剖線V2-V2’方向之剖面示意圖。第二實施例的薄膜電晶體基板200大體上類似於第一實施例的薄膜電晶體基板100,類似的元件標示類似的標號。第二實施例的薄膜電晶體基板200與第一實施例的薄膜電晶體基板100不同的地方在於,該薄膜電晶體基板200更包括一透明導體層280及一透明導體保護層290,且該薄膜電晶體基板200的共同電極260並沒有定位通孔。該透明導體層280設置於該資料線絕緣層250之一上表面。該透明導體保護層290設置於該透明導體層280之一上表面。該共同電極260設置於該資料線絕緣層250之一上表面,使該透明導體層280及該透明導體保護層290位在該資料線絕緣層250及該共同電極260之間。該透明導體層280及該透明導體保護層290可作為緩衝層使用,可避免微粒落於資料線230時與共同電極260相互電性連接。該透明導體層280與該共同電極260可為相同材質,例如銦錫氧化物(ITO)。當該共同電極260受到壓力或該資料線絕緣層250發生裂縫時,因增加該透明導體層280及該透明導體保護層290,使微粒不會使共同電極260與該資料線230發生電性短路,進而較不會產生視點不良的問題。
圖6為本發明之一第三實施例之薄膜電晶體基板之局部平面示意圖。圖7為圖6所示之薄膜電晶體基板沿剖線V3-V3’方向之剖面示意圖。第三實施例的薄膜電晶體基板300大體上類似於第一實施例的薄膜電晶體基板100,類似的元件標示類似的標號。第三實施例的薄膜電晶體基板300
與第一實施例的薄膜電晶體基板100不同的地方在於,第三實施例的薄膜電晶體基板300更包括一透明導體層380及一透明導體保護層390。該透明導體層380設置於該資料線絕緣層350之一上表面,以及該透明導體保護層390設置於該透明導體層380之一上表面,使該透明導體層380及該透明導體保護層390位在該資料線絕緣層350及該共同電極360之間。該透明導體層380及該共同電極360之材質為銦錫氧化物。該透明導體層380及該透明導體保護層390可作為緩衝層使用,可避免微粒910落於資料線330時與共同電極360相互電性連接。若是微粒過大,導致該共同電極360受到壓力或該資料線絕緣層350、透明導體層380及透明導體保護層390發生裂縫時,微粒910將使該共同電極之部份360a與該資料線330發生電性短路。此時,可藉由上述中的薄膜電晶體基板的修護方法,先判斷出微粒910的位置(亦即該共同電極360與該資料線330發生電性短路的電性短路處),然後再將微粒910附近的該共同電極之部份360a進行電性絕緣的動作,例如切斷與該資料線330發生電性短路之共同電極之部份360a,使該共同電極之部份360a電性絕緣於該共同電極360之另一部份360b。
綜上可知,本發明的薄膜電晶體基板可適用於平面內切換(In Plane Switching,IPS)廣視角技術及邊緣電場切換(Fringe Field Switching,FFS)技術,其利用該些定位通孔用以作為切斷該共同電極的電性短路處之定位點,並切斷該電性短路處附近的該共同電極之該部份的上下位置(例如將該
共同電極之該部份的上下位置由該定位通孔切割至該條形通孔),使該共同電極之該部份電性絕緣該共同電極之另一部份,以進行修補可視點不良的問題。或者,利用該透明導體層及該透明導體保護層作為緩衝層使用,以避免微粒落於資料線時與共同電極相互電性連接。
綜上所述,乃僅記載本發明為呈現解決問題所採用的技術手段之實施方式或實施例而已,並非用來限定本發明專利實施之範圍。即凡與本發明專利申請範圍文義相符,或依本發明專利範圍所做的均等變化與修飾,皆為本發明專利範圍所涵蓋。
100‧‧‧薄膜電晶體基板
120‧‧‧掃描線
130‧‧‧資料線
140‧‧‧薄膜電晶體
160‧‧‧共同電極
160a‧‧‧共同電極之部份
160b‧‧‧共同電極之另一部份
161、161a‧‧‧定位通孔
162、162a‧‧‧條形通孔
180‧‧‧畫素區域
910‧‧‧微粒
D1‧‧‧直徑
W1、W2‧‧‧寬度
Claims (10)
- 一種薄膜電晶體基板,包括:一基板;複數條掃描線,設置於該基板上;複數條資料線,與該些掃描線相交叉而設置;一掃描線絕緣層設置於該些掃描線與該些資料線之間;複數個薄膜電晶體,每一該薄膜電晶體相對設置於每一該掃描線與每一該資料線之相互交叉區域;一資料線絕緣層,設置於該掃描線絕緣層之一上表面,並覆蓋該些資料線;以及一共同電極,設置於該資料線絕緣層上,並包括複數個定位通孔,其中該些定位通孔裸露出該資料線絕緣層,並位在該些資料線的正上方。
- 根據申請專利範圍第1項所述之薄膜電晶體基板,其中每相鄰兩條的該些掃描線及每相鄰兩條的該些資料線所圍成的區域定義為一畫素區域,且相鄰兩畫素區域之間具有兩個該定位通孔。
- 根據申請專利範圍第1項所述之薄膜電晶體基板,其中該些定位通孔之上視外形為矩形,且該些定位通孔之寬度大於該些資料線之寬度。
- 根據申請專利範圍第1項所述之薄膜電晶體基板,其中該些定位通孔之上視外形為圓形,且該些定位通孔之直徑大於該些資料線之寬度。
- 根據申請專利範圍第1項所述之薄膜電晶體基板,更包括一透明導體層及一透明導體保護層,該透明導體層設置於該資料線絕緣層之一上表面,以及該透明導體保護層設置於該透明導體層之一上表面,使該透明導體層及該透明導體保護層位在該資料線絕緣層及該共同電極之間。
- 根據申請專利範圍第1或5項所述之薄膜電晶體基板,其中該共同電極更包括複數個條形通孔,該些條形通孔位於該畫素區域上方,部份之該些條形通孔連通部份之該些定位通孔,且該共同電極之一部份電性絕緣於該共同電極之一另一部份。
- 一種薄膜電晶體基板的修護方法,包括下列步驟:提供一薄膜電晶體基板,該薄膜電晶體基板為申請專利範圍第1~5項中之任一項所述之薄膜電晶體基板;檢測該薄膜電晶體基板,並發現可視不良點;尋找該共同電極與該資料線發生電性短路的電性短路處;以及切斷電性短路處附近的該共同電極之一部份,其中該些定位通孔用以作為切斷該共同電極的電性短路處之定位點。
- 根據申請專利範圍第7項所述之薄膜電晶體基板的修護方法,其中該共同電極更包括複數個條形通孔,其位於該畫素區域上方,該薄膜電晶體基板的修護方法更包括利用雷射切割的方式,將該共同電極之該部份的上下位置由該定位通孔切割至該條形通孔。
- 一種薄膜電晶體基板,包括:一基板;複數條掃描線,設置於該基板上;複數條資料線,與該些掃描線相交叉而設置;一掃描線絕緣層設置於該些掃描線與該些資料線之間;複數個薄膜電晶體,每一薄膜電晶體相對設置於每一掃描線與每一資料線之相互交叉區域;一資料線絕緣層,設置該掃描線絕緣層之一上表面,並覆蓋該些資料線;一透明導體層,設置於該資料線絕緣層之一上表面;一透明導體保護層,設置於該透明導體層之一上表面;以及一共同電極,設置於該資料線絕緣層之一上表面。
- 根據申請專利範圍第9項所述之薄膜電晶體基板,其中該透明導體層及該共同電極之材質為銦錫氧化物。
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