TW201515276A - 發光二極體 - Google Patents
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- TW201515276A TW201515276A TW102132690A TW102132690A TW201515276A TW 201515276 A TW201515276 A TW 201515276A TW 102132690 A TW102132690 A TW 102132690A TW 102132690 A TW102132690 A TW 102132690A TW 201515276 A TW201515276 A TW 201515276A
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- 239000005022 packaging material Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 23
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 6
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
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Abstract
一種發光二極體,包括具有電路結構的基板、至少一個發光二極體晶片和封裝材料,發光二極體晶片設置於基板之上且與基板的電路結構電連接,封裝材料設置在所述基板上並包覆發光二極體晶片。所述基板安裝有發光二極體晶片的一面具有若干凹槽,凹槽設置於基板上未安裝發光二極體晶片的區域,凹槽表面具有反光部。
Description
本發明涉及一種發光二極體,特別涉及一種集成封裝的發光二極體。
發光二極體作為一種新的光源,目前已廣泛應用於多種場合。多年來發光二極體的發展方向仍然致力於發光效率的提升上,發光效率的影響因素一般包括選用的發光二極體晶片材料、元件結構的設計、透明度及全反射現象等。
發光二極體中最重要的組件為發光二極體晶片,其決定了發光二極體的性能。現有技術中,通常在發光二極體晶片上包覆封裝材料以進一步保護晶粒的各項特性,現有的封裝材料的折射率大約為1.4-1.5,根據折射定律,例如,當折射率為1.5、入射角大於41度時,光線在空氣與封裝材料的介面發生全反射,再如,當折射率為1.4、入射角大於45度時,光線在空氣與封裝材料的介面發生全反射,這樣導致一部分光容易被限制在封裝材料內而經過多次反射被封裝材料吸收損耗,造成發光二極體的出光效率低。
本發明目的在於提供一種發光二極體以克服上述缺陷。
一種發光二極體,包括具有電路結構的基板、至少一個發光二極體晶片和封裝材料,發光二極體晶片設置於基板之上且與基板的電路結構電連接,封裝材料設置在所述基板上並包覆發光二極體晶片。所述基板安裝有發光二極體晶片的一面具有若干凹槽,凹槽設置於基板上未安裝發光二極體晶片的區域,凹槽表面具有反光部。
本發明所提供的發光二極體,在基板上設置有凹槽,由於凹槽表面設置有反光部,反光部表面的法線與發光二極體晶片光軸形成一夾角以改變“經過封裝材料表面全反射後入射到凹槽斜面的光線”經由反光部的反射作用後的出射角度,從而使得此部分光線能從封裝材料表面折射到封裝材料外部,最終提高了整個發光二極體的光輸出效率。
圖1為本發明實施方式一中的發光二極體的剖面圖。
圖2為圖1中的一種發光二極體的平面圖。
圖3為圖1中的另一種發光二極體的平面圖。
下面將結合附圖,對本發明作進一步的詳細說明。
請參閱圖1,本發明所提供的發光二極體包括具有電路結構的基板110、至少一個發光二極體晶片130和封裝材料120。所述發光二極體晶片130設置於基板110之上並與基板110電連接。所述發光二極體晶片130與基板110的電路結構的電連接方式可採用打線連接方式或覆晶連接方式。所述基板110可選擇PCB基板、陶瓷基板、金屬基板或柔性基板等。所述封裝材料120包覆發光二極體晶片130。所述封裝材料120的折射率為1.4-1.5。所述封裝材料120可包含螢光物質。
所述基板110安裝有發光二極體晶片130的一面具有若干凹槽111,凹槽111設置於基板110上未安裝發光二極體晶片130的區域,凹槽111表面具有反光部200。所述反光部200為金屬材料,該材料可選用Al或Ag等。所述金屬材質的反光部200一方面可以用於光線的反射,另一方面可以作為基板110的電路結構的一部分。
所述凹槽111的截面的輪廓呈“V”形,“V”形的斜邊為所述凹槽111斜面的截面輪廓。所述反光部表面201的法線I-I與發光二極體晶片130的中心軸O-O之間的夾角θ小於90度。所述“V”形的斜邊上與封裝材料表面1201距離較近的一端的端點A與發光二極體晶片130的中心軸O-O之間的距離D大於等於發光二極體晶片130寬度H的二分之一,也即D≥1/2H。在本實施例中,反光部200為上述金屬材料的鍍層,所述反光部表面201與“V”形凹槽111斜面平行。所述發光二極體晶片130發出的光線到達封裝材料表面1201後,一部分在封裝材料表面1201的入射角小於全反射臨界角的光線經過封裝材料表面1201折射出封裝材料120,另一部分在封裝材料表面1201的入射角大於全反射臨界角的光線經過封裝材料表面1201的全反射作用反射回封裝材料120內部,而後經過基板110的反光部200的反射作用、再經過封裝材料表面1201折射出封裝材料120。通過凹槽斜邊的設計,可以有效改變經過反光部表面201反射的光線在封裝材料表面1201的光線的入射角度以減少全反射現象的發生。
請參閱圖2,所述凹槽111設置於發光二極體晶片130與發光二極體晶片130之間,呈現縱橫交錯的排布方式以增加發光二極體的光輸出效率。
本發明所提供的發光二極體通過基板110上的反光部200對光線的反射作用,同時反光部表面201的法線I-I與發光二極體晶片130的光軸O-O具有一夾角θ以改變“經過封裝材料表面1201全反射後入射到反光部表面201的光線”經由反光部表面201的反射作用後的出射角度,從而使得此部分光線能從封裝材料表面1201折射到封裝材料120外部,最終提高了整個發光二極體的光輸出效率。
進一步地,請參閱圖3,所述凹槽111也可設計為圍繞在發光二極體晶片130聚集區域的周圍,發光二極體晶片130聚集區域周圍的凹槽111呈現縱橫交錯的排布方式。
優選的,可以在所述發光二極體晶片130的聚集區域中心設置中心凹槽112,以提高整個發光二極體10的光輸出效率。所述中心凹槽112為一向基板110內部凹陷的圓錐體。
本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。
110‧‧‧基板
111‧‧‧凹槽
112‧‧‧中心凹槽
200‧‧‧反光部
201‧‧‧反光部表面
120‧‧‧封裝材料
1201‧‧‧封裝材料表面
130‧‧‧發光二極體晶片
無
110‧‧‧基板
111‧‧‧凹槽
200‧‧‧反光部
201‧‧‧反光部表面
120‧‧‧封裝材料
1201‧‧‧封裝材料表面
130‧‧‧發光二極體晶片
Claims (10)
- 一種發光二極體,包括具有電路結構的基板、至少一個發光二極體晶片和封裝材料,發光二極體晶片設置於基板之上且與基板的電路結構電連接,封裝材料設置在所述基板上並包覆發光二極體晶片,其改良在於:所述基板安裝有發光二極體晶片的一面具有若干凹槽,凹槽設置於基板上未安裝發光二極體晶片的區域,凹槽表面具有反光部。
- 如申請專利範圍第1項所述的發光二極體,其中,所述基板為PCB基板、陶瓷基板、金屬基板或柔性基板。
- 如申請專利範圍第1項所述的發光二極體,其中,所述反光部為金屬材質。
- 如申請專利範圍第1項所述的發光二極體,其中,所述凹槽的截面的輪廓呈“V”形,“V”形的斜邊為所述凹槽斜面的截面輪廓。
- 如申請專利範圍第4項所述的發光二極體,其中,所述凹槽的反光部表面的法線與發光二極體晶片的中心軸之間的夾角小於90度。
- 如申請專利範圍第4項或第5項所述的發光二極體,其中,所述“V”形的斜邊上與封裝材料表面距離較近的一端的端點與發光二極體晶片的中心軸之間的距離大於等於發光二極體晶片寬度的二分之一。
- 如申請專利範圍第1項所述的發光二極體,其中,所述發光二極體包含若干個發光二極體晶片,所述凹槽設置於發光二極體晶片與發光二極體晶片之間。
- 如申請專利範圍第1項所述的發光二極體,其中,所述發光二極體包含若干個發光二極體晶片,所述凹槽圍繞發光二極體晶片聚集區域的周圍。
- 如申請專利範圍第8項所述的發光二極體,其中,所述發光二極體晶片聚集區域中心包含中心凹槽。
- 如申請專利範圍第1項所述的發光二極體,其中,所述封裝材料中填充有螢光物質。
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CN201310394791.6A CN104425695B (zh) | 2013-09-04 | 2013-09-04 | 发光二极管 |
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TWI712478B (zh) * | 2016-02-26 | 2020-12-11 | 日商三星鑽石工業股份有限公司 | 脆性基板之分斷方法 |
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CN108311812A (zh) | 2014-04-02 | 2018-07-24 | 千住金属工业株式会社 | 软钎料合金和使用其的方法 |
CN112309243B (zh) * | 2020-11-06 | 2022-08-23 | 武汉华星光电技术有限公司 | 背光模组及显示装置 |
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TWI712478B (zh) * | 2016-02-26 | 2020-12-11 | 日商三星鑽石工業股份有限公司 | 脆性基板之分斷方法 |
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US9439280B2 (en) | 2016-09-06 |
US20150062930A1 (en) | 2015-03-05 |
CN104425695B (zh) | 2017-10-03 |
CN104425695A (zh) | 2015-03-18 |
TWI521743B (zh) | 2016-02-11 |
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