131024899 twf.doc/006 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種發光二極體封裝結構，且特別是 ㈣光效耗的覆晶式發光二姆靴结構。 由ΠΙ- p $兀|化5物半導體材料所構成的發光二極 ^ (Llght Emutmg Diode，LED) t„^：(bandgap)131024899 twf.doc/006 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode package structure, and particularly to a (four) light-emitting type of a flip-chip light-emitting diode structure. Llght Emutmg Diode (LED) t„^:(bandgap) consisting of ΠΙ-p $兀|
的發先to件，其可發出之紐從紅外光—制紫外光，而 =蓋所有可見光的波段4年來’隨著高亮度氮化嫁(⑽) 綠光發光二極體的快速發展，全彩發光二極體顯示器、 白光發光二極體及發光二極體交通號誌等得以實用化，而 其他各種發光二極體的應用也更加普及。 發光二極體晶片常見的接合技術有打線（Wh Bonding ’ W/B)及覆晶(Fiip Chip，F/C)等。其中，覆晶接 合技術具有縮小晶片封裝體積及縮短訊號傳輸路徑等優 點，目前已經廣泛應用於發光二極體晶片的封裝。The first part of the hair, which can be emitted from the infrared light - the ultraviolet light, and = cover all the visible light band for 4 years 'With the high-intensity nitriding marry ((10)) green light-emitting diode rapid development, all The color light-emitting diode display, the white light-emitting diode, and the light-emitting diode traffic sign have been put into practical use, and the application of various other light-emitting diodes has become more popular. Common bonding techniques for light-emitting diode chips include Wh Bonding 'W/B' and Fip Chip (F/C). Among them, the flip chip bonding technology has the advantages of reducing the package size of the chip and shortening the signal transmission path, and has been widely used in the packaging of the light emitting diode chip.
圖1纟會示為習知覆晶式發光二極體封褒結構的剖面示 意圖。請參照圖1，習知覆晶式發光二極體封裝結構1〇〇 主要是由子基座102及發光二極體晶片11〇所構成。其中， 子基座102上係配置有銲塾（bonding pad) 104，而發光二 極體晶片110的電極112與電極114上是分別配置有凸塊 (bump) 116。當發光二極體晶片11〇倒覆於子基座1〇2 上時’每一凸塊116皆會與其所對應之銲墊1〇4相連接， 而發光二極體晶片110即係藉由凸塊116而與子基座1〇2 上之銲墊104電性連接。 5 13 1 〇24^89twf.doc/006 請繼續參照圖1，當發光二極體晶片11〇所發出的光 線103射至子基座102時’雖然可藉由銲墊1〇4將其反射， 但由於發光二極體晶片110的出光角限制，部分的光線1〇3 容易因凸塊116的阻擋而無法射出，甚至是反射回發光二 極體晶片110中，因而降低發光二極體封裝結構1〇〇的發 光效率。 【發明内容】 有鑑於此，本發明的目的就是在提供一種覆晶式發光Figure 1A shows a cross-sectional view of a conventional flip-chip light-emitting diode package structure. Referring to FIG. 1 , a conventional flip-chip LED package structure 1 〇〇 is mainly composed of a sub-base 102 and a light-emitting diode wafer 11 . The sub-base 102 is provided with a bonding pad 104, and the electrode 112 and the electrode 114 of the LED chip 110 are respectively provided with bumps 116. When the LED chip 11 is overlaid on the sub-mount 1 〇 2, each bump 116 is connected to its corresponding pad 1 〇 4, and the illuminating diode 110 is The bumps 116 are electrically connected to the pads 104 on the sub-base 1〇2. 5 13 1 〇24^89twf.doc/006 Please continue to refer to FIG. 1, when the light 103 emitted by the LED wafer 11 is emitted to the sub-base 102, although it can be reflected by the pad 1〇4 However, due to the light exit angle limitation of the LED chip 110, part of the light 1〇3 is easily blocked by the bump 116, and is even reflected back into the LED wafer 110, thereby reducing the LED package. The luminous efficiency of the structure 1〇〇. SUMMARY OF THE INVENTION In view of the above, the object of the present invention is to provide a flip-chip illumination
-極體封裝結構’其可提高發光二極體晶片的光取出效率 (light extracting efficiency) ^ ^ ^ # t aBa ^^^ 裝結構的發光效率。 本發明提出一 種覆晶式發光二極體封裝結構 、π — ' I工組判衣、咕僻，巴？^于 土座(sub_m_t)、第一圖案化導電反射膜、第二圖案化導 電反射膜、發光二極體晶片以及多個凸塊。其中，子基座 具有多個凹槽，且第―®案化導電反射織第二圖案化導 =反射膜7C分別配置於子基座上方H圖案化導電反- A polar package structure" which improves the light extraction efficiency of the light-emitting diode wafer ^ ^ ^ # t aBa ^^^ The light-emitting efficiency of the structure. The invention provides a flip-chip type light-emitting diode package structure, π - 'I group judgment clothes, singularity, Pakistan? ^ Earth (sub_m_t), a first patterned conductive reflective film, a second patterned conductive reflective film, a light emitting diode wafer, and a plurality of bumps. Wherein, the sub-base has a plurality of grooves, and the first----------------------------------------------------------------------------
射膜及/或第二圖案化導電膜是填人至少—部分的凹槽 =發光片是配置於子基座上方，且發光二極體 =+具有—電極’以藉由這些電麵與第-®案化導電反 3，及第二圖案化導電反射膜電性連接。另外，這些凸塊 =別配置於電極與第—圖案化導電反射膜 導電反射膜之間。 系化 在本發明的較佳實施例中，這些凹槽的側壁與子 面之間的夾角例如是介於110度至150度之間。 在本^日月的較佳實施例中，這些凹槽例如是呈V型。 6 1310248 '99twf.doc/006 在本發明的較佳實施例中，上述之覆晶式發光二極 封裝結構例如更包括—保護層，配置於子基座與第一圖案 化導電反射膜、第二圖案化導電反射膜之間。 木 在本發明的較佳實施例中，位於上述凸塊之間的部分 凹槽是從這些凸塊其中之一往另一凸塊延伸。 在本發明的較佳實施例中，這些凸塊之材質例如是錫 錯合金。此外，上述子基座之材質例如是氮灿、氣化石朋 或氧化鋅。糾’第—随化導電反鶴與帛二圖案化導 電反射膜的材質例如是鋁、銀或金。 ^本發明之覆晶式發光二極體封裝結構是在子基座上設 叶多個凹槽’並將第—圖案化導電反射膜及/或第二圖案化 導電反射膜填入至少一部份的凹槽内。如此一來，當發光 一極體晶片所發出之光線照射至凹槽之傾斜側壁上的第一 ，案化導電反龍及/或第二随化導電反射膜，會被以適 田的角度反射出，而不會再反射回發光二極體晶片。由此 可知，本發明能夠增加覆晶式發光二極體封裝結構的光取 出效率，進而提高其發光效率。 ▲為讓本發明之上述和其他目的、特徵和優點能更明顯 易ίϊ，下文特舉較佳實施例，並配合所附圖 詳細說 明如下。 【實施方式】 ^圖2緣示為本發明之一較佳實施例中發光二極體封裝 2構的剖面示意圖。請參照圖2，覆晶式發光二極體封裝 結構200主要是由子基座2〇2、第一圖案化導電反射膜 7 '9twf.doc/006 204、第二圖案化導電反射膜206、發光二極體晶片21〇以 及多個凸塊216所構成。其中，子基座202的材質例如是 氮化鋁、氮化硼或氧化鋅，第一圖案化導電反射膜2〇4與 第二圖案化導電反射膜206是配置於子基座202上方。值 得一提的是，此處所述之第一圖案化導電反射膜2〇4與第 二圖案化導電反射膜206例如是一般所謂的銲墊(b〇nding pad) ° 而且，本實施例例如是在形成第一圖案化導電反射膜 204及第二圖案化導電反射膜206之前，先於子基座2〇2 上形成保護層(passivation layer)220，然後再於保護層22〇 上形成第一圖案化導電反射膜204及第二圖案化導電反射 膜206。其中，保護層220的材質例如是石夕。 特別的是，子基座202具有多個凹槽2〇8 (圖2僅繪 示出兩個），且凹槽208的側壁與子基座2〇2之表面2^ 間的夾角α例如是介於11〇度至15〇度之間。其中，這些 凹槽208例如是經由微影及蝕刻製程而形成。另外，凹槽 208的外形除了圖2所示之V型以外，還可以是凹杯狀（如 圖3所示）或半球狀（如圖4所示）。為方便說明，下文 將均以V型的凹槽208為例做說明，但本發明並不限定凹 槽208的外型輪廓。 請繼續參照圖2，第一圖案化導電反射膜2〇4是填入 至少一部伤的凹槽208内。值得注意的是，雖然圖2僅繪 示出弟圖案化導電反射膜204填入部分凹槽208的情 況，但热習此技藝者應該知道，在本發明之其他實施例的 131024暴 99twf.doc/006 覆晶式發光二極體封裝結構中，第二圖案化導電反射膜 206也可以填入部分的凹槽2〇8内，如圖5所示。當然， 第一圖案化導電反射膜2〇4也可以是與第二圖案化導電反 射膜206同時填入某一部份的凹槽208内，如圖6所示。 其中’第一圖案化導電反射膜204與第二圖案化導電反射 膜206的材質例如是鋁、銀、金或其他具有光學反射特性 的導電材料。 請再次參照圖2，發光二極體晶片210是配置於子基 座202上方，且發光二極體晶片21〇具有電極212與電極 214’而電極212與電極214是藉由凸塊216而分別電性連 接於第一圖案化導電反射膜204與第二圖案化導電反射膜 206。其中’電極212例如是η型電極，而電極214例如是 ρ型電極。此外，凸塊216例如是由錫鉛合金所構成。 當發光二極體晶片210所產生之光線203朝子基座 202出射’並射至填於凹槽208内的第一圖案化導電反射 膜204及/或第二圖案化導電反射膜206時，由於凹槽208 的傾斜侧壁能夠增加發光二極體晶片210的出光角度 (emitting angle)，因此可避免光線203被反射回發光二極體 晶片210内，進而提高覆晶式發光二極體封裝結構200的 光取出效率。 圖7繪示為圖2之覆晶式發光二極體封裝結構的立體 分解圖。請參照圖7，由於本實施例之四槽20S為V型凹 槽，因此位於凸塊216之間的凹槽208例如是從一凸塊216 往另一凸塊216延伸。如此一來，當發光二極體晶片210 131024¾ 099twf.doc/006 所產生之光線203照射至凹槽208之後，即可藉由填入凹 槽208内的第一圖案化導電反射膜2〇4及/或第二圖案化導 電反射膜206將光線203反射至未配置有凸塊216之處， 而使光線203順利出射至覆晶式發光二極體封裝結構2〇〇 外0 當然’本發明之子基座202的凹槽208還可以有其他 的型態，熟習此技藝者可自行依據實際製程中凸塊的配置 位置來決定子基座之凹槽的分佈型態及外形，以使發光二 極體晶片所產生之光線能夠避開凸塊而出射。舉例來說， 在本發明的其他實施例中，還可以是將兩凸塊216之間的 凹槽208 s又a十為圓錐狀，如圖§所示。如此一來，填入凹 槽208内的第一圖案化導電反射膜2〇4及/或第二圖案化導 電反射膜206亦可將部分光線反射至未配置有凸塊216之 處，以提高覆晶式發光二極體封裝結構的整體發光效率。 圖9繪示為圖2之發光二極體晶片的俯視示意圖。圖 1〇則繪示為本發明另一實施例中發光二極體晶片的俯視 示意圖。請參照圖9，需要注意的是，雖然圖2之發光二 極體晶片210在電極212與電極214上是分別形成有單一 凸塊216，但熟習此技藝者應該知道，如圖1〇所示，在大 尺寸之發光二極體晶片的覆晶封裝製程中，其是分別在電 極212與電極214上形成多個凸塊210，以增加發光二極 體晶片310與子基座的接觸面積，而本發明之覆晶式發光 一極體封t結構亦適用於此種型態的發光二極體晶片。實 際上，本發明之覆晶式發光二極體封裝結構中的發光二極 131024¾ 099twf.doc/006 體晶片並不限定於上述實施例所揭露之型態。 綜上所述’本發明之覆晶式發光二極體封裝結構是在 子基座上設計多個凹槽，並將第一圖案化導電反射膜及/ 或第一圖案化導電反射膜填入至少一部份的凹槽内。當發 光二極體晶片所發出之光線朝向子基座出射而照射至位於 凹槽之侧壁上的第一圖案化導電反射膜及/或第二圖案化 導電反射膜時，由於凹槽的侧壁有一傾斜角度，而侧壁的 傾斜度能夠增加此光線的出光角度，因此能夠避免光線反 • 射回發光二極體晶片令。換言之，本發明能夠增加覆晶式 發光二極體封裝結構的光取出效率，進而提高其發光效率。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限J本發明，任何熟習此技藝者，在不脫離本發明之精神 ^範圍内’當可作些許之更動與潤飾，因此本發明之保護 範圍當視_之申請專利範圍所界定者為準。 【圖式簡單說明】 立 馬為知覆晶式發光二極體封裝結構的剖面示 思圖。 料m不為本發明之—佳實施例中覆晶式發光二極 體封裝結構的剖面示意圖。 井-f4分财示本發明之不同實施例中覆晶式發 之子基座的剖面示意圖。 光二極二】二，不同實施例中覆晶式發 圖7緣示Am」〇 f不忍圖。 馬圖2之覆晶式發光二極體封裝結構的立體 »9twf.doc/006 分解圖。 圖8繪示為本發明之另一實施例中覆晶式發光二極體 封裝結構的立體分解圖。 圖9繪示為圖2之發光二極體晶片的俯視示意圖。 圖10繪示為本發明之另一實施例中發光二極體晶片 的俯視示意圖。 【主要元件符號說明】 100、200 :覆晶式發光二極體封裝結構 102、 202 :子基座 103、 203 :光線 104 :銲墊 110、210 :發光二極體晶片 112、114、212、214 電極 116、216 ·•凸塊 204 :第一圖案化導電反射膜 206 :第二圖案化導電反射膜 208 :凹槽 α :角度 12The film and/or the second patterned conductive film are filled with at least a portion of the groove = the light emitting sheet is disposed above the submount, and the light emitting diode = + has an electrode to be used by the electric surface - The case of the conductive anti-3, and the second patterned conductive reflective film are electrically connected. In addition, these bumps are not disposed between the electrodes and the conductive reflective film of the first patterned conductive reflective film. Systemization In a preferred embodiment of the invention, the angle between the sidewalls of the grooves and the sub-surface is, for example, between 110 and 150 degrees. In the preferred embodiment of the present day, the grooves are, for example, V-shaped. In a preferred embodiment of the present invention, the flip-chip light emitting diode package structure further includes a protective layer disposed on the submount and the first patterned conductive reflective film, Two patterned conductive reflective films. In a preferred embodiment of the invention, a portion of the recess between the projections extends from one of the projections to the other. In a preferred embodiment of the invention, the material of the bumps is, for example, a tin-alloy. Further, the material of the sub-base is, for example, nitrogen, gas, or zinc oxide. The material of the electrically conductive reflective film is, for example, aluminum, silver or gold. The flip-chip LED package structure of the present invention is characterized in that a plurality of grooves are provided on the sub-base and the first patterned conductive reflective film and/or the second patterned conductive reflective film are filled in at least one portion. Within the groove. In this way, when the light emitted by the light-emitting diode wafer is irradiated onto the inclined sidewall of the groove, the first conductive conductive anti-dragon and/or the second chemically-conductive conductive film are reflected at an appropriate angle. Out, and will not reflect back to the LED chip. From this, it is understood that the present invention can increase the light extraction efficiency of the flip-chip light-emitting diode package structure and further improve the light-emitting efficiency. The above and other objects, features, and advantages of the present invention will become more apparent from the <RTIgt; [Embodiment] FIG. 2 is a schematic cross-sectional view showing a structure of a light emitting diode package according to a preferred embodiment of the present invention. Referring to FIG. 2, the flip-chip LED package structure 200 is mainly composed of a sub-mount 2, a first patterned conductive reflective film 7 '9twf.doc/006 204, a second patterned conductive reflective film 206, and a light-emitting layer. The diode chip 21A and the plurality of bumps 216 are formed. The material of the sub-mount 202 is, for example, aluminum nitride, boron nitride or zinc oxide, and the first patterned conductive reflective film 2〇4 and the second patterned conductive reflective film 206 are disposed above the sub-mount 202. It is to be noted that the first patterned conductive reflective film 2〇4 and the second patterned conductive reflective film 206 described herein are, for example, generally so-called solder pads. Moreover, this embodiment is, for example, Before forming the first patterned conductive reflective film 204 and the second patterned conductive reflective film 206, a passivation layer 220 is formed on the submount 2〇2, and then a protective layer 22 is formed on the protective layer 22〇. A patterned conductive reflective film 204 and a second patterned conductive reflective film 206 are patterned. The material of the protective layer 220 is, for example, Shi Xi. In particular, the sub-mount 202 has a plurality of recesses 2〇8 (only two are shown in FIG. 2), and the angle α between the side wall of the recess 208 and the surface 2 of the sub-base 2〇2 is, for example, Between 11 degrees and 15 degrees. Among them, these grooves 208 are formed, for example, by a lithography and etching process. Further, the outer shape of the groove 208 may be a concave cup shape (as shown in Fig. 3) or a hemispherical shape (shown in Fig. 4) in addition to the V shape shown in Fig. 2. For convenience of explanation, the V-shaped groove 208 will be exemplified below, but the present invention does not limit the outline of the groove 208. Referring to FIG. 2, the first patterned conductive reflective film 2〇4 is filled in at least one of the damaged grooves 208. It should be noted that although FIG. 2 only shows the case where the patterned conductive reflective film 204 is filled in a portion of the recess 208, it will be appreciated by those skilled in the art that the 131024 burst 99twf.doc in other embodiments of the present invention. In the flip-chip LED package structure, the second patterned conductive reflective film 206 may also be filled in a portion of the recess 2〇8, as shown in FIG. Of course, the first patterned conductive reflective film 2〇4 may also be filled into a certain portion of the recess 208 at the same time as the second patterned conductive reflective film 206, as shown in FIG. The material of the first patterned conductive reflective film 204 and the second patterned conductive reflective film 206 is, for example, aluminum, silver, gold or other conductive material having optical reflection characteristics. Referring again to FIG. 2, the LED wafer 210 is disposed above the sub-mount 202, and the LED chip 21 has electrodes 212 and 214', and the electrodes 212 and 214 are respectively by the bumps 216. The first patterned conductive reflective film 204 and the second patterned conductive reflective film 206 are electrically connected. Wherein the electrode 212 is, for example, an n-type electrode, and the electrode 214 is, for example, a p-type electrode. Further, the bump 216 is made of, for example, a tin-lead alloy. When the light 203 generated by the LED chip 210 is emitted toward the sub-mount 202 and is incident on the first patterned conductive reflective film 204 and/or the second patterned conductive reflective film 206 filled in the recess 208, The inclined sidewall of the recess 208 can increase the emitting angle of the LED wafer 210, thereby preventing the light 203 from being reflected back into the LED wafer 210, thereby improving the flip-chip LED package structure. 200 light extraction efficiency. FIG. 7 is a perspective exploded view of the flip-chip LED package structure of FIG. 2. FIG. Referring to FIG. 7, since the four slots 20S of the embodiment are V-shaped recesses, the recesses 208 between the bumps 216 extend from one bump 216 to the other. In this way, after the light 203 generated by the LED chip 210 1310243⁄4 099 twf.doc/006 is irradiated to the recess 208, the first patterned conductive reflective film 2 〇 4 can be filled in the recess 208. And/or the second patterned conductive reflective film 206 reflects the light 203 to a place where the bump 216 is not disposed, and the light 203 is smoothly emitted to the flip-chip light-emitting diode package structure. The groove 208 of the sub-base 202 can have other types. The skilled person can determine the distribution pattern and shape of the groove of the sub-base according to the position of the bump in the actual process, so that the light-emitting two can be made. The light generated by the polar body wafer can escape from the bumps. For example, in other embodiments of the present invention, the grooves 208 s and a ten between the two bumps 216 may be conical, as shown in §. As a result, the first patterned conductive reflective film 2〇4 and/or the second patterned conductive reflective film 206 filled in the recess 208 can also reflect part of the light to the portion where the bump 216 is not disposed, so as to improve The overall luminous efficiency of the flip-chip LED package structure. 9 is a top plan view of the light emitting diode chip of FIG. 2. 1 is a top plan view of a light emitting diode chip according to another embodiment of the present invention. Referring to FIG. 9, it should be noted that although the LED array 210 of FIG. 2 is formed with a single bump 216 on the electrode 212 and the electrode 214, respectively, those skilled in the art should know that, as shown in FIG. In a flip chip packaging process of a large-sized LED chip, a plurality of bumps 210 are formed on the electrode 212 and the electrode 214 to increase the contact area between the LED substrate 310 and the sub-mount. The flip-chip light-emitting diode package structure of the present invention is also applicable to such a type of light-emitting diode chip. In fact, the light-emitting diode 1310243⁄4 099 twf.doc/006 body wafer in the flip-chip light-emitting diode package structure of the present invention is not limited to the type disclosed in the above embodiments. In summary, the flip-chip light-emitting diode package structure of the present invention is configured to design a plurality of grooves on the sub-mount and fill the first patterned conductive reflective film and/or the first patterned conductive reflective film. At least a portion of the groove. When the light emitted by the LED wafer is emitted toward the sub-base and irradiated to the first patterned conductive reflective film and/or the second patterned conductive reflective film located on the sidewall of the recess, due to the side of the recess The wall has an angle of inclination, and the inclination of the side wall increases the angle of light exiting the light, thereby preventing the light from being reflected back to the light-emitting diode chip. In other words, the present invention can increase the light extraction efficiency of the flip-chip light-emitting diode package structure, thereby improving the light-emitting efficiency. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and it is intended that the invention may be modified and modified without departing from the spirit of the invention. The scope of protection of the invention is subject to the definition of the scope of the patent application. [Simple description of the diagram] A cross-sectional view of the flip-chip light-emitting diode package structure is immediately established. The material m is not a schematic cross-sectional view of the flip-chip light-emitting diode package structure of the preferred embodiment of the present invention. Well-f4 is a cross-sectional view of a sub-base of a flip-chip type in various embodiments of the present invention. Light dipole 2] Second, in different embodiments, the flip-chip type of Figure 7 shows Am "〇 f can not bear the picture. The stereo of the flip-chip LED package of Matu 2 »9twf.doc/006 exploded view. FIG. 8 is a perspective exploded view of a flip-chip light emitting diode package structure according to another embodiment of the present invention. 9 is a top plan view of the light emitting diode chip of FIG. 2. FIG. 10 is a top plan view of a light emitting diode wafer according to another embodiment of the present invention. [Description of main component symbols] 100, 200: flip-chip light-emitting diode package structure 102, 202: sub-base 103, 203: light 104: pads 110, 210: light-emitting diode chips 112, 114, 212, 214 electrodes 116, 216 · • bumps 204 : first patterned conductive reflective film 206 : second patterned conductive reflective film 208 : groove α : angle 12