WO2023036138A1 - Light-emitting device and preparation method therefor - Google Patents

Abstract

A light-emitting device (100, 200) and a preparation method therefor. The light-emitting device (100, 200) comprises a conductive layer (310) disposed on a substrate (110); a first protruding block seat (321) and a second protruding block seat (322) which are disposed on the conductive layer (310) and separated from each other; a first electrode layer (330) disposed on the first protruding block seat (321), the conductive layer (310), and the second protruding block seat (322), the first electrode layer (330) comprising a side wall (3212) located on the first protruding block seat (321), a side wall (3222) located on the second protruding block seat (322), and a first recess (331) located between the first protruding block seat (321) and the second protruding block seat (322); a first protruding block (341) disposed on the first protruding block seat (321) and a part of the first recess (331); a second protruding block (342) disposed on the second protruding block seat (322) and a part of the first recess (331); a light-emitting unit (350) formed on the first recess (331) and located between the first protruding block (341) and the second protruding block (342); and a convex lens (390) disposed on the light-emitting unit (350) and vertically aligned with same, the convex lens (390) having a bottom surface and a convex surface (392) facing the light-emitting unit (350), and an included angle between the bottom surface (391) and the convex surface (392) ranging from 20° to 50°.

Description

Light emitting device and manufacturing method thereof technical field

The present disclosure relates to a light emitting device and a manufacturing method thereof, in particular to a light emitting device including bumps and convex lenses and a manufacturing method thereof.

Background technique

Organic light emitting devices have been widely used in displays of the most high-end electronic devices. However, due to limitations of the prior art, the brightness of the light emitting device is limited. Therefore, for display manufacturers, a light emitting device with higher luminance becomes a striving goal.

Contents of the invention

A light-emitting device includes a substrate, a first conductive layer disposed on the substrate, a first bump seat disposed on the first conductive layer, a second bump seat disposed on the first conductive layer and The first bump seat is separated, and a first electrode layer is disposed on the first bump seat, the first conductive layer and the second bump seat, and the first electrode layer includes the first electrode layer located on the first bump seat The side wall, the side wall of the second bump seat, and a first recess between the first bump seat and the second bump seat. The light-emitting device also includes a first protrusion disposed on the first protrusion seat and at least a part of the first recess, a second protrusion disposed on the second protrusion seat and at least a part of the first recess. At least a part of at least a part, a light-emitting unit is formed in the first concave portion and is located between the first protrusion and the second protrusion, and a convex lens is arranged on the light-emitting unit and vertically aligned with the light-emitting unit, the convex lens has A bottom surface and a convex surface, the convex surface protrudes toward the light-emitting unit, and there is an included angle between the bottom surface and the convex surface, and the included angle ranges from 20° to 50°

In some embodiments, the light emitting device further includes a third bump seat disposed on the first conductive layer and separated from the first bump seat and the second bump seat; and a second recess , formed between the second bump seat and the third bump seat, and the second bump fills up the second recess.

In some embodiments, the convex lens overlaps with at least a portion of the first bump seat and at least a portion of the second bump seat, and is separated from the second concave portion when viewed from a top view.

In some embodiments, the light-emitting device further includes a covering layer disposed on the first bump and the second bump and the light-emitting unit; and a filler layer disposed on the covering layer and the convex lens, wherein the convex lens has a first Refractive index, the filler layer has a second refractive index, and the difference between the first refractive index and the second refractive index is less than 0.05.

In some embodiments, the covering layer has a third refractive index, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index.

A light-emitting device includes a pixel array, a first convex lens and a second convex lens. The pixel array includes a first pixel, a second pixel spaced next to the first pixel, and a concave portion between the first pixel and the second pixel; the first convex lens is arranged on the first pixel and vertically aligned with the first pixel; and the second convex lens is disposed on the second pixel and separated from the first convex lens. The first pixel includes a first bump seat; a second bump seat separated from the first bump seat; a first bump is arranged on the first bump seat and covers the first bump At least a part of an upper surface and a side wall of the seat; a second protrusion is arranged on the second protrusion seat and covers at least one of an upper surface and a side wall of the second protrusion seat In part, the side wall of the first bump seat is opposite to the side wall of the second bump seat; an electrode layer is arranged between the first bump and the second bump; and a light emitting unit is arranged On the electrode layer between the first bump and the second bump. Wherein the second pixel includes a third bump seat separated from the second bump seat, the recess is arranged between the second bump seat and the third bump seat, and the second bump fills up The recess extends to cover the third bump seat.

In some embodiments, the electrode layer extends between the first bump and the sidewall of the first bump seat, and extends to the sidewall of the second bump and the second bump seat between.

In some embodiments, the light-emitting unit is elliptical, and the first convex lens has a bottom surface and a convex surface, the convex surface protrudes toward the light-emitting unit, and there is an included angle between the bottom surface and the convex surface, the clip The angle ranges from 20° to 50°.

A method for preparing a light-emitting device, comprising forming a first conductive layer on a first substrate; forming a dielectric layer on the first conductive layer; forming a second conductive layer on the dielectric layer; forming a The first electrode layer is on the second conductive layer; patterning the first electrode layer, the second conductive layer and the dielectric layer to form a first opening exposing the first conductive layer; forming a second electrode layer On the first opening and the first electrode layer, a first recess having the same shape as the first opening is formed, the first recess has a first side wall and a second side wall opposite to the first side wall , and a bottom between the first side wall and the second side wall; forming a first protrusion on the first side wall of the first recess; forming a second protrusion on the first recess second side wall; forming a light-emitting unit between the bottom of the first recess and the first bump and the second bump; forming a convex lens on a second substrate; and the convex lens and the second substrate It is arranged on the light-emitting unit, and the convex lens is vertically aligned with the light-emitting unit. Wherein the convex lens has a bottom surface and a convex surface, the convex surface protrudes toward the light emitting unit, and there is an included angle (θ) between the bottom surface and the convex surface, and the included angle ranges from 20° to 50°.

In some embodiments, the method of manufacturing a light-emitting device further includes forming a covering layer between the convex lens and the convex lens; and forming a filler layer between the covering layer and the convex lens, and in contact with the convex lens. Wherein, the convex lens has a first refractive index, the filler layer has a second refractive index, the covering layer has a third refractive index, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to The third refractive index, and the difference between the first refractive index and the second refractive index is less than 0.05.

Description of drawings

In order to help readers achieve the best understanding, it is recommended to refer to the attached illustrations and detailed descriptions when reading this disclosure. Please note that in accordance with standard industry practice, various features are not drawn to scale. In fact, the dimensions of the various features may be deliberately expanded or reduced for clarity of illustration.

Fig. 1 is a top view of a light emitting device according to some embodiments.

Fig. 2 is a cross-sectional view of a light emitting device according to some embodiments.

Fig. 3 is a top view of a light emitting device according to some embodiments.

4 is a flowchart of a method of fabricating a light emitting device, according to certain embodiments.

5-26 are schematic diagrams illustrating light emitting devices at various stages of fabrication according to methods of certain embodiments of the present disclosure.

Detailed ways

The following disclosure provides many different embodiments, or examples, for implementing the various features of the application. Specific examples of components and configurations are described below to simplify the disclosure of the present application. Of course, these are examples only and are not intended to limit the application. For example, the following description of forming a first feature on or over a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which other features are formed between the first and second features, Thus the first and second features are not in direct contact. Additionally, the application may repeat components and/or letters in different instances. This repetition is for purposes of simplicity and clarity and does not dictate the relationship between the different embodiments and/or architectures discussed.

Furthermore, this application can use spatially corresponding words, such as "below", "between", "below", "lower", "higher", "higher" and other simple descriptions of similar words to describe the figure. The relationship of one component or feature to another component or feature. Spatially equivalent terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be oriented (rotated 90 degrees or otherwise) and the spatially corresponding descriptions used in this application interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their individual testing measurements. Also, as used herein, "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean considered by those of ordinary skill in the art. Except in operating/working examples, or unless otherwise specified, all numerical ranges, amounts, values, and ratios disclosed herein, such as amounts of materials, time periods, temperatures, operating conditions, ratios of amounts, and the like, are express It should be understood that it is modified in all cases by the word "about". Therefore, unless stated otherwise, the numerical parameters in the present disclosure and the patent claims are approximate values that may vary as required. At a minimum, each numerical parameter should be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Herein, ranges can be expressed as from one endpoint to the other, or between two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise stated.

FIG. 1 is a top view illustrating a light emitting device 100 . The light emitting device 100 has a pixel array, the pixel array includes a plurality of pixels, and each pixel includes a light emitting unit 350 . The pixel array may, for example but not limited to, include a first pixel and a second pixel spaced beside the first pixel, each pixel includes a light emitting unit 350 , and the recess 361 is located between the first pixel and the second pixel. Viewed from a top view, the light emitting unit 350 may be in any shape, such as but not limited to a circle, an ellipse, a polygon, and the like.

In some embodiments, the light emitting device 100 includes a plurality of light emitting units 350 and a cover layer 381 , a filler layer 382 , a silicon oxide layer 383 , and a second substrate 384 located above the light emitting units 350 . For the light emitting unit 350, it can be arranged between a plurality of protrusions 340, for example, the first recess 331 disposed between the first protrusion 341 and the second protrusion 342, the first recess 331 provides a recess for accommodating the array of light emitting units 350 array. In order to make the light emitting device 100 have better brightness, a second concave portion 361 is disposed under the second protrusion 342 , and a convex lens 390 is disposed on each light emitting unit 350 . In some embodiments, the plurality of second recesses 361 form a recess array for reflecting the light emitted by the array of light emitting units 350 . In some embodiments, the plurality of light emitting units 350 are separated by the plurality of bumps 340 .

In some implementations, each convex lens 350 is disposed corresponding to each light emitting unit 350 . In some implementations, the second concave portion 361 is offset from the plurality of convex lenses 350 in a plan view.

2 is a cross-sectional view of a light emitting device according to some embodiments of the present disclosure. FIG. 2 is an illustration of a sectional view along line AA in FIG. 1 and only illustrates this area. The light emitting device has several bumps 340 to define a pattern of light emitting pixels. The first recess 331 is located between two adjacent protrusions 340 and provides a space for accommodating light-emitting pixels.

Referring to FIG. 2 , the light emitting device 100 includes a first substrate 110 and a first conductive layer 310 disposed on the first substrate 110 . In some embodiments, the first substrate 110 is located under the first conductive layer 310 . In some embodiments, the first substrate 110 may include a transistor array whose configuration corresponds to the light emitting unit 350 . The first substrate 110 may include several capacitors. In some embodiments, more than one transistor is configured to form a circuit with a capacitor and a light emitting unit 350 .

In some embodiments, the first substrate 110 includes a substrate 111 , a dielectric layer 112 , and one or more circuits are disposed on the substrate 111 . In some embodiments, the substrate 111 is a transparent substrate, or at least a part of the substrate is transparent. In some embodiments, the substrate 111 is a non-flexible substrate, and the material of the substrate 111 may include glass, quartz, low temperature poly-silicon (LTPS) or other suitable materials. In some embodiments, the substrate 111 is a flexible substrate, and the material of the substrate 111 may include transparent epoxy resin, polyimide, polyvinyl chloride, methyl methacrylate or other suitable materials. The dielectric layer 112 can be disposed on the substrate 110 as shown in FIG. 1 as needed. In some embodiments, the dielectric layer 112 may include silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials.

In some embodiments, the circuit may comprise a CMOS circuit, or comprise a plurality of transistors 210 and a plurality of capacitors 220 adjacent to the transistor, wherein the transistors 210 and the capacitors 220 are formed on the dielectric layer 112 . In some embodiments, the transistor 210 is a thin-film transistor (thin-film transistor, TFT). Each transistor 210 includes a source/drain region 212 (including at least one source region and a drain region), a channel region 213 between the source/drain regions 212, and a gate disposed above the channel region 213. An electrode 214 and a gate insulator 215 between the channel region 213 and the gate electrode 214 . The gate electrode 214 can be made of conductive material, such as metal, silicide or metal alloy. In some embodiments, the gate electrode 214 can be a composite structure that includes several different layers, and these different layers can be distinguished from each other by applying an etchant and observing under a microscope. In some embodiments, the gate electrode 214 and the first metal layer of the ILD structure 230 are formed simultaneously. The interlayer dielectric structure 230 is disposed on the circuit or transistor 210 . The interlayer dielectric structure 230 may include several layers of metal wires and dielectric materials for electrical connection and isolation. The channel region 213 of the transistor 210 may be made of a semiconductor material such as silicon or other elements selected from Group IV or Group III and Group V. In some embodiments, the ILD structure 230 has a thickness between about 100 nm and 1000 nm. In some embodiments, the ILD structure 230 has a thickness between about 200 nm and 500 nm.

In some embodiments, the gate insulator 215 covers the channel region 213 and the source/drain region 212 of the transistor 210 , and the gate insulator 215 is disposed between the adjacent capacitor 220 and the dielectric layer 112 . In some embodiments, the gate insulator 215 is formed after the source/drain region 212 and the channel region 213 are formed on the dielectric layer 112 . Source/drain regions 212 are disposed on opposite sides of the channel region 213 to provide carriers. In some embodiments, the capacitor 220 is disposed between the transistors 210 . Each capacitor 220 includes a lower electrode 221 , an upper electrode 222 and an insulating layer 223 between the upper electrode 222 and the lower electrode 221 . In some embodiments, the bottom electrode 221 and the metal layer of the ILD structure 230 on the dielectric layer 112 are formed simultaneously. In some embodiments, the insulating layer 223 is formed on the transistor 210 after the metal layer is formed. In some embodiments, the insulating layer 223 is disposed on and conforms to the bottom electrode 221 and the transistor 210 . The upper electrode 222 is disposed on the insulating layer 223 in the interlayer dielectric structure 230 . The upper electrode 222 may include titanium, aluminum, copper, titanium nitride, combinations thereof, or other suitable materials. In some embodiments, the upper electrode 222 and the metal layer of the ILD structure 230 are formed simultaneously. In some embodiments, after the insulating layer 223 is formed, the upper electrode 222 and the metal layer of the upper electrode 222 and the interlayer dielectric structure 230 are formed.

In some embodiments, a connection structure 240 electrically connects the transistor 210 to the capacitor 220 . The connection structure 240 includes a plurality of connection vias and a plurality of connection lines. The connection vias may be connected to the source/drain region 212 of the transistor 210, the gate electrode 214 of the transistor 210, and the lower and/or upper electrodes 221 and 222 of the capacitor 220 are connected to connection lines and formed on the substrate 111 an integrated circuit. The connection structure 240 may include some connection vias 241 , one end of which is connected to the drain region 212 of the transistor 210 . The connection structure 240 may include certain connection vias 242 , one end of which is connected to the source region 212 of the transistor 210 . The connection structure 240 may include some connection vias 243 one end of which is connected to the lower electrode 221 of the capacitor 220 . The connection structure 240 may include some connection wires 244 , one ends of which are respectively connected to the connection passages 241 . The connecting structure 240 may include some connecting wires (not shown), one end of which is only connected to the connecting vias 242 respectively. The connection structure 240 may further include some connection wires 245 , one end of which is connected to the connection passage 242 and the connection passage 243 . In some embodiments, the connection lines are formed while forming the metal layer (eg, the third metal layer) of the interlayer dielectric structure 230 . The connection structure 240 is electrically connected to a conductive plug 246 . In some embodiments, the conductive plug 246 is electrically connected to the connecting wire 244 and/or the connecting via 241 .

The data lines (not shown in the figure) are disposed above the connection lines of the connection structure 240 to be electrically connected to the source/drain regions 212 .

In the light emitting device 100 , the first conductive layer 310 is disposed above the interlayer dielectric structure 230 and the connection structure 240 , wherein a part of the first conductive layer 310 is electrically connected to the connection structure 240 . In some embodiments, the first conductive layer 310 has a flat surface like the first substrate 110, and is electrically connected to the transistor through a conductive plug 246 and the connection structure 240 (including the connection vias 242, 243 and the connection line 245). 210 and/or capacitor 220. In some embodiments, the first conductive layer 310 is discontinuously disposed on the first substrate 110 . In some embodiments, the first conductive layer 310 is disconnected by the second concave portion 361 .

In some embodiments, the first conductive layer 310 includes Al. In some embodiments, the thickness of the first conductive layer 310 ranges from 50 nm to 300 nm.

In some embodiments, the etch stop layer 311 is disposed between the first substrate 110 and the first conductive layer 310 . In some embodiments, a portion of the etch stop layer 311 is exposed from the first conductive layer 310 and contacts the second bump 341 . In some embodiments, the etch stop layer 311 includes a material having a different etch selectivity than aluminum. In some embodiments, the etch stop layer 311 includes Ti. In some embodiments, the thickness of the etch stop layer 311 ranges from 300 nm to 800 nm. In some embodiments, the etch stop layer 311 surrounds the conductive plug 246 .

In some embodiments, the first bump seat 321 and the second bump seat 322 are respectively disposed on the first conductive layer 310 and separated from each other. In some embodiments, viewed from a cross-sectional view, there is a radius angle σ1 between the sidewall 3212 and the bottom surface of the first bump seat 321 , and the radius angle σ1 ranges from 10 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional view, the first bump seat 321 is trapezoidal. In some embodiments, the sidewall 3212 of the first bump seat 321 is an arc-shaped surface. In some embodiments, the sidewall 3212 of the first bump seat 321 is a concave arc surface.

In some embodiments, the first bump pad 321 includes a stack of at least three different layers. In some embodiments, the first bump seat 321 includes a dielectric layer 324 disposed on the first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second on the conductive layer 325 . In some embodiments, the dielectric layer 324 includes a dielectric material. In some embodiments, the dielectric layer 324 includes SiN. In some embodiments, the thickness of the dielectric layer 324 is smaller than that of the first conductive layer 310 , for example, has a thickness ranging from 5 nm to 50 nm. In some embodiments, the second conductive layer 325 includes aluminum. In some embodiments, the thickness of the second conductive layer 325 is greater than that of the dielectric layer 324, such as having a thickness ranging from 50 nm to 300 nm. In some embodiments, the thickness of the first conductive layer 310 is greater than that of the second conductive layer 310. The thickness of layer 325 . In some embodiments, the second electrode layer 326 is transparent. In some embodiments, the second electrode layer 326 includes an electrode material such as but not limited to indium tin oxide (ITO), molybdenum, or a combination thereof. In some embodiments, the thickness of the second electrode layer 326 ranges from 5 nm to 50 nm.

In some embodiments, viewed from a cross-sectional view, there is a radius angle σ2 between the first sidewall 3222 and the lower surface of the second bump seat 322 , and the range of the radius angle σ2 is 10 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional view, the second bump seat 322 is trapezoidal. In some embodiments, the first sidewall 3222 of the second bump seat 322 is an arc-shaped surface. In some embodiments, the first sidewall 3222 of the second bump seat 322 is a concave arc surface. In some embodiments, the second bump pad 322 includes a stack of at least three different layers. In some embodiments, the second bump seat 322 includes a dielectric layer 324 disposed on the first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second on the conductive layer 325 . In some embodiments, the second bump seat 322 includes the same stack structure as the first bump seat 321 . In some embodiments, the height of the second bump seat 322 is the same as that of the first bump seat 321 . In some embodiments, the widths of the second bump seat 322 and the first bump seat 321 may be the same or different.

In the light emitting device 100 , the first electrode layer 330 is disposed on the first bump seat 321 , the second bump seat 322 , and the first conductive layer 310 between the first bump seat 321 and the second bump seat 322 . In some embodiments, the first electrode layer 330 is continuously disposed on the first bump seat 321 , the first conductive layer 310 and the second bump seat 322 . In some embodiments, the first electrode layer 330 is in contact with the first bump seat 321 , the first conductive layer 310 and the second bump seat 322 . In some embodiments, the first electrode layer 330 is in contact with the first conductive layer 310 between the first bump seat 321 and the second bump seat 322 . In some embodiments, the first electrode layer 330 is in contact with the sidewall 3212 and the upper surface 3211 of the first bump seat 321 . In some embodiments, the first electrode layer 330 is in contact with the first sidewall 3222 and the upper surface 3221 of the second bump seat 322 .

In some embodiments, the first electrode layer 330 is transparent. In some embodiments, the first electrode layer 330 includes an electrode material, such as but not limited to indium tin oxide (ITO), molybdenum, or a combination thereof. In some embodiments, the thickness of the first electrode layer 330 ranges from 5 nm to 50 nm. In some embodiments, the thickness of the first electrode layer 330 and the thickness of the second electrode layer 326 may be the same or different. In some embodiments, the refractive index of the first electrode layer 330 is different from that of the second electrode layer 326 . In some embodiments, the first electrode layer 330 and the second electrode layer 326 include electrode materials with different crystal phases, and the brightness of the light emitting device 100 is increased by configuring materials with different crystal phases and different refractive indices.

In some embodiments, the first electrode layer 330 includes a first recess 331 located between the first bump seat 321 and the second bump seat 322 . In some embodiments, the first recess 331 is located on the sidewall 3212 of the first bump seat 321 and the first sidewall 3222 of the second bump seat 322 . In some embodiments, the first recess 331 has a first sidewall 332 , a second sidewall 333 opposite to the first sidewall 332 , and a bottom 334 between the first sidewall 332 and the second sidewall 333 . In some embodiments, the first side wall 332 of the first recess 331 is disposed on the side wall 3212 of the first bump seat 321, and the second side wall 333 of the first recess 331 is disposed on the second bump seat 322 on the first side wall 3222 . In some embodiments, the bottom 334 of the first recess 331 is in contact with the first conductive layer 310 .

In the light emitting device 100 , a first protruding block 341 and a second protruding block 342 are respectively provided on two opposite side walls 332 , 333 of the first concave portion 331 . The first bump 341 and the second bump 342 are separated from each other. In some embodiments, the first bump seat 321 and the second bump seat 322 are used for disposing the fast 340 thereon. In some embodiments, the first bump 341 is disposed on the first bump seat 321 and covers at least a part of the first sidewall 332 of the first recess 331 of the first electrode layer 330 . In some embodiments, the first bump 341 covers the upper surface 3211 and the sidewall 3212 of the first bump seat 321 . The first bump 341 and the second bump 342 respectively have curved surfaces protruding from the first substrate 110 . In some embodiments, the bumps 340 serve as a pattern definition layer. In some embodiments, the area between the first bump 341 and the second bump 342 is configured to accommodate the light emitting unit 350 . In some embodiments, the first bump 341 and/or the second bump 342 includes a photosensitive material. In some embodiments, the first bump 341 and/or the second bump 342 includes a light-absorbing material. In some embodiments, the first bump 341 and/or the second bump 342 includes a light-transmitting material. In some embodiments, the first bump 341 and/or the second bump 342 does not contain fluorine. In some embodiments, the first bump 341 and the second bump 342 include the same material. In some embodiments, the thickness T1 of the first bump 341 (equivalent to the distance from the upper surface of the first electrode layer 330 on the first bump seat 321 to the apex of the first bump 341 ) ranges from 100 nm to 500 nm. .

In some embodiments, the second protrusion 342 is disposed on the second protrusion seat 322 and covers at least a part of the second side wall 333 . In some embodiments, the second bump 342 covers the upper surface 3221 and the sidewall 3222 of the second bump seat 322 . In some embodiments, the first electrode layer 330 is disposed between the first bump 341 and the second bump 342 , and extends to between the first bump 341 and the sidewall 3212 of the first bump seat 321 , and extends to Between the second bump 342 and the first side wall 3222 of the second bump seat 322 . In some embodiments, the thickness T2 of the second bump 342 (equivalent to the distance from the upper surface of the first electrode layer 330 on the second bump seat 322 to the apex of the second bump 342) ranges from 100 nm to 500 nm. .

In the light emitting device 100 , the light emitting unit 350 is formed on the bottom 334 of the first recess 331 and located between the first bump 341 and the second bump 342 . In some embodiments, the light emitting unit 350 is in the same shape as the first concave portion 331 . In some embodiments, the light emitting unit 350 is in contact with the first bump 341 and the second bump 342. In some embodiments, the upper surface of the light emitting unit 350 is higher than the upper surface 3211 of the first bump seat 321 and lower than the apex of the first bump 341 . When the upper surface of the light emitting unit 350 is lower than the apex of the first protrusion 341 , the light emitting device 100 is less likely to be broken, and it is beneficial for the light emitting unit 350 to emit light laterally.

In some embodiments, the light emitting unit 350 includes a carrier injection layer 351 . The carrier injection layer 351 is disposed on the exposed surface of the bottom surface 334 of the first recess 331 of the first electrode layer 330 . The carrier injection layer 351 is lined along the bottom surface 334 . More specifically, the area between the first bump 341 and the second bump 342 is configured as an effective light emitting area of the light emitting unit 350 . In some embodiments, each light emitting unit 350 has an individual carrier injection layer 351 . In some embodiments, the carrier injection layer 351 is in contact with the bottom surface 334 of the first recess 331 of the first electrode layer 330 . In some embodiments, the carrier injection layer 351 is in contact with the first bump 341 and the second bump 342 . In some embodiments, the carrier injection layer 351 is used for hole injection or electron injection. In some embodiments, the carrier injection layer 351 includes an organic material.

In some embodiments, the light-emitting unit 350 includes a carrier transport layer 352 (or called a first-type carrier transport layer). The carrier injection layer 351 is disposed under the carrier transport layer 352 . In some embodiments, the carrier transport layer 352 lines the carrier injection layer 351 . Each light emitting unit has an individual carrier transport layer 352 . In some embodiments, the carrier transport layer 352 is used for hole transport or electron transport. In some embodiments, the carrier transport layer 352 is in contact with the carrier injection layer 351 . In some embodiments, the carrier transport layer 352 is in contact with the first bump 341 and the second bump 342 . In some embodiments, the carrier transport layer 352 includes organic materials.

In some embodiments, the light emitting unit 350 includes an organic light emitting (EM) layer 353 . In some embodiments, the organic light emitting layer 353 covers the carrier transport layer 352 . In some embodiments, the organic light emitting layer 353 lines along the carrier transport layer 352 . In some embodiments, the organic light emitting layer 263 is configured to emit light in a color, such as red, green or blue. In some embodiments, the organic light emitting layer 263 includes organic light emitting materials.

In some embodiments, the light emitting unit 350 includes a carrier transport layer 354 (or called a second-type carrier transport layer). In some embodiments, a carrier transport layer 354 (or called a second-type carrier transport layer) is disposed on the organic light emitting layer 353 . In some embodiments, the carrier transport layer 354 can be a hole transport layer or an electron transport layer. In some embodiments, the carrier transport layer 354 and the carrier transport layer 352 are respectively configured in opposite valence states. In some embodiments, the carrier transport layer 354 includes organic materials.

In some embodiments, the light emitting unit 350 includes a second electrode 355 . In some embodiments, the second electrode 355 is disposed on the organic carrier transport layer 354 . In some embodiments, the second electrode 355 extends to the side surfaces of the first bump 341 and the second bump 342 . The second electrode 355 can be a metal material, such as Ag, Mg and the like. In some embodiments, the second electrode 355 includes ITO or IZO (indium zinc oxide). In some embodiments, each light emitting unit 350 has an independent second electrode 355 . In some embodiments, the plurality of light emitting units 350 share a common second electrode 355 .

The light emitting device 100 further includes a second recess 361 , and the second recess 361 and the first recess 331 are separated from each other. In some embodiments, the second concave portion 361 is used to reflect the light emitted by the light emitting unit 350 through the second concave portion 361 to increase the brightness of the light emitting device 100 . The second recess 361 is formed between the second protrusion seat 322 and the third protrusion seat 323 , and the second protrusion 342 fills the second recess 361 . In some embodiments, the third bump seat 323 is disposed on the first conductive layer 310 and separated from the first bump seat 321 and the second bump seat 322 . In some embodiments, the second bump seat 342 is located between the first bump seat 341 and the third bump seat 343 .

In some embodiments, viewed from a cross-sectional view, there is a radius angle σ3 between the sidewall 3232 and the lower surface of the third bump seat 322 , and the range of the radius angle σ3 is 10 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional view, the third bump seat 323 is trapezoidal. In some embodiments, the sidewall 3232 of the third protrusion seat 323 is an arc-shaped surface. In some embodiments, the sidewall 3232 of the third bump seat 323 is a concave arc surface. In some embodiments, the third bump pad 323 includes a stack of at least three different layers. In some embodiments, the third bump seat 323 includes a dielectric layer 324 disposed on the first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second on the conductive layer 325 . In some embodiments, the third bump seat 323 includes the same stack structure as the first bump seat 321 . In some embodiments, the height of the third bump seat 323 is the same as that of the first bump seat 321 or the second bump seat 322 . In some embodiments, the widths of the third bump seat 323 and the first bump seat 321 or the first bump seat 322 may be the same or different.

In some embodiments, the first electrode layer 330 is disposed on the upper surface 3221 of the second bump seat 322 and the upper surface 3231 of the third bump seat 323 . In some embodiments, the first electrode layer 330 is not disposed in the second recess 361 . In some embodiments, the first electrode layer 330 does not contact the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323 . The first sidewall 3222 and the second sidewall 3223 of the second bump seat 322 are respectively located on opposite sides of the second bump seat 322 . In some embodiments, the second sidewall 3223 of the second bump seat 322 is an arc-shaped surface. In some embodiments, the second sidewall 3223 of the second bump seat 322 is a concave arc surface.

In some embodiments, the light emitted by the light emitting unit 350 includes side light, and the light enters the second recess 362 after passing through the second protrusion 342 , and then passes through the second side wall 3223 and the third protrusion of the second protrusion seat 322 . The side wall 3232 of the block seat 323 leaves the second recess 361 after reflection. In some embodiments, a second protrusion seat 322 is disposed between the second concave portion 361 and the first concave portion 331 . In some embodiments, a part of the second protrusion 342 is disposed between the second concave portion 361 and the first concave portion 331 . In some embodiments, the distance between the second recess 361 and the first recess 331 for setting the light emitting unit 350 is not particularly limited, as long as the second recess 361 can reflect the light emitted by the light emitting unit 350 through the second recess 361 , or increase the brightness of the light emitting device 100 .

In some embodiments, the depth of the second recess 361 is greater than that of the first recess 331 . In some embodiments, the second recess 361 extends to between the first conductive layers 310 . In some embodiments, the second recess 361 is surrounded by the first electrode layer 330 , the second bump seat 322 , the third bump seat 323 and the first metal layer 310 . In some embodiments, the bottom of the second recess 361 is the etch stop layer 311 .

The second protrusion 342 is disposed on the second protrusion seat 322 and in the second recess 361 . In some embodiments, the second protrusion 342 is disposed on the second protrusion seat 322 and the third protrusion seat 323 , and in the second recess 361 . In some embodiments, the second bump 342 covers at least a part of the upper surface 3221 and the first side wall 3222 of the second bump seat 322 , and the second bump 342 also covers the first side of the second bump seat 322 . Two side walls 3223. In some embodiments, the second bump 342 is in contact with at least a part of the upper surface 3221 of the second bump seat 322 and the first side wall 3222 , and the second bump 342 is also in contact with the top surface 3221 of the second bump seat 322 . The second sidewall 3223 is in contact. In some embodiments, the second bump 342 is in contact with the upper surface 3231 and the sidewall 3232 of the third bump seat 323 . In some embodiments, the second bump 342 goes deep into the second recess 361 and contacts the etch stop layer 311 .

In some embodiments, the light emitting device 100 further includes a third conductive layer 370 disposed on the light emitting unit 350 . In some embodiments, the third conductive layer 370 is disposed on the second electrode 355 . In some embodiments, the third conductive layer 370 is disposed on the first bump 341 , the second bump 342 and the light emitting unit 350 . In some embodiments, the third conductive layer 370 is in the same shape as the light emitting unit 350 , the first bump 341 and the second bump 342 . In some embodiments, the third conductive layer 370 includes Ag, Mg and combinations thereof. In some embodiments, the third conductive layer 370 and the second electrode 355 include materials with different crystal phases, and the brightness of the light emitting device 200 is increased by configuring materials with different crystal phases and different refractive indices. In some embodiments, the third conductive layer 370 includes a multi-layer structure, such as but not limited to a combination of an Ag layer (not shown) and a Mg layer (not shown). The thickness range of the third conductive layer 370 is

to

In some embodiments, the light emitting device 100 further includes a cover layer 381 disposed on the first bump 341 and the second bump 342 and the light emitting unit 350 . In some embodiments, the covering layer 381 includes organic materials. In some embodiments, the penetration rate of the covering layer 381 is greater than 99%. In some embodiments, the upper surface of the covering layer 381 is flat.

In some embodiments, a filler layer 382 is further included on the covering layer 381 . In some embodiments, the covering layer 381 is located between the light emitting unit 350 and the filler layer 382 . In some embodiments, the filler layer 382 includes a resin material. In some embodiments, the permeability of the filler layer 382 is greater than 99%.

In some embodiments, the convex lens 390 is disposed on the light emitting unit 350 and vertically aligned with the light emitting unit 350 , so that the light emitted by the light emitting unit 350 can pass through the convex lens 390 . In some embodiments, the convex lens 390 has a bottom surface 391 and a convex surface 392 , the convex surface 392 protrudes from the bottom surface 391 toward the light emitting unit 350 and is surrounded by the filler layer 382 . In some embodiments, the bottom surface 391 of the convex lens 390 is coplanar with the top surface of the filler layer 382 .

In some embodiments, viewed from above, the convex lens 390 overlaps at least a part of the first bump seat 321 and at least a part of the second bump seat 322 . In some embodiments, the convex lens 390 overlaps at least a portion of the sidewall 3212 of the first bump seat 321 and at least a portion of the first sidewall 3222 of the second bump seat 322 in a top view. In some embodiments, viewed from above, the convex lens 390 overlaps with at least a part of the upper surface 3221 of the second bump seat 322 . In some embodiments, viewed from a top view, the convex lens 390 is separated from the second concave portion 361 , and the convex lens 390 is not disposed above the second concave portion 361 .

In some embodiments, there is an included angle θ between the bottom surface 391 and the convex surface 392 of the convex lens 390 , and the included angle θ ranges from 20° to 50°. When the included angle is greater than 50°, the thickness of the convex lens 390 increases, resulting in a larger overall thickness of the light emitting device 100, and the convex lens 390 tends to reflect the light emitted by the light emitting unit, resulting in stray light in the light emitting device and the brightness of the light emitting device gradually weakens. When the included angle is less than 20°, the effect of the convex lens on refracting light is not good. In some embodiments, the included angle θ ranges from 20° to 40°. In some embodiments, the lenticular lens 390 includes organic material.

In some embodiments, one convex lens 390 is spaced apart from another convex lens 390 , and each convex lens 390 corresponds to a different light emitting unit 350 . In some embodiments, at least a portion of the filler layer 382 is located between adjacent lenticular lenses 390 . In some embodiments, the second concave portion 361 is located between one convex lens 390 and the other convex lens 390 in a top view.

In some embodiments, the convex lens 390 has a first refractive index, the filler layer 382 has a second refractive index, and the covering layer 381 has a third refractive index. In some embodiments, the difference between the second refractive index and the first refractive index is less than 0.05. In some embodiments, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index. In some embodiments, the difference between the first refractive index and the third refractive index is less than or equal to 0.08. In some embodiments, the first refractive index ranges from 1.45 to 1.55. In some embodiments, the second refractive index ranges from 1.51 to 1.6. In some embodiments, the third refractive index ranges from 1.45 to 1.55.

In some embodiments, the light emitting device 100 further includes a silicon oxide layer 383 disposed on the filler layer 382 and the convex lens 390 , and a second substrate 384 disposed on the silicon oxide layer 383 . In some embodiments, the silicon oxide layer 383 is in contact with the bottom surface 392 of the convex lens and the filler layer 382 . In some embodiments, the silicon oxide layer 383 includes silicon dioxide. In some embodiments, the silicon oxide layer 383 has a fourth refractive index. In some embodiments, the second refractive index is greater than the fourth refractive index. In some embodiments, the fourth index of refraction is equal to the first index of refraction. In some embodiments, the second substrate 384 is a transparent substrate, which may include, but is not limited to, glass.

FIG. 3 is a top view illustrating the light emitting device 200 . The light emitting device 200 has a pixel array, the pixel array includes a plurality of pixels, and each pixel includes a light emitting unit 350 . The pixel array can be, for example but not limited to, comprising the first pixel 201 and the second pixel 202 disposed beside the first pixel 201 at intervals. In some embodiments, the pixel array may include, but is not limited to, a plurality of first pixels 201 , a plurality of second pixels 202 and a plurality of third pixels 203 for displaying different colors. Each first pixel 201 includes a light emitting unit 350G and a convex lens 390G, each second pixel 202 includes a light emitting unit 350R and a convex lens 390R, and each third pixel 203 includes a light emitting unit 350B and a convex lens 390B. The light emitting unit 350G, the light emitting unit 350R, and the light emitting unit 350B can be used to emit light of the first color, light of the second color and light of the third color respectively. For example, the light emitting unit 350G can be used to display green, the light emitting unit 350R can be used to display red, and the light emitting unit 350B can be used to display blue.

In some embodiments, the arrangement of the pixel array includes, from left to right, the second pixel 202 , the first pixel 201 and the third pixel 203 , but is not limited thereto. In some embodiments, the plurality of first pixels 201 are scattered with each other, the plurality of third pixels 203 are gathered with each other, and the arrangement of the second pixels 202 is not particularly limited. The arrangement of various pixels may also be changed according to design or other considerations. Moreover, although the shapes of the light emitting unit 350G, the light emitting unit 350R, and the light emitting unit 350B shown in FIG. 3 are oval, other shapes may also be used. In addition, the number of types of pixels can be, but not limited to, three types of pixels; the number of pixels can be changed, and other appropriate types of pixels can be used to display different colors, such as yellow, white or other colors.

In some embodiments, the shapes of the light emitting unit 350G, the light emitting unit 350R, and the light emitting unit 350B are elliptical, respectively having a major axis D1 and a minor axis D2, the range of the major axis D1 is 3.4-4 μm, and the range of the minor axis D2 is 2.5-3.1 μm. In some embodiments, the long axis D1 of the light emitting unit 350G, the light emitting unit 350R, and the light emitting unit 350B is 3.7 μm, and the short axis D2 is 3.7 μm respectively. In some embodiments, the shapes of the convex lens 390G, the convex lens 390R, and the convex lens 390B are circular or elliptical, and other shapes can also be used. The size and shape of the convex lens 390G, the convex lens 390R and the convex lens 390B may be the same or different.

In some embodiments, the convex lens 390G has a major axis D3 and a minor axis D4, the major axis D3 ranges from 4.7-5.3 μm, and the minor axis D4 ranges from 4.1-4.7 μm. In some embodiments, the major axis D3 of the convex lens 390G is 5.0 μm, and the minor axis D4 is 4.4 μm. In some embodiments, the convex lens 390R has a major axis D5 and a minor axis D6, the major axis D5 ranges from 4.5-5.1 μm, and the minor axis D6 ranges from 4.1-4.7 μm. In some embodiments, the major axis D5 of the convex lens 390R is 4.8 μm, and the minor axis D6 is 4.4 μm. In some embodiments, the convex lens 390B has a major axis D7 and a minor axis D8, the major axis D7 ranges from 4.6-5.1 μm, and the minor axis D8 ranges from 4.0-4.7 μm. In some embodiments, the major axis D7 of the convex lens 390B is 4.8 μm, and the minor axis D8 is 4.3 μm.

In some embodiments, the distance D9 between adjacent pixels, such as but not limited to the distance D9 between the first pixel 201 and the second pixel 202, the distance D9 between the second pixel 202 and the third pixel 203, or the distance D9 between the second pixel 202 and the third pixel 203, or The distance D9 between a pixel 201 and the third pixel 203 can be the same or different. The distance D9 is in the range of 0.5-1.1 μm. In some embodiments, the distance D9 between adjacent pixels is 0.8 μm.

To further illustrate the present disclosure, FIG. 4 is a flowchart of a method 400 of fabricating a light emitting device according to certain embodiments. The method 400 for preparing a light-emitting device such as the light-emitting device 100 includes the following steps: 401 forming a first conductive layer on a first substrate; 402 forming a dielectric layer on the first conductive layer; 403 forming a second conductive layer on the dielectric layer; 404 forming a second electrode layer on the second conductive layer; 405 patterning the second electrode layer, the second conductive layer and the dielectric layer to form a first opening exposing the first conductive layer; 406 forming the first electrode layer on the second On an opening and the second electrode layer, to form a first concave portion with the same shape as the first opening, the first concave portion has a first side wall and a second side wall opposite to the first side wall, and is located on the first side wall and a bottom between the second side wall; 407 forms a first bump on the first side wall of the first recess; 408 forms a second bump on the second side wall of the first recess; 409 forms a light emitting unit on the first recess 410 forming a convex lens on the second substrate; and 411 disposing the convex lens and the second substrate on the light-emitting unit, and vertically aligning the convex lens and the light-emitting unit. It should be noted that the flow chart shown in FIG. 4 is for illustration purposes only, and its intention is not to limit the steps to a specific order. According to different implementations, different sequences of steps 401 to 411 may be arranged.

Referring to FIGS. 5-26 , FIGS. 5-26 illustrate methods for fabricating light-emitting devices according to certain embodiments of the present disclosure. 5 to 26 are sectional views along line AA in FIG. 1 .

Step 401 includes forming a first conductive layer 310 on a first substrate 110 . As shown in FIG. 5, the first substrate 110 may include a substrate 111, a dielectric layer 112, a transistor 210, a capacitor 220, an interlayer dielectric structure 230, a connection structure 240, a dielectric layer 310, and a planar layer 320. The above-mentioned components are similar The light-emitting device 100 is described above, so it will not be repeated here. As shown in FIG. 6 , the first conductive layer 310 is formed on the first substrate 110 . In some embodiments, a deposition technique is used to form the first conductive layer 310 on the top surface of the first substrate 110, such as but not limited to atomic layer deposition (Atomic Layer Deposition, ALD), chemical vapor deposition (Chemical Vapor Deposition, CVD) ), physical vapor deposition (Physical Vapor Deposition, PVD), sputtering (sputtering), electroplating (plating), laser thermal imaging (Laser Induced Thermal Imaging, LITI), inkjet printing (inkjet printing), shadow mask (shadow mask) Or deposition techniques such as wet coating. In some embodiments, the method 400 further includes forming an etch stop layer 311 between the first substrate 110 and the first conductive layer 310 and forming an etch stop layer 311 surrounded by the etch stop layer 311 and electrically connecting the first conductive layer 310 and the first substrate 110 The conductive plug 246. In some embodiments, deposition techniques are used to form the etch stop layer 311 on the top surface of the first substrate 110 .

As shown in FIG. 7, step 402 includes forming a dielectric layer 324 on the first conductive layer 310, step 403 includes forming a second conductive layer 325 on the dielectric layer 324, and step 404 includes forming a second electrode layer 326 on the first conductive layer 310. on the second conductive layer 325 . In some embodiments, the dielectric layer 324 is formed on the top surface of the first conductive layer 310 using a deposition technique. In some embodiments, a deposition technique is used to form the second conductive layer 325 on the top surface of the dielectric layer 324 . In some embodiments, a deposition technique is used to form the second electrode layer 326 on the top surface of the second conductive layer 325 . In some embodiments, forming the first bump seat 321 , the second bump seat 322 and the third bump seat 323 includes forming a dielectric layer 324 and a second conductive layer stacked on the first conductive layer 310 in sequence. 325 and the second electrode layer 326.

As shown in FIGS. 8 to 12 , step 405 includes patterning the second electrode layer 326 , the second conductive layer 325 and the dielectric layer 324 to form a first opening 502 exposing the first conductive layer 326 . In some embodiments, as shown in FIG. 8 , a photoresist layer 501 is formed on the second electrode layer 326 . In some embodiments, the photosensitive layer 501 is coated on the top surface of the second electrode layer 326 . In some embodiments, the photosensitive layer 501 is formed by spin coating or spray coating. In some embodiments, the photosensitive layer 501 may include a positive photoresist or a negative photoresist. In some embodiments, the photosensitive layer 501 may include organic materials and inorganic materials. In certain embodiments, the organic material may include, for example, phenol formaldehyde resins, epoxy resins, ethers, amines, rubber, acrylic, acrylic resins, acrylic epoxy resins, acrylic melamines. In some embodiments, the inorganic materials may include, for example, metal oxides and silicides. In some embodiments, the photosensitive layer 501 may comprise a layer composed of a material. In some embodiments, the photosensitive layer 501 may include several layers composed of several different materials, for example, an organic material layer is stacked on an inorganic material layer.

In some embodiments, the photosensitive layer 501 is further patterned by an etching process so that a part of the photosensitive layer 501 is removed, and the remaining part of the photosensitive layer 501 is used to position the first bump seat 321 as shown in FIG. 2 And the second bump seat 322 , and the part where the photosensitive layer 501 is removed is used to set the light emitting unit 350 shown in FIG. 2 in subsequent steps. In some embodiments, the remaining part of the photosensitive layer 501 is also used to position the third bump seat 323 as shown in FIG. 2 , and the removed part of the photosensitive layer 501 is also used to form 2 shows the second recess 361. In some embodiments, the pattern of the photosensitive layer 501 is designed for forming the first bump seat 321 and the second bump seat 322 arranged in an array.

In some embodiments, as shown in FIG. 9, patterning is carried out by dry etching, so that the photosensitive layer 501 is patterned, so that a part of the photosensitive layer 501, a part of the second electrode layer 326 and a part of the second conductive layer 325 are removed to form a first groove 502 and a second groove 503 . In some embodiments, viewed from a cross-sectional view, there is a radius angle σ4 between the sidewall and the bottom surface of the photosensitive layer 501 , and the range of the radius angle σ4 is 60 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional view, the first groove 502 and the second groove 503 are respectively U-shaped. In some embodiments, viewed from a cross-sectional view, there is a radius angle σ5 between the sidewall and the bottom surface of the second conductive layer 325 , and the range of the radius angle σ5 is 10 degrees to 90 degrees.

In some embodiments, as shown in FIG. 10 , patterning is performed by wet etching, and photosensitive layer 501 is patterned such that a portion of photosensitive layer 501 , a portion of second electrode layer 326 and a portion of second conductive layer 325 are removed. By removing, the first groove 502 and the second groove 503 are formed. In some embodiments, the patterned second electrode layer 326 and the second conductive layer 325 may undergo undercut (not shown). In some embodiments, viewed from a cross-sectional view, there is a radius angle σ6 between the sidewall and the bottom surface of the photosensitive layer 501 , and the radius angle σ6 ranges from 45 degrees to 90 degrees. In some embodiments, the radius angle σ6 ranges from 55 degrees to 80 degrees viewed from the cross-sectional view. In some embodiments, viewed from a cross-sectional view, there is a radius angle σ7 between the sidewall and the bottom surface of the second conductive layer 325 , and the radius angle σ7 ranges from 10 degrees to 90 degrees. In some embodiments, the radius angle σ5 formed by the dry etching process is larger than the radius angle σ7 formed by the wet etching process.

In some embodiments, as shown in FIG. 11, a part of the dielectric layer 324 is further removed by an etching process, and the remaining second electrode layer 326, the second conductive layer 325 and the dielectric layer 324 form a mutual The first bump seat 321 and the second bump seat 322 are separated to form a first opening 504 between the first bump seat 321 and the second bump seat 322 . In some embodiments, a portion of the first conductive layer 310 is exposed between the first bump seat 321 and the second bump seat 322 . In some embodiments, a portion of the dielectric layer 324 is removed using a dry etching process. In some embodiments, viewed from a cross-sectional view, a radius angle σ1 is formed between the sidewall 3212 and the lower surface of the first bump seat 321 , and the radius angle σ1 ranges from 10 degrees to 90 degrees. In some embodiments, a radius angle σ2 is formed between the sidewall 3222 and the lower surface of the second bump seat 322 from a cross-sectional view, and the radius angle σ2 ranges from 10 degrees to 90 degrees.

In some embodiments, the patterned second electrode layer 326, the second conductive layer 325, and the dielectric layer 324 also form a third bump seat 323 separated from the second bump seat 322, and form the second bump seat 323. The second opening 505 between the block seat 322 and the third protrusion seat 323 . The first opening 504 and the second opening 505 are separated from each other. In some embodiments, the first opening 504 and the second opening 505 are formed simultaneously. In some embodiments, a portion of the first conductive layer 310 is exposed between the third bump seat 323 and the second bump seat 322 . In some embodiments, a radius angle σ3 is formed between the sidewall 3232 and the lower surface of the third bump seat 323 from a cross-sectional view, and the radius angle σ3 ranges from 10 degrees to 90 degrees. In some embodiments, the first bump seat 321 , the second bump seat 322 and the third bump seat 323 separated from each other are formed on the first conductive layer 310 .

In some embodiments, as shown in FIG. 12 , the photosensitive layer 501 is removed. In some embodiments, after the photosensitive layer 501 is removed, the upper surface 3211 of the first bump seat 321 , the upper surface 3221 of the second bump seat 322 and the upper surface 3231 of the third bump seat 323 are exposed. In some embodiments, the first opening 504 and the second opening 505 have the same depth.

As shown in FIG. 13 , step 406 includes forming the first electrode layer 330 on the first opening 504 and the second electrode layer 326 to form the first recess 331 having the same shape as the first opening 504 . The first recess 331 has a first sidewall 332 , a second sidewall 333 opposite to the first sidewall 332 , and a bottom 334 between the first sidewall 332 and the second sidewall 333 . In some embodiments, the first electrode layer 330 is also formed in the second opening 505 . In some embodiments, conformal deposition is performed to form the first electrode layer 330 on the first opening 504, the upper surface 3211 and the side surface 3212 of the first bump seat 321, and the upper surface 3221 and the second bump seat 322. The first side 3221 and the second side 3223 .

In some embodiments, the method 400 further includes conformally depositing the first electrode layer 330 on the second opening 505 and the upper surface 3231 and the side surface 3232 of the third bump seat 323 . In some embodiments, the first electrode layer 330 has a concave portion 360 formed between the second opening 505 and the third bump seat 323 , and the concave portion 360 has the same shape as the second opening 505 . In some embodiments, the first electrode layer 330 is continuously formed on the first opening 504 , the second opening 505 , the first bump seat 321 , the second bump seat 322 and the third bump seat 323 .

In some embodiments, as shown in FIGS. 14 to 16 , the method 400 further includes removing the first electrode layer 330 located at the second opening 505 . In some embodiments, the concave portion 360 of the first electrode layer 330 is removed. In some embodiments, as shown in FIG. 14 , a photosensitive layer 510 is formed on the first electrode layer 330 , and the photosensitive layer 510 located in the concave portion 360 is removed. In some embodiments, the photosensitive layer 510 is coated on the top surface of the first electrode layer 330 and the first concave portion 331 and the concave portion 360, and the photosensitive layer 510 is patterned so that the concave portion 360 of the first electrode layer 330 is separated from the photosensitive layer. 510 exposed. In some embodiments, the photosensitive layer 510 is formed by spin coating or spray coating. In some embodiments, the photosensitive layer 510 may include a positive photoresist or a negative photoresist. In some embodiments, the photosensitive layer 510 is patterned by an etching process so that a part of the photosensitive layer 510 is removed, and the removed part of the photosensitive layer 510 is used in subsequent steps to form the first layer shown in FIG. Two recesses 361 .

In some embodiments, as shown in FIG. 15 , patterning is performed by an etching process to remove the first electrode layer 330 exposed from the photosensitive layer 510 to form the groove 511 . In some embodiments, the patterning is performed by wet etching, and the recess 511 is formed after removing the concave portion 360 of the first electrode layer 330 .

In some embodiments, as shown in FIG. 16 , the photosensitive layer 510 is removed, exposing the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323 , and part of the first metal layer. 310. In some embodiments, the surrounding of the groove 511 includes the first electrode layer 330 , the second bump seat 322 , the third bump seat 323 and the first metal layer 310 .

In some embodiments, as shown in FIGS. 17 to 18 , the method 400 further includes patterning the first conductive layer 310 exposed from the groove 511 to form the second recess 361 . In some embodiments, as shown in FIG. 17 , a photosensitive layer 520 is formed above the first electrode layer 330 , and the photosensitive layer 520 located above the first electrode layer 330 in the groove 511 is removed. In some embodiments, the photosensitive layer 520 is in contact with the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323 . In some embodiments, the photosensitive layer 510 is coated on the top surface of the first electrode layer 330 and the first recess 331 and the groove 511, and the photosensitive layer 520 is patterned so that the first electrode layer 330 in the groove 511 The photosensitive layer 520 is exposed, and then the first conductive layer 310 located in the groove 511 is removed. In some embodiments, the photosensitive layer 520 is formed by spin coating or spray coating. In some embodiments, the photosensitive layer 520 may include a positive photoresist or a negative photoresist.

In some embodiments, the patterning is performed by dry etching to remove the exposed first conductive layer 310 from the groove 511 . In some embodiments, the first conductive layer 310 is patterned so that the depth of the second recess 361 is greater than the depth of the first recess 331 . In some embodiments, the first conductive layer 310 is patterned to expose the etch stop layer 311 from the second recess 361 .

In some embodiments, as shown in FIG. 18 , the photosensitive layer 520 is removed to form the second recess 361 . In some embodiments, after removing the photosensitive layer 520, the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323, part of the first metal layer 310, and part of the etching are exposed. stop layer 311 .

As shown in FIG. 19 , step 407 includes forming the first protrusion 341 on the first sidewall 332 of the first recess 331 , and step 408 includes forming the second protrusion 342 on the second sidewall 333 of the first recess 331 . In some embodiments, the first bump 341 and the second bump 342 are formed at the same time. In some embodiments, the bottom 334 of the first recess 331 is exposed between the first bump 341 and the second bump 342 . In some embodiments, the second protrusion 342 is also formed in the second recess 361 and on the third protrusion 323 . In some embodiments, the second protrusion 342 fills up the second recess 361 .

As shown in FIG. 20 , step 409 includes forming a light emitting unit 350 between the bottom 334 of the first recess 331 of the first electrode layer 330 and between the first bump 341 and the second bump 342 . In some embodiments, the light emitting unit 350 is formed by conformal deposition. In some embodiments, the light emitting unit 350 is in contact with the first electrode layer 330 , the first bump 341 and the second bump 342 . In some embodiments, a carrier injection layer 351 , a carrier transport layer 352 , an organic light emitting layer 353 , a carrier transport layer 354 and a second electrode 355 are sequentially formed on the bottom portion 334 .

In some embodiments, as shown in FIG. 21 , the method 400 further includes forming a cover layer 380 on the first bump 341 and the second bump 342 and the light emitting unit 350 . In some embodiments, the capping layer 380 is formed using a deposition technique. In some embodiments, the upper surface of the cover layer 380 is planarized.

In some embodiments, as shown in FIGS. 22-24 , step 410 includes forming a convex lens 390 on the second substrate 384 . In some embodiments, a plurality of convex lenses 390 are formed on the second substrate 384 . A plurality of convex lenses 390 are spaced apart from each other. In some embodiments, as shown in FIG. 22 , a silicon oxide layer 383 is formed on the second substrate 384 , and a lens material layer 393 is formed on the silicon oxide layer 383 . In some embodiments, the lens material is coated on the silicon oxide layer 383 to form the lens material layer 393 . The lens material includes organic materials, such as but not limited to the commercially available product SU8. In some embodiments, as shown in FIG. 23 , the lens material layer 393 is patterned such that a portion of the lens material layer 393 is removed. In some embodiments, the portion of the lens material layer 393 corresponding to the second concave portion 361 is removed. In some embodiments, the patterned lens material layer 393 includes positions corresponding to the light emitting units 350 . In some embodiments, as shown in FIG. 24 , the lens material layer 393 is formed into a convex lens 390 . In some embodiments, the lens material layer 393 is formed into a convex lens 390 having a bottom surface 391 and a convex surface 392 , the bottom surface and the convex surface have an included angle θ, and the included angle ranges from 20° to 50°. In some embodiments, the patterned lens material layer 393 is subjected to photoacid reaction and thermal reflow to form the convex lens 390 .

In some embodiments, as shown in FIG. 25 , the method 400 further includes forming a filler layer 382 on the covering layer 381 . In some embodiments, the filler layer 382 is formed on the cover layer 381 by deposition technique or coating method. In some embodiments, the filler layer 382 formed on the covering layer 381 is not fully cured.

In some embodiments, as shown in FIG. 26 , step 411 includes disposing the convex lens 390 and the second substrate 384 on the light emitting unit 350 , and vertically aligning the convex lens 390 and the light emitting unit 350 . In some embodiments, after turning over the second substrate 384 so that the convex surface 392 of the convex lens 390 protrudes from the bottom surface 391 toward the light emitting unit 350, the convex lens 390 under the second substrate is vertically aligned with the corresponding light emitting unit 350, The convex lens 390 and the filler layer 382 are brought close to each other until the convex surface 392 is completely in contact with the filler layer 382 . In some embodiments, the filler layer 382 is cured after the filler layer 382 surrounds the convex surface 392 of the lenticular lens 390 . In some embodiments, the filler layer 382 is in contact with the convex surface 392 of the convex lens 390 and the silicon oxide layer 383 . In some embodiments, the method 400 produces the light emitting device 100 as shown in FIG. 2 .

Therefore, an embodiment of the present disclosure provides a light-emitting device, including a substrate; a first conductive layer disposed on the substrate; a first bump seat disposed on the first conductive layer; a second bump The block seat is arranged on the first conductive layer and separated from the first bump seat; a first electrode layer is arranged on the first bump seat, the first conductive layer and the second bump seat, the first An electrode layer includes a side wall of the first bump seat, a side wall of the second bump seat, and a first recess between the first bump seat and the second bump seat; a first bump is disposed on the On the first bump seat and at least a part of the first concave portion; a second bump is disposed on the second bump seat and at least a part of at least a part of the first concave portion; a light emitting unit is formed on the The first concave part is located between the first protruding block and the second protruding block; and a convex lens is arranged on the light emitting unit and vertically aligned with the light emitting unit, the convex lens has a bottom surface and a convex surface, and the convex surface faces the light emitting unit The unit is convex, and there is an included angle between the bottom surface and the convex surface, and the included angle ranges from 20° to 50°.

An embodiment of the present disclosure provides a light-emitting device, comprising a pixel array including a first pixel, a second pixel spaced apart from the first pixel, and a concave portion located between the first pixel and the second pixel. Between pixels; a first convex lens is arranged on the first pixel and vertically aligned with the first pixel; and a second convex lens is arranged on the second pixel and separated from the first convex lens (390a). Wherein the first pixel includes a first bump seat; a second bump seat separated from the first bump seat; a first bump is arranged on the first bump seat and covers the first bump At least a part of an upper surface and a side wall of the block seat; a second bump is arranged on the second bump seat and covers at least a part of an upper surface and a side wall of the second bump seat A part, the side wall of the first bump seat is opposite to the side wall of the second bump seat; an electrode layer is arranged between the first bump and the second bump; and a light emitting unit It is arranged on the electrode layer between the first bump and the second bump. Wherein the second pixel includes a third bump seat separated from the second bump seat, the recess is arranged between the second bump seat and the third bump seat, and the second bump fills up The recess extends to cover the third bump seat.

An embodiment of the present disclosure provides a method of manufacturing a light-emitting device, comprising forming a first conductive layer on a first substrate; forming a dielectric layer on the first conductive layer; forming a second conductive layer On the dielectric layer; forming a first electrode layer on the second conductive layer; patterning the first electrode layer, the second conductive layer and the dielectric layer to form a first electrode layer exposing the first conductive layer an opening; a second electrode layer is formed on the first opening and the first electrode layer to form a first recess having the same type as the first opening, the first recess has a first side wall and is opposite to the The second side wall of the first side wall, and a bottom between the first side wall and the second side wall; forming a first protrusion on the first side wall of the first recess; forming a second a protruding block on the second side wall of the first recess; a light emitting unit is formed between the bottom of the first recess and the first protruding block and the second protruding block; a convex lens is formed on a second substrate; and disposing the convex lens and the second substrate on the light-emitting unit, and vertically aligning the convex lens with the light-emitting unit, wherein the convex lens has a bottom surface and a convex surface, the convex surface protrudes toward the light-emitting unit, and the There is an included angle between the bottom surface and the convex surface, and the included angle ranges from 20° to 50°.

The foregoing summary outlines features of some implementations so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should understand that the present disclosure can be easily used as a basis for designing or modifying other processes and structures to achieve the same purpose and/or achieve the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equal structure does not depart from the spirit and scope of the disclosure, and those skilled in the art can make various changes, substitutions and substitutions without departing from the spirit and scope of the disclosure.

Claims (10)

1. A lighting device comprising:

   a substrate;

   a first conductive layer is disposed on the substrate;

   a first bump seat is disposed on the first conductive layer;

   a second bump seat is disposed on the first conductive layer and separated from the first bump seat;

   A first electrode layer is disposed on the first bump seat, the first conductive layer and the second bump seat, and the first electrode layer includes a side wall located on the first bump seat, a a first recess between the side wall and the first lug seat and the second lug seat;

   A first bump is disposed on the first bump seat and at least a part of the first recess;

   a second protrusion is disposed on the second protrusion seat and at least a part of at least a part of the first recess;

   a light emitting unit is formed in the first recess and is located between the first bump and the second bump; and

   A convex lens is arranged on the light-emitting unit and vertically aligned with the light-emitting unit. The convex lens has a bottom surface and a convex surface. The convex surface is convex toward the light-emitting unit. There is an angle between the bottom surface and the convex surface. The angle ranges from 20° to 50°.
2. The lighting device of claim 1, further comprising:

   a third bump seat disposed on the first conductive layer and separated from the first bump seat and the second bump seat; and

   A second recess is formed between the second bump seat and the third bump seat, and the second bump fills up the second recess.
3. The light emitting device according to claim 2 , wherein viewed from a top view, the convex lens overlaps at least a part of the first bump seat and at least a part of the second bump seat, and is separated from the second concave portion.
4. The lighting device of claim 1, further comprising:

   a covering layer is disposed on the first bump, the second bump and the light emitting unit; and

   a filler layer is arranged between the covering layer and the convex lens,

   Wherein the convex lens has a first refractive index, the filler layer has a second refractive index, and the difference between the second refractive index and the first refractive index is less than 0.05.
5. The light emitting device as claimed in claim 4, wherein the cover layer has a third refractive index, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index.
6. A lighting device comprising:

   A pixel array includes a first pixel, a second pixel spaced apart from the first pixel, and a recess between the first pixel and the second pixel;

   a first convex lens is disposed on the first pixel and vertically aligned with the first pixel; and

   a second convex lens is disposed on the second pixel and separated from the first convex lens,

   Wherein the first pixel includes:

   a first bump seat;

   a second lug seat separate from the first lug seat;

   A first bump is disposed on the first bump seat and covers at least a part of an upper surface and a side wall of the first bump seat;

   A second protrusion is arranged on the second protrusion seat and covers at least a part of an upper surface and a side wall of the second protrusion seat, the side wall of the first protrusion seat and the first protrusion seat The side walls of the two bump seats are oppositely arranged;

   an electrode layer is disposed between the first bump and the second bump; and

   a light emitting unit is arranged on the electrode layer between the first bump and the second bump,

   Wherein the second pixel includes a third bump seat separated from the second bump seat, the recess is arranged between the second bump seat and the third bump seat, and the second bump fills up The recess extends to cover the third bump seat.
7. The light emitting device according to claim 6, wherein the electrode layer extends between the first bump and the sidewall of the first bump seat, and extends to the second bump and the second bump seat between the side walls.
8. The light-emitting device according to claim 6, wherein the light-emitting unit is elliptical, and the first convex lens has a bottom surface and a convex surface, the convex surface is convex toward the light-emitting unit, and there is a gap between the bottom surface and the convex surface Angle, the included angle ranges from 20° to 50°.
9. A method of preparing a light emitting device, comprising:

   forming a first conductive layer on a first substrate;

   forming a dielectric layer on the first conductive layer;

   forming a second conductive layer on the dielectric layer;

   forming a first electrode layer on the second conductive layer;

   patterning the first electrode layer, the second conductive layer and the dielectric layer to form a first opening exposing the first conductive layer;

   forming a second electrode layer on the first opening and the first electrode layer to form a first recess having the same shape as the first opening, the first recess has a first side wall and is opposite to the first side a second side wall of the wall, and a bottom located between the first side wall and the second side wall;

   forming a first bump on the first side wall of the first recess;

   forming a second bump on the second sidewall of the first recess;

   forming a light emitting unit between the bottom of the first recess and the first bump and the second bump;

   forming a convex lens on a second substrate; and

   disposing the convex lens and the second substrate on the light-emitting unit, and vertically aligning the convex lens and the light-emitting unit,

   Wherein the convex lens has a bottom surface and a convex surface, the convex surface protrudes toward the light emitting unit, and there is an included angle between the bottom surface and the convex surface, and the range of the included angle is 20° to 50°.
10. The method for preparing a light-emitting device as claimed in claim 9, further comprising:

    forming a covering layer between the convex lens and the convex lens; and

    forming a filler layer between the covering layer and the convex lens, and in contact with the convex lens,

    Wherein, the convex lens has a first refractive index, the filler layer has a second refractive index, the covering layer has a third refractive index, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to The third refractive index, and the difference between the first refractive index and the second refractive index is less than 0.05.

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