TW201509254A - Manufacturing method of substrate and manufacturing device of substrate - Google Patents

Abstract

To provide a manufacturing method of a substrate, which is a method to form the mask pattern on the supporting substrate for forming the thick metal pattern. Prepare a supporting substrate for forming the first linear pattern, and the second linear pattern which is coarser than the first linear pattern. Repeat the step of dropping/impacting/adhering the droplet of thin-film material and the step of curing the dropped/impacted/adhered thin-film material many times. The number of repeating the step for forming the first linear pattern is greater than that for forming the second linear pattern.

Description

Substrate manufacturing method and substrate manufacturing apparatus

The present invention relates to a substrate manufacturing method and a substrate manufacturing apparatus for forming a plurality of linear patterns having different widths on a surface of a support substrate.

A technique of forming a mask pattern on the surface of a support substrate and plating a metal on a region where the mask pattern is not formed and exposed is known (Patent Document 1). The mask pattern is formed, for example, by exposing and developing a photosensitive dry film. If the height of the metal to be plated exceeds the height of the mask pattern, the metallized metal exceeds the line width previously set by the mask pattern to cause lateral diffusion. By making the mask pattern thicker than the metal to be plated, lateral diffusion can be prevented.

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Patent Laid-Open Publication No. 2011-228605

When a thick metal pattern having a thickness of 100 μm or more, for example, a thick copper pattern is formed, it is necessary to make the mask pattern thicker than 100 μm. However, it is difficult to form such a thick mask pattern by exposure and development. It is an object of the present invention to provide a method of forming a mask pattern for forming a thick metal pattern on a support substrate. Another object of the present invention is to provide a substrate manufacturing apparatus which can be applied to a method of forming the mask pattern.

According to still another aspect of the present invention, a substrate manufacturing method includes: a process of preparing a support substrate in which a first linear pattern and a second linear pattern thicker than the first linear pattern are to be formed; and the support a region in which the first linear pattern and the second linear pattern are to be formed on the substrate, and a process of performing a step of causing the thin film material to be dropletized and then bucking and curing the stretched film material is repeated for a plurality of times The number of repetitions of the above-described steps of forming the first linear pattern is larger than the number of repetitions of the above-described steps for forming the second linear pattern. Further, there is provided a substrate manufacturing apparatus comprising: a carrier, a support substrate that holds a first linear pattern and a second linear pattern that is thicker than the first linear pattern; and the nozzle head has an orientation a plurality of nozzle holes for discharging a photocurable liquid film material on the support substrate on the stage; and a moving mechanism for moving one of the support substrate and the nozzle head relative to the other; a light source that irradiates the liquid film material adhered to the support substrate held on the stage to the curing light; and a control device that controls the nozzle head, the light source, and the moving mechanism; and the first linear pattern The target value of the height is equal to the target value of the height of the second linear pattern; the control device controls the nozzle head, the light source, and the moving mechanism, and repeats the first step a plurality of times, the first step is one side When one of the nozzle head and the substrate is moved relative to the other, a liquid film material is discharged from the nozzle head, and a liquid film material is adhered to the surface of the substrate to form a first linear pattern and a second pattern. In the region of the linear pattern, the film material is irradiated with light from the light source to the liquid material adhering to the substrate to cure the film material, and the second step is performed at least once, and the nozzle head is made in the second step. And moving one of the substrates to the other, and discharging the liquid film material from the nozzle head to form a liquid The film material adheres to a region of the surface of the substrate to form the first linear pattern, and the film material is cured from the light source to the liquid film material adhering to the substrate to cure the film material, and the film material is not cured. The liquid film material adheres to a region where the second linear pattern is to be formed.

The number of repetitions of the steps for forming the first linear pattern is more than that for the shape The number of repetitions of the aforementioned steps in the second linear pattern. If the number of repetitions of the steps is the same, the relatively thin first line pattern becomes lower than the second line pattern. The height of the first linear pattern and the second linear pattern can be aligned by the number of repetitions of the step of forming the first linear pattern being larger than the number of repetitions of the above-described steps for forming the second linear pattern.

10‧‧‧Support substrate

11‧‧‧The area where the first linear pattern should be formed

12‧‧‧The area where the second line pattern should be formed

13‧‧‧The area of the third linear pattern should be formed

15‧‧‧ areas where mask patterns should be formed

20‧‧‧ Film material

31‧‧‧1st floor

32‧‧‧2nd floor

33‧‧‧3rd floor

41‧‧‧1st line pattern

42‧‧‧2nd line pattern

43‧‧‧3rd linear pattern

45‧‧‧Metal pattern

50‧‧‧ platform

51‧‧‧Mobile agencies

52‧‧‧stage

53‧‧‧Nozzle unit

54‧‧‧Camera

60‧‧‧Control device

70‧‧‧support board

71‧‧‧Nozzle head

72‧‧‧ Hardening light source

73‧‧‧Nozzle hole

80‧‧‧ moving into the station

81‧‧‧ Temporary positioning station

82‧‧‧ coating station

83‧‧‧ hardening station

84‧‧‧Transporting device

85‧‧‧1st conveying roller

86‧‧‧2nd conveying roller

87‧‧‧block

88‧‧‧ Hardening light source

90‧‧‧ Guides

91, 92‧‧‧ Lifter

Fig. 1 is a plan view of a support substrate used in a substrate manufacturing method according to an embodiment.

FIGS. 2A to 2D are cross-sectional views showing the intermediate stage of manufacture of the substrate manufactured by the substrate manufacturing method according to the embodiment.

Fig. 2E is a cross-sectional view showing a substrate manufactured by the substrate manufacturing method according to the embodiment, in the middle of the manufacturing process, and Fig. 2F is a cross-sectional view of the substrate manufactured by the substrate manufacturing method according to the embodiment.

Fig. 3 is a schematic view showing a linear pattern for explaining the number of repetitions of the steps for forming the respective line patterns.

Fig. 4 is a graph showing an example of the relationship between the width and height of the linear pattern and the number of repetitions n of the step.

Fig. 5 is a schematic view of a coating station of a substrate manufacturing apparatus according to an embodiment.

Fig. 6A is a perspective view of the nozzle unit, and Fig. 6B is a bottom view of the nozzle unit.

Fig. 7 is a plan view of a stage and a nozzle unit of the substrate manufacturing apparatus according to the embodiment.

Fig. 8 is a schematic overall view of a substrate manufacturing apparatus according to an embodiment.

Referring to Fig. 1 and Fig. 2A to Fig. 2F, a method of manufacturing a substrate according to the embodiment will be described. First, a support substrate to be a substrate to be patterned is prepared.

The first graph shows a plan view of the support substrate 10 used in the substrate manufacturing method according to the embodiment. A region 15 where a mask pattern should be formed is defined on the surface of the support substrate 10. The mask pattern to be formed has a plurality of line patterns having different widths. For example, the region 15 in which the mask pattern is to be formed includes a region 11 (hereinafter referred to as a first region) in which the first linear pattern is to be formed, and a region 12 in which the second linear pattern is to be formed (hereinafter referred to as a second region). And a region 13 (hereinafter referred to as a third region) in which a third linear pattern is to be formed. The width of the first region 11 is the smallest, and the width of the third region 13 is the thickest. The target values of the heights of the first linear pattern, the second linear pattern, and the third linear pattern are all equal.

2A to 2F are cross-sectional views showing the stage of manufacture in the substrate manufactured by the substrate manufacturing method according to the embodiment. Fig. 2A to Fig. 2F correspond to the cross section of the single-dot chain line 2-2 of Fig. 1.

As shown in FIG. 2A, the first region 11, the second region 12, and the third region 13 are defined on the surface of the support substrate 10. The film material 20 is dropletized and applied to the first region 11, the second region 12, and the third region 13. Thereafter, the film material 20 coated on the support substrate 10 is cured.

The distribution density of the droplet impact point is in the first region 11 and the second region 12. All of the same in the third area 13 are the same. For example, a photocurable resin can be used as the liquid film material 20. The film material 20 is cured by irradiating the film material 20 coated on the support substrate 10 with light for curing, for example, ultraviolet rays. Thereby, the first layer 31 constituting a part of the first linear pattern is formed in the first region 11. Similarly, in the second region 12 and the third region 13, a second layer 32 constituting a part of the second linear pattern and a third layer 33 constituting a part of the third linear pattern are formed. The degree of hardening at this stage need not necessarily be approximately 100%. The degree of hardening can be obtained as follows: the film material 20 does not flow in the in-plane direction, and the liquid film material 20 can be further coated on the hardened film material 20.

As shown in FIG. 2B, the film material 20 is dropletized and applied to the first region 11, the second region 12, and the third region 13 of the support substrate 10, and is cured, whereby the first layer 31 is formed. The first layer 31, the second layer 32, and the third layer 33 of the second layer are formed on the second layer 32 and the third layer 33, respectively.

As shown in FIG. 2C, the step of applying the droplets of the film material 20 to the first region 11, the second region 12, and the third region 13 of the support substrate 10 and then hardening them is repeated. Thereby, the first linear pattern 41 composed of the plurality of first layers 31 is formed in the first region 11. Similarly, in the second region 12 and the third region 13, a second linear pattern 42 composed of a plurality of second layers 32 and a third linear pattern 43 composed of a plurality of third layers 33 are formed. At this stage, the number of layers of the first layer 31, the number of layers of the second layer 32, and the number of layers of the third layer 33 are all equal.

The film material 20 coated on the first layer 31 is completely hardened to The period of the period spreads laterally. Therefore, the side surface of the first linear pattern 41 is inclined, and the cross section thereof has a shape close to an upright trapezoid. The side faces of the second linear pattern 42 and the third linear pattern 43 are also inclined in the same manner, and the cross section thereof has a shape close to an upright trapezoid.

The width of the side inclined portion hardly depends on the width of the line pattern. Therefore, the widths of the portions of the first linear pattern 41, the second linear pattern 42, and the side surface of the third linear pattern 43 which are inclined are substantially equal. In the film material constituting the linear pattern, the finer the line width, the larger the ratio of the film material used for the side inclined portion. In the stage shown in FIG. 2C, the thinnest first linear pattern 41 has the lowest height, and the thickest third linear pattern 43 has the highest height. Fig. 2C is a cross-sectional view showing the point at which the height of the third linear pattern 43 reaches the target height.

As shown in FIG. 2D, the film material 20 is dropped and applied to the upper surface of the first linear pattern 41 and the upper surface of the second linear pattern 42 to be cured. The film material 20 is not applied to the upper surface of the third linear pattern 43. Thereby, the heights of the first linear pattern 41 and the second linear pattern 42 increase. When the height of the second linear pattern 42 and the height of the third linear pattern 43 become almost equal, the application of the film material 20 to the upper surface of the second linear pattern 42 is completed. At this time, the first linear pattern 41 is lower than the second linear pattern 42 and the third linear pattern 43.

As shown in FIG. 2E, the film material 20 is dropped and applied to the upper surface of the first linear pattern 41 to be cured. The film material 20 is not applied to the upper surfaces of the second linear patterns 42 and the third linear patterns 43. Thereby, the height of the first linear pattern 41 is increased. The height of the first linear pattern 41 and When the heights of the second linear pattern 42 and the third linear pattern 43 are almost equal, the film material 20 is attached to the upper surface of the first linear pattern 41.

As shown in FIG. 2F, the first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 are not formed on the surface of the support substrate 10, and the exposed surface of the support substrate 10 is exposed. Stacking metal. Thereby, the metal pattern 45 is formed. The metal pattern 45 uses, for example, copper.

In the method according to the embodiment, the film material 20 is dropletized and applied to a region of the support substrate 10 where the linear pattern is to be formed, and the coated film material 20 is cured. The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 are formed by repeating the coating and curing step (hereinafter simply referred to as "step"). Focusing on the first linear pattern 41 and the second linear pattern 42, the number of repetitions of the step for forming the relatively thin first linear pattern 41 is larger than that for forming the relatively thick second linear pattern 42. The number of repetitions of the step. Focusing on the second linear pattern 42 and the third linear pattern 43, the number of repetitions of the step for forming the relatively thin second linear pattern 42 is larger than that for forming the relatively thick third linear pattern 43. The number of repetitions of the step.

Thus, by setting the number of repetitions of the steps, it is possible to align the heights of the plurality of line patterns having different thicknesses. Even if the line pattern is raised, the heights of the plurality of line patterns having different widths can be aligned. Therefore, the above substrate manufacturing method can be suitably applied to the production of a substrate having a thick copper pattern having a thickness of 100 μm or more.

The preferred number of repetitions of the steps for forming the respective line patterns will be described with reference to FIG.

When n is the number of repetitions of the step for forming the first linear pattern 41, it is preferable to set the number of repetitions n so as to satisfy the following conditions. The height H10 of the first linear pattern 41 when the number of repetitions of the step is n-1 is lower than the height H3 of the third linear pattern 43 (that is, the target height). When the number of repetitions of the step is n+1, the height H11 of the first linear pattern 41 becomes higher than the height H3 of the third linear pattern 43. When the number of repetitions n is set so as to satisfy the condition, the difference between the height H1 of the first linear pattern 41 and the height H3 of the third linear pattern 43 can be made small.

The preferred number of repetitions of the step for forming the second linear pattern 42 can also be set in the same manner as the preferred number of repetitions n of the step for forming the first linear pattern 41. Thereby, the difference between the height H2 of the second linear pattern 42 and the height H3 of the third linear pattern 43 can be made small.

There are usually two solutions for the number of repetitions n satisfying the above conditions. At this time, it is preferable to set the number of repetitions n of the steps to the number of repetitions of the height of the formed linear pattern closer to the target height.

Fig. 4 shows an example of the relationship between the width and height of the linear pattern and the number of repetitions n of the step. The horizontal axis represents the width of the linear pattern, and the vertical axis represents the height of the linear pattern. The numerical value n assigned to each solid line in Fig. 4 indicates the number of repetitions of the step. When the number of repetitions n of the fixing step is n, the height of the linear pattern becomes lower as the width of the linear pattern becomes narrower. As shown in Fig. 2C, this is because the proportion of the film material for the side inclined portion becomes high.

The target value of the height of the first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 (second image E) is Ht. In Figure 4 In the example shown, when the number of repetitions of the step of forming the first linear pattern 41 of the width W1 is 14, the height becomes the closest to the target height Ht. When the number of repetitions of the step of forming the second linear pattern 42 having the width W2 is 13, the height becomes closest to the target height Ht. When the number of repetitions of the step of forming the third linear pattern 43 having the width W3 is 12, the height thereof becomes closest to the target height Ht. In this manner, the number of repetitions n of the steps is set such that the height of the linear pattern becomes closest to the target height Ht, whereby the height of the linear pattern can be aligned.

The fifth graph shows a schematic view of a coating station of the substrate manufacturing apparatus according to the embodiment. The stage 52 is supported on the platform 50 via a moving mechanism 51. The stage 52 holds the support substrate 10 as a target for forming a film. A surface in which the surface parallel to the surface of the support substrate 10 is defined as an xy plane, and a normal direction of the surface of the support substrate 10 is defined as an xyz rectangular coordinate system in the z direction. A nozzle unit 53 and a camera 54 are supported above the stage 52. The moving mechanism 51 moves one of the support substrate 10 and the nozzle unit 53 in the x direction and the y direction with respect to the other. In the fifth diagram, the configuration in which the nozzle unit 53 is stationary with respect to the stage 50 to move the support substrate 10 is shown. Conversely, the support unit 10 may be stationary and the nozzle unit 53 may be moved.

The nozzle unit 53 has a nozzle head opposed to the support substrate 10. The photocurable liquid film material is discharged from a plurality of nozzle holes formed in the nozzle head toward the support substrate 10, and then discharged. The timing of discharging the film material from the nozzle holes is controlled by the control device 60. The camera 54 captures an alignment mark formed on the support substrate 10 and transmits the image data to the control device 60.

Fig. 6A shows a side view of the nozzle unit 53, and Fig. 6B shows a bottom view of the nozzle unit 53. Two nozzle heads 71 and three light-curing light sources 72 are assembled to the support plate 70. Two nozzle heads 71 are arranged side by side in the y direction. A curing light source 72 is disposed between the two nozzle heads 71 and outside the nozzle head 71. Focusing on one nozzle head 71, a curing light source 72 is disposed on each of the positive side and the negative side of the nozzle head 71 in the y direction.

A plurality of nozzle holes 73 arranged at equal intervals in the x direction are formed in each nozzle head 71. In FIGS. 6A and 6B, an example in which a plurality of nozzle holes 73 of the nozzle heads 71 are arranged in two rows is shown. The two nozzle heads 71 are shifted from each other in the x direction and fixed. The nozzle holes 73 formed in a total of four rows formed on the two nozzle heads 71 are distributed at equal intervals in the x direction as a whole.

The curing light source 72 irradiates the liquid thin film material applied to the support substrate 10 (Fig. 5) with light for curing. For example, when the film material is discharged from the nozzle head 71 while moving the support substrate 10 (Fig. 5) in the y direction, the film material applied to the support substrate 10 is further downstream from the nozzle head 71 than the film material. The light of the hardening light source 72 disposed on the side is hardened.

In FIG. 6 and FIG. 6B, the number of the nozzle heads 71 is two. However, the number of the nozzle heads 71 to be mounted may be one or three or more. The hardening light source 72 can be disposed on the downstream side of each of the nozzle heads 71. When the film material is applied while moving the support substrate 10 in the y direction, the curing light source 72 is disposed on each side of the nozzle head 71. When the number of the nozzle heads 71 is increased, the nozzle holes 73 are equally spaced in the x direction. The pitch becomes smaller. Thereby, the resolution of the linear pattern to be formed can be improved.

Fig. 7 is a plan view showing the stage 52 and the nozzle unit 53 of the substrate manufacturing apparatus according to the embodiment. The support substrate 10 is held on the stage 52. A region 15 where a mask pattern should be formed is defined on the surface of the support substrate 10.

A nozzle unit 53 is disposed above the support substrate 10. The nozzle unit 53 includes a nozzle head 71 and a curing light source 72. The film material is discharged from the nozzle head 71 while the support substrate 10 is moved in the y direction by the moving mechanism 51, whereby the film material can be applied to the support substrate 10. The control device 60 controls the movement of the support substrate 10 according to the moving mechanism 51 and the discharge timing of the film material from the nozzle head 71. Thereby, the film material can be applied in the region 15 where the mask pattern should be formed. The pattern information of the area 15 where the mask pattern is to be formed is previously stored in the control device 60.

The support substrate 10 is shifted in the x direction, and the same process is repeated, whereby the film material can be applied to any region of the surface of the support substrate 10.

Fig. 8 is a schematic view showing the entirety of a substrate manufacturing apparatus according to an embodiment. The substrate manufacturing apparatus according to the embodiment includes a loading station 80, a temporary positioning station 81, a coating station 82, a hardening station 83, and a conveying device 84. Define the xyz rectangular coordinate system with the horizontal plane set to the xy plane and the vertical direction to the positive direction of the z-axis. The loading station 80, the temporary positioning station 81, the coating station 82, and the hardening station 83 are disposed in this order in the positive direction of the x-axis. The control device 60 controls the loading station 80, the temporary positioning station 81, the coating station 82, and the respective devices in the curing station 83 and the conveying device 84.

The first transport roller 85 transports the support substrate 10 to be processed from the loading station 80 to the temporary positioning station 81 in the positive direction of the x-axis. The front end of the support substrate 10 conveyed by the first transfer roller 85 comes into contact with the stopper 87, whereby the support substrate 10 is roughly positioned in relation to the conveyance direction.

The transport device 84 transports the support substrate 10 from the temporary positioning station 81 to the coating station 82 and from the coating station 82 to the curing station 83. The conveying device 84 includes a guide 90 and two lifters 91, 92. The lifters 91, 92 are guided by the guide 90 and moved in the x direction. The lifters 91, 92 have, for example, L-shaped support arms that are in contact with the bottom surface of the support substrate 10 and support the support substrate 10. One of the lifters 91 transports the support substrate 10 from the temporary positioning station 81 to the coating station 82, and the other lifter 92 transports the support substrate 10 from the coating station 82 to the hardening station 83.

As shown in FIG. 5, the coating station 82 includes a stage 50, a moving mechanism 51, and a stage 52. The nozzle unit 53 (Fig. 5) and the like are not shown in Fig. 8.

The second transfer roller 86 is disposed in the hardening station 83. The support substrate 10 processed by the coating station 82 is transported to the curing station 83 by the transfer device 84, and is mounted on the second transfer roller 86. The second transport roller 86 transports the support substrate 10 in the positive direction of the x-axis. A curing light source 88 is disposed above the transport path of the support substrate 10. The curing light source 88 irradiates the support substrate 10 conveyed by the second transfer roller 86 with light including a long-wave component that hardens the film material.

The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 as shown in FIG. 2E are formed in the coating station 82. Painted by In the hardening treatment by the light of the hardened light source 72 of the cloth station 82, the degree of hardening may not be sufficient. The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 formed at the coating station 82 are further cured at the curing station 83. Thereby, a sufficient degree of hardening can be obtained.

Correspondence information (Fig. 4) for determining the number of repetitions of the step by the width and height of the line pattern is stored in the control device 60. The control device 60 is based on the target value of the height of the linear pattern (the height Ht in FIG. 4), the target value of the width of the first linear pattern 41 (the width W1 in FIG. 4), and the target of the width of the second linear pattern. The value (the width W2 in FIG. 4), the target value of the width of the third linear pattern 43 (the width W3 in FIG. 4), and the correspondence relationship information (fourth image), and the formation of the first linear pattern 41, The number of repetitions n of the steps of the second linear pattern 42 and the third linear pattern 43.

The number of repetitions of the steps from the second drawing A to the second drawing C is equal to the number of repetitions of the step of forming the third linear pattern 43. The number of repetitions of the steps from the second drawing A to the second drawing D is equal to the number of repetitions of the step of forming the second linear pattern 42. The number of repetitions of the steps from the second drawing A to the second drawing E is equal to the number of repetitions of the step of forming the first linear pattern 41.

The control device 60 controls the nozzle head 71 and the moving mechanism 51 in accordance with the number of repetitions n of the steps of forming the respective line patterns and the pattern information. Thus, the number of repetitions of the steps is appropriately determined depending on the width of the line pattern, whereby a highly aligned line pattern can be formed.

The invention has been described in accordance with the above embodiments, but the invention is not Limited to this. For example, various changes, modifications, combinations and the like can be made apparent to those skilled in the art.

10‧‧‧Support substrate

11‧‧‧The area where the first linear pattern should be formed

12‧‧‧The area where the second line pattern should be formed

13‧‧‧The area of the third linear pattern should be formed

20‧‧‧ Film material

31‧‧‧1st floor

32‧‧‧2nd floor

33‧‧‧3rd floor

41‧‧‧1st line pattern

42‧‧‧2nd line pattern

43‧‧‧3rd linear pattern

Claims (5)

A substrate manufacturing method comprising: a process of preparing a support substrate in which a first linear pattern and a second linear pattern are formed thicker than the first linear pattern; and a first line shape in which the support substrate is to be formed a pattern in which the pattern and the second linear pattern are repeated, a process of performing a step of dropletizing the film material, and curing the stretched film material; and forming the first linear pattern The number of repetitions of the steps is more than the number of repetitions of the aforementioned steps for forming the second linear pattern. In the substrate manufacturing method according to the first aspect of the invention, wherein the number of repetitions of the step of forming the first linear pattern is represented by n, the number of repetitions n is set as follows: the number of repetitions of the step is set The first linear pattern formed for n-1 times is lower than the second linear pattern, and the first linear pattern formed by setting the number of repetitions of the step to n+1 times is higher than the second Linear pattern. The substrate manufacturing method according to claim 1 or 2, further comprising the step of forming the first linear pattern and the second linear pattern, and not forming the surface of the support substrate The area of the linear pattern and the second linear pattern causes the metal to accumulate. A substrate manufacturing apparatus comprising: a carrier, and a support substrate that holds a first linear pattern and a second linear pattern that is thicker than the first linear pattern; a nozzle head having a plurality of nozzle holes for discharging a photocurable liquid film material toward a support substrate held on the stage; and a moving mechanism for moving one of the support substrate and the nozzle head relative to the other; And irradiating the liquid film material adhered to the support substrate held on the stage to the curing light; and the control device controlling the nozzle head, the light source, and the moving mechanism; and the first linear pattern The target value of the height is equal to the target value of the height of the second linear pattern; the control device controls the nozzle head, the light source, and the moving mechanism, and repeats the first step a plurality of times, the first step When one of the nozzle head and the substrate moves relative to the other, the liquid film material is discharged from the nozzle head, and a liquid pattern of a first linear pattern and a second linear pattern is formed on the surface of the substrate. a film material, and the thin film material is applied to the liquid film material adhering to the substrate from the light source to illuminate the thin film to make the thin film Further, in the second step, while the one of the nozzle head and the substrate is moved relative to the other, the liquid film material is discharged from the nozzle head and formed on the surface of the substrate. The liquid film material is applied to the region of the first linear pattern, and the liquid material that adheres to the substrate from the light source is irradiated with light for curing to cure the film material, and the second line should be formed. Figure The liquid film material is not applied to the area of the case. The substrate manufacturing apparatus according to claim 4, wherein the control device stores correspondence information for determining the number of repetitions of the step from the width and height of the linear pattern, and according to the first linear pattern The target value of the height, the target value of the width of the first linear pattern, the target value of the width of the second linear pattern, and the correspondence relationship information, and the number of repetitions of the first step and the second step are obtained. repeat times.