KR20150018375A - Substrate manufacturing method and apparatus - Google Patents

Abstract

Provided is a method for forming a mask pattern for forming a thick metal pattern on a supporting substrate. The method comprises the steps of preparing a supporting substrate where a first linear pattern and a second linear pattern which is thicker than the first linear pattern are needed to be formed; repeating a sequence of carbonizing by forming a thin film material into liquid droplets on an area of the supporting substrate where the first linear pattern and the second linear pattern should be formed and curing the carbonized thin film material multiple times. The repeating number of the sequence for forming the first linear pattern is more than the repeating number of the sequence for forming the second linear pattern.

Description

[0001] Substrate manufacturing method and apparatus [

The present application claims priority based on Japanese Patent Application No. 2013-165739 filed on August 9, 2013. The entire contents of which are incorporated herein by reference.

The present invention relates to a substrate manufacturing method and a substrate manufacturing apparatus in which a plurality of linear patterns having different widths are formed on the surface of a supporting substrate.

There is known a technique of forming a mask pattern on the surface of a support substrate and plating the metal in an exposed region where no mask pattern is formed (Patent Document 1). The mask pattern is formed, for example, by exposing and developing a photosensitive dry film. When the height of the plated metal exceeds the height of the mask pattern, the plated metal is enlarged in the lateral direction beyond the line width previously set in the mask pattern. By making the mask pattern thicker than the metal to be plated, it is possible to prevent the mask pattern from expanding in the lateral direction.

Prior art literature

(Patent Literature)

Patent Document 1: Japanese Patent Laid-Open Publication No. 2011-228605

In the case of forming a thick metal pattern having a thickness of 100 mu m or more, for example, a thick copper pattern, the mask pattern should be thicker than 100 mu m. However, it is difficult to form such a thick mask pattern by exposure and development. It is an object of the present invention to provide a method of forming a mask pattern on a support substrate for forming a thick metal pattern. Another object of the present invention is to provide a substrate manufacturing apparatus applicable to a method of forming the mask pattern.

According to one aspect of the present invention,

Preparing a supporting substrate on which a first linear pattern and a second linear pattern wider than the first linear pattern are to be formed;

A step of dropping and landing a thin film material on an area of the support substrate on which the first linear pattern and the second linear pattern should be formed and curing the deposited thin film material a plurality of times

Lt; / RTI >

The number of repetitions of the procedure for forming the first linear pattern is larger than the number of repetitions of the procedure for forming the second linear pattern.

A stage for supporting a supporting substrate on which a first linear pattern and a second linear pattern wider than the first linear pattern are to be formed,

A nozzle head having a plurality of nozzle holes for ejecting a photo-curable liquid thin film material toward the support substrate supported on the stage;

A moving mechanism for moving one of the support substrate and the nozzle head relative to the other,

A light source for irradiating curing light onto the thin film material in a liquid state attached to a support substrate supported on the stage;

A controller for controlling the nozzle head, the light source,

Lt; / RTI &

The target value of the height of the first linear pattern is equal to the target value of the height of the second linear pattern,

The control device controls the nozzle head, the light source, and the moving mechanism,

A liquid thin film material is discharged from the nozzle head while one side of the nozzle head and the substrate are moved relative to the other side of the substrate so that the first linear pattern and the second linear pattern are formed on the surface of the substrate A first step of attaching a liquid thin film material and irradiating the liquid thin film material adhering to the substrate with curing light from the light source to cure the thin film material a plurality of times,

Also,

A liquid thin film material is discharged from the nozzle head while one side of the nozzle head and the substrate are moved to the other side so that a liquid thin film material And a curing light is irradiated from the light source to the liquid thin film material attached to the substrate to cure the thin film material and a liquid thin film material The second step of performing the second step of not attaching the substrate is performed at least once.

The number of repetitions of the procedure for forming the first linear pattern is larger than the number of repetitions of the procedure for forming the second linear pattern. If the number of repetitions of the procedure is the same, the relatively thin first linear pattern becomes lower than the second linear pattern. The height of the first linear pattern and the height of the second linear pattern can be aligned by making the number of repetitions of the procedure for forming the first linear pattern to be larger than the number of repetition of the procedure for forming the second linear pattern have.

1 is a plan view of a support substrate used in a method of manufacturing a substrate according to an embodiment.
2 (a) to 2 (d) are cross-sectional views of a substrate manufactured by the substrate manufacturing method according to the embodiment, in the course of manufacturing.
Fig. 2 (e) is a cross-sectional view of the substrate manufactured by the substrate manufacturing method according to the embodiment during the manufacturing process, and Fig. 2 (f) Fig.
Fig. 3 is a schematic view of a linear pattern for explaining a preferable number of repetitions of the procedure for forming each linear pattern. Fig.
4 is a graph showing an example of the relationship between the width and height of the linear pattern and the number (n) of repetition of the procedure.
5 is a schematic view of an application station of a substrate manufacturing apparatus according to an embodiment.
6 (a) is a perspective view of the nozzle unit, and Fig. 6 (b) is a bottom view of the nozzle unit.
7 is a plan view of a stage and a nozzle unit of the substrate manufacturing apparatus according to the embodiment.
8 is a schematic view of the whole of the substrate manufacturing apparatus according to the embodiment.

The substrate manufacturing method according to the embodiment will be described with reference to Figs. 1 and 2 (a) to 2 (f). First, a support substrate to be a base on which a pattern is to be formed is prepared.

Fig. 1 is a plan view of a support substrate 10 used in a method of manufacturing a substrate according to an embodiment. On the surface of the support substrate 10, a region 15 in which a mask pattern is to be formed is defined. The mask pattern to be formed has a plurality of linear patterns having different widths. For example, the region 15 in which the mask pattern is to be formed is divided into a region 11 in which a first linear pattern is to be formed (hereinafter referred to as a first region), a region in which a second linear pattern 12) (hereinafter referred to as a second region), and a region 13 in which a third linear pattern should be formed (hereinafter referred to as a third region). The width of the first area 11 is the smallest, and the width of the third area 13 is the largest. The target values of heights of the first linear pattern, the second linear pattern, and the third linear pattern are all the same.

2 (a) to 2 (f) are cross-sectional views of a substrate manufactured by the method for manufacturing a substrate according to the embodiment, at the stage of manufacturing. 2 (a) to 2 (f) correspond to the cross-section in the one-dot chain line 2-2 in Fig.

The first region 11, the second region 12, and the third region 13 are defined on the surface of the support substrate 10 as shown in Fig. 2A. The thin film material 20 is applied by droplet deposition to the first region 11, the second region 12, and the third region 13. Thereafter, the thin film material 20 applied to the support substrate 10 is cured.

The distribution density of the landing point of the liquid droplet is the same in the first region 11, the second region 12, and the third region 13. As the liquid thin film material 20, for example, a photo-curing resin is used. The thin film material 20 is cured by irradiating a curing light, for example, ultraviolet light, to the thin film material 20 applied to the support substrate 10. As a result, the first layer 31 constituting a part of the first linear pattern is formed in the first region 11. Likewise, a second layer 32 constituting a part of a second linear pattern and a third layer (a second layer 32) constituting a part of the third linear pattern are formed in the second region 12 and the third region 13 33 are formed. In this step, the degree of curing need not be approximately 100%. It is only necessary that the thin film material 20 does not flow in the in-plane direction and the degree of curing is sufficient to apply the liquid thin film material 20 on the cured thin film material 20.

The thin film material 20 is applied to the first region 11, the second region 12 and the third region 13 of the support substrate 10 by droplet coating as shown in Fig. 2 (b) The first layer 31, the second layer 32, and the third layer 33 are formed on the first layer 31, the second layer 32, and the third layer 33, respectively, Layer 33 is formed.

2 (c), the thin film material 20 is applied to the first region 11, the second region 12, and the third region 13 of the support substrate 10 by dropletization And the curing process is repeated. Thus, the first linear pattern 41 composed of the plurality of first layers 31 is formed in the first region 11. Similarly, the second linear pattern 42 composed of a plurality of second layers 32 and the third linear pattern 42 composed of the plurality of third layers 33 are formed in the second region 12 and the third region 13, respectively, A linear pattern 43 is formed. In this step, the number of layers in the first layer 31, the number of layers in the second layer 32, and the number of layers in the third layer 33 are all the same.

The thin film material 20 applied on the first layer 31 is expanded in the transverse direction until it is hardened. As a result, the side surface of the first linear pattern 41 is inclined so that its cross-section becomes a shape that is close to an erect trapezoid. The side surfaces of the second linear pattern 42 and the third linear pattern 43 are inclined in the same manner and have a shape in which the cross section thereof approximates a regular trapezoid.

The width of the side inclined portion hardly depends on the width of the linear pattern. Therefore, the widths of the portions of the first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 that are inclined to the side are substantially the same. Among the thin film materials constituting the linear pattern, the ratio of the thin film material used for the side inclined portion becomes larger as the line width becomes narrower. In the step shown in FIG. 2 (c), the height of the thinnest first linear pattern 41 is the lowest, and the height of the third linear pattern 43 which is the thickest is the highest. 2 (c) shows a cross-sectional view at the time when the height of the third linear pattern 43 reaches the target height.

2 (d), the thin film material 20 is applied on the upper surface of the first linear pattern 41 and the upper surface of the second linear pattern 42 by droplet application and curing. On the upper surface of the third linear pattern 43, the thin film material 20 is not applied. As a result, the heights of the first linear pattern 41 and the second linear pattern 42 increase. The application of the thin film material 20 to the upper surface of the second linear pattern 42 is terminated when the height of the second linear pattern 42 becomes substantially equal to the height of the third linear pattern 43 . At this point, the first linear pattern 41 is lower than the second linear pattern 42 and the third linear pattern 43.

As shown in Fig. 2 (e), the thin film material 20 is applied on the top surface of the first linear pattern 41 by droplet coating and cured. The thin film material 20 is not applied to the upper surfaces of the second linear pattern 42 and the third linear pattern 43. [ As a result, the height of the first linear pattern 41 increases. At the time when the height of the first linear pattern 41 becomes substantially equal to the height of the second linear pattern 42 and the third linear pattern 43, And the attachment of the material 20 is terminated.

The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 are formed on the surface of the support substrate 10 as shown in FIG. 2 (f) So that the metal is deposited in a region where the surface of the support substrate 10 is exposed. Thereby, the metal pattern 45 is formed. As the metal pattern 45, for example, copper is used.

In the method according to the embodiment, the thin film material 20 is applied by droplet application to the area of the support substrate 10 where the linear pattern should be formed, and the applied thin film material 20 is cured. The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 are formed by repeating the application and curing procedures (hereinafter, simply referred to as " . Paying attention to the first linear pattern 41 and the second linear pattern 42, it is preferable that the number of repetitions of the procedure for forming the relatively thin first linear pattern 41 is larger than the number of repetitions of the procedure for forming the relatively thin first linear pattern 41, Is larger than the number of repetitions of the procedure for forming the first electrode 42. Paying attention to the second linear pattern 42 and the third linear pattern 43, the number of repetitions of the procedure for forming the relatively thin second linear pattern 42 is relatively large, Is larger than the number of repetitions of the procedure for forming the first electrode 43.

Thus, by setting the number of repetitions of the procedure, it is possible to arrange the heights of the plurality of linear patterns having different thicknesses. Since the height of a plurality of linear patterns having different widths can be aligned even if the linear pattern is increased, the above-described substrate manufacturing method can be applied particularly to the production of a substrate having a thick copper pattern with a thickness of 100 占 퐉 or more .

With reference to FIG. 3, a preferable number of repetitions of the procedure for forming each linear pattern will be described.

When the number of repetitions of the procedure for forming the first linear pattern 41 is represented by n, it is preferable to set the number of repetitions n so as to satisfy the following condition. The height H10 of the first linear pattern 41 when the number of repetitions of the procedure is n-1 is lower than the height H3 of the third linear pattern 43 (i.e., the target height). If the number of repetitions of the procedure is n + 1, the height H11 of the first linear pattern 41 becomes higher than the height H3 of the third linear pattern 43. The difference between the height H1 of the first linear pattern 41 and the height H3 of the third linear pattern 43 can be reduced by setting the number of repetitions n to satisfy this condition.

The preferable number of repetition times of the procedure for forming the second linear pattern 42 can be set in the same manner as the preferable number of repetition times n of the procedure for forming the first linear pattern 41. [ Thus, the difference between the height H2 of the second linear pattern 42 and the height H3 of the third linear pattern 43 can be reduced.

There are generally two solutions of the number of iterations (n) satisfying the above-mentioned condition. In this case, it is preferable that the number n of repetitions of the procedure is set to the number of repetitions of the line pattern at a height closer to the target height.

Fig. 4 shows an example of the relationship between the width and height of the linear pattern and the number of repeats n of the procedure. The horizontal axis represents the width of the linear pattern, and the vertical axis represents the height of the linear pattern. The numerical value n attached to each solid line in Fig. 4 indicates the number of repetitions of the procedure. When the number n of repetitions of the procedure is fixed, as the width of the linear pattern becomes narrow, the height of the linear pattern becomes low. This is because, as shown in Fig. 2 (c), the ratio of the thin film material used for the side inclined portion becomes high.

The target value of the heights of the first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 (Fig. 2 (e)) is denoted by Ht. In the example shown in Fig. 4, when the number of repetitions of the procedure for forming the first linear pattern 41 of the width W1 is 14, the height closest to the target height Ht. When the number of repetitions of the procedure of forming the second linear pattern 42 of the width W2 is 13, the height thereof is closest to the target height Ht. When the number of repetitions of the procedure for forming the third linear pattern 43 of the width W3 is 12, the height closest to the target height Ht. As described above, the height of the linear pattern can be aligned by setting the number of repeats n of the procedure so that the height of the linear pattern is the closest to the target height Ht.

Fig. 5 shows a schematic view of an application station of the substrate manufacturing apparatus according to the embodiment. A stage 52 is supported on the base 50 through a moving mechanism 51. [ The stage 52 supports the support substrate 10 on which the thin film is to be formed. An xyz orthogonal coordinate system is defined in which the plane parallel to the surface of the support substrate 10 is the xy plane and the normal direction of the surface of the support substrate 10 is the z direction. A nozzle unit 53 and a camera 54 are supported above the stage 52. [ The moving mechanism 51 moves one of the support substrate 10 and the nozzle unit 53 in the x direction and the y direction with respect to the other. 5 shows a configuration in which the nozzle unit 53 is stopped with respect to the platen 50 and the supporting substrate 10 is moved. Conversely, when the supporting substrate 10 is stopped and the nozzle unit 53 is moved .

The nozzle unit 53 has a nozzle head opposed to the support substrate 10. A liquid thin film material of a photo-curable property is ejected from a plurality of nozzle holes formed in the nozzle head toward the support substrate 10 by dropletization. The timing at which the thin film material is discharged from the nozzle hole is controlled by the control device 60. [ The camera 54 picks up an alignment mark formed on the support substrate 10 and transmits the image data to the control device 60. [

6 (a) is a perspective view of the nozzle unit 53, and Fig. 6 (b) is a bottom view of the nozzle unit 53. Fig. Two nozzle heads 71, and three curing light sources 72 are mounted on the support plate 70. The two nozzle heads 71 are arranged in the y direction. A curing light source 72 is disposed between the two nozzle heads 71 and outside the nozzle head 71, respectively. When attention is paid to one nozzle head 71, a curing light source 72 is disposed on the positive side and the negative side in the y direction of the nozzle head 71, respectively.

A plurality of nozzle holes 73 are formed in each of the nozzle heads 71 at equal intervals in the x direction. 6A and 6B show an example in which a plurality of nozzle holes 73 of each nozzle head 71 are arranged in two rows. The two nozzle heads 71 are offset from each other and fixed in the x direction. A total of four nozzle holes 73 formed in the two nozzle heads 71 are distributed at regular intervals in the x direction.

The curing light source 72 irradiates curing light onto the liquid thin film material applied to the supporting substrate 10 (Fig. 5). For example, when the thin film material is ejected from the nozzle head 71 while moving the support substrate 10 (Fig. 5) in the y direction, the thin film material applied to the support substrate 10 is ejected from the nozzle And is cured by the light from the curing light source 72 disposed on the downstream side of the head 71.

6A and 6B, the number of mounts of the nozzle heads 71 is two, but the number of mounts of the nozzle heads 71 may be one or three or more. The curing light source 72 may be disposed on the downstream side of each of the nozzle heads 71. [ The curing light source 72 is disposed on each of both sides of the nozzle head 71 when the thin film material is coated while reciprocating the support substrate 10 in the y direction. When the number of mounts of the nozzle heads 71 is increased, the pitch of the nozzle holes 73 distributed equidistantly in the x direction becomes small. This makes it possible to increase the resolution of the linear pattern to be formed.

7 is a plan view of the stage 52 and the nozzle unit 53 of the substrate manufacturing apparatus according to the embodiment. The support substrate 10 is supported on the stage 52. On the surface of the support substrate 10, a region 15 in which a mask pattern is to be formed is defined.

A nozzle unit 53 is disposed above the support substrate 10. The nozzle unit 53 includes a nozzle head 71 and a curing light source 72. The thin film material can be applied to the supporting substrate 10 by ejecting the thin film material from the nozzle head 71 while moving the supporting substrate 10 in the y direction by the moving mechanism 51. [ The control device 60 controls the movement of the support substrate 10 by the moving mechanism 51 and the ejection timing of the thin film material from the nozzle head 71. [ Thus, the thin film material can be applied to the region 15 where the mask pattern is to be formed. The pattern information of the area 15 in which the mask pattern is to be formed is stored in the control device 60 in advance.

The thin film material can be applied to an arbitrary region of the surface of the support substrate 10 by repeating the same processing while shifting the support substrate 10 in the x direction.

Fig. 8 shows a schematic view of the whole of the substrate manufacturing apparatus according to the embodiment. The substrate manufacturing apparatus according to the embodiment includes an loading station 80, a temporary positioning station 81, a coating station 82, a curing station 83, and a transfer device 84. Define xyz Cartesian coordinates where the horizontal plane is the xy plane and the vertical direction is the positive direction of the z axis. The loading station 80, the temporary positioning station 81, the application station 82 and the curing station 83 are arranged in this order toward the positive direction of the x-axis. The control device 60 controls each of the devices in the loading station 80, the temporary positioning station 81, the application station 82, the curing station 83, and the transport device 84.

The first conveying roller 85 conveys the support substrate 10 to be processed in the positive direction of the x-axis from the loading station 80 to the temporary positioning station 81. The leading end of the supporting substrate 10 conveyed by the first conveying roller 85 comes into contact with the stopper 87 so that the supporting substrate 10 is roughly positioned with respect to the conveying direction.

The transport apparatus 84 transports the support substrate 10 from the temporary positioning station 81 to the application station 82 and from the application station 82 to the curing station 83. The transport device 84 includes a guide 90 and two lifters 91 and 92. [ The lifters 91 and 92 are guided by the guide 90 and move in the x direction. The lifters 91 and 92 have L-shaped support arms for supporting the support substrate 10, for example, in contact with the bottom surface of the support substrate 10. [ One of the lifters 91 transports the support substrate 10 from the temporary positioning station 81 to the application station 82 and the other lifter 92 transfers the support substrate 10 from the application station 82 to the curing station 83, The support substrate 10 is transported.

5, the application station 82 includes a platen 50, a moving mechanism 51, and a stage 52. [ In Fig. 8, the nozzle unit 53 (Fig. 5) and the like are not shown.

A second conveying roller 86 is disposed in the curing station 83. The support substrate 10 processed in the application station 82 is conveyed to the curing station 83 by the conveying device 84 and placed on the second conveying roller 86. [ The second conveying roller 86 conveys the supporting substrate 10 in the positive direction of the x-axis. A curing light source 88 is disposed above the conveying path of the support substrate 10. The curing light source 88 irradiates the support substrate 10 conveyed by the second conveying roller 86 with light including a wavelength component for curing the thin film material.

The first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 shown in FIG. 2 (e) are formed in the application station 82. In the curing treatment with light from the curing light source 72 of the application station 82, the degree of curing may not be sufficient. The first linear pattern 41, the second linear pattern 42 and the third linear pattern 43 formed at the application station 82 are further cured at the curing station 83. [ As a result, a sufficient degree of curing is obtained.

The control apparatus 60 stores correspondence relationship information (Fig. 4) for obtaining the repetition number of the procedure from the width and height of the linear pattern. The control device 60 calculates the target value of the height of the linear pattern (the height Ht in Fig. 4), the target value of the width of the first linear pattern 41 (the width W1 in Fig. 4) Based on the target value of the width of the pattern (the width W2 in Fig. 4), the target value of the width of the third linear pattern 43 (the width W3 in Fig. 4) The number n of repetitions of the procedure of forming the first linear pattern 41, the second linear pattern 42, and the third linear pattern 43 is obtained.

The number of repetitions of the procedure from FIG. 2 (a) to FIG. 2 (c) is the same as the repetition number of the procedure of forming the third linear pattern 43. The number of repetitions of the procedure from FIG. 2 (a) to FIG. 2 (d) is the same as the repetition number of the procedure of forming the second linear pattern 42. The number of repetitions of the procedure from (a) to (e) in FIG. 2 is the same as the repetition number of the procedure for forming the first linear pattern 41.

The control device 60 controls the nozzle head 71 and the moving mechanism 51 based on the number of repetitions n of the procedure for forming each linear pattern and the pattern information. As described above, by appropriately determining the number of repetitions of the procedure in accordance with the width of the linear pattern, it is possible to form a linear pattern in which the heights are aligned.

Although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto. For example, it is apparent to those skilled in the art that various modifications, improvements, combinations, and the like are possible.

10: Support substrate
11: area where the first linear pattern should be formed
12: area where the second linear pattern should be formed
13: area where the third linear pattern should be formed
15: area where a mask pattern should be formed
20: Thin film material
31: First layer
32: Second layer
33: Third floor
41: first linear pattern
42: 2nd linear pattern
43: Third linear pattern
45: metal pattern
50: Plate
51:
52: stage
53: nozzle unit
54: camera
60: Control device
70: Support plate
71: nozzle head
72: Curing light source
73: nozzle hole
80: Loading station
81: Temporary positioning station
82: dispensing station
83: Curing station
84:
85: first conveying roller
86: Second conveying roller
87: Stopper
88: Light source for hardening
90: Guide
91, 92: Lifter

Claims (5)

Preparing a supporting substrate on which a first linear pattern and a second linear pattern wider than the first linear pattern are to be formed;
A step of repeatedly performing a procedure of dropletizing and landing a thin film material on a region of the support substrate where the first linear pattern and the second linear pattern should be formed and hardening the deposited thin film material a plurality of times And,
Wherein the number of repetitions of the procedure for forming the first linear pattern is larger than the number of repetitions of the procedure for forming the second linear pattern. The method according to claim 1,
When the number of repetitions of the procedure for forming the first linear pattern is represented by n, the first linear pattern formed by repeating the number of repetitions of the procedure n-1 is lower than the second linear pattern (N) is set such that the first linear pattern formed by repeating the above-described steps n + 1 is higher than the second linear pattern. 3. The method according to claim 1 or 2,
After the first linear pattern and the second linear pattern are formed, a metal is deposited on an area of the surface of the support substrate where the first linear pattern and the second linear pattern are not formed ≪ / RTI > A stage for supporting a supporting substrate on which a first linear pattern and a second linear pattern wider than the first linear pattern are to be formed,
A nozzle head having a plurality of nozzle holes for ejecting a photo-curable liquid thin film material toward the support substrate supported on the stage;
A moving mechanism for moving one of the support substrate and the nozzle head relative to the other,
A light source for irradiating curing light onto the liquid thin film material attached to the support substrate supported on the stage,
And a control device for controlling the nozzle head, the light source, and the moving mechanism,
The target value of the height of the first linear pattern is equal to the target value of the height of the second linear pattern,
Wherein the control device controls the nozzle head, the light source, and the moving mechanism,
A liquid thin film material is discharged from the nozzle head while one side of the nozzle head and the substrate are moved relative to the other side of the substrate so that the first linear pattern and the second linear pattern are formed on the surface of the substrate A first step of applying a liquid thin film material and irradiating curing light from the light source to the thin film material in liquid form attached to the substrate to cure the thin film material a plurality of times,
Also,
A liquid thin film material is discharged from the nozzle head while one side of the nozzle head and the substrate are moved to the other side so that a liquid thin film material And a curing light is irradiated from the light source to the liquid thin film material attached to the substrate to cure the thin film material and a liquid thin film material And the second step is not performed. 5. The method of claim 4,
The control device includes:
Corresponding relationship information for obtaining the number of repetitions of the procedure from the width and height of the linear pattern is stored,
Based on the target value of the height of the first linear pattern, the target value of the width of the first linear pattern, the target value of the width of the second linear pattern, and the corresponding relationship information, And obtains a repetition number of the second procedure.

Images