TW201444109A - Solar automobile skylight and manufacturing method thereof - Google Patents
Solar automobile skylight and manufacturing method thereof Download PDFInfo
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- TW201444109A TW201444109A TW103116229A TW103116229A TW201444109A TW 201444109 A TW201444109 A TW 201444109A TW 103116229 A TW103116229 A TW 103116229A TW 103116229 A TW103116229 A TW 103116229A TW 201444109 A TW201444109 A TW 201444109A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000011521 glass Substances 0.000 claims abstract description 195
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- 239000010409 thin film Substances 0.000 claims abstract description 103
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- 229910052732 germanium Inorganic materials 0.000 claims description 63
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- 239000010408 film Substances 0.000 claims description 58
- 238000002834 transmittance Methods 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 10
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 6
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
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- 230000005693 optoelectronics Effects 0.000 claims 1
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- 241000282405 Pongo abelii Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本發明涉及太陽能光伏應用產品領域，尤其涉及一種太陽能汽車天窗及其製作方法。The invention relates to the field of solar photovoltaic application products, in particular to a solar vehicle sunroof and a manufacturing method thereof.
太陽能是一種取之不盡，用之不竭的新型清潔能源。與風能、核能等其他新型能源相比，由於陽光無處不在，太陽能除了適合大規模並網發電以外，也非常適合於做分散、小規模的應用。太陽能光伏發電最早的小規模應用可追溯到人造衛星上的太陽能電池板。如今，人們通常將太陽能電池板放置在建築物屋頂上，或安裝於各種交通工具上以補充日常耗能的不足。其中，用於汽車的太陽能電池板是最普遍的，每年有層出不窮的相關技術通過專利公開，典型的如下述兩例：公開號為US20060073044的美國專利提出，用固定於汽車車窗上的太陽能電池板驅動車內的風扇工作，能起到降低車內溫度的作用；公開號為US20120132245的美國專利提出，將具有柔性基底的多個太陽能電池粘合於車窗玻璃上，可以消除在車頂放置太陽能電池板時車所承受的重量。Solar energy is an inexhaustible new clean energy source. Compared with other new energy sources such as wind energy and nuclear energy, solar energy is not only suitable for large-scale grid-connected power generation, but also suitable for distributed and small-scale applications. The earliest small-scale applications of solar photovoltaic power can be traced back to solar panels on satellites. Today, solar panels are often placed on the roof of a building or installed on a variety of vehicles to supplement the daily energy consumption. Among them, solar panels for automobiles are the most common, and various related technologies are disclosed by patents every year. Typical examples are as follows: US Patent No. US20060073044, which is a solar cell fixed on a car window. The operation of the fan in the panel drive can reduce the temperature inside the vehicle; the US Patent No. US20120132245 proposes to bond a plurality of solar cells with a flexible substrate to the window glass to eliminate the placement on the roof. The weight of the car when the solar panel is worn.
然而上述專利公開的技術均是利用傳統的晶矽電池結構，將玻璃或柔性的聚合物基底上的電池進行絕緣分割，製程較為複雜，與汽車本體的結合程度也不高，影響汽車的整體美觀。較厚的玻璃基底、聚合物基底和晶矽的透光性都不好，與汽車車窗結合以後會降低車廂內的光照亮度。However, the techniques disclosed in the above patents all utilize the traditional crystalline germanium battery structure to insulate and divide the battery on the glass or the flexible polymer substrate, the process is relatively complicated, and the degree of integration with the automobile body is not high, which affects the overall aesthetics of the automobile. . Thicker glass substrates, polymer substrates, and wafers have poor light transmission, and when combined with automotive windows, the brightness of the interior of the cabin is reduced.
近年來出現了一些新的技術，將薄膜太陽能電池用於汽車天窗，如申請號為CN201220357230.X的中國實用新型專利所公開的技術。薄膜太陽能電池有外觀漂亮、生產自動化程度高、可彎曲、可透明等多種優勢。將薄膜太陽能電池與汽車天窗相結合，製程較為簡單，也使得太陽能元件與汽車一體化，提高了整體美觀性。作為能用於汽車天窗的薄膜太陽能電池板，一方面要求其具有良好的透光性以保證車廂的照明亮度，另一方面又要求其有良好的彎曲性能，以便和汽車天窗玻璃的彎曲結構面緊密貼合。為滿足這兩方面的需求，薄膜太陽能電池板的基底必須是既透明又可彎曲的。In recent years, some new technologies have emerged for the use of thin film solar cells for automotive sunroofs, such as the technology disclosed in Chinese Utility Model Patent No. CN201220357230.X. Thin-film solar cells have many advantages such as beautiful appearance, high degree of automation, flexibility, and transparency. The combination of a thin film solar cell and a sunroof of a car makes the process simpler, and also integrates the solar component with the automobile, thereby improving the overall aesthetics. As a thin film solar panel that can be used for a sunroof of a vehicle, on the one hand, it is required to have good light transmittance to ensure the illumination brightness of the compartment, and on the other hand, it is required to have good bending performance, so as to be curved with the curved structure of the automobile sunroof glass. Closely fit. To meet these two needs, the substrate of a thin film solar panel must be both transparent and bendable.
薄膜太陽能電池板的基底可以根據具體需求選擇玻璃、聚合物、陶瓷和石墨中的任何一種，其中玻璃為透明基底，透光性好，可用於製造透明的薄膜太陽能電池，但現有的薄膜太陽能電池技術選用的玻璃基底的厚度一般大於3mm，不具有可彎曲性；而聚合物為柔性基底，容易彎曲和折疊，一般用於製造可彎曲的薄膜太陽能電池板，但聚合物基底大都不同時具有透光性和耐高溫性，即無法經受200℃以上的製程溫度，因而難以在上面沉積電池薄膜。The substrate of the thin film solar panel can be selected according to specific requirements, such as glass, polymer, ceramic and graphite. The glass is a transparent substrate and has good light transmittance, and can be used for manufacturing transparent thin film solar cells, but the existing thin film solar cells The thickness of the glass substrate selected by the technology is generally greater than 3 mm, and has no bendability; and the polymer is a flexible substrate, which is easy to bend and fold, and is generally used for manufacturing a flexible thin film solar panel, but the polymer substrate is not transparent at the same time. Light and high temperature resistance, that is, it cannot withstand a process temperature of 200 ° C or higher, and thus it is difficult to deposit a battery film thereon.
另外，現有的薄膜太陽能電池板製造設備和製程絕大多數都是建立在平面基底上的，如平板浮法玻璃等，這使得直接製造具有一定彎曲弧度的薄膜太陽能電池存在很大的困難。如果要通過在彎曲基底上進行均勻鍍膜來加工製造薄膜太陽能電池板，則需要對鍍膜設備和製程做較大的改動，這不僅會使成本大幅度提高，而且由於不同彎曲結構面具有不同的形狀和彎曲弧度，導致設備和製程對不同彎曲幅度的天窗玻璃的適應程度也有很大的局限性。In addition, most of the existing thin film solar panel manufacturing equipment and processes are built on a flat substrate, such as flat float glass, which makes it difficult to directly fabricate a thin film solar cell having a certain curvature. If a thin film solar panel is to be processed by uniform coating on a curved substrate, it is necessary to make major changes to the coating equipment and the process, which not only greatly increases the cost, but also has different shapes due to different curved structural faces. And the curvature of the arc, which leads to a great limitation of the degree of adaptation of the equipment and the process to the skylight glass with different bending amplitudes.
綜上所述，現有的太陽能汽車天窗技術所使用的薄膜太陽能電池板的玻璃的基底一般較厚，可彎曲性較差，不能滿足製作太陽能汽車天窗的彎曲度需求，並且現有的薄膜太陽能電池板的製備製程很難將其直接加工為具有一定彎曲弧度的電池板，因而無法應用於製備太陽能汽車天窗。In summary, the glass of the thin-film solar panel used in the existing solar vehicle sunroof technology is generally thick and has poor bendability, cannot meet the bending requirements of the solar vehicle sunroof, and the existing thin film solar panel It is difficult to prepare the process directly into a panel with a certain curvature and thus cannot be applied to the preparation of a solar car sunroof.
針對現有技術存在的問題，本發明的目的在於提供一種太陽能汽車天窗，太陽能汽車天窗所包含的薄膜太陽能電池板的基底具有較高的可彎曲性和光透射率，使得太陽能汽車天窗具有良好的透光性且較容易製作加工，並具有均勻連續的一體結構。In view of the problems existing in the prior art, the object of the present invention is to provide a solar vehicle sunroof, and the substrate of the thin film solar panel included in the solar vehicle sunroof has high flexibility and light transmittance, so that the solar vehicle sunroof has good light transmission. It is easy to make and process, and has a uniform and continuous integrated structure.
本發明的另一目的在於提供一種太陽能汽車天窗的製作方法，製作方法具有普遍適用性，能較為方便的用於製作具有各種彎曲幅度的太陽能汽車天窗。Another object of the present invention is to provide a method for manufacturing a solar vehicle sunroof, which has universal applicability and can be conveniently used for manufacturing a solar vehicle sunroof having various bending ranges.
一種太陽能汽車天窗，太陽能汽車天窗包括天窗玻璃和薄膜太陽能電池板，薄膜太陽能電池板包括基底、位於基底上的第一電極、位於第一電極上的光電轉換層、位於光電轉換層上的第二電極和柵電極，基底為超薄玻璃基底，超薄玻璃基底的厚度為0.1-1mm，超薄玻璃基底具有可彎曲性，其最小彎曲半徑可達10cm以下，第一電極在形成過程中連續設置在基底上。A solar vehicle sunroof, the solar vehicle sunroof comprises a skylight glass and a thin film solar panel, the thin film solar panel comprising a substrate, a first electrode on the substrate, a photoelectric conversion layer on the first electrode, and a second on the photoelectric conversion layer Electrode and gate electrode, the substrate is an ultra-thin glass substrate, the ultra-thin glass substrate has a thickness of 0.1-1 mm, the ultra-thin glass substrate has flexibility, and the minimum bending radius is up to 10 cm, and the first electrode is continuously set during formation. On the substrate.
本發明所公開的太陽能汽車天窗的有益效果在於：厚度為0.1-1mm的超薄玻璃基底具有增加透光率的效果，提高了薄膜太陽能電池板的透光性，進而使得太陽能電池天窗具有良好的透光性；通過增加基底的透光率還提高了光電轉換層的吸收率，使得薄膜太陽能電池的效率比現有的薄膜太陽能電池高1-2%；超薄玻璃基底的可彎曲性較好，能夠方便的用於製作各種彎曲幅度的太陽能汽車天窗；第一電極連續設置在基底上，相對於傳統的在基底上用絕緣物質分割出多個電池塊而言，製程簡單，在應用於太陽能汽車天窗時，能與彎曲的天窗玻璃緊密結合形成均勻連續的一體結構，較為美觀。與聚合物基底相比，超薄玻璃基底還具有耐高溫，隔絕環境侵蝕性能好的優點。The solar photovoltaic sunroof disclosed by the invention has the beneficial effects that the ultra-thin glass substrate with a thickness of 0.1-1 mm has the effect of increasing the light transmittance, improves the light transmittance of the thin film solar panel, and further improves the solar cell skylight. Transmittance; by increasing the light transmittance of the substrate, the absorption rate of the photoelectric conversion layer is also improved, so that the efficiency of the thin film solar cell is 1-2% higher than that of the existing thin film solar cell; the flexibility of the ultra-thin glass substrate is better. It can be conveniently used to make solar sunroofs of various bending widths; the first electrode is continuously disposed on the substrate, and the process is simple, and is applied to a solar vehicle, compared with the conventional one in which a plurality of battery blocks are separated by an insulating substance on the substrate. When the sunroof is used, it can be closely combined with the curved sunroof glass to form a uniform and continuous integrated structure, which is more beautiful. Compared with polymer substrates, ultra-thin glass substrates also have the advantages of high temperature resistance and good environmental corrosion resistance.
較佳的，超薄玻璃基底的彎曲半徑大於30cm，超薄玻璃基底的厚度為0.35-1mm。其有益效果在於，在能夠達到所需的彎曲半徑的情況下，應盡可能選用較厚的超薄玻璃做基底以增加薄膜太陽能電池板的強度。Preferably, the ultra-thin glass substrate has a bending radius of more than 30 cm, and the ultra-thin glass substrate has a thickness of 0.35-1 mm. The beneficial effect is that thicker ultra-thin glass should be used as the substrate to increase the strength of the thin film solar panel when the desired bending radius can be achieved.
較佳的，第一電極為全透明薄膜，第二電極為非全透明薄膜。Preferably, the first electrode is a fully transparent film and the second electrode is a non-transparent film.
較佳的，第一電極、第二電極的透光性相等，且均為全透明薄膜。Preferably, the first electrode and the second electrode have the same light transmittance and are all transparent films.
較佳的，第一電極、第二電極的材料均為透明導電氧化物，透明導電氧化物包括選自氧化鋅、氧化錫、氧化銦錫和石墨烯中的一種。Preferably, the materials of the first electrode and the second electrode are all transparent conductive oxides, and the transparent conductive oxide comprises one selected from the group consisting of zinc oxide, tin oxide, indium tin oxide and graphene.
較佳的，光電轉換層包括選自非晶矽、微晶矽、多晶矽和單晶矽薄膜中的一種或多種；非晶矽、多晶矽或單晶矽薄膜形成包含一個P-N或P-I-N結的單結結構，或包含多個P-N或P-I-N結的多結結構。Preferably, the photoelectric conversion layer comprises one or more selected from the group consisting of amorphous germanium, microcrystalline germanium, polycrystalline germanium and single crystal germanium film; amorphous germanium, polycrystalline germanium or single crystal germanium film forms a single junction comprising a PN or PIN junction Structure, or a multi-junction structure containing multiple PN or PIN junctions.
較佳的，光電轉換層包括選自碲化鎘薄膜、銅銦鎵錫薄膜和有機半導體薄膜中的一種或多種。Preferably, the photoelectric conversion layer comprises one or more selected from the group consisting of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
較佳的，基底的彎曲半徑大於1m。Preferably, the bending radius of the substrate is greater than 1 m.
較佳的，天窗玻璃具有朝向車內的下表面以及朝向車外的上表面，薄膜太陽能電池板設置在天窗玻璃的上表面上，光電轉換層包括P型層、N型層，P型層緊鄰第一電極設置。較佳的，天窗玻璃具有朝向車內的下表面以及朝向車外的上表面，薄膜太陽能電池板設置在天窗玻璃的下表面上，光電轉換層包括P型層、N型層，N型層緊鄰第一電極設置。其有益效果在於，由於非晶矽薄膜中電子的遷移率大於空穴的遷移率，在包含P-I-N結的光電轉換層中，將P型層設置於接受太陽光照射的一面，P型層中產生的電子將跨越I層運動更遠的距離而被電極收集，而空穴可以直接被緊鄰P型層的電極所收集，提高了空穴的收集率，從而提高了電池的光電轉換效率。Preferably, the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle. The thin film solar panel is disposed on the upper surface of the sunroof glass, and the photoelectric conversion layer comprises a P-type layer and an N-type layer, and the P-type layer is adjacent to the first One electrode setting. Preferably, the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle. The thin film solar panel is disposed on the lower surface of the sunroof glass, and the photoelectric conversion layer comprises a P-type layer and an N-type layer, and the N-type layer is adjacent to the first One electrode setting. The beneficial effect is that, since the mobility of electrons in the amorphous germanium film is larger than the mobility of holes, in the photoelectric conversion layer including the PIN junction, the P-type layer is disposed on the side irradiated with sunlight, and the P-type layer is generated. The electrons will be collected by the electrodes at a greater distance across the I layer, and the holes can be directly collected by the electrodes adjacent to the P-type layer, which increases the collection rate of holes, thereby improving the photoelectric conversion efficiency of the battery.
較佳的，超薄玻璃基底的厚度大於0.5mm，用以增加薄膜太陽能電池板的機械強度。較佳的，超薄玻璃基底為經過化學鋼化處理的玻璃，用以增加薄膜太陽能電池板的機械強度。Preferably, the ultra-thin glass substrate has a thickness greater than 0.5 mm for increasing the mechanical strength of the thin film solar panel. Preferably, the ultra-thin glass substrate is a chemically tempered glass for increasing the mechanical strength of the thin film solar panel.
較佳的，柵電極通過導線與汽車電源系統及其一負載連接，負載包括車廂內的風扇、照明燈和電子娛樂系統中的至少一種。Preferably, the gate electrode is connected to the automotive power system and a load thereof via a wire, and the load includes at least one of a fan, an illumination lamp, and an electronic entertainment system in the vehicle compartment.
較佳的，天窗玻璃為具有一定彎曲幅度的剛性玻璃。Preferably, the sunroof glass is a rigid glass having a certain bending amplitude.
較佳的，天窗玻璃為剛性玻璃，薄膜太陽能電池板與天窗玻璃的彎曲幅度不同，薄膜太陽能電池板安裝在與天窗玻璃相對應的位置。Preferably, the sunroof glass is rigid glass, the thin film solar panel and the skylight glass have different bending amplitudes, and the thin film solar panel is installed at a position corresponding to the sunroof glass.
較佳的，天窗玻璃為沒有彎曲幅度的剛性玻璃，薄膜太陽能電池板安裝在與天窗玻璃相對應的位置。Preferably, the sunroof glass is a rigid glass having no bending amplitude, and the thin film solar panel is mounted at a position corresponding to the sunroof glass.
較佳的，薄膜太陽能電池板與天窗玻璃彎曲幅度相同。Preferably, the thin film solar panel has the same bending amplitude as the sunroof glass.
本發明還提供了一種太陽能汽車天窗的製作方法，其包含如下步驟：S1. 提供一成型的汽車天窗玻璃，和一超薄玻璃基底，超薄玻璃基底的厚度為0.1-1mm，超薄玻璃基底具有可彎曲性；S2. 在超薄玻璃基底上沉積依次沉積第一電極、光電轉換層和第二電極，以形成薄膜電池組；S3. 用鐳射分別對第一電極、光電轉換層和第二電極進行刻線，用以將薄膜電池組分割成諸多較小的電池單元並做串聯和並聯連接；S4. 對薄膜電池組做鐳射或化學刻蝕處理，用以提高薄膜電池組的透光性；S5. 設置柵電極，形成薄膜太陽能電池板；S6. 將薄膜太陽能電池板與天窗玻璃結合，使得薄膜電池組被封裝於超薄玻璃基底與天窗玻璃之間，形成可工作的太陽能汽車天窗。The invention also provides a method for manufacturing a solar vehicle sunroof, comprising the following steps: S1. providing a molded automobile sunroof glass, and an ultra-thin glass substrate, the ultra-thin glass substrate having a thickness of 0.1-1 mm, an ultra-thin glass substrate Flexibility; S2. Depositing a first electrode, a photoelectric conversion layer, and a second electrode in sequence on an ultra-thin glass substrate to form a thin film battery; S3. separately irradiating the first electrode, the photoelectric conversion layer, and the second The electrode is scribed to divide the thin film battery into a plurality of smaller battery cells and connected in series and in parallel; S4. Laser or chemical etching treatment on the thin film battery to improve light transmittance of the thin film battery S5. Set the gate electrode to form a thin film solar panel; S6. Combine the thin film solar panel with the skylight glass, so that the thin film battery pack is packaged between the ultra-thin glass substrate and the skylight glass to form a working solar car sunroof.
本發明所提供的太陽能汽車天窗的製作方法的有益效果為：本發明所提供的太陽能汽車天窗中的薄膜太陽能電池板在各層薄膜在形成過程中都是連續的，只是在鍍膜完成之後的步驟S3中才用鐳射刻線切割成較小的電池單元，因而製作製程更為簡單，提高了製備效率，也使得薄膜太陽能電池板與彎曲的天窗玻璃緊密貼合，呈一體化結構，外表更為美觀。The beneficial effects of the solar cell sunroof manufacturing method provided by the present invention are as follows: the thin film solar cell panel in the solar vehicle sunroof provided by the present invention is continuous in the formation process of each layer of the film, but only in step S3 after the coating is completed. The laser cutting wire is used to cut into smaller battery cells, which makes the manufacturing process simpler, improves the preparation efficiency, and makes the thin film solar panel closely fit with the curved sunroof glass, and has an integrated structure and a more beautiful appearance. .
本發明所提供的太陽能汽車天窗的製作方法將具有可彎曲超薄玻璃基底的太陽能電池板與天窗玻璃通過彎曲處理直接結合，形成牢固的具有一定弧度的太陽能電池板，由於在鍍膜過程中超薄玻璃基底仍處於平面形式，製程條件都不需要做任何改變，避免了通常在製造彎曲電池板時所遇到的問題和額外成本的增加，極大的增加了設備和製備製程方法對各種彎曲幅度的天窗玻璃的普遍適用性。因此，本發明所提供的太陽能汽車天窗的製作方法適用於製造各種彎曲幅度的太陽能汽車天窗。The solar cell sunroof provided by the invention provides a solar panel with a flexible ultra-thin glass substrate and a skylight glass directly combined by bending treatment to form a solid solar panel with a certain curvature, which is ultra-thin during the coating process. The glass substrate is still in a flat form, and the process conditions do not need to be changed, avoiding the problems and additional cost that are usually encountered in the manufacture of curved panels, greatly increasing the equipment and the manufacturing process for various bending ranges. The universal applicability of skylight glass. Therefore, the manufacturing method of the solar vehicle sunroof provided by the present invention is suitable for manufacturing solar vehicle sunroof of various bending widths.
較佳的，使用層壓製程將薄膜太陽能電池板與天窗玻璃結合。較佳的，使用黏結製程將薄膜太陽能電池板與天窗玻璃黏合在一起。Preferably, the thin film solar panel is bonded to the skylight glass using a lamination process. Preferably, the thin film solar panel is bonded to the sunroof glass using a bonding process.
較佳的，第一電極為全透明薄膜，第二電極為非全半透明薄膜。較佳的，第一電極、第二電極的透光性相等，且均為全透明薄膜。Preferably, the first electrode is a fully transparent film and the second electrode is a non-translucent film. Preferably, the first electrode and the second electrode have the same light transmittance and are all transparent films.
較佳的，第一電極、第二電極的材料均為透明導電氧化物，透明導電氧化物包括選自氧化鋅、氧化錫、氧化銦錫和石墨烯中的一種。Preferably, the materials of the first electrode and the second electrode are all transparent conductive oxides, and the transparent conductive oxide comprises one selected from the group consisting of zinc oxide, tin oxide, indium tin oxide and graphene.
較佳的，用於製備第一電極、第二電極的製程溫度低於600oC，用以避免超薄玻璃基底發生形變。進一步較佳的，第一電極、第二電極用低壓化學氣相沉積（LPCVD）或常壓化學氣相沉積（APCVD）方法製備。Preferably, the process temperature for preparing the first electrode and the second electrode is lower than 600 ° C to avoid deformation of the ultra-thin glass substrate. Further preferably, the first electrode and the second electrode are prepared by a low pressure chemical vapor deposition (LPCVD) or an atmospheric pressure chemical vapor deposition (APCVD) method.
較佳的，光電轉換層包括選自非晶矽、微晶矽、多晶矽和單晶矽薄膜中的一種或多種，非晶矽、微晶矽、多晶矽或單晶矽薄膜形成包含一個P-N結或P-I-N結的單結結構，或形成包含多個P-N結及P-I-N結的多結結構。Preferably, the photoelectric conversion layer comprises one or more selected from the group consisting of amorphous germanium, microcrystalline germanium, polycrystalline germanium, and single crystal germanium film, and the amorphous germanium, microcrystalline germanium, polycrystalline germanium or single crystal germanium film is formed to include a PN junction or A single junction structure of a PIN junction or a multi-junction structure comprising a plurality of PN junctions and a PIN junction.
較佳的，用於製備光電轉換層的製程溫度低於600oC，用以避免超薄玻璃基底發生形變。可選的，光電轉換層用等離子增強化學氣相沉積（PECVD）方法製備。Preferably, the process temperature for preparing the photoelectric conversion layer is lower than 600 ° C to avoid deformation of the ultra-thin glass substrate. Alternatively, the photoelectric conversion layer is prepared by a plasma enhanced chemical vapor deposition (PECVD) method.
較佳的，光電轉換層包括選自碲化鎘薄膜、銅銦鎵錫薄膜和有機半導體薄膜中的一種或多種。Preferably, the photoelectric conversion layer comprises one or more selected from the group consisting of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
較佳的，天窗玻璃具有朝向車內的下表面以及朝向車外的上表面，薄膜太陽能電池板設置在天窗玻璃的上表面上，光電轉換層包括P型層、N型層，P型層緊鄰第一電極設置。Preferably, the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle. The thin film solar panel is disposed on the upper surface of the sunroof glass, and the photoelectric conversion layer comprises a P-type layer and an N-type layer, and the P-type layer is adjacent to the first One electrode setting.
較佳的，超薄玻璃基底的厚度大於0.5mm，用以增加薄膜太陽能電池板的機械強度。Preferably, the ultra-thin glass substrate has a thickness greater than 0.5 mm for increasing the mechanical strength of the thin film solar panel.
較佳的，超薄玻璃基底為經過化學鋼化處理的玻璃，用以增加薄膜太陽能電池板的機械強度。Preferably, the ultra-thin glass substrate is a chemically tempered glass for increasing the mechanical strength of the thin film solar panel.
較佳的，天窗玻璃具有朝向車內的下表面以及朝向車外的上表面，薄膜太陽能電池板設置在天窗玻璃的下表面上，光電轉換層包括P型層、N型層，N型層緊鄰第一電極設置。Preferably, the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle. The thin film solar panel is disposed on the lower surface of the sunroof glass, and the photoelectric conversion layer comprises a P-type layer and an N-type layer, and the N-type layer is adjacent to the first One electrode setting.
較佳的，層壓製程在高壓釜中進行，層壓製程為曲面真空層壓法。Preferably, the lamination process is carried out in an autoclave, and the lamination process is a curved vacuum lamination process.
較佳的，層壓製程的材料選用合成乙烯樹脂（EVA）、聚乙烯縮丁醛（PVB）或離子鍵樹脂。Preferably, the layering process is made of synthetic vinyl resin (EVA), polyvinyl butyral (PVB) or ionomer resin.
較佳的，黏結製程選用杜邦公司生產的“文泰科”（Vertak）黏結劑。Preferably, the bonding process uses a Vertak adhesive produced by DuPont.
較佳的，柵電極通過導線與汽車電源系統及其一負載連接，負載包括車廂內的風扇、照明燈和電子娛樂系統中的至少一種。Preferably, the gate electrode is connected to the automotive power system and a load thereof via a wire, and the load includes at least one of a fan, an illumination lamp, and an electronic entertainment system in the vehicle compartment.
10．．．基底10. . . Base
20．．．第一電極20. . . First electrode
30．．．光電轉換層30. . . Photoelectric conversion layer
31．．．P型層、P型摻雜層31. . . P-type layer, P-type doped layer
32．．．固有層、I型層32. . . Latent layer, type I layer
33．．．N型層、N型摻雜層33. . . N-type layer, N-type doped layer
40．．．第二電極40. . . Second electrode
50．．．柵電極50. . . Gate electrode
100．．．超薄玻璃基底100. . . Ultra-thin glass substrate
200．．．薄膜電池組200. . . Thin film battery pack
300．．．天窗玻璃300. . . Skylight glass
310．．．上表面310. . . Upper surface
320．．．下表面320. . . lower surface
第1圖為本發明所公開的太陽能汽車天窗所包含的薄膜太陽能電池板的一種較佳的實施例的結構示意圖。1 is a schematic structural view of a preferred embodiment of a thin film solar panel included in a solar vehicle sunroof disclosed in the present invention.
第2圖為不同厚度的超薄玻璃基底的光吸收率與光波長的變化關係圖。Figure 2 is a graph showing the relationship between the light absorptivity and the wavelength of light for ultrathin glass substrates of different thicknesses.
第3圖為兩種較薄的超薄玻璃基底的彎曲應力與彎曲半徑的變化關係圖。Figure 3 is a graph showing the relationship between the bending stress and the bending radius of two thin ultra-thin glass substrates.
第4圖為多種厚度的超薄玻璃基底的彎曲應力與彎曲半徑的變化關係圖。Figure 4 is a graph showing the relationship between the bending stress and the bending radius of an ultra-thin glass substrate of various thicknesses.
第5圖為本發明所公開的太陽能汽車天窗的一種較佳的實施例的結構示意圖。FIG. 5 is a schematic structural view of a preferred embodiment of a solar vehicle sunroof disclosed in the present invention.
第6圖為本發明所公開的太陽能汽車天窗的製作方法的流程圖。Figure 6 is a flow chart of a method for fabricating a solar vehicle sunroof disclosed in the present invention.
以下將結合附圖所示的具體實施方式對本發明進行詳細描述，但這些實施方式並不限制本發明，本技術領域的通常知識者根據這些實施方式所做出的結構、方法、或功能上的變換均包含在本發明的保護範圍內。The present invention will be described in detail below with reference to the specific embodiments shown in the accompanying drawings, but these embodiments are not intended to limit the invention, the structure, method, or function of Transformations are included within the scope of the invention.
一種太陽能汽車天窗，太陽能汽車天窗包括天窗玻璃和薄膜太陽能電池板，薄膜太陽能電池板包括基底、位於基底上的第一電極、位於第一電極上的光電轉換層、位於光電轉換層上的第二電極和柵電極，基底為超薄玻璃基底，超薄玻璃基底的厚度為0.1-1mm，超薄玻璃基底具有可彎曲性，其最小彎曲半徑可達10cm以下，第一電極在形成過程中連續設置在基底上。A solar vehicle sunroof, the solar vehicle sunroof comprises a skylight glass and a thin film solar panel, the thin film solar panel comprising a substrate, a first electrode on the substrate, a photoelectric conversion layer on the first electrode, and a second on the photoelectric conversion layer Electrode and gate electrode, the substrate is an ultra-thin glass substrate, the ultra-thin glass substrate has a thickness of 0.1-1 mm, the ultra-thin glass substrate has flexibility, and the minimum bending radius is up to 10 cm, and the first electrode is continuously set during formation. On the substrate.
第1圖為本發明的一種較佳的實施例中，太陽能汽車天窗所包含的薄膜太陽能電池板的結構示意圖。參照第1圖，薄膜太陽能電池板包括基底10、位於基底上的第一電極20、位於第一電極上的光電轉換層30、位於光電轉換層30上的第二電極40，還包括第二電極上的柵電極50。基底10為超薄玻璃基底，超薄玻璃基底的厚度為0.1-1mm，超薄玻璃基底具有可彎曲性，其最小彎曲半徑可達10cm以下。第一電極20在其中形成過程中連續設置在基底10上。如第1圖所示的本發明較佳的實施例，光電轉換層30包括非晶矽P型層31、非晶矽固有層32和非晶矽N型層33，第一電極20和第二電極40均由氧化鋅材料製成。1 is a schematic structural view of a thin film solar panel included in a solar vehicle sunroof in a preferred embodiment of the present invention. Referring to FIG. 1, a thin film solar cell panel includes a substrate 10, a first electrode 20 on the substrate, a photoelectric conversion layer 30 on the first electrode, a second electrode 40 on the photoelectric conversion layer 30, and a second electrode. Upper gate electrode 50. The substrate 10 is an ultra-thin glass substrate having a thickness of 0.1 to 1 mm. The ultra-thin glass substrate has flexibility and a minimum bending radius of 10 cm or less. The first electrode 20 is continuously disposed on the substrate 10 during its formation. As a preferred embodiment of the present invention shown in FIG. 1, the photoelectric conversion layer 30 includes an amorphous germanium P-type layer 31, an amorphous germanium germane layer 32, and an amorphous germanium N-type layer 33, a first electrode 20 and a second The electrodes 40 are each made of a zinc oxide material.
基底10選用美國康寧公司（Corning Incorporated）的多款超薄玻璃產品，如蓮花玻璃（Lotus Glass）、柳條玻璃（Willow Glass）、和猩猩玻璃（Gorilla Glass）。第2圖揭示了超薄玻璃的光透射率和光波長的關係。參照第2圖，三種厚度分別為0.05mm、0.1mm和0.2mm的超薄玻璃的光透射率隨光波長的變化關係是相同的，在光波長為200nm到350nm的波段內，透射率隨著波長的增大而迅速增大；當光波長大於350nm的可見光波段時，透射率的增大變慢，並逐漸飽和為一個大於90%的常數。但在上述200-350nm的光波段內，對於特定的波長，超薄玻璃的厚度越小其透射率越大。在現有的薄膜太陽能電池技術中，一般選用厚度為3.2mm的玻璃做基底，由上述結論可知，其對短波長光的透射率遠小於超薄玻璃，導致薄膜電池的透光性較差。因此選用超薄玻璃做基底具有增加光透射率的效果。另外，選用越薄的玻璃做基底，光電轉換層對短波段光的吸收率也越高，從而可以使薄膜太陽能電池的效率提高1-2%。The substrate 10 is made of a variety of ultra-thin glass products from Corning Incorporated, such as Lotus Glass, Willow Glass, and Gorilla Glass. Figure 2 reveals the relationship between the light transmittance of ultra-thin glass and the wavelength of light. Referring to Fig. 2, the optical transmittances of the three ultrathin glasses having thicknesses of 0.05 mm, 0.1 mm, and 0.2 mm are the same as the wavelength of light, and the transmittance is in the wavelength range of 200 nm to 350 nm. The wavelength increases rapidly and increases rapidly; when the wavelength of light is greater than the wavelength of 350 nm, the increase in transmittance becomes slower and gradually saturates to a constant greater than 90%. However, in the above-mentioned optical band of 200-350 nm, the smaller the thickness of the ultra-thin glass, the larger the transmittance for a specific wavelength. In the conventional thin film solar cell technology, a glass having a thickness of 3.2 mm is generally used as a substrate. From the above conclusions, the transmittance to short-wavelength light is much smaller than that of ultra-thin glass, resulting in poor light transmittance of the thin film battery. Therefore, the use of ultra-thin glass as a substrate has an effect of increasing light transmittance. In addition, the thinner glass is used as the substrate, and the photoelectric conversion layer has a higher absorption rate for short-wavelength light, so that the efficiency of the thin film solar cell can be improved by 1-2%.
第3圖顯示了兩種厚度的超薄玻璃的彎曲應力與其彎曲半徑的關係。參照第3圖，厚度為0.2mm的超薄玻璃其對應於任何彎曲半徑的彎曲應力均大於厚度為0.1mm的超薄玻璃。因此玻璃的厚度越小，對應於同一彎曲半徑其彎曲應力就越小，當對其做彎曲加工時就越容易，也越不容易發生破裂。對應於0.1mm的超薄玻璃，在彎曲半徑為10-30cm的較大範圍內，彎曲應力趨近於0，只有當彎曲半徑小於10cm，接近5cm時，彎曲應力才有了顯著上升。將最小彎曲半徑定義為在一定加工條件下，玻璃在達到一特定的閾值應力時的彎曲半徑，則最小半徑越小，玻璃的可彎曲性越好。如果用最小彎曲半徑來表徵超薄玻璃彎曲性的優良程度，由第3圖可知，0.1mm的超薄玻璃具有最優的彎曲性能，其最小彎曲半徑可達10cm以下。Figure 3 shows the relationship between the bending stress and the bending radius of two thicknesses of ultra-thin glass. Referring to Fig. 3, an ultrathin glass having a thickness of 0.2 mm has a bending stress corresponding to any bending radius greater than an ultrathin glass having a thickness of 0.1 mm. Therefore, the smaller the thickness of the glass, the smaller the bending stress corresponding to the same bending radius, and the easier it is to bend it, and the less likely it is to crack. Corresponding to the ultra-thin glass of 0.1 mm, the bending stress approaches 0 in a large range with a bending radius of 10-30 cm, and the bending stress is significantly increased only when the bending radius is less than 10 cm and close to 5 cm. The minimum bend radius is defined as the bend radius of the glass at a certain threshold stress under certain processing conditions, and the smaller the minimum radius, the better the bendability of the glass. If the minimum bending radius is used to characterize the excellent degree of flexibility of the ultra-thin glass, it can be seen from Fig. 3 that the ultra-thin glass of 0.1 mm has an optimum bending property with a minimum bending radius of up to 10 cm or less.
因此選用超薄玻璃做基底10的另一功效是可以方便的將平面的薄膜太陽能電池板加工成具有一定弧度的彎曲電池板，而厚度較小的超薄玻璃可彎曲性好，從而可以製成彎曲半徑較小的太陽能電池板。具體選用何種厚度的超薄玻璃，取決於最終的彎曲電池組件的曲率，曲率越大，則應選用最小彎曲半徑更小的超薄玻璃做基底。Therefore, another function of using the ultra-thin glass as the substrate 10 is that the planar thin-film solar panel can be conveniently processed into a curved panel having a certain curvature, and the ultra-thin glass having a small thickness can be made to be bendable. A solar panel with a small bending radius. The thickness of the ultra-thin glass to be selected depends on the curvature of the final curved battery assembly. The larger the curvature, the thinner glass with a smaller minimum bending radius should be used as the substrate.
但是在實際應用中，選用的超薄玻璃厚度越小，其強度也越小，很容易在外界壓力或雨水沖刷下發生破損。同時在製造過程中也容易破碎，降低生產良率，增加成本。因此，在滿足實際彎曲度需求的前提下，應盡可能選擇更厚的玻璃做基底，以增強基底10的強度。However, in practical applications, the smaller the thickness of the ultra-thin glass selected, the smaller the strength, and it is easy to break under external pressure or rain. At the same time, it is also easy to break in the manufacturing process, reducing production yield and increasing costs. Therefore, under the premise of meeting the actual bending requirements, a thicker glass should be selected as the substrate to enhance the strength of the substrate 10.
一般的，超薄玻璃彎曲時表面的彎曲張應力與其厚度的關係為：In general, the relationship between the bending tensile stress of the surface and the thickness of the ultra-thin glass when bending is:
，,
其中 為最大表面彎曲張應力， 為超薄玻璃的厚度， 為彎曲半徑， 為玻璃的楊氏模量。第4圖給出了更多種厚度的超薄玻璃的彎曲應力和彎曲半徑的關係。參照第4圖，厚度在1mm以下的超薄玻璃的可彎曲性都非常好。在彎曲半徑為30cm時，厚度為0.5mm的超薄玻璃的最大表面彎曲張應力約為60MPa，厚度為0.3mm的超薄玻璃的約為30MPa。若選用0.35mm的超薄玻璃，根據上述公式，代入玻璃的楊氏模量90GPa，可知其最大表面彎曲張應力為52.5MPa。雖然玻璃的固有強度約達200MPa，但在實際應用中要求超薄玻璃的最大表面彎曲張應力在50MPa附近，以防止因表面缺陷造成的破碎。因此，厚度為0.35mm的超薄玻璃可以滿足這種要求。Where is the maximum surface bending tensile stress, the thickness of the ultra-thin glass, and the bending radius, which is the Young's modulus of the glass. Figure 4 shows the relationship between the bending stress and the bending radius of ultrathin glass of various thicknesses. Referring to Fig. 4, the flexibility of the ultra-thin glass having a thickness of 1 mm or less is very good. When the bending radius is 30 cm, the maximum surface bending tensile stress of the ultra-thin glass having a thickness of 0.5 mm is about 60 MPa, and the ultra-thin glass having a thickness of 0.3 mm is about 30 MPa. If an ultra-thin glass of 0.35 mm is used, according to the above formula, the Young's modulus of the glass is 90 GPa, and the maximum surface bending tensile stress is 52.5 MPa. Although the inherent strength of glass is about 200 MPa, in practical applications, the maximum surface bending tensile stress of ultra-thin glass is required to be around 50 MPa to prevent breakage due to surface defects. Therefore, an ultra-thin glass having a thickness of 0.35 mm can satisfy this requirement.
在本發明較佳的實施例中，超薄玻璃基底的彎曲半徑大於30cm，因此超薄玻璃基底的厚度為0.35-1mm。在本發明的進一步較佳的實施例中，為增強超薄玻璃基底的機械強度，超薄玻璃基底的厚度大於0.5mm，或超薄玻璃基底為經過化學鋼化處理的玻璃，例如可以選用康寧公司出產的猩猩玻璃。In a preferred embodiment of the invention, the ultra-thin glass substrate has a bend radius greater than 30 cm, and thus the ultra-thin glass substrate has a thickness of 0.35-1 mm. In a further preferred embodiment of the present invention, in order to enhance the mechanical strength of the ultra-thin glass substrate, the thickness of the ultra-thin glass substrate is greater than 0.5 mm, or the ultra-thin glass substrate is a chemically tempered glass, for example, Corning may be used. The company produces the orangutan glass.
在本發明較佳的實施例中，基底10的彎曲半徑大於1m，參照第4圖，此時可以選用1mm的超薄玻璃作為基底10。In a preferred embodiment of the present invention, the bending radius of the substrate 10 is greater than 1 m. Referring to Figure 4, an ultra-thin glass of 1 mm may be selected as the substrate 10.
相對於聚合物基底，超薄玻璃基底還具有耐高溫，隔絕環境侵蝕性能好的優點。Compared with the polymer substrate, the ultra-thin glass substrate also has the advantages of high temperature resistance and good environmental corrosion resistance.
第一電極20連續設置在基底10上，相對於傳統的在基底上用絕緣物質分割出多個電池塊而言，製程簡單，在應用於彎曲元件時，能夠與彎曲結構緊密結合為一體，較為美觀。The first electrode 20 is continuously disposed on the substrate 10, and the process is simple, and can be closely integrated with the curved structure when applied to the bending element, compared with the conventional method of dividing a plurality of battery blocks with an insulating material on the substrate. Beautiful.
第一電極20與第二電極40的透光性相等，且均為全透明薄膜。全透性薄膜使得更多的陽光能透過汽車天窗或建築物玻璃，有助於提高車廂內或室內的照明亮度。The first electrode 20 and the second electrode 40 have the same light transmittance and are all transparent films. The fully permeable film allows more sunlight to pass through the sunroof or building glass, helping to increase the brightness of the interior or interior of the car.
在本發明的其他實施例中，位於基底10之上的第一電極20為全透明薄膜，位於光電轉換層之上的第二電極40為非全透明薄膜。使用非全透明薄膜做第二電極40有助於將透過光電轉換層30的光反射回光電轉換層中，提高了光吸收率，進而提高了電池效率。In other embodiments of the invention, the first electrode 20 above the substrate 10 is a fully transparent film and the second electrode 40 above the photoelectric conversion layer is a non-transparent film. The use of the non-transparent film as the second electrode 40 helps to reflect the light transmitted through the photoelectric conversion layer 30 back into the photoelectric conversion layer, thereby improving the light absorption rate and further improving the battery efficiency.
第一電極20與第二電極40的材料均為透明導電氧化物，如第1圖所示的本發明的一種較佳的實施例中，第一電極20與第二電極40均為氧化鋅薄膜，在本發明的其他較佳的實施例中，第一電極20、第二電極40還包括選自氧化鋅、氧化錫或石墨烯中的一種。The materials of the first electrode 20 and the second electrode 40 are both transparent conductive oxides. In a preferred embodiment of the invention shown in FIG. 1, the first electrode 20 and the second electrode 40 are both zinc oxide films. In other preferred embodiments of the present invention, the first electrode 20 and the second electrode 40 further include one selected from the group consisting of zinc oxide, tin oxide, and graphene.
光電轉換層30包括非晶矽、微晶矽、多晶矽和單晶矽薄膜中的一種或多種，非晶矽、微晶矽、多晶矽或單晶矽薄膜形成包含一個P-N或P-I-N結的單結結構，或包含多個P-N或P-I-N結的多結結構。The photoelectric conversion layer 30 includes one or more of amorphous germanium, microcrystalline germanium, polycrystalline germanium, and single crystal germanium film, and the amorphous germanium, microcrystalline germanium, polycrystalline germanium or single crystal germanium film forms a single junction structure including a PN or PIN junction. , or a multi-junction structure containing multiple PN or PIN junctions.
在本發明其他較佳的實施例中，光電轉換層30包括選自碲化鎘薄膜、銅銦鎵錫薄膜和有機半導體薄膜中的一種或多種。In other preferred embodiments of the present invention, the photoelectric conversion layer 30 includes one or more selected from the group consisting of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
第5圖為本發明所公開的太陽能汽車天窗的一種較佳的實施方式的示意圖，參照第5圖，太陽能汽車天窗包括：薄膜太陽能電池板和天窗玻璃300。薄膜太陽能電池板包括超薄玻璃基底100和位於超薄玻璃基底100上的薄膜電池組200，薄膜電池組200由第一電極、光電轉換層和第二電極構成。光電轉換層30包括 非晶矽 P型層31、 非晶矽 N型層33，在本發明的某些較佳的實施方式中，光電轉換層30還包括位於 非晶矽 P型層31、 非晶矽 N型層33之間的 非晶矽 I型層32。FIG. 5 is a schematic diagram of a preferred embodiment of a solar vehicle sunroof disclosed in the present invention. Referring to FIG. 5, the solar vehicle sunroof includes: a thin film solar panel and a skylight glass 300. The thin film solar panel includes an ultra-thin glass substrate 100 and a thin film battery pack 200 on the ultra-thin glass substrate 100, which is composed of a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer 30 includes an amorphous germanium P-type layer 31 and an amorphous germanium N-type layer 33. In some preferred embodiments of the present invention, the photoelectric conversion layer 30 further includes an amorphous germanium P-type layer 31, An amorphous germanium type I layer 32 between the germanium N-type layers 33.
汽車天窗玻璃300具有朝向車內的下表面320以及朝向車外的上表面310，薄膜太陽能電池板可以貼合在汽車天窗玻璃300的上表面310上，也可以貼合在天窗玻璃300的下表面320上。參照第5圖和第1圖，當薄膜太陽能電池板貼合在天窗玻璃300的上表面310時， 非晶矽 P型層31緊鄰第一電極20設置。當薄膜太陽能電池板貼合在天窗玻璃300的下表面320時， 非晶矽 N型層33緊鄰第一電極20設置。這樣使得 非晶矽 P型層31始終朝著太陽光的方向。由於非晶矽薄膜中電子的遷移率大於空穴的遷移率，電子的壽命也大於空穴的壽命， 非晶矽 P型層31中產生的電子能通過漂移和擴散運動穿過 非晶矽 I型層32從而被電極收集；但如果 非晶矽 N型層33接受光照產生載流子， 非晶矽 N型層33中產生的空穴由於遷移率和壽命較小，很容易在穿過 非晶矽 I型層32的時候被複合而被損失掉。因此 非晶矽 P型層31始終朝著太陽光的方向有利於提高載流子的收集率，進而提高太陽能電池板的光能量轉換效率。The automotive sunroof glass 300 has a lower surface 320 facing the interior of the vehicle and an upper surface 310 facing the exterior of the vehicle. The thin film solar panel may be attached to the upper surface 310 of the automotive sunroof glass 300 or may be attached to the lower surface 320 of the sunroof glass 300. on. Referring to Figures 5 and 1, when the thin film solar panel is attached to the upper surface 310 of the sunroof glass 300, the amorphous P-type layer 31 is disposed adjacent to the first electrode 20. When the thin film solar cell panel is attached to the lower surface 320 of the sunroof glass 300, the amorphous N-type layer 33 is disposed adjacent to the first electrode 20. This causes the amorphous 矽 P-type layer 31 to always face the direction of sunlight. Since the mobility of electrons in the amorphous germanium film is greater than the mobility of holes, the lifetime of the electrons is also greater than the lifetime of the holes, and the electrons generated in the amorphous germanium P-type layer 31 pass through the amorphous germanium I through drift and diffusion. The type layer 32 is thus collected by the electrode; however, if the amorphous germanium N type layer 33 receives light to generate carriers, the holes generated in the amorphous germanium N type layer 33 are easily passed through the non-transfer due to the small mobility and lifetime. When the wafer type I layer 32 is composited, it is lost. Therefore, the amorphous 矽 P-type layer 31 is always oriented toward the direction of sunlight to improve the collection rate of carriers, thereby improving the light energy conversion efficiency of the solar panel.
在本發明較佳的實施例中，柵電極（圖中未示）通過導線與汽車電源系統及其一負載連接，負載包括車廂內的風扇、照明燈和電子娛樂系統中的至少一種。In a preferred embodiment of the invention, a gate electrode (not shown) is coupled to the automotive power system and a load thereof via a wire, the load including at least one of a fan, a light, and an electronic entertainment system within the vehicle.
在本發明一種較佳的實施例中，天窗玻璃300為具有一定彎曲幅度的剛性玻璃，薄膜太陽能電池板與天窗玻璃彎曲幅度相同。In a preferred embodiment of the present invention, the sunroof glass 300 is a rigid glass having a certain bending amplitude, and the thin film solar panel has the same bending amplitude as the sunroof glass.
在本發明另一種較佳的實施例中，天窗玻璃為剛性玻璃，薄膜太陽能電池板與天窗玻璃的彎曲幅度不同，薄膜太陽能電池板安裝在與天窗玻璃相對應的位置。In another preferred embodiment of the present invention, the sunroof glass is a rigid glass, the thin film solar panel is different from the skylight glass, and the thin film solar panel is installed at a position corresponding to the sunroof glass.
在本發明其他較佳的實施例中，天窗玻璃為沒有彎曲幅度的剛性玻璃，薄膜太陽能電池板安裝在與天窗玻璃相對應的位置。In other preferred embodiments of the invention, the sunroof glass is rigid glass having no bending amplitude, and the thin film solar panel is mounted at a position corresponding to the sunroof glass.
本發明還提供了一種太陽能汽車天窗的製作方法，參照第6圖，製作方法包括如下步驟：The invention also provides a method for manufacturing a solar vehicle sunroof. Referring to FIG. 6, the manufacturing method comprises the following steps:
S1. 提供一成型的汽車天窗玻璃，和一超薄玻璃基底，超薄玻璃基底的厚度為0.1-1mm，超薄玻璃基底具有可彎曲性；S1. providing a molded automobile sunroof glass, and an ultra-thin glass substrate having a thickness of 0.1-1 mm, and the ultra-thin glass substrate is bendable;
S2. 在超薄玻璃基底上依次沉積第一電極、光電轉換層和第二電極，以形成薄膜電池組；S2. sequentially depositing a first electrode, a photoelectric conversion layer and a second electrode on the ultra-thin glass substrate to form a thin film battery;
S3. 用鐳射分別對第一電極、光電轉換層和第二電極進行刻線，用以將薄膜電池組分割成諸多較小的電池單元並做串聯和並聯連接；S3. The first electrode, the photoelectric conversion layer and the second electrode are respectively scribed by laser to divide the thin film battery into a plurality of smaller battery cells and connected in series and in parallel;
S4. 對薄膜電池組做鐳射或化學蝕刻處理，用以提高薄膜電池組的透光性；S4. Performing a laser or chemical etching treatment on the thin film battery to improve the light transmittance of the thin film battery;
S5. 設置柵電極，形成薄膜太陽能電池板；S5. setting a gate electrode to form a thin film solar panel;
S6. 將薄膜太陽能電池板與天窗玻璃結合，使得薄膜電池組被封裝於超薄玻璃基底與天窗玻璃之間，形成可工作的太陽能汽車天窗。S6. Combining thin-film solar panels with skylight glass allows the thin-film battery pack to be packaged between an ultra-thin glass substrate and a skylight glass to form a working solar vehicle sunroof.
本發明所提供的太陽能汽車天窗中的薄膜太陽能電池板在各層薄膜在形成過程中都是連續的，只是在鍍膜完成之後的步驟S3中才用鐳射刻線切割成較小的電池單元，因而製作製程更為簡單，提高了製備效率，也使得薄膜太陽能電池板與彎曲的天窗玻璃緊密貼合，呈一體化結構，外表更為美觀。The thin film solar panel in the solar vehicle sunroof provided by the invention is continuous in the formation process of each layer of the film, but is cut into smaller battery cells by laser reticle in step S3 after the coating is completed, thereby making The process is simpler, the preparation efficiency is improved, and the thin film solar panel is closely adhered to the curved sunroof glass, and has an integrated structure, and the appearance is more beautiful.
本發明所提供的太陽能汽車天窗的製作方法將具有可彎曲超薄玻璃基底的太陽能電池板與天窗玻璃通過彎曲處理直接結合，形成牢固的具有一定弧度的太陽能電池板，由於在鍍膜過程中超薄玻璃基底仍處於平面形式，製程條件都不需要做任何改變，避免了通常在製造彎曲電池板時所遇到的問題和額外成本的增加，極大的增加了設備和製備製程方法對各種彎曲幅度的天窗玻璃的普遍適用性。因此，本發明所提供的太陽能汽車天窗的製作方法適用於製造各種彎曲幅度的太陽能汽車天窗。The solar cell sunroof provided by the invention provides a solar panel with a flexible ultra-thin glass substrate and a skylight glass directly combined by bending treatment to form a solid solar panel with a certain curvature, which is ultra-thin during the coating process. The glass substrate is still in a flat form, and the process conditions do not need to be changed, avoiding the problems and additional cost that are usually encountered in the manufacture of curved panels, greatly increasing the equipment and the manufacturing process for various bending ranges. The universal applicability of skylight glass. Therefore, the manufacturing method of the solar vehicle sunroof provided by the present invention is suitable for manufacturing solar vehicle sunroof of various bending widths.
在本發明較佳的實施方式中，使用層壓製程將薄膜太陽能電池板與天窗玻璃結合，用以封裝薄膜太陽能電池板，使其與周圍環境相隔絕，並形成可穩定工作的太陽能汽車天窗。層壓製程在高壓釜中進行，或採用曲面真空層壓法進行層壓。層壓製程的材料選用合成乙烯樹脂（EVA）、聚乙烯縮丁醛（PVB）或離子鍵樹脂。In a preferred embodiment of the invention, a thin film solar panel is bonded to the skylight glass using a lamination process to encapsulate the thin film solar panel from the surrounding environment and form a solar car sunroof that is stable in operation. The lamination process is carried out in an autoclave or by a curved vacuum lamination method. The material of the lamination process is synthetic vinyl resin (EVA), polyvinyl butyral (PVB) or ionomer resin.
在本發明其他較佳的實施方式中，採用黏結製程將薄膜太陽能電池板與天窗玻璃相結合，形成可穩定工作的太陽能汽車天窗。黏結製程選用杜邦公司生產的“文泰科”（Vertak）黏結劑。In other preferred embodiments of the present invention, a thin film solar panel is combined with a skylight glass by a bonding process to form a solar car sunroof that can work stably. The bonding process uses the Vertak adhesive produced by DuPont.
在本發明較佳的實施方式中，第一電極和第二電極的透光性相等，且均為全透明薄膜。這提高了薄膜太陽能電池板的透光性。在本發明的其他實施方式中，第一電極為全透明薄膜，第二電極為非透明薄膜。非透明薄膜可以將透過光電轉換層的光反射回去，提高了電池的光吸收率和效率。In a preferred embodiment of the present invention, the first electrode and the second electrode have the same light transmittance and are all transparent films. This improves the light transmission of the thin film solar panel. In other embodiments of the invention, the first electrode is a fully transparent film and the second electrode is a non-transparent film. The non-transparent film can reflect the light transmitted through the photoelectric conversion layer, thereby improving the light absorption rate and efficiency of the battery.
第一電極與第二電極的材料均為透明導電氧化物，透明導電氧化物為氧化鋅、氧化錫、氧化銦錫和石墨烯中的一種。The materials of the first electrode and the second electrode are both transparent conductive oxides, and the transparent conductive oxide is one of zinc oxide, tin oxide, indium tin oxide and graphene.
光電轉換層包括非晶矽、微晶矽、多晶矽和單晶矽薄膜中的一種或多種，如第1圖所示的本發明的較佳的實施例中，光電轉換層為由非晶矽N型摻雜層33、固有層32和P型摻雜層31構成的P-I-N型結構。一般的，光電轉換層30包含由非晶矽、微晶矽、多晶矽或單晶矽薄膜形成的P-N或P-I-N結單結結構，或多個P-N結及P-I-N結的多結結構。在本發明的其他較佳的實施例中，光電轉換層30包括選自碲化鎘薄膜、銅銦鎵錫薄膜和有機半導體薄膜中的一種或多種。The photoelectric conversion layer includes one or more of amorphous germanium, microcrystalline germanium, polycrystalline germanium, and single crystal germanium film. In the preferred embodiment of the invention shown in FIG. 1, the photoelectric conversion layer is made of amorphous germanium N. The PIN type structure composed of the doped layer 33, the lamina propria 32, and the P-type doped layer 31. In general, the photoelectric conversion layer 30 includes a P-N or P-I-N junction single junction structure formed of an amorphous germanium, a microcrystalline germanium, a polycrystalline germanium or a single crystal germanium thin film, or a multi-junction structure of a plurality of P-N junctions and a P-I-N junction. In other preferred embodiments of the present invention, the photoelectric conversion layer 30 includes one or more selected from the group consisting of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
當用於製備第一電極20、第二電極40或光電轉換層30的製程方法的製程溫度接近玻璃應變點（strain point）時，超薄玻璃容易產生變形，因而應該盡可能使製程溫度遠離玻璃應變點。超薄玻璃的應變點的變化範圍為650-700oC，其他超薄玻璃的應變點也在類似的範圍內變動。因此，製程方法的製程溫度低於600oC，以防止超薄玻璃基底在沉積過程中發生變形。When the process temperature of the process for preparing the first electrode 20, the second electrode 40, or the photoelectric conversion layer 30 is close to the glass strain point, the ultra-thin glass is easily deformed, and thus the process temperature should be kept as far as possible from the glass. Strain point. The strain point of ultra-thin glass varies from 650 to 700oC, and the strain points of other ultra-thin glass also vary within a similar range. Therefore, the process temperature of the process is less than 600oC to prevent deformation of the ultra-thin glass substrate during deposition.
一般的，用於製備透明氧化物薄膜的低壓化學氣相沉積（LPCVD）方法的製程溫度為180-210oC，有機金屬化學氣相沉積（MOCVD）方法的製程溫度可低至500oC，而常壓化學氣相沉積（APCVD）方法的製程溫度在450oC左右，用於製備矽基光電轉換層薄膜的等離子增強化學氣相沉積（PECVD）的製程溫度一般在300oC以下，以上製程方法都滿足製程溫度小於600oC的要求。因此，第一電極、第二電極用低壓化學氣相沉積（LPCVD）、有機金屬化學氣相沉積（MOCVD）或常壓化學氣相沉積（APCVD）製程方法製備，光電轉換層用等離子增強化學氣相沉積（PECVD）製程方法製備。In general, low pressure chemical vapor deposition (LPCVD) methods for preparing transparent oxide films have a process temperature of 180-210 ° C, and organometallic chemical vapor deposition (MOCVD) processes have process temperatures as low as 500 ° C, while atmospheric pressure chemistry The process temperature of the vapor phase deposition (APCVD) method is about 450oC, and the process temperature for plasma-enhanced chemical vapor deposition (PECVD) for preparing the ruthenium-based photoelectric conversion layer film is generally below 300oC, and the above process methods all satisfy the process temperature of less than 600oC. Requirements. Therefore, the first electrode and the second electrode are prepared by low pressure chemical vapor deposition (LPCVD), organometallic chemical vapor deposition (MOCVD) or atmospheric pressure chemical vapor deposition (APCVD) processes, and plasma enhanced chemical gas for the photoelectric conversion layer. Prepared by a phase deposition (PECVD) process.
雖然本發明已以較佳實施例揭示如上，但本發明並非限定於此。任何本技術領域通常知識者，在不脫離本發明的精神和範圍內，均可作各種更動與修改，因此本發明的保護範圍應當以申請專利範圍所限定的範圍為準。對於本技術領域通常知識者而言，顯然本發明不限於上述示範性實施例的細節，而且在不背離本發明的精神或基本特徵的情況下，能夠以其他的具體形式實現本發明。因此，無論從哪一點來看，均應將實施例看作是示範性的，而且是非限制性的，本發明的範圍由所附的申請專利範圍來限定而不是上述說明限定，因此旨在將落在申請專利範圍的等同要件的含義和範圍內的所有變化囊括在本發明內。不應將說明書中的任何附圖標記視為限制所涉及的申請專利範圍。Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope of the claims. It is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments are to be considered as illustrative and not restrictive, and the scope of the invention is defined by the scope of the appended claims All changes that come within the meaning and range of equivalents of the scope of the claims are included in the invention. Any reference signs in the specification should not be considered as limiting the scope of the patent application involved.
此外，應當理解，雖然本說明書按照實施方式加以描述，但並非每個實施方式僅包含一個獨立的技術方案，說明書的這種敘述方式僅僅是為清楚起見，本技術領域通常知識者應當將說明書作為一個整體，各實施例中的技術方案也可以經適當組合，形成本技術領域通常知識者可以理解的其他實施方式。此外，應當理解，雖然本說明書按照實施方式加以描述，但並非每個實施方式僅包含一個獨立的技術方案，說明書的這種敘述方式僅僅是為清楚起見，本領域技術人員應當將說明書作為一個整體，各實施例中的技術方案也可以經適當組合，形成本技術領域通常知識者可以理解的其他實施方式。In addition, it should be understood that although the description is described in terms of embodiments, not every embodiment includes only one independent technical solution, and the description of the specification is merely for the sake of clarity, and those skilled in the art should As a whole, the technical solutions in the various embodiments may also be combined as appropriate to form other embodiments that can be understood by those of ordinary skill in the art. In addition, it should be understood that although the description is described in terms of embodiments, not every embodiment includes only one independent technical solution. The description of the specification is merely for the sake of clarity, and those skilled in the art should In general, the technical solutions in the various embodiments may also be combined as appropriate to form other embodiments that can be understood by those of ordinary skill in the art.
100．．．超薄玻璃基底100. . . Ultra-thin glass substrate
200．．．薄膜電池組200. . . Thin film battery pack
300．．．天窗玻璃300. . . Skylight glass
310．．．上表面310. . . Upper surface
320．．．下表面320. . . lower surface
Claims (37)
提供一成型的汽車天窗玻璃，和一超薄玻璃基底，該超薄玻璃基底的厚度為0.1-1mm，該超薄玻璃基底具有可彎曲性；
在該超薄玻璃基底上依次沉積一第一電極、一光電轉換層和一第二電極，以形成一薄膜電池組；
用鐳射分別對該第一電極、該光電轉換層和該第二電極進行刻線，用以將該薄膜電池組分割成複數個較小的電池單元並做串聯和並聯連接；
對該薄膜電池組做鐳射或化學蝕刻處理，用以提高該薄膜電池組的透光性；
設置該柵電極，形成一薄膜太陽能電池板；
將該薄膜太陽能電池板與該天窗玻璃結合，使得該薄膜電池組被封裝於該超薄玻璃基底與該天窗玻璃之間，形成可工作的該太陽能汽車天窗。A method for manufacturing a solar vehicle sunroof according to any one of claims 1-17, comprising:
Providing a molded automotive sunroof glass, and an ultra-thin glass substrate having a thickness of 0.1 to 1 mm, the ultra-thin glass substrate having flexibility;
Depositing a first electrode, a photoelectric conversion layer and a second electrode on the ultra-thin glass substrate to form a thin film battery;
Separating the first electrode, the photoelectric conversion layer and the second electrode by laser, respectively, for dividing the thin film battery into a plurality of smaller battery cells and connecting them in series and in parallel;
Performing a laser or chemical etching treatment on the thin film battery to improve the light transmittance of the thin film battery;
Providing the gate electrode to form a thin film solar panel;
The thin film solar panel is combined with the skylight glass such that the thin film battery pack is packaged between the ultra-thin glass substrate and the skylight glass to form a workable solar vehicle sunroof.
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2013
- 2013-05-07 CN CN201310164794.0A patent/CN103296114B/en active Active
-
2014
- 2014-05-04 WO PCT/CN2014/076728 patent/WO2014180282A1/en active Application Filing
- 2014-05-07 TW TW103116229A patent/TWI517425B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103296114B (en) | 2015-09-23 |
| WO2014180282A1 (en) | 2014-11-13 |
| CN103296114A (en) | 2013-09-11 |
| TWI517425B (en) | 2016-01-11 |
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