CN201708164U - Film system for thin film solar cell and thin film solar cell - Google Patents
Film system for thin film solar cell and thin film solar cell Download PDFInfo
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- CN201708164U CN201708164U CN201020129601XU CN201020129601U CN201708164U CN 201708164 U CN201708164 U CN 201708164U CN 201020129601X U CN201020129601X U CN 201020129601XU CN 201020129601 U CN201020129601 U CN 201020129601U CN 201708164 U CN201708164 U CN 201708164U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The utility model discloses a film system for a thin film solar cell and further discloses the thin film solar cell having the film system. The film system comprises a p-i-n photoelectric unit, wherein a heavily doped P+ layer and a heavily doped N+ layer are arranged on the pth and nth layers of the p-i-n photoelectric unit respectively; and the film system has a structure of P+/p-i-n/N+. The heavily doped P+ layer and N+ layer have the effect of reducing the compounding and retention of an electrified body and drift velocities of an electric hole and an electron in a semiconductor are increased due to the torsion reduction of the electric field in the ith layer. The film system for the thin film solar cell has a photoelectric conversion rate as high as 7.5 percent and a low cost.
Description
Technical field
The utility model relates to a kind of film system of thin film solar cell and the thin film solar cell that adopts this film system, belongs to photovoltaic solar battery technology field.
Background technology
Along with worldwide nervous and short of the energy, people improve day by day to the attention degree that taps a new source of energy, and especially pay attention to day by day with the development and utilization of the green energy resource headed by the solar energy.Solar energy is subjected to extensive concern and favor with special advantages such as its pollution-free, no region restriction and round-the-clock utilization.
Based on maturity, reliability, low cost, be easy to be used in combination with other film photovoltaic materials, and have can matching design, preparation method's progress and the characteristic of improved process technology, the film photovoltaic module technology of preparing of thin film solar cell becomes the most potential a kind of solar cell industry.But the present low problem of film photovoltaic module ubiquity photoelectric conversion rate still about 6%, has restricted the application and the development of thin film solar cell so far.Wherein, the film structure of thin film solar cell is one of key factor that influences film photovoltaic module photoelectric conversion rate.Present amorphous or microcrystal silicon system, electrode and film complex centre, very high electronics electricity hole arranged at the interface, the district that dissipates is wide, is unfavorable for that charge carrier reaches corresponding electrode.Charge carrier diffusion length in amorphous or the microcrystal silicon material is short, the complex centre height, so the drift velocity of carrier needs to strengthen.Because the tail band of suspension key formation can also form the center that a positive load combines again with being with the defective between system in rank,, also influence the drift velocity of charge carrier because of the electric field of suspension key and tail band energy rank and the regional distortion that forms of many defect interface.
The utility model content
The purpose of this utility model provides a kind of film system of thin film solar cell, and the purpose of this utility model also is to provide a kind of thin film solar cell that adopts this film system.
In order to realize above purpose, the technical scheme that the utility model adopted is:
A kind of film system of thin film solar cell, this film system comprises a p-i-n photovoltaic element, the p layer of described p-i-n photovoltaic element is provided with heavily doped P
+Layer, the n layer of described p-i-n photovoltaic element is provided with heavily doped N
+Layer, this film structure is P
+/ p-i-n/N
+
Wherein, described film is amorphous silicon film system or microcrystalline sillicon film system.Described P
+The layer impurity content greater than the p layer, described N
+The impurity content of layer is greater than the n layer.Described P
+The concentration of the alloy of layer and the concentration ratio of silicon atom are (5～100): 100000, and described N
+The concentration of the alloy of layer and the concentration ratio of silicon atom are (5～100): 100000.
Described P
+The layer thickness less than the p layer, described N
+The thickness of layer is less than the n layer.The thickness ratio of the p layer of described p-i-n photovoltaic element, i layer, n layer is 2: (6～10): 3.
A kind of thin film solar cell, comprise substrate, be arranged on transparency conducting layer, the back electrode on the substrate and be arranged on transparency conducting layer and back electrode between solar cell film system, described film is to comprise a p-i-n photovoltaic element, and the p layer of described p-i-n photovoltaic element is provided with heavily doped P
+Layer, the n layer of described p-i-n photovoltaic element is provided with heavily doped N
+Layer, this film structure is P
+/ p-i-n/N
+
Wherein, described film is amorphous silicon film system or microcrystalline sillicon film system.
Distribution about pure amorphous area carrier, there are five sections of branch to say, first district is occupied by the electric charge on tail band energy rank, it then is the carrier district, space that constitutes by nominal price suspension key, being one then almost is the neutral zone of waiting electric field, then being an electronegative suspension keypad again, is another conduction tail zone of being made up of the space carrier at last.This analytical model shows, has a kind of electric field of distortion in pure amorphous silicon i layer, and this electric field has limited the drift of carrier stream.Microcrystal silicon is nanometer or the micron silicon crystal that is formed by silicon atom, and the arrangement between each small crystals is disorderly and unsystematic, so be referred to as microcrystal silicon.Usually present column microstructure clearly in the micro crystal silicon solar battery, middle crack and crystal region form pyramidal structure.Sometimes its crack may extend in the i layer, and the tail band connection that produces because of the suspension key forms the center that positive and negative carrier combines again with being with the defective between system, thereby produces the distortion of electric field, therefore, has reduced the drift velocity of carrier.
The utility model is provided with heavily doped P respectively outside the p-i-n photovoltaic element
+Layer and N
+Layer, P
+Layer can reduce free carrier with combining then of P layer, the trap effect in the electric hole of nominal price especially, and the district that dissipates shortens, and the possibility of charge carrier electricity hole arrival positive electrode increases; N
+Layer is to the effect and the P of electronics
+Layer is identical to the effect in electric hole, and then promotes conversion efficiency.Because N
+, P
+The introducing of layer can correspondingly reduce the thickness of n layer and p layer, and the collection effect of the low-energy charge carrier that electrode pair i layer is produced improves; Because the raising of electrode pair carrier collection efficient, the i layer thickness reduces the influence of battery efficiency, and this makes that the rate of manufacturing a finished product is improved.Therefore the colourity of solar cell and conversion efficiency are also improved.The reduction of layer internal electric field torsion resistance with the adaptability increase of thickness, can help to reduce the production cost of battery, simultaneously P
+, N
+The introducing of layer has improved the photoelectric conversion factors attenuation characteristic of battery.
Heavily doped P
+Layer and N
+Layer has the effect of lowering electrified body plyability and anelasticity, has increased electric hole and the drift velocity of electronics in semiconductor because of the torsion resistance that lowers electric field in the i layer simultaneously.The film of the utility model thin film solar cell is the photoelectric conversion rate height, and cost is low, and the photoelectric conversion rate of the thin film solar cell that the utility model makes reaches 7.5%.
Description of drawings
Fig. 1 is the structural representation of the thin film solar cell film system of the embodiment of the invention 1;
Fig. 2 is the structural representation of the thin film solar cell film system of the embodiment of the invention 2;
Fig. 3 is the structural representation of the thin film solar cell of the embodiment of the invention 3;
Fig. 4 is the structural representation of the thin film solar cell of the embodiment of the invention 4.
Embodiment
See shown in Figure 1, a kind of film of thin film solar cell system, this film system is by forming with the lower part:
Heavily doped P
+Type amorphous silicon layer 1;
Be arranged on P
+Amorphous silicon p-i-n photovoltaic element on one of them face of type amorphous silicon layer 1, this amorphous silicon p-i-n photovoltaic element is by being arranged on P
+P type amorphous silicon layer 2 on one of them face of type amorphous silicon layer 1, be arranged on i type amorphous silicon layer 3 on the p type amorphous silicon layer 2, the n type amorphous silicon layer 4 that is arranged on the i type amorphous silicon layer 3 forms;
Be arranged on the heavily doped N on the n type amorphous silicon layer 4
+Type amorphous silicon layer 5.
See shown in Figure 2, a kind of film of thin film solar cell system, this film system is by forming with the lower part:
Heavily doped P
+Type microcrystal silicon layer 12;
Be arranged on P
+Microcrystal silicon p-i-n photovoltaic element on one of them face of type microcrystal silicon layer 12, this microcrystal silicon p-i-n photovoltaic element is by being arranged on P
+P type microcrystal silicon layer 13 on one of them face of type microcrystal silicon layer 12, be arranged on i type microcrystal silicon layer 14 on the p type microcrystal silicon layer 13, the n type microcrystal silicon layer 15 that is arranged on the i type microcrystal silicon layer 14 forms;
Be arranged on the heavily doped N on the n type microcrystal silicon layer 15
+Type microcrystal silicon layer 16.
See shown in Figure 3, a kind of thin film solar cell, the film photovoltaic module of this thin film solar cell is: along the incident light direction, be glass substrate 6 successively, be arranged on nesa coating (TCO) 7 on the glass substrate 6, be arranged on the P on the nesa coating (TCO) 7
+Type amorphous silicon layer 1, be arranged on P
+P type amorphous silicon layer 2 on the type amorphous silicon layer 1, be arranged on i type amorphous silicon layer 3 on the p type amorphous silicon layer 2, be arranged on n type amorphous silicon layer 4 on the i type amorphous silicon layer 3, be arranged on the N on the n type amorphous silicon layer 4
+Type amorphous silicon layer 5, be arranged on N
+ZnO layer 8 on the type amorphous silicon layer 5, be arranged on Al layer 9 on the ZnO layer 8, be arranged on gummed film (EVA) layer 10 on the Al layer 9, be arranged on the back-panel glass 11 on gummed film (EVA) layer 10,, make amorphous silicon film solar battery through the lamination of heating, encapsulation.
See shown in Figure 4, a kind of thin film solar cell, the film photovoltaic module of this thin film solar cell is: along the incident light direction, be glass substrate 17 successively, be arranged on nesa coating (TCO) 18 on the glass substrate 17, be arranged on the P on the nesa coating (TCO) 18
+Type microcrystal silicon layer 12, be arranged on P
+P type microcrystal silicon layer 13 on the type microcrystal silicon layer 12, be arranged on i type microcrystal silicon layer 14 on the p type microcrystal silicon layer 13, be arranged on n type microcrystal silicon layer 15 on the i type microcrystal silicon layer 14, be arranged on the N on the n type microcrystal silicon layer 15
+Type microcrystal silicon layer 16, be arranged on N
+ZnO layer 19 on the type microcrystal silicon layer 16, be arranged on Al layer 20 on the ZnO layer 19, be arranged on gummed film (EVA) layer 21 on the Al layer 20, be arranged on the back-panel glass 22 on gummed film (EVA) layer 21, through the lamination of heating, encapsulation, make microcrystalline silicon solar cell.
Claims (7)
1. the film of thin film solar cell system is characterized in that, this film system comprises a p-i-n photovoltaic element, and the p layer of described p-i-n photovoltaic element is provided with heavily doped P
+Layer, the n layer of described p-i-n photovoltaic element is provided with heavily doped N
+Layer, this film structure is P
+/ p-i-n/N
+
2. the film of thin film solar cell according to claim 1 system is characterized in that, described film is amorphous silicon film system or microcrystalline sillicon film system.
3. the film of thin film solar cell according to claim 1 system is characterized in that described P
+The layer impurity content greater than the p layer, described N
+The impurity content of layer is greater than the n layer.
4. the film of thin film solar cell according to claim 1 system is characterized in that described P
+The layer thickness less than the p layer, described N
+The thickness of layer is less than the n layer.
5. the film of thin film solar cell according to claim 1 system is characterized in that the thickness ratio of the p layer of described p-i-n photovoltaic element, i layer, n layer is 2: (6～10): 3.
6. thin film solar cell, comprise substrate, be arranged on transparency conducting layer, the back electrode on the substrate and be arranged on transparency conducting layer and back electrode between solar cell film system, it is characterized in that, described film is to comprise a p-i-n photovoltaic element, and the p layer of described p-i-n photovoltaic element is provided with heavily doped P
+Layer, the n layer of described p-i-n photovoltaic element is provided with heavily doped N
+Layer, this film structure is P
+/ p-i-n/N+.
7. thin film solar cell according to claim 6 is characterized in that, described film is amorphous silicon film system or microcrystalline sillicon film system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020129601XU CN201708164U (en) | 2010-03-12 | 2010-03-12 | Film system for thin film solar cell and thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020129601XU CN201708164U (en) | 2010-03-12 | 2010-03-12 | Film system for thin film solar cell and thin film solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN201708164U true CN201708164U (en) | 2011-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020129601XU Expired - Fee Related CN201708164U (en) | 2010-03-12 | 2010-03-12 | Film system for thin film solar cell and thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018214870A1 (en) * | 2017-05-25 | 2018-11-29 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell preparation method and heterojunction solar cell |
-
2010
- 2010-03-12 CN CN201020129601XU patent/CN201708164U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018214870A1 (en) * | 2017-05-25 | 2018-11-29 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell preparation method and heterojunction solar cell |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20130312 |