CN108417653A - A kind of solar telephone skylight product and production method - Google Patents
A kind of solar telephone skylight product and production method Download PDFInfo
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- CN108417653A CN108417653A CN201810178707.XA CN201810178707A CN108417653A CN 108417653 A CN108417653 A CN 108417653A CN 201810178707 A CN201810178707 A CN 201810178707A CN 108417653 A CN108417653 A CN 108417653A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims abstract description 42
- 239000012790 adhesive layer Substances 0.000 claims abstract description 23
- 238000005496 tempering Methods 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 19
- 239000005361 soda-lime glass Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 14
- 238000005086 pumping Methods 0.000 claims description 8
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000013064 chemical raw material Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000005342 ion exchange Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000005622 photoelectricity Effects 0.000 claims 1
- 239000000779 smoke Substances 0.000 claims 1
- 239000000047 product Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910001408 cation oxide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60J—WINDOWS, WINDSCREENS, NON-FIXED ROOFS, DOORS, OR SIMILAR DEVICES FOR VEHICLES; REMOVABLE EXTERNAL PROTECTIVE COVERINGS SPECIALLY ADAPTED FOR VEHICLES
- B60J7/00—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/80—Technologies aiming to reduce greenhouse gasses emissions common to all road transportation technologies
- Y02T10/90—Energy harvesting concepts as power supply for auxiliaries' energy consumption, e.g. photovoltaic sun-roof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar telephone skylight products, including skylight glass, solar chip and back-panel glass, first electrode layer on ultra-thin glass substrate, photoelectric conversion layer in first electrode layer, second electrode on photoelectric conversion layer and electrode slice, solar chip is set to by adhesive layer between the skylight glass and back-panel glass, the deep and longitudinal maximum arc of laterally maximum arc of skylight glass be respectively less than 20mm/m deeply, the thickness of ultra-thin glass substrate is 0.33~1mm, ultra-thin glass substrate is the soda-lime glass by chemical tempering, the surface stress value of ultra-thin glass substrate is 400~600Mpa.It can ensure that ultra-thin glass substrate is closed in the skylight glass for being respectively less than 20mm/m deeply with the deep and longitudinal maximum arc of laterally maximum arc during piece makes solar energy skylight glass product not breaking up.The present invention also improves a kind of production method of above-mentioned solar telephone skylight product.
Description
Technical field：
The present invention relates to photovoltaic application product field more particularly to a kind of solar telephone skylight product and making
Method.
Background technology：
Solar energy is a kind of inexhaustible new cleaning fuel.With other novel energies such as wind energy, nuclear energy
It compares, since sunlight is ubiquitous, solar energy is also admirably suitable for doing and disperses, is small other than being suitble to large-scale grid connection power generation
Sizable application.The earliest small-scale application of solar energy power generating can trace back to the solar chip plate on artificial satellite.Nowadays,
Solar chip plate is usually placed on building roof by people, or is installed on the various vehicles to supplement daily energy consumption
Deficiency.
Solar energy roof system is the product that solar energy generation technology is combined with auto industry.By solar chip or too
Positive energy component is embedded into the region for receiving solar irradiation on vehicle top, electric energy can be converted sunlight into, for supporting sending out
When motivation is stopped, it is still desirable to which some functions of electric energy support, such as the interior of hot weather are divulged information, and are polluted under environment
In-vehicle air purifies, auto security system, car refrigerator etc., to reduce dependence of these functions to accumulator, reduces electric power storage
The loss in pond.With the rise of electric vehicle and the development of heliotechnics, the electricity that solar energy roof system is generated is used
Make automobile power and also has changed into reality.Solar energy roof system not only increases the comfort of automobile, and can bring bright
The saving of aobvious electric energy and fuel oil, reduces the discharge of carbon dioxide.
Automobile solar energy skylight structure is usually that arrange among curved glass solar chip, glass and chip are dried at two layers
Between bonded with PVB, as Authorization Notice No. be CN101973324B Chinese invention patent propose solar telephone folder
Layer glass and preparation method thereof, this method, which uses, closes solar chip among interior sheet glass and outer sheet glass, is suitble to batch
Production.But will be dried among curved vehicle glass as the crystal silicon of solar chip arrangement interlayer two panels, due to complex process, step
Rapid various, yield rate is low, simultaneously because the size of vehicle glass is fixed, so can also cause edge certain area that can not arrange
It is also fixed-size solar chip, and the opacity of silicon die makes skylight lose vitreous person's character.
Due to the above problems, it is on a ultra-thin glass substrate that solar telephone skylight field, which uses more structure, now
The photovoltaic materials such as non-crystalline silicon are plated, ultra-thin glass substrate is then bonded in the upper of skylight glass as solar chip, is such as awarded
The solar telephone skylight and preparation method thereof that the Chinese patent that power bulletin is CN103296114B proposes, the patent use super
Thin glass substrate has the effect of increasing light transmittance, and flexible is good, can be conveniently used for making various bending amplitudes
Solar telephone skylight.But this method has certain meaning for the skylight of arch (one-dimensional bending), for dome-shaped (two
Dimension bending) for skylight, laterally maximum arc deep (direction of traffic) and longitudinal maximum arc are deep all bigger, and the method can not simultaneously more
The bending (double curved glass) for mending both direction, can cause ultra-thin glass edges of substrate to be ruptured by prodigious stress, or
Cause the center portion glass of skylight to be combined with glass insufficient, causes bubble or hollowing.And in reality, most of automobile days
Window is all dome-shaped, and monocrystalline silicon piece used by solar chip, polysilicon chip, and using glass as the non-crystalline silicon of substrate,
Cadmium telluride and CIGS etc. are mostly fragile material, and are planar structures, and solar chip to be made to fit to the automobile day of dome-shaped
On the curved surface of window, usually to make solar chip that the plastic deformation with the SURFACES MATCHING of vehicle dormer window occur.And ultra-thin glass serves as a contrast
Although bottom has certain soft but strength rigid inadequate, fragmentation is easy in the production process for solar chip, therefore
Ultra-thin glass substrate generally can all select the higher chemically toughened glass of surface stress, and generally all surface stress can be selected big
In the chemically toughened glass of 640Mpa, although chemical tempering can improve the surface stress of ultra-thin glass substrate, enhance ultra-thin glass
The mechanical strength of glass substrate, but by experimental studies have found that after chemical tempering, then solar energy is made in ultra-thin glass substrate
Chip can lead to the decrease in efficiency of solar chip.The analysis found that the surface stress that chemical tempering reaches is higher, glass
The ion that glass precipitate into surface is more, and the surface of glass becomes not smooth enough, so as to cause the opto-electronic conversion of glass surface is plated in
The flatness of layer is affected, and leads to the decline of the photoelectric conversion efficiency of solar chip.
Invention content：
The present invention is to provide a kind of solar telephone skylight product and making in order to avoid above-mentioned existing shortcoming
Method, it is provided by the present invention to have the bi-curved solar telephone skylight product of certain curvature in process of production be easily
It is broken, and have higher photoelectric conversion efficiency.
The present invention is that technical solution used by solving aforementioned technical problem is as follows：
A kind of solar telephone skylight product, the solar energy skylight product include skylight glass, solar chip, backboard
Glass and adhesive layer；The solar chip includes one layer of curve form ultra-thin glass substrate identical with skylight glass, position
In the first electrode layer on the ultra-thin glass substrate, the photoelectric conversion layer in the first electrode layer, it is located at the light
The second electrode lay on electric conversion layer and electrode slice；The upper and lower surface of the solar chip is set to by adhesive layer described
Between skylight glass and back-panel glass, which is characterized in that the deep and longitudinal maximum arc of laterally maximum arc of the skylight glass is deep
The thickness of respectively less than 20mm/m, the ultra-thin glass substrate are 0.33~1mm, and the ultra-thin glass substrate is by chemical tempering
Soda-lime glass, the surface stress value of the ultra-thin glass substrate is 400~600Mpa.It is obtained according to a large amount of experiment and data
Go out, during the chemical tempering of ultra-thin glass substrate, the surface stress of ultra-thin glass substrate controlled in 400~600Mpa,
It can either ensure that ultra-thin glass substrate is closed in the skylight glass for being respectively less than 20mm/m deeply with the deep and longitudinal maximum arc of laterally maximum arc
Piece is not broken up during making solar energy skylight glass product, while being also effectively controlled chemical tempering to ultra-thin glass
The influence of the decrease in efficiency of substrate ensures the transformation efficiency of solar chip of the ultra-thin glass substrate after chemical tempering
It can also keep 80% or more of original photoelectric conversion efficiency.
Wherein, the photoelectric conversion layer includes one kind or more in non-crystalline silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film
Kind.
Wherein, the first electrode layer, the second electrode lay material be zinc oxide, tin oxide or tin indium oxide one kind.
The ingredient of this kind of thin-film material is unformed heavy metal cation oxide, with conductive materials carbon phase ratio, has lot of advantages, phase
For organic polymer conductive materials, also there is higher flexibility and chemical stability；Easy to manufacture, it is also harder
Firmly.At ambient temperature, this kind of material is with regard to good performance.The material is unformed, can without too long of crystal structure chain
Manufacturing expense is set to substantially reduce；Also stretchable, anticorrosion, chemical substance are stablized, and surface is smooth.
Wherein, the thickness of the adhesive layer is 0.33~0.4mm.
Wherein, the material of the adhesive layer is ethylene-vinyl acetate copolymer EVA or polyvinyl butyral
The high polymer POE of PVB or ethylene and butylene.Wherein, preferred POE films for more currently used POE EVA and PVB, have
Better thermal stability, resists dry and cracked performance at optical property, has high visible, ultraviolet light transmittance and lower mist degree, simultaneously
Also there is good flexibility, molding performance, and its is cheap.
Wherein, the back-panel glass is the soda-lime glass by chemical tempering, or the aluminium silicon salt glass by chemical tempering
Glass.To increase the mechanical strength of back-panel glass.
Wherein, the surface stress value of the back-panel glass is more than 600Mpa.By experimental test, the surface of back-panel glass is answered
Force value does not interfere with the photoelectric conversion efficiency of solar energy skylight glass, therefore the chemical tempering for selecting surface stress value big as far as possible
Glass is as back-panel glass, integrally to promote the mechanical strength of solar energy skylight glass.
The present invention also provides a kind of production methods of solar telephone skylight comprising following steps：
Step 1：Molding skylight glass and the back of the body that the deep and longitudinal maximum arc of laterally maximum arc is respectively less than 20mm/m deeply are provided
Glass sheet；
Step 2：The ultra-thin glass that thickness is 0.33~1mm is cut into the apparent size needed for skylight glass, as too
The ultra-thin glass substrate of positive energy chip；
Step 3：Ultra-thin glass substrate is put into the fused salt slot of the chemical raw material containing potassium nitrate, in 380~460 DEG C of items
Under part, the ion-exchange treatment of 30~70min is carried out；
Step 4：The good ultra-thin glass substrate of tempering is taken out rapidly, is stored after cooling, cleaning and drying spare；
Step 5：Plated successively on ultra-thin glass substrate using magnetron sputtering apparatus first electrode layer, photoelectric conversion layer and
The second electrode lay；
Step 6：The electrode slice with conducting resinl draws positive and negative anodes on pasting on the second electrode layer, to which solar energy core be made
Then piece is welded on the flat electrical wire of insulation on electrode slice；
Step 7：Skylight glass, solar chip and back-panel glass are stacked, the upper and lower surface of solar chip
It is bonded with adhesive layer, the air between skylight glass, solar chip, back-panel glass and adhesive layer is then first passed through into cold pumping
Mode extract out, then be positioned in high pressure valve and carry out conjunction piece, keep adhesive layer viscous with skylight glass, solar chip and back-panel glass
Knot one, finally passes through deburring, solar telephone skylight product is made.
Wherein, cold pumping requires cold pumping 20-60 minutes at a temperature of 18 ± 2 DEG C in the step 7.Ensure the air in interlayer
It is extracted the bubble clean, reduction generates during subsequently closing piece in interlayer.
Wherein, the temperature setting in the step 7 mesohigh kettle is 130 DEG C -150 DEG C, and pressure is set as 10bar-
15bar.Ensure that adhesive layer can be adequately by the bonding between skylight glass and solar chip, and remaining bubble is disappeared
It removes, keeps the color of solar energy skylight glass product formation more uniform.
The present invention has the advantages that due to taking above-mentioned technical proposal：
1, the present invention can ensure that laterally the deep and longitudinal maximum arc of maximum arc requires to be respectively less than the 20mm/m sun deeply in making
It can not be broken up during skylight glass product, while also effectively control conversion of the chemical tempering to ultra-thin glass substrate
The influence that efficiency declines ensures that the transformation efficiency of solar chip of the ultra-thin glass substrate after chemical tempering can also be kept
Original 80% or more.
2, solar energy skylight glass product made of the present invention can reach 8% or more transformation efficiency, while make skylight
Vitreous person's character can be kept, and manufacture craft is simple, it is easy to implement, it is beneficial to the big rule of solar telephone skylight product
Mould is promoted.
Description of the drawings：
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the structural schematic diagram of the solar chip of the present invention；
Fig. 3 is the production method flow chart of the solar energy skylight product of the present invention.
Label declaration：
10, skylight glass, 20, adhesive layer, 30, solar chip, 40, back-panel glass；
31, ultra-thin glass substrate, 32, first electrode layer, 33, photoelectric conversion layer, 34, the second electrode lay, 35, electrode slice；
331, a-Si layers, 332, c-Si layers of μ.
Specific implementation mode：
Below with reference to the specific implementation mode described in attached drawing, the present invention will be described in detail, but these embodiments are simultaneously
Do not limit the present invention, structure of the those skilled in the art made by these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
As depicted in figs. 1 and 2, solar telephone skylight product of the invention include skylight glass 10, solar chip 30,
Back-panel glass 40 and adhesive layer 20, it is the chemical tempering soda-lime glass of 640Mpa that back-panel glass 40, which selects surface stress value,；The sun
Energy chip 30 includes being located at ultra-thin glass by one layer of curve form and the same or similar ultra-thin glass substrate 31 of skylight glass and being served as a contrast
Bottom 31 is coated with towards the first electrode layer 32 that material is tin indium oxide (ITO) is coated in interior one side in first electrode layer 32 successively
The photoelectric conversion layer 33 of a-Si layers 331 (non-crystalline silicon) and μ c-Si layers 332 (microcrystal silicon) composition, is coated with material on photoelectric conversion layer 33
Material is similarly the second electrode lay 34 of tin indium oxide (ITO), and the electrode slice 35 that a pair of of copper is made is pasted on the second electrode lay 34；
The upper and lower surface of solar chip 30 is set to skylight glass 10 and back-panel glass by the adhesive layer 20 that thickness is 0.33mm
Between 40, the material that adhesive layer is selected is PVB, and the thickness of skylight glass 10 is 4mm, and the thickness of back-panel glass 40 is 1.1mm, day
Glass pane 10 and the deep and longitudinal maximum arc of the laterally maximum arc of back-panel glass 40 are 15mm/m, the thickness of ultra-thin glass substrate 31 deeply
Degree is 0.5mm, and ultra-thin glass substrate 31 is the soda-lime glass by chemical tempering, and the surface stress value of ultra-thin glass substrate 31 is
550Mpa。
As shown in figure 3, the production method of the solar telephone skylight product of the present invention, includes the following steps：
Step 1：The molding skylight glass 10 and the back of the body that the deep and longitudinal maximum arc of laterally maximum arc is 15mm/m deeply are provided
Glass sheet 40；
Step 2：The ultra-thin glass that thickness is 0.5mm is cut into the apparent size needed for skylight glass 10, as the sun
The ultra-thin glass substrate 31 of energy chip 30；
Step 3：Ultra-thin glass substrate 31 is put into the fused salt slot of the chemical raw material containing potassium nitrate, at 380~460 DEG C
Under the conditions of, carry out the ion-exchange treatment of 30~70min；
Step 4：The good ultra-thin glass substrate 31 of tempering is taken out rapidly, is stored after cooling, cleaning and drying spare；
Step 5：First electrode layer 32, opto-electronic conversion are plated successively on ultra-thin glass substrate 31 using magnetron sputtering apparatus
Layer 33 and the second electrode lay 34；
Step 6：The electrode slice 35 with conducting resinl draws positive and negative anodes on being pasted on the second electrode lay 34, and strikes off compacting,
To which solar chip 30 be made, then it is welded on electrode slice 35 with the flat electrical wire (not shown) of insulation；
Step 7：Skylight glass 10, solar chip 30 and back-panel glass 40 are stacked, in solar chip 30
Upper and lower surface place POE materials as adhesive layer 20, then by skylight glass 10, solar chip 30,40 and of back-panel glass
The mode for first passing through cold pumping of air between adhesive layer 20 is extracted out, then is positioned in autoclave and is carried out conjunction piece, make adhesive layer 20 with
Skylight glass 10, solar chip 30 and back-panel glass 40 bond one, finally pass through deburring, and the production of solar telephone skylight is made
Product.Specifically, it is 150 DEG C that cold pumping, which requires the cold pumping 30 minutes or so at a temperature of 18 ± 2 DEG C, the temperature setting in autoclave, pressure
Power is set as 15bar, constant temperature time 40 minutes, pressure release temperature≤45 DEG C.
Specific embodiment described herein is only an example for the spirit of the invention.Technology belonging to the present invention is led
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (10)
1. a kind of solar telephone skylight product, the solar energy skylight product includes skylight glass, solar chip, backboard glass
Glass and adhesive layer；The solar chip includes one layer of curve form ultra-thin glass substrate identical with skylight glass, is located at
First electrode layer on the ultra-thin glass substrate, is located at the photoelectricity at the photoelectric conversion layer in the first electrode layer
The second electrode lay on conversion layer and electrode slice；The upper and lower surface of the solar chip is set to the day by adhesive layer
Between glass pane and back-panel glass, which is characterized in that the deep and longitudinal maximum arc of laterally maximum arc of the skylight glass is deeply equal
Less than 20mm/m, the thickness of the ultra-thin glass substrate is 0.33~1mm, and the ultra-thin glass substrate is by chemical tempering
The surface stress value of soda-lime glass, the ultra-thin glass substrate is 400~600Mpa.
2. solar telephone skylight product according to claim 1, which is characterized in that the photoelectric conversion layer includes amorphous
It is one or more in silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film.
3. solar telephone skylight product according to claim 1, which is characterized in that the first electrode layer, the second electricity
The material of pole layer is one kind of zinc oxide, tin oxide or tin indium oxide.
4. solar telephone skylight according to claim 1, which is characterized in that the thickness of the adhesive layer be 0.33~
0.4mm。
5. solar telephone skylight product according to claim 1 or 4, which is characterized in that the material of the adhesive layer is
The ethylene-vinyl acetate copolymer EVA either polyvinyl butyral PVB or high polymer POE of ethylene and butylene.
6. solar telephone skylight product according to claim 1, which is characterized in that the back-panel glass is by chemistry
The soda-lime glass of tempering, or the aluminium silicon salt glass by chemical tempering.
7. solar telephone skylight product according to claim 6, which is characterized in that the surface stress of the back-panel glass
Value is more than 600Mpa.
8. a kind of production method of solar telephone skylight as described in any one of claim 1-7 comprising following steps：
Step 1：Molding skylight glass and backboard glass that the deep and longitudinal maximum arc of laterally maximum arc is respectively less than 20mm/m deeply are provided
Glass；
Step 2：The ultra-thin glass that thickness is 0.33~1mm is cut into the apparent size needed for skylight glass, as solar energy
The ultra-thin glass substrate of chip；
Step 3：Ultra-thin glass substrate is put into the fused salt slot of the chemical raw material containing potassium nitrate, in 380~460 DEG C of conditions
Under, carry out the ion-exchange treatment of 30~70min；
Step 4：The good ultra-thin glass substrate of tempering is taken out rapidly, is stored after cooling, cleaning and drying spare；
Step 5：Plate first electrode layer, photoelectric conversion layer and second successively on ultra-thin glass substrate using magnetron sputtering apparatus
Electrode layer；
Step 6：The electrode slice with conducting resinl draws positive and negative anodes on pasting on the second electrode layer, to which solar chip be made,
Then it is welded on electrode slice with the flat electrical wire of insulation；
Step 7：Skylight glass, solar chip and back-panel glass are stacked, it is equal in the upper and lower surface of solar chip
It is bonded with adhesive layer, air between skylight glass, solar chip, back-panel glass and adhesive layer is then first passed through into cold smoke
Mode is extracted out, then is positioned in high pressure valve and is carried out conjunction piece, and adhesive layer is made to be bonded with skylight glass, solar chip and back-panel glass
One finally passes through deburring, solar telephone skylight product is made.
9. the production method of solar telephone skylight according to claim 8, which is characterized in that cold pumping in the step 7
It is required that cold pumping 20-60 minutes at a temperature of 18 ± 2 DEG C.
10. the production method of solar telephone skylight according to claim 8, which is characterized in that step 7 mesohigh
Temperature setting in kettle is 130 DEG C -150 DEG C, and pressure is set as 10bar-15bar.
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| CN201810178707.XA CN108417653A (en) | 2018-03-05 | 2018-03-05 | A kind of solar telephone skylight product and production method |
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| CN201810178707.XA CN108417653A (en) | 2018-03-05 | 2018-03-05 | A kind of solar telephone skylight product and production method |
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| CN109799634A (en) * | 2019-01-10 | 2019-05-24 | 福耀玻璃工业集团股份有限公司 | A kind of tunable optical starry sky decoration atmosphere lamp skylight glass |
| CN110588306A (en) * | 2019-09-03 | 2019-12-20 | 芜湖莫森泰克汽车科技股份有限公司 | Solar skylight glass |
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