CN101924152A - Thin-film solar cell and manufacture method thereof - Google Patents
Thin-film solar cell and manufacture method thereof Download PDFInfo
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- CN101924152A CN101924152A CN201010115617XA CN201010115617A CN101924152A CN 101924152 A CN101924152 A CN 101924152A CN 201010115617X A CN201010115617X A CN 201010115617XA CN 201010115617 A CN201010115617 A CN 201010115617A CN 101924152 A CN101924152 A CN 101924152A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a thin-film solar cell and a manufacture method thereof. By adopting the technical scheme, the photoelectric conversion rate of the thin-film solar cell can be improved. The thin-film solar cell comprises backboard glass, a back electrode, a sealing layer and a metal reflecting layer, wherein the sealing layer is arranged between the backboard glass and the back electrode, and the metal reflecting layer which is arranged between the backboard glass and the sealing layer. The manufacture method comprises the following steps of: generating a TCO (Transparent Conductive Oxide) layer, an absorption layer and a back electrode on foreplate glass; and arranging the sealing layer between the back electrode and the backboard glass after finishing the laser engraving of the back electrode and the absorption layer, and generating the metal reflecting layer on the surface of the sealing layer close to the backboard glass. The metal reflecting layer between the sealing layer and the backboard glass in the thin-film solar cell can reflect rays passing through a laser engraving area back to the absorption layer so as to improve the photoelectric conversion rate.
Description
Technical field
The present invention relates to technical field of solar batteries, relate in particular to a kind of thin-film solar cells and preparation method thereof.
Background technology
Along with worldwide nervous and short of the energy, people improve day by day to the attention degree that taps a new source of energy, and especially pay attention to day by day with the development and utilization of the green energy resource headed by the solar energy.Solar energy is subjected to extensive concern and favor with special advantages such as its pollution-free, no region restriction and round-the-clock utilization.Market increases day by day to large tracts of land more, the more frivolous and demand novel solar battery that production cost is lower.In these novel solar batteries, the exploitation of thin-film solar cells has been subjected to worldwide extensive concern, becomes the new trend and the new focus of solar cell development.
Fig. 1 is the traditional manufacturing technique of thin-film solar cells, as shown in Figure 1, the technological process that relates generally to comprises: the cleaning of TCO (transparent conductive oxide) glass, Laser1# laser scoring, cleaning and thin layer deposition, Laser2# laser scoring, back electrode deposition, Laser3# laser scoring, cleaning and electrode wires are welded, sealant is made, connect terminal box carries out electric performance test.Wherein, sealant generally adopts PVB (Polyvinyl Butyral, polyvinyl butyral resin) or EVA (Ethylene Vinyl Acetate, ethylene-vinyl acetate copolymer) doubling, the main purpose of Laser3# laser scoring is with silicon layer and back electrode line.The thin-film solar cells of making by technological process shown in Figure 1 mainly comprises: back-panel glass 1, sealant 2, back electrode 3, absorbed layer 4, tco layer 5 and preceding glass sheet 6 as shown in Figure 2.
In thin film solar structure as shown in Figure 2, because the Laser3# laser scoring is all carved the metallic reflector of back electrode 3 and the thin layer of absorbed layer 4 fall, formed laser scribing zone 7 as shown in Figure 3, shown in arrow among Fig. 3, after light is by preceding glass sheet 6 and tco layer 5, the most of light that enters laser scribing zone 7 enters sealant 2 and back-panel glass 1, PVB or EVA that general sealant 2 uses are transparent materials, and back-panel glass also is transparent, therefore light is directly missed by sealant 2 and back-panel glass 1, generally speaking, laser scribing zone 7 accounts for cell panel area 0.7%, feasible luminous energy by this part can't be utilized, and photoelectric conversion rate is low.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of thin-film solar cells and preparation method thereof, adopts this technical scheme, can improve the photoelectric conversion rate of thin-film solar cells.
The embodiment of the invention is achieved through the following technical solutions:
An aspect according to the embodiment of the invention provides a kind of thin-film solar cells.
According to the thin-film solar cells that the embodiment of the invention provides, comprise the sealant between back-panel glass and back electrode, also comprise the metallic reflector that is arranged between described back-panel glass and the described sealant.
Preferably, being arranged on the material that the metallic reflector between described back-panel glass and the described sealant adopts comprises:
Silver Ag, aluminium Al or copper Cu material; Or
The composite of making by at least two kinds of metal materials.
Preferably, be arranged on the thickness of the metallic reflector between described back-panel glass and the described sealant more than or equal to 20 nanometers and smaller or equal to 500 nanometers.
Preferably, the material of described metallic reflector employing comprises:
In described thin-film solar cells absorbed the wave-length coverage of light correspondence, the metal material of reflectivity maximum or reflectivity were greater than a kind of or at least two kinds of composites made in the metal material of setting threshold.
Preferably, the face that described metallic reflector and sealant are adjacent adopts suede structure.
According to another aspect of the embodiment of the invention, also provide a kind of manufacture method of thin-film solar cells.
The manufacture method of the thin-film solar cells that provides according to the embodiment of the invention comprises:
At header board generation transparent conductive oxide on glass tco layer, absorbed layer and back electrode;
Behind the laser scoring of finishing described back electrode and absorbed layer, between described back electrode and back-panel glass, place sealant, and generate metallic reflector on the surface that described sealant closes on described back-panel glass or generate metallic reflector on the surface that described back-panel glass is closed on described sealant.
Preferably, the surface of closing on described back-panel glass at described sealant generates metallic reflector, comprising:
Adopt sputter, deposition or spraying method to generate metallic reflector on the surface that described sealant closes on described back-panel glass.
Preferably, the material that the metallic reflector that generates between described back electrode and back-panel glass adopts comprises:
Silver Ag, aluminium Al or copper Cu material; Or
The composite of making by at least two kinds of metal materials.
Preferably, the material of described metallic reflector employing comprises:
In described thin-film solar cells absorbed the wave-length coverage of light correspondence, the metal material of reflectivity maximum or reflectivity were greater than a kind of or at least two kinds of composites made in the metal material of setting threshold.
According to another aspect of the embodiment of the invention, also provide a kind of manufacture method of thin-film solar cells.
The manufacture method of the thin-film solar cells that provides according to the embodiment of the invention comprises:
At header board transparent conductive oxide tco layer, absorbed layer and the back electrode of generating successively on glass;
Behind the laser scoring of finishing described back electrode and absorbed layer, place sealant between described back electrode and back-panel glass, the surface that described sealant closes on described back-panel glass generates metallic reflector or described back-panel glass in advance and closes on the surface of described sealant and generated metallic reflector in advance.
Above-mentioned at least one technical scheme that provides by the embodiment of the invention, thin-film solar cells comprises the sealant between back-panel glass and back electrode, also comprise the metallic reflector that is arranged between this back-panel glass and the sealant, promptly when making this thin-film solar cells, behind the laser scoring of finishing back electrode and absorbed layer, between this back electrode and back-panel glass, place sealant successively, and generate metallic reflector or directly use on the surface that the sealing layer closes on back-panel glass and generate the sealant that metallic reflector is arranged in advance, because metallic reflector can reflection ray, therefore after light sees through the laser scribing zone, can directly not miss by back-panel glass, but be arranged on metallic reflector reflected back absorbed layer between sealing layer and this back-panel glass, thereby improved photoelectric conversion rate by this.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in the specification of being write, claims and accompanying drawing.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used from explanation the present invention with the embodiment of the invention one, is not construed as limiting the invention.In the accompanying drawings:
The traditional manufacturing technique flow chart of the thin-film solar cells that provides in the background technology of the present invention is provided Fig. 1;
The film solar battery structure schematic diagram of Fig. 2 for providing in the background technology of the present invention;
The thin-film solar cells light leak schematic diagram of Fig. 3 for providing in the background technology of the present invention;
The film solar battery structure figure one of Fig. 4 for providing in the embodiment of the invention;
The thin-film solar cells light reflection schematic diagram one of Fig. 5 for providing in the embodiment of the invention;
The film solar battery structure figure two of Fig. 6 for providing in the embodiment of the invention;
The thin-film solar cells light reflection schematic diagram two of Fig. 7 for providing in the embodiment of the invention;
The making flow chart of the thin-film solar cells that provides in the embodiment of the invention is provided Fig. 8.
Embodiment
In order to provide the implementation of the photoelectric conversion rate that improves thin-film solar cells, the embodiment of the invention provides a kind of thin-film solar cells and preparation method thereof, below in conjunction with Figure of description the preferred embodiments of the present invention are described, be to be understood that, preferred embodiment described herein only is used for description and interpretation the present invention, and is not used in qualification the present invention.And under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.
According to one embodiment of the invention, a kind of thin-film solar cells is provided, as shown in Figure 4, this thin-film solar cells comprises:
Back-panel glass 401, metallic reflector 402, sealant 403, back electrode 404, absorbed layer 405, tco layer 406 and preceding glass sheet 407;
Wherein, metallic reflector 402 is between back-panel glass 401 and sealant 403.
In the preferred embodiment of the present invention, this metallic reflector 402 can adopt the material of high reflectances such as silver-colored Ag, aluminium Al or copper Cu.Wherein, the reflectivity of Ag generally can reach about 99%, and the reflectivity of Al generally can reach about 97%, but that Ag gets cost is higher.Be to be understood that, the metal material that listed herein metallic reflector 403 can adopt only is preferred metal material, also can select other metal material according to the embodiment of the invention, therefore, can consider cost and the concrete material of selecting metallic reflector to adopt in conjunction with the reflectivity that various metal materials can reach in the practical application.
In the preferred embodiment of the present invention, metallic reflector 402 can also adopt the composite of being made by at least two kinds of metal materials, for example adopts Ag/Si (silicon) composite membrane, Ag/TiO
2(titanium oxide) composite membrane, Ag/SiO
2(silica) composite membrane etc.
In the preferred embodiment of the present invention, the thickness of this metallic reflector 402 generally can be chosen 120 nanometers more than or equal to 20 nanometers and smaller or equal to 500 nanometers.Be to be understood that, the thickness range of listed herein metallic reflector 402 only is preferred thickness range, also can select this scope thickness in addition according to the embodiment of the invention, for example, in the practical application, can adjust the thickness of metallic reflector according to factors such as the reflectivity of the metal material of selecting and costs, the thick more reflectivity that can arrive of general thickness is high more, and the cost that needs is also high more certainly.
It is definite that the material that metallic reflector 402 adopts also can absorb the wave-length coverage of light correspondence according to thin-film solar cells.Because of different metal has different reflectivity to the light of different wavelength range, for example, to ultraviolet region, the reflectivity of metal A l is higher; To visible region, the reflectivity of metal A l or Ag is higher; To near-infrared region, the reflectivity of metal A g or Cu is higher.Therefore, in the preferred embodiment of the present invention, in thin-film solar cells absorbs the wave-length coverage of light correspondence, can adopt the material of the metal material of reflectivity maximum, also can adopt reflectivity greater than a kind of in the metal material of setting threshold or at least two kinds of composites of making material as metal level as metallic reflector.For example, for the amorphous silicon thin-film solar cell of unijunction structure, it is 300-900nm (mainly being visible region) that the sunlight that this thin-film solar cells absorbed concentrates on wavelength, so this metallic reflector 402 can use metal A l material; For the amorphous silicon of double junction structure and the laminated cell of microcrystal silicon, it is 300-1100nm (containing visible region and near-infrared region) that the sunlight that is absorbed concentrates on wavelength, so this metallic reflector 402 can adopt Ag as metallic reflective coating.Concrete condition can be looked the structure that thin-film solar cells adopts and be selected the material of metallic reflector flexibly, enumerates no longer one by one herein.
In the thin-film solar cells that the technical scheme that provides according to the above embodiment of the present invention generates, after light is by preceding glass sheet 407 and tco layer 406, enter the laser scribing zone that the Laser3# laser scoring forms, these concrete 408 parts as shown in Figure 5 in laser scribing zone, as shown in Figure 5, light from light source enters laser scribing zone 408 by preceding glass sheet 407 and tco layer 406, the light that sees through sealant 403 is by metallic reflector 402 reflected back absorbed layers 405, light reflection schematic diagram is specifically shown in dotted arrow among Fig. 5, as seen, thin-film solar cells according to the embodiment of the invention provides has improved photoelectric conversion rate.
Another embodiment according to the present invention provides a kind of thin-film solar cells, and as shown in Figure 6, this thin-film solar cells comprises:
Back-panel glass 601, metallic reflector 602, sealant 603, back electrode 604, absorbed layer 605, tco layer 606 and preceding glass sheet 607;
Wherein, metallic reflector 602 is between back-panel glass 601 and sealant 603, and this metallic reflector 602 and sealant 603 adjacent faces adopt suede structure.
In the thin-film solar cells that the technical scheme that provides according to the above embodiment of the present invention generates, after light is by preceding glass sheet 607 and tco layer 606, enter the laser scribing zone that the Laser3# laser scoring forms, these concrete 608 parts as shown in Figure 7 in laser scribing zone, as shown in Figure 7, light from light source enters laser scribing zone 608 by preceding glass sheet 607 and tco layer 606, the light that sees through sealant 603 is by metallic reflector 602 reflected back absorbed layers 605, light reflection schematic diagram is specifically shown in dotted arrow among Fig. 7, because this metallic reflector 602 adopts suede structure, therefore, improve the reflectivity of light, and then further improved photoelectric conversion rate.
Correspondingly, the embodiment of the invention also provides the method for making above-mentioned thin-film solar cells, and as shown in Figure 8, this method comprises the steps:
Step 801, at header board transparent conductive oxide tco layer, absorbed layer and the back electrode of generating successively on glass.
Step 802, back electrode and absorbed layer are carried out laser scoring.
Step 803, after back electrode and absorbed layer are carried out laser scoring, between back electrode and back-panel glass, place sealant, and generate metallic reflector on the surface that the sealing layer closes on back-panel glass or generate metallic reflector on the surface that back-panel glass is closed on sealant.
Wherein, in the step 803, at first place sealant, generate metallic reflector then on the back electrode top layer.And the metallic reflector between sealing layer and back-panel glass can preferably adopt the material of high reflectances such as silver-colored Ag, aluminium Al or copper Cu; Perhaps adopt the composite of making by at least two kinds of metal materials, for example, Ag/Si (silicon) composite membrane, Ag/TiO
2(titanium oxide) composite membrane, Ag/SiO
2(silica) composite membrane etc.
Further, in the above-mentioned steps 803, the thickness of the metallic reflector that generates can be more than or equal to 20 nanometers and smaller or equal to 500 nanometers, preferably, can generate the metallic reflector of 120 nano thickness, as previously mentioned, in the practical application, the thickness of this metallic reflector can be adjusted according to actual needs.
More specifically, the metallic reflector of generation can be determined according to the wave-length coverage that thin-film solar cells absorbs the light correspondence.Because of different metal has different reflectivity to the light of different wavelength range, for example, to ultraviolet region, the reflectivity of metal A l is higher; To visible region, the reflectivity of metal A l or Ag is higher; To near-infrared region, the reflectivity of metal A g or Cu is higher, based on this, in the preferred embodiment of the present invention, in thin-film solar cells absorbs the wave-length coverage of light correspondence, can adopt the material of the metal material of reflectivity maximum, also can adopt reflectivity greater than a kind of in the metal material of setting threshold or at least two kinds of composites of making material as metal level as metallic reflector.For example, for the amorphous silicon thin-film solar cell of unijunction structure, it is 300-900nm (being mainly visible region) that the sunlight that this thin-film solar cells absorbed concentrates on wavelength, therefore, can use metal A l as metallic reflective coating; For the amorphous silicon of double junction structure and the laminated cell of microcrystal silicon, the wavelength that concentrates on of the sunlight that is absorbed is 300-1100nm (comprising visible region and near-infrared region), therefore, can use a kind of or at least two kinds of composites of making among Al, Ag, the Cu as metallic reflector.Concrete condition can be looked the structure that thin-film solar cells adopts and be selected the material of metallic reflector flexibly, enumerates no longer one by one herein.
In the preferred embodiment of the present invention, generate metallic reflector, comprising:
Adopt sputter, deposition or spraying method to generate metallic reflector.
More specifically, also can pass through PVD technology, on sealant or back-panel glass, be coated with metallic reflector in advance, promptly in order to improve the production efficiency of thin-film solar cells, can metallic reflector be created on sealant or the back-panel glass in advance, in the process of making thin-film solar cells, above-mentioned steps 803 can directly use this generation that the sealant of metallic reflector is arranged, and the sealing layer generates has the surface of metallic reflector adjacent with back-panel glass, or, can directly use this generation that the back-panel glass of metallic reflector is arranged, and this back-panel glass generate and has the surface of metallic reflector adjacent with sealant.
Above-mentioned at least one technical scheme that provides by the embodiment of the invention, thin-film solar cells comprises the sealant between back-panel glass and back electrode, also comprise the metallic reflector that is arranged between this back-panel glass and the sealant, promptly when making this thin-film solar cells, after absorbed layer and back electrode carried out laser scoring, between this back electrode and back-panel glass, generate sealant and metallic reflector successively, because metallic reflector can reflection ray, therefore after light sees through the laser scribing zone, can directly not miss by back-panel glass, but be arranged on metallic reflector reflected back absorbed layer between sealing layer and this back-panel glass, thereby improved photoelectric conversion rate by this.
According to the technical scheme that the embodiment of the invention is passed through, the face that metallic reflector and sealant are adjacent adopts suede structure, has further improved the reflectivity of light by this suede structure, and then has improved photoelectric conversion rate.
The technical scheme of passing through according to the embodiment of the invention, metal reflective layer wherein can adopt the high silver-colored Ag of reflectivity, aluminium Al or copper Cu material, and thickness is more than or equal to 20 nanometers and smaller or equal to 500 nanometers, in the practical application, the thickness of metallic reflector is thick more, and albedo is strong more, but the corresponding raising of cost meeting, therefore, can consider that the reflectivity that will reach and production cost adjust the thickness of metallic reflector.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. a thin-film solar cells is characterized in that, comprises back-panel glass and back electrode, and the sealant between described back-panel glass and back electrode, also comprises the metallic reflector that is arranged between described back-panel glass and the described sealant.
2. thin-film solar cells as claimed in claim 1 is characterized in that, the material that described metallic reflector adopts comprises:
Silver Ag, aluminium Al or copper Cu material; Or
The composite of making by at least two kinds of metal materials.
3. thin-film solar cells as claimed in claim 1 is characterized in that, the thickness of described metallic reflector is more than or equal to 20 nanometers and smaller or equal to 500 nanometers.
4. thin-film solar cells as claimed in claim 1 is characterized in that, the material that described metallic reflector adopts comprises:
In described thin-film solar cells absorbed the wave-length coverage of light correspondence, the metal material of reflectivity maximum or reflectivity were greater than a kind of or at least two kinds of composites made in the metal material of setting threshold.
5. as each described thin-film solar cells of claim 1 to 4, it is characterized in that the face that described metallic reflector and sealant are adjacent adopts suede structure.
6. the manufacture method of a thin-film solar cells is characterized in that, comprising:
At header board transparent conductive oxide tco layer, absorbed layer and the back electrode of generating successively on glass;
Behind the laser scoring of finishing described back electrode and absorbed layer, between described back electrode and back-panel glass, place sealant, and generate metallic reflector on the surface that described sealant closes on described back-panel glass or generate metallic reflector on the surface that described back-panel glass is closed on described sealant.
7. method as claimed in claim 6 is characterized in that, generates described metallic reflector, comprising:
Adopt sputter, deposition or spraying method to generate described metallic reflector.
8. method as claimed in claim 6 is characterized in that, the material that described metallic reflector adopts comprises:
Silver Ag, aluminium Al or copper Cu material; Or
The composite of making by at least two kinds of metal materials.
9. method as claimed in claim 6 is characterized in that, the material that described metallic reflector adopts comprises:
In described thin-film solar cells absorbed the wave-length coverage of light correspondence, the metal material of reflectivity maximum or reflectivity were greater than a kind of or at least two kinds of composites made in the metal material of setting threshold.
10. the manufacture method of a thin-film solar cells is characterized in that, comprising:
At header board transparent conductive oxide tco layer, absorbed layer and the back electrode of generating successively on glass;
Behind the laser scoring of finishing described back electrode and absorbed layer, place sealant between described back electrode and back-panel glass, the surface that described sealant closes on described back-panel glass generates metallic reflector or described back-panel glass in advance and closes on the surface of described sealant and generated metallic reflector in advance.
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| CN201010115617XA CN101924152A (en) | 2010-03-02 | 2010-03-02 | Thin-film solar cell and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010115617XA CN101924152A (en) | 2010-03-02 | 2010-03-02 | Thin-film solar cell and manufacture method thereof |
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| CN101924152A true CN101924152A (en) | 2010-12-22 |
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| CN201010115617XA Pending CN101924152A (en) | 2010-03-02 | 2010-03-02 | Thin-film solar cell and manufacture method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117856A (en) * | 2010-12-28 | 2011-07-06 | 钱惠富 | Amorphous silicon thin film solar cell |
| CN102306671A (en) * | 2011-09-30 | 2012-01-04 | 深圳华加日铝业有限公司 | Integrated solar thin film battery component, backboard and modification method thereof |
| CN103199124A (en) * | 2012-01-04 | 2013-07-10 | 杜邦太阳能有限公司 | Solar cell |
| CN103367493A (en) * | 2012-04-01 | 2013-10-23 | 陈志正 | Photovoltaic assembly |
| CN112309270A (en) * | 2020-10-23 | 2021-02-02 | Tcl华星光电技术有限公司 | Display module and preparation method thereof |
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| CN101246930A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Ultra-white reflection layer of thin-film solar cell |
| US20080223436A1 (en) * | 2007-03-15 | 2008-09-18 | Guardian Industries Corp. | Back reflector for use in photovoltaic device |
| US20080264483A1 (en) * | 2007-04-26 | 2008-10-30 | Keshner Marvin S | Amorphous silicon photovoltaic cells having improved light trapping and electricity-generating method |
| US20080308156A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
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| CN101246930A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Ultra-white reflection layer of thin-film solar cell |
| US20080223436A1 (en) * | 2007-03-15 | 2008-09-18 | Guardian Industries Corp. | Back reflector for use in photovoltaic device |
| US20080264483A1 (en) * | 2007-04-26 | 2008-10-30 | Keshner Marvin S | Amorphous silicon photovoltaic cells having improved light trapping and electricity-generating method |
| US20080308156A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117856A (en) * | 2010-12-28 | 2011-07-06 | 钱惠富 | Amorphous silicon thin film solar cell |
| CN102306671A (en) * | 2011-09-30 | 2012-01-04 | 深圳华加日铝业有限公司 | Integrated solar thin film battery component, backboard and modification method thereof |
| CN103199124A (en) * | 2012-01-04 | 2013-07-10 | 杜邦太阳能有限公司 | Solar cell |
| CN103367493A (en) * | 2012-04-01 | 2013-10-23 | 陈志正 | Photovoltaic assembly |
| CN112309270A (en) * | 2020-10-23 | 2021-02-02 | Tcl华星光电技术有限公司 | Display module and preparation method thereof |
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Application publication date: 20101222 |