TW201444015A - Method of peeling substrate and substrate peeling device - Google Patents
Method of peeling substrate and substrate peeling device Download PDFInfo
- Publication number
- TW201444015A TW201444015A TW102136637A TW102136637A TW201444015A TW 201444015 A TW201444015 A TW 201444015A TW 102136637 A TW102136637 A TW 102136637A TW 102136637 A TW102136637 A TW 102136637A TW 201444015 A TW201444015 A TW 201444015A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- laser
- distance
- substrate assembly
- distance measuring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本發明係有關於一種基板剝離方法以及基板剝離裝置,更詳細而言,係有關於一種利用雷射的基板剝離方法以及基板剝離裝置。The present invention relates to a substrate peeling method and a substrate peeling device, and more particularly to a substrate peeling method using a laser and a substrate peeling device.
在製造軟性顯示裝置時,為了方便製造,可以製造在軟性相對低的載體基板上形成軟性顯示裝置的構造物。載體基板支撐軟性顯示裝置的構造物,從而可以使軟性顯示裝置的製造工程變容易。在軟性顯示裝置的製造工程中,載體基板從軟性顯示裝置的構造物分離,為分離載體基板和軟性顯示裝置的構造物,而可以使用基板剝離裝置。When manufacturing a flexible display device, a structure for forming a flexible display device on a carrier substrate having a relatively low softness can be manufactured for the convenience of manufacturing. The carrier substrate supports the structure of the flexible display device, so that the manufacturing process of the flexible display device can be facilitated. In the manufacturing process of the flexible display device, the carrier substrate is separated from the structure of the flexible display device, and the substrate peeling device can be used as the structure for separating the carrier substrate and the flexible display device.
基板剝離裝置用於分離包含在基板結合體的互相結合的基板,或從基板去除結合在基板的薄膜。為了剝離基板,基板剝離裝置可以使用雷射。向基板照射基板,從而可使基板彼此間或基板和剝離物件的層間的結合力減弱。The substrate peeling device is for separating the substrates bonded to each other in the substrate combination or removing the film bonded to the substrate from the substrate. In order to peel off the substrate, the substrate peeling device can use a laser. The substrate is irradiated to the substrate so that the bonding force between the substrates or between the layers of the substrate and the peeled article can be weakened.
雷射的幅度比相互結合的基板的幅度小時,透過一次雷射掃描無法照射互相結合的基板的所有區域。此時,為了分離互相結合的基板,雷射掃描可以進行數次。僅在基板結合體的局部區域進行雷射掃描時,可以分離經雷射掃描的區域的基板,而不能分離未經雷射掃描的區域的基板。基板結合體包括軟性基板時,因僅在局部區域與其他基板分離的軟性基板,基板的外形會發生變化,因此,基板結合體的配置會改變。隨著改變基板結合體的配置,基板結合體內雷射焦點所處的區域會改變,因此,不能順利地分離基板。The amplitude of the laser is smaller than the amplitude of the substrates bonded to each other, and it is impossible to illuminate all areas of the bonded substrates by one laser scanning. At this time, in order to separate the substrates bonded to each other, the laser scanning can be performed several times. When laser scanning is performed only in a partial region of the substrate assembly, the substrate of the laser-scanned region can be separated, and the substrate of the region not subjected to the laser scanning cannot be separated. When the substrate assembly includes a flexible substrate, the outer shape of the substrate changes due to the soft substrate separated from the other substrate only in a partial region. Therefore, the arrangement of the substrate assembly changes. As the configuration of the substrate assembly is changed, the area where the laser is focused in the substrate in combination with the substrate changes, and therefore, the substrate cannot be smoothly separated.
本發明所要解決的課題是,提供一種透過改變在基板結合體內雷射焦點所處的區域,從而能順利地分離基板的基板剝離方法。An object of the present invention is to provide a substrate peeling method capable of smoothly separating a substrate by changing a region where a laser focus is in a substrate bond.
本發明所要解決的其他課題是,提供一種透過改變在基板結合體內雷射焦點所處的區域,從而能順利地分離基板的基板剝離裝置。Another object to be solved by the present invention is to provide a substrate peeling apparatus capable of smoothly separating a substrate by changing a region where a laser focus is in a substrate bonded body.
本發明的課題並不局限於以上所述的技術課題,對於未提及的其他技術課題,本領域的技術人員可透過以下記載將會明確地理解。The subject matter of the present invention is not limited to the above-described technical problems, and those skilled in the art will clearly understand the other technical problems that are not mentioned.
為解決所述問題,根據本發明的一實施例的基板剝離方法,包括:形成基板結合體的步驟,基板結合體包括第一基板以及與第一基板結合的軟性第二基板,區分為第一區域及第二區域;將基板結合體安裝在工作臺上的步驟;向第一區域照射雷射的第一雷射掃描步驟;測定配置在基板結合體上的距離測定部和基板結合體之間的距離的步驟;對應距離測定部和基板結合體之間的距離改變雷射的焦點位置的步驟;以及向第二區域照射雷射的第二雷射掃描步驟。In order to solve the problem, a substrate peeling method according to an embodiment of the present invention includes: a step of forming a substrate assembly, the substrate assembly including a first substrate and a flexible second substrate bonded to the first substrate, the first being divided into a region and a second region; a step of mounting the substrate assembly on the table; a first laser scanning step of irradiating the first region with a laser; and measuring a distance between the distance measuring portion and the substrate assembly disposed on the substrate assembly a step of distance; a step of changing a focus position of the laser corresponding to a distance between the distance measuring portion and the substrate combination; and a second laser scanning step of irradiating the second region with a laser.
為解決所述問題,根據本發明的其他實施例的基板剝離裝置,包括:雷射輸出部,向包含第一基板及結合於第一基板的軟性第二基板的基板結合體照射雷射;工作臺,在上部安裝基板結合體;距離測定部,配置在基板結合體上,用於測定與基板結合體的距離;以及控制部,對應距離測定部和基板結合體之間的距離改變雷射的焦點位置。In order to solve the above problems, a substrate stripping apparatus according to another embodiment of the present invention includes: a laser output portion that irradiates a laser to a substrate assembly including a first substrate and a flexible second substrate bonded to the first substrate; The substrate is mounted on the upper portion; the distance measuring unit is disposed on the substrate assembly for measuring the distance from the substrate assembly; and the control unit changes the distance between the distance measuring unit and the substrate assembly to change the laser. Focus position.
其他實施例的具體事項包含於詳細說明及圖面。Specific matters of other embodiments are included in the detailed description and drawings.
根據本發明的實施例至少具有以下效果。Embodiments according to the present invention have at least the following effects.
即,透過容易改變雷射焦點在基板結合體內的區域,從而可以順利地剝離基板。That is, the substrate can be smoothly peeled off by easily changing the area of the laser focus in the substrate assembly.
並且,透過容易改變雷射焦點在基板結合體內的區域,從而可以減少在剝離基板時產生的基板損傷。Further, by easily changing the area of the laser focus in the substrate assembly, it is possible to reduce the damage of the substrate which occurs when the substrate is peeled off.
本發明的效果不局限於以上的內容,本發明包含更多樣的效果。The effects of the present invention are not limited to the above, and the present invention encompasses a wide variety of effects.
S10~S80...步驟S10~S80. . . step
10...基板結合體10. . . Substrate combination
11...第一基板11. . . First substrate
12...第二基板12. . . Second substrate
12a...主基板12a. . . Main substrate
12b...輔助層12b. . . Auxiliary layer
13...黏接層13. . . Adhesive layer
13a...第一黏接層13a. . . First adhesive layer
13b...第二黏接層13b. . . Second bonding layer
20...基板剝離裝置20. . . Substrate stripping device
21...工作臺twenty one. . . Workbench
22...雷射輸出部twenty two. . . Laser output
23...距離測定部twenty three. . . Distance measurement department
23a...第一距離測定部23a. . . First distance measuring unit
23b...第二距離測定部23b. . . Second distance measuring unit
24...控制部twenty four. . . Control department
R1...第一區域R1. . . First area
R2...第二區域R2. . . Second area
dL...幅度dL. . . Amplitude
dS...幅度dS. . . Amplitude
TL...試驗光TL. . . Test light
da...距離Da. . . distance
db...距離Db. . . distance
L1...第一雷射L1. . . First laser
f1...第一焦點F1. . . First focus
da`...距離Da`. . . distance
db`...距離Db`. . . distance
f2...第二焦點F2. . . Second focus
L2...第二雷射L2. . . Second laser
R2C...中央R2C. . . central
第1圖是顯示根據本發明的一實施例的基板剝離方法的流程圖。Fig. 1 is a flow chart showing a substrate peeling method according to an embodiment of the present invention.
第2圖是根據本發明的一實施例的基板結合體的截面圖。Fig. 2 is a cross-sectional view showing a substrate assembly according to an embodiment of the present invention.
第3圖是根據本發明的一實施例的基板結合體的俯視圖。Fig. 3 is a plan view of a substrate assembly in accordance with an embodiment of the present invention.
第4圖是顯示將根據本發明的一實施例的基板結合體安裝在工作臺上的步驟的圖。Fig. 4 is a view showing a step of mounting a substrate assembly according to an embodiment of the present invention on a workbench.
第5圖是根據本發明的一實施例的基板剝離裝置的方塊圖。Fig. 5 is a block diagram of a substrate peeling apparatus according to an embodiment of the present invention.
第6圖是顯示在根據本發明的一實施例的基板剝離裝置配置基板結合體的立體圖。Fig. 6 is a perspective view showing a substrate assembly in which a substrate peeling device is disposed according to an embodiment of the present invention.
第7圖是顯示測定根據本發明的一實施例的距離測定部和基板結合體之間的距離的步驟的圖。Fig. 7 is a view showing a step of measuring the distance between the distance measuring unit and the substrate assembly according to an embodiment of the present invention.
第8圖及第9圖是顯示根據本發明的一實施例的第一雷射掃描步驟的圖。8 and 9 are diagrams showing a first laser scanning step in accordance with an embodiment of the present invention.
第10圖是顯示第一雷射掃描後的基板結合體的圖。Fig. 10 is a view showing a substrate assembly after the first laser scanning.
第11圖是顯示根據本發明的一實施例的第一雷射掃描後測定距離測定部和基板結合體之間的距離的步驟的圖。Figure 11 is a view showing a step of measuring the distance between the distance measuring portion and the substrate assembly after the first laser scanning according to an embodiment of the present invention.
第12圖是顯示根據本發明的一實施例的調整雷射的焦點位置的步驟的圖。Figure 12 is a diagram showing the steps of adjusting the focus position of a laser according to an embodiment of the present invention.
第13圖及第14圖是顯示根據本發明的一實施例的第二雷射掃描步驟的圖。Figures 13 and 14 are diagrams showing a second laser scanning step in accordance with an embodiment of the present invention.
第15圖是顯示第二雷射掃描後的基板結合體的圖。Fig. 15 is a view showing the substrate assembly after the second laser scanning.
第16圖是顯示根據本發明的其他實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟的圖。Figure 16 is a diagram showing the steps of adjusting the focus position of the laser and the second laser scanning step according to other embodiments of the present invention.
第17圖是顯示根據本發明的其他又另一實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟的圖。Fig. 17 is a view showing a step of adjusting a focus position of a laser and a second laser scanning step according to still another embodiment of the present invention.
第18圖是顯示根據本發明的其他又另一實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟的圖。Figure 18 is a diagram showing the steps of adjusting the focus position of the laser and the second laser scanning step according to still another embodiment of the present invention.
本發明的優點、特徵以及其方法,透過附圖及後述的實施例將會更加明確。但是,本發明並不限定於以下實施例,可體現為各種不同的形態,本實施例是為使本發明的內容更加完整,並對本發明所屬領域的技術人員提供發明的範疇而提供的,本發明透過申請專利範圍所定義。Advantages, features, and methods of the present invention will become more apparent from the accompanying drawings and embodiments. However, the present invention is not limited to the following embodiments, and can be embodied in various different forms. This embodiment is provided to make the content of the present invention more complete and to provide the scope of the invention to those skilled in the art to which the invention belongs. The invention is defined by the scope of the patent application.
元件(elements)或層指稱其他元件或層的“上(on)”包括在其他元件的上面或中間設置其他層或其他元件的情況。整個說明書中對相同的構成元件標注相同的符號。An element or layer refers to the "on" of another element or layer including the case where other layers or other elements are placed on or in the middle of other elements. The same constituent elements are denoted by the same reference numerals throughout the specification.
雖然,第一、第二等為表示多樣的構成元件而使用,但是,這些術語並不限定構成元件。這些術語是為將一個構成元件與其他構成元件區別而使用的。因此,以下所述的第一構成元件在本發明的技術思想內也可為第二構成元件。Although the first, second, etc. are used to represent various constituent elements, these terms are not limited to constituent elements. These terms are used to distinguish one constituent element from another constituent element. Therefore, the first constituent element described below may also be the second constituent element within the technical idea of the present invention.
以下,參照附圖說明本發明的實施例。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1圖是顯示根據本發明的一實施例的基板剝離方法的流程圖。Fig. 1 is a flow chart showing a substrate peeling method according to an embodiment of the present invention.
根據第1圖,基板剝離方法,可以包括:形成基板結合體的步驟(S10);在工作臺上安裝基板結合體的步驟(S20);測定距離測定部和基板結合體之間的距離的步驟(S30);第一雷射掃描步驟(S40);第一雷射掃描後,測定距離測定部和基板結合體之間的距離的步驟(S50);調整雷射的焦點位置的步驟(S60);第二雷射掃描步驟(S70);分離第一基板和第二基板的步驟(S80)。According to FIG. 1, the substrate peeling method may include a step of forming a substrate assembly (S10), a step of mounting a substrate assembly on a table (S20), and a step of measuring a distance between the distance measuring portion and the substrate assembly. (S30); a first laser scanning step (S40); a step of measuring a distance between the distance measuring portion and the substrate assembly after the first laser scanning (S50); and a step of adjusting the focus position of the laser (S60) a second laser scanning step (S70); a step of separating the first substrate and the second substrate (S80).
以下,參照第2圖及第3圖說明形成基板結合體的步驟(S10)。第2圖是根據本發明的一實施例的基板結合體的截面圖。第3圖是根據本發明的一實施例的基板結合體的俯視圖。根據第2圖,基板結合體10可包括第一基板11、第二基板12及黏接層13。Hereinafter, a step (S10) of forming a substrate assembly will be described with reference to FIGS. 2 and 3 . Fig. 2 is a cross-sectional view showing a substrate assembly according to an embodiment of the present invention. Fig. 3 is a plan view of a substrate assembly in accordance with an embodiment of the present invention. According to FIG. 2, the substrate assembly 10 may include a first substrate 11, a second substrate 12, and an adhesive layer 13.
第一基板11可由光學上透明的材料而形成,至少可由能夠透過雷射L的材料而形成。例如,第一基板11可由玻璃或透明的合成樹脂形成。第一基板11相對於第二基板12彎曲程度少,可作為用於支撐第二基板12的載體基板使用,但並不限定於此。The first substrate 11 may be formed of an optically transparent material, and may be formed of at least a material capable of transmitting laser light L. For example, the first substrate 11 may be formed of glass or a transparent synthetic resin. The first substrate 11 is less curved with respect to the second substrate 12 and can be used as a carrier substrate for supporting the second substrate 12, but is not limited thereto.
第二基板12可配置於第一基板11上。第二基板12可結合於第一基板11。第二基板12可為具有軟性的基板。第二基板12可為用於形成軟性顯示裝置的顯示面板的基板,但並不限定於此。第二基板12為用於形成軟性顯示裝置的顯示面板的基板時,雖未示於圖,第二基板12,在其內部可以包括用於顯示圖像的顯示層以及用於控制顯示層的包含薄膜電晶體的薄膜電晶體層。第二基板12可為用於形成具有軟性的有機發光顯示面板、液晶顯示面板或電泳顯示面板的基板,但並不限定於此。第二基板12可形成在第一基板11上。當軟性第二基板12形成在彎曲程度相對少的第一基板11上時,防止第二基板12的形狀變形,可更加容易形成第二基板12。The second substrate 12 can be disposed on the first substrate 11 . The second substrate 12 may be bonded to the first substrate 11. The second substrate 12 may be a substrate having a softness. The second substrate 12 may be a substrate for forming a display panel of a flexible display device, but is not limited thereto. When the second substrate 12 is a substrate for forming a display panel of a flexible display device, although not shown in the drawing, the second substrate 12 may include therein a display layer for displaying an image and for controlling the display layer. A thin film transistor layer of a thin film transistor. The second substrate 12 may be a substrate for forming a flexible organic light-emitting display panel, a liquid crystal display panel, or an electrophoretic display panel, but is not limited thereto. The second substrate 12 may be formed on the first substrate 11. When the soft second substrate 12 is formed on the first substrate 11 having a relatively small degree of curvature, the shape of the second substrate 12 is prevented from being deformed, and the second substrate 12 can be formed more easily.
第二基板12可包括主基板12a及輔助層12b。主基板12a可包括顯示層及薄膜電晶體層。輔助層12b可配置在主基板12a上。輔助層12b可黏貼於主基板12a。雖未示於圖,輔助層12b可透過黏接層黏貼於主基板12a。輔助層12b配置在主基板12a的上部,在分離第一基板11和第二基板12後支撐主基板12a,從而,防止主基板12b的移動,而使以後的製程變得容易。而且,輔助層12b可從外部保護主基板12。輔助層12b可覆蓋主基板12的側面,透過後述的第二黏接層13b可與第一基板11結合。輔助層12b可由包含聚萘二甲酸乙二醇酯(polyethylene naphthalate)、聚對苯二甲酸乙二酯(polyethylene terephthalate)、聚碳酸酯(polycarbonate)、聚醚碸(Polyethersulfone)等塑膠,以及包含不銹鋼等的金屬箔等形成,但並不限定於此。The second substrate 12 may include a main substrate 12a and an auxiliary layer 12b. The main substrate 12a may include a display layer and a thin film transistor layer. The auxiliary layer 12b may be disposed on the main substrate 12a. The auxiliary layer 12b can be adhered to the main substrate 12a. Although not shown, the auxiliary layer 12b can be adhered to the main substrate 12a through the adhesive layer. The auxiliary layer 12b is disposed on the upper portion of the main substrate 12a, and supports the main substrate 12a after separating the first substrate 11 and the second substrate 12, thereby preventing the movement of the main substrate 12b and facilitating subsequent processes. Moreover, the auxiliary layer 12b can protect the main substrate 12 from the outside. The auxiliary layer 12b may cover the side surface of the main substrate 12, and may be coupled to the first substrate 11 through a second adhesive layer 13b to be described later. The auxiliary layer 12b may comprise plastics such as polyethylene naphthalate, polyethylene terephthalate, polycarbonate, polyethersulfone, and the like, and stainless steel. A metal foil or the like is formed, but is not limited thereto.
黏接層13可配置在第一基板11和第二基板12之間。黏接層13可結合第一基板11和第二基板12。因雷射,黏接層13的至少局部區域結合第一基板11和第二基板12的黏接力減弱。The adhesive layer 13 may be disposed between the first substrate 11 and the second substrate 12. The adhesive layer 13 can bond the first substrate 11 and the second substrate 12. Due to the laser, at least a partial region of the adhesive layer 13 is weakened in combination with the adhesion of the first substrate 11 and the second substrate 12.
黏接層13可以包括第一黏接層13a及第二黏接層13b。第一黏接層13a比第二黏接層13b配置在基板結合體10的內側。更詳細而言,第一黏接層13a可配置在主基板12a和第一基板11之間。當雷射照射在第一黏接層13a時,構成物質會發生變形,因此,結合第一基板11和第二基板12的黏接力變弱。例如,第一黏接層13a可由光降解性高分子物質、氫化氮化矽或氫化非晶矽形成,但並不限定於此。當第一黏接層13a由光降解性高分子物質形成時,若雷射照射到第一黏接層13a,則高分子物質的共價鍵被斷裂或碳化,而第一黏接層13a被分解。當第一黏接層13a由氫化氮化矽或氫化非晶矽形成時,若雷射照射到第一黏接層13a,則氫化氮化矽或氫化非晶矽所含有的氫被排放,同時,第一黏接層13a和第一基板11的結合力變弱而能夠容易分離第一基板11和第二基板12。The adhesive layer 13 may include a first adhesive layer 13a and a second adhesive layer 13b. The first adhesive layer 13a is disposed inside the substrate assembly 10 than the second adhesive layer 13b. In more detail, the first adhesive layer 13a may be disposed between the main substrate 12a and the first substrate 11. When the laser is irradiated on the first adhesive layer 13a, the constituent material is deformed, and therefore, the bonding force in combination with the first substrate 11 and the second substrate 12 becomes weak. For example, the first adhesive layer 13a may be formed of a photodegradable polymer material, yttrium hydride or hydrogenated amorphous yttrium, but is not limited thereto. When the first adhesive layer 13a is formed of a photodegradable polymer material, if the laser is irradiated onto the first adhesive layer 13a, the covalent bond of the polymer substance is broken or carbonized, and the first adhesive layer 13a is break down. When the first adhesive layer 13a is formed of hydrogenated hafnium nitride or hydrogenated amorphous germanium, if the laser is irradiated onto the first adhesive layer 13a, hydrogen contained in the hydrogenated tantalum nitride or hydrogenated amorphous germanium is discharged while The bonding force between the first adhesive layer 13a and the first substrate 11 is weakened, and the first substrate 11 and the second substrate 12 can be easily separated.
第二黏接層13b比第一黏接層13a可配置在基板結合體10的外側。第二黏接層13b可以配置在基板結合體11的週邊。更詳細而言,第二黏接層13b配置在輔助層12b和第一基板11之間,可以結合輔助層12b和第一基板11。即便照射雷射,第二黏接層13b的黏接力也不會變弱。The second adhesive layer 13b may be disposed outside the substrate assembly 10 than the first adhesive layer 13a. The second adhesive layer 13b may be disposed at the periphery of the substrate assembly 11. In more detail, the second adhesive layer 13b is disposed between the auxiliary layer 12b and the first substrate 11, and the auxiliary layer 12b and the first substrate 11 may be bonded. Even if the laser is irradiated, the adhesion of the second adhesive layer 13b does not become weak.
雖未示於圖,基板結合體,為輔助第一基板11和第二基板12的結合,在黏接層13和第一基板11之間可進一步包括黏接層。Although not shown in the figure, the substrate assembly may further include an adhesive layer between the adhesive layer 13 and the first substrate 11 in order to assist the bonding of the first substrate 11 and the second substrate 12.
參照第3圖,基板結合體10可分為第一區域R1及第二區域R2。第一區域R1是在第一雷射掃描步驟(S40)照射雷射的基板結合體10的區域,第二區域R2是在第二雷射掃描步驟(S70)照射雷射的基板結合體10的區域。雷射掃描時,當雷射的幅度dL比基板結合體10的幅度dS小時,透過一次雷射掃描不能將雷射照射到基板結合體10的整個區域,因此,基板結合體10分為第一區域R1和第二區域R2,從而經兩次進行雷射掃描。即便進行兩次雷射掃描,雷射也無法照射到基板結合體10的整個區域時,可以進一步進行雷射掃描,基板結合體10除第一區域R1和第二區域R2之外還可進一步區分。Referring to FIG. 3, the substrate assembly 10 can be divided into a first region R1 and a second region R2. The first region R1 is a region of the substrate assembly 10 that irradiates the laser in the first laser scanning step (S40), and the second region R2 is the substrate assembly 10 that irradiates the laser in the second laser scanning step (S70). region. In the laser scanning, when the amplitude dL of the laser is smaller than the amplitude dS of the substrate assembly 10, the laser cannot be irradiated to the entire area of the substrate assembly 10 by one laser scanning, and therefore, the substrate assembly 10 is divided into the first. The region R1 and the second region R2 are subjected to laser scanning twice. Even if the laser scanning is performed twice, the laser cannot be irradiated to the entire area of the substrate assembly 10, and laser scanning can be further performed. The substrate assembly 10 can be further distinguished in addition to the first region R1 and the second region R2. .
以下,參照第4圖說明將基板結合體10安裝在工作臺21上的步驟(S20)。第4圖是顯示將根據本發明的一實施例的基板結合體安裝在工作臺的步驟的圖。基板結合體10安裝在工作臺21時,基板結合體10可以配置成與工作檯面對,即第一基板11位於基板結合體的上部,第二基板12位於基板結合體的下部。Hereinafter, the step of attaching the substrate assembly 10 to the table 21 will be described with reference to Fig. 4 (S20). Fig. 4 is a view showing a step of mounting a substrate assembly according to an embodiment of the present invention on a workbench. When the substrate assembly 10 is mounted on the stage 21, the substrate assembly 10 may be disposed to face the table, that is, the first substrate 11 is located at an upper portion of the substrate assembly, and the second substrate 12 is located at a lower portion of the substrate assembly.
工作臺21支撐基板結合體10,基板剝離裝置可以配置在工作臺21上。工作臺21可包含於基板剝離裝置20。以下,參照第5圖及第6圖說明基板剝離裝置20。第5圖是根據本發明的一實施例的基板剝離裝置的框圖。第6圖是示出在根據本發明的一實施例的基板剝離裝置配置基板結合體的立體圖。The stage 21 supports the substrate assembly 10, and the substrate peeling device can be disposed on the table 21. The stage 21 can be included in the substrate peeling device 20. Hereinafter, the substrate peeling device 20 will be described with reference to FIGS. 5 and 6. Fig. 5 is a block diagram of a substrate peeling apparatus according to an embodiment of the present invention. Fig. 6 is a perspective view showing a substrate assembly in which a substrate peeling device is disposed according to an embodiment of the present invention.
參照第5圖及第6圖,基板剝離裝置20可以包括工作臺21、雷射輸出部22、距離測定部23及控制部24。Referring to FIGS. 5 and 6 , the substrate peeling device 20 may include a table 21 , a laser output unit 22 , a distance measuring unit 23 , and a control unit 24 .
在工作臺21上可以配置基板結合體10,工作臺21可以支撐基板結合體10。工作臺21可上下移動,工作臺21的移動可透過控制部24來控制。The substrate assembly 10 can be disposed on the table 21, and the table 21 can support the substrate assembly 10. The table 21 is movable up and down, and the movement of the table 21 can be controlled by the control unit 24.
雷射輸出部22可與工作臺21隔開配置於工作臺21的上部。雷射輸出部22可輸出雷射,輸出的雷射22可照射於配置在工作臺21上的基板結合體10。雷射輸出部22可朝水平方向移動,雷射輸出部22朝水平方向移動的同時輸出雷射,從而在基板結合體10可以進行雷射掃描。The laser output unit 22 is disposed at an upper portion of the table 21 from the table 21 . The laser output unit 22 can output a laser, and the output laser 22 can be irradiated onto the substrate assembly 10 disposed on the stage 21. The laser output unit 22 is movable in the horizontal direction, and the laser output unit 22 outputs the laser while moving in the horizontal direction, so that the substrate assembly 10 can perform laser scanning.
距離測定部23可與工作臺21隔開配置於工作臺21上部。距離測定部23可以測定距離測定部23和配置在工作臺21上的基板結合體10之間的距離。距離測定部23可以包括互相隔開的第一距離測定部23a和第二距離測定部23b。第一距離測定部23a配置於第一區域R1上,第二距離測定部23b配置在第二區域R2上,但並不限定於此。The distance measuring unit 23 is disposed on the upper portion of the table 21 so as to be spaced apart from the table 21 . The distance measuring unit 23 can measure the distance between the distance measuring unit 23 and the substrate assembly 10 disposed on the table 21. The distance measuring unit 23 may include a first distance measuring unit 23a and a second distance measuring unit 23b that are spaced apart from each other. The first distance measuring unit 23a is disposed on the first region R1, and the second distance measuring unit 23b is disposed in the second region R2. However, the present invention is not limited thereto.
控制部24可以控制工作臺21、雷射輸出部22及距離測定部23的動作。控制部23對應在距離測定部23測定的距離測定部23和基板結合體10之間的距離,可以控制工作臺21的上下移動。基板剝離裝置20包括控制部24,控制部對應在距離測定部23測定的距離測定部23和基板結合體10之間的距離控制工作臺21的上下移動,從而可以調整從雷射輸出部22輸出的雷射的焦點所處的基板結合體10內的區域,增加雷射的焦點所處的區域和黏接層13重疊的範圍,可以有效地剝離基板結合體10。並且,減少雷射的焦點所處的區域與第二基板12重疊的範圍,可以減少向基板結合體10照射雷射時因雷射第二基板12被損傷。對此,在後面詳細說明。The control unit 24 can control the operations of the table 21, the laser output unit 22, and the distance measuring unit 23. The control unit 23 can control the vertical movement of the table 21 in accordance with the distance between the distance measuring unit 23 and the substrate assembly 10 measured by the distance measuring unit 23. The substrate peeling device 20 includes a control unit 24 that controls the vertical movement of the table 21 in accordance with the distance between the distance measuring unit 23 and the substrate assembly 10 measured by the distance measuring unit 23, so that the output from the laser output unit 22 can be adjusted. The region in the substrate assembly 10 where the focus of the laser is placed increases the range in which the focus of the laser is located and the extent to which the adhesive layer 13 overlaps, so that the substrate assembly 10 can be effectively peeled off. Further, by reducing the range in which the region where the focus of the laser is located overlaps with the second substrate 12, it is possible to reduce the damage of the second substrate 12 by the laser when the laser beam is applied to the substrate assembly 10. This will be described in detail later.
以下,參照第7圖說明測定距離測定部23和基板結合體10之間的距離的步驟(S30)。第7圖是顯示測定根據本發明的一實施例的距離測定部和基板結合體之間的距離的步驟的圖。根據第7圖,距離測定部23可以放出試驗光TL。試驗光TL可透過基板結合體10反射,更詳細而言,可透過第一基板11的上部面反射。距離測定部23可接受透過基板結合體10反射的試驗光TL,距離測定部23可由接受的試驗光TL計算距離測定部23和基板結合體10之間的距離。第一距離測定部23a和第二距離測定部23b可以測定基板結合體10的互相不同區域的距離。第一距離測定部23a可以測定配置在第一距離測定部23a的下部的第一區域R1的局部區域和第一距離測定部23a之間的距離da。第二距離測定部23b可以測定配置在第二距離測定部23b的下部的第二區域R2的局部區域和第二距離測定部23b之間的距離db。根據幾個實施例,也可以省略測定距離測定部23和基板結合體10之間的距離的步驟(S30)。Hereinafter, a step (S30) of measuring the distance between the distance measuring unit 23 and the substrate assembly 10 will be described with reference to Fig. 7 . Fig. 7 is a view showing a step of measuring the distance between the distance measuring unit and the substrate assembly according to an embodiment of the present invention. According to Fig. 7, the distance measuring unit 23 can emit the test light TL. The test light TL can be reflected by the substrate assembly 10, and more specifically, can be reflected through the upper surface of the first substrate 11. The distance measuring unit 23 can receive the test light TL reflected by the substrate assembly 10, and the distance measuring unit 23 can calculate the distance between the distance measuring unit 23 and the substrate assembly 10 from the received test light TL. The first distance measuring unit 23a and the second distance measuring unit 23b can measure the distances between the mutually different regions of the substrate assembly 10. The first distance measuring unit 23a can measure the distance da between the partial region of the first region R1 disposed at the lower portion of the first distance measuring unit 23a and the first distance measuring unit 23a. The second distance measuring unit 23b can measure the distance db between the partial region of the second region R2 disposed at the lower portion of the second distance measuring unit 23b and the second distance measuring unit 23b. According to several embodiments, the step of measuring the distance between the distance measuring unit 23 and the substrate assembly 10 may be omitted (S30).
以下,參照第8圖及第9圖說明第一雷射掃描步驟(S40)。第8圖及第9圖是顯示根據本發明的一實施例的第一雷射掃描步驟的圖。根據第8圖及第9圖,在第一雷射掃描步驟(S40),雷射輸出部22輸出第一雷射L1,透過水平移動第一區域R1的上部,向第一區域R1照射第一雷射L1。在第一雷射掃描步驟(S40),第一雷射L1的第一焦點f1可位於黏接層13。若雷射照射到黏接層13,則第一黏接層13a的黏接力減弱而可以分離第一基板11和第二基板12,因此,當第一雷射L1的焦點位於黏接層13時,才能有效地分離基板結合體10。基板結合體10的各層的厚度可以是事先設定的,由此,工作臺21的高度也可以設定為第一雷射L1的第一焦點f1位於黏接層13。Hereinafter, the first laser scanning step (S40) will be described with reference to Figs. 8 and 9. 8 and 9 are diagrams showing a first laser scanning step in accordance with an embodiment of the present invention. According to FIGS. 8 and 9, in the first laser scanning step (S40), the laser output unit 22 outputs the first laser L1, and transmits the first portion of the first region R1 through the horizontal movement, and irradiates the first region R1 with the first light. Laser L1. In the first laser scanning step (S40), the first focus f1 of the first laser L1 may be located on the adhesive layer 13. If the laser is irradiated to the adhesive layer 13, the adhesion of the first adhesive layer 13a is weakened, and the first substrate 11 and the second substrate 12 can be separated. Therefore, when the focus of the first laser L1 is located on the adhesive layer 13, In order to effectively separate the substrate assembly 10. The thickness of each layer of the substrate assembly 10 may be set in advance, whereby the height of the table 21 may be set such that the first focus f1 of the first laser L1 is located on the adhesive layer 13.
根據幾個實施例,雖未示於圖,基板剝離方法可以進一步包括對應在第一雷射掃描步驟(S40)之前的測定距離測定部和基板結合體之間的距離的步驟(S30)測定的距離測定部23和基板結合體10之間的距離,調整雷射的焦點位置的步驟。控制部24保持距離測定部23和基板結合體10之間的距離,進行第一雷射掃描(S40)時,若判斷第一雷射L1的第一焦點f1不在黏接層13a,則透過調整第一雷射L1的第一焦點f1的位置,使第一雷射L1的第一焦點f1位於黏接層13a。第一雷射L1的第一焦點f1的位置調整可透過上下移動工作臺,或者上下移動雷射輸出部22,或者調整從雷射輸出部22輸出的第一雷射L1的第一焦點f1的距離來實現。According to several embodiments, although not shown, the substrate peeling method may further include the step (S30) of measuring the distance between the distance measuring portion and the substrate assembly before the first laser scanning step (S40). The step of adjusting the focus position of the laser by the distance between the measuring unit 23 and the substrate assembly 10. The control unit 24 maintains the distance between the distance measuring unit 23 and the substrate assembly 10, and when the first laser scanning (S40) is performed, if it is determined that the first focus f1 of the first laser L1 is not in the adhesive layer 13a, the transmission adjustment is performed. The position of the first focus f1 of the first laser L1 is such that the first focus f1 of the first laser L1 is located on the adhesive layer 13a. The position adjustment of the first focus f1 of the first laser L1 can be transmitted through the upper and lower moving table, or the laser output unit 22 can be moved up and down, or the first focus f1 of the first laser L1 output from the laser output unit 22 can be adjusted. Distance is achieved.
以下,參照第10圖說明第一雷射掃描步驟(S40)後的基板結合體10。第10圖是顯示第一雷射掃描後的基板結合體的圖。在第一雷射掃描步驟(S40)後,被照射第一雷射L1的第一區域R1內的第一黏接層13a的黏接力減弱,從而,透過第一黏接層13a進行黏接的第一區域R1內的第一基板11和第二基板12可互相分離,而第二基板12被翹起。由於第一區域R1內的第二黏接層13b的黏接力沒有變弱,因此透過第二黏接層13b進行黏接的第一區域R1內的第一基板11和第二基板12可保持互相結合狀態。由於第一雷射L1沒有照射到第二區域R2,因此,第二區域R2內的第一基板11和第二基板12可以保持結合狀態。如上所述,在第一雷射掃描步驟(S40)之後,在基板結合體10的局部區域,第一基板11和第二基板12保持結合,而其他區域第一基板11和第二基板12可以分離。與第二基板分離的軟性第一基板11有可能發生變形,因此,基板結合體10的形狀也有可能發生變形。具體而言,如第10圖所示,由於基板結合體10的上部面傾斜而不能保持水平,因此,第二區域R2內的黏接層13也不能保持水平。Hereinafter, the substrate assembly 10 after the first laser scanning step (S40) will be described with reference to FIG. Fig. 10 is a view showing a substrate assembly after the first laser scanning. After the first laser scanning step (S40), the adhesion of the first adhesive layer 13a in the first region R1 of the first laser beam L1 is weakened, thereby being bonded through the first adhesive layer 13a. The first substrate 11 and the second substrate 12 in the first region R1 may be separated from each other, and the second substrate 12 is lifted. Since the adhesive force of the second adhesive layer 13b in the first region R1 is not weakened, the first substrate 11 and the second substrate 12 in the first region R1 adhered through the second adhesive layer 13b can be kept from each other. Combined state. Since the first laser L1 is not irradiated to the second region R2, the first substrate 11 and the second substrate 12 in the second region R2 can maintain the bonded state. As described above, after the first laser scanning step (S40), in a partial region of the substrate assembly 10, the first substrate 11 and the second substrate 12 remain bonded, while the other regions of the first substrate 11 and the second substrate 12 may Separation. The soft first substrate 11 separated from the second substrate may be deformed, and therefore, the shape of the substrate assembly 10 may be deformed. Specifically, as shown in FIG. 10, since the upper surface of the substrate assembly 10 is inclined and cannot be horizontal, the adhesive layer 13 in the second region R2 cannot be horizontal.
以下,參照第11圖說明第一雷射掃描後測定距離測定部23和基板結合體10之間的距離的步驟(S50)。第11圖是顯示根據本發明的一實施例的第一雷射掃描後測定距離測定部和基板結合體之間的距離的步驟的圖。根據第11圖,距離測定部23可以放出試驗光TL,接受透過基板結合體10反射的試驗光TL可以檢測距離測定部23和基板結合體之間的距離。第一距離測定部23a可以測定配置在第一距離測定部23a的下部的第一區域R1的局部區域和第一距離測定部23a之間的距離da`。第二距離測定部23b可以測定配置在第二距離測定部23b的下部的第二區域R2的局部區域和第二距離測定部23b之間的距離db`。Hereinafter, a step (S50) of measuring the distance between the distance measuring unit 23 and the substrate assembly 10 after the first laser scanning will be described with reference to FIG. Figure 11 is a view showing a step of measuring the distance between the distance measuring portion and the substrate assembly after the first laser scanning according to an embodiment of the present invention. According to Fig. 11, the distance measuring unit 23 can emit the test light TL, and the test light TL reflected by the transmission substrate assembly 10 can detect the distance between the distance measuring unit 23 and the substrate assembly. The first distance measuring unit 23a can measure the distance da' between the partial region of the first region R1 disposed at the lower portion of the first distance measuring portion 23a and the first distance measuring portion 23a. The second distance measuring unit 23b can measure the distance db' between the partial region of the second region R2 disposed at the lower portion of the second distance measuring portion 23b and the second distance measuring portion 23b.
以下,參照第12圖說明調整雷射的焦點位置的步驟(S60)。第12圖是顯示根據本發明的一實施例的雷射的焦點位置調整步驟的圖。雷射的焦點位置對應在第一雷射掃描後所測定的距離測定部23和基板結合體10之間的距離進行調整。控制部24從第一雷射掃描後測定的距離測定部23和基板結合體10之間的距離可以檢測基板結合體10的上部面的位置,由此可以匯出第二區域R2內的黏接層13的位置。為檢測基板結合體10的上部面的位置,距離測定部23從所入射的試驗光TL計算與基板結合體10的上部面的絕對距離,或者比較在第一雷射掃描步驟(S40)之前的測定距離測是定部23和基板結合體10之間的距離的步驟(S30)所計算的距離測定部23和基板結合體10的上部面之間的距離而可以利用距離之差。根據所計算的第一雷射掃描後測定的距離測定部23和基板結合體10之間的距離,控制部24可以調整雷射的焦點位置以便在第二雷射掃描步驟(S70)輸出的雷射的焦點位置與黏接層13重疊的區域增加。為此,可以調整雷射的焦點位置以便在第二雷射掃描步驟(S70)輸出的雷射的焦點位置在第二區域R2的中央位於黏接層13的厚度的中央。在第二雷射掃描步驟(S70)輸出的雷射的焦點位置和黏接層13重疊的區域增加時,在第二雷射掃描步驟(S70)照射到第一黏接層13a的雷射的量增加而有效地減弱第一黏接層13a的結合力,從而可以容易分離第一基板11和第二基板12。而且,第一雷射掃描步驟(S40)後由於第一基板11和第二基板12翹起,因此,第二區域R2內的第二基板12的位置與第一雷射掃描步驟(S40)之前相比有可能移動到上部。從而,以與第一雷射掃描步驟(S40)相同的雷射的焦點位置進行第二雷射掃描步驟(S70)時,雷射的焦點可位於第二基板12,此時,會對第二基板12導致損傷。根據本發明的一實施例的基板剝離方法包括調整雷射的焦點位置的步驟(S60),從而,在剝離基板時,可以減少因雷射而引起的第二基板12的損傷。為調整雷射的焦點位置,控制部24可以上下移動工作臺21。例如,在第一雷射掃描步驟(S40)後,第二基板12翹起時,控制部24可以將工作臺21移動到下側。Hereinafter, the step of adjusting the focus position of the laser (S60) will be described with reference to FIG. Figure 12 is a diagram showing a focus position adjustment step of a laser according to an embodiment of the present invention. The focus position of the laser is adjusted in accordance with the distance between the distance measuring unit 23 and the substrate assembly 10 measured after the first laser scanning. The distance between the distance measuring unit 23 and the substrate assembly 10 measured after the first laser scanning can detect the position of the upper surface of the substrate assembly 10, whereby the bonding in the second region R2 can be extracted. The location of layer 13. In order to detect the position of the upper surface of the substrate assembly 10, the distance measuring unit 23 calculates the absolute distance from the upper surface of the substrate assembly 10 from the incident test light TL, or compares it before the first laser scanning step (S40). The distance between the distance measuring unit 23 and the upper surface of the substrate assembly 10 calculated by the step (S30) of measuring the distance between the fixed portion 23 and the substrate assembly 10 can be used as the difference between the distances. Based on the calculated distance between the distance measuring unit 23 and the substrate assembly 10 measured after the first laser scanning, the control unit 24 can adjust the focus position of the laser to output the lightning in the second laser scanning step (S70). The area where the focus position of the shot overlaps with the adhesive layer 13 increases. To this end, the focus position of the laser can be adjusted so that the focus position of the laser outputted in the second laser scanning step (S70) is located at the center of the thickness of the adhesive layer 13 in the center of the second region R2. When the focus position of the laser outputted by the second laser scanning step (S70) and the area where the adhesive layer 13 overlap are increased, the laser of the first adhesive layer 13a is irradiated in the second laser scanning step (S70). The amount is increased to effectively weaken the bonding force of the first adhesive layer 13a, so that the first substrate 11 and the second substrate 12 can be easily separated. Moreover, since the first substrate 11 and the second substrate 12 are lifted after the first laser scanning step (S40), the position of the second substrate 12 in the second region R2 is before the first laser scanning step (S40) It is possible to move to the upper part compared to it. Therefore, when the second laser scanning step (S70) is performed at the same focus position of the laser as the first laser scanning step (S40), the focus of the laser may be located on the second substrate 12, and at this time, the second The substrate 12 causes damage. The substrate peeling method according to an embodiment of the present invention includes the step of adjusting the focus position of the laser (S60), whereby the damage of the second substrate 12 due to the laser can be reduced when the substrate is peeled off. In order to adjust the focus position of the laser, the control unit 24 can move the table 21 up and down. For example, after the first laser scanning step (S40), when the second substrate 12 is lifted up, the control portion 24 can move the table 21 to the lower side.
以下,參照第13圖及第14圖說明第二雷射掃描步驟(S70)。第13圖及第14圖是顯示根據本發明的一實施例的第二雷射掃描步驟的圖。根據第13圖及第14圖,在第二雷射掃描步驟(S70),雷射輸出部22輸出具有第二焦點f2的第二雷射L2,透過水平移動第二區域R2的上部,可向第二區域R2照射第二雷射L2。第二雷射L2實際上可與第一雷射L1相同,從雷射輸出部22到第二焦點f2的距離實際上可與雷射輸出部22到第一焦點f1的距離相同。第二焦點13的至少一部分可與黏接層13重疊。例如,在第二區域R2的中央R2C,第二焦點f2可位於黏接層13的厚度的中央。Hereinafter, the second laser scanning step (S70) will be described with reference to FIGS. 13 and 14. Figures 13 and 14 are diagrams showing a second laser scanning step in accordance with an embodiment of the present invention. According to FIGS. 13 and 14, in the second laser scanning step (S70), the laser output unit 22 outputs the second laser L2 having the second focus f2, and transmits the upper portion of the second region R2 through the horizontal direction. The second region R2 illuminates the second laser L2. The second laser L2 may be substantially the same as the first laser L1, and the distance from the laser output 22 to the second focus f2 may be substantially the same as the distance from the laser output 22 to the first focus f1. At least a portion of the second focus 13 may overlap the adhesive layer 13. For example, in the center R2C of the second region R2, the second focus f2 may be located at the center of the thickness of the adhesive layer 13.
以下,參照第15圖說明第二雷射掃描步驟(S70)後的基板結合體。第15圖是顯示第二雷射掃描後的基板結合體的圖。因第二雷射掃描步驟(S70),第二區域R2內的第一黏接層13a的黏接力有可能變弱,從而,在透過第一黏接層13a結合的第一基板11和第二基板12的區域,第一基板11和第二基板12可以互相分離。透過第二黏接層13b結合第一基板11和第二基板12的區域,由於第二黏接層13b的黏接力不會被雷射變弱,從而可以保持結合狀態。Hereinafter, the substrate assembly after the second laser scanning step (S70) will be described with reference to Fig. 15. Fig. 15 is a view showing the substrate assembly after the second laser scanning. Due to the second laser scanning step (S70), the adhesion of the first adhesive layer 13a in the second region R2 may be weakened, thereby, the first substrate 11 and the second bonded through the first adhesive layer 13a. In the region of the substrate 12, the first substrate 11 and the second substrate 12 may be separated from each other. By bonding the regions of the first substrate 11 and the second substrate 12 through the second adhesive layer 13b, since the adhesion of the second adhesive layer 13b is not weakened by the laser, the bonding state can be maintained.
在分離第一基板11和第二基板12的步驟(S80)中,在透過第二黏接層13b結合第一基板11和第二基板12的區域也透過外力分離第一基板11和第二基板12,從而可以完全分離第一基板11和第二基板12。In the step (S80) of separating the first substrate 11 and the second substrate 12, the first substrate 11 and the second substrate are also separated by an external force in a region where the first substrate 11 and the second substrate 12 are bonded through the second bonding layer 13b. 12, whereby the first substrate 11 and the second substrate 12 can be completely separated.
以下,參照第16圖說明本發明的其他實施例。第16圖是顯示根據本發明的其他實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟。參照第16圖,根據本發明的其他實施例,在雷射的焦點位置調整步驟(S60),為調整雷射的焦點位置可以上下移動雷射輸出部22。例如,在第一雷射掃描步驟(S40)後第二基板12翹起時,控制部24可以將雷射輸出22移動到上側以便在第二雷射掃描步驟(S70)輸出的第二雷射L2的焦點f2的位置與黏接層13重疊的區域增加。對根據本發明的其他實施例的基板剝離方法的其他說明實際上與對參照第1圖至第15圖說明的基板剝離方法的說明相同,因此省略對其的說明。Hereinafter, other embodiments of the present invention will be described with reference to Fig. 16. Figure 16 is a diagram showing the steps of adjusting the focus position of the laser and the second laser scanning step in accordance with other embodiments of the present invention. Referring to Fig. 16, in accordance with other embodiments of the present invention, in the laser focus position adjustment step (S60), the laser output portion 22 can be moved up and down to adjust the focus position of the laser. For example, when the second substrate 12 is tilted after the first laser scanning step (S40), the control portion 24 may move the laser output 22 to the upper side to output the second laser at the second laser scanning step (S70). The position of the focus f2 of L2 overlaps with the area where the adhesive layer 13 overlaps. The other description of the substrate peeling method according to another embodiment of the present invention is substantially the same as the description of the substrate peeling method described with reference to FIGS. 1 to 15, and therefore the description thereof will be omitted.
以下,參照第17圖說明本發明的其他又另一實施例。第17圖是顯示根據本發明的其他又另一實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟。參照第17圖,根據本發明的其他實施例,在雷射的焦點位置調整步驟(S60),為調整雷射的焦點位置,可以改變在雷射輸出部22輸出的雷射的焦點距離。例如,在第一雷射掃描步驟(S40)後第二基板12翹起時,控制部24可以減少雷射的焦點距離以便在第二雷射掃描步驟(S70)輸出的第二雷射L2的焦點f2的位置與黏接層13重疊的區域增加,由此,第二焦點f2可以比第一焦點f1位於上部。對根據本發明的其他另一實施例的基板剝離方法的其他說明實際上與對參照第1圖至第15圖說明的基板剝離方法的說明相同,因此省略對其的說明。Hereinafter, still another embodiment of the present invention will be described with reference to Fig. 17. Figure 17 is a diagram showing the steps of adjusting the focus position of the laser and the second laser scanning step according to still another embodiment of the present invention. Referring to Fig. 17, in accordance with other embodiments of the present invention, in the focus position adjustment step (S60) of the laser, in order to adjust the focus position of the laser, the focus distance of the laser outputted from the laser output portion 22 can be changed. For example, when the second substrate 12 is tilted after the first laser scanning step (S40), the control portion 24 can reduce the focal distance of the laser so as to output the second laser L2 at the second laser scanning step (S70). The position of the focus f2 overlaps with the area where the adhesive layer 13 overlaps, whereby the second focus f2 can be located above the first focus f1. The other description of the substrate peeling method according to still another embodiment of the present invention is substantially the same as the description of the substrate peeling method described with reference to FIGS. 1 to 15, and therefore the description thereof will be omitted.
以下,參照第18圖說明本發明的其他又另一實施例。第18圖是顯示根據本發明的其他又另一實施例的調整雷射的焦點位置的步驟及第二雷射掃描步驟的圖。根據本發明的其他又另一實施例,控制板24可從在測定距離測定部23和基板結合體10之間的距離的步驟(S30)所測定的距離測定部23和基板結合體10之間的距離匯出基板結合體10的上部面傾斜的程度,由此,可以匯出配置在第二區域R2內的黏接層13傾斜的程度。基板結合體10的上部面傾斜的程度可由在第一雷射掃描後測定距離測定部23和基板結合體10之間的距離的步驟(S50)所測定的第一距離測定部23a和基板結合體10之間的距離da`和第二距離測定部23b和基板結合體10之間的距離db`之差匯出。在調整雷射的焦點位置的步驟(S60)可以使工作臺21旋轉以便黏接層13成為水平。旋轉工作臺21的同時,透過上下移動工作臺21或上下移動雷射輸出部22,可以將第二雷射L2的焦點f2配置在黏接層13內。根據本發明的其他又另一實施例,可以控制雷射L2的焦點不脫離黏接層13,由此可以順利分離第一基板11和第二基板12,並可以防止第二基板12因雷射損傷。對根據本發明的其他另一實施例的基板剝離方法的其他說明實際上與對參照第1圖至第15圖說明的基板剝離方法的說明相同,因此省略對其的說明。Hereinafter, still another embodiment of the present invention will be described with reference to Fig. 18. Figure 18 is a diagram showing the steps of adjusting the focus position of the laser and the second laser scanning step according to still another embodiment of the present invention. According to still another embodiment of the present invention, the control board 24 is connectable from the distance measuring section 23 and the substrate assembly 10 measured in the step (S30) of measuring the distance between the distance measuring section 23 and the substrate assembly 10. The distance from the upper surface of the substrate assembly 10 is inclined, whereby the thickness of the adhesive layer 13 disposed in the second region R2 can be retracted. The first distance measuring unit 23a and the substrate combination measured by the step (S50) of measuring the distance between the distance measuring unit 23 and the substrate assembly 10 after the first laser scanning can be performed by the degree of inclination of the upper surface of the substrate assembly 10. The difference between the distance da' between 10 and the distance db' between the second distance measuring portion 23b and the substrate assembly 10 is remitted. The step (S60) of adjusting the focus position of the laser can rotate the table 21 so that the adhesive layer 13 becomes horizontal. While rotating the table 21, the focus f2 of the second laser beam L2 can be placed in the adhesive layer 13 by moving the table 21 up and down or moving the laser output unit 22 up and down. According to still another embodiment of the present invention, the focus of the laser L2 can be controlled not to be separated from the adhesive layer 13, whereby the first substrate 11 and the second substrate 12 can be smoothly separated, and the second substrate 12 can be prevented from being laser-induced. damage. The other description of the substrate peeling method according to still another embodiment of the present invention is substantially the same as the description of the substrate peeling method described with reference to FIGS. 1 to 15, and therefore the description thereof will be omitted.
以上,雖參照附圖說明了本發明的實施例,但是,本發明所屬領域的技術人員可以理解在不改變本發明的技術思想或必要特徵的狀態下可以實施其他具體形態。因此,在所有方面以上所述的實施例只是舉例說明而已,並不限定本發明。The embodiments of the present invention have been described above with reference to the drawings, but those skilled in the art can understand that other specific embodiments can be implemented without changing the technical idea or essential features of the present invention. Therefore, the above described embodiments are merely illustrative and are not intended to limit the invention.
S10~S80...步驟S10~S80. . . step
Claims (20)
形成一基板結合體的步驟,該基板結合體包括一第一基板以及與該第一基板結合的一軟性第二基板,區分為一第一區域及一第二區域;
將該基板結合體安裝在一工作臺上的步驟;
向該第一區域照射雷射的一第一雷射掃描步驟;
測定配置在該基板結合體上的一距離測定部和該基板結合體之間的距離的步驟;
對應該距離測定部和該基板結合體之間的距離改變該雷射的焦點位置的步驟;以及向該第二區域照射該雷射的一第二雷射掃描步驟。A substrate stripping method comprising:
Forming a substrate assembly, the substrate assembly includes a first substrate and a flexible second substrate coupled to the first substrate, and is divided into a first region and a second region;
a step of mounting the substrate assembly on a workbench;
a first laser scanning step of illuminating the first region with a laser;
Determining a distance between a distance measuring portion and the substrate assembly disposed on the substrate assembly;
a step of changing a focus position of the laser corresponding to a distance between the distance measuring portion and the substrate assembly; and a second laser scanning step of irradiating the second region with the laser.
一雷射輸出部,向包含一第一基板及結合於該第一基板的一軟性第二基板的一基板結合體照射雷射;
一工作臺,在上部安裝該基板結合體;
一距離測定部,配置在該基板結合體上,用於測定與該基板結合體的距離;以及一控制部,對應該距離測定部和該基板結合體之間的距離改變該雷射的焦點位置。A substrate stripping device comprising:
a laser output portion irradiates a laser to a substrate assembly including a first substrate and a soft second substrate bonded to the first substrate;
a workbench, the substrate assembly is mounted on the upper portion;
a distance measuring unit disposed on the substrate assembly for measuring a distance from the substrate assembly; and a control unit that changes a focus position of the laser corresponding to a distance between the distance measuring unit and the substrate assembly .
該雷射輸出部向該第一區域照射該雷射,
向該第一區域照射該雷射後,該控制部對應該距離測定部和該基板結合體之間的距離,改變在該基板結合體上的雷射的焦點位置,改變該雷射的焦點位置之後,該雷射輸出部向該第二區域照射該雷射。The substrate stripping device of claim 10, wherein the substrate assembly is divided into a first region and a second region.
The laser output unit illuminates the first area with the laser.
After the laser is irradiated to the first region, the control portion changes the focal position of the laser on the substrate assembly corresponding to the distance between the distance measuring portion and the substrate assembly, and changes the focus position of the laser. Thereafter, the laser output unit illuminates the laser toward the second region.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130050110A KR102065370B1 (en) | 2013-05-03 | 2013-05-03 | Method of peeling substrate and substrate peeling device |
??10-2013-0050110 | 2013-05-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201444015A true TW201444015A (en) | 2014-11-16 |
TWI616974B TWI616974B (en) | 2018-03-01 |
Family
ID=51801700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102136637A TWI616974B (en) | 2013-05-03 | 2013-10-09 | Method of peeling substrate and substrate peeling device |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102065370B1 (en) |
CN (1) | CN104128705B (en) |
TW (1) | TWI616974B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101918538B1 (en) * | 2016-03-03 | 2018-11-15 | 에이피시스템 주식회사 | Detecting method of substrate inverting for Laser lift off process |
KR102649238B1 (en) * | 2016-10-26 | 2024-03-21 | 삼성디스플레이 주식회사 | Display panel, stacked substrate including the same, and method of manufacturing the display panel |
KR20180063421A (en) * | 2016-12-01 | 2018-06-12 | 주식회사 탑 엔지니어링 | Scribing apparatus |
KR20180077385A (en) * | 2016-12-28 | 2018-07-09 | 주식회사 비아트론 | Heat-Treatment Apparatus and Method of Substrate Using Polygon Scanner |
CN108333818B (en) * | 2018-01-27 | 2020-12-25 | 武汉华星光电技术有限公司 | Display panel and method for manufacturing the same |
CN112388151B (en) * | 2019-08-16 | 2022-08-02 | 阳程科技股份有限公司 | Method for pre-separating flexible display and additional circuit board |
CN113257979A (en) * | 2021-05-12 | 2021-08-13 | 华南理工大学 | Chip transfer substrate, chip transfer apparatus and chip transfer method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2707189B2 (en) * | 1992-08-26 | 1998-01-28 | 株式会社日立製作所 | Method and apparatus for removing electronic component from substrate |
JP4659300B2 (en) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | Laser processing method and semiconductor chip manufacturing method |
JP2003066858A (en) * | 2001-08-23 | 2003-03-05 | Sony Corp | Method of manufacturing thin-film device substrate |
JP2004188422A (en) * | 2002-12-06 | 2004-07-08 | Hamamatsu Photonics Kk | Device and method for machining laser beam |
JP4670533B2 (en) * | 2005-08-04 | 2011-04-13 | セイコーエプソン株式会社 | Nozzle plate manufacturing method and droplet discharge head manufacturing method |
JP2008012542A (en) * | 2006-07-03 | 2008-01-24 | Hamamatsu Photonics Kk | Laser beam machining method |
KR101458901B1 (en) * | 2008-04-29 | 2014-11-10 | 삼성디스플레이 주식회사 | Method of manufacturing flexible display device |
EP2479151B1 (en) * | 2009-09-18 | 2020-10-28 | Nippon Electric Glass Co., Ltd. | Method for producing glass film, method for processing glass film, and glass film laminate |
JP5611751B2 (en) * | 2010-09-30 | 2014-10-22 | 芝浦メカトロニクス株式会社 | Support substrate, substrate laminate, bonding apparatus, peeling apparatus, and substrate manufacturing method |
KR101774278B1 (en) * | 2011-07-18 | 2017-09-04 | 엘지디스플레이 주식회사 | Manufacturing method of flexible display device |
-
2013
- 2013-05-03 KR KR1020130050110A patent/KR102065370B1/en active IP Right Grant
- 2013-08-26 CN CN201310376495.3A patent/CN104128705B/en active Active
- 2013-10-09 TW TW102136637A patent/TWI616974B/en active
Also Published As
Publication number | Publication date |
---|---|
KR102065370B1 (en) | 2020-02-12 |
CN104128705A (en) | 2014-11-05 |
KR20140131140A (en) | 2014-11-12 |
CN104128705B (en) | 2018-03-27 |
TWI616974B (en) | 2018-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201444015A (en) | Method of peeling substrate and substrate peeling device | |
CN100470767C (en) | Device and method for joining substrates | |
US20170120571A1 (en) | Substrate peeling device, method for peeling substrate, and method for fabricating flexible display device | |
KR20190003346A (en) | Laser machining apparatus and laser machining method | |
EP2853807A2 (en) | Light guide panel, back light assembly and display apparatus each having the light guide panel | |
EP2161616A8 (en) | Double-layer liquid crystal lens and method for manufacturing the same | |
JP2019021808A (en) | Wafer processing method | |
TWI553376B (en) | Bonded member manufacturing apparatus and method of manufacturing bonded member | |
KR102209634B1 (en) | Cementing device, cementing method, system for producing optical display device, and method for producing optical display device | |
TW201600281A (en) | Cutting apparatus for optical film laminate and method for cutting optical film laminate using the cutting apparatus | |
US20140230990A1 (en) | Attachment of a cap to a substrate-based device with in situ monitoring of bond quality | |
TW200736593A (en) | Apparatus for measuring reflectance, method for measuring reflectance and method for manufacturing display panel | |
JP5416143B2 (en) | Method for predicting conformability of sheet material to reference plane | |
US9717143B2 (en) | Method for fabricating flexible substrate and flexible substrate prefabricated component | |
KR20200047259A (en) | Method and device for inspecting defect of optical film | |
TWI818182B (en) | Processing methods and resin bonding machines | |
TW201347635A (en) | Substrate manufacturing method and multi-layer stack structure | |
JP2017034123A (en) | Adhesion degree detection method | |
KR20160100956A (en) | Wafer alignment with restricted visual access | |
KR20150101054A (en) | Removal apparatus for release film of a polarizing plate and removal method for the same | |
KR102209637B1 (en) | Bonding device, bonding method, production system for optical display device, and production method for optical display device | |
KR101645419B1 (en) | Cutting device and method for optical clear adhensive film | |
JP2013072789A (en) | Internal state observation method | |
CN111341716A (en) | Flexible display substrate stripping device and flexible display substrate stripping method | |
JP6630527B2 (en) | Inspection method of adhesive film having through hole |