TW201440908A - Etching machine and method for cleaning crystal of the same - Google Patents
Etching machine and method for cleaning crystal of the same Download PDFInfo
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- TW201440908A TW201440908A TW102119612A TW102119612A TW201440908A TW 201440908 A TW201440908 A TW 201440908A TW 102119612 A TW102119612 A TW 102119612A TW 102119612 A TW102119612 A TW 102119612A TW 201440908 A TW201440908 A TW 201440908A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
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Abstract
Description
本發明涉及一種蝕刻機台,特別是一種具有清洗功能,能夠去除結晶的蝕刻機台。 The present invention relates to an etching machine, and more particularly to an etching machine having a cleaning function capable of removing crystals.
現有的蝕刻機台如第1圖所示,包括蝕刻室1、位於蝕刻室1內的藥液槽2、排水管路3、補水管路4及壓縮空氣管路5。藥液槽2內盛放用於對基板10進行處理的藥液,藥液槽2上設有用於輸送基板10的傳送裝置6,在輸送基板10的同時,使基板10與藥液槽2內的藥液接觸。最後,基板10被傳送裝置6輸送至蝕刻室1的出口,由此離開,進入下一工序。其中,補水管路4一端與濃度控制器9連接,另一端與排水管路3連通,當閥門7打開時,來自濃度控制器9的水經由補水管路4進入藥液槽2,以調節藥液的濃度。另外,為了避免基板10攜帶藥液離開蝕刻室1,造成藥液的浪費,在蝕刻室1的出口處還連接有壓縮空氣管路5,當閥門8打開時,壓縮空氣管路5向蝕刻室1 的出口處噴出高壓空氣,形成氣簾A,以將附著在基板10表面的藥液沖下。 As shown in FIG. 1, the conventional etching machine includes an etching chamber 1, a chemical tank 2 located in the etching chamber 1, a drain line 3, a water supply line 4, and a compressed air line 5. The chemical solution tank 2 contains a chemical solution for processing the substrate 10, and the chemical liquid tank 2 is provided with a transport device 6 for transporting the substrate 10. The substrate 10 and the liquid chemical tank 2 are simultaneously transported while the substrate 10 is transported. The liquid is in contact. Finally, the substrate 10 is transported by the transport device 6 to the exit of the etching chamber 1, thereby leaving, and proceeds to the next process. Wherein, one end of the water supply pipeline 4 is connected with the concentration controller 9, and the other end is connected with the drain pipeline 3. When the valve 7 is opened, the water from the concentration controller 9 enters the liquid tank 2 via the water supply pipeline 4 to regulate the medicine. The concentration of the liquid. In addition, in order to prevent the substrate 10 from carrying the chemical solution away from the etching chamber 1, causing waste of the chemical solution, a compressed air line 5 is also connected at the outlet of the etching chamber 1, and when the valve 8 is opened, the compressed air line 5 is directed to the etching chamber. 1 The outlet is sprayed with high-pressure air to form an air curtain A to flush the liquid medicine attached to the surface of the substrate 10.
現有的蝕刻機台存在藥液結晶的問題:特別是在蝕刻室1的出口,即氣簾A處,結晶問題尤為嚴重。現有的處理結晶的方式為:使蝕刻機台停機,進行手動清潔。但是此方式不僅影響工期,而且操作複雜,效率低。 The existing etching machine has a problem of crystallization of the chemical liquid: particularly at the outlet of the etching chamber 1, that is, at the air curtain A, the problem of crystallization is particularly serious. The existing way of processing crystallization is to stop the etching machine and perform manual cleaning. However, this method not only affects the construction period, but also has complicated operation and low efficiency.
本發明的目的在於,提供一種蝕刻機台,具有清洗功能,能夠方便的去除藥液的結晶。 It is an object of the present invention to provide an etching machine having a cleaning function and capable of easily removing crystals of a chemical liquid.
本發明的目的還在於提供一種用於清洗該蝕刻機台的結晶的方法,以方便的去除蝕刻機台內藥液的結晶。 It is still another object of the present invention to provide a method for cleaning crystals of the etching machine to facilitate removal of crystals of the chemical liquid in the etching machine.
本發明提供一種蝕刻機台,其包括:蝕刻室,其包括入口及出口;藥液槽,其位於蝕刻室內,藥液槽內容納藥液;以及濃度控制器,其包括補水管路。其中,基板從蝕刻室的入口進入,被輸送至蝕刻室的出口,基板在蝕刻室內的輸送過程中與藥液槽內的藥液接觸,補水管路能夠經由出口向藥液槽內注水,來自補水管路的水能夠調節藥液槽內藥液的濃度,並能夠清洗出口處的藥液結晶。 The present invention provides an etching machine comprising: an etching chamber including an inlet and an outlet; a chemical liquid tank located in the etching chamber, the chemical tank containing the chemical liquid; and a concentration controller including a water supply line. Wherein, the substrate enters from the inlet of the etching chamber and is transported to the outlet of the etching chamber. The substrate is in contact with the liquid medicine in the liquid medicine tank during the conveying process in the etching chamber, and the water filling pipeline can inject water into the liquid medicine tank through the outlet. The water in the hydration line can adjust the concentration of the liquid in the liquid tank, and can clean the liquid crystal at the outlet.
本發明提供一種用於清洗蝕刻機台的結晶的方法,其中,該方法在上述的蝕刻機台內進行,該方法包括:該補水管路經由該出口向該藥液槽內注水的同時清洗該出口處的藥液結晶。 The present invention provides a method for cleaning crystallization of an etching machine, wherein the method is carried out in the etching machine described above, the method comprising: cleaning the water supply pipe by injecting water into the liquid chemical tank through the outlet The liquid at the outlet is crystallized.
本發明通過對濃度控制器的補水管路的巧妙變 更,使其不僅僅可達到對藥液補水,以控制濃度的功用,並且在補水的同時,可針對機台易結晶處,例如形成氣簾的出口處,進行清洗。本發明有效利用濃度控制器的補水機制,增加易結晶處的清洗時間與次數,可有效減少結晶的發生,提高產品合格率,並且,不必如現有技術那樣必須停工進行清洗,而是與補水同時進行,因此,提高生產效率,簡化清洗操作。 The invention adopts the subtle change of the water supply pipeline of the concentration controller Moreover, it can not only achieve the hydration of the liquid medicine, but also control the concentration, and at the same time as hydrating, it can be cleaned at the outlet where the machine is easy to crystallize, for example, at the exit of the air curtain. The invention effectively utilizes the water replenishing mechanism of the concentration controller, increases the cleaning time and the number of times of the crystallization, can effectively reduce the occurrence of crystallization, improve the product qualification rate, and does not have to be shut down for cleaning as in the prior art, but simultaneously with the hydration This is done, therefore, to increase production efficiency and simplify cleaning operations.
1、20‧‧‧蝕刻室 1, 20‧‧ ‧ etching chamber
2、30‧‧‧藥液槽 2, 30‧‧ ‧ liquid tank
3‧‧‧排水管路 3‧‧‧Drainage line
6、40‧‧‧傳送裝置 6, 40‧‧‧ conveyor
5、50‧‧‧壓縮空氣管路 5, 50‧‧‧Compressed air line
4、60‧‧‧補水管路 4, 60‧‧‧ water supply pipeline
7~8‧‧‧閥門 7~8‧‧‧ valve
9、90‧‧‧濃度控制器 9, 90‧‧‧ concentration controller
10‧‧‧基板 10‧‧‧Substrate
21‧‧‧入口 21‧‧‧ entrance
22‧‧‧出口 22‧‧‧Export
70‧‧‧基板檢測感測器 70‧‧‧Substrate detection sensor
80‧‧‧閥門控制裝置 80‧‧‧ valve control device
A‧‧‧氣簾 A‧‧‧Air curtain
V1‧‧‧第一閥門 V1‧‧‧ first valve
V2‧‧‧第二閥門 V2‧‧‧Second valve
第1圖是現有的蝕刻機台的示意圖。 Figure 1 is a schematic view of a conventional etching machine.
第2圖是本發明一實施例的蝕刻機台的示意圖。 Fig. 2 is a schematic view of an etching machine according to an embodiment of the present invention.
第3圖是本發明又一實施例的蝕刻機台的示意圖。 Figure 3 is a schematic view of an etching machine according to still another embodiment of the present invention.
第4圖是本發明再一實施例的蝕刻機台的示意圖。 Fig. 4 is a schematic view showing an etching machine according to still another embodiment of the present invention.
以下結合附圖對本發明的具體實施方式進行詳細說明。應當理解的是,此處所描述的具體實施方式僅用於說明和解釋本發明,並不用於限制本發明。 The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative and not restrictive.
如第2圖所示,本實施例的蝕刻機台包括:蝕刻室20、藥液槽30、傳送裝置40、壓縮空氣管路50及濃度控制器90。蝕刻室20包括入口21及出口22;藥液槽30位於該蝕刻室20內,藥液槽30內容納藥液;壓縮空氣管路50通向該出口22處,並能夠在出口22處噴出高壓空氣, 形成氣簾A;濃度控制器90包括補水管路60,廠務端向補水管路60供給具有一定壓力(例如為0.25Mpa)的純水。其中,基板10從該蝕刻室20的入口21進入,基板10在該蝕刻室20內的輸送過程中與該藥液槽30內的藥液接觸,接著被傳送裝置40輸送至該蝕刻室20的出口22,並受到出口22處的氣簾A的沖刷,使附著在基板10表面的藥液沖下。該補水管路60能夠經由該出口22向該藥液槽30內注水,來自該補水管路60的水不僅能夠與藥液混合,調節藥液的濃度,還能夠同時清洗該出口22處的藥液結晶。 As shown in FIG. 2, the etching machine of the present embodiment includes an etching chamber 20, a chemical tank 30, a conveying device 40, a compressed air line 50, and a concentration controller 90. The etching chamber 20 includes an inlet 21 and an outlet 22; the chemical tank 30 is located in the etching chamber 20, and the chemical tank 30 contains the liquid medicine; the compressed air line 50 leads to the outlet 22, and can discharge the high pressure at the outlet 22. air, The air curtain A is formed; the concentration controller 90 includes a water supply line 60, and the factory side supplies the purified water line 60 with pure water having a certain pressure (for example, 0.25 MPa). The substrate 10 enters from the inlet 21 of the etching chamber 20, and the substrate 10 contacts the liquid medicine in the liquid medicine tank 30 during the transportation in the etching chamber 20, and is then transported to the etching chamber 20 by the conveying device 40. The outlet 22 is flushed by the air curtain A at the outlet 22, and the chemical liquid adhering to the surface of the substrate 10 is washed down. The water supply line 60 can inject water into the chemical solution tank 30 through the outlet 22, and the water from the water supply line 60 can not only mix with the chemical liquid, but also adjust the concentration of the chemical liquid, and simultaneously wash the medicine at the outlet 22 Liquid crystallizes.
該蝕刻機台具有工作模式和補水清洗模式,該工作模式中,該蝕刻室20內有基板10通過該出口22,該補水清洗模式中,該蝕刻室20內無基板10通過該出口22。也就是說,當蝕刻室20內無基板10通過該出口22時,可進行補水、清洗操作。 The etching machine has an operating mode and a hydration cleaning mode in which the substrate 10 passes through the outlet 22 in the etching chamber 20. In the hydration cleaning mode, no substrate 10 passes through the outlet 22 in the etching chamber 20. That is, when no substrate 10 passes through the outlet 22 in the etching chamber 20, a water replenishing and cleaning operation can be performed.
本實施例中,補水管路60由第一閥門V1控制,該壓縮空氣管路50由第二閥門V2控制。該蝕刻機台還包括基板檢測感測器70和閥門控制裝置80,該基板檢測感測器70用以判斷有無基板10通過該出口22,該閥門控制裝置80與該基板檢測感測器70連接,通過該判斷結果控制該第一閥門V1的開關。 In the present embodiment, the water supply line 60 is controlled by a first valve V1, which is controlled by a second valve V2. The etching machine further includes a substrate detecting sensor 70 and a valve control device 80 for determining whether the substrate 10 passes through the outlet 22, and the valve control device 80 is connected to the substrate detecting sensor 70. The switch of the first valve V1 is controlled by the result of the determination.
在工作模式下,第二閥門V2始終打開。若機台內的基板檢測感測器70判斷無基板通過出口22,則閥門控制裝置80控制第二閥門V2關閉,第一閥門V1開啟,啟動補水清洗模式。當然,在補水清洗模式下,也可使第二閥 門V2打開,即,在工作模式和補水清洗模式下,第二閥門V2均為打開狀態,壓縮空氣管路50始終在出口22處形成氣簾A。 In the operating mode, the second valve V2 is always open. If the substrate detecting sensor 70 in the machine determines that no substrate passes through the outlet 22, the valve control device 80 controls the second valve V2 to close, and the first valve V1 is opened to activate the hydration cleaning mode. Of course, in the hydration cleaning mode, the second valve can also be used. The door V2 is opened, that is, in the operating mode and the hydration cleaning mode, the second valve V2 is open, and the compressed air line 50 always forms the air curtain A at the outlet 22.
第3圖繪示出了本發明的又一實施例的蝕刻機台 的示意圖,其與第2圖中實施例的區別在於,該補水管路60的出水口與壓縮空氣管路50連接,來自該補水管路60的水與來自該壓縮空氣管路50的高壓空氣混合並排向該出口22處。優選為,壓縮空氣管路50位於該補水管路60的上游,來自該壓縮空氣管路50的高壓空氣能夠推動來自該補水管路50的水排向該出口22處,從而提高進水速度,提升清洗效果。並且,在第一閥門V1關閉的情況下,若補水管路60裏存留液體,壓縮空氣管路50內高壓氣體可帶著存留液體進入機台,進行清洗。 Figure 3 illustrates an etching machine of still another embodiment of the present invention. The schematic diagram differs from the embodiment in FIG. 2 in that the water outlet of the water supply line 60 is connected to the compressed air line 50, the water from the water supply line 60 and the high pressure air from the compressed air line 50. Mix and line up to the exit 22. Preferably, the compressed air line 50 is located upstream of the water supply line 60, and the high pressure air from the compressed air line 50 can push the water from the water supply line 50 to the outlet 22, thereby increasing the water inlet speed. Improve the cleaning effect. Further, in the case where the first valve V1 is closed, if liquid remains in the water supply line 60, the high-pressure gas in the compressed air line 50 can enter the machine with the retained liquid to perform cleaning.
第4圖繪示出了本發明的再一實施例的蝕刻機台 的示意圖,其與第3圖中實施例的區別在於,來自該壓縮空氣管路50的高壓空氣從上向下供應,再與下方的補水管路60連接,由於壓縮空氣管路50與補水管路60存在高度差,從而可避免來自補水管路60的水回流至壓縮空氣管路50。 4 is a view showing an etching machine according to still another embodiment of the present invention. The schematic diagram differs from the embodiment in FIG. 3 in that the high-pressure air from the compressed air line 50 is supplied from the top to the bottom, and is connected to the lower water supply line 60, due to the compressed air line 50 and the water supply pipe. The road 60 has a height difference so that water from the makeup water line 60 can be prevented from flowing back to the compressed air line 50.
本發明通過對濃度控制器的補水管路的巧妙變 更,使其不僅僅可達到對藥液補水,以控制濃度的功用,並補水的同時,可針對機台易結晶處,例如形成氣簾的出口處,進行清洗。本發明有效利用濃度控制器的補水機制,增加易結晶處的清洗時間與次數,可有效減少結晶的發 生,提高產品合格率,並且,不必如現有技術那樣必須停工進行清洗,而是與補水同時進行,因此,提高生產效率,簡化清洗操作。 The invention adopts the subtle change of the water supply pipeline of the concentration controller In addition, it can not only achieve the hydration of the liquid, to control the concentration of the function, and hydration, at the same time, the machine can be easily crystallized, for example, the outlet of the air curtain is cleaned. The invention effectively utilizes the water replenishing mechanism of the concentration controller, increases the cleaning time and the number of times of easy crystallization, and can effectively reduce the crystallization The production rate is improved, and it is not necessary to stop the cleaning as in the prior art, but at the same time as the hydration, thereby improving the production efficiency and simplifying the cleaning operation.
雖然已參照幾個典型實施例描述了本發明,但應當理解,所用的術語是說明和示例性、而非限制性的術語。由於本發明能夠以多種形式具體實施而不脫離發明的精神或實質,所以應當理解,上述實施例不限於任何前述的細節,而應在隨附之申請專利範圍所限定的精神和範圍內廣泛地解釋,因此落入申請專利範圍或其等效範圍內的全部變化和改型都應為隨附之申請專利範圍所涵蓋。 While the invention has been described with respect to the exemplary embodiments illustrated embodiments The present invention may be embodied in a variety of forms without departing from the spirit or scope of the invention. It is to be understood that the invention is not limited to the details. It is to be understood that all changes and modifications that fall within the scope of the patent application or its equivalents should be covered by the accompanying claims.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧蝕刻室 20‧‧ ‧ etching chamber
21‧‧‧入口 21‧‧‧ entrance
22‧‧‧出口 22‧‧‧Export
30‧‧‧藥液槽 30‧‧‧ drug tank
40‧‧‧傳送裝置 40‧‧‧Transfer
50‧‧‧壓縮空氣管路 50‧‧‧Compressed air line
60‧‧‧補水管路 60‧‧‧Hydration pipeline
90‧‧‧濃度控制器 90‧‧‧Concentration controller
A‧‧‧氣簾 A‧‧‧Air curtain
V1‧‧‧第一閥門 V1‧‧‧ first valve
V2‧‧‧第二閥門 V2‧‧‧Second valve
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CN108212883A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | For the device and method of the shutter of the buffer cell of clean wet-method etching machine |
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TWI699843B (en) * | 2019-08-13 | 2020-07-21 | 台灣積體電路製造股份有限公司 | Process system including withdrawing device and method of monitoring the system |
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CN104124147A (en) | 2014-10-29 |
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