TW201439005A - Zirconium tungstate - Google Patents

Zirconium tungstate Download PDF

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TW201439005A
TW201439005A TW103101250A TW103101250A TW201439005A TW 201439005 A TW201439005 A TW 201439005A TW 103101250 A TW103101250 A TW 103101250A TW 103101250 A TW103101250 A TW 103101250A TW 201439005 A TW201439005 A TW 201439005A
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zirconium tungstate
peak
diffraction
intensity
zirconium
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TWI603920B (en
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Hiroshi Takamura
Satoyasu Narita
Ryo Suzuki
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Jx Nippon Mining & Metals Corp
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Abstract

The invention of the present application provides zirconium tungstate which is characterized in that the intensity of a peak appearing in a range of 2[theta] = 23.5 to 23.9 not ranges from 92 to 115% when the intensity of a diffraction peak appearing in a range from 2[theta] = 21.4 to 21.8 not is 100% in X-ray diffraction. Conventionally, there is a problem that the synthesis of a crystal of zirconium tungstate takes a long time, and therefore the application of zirconium tungstate to products has not been advanced. It is reported that zirconium tungstate can be produced using a platinum crucible in a laboratory. However, this production technique is not suitable for the mass production of zirconium tungstate. There is also a problem that zirconium tungstate volatilizes easily (the weight of zirconium tungstate usually is reduced by 0.3% at 950 not C within 2 hours) and therefore it is difficult to control the chemical composition of zirconium tungstate. The invention of the present application addresses the problem of controlling the chemical composition of zirconium tungstate and improving the quality of zirconium tungstate to improve the yield of zirconium tungstate, and also addresses the problem of performing the synthesis of a crystal of zirconium tungstate within an extremely short time to reduce the cost required for the production of zirconium tungstate.

Description

鎢酸鋯 Zirconium tungstate

本發明係關於一種調整玻璃等膨脹係數時使用之具有負膨脹係數(隨著溫度上升體積變小)之材料。 The present invention relates to a material having a negative expansion coefficient (the volume becomes smaller as the temperature rises) used when adjusting the expansion coefficient of glass.

近年來,日益要求高精度化之精密機械零件、光學零件、電子材料封裝必須避免產生由外部環境引起之伴隨溫度變化之變形的對策。又,視感測器類不同,為了於緊急時可確實地動作,避免由此種應力導致元件之劣化而要求成為長壽命的材料設計。 In recent years, precision mechanical parts, optical parts, and electronic material packages, which are increasingly required to be highly precise, must be protected against the occurrence of deformation accompanying temperature changes caused by the external environment. Further, depending on the type of sensor, in order to operate reliably in an emergency, it is required to avoid deterioration of the element due to such stress, and it is required to have a long-life material design.

膨脹變形因於不同材料之接合界面中體積變化量不同而產生,有時成為剝離或破裂之重要原因。 The expansion deformation is caused by the difference in the volume change in the joint interface of different materials, and sometimes becomes an important cause of peeling or cracking.

隨著溫度上升,體積收縮之負膨脹材料與具有大部分物質共同表現出正熱膨脹之材料複合化,藉此可控制該複合素材之熱膨脹率,因此正受到關注。尤其是鎢酸鋯(ZrW2O8)具有熱收縮係數大,於廣泛溫度範圍內同樣地表現出各向同性之負熱膨脹的特點。進而,近來環境限制基準變得嚴格,由於其係不使用鉛之非鉛系材料,故而成為非常受期待之材料。 As the temperature rises, the volume-contracted negative expansion material is combined with a material having a large portion of the material to exhibit positive thermal expansion, whereby the thermal expansion rate of the composite material can be controlled, and thus attention is being paid. In particular, zirconium tungstate (ZrW 2 O 8 ) has a large heat shrinkage coefficient and exhibits an isotropic negative thermal expansion in a wide temperature range. Further, the environmental limit has recently become strict, and since it is a non-lead-based material that does not use lead, it is a highly anticipated material.

然而,ZrW2O8於1960年代報告有負熱膨脹後,進行了各種研究,但鈣鈦礦顯示高結晶比率且可量產之製法尚未確立。 However, since ZrW 2 O 8 reported negative thermal expansion in the 1960s, various studies have been conducted, but a method in which perovskites exhibit a high crystallization ratio and mass production has not been established.

於習知技術中,下述專利文獻1中,提出可穩定地製作大型且純度高之單相的鎢酸鋯(ZrW2O8)之主旨之方法。文獻1之方法中,首先 使用液相法(溶膠-凝膠法),製作目標物質之元素成為正確之化學計量比的非晶質粉末,繼而,對其利用放電電漿燒結等方法進行通電加壓燒結。較佳為藉由對上述非晶質粉末於常壓以溫度500℃至700℃進行燒成而預先製作晶種,並對其利用放電電漿燒結等方法進行通電加壓燒結的方法。 In the prior art, Patent Document 1 listed below proposes a method for stably producing a large-sized and high-purity single-phase zirconium tungstate (ZrW 2 O 8 ). In the method of Document 1, first, a liquid phase method (sol-gel method) is used to prepare an amorphous powder in which the element of the target substance becomes a correct stoichiometric ratio, and then, it is energized by means of discharge plasma sintering or the like. Pressure sintering. It is preferable to prepare a seed crystal in advance by baking the amorphous powder at a normal temperature at a temperature of 500 ° C to 700 ° C, and subjecting the amorphous powder to electric current pressure sintering by a method such as discharge plasma sintering.

並且,提出藉由如上所述之方式,可獲得具有更優異之結晶性之單相的鎢酸鋯(ZrW2O8)。然而,即便為該方法,於使非晶質粉末進行液相反應之步驟中亦需要長時間,且成為填充至石墨製模具(模具直徑20mm)並進行加壓之批次式的處理,故而就真正意義上之量產化(每月數噸以上之生產線)之方面而言不合適。 Further, it is proposed that a single-phase zirconium tungstate (ZrW 2 O 8 ) having more excellent crystallinity can be obtained by the above method. However, even in this method, it takes a long time to carry out the liquid phase reaction of the amorphous powder, and it is filled into a graphite mold (mold diameter 20 mm). ) and the batch processing of pressurization is carried out, so it is not suitable in terms of the true mass production (manufacturing line of several tons or more per month).

作為其他之習知技術,於專利文獻2中提出以氧化物(WO3與ZrO2)作為起始原料,將該原料設為二極化之粒徑分佈,並將該原料粉放入至所需之模具中進行燒結之製造方法。然而,專利文獻2揭示之氧化物粉末的燒結法中,有必需長時間之混合與長時間之燒結,事實上無法短時間製造而耗費製造成本之問題。 As another conventional technique, in Patent Document 2, an oxide (WO 3 and ZrO 2 ) is used as a starting material, and the raw material is set to a bipolarized particle size distribution, and the raw material powder is placed in the same manner. A manufacturing method for sintering in a mold to be used. However, in the sintering method of the oxide powder disclosed in Patent Document 2, it is necessary to mix for a long period of time and to sinter for a long period of time, and in fact, it is impossible to manufacture in a short time and cost a manufacturing cost.

又,專利文獻3中,提出以氧氯化鋯與不含Na離子之鎢酸鹽作為起始物質,使兩種金屬元素經由氧而進行化學鍵結之化合物(A4+M2 6+O8)於H2O中進行10小時水解,並添加HCl進行48小時回流,過濾固形物,並熟化7天後,於常壓以600℃燒成10小時而製作鎢酸鋯(ZrW2O8)。 Further, in Patent Document 3, a compound in which two metal elements are chemically bonded via oxygen (A 4+ M 2 6+ O 8 ) is proposed using zirconium oxychloride and a tungstate containing no Na ion as a starting material. The mixture was hydrolyzed in H 2 O for 10 hours, refluxed with HCl for 48 hours, and the solid matter was filtered, and after aging for 7 days, it was baked at 600 ° C for 10 hours under normal pressure to prepare zirconium tungstate (ZrW 2 O 8 ). .

然而,此種對利用液相法製備之粉末原料進行常壓燒結之方法中,有鎢成分不穩定,無法進行穩定之製造,燒成需要長時間,因此量產性差之問題。 However, in the method of performing normal pressure sintering of the powder raw material prepared by the liquid phase method, the tungsten component is unstable, stable production cannot be performed, and the firing takes a long time, so that the mass productivity is poor.

專利文獻1:日本特開2006-44953號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-44953

專利文獻2:日本特開2003-342075號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2003-342075

專利文獻3:美國專利第6183713號公報 Patent Document 3: U.S. Patent No. 6183713

如上述習知般,有結晶化之合成耗費長時間的問題,目前為止未進展到製品之應用。於實驗室級別雖有使用鉑坩堝進行製作之報告,但不適於量產化。又,氧化鎢有容易揮發(於950℃-2h重量減少0.3%)、難以進行組成之控制的問題。本案發明之課題在於減少組成之變動,提高品質與產率,於極短時間內進行向結晶化之合成,從而降低製造成本。 As described above, there is a problem that the synthesis of crystallization takes a long time, and the application of the product has not progressed so far. Although there are reports of production using platinum rhodium at the laboratory level, it is not suitable for mass production. Further, the tungsten oxide has a problem that it is easily volatilized (the weight is reduced by 0.3% at 950 ° C to 2 h), and it is difficult to control the composition. The object of the present invention is to reduce the composition variation, improve the quality and productivity, and synthesize the crystallization into a very short time, thereby reducing the manufacturing cost.

為了解決上述課題,提供以下之發明。 In order to solve the above problems, the following inventions are provided.

1)一種鎢酸鋯,其將X射線繞射中位於2 θ=21.4~21.8°之繞射波峰的強度設為100%之情形時,位於2 θ=23.5~23.9°之繞射波峰強度為92~115%。 1) A zirconium tungstate having a diffraction peak intensity at 2 θ = 23.5 to 23.9° when the intensity of a diffraction peak at 2 θ = 21.4 to 21.8° in the X-ray diffraction is set to 100% 92~115%.

2)如上述1)記載之鎢酸鋯,其中,位於2 θ=21.4~21.8°之繞射波峰的半峰寬度為0.05°以上且0.2°以下。 2) The zirconium tungstate according to the above 1), wherein the half-peak width of the diffraction peak at 2 θ = 21.4 to 21.8° is 0.05° or more and 0.2° or less.

3)如上述1)或2)記載之鎢酸鋯,其中,於繞射角2 θ=15~60°之範圍內,位於未登錄於JCPDS之卡片編號00-050-1868之2 θ位置之繞射波峰的強度於將位於2 θ=21.4~21.8°之波峰強度設為100%之情形時為2%以下。 3) The zirconium tungstate according to the above 1) or 2), wherein the diffraction angle is 2 θ = 15 to 60°, and is located at the 2 θ position of the card number 00-050-1868 not registered in the JCPDS. The intensity of the diffraction peak is 2% or less when the peak intensity at 2 θ = 21.4 to 21.8° is 100%.

4)一種鎢酸鋯之製造方法,其使用如下WO3粉末作為原料,該WO3粉末於2 θ=22~24°之3個繞射波峰的半峰寬度分別為0.25°以上,或2 θ=33~37°之波峰為單一波峰,或者2 θ=49°~51°或53°~57°之波峰為單一波峰。 4) A method for producing zirconium tungstate using the following WO 3 powder as a raw material, wherein the WO 3 powder has a half-peak width of 0.25° or more, or 2 θ, of three diffraction peaks of 2 θ=22 to 24°, respectively. The peak of =33~37° is a single peak, or the peak of 2θ=49°~51° or 53°~57° is a single peak.

5)如上述4)記載之鎢酸鋯之製造方法,其中,於將上述WO3粉末與ZrO2粉末充分地混合後,於1190℃以上保持30秒以上,於3分鐘內急速冷卻至200℃以下而進行製作。 (5) The method for producing zirconium tungstate according to the above 4), wherein the WO 3 powder and the ZrO 2 powder are sufficiently mixed, and then held at 1190 ° C or higher for 30 seconds or more, and rapidly cooled to 200 ° C in 3 minutes. It is produced below.

先前有結晶化之合成花費長時間的問題,目前為止未進展到製品之應用。於實驗室級別雖有使用鉑坩堝進行製作之報告,但不適於量產化。又,氧化鎢有容易揮發(於950℃-2h重量減少0.3%)、難以進行組成之控制之問題。 Previously, the synthesis of crystallization took a long time, and so far, no application has been made to the product. Although there are reports of production using platinum rhodium at the laboratory level, it is not suitable for mass production. Further, the tungsten oxide is easily volatilized (the weight is reduced by 0.3% at 950 ° C to 2 h), and it is difficult to control the composition.

本案發明具有可解決該等問題,可減少組成之變動,提高品質與產率,可於相對較短時間內進行向結晶化之合成從而達成降低製造成本的明顯效果。 The invention of the present invention can solve such problems, can reduce variation in composition, improve quality and productivity, and can perform synthesis into crystallization in a relatively short period of time to achieve a significant effect of reducing manufacturing cost.

圖1係表示WO3粉末之XRD之結果的圖。 Figure 1 is a graph showing the results of XRD of WO 3 powder.

圖2係表示標準之ZrO2粉末之XRD之結果的圖。 Fig. 2 is a graph showing the results of XRD of a standard ZrO 2 powder.

圖3係表示實施例1~3之XRD之結果的圖。 Fig. 3 is a view showing the results of XRD of Examples 1 to 3.

圖4係表示實施例4~6之XRD之結果的圖。 Fig. 4 is a graph showing the results of XRD of Examples 4 to 6.

圖5係表示比較例1~2之XRD之結果的圖。 Fig. 5 is a graph showing the results of XRD of Comparative Examples 1 and 2.

圖6係表示比較例3~5之XRD之結果的圖。 Fig. 6 is a graph showing the results of XRD of Comparative Examples 3 to 5.

本案發明之鎢酸鋯的特徵在於:將X射線繞射中位於2 θ=21.4~21.8°之繞射波峰強度設為100%之情形時,位於2 θ=23.5~23.9°之波峰為92~115%。 The zirconium tungstate according to the present invention is characterized in that, when the diffraction peak intensity at 2 θ = 21.4 to 21.8° in the X-ray diffraction is set to 100%, the peak at 2 θ = 23.5 to 23.9 ° is 92~. 115%.

鎢酸鋯於X射線繞射(JCPDS:Joint Committee for Powder Diffraction Standards)中登錄有下述表1記載之4種。即,卡片編號00-013-0557、00-050-1868、01-083-1005、01-087-1528之4種。 Four types of the following Table 1 are registered in the X-ray diffraction (JCPDS: Joint Committee for Powder Diffraction Standards). That is, there are four types of card numbers 00-013-0557, 00-050-1868, 01-083-1005, and 01-087-1528.

任一者之2 θ=21.552~21.690°之繞射波峰強度均大於2 θ=23.643~ 23.789°之繞射波峰強度。 The diffraction peak intensity of either θ=21.552~21.690° is greater than 2 θ=23.643~ The diffraction peak intensity of 23.789°.

另一方面,本案發明中有後者之繞射波峰大於習知之相對強度比的特徵,先前不存在顯示該特徵之「鎢酸鋯」。 On the other hand, in the invention of the present invention, the diffraction peak of the latter is larger than the conventional relative intensity ratio, and there is no prior "zirconium tungstate" which exhibits the feature.

活用該特徵,可如下述所示有效利用鎢酸鋯。利用TMA(熱機械分析)測量本發明之鎢酸鋯的熱膨脹係數,為-9.6×10-6/K,顯示與習知同等或其以上之大之負熱膨脹特性。由於該鎢酸鋯具有非常大之負膨脹係數,故而藉由添加至成為主體之正膨脹材料中,可更有效地製作膨脹率無限接近零之零膨脹材料。 By utilizing this feature, zirconium tungstate can be effectively utilized as shown below. The thermal expansion coefficient of the zirconium tungstate of the present invention was measured by TMA (thermomechanical analysis) to be -9.6 × 10 -6 /K, showing a large negative thermal expansion property equivalent to or higher than the conventional one. Since the zirconium tungstate has a very large negative expansion coefficient, it can be more effectively produced into a zero-expansion material having an expansion ratio infinitely close to zero by being added to the positive expansion material which becomes the main body.

又,於不同之材料進行接合之元件中,可採用藉由添加負膨脹材而使兩種材料之膨脹係數接近,來抑制膨脹變形之產生的對策,於該情形時,亦可以與習知相比同等以下之添加量獲得相同效果,故而非常有效。 Further, in the element which is joined by different materials, it is possible to suppress the occurrence of the expansion deformation by adding a negative expansion material to increase the expansion coefficients of the two materials, and in this case, it is also possible to It is very effective because it achieves the same effect as the addition amount of the same amount or less.

又,於本案發明之鎢酸鋯之製造時,使與WO3之標準之結晶結構(卡片編號01-083-0950)不同,2 θ=22~24°之3個繞射波峰的半峰寬度分別為0.25°以上、或2 θ=33~37°之繞射波峰大致一體化而單一、或者2 θ=49°~51°或53°~57°之波峰成為扁平(broad)狀的結晶化不充分之狀態之WO3粉末(圖1.a)與標準之ZrO2粉末(圖2)混合粉碎,準備平均粒徑為2μm以下之加熱合成前的原料。 Further, in the production of the zirconium tungstate of the present invention, unlike the standard crystal structure of WO 3 (card number 01-083-0950), the half width of three diffraction peaks of 2 θ = 22 to 24 ° is obtained. The diffraction peaks of 0.25° or more or 2 θ=33 to 37° are substantially integrated and single, or the peaks of 2θ=49° to 51° or 53° to 57° become flat crystallization. The WO 3 powder (Fig. 1.a) in an insufficient state is mixed and pulverized with a standard ZrO 2 powder (Fig. 2), and a raw material before heating synthesis having an average particle diameter of 2 μm or less is prepared.

關於上述結晶化不充分之狀態的WO3粉末,可藉由繞射波 峰進行判定(評價)。即,繞射波峰之半峰寬度分別為0.25°以上、或2 θ=33~37°之繞射波峰大致一體化而單一、或者2 θ=49°~51°或53°~57°之波峰成為扁平狀者均可謂結晶化不充分之狀態的WO3粉末。 The WO 3 powder in a state in which the above crystallization is insufficient can be determined (evaluated) by the diffraction peak. That is, the half-peak width of the diffraction peak is 0.25° or more, or the diffraction peak of 2θ=33-37° is substantially integrated and single, or a peak of 2θ=49°~51° or 53°~57°. The flat form is a WO 3 powder in a state in which crystallization is insufficient.

並且,於在1190℃以上之高溫保持30秒以上而結晶化為鎢酸鋯(ZrW2O8)後,為了避免降溫時再次分解為WO3或ZrO2,可藉由瞬時冷卻而達成。此時之冷卻速度較理想為於3分鐘以內、更佳為1分鐘以內成為200℃以下之溫度。 Further, after being crystallized to zirconium tungstate (ZrW 2 O 8 ) at a high temperature of 1190 ° C or higher for 30 seconds or more, it can be achieved by instantaneous cooling in order to avoid decomposition into WO 3 or ZrO 2 again at the time of cooling. The cooling rate at this time is preferably within 3 minutes, more preferably within 200 minutes or less within 1 minute.

以上說明之本案發明之「鎢酸鋯」於加熱時可與習知相比在極短時間內轉換為具有鎢酸鋯之結晶結構的材料,因此可抑制蒸氣壓高之WO3的揮發,減少組成之變動,可提高品質與產率。又,該短時間之合成亦可實現量產化或製降低造成本。 The "zirconium tungstate" of the present invention described above can be converted into a material having a crystal structure of zirconium tungstate in a very short time when heated, so that the volatilization of WO 3 having a high vapor pressure can be suppressed and reduced. Changes in composition can improve quality and productivity. Moreover, the short-time synthesis can also achieve mass production or reduction.

進而,本案發明之鎢酸鋯具備以下特性:位於2 θ=21.4~21.8°之X射線繞射波峰的半峰寬度為0.05°以上且0.2°以下,且位於未登錄於JCPDS之卡片00-050-1868之2 θ位置之繞射波峰的強度於將位於2 θ=21.4~21.8°之波峰強度設為100%之情形時為2%以下。 Further, the zirconium tungstate according to the present invention has the following characteristics: the half-peak width of the X-ray diffraction peak at 2 θ = 21.4 to 21.8° is 0.05° or more and 0.2° or less, and is located in the card 00-050 not registered in JCPDS. The intensity of the diffraction peak at the θ position of -1868 is 2% or less when the peak intensity at 2 θ = 21.4 to 21.8° is 100%.

實施例 Example

對本案發明根據實施例及比較例進行說明。再者,本實施例僅為一例,並不僅限定於該例。即,包含本發明所包含之其他態樣或變形。 The invention of the present invention will be described based on examples and comparative examples. Furthermore, this embodiment is merely an example and is not limited to this example. That is, other aspects or modifications included in the present invention are included.

(實施例1-3) (Example 1-3)

將作為自APT(仲鎢酸銨)還原成金屬鎢時之中間產物之不具有完全之WO3之結晶結構的WO3粉末(圖1.a)、未因Ca或Y等添加而使氧化鋯穩定化的純ZrO2粉末以莫耳比為2:1之方式進行稱量,並利用粉碎機混合、微粉碎至平均粒徑為0.3μm。 WO 3 powder (Fig. 1.a) which does not have a complete WO 3 crystal structure as an intermediate product when reduced from APT (ammonium paratungstate) to metal tungsten, and which is not stabilized by addition of Ca or Y or the like The pure ZrO 2 powder was weighed in such a manner that the molar ratio was 2:1, and mixed by a pulverizer and finely pulverized to an average particle diameter of 0.3 μm.

將該原料放入至石英坩堝之內側貼有鉑箔的容器中,於大氣中在1200℃保持10小時(實施例1)、1小時(實施例2)、10分鐘(實施 例3)後,於保持爐溫1200℃不變之狀態下取出坩堝,迅速翻轉坩堝而將原料投入至有充分水量之20℃的水中。將於該條件下獲得之X射線繞射之結果示於圖3。 The raw material was placed in a container with a platinum foil attached to the inside of the quartz crucible, and kept at 1200 ° C for 10 hours in the atmosphere (Example 1), 1 hour (Example 2), and 10 minutes (implementation) After the example 3), the crucible was taken out while maintaining the furnace temperature at 1200 ° C, and the crucible was quickly turned over to introduce the raw material into water having a sufficient water content of 20 ° C. The results of the X-ray diffraction obtained under this condition are shown in Fig. 3.

又,位於2 θ=21.4~21.8°且將繞射波峰強度比設為100之波峰之具體的2 θ與其半峰寬度之值、及作為鎢酸鋯之另一主波峰之位於2 θ=23.5~23.9°之繞射波峰之具體的2 θ與其強度比之值、進而於2 θ=15~60°之範圍內位於未登錄於JCPDS卡片00-050-1868之2 θ位置的繞射波峰與位於2 θ=21.4~21.8之波峰比較的值係示於表2。 Further, the value of 2 θ and its half-peak width which are located at 2 θ=21.4 to 21.8° and the peak of the diffraction peak intensity ratio is set to 100, and the other main peak of zirconium tungstate is located at 2 θ=23.5. The specific 2 θ of the diffraction peak of ~23.9° and its intensity ratio, and further in the range of 2 θ=15~60°, are located at the diffraction peaks of the 2 θ position not registered in the JCPDS card 00-050-1868. The values of the peak comparisons at 2 θ = 21.4 to 21.8 are shown in Table 2.

實施例1~3均為純度高之鎢酸鋯,又,強度比為習知之JCPDS卡片中不存在之102%、106%、115%之比率。其有如下可能性:由於作為原料之WO3為不穩定之結晶結構,故而與具有完全之WO3之結晶結構的材料相比,向鎢酸鋯之結晶化前所未有地迅速進行。又,認為其係由於自1200℃之急速冷卻充分適當,可不大幅改變在高溫形成之結晶結構而降溫。進而,由於位於2 θ=21.4~21.8°之繞射波峰半峰寬度為0.05°以上且0.2°以下而較狹窄,故而亦可知結晶度高。 Examples 1 to 3 are zirconium tungstate having high purity, and the strength ratio is 102%, 106%, and 115% which are not present in the conventional JCPDS card. There is a possibility that since WO 3 as a raw material is an unstable crystal structure, it is rapidly progressed before crystallization of zirconium tungstate as compared with a material having a complete crystal structure of WO 3 . Further, it is considered that the rapid cooling from 1200 ° C is sufficient, and the temperature can be lowered without significantly changing the crystal structure formed at a high temperature. Further, since the half-peak width of the diffraction peak at 2 θ = 21.4 to 21.8° is narrower than 0.05° and not more than 0.2°, it is also known that the crystallinity is high.

(實施例4-6) (Examples 4-6)

將與實施例1-3同樣地準備之WO3與ZrO2之混合原料放入至匣缽,於連續爐(轉膛爐)在大氣中以1200℃加熱1小時後,於冷卻區域中導入至液態氮之浴進行急速冷卻。 The mixed raw materials of WO 3 and ZrO 2 prepared in the same manner as in Example 1-3 were placed in a crucible, heated in a continuous furnace (rotary oven) at 1200 ° C for 1 hour in the atmosphere, and then introduced into a cooling zone. The bath of liquid nitrogen is rapidly cooled.

實施例4-6係匣缽內位於上方之材料(實施例4)、位於匣缽之側面的材料(實施例5)、位於內部之材料(實施例6)。將X射線繞射結果示於圖4,將其波峰之分析結果示於表2。 Example 4-6 is a material located above the crucible (Example 4), a material on the side of the crucible (Example 5), and a material located inside (Example 6). The X-ray diffraction results are shown in Fig. 4, and the peak analysis results are shown in Table 2.

實施例4~6均為純度高之鎢酸鋯,又,X射線繞射強度比為習知之JCPDS卡片中不存在之94%、95%、92%之比率。 Examples 4 to 6 are zirconium tungstate having high purity, and the X-ray diffraction intensity ratio is 94%, 95%, and 92% which are not present in the conventional JCPDS card.

與實施例1~3相比強度比降低之原因,有可能係受與投入至水中相比,因熱容之關係而冷卻速度略慢的影響,但可獲得具有前所未有之結晶性的鎢酸鋯。 The reason why the strength ratio is lowered as compared with Examples 1 to 3 may be affected by a slightly slower cooling rate due to the heat capacity than when it is introduced into water, but zirconium tungstate having an unprecedented crystallinity can be obtained. .

(比較例1) (Comparative Example 1)

使用具有充分之WO3之結晶結構的WO3粉末(圖1.b)與實施例1~6中使用之ZrO2粉末進行混合粉碎,放入至石英坩堝之內側貼有鉑箔之容器中,於大氣中以1200℃進行10小時加熱處理,與實施例1~3同樣地投入至水中。將其X射線繞射結果示於圖5。無法獲得鎢酸鋯之結晶結構。 Having sufficient of WO WO 3 powder (FIG. 1.B) was mixed with ZrO 2 powder used in Examples 1 to 6 of the embodiment pulverized, to put the inside of the quartz crucible 3 crystal structure is affixed to the container of the platinum foil, The mixture was heat-treated at 1200 ° C for 10 hours in the air, and was introduced into water in the same manner as in Examples 1 to 3. The X-ray diffraction results are shown in Fig. 5. The crystal structure of zirconium tungstate cannot be obtained.

(比較例2) (Comparative Example 2)

於與實施例1相同條件下進行原料製作與加熱,僅冷卻方法係進行花費8小時恢復至室溫之降溫。將獲得之材料的X射線繞射結果示於圖5。無法獲得鎢酸鋯之結晶結構。 The raw material production and heating were carried out under the same conditions as in Example 1. The cooling only method was carried out by taking 8 hours to return to room temperature. The X-ray diffraction results of the obtained material are shown in Fig. 5. The crystal structure of zirconium tungstate cannot be obtained.

(比較例3) (Comparative Example 3)

與實施例1~3同樣地準備原料,於至1200℃之升溫速度較慢為8小時、且1200℃之保持時間為60小時之條件下進行熱處理,與實施例1~3同樣地藉由投入至水中而進行冷卻。將獲得之材料的X射線繞射結果示於圖6。又,將其波峰之分析結果示於表2。 The raw materials were prepared in the same manner as in the examples 1 to 3, and the heat treatment was carried out under the conditions of a temperature increase rate of 1200 ° C for 8 hours and a holding time of 1200 ° C of 60 hours, and the same as in the first to third embodiments. Cool down to the water. The X-ray diffraction results of the obtained material are shown in Fig. 6. Further, the analysis results of the peaks are shown in Table 2.

雖然顯示結晶結構主要為鎢酸鋯,但於2 θ=21.3°附近出現與ZrW2O8不同之波峰,該強度比為29%。認為其係由於在熱處理中WO3蒸發而成為富ZrO2之相。 Although the crystal structure was mainly shown to be zirconium tungstate, a peak different from ZrW 2 O 8 appeared in the vicinity of 2 θ = 21.3 °, and the intensity ratio was 29%. It is considered to be a phase rich in ZrO 2 due to evaporation of WO 3 in the heat treatment.

(比較例4-5) (Comparative Example 4-5)

考慮到WO3於熱處理中之揮發,而將WO3與ZrO2粉末以莫耳比計設為2.1:1進行混合粉碎,放入至石英坩堝之內側貼有鉑箔之容器中,於大氣 中以1200℃進行1小時(比較例4)與30小時(比較例5)加熱處理,並與實施例1~3同樣地投入至水中。將獲得之材料的X射線繞射結果示於圖6,將其波峰之分析結果示於表2。 Considering the volatilization of WO 3 in the heat treatment, the WO 3 and ZrO 2 powders were mixed and pulverized in a molar ratio of 2.1:1, and placed in a container with a platinum foil attached to the inside of the quartz crucible in the atmosphere. The mixture was heat-treated at 1200 ° C for 1 hour (Comparative Example 4) and 30 hours (Comparative Example 5), and was placed in water in the same manner as in Examples 1 to 3. The X-ray diffraction results of the obtained materials are shown in Fig. 6, and the results of analysis of the peaks thereof are shown in Table 2.

雖然顯示結晶結構主要為鎢酸鋯,但於2 θ=23.7°之前後出現與ZrW2O8不同之波峰,該強度比為37%與7%。其係與WO3相關之波峰,認為其係由於WO3過量地殘留多於蒸發。 Although the crystal structure was mainly shown to be zirconium tungstate, a peak different from ZrW 2 O 8 appeared before 2 θ = 23.7 °, and the intensity ratio was 37% and 7%. It is a peak associated with WO 3 and is believed to be excessively more than evaporation due to WO 3 .

於長時間進行熱處理之情形時,必須考慮WO3之蒸發,難以獲得穩定之品質。另一方面,如實施例般可於極短時間內進行結晶化之情形時,有可以目標之組成穩定地製造的特點。 In the case of heat treatment for a long period of time, evaporation of WO 3 must be considered, and it is difficult to obtain stable quality. On the other hand, when crystallization is performed in a very short time as in the embodiment, there is a feature that the target composition can be stably produced.

[產業上之利用可能性] [Industry use possibility]

如上述習知般,有結晶化之合成花費長時間之問題,目前為止未進展到製品之應用。於實驗室級別雖有使用鉑坩堝進行製作之報告,但不適於量產化。又,氧化鎢有容易揮發(於950℃-2h重量減少0.3%)、難以進行組成之控制之問題。本案發明提供一種鎢酸鋯,其將X射線繞射中位於2 θ=21.4~21.8°之繞射波峰之強度設為100%之情形時,位於2 θ=23.5~23.9°之繞射波峰強度為92~115%。 As is conventionally known, there is a problem that the synthesis of crystallization takes a long time, and the application of the product has not progressed so far. Although there are reports of production using platinum rhodium at the laboratory level, it is not suitable for mass production. Further, the tungsten oxide is easily volatilized (the weight is reduced by 0.3% at 950 ° C to 2 h), and it is difficult to control the composition. The present invention provides a zirconium tungstate which is a diffraction peak intensity at 2 θ=23.5 to 23.9° when the intensity of a diffraction peak at 2 θ=21.4 to 21.8° in the X-ray diffraction is set to 100%. It is 92~115%.

藉此,可藉由減少組成變動並且提昇品質而提昇產率,於相對短時間內進行向結晶化之合成,從而降低製造成本。如此可提供具有負膨脹係數(隨著溫度上升體積變小)之品質優異的材料,故而可對調整玻璃等膨脹係數時使用之產業做出巨大貢獻。 Thereby, the yield can be improved by reducing the composition variation and improving the quality, and the synthesis into crystallization can be performed in a relatively short time, thereby reducing the manufacturing cost. In this way, it is possible to provide a material having a negative expansion coefficient (the volume becomes smaller as the temperature rises), and thus it is possible to contribute greatly to an industry used for adjusting the expansion coefficient such as glass.

Claims (5)

一種鎢酸鋯,其將X射線繞射中位於2 θ=21.4~21.8°之繞射波峰的強度設為100%之情形時,位於2 θ=23.5~23.9°之繞射波峰強度為92~115%。 A zirconium tungstate having a diffraction peak intensity of 2 θ=23.5 to 23.9° when the intensity of the diffraction peak at 2 θ=21.4 to 21.8° is set to 100% in the X-ray diffraction. 115%. 如申請專利範圍第1項之鎢酸鋯,其中,位於2 θ=21.4~21.8°之繞射波峰的半峰寬度為0.05°以上且0.2°以下。 The zirconium tungstate according to the first aspect of the patent application, wherein the half-peak width of the diffraction peak at 2 θ = 21.4 to 21.8° is 0.05° or more and 0.2° or less. 如申請專利範圍第1或2項之鎢酸鋯,其中,於繞射角2 θ=15~60°之範圍內,位於未登錄於JCPDS之卡片編號00-050-1868之2 θ位置之繞射波峰的強度於將位於2 θ=21.4~21.8°之波峰強度設為100%之情形時為2%以下。 Zirconium tungstate according to claim 1 or 2, wherein the diffraction angle is 2 θ=15 to 60°, and is located at the 2 θ position of the card number 00-050-1868 not registered in JCPDS. The intensity of the peak is 2% or less when the peak intensity at 2 θ = 21.4 to 21.8° is 100%. 一種鎢酸鋯之製造方法,其使用如下WO3粉末作為原料,該WO3粉末於2 θ=22~24°之三個繞射波峰的半峰寬度分別為0.25°以上、或2 θ=33~37°之波峰為單一波峰、或者2 θ=49°~51°或53°~57°之波峰為單一波峰。 A method for producing zirconium tungstate using the following WO 3 powder as a raw material, wherein the half-peak widths of the three diffraction peaks of the WO 3 powder at 2 θ=22 to 24° are respectively 0.25° or more, or 2θ=33 The peak of ~37° is a single peak, or the peak of 2θ=49°~51° or 53°~57° is a single peak. 如申請專利範圍第4項之鎢酸鋯之製造方法,其中,於將該WO3粉末與ZrO2粉末混合後,於1190℃以上保持30秒以上,並於3分鐘內急速冷卻至200℃以下而進行製作。 The method for producing zirconium tungstate according to the fourth aspect of the invention, wherein the WO 3 powder and the ZrO 2 powder are mixed, and maintained at 1190 ° C or higher for 30 seconds or more, and rapidly cooled to 200 ° C or less in 3 minutes. And making it.
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JP2002265274A (en) * 2001-03-06 2002-09-18 Takeo Hattori Method for producing powder
JP4999091B2 (en) * 2007-09-11 2012-08-15 学校法人東京理科大学 Method for producing zirconium tungstate-silicon oxide composite sintered body
JP5424195B2 (en) * 2009-03-27 2014-02-26 独立行政法人物質・材料研究機構 Raw powder for thermal spraying and film formation method using the same

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