JP5982058B2 - Zirconium tungstate - Google Patents

Zirconium tungstate Download PDF

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JP5982058B2
JP5982058B2 JP2015508102A JP2015508102A JP5982058B2 JP 5982058 B2 JP5982058 B2 JP 5982058B2 JP 2015508102 A JP2015508102 A JP 2015508102A JP 2015508102 A JP2015508102 A JP 2015508102A JP 5982058 B2 JP5982058 B2 JP 5982058B2
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zirconium tungstate
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高村 博
博 高村
里安 成田
里安 成田
鈴木 了
了 鈴木
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Description

本発明は、ガラス等の膨張係数を調整する際に使用する負の膨張係数(温度上昇とともに体積が小さくなる)を有する材料に関する。 The present invention relates to a material having a negative expansion coefficient (volume decreases with increasing temperature) used when adjusting the expansion coefficient of glass or the like.

近年、益々高精度化が要求される精密機械部品、光学部品、電子材料パッケージにおいては、外部環境に起因した温度変化に伴う歪みの発生を避ける対策が必要になっている。また、センサー類によっては、緊急時に確実に作動できるようにするため、このような応力による素子の劣化を避け、長寿命となる材料設計が要求されている。 In recent years, in precision machine parts, optical parts, and electronic material packages that are required to have higher precision, measures are required to avoid the occurrence of distortion due to temperature changes caused by the external environment. In addition, some sensors are required to have a material design that avoids deterioration of the element due to such stress and has a long life in order to ensure that it can be operated in an emergency.

膨張歪みは、異なる材料の接合界面において体積変化量が異なることからから生じ、時には剥離や破壊の大きな原因となる。
温度上昇と共に体積が収縮する負の膨張材料は、大半の物質に共通に見られる正の熱膨張を有する材料と複合化することにより、その複合素材の熱膨張率を制御することが可能となるため注目されている。特にタングステン酸ジルコニウム(ZrW)は、熱収縮係数が大きく、広い温度範囲で一様に等方的な負の熱膨張を示す特長がある。さらには環境規制基準が厳しくなる昨今、鉛を使用しない非鉛系材料であることから非常に期待された材料となっている。
The expansion strain is caused by the difference in volume change at the bonding interface of different materials, and sometimes causes a large amount of peeling or breaking.
Negative expansion materials that shrink in volume with increasing temperature can be combined with materials with positive thermal expansion commonly found in most substances to control the coefficient of thermal expansion of the composite material. Because of it. In particular, zirconium tungstate (ZrW 2 O 8 ) has a large thermal contraction coefficient and has a characteristic of exhibiting isotropic negative thermal expansion uniformly over a wide temperature range. Furthermore, as environmental regulation standards become stricter, it is a highly anticipated material because it is a lead-free material that does not use lead.

しかしながら、ZrWは1960年代に負の熱膨張を報告された後、様々な研究がなされているが、ペロブスカイトの高い結晶比率を示し、且つ量産できる製法は未だ確立されていない。However, various studies have been made on ZrW 2 O 8 after its negative thermal expansion was reported in the 1960s. However, a production method that shows a high crystal ratio of perovskite and can be mass-produced has not yet been established.

従来技術では、下記特許文献1に、大形で純度の高い単相のタングステン酸ジルコニウム(ZrW)を、安定的に作製することができるという趣旨の方法が提案されている。文献1の方法は、先ず液相法(ゾル−ゲル法)を使って目的物質の元素が正確な化学量論比になっているアモルファス粉末を作り、次に、それを放電プラズマ焼結等の方法で通電加圧焼結する。好ましくは、上記アモルファス粉末を常圧において温度500℃から700℃で焼成することにより、種結晶を予め作っておき、それを放電プラズマ焼結等の方法で通電加圧焼結するという方法である。In the prior art, Patent Document 1 listed below proposes a method that is capable of stably producing a large and highly pure single-phase zirconium tungstate (ZrW 2 O 8 ). In the method of Document 1, first, an amorphous powder in which the element of the target substance has an accurate stoichiometric ratio is made by using a liquid phase method (sol-gel method), and then it is used for discharge plasma sintering or the like. The method is energization and pressure sintering. Preferably, the amorphous powder is fired at a temperature of 500 ° C. to 700 ° C. at normal pressure to prepare a seed crystal in advance, and this is energized and pressure sintered by a method such as discharge plasma sintering. .

そして、このようにすることにより、より優れた結晶性を有する単相のタングステン酸ジルコニウム(ZrW)を得ることができるということが提案されている。しかし、この方法でも、アモルファス粉末を液相反応させる工程では長時間必要であり、グラファイト製金型(治具径20mmΦ)に充填し、プレスするというバッチ式の処理となるため、本当の意味での量産化(毎月数トン以上の生産ライン)という面では不向きであった。By doing so, it has been proposed that a single-phase zirconium tungstate (ZrW 2 O 8 ) having better crystallinity can be obtained. However, this method also requires a long time in the liquid phase reaction process of the amorphous powder, and it is a batch type process in which a graphite mold (jig diameter 20 mmΦ) is filled and pressed. Is not suitable for mass production (production line of several tons or more per month).

他の従来技術として、特許文献2に、酸化物(WOとZrO) を出発原料とし、該原料を二極化された粒径分布とし、この原料粉を所望の型に入れて焼結させる製造方法が提案されている。しかし、特許文献2に開示された酸化物粉末の焼結法では、長時間の混合と長時間の焼結を必要とし、短時間での製造が事実上できず、製造コストがかかるという問題がある。As another prior art, in Patent Document 2, oxide (WO 3 and ZrO 2 ) is used as a starting material, the material is made into a bipolar particle size distribution, and this raw material powder is put into a desired mold and sintered. Proposed manufacturing methods have been proposed. However, the oxide powder sintering method disclosed in Patent Document 2 requires long-time mixing and long-time sintering, and cannot be manufactured in a short time, resulting in high manufacturing costs. is there.

また、特許文献3に、2種類の金属元素が酸素を介して化学結合している化合物(A4+ 6+) を、酸化塩化ジルコニウムとNaイオンを含まないタングステン酸塩を出発物質とし、HOで10時間加水分解させ、HClを加え、48時間還流し、固形物をろ過して、7日間熟成させた後、常圧において600 ℃で10時間焼成してタングステン酸ジルコニウム(ZrW) を作製することが提案されている。
しかし、このような液相法で調整した粉末原料を常圧焼結する方法では、タングステン成分が不安定であり、安定した製造ができず、焼成に長時間を要するため量産性に劣るという問題がある。
Further, in Patent Document 3, a compound (A 4+ M 2 6+ O 8 ) in which two kinds of metal elements are chemically bonded through oxygen, zirconium oxide chloride and tungstate containing no Na ions are used as starting materials. , Hydrolyzed with H 2 O for 10 hours, added HCl, refluxed for 48 hours, filtered solids, aged for 7 days, calcined at 600 ° C. for 10 hours at atmospheric pressure, and zirconium tungstate (ZrW It has been proposed to produce 2 O 8 ).
However, in the method of atmospheric pressure sintering of powder raw materials prepared by such a liquid phase method, the tungsten component is unstable, stable production cannot be performed, and firing requires a long time, resulting in inferior mass productivity. There is.

特開2006−44953号公報JP 2006-44953 A 特開2003−342075号公報JP 2003-342075 A 米国特許第6183713号公報US Pat. No. 6,183,713

上記の従来のように、結晶化の合成に長時間かかるという問題点があり、これまで製品への応用が進んでいなかった。実験室レベルでは白金坩堝を使用して作製した報告はあるが、量産化には不向きであった。また、酸化タングステンは揮発しやすく(950℃−2hで0.3%の重量減少がある)、組成の制御が困難であるという問題があった。本願発明は、組成の変動を少なくし、品質と歩留りを向上させ、結晶化への合成を極めて短時間で行うことによる製造コストの低減化を課題とする。 As described above, there is a problem that it takes a long time to synthesize the crystallization, and the application to the product has not progressed so far. At the laboratory level, although there was a report of using a platinum crucible, it was not suitable for mass production. In addition, tungsten oxide easily volatilizes (there is a 0.3% weight loss at 950 ° C.-2 h), and there is a problem that it is difficult to control the composition. An object of the present invention is to reduce manufacturing costs by reducing composition fluctuations, improving quality and yield, and performing synthesis for crystallization in a very short time.

上記の課題を解決するため、以下の発明を提供するものである。
1)X線回折において2θ=21.4〜21.8°に位置する回折ピークの強度を100%とした場合に、2θ=23.5〜23.9°に位置する回折ピーク強度が92〜115%であることを特徴とするタングステン酸ジルコニウム。
In order to solve the above problems, the following inventions are provided.
1) When the intensity of a diffraction peak located at 2θ = 21.4-21.8 ° in X-ray diffraction is 100%, the diffraction peak intensity located at 2θ = 23.5-23.9 ° is 92- Zirconate tungstate characterized by being 115%.

2)2θ=21.4〜21.8°に位置する回折ピークの半価幅が0.05°以上0.2°以下であることを特徴とする上記1)に記載のタングステン酸ジルコニウム。 2) Zirconate tungstate according to 1) above, wherein the half width of the diffraction peak located at 2θ = 21.4 to 21.8 ° is 0.05 ° or more and 0.2 ° or less.

3)回折角2θ=15〜60°の範囲において、JCPDSのカードコード00−050−1868に登録されていない2θ位置にある回折ピークの強度が、2θ=21.4〜21.8°に位置するピーク強度を100%とした場合に2%以下であることを特徴とする上記1)又は2)に記載のタングステン酸ジルコニウム。
4)2θ=22〜24°の3つの回折ピークの半価幅がそれぞれ0.25°以上であるか、若しくは2θ=33〜37°のピークが単一であるか、又は2θ=49°〜51°若しくは53°〜57°のピークが単一である、WO粉末を、原料として用いることを特徴とするタングステン酸ジルコニウムの製造方法。
5)上記WO粉末をZrO粉末と十分に混ぜ合わせた後、1190℃以上で30秒以上保持し、200℃以下まで3分以内に急速冷却して作製することを特徴とする上記4)記載のタングステン酸ジルコニウムの製造方法。
3) In the range of diffraction angle 2θ = 15-60 °, the intensity of the diffraction peak at the 2θ position not registered in JCPDS card code 00-050-1868 is located at 2θ = 21.4-21.8 °. The zirconium tungstate according to 1) or 2) above, wherein the peak intensity is 2% or less when the peak intensity is 100%.
4) The half width of the three diffraction peaks at 2θ = 22-24 ° is 0.25 ° or more, or the peak at 2θ = 33-37 ° is single, or 2θ = 49 °- A method for producing zirconium tungstate, wherein WO 3 powder having a single peak of 51 ° or 53 ° to 57 ° is used as a raw material.
5) The above-mentioned WO 3 powder is sufficiently mixed with ZrO 2 powder, then held at 1190 ° C. or higher for 30 seconds or longer, and rapidly cooled to 200 ° C. or lower within 3 minutes. The manufacturing method of the zirconium tungstate of description.

従来は、結晶化の合成に長時間かかるという問題点があり、これまで製品への応用が進んでいなかった。実験室レベルでは白金坩堝を使用して作製した報告はあるが、量産化には不向きであった。また、酸化タングステンは揮発しやすく(950℃−2hで0.3%の重量減少がある)、組成の制御が困難であるという問題があった。
本願発明は、これらの問題を解決することが可能となり、組成の変動を少なくすることができ、品質と歩留まりを向上させ、結晶化への合成が比較的短時間で行うことによる製造コストの低減化が達成できるという著しい効果を有する。
Conventionally, there is a problem that it takes a long time to synthesize the crystallization, and the application to the product has not progressed so far. At the laboratory level, although there was a report of using a platinum crucible, it was not suitable for mass production. In addition, tungsten oxide easily volatilizes (there is a 0.3% weight loss at 950 ° C.-2 h), and there is a problem that it is difficult to control the composition.
The present invention makes it possible to solve these problems, reduce composition fluctuations, improve quality and yield, and reduce production costs by synthesizing to crystallization in a relatively short time. It has a remarkable effect that can be achieved.

WO粉末のXRDの結果を示す図である。Is a diagram showing the results of XRD of WO 3 powder. 標準的なZrO粉末のXRDの結果を示す図である。Is a diagram showing the results of XRD of standard ZrO 2 powder. 実施例1〜3のXRDの結果を示す図である。It is a figure which shows the result of XRD of Examples 1-3. 実施例4〜6のXRDの結果を示す図である。It is a figure which shows the result of XRD of Examples 4-6. 比較例1〜2のXRDの結果を示す図である。It is a figure which shows the result of XRD of Comparative Examples 1-2. 比較例3〜5のXRDの結果を示す図である。It is a figure which shows the result of XRD of Comparative Examples 3-5.

本願発明のタングステン酸ジルコニウムは、X線回折において2θ=21.4〜21.8°に位置する回折ピーク強度を100%とした場合に、2θ=23.5〜23.9°に位置するピークが92〜115%であることを特徴とする。
タングステン酸ジルコニウムでX線回折(JCPDS: Joint Committee for Powder Diffraction Standards )で登録されているのは、下記の表1に記載する4種類がある。すなわち、カードコード00−013−0557、00−050−1868、01−083−1005、01−087−1528の4種である。
いずれも2θ=21.552〜21.690°の回折ピーク強度の方が、2θ=23.643〜23.789°の回折ピーク強度より大きくなっている。
一方、本願発明では、後者の回折ピークは従来の相対強度比より大きくなる特徴があり、従来はこの特徴を示す「タングステン酸ジルコニウム」は存在していない。
The zirconium tungstate of the present invention has a peak located at 2θ = 23.5-23.9 ° when the diffraction peak intensity located at 2θ = 21.4-21.8 ° in X-ray diffraction is taken as 100%. Is 92 to 115%.
There are four types of zirconium tungstate registered in X-ray diffraction (JCPDS: Joint Committee for Powder Diffraction Standards) as shown in Table 1 below. That is, there are four types of card codes 00-013-0557, 00-050-1868, 01-083-1005, and 01-087-1528.
In any case, the diffraction peak intensity at 2θ = 21.552 to 21.690 ° is larger than the diffraction peak intensity at 2θ = 23.643 to 23.789 °.
On the other hand, in the present invention, the latter diffraction peak is characterized by being larger than the conventional relative intensity ratio, and conventionally, there is no “zirconium tungstate” exhibiting this characteristic.

この特徴を活かして、下記に示すように、タングステン酸ジルコニウムを有効に利用できる。本発明のタングステン酸ジルコニウムの熱膨張係数をTMA(熱機械分析)で計測すると、−9.6x10−6/Kとなり、従来と同等もしくはそれ以上の大きな負の熱膨張特性を示した。このタングステン酸ジルコニウムは非常に大きな負の膨張係数を有するので、主体となる正の膨張材料に添加することにより、膨張率が限りなくゼロに近い、ゼロ膨張材料をより効果的に作製することが可能となる。
また異なる材料が接合される素子においては、負膨張材を添加することにより、両材料の膨張係数を近づけて膨張歪みの発生を抑えられる対策がとられるが、その場合においても、従来に比べて同等以下の添加量で同じ効果が得られるため非常に有効となる。
Taking advantage of this feature, as shown below, zirconium tungstate can be used effectively. When the thermal expansion coefficient of the zirconium tungstate of the present invention was measured by TMA (thermomechanical analysis), it was −9.6 × 10 −6 / K, indicating a large negative thermal expansion characteristic equal to or higher than that of the conventional one. Since this zirconium tungstate has a very large negative expansion coefficient, by adding it to the main positive expansion material, it is possible to more effectively produce a zero expansion material whose expansion coefficient is almost zero. It becomes possible.
In addition, in elements to which different materials are joined, by adding a negative expansion material, measures can be taken to reduce the occurrence of expansion strain by bringing the expansion coefficients of both materials closer to each other. Since the same effect can be obtained with an addition amount equal to or less than that, it is very effective.

また、本願発明のタングステン酸ジルコニウムの製造に際しては、WOの標準的な結晶構造(カードコード01−083−0950)とは異なり、2θ=22〜24°の3つの回折ピークの半価幅がそれぞれ0.25°以上であるか、若しくは2θ=33〜37°の回折ピークがほぼ一体化して単一であるか、又は2θ=49°〜51°若しくは53°〜57°のピークがブロード状になっている結晶化が不十分な状態のWO粉末(図1.a)と標準的なZrO粉末(図2)を混合粉砕し、平均粒径2μm以下の加熱合成前の原料を準備した。In addition, in producing the zirconium tungstate of the present invention, unlike the standard crystal structure of WO 3 (card code 01-083-0950), the half width of three diffraction peaks at 2θ = 22-24 ° is different. Each is 0.25 ° or more, or diffraction peaks of 2θ = 33 to 37 ° are almost integrated and single, or peaks of 2θ = 49 ° to 51 ° or 53 ° to 57 ° are broad. Prepare and prepare raw material before heat synthesis with an average particle size of 2 μm or less by mixing and grinding WO 3 powder (FIG. 1.a) with insufficient crystallization and standard ZrO 2 powder (FIG. 2). did.

前記結晶化が不十分な状態のWO粉末については、回折ピークにより判定(評価)することができる。すなわち、回折ピークの半価幅がそれぞれ0.25°以上であるか、若しくは2θ=33〜37°の回折ピークがほぼ一体化して単一であるか、又は2θ=49°〜51°若しくは53°〜57°のピークがブロード状になっているものは、いずれも結晶化が不十分な状態のWO粉末であると言える。
そして、1190℃以上の高温で30秒以上保持してタングステン酸ジルコニウム(ZrW)に結晶化させた後、降温時にWOやZrOに再度、分解するのを避けるために瞬時に冷却することにより達成できる。その際の冷却速度は、200℃以下の温度になるまでに、3分以内、より好ましくは1分以内であることが望ましい。
The WO 3 powder in an insufficiently crystallized state can be determined (evaluated) by a diffraction peak. That is, the half width of each diffraction peak is 0.25 ° or more, or the diffraction peaks of 2θ = 33 to 37 ° are almost integrated and single, or 2θ = 49 ° to 51 ° or 53 It can be said that any of those having a broad peak at from -57 ° is a WO 3 powder in a state of insufficient crystallization.
And after maintaining at a high temperature of 1190 ° C or higher for 30 seconds or more to crystallize to zirconium tungstate (ZrW 2 O 8 ), it is cooled instantly to avoid re-decomposition into WO 3 or ZrO 2 when the temperature is lowered. This can be achieved. The cooling rate at that time is desirably within 3 minutes, more preferably within 1 minute, until the temperature reaches 200 ° C. or lower.

以上に説明した本願発明の「タングステン酸ジルコニウム」は、加熱時に、従来に比べて極めて短時間でタングステン酸ジルコニウムの結晶構造を有する材料に変換できるため、蒸気圧の高いWOの揮発を抑え、組成の変動を少なくすることが可能となり、品質と歩留まりを向上させることができる。またこの短時間の合成は量産化や製造コストの低減のおいても可能となる。
さらに、本願発明のタングステン酸ジルコニウムは、2θ=21.4〜21.8°に位置するX線回折ピークの半価幅が0.05°以上0.2°以下であるタングステン酸ジルコニウム及びJCPDSのカード00−050−1868に登録されていない2θ位置にある回折ピークの強度が、2θ=21.4〜21.8°に位置するピーク強度を100%とした場合に2%以下である特性を備えている。
Since the above-described “zirconium tungstate” of the present invention can be converted into a material having a crystal structure of zirconium tungstate in a very short time when heated, it suppresses volatilization of WO 3 having a high vapor pressure, Variations in composition can be reduced, and quality and yield can be improved. In addition, this short-time synthesis is possible even for mass production and reduction of manufacturing costs.
Further, the zirconium tungstate of the present invention has a half-width of the X-ray diffraction peak located at 2θ = 21.4 to 21.8 ° of 0.05 ° or more and 0.2 ° or less and JCPDS. The characteristic that the intensity of the diffraction peak at the 2θ position not registered in the card 00-050-1868 is 2% or less when the peak intensity at 2θ = 21.4 to 21.8 ° is defined as 100%. I have.

本願発明を、実施例及び比較例に基づいて説明する。なお、本実施例はあくまで一例であり、この例のみに制限されるものではない。すなわち、本発明に含まれる他の態様または変形を包含するものである。 The present invention will be described based on examples and comparative examples. In addition, a present Example is an example to the last, and is not restrict | limited only to this example. That is, other aspects or modifications included in the present invention are included.

(実施例1−3)
APT(パラタングステン酸アンモニウム)から金属タングステンに還元する際の中間生成物である完全なWOの結晶構造を有さないWO粉末(図1.a)と、CaやY等の添加でジルコニアを安定化させていない純ZrO粉末をモル比で2:1になるように秤量し、粉砕機で平均粒径0.3μmまで混合・微粉砕した。
(Example 1-3)
WO 3 powder (FIG. 1.a) that does not have a complete WO 3 crystal structure, which is an intermediate product when APT (ammonium paratungstate) is reduced to metallic tungsten, and addition of Ca, Y or the like zirconia The pure ZrO 2 powder that has not been stabilized is weighed so as to have a molar ratio of 2: 1, and is mixed and pulverized to an average particle size of 0.3 μm by a pulverizer.

この原料を石英坩堝の内張りに白金箔を貼った容器に入れ、大気中1200℃で10時間(実施例1)、1時間(実施例2)、10分(実施例3)保持した後、炉温1200℃のままの状態から坩堝を取り出し、十分な水量のある20℃の水の中へ、速やかに坩堝を反転させ原料を投入した。この条件で得られたX線回折の結果を図3に示した。 This raw material was put in a container in which a platinum foil was pasted on the lining of a quartz crucible and held in the atmosphere at 1200 ° C. for 10 hours (Example 1), 1 hour (Example 2), and 10 minutes (Example 3), and then the furnace The crucible was taken out from the state where the temperature remained at 1200 ° C., and the raw material was charged by quickly inverting the crucible into 20 ° C. water with a sufficient amount of water. The result of X-ray diffraction obtained under these conditions is shown in FIG.

また、2θ=21.4〜21.8°に位置して回折ピーク強度比を100とするピークの具体的な2θとその半価幅の値、及びタングステン酸ジルコニウムのもう一方のメインピークである2θ=23.5〜23.9°に位置する回折ピークの具体的な2θとその強度比の値、さらには2θ=15〜60°の範囲においてJCPDSカード00−050−1868に登録されていない2θ位置にある回折ピークを2θ=21.4〜21.8に位置するピークと比較した値を表2に示した。 Further, it is a specific 2θ of a peak located at 2θ = 21.4 to 21.8 ° and having a diffraction peak intensity ratio of 100, a half width value thereof, and another main peak of zirconium tungstate. It is not registered in JCPDS card 00-050-1868 in the range of specific 2θ of the diffraction peak located at 2θ = 23.5-23.9 ° and its intensity ratio, and further in the range of 2θ = 15-60 ° Table 2 shows values obtained by comparing the diffraction peak at the 2θ position with the peak at 2θ = 21.4 to 21.8.

実施例1〜3は、いずれも純度の高いタングステン酸ジルコニウムになっており、また強度比は従来のJCPDSカードには存在しない102%,106%,115%の比率となった。これは原料としたWOが不安定な結晶構造のため、完全なWOの結晶構造を有する材料より、タングステン酸ジルコニウムへの結晶化が従来になく急速に進んだ可能性がある。また1200℃からの急速冷却が十分に適切で、高温での形成された結晶構造を大きく変化させることなく降温できたためと考えられる。さらに2θ=21.4〜21.8°に位置して回折ピーク半価幅が0.05°以上0.2°以下と狭いため、結晶度が高いことも分かる。Examples 1 to 3 were all made of zirconium tungstate having a high purity, and the strength ratios were 102%, 106%, and 115%, which did not exist in the conventional JCPDS card. This is because the WO 3 used as a raw material has an unstable crystal structure, and thus crystallization to zirconium tungstate may have progressed more rapidly than a material having a complete WO 3 crystal structure. Further, it is considered that rapid cooling from 1200 ° C. was sufficiently appropriate and the temperature could be lowered without greatly changing the crystal structure formed at a high temperature. Further, it is also found that the crystallinity is high because the diffraction peak half-width is as narrow as 0.05 ° to 0.2 ° at 2θ = 21.4 to 21.8 °.

(実施例4−6)
実施例1−3と同様に準備したWOとZrOの混合原料を甲鉢に入れ、連続炉(ローラーハース炉)で、大気中1200℃、1時間加熱した後、冷却ゾーンで液体窒素のシャワーを導入し急速冷却した。
実施例4−6は、甲鉢内で上方に位置した材料(実施例4)、甲鉢の側面に位置した材料(実施例5)、内部に位置した材料(実施例6)になる。X線回折結果は図4に、そのピークの分析結果を表2に示した。
(Example 4-6)
A mixed raw material of WO 3 and ZrO 2 prepared in the same manner as in Example 1-3 was put into a shell, heated in the atmosphere at 1200 ° C. for 1 hour in a continuous furnace (roller hearth furnace), and then the liquid nitrogen was cooled in the cooling zone. A shower was introduced and cooled rapidly.
Example 4-6 is the material located above in the upper (Example 4), the material located on the side of the upper (Example 5), and the material located inside (Example 6). The X-ray diffraction results are shown in FIG. 4 and the analysis results of the peaks are shown in Table 2.

実施例4〜6は、いずれも純度の高いタングステン酸ジルコニウムになっており、またX線回折強度比は従来のJCPDSカードには存在しない94%、95%、92%の比率となった。
実施例1〜3より強度比が低下したのは、水中に投入するよりも熱容量の関係で冷却速度が幾分遅くなったことが影響している可能性があるが、従来にない結晶性を有するタングステン酸ジルコニウムを得ることができた。
Examples 4 to 6 were all made of zirconium tungstate with high purity, and the X-ray diffraction intensity ratio was 94%, 95%, and 92%, which did not exist in the conventional JCPDS card.
The strength ratio was lower than in Examples 1 to 3, which may be due to the fact that the cooling rate was somewhat slower due to the heat capacity than that in the water, but the crystallinity that has not existed in the past. It was possible to obtain zirconium tungstate.

(比較例1)
十分なWOの結晶構造を有するWO粉末(図1.b)と、実施例1〜6で使用したZrO粉末を用いて混合粉砕し、石英坩堝の内張りに白金箔を貼った容器に入れ、大気中1200℃で10時間加熱処理し、実施例1〜3と同様に水中へ投入した。そのX線回折結果を図5に示した。タングステン酸ジルコニウムの結晶構造は得られなかった。
(Comparative Example 1)
In a container in which WO 3 powder having a sufficient WO 3 crystal structure (FIG. 1.b) and the ZrO 2 powder used in Examples 1 to 6 were mixed and pulverized, and a platinum foil was attached to the quartz crucible lining. And heated at 1200 ° C. for 10 hours in the atmosphere and put into water in the same manner as in Examples 1 to 3. The X-ray diffraction results are shown in FIG. The crystal structure of zirconium tungstate was not obtained.

(比較例2)
実施例1と同条件で原料作製と加熱を行い、冷却方法のみ8時間かけて室温に戻す降温を行った。得られた材料のX線回折結果を図5に示した。タングステン酸ジルコニウムの結晶構造は得られなかった。
(Comparative Example 2)
The raw material was prepared and heated under the same conditions as in Example 1, and the temperature was lowered to room temperature over 8 hours only for the cooling method. The X-ray diffraction result of the obtained material is shown in FIG. The crystal structure of zirconium tungstate was not obtained.

(比較例3)
実施例1〜3と同様に原料を準備し、1200℃までの昇温速度が8時間と遅く、また1200℃での保持時間が60時間となる条件で熱処理し、実施例1〜3と同様に水中投入で冷却した。得られた材料のX線回折結果を図6に示した。また、そのピークの分析結果を表2に示した。
結晶構造は主としてタングステン酸ジルコニウムであることを示したが、2θ=21.3°付近にZrWとは異なるピークが出現しており、この強度比は29%であった。これは熱処理中にWOが蒸発してZrOがリッチな相になったためと考えられる。
(Comparative Example 3)
Raw materials were prepared in the same manner as in Examples 1 to 3, and heat treatment was performed under the conditions that the rate of temperature increase to 1200 ° C. was as slow as 8 hours and the holding time at 1200 ° C. was 60 hours. It was cooled by charging in water. The X-ray diffraction result of the obtained material is shown in FIG. The analysis results of the peak are shown in Table 2.
The crystal structure showed that it was mainly zirconium tungstate, but a peak different from ZrW 2 O 8 appeared around 2θ = 21.3 °, and the intensity ratio was 29%. This is presumably because WO 3 was evaporated during the heat treatment and a ZrO 2 rich phase was formed.

(比較例4−5)
WOの熱処理中の揮発を考慮して、WOとZrO粉末をモル比で2.1:1として混合粉砕し、石英坩堝の内張りに白金箔を貼った容器に入れ、大気中1200℃で1時間(比較例4)と30時間(比較例5)で加熱処理し、実施例1〜3と同様に水中へ投入した。得られた材料のX線回折結果を図6に、そのピークの分析結果を表2に示した。
(Comparative Example 4-5)
In consideration of volatilization during the heat treatment of WO 3 , WO 3 and ZrO 2 powder are mixed and pulverized at a molar ratio of 2.1: 1, put in a container in which a platinum foil is pasted on a quartz crucible lining, and 1200 ° C. in the air Then, heat treatment was performed for 1 hour (Comparative Example 4) and 30 hours (Comparative Example 5), and the mixture was put into water in the same manner as in Examples 1 to 3. The X-ray diffraction result of the obtained material is shown in FIG. 6, and the analysis result of the peak is shown in Table 2.

結晶構造は主としてタングステン酸ジルコニウムであることを示したが、2θ=23.7°の前後にZrWとは異なるピークが出現しており、この強度比は37%と7%であった。これはWOに関係するピークであり、WOが蒸発するよりも過剰に残留したためと考えられる。
長時間熱処理する場合は、WOの蒸発を考慮する必要がり、安定した品質を得るのが難しい。一方、実施例にあるように極めて短時間で結晶化できる場合は狙った配合で安定して製造できる特長がある。
The crystal structure showed that it was mainly zirconium tungstate, but peaks different from ZrW 2 O 8 appeared around 2θ = 23.7 °, and the intensity ratio was 37% and 7%. . This is a peak related to WO 3 , which is considered to be because the WO 3 remained excessively than evaporated.
When heat treating for a long time, it is necessary to consider the evaporation of WO 3 and it is difficult to obtain stable quality. On the other hand, when it can be crystallized in a very short time as in the examples, it has the advantage that it can be stably produced with the targeted formulation.

上記の従来のように、結晶化の合成に長時間かかるという問題点があり、これまで製品への応用が進んでいなかった。実験室レベルでは白金坩堝を使用して作製した報告はあるが、量産化には不向きであった。また、酸化タングステンは揮発しやすく(950℃−2hで0.3%の重量減少がある)、組成の制御が困難であるという問題があった。本願発明は、X線回折において2θ=21.4〜21.8°に位置する回折ピークの強度を100%とした場合に、2θ=23.5〜23.9°に位置する回折ピーク強度が92〜115%であるタングステン酸ジルコニウムを提供する。 As described above, there is a problem that it takes a long time to synthesize the crystallization, and the application to the product has not progressed so far. At the laboratory level, although there was a report of using a platinum crucible, it was not suitable for mass production. In addition, tungsten oxide easily volatilizes (there is a 0.3% weight loss at 950 ° C.-2 h), and there is a problem that it is difficult to control the composition. In the present invention, when the intensity of a diffraction peak located at 2θ = 21.4 to 21.8 ° in X-ray diffraction is 100%, the diffraction peak intensity located at 2θ = 23.5 to 23.9 ° is Provide zirconium tungstate that is 92-115%.

これにより、組成変動を少なくすると共に品質の向上により歩留まりを向上させ、結晶化への合成が比較的短時間で行うことによる製造コストの低減化を可能とするものである。このように負の膨張係数(温度上昇とともに体積が小さくなる)を有する品質に優れた材料を提供できるので、ガラス等の膨張係数を調整する際に使用する産業に大きく貢献できる。 As a result, the composition variation is reduced, the yield is improved by improving the quality, and the production cost can be reduced by performing the synthesis for crystallization in a relatively short time. As described above, since a material having a negative expansion coefficient (the volume decreases as the temperature rises) and excellent quality can be provided, it can greatly contribute to the industry used when adjusting the expansion coefficient of glass or the like.

Claims (3)

X線回折において2θ=21.4〜21.8°に位置する回折ピークの強度を100%とした場合に、2θ=23.5〜23.9°に位置する回折ピーク強度が102%〜115%であり、回折角2θ=15〜60°の範囲において、JCPDSのカードコード00−050−1868に登録されていない2θ位置にある回折ピークの強度が、2θ=21.4〜21.8°に位置するピーク強度を100%とした場合に2%以下であることを特徴とするタングステン酸ジルコニウム。    In X-ray diffraction, when the intensity of a diffraction peak located at 2θ = 21.4-21.8 ° is 100%, the diffraction peak intensity located at 2θ = 23.5-23.9 ° is 102% -115. In the range of diffraction angle 2θ = 15-60 °, the intensity of the diffraction peak at the 2θ position not registered in JCPDS card code 00-050-1868 is 2θ = 21.4-21.8 °. Zirconate tungstate characterized by being 2% or less when the peak intensity located at 100 is 100%. 2θ=21.4〜21.8°に位置する回折ピークの半価幅が0.05°以上0.2°以下であることを特徴とする請求項1に記載のタングステン酸ジルコニウム。   2. The zirconium tungstate according to claim 1, wherein the half width of a diffraction peak located at 2θ = 21.4 to 21.8 ° is 0.05 ° or more and 0.2 ° or less. 2θ=22〜24°の3つの回折ピークの半価幅がそれぞれ0.25°以上であるか、若しくは2θ=33〜37°のピークが単一であるか、又は2θ=49°〜51°若しくは53°〜57°のピークが単一であるWO粉末を原料として用い、該WO 粉末とZrO粉末とを混合した後、1190℃以上1200℃以下で30秒〜10時間加熱・保持し、次に200℃以下まで3分以内に急速冷却してタングステン酸ジルコニウムを作製することを特徴とするタングステン酸ジルコニウムの製造方法。 The half-value width of three diffraction peaks at 2θ = 22-24 ° is 0.25 ° or more, or the peak at 2θ = 33-37 ° is single, or 2θ = 49 ° -51 ° Alternatively, WO 3 powder having a single peak at 53 ° to 57 ° is used as a raw material, and after mixing the WO 3 powder and ZrO 2 powder, heating and holding at 1190 ° C. to 1200 ° C. for 30 seconds to 10 hours And then rapidly cooling to 200 ° C. or less within 3 minutes to produce zirconium tungstate.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002265274A (en) * 2001-03-06 2002-09-18 Takeo Hattori Method for producing powder
JP2009067619A (en) * 2007-09-11 2009-04-02 Tokyo Univ Of Science Zirconium tungstate-silicon oxide composite sintered compact, method of manufacturing the composite sintered compact and formed body provided with composite sintered compact
JP2010229515A (en) * 2009-03-27 2010-10-14 National Institute For Materials Science Raw powder for thermal spraying and method for forming film using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002265274A (en) * 2001-03-06 2002-09-18 Takeo Hattori Method for producing powder
JP2009067619A (en) * 2007-09-11 2009-04-02 Tokyo Univ Of Science Zirconium tungstate-silicon oxide composite sintered compact, method of manufacturing the composite sintered compact and formed body provided with composite sintered compact
JP2010229515A (en) * 2009-03-27 2010-10-14 National Institute For Materials Science Raw powder for thermal spraying and method for forming film using the same

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
JPN6015051517; H. LIU et al.: 'Effects of HCl concentration on the growth and negative thermal expansion property of the ZrW2O8 nan' Ceramics International Vol.38, No.2, 201203, p.1341-1345 *
JPN6015051519; T. HASHIMOTO et al.: 'Observation of two kinds of phase transitions of ZrW2O8 by power-compensated differential scanning c' Solid State Communications Vol.116, No.3, 200009, p.129-132 *
JPN6015051520; K. D. BUYSSER et al.: 'Study of Negative Thermal Expansion and Shift in Phase Transition Temperature in Ti4+- and Sn4+-Subs' Inorganic Chemistry Vol.47, No.2, 20080121, p.736-741 *
JPN6015051523; R. ZHAO et al.: 'A novel route to synthesize cubic ZrW2-xMoxO8 (x=0-1.3) solid solutions and their negative thermal e' Journal of Solid State Chemistry Vol.180, No.11, 200711, p.3160-3165 *
JPN6015051526; Y. MORITO et al.: 'Preparation of Dense Negative-Thermal-Expansion Oxide by Rapid Quenching of ZrW2O8 Melt' Journal of the Ceramic Society of Japan Vol.110, No.6, 2002, p.544-548 *

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