TW201436260A - 光伏元件與其製作方法 - Google Patents
光伏元件與其製作方法 Download PDFInfo
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- TW201436260A TW201436260A TW102148202A TW102148202A TW201436260A TW 201436260 A TW201436260 A TW 201436260A TW 102148202 A TW102148202 A TW 102148202A TW 102148202 A TW102148202 A TW 102148202A TW 201436260 A TW201436260 A TW 201436260A
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- 238000000034 method Methods 0.000 title claims description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 92
- 238000000576 coating method Methods 0.000 claims abstract description 92
- 239000002086 nanomaterial Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 70
- 239000002041 carbon nanotube Substances 0.000 claims description 58
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 54
- 238000005520 cutting process Methods 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 17
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- 239000002055 nanoplate Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 abstract description 27
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 172
- 239000000243 solution Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000012799 electrically-conductive coating Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002071 nanotube Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 6
- 239000002073 nanorod Substances 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000002135 nanosheet Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 3
- 229960001763 zinc sulfate Drugs 0.000 description 3
- 229910000368 zinc sulfate Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- -1 polyammonium) Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical group C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NPKPKSNMIYBLFQ-UHFFFAOYSA-N 9,10,10-trimethylundec-5-yne-4,7-diol Chemical compound CCCC(O)C#CC(O)CC(C)C(C)(C)C NPKPKSNMIYBLFQ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DJWUNCQRNNEAKC-UHFFFAOYSA-L zinc acetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O DJWUNCQRNNEAKC-UHFFFAOYSA-L 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/02—Details
- H01L31/0216—Coatings
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract
光伏元件包括:基板;位於基板上的背接觸層;用以吸收光子並位於背接觸層上的吸收層;位於吸收層上的緩衝層;位於緩衝層上的導電塗層;以及位於導電塗層上的透明導電層。導電塗層包括至少一種奈米材料,其至少一尺寸介於0.5nm至1000nm之間。
Description
本發明係關於光伏元件,更特別關於具有透明導電層之光伏元件與其製作方法。
光伏元件(亦稱作太陽能電池)吸收太陽光並將光能轉換為電能。光伏元件與其製作方法持續改良,以提供更薄的設計與更高的轉換效率。
將一或多層的光伏材料薄膜沉積於基板上,即形成薄膜太陽能電池。光伏材料薄膜的厚度介於幾個奈米至數十微米。光伏材料包括銻化鎘(CdTe)、銅銦鎵硒(CIGS)、或非晶矽(α-Si)。上述材料作為光吸收層。光伏元件可更包含其他薄膜如緩衝層、背接觸層、與正接觸層。
本發明一實施例提供一種光伏元件,包括:基板;背接觸層,位於基板上;吸收層,用以吸收光子並位於背接觸層上;緩衝層,位於吸收層上;導電塗層,位於緩衝層上;以及透明導電層,位於導電塗層上,其中導電塗層包括至少一種奈米材料,其至少一尺寸介於0.5nm至1000nm之間。
本發明一實施例提供一種光伏元件,包括:基板;背接觸層,位於基板上;吸收層,位於背接觸層上;緩衝層,
位於吸收層上,其中吸收層與緩衝層係半導體;導電塗層,包含碳奈米管或石墨烯微板,且位於緩衝層上;以及透明導電氧化物層位於導電塗層上。
本發明一實施例提供一種光伏元件的製作方法,包括:形成背接觸層於基板上;形成用以吸收光子的吸收層於背接觸層上;形成緩衝層於吸收層上;沉積導電塗層於緩衝層上;以及形成透明導電層於導電塗層上,其中導電塗層包括至少一種奈米材料,且奈米材料具有至少一尺寸介於0.5nm至1000nm之間。
L1、L2‧‧‧厚度
P1、P2、P3、113‧‧‧切割線
100、400、500、600、808‧‧‧光伏元件
102‧‧‧基板
104‧‧‧背接觸層
106‧‧‧吸收層
108‧‧‧緩衝層
110‧‧‧導電塗層
112‧‧‧透明導電層
200‧‧‧方法
202、204、206、208、210、212‧‧‧步驟
801‧‧‧溶液
802‧‧‧容器
806‧‧‧奈米材料
810、812‧‧‧電極
814‧‧‧電源
第1A至1E圖係某些實施例中,部份光伏元件的製程剖視圖;第2圖係某些實施例中,製作光伏元件的方法流程圖;第3A圖係某些實施例中,形成具有紋路表面之緩衝層的部份元件之製程剖視圖;第3B圖係某些實施例中,沉積導電塗層於緩衝層之紋路表面上的部份光伏元件之製程上視圖;第4圖係某些實施例中,形成具有紋路表面之吸收層的部份份光伏元件之製程剖視圖;第5圖係某些實施例中,具有切割線之部份光伏元件的剖視圖;第6圖係某些實施例中,部份光伏元件的剖視圖,其中導電塗層中的奈米材料之方向實質上垂直於切割線;
第7圖係某些實施例中,導電塗層中奈米材料的上視圖,其中奈米材料之方向實質上垂直於光伏元件中的切割線;第8A至8E圖係某些實施例中,沉積導電塗層於緩衝層上的製程示意圖;第9A至9B圖係某些實施例中,具有方向的奈米材料之導電塗層其形成機制的示意圖,且第9B圖係第9A圖的部份放大圖;以及第10圖係某些實施例中,於電場中以包含碳奈米管之溶液沉積導電塗層的製程示意圖。
實施例的描述主要是結合相關圖式,因此圖式應視作整份說明書的一部份。上述內容中的空間性相對用語如「較低」、「較高」、「水平」、「垂直」、「上」、「下」、「上方」、「下方」、「頂部」、與「底部」及相關衍生詞如「水平地」、「向下地」、「向上地」等等,應視作描述中或圖式中所示的方向。這些用語只是為了方便描述,並不需於特定方向裝設或操作裝置。關於接合、耦接、或類似用語,比如「連接」與「內連線」,指的是固定結構或彼此直接(或以中間結構間接)接合的關係,以及可移動的或固定的接合關係,除非以其他方式明確描述。
用於光伏元件之透明導電層具有雙重功用:讓光得以穿過以到達吸收層,亦作為正接觸層以傳輸光產生的電荷形成輸出電流。在某些實施例中,透明導電氧化物(TCO)可作為正接觸層。同時改善具有TCO之透明導電層的導電性與透光度,可改善光伏元件的效率。
本發明提供光伏元件與其形成方法。本發明之光伏元件結合導電塗層與透明導電層,以同時改良透明導電層的導電性與透光性。如此一來,上述光伏元件具有優異的光伏效率。
除了特別說明,下述的奈米材料指的是尺寸如直徑及/或長度介於0.1nm至1000nm之間的材料。合適的奈米材料包括但不限於奈米粒子、奈米管、奈米纖維、奈米棒、奈米微板、奈米片、或上述之組合。
在第1A至1E、3A至3B、4至7、與8A至10圖中,相同標號將用以標示相同元件,且不重複敘述前述圖示已提及的結構以簡化說明。第2圖中的方法將搭配第1A至1E圖的結構說明。
第2圖係某些實施例中,製作光伏元件之方法200的流程圖。第1A至1E圖係某些實施例中,製作光伏元件100的製程剖視圖。
步驟202形成背接觸層104於基板102上。在步驟202後,形成部份光伏元件100之結構如第1A圖所示。基板102與背接觸層104可為用於薄膜光伏元件的任何合適材料。適用於基板102的材料包含但不限於玻璃(如鈉鈣玻璃)、高分子膜(如聚亞醯胺)、或金屬箔(如不鏽鋼)。基板102的膜厚可為任何合適範圍,在某些實施例中可介於0.1mm至5mm之間。適用於背接觸層104的材料包含但不限於銅、鎳、鉬、或任何其他金屬或導電材料。背接觸層104的材料選擇可取決於薄膜光伏元件的種類。舉例來說,CIGS薄膜光伏元件之背接觸層104為鉬。在某些實施例中,銻化鎘薄膜光伏元件的背接觸層104為銅或
鎳。背接觸層104的厚度可為奈米級或微米級,比如介於100nm至20微米之間。在某些實施例中,背接觸層104的厚度介於200nm至10微米之間。在步驟202後,可蝕刻背接觸層104以形成圖案。
在步驟204中,用以吸收光子的吸收層106係形成於背接觸層104上。在步驟204後,形成部份光伏元件100之結構如第1B圖所示。吸收層106為p型或n型的半導體材料。適用於吸收層106的材料包含但不限於銻化鎘(CdTe)、銅銦鎵硒(CIGS)、或多晶矽(α-Si)。在某些實施例中,吸收層106為包含銅、銦、鎵、與硒的半導體如CuInxGa1-xSe2,其中x介於0至1之間。在某些實施例中,吸收層106為包含銅、銦、鎵、與硒的p型半導體。吸收層106的厚度為奈米級或微米級,比如介於0.5微米至10微米之間。在某些實施例中,吸收層106的厚度介於500nm至2微米之間。
吸收層106的形成方法可為濺鍍、化學氣相沉積、印刷、電沉積、或類似方法。舉例來說,可先濺鍍含特定比例之銅、銦、與鎵的金屬膜後,再進行硒化製程以將硒或含硒的氣態化學品混入金屬膜中,以形成CIGS層。在某些實施例中,硒的沉積方法可為物理氣相沉積(PVD)。
步驟206形成緩衝層108於吸收層106上。在步驟206後,形成部份光伏元件100之結構如第1C圖所示。在某些實施例中,緩衝層108包含但不限於CdS或ZnS。在某些實施例中,緩衝層108的厚度係奈米級,比如介於5nm至100nm之間。
形成緩衝層108的合適製程可為濺鍍或化學氣相沉
積。舉例來說,某些實施例中的緩衝層108為CdS、ZnS、或CdS與ZnO的混合物,其沉積方法為水熱反應或溶液中的化學浴沉積(CBD)。舉例來說,某些實施例中的ZnS薄膜之緩衝層108,係形成於CIGS的吸收層106上。在包含硫酸鋅、氨、與硫脲的80℃水溶液中,可形成緩衝層108。在某些實施例中,合適溶液包含0.16M的硫酸鋅、7.5M的氨、與0.6M的硫脲。
在某些實施例中,緩衝層108與吸收層106均具有紋路表面。在某些實施例中,緩衝層108具有紋路表面如第1C圖所示。上述紋路表面的形成方法可為蝕刻或臨場沉積材料,且材料包含奈米管、奈米棒、或奈米針尖。舉例來說,緩衝層108的紋路表面或粗糙表面,其形成方法可為垂直成長奈米管於吸收層106的表面上。上述製程形成的結構如第3A圖所示。舉例來說,緩充層108可包含本質氧化鋅奈米管,其形成方法可為水熱反應或溶液中的化學浴沉積。上述溶液包括含鋅鹽類與鹼性化學品。含鋅鹽類可為硝酸鋅、醋酸鋅、氯化鋅、硫酸鋅、上述之組合、或上述之水合物。在一實施例中,水合物為硝酸鋅的六水合物、硝酸鋅的水合物、或醋酸鋅的水合物。溶液中的鹼性化學品可為強鹼如KOH或NaOH,或弱鹼如氨或胺。
在某些實施例中,吸收層106具有紋理表面。在某些實施例中,吸收層106與緩衝層108均具有紋理表面。光伏元件400如第4圖所示。上述紋路表面的形成方法可為蝕刻或臨場沉積具有奈米管、奈米棒、或奈米針尖等結構之適當材料。在一實施例中,緩衝層108包含CdS或ZnS且具有紋路表面,其形成方法可為有機金屬化學氣相沉積(MOCVD)。
在某些實施例中,方法200亦包含形成切割線延伸至緩衝層108與吸收層106中。在某些實施例中,可視情況進行步驟208。在步驟208中延伸至緩衝層108與吸收層106中的切割線,其合適的形成方法可為雷射切割或機械切割製程。舉例來說,第5與6圖分別顯示具有切割線P2的光伏元件500與600。
回到第2圖,步驟210沉積導電塗層110於緩衝層108上。導電塗層110具有至少一種奈米材料,其至少一尺寸介於0.5nm至1000nm之間。在步驟210後,形成部份光伏元件100之結構如第1D圖所示。在某些實施例中,導電塗層110的厚度為奈米級或微米級,比如介於0.5nm至500nm之間。
導電塗層110包含至少一種奈米材料,其至少一尺寸如粒子尺寸、直徑、或長度介於0.5nm至1000nm之間。導電塗層的奈米材料型態可為奈米管、奈米微板、奈米棒、奈米粒子、奈米片、任何其他形狀、或上述之組合。用於導電塗層110之奈米材料可為碳、石墨烯、金屬、或任何其他無機或有機的導電材料。適用於導電塗層110的材料包含但不限於碳奈米管、石墨烯微板或微片、金屬奈米管、金屬奈米棒、或金屬奈米粒子。在某些實施例中,導電塗層110中的奈米材料包含石墨烯奈米微板、碳奈米管(CNT)、或銀奈米粒子。在某些實施例中,導電塗層110中的奈米材料包含碳奈米管。適用的碳奈米管(CNT)包含但不限於單壁CNT、雙壁CNT、或多壁CNT。
導電塗層110的沉積方法可為合適製程如浸潤塗佈、旋轉塗佈、噴灑塗佈、臨場沉積導電塗層110、或任何其他合適製程。在某些實施例中,導電塗層110之形成方法為沉
積分散於溶液中的奈米材料。舉例來說,將導電塗層110沉積於緩衝層108上的步驟,係於電場中以包含碳奈米管之溶液進行。位於緩衝層108上的導電塗層,其碳奈米管具有特定方向。舉例來說,碳奈米管的方向實質上垂直於切割線。第3B圖係某些實施例中,沉積導電塗層110於緩衝層108之紋路表面上的部份光伏元件之製程上視圖。如第3B圖所示,在緩衝層108的紋路表面上可見某些部份吸收層106。
第8A至8E圖係某些實施例中,沉積導電塗層110於緩衝層108上的製程示意圖。如第8A圖所示,容器802中的溶液801可用於導電塗層110,且溶液801係含有分散的奈米材料806。如第1D圖的相關說明所述,奈米材料806的型態可為奈米管、奈米微板、奈米棒、奈米粒子、奈米片、任何其他形狀、或上述之組合。用於導電塗層110的奈米材料可為碳、石墨、金屬、或任何其他無機或有機導電材料。在某些實施例中,導電塗層110中的奈米材料806包含石墨烯奈米微板、碳奈米管(CNT)、或銀奈米粒子。在某些實施例中,奈米材料806包含碳奈米管(CNT)。合適的CNT可為單壁CNT、雙壁CNT、多壁CNT、或上述之組合。在某些實施例中,在將碳奈米管分散於溶液中之前,需先純化碳奈米管。碳奈米管可分散於包含分散劑(如界面活性劑)的水溶液中。舉例來說,可藉由界面活性劑將CNT分散於去離子水中。適用的界面活性劑包含但不限於丁氧基乙醇、四甲基-5-癸炔-4,7-二醇、或α-(壬基苯基)-ω-羥基聚(氧基-1,2-乙二基)。
如第8B圖所示,將光伏元件808浸入溶液804中,且
溶液804包含分散的奈米材料806。如第1C圖的相關說明所述,光伏元件808包含緩衝層108與吸收層106。緩衝層108或吸收層106具有紋路表面。
如第8C圖所示,光伏元件808浸入溶液804中後,分散的奈米材料806將沉積於緩衝層108的紋路表面上。如第8D圖所示,將光伏元件808垂直拉離液體。在某些實施例中,光伏元件808包含至少一切割線113如第5至6圖所示。舉例來說,延伸至吸收層106與緩衝層108的切割線,在第5至6圖中標示為P2。將光伏元件拉離液體的方向,亦垂直於至少一切割線113。
如第8E圖所示,將光伏元件808完全拉離溶液804後,分散的奈米材料806對準的方向將平行於拉離方向並垂直於切割線113。上述奈米材料806的塗層即導電塗層110。導電塗層110其奈米材料806的方向亦圖示於第3B與7圖中。
第9A至9B圖係某些實施例中,具有方向之奈米材料的導電塗層110其形成機制。第9B圖係第9A圖的部份放大圖。如第8D圖的相關說明所述,光伏元件808係垂直拉離溶液804,且溶液804含有用於導電塗層110(第9A圖)的奈米材料806。包含奈米材料806之溶液804的邊界層,係形成光伏元件808的表面上。在邊界層中,分散的奈米材料806其方向將平行於拉離方向。在某些實施例中,乾燥光伏元件808後,可形成具有特定方向的奈米材料806(如碳奈米管)之導電塗層110。
在某些實施例中,形成具有特定方向之奈米材料806的製程可輔以電場或磁場。第10圖係某些實施例中,於電場中以包含碳奈米管(CNT)之溶液沉積導電塗層110的製程示
意圖。在第10圖中,相同元件將以相同標號標示以簡化說明,而第8A至8E圖中所述的結構不再重複敘除。如第10圖所示,光伏元件808的兩端分別連接至電極810與812。經由電源814可施加電壓或電流至光伏元件808上。在某些實施例中,採用電壓介於0.1伏特至30伏特之間的交流電流(AC)。在其他實施例中,採用電壓介於0.1伏特至100伏特之間的直流電流(DC)。
以含有CNT的溶液為例,CNT與溶劑的重量比介於10-4至10-2之間。適用的CNT可為單壁CNT,其直徑介於0.8nm至2nm之間,且其長度介於5μm至30μm之間。適用的CNT可為多壁CNT,其直徑介於3nm至50nm之間,且其長度介於10μm至50μm之間。
回到第2圖,步驟212形成透明導電層112於導電塗層110上。在步驟212後,形成部份光伏元件100之結構如第1E圖所示。適用於透明導電層112的材料包含但不限於透明導電氧化物如銦錫氧化物(ITO)、掺雜氟的氧化錫(FTO)、掺雜鋁的氧化鋅(AZO)、掺雜鎵的氧化鋅(GZO)、掺雜鋁與鎵的氧化鋅(AGZO)、掺雜硼之氧化鋅(BZO)、或上述之組合。適用於透明導電層112的材料亦可為複合材料,其包含至少一透明導電氧化物(TCO)與另一導電材料,且不會明顯降低透明導電材料的導電性或透光度。在某些實施例中,透明導電層112之厚度為奈米級或微米級,比如介於0.3nm至2.5μm之間。
如前所述,本發明一實施例提供光伏元件。第1E、4、與5至6圖係某些實施例中的光伏元件。如第1E與4圖所示的某些實施例中,光伏元件100或400包含基板102、位於基板102
上的背接觸層104、位於背接觸層104上且用以吸收光子的吸收層106、位於吸收層106上的緩衝層108、位於緩衝層108上的導電塗層110、與位於導電塗層110上的透明導電層112。吸收層106與緩衝層108為半導體。導電塗層110包含至少一種奈米材料,其具有至少一尺寸介於0.5nm至1000nm之間。在某些實施例中,緩衝層108或吸收層106具有紋路表面。如第1E圖所示的某些實施例中,緩衝層108具有紋路表面。如第4圖所示,吸收層106(或緩衝層108與吸收層106)具有紋路表面。
在某些實施例中,透明導電層112包含透明導電氧化物(TCO)。在某些實施例中,導電塗層110之厚度介於0.5nm至500nm之間。在某些實施例中,導電塗層110包含石墨烯奈米微板。在某些實施例中,導電塗層110包含銀奈米粒子。在某些實施例中,導電塗層110包含碳奈米管(CNT)。
在某些實施例中,如第5至6圖所示之光伏元件500與600更包含切割線P2延伸至緩衝層108與吸收層106中。第5圖係某些實施例中,具有切割線P1、P2、與P3的光伏元件500其部份剖視圖。舉例來說,切割線P2的寬度介於1微米至100微米之間。在某些實施例中,切割線P2的寬度為40微米。吸收層106之厚度L1介於500nm至2微米之間,而緩衝層108之厚度L2介於5nm至500nm之間。位於緩衝層108上的導電塗層110之厚度L3,或在切割線P2中的導電塗層110之厚度L4或L5介於0.5nm至500nm之間,比如介於10nm至400nm之間。切割線P1穿過圖案化之背接觸層104,並填有吸收層106。
在某些實施例中,位於緩衝層108上的導電塗層110
中之奈米材料如碳奈米管,其方向實質上垂直於切割線P2(或第7圖中的切割線113)。第6圖係某些實施例中,光伏元件600的部份剖視圖,其導電塗層110中的奈米材料其方向實質上垂直於切割線P2。如第6圖所示的某些實施例中,導電塗層為不連續的塗層,其具有某些空間或多個空隙於碳奈米管之間。透明導電層112將填入碳奈米管之間的空間或多個空隙中。
本發明提供光伏元件與其形成方法。在某些實施例中,光伏元件包括基板;位於基板上的背接觸層;用以吸收光子並位於背接觸層上的吸收層;位於吸收層上的緩衝層;位於緩衝層上的導電塗層;以及位於導電塗層上的透明導電層。導電塗層包括至少一種奈米材料,其至少一尺寸介於0.5nm至1000nm之間。在某些實施例中,緩衝層或吸收層具有紋路表面。
在某些實施例中,透明導電層包括透明導電氧化物(TCO)。在某些實施例中,導電塗層之厚度介於0.5nm至500nm之間。在某些實施例中,導電塗層包括石墨烯奈米微板。在某些實施例中,導電塗層包括銀奈米粒子。在某些實施例中,導電塗層包括碳奈米管(CNT)。在某些實施例中,光伏元件更包括切割線延伸至緩衝層與吸收層中。位於緩衝層上的導電塗層中的碳奈米管其方向實質上垂直於切割線。在某些實施例中,導電塗層為不連續的塗層,其具有多個空隙於碳奈米管之間。透明導電層填入碳奈米管之間的空隙中。
在某些實施例中,光伏元件包括:基板;位於基板上的背接觸層;位於背接觸層上的吸收層;位於吸收層上的緩衝層,其中吸收層與緩衝層係半導體;位於緩衝層上的導電塗
層,其包含碳奈米管或石墨烯微板;以及位於導電塗層上的透明導電氧化物(TCO)層。在某些實施例中,導電塗層之厚度介於0.5nm至500nm之間。在某些實施例中,吸收層或緩衝層具有紋路表面。在某些實施例中,導電塗層包括碳奈米管(CNT)。在某些實施例中,光伏元件包括切割線延伸至緩衝層與吸收層中。位於緩衝層上的導電塗層中的碳奈米管其方向實質上垂直於切割線。
本發明亦提供光伏元件的製作方法,包括:形成背接觸層於基板上;形成用以吸收光子的吸收層於背接觸層上;形成緩衝層於吸收層上;沉積導電塗層於緩衝層上;以及形成透明導電層於導電塗層上。導電塗層包括至少一種奈米材料,且奈米材料具有至少一尺寸介於0.5nm至1000nm之間。在某些實施例中,緩衝層或吸收層具有紋路表面。在某些實施例中,導電塗層中的奈米材料包括石墨烯奈米微板、碳奈米管、或銀奈米粒子。在某些實施例中,形成導電塗層的步驟包括沉積奈米材料,且奈米材料係分散於溶液中。
在某些實施例中,上述方法更包括形成切割線延伸至緩衝層與吸收層中。在某些實施例中,沉積導電塗層於緩衝層上的步驟,包括於電場中以包含碳奈米管(CNT)之溶液沉積導電塗層。緩衝層上的導電塗層所含的碳奈米管,其方向實質上垂直於切割線。
雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範
圍當視後附之申請專利範圍所界定者為準。
P1、P2、P3‧‧‧切割線
104‧‧‧背接觸層
106‧‧‧吸收層
108‧‧‧緩衝層
110‧‧‧導電塗層
112‧‧‧透明導電層
600‧‧‧光伏元件
Claims (13)
- 一種光伏元件,包括:一基板;一背接觸層,位於該基板上;一吸收層,用以吸收光子並位於該背接觸層上;一緩衝層,位於該吸收層上;一導電塗層,位於該緩衝層上;以及一透明導電層,位於該導電塗層上;其中該導電塗層包括至少一種奈米材料,其至少一尺寸介於0.5nm至1000nm之間。
- 如申請專利範圍第1項所述之光伏元件,其中該緩衝層或該吸收層具有紋路表面。
- 如申請專利範圍第1項所述之光伏元件,其中該導電塗層包括石墨烯奈米微板或銀奈米粒子。
- 如申請專利範圍第1項所述之光伏元件,其中該導電塗層包括碳奈米管。
- 如申請專利範圍第4項所述之光伏元件,更包括一切割線延伸至該緩衝層與該吸收層中,其中位於該緩衝層上的該導電塗層中的碳奈米管其方向實質上垂直於該切割線。
- 如申請專利範圍第4項所述之光伏元件,其中該導電塗層為不連續的塗層,其具有多個空隙於碳奈米管之間,且該透明導電層填入碳奈米管之間的該些空隙中。
- 一種光伏元件,包括:一基板; 一背接觸層,位於該基板上;一吸收層,位於該背接觸層上;一緩衝層,位於該吸收層上,其中該吸收層與該緩衝層係半導體;一導電塗層,包含碳奈米管或石墨烯微板,且位於該緩衝層上;以及一透明導電氧化物層位於該導電塗層上。
- 如申請專利範圍第7項所述之光伏元件,其中該吸收層或該緩衝層具有紋路表面。
- 如申請專利範圍第7項所述之光伏元件,其中該導電塗層包括碳奈米管,且更包括一切割線延伸至該緩衝層與該吸收層中,其中位於該緩衝層上的該導電塗層中的碳奈米管其方向實質上垂直於該切割線。
- 一種光伏元件的製作方法,包括:形成一背接觸層於一基板上;形成用以吸收光子的一吸收層於該背接觸層上;形成一緩衝層於該吸收層上;沉積一導電塗層於該緩衝層上;以及形成一透明導電層於該導電塗層上;其中該導電塗層包括至少一種奈米材料,且該奈米材料具有至少一尺寸介於0.5nm至1000nm之間。
- 如申請專利範圍第10項所述之光伏元件的製作方法,其中該緩衝層或該吸收層具有紋路表面。
- 如申請專利範圍第10項所述之光伏元件的製作方法,其中 該導電塗層中的該奈米材料包括石墨烯奈米微板或碳奈米管。
- 如申請專利範圍第10項所述之光伏元件的製作方法,更包括形成一切割線延伸至該緩衝層與該吸收層中,其中沉積該導電塗層於該緩衝層上的步驟,包括於一電場中以包含碳奈米管之一溶液沉積該導電塗層;以及該緩衝層上的該導電塗層所含的碳奈米管,其方向實質上垂直於該切割線。
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